Long-life high-selectivity titanium nitride / tungsten etching solution
By optimizing the composition of the etching solution, the problems of low selectivity, slow speed, and short lifespan of titanium nitride and tungsten etching solutions in the existing technology have been solved, achieving etching effects with high selectivity and long lifespan, thus improving the efficiency and quality of integrated circuit manufacturing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD
- Filing Date
- 2024-11-12
- Publication Date
- 2026-06-23
AI Technical Summary
Existing titanium nitride and tungsten etchants cannot simultaneously meet the requirements of high selectivity, high speed and long life, especially in integrated circuit manufacturing, where it is difficult to achieve a titanium nitride etching rate greater than 10A/min, a selectivity greater than 500 and an etching life greater than 24h.
An etching solution composed of a specific ratio of acidic medium, dispersant, complexing agent, accelerator, and stabilizer, including 30-70% acidic medium, 10-25% dispersant, 1-10% complexing agent, 0.1-1% accelerator, 0.01-0.1% stabilizer, and the balance being deionized water, optimizes the etching environment to improve the etching rate and selectivity of titanium nitride, reduce the etching rate of tungsten, and extend the life of the etching solution.
The etching selectivity ratio of titanium nitride to tungsten was improved to 500~1000, the etching rate of titanium nitride was maintained at 10~25A/min, the stability and lifespan of the etching solution were significantly improved, and the etching process was more efficient and consistent.
Smart Images
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