A programmable power supply circuit based on gallium nitride technology and its control method

Abstract

This application relates to the field of electricity meter measurement and testing technology, and discloses a programmable power supply circuit and its control method based on gallium nitride technology. The circuit includes a sine wave generator circuit, a first driving circuit, a second driving circuit, and a transformer. The first driving circuit drives, boosts, and accelerates a first pulse modulation signal, and then controls the on / off state of a first switching transistor in the first driving circuit. The first driving circuit also drives and accelerates a second pulse modulation signal, and then controls the on / off state of a second switching transistor in the first driving circuit. The second driving circuit drives and accelerates the first pulse modulation signal, and then controls the on / off state of a third switching transistor in the second driving circuit. The second driving circuit also drives, boosts, and accelerates the second pulse modulation signal, and then controls the on / off state of a fourth switching transistor in the second driving circuit. The circuit provided by this application can significantly reduce the heat generation of the entire device and reduce the circuit size.

Description

Technical Field

[0001] This disclosure relates to the field of electricity meter measurement and testing technology, and more specifically, to a programmable power supply circuit based on gallium nitride technology and its control method. Background Technology

[0002] With the rapid development of the power industry and the advancement of smart grid construction, the workload of metering verification for smart meters has increased exponentially. Most meter verification devices use the "virtual load standard meter method" to test the energy error of the meter under test.

[0003] However, current electricity meter testing devices with fewer meter positions increase the number of testing rounds and testing time, resulting in low testing efficiency. Meanwhile, ordinary high-power programmable power supplies, due to requirements for heat dissipation and inductance, are generally large in size and weight, generating significant heat, which is detrimental to low-carbon and environmentally friendly practices.

[0004] Therefore, in order to improve the efficiency of the verification work, a programmable power supply circuit is needed that can better solve the problems of power, size and heat generation. Summary of the Invention

[0005] In view of the above situation, this application provides a programmable power supply circuit and its control method based on gallium nitride technology, which aims to solve the above problems or at least partially solve the above problems.

[0006] In a first aspect, embodiments of this application provide a programmable power supply circuit based on gallium nitride technology. The circuit includes: a sine wave generating circuit, a first driving circuit, a second driving circuit, and a transformer. The first driving circuit and the second driving circuit are respectively connected to the sine wave generating circuit, and the first driving circuit and the second driving circuit are respectively connected to the transformer. The sine wave generating circuit outputs a first pulse modulation signal and a second pulse modulation signal, which have the same amplitude and frequency but opposite phases. The first driving circuit drives, boosts, and accelerates the first pulse modulation signal, and then controls a first switching circuit in the first driving circuit. The first driving circuit is further used to control the on / off state of the second switching transistor after driving and accelerating the second pulse modulation signal; the second driving circuit is used to control the on / off state of the third switching transistor after driving and accelerating the first pulse modulation signal; the second driving circuit is further used to control the on / off state of the fourth switching transistor after driving, boosting and accelerating the second pulse modulation signal; the transformer is used to adjust the voltage output by the first driving circuit and the voltage output by the second driving circuit; the first switching transistor, the second switching transistor, the third switching transistor and the fourth switching transistor are gallium nitride switching transistors.

[0007] Secondly, embodiments of this application provide a control method for a programmable power supply circuit based on gallium nitride (GaN) technology, comprising: controlling a sine wave generator circuit to output a first pulse modulation signal and a second pulse modulation signal, wherein the first pulse modulation signal and the second pulse modulation signal have the same amplitude and frequency but opposite phase; controlling a first driving circuit to drive, boost, and accelerate the first pulse modulation signal, and then controlling the switching on and off of a first switch in the first driving circuit; controlling the first driving circuit to drive and accelerate the second pulse modulation signal, and then controlling the switching on and off of a second switch in the first driving circuit; controlling the second driving circuit to drive and accelerate the first pulse modulation signal, and then controlling the switching on and off of a third switch in the second driving circuit; controlling the second driving circuit to drive, boost, and accelerate the second pulse modulation signal, and then controlling the switching on and off of a fourth switch in the second driving circuit; wherein the first switch, the second switch, the third switch, and the fourth switch are gallium nitride (GaN) switches.

[0008] The programmable power supply circuit based on gallium nitride (GaN) technology provided in this application simultaneously inputs a first pulse modulation signal and a second pulse modulation signal to a first drive circuit and a second drive circuit. After being driven by a driver chip, the four switching transistors in the drive circuit are alternately turned on, resulting in high efficiency, significantly reducing the overall heat generation and circuit size. Simultaneously, the driver chip features high output power, high conversion efficiency, and strong versatility, further reducing switching time and switching losses. Furthermore, the use of gallium nitride (GaN) switching transistors in this application leads to higher switching frequency and lower power loss, contributing to a reduction in the weight and size of the entire programmable power supply circuit. Attached Figure Description

[0009] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0010] Figure 1 A schematic diagram of a programmable power supply circuit based on gallium nitride technology provided in an embodiment of this application is shown.

[0011] Figure 2 A schematic diagram of a programmable power supply circuit based on gallium nitride technology according to another embodiment of this application is shown;

[0012] Figure 3 A circuit structure diagram of a programmable power supply circuit based on gallium nitride technology provided in another embodiment of this application is shown;

[0013] Figure 4A flowchart illustrating the control method of a programmable power supply circuit based on gallium nitride technology provided in an embodiment of this application is shown. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0015] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such use can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the term "comprising" and its variations should be interpreted as open-ended terms meaning "including but not limited to."

[0016] Before providing a detailed description of the embodiments of this application, the following technical terms will be introduced.

[0017] Bootstrap voltage boost circuit: also called bootstrap circuit or boost circuit, it uses electronic components such as bootstrap diodes and bootstrap capacitors to make the capacitor discharge voltage and the power supply voltage superimposed, thereby increasing the voltage. Some circuits can increase the voltage by several times the power supply voltage.

[0018] As described in the background section, most electricity meter calibration devices use the "virtual load standard meter method" to test the energy error of the meter under test. That is, the test power supply outputs voltage and current test signals, which are sent to both the meter under test and the standard meter; a sampler collects the energy pulses from the meter under test, calculates the corresponding energy value, compares it with the energy value simultaneously measured by the standard meter, and calculates the corresponding error. Current electricity meter calibration devices with fewer meter positions increase the number of calibration rounds, increase calibration time, and reduce calibration efficiency. Furthermore, ordinary high-power programmable power supplies, due to heat dissipation and inductance requirements, are generally large in size and weight, generate a lot of heat, and are not conducive to low-carbon and environmentally friendly practices.

[0019] Therefore, in order to improve the efficiency of the verification work, a programmable power supply circuit based on gallium nitride technology is needed, which can better solve the problems of power, size and heat generation.

[0020] Based on this, this application provides a programmable power supply circuit based on gallium nitride (GaN) technology. By simultaneously inputting a first pulse modulation signal and a second pulse modulation signal to a first drive circuit and a second drive circuit, respectively, and driving them via a driver chip, four switching transistors in the drive circuit are controlled to conduct alternately. Due to the high efficiency of the switching transistors, the heat generated by the entire device is significantly reduced, and the circuit size is also reduced. Simultaneously, the driver chip features high output power, high conversion efficiency, and strong versatility, further reducing switching time and switching losses. Furthermore, the use of gallium nitride (GaN) switching transistors in this application results in a higher switching frequency and lower power loss, contributing to a reduction in the weight and size of the entire programmable power supply circuit.

[0021] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0022] Figure 1 A schematic diagram of a programmable power supply circuit based on gallium nitride technology according to an embodiment of this application is shown. Figure 1 As shown, the programmable power supply circuit includes a sine wave generator circuit, a first drive circuit, a second drive circuit, and a transformer.

[0023] In some embodiments, the first driving circuit and the second driving circuit are respectively connected to a sine wave generating circuit, and the first driving circuit and the second driving circuit are respectively connected to a transformer.

[0024] In one embodiment, the first driving circuit and the second driving circuit are respectively connected to the high-potential input terminal and the low-potential input terminal on one side of the transformer.

[0025] In some embodiments, the sine wave generating circuit outputs two pulse modulation signals, namely a first pulse modulation signal and a second pulse modulation signal, which are pulse modulation signals with the same amplitude and frequency but opposite phases. In one embodiment, the sine wave generating circuit adopts a sinusoidal pulse width modulation control method, adjusting the output voltage by adjusting the pulse width. Within one sine cycle, the pulse width changes according to a sinusoidal law (pulse width modulation).

[0026] In some embodiments, the first driving circuit is used to drive, boost, and accelerate the first pulse modulation signal, and then control the on / off state of the first switching transistor in the first driving circuit.

[0027] Furthermore, the first driving circuit is also used to drive and accelerate the second pulse modulation signal, and then control the on / off state of the second switching transistor in the first driving circuit.

[0028] In some embodiments, the second driving circuit is used to drive and accelerate the first pulse modulation signal, and then control the on / off state of the third switching transistor in the second driving circuit.

[0029] Furthermore, the second driving circuit is also used to drive, boost, and accelerate the second pulse modulation signal, and then control the on / off state of the fourth switch in the second driving circuit.

[0030] In some embodiments, the transformer is used to adjust the voltage output by the first drive circuit and the voltage output by the second drive circuit to meet various user needs.

[0031] In this embodiment, the first pulse modulation signal controls the on / off state of the first switch in the first driving circuit, and the first pulse modulation signal controls the on / off state of the third switch in the second driving circuit; the second pulse modulation signal controls the on / off state of the second switch in the first driving circuit, and the second pulse modulation signal controls the on / off state of the fourth switch in the second driving circuit, thereby enabling the switching transistors of the first driving circuit and the second driving circuit in the programmable power supply circuit to conduct alternately.

[0032] In the programmable power supply circuit based on gallium nitride technology provided in this application, the first driving circuit and the second driving circuit have the same structure.

[0033] In some embodiments, the first driving circuit includes a first driving chip, a first bootstrap boost circuit, a first acceleration circuit, a second acceleration circuit, a first switching transistor, and a second switching transistor.

[0034] Specifically, the input terminal of the first driver chip is connected to the sine wave generating circuit to receive and drive the first pulse modulation signal and the second pulse modulation signal.

[0035] The first output terminal of the first driver chip is sequentially connected to the first bootstrap boost circuit, the first acceleration circuit, and the first switching transistor. The first bootstrap boost circuit is used to increase the voltage of the first pulse modulation signal, and the first acceleration circuit is used to accelerate the turn-off speed of the first switching transistor.

[0036] The second output terminal of the first driver chip is sequentially connected to the second acceleration circuit and the second switching transistor. The second acceleration circuit is used to speed up the turn-off speed of the second switching transistor.

[0037] The output terminals of the first and second switching transistors are respectively connected to the input terminal of the transformer. The first and second switching transistors are used to output a first square wave signal to the transformer.

[0038] In some embodiments, the second driving circuit includes a second driving chip, a second bootstrap boost circuit, a third acceleration circuit, a fourth acceleration circuit, a third switching transistor, and a fourth switching transistor.

[0039] Specifically, the input terminal of the second driver chip is connected to the sine wave generating circuit to receive and drive the first pulse modulation signal and the second pulse modulation signal.

[0040] The first output terminal of the second driver chip is sequentially connected to the second bootstrap boost circuit, the third acceleration circuit, and the third switching transistor. The second bootstrap boost circuit is used to increase the voltage of the second pulse modulation signal, and the third acceleration circuit is used to accelerate the turn-off speed of the third switching transistor.

[0041] The second output terminal of the second driver chip is connected in sequence to the fourth acceleration circuit and the fourth switching transistor. The fourth acceleration circuit is used to speed up the turn-off speed of the fourth switching transistor.

[0042] The output terminals of the third and fourth switching transistors are connected to the input terminals of the transformer, respectively. The third and fourth switching transistors are used to output a second square wave signal to the transformer.

[0043] Specifically, such as Figure 2 As shown, the first pulse modulation signal is driven by the first driver chip in the first driving circuit, and then passes through the first bootstrap boost circuit and the first acceleration circuit in sequence, finally controlling the on / off state of the first switch transistor; the second pulse modulation signal is driven by the first driver chip in the first driving circuit, and then passes through the second acceleration circuit to control the on / off state of the second switch transistor.

[0044] The first pulse modulation signal, after being driven by the second driver chip in the second driving circuit, passes through the fourth acceleration circuit and controls the on / off state of the fourth switch. The second pulse modulation signal, after being driven by the second driver chip in the second driving circuit, passes through the second bootstrap boost circuit and the third acceleration circuit in sequence and controls the on / off state of the third switch.

[0045] In this embodiment, the first pulse modulation signal controls the on / off state of the upper switch in the first driving circuit, and the first pulse modulation signal controls the on / off state of the lower switch in the second driving circuit; the second pulse modulation signal controls the on / off state of the lower switch in the first driving circuit, and the second pulse modulation signal controls the on / off state of the upper switch in the second driving circuit, thereby enabling the upper and lower switches of the first and second driving circuits in the programmable power supply circuit to conduct alternately.

[0046] In other embodiments of this application, the driver chip is a monolithic integrated driver chip, such as an IR series chip. Optionally, the pulse modulation signal is driven by the driver chip to output a square wave signal. Optionally, the driver chip may include a strobe pin SD, where a high level of SD disables square wave output, and a low level of SD enables square wave output.

[0047] The following is combined with Figure 3 The specific circuit structure of the first driving circuit is described.

[0048] In some embodiments, the first bootstrap boost circuit includes a first ultrafast recovery diode D2, a first bootstrap capacitor C3, and a second bootstrap capacitor C4;

[0049] The positive terminal of the first ultrafast recovery diode D2 is connected to the power supply VCC terminal of the first driver chip, and the negative terminal of the first ultrafast recovery diode D2 is connected to the first power supply VB terminal of the first driver chip; the first terminal of the first bootstrap capacitor C3 and the first terminal of the second bootstrap capacitor C4 are respectively connected to the first power supply VS terminal of the first driver chip, and the second terminal of the first bootstrap capacitor C3 and the second terminal of the second bootstrap capacitor C4 are respectively connected to the second power supply VB terminal of the first driver chip.

[0050] In some embodiments, the first acceleration circuit includes a first resistor R1, a second resistor R2, and a first diode D1; wherein, the first end of the first resistor R1 is connected to the first driving HO terminal of the first driving chip and the first end of the second resistor R2, the second end of the first resistor R1 is connected to the negative terminal of the first diode D1, the positive terminal of the first diode D1 is connected to the gate of the first switching transistor A1 through the first ferrite bead L1, and the positive terminal of the first diode D1 is also connected to the second end of the second resistor R2.

[0051] In some embodiments, the second acceleration circuit includes a third resistor R6, a fourth resistor R8, and a second diode D3; wherein, the first end of the third resistor R6 is connected to the second drive LO terminal of the first drive chip and the first end of the fourth resistor R8, the second end of the third resistor R6 is connected to the negative terminal of the second diode D3, the positive terminal of the second diode D3 is connected to the gate of the second switch A2 through the second ferrite bead L2, and the second diode D3 is also connected to the second end of the fourth resistor R8.

[0052] In some embodiments, the first drive circuit further includes a first clamping resistor R5 and a second clamping resistor R10.

[0053] The first clamping resistor R5 is connected to the first power supply VS terminal of the first driver chip, and the second terminal of the first clamping resistor R5 is connected to the first drive HO terminal of the first driver chip and the input terminal of the first acceleration circuit, respectively. The first terminal of the second clamping resistor R10 is connected to the digital circuit power supply VSS terminal of the first driver chip, and the second terminal of the second clamping resistor R10 is connected to the second drive LO terminal of the first driver chip and the input terminal of the second acceleration circuit, respectively.

[0054] In some embodiments, the first driving circuit further includes a first magnetic bead L1 and a second magnetic bead L2.

[0055] The first magnetic bead L1 is used to suppress high-frequency interference generated by the first pulse modulation signal, and the second magnetic bead L2 is used to suppress high-frequency interference generated by the second pulse modulation signal.

[0056] Specifically, the first end of the first magnetic bead L1 is connected to the output terminal of the first acceleration circuit, the second end of the first magnetic bead L1 is connected to the gate of the first switching transistor A1, the drain of the first switching transistor A1 is connected to the power supply, and the source of the first switching transistor A1 is connected to the drain of the second switching transistor A2; the first end of the second magnetic bead L2 is connected to the output terminal of the second acceleration circuit, the second end of the second magnetic bead L2 is connected to the gate of the second switching transistor A2, and the source of the second switching transistor A2 is grounded.

[0057] In some embodiments, the first driving circuit further includes a first buffer circuit, which is used to absorb the spike voltage generated by the first switch A1 and the second switch A2.

[0058] Furthermore, the first buffer circuit includes a ninth resistor R3, a tenth resistor R4, an eleventh resistor R7, a first capacitor C5, a second capacitor C6, and a third capacitor C9.

[0059] Specifically, the first terminal of the first capacitor C5 is connected to the first power supply VS terminal of the first driver chip and the first terminal of the eleventh resistor R7. The second terminal of the first capacitor C5 is connected to the first terminal of the ninth resistor R3. The second terminal of the ninth resistor R3 is connected to the first terminal of the tenth resistor R4 and ground. The second terminal of the tenth resistor R4 is connected to the first terminal of the second capacitor C6. The second terminal of the second capacitor C6 is connected to the digital circuit power supply VSS terminal of the first driver chip. The first terminal of the third capacitor C9 is connected to the second terminal of the eleventh resistor R7. The second terminal of the third capacitor C9 is connected to the digital circuit power supply VSS terminal of the first driver chip.

[0060] In some embodiments, the first driving circuit further includes a first energy storage capacitor C7 and a second energy storage capacitor C8, which can simultaneously drive the first switching transistor A1 and the second switching transistor A2, resulting in a simple structure and low cost.

[0061] In this embodiment, after the first pulse modulation signal is driven by the first driver chip, the voltage of the first pulse modulation signal is increased by the first bootstrap boost circuit, and then flows through the first acceleration circuit and the first ferrite bead, finally controlling the on / off state of the first switch; after the second pulse modulation signal is driven by the first driver chip, it flows through the second acceleration circuit and the second ferrite bead in sequence, finally controlling the on / off state of the second switch.

[0062] The following is combined with Figure 3 The specific circuit structure of the second driving circuit is described.

[0063] In some embodiments, the second bootstrap boost circuit of the second driving circuit includes a second ultrafast recovery diode D6, a third bootstrap capacitor C10, and a fourth bootstrap capacitor C11.

[0064] The positive terminal of the second ultrafast recovery diode D6 is connected to the power supply terminal of the second driver chip, and the negative terminal of the second ultrafast recovery diode D6 is connected to the first power supply VB terminal of the second driver chip; the first terminal of the third bootstrap capacitor C10 and the first terminal of the fourth bootstrap capacitor C11 are respectively connected to the first power supply VS terminal of the second driver chip, and the second terminal of the third bootstrap capacitor C10 and the second terminal of the fourth bootstrap capacitor C11 are respectively connected to the second power supply VB terminal of the second driver chip.

[0065] In some embodiments, the third acceleration circuit includes a fifth resistor R12, a sixth resistor R13, and a third diode D5.

[0066] Among them, the first end of the fifth resistor R12 is connected to the first driving HO terminal of the second driving chip and the first end of the sixth resistor R13 respectively. The second end of the fifth resistor R12 is connected to the negative terminal of the third diode D5. The positive terminal of the third diode D5 is connected to the gate of the third switch A3 through the third magnetic bead L3. The positive terminal of the third diode D5 is also connected to the second end of the sixth resistor R13.

[0067] In some embodiments, the fourth acceleration circuit includes a seventh resistor R17, an eighth resistor R19, and a fourth diode D7; wherein, the first end of the seventh resistor R17 is connected to the second drive LO terminal of the second drive chip and the first end of the eighth resistor R19, the second end of the seventh resistor R17 is connected to the negative terminal of the fourth diode D7, the positive terminal of the fourth diode D7 is connected to the gate of the fourth switch A4 through the fourth ferrite bead L4, and the fourth diode D7 is also connected to the second end of the eighth resistor R19.

[0068] In some embodiments, the second drive circuit further includes a third clamping resistor R16 and a fourth clamping resistor R21.

[0069] The first end of the third clamping resistor R16 is connected to the first power supply VS terminal of the second driver chip, and the second end of the third clamping resistor R16 is connected to the first drive HO terminal of the second driver chip and the input terminal of the third acceleration circuit, respectively; the first end of the fourth clamping resistor R21 is connected to the digital circuit power supply VSS terminal of the second driver chip, and the second end of the fourth clamping resistor R21 is connected to the second drive LO terminal of the second driver chip and the input terminal of the fourth acceleration circuit.

[0070] In some embodiments, the second driving circuit further includes a third magnetic bead L3 and a fourth magnetic bead L4.

[0071] Among them, the third magnetic bead L3 is used to suppress high-frequency interference generated by the second pulse modulation signal, and the fourth magnetic bead L4 is used to suppress high-frequency interference generated by the first pulse modulation signal.

[0072] Specifically, the first end of the third ferrite bead L3 is connected to the output of the third acceleration circuit, the second end of the third ferrite bead L3 is connected to the gate of the third switch A3, the drain of the third switch A3 is connected to the power supply, and the source of the third switch A3 is connected to the drain of the fourth switch A4; the first end of the fourth ferrite bead L4 is connected to the output of the fourth acceleration circuit, the second end of the fourth ferrite bead L4 is connected to the gate of the fourth switch A4, and the source of the fourth switch A4 is grounded.

[0073] In some embodiments, the second driving circuit further includes a second buffer circuit, which is used to absorb the spike voltage generated by the third and fourth switching transistors.

[0074] Specifically, the second buffer circuit includes a twelfth resistor R14, a thirteenth resistor R15, a fourteenth resistor R18, a fourth capacitor C12, a fifth capacitor C15, and a sixth capacitor C16.

[0075] Specifically, the first end of the fourth capacitor C12 is connected to the first power supply VS terminal of the second driver chip and the first end of the eighth resistor, the second end of the fourth capacitor C12 is connected to the first end of the twelfth resistor R14, the second end of the twelfth resistor R14 is connected to the first end of the thirteenth resistor R15 and ground, the second end of the thirteenth resistor R15 is connected to the first end of the fifth capacitor C15, the second end of the fifth capacitor C15 is connected to the digital circuit power supply VSS terminal of the first driver chip, the first end of the sixth capacitor C16 is connected to the second end of the fourteenth resistor R18, and the second end of the sixth capacitor C16 is connected to the digital circuit power supply VSS terminal of the first driver chip.

[0076] In some embodiments, the second driving circuit further includes a third energy storage capacitor C13 and a fourth energy storage capacitor C14, which can simultaneously drive the third switching transistor A3 and the fourth switching transistor A4, resulting in a simple structure and low cost.

[0077] In this embodiment, the first pulse modulation signal is driven by the second driver chip, flows sequentially through the fourth acceleration circuit and the fourth ferrite bead, and finally controls the on / off state of the fourth switch; the second pulse modulation signal is driven by the second driver chip, the voltage of the second pulse modulation signal is increased by the second bootstrap boost circuit, flows sequentially through the third acceleration circuit and the third ferrite bead, and finally controls the on / off state of the third switch.

[0078] In other embodiments of this application, the programmable power supply circuit further includes an alarm detection circuit. The alarm detection circuit is used to send an alarm signal to the driver chip when the current in the switching transistor is greater than a threshold, so that the driver chip turns off the switching transistor and protects the switching transistor from damage due to overcurrent.

[0079] Specifically, the alarm detection circuit is connected to the digital circuit power supply terminal of the first drive circuit and the digital circuit power supply terminal of the second drive circuit, respectively.

[0080] More specifically, the alarm detection circuit includes a seventh capacitor C19, an eighth capacitor C20, a fifteenth resistor R24, and a sixteenth resistor R25, which are connected in parallel.

[0081] Optionally, R24 and R25 are high-power non-inductive resistors.

[0082] Based on the above embodiments, the programmable power supply circuit will be described in detail below, taking the flow of the pulse modulation signal as the reference.

[0083] The sine wave generator circuit P1 outputs a first pulse modulation signal PW1 and a second pulse modulation signal PW2, which are simultaneously input to driver chips U1 and U2. Specifically, PW1 is input to the high end of U1, and PW2 is input to the low end of U1; conversely, PW1 is input to the low end of U2, and PW2 is input to the high end of U2. After being driven by U1, PW1 passes sequentially through a bootstrap boost circuit composed of C3, C4, and D2, a gate pull-down clamping resistor R5, a switch turn-off circuit composed of R1, D1, and R6, and a ferrite bead L1, finally being input to switch A1. Similarly, after being driven by U1, PW2 passes sequentially through a gate pull-down clamping resistor R10, a switch turn-off circuit composed of R6, D3, and R8, and a ferrite bead L2, finally being input to switch A2. A high-frequency square wave containing a sine wave is formed at the midpoint of the half-bridge arm composed of A1 and A2. After filtering, a sine wave proportional to the input signal is generated at both ends of the transformer and output to the subsequent stage. After being driven by U2, PW1 passes sequentially through the gate pull-down clamping resistor R21, the switch turn-off circuit composed of R17, D7, and R19, and the ferrite bead L4, finally being input to the switch A4. Similarly, after being driven by U2, PW2 passes sequentially through the bootstrap boost circuit composed of C10, C11, and D6, the gate pull-down clamping resistor R16, the switch turn-off circuit composed of R12, D5, and R13, and the ferrite bead L3, finally being input to the switch A3. A high-frequency square wave with sinusoidal content is generated at the midpoint of the half-bridge arm composed of A3 and A4. After filtering, a sinusoidal output proportional to the input signal is generated at both ends of the transformer and output to the subsequent stage.

[0084] In some embodiments, C7, C8, C13, and C14 are energy storage capacitors that can simultaneously drive high-side and low-side switching transistors.

[0085] In some embodiments, D2, D6, D4, and D8 are ultra-fast recovery diodes, which can clamp the negative voltage generated on VS at the moment the switch is turned off, protecting the driver chip from damage.

[0086] In some embodiments, R3, C5, R7, C9, R14, C12, R18, C16, R4, C6, R15, and C15 form a buffer circuit. Since the switching transistor operates in a hard-switching state, the RC buffer circuit can absorb the peak voltage of the switching transistor and protect it.

[0087] In some embodiments, resistors R24 and R25 are current sensing resistors. When the current in the switching transistor exceeds a set threshold, an alarm signal is quickly transmitted to the driver chip, and the driver chip turns off the switching transistor to protect it from damage due to overcurrent.

[0088] In some embodiments, gallium nitride (GaN) switching transistors are used, which can result in higher switching frequencies and lower power losses, helping to reduce the weight and size of the entire programmable power supply circuit.

[0089] In some embodiments, the programmable power supply circuit uses direct rectification of mains power, with an operating voltage of around 300V, which can eliminate the need for a traditional power frequency transformer, reduce the size of the input stage, and improve conversion efficiency.

[0090] In this embodiment of the application, by using a driver chip to drive the pulse modulation signal, the waveform distortion before and after driving is less than 0.5%, the stability of the output amplitude is less than 0.05%, the stability of the output phase is less than 0.5 degrees, the output nonlinearity is less than 0.5%, and the output efficiency is greater than 85%.

[0091] Figure 4 The diagram shows a flowchart of a control method for a programmable power supply circuit based on gallium nitride technology according to an embodiment of this application, including steps S101-S105:

[0092] Step S101: Control the sine wave generating circuit to output the first pulse modulation signal and the second pulse modulation signal.

[0093] The first pulse modulation signal and the second pulse modulation signal have the same amplitude and frequency but opposite phases.

[0094] Step S102: After controlling the first driving circuit to drive, boost, and accelerate the first pulse modulation signal, control the on / off state of the first switching transistor in the first driving circuit.

[0095] Step S103: After controlling the first driving circuit to drive and accelerate the second pulse modulation signal, control the on / off state of the second switching transistor in the first driving circuit.

[0096] Step S104: After controlling the second driving circuit to drive and accelerate the first pulse modulation signal, control the on / off state of the third switch in the second driving circuit.

[0097] Step S105: After controlling the second driving circuit to drive, boost and accelerate the second pulse modulation signal, control the on / off state of the fourth switch in the second driving circuit.

[0098] In some embodiments, the switching transistor is a gallium nitride (GaN) switching transistor.

[0099] In this embodiment, by simultaneously inputting the first pulse modulation signal and the second pulse modulation signal to the first and second driving circuits, and driving them with the driving chip to control the four switching transistors in the driving circuit to conduct alternately, high efficiency is achieved, significantly reducing the heat generated by the entire device, which is beneficial for increasing power density and reducing size. Simultaneously, the driving chip features high output power, high conversion efficiency, and strong versatility, further reducing switching time and switching losses. Furthermore, the switching transistors used in this application are gallium nitride (GaN) transistors, which can bring higher switching frequency and lower power loss, helping to reduce the weight and size of the entire programmable power supply circuit.

[0100] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0101] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0102] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A programmable power supply circuit based on gallium nitride technology, characterized in that, The circuit includes: a sine wave generating circuit, a first driving circuit, a second driving circuit, a transformer, and an alarm detection circuit; The first driving circuit and the second driving circuit are respectively connected to the sine wave generating circuit, and the first driving circuit and the second driving circuit are respectively connected to the transformer; the alarm detection circuit is respectively connected to the first driving circuit and the second driving circuit. The sine wave generating circuit is used to output a first pulse modulation signal and a second pulse modulation signal, wherein the first pulse modulation signal and the second pulse modulation signal have the same amplitude and frequency but opposite phase. The first driving circuit is used to drive, boost, and accelerate the first pulse modulation signal, and then control the on / off state of the first switching transistor in the first driving circuit; the first driving circuit is also used to drive and accelerate the second pulse modulation signal, and then control the on / off state of the second switching transistor in the first driving circuit. The second driving circuit is used to drive and accelerate the first pulse modulation signal, and then control the on / off state of the third switch in the second driving circuit; the second driving circuit is also used to drive, boost and accelerate the second pulse modulation signal, and then control the on / off state of the fourth switch in the second driving circuit. The transformer is used to adjust the voltage output by the first drive circuit and the voltage output by the second drive circuit. The alarm detection circuit is used to send an alarm signal to the first drive circuit when the current in the first switch and / or the second switch exceeds a threshold; the alarm detection circuit is also used to send an alarm signal to the second drive circuit when the current in the third switch and / or the fourth switch exceeds a threshold. The first, second, third, and fourth switching transistors are gallium nitride switching transistors.

2. The programmable power supply circuit based on gallium nitride technology according to claim 1, characterized in that, The first driving circuit includes a first driving chip, a first bootstrap boost circuit, a first acceleration circuit, a second acceleration circuit, a first switching transistor, and a second switching transistor; The input terminal of the first driver chip is connected to the sine wave generating circuit, and is used to receive and drive the first pulse modulation signal and the second pulse modulation signal; The first output terminal of the first driver chip is sequentially connected to the first bootstrap boost circuit, the first acceleration circuit and the first switching transistor. The first bootstrap boost circuit is used to increase the voltage of the first pulse modulation signal, and the first acceleration circuit is used to speed up the turn-off speed of the first switching transistor. The second output terminal of the first driver chip is connected in sequence to the second acceleration circuit and the second switching transistor. The second acceleration circuit is used to speed up the turn-off speed of the second switching transistor. The output terminals of the first switch and the second switch are respectively connected to the input terminal of the transformer, and the first switch and the second switch are used to output a first square wave signal to the transformer; The second driving circuit includes a second driving chip, a second bootstrap boost circuit, a third acceleration circuit, a fourth acceleration circuit, a fourth switching transistor, and a fifth switching transistor; The input terminal of the second driving chip is connected to the sine wave generating circuit, and is used to receive and drive the first pulse modulation signal and the second pulse modulation signal; The first output terminal of the second driver chip is sequentially connected to the second bootstrap boost circuit, the third acceleration circuit, and the third switching transistor. The second bootstrap boost circuit is used to increase the voltage of the second pulse modulation signal, and the third acceleration circuit is used to accelerate the turn-off speed of the third switching transistor. The second output terminal of the second driver chip is sequentially connected to the fourth acceleration circuit and the fourth switching transistor. The fourth acceleration circuit is used to speed up the turn-off speed of the fourth switching transistor. The output terminals of the third and fourth switching transistors are respectively connected to the input terminals of the transformer, and the third and fourth switching transistors are used to output a second square wave signal to the transformer.

3. The programmable power supply circuit based on gallium nitride technology according to claim 2, characterized in that, The first bootstrap boost circuit includes a first ultrafast recovery diode, a first bootstrap capacitor, and a second bootstrap capacitor; Wherein, the positive terminal of the first ultrafast recovery diode is connected to the power supply terminal of the first driver chip, and the negative terminal of the first ultrafast recovery diode is connected to the first power supply terminal of the first driver chip; the first terminal of the first bootstrap capacitor and the first terminal of the second bootstrap capacitor are respectively connected to the first power supply terminal of the first driver chip, and the second terminal of the first bootstrap capacitor and the second terminal of the second bootstrap capacitor are respectively connected to the second power supply terminal of the first driver chip. The second bootstrap boost circuit includes a second ultrafast recovery diode, a third bootstrap capacitor, and a fourth bootstrap capacitor; The positive terminal of the second ultrafast recovery diode is connected to the power supply terminal of the second driver chip, and the negative terminal of the second ultrafast recovery diode is connected to the first power supply terminal of the second driver chip; the first terminal of the third bootstrap capacitor and the first terminal of the fourth bootstrap capacitor are respectively connected to the first power supply terminal of the second driver chip, and the second terminal of the third bootstrap capacitor and the second terminal of the fourth bootstrap capacitor are respectively connected to the second power supply terminal of the second driver chip.

4. The programmable power supply circuit based on gallium nitride technology according to claim 2, characterized in that, The first acceleration circuit includes a first resistor, a second resistor, and a first diode; wherein, the first end of the first resistor is connected to the first driving terminal of the first driving chip and the first end of the second resistor, the second end of the first resistor is connected to the negative terminal of the first diode, and the positive terminal of the first diode is connected to the gate of the first switching transistor and the second end of the second resistor. The second acceleration circuit includes a third resistor, a fourth resistor, and a second diode; wherein, the first end of the third resistor is connected to the second driving terminal of the first driving chip and the first end of the fourth resistor, the second end of the third resistor is connected to the negative terminal of the second diode, and the positive terminal of the second diode is connected to the gate of the second switching transistor and the second end of the fourth resistor. The third acceleration circuit includes a fifth resistor, a sixth resistor, and a third diode; wherein, the first end of the fifth resistor is connected to the first driving terminal of the second driving chip and the first end of the sixth resistor, the second end of the fifth resistor is connected to the negative terminal of the third diode, and the positive terminal of the third diode is connected to the gate of the third switching transistor and the second end of the sixth resistor. The fourth acceleration circuit includes a seventh resistor, an eighth resistor, and a fourth diode; wherein, the first end of the seventh resistor is connected to the second driving terminal of the second driving chip and the first end of the eighth resistor, the second end of the seventh resistor is connected to the negative terminal of the fourth diode, and the positive terminal of the fourth diode is connected to the gate of the fourth switching transistor and the second end of the eighth resistor.

5. The programmable power supply circuit based on gallium nitride technology according to any one of claims 2 to 4, characterized in that, The first driving circuit also includes a first clamping resistor and a second clamping resistor; Wherein, the first end of the first clamping resistor is connected to the first power supply terminal of the first driver chip, and the second end of the first clamping resistor is connected to the first driving terminal of the first driver chip and the input terminal of the first acceleration circuit respectively; the first end of the second clamping resistor is connected to the digital circuit power supply terminal of the first driver chip, and the second end of the second clamping resistor is connected to the second driving terminal of the first driver chip and the input terminal of the second acceleration circuit respectively. The second driving circuit also includes a third clamping resistor and a fourth clamping resistor; The first end of the third clamping resistor is connected to the first power supply terminal of the second driver chip, and the second end of the third clamping resistor is connected to the first driving terminal of the second driver chip and the input terminal of the third acceleration circuit, respectively; the first end of the fourth clamping resistor is connected to the digital circuit power supply terminal of the second driver chip, and the second end of the fourth clamping resistor is connected to the second driving terminal of the second driver chip and the input terminal of the fourth acceleration circuit, respectively.

6. The programmable power supply circuit based on gallium nitride technology according to any one of claims 2 to 4, characterized in that, The first driving circuit further includes a first magnetic bead and a second magnetic bead, wherein the first magnetic bead is used to suppress high-frequency interference generated by the first pulse modulation signal, and the second magnetic bead is used to suppress high-frequency interference generated by the second pulse modulation signal. Wherein, the first end of the first magnetic bead is connected to the output terminal of the first acceleration circuit, the second end of the first magnetic bead is connected to the gate of the first switching transistor, the drain of the first switching transistor is connected to the power supply, and the source of the first switching transistor is connected to the drain of the second switching transistor; the first end of the second magnetic bead is connected to the output terminal of the second acceleration circuit, the second end of the second magnetic bead is connected to the gate of the second switching transistor, and the source of the second switching transistor is grounded. The second driving circuit further includes a third ferrite bead and a fourth ferrite bead. The third ferrite bead is used to suppress high-frequency interference generated by the second pulse modulation signal, and the fourth ferrite bead is used to suppress high-frequency interference generated by the first pulse modulation signal. The third magnetic bead has its first end connected to the output of the third acceleration circuit, its second end connected to the gate of the third switching transistor, its drain connected to a power supply, and its source connected to the drain of the fourth switching transistor. The fourth magnetic bead has its first end connected to the output of the fourth acceleration circuit, its second end connected to the gate of the fourth switching transistor, and its source grounded.

7. The programmable power supply circuit based on gallium nitride technology according to any one of claims 2 to 4, characterized in that, The first driving circuit further includes a first buffer circuit, which is used to absorb the spike voltage generated by the first switching transistor and the second switching transistor. The first buffer circuit includes a ninth resistor, a tenth resistor, an eleventh resistor, a first capacitor, a second capacitor, and a third capacitor; wherein, the first terminal of the first capacitor is connected to the first power supply terminal of the first driver chip and the first terminal of the eleventh resistor respectively, the second terminal of the first capacitor is connected to the first terminal of the ninth resistor, the second terminal of the ninth resistor is connected to the first terminal of the tenth resistor and ground respectively, the second terminal of the tenth resistor is connected to the first terminal of the second capacitor, the second terminal of the second capacitor is connected to the digital circuit power supply terminal of the first driver chip, the first terminal of the third capacitor is connected to the second terminal of the eleventh resistor, and the second terminal of the third capacitor is connected to the digital circuit power supply terminal of the first driver chip; The second driving circuit also includes a second buffer circuit, which is used to absorb the spike voltage generated by the third and fourth switching transistors; The second buffer circuit includes a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fourth capacitor, a fifth capacitor, and a sixth capacitor; wherein, the first end of the fourth capacitor is connected to the first power supply terminal of the second driver chip and the first end of the fourteenth resistor, the second end of the fourth capacitor is connected to the first end of the twelfth resistor, the second end of the twelfth resistor is connected to the first end of the thirteenth resistor and ground, the second end of the thirteenth resistor is connected to the first end of the fifth capacitor, the second end of the fifth capacitor is connected to the digital circuit power supply terminal of the first driver chip, the first end of the sixth capacitor is connected to the second end of the fourteenth resistor, and the second end of the sixth capacitor is connected to the digital circuit power supply terminal of the first driver chip.

8. The programmable power supply circuit based on gallium nitride technology according to any one of claims 1 to 4, characterized in that, The alarm detection circuit includes a seventh capacitor, an eighth capacitor, a fifteenth resistor, and a sixteenth resistor, which are connected in parallel.

9. A control method for a programmable power supply circuit based on gallium nitride technology, wherein the control method is implemented based on the programmable power supply circuit as described in any one of claims 1-8, characterized in that, include: The control sine wave generating circuit outputs a first pulse modulation signal and a second pulse modulation signal, the first pulse modulation signal and the second pulse modulation signal having the same amplitude and frequency but opposite phase; After controlling the first driving circuit to drive, boost, and accelerate the first pulse modulation signal, the first switching transistor in the first driving circuit is turned on and off. After controlling the first driving circuit to drive and accelerate the second pulse modulation signal, the second switching transistor in the first driving circuit is turned on and off. After controlling the second driving circuit to drive and accelerate the first pulse modulation signal, the third switch in the second driving circuit is turned on and off. After controlling the second driving circuit to drive, boost and accelerate the second pulse modulation signal, the fourth switch in the second driving circuit is turned on and off. The first, second, third, and fourth switching transistors are gallium nitride switching transistors.

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