A high-power multi-section transmission filter vertical cavity surface emitting laser

Abstract

This invention discloses a high-power, multi-segment, transmission-filtered vertical-plane emitting laser, comprising: a substrate; a DBR (Diverterless Laser Reflector) unit disposed on the substrate surface; a laser gain unit and a transmission-filtering unit disposed on the side of the reflector unit away from the substrate, wherein the laser gain unit and the transmission-filtering unit are stacked adjacently and alternately to form a multi-segment structure, the stacking direction being perpendicular to the substrate; each laser gain unit emits laser light after being powered on, the laser light emitted in the direction away from the reflector unit passes through multiple transmission-filtering units before being output, and the laser light emitted towards the reflector unit is reflected by the reflector unit and then passes through multiple transmission-filtering units before being output. This invention adopts an incident laser structure with a single DBR, long cavity, multiple segments, high gain, narrow spectral line, filtering, low reflectivity at the output end, and high power structure design, solving the problems of traditional VCSELs with two DBRs, short cavity, low gain, wide spectral line, high reflectivity and low transmission at the output end DBR, and low power.

Description

Technical Field

[0001] This invention relates to the field of laser devices, and more particularly to a high-power enhanced multi-section transmission filter vertical surface emitting laser. Background Technology

[0002] Existing conventional VCSELs typically use an optical structure consisting of two DBR mirrors, forming an FP laser cavity. This has the following problems: 1) In order to select a single-cavity, single-segment, single-mode operating mode, the resonant cavity length must be very short, only about one wavelength thick. This limits the length of the optical gain range, requires the emitter to have a reflectivity of up to 99%, and only about 1% of the optical power is output, which greatly suppresses the emitted light intensity; 2) The short resonant cavity also results in a wide spectrum and poor output light source quality. Summary of the Invention

[0003] Therefore, this invention provides a high-power, multi-section transmission filter vertical-plane emitting laser. By significantly increasing the volume and number of gain units, the optical gain is effectively improved. By adding multiple transmission filter units and the positive feedback effect of mutual optical pumping between each gain unit, the laser output with strong monochromaticity is effectively achieved. The output efficiency is greatly improved by using a low-reflectivity, high-transmittance output layer. This effectively solves the problems of output power suppression, spectral width, and poor performance caused by the short resonant cavity, low optical gain, and high reflectivity of the output DBR in traditional VCSELs.

[0004] This invention provides a high-power, multi-section gain transmission-filtered vertical-plane emitting laser, comprising: a substrate; a DBR (Distributed Backing Array) reflector unit disposed on the surface of the substrate; multiple laser gain units and multiple transmission-filtering units, the laser gain units and the transmission-filtering units being disposed on the side of the DBR reflector unit away from the substrate, and the laser gain units and the transmission-filtering units being stacked alternately to form a multi-section structure, the stacking direction of the laser gain units and the transmission-filtering units being perpendicular to the substrate; wherein, each of the laser gain units emits laser light when energized, the laser light emitted in the direction away from the DBR reflector unit passes through the multiple transmission-filtering units before being output, and the laser light emitted towards the DBR reflector unit is reflected by the DBR reflector unit and then passes through the multiple transmission-filtering units before being output.

[0005] Compared with the existing technology, the technical effects achieved by adopting this technical solution are as follows: The high-power enhanced multi-section transmission filter vertical surface emitting laser is different from the two DBR high reflectivity short cavity working mode of the traditional FP laser cavity. The present invention adopts the light incident laser working mode, with only one DBR reflection unit used for reflection, and the rest are laser gain units and transmission filter units. Each laser gain unit can emit laser light independently after being powered on. In the laser light emitted away from the DBR reflection unit, monochromatic light corresponding to the wavelength of the transmission filter unit can pass through the transmission filter unit and be output. In the laser light emitted towards the DBR reflection unit, monochromatic light corresponding to the wavelength of the DBR reflection unit is reflected and then filtered by multiple transmission filter units before being output. Therefore, both the transmission filter unit and the DBR reflection unit can select laser light of a specified wavelength, resulting in better monochromaticity of the output light. Each laser gain unit can serve as a pump source for other laser gain units, coherently exciting each other and improving the luminous efficiency and monochromaticity of the laser. Furthermore, compared to the single-cavity, single-segment, single-mode operation of the FP laser cavity, the large... The wavelength of the output light from the multi-section transmission filter vertical surface emitting laser is determined by the transmission filter unit and the DBR reflection unit, rather than by the cavity length of the laser gain unit. Therefore, the laser gain unit has no thickness or cavity length limitation, and the optical gain region length can be increased to increase the optical gain. At the same time, the number of sections of the laser gain unit and the transmission filter unit can be increased to further improve the intensity of the output light. The DBR reflection unit, the laser gain unit, and the transmission filter unit are stacked vertically on the substrate to output vertical light, which can effectively utilize the space on the substrate. Multiple vertical sections of the DBR reflection unit, the laser gain unit, and the transmission filter unit can also be set on the same substrate to achieve high-gain, high-power optical output with multiple sections.

[0006] Furthermore, the center operating wavelength of the output light from the high-power enhanced multi-section transmission filter vertical surface emitting laser is λ0; wherein, the DBR reflective unit is a multi-layer structure, with two adjacent layers forming a period, where n represents the effective optical refractive index of any two adjacent layers, and the period thickness is... And / or, the thickness of each layer of the DBR reflective unit is .

[0007] The technical effect achieved by adopting this technical solution is that the DBR reflection unit design can have extremely high reflectivity for the required monochromatic light wavelength λ0, so that the returned monochromatic light is filtered again through the multiple transmission filter units, thereby improving the monochromaticity of the output light.

[0008] Furthermore, the DBR reflective unit is formed by alternating stacks of a first semiconductor material layer and a second semiconductor material layer with different refractive indices. The refractive index of the first semiconductor material layer is n1, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n2, and the thickness of the second semiconductor material layer is... .

[0009] The technical effect achieved by adopting this technical solution is as follows: the DBR reflective unit uses the first semiconductor material layer and the second semiconductor material layer to stack alternately to reflect and filter light across the entire beam area, reflecting monochromatic light with a wavelength of λ0.

[0010] Furthermore, the transmission filter unit is formed by alternating stacking of a first semiconductor material layer and a second semiconductor material layer with different refractive indices.

[0011] The technical effects achieved by adopting this technical solution are as follows: the transmission filter unit filters the entire beam area through the first semiconductor material layer and the second semiconductor material layer; the multi-layered, full-beam transmission filter unit improves the spectral width and quality of the output light.

[0012] Furthermore, the transmission filter unit has a multi-layer structure, with two adjacent layers forming one cycle, using n... b Represents the effective refractive index of any two adjacent layers, with a periodic thickness of... The refractive index of the first semiconductor material layer is n1, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n2, and the thickness of the second semiconductor material layer is... .

[0013] The technical effect achieved by adopting this technical solution is that the transmission filter unit can pass monochromatic light with wavelength λ0 in the laser, further ensuring the monochromaticity of the output light.

[0014] Furthermore, the plurality of transmission filter units include P-type transmission filter units and N-type transmission filter units, which are arranged alternately.

[0015] The technical effects achieved by adopting this technical solution are as follows: regardless of whether the laser emitted along the direction away from the substrate or the laser reflected back by the DBR reflection unit, after passing through multiple laser gain units, it can play an optical pumping role and achieve an increase in light intensity and an enhancement of monochromaticity.

[0016] Furthermore, among the plurality of laser gain units and the plurality of transmission filter units, the P-type transmission filter unit furthest from the DBR reflection unit is the top transmission filter layer, serving as the light output end.

[0017] The technical effects achieved by adopting this technical solution are as follows: the top transmission filter layer can ensure the monochromaticity of the output light, while the reflected light is repeatedly filtered after passing through the DBR reflection unit, the laser gain unit and the transmission filter unit, thereby further improving the monochromaticity of the output light.

[0018] Furthermore, the high-power enhanced multi-section transmission filter vertical surface emitting laser also includes a power supply, and the connection structure between the power supply and the DBR reflection unit and the transmission filter unit includes a direct structure, a parallel structure, or a series structure; the substrate is an n-type semiconductor or a p-type semiconductor.

[0019] The direct structure is as follows: only the DBR reflective unit and the top transmission filter layer are doped with n+ or p+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor and the top transmission filter layer is a p+ type semiconductor; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor and the top transmission filter layer is an n+ type semiconductor; the n+ type semiconductor is connected to the negative terminal of the power supply, and the p+ type semiconductor is connected to the positive terminal of the power supply.

[0020] The parallel structure is as follows: not only are n+ or p+ type semiconductors doped into the DBR reflective unit and the top transmission filter layer, but the remaining transmission filter units between the DBR reflective unit and the top transmission filter layer are alternately doped with p+ and n+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor and the top transmission filter layer is a p+ type semiconductor; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor and the top transmission filter layer is an n+ type semiconductor; all the p+ type semiconductors are connected to the positive terminal of the power supply, and all the n+ type semiconductors are connected to the negative terminal of the power supply.

[0021] The series structure is as follows: not only are n+ or p+ type semiconductors doped in the DBR reflective unit and the top transmission filter layer, but the remaining transmission filter units between the DBR reflective unit and the top transmission filter layer are alternately doped with p+ and n+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor, the top transmission filter layer is a p+ type semiconductor, the top transmission filter layer is connected to the positive terminal of the power supply, and the DBR reflective unit is connected to the negative terminal of the power supply; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor, the top transmission filter layer is an n+ type semiconductor, the top transmission filter layer is connected to the negative terminal of the power supply, and the DBR reflective unit is connected to the positive terminal of the power supply.

[0022] The technical effects achieved by adopting this technical solution are as follows: the laser gain unit and the transmission filter unit form a section, and the sections mutually excite and pump each other, improving luminous efficiency and monochromaticity; the P-type transmission filter unit and the N-type transmission filter unit are connected in parallel to the power supply, which can have sufficient excitation effect even under low voltage conditions; and the DBR reflection unit, the laser gain unit, and the transmission filter unit are connected in series, and the current flowing through them is the same; furthermore, each section formed by the laser gain unit and the transmission filter unit does not need to be connected to the positive and negative terminals of the power supply separately, thus simplifying the manufacturing process.

[0023] Furthermore, in the case where the substrate is an n-type semiconductor and in the case where the substrate is a p-type semiconductor, the doping methods of the DBR reflective unit and the remaining transmission filter units between the top transmission filter layer are opposite.

[0024] The technical effects achieved by adopting this technical solution are as follows: when the substrate is an n-type semiconductor or a p-type semiconductor, the remaining transmission filter units and the laser gain units can be turned on to perform filtering and optical pumping functions, thereby realizing the series structure and the parallel structure.

[0025] In summary, the various embodiments of this application described above may have one or more of the following advantages or beneficial effects:

[0026] i) The high-power, multi-section transmission-filtered vertical-plane emitting laser differs from the traditional FP laser cavity's two DBR high-reflectivity short-cavity operating mode. This invention employs a light-incident laser operating mode, with only one DBR reflecting unit used for reflection, and the rest being laser gain units and transmission-filtering units. Each laser gain unit can emit laser light independently after being powered on. In the laser emitted away from the DBR reflecting unit, monochromatic light corresponding to the wavelength of the transmission-filtering unit can pass through the transmission-filtering unit and be output. Conversely, in the laser emitted towards the DBR reflecting unit, monochromatic light corresponding to the wavelength of the DBR reflecting unit is reflected, then filtered by multiple transmission-filtering units before being output. Therefore, both the transmission-filtering unit and the DBR reflecting unit can select laser light of a specified wavelength, resulting in better monochromaticity of the output light.

[0027] ii) Each of the laser gain units can serve as the optical pump source for the other laser gain units, coherently exciting each other to improve the luminous efficiency of the laser and enhance the monochromaticity of the light;

[0028] iii) Compared to the short-cavity single-segment single-mode operation of the FP laser cavity, the wavelength of the output light of the high-power multi-segment transmission filter vertical surface emitting laser is mainly determined by the transmission filter unit rather than the cavity length of the laser resonant cavity. Therefore, the laser gain unit is not strictly limited in thickness, and the thickness of the optical gain region can be increased to increase the optical gain. At the same time, the number of segments can be increased to improve the intensity of the output light.

[0029] iv) The DBR reflection unit, the laser gain unit, and the transmission filter unit are vertically stacked on the substrate to output vertical light. This can effectively utilize the space on the substrate. Furthermore, multiple vertical laser gain units and transmission filter units can be set on the same substrate to achieve multi-section high-gain, high-power optical output.

[0030] v) Compared with existing edge-emitting distributed grating DFB lasers, no grating is required, the transmission filter unit and the DBR reflection unit do not require secondary epitaxial growth, and there is no need for anti-reflection at the emission end and polishing and coating at the AR end, which greatly simplifies the process and reduces costs. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1This is a schematic diagram of a high-power enhanced multi-section transmission filter vertical surface emitting laser provided in an embodiment of the present invention.

[0033] Figure 2 for Figure 1 A magnified view of region I in the middle.

[0034] Figure 3 for Figure 1 Enlarged view of region II.

[0035] Figure 4 for Figure 1 A schematic diagram of the circuit structure of a medium-to-high power multi-section transmission filter vertical plane emitting laser.

[0036] Figure 5 for Figure 1 A schematic diagram of another circuit structure for a medium-to-high power multi-section transmission filter vertical plane emitting laser.

[0037] Figure 6 for Figure 1 Another structural schematic diagram of a medium-to-high power multi-section transmission filter vertical plane emitting laser.

[0038] Explanation of key component symbols:

[0039] 100 is a high-power, multi-section transmission filter vertical-plane emitting laser; 110 is a substrate; 120 is a laser gain unit; 130 is a transmission filter unit; 131 is a top transmission filter layer; 140 is a DBR reflection unit; 141 is a first semiconductor material layer; 142 is a second semiconductor material layer; 150 is the positive electrode; 160 is the negative electrode. Detailed Implementation

[0040] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0041] See Figures 1-3This invention provides a multi-section gain transmission filter vertical surface emitting laser, comprising: a substrate 110; a DBR reflection unit 140 disposed on the surface of the substrate 110; multiple laser gain units 120 and multiple transmission filter units 130, the laser gain units 120 and transmission filter units 130 being disposed on the side of the DBR reflection unit 140 away from the substrate 110, and the laser gain units 120 and transmission filter units 130 being stacked alternately to form a multi-section structure, the stacking direction of the laser gain units 120 and transmission filter units 130 being perpendicular to the substrate 110; wherein, each laser gain unit 120 emits laser light after being powered on, the laser light emitted in the direction away from the DBR reflection unit 140 is output after passing through multiple transmission filter units 130, and the laser light emitted toward the DBR reflection unit 140 is reflected by the DBR reflection unit 140 and then output after passing through multiple transmission filter units 130.

[0042] In one specific embodiment, the plurality of transmission filter units 130 include P-type transmission filter units and N-type transmission filter units, which are arranged alternately. Among the plurality of laser gain units 120 and the plurality of transmission filter units 130, the P-type transmission filter unit furthest from the DBR reflection unit 140 is the top transmission filter layer 131, which serves as the light output end.

[0043] In this embodiment, the high-power, multi-section transmission filter vertical surface emitting laser 100 differs from the traditional FP laser cavity's two DBR high-reflectivity short-cavity operating mode. This invention employs a light-incident laser operating mode, with only one DBR reflection unit 140 for reflection; the rest are laser gain units 120 and transmission filter units 130. Each laser gain unit 120 emits laser light after being powered on. For a single-path transmission light, propagating away from the top of the substrate 110, the light first passes through the transmission filter unit 130 to transmit monochromatic transmitted light. This monochromatic transmitted laser then propagates to the next laser gain unit 120, acting as a light pump source to excite the next laser gain unit 120. This process continues, resulting in increasingly better monochromaticity of the transmitted laser, which finally passes through the top transmission filter layer 131 for final filtering before being output. For... The other path of the detour-reflective laser initially propagates towards the substrate 110. Therefore, the longer path of this laser not only requires multiple passes through the transmission filter unit 130 and more pumping and excitation of the semiconductor laser gain unit 120 during propagation, but also passes through the strong reflective filter of the DBR reflection unit 140. As a result, the monochromaticity of this propagating laser is better. Finally, the light from the two direct transmission paths and the light reflected from the DBR reflection unit 140 converges at the light output end and is emitted and output away from the top of the substrate through the top transmission filter layer 131.

[0044] In contrast to the single-cavity, single-segment, single-mode operation of the FP laser cavity, the wavelength of the output light of the high-power, multi-segment transmission-filtering vertical-plane emitting laser 100 is mainly determined by the transmission filter unit 130 rather than the cavity length of the laser gain unit 120. Therefore, the laser gain unit 120 does not have strict thickness limitations, and the thickness of the optical gain region can be increased to increase the optical gain and improve the intensity of the output light. The DBR reflection unit 140, the laser gain unit 120, and the transmission filter unit 130 are vertically stacked on the substrate 110 to output vertical light, which can effectively utilize the space on the substrate 110. Multiple sets of vertical laser gain units 120 and transmission filter units 130 can also be set on the same substrate 110 to achieve high-gain, high-power optical output with multiple segments.

[0045] Furthermore, compared to edge-emitting distributed grating DFB lasers, this design eliminates the need for gratings, secondary epitaxial growth of semiconductor materials, and the need for anti-reflection coating at the emitter and polishing and coating at the AR end, significantly simplifying the process and reducing costs. The laser gain unit 120 and transmission filter unit 130 are stacked in an alternating manner, avoiding phase shifts caused by significant errors from mechanical cutting.

[0046] It should be noted that among the multiple laser gain units 120 and multiple transmission filter units 130, the side connected to the DBR reflection unit 140 can be either the laser gain unit 120 or the transmission filter unit 130. Preferably, since the DBR reflection unit has reflective filtering performance, there is no need to add or select a transmission filter unit 130, as it still has a filtering effect. Furthermore, the direct connection between the laser gain unit 120 and the DBR reflection unit 140 can effectively save costs.

[0047] The number of laser gain units 120 and transmission filter units 130 can be determined according to the application requirements of the device, and is not limited here.

[0048] In one specific embodiment, the center operating wavelength of the output light from the high-power enhanced multi-section transmission filter vertical surface emitting laser 100 is λ0; wherein, the DBR reflective unit 140 has a multi-layer structure, with two adjacent layers forming one period, and the period thickness is [missing information]. And / or, the thickness of each layer of the DBR reflective unit 140 is The DBR reflection unit 140 can reflect monochromatic light with wavelength λ0 in the laser, so that the returned monochromatic light is filtered again by multiple transmission filter units 130, thereby improving the monochromaticity of the output light.

[0049] In one specific embodiment, the DBR reflective unit 140 is formed by alternating stacks of a first semiconductor material layer 141 and a second semiconductor material layer 142 with different refractive indices. The refractive index of the first semiconductor material layer 141 is n1, and the thickness of the first semiconductor material layer 141 is... The refractive index of the second semiconductor material layer 142 is n2, and the thickness of the second semiconductor material layer 142 is... The DBR reflective unit 140 filters light across the entire beam region by alternating stacking of a first semiconductor material layer 141 and a second semiconductor material layer 142, reflecting monochromatic light with a wavelength of λ0.

[0050] In one specific embodiment, the transmission filter unit 130 is formed by alternating stacks of a first semiconductor material layer 141 and a second semiconductor material layer 142 with different refractive indices. The transmission filter unit 130 filters the entire beam region through the first semiconductor material layer 141 and the second semiconductor material layer 142, achieving higher efficiency compared to partial grating region filtering in an edge-emitting distributed grating (DFB) laser. The multi-layered transmission filter unit 130 improves the spectral width and quality of the output light.

[0051] In one specific embodiment, the transmission filter unit 130 has a multi-layer structure, with two adjacent layers forming one cycle, using n. b Represents the effective refractive index of any two adjacent layers, with a periodic thickness of... The refractive index of the first semiconductor material layer 141 is n1, and the thickness of the first semiconductor material layer 141 is... The refractive index of the second semiconductor material layer 142 is n2, and the thickness of the second semiconductor material layer 142 is... The transmission filter unit 130 can pass monochromatic light with wavelength λ0 in the laser, ensuring the monochromaticity of the output light.

[0052] In one specific embodiment, the high-power enhanced multi-section transmission filter vertical surface emitting laser 100 also includes a power supply, and the connection structure between the power supply and the DBR reflection unit 140 and the transmission filter unit 130 includes a direct structure, a parallel structure, or a series structure; the substrate 110 is an n-type semiconductor or a p-type semiconductor.

[0053] Among them, see Figure 1The direct structure is as follows: only the DBR reflective unit 140 and the top transmission filter layer 131 are doped to form n+ type semiconductors or p+ type semiconductors; when the substrate 110 is an n- type semiconductor, the DBR reflective unit 140 is an n+ type semiconductor and the top transmission filter layer 131 is a p+ type semiconductor; when the substrate 110 is a p- type semiconductor, the DBR reflective unit 140 is a p+ type semiconductor and the top transmission filter layer 131 is an n+ type semiconductor; the n+ type semiconductor is connected to the negative terminal of the power supply 160, and the p+ type semiconductor is connected to the positive terminal of the power supply 150.

[0054] Among them, see Figure 4 The parallel structure is as follows: not only are n+ type semiconductors or p+ type semiconductors formed in the DBR reflective unit 140 and the top transmission filter layer 131, but the remaining transmission filter units 130 between the DBR reflective unit 140 and the top transmission filter layer 131 are alternately doped with p+ type semiconductors and n+ type semiconductors; when the substrate 110 is an n- type semiconductor, the DBR reflective unit 140 is an n+ type semiconductor and the top transmission filter layer 131 is a p+ type semiconductor; when the substrate 110 is a p- type semiconductor, the DBR reflective unit 140 is a p+ type semiconductor and the top transmission filter layer 131 is an n+ type semiconductor; all p+ type semiconductors are connected to the positive terminal of the power supply 150, and all n+ type semiconductors are connected to the negative terminal of the power supply 160.

[0055] Among them, see Figure 5 The series structure is as follows: not only are n+ type semiconductors or p+ type semiconductors formed in the DBR reflective unit 140 and the top transmission filter layer 131, but the remaining transmission filter units 130 between the DBR reflective unit 140 and the top transmission filter layer 131 are alternately doped with p+ type semiconductors and n+ type semiconductors; when the substrate 110 is an n- type semiconductor, the DBR reflective unit 140 is an n+ type semiconductor, the top transmission filter layer 131 is a p+ type semiconductor, the top transmission filter layer 131 is connected to the positive terminal of the power supply 150, and the DBR reflective unit 140 is connected to the negative terminal of the power supply 160; when the substrate 110 is a p- type semiconductor, the DBR reflective unit 140 is a p+ type semiconductor, the top transmission filter layer 131 is an n+ type semiconductor; the top transmission filter layer 131 is connected to the negative terminal of the power supply 160, and the DBR reflective unit 140 is connected to the positive terminal of the power supply 150.

[0056] It should be noted that the laser gain unit 120 and the transmission filter unit 130 form a section, and the sections excite each other to improve the light efficiency; the P-type transmission filter unit and the N-type transmission filter unit are connected in parallel to the positive terminal 150 and the negative terminal 160 of the power supply, respectively, so that they can be used under low voltage conditions.

[0057] The P-type and N-type transmission filter units are connected in series in a pnpn manner. If current is only passed through the top transmission filter layer 131 and DBR reflection unit 140 of the series structure, the requirement of equal current application can be achieved. Each pn section does not need to be connected to the positive and negative terminals 150 and 160 of the power supply separately, so the processing is simple.

[0058] Preferably, a circular opening is formed in the center of the positive electrode 150 for outputting laser light.

[0059] In one specific embodiment, when the substrate 110 is an n-type semiconductor and when the substrate 110 is a p-type semiconductor, the doping methods of the DBR reflective unit 140 and the remaining transmission filter units 130 between the top transmission filter layer 131 are opposite. This allows the remaining transmission filter units 130 and the laser gain unit 120 to conduct, performing filtering and optical pumping functions, thus realizing both series and parallel structures. For example, when the substrate 110 is an n-type semiconductor, the transmission filter unit 130 is doped with pnpn, and when the substrate 110 is a p-type semiconductor, the transmission filter unit 130 is doped with npnp.

[0060] In another specific embodiment, see Figure 6 Based on the direct structure, the positions of the top transmission filter layer 131 and the DBR reflection unit 140 can be interchanged. In this case, the DBR reflection unit 140 is located on the side of the laser gain unit 120 and the filter unit 130 away from the substrate 110. For a direct transmission light beam, the propagation direction is towards the bottom surface of the substrate 110. The light first passes through the transmission filter unit 130 to transmit monochromatic transmitted light. This monochromatic transmitted laser then propagates to the next laser gain unit 120, which acts like a light pump source to excite the next laser gain unit 120. This process continues, making the monochromaticity of the transmitted laser increasingly better, until it finally passes through the top transmission filter layer 131 for final filtering and is then output. For the other detour-reflection laser beam, its initial... The secondary propagation direction is away from the substrate 110, so the back-and-forth path of the light is longer. In addition to passing through the transmission filter unit 130 several times and pumping the semiconductor laser gain unit 120 more during propagation, it also has to pass through the strong reflective filter of the DBR reflection unit 140. Therefore, the monochromaticity of the laser propagated in this path will be better. Finally, the light from the two direct transmission and the light reflected back from the DBR reflection unit 140 converges at the light output end and is emitted towards the bottom of the substrate 110 through the top transmission filter layer 131, also known as back-side emission.

[0061] Preferably, a circular opening is formed between the negative electrode 160 and the substrate 110 for outputting laser light.

[0062] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-power enhanced multi-section transmission filter vertical-plane emitting laser, characterized in that, include: Substrate; DBR reflective unit, wherein the DBR reflective unit is disposed on the surface of the substrate; The system comprises multiple laser gain units and multiple transmission filter units, which are located on the side of the DBR reflection unit away from the substrate. The laser gain units and the transmission filter units are stacked alternately to form a multi-section structure, and the stacking direction of the laser gain units and the transmission filter units is perpendicular to the substrate. Each of the laser gain units emits laser light after being powered on. Laser light propagating away from the DBR reflection unit is output after passing through multiple transmission filter units. Laser light propagating towards the DBR reflection unit is reflected and filtered by the DBR reflection unit, and then output after passing through multiple transmission filter units. Only one of the DBR reflective units is used for reflection; the rest are laser gain units and transmission filter units.

2. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 1, characterized in that, The center operating wavelength of the output light from the high-power enhanced multi-section transmission filter vertical surface emitting laser is λ0. The DBR reflective unit has a multi-layer structure, with two adjacent layers forming a period. Let n represent the effective refractive index of any two adjacent layers, and the period thickness be... And / or, the thickness of each layer of the DBR reflective unit is .

3. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 2, characterized in that, The DBR reflective unit is formed by alternating stacks of a first semiconductor material layer and a second semiconductor material layer with different refractive indices. The refractive index of the first semiconductor material layer is n1, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n2, and the thickness of the second semiconductor material layer is... .

4. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 2, characterized in that, The transmission filter unit is formed by alternating stacking of a first semiconductor material layer and a second semiconductor material layer with different refractive indices.

5. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 4, characterized in that, The transmission filter unit has a multi-layer structure, with two adjacent layers forming one cycle, denoted by n. b Represents the effective refractive index of any two adjacent layers, with a periodic thickness of... The refractive index of the first semiconductor material layer is n1, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n2, and the thickness of the second semiconductor material layer is... .

6. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to any one of claims 1-5, characterized in that, The plurality of transmission filter units include P-type transmission filter units and N-type transmission filter units, which are arranged alternately.

7. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 6, characterized in that, Among the multiple laser gain units and multiple transmission filter units, the P-type transmission filter unit furthest from the DBR reflection unit is the top transmission filter layer, serving as the light output end.

8. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 7, characterized in that, The high-power enhanced multi-section transmission filter vertical surface emitting laser also includes a power supply, and the connection structure between the power supply and the DBR reflection unit and the transmission filter unit includes a direct structure, a parallel structure, or a series structure; the substrate is an n-type semiconductor or a p-type semiconductor. The direct structure is as follows: only the DBR reflective unit and the top transmission filter layer are doped with n+ or p+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor and the top transmission filter layer is a p+ type semiconductor; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor and the top transmission filter layer is an n+ type semiconductor; the n+ type semiconductor is connected to the negative terminal of the power supply, and the p+ type semiconductor is connected to the positive terminal of the power supply. The parallel structure is as follows: not only are n+ or p+ type semiconductors doped into the DBR reflective unit and the top transmission filter layer, but the remaining transmission filter units between the DBR reflective unit and the top transmission filter layer are alternately doped with p+ and n+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor and the top transmission filter layer is a p+ type semiconductor; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor and the top transmission filter layer is an n+ type semiconductor; all the p+ type semiconductors are connected to the positive terminal of the power supply, and all the n+ type semiconductors are connected to the negative terminal of the power supply. The series structure is as follows: not only are n+ or p+ type semiconductors doped in the DBR reflective unit and the top transmission filter layer, but the remaining transmission filter units between the DBR reflective unit and the top transmission filter layer are alternately doped with p+ and n+ type semiconductors; when the substrate is an n- type semiconductor, the DBR reflective unit is an n+ type semiconductor, the top transmission filter layer is a p+ type semiconductor, the top transmission filter layer is connected to the positive terminal of the power supply, and the DBR reflective unit is connected to the negative terminal of the power supply; when the substrate is a p- type semiconductor, the DBR reflective unit is a p+ type semiconductor, the top transmission filter layer is an n+ type semiconductor, the top transmission filter layer is connected to the negative terminal of the power supply, and the DBR reflective unit is connected to the positive terminal of the power supply.

9. The high-power enhanced multi-section transmission filter vertical plane emitting laser according to claim 8, characterized in that, In the case where the substrate is an n-type semiconductor and in the case where the substrate is a p-type semiconductor, the doping methods of the DBR reflective unit and the remaining transmission filter units between the top transmission filter layer are opposite.

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