Power supply circuit, power supply voltage providing method, and memory

Abstract

The present disclosure relates to the field of semiconductor circuit design, and particularly relates to a power supply circuit, a method for providing a power supply voltage, and a memory. The power supply circuit comprises: a temperature sensing module configured to generate a positive temperature coefficient voltage based on a reference signal, a voltage value of the positive temperature coefficient voltage being positively correlated with a temperature value; a judgment module connected to the temperature sensing module and configured to generate a driving signal based on a comparison result of a temperature reference voltage and the positive temperature coefficient voltage, a voltage value of the temperature reference voltage being the same as a voltage value of the positive temperature coefficient voltage at a preset temperature; and a power supply module connected to the judgment module and the temperature sensing module and configured to determine, according to the driving signal, whether to provide a first internal power supply voltage or a temperature control voltage, the voltage value of the temperature control voltage being the same as the voltage value of the positive temperature coefficient voltage, so as to dynamically adjust a substrate voltage of a MOS with the temperature.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor circuit design, and in particular to a power supply circuit, a method for providing power supply voltage, and a memory. Background Technology

[0002] In chip design, the output voltage of the power supply circuit is usually set to be constant. In applications where power supply control based on temperature is required, a separate detection circuit is designed to detect the temperature and output a control signal based on the detection result. This approach typically results in a more complex circuit structure and higher power consumption.

[0003] With the increasing demand for smaller chip sizes, simplifying the circuit design within chips has become a pressing issue in this field. Summary of the Invention

[0004] This disclosure provides a power supply circuit, a method for providing power supply voltage, and a memory, which dynamically adjust the generated voltage according to temperature, thereby reducing the power consumption of the power supply circuit.

[0005] One embodiment of this disclosure provides a power supply circuit, including: a temperature sensing module configured to generate a positive temperature coefficient voltage based on a reference signal, wherein the voltage value of the positive temperature coefficient voltage is positively correlated with the temperature; a judgment module connected to the temperature sensing module configured to generate a drive signal based on a comparison result of a temperature reference voltage and a positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature; and a power supply module connected to the judgment module and the temperature sensing module configured to determine, based on the drive signal, whether to provide a first internal power supply voltage or a temperature control voltage, wherein the voltage value of the temperature control voltage is the same as the voltage value of the positive temperature coefficient voltage.

[0006] Additionally, the temperature sensing module includes: a sensing unit configured to generate a positive temperature coefficient voltage based on a reference signal; and a generation unit connected to the judgment module and the sensing unit, driven by a drive signal, configured to generate a temperature control voltage based on the positive temperature coefficient voltage.

[0007] In addition, the positive temperature coefficient voltage includes: a first positive temperature coefficient voltage and a second positive temperature coefficient voltage, wherein the voltage value of the first positive temperature coefficient voltage is greater than the voltage value of the second positive temperature coefficient voltage; the judgment module is configured to generate a drive signal based on the comparison result of the temperature reference voltage and the second positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature.

[0008] Additionally, the sensing unit includes: a first amplifier, with its negative input terminal used to receive a reference signal; a first PMOS transistor, with its gate connected to the output terminal of the first amplifier, its source receiving a second internal power supply voltage, and its drain serving as the first output terminal to output a first positive temperature coefficient voltage, wherein the voltage value of the second internal power supply voltage is greater than the voltage value of the first internal power supply voltage; a first voltage divider resistor, with its first end connected to the first output terminal and its second end serving as the second output terminal to output a second positive temperature coefficient voltage; a second voltage divider resistor, with its first end connected to the second output terminal and its second end connected to the non-inverting input terminal of the first amplifier; and a temperature control sub-circuit connected between the second end of the second voltage divider resistor and the ground terminal, used to adjust the current flowing through the temperature control sub-circuit according to temperature changes.

[0009] In addition, the sensing unit further includes: a first switching transistor, whose gate receives an enable signal, whose source receives a second internal power supply voltage, and whose drain is connected to the output of the first amplifier; and a second switching transistor, whose gate receives an enable signal and is connected in series between the temperature control sub-circuit and the ground terminal. By incorporating the first and second switching transistors into the circuit of the sensing unit, and by having the first and second switching transistors drive the first amplifier based on the enable signal, the sensing unit is made to conduct only based on the enable signal, thus achieving flexibility in driving the temperature sensing module and saving energy.

[0010] Additionally, the temperature control sub-circuit includes: at least one second PMOS transistor, the source of each second PMOS transistor being connected to the second terminal of a second voltage divider resistor, and the drain being shorted to the gate and coupled to ground. Furthermore, the temperature control sub-circuit also includes: a gating circuit disposed between each second PMOS transistor and the second terminal of the second voltage divider resistor; the gating circuit is activated based on different selection signals. By selecting different second PMOS transistors to form the temperature control sub-circuit through the gating circuit, the output current of the temperature control sub-circuit is adjusted according to the channel width-to-length ratio of the selected second PMOS transistor.

[0011] In addition, the channel width-to-length ratios of different second PMOS transistors are not the same.

[0012] In addition, the judgment module includes: a comparator, one input terminal for receiving a temperature reference voltage, another input terminal for receiving a positive temperature coefficient voltage, and an output terminal for outputting a drive signal.

[0013] Additionally, the generation unit includes: a second amplifier, the negative input terminal of which is used to receive a positive temperature coefficient voltage; a third PMOS transistor, the gate of which is connected to the output terminal of the second amplifier, the source of which receives a second internal power supply voltage, and the drain of which is connected to the positive input terminal of the second amplifier; the drain of the third PMOS transistor is also connected to the first end of a load resistor for outputting a temperature control voltage; the second end of the load resistor is connected to a ground terminal.

[0014] In addition, the generation unit also includes: a third switching transistor, whose gate receives a drive signal, whose source receives a second internal power supply voltage, and whose drain is connected to the output of the second amplifier; and a fourth switching transistor, connected in series between the second end of the load resistor and the ground terminal, with its gate receiving the drive signal. By incorporating the third and fourth switching transistors into the circuit of the generation unit, and by having the third and fourth switching transistors drive the second amplifier based on the drive signal, the generation unit is made to conduct only based on the drive signal, thus achieving stability in the power supply circuit's operating timing.

[0015] In addition, the preset temperature is 50℃.

[0016] Another embodiment of this disclosure also provides a method for providing power supply voltage, applied to the power supply circuit provided in the above embodiment, including: acquiring a positive temperature coefficient voltage; determining the manner of providing power supply voltage based on a comparison result between the positive temperature coefficient voltage and a temperature reference voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature; wherein, if the positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the positive temperature coefficient voltage, and a power supply voltage is provided based on the temperature control voltage; if the positive temperature coefficient voltage is less than or equal to the temperature reference voltage, a power supply voltage is provided based on a first internal power supply voltage.

[0017] In addition, the method for providing the power supply voltage also includes: obtaining a first positive temperature coefficient voltage and a second positive temperature coefficient voltage based on a positive temperature coefficient voltage; determining the method of providing the power supply voltage based on a comparison result of the positive temperature coefficient voltage and a temperature reference voltage, including: determining the method of providing the power supply voltage based on a comparison result of the second positive temperature coefficient voltage and the temperature reference voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature; wherein, if the second positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the first positive temperature coefficient voltage, and the power supply voltage is provided based on the temperature control voltage; if the second positive temperature coefficient voltage is less than or equal to the temperature reference voltage, the power supply voltage is provided based on the first internal power supply voltage.

[0018] Another embodiment of this disclosure also provides a memory including the power supply circuit provided in the above embodiments. Attached Figure Description

[0019] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this disclosure or the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram showing the temperature-substrate voltage-leakage current relationship of a PMOS device.

[0021] Figure 2 This is a schematic diagram of the power supply circuit provided in an embodiment of the present disclosure;

[0022] Figure 3 This is a schematic diagram of the structure of a temperature sensing module provided in an embodiment of the present disclosure;

[0023] Figures 4-6 This is a schematic diagram of the structure of several sensing units provided in an embodiment of the present disclosure;

[0024] Figure 7 A schematic diagram showing the temperature-threshold voltage relationship of PMOS transistors with different channel aspect ratios;

[0025] Figure 8 This is a schematic diagram of the structure of a judgment module provided in an embodiment of the present disclosure;

[0026] Figure 9 This is a schematic diagram of the structure of a generation unit provided in an embodiment of the present disclosure;

[0027] Figure 10 A schematic flowchart illustrating a method for providing power supply voltage according to another embodiment of this disclosure. Detailed Implementation

[0028] For PMOS devices in a chip, the PMOS device is disposed in an N-type substrate, and leakage current mainly occurs through channel leakage and junction leakage. (Reference) Figure 1 For PMOS devices, the channel leakage current and junction leakage current are both temperature-dependent under different substrate voltages. Within a certain temperature range, the leakage current of PMOS devices is relatively small, but when the temperature exceeds a certain level, the leakage current increases significantly with increasing temperature. In addition, the leakage current can be reduced by increasing the substrate potential of the PMOS device. As the substrate potential increases, the leakage current decreases at high temperatures.

[0029] One embodiment of this disclosure provides a power supply circuit that can dynamically adjust the generated voltage according to temperature. When the temperature is below a preset temperature, the power supply circuit can provide a fixed voltage. When the temperature is above the preset temperature, the power supply circuit can provide a voltage that varies with temperature. The power supply circuit can be used to provide voltage to the substrate of a PMOS device, thereby reducing the channel leakage current and junction leakage current of the corresponding PMOS device, thereby improving the performance of the PMOS device.

[0030] It will be understood by those skilled in the art that many technical details have been provided in the various embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments. The division of the following embodiments is for ease of description and should not constitute any limitation on the specific implementation of this disclosure. The various embodiments can be combined with and referenced by each other without contradiction.

[0031] Figure 1 This is a schematic diagram showing the temperature-substrate voltage-leakage current relationship of a PMOS device. Figure 2 This is a schematic diagram of the power supply circuit provided in this embodiment. Figures 3-5 This is a schematic diagram of the structure of several temperature sensing modules provided in this embodiment. Figure 6 This is a schematic diagram showing the temperature-threshold voltage relationship for PMOS devices with different aspect ratios. Figure 7 This is a schematic diagram of the structure of the judgment module provided in this embodiment. Figure 8 This is a schematic diagram of the voltage generation module provided in this embodiment. The power supply circuit provided in this embodiment will be described in detail below with reference to the accompanying drawings:

[0032] refer to Figure 2 The power supply circuit includes:

[0033] The temperature sensing module 101 is configured to generate a positive temperature coefficient voltage based on a reference signal, wherein the magnitude of the positive temperature coefficient voltage is positively correlated with the magnitude of the temperature.

[0034] Specifically, in combination Figure 1 As can be seen from the examples, the higher the temperature, the larger the voltage value of the positive temperature coefficient voltage, and the lower the temperature, the smaller the voltage value of the positive temperature coefficient voltage.

[0035] The judgment module 102, connected to the temperature sensing module 101, is configured to generate a drive signal based on the comparison result of the temperature reference voltage and the positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature.

[0036] In practical applications, the temperature reference voltage is generated based on the bandgap voltage of the memory. Since the bandgap voltage is not affected by the memory temperature, the temperature reference voltage remains constant.

[0037] Furthermore, regarding the aforementioned "preset temperature," in this embodiment, the preset temperature is used to characterize the threshold at which the leakage current increases significantly and insignificantly as the temperature rises. That is, when the actual temperature of the MOS element is higher than the preset temperature, the leakage current increases significantly; when the actual temperature of the MOS element is not higher than the preset temperature, the leakage current increases insignificantly. Figure 1 As can be seen from the examples, Figure 1 The preset temperature of the corresponding MOS element is 50℃; that is, in this embodiment, the preset temperature is set to 50℃ as an example for illustration. In specific applications, the value of the preset temperature can be reasonably set based on the actual temperature-leakage curve of the MOS element.

[0038] The power supply module 103, connected to the judgment module 102 and the temperature sensing module 101, is configured to determine, based on the drive signal, whether to provide a first internal power supply voltage or a temperature control voltage, wherein the voltage value of the temperature control voltage is the same as the voltage value of the positive temperature coefficient voltage.

[0039] Specifically, if the positive temperature coefficient voltage is greater than the temperature reference voltage, the driving signal generated by the judgment module 102 is used to instruct the power supply module 103 to provide the temperature control voltage; if the temperature reference voltage is greater than the positive temperature coefficient voltage, the driving signal generated by the judgment module 102 is used to instruct the power supply module 103 to provide the first internal power supply voltage.

[0040] Regarding the aforementioned "first internal power supply voltage", in some embodiments, the "first internal power supply voltage" is provided by the internal power supply voltage Vcc in the memory.

[0041] For the power supply circuit mentioned above, if the positive temperature coefficient voltage is greater than the temperature reference voltage, that is, the current temperature of the PMOS element is higher than the preset temperature, based on... Figure 1 As the content shows, the leakage current of the PMOS device increases significantly with increasing temperature. At this point, a temperature-controlled voltage is supplied to the substrate of the PMOS device. This temperature-controlled voltage has the same value as the positive temperature coefficient voltage (PTC), which increases with temperature. This dynamically adjusts the substrate voltage of the PMOS device to reduce channel and junction leakage current, thereby improving PMOS device performance. If the temperature reference voltage is greater than the PTC voltage (i.e., the current temperature of the PMOS device is lower than the preset temperature), the voltage is adjusted accordingly. Figure 1As can be seen from the content, at this time, the leakage current of the PMOS element does not change significantly with the increase of temperature. The power supply voltage is directly provided to the substrate of the PMOS element based on the first internal power supply voltage, which does not affect the normal operation of the PMOS element and reduces the power consumption of the power supply circuit.

[0042] Regarding the temperature sensing module 101 provided in this embodiment, in some embodiments, refer to Figure 3 The temperature sensing module 101 includes: a sensing unit 104 configured to generate a positive temperature coefficient voltage based on a reference signal; and a generation unit 105 connected to the judgment module 102 and the sensing unit 104, driven by a driving signal, configured to generate a temperature control voltage based on the positive temperature coefficient voltage.

[0043] As can be seen from the preceding text, in specific applications, the temperature reference voltage of the judgment module 102 is generated based on the bandgap voltage. The bandgap voltage of a typical memory is 1.2V. The positive temperature coefficient voltage generated by the temperature sensing module 101 may be greater than 1.2V. In some embodiments, the positive temperature coefficient voltage includes a first positive temperature coefficient voltage and a second positive temperature coefficient voltage, and the voltage value of the first positive temperature coefficient voltage is greater than the voltage value of the second positive temperature coefficient voltage. Specifically, the voltage value of the positive temperature coefficient voltage is equal to the voltage value of the first positive temperature coefficient voltage, and the second positive temperature coefficient voltage is obtained by voltage division of the first positive temperature coefficient voltage. At this time, the judgment module 102 is configured to generate a drive signal based on the comparison structure of the temperature reference voltage and the second positive temperature coefficient voltage. The voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature. The second positive temperature coefficient voltage is obtained by voltage division of the first positive temperature coefficient voltage. Then, the second positive temperature coefficient voltage is compared with the temperature reference voltage to determine whether the current temperature is higher than the preset temperature. The voltage value of the second positive temperature coefficient voltage can be adjusted by the resistance value of the voltage divider resistor to make the voltage value of the second positive temperature coefficient voltage less than 1.2V, thereby simplifying the design of the judgment module 102.

[0044] refer to Figures 4-6 For the sensing unit 104, this embodiment provides several implementation methods, as follows:

[0045] In one example, refer to Figure 4 The sensing unit 104 includes:

[0046] First amplifier 201, negative inverting input terminal - used to receive reference signal.

[0047] The first PMOS transistor QP1 has its gate connected to the output terminal of the first amplifier 201, its source receiving the second internal power supply voltage Vdd, and its drain serving as the first output terminal to output the first positive temperature coefficient voltage.

[0048] Regarding the aforementioned "second internal power supply voltage", in some embodiments, the "second internal power supply voltage" is provided by the internal power supply voltage Vdd in the memory, and the voltage value of the internal power supply voltage Vdd in the memory is greater than the voltage value of the internal power supply voltage Vcc.

[0049] The first voltage divider resistor Rf1 has its first end connected to the first output terminal, and its second end serving as the second output terminal to output the second positive temperature coefficient voltage.

[0050] The second voltage divider resistor Rf2 has its first end connected to the second output terminal and its second end connected to the positive input terminal + of the first amplifier 201.

[0051] The temperature control sub-circuit 301 is connected between the second terminal of the second voltage divider resistor Rf2 and the ground terminal GND, and is used to adjust the current flowing through the temperature control sub-circuit 301 according to the temperature change.

[0052] Specifically, the temperature control sub-circuit 301 includes at least one second PMOS transistor. The drain of each second PMOS transistor is connected to the second terminal of the second voltage divider resistor Rf2, and the drain is shorted to the gate and coupled to the ground terminal GND.

[0053] For the first amplifier 201 in this example, the non-inverting input voltage at the non-inverting input terminal + is:

[0054] Vfb (first positive temperature coefficient voltage) = Ignd (output current of temperature control sub-circuit 301) * R1 + Vds (1)

[0055] For the second PMOS transistor: Vds = Vgs (2)

[0056]

[0057] Combining equations (1) to (3), we can obtain:

[0058] And Vbp_ref1 (first positive temperature coefficient voltage) = Ignd*(Rf1+Rf2)+Vfb(5)

[0059] Vbp_ref2 (Second positive temperature coefficient voltage) = Rf2 * Vbp_ref1 / (Rf1 + Rf2) (6)

[0060] For PMOS, the higher the temperature, the smaller the threshold voltage Vth, that is, the threshold voltage Vth of the second PMOS transistor decreases as the temperature rises; for the first amplifier 201, according to the virtual short and virtual open characteristics of the amplifier, the input power supply of the positive input terminal + and the negative input terminal - of the first amplifier 201 is the same, while the reference voltage of the negative input terminal - remains unchanged, that is, the positive input voltage Vfb of the positive input terminal + remains unchanged. Based on equation (4), it can be seen that when Vth decreases and Vfb remains unchanged, Ignd needs to be increased accordingly. Combined with the content of equation (5), it can be seen that when Ignd increases, Vbp_ref1 increases, that is, as the temperature rises, the voltage value of the first positive temperature coefficient voltage generated by the temperature sensing module 101 increases. Based on equation (6), it can be seen that the second positive temperature coefficient voltage is obtained by dividing the first positive temperature coefficient voltage based on the first voltage divider resistor Rf1 and the second voltage divider resistor Rf2. The voltage value of the second positive temperature coefficient voltage is less than the voltage value of the first positive temperature coefficient voltage.

[0061] In this example, the judgment module 102 generates a drive signal based on the comparison result of the temperature reference voltage and the second positive temperature coefficient voltage. The voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature.

[0062] In another example, refer to Figure 5 In this example, the temperature sensing module 101 directly outputs a positive temperature coefficient voltage, and the judgment module 102 generates a drive signal based on the comparison result of the temperature reference voltage and the positive temperature coefficient voltage. The voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at the preset temperature; that is, the sensing circuit 104 does not include the second voltage divider resistor Rf2.

[0063] For the first amplifier 201 in this example, the non-inverting input voltage at the non-inverting input terminal + is:

[0064] Vfb (positive temperature coefficient voltage) = Ignd (output current of temperature control sub-circuit 301) * R1 + Vds (1)

[0065] For the second PMOS transistor: Vds = Vgs (2)

[0066]

[0067] Combining equations (1) to (3), we can obtain:

[0068] And Vbp_ref (positive temperature coefficient voltage) = Ignd*Rf1 + Vfb (7)

[0069] For PMOS, the higher the temperature, the smaller the threshold voltage Vth, that is, the threshold voltage Vth of the second PMOS transistor decreases as the temperature rises; for the first amplifier 201, according to the virtual short and virtual open characteristics of the amplifier, the input power supply of the positive input terminal + and the negative input terminal - of the first amplifier 201 is the same, while the reference voltage of the negative input terminal - remains unchanged, that is, the positive input voltage Vfb of the positive input terminal + remains unchanged. Based on equation (4), it can be seen that when Vth decreases and Vfb remains unchanged, Ignd needs to be increased accordingly. Combining the content of equation (7), it can be seen that when Ignd increases, Vbp_ref increases, that is, as the temperature rises, the voltage value of the positive temperature coefficient voltage generated by the temperature sensing module 101 increases.

[0070] In yet another example, see reference Figure 6 In this example, the temperature control sub-circuit 301 includes a plurality of second PMOS transistors. Accordingly, the temperature control sub-circuit 301 also includes a gating circuit between each second PMOS transistor and the second terminal of the second voltage divider resistor Rf2. The gating circuit is turned on based on different selection signals.

[0071] Specifically, the selection circuit includes a selector connected in series between the second PMOS transistor and the second terminal of the second voltage divider resistor Rf2; in specific applications, the corresponding selector can be turned on based on different selection signals, or the same selector can be turned on based on different bits in a multi-bit selection signal, so as to realize the selection of the temperature control transistor and the temperature control sub-transistor.

[0072] refer to Figure 7 It can be seen that for PMOS transistors with different channel width-to-length ratios (W / L), the threshold voltage Vth varies with the channel width-to-length ratio W / L. Specifically, to a certain extent, the smaller the channel width W, the larger the threshold voltage Vth of the PMOS transistor; the smaller the channel length L, the smaller the threshold voltage Vth of the PMOS transistor; if the channel width W and channel length L become large enough, the threshold voltage Vth of the PMOS transistor no longer changes with the channel width-to-length ratio W / L.

[0073] By selecting different second PMOS transistors through a gating circuit to form a temperature control sub-circuit, the output current of the temperature control sub-circuit 301 can be adjusted according to the channel width-to-length ratio of the selected second PMOS transistor.

[0074] In some embodiments, the channel width-to-length ratios of different second PMOS transistors are different.

[0075] It should be noted that the solution of including multiple second PMOS transistors in the temperature control sub-circuit 301 is also applicable. Figure 5 In the example, this embodiment will not be described again.

[0076] Continue to refer to Figures 4-6In some embodiments, the sensing unit 104 further includes: a first switching transistor K1, whose gate receives an enable signal, whose source receives a second internal power supply voltage, and whose drain is connected to the output of the first amplifier 201; and a second switching transistor K2, whose gate receives an enable signal and is connected in series between the temperature control sub-circuit 301 and the ground terminal GND. By incorporating the first switching transistor K1 and the second switching transistor K2 into the circuit of the sensing unit 104, and by having the first switching transistor K1 and the second switching transistor K2 drive the first amplifier 201 based on the enable signal, the sensing unit 104 is turned on only based on the enable signal, thus achieving flexibility in driving the temperature sensing module 101 and saving energy.

[0077] Regarding the aforementioned "enable signal", when the enable signal is high, the first switching transistor K1 is turned off and the second switching transistor K2 is turned on, at which time the temperature sensing module 101 starts to work. In addition, in some embodiments, the first switching transistor K1 and the second switching transistor K2 can also be controlled based on different enable signals. This embodiment does not limit the number of enable signals.

[0078] Regarding the judgment module 102 provided in this embodiment, in some embodiments, reference is made to... Figure 8 The judgment module 102 includes a comparator 203, one input terminal for receiving a temperature reference voltage, another input terminal for receiving a positive temperature coefficient voltage, and an output terminal for outputting a drive signal.

[0079] Specifically, if the positive input terminal of the judgment module 102 receives a positive temperature coefficient voltage and the negative input terminal receives a temperature reference voltage, and the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at the preset temperature, then when the positive temperature coefficient voltage is greater than the temperature reference voltage (i.e., the current temperature of the memory is greater than the preset temperature), the generated drive signal is high; when the positive temperature coefficient voltage is less than the temperature reference voltage (i.e., the current temperature of the memory is less than the preset temperature), the generated drive signal is low. Conversely, if the positive input terminal of the judgment module 102 receives a temperature reference voltage and the negative input terminal receives a positive temperature coefficient voltage, then when the positive temperature coefficient voltage is greater than the temperature reference voltage (i.e., the current temperature of the memory is greater than the preset temperature), the generated drive signal is low; when the positive temperature coefficient voltage is less than the temperature reference voltage (i.e., the current temperature of the memory is less than the preset temperature), the generated drive signal is high.

[0080] It should be noted that the above description of comparator 203 is based on the positive temperature coefficient voltage as an example. As can be seen from the previous discussion, the judgment module 102 can also generate a drive signal by comparing the second positive temperature coefficient voltage and the temperature reference voltage. At this time, the voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at the preset temperature. Based on the above description of the judgment module 102, the positive temperature coefficient voltage can be replaced with the second positive temperature coefficient voltage, and the value of the temperature reference voltage can be adjusted accordingly. This embodiment will not be elaborated further.

[0081] For the generation unit 105 provided in this embodiment, refer to... Figure 9 The generation unit 105 includes: a second amplifier 202, with a negative input terminal for receiving a positive temperature coefficient voltage; a third PMOS transistor QP3, with its gate connected to the output terminal of the second amplifier 202, its source receiving a second internal power supply voltage, and its drain connected to the positive input terminal + of the second amplifier 202; the drain of the third PMOS transistor QP3 is also connected to the first terminal of the load resistor R2 for outputting a temperature control voltage, and the second terminal of the load resistor R2 is connected to the ground terminal GND.

[0082] Specifically, for the generation unit 105, based on the virtual short and virtual open characteristics of the second amplifier 202, it can be known that the temperature control voltage generated by the generation unit 105 based on the positive temperature coefficient voltage has the same voltage value as the temperature control voltage.

[0083] Accordingly, for the scheme in which the judgment module 102 generates a driving signal based on the comparison between the second positive temperature coefficient voltage and the temperature reference voltage, the generation unit 105 generates a temperature control voltage based on the first positive temperature coefficient voltage.

[0084] In some embodiments, the generation unit 105 further includes: a third switching transistor K3, whose gate is used to receive a drive signal, whose source receives a second internal power supply voltage, and whose drain is connected to the output terminal of the second amplifier 202; and a fourth switching transistor K4, which is connected in series with the second terminal of the load resistor R2 and the ground terminal GND, and whose gate receives a drive signal.

[0085] By incorporating a third switching transistor K3 and a fourth switching transistor K4 into the circuit of the generation unit 105, and by having the third switching transistor K3 and the fourth switching transistor K4 drive the second amplifier 202 based on the drive signal, the generation unit 105 is turned on only based on the drive signal, thereby achieving the stability of the power supply circuit's operating timing.

[0086] Specifically, based on Figure 9In the circuit configuration, when the drive signal is high, the generation unit 105 starts working. For the judgment module 102, i.e., when the positive temperature coefficient voltage is greater than the temperature reference voltage, or the second positive temperature coefficient voltage is greater than the temperature reference voltage, the drive signal input to the generation unit 105 is high. This can be achieved by adjusting the input voltages of the positive and negative input terminals of the comparator 203, or by connecting a comparator to the input terminal of the comparator 203, etc. The power supply circuit mentioned in this embodiment can be used to provide substrate voltage to the PMOS element, based on... Figure 1 As can be seen from the content, if the positive temperature coefficient voltage is greater than the temperature reference voltage, meaning the current temperature of the PMOS device is higher than the preset temperature, the leakage current of the PMOS device increases significantly with increasing temperature. In this case, a power supply voltage is provided to the substrate of the PMOS device based on the temperature control voltage. The value of the temperature control voltage is the same as the value of the positive temperature coefficient voltage, and the magnitude of the positive temperature coefficient voltage increases with increasing temperature. This dynamically adjusts the substrate voltage of the PMOS device according to the temperature, thereby reducing the channel leakage current and junction leakage current of the PMOS device and improving its performance. If the temperature reference voltage is greater than the positive temperature coefficient voltage, meaning the current temperature of the PMOS device is lower than the preset temperature, based on... Figure 1 As can be seen from the content, at this time, the leakage current of the PMOS element does not change significantly with the increase of temperature. The power supply voltage is directly provided to the substrate of the PMOS element based on the first internal power supply voltage, which does not affect the normal operation of the PMOS element and reduces the power consumption of the power supply circuit.

[0087] It should be noted that this disclosure, in conjunction with a schematic diagram illustrating the change in leakage current of a PMOS element with temperature, specifically describes how to adjust the substrate voltage of a PMOS element based on temperature to reduce the leakage current of the PMOS element. Those skilled in the art can, based on the content of this disclosure and the schematic diagram illustrating the change in leakage current of an NMOS element with temperature, derive a technical solution for adjusting the substrate voltage of an NMOS element based on temperature to reduce the leakage current of the NMOS element. However, regardless of whether the power supply is applied to the substrate of a PMOS element or an NMOS element, any core power supply circuit involving the power supply circuit described in this disclosure should fall within the protection scope of this disclosure.

[0088] It should be noted that the features disclosed in the power supply circuit provided in the above embodiments can be arbitrarily combined without conflict to obtain new power supply circuit embodiments.

[0089] Another embodiment of this disclosure provides a method for providing power supply voltage, applied to the power supply circuit provided in the above embodiments, to dynamically adjust the power supply voltage according to temperature.

[0090] Figure 10This is a flowchart illustrating the method for providing power supply voltage according to this embodiment. The following is a detailed description of the method for providing power supply voltage according to this embodiment, with reference to the accompanying drawings:

[0091] refer to Figure 10 Methods for providing power supply voltage include:

[0092] Step 401: Obtain the positive temperature coefficient voltage.

[0093] Specifically, a positive temperature coefficient voltage is obtained based on the power supply circuit after it is turned on, wherein the magnitude of the positive temperature coefficient voltage is positively correlated with the temperature. Specifically, combined with... Figure 1 As can be seen from the examples, the higher the temperature, the larger the voltage value of the positive temperature coefficient voltage, and the lower the temperature, the smaller the voltage value of the positive temperature coefficient voltage.

[0094] Step 402: Based on the comparison results of the positive temperature coefficient voltage and the temperature reference voltage, determine the method of providing the power supply voltage.

[0095] The voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at the preset temperature.

[0096] Specifically, if the positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the positive temperature coefficient voltage, and a power supply voltage is provided based on the temperature control voltage. If the positive temperature coefficient voltage is less than or equal to the temperature reference voltage, a power supply voltage is provided based on the first internal power supply voltage.

[0097] In some embodiments, the method for providing power supply voltage further includes: step 502, obtaining a second positive temperature coefficient voltage based on a positive temperature coefficient voltage, wherein step 402 includes: determining the method of providing power supply voltage based on a comparison result between the second positive temperature coefficient voltage and a temperature reference voltage.

[0098] The voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at the preset temperature.

[0099] Specifically, if the second positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the first positive temperature coefficient voltage, and a power supply voltage is provided based on the temperature control voltage. If the second positive temperature coefficient voltage is less than or equal to the temperature reference voltage, a power supply voltage is provided based on the first internal power supply voltage.

[0100] As can be seen from the preceding text, in specific applications, the temperature reference voltage of the judgment module 102 is generated based on the bandgap voltage. The bandgap voltage of a typical memory is 1.2V. The positive temperature coefficient voltage generated by the temperature sensing module 101 may be greater than 1.2V. In some embodiments, the positive temperature coefficient voltage includes a first positive temperature coefficient voltage and a second positive temperature coefficient voltage, and the voltage value of the first positive temperature coefficient voltage is greater than the voltage value of the second positive temperature coefficient voltage. Specifically, the voltage value of the positive temperature coefficient voltage is equal to the voltage value of the first positive temperature coefficient voltage, and the second positive temperature coefficient voltage is obtained by voltage division of the first positive temperature coefficient voltage. At this time, the judgment module 102 is configured to generate a drive signal based on the comparison structure of the temperature reference voltage and the second positive temperature coefficient voltage. The voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature. The second positive temperature coefficient voltage is obtained by voltage division of the first positive temperature coefficient voltage. Then, the second positive temperature coefficient voltage is compared with the temperature reference voltage to determine whether the current temperature is higher than the preset temperature. The voltage value of the second positive temperature coefficient voltage can be adjusted by the resistance value of the voltage divider resistor to make the voltage value of the second positive temperature coefficient voltage less than 1.2V, thereby simplifying the design of the judgment module 102.

[0101] It should be noted that the features disclosed in the power supply voltage provision method provided in the above embodiments can be arbitrarily combined without conflict to obtain new power supply voltage provision method embodiments.

[0102] Another embodiment of this disclosure provides a memory including the power supply circuit provided in the above embodiments. The power supply circuit provided in the above embodiments can provide a substrate voltage for a PMOS element to dynamically adjust the substrate voltage of the PMOS element with temperature, thereby reducing the channel leakage current and junction leakage current of the corresponding PMOS element and improving the performance of the PMOS element.

[0103] Specifically, for the power supply circuit, if the positive temperature coefficient voltage is greater than the temperature reference voltage (i.e., the current temperature of the PMOS device is higher than the preset temperature), the leakage current of the PMOS device increases significantly with increasing temperature. In this case, a power supply voltage is provided to the substrate of the PMOS device based on the temperature control voltage. The value of the temperature control voltage is the same as the value of the positive temperature coefficient voltage, and the magnitude of the positive temperature coefficient voltage increases with increasing temperature. This dynamically adjusts the substrate voltage of the PMOS device according to the temperature, thereby reducing the channel leakage current and junction leakage current of the PMOS device and improving its performance. If the temperature reference voltage is greater than the positive temperature coefficient voltage (i.e., the current temperature of the PMOS device is lower than the preset temperature), the power supply voltage is provided to the substrate of the PMOS device based on the temperature control voltage. Figure 1 As can be seen from the content, at this time, the leakage current of the PMOS element does not change significantly with the increase of temperature. The power supply voltage is directly provided to the substrate of the PMOS element based on the first internal power supply voltage, which does not affect the normal operation of the PMOS element and reduces the power consumption of the power supply circuit.

[0104] In some examples, memory can be a storage cell or device based on a semiconductor device or component. For example, a memory device can be volatile memory, such as Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM), Low Power Double Data Rate Synchronous Dynamic Random Access Memory (LPDDR SDRAM), Graphics Double Data Rate Synchronous Dynamic Random Access Memory (GDDR SDRAM), Double Data Rate Type Dual Synchronous Dynamic Random Access Memory (DDR2 SDRAM), Double Data Rate Type Triple Synchronous Dynamic Random Access Memory (DDR3 SDRAM), Double Data Rate Type Fourth Generation Synchronous Dynamic Random Access Memory (DDR4 SDRAM), Thyristor Random Access Memory (TRAM), etc.; or it can be non-volatile memory, such as Phase Change Random Access Memory (PRAM), Magnetic Random Access Memory (MRAM), Resistive Random Access Memory (RRAM), etc.

[0105] Those skilled in the art will understand that the above embodiments are specific embodiments for implementing the present disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of the present disclosure.

Claims

1. A power supply circuit, characterized in that, include: The temperature sensing module is configured to generate a positive temperature coefficient voltage based on a reference signal, wherein the magnitude of the positive temperature coefficient voltage is positively correlated with the magnitude of the temperature. The judgment module, connected to the temperature sensing module, is configured to generate a drive signal based on the comparison result of the temperature reference voltage and the positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature. A power supply module, connected to the judgment module and the temperature sensing module, is configured to determine, based on the drive signal, to provide a first internal power supply voltage or a temperature control voltage, wherein the voltage value of the temperature control voltage is the same as the voltage value of the positive temperature coefficient voltage. The temperature sensing module includes: The sensing unit is configured to generate a positive temperature coefficient voltage based on a reference signal; The generation unit, connected to the judgment module and the sensing unit, is driven by the driving signal and configured to generate the temperature control voltage based on the positive temperature coefficient voltage. The positive temperature coefficient voltage includes a first positive temperature coefficient voltage and a second positive temperature coefficient voltage, wherein the voltage value of the first positive temperature coefficient voltage is greater than the voltage value of the second positive temperature coefficient voltage. The judgment module is configured to generate a driving signal based on the comparison result of the temperature reference voltage and the second positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature.

2. The power supply circuit according to claim 1, characterized in that, The sensing unit includes: The first amplifier has a negative inverting input terminal used to receive the reference signal; The first PMOS transistor has its gate connected to the output terminal of the first amplifier, its source receiving the second internal power supply voltage, and its drain serving as the first output terminal to output the first positive temperature coefficient voltage. The voltage value of the second internal power supply voltage is greater than the voltage value of the first internal power supply voltage. The first voltage divider resistor has its first end connected to the first output terminal and its second end serving as the second output terminal to output the second positive temperature coefficient voltage. The second voltage divider resistor has its first end connected to the second output terminal and its second end connected to the non-inverting input terminal of the first amplifier. The temperature control sub-circuit is connected between the second end of the second voltage divider resistor and the ground terminal, and is used to adjust the current flowing through the temperature control sub-circuit according to the temperature change.

3. The power supply circuit according to claim 2, characterized in that, The sensing unit further includes: The first switching transistor has a gate for receiving an enable signal, a source for receiving the second internal power supply voltage, and a drain connected to the output of the first amplifier. The second switching transistor, whose gate is used to receive the enable signal, is connected in series between the temperature control sub-circuit and the ground terminal.

4. The power supply circuit according to claim 2, characterized in that, The temperature control sub-circuit includes: At least one second PMOS transistor, the source of each second PMOS transistor is connected to the second terminal of the second voltage divider resistor, the drain is shorted to the gate and coupled to the ground terminal.

5. The power supply circuit according to claim 4, characterized in that, The temperature control sub-circuit also includes: A gating circuit is provided between each of the second PMOS transistors and the second terminal of the second voltage divider resistor; The gating circuit is activated based on different selection signals.

6. The power supply circuit according to claim 5, characterized in that, The channel width-to-length ratios of the different second PMOS transistors are not the same.

7. The power supply circuit according to claim 1, characterized in that, The judgment module includes: a comparator, one input terminal for receiving the temperature reference voltage, another input terminal for receiving the positive temperature coefficient voltage, and an output terminal for outputting the drive signal.

8. A power supply circuit, characterized in that, include: The temperature sensing module is configured to generate a positive temperature coefficient voltage based on a reference signal, wherein the magnitude of the positive temperature coefficient voltage is positively correlated with the magnitude of the temperature. The judgment module, connected to the temperature sensing module, is configured to generate a drive signal based on the comparison result of the temperature reference voltage and the positive temperature coefficient voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature. A power supply module, connected to the judgment module and the temperature sensing module, is configured to determine, based on the drive signal, to provide a first internal power supply voltage or a temperature control voltage, wherein the voltage value of the temperature control voltage is the same as the voltage value of the positive temperature coefficient voltage. The temperature sensing module includes: The sensing unit is configured to generate a positive temperature coefficient voltage based on a reference signal; The generation unit, connected to the judgment module and the sensing unit, is driven by the driving signal and configured to generate the temperature control voltage based on the positive temperature coefficient voltage. The generation unit includes: The negative phase input terminal of the second amplifier is used to receive the positive temperature coefficient voltage. The third PMOS transistor has its gate connected to the output terminal of the second amplifier, its source receiving the second internal power supply voltage, and its drain connected to the non-inverting input terminal of the second amplifier. The drain of the third PMOS transistor is also connected to the first end of the load resistor for outputting the temperature control voltage; The second end of the load resistor is connected to the ground terminal.

9. The power supply circuit according to claim 8, characterized in that, The generation unit further includes: The third switching transistor has a gate for receiving the drive signal, a source for receiving the second internal power supply voltage, and a drain connected to the output of the second amplifier. A fourth switching transistor is connected in series between the second terminal of the load resistor and the ground terminal, and its gate receives the drive signal.

10. The power supply circuit according to claim 1 or 8, characterized in that, The preset temperature is 50℃.

11. A method for providing a power supply voltage, applied to a power supply circuit according to any one of claims 1 to 10, characterized in that, include: Obtain the positive temperature coefficient voltage; Based on the comparison result of the positive temperature coefficient voltage and the temperature reference voltage, the method of providing power supply voltage is determined, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at a preset temperature; Wherein, if the positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the positive temperature coefficient voltage, and the power supply voltage is provided based on the temperature control voltage; if the positive temperature coefficient voltage is less than or equal to the temperature reference voltage, the power supply voltage is provided based on the first internal power supply voltage. Also includes: The first positive temperature coefficient voltage and the second positive temperature coefficient voltage are obtained based on the positive temperature coefficient voltage; The method of determining the supply voltage based on the comparison result of the positive temperature coefficient voltage and the temperature reference voltage includes: determining the method of supplying the power supply voltage based on the comparison result of the second positive temperature coefficient voltage and the temperature reference voltage, wherein the voltage value of the temperature reference voltage is the same as the voltage value of the second positive temperature coefficient voltage at a preset temperature; If the second positive temperature coefficient voltage is greater than the temperature reference voltage, a temperature control voltage is generated based on the first positive temperature coefficient voltage, and the power supply voltage is provided based on the temperature control voltage. If the second positive temperature coefficient voltage is less than or equal to the temperature reference voltage, the power supply voltage is provided based on the first internal power supply voltage.

12. A memory, characterized in that, Includes the power supply circuit as described in any one of claims 1 to 10.

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