A super junction IGBT device and a manufacturing method thereof

Abstract

The application provides a super-junction IGBT device and a manufacturing method thereof, and a specific technical scheme is as follows: the application connects the positive forward conduction current path, the off hole extraction path and the separation of the super-junction IGBT through a P column region, and connects the front P type region with the second P column region, so that a longitudinal PNP structure is formed, the super-junction IGBT structure can be opened under the strong collector-emitter voltage of the short-circuit device, and the short-circuit current discharge channel of the super-junction IGBT structure can be formed through the bipolar transistor. The application provides the super-junction IGBT with innovation and practicability, the electron injection enhancement structure and the off hole extraction path are optimized, and the compromise of the conduction performance, the switching characteristic and the short-circuit capability of the super-junction IGBT is significantly improved.

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