A broadband / high-isolation / low-cross-polarization dual-polarized antenna array
By designing a five-layer dielectric substrate structure and a differential feed network, a wideband, high-isolation, and low-cross-polarization dual-polarization antenna array was realized, solving the problems of narrow bandwidth, poor cross-polarization, and low isolation in the existing technology, and improving the performance of the array.
Patent Information
- Application Number
- CN202410084344.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-19
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2044-01-19
AI Technical Summary
Existing millimeter-wave dual-polarized antenna arrays suffer from narrow bandwidth, poor cross-polarization characteristics, and low isolation. Furthermore, existing designs are complex, costly, and difficult to manufacture.
A five-layer dielectric substrate structure is adopted, which combines a microstrip power divider, SIW cavity and coupling slot. A high-order mode differential feed network is introduced by using a common coupling/direct feed method. Broadband, low cross polarization and high isolation are achieved through the common coupling/direct feed radiating unit and differential power divider.
It achieves an impedance matching bandwidth of over 42.4%, a 3dB gain bandwidth of 34.3%, a cross-polarization ratio of less than -30dB, and a high isolation of over 29dB, solving the problems of narrow bandwidth, poor cross-polarization, and low isolation.
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Figure CN117913546B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of antennas, and discloses a broadband / high-isolation / low-cross-polarization dual-polarization antenna array. BACKGROUND
[0002] In recent years, with the continuous development of 5G communication technology, millimeter wave communication has been widely concerned by people. In a millimeter wave communication system, a dual-polarization antenna array is an important antenna form, and by using such an antenna, the channel capacity of the system can be effectively improved, and the multipath fading of electromagnetic waves can be reduced, and therefore, the millimeter wave dual-polarization antenna array is a direction worthy of research and has extremely high application value.
[0003] At present, many related designs have been reported in public documents, such as documents [1]-[4]. Common radiation units include dipole [1][2] , patch [3] or a combination of the two structures [4] , and the feed network part is mostly of the substrate integrated waveguide (SIW) type [1][3][4] or the microstrip line type [2] . In view of the current technical status, there are still some deficiencies in the millimeter wave dual-polarization antenna array. First, the bandwidth of the antenna array in the currently reported schemes is generally narrow, and it is generally difficult to exceed 30%, and only a few designs can break through this bandwidth range [2] , but are limited to 2x2 or 4x4 array size. As we know, in an antenna array, the bandwidth of the array is inversely proportional to the array size, and due to the multiple reflections of electromagnetic waves in the feed network and the strong coupling between the array units and other factors, the larger the array, the narrower the bandwidth; second, the cross-polarization characteristic is also a key indicator of dual-polarization antennas, which directly determines the polarization purity of the antenna and the communication quality of the entire system. In the reported documents, most of the schemes can only achieve-15dB or worse cross-polarization; in addition, since there are two feed ports in the dual-polarization antenna, the port isolation is also an important consideration in the design of such antennas. The current reported schemes mostly isolate the two polarized feed networks, such as using a waveguide structure dual-polarization feed network or using a metal floor isolation, although these schemes can effectively improve the isolation parameter, but there are also problems of large volume, complex design, difficult processing, high cost, etc. The isolation in the reported schemes is generally about 20dB, and the isolation is low.
[0004] [1] W. Zhao, X. Li, Z. Qi, and H. Zhu, "Broadband and High-Gain Dual-Polarized Antenna Array With Shared Vias Feeding Network for 5G Applications," IEEE Antennas Wireless Propag. Lett., vol. 20, no. 12, pp. 2377-2381, Dec. 2021.
[0005] [2] Y. Li, C. Wang, and Y. X. Guo, "A Ka-Band Wideband Dual-Polarized Magnetoelectric Dipole Antenna Array on LTCC," IEEE Trans. Antennas Propag., vol. 68, no. 6, pp. 4985-4990, June. 2020.
[0006] [3] Q. Yang, S. Gao, Q. Luo, L. Wen, X. Ren, J. Wu, Y.-L. Ban, and X.-X. Yang, "A Dual-Polarized Planar Antenna Array Differentially-Fed by Orthomode Transducer," IEEE Trans. Antennas Propag., vol. 69, no. 5, pp. 2637-2647, May 2021.
[0007] [4] M. Wang, and C. H. Chan, "Dual-Polarized, Low-Profile Dipole-Patch Array for Wide Bandwidth Applications," IEEE Trans. Antennas Propag., vol. 70, no. 9, pp. 8030-8039, Sept. 2022. SUMMARY
[0008] To at least solve one of the problems existing in the prior art, the present application provides a wideband, high-isolation, low-cross-polarization dual-polarized antenna array.
[0009] In order to achieve the object of the present application, the present application provides a broadband / high-isolation / low-cross-polarization dual-polarization antenna array, comprising five dielectric plates, both sides of each dielectric plate are provided with a metal layer, the five dielectric plates are defined as a first dielectric plate, a second dielectric plate, a third dielectric plate, a fourth dielectric plate and a fifth dielectric plate, the metal layers are defined as a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, a fifth metal layer and a sixth metal layer from the first dielectric plate to the fifth dielectric plate, wherein,
[0010] The first metal layer and the second metal layer are respectively provided with two microstrip line power dividers excited by different ports, and the microstrip lines at the ends of the two microstrip line power dividers are orthogonal;
[0011] A plurality of cross-shaped coupling slots are arranged on the third metal layer, and the ends of the two microstrip line power dividers cross the cross-shaped coupling slots;
[0012] A SIW cavity equal in number to the cross-shaped coupling slots is arranged on the third dielectric plate, and each cross-shaped coupling slot is located in the SIW cavity;
[0013] On the fourth metal layer, x-polarization coupling slots and y-polarization coupling slots that are orthogonal to each other are arranged at positions corresponding to the inner edges of each SIW cavity;
[0014] A cavity surrounded by a metal through hole and a direct feed metal through hole are arranged on the fourth dielectric plate;
[0015] The fifth metal layer is further provided with an x-polarization feed line and a y-polarization feed line that is orthogonal to the x-polarization feed line, and the x-polarization feed line crosses the x-polarization coupling slots and the y-polarization feed line crosses the y-polarization coupling slots;
[0016] A cavity and a metal through hole for connecting the fifth metal layer and the sixth metal layer are arranged on the fifth dielectric plate;
[0017] The sixth metal layer is further provided with a cross-shaped microstrip line structure at a position corresponding to each SIW cavity.
[0018] Further, the microstrip line power divider arranged on the first metal layer is defined as a first microstrip line power divider, and the microstrip line power divider arranged on the second metal layer is defined as a second microstrip line power divider, and the first-stage power divider of the second microstrip line power divider outputs a differential signal.
[0019] Further, the cavity is rectangular.
[0020] Further, each cross-shaped coupling slot is located at a central position of the SIW cavity.
[0021] Further, the x-polarization coupling slots and the y-polarization coupling slots are both rectangular.
[0022] Further, the cross-shaped microstrip line structure comprises an x-polarized radiation microstrip line and a y-polarized radiation microstrip line orthogonal thereto.
[0023] Further, the x-polarized radiation microstrip line and the y-polarized radiation microstrip line orthogonal thereto are an integral structure.
[0024] Further, 16 cross-shaped coupling slots are arranged on the third metal layer in a 4*4 arrangement, 16 SIW cavities arranged in a 4*4 arrangement are arranged on the third dielectric plate 23, x-polarized coupling slots and y-polarized coupling slots arranged in an 8*8 arrangement are arranged on the fourth metal layer, and 64 x-polarized radiation microstrip lines and y-polarized radiation microstrip lines orthogonal thereto arranged in an 8*8 arrangement are arranged on the sixth metal layer.
[0025] Further, both microstrip line power dividers are four-stage power dividers each dividing into sixteen.
[0026] Further, the direct-fed metal through holes are connected by the microstrip lines arranged on the fifth metal layer to form an equipotential body.
[0027] Compared with the prior art, the present application has the following advantages:
[0028] (1) The present application discloses a broadband monopole radiation unit shared by coupling / direct feeding, the unit structure adopts a coupling / direct feeding shared feeding mode, a very wide unit bandwidth is obtained, and in addition to a broadband power divider, the entire array realizes an impedance matching bandwidth of more than 42.4% and a 3dB gain bandwidth of more than 34.3%, thereby solving the problem of narrow bandwidth of a dual-polarized antenna array.
[0029] (2) The high-order mode of the waveguide is utilized to realize differential feeding, so that a cross-polarization ratio of less than -30dB is obtained when two ports are respectively excited, and low cross-polarization is realized.
[0030] (3) The differential mode of the microstrip line power divider makes the coupling currents cancel each other out, thereby solving the coupling problem between two polarization feeding networks, and further realizing high isolation, so that the array realizes high isolation of more than 29dB. BRIEF DESCRIPTION OF DRAWINGS
[0031] Figure 1 is a structure schematic diagram of a broadband / high-isolation / low-cross-polarization dual-polarized antenna array provided by an embodiment of the present application.
[0032] Figure 2 is an exploded schematic diagram of a broadband / high-isolation / low-cross-polarization dual-polarized antenna array provided by an embodiment of the present application.
[0033] Figure 3 is a top view of a first dielectric plate and first and second metal layers in an embodiment of the present application.
[0034] Figure 4 is a top view of the second dielectric plate and the second metal layer and the third metal layer in the embodiment of the present application.
[0035] Figure 5 is a top view of the third dielectric plate and the third metal layer and the fourth metal layer in the embodiment of the present application.
[0036] Figure 6 is a top view of the fourth dielectric plate and the fourth metal layer and the fifth metal layer in the embodiment of the present application.
[0037] Figure 7 is a top view of the fifth dielectric plate and the fifth metal layer and the sixth metal layer in the embodiment of the present application.
[0038] Figure 8 is a structural schematic diagram of the radiation unit in the embodiment of the present application.
[0039] Figure 9 is a structural schematic diagram of the traditional radiation unit.
[0040] Figure 10 is a comparison diagram of the input impedance and the imaginary part of the input impedance of the traditional radiation unit and the radiation unit provided by the embodiment of the present application. 11
[0041] Figure 11 is a principle diagram of the feed network.
[0042] Figure 12 is a comparison diagram of the antenna array isolation of the non-differential scheme and the differential scheme adopted by the present application.
[0043] Figure 13 is an impedance bandwidth diagram of the antenna array in the embodiment of the present application.
[0044] Figure 14 is an E-plane (x-z plane) and H-plane (y-z) pattern at the center frequency 33 GHz when excited from port 1.
[0045] Figure 15 is an E-plane (x-z plane) and H-plane (y-z) pattern at the center frequency 33 GHz when excited from port 2.
[0046] Figure 16 is a cross-polarization ratio diagram of the antenna array in the embodiment of the present application.
[0047] Figure 17 is a gain characteristic diagram of the antenna array in the embodiment of the present application. DETAILED DESCRIPTION
[0048] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present application.
[0049] The present application provides a broadband, high isolation, low cross-polarization dual-polarized antenna array, whose overall view and exploded view are shown in Figure 1 and Figure 2 The coordinate system is established as follows: the x-axis and y-axis of the rectangular coordinate system are parallel to the two rectangular sides of the PCB board, and the maximum radiation direction of the array points to the z-axis. The entire antenna array includes five dielectric boards and six metal layers, which are a first dielectric board 21, a second dielectric board 22, a third dielectric board 23, a fourth dielectric board 24 and a fifth dielectric board 25. In some embodiments of the present application, the dielectric boards are PCB boards, and the PCB board materials used are Rogers 5880, with a dielectric constant of 2.2, a loss tangent angle of 0.0009, a size of 59*54mm, and thicknesses of the first dielectric board to the fifth dielectric board being 0.127mm, 0.127mm, 0.254mm, 0.254mm and 1.575mm respectively. The metal layers include six layers, which are a first metal layer 26, a second metal layer 27, a third metal layer 28, a fourth metal layer 29, a fifth metal layer 30 and a sixth metal layer 31.
[0050] The top view of the first dielectric board 21 and the first metal layer 26 and the second metal layer 27 is shown in Figure 3 In some embodiments of the present application, the first metal layer 26 is provided with a first microstrip line power divider 32 excited by port 1, the second metal layer 27 is provided with a second microstrip line power divider 33 excited by port 2, and the microstrip line ends of the two power dividers are orthogonal. In some embodiments of the present application, the first microstrip line power divider 32 and the second microstrip line power divider 33 are both four-stage power dividers with one-sixteenth division. The first-stage power divider of the second microstrip line power divider 33 outputs a differential signal, that is, compared with the first microstrip line power divider 32, the length difference of the two output lines of the second microstrip line power divider 33 is L, and the phase difference of the signals is 180 degrees.
[0051] The top view of the second dielectric board 22 and the second metal layer 27 and the third metal layer 28 is shown in Figure 4 In some embodiments of the present application, the third metal layer 28 is provided with 16 cross-shaped coupling slots 41 arranged in 4*4, and the ends of the first microstrip line power divider 32 and the second microstrip line power divider 33 cross the cross-shaped coupling slots 41.
[0052] The top view of the third dielectric plate 23 and the third metal layer 28 and the fourth metal layer 29 is shown in FIG. 3. In some embodiments of the present application, 16 SIW cavities 51 are arranged in a 4x4 array on the third dielectric plate 23, and each cross-shaped coupling slot 41 is located at the center of a corresponding SIW cavity 51. Two groups of rectangular x-polarized coupling slots 52 and rectangular y-polarized coupling slots 53 are arranged in an 8x8 array on the fourth metal layer 29, and the x-polarized coupling slots 52 and the y-polarized coupling slots 53 are located at the edges of the SIW cavities 51 and arranged orthogonally to each other. Figure 5 The top view of the fourth dielectric plate 24 and the fourth metal layer 29 and the fifth metal layer 30 is shown in FIG. 4. In some embodiments of the present application, a rectangular cavity 61 surrounded by metal vias and a direct-fed metal via 64 are arranged on the fourth dielectric plate 24, and each SIW cavity is located in the rectangular cavity 61. The direct-fed metal via 64 is connected by a microstrip line on the fifth metal layer 30 to form an equalizer. An x-polarized feed line 62 and a y-polarized feed line 63 orthogonal to the x-polarized feed line 62 are arranged on the fifth metal layer 30, wherein the x-polarized feed line 62 crosses the x-polarized coupling slots 52, and the y-polarized feed line 63 crosses the y-polarized coupling slots 53.
[0053] Figure 6 The top view of the fifth dielectric plate 25 and the fifth metal layer 30 and the sixth metal layer 31 is shown in FIG. 5. In some embodiments of the present application, a rectangular cavity 61 is also arranged on the fifth dielectric plate 25, and metal vias 71 are arranged for connecting the fifth metal layer 30 and the sixth metal layer 31. Sixty-four x-polarized radiation microstrip lines 72 arranged in an 8x8 array and y-polarized radiation microstrip lines 73 orthogonal to the x-polarized radiation microstrip lines 72 are arranged on the sixth metal layer 31, wherein the x-polarized radiation microstrip lines 72 and the y-polarized radiation microstrip lines 73 form a cross-shaped microstrip line structure as a whole.
[0054] The top view of the fifth dielectric plate 25 and the fifth metal layer 30 and the sixth metal layer 31 is shown in FIG. 5. In some embodiments of the present application, a rectangular cavity 61 is also arranged on the fifth dielectric plate 25, and metal vias 71 are arranged for connecting the fifth metal layer 30 and the sixth metal layer 31. Sixty-four x-polarized radiation microstrip lines 72 arranged in an 8x8 array and y-polarized radiation microstrip lines 73 orthogonal to the x-polarized radiation microstrip lines 72 are arranged on the sixth metal layer 31, wherein the x-polarized radiation microstrip lines 72 and the y-polarized radiation microstrip lines 73 form a cross-shaped microstrip line structure as a whole. Figure 7 In terms of working principle, first, a single monopole (y-polarized) radiation unit is taken as an example to explain the broadband principle. The unit structure is shown in FIG. 6.
[0055] When electromagnetic waves are excited through the wave port, the y-polarized radiation microstrip line 73 composed of the single monopole will be fed through two ways, i.e., coupling feed formed by the y-polarized coupling slots 53 and direct-fed feed formed by the direct-fed metal via 64, the y-polarized feed line 63, and the metal via 71. In the traditional technical solution, the energy transmission from the waveguide to the microstrip line is generally realized through pure coupling. Here, the present technical solution is compared with the traditional solution. The unit structure of the traditional solution is shown in FIG. 7. Figure 8 Figure 9 As shown, electromagnetic energy is input from the wave port of the same size, then coupled to the y-polarization feed line 63 through the y-polarization coupling slot 53, and then transmitted to the subsequent radiation structure, and because of the lack of straight feed metal through hole 64, the energy transmitted from the y-polarization coupling slot 53 to the y-polarization feed line 63 only has a coupled feeding mode. The |S 11 of the input impedance and the imaginary part (Im[Z 11 ]) of the input impedance are compared Figure 10 As shown, it can be seen that the imaginary parts of both are close to 0Ω in the high-frequency band, but in the low-frequency band, the imaginary part of the structure using coupled feeding is strongly capacitive, which leads to poor impedance matching effect in the low-frequency band, thereby affecting the antenna bandwidth. To solve this problem, the present application introduces inductance by adding a straight feed metal through hole 64 to offset the strong capacitive effect in the low-frequency band. By Figure 10 It can be seen that the imaginary part of the structure using coupled / straight feed sharing is close to 0Ω in the entire frequency band, which shows that this scheme is feasible and can make the unit structure obtain a wider impedance bandwidth. Since the structure of the dual-polarized antenna is completely symmetrical in two polarization directions, the wideband principle explained here for single polarization (y polarization) is also applicable to the other polarization (x polarization).
[0056] Secondly, for the low cross-polarization principle, the single polarization (y polarization) is also taken as an example for explanation. The 8x8 array in the embodiment can be decomposed into 16 2x2 sub-arrays, that is, each SIW cavity 51 constitutes a 2x2 sub-array. When the antenna works in the y polarization state, the working mode of the SIW cavity 51 is a high-order TE 22 mode, which has a natural differential characteristic, and two adjacent units along the y axis are mirror arranged, so two adjacent units constitute a differential antenna, and the main polarization energy radiated by them to the atmosphere is superimposed on each other, and the cross-polarization energy is cancelled out, thereby realizing the low cross-polarization characteristic.
[0057] In addition, the present application proposes a scheme of using a differential feeding network to improve the port isolation of the dual-polarized antenna array, and the specific method is to use a differential power divider at the first stage of the feeding network of one polarization, and the working principle can be explained as follows Figure 11It is illustrated that most of the energy will be transmitted to the radiating elements via the power divider 1 where port 1 is located and then radiated to the atmosphere, while a small amount of electromagnetic energy will be coupled at the end of the two power dividers (cross-over). Then the coupled current will be transmitted to port 2 along the two microstrip lines of the power divider 2. Since the power divider 2 is in differential form, when the two coupled currents converge to port 2, the opposite phase will be cancelled, thereby improving the isolation. Since the entire feed network has the property of reciprocity, the effect is the same when the signal is fed by port 2 as when it is fed by port 1. To verify this method, we compared the isolation of the antenna array with and without the differential scheme, as shown in Figure 12 It can be seen from the figure that the port isolation can be improved to a level higher than 30 dB after adopting the differential scheme provided by the present application, which is improved by more than 10 dB compared with the result without adopting the differential scheme.
[0058] The entire antenna array adopts the form of microstrip line back feeding, so the 2x2 subarray can share the electric wall surrounded by the metal through holes with the adjacent subarray, thereby reducing the array size. Finally, two one-to-sixteen microstrip line power dividers are used to feed these subarrays, forming a compactly arranged 8x8 dual-polarized antenna array. The rectangular cavity 61 surrounded by the metal through holes located at the periphery of the antenna array serves to suppress surface waves and improve the gain.
[0059] The impedance bandwidth of the antenna array is shown in Figure 13 The -10 dB impedance bandwidths of the two ports are both more than 42.4% (26-40 GHz), which can cover the entire Ka band (26.5-40 GHz), and have very wide impedance bandwidth, which is much better than the current technical level. Figure 14 and Figure 15 are the E-plane (x-z plane) and H-plane (y-z) patterns at the center frequency 33 GHz when excited by port 1 and port 2 respectively, it can be seen that both have very low cross-polarization, and the sidelobe level is lower than -10 dB. The cross-polarization ratio is shown in Figure 16 When port 1 and port 2 are excited respectively, the cross-polarization ratio is less than -32.4 and -28.57 dB respectively. Figure 17 As shown in
[0060] In summary, the application provides a millimeter wave dual-polarized antenna array, which has the advantages of wide bandwidth, low cross-polarization and high isolation.
[0061] The foregoing embodiments of the application provide an 8x8 dual-polarized antenna array with wide bandwidth, high isolation and low cross-polarization. First, a single-pole radiation unit is proposed, which is coupled / straight-fed shared. The unit introduces inductive components in the low frequency band by adding straight-fed holes to offset the excessively high capacitive input impedance, thereby expanding the operating bandwidth of the unit. Second, the high-order mode of the waveguide is used to form a differential feed network, and the adjacent units are arranged in mirror image, thereby obtaining a 2x2 subarray with low cross-polarization. Then, a one-to-sixteen microstrip line power divider is used to feed these 2x2 subarrays. The back-fed form of the microstrip line allows these subarrays to be arranged compactly, thereby reducing the array size and improving the aperture efficiency. At the same time, the microstrip line power divider is arranged in mirror image and uses differential circuits to make the coupling currents on the microstrip line cancel each other out, thereby preventing them from flowing into the feed port of the other polarization, thereby improving the isolation.
[0062] The above description of disclosed embodiments enables one skilled in the art to make or use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A dual-polarized antenna array, characterized by, The five-layer dielectric plate is provided with metal layers on both sides of each layer, and the five-layer dielectric plate is defined as a first dielectric plate, a second dielectric plate, a third dielectric plate, a fourth dielectric plate and a fifth dielectric plate from bottom to top, and the metal layers are defined as a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, a fifth metal layer and a sixth metal layer from the first dielectric plate to the fifth dielectric plate, wherein, The first metal layer and the second metal layer are respectively provided with two microstrip line power dividers excited by different ports, and the microstrip lines at the ends of the two microstrip line power dividers are orthogonal; A plurality of cross-shaped coupling slots are arranged on the third metal layer, and the ends of the two microstrip line power dividers cross the cross-shaped coupling slots; A plurality of SIW cavities equal in number to the cross-shaped coupling slots are arranged on the third dielectric plate, and each cross-shaped coupling slot is located in a corresponding SIW cavity; X-polarized coupling slots and y-polarized coupling slots that are orthogonal to each other are arranged on the fourth metal layer at positions corresponding to the inner edges of each SIW cavity; A cavity surrounded by metal through holes and a direct feeding metal through hole are arranged on the fourth dielectric plate, and each SIW cavity is located in the cavity; X-polarized feed lines and y-polarized feed lines that are orthogonal to the x-polarized feed lines are further arranged on the fifth metal layer, and the x-polarized feed lines cross the x-polarized coupling slots, and the y-polarized feed lines cross the y-polarized coupling slots; A cavity and a metal through hole for jointly connecting the fifth metal layer and the sixth metal layer are arranged on the fifth dielectric plate, and each SIW cavity is located in the cavity; Cross-shaped microstrip line structures are arranged on the sixth metal layer at positions corresponding to each SIW cavity; The y-polarized coupling slots and the x-polarized coupling slots form coupled feed, and the direct feeding metal through hole, the x-polarized feed lines, the y-polarized feed lines and the metal through holes on the fifth dielectric plate form direct feed.
2. The dual-polarized antenna array of claim 1, wherein, The microstrip line power divider arranged on the first metal layer is defined as a first microstrip line power divider, and the microstrip line power divider arranged on the second metal layer is defined as a second microstrip line power divider, and a first-stage power divider of the second microstrip line power divider outputs a differential signal.
3. The dual-polarized antenna array of claim 1, wherein, The cavities on the fourth dielectric plate and the fifth dielectric plate are both rectangular.
4. The dual-polarized antenna array of claim 1, wherein, Each cross-shaped coupling slot is located at a central position of a corresponding SIW cavity.
5. The dual-polarized antenna array of claim 1, wherein, The x-polarized coupling slots and the y-polarized coupling slots are both rectangular.
6. The dual-polarized antenna array of claim 1, wherein, The cross-shaped microstrip line structure includes x-polarized radiation microstrip lines and y-polarized radiation microstrip lines that are orthogonal to the x-polarized radiation microstrip lines.
7. The dual-polarized antenna array of claim 6, wherein, The x-polarized radiation microstrip lines and the y-polarized radiation microstrip lines that are orthogonal to the x-polarized radiation microstrip lines are an integral structure.
8. The dual-polarized antenna array of claim 1, wherein, The third metal layer is provided with 16 cross-shaped coupling slots arranged in a 4×4 array, the third dielectric plate is provided with 16 SIW cavities arranged in a 4×4 array, the fourth metal layer is provided with x-polarized coupling slots and y-polarized coupling slots arranged in an 8×8 array, and the sixth metal layer is provided with 64 x-polarized radiation microstrip lines and y-polarized radiation microstrip lines that are orthogonal to the x-polarized radiation microstrip lines arranged in an 8×8 array.
9. The dual-polarized antenna array of claim 8, wherein, The two microstrip line power dividers are both four-stage power dividers that divide into sixteen.
10. The dual-polarized antenna array of any of Claims 1-9, wherein, The direct feeding metal through holes are connected by microstrip lines arranged on the fifth metal layer to form an equipotential body.
Citation Information
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