Preparation method of multi-interface coupled indium phosphide quantum dots and electroluminescent diode

By using a one-step continuous synthesis method for multi-interface coupled InP/ZnSe/ZnS quantum dots, the difficulties in synthesizing InP quantum dots and their application in electroluminescent diodes have been solved, achieving efficient and stable electroluminescence effects, simplifying the process and reducing costs.

CN118027974BActive Publication Date: 2025-12-30UNIV OF SCI & TECH BEIJING +1
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Patent Information

Application Number
CN202410152085.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-02-03
Publication Date
2025-12-30
Estimated Expiration
2044-02-03

AI Technical Summary

Technical Problem

The synthesis of InP quantum dots is difficult, costly, and involves flammable and explosive raw materials and complex processes, and their application in electroluminescent diodes presents challenges.

Method used

A one-step continuous synthesis method for multi-interface coupled core-shell InP/ZnSe/ZnS quantum dots was adopted. By controlling the reaction conditions and using safe aminophosphine as the phosphorus source, combined with oleylamine as the ligand, high-quality quantum dots were prepared and applied in electroluminescent diodes.

Benefits of technology

This invention achieves high fluorescence quantum yield, high external quantum efficiency, and good stability in electroluminescent diodes, simplifying the synthesis process, reducing costs, and making them suitable for mass production.

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Abstract

The application relates to a preparation method of a multi-interface coupling indium phosphide quantum dot and an electroluminescent diode, and belongs to the field of semiconductor light emission, display and nanotechnology. In the application, tri (dimethylamino) phosphine is reacted with an indium halide oleylamine solvent at 160 DEG C to 200 DEG C to generate an indium phosphide nanocrystal core, then the temperature is increased to 300 DEG C to 350 DEG C, zinc oleate, tri-n-octylphosphine-selenium and tri-n-octylphosphine-sulfur are gradually injected, and a polar solvent and a crosslinking agent are injected; 3-5 quantum dots are high-temperature fused through interfaces to realize interface coupling, and a multi-interface coupling core-shell indium phosphide / zinc selenide / zinc sulfide quantum dot is obtained. The quantum dot has a unique coupling structure, can effectively inhibit photo-generated exciton Auger recombination, improve the charge transport performance of a quantum dot film, has higher stability and a higher fluorescence quantum yield, and can be used for preparing a high-efficiency electroluminescent diode with high tube efficiency and good working stability.
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