A display panel and display device

Abstract

The application discloses a display panel and a display device, the display panel comprising a driving substrate, a light emitting element and a curing layer, the light emitting element being located on one side of the driving substrate; the light emitting element comprising a first type semiconductor, a light emitting layer and a second type semiconductor arranged along a first direction; the first type semiconductor comprising a first groove on the side away from the light emitting layer, the second type semiconductor comprising a second groove on the side away from the light emitting layer, and the first groove and the second groove at least partially overlapping along the first direction; by arranging a plurality of grooves on the upper and lower semiconductor layers of the light emitting element, the grooves have overlapping areas along the longitudinal direction; the grooves and the overlapping areas are used to improve the light transmittance of the light emitting element, improve the curing degree of the curing layer material at the bottom of the light emitting element, thereby improving the bonding strength of the light emitting device and the reliability of the whole device, and also reducing the risk of separation and falling of the curing layer from the bottom of the light emitting element, so as to improve the display effect of the display panel.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of display, in particular to a display panel and a display device. BACKGROUND

[0002] In recent years, in the LED (Light Emitting Diode, LED) display panel, the LED light emitting device gradually realizes product mass production in the fields of AR (Augmented Reality, AR) / VR (Virtual Reality, VR) and next-generation display, etc. due to its long service life, high contrast, fast response speed and other advantages. However, there are still many problems such as overall device reliability risks in LED mass transfer, which affect the display effect of the display panel. SUMMARY

[0003] The present application provides a display panel and a display device, by slotting the semiconductor layer of the light emitting device, increasing the light transmittance of the light emitting device to light, improving the curing degree of the material at the bottom of the light emitting device, thereby improving the reliability and ensuring the display effect of the display panel.

[0004] In a first aspect, embodiments of the present application provide a display panel, comprising:

[0005] a driving substrate;

[0006] a light emitting element located on one side of the driving substrate; the light emitting element comprises a first type semiconductor, a light emitting layer and a second type semiconductor arranged along a first direction; the first type semiconductor away from one side of the light emitting layer comprises a first groove, and the second type semiconductor away from one side of the light emitting layer comprises a second groove, and the first groove and the second groove at least partially overlap along the first direction;

[0007] a curing layer, the curing layer is located on the same side of the driving substrate as the light emitting element, and the curing layer comprises a first part overlapping the light emitting element, and the first part is located on the side of the light emitting element close to the driving substrate;

[0008] wherein the first direction is perpendicular to the plane where the driving substrate is located.

[0009] In a second aspect, embodiments of the present application further provide a preparation method of a display panel, for preparing the display panel provided in the first aspect, and the preparation method comprises:

[0010] providing a driving substrate;

[0011] Preparation of a light emitting element, the light emitting element comprising a first type semiconductor, a light emitting layer and a second type semiconductor arranged in a stack along a first direction; the first type semiconductor comprising a first recess on a side away from the light emitting layer, the second type semiconductor comprising a second recess on a side away from the light emitting layer, the first recess and the second recess at least partially overlapping along the first direction;

[0012] Transferring the light emitting element to a side of the driving substrate;

[0013] Depositing a curing layer on a surface of the driving substrate where the light emitting element is located, and curing the curing layer; wherein the curing layer comprises a first portion overlapping the light emitting element, the first portion being located on a side of the light emitting element close to the driving substrate.

[0014] In a third aspect, an embodiment of the present application further provides a display device, comprising the display panel provided in the first aspect.

[0015] The display panel provided by the embodiment of the present application comprises a driving substrate, a light emitting element and a curing layer, and the light emitting element is located on a side of the driving substrate. The light emitting element comprises a first type semiconductor, a light emitting layer and a second type semiconductor arranged in a stack along a first direction. The first type semiconductor comprises a first recess on a side away from the light emitting layer, and the second type semiconductor comprises a second recess on a side away from the light emitting layer. The first recess and the second recess at least partially overlap along the first direction. By arranging a plurality of recesses on the upper and lower semiconductor layers of the light emitting element, the recesses have an overlapping area along the longitudinal direction. The light transmittance of the light emitting element is improved by using the recesses and the overlapping area, the curing degree of the curing layer material at the bottom of the light emitting element is improved, thereby improving the bonding strength of the light emitting device and the reliability of the whole device. The risk of separation and falling off of the curing layer from the bottom of the light emitting element is also reduced, and the display effect of the display panel is improved. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a structural schematic diagram of a display panel provided by the related art;

[0017] Figure 2 is a top view schematic diagram of a display panel provided by an embodiment of the present application;

[0018] Figure 3 is Figure 2 is a sectional view schematic diagram of a display panel along AA' direction in

[0019] Figure 4 is Figure 2 is a sectional view schematic diagram of another display panel along AA' direction in

[0020] Figure 5 is Figure 2A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0021] Figure 6 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0022] Figure 7 This is a top view of a light-emitting element provided in an embodiment of this application;

[0023] Figure 8 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0024] Figure 9 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0025] Figure 10 It is a test graph showing the light transmittance of light-emitting elements with different emitting colors;

[0026] Figure 11 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0027] Figure 12 This is a top view schematic diagram of another display panel provided in an embodiment of the present invention;

[0028] Figure 13 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0029] Figure 14 This is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of this application;

[0030] Figure 15 This is a schematic diagram of the structure of a display device provided in an embodiment of the present invention. Detailed Implementation

[0031] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the invention and not all structures. Various modifications and variations can be made to the present invention without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, the present invention is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in the present invention can be combined with each other without contradiction.

[0032] Figure 1 is a structural schematic diagram of a display panel provided by the related art. Referring to Figure 1 , the LED light emitting device of the display panel 100 in the related art is exemplarily taken as a red LED device 10 structure diagram, a single LED device 10 is bonded to a driving substrate 11 by means of massive transfer, in order to improve the display effect of the display panel 100, the existing technology usually fills the periphery and the bottom of the LED device 10 with light absorbing material 12 to reduce the reflectivity. Since the UV light cannot penetrate the red LED device 10, the curing of the light absorbing material 12 at the bottom is not complete, and the incomplete curing will cause the problem of separation of the light absorbing material 12 from the bottom of the red LED device 10, which is easy to cause the problem of reliability risk of the overall device, and affects the display effect of the display panel.

[0033] Based on the above technical problems, the embodiment of the present application provides a display panel, which comprises a driving substrate, a light emitting element and a curing layer, the light emitting element is located on one side of the driving substrate; the light emitting element comprises a first type semiconductor, a light emitting layer and a second type semiconductor arranged along a first direction; the side of the first type semiconductor away from the light emitting layer comprises a first groove, the side of the second type semiconductor away from the light emitting layer comprises a second groove, and along the first direction, the first groove and the second groove at least partially overlap; the curing layer is located on the same side of the driving substrate as the light emitting element, and the curing layer comprises a first part overlapping the light emitting element, and the first part is located on the side of the light emitting element close to the driving substrate; wherein the first direction is perpendicular to the plane in which the driving substrate is located.

[0034] By adopting the above technical scheme, by arranging a plurality of grooves on the upper and lower two semiconductor layers of the light emitting element, along the longitudinal direction, the grooves have an overlapping area, the grooves and the overlapping area are used to improve the light transmittance of the light emitting element, improve the curing degree of the curing layer material at the bottom of the light emitting element, thereby improving the bonding strength of the light emitting device and the reliability of the overall device, and also reducing the risk of separation and falling of the curing layer from the bottom of the light emitting element, and ensuring to improve the display effect of the display panel.

[0035] The above is the core idea of the present application, and the technical solutions in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0036] Figure 2 is a top view schematic diagram of a display panel provided by the embodiment of the present application; Figure 3 is Figure 2 is a cross-sectional schematic diagram of the display panel along the AA' direction in Figure 2 and Figure 3As shown, the display panel 200 provided by the embodiment of the present application includes a driving substrate 20, a light emitting element 30 and a curing layer 40, the light emitting element 30 is located on one side of the driving substrate 20; the light emitting element 30 includes a first type semiconductor 31, a light emitting layer 32 and a second type semiconductor 33 arranged along a first direction; the first type semiconductor 31 includes a first groove 310 on the side away from the light emitting layer 32, the second type semiconductor 33 includes a second groove 330 on the side away from the light emitting layer 32, and the first groove 310 and the second groove 330 at least partially overlap along the first direction; the curing layer 40 is located on the same side of the driving substrate 20 as the light emitting element 30, and the curing layer 40 includes a first part 41 overlapping the light emitting element 30, and the first part 41 is located on the side of the light emitting element 30 close to the driving substrate 20; wherein the first direction Z is perpendicular to the plane on which the driving substrate 20 is located.

[0037] Specifically, referring to Figure 3 As shown, the display panel 200 can include an LED (Light Emitting Diode, Light Emitting Diode) display panel, a Micro LED (Micro Light Emitting Diode, Micro Light Emitting Diode) display panel, a Mini LED (Mini Light Emitting Diode, Submillimeter Light Emitting Diode) display panel, etc., and the embodiment of the present application does not specifically limit the type of display panel 200.

[0038] The light emitting element 30 can be an LED, a Micro LED, a Mini LED, etc., and the embodiment of the present application does not make any limitation. The light emitting element 30 includes a first type semiconductor 31, a light emitting layer 32 and a second type semiconductor 33 arranged along the X direction, wherein, Figure 3 In the embodiment, the first type semiconductor 31 can be an N-type phosphide semiconductor layer, and the second type semiconductor 33 is a P-type phosphide semiconductor layer; in other embodiments, the first type semiconductor 31 can be a P-type phosphide semiconductor layer, and the second type semiconductor 33 is an N-type phosphide semiconductor layer, forming a P-N junction, and the embodiment of the present application only takes Figure 3The structure shown is illustrative. The present application thins and / or trepanning the first type semiconductor 31 and the second type semiconductor 33, for example, using an etching process, a plurality of first grooves 310 are etched on the side of the first type semiconductor 31 away from the light emitting layer 32, a plurality of second grooves 330 are etched on the side of the second type semiconductor 33 away from the light emitting layer 32, along the Z direction in the figure, the first grooves 310 and the second grooves 330 at least partially overlap to form a longitudinal overlap region. After the light emitting element 30 is massively transferred and bonded to the driving substrate 20, a solidified layer 40 of black material is deposited on the same side of the light emitting element 30 to reduce reflectivity, during the deposition of the solidified layer 40, part of the solidified layer 40 accumulates to the bottom of the light emitting element 30 to form a first part 41 overlapping the light emitting element 30, part of the solidified layer 40 accumulates to the periphery of the light emitting element 30 to form a second part 42 not overlapping the light emitting element 30; further, the solidified layer 40 is cured using external curing light (UV light), the UV light directly irradiates the second part 42 of the solidified layer 40 to cure it, the UV light transmits through the first grooves 310, the second grooves 330 and the overlap region to irradiate the first part 41 of the solidified layer 40 to cure it, the first grooves 310, the second grooves 330 and especially the overlap region can improve the transmittance of the light emitting element 30 to external incident light, improve the curing degree of the material of the first part 41 of the solidified layer 40 at the bottom of the light emitting element 30, avoid incomplete curing of the solidified layer 40 at the bottom, thereby improving the bonding strength of the light emitting element 30 and the overall reliability. On the other hand, when the light emitting element 30 is normally displayed, the first grooves 310 can also improve the light extraction efficiency of the light emitting element 30 itself, improve the luminous intensity of the light emitting element 30, and ultimately improve the display effect of the display panel.

[0039] With continued reference to Figure 3 As shown, the driving substrate 20 includes a substrate 21 and a pixel circuit layer 22 on one side of the substrate 21, the driving substrate 21 can be a rigid material such as glass or silicon wafer, or a flexible material such as ultra-thin glass, metal foil or polymer plastic material, the flexible or rigid driving substrate 21 can block oxygen and moisture, preventing moisture or impurities from diffusing into the display panel through the driving substrate 21. The pixel circuit layer 22 includes a pixel circuit, which can be a 2T1C, 4T1C, 7T1C, 7T2C, 8T1C, 8T2C or the like circuit structure, the pixel circuit includes a plurality of thin film transistors 220, storage capacitors and metal wiring and the like film layer structure (not shown in the figure) and the like, the drain (or source) of the thin film transistor 220 is electrically connected to the anode of the light emitting element 30, the pixel circuit layer 22 is used to provide a driving voltage to the light emitting element 30 to drive the light emitting element 30 to emit light.

[0040] The display panel 200 provided by the embodiment further comprises other film layers such as a thin film packaging layer (not shown in the figure), which jointly realize the display function of the display panel, and will not be described one by one here.

[0041] To sum up, the display panel provided by the embodiment improves the light transmittance of the light emitting element by arranging the grooves in the upper and lower semiconductor layers of the light emitting element, and improving the curing degree of the curing layer material at the bottom of the light emitting element, thereby improving the bonding strength of the light emitting device and the reliability of the whole device, and reducing the risk of separation of the curing layer from the bottom of the light emitting element, and ensuring the display effect of the display panel.

[0042] Based on the above embodiment, continuing to refer to Figure 3 As shown in FIG. 10, along the first direction Z, the depth h1 of the first groove 310 is less than the thickness H1 of the first type semiconductor 31, and the depth h2 of the second groove 330 is less than the thickness H2 of the second type semiconductor 33.

[0043] Specifically, continuing to refer to Figure 3 As shown in FIG. 10, in some embodiments, the groove depth in the first type semiconductor 31 and the second type semiconductor 33 is less than the thickness of the semiconductor layer in which it is located, that is, h1

[0044] Figure 4 is Figure 2 FIG. 10 is a schematic cross-sectional view of another display panel along the AA' direction in the embodiment, and specifically, in combination with Figure 3 As shown in FIG. 10, along the first direction Z, the depth h1 of the first groove 310 is less than the thickness H1 of the first type semiconductor 31.

[0045] Specifically, referring to Figure 4 As shown in FIG. 10, h1

[0046] Figure 5 is Figure 2 FIG. 10 is a schematic cross-sectional view of another display panel along the AA' direction in the embodiment, and specifically, in combination with Figure 5 As shown in FIG. 10, along the first direction Z, the depth h2 of the second groove 330 is less than the thickness H2 of the second type semiconductor 33.

[0047] Specifically, referring to Figure 5As shown, h2 < H2 can be set only, and a through hole is set in the first type semiconductor 31, that is, h1 = H1, and the transmittance of the first groove 310 in the first type semiconductor 31 to light is increased.

[0048] It should be noted that, Figures 3-5 The depth of the groove can be set reasonably according to the transmittance of the light-emitting element to light, the curing degree of the curing layer, and different light-emitting requirements on the basis of meeting the normal display of the light-emitting element.

[0049] Figure 6 is Figure 2 As shown in reference 6, the first type semiconductor 31 includes a first doped layer 311 and a second doped layer 312, and the second type semiconductor 33 includes a third doped layer 331 and a fourth doped layer 332; the first doped layer 311 is located on the side of the second doped layer 312 away from the light-emitting layer 32, and the fourth doped layer 332 is located on the side of the third doped layer 331 away from the light-emitting layer 32; the first groove 310 is located in the first doped layer 311, and the second groove 330 is located in the fourth doped layer 332.

[0050] Specifically, referring to Figure 6 As shown, in more detail, the first type semiconductor 31 is an N-type phosphide layer, the first doped layer 311 is an N-AlGaInP layer with a thickness ranging from 1 μm to 1.5 μm, and the second doped layer 312 is an N-AlInP layer with a thickness of about 400 nm; the second type semiconductor 33 is a P-type phosphide layer, the third doped layer 331 is a P-AlGaInP layer and a P-AlInP layer, the P-AlGaInP layer has a thickness of about 100 nm, and the P-AlInP layer has a thickness of about 500 nm; the fourth doped layer 332 is a P-GaP layer with a thickness ranging from 1 μm to 1.5 μm, and the light-emitting layer 32 is a quantum well layer 200 with a thickness of about 400 nm. A plurality of first grooves 310 are set in the N-AlGaInP layer with a thickness of 1 μm to 1.5 μm, and a plurality of second grooves 330 are set in the P-GaP layer with a thickness of 1 μm to 1.5 μm. The groove is set in the film layer structure away from the light-emitting layer 30 and thicker, and the groove depth range is larger, which can reduce the difficulty of the groove process, accurately control the groove depth, avoid the semiconductor layer film layer from being perforated, ensure the signal transmission function of the whole semiconductor layer, and ensure the light-emitting performance of the light-emitting element 30.

[0051] On the basis of the above embodiment, in combination with Figures 3-6As shown, the light emitting element 30 further comprises a first electrode 301 and a second electrode 302; the first electrode 301 is connected with the first semiconductor layer 31, and the second electrode 302 is connected with the second semiconductor layer 33; along the first direction, the first electrode 301 and / or the second electrode 302 has no overlap with the first recess 310 and / or the second recess 330.

[0052] Specifically, referring to Figures 4-6 As shown, the first electrode 301 and the second electrode 302 of the light emitting element 30 are generally metal PADs, and the materials thereof include but are not limited to metals such as Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu and / or AlNd, etc., and the light transmission performance thereof is poor. Along the Z direction in the figure, the first recess 310 is located in a region that has no overlap with the first electrode 301 and the second electrode 302, and the second recess 330 is located in a region that has no overlap with the first electrode 301 and the second electrode 302, so that the light can be prevented from being blocked by the electrodes and the light transmission of the recesses can be ensured.

[0053] Among them, the first electrode 301 can be an anode, and the second electrode 302 can be a cathode; or the first electrode 301 can be a cathode, and the second electrode 302 can be an anode, which is not limited by the embodiments of the present application.

[0054] On the basis of the above-mentioned embodiments, continuing to refer to Figures 3-6 As shown, the side of the first semi-conductive layer 31 away from the light emitting layer 32 comprises a plurality of first recesses 310, and the side of the second type semiconductor 33 away from the light emitting layer 32 comprises a plurality of second recesses 330.

[0055] Exemplarily, the number and size of the first recess 310 and the second recess 330 can be the same or different, and along the Z direction in the figure, the first recess 310 and the second recess 330 are arranged one by one in correspondence, and each group of corresponding first recess 310 and second recess 330 at least partially overlaps. When the curing layer 40 is cured, the light transmits through the first recess 310, the second recess 330 and the overlapping region of the two, so as to strengthen the curing degree of the curing layer 40 at the bottom of the light emitting element 30, reduce the risk of separation of the curing layer 40 from the bottom of the light emitting element 30, and improve the bonding strength of the light emitting device and the reliability of the whole device.

[0056] On the basis of the above-mentioned embodiments, continuing to refer to Figure 2 As shown, along the first direction Z, the area of the light emitting element 30 in the orthographic projection on the driving substrate 20 is W1, and the sum of the areas of the plurality of first recesses 310 or the plurality of second recesses 330 in the orthographic projection on the driving substrate 20 is W2, and the value range of W2 is 20%W1~80%W1.

[0057] Specifically, as Figure 2As shown, by controlling the area ratio of the groove in the light emitting area of the light emitting element 30 to be 20% ~ 80%, the light transmittance of the light emitting element 30 can be improved, and the current driving function of the first type semiconductor 31 and the second type semiconductor 33 to the light emitting layer 32 can be ensured, so that the electrons and holes meet in the P-N junction area, energy is released to generate light, and the normal display of the light emitting element 30 is ensured.

[0058] Figure 7 is a top view of a light emitting element provided by an embodiment of the present application, Figure 8 is Figure 2 is a schematic cross-sectional view of another display panel along the AA' direction in the above embodiment. Based on the above embodiment, refer to Figure 7 As shown, the second groove 330 is located on the side of the first groove 310 away from the driving substrate 20; the area S1 of the orthographic projection of the first groove 310 on the driving substrate 20 is greater than the area S2 of the orthographic projection of the second groove 330 on the driving substrate 20; and / or, in combination with Figure 5 and Figure 8 As shown, in the first direction, the depth h1 of the first groove 310 is greater than the depth h2 of the second groove 330.

[0059] Specifically, refer to Figure 7 As shown, for example, the orthographic projection of the light emitting element 30 on the driving substrate 20 is a rectangle with an area of LxW, the orthographic projection area of the first groove 310 on the driving substrate 20 is S1, the orthographic projection area of the second groove 330 on the driving substrate 20 is S2, and when external light passes through the first groove 310 and the light emitting layer 32 to reach the first type semiconductor 31, the light attenuation gradually increases. By increasing the orthographic projection area S1 of the first groove 310 on the driving substrate 20, i.e. S2 < S1; and / or increasing the depth h1 of the first groove 310, i.e. h2 < h1, the light transmittance of the lower first type semiconductor 31 can be improved, and the curing degree of the bottom curing layer 40 of the light emitting element 30 can be ensured to achieve complete curing.

[0060] Figure 9 is Figure 2 is a schematic cross-sectional view of another display panel along the AA' direction in the above embodiment. Based on the above embodiment, refer to Figure 9 As shown, in the same light emitting element 30, the depth of the first groove 310 and / or the second groove 330 gradually decreases from the center area to the edge area of the light emitting element 30.

[0061] Specifically, when curing the curing layer 40, part of the light can be reflected from the periphery of the light emitting element 30 into the bottom of the light emitting element 30 to irradiate the curing layer 40, but the center area of the light emitting element 30 receives less reflected light. If only the light transmitted from the top of the light emitting element 30 is used, it is difficult to completely cure the curing layer 40 in the center area, so thatFigure 9 Three feasible manners are shown in the figure, by differentiating the structure of the first groove 310 and the second groove 330 in the same light emitting element 30, the light transmittance of the light emitting element 30 is improved.

[0062] In a feasible embodiment, the depth of the first groove 310 and the second groove 330 in the light emitting element 30a is gradually reduced from the central region to the edge region of the light emitting element 30a.

[0063] In a feasible embodiment, the depth of the first groove 310 in the light emitting element 30b is gradually reduced from the central region to the edge region of the light emitting element 30a.

[0064] In a feasible embodiment, the depth of the second groove 330 in the light emitting element 30c is gradually reduced from the central region to the edge region of the light emitting element 30a.

[0065] In this way, the light transmittance of the central region of the light emitting element 30 is improved, and the curing degree of the curing layer 40 at the bottom of the light emitting element 30 is improved.

[0066] Figure 10 is a test diagram of the light transmittance of light emitting elements of different light emitting colors. Referring to Figure 10 As shown in the figure, the transmittance TR of the material of the red light emitting element R to the ultraviolet light of the wavelength band of 360nm~420nm is almost 0, and the transmittance TR of the blue light emitting element B or the green light emitting element G to the ultraviolet light of the wavelength band of 360nm~420nm is 0~50%. Based on this, in order to further improve the transmittance of the light emitting element of the long-wavelength light emitting color to the UV light, the groove structure in the light emitting element of different light emitting colors can be differentiated to improve the transmittance of the light emitting element to the UV light.

[0067] Figure 11 is Figure 2 is a schematic cross-sectional view of another display panel along the AA' direction in the figure, Figure 12 is a top view of another display panel provided by the embodiment of the present application. Based on the above-mentioned embodiment, referring to Figure 11 and Figure 12 As shown in the figure, the light emitting element 30 includes a first light emitting element 30R and a second light emitting element 30B / G, and the light emitting wavelength of the first light emitting element 30R is greater than the light emitting wavelength of the second light emitting element 30B / G; referring to Figure 11 As shown in the figure, along the first direction Z, the depth of the first groove 310 in the first light emitting element 30R is greater than the depth of the first groove 310 in the second light emitting element 30B / G; and / or, the depth of the second groove 330 in the first light emitting element 30R is greater than the depth of the second groove 330 in the second light emitting element 30B / G (not shown in the figure); and / or, referring to Figure 12As shown, the area of the first recess 310 in the first light emitting element 30R orthogonally projected on the driving substrate 20 is greater than the area of the first recess 310 in the second light emitting element 30B / G orthogonally projected on the driving substrate 20; and / or, the area of the second recess 330 in the first light emitting element 30R orthogonally projected on the driving substrate 20 is greater than the area of the second recess 330 in the second light emitting element 30B / G orthogonally projected on the driving substrate 20.

[0068] Specifically, referring to Figure 11 As shown, the first light emitting element 30R can be a red light emitting element R, and the second light emitting element 30B / G can be a blue light emitting element B or a green light emitting element G. Compared with the first recess 310 in the second light emitting element 30B / G, the depth or the groove area of the first recess 310 in the first light emitting element 30R is increased; and / or, compared with the second recess 330 in the second light emitting element 30B / G, the depth or the groove area of the second recess 330 in the first light emitting element 30R is increased, so as to improve the transmittance of the red light emitting element to UV light and improve the curing degree of the curing layer 40 at the bottom of the first light emitting element 30R.

[0069] It should be noted that, Figure 11 In some embodiments, the green light emitting element 30G and the blue light emitting element 30B have similar transmittances to light in the 0-720 nm band. In these embodiments, the recesses in the green light emitting element 30G and the blue light emitting element 30B can be arranged in the same structure, which is easy to simplify the manufacturing process and reduce production costs. Figure 10 In other embodiments, when the transmittances of the green light emitting element 30G and the blue light emitting element 30B to light in the 0-720 nm band are quite different, the recesses can be arranged differently according to the transmittances of the light emitting elements to UV light, so as to improve the transmittances of light emitting elements of different colors to light and improve the curing degree of the curing layer at the bottom of the light emitting element.

[0070] Figure 13 In some embodiments, the green light emitting element 30G and the blue light emitting element 30B have similar transmittances to light in the 0-720 nm band. In these embodiments, the recesses in the green light emitting element 30G and the blue light emitting element 30B can be arranged in the same structure, which is easy to simplify the manufacturing process and reduce production costs. Figure 2 In other embodiments, when the transmittances of the green light emitting element 30G and the blue light emitting element 30B to light in the 0-720 nm band are quite different, the recesses can be arranged differently according to the transmittances of the light emitting elements to UV light, so as to improve the transmittances of light emitting elements of different colors to light and improve the curing degree of the curing layer at the bottom of the light emitting element. Figure 13 As shown, the first recess 310 and / or the second recess 330 are filled with a filling material 50; the transmittance of the filling material 50 is greater than the transmittances of the first type semiconductor 31 and the second type semiconductor 33.

[0071] Specifically, referring to Figure 13As shown, the filling material 50 is an anti-reflection material, for example, a nitride oxide, a polyimide (PI) film, a polyolefin (PP, PE) film, etc. The first groove 310 and the second groove 330 are filled with the anti-reflection material. The filling material 50 is selected to have a light transmittance greater than that of the first-type semiconductor 31 and the second-type semiconductor 33. By using the rule that light is prone to total reflection when propagating from a high-density medium to a low-density medium, the light is confined in the grooves and propagates in the grooves, thereby reducing light loss, increasing the light flux reaching the bottom of the light-emitting element 30, and increasing the curing degree of the curing layer 40.

[0072] It should be noted that the embodiments of the present application are not limited to Figure 3 、 Figures 4-6 、 Figures 8-9 The first groove 310 and the second groove 330 can also be filled with the anti-reflection material, which is not shown in the drawings of the embodiments of the present application, to increase the light transmittance of the light-emitting element 30.

[0073] In other embodiments, continuing to refer to Figure 13 As shown, the filling material 50 can also be configured to have a light transmittance greater than that of the curing layer 40, i.e., the filling material 50 has a greater light transmittance than the curing layer 40.

[0074] Based on the above embodiments, continuing to refer to Figure 2 and Figure 7 As shown, the shape of the first groove 310 and / or the second groove 330 includes at least one of a cylindrical groove, a rectangular groove, and a rounded rectangular groove.

[0075] Specifically, the shape of the first groove 310 and / or the second groove 330 can be any shape such as a circle, a rectangle, etc. Only a circle and a rectangle are shown in the drawings, and more shapes are not shown in the embodiments of the present application. The arrangement of the grooves can be regular or random. The total area of the thinned grooves accounts for 20%-80% of the light-emitting area of the light-emitting element 30. By thinning and / or opening the upper and lower semiconductor layers, the light transmittance of the light-emitting element 30 is increased, and the curing degree of the curing layer 40 at the bottom of the light-emitting element 30 is increased.

[0076] Based on the same inventive concept, the embodiments of the present application also provide a preparation method of a display panel for preparing the display panel provided in the above embodiments. Figure 14 FIG. 1 is a flowchart of a preparation method of a display panel according to an embodiment of the present application. In combination with Figures 2-14 As shown, the preparation method of the display panel includes the following steps.

[0077] S101, providing a driving substrate.

[0078] Specifically, continuing to refer to Figure 3As shown, the driving substrate 20 includes a substrate 21 and a pixel circuit layer 22 on one side of the substrate 21. The pixel circuit of the pixel circuit layer 22 can be a 2T1C, 4T1C, 7T1C, 7T2C, 8T1C, 8T2C, or the like circuit structure. The pixel circuit includes a plurality of thin film transistors 220, a storage capacitor, a metal trace, and the like film layer structure (not shown in the figure), and the like. For example, the top gate type thin film transistor is taken as an example to illustrate the structure of the pixel circuit layer 22. For details, refer to Figure 3 As shown, the pixel circuit layer 22 includes an active layer 221 on the driving substrate 21; a gate insulating layer 222 on the active layer 221; a gate 223 on the gate insulating layer 222; a first interlayer insulating layer 224 on the gate 223, a capacitor layer 225 on the first interlayer insulating layer 224, and a second interlayer insulating layer 226 on the capacitor layer 225, wherein the interlayer insulating layer can be formed by an inorganic layer insulating such as silicon oxide or silicon nitride; a source electrode 227 and a drain electrode 228 on the second interlayer insulating layer 226, wherein the source electrode 227 and the drain electrode 228 are respectively electrically connected to the source region and the drain region through a contact hole (not shown in the figure), a passivation layer 229 on the source electrode 227 and the drain electrode 228 of the thin film transistor 220; and an insulating layer 23, also known as a planarization layer, having a planarization effect. The drain electrode 228 of the thin film transistor 220 and the anode 30-A of the light emitting element 30 are electrically connected through a connecting electrode 230 in the insulating layer 23. The connecting electrode 230 can be the same material as the source electrode 227 and the drain electrode 228, for example, can be a metal such as Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu, and / or AlNd, or a metal or conductive oxide including ITO, GIZO, GZO, IZO (InZnO), or AZO (AlZnO), to ensure the transmission of the current signal.

[0079] S102, preparing a light emitting element.

[0080] The light emitting element includes a first type semiconductor, a light emitting layer, and a second type semiconductor stacked along a first direction. The first type semiconductor includes a first recess on a side away from the light emitting layer, and the second type semiconductor includes a second recess on a side away from the light emitting layer. The first recess and the second recess at least partially overlap along the first direction.

[0081] Specifically, continue to combine Figure 3 , Figures 4-6 , Figures 8-9 , Figure 11 and Figure 13As shown, the first-type semiconductor 31 and the second-type semiconductor 33 of the light-emitting element 30 are thinned and / or drilled, and a plurality of first grooves 310 are etched on the side of the first-type semiconductor 31 away from the light-emitting layer 32, and a plurality of second grooves 330 are etched on the side of the second-type semiconductor 33 away from the light-emitting layer 32, the first grooves 310 and the second grooves 330 at least partially overlap along the Z direction in the figure, forming a longitudinal overlapping area, and the light transmittance of the light-emitting element 30 is improved through the first grooves 310, the second grooves 330, and especially the overlapping area.

[0082] S103, transferring the light-emitting element to one side of the driving substrate.

[0083] Specifically, with continued reference to Figure 3 As shown, the light-emitting element 30 is massively transferred to the side of the driving substrate 20 and bonded and connected, specifically, the anode 30-A of the light-emitting element 30 is electrically connected to the thin film transistor 220 of the driving substrate 20, and the cathode 30-B of the light-emitting element 30 is electrically connected to a common electrode (not shown in the figure), so as to drive the light-emitting element 30 to emit light.

[0084] S104, depositing a solidification layer on the surface of the driving substrate where the light-emitting element is located, and solidifying the solidification layer.

[0085] The solidification layer includes a first part overlapping with light emission, and the first part is located on the side of the light-emitting element close to the driving substrate.

[0086] Specifically, the solidification layer 40 is irradiated with UV light, and the light transmits through the first grooves 310, the second grooves 330, and especially the overlapping area to solidify the material of the first part 41 of the solidification layer 40 at the bottom of the light-emitting element 30, which can improve the overall reliability of the light-emitting element 30.

[0087] Based on the same inventive concept, the present application also provides a display device. Figure 15 The structure diagram of the display device provided by the embodiment of the present application is as follows, Figure 15 As shown, the display device includes any one of the display panels provided by the above embodiments. For example, as shown, Figure 15 As shown, the display device 300 includes the display panel 200. Therefore, the display device also has the beneficial effects of the display panel in the above embodiments, and the same parts can be understood with reference to the above explanation and description of the display panel, which will not be repeated here.

[0088] The display device 300 provided by the embodiment of the present application can be Figure 15The shown mobile phone can also be any electronic product with display function, including but not limited to the following categories: television, notebook computer, desktop display, tablet computer, digital camera, smart bracelet, smart glasses, vehicle-mounted display, industrial control equipment, medical display screen, touch interaction terminal, etc., and the embodiments of the present application do not make special limitations thereon.

[0089] It should be noted that the above only describes the preferred embodiments of the present application and the technical principles applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, re-adjustments and substitutions without departing from the scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A display panel, characterized by, The display panel comprises a driving substrate; a light-emitting element located on one side of the driving substrate; the light-emitting element comprises a first-type semiconductor, a light-emitting layer and a second-type semiconductor arranged along a first direction; a side of the first-type semiconductor away from the light-emitting layer comprises a first groove, a side of the second-type semiconductor away from the light-emitting layer comprises a second groove, and the first groove and the second groove at least partially overlap along the first direction; the light-emitting element further comprises a first electrode and a second electrode, the first electrode is connected with the first-type semiconductor, and the second electrode is connected with the second-type semiconductor; along the first direction, the first electrode does not overlap with the first groove and the second groove, and the second electrode does not overlap with the first groove and the second groove; a solidified layer located on the same side of the driving substrate as the light-emitting element, the solidified layer comprises a first part overlapping with the light-emitting element, and the first part is located on a side of the light-emitting element close to the driving substrate; the solidified layer is cured by light; wherein the first direction is perpendicular to the plane in which the driving substrate is located.

2. The display panel of claim 1, wherein along the first direction, the depth of the first groove is less than the thickness of the first-type semiconductor; and / or the depth of the second groove is less than the thickness of the second-type semiconductor. the first-type semiconductor comprises a first doped layer and a second doped layer, and the second-type semiconductor comprises a third doped layer and a fourth doped layer; 3. The display panel of claim 1, wherein, the first doped layer is located on a side of the second doped layer away from the light-emitting layer, and the fourth doped layer is located on a side of the third doped layer away from the light-emitting layer; the first groove is located in the first doped layer, and the second groove is located in the fourth doped layer.

4. The display panel of claim 1, wherein a side of the first-type semiconductor away from the light-emitting layer comprises a plurality of first grooves, and a side of the second-type semiconductor away from the light-emitting layer comprises a plurality of second grooves. along the first direction, the area of the light-emitting element orthogonally projected on the driving substrate is W1, the sum of the areas of the plurality of first grooves or the plurality of second grooves orthogonally projected on the driving substrate is W2, and the value of W2 is in the range of 20% W1 to 80% W1.

5. The display panel of claim 4, wherein, the second groove is located on a side of the first groove away from the driving substrate; 6. The display panel of claim 1, wherein, the area of the first groove orthogonally projected on the driving substrate is greater than the area of the second groove orthogonally projected on the driving substrate; and / or along the first direction, the depth of the first groove is greater than the depth of the second groove. in the same light-emitting element, the depth of the first groove and / or the second groove gradually decreases from a central region to an edge region of the light-emitting element.

7. The display panel of claim 1, wherein, in the same light-emitting element, the area of the first groove and / or the second groove orthogonally projected on the driving substrate gradually decreases from a central region to an edge region of the light-emitting element.

8. The display panel of claim 1, wherein, ​ 9. The display panel of claim 1, wherein, The light-emitting element comprises a first light-emitting element and a second light-emitting element, the light-emitting wavelength of the first light-emitting element is greater than the light-emitting wavelength of the second light-emitting element; In the first direction, the thickness of the first recess in the first light-emitting element is greater than the thickness of the first recess in the second light-emitting element; and / or, The thickness of the second recess in the first light-emitting element is greater than the thickness of the second recess in the second light-emitting element; and / or, The area of the first recess in the first light-emitting element orthogonally projected on the driving substrate is greater than the area of the first recess in the second light-emitting element orthogonally projected on the driving substrate; And / or, The area of the second recess in the first light-emitting element orthogonally projected on the driving substrate is greater than the area of the second recess in the second light-emitting element orthogonally projected on the driving substrate.

10. The display panel of claim 1, wherein, The first recess and / or the second recess is provided with a filling material; The transmittance of the filling material is greater than the transmittance of the first type semiconductor and the second type semiconductor.

11. The display panel of claim 1, wherein, The shape of the first recess and / or the second recess comprises at least one of a cylindrical groove, a rectangular groove, and a rounded rectangular groove.

12. A preparation method of a display panel, for preparing the display panel of any one of claims 1-11, the preparation method comprising: providing a driving substrate; preparing a light-emitting element, the light-emitting element comprising a first type semiconductor, a light-emitting layer, and a second type semiconductor stacked along a first direction; the side of the first type semiconductor away from the light-emitting layer comprising a first recess, the side of the second type semiconductor away from the light-emitting layer comprising a second recess, along the first direction, the first recess and the second recess at least partially overlapping; transferring the light-emitting element to one side of the driving substrate; depositing a solidification layer on the surface of the driving substrate where the light-emitting element is located, and solidifying the solidification layer; wherein the solidification layer comprises a first part overlapping the light-emitting element, the first part being located on the side of the light-emitting element close to the driving substrate.

13. A display device comprising: comprising the display panel of any one of claims 1-11.

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