High speed testing apparatus and method for an array of optoelectronic devices

Abstract

The application discloses a high-speed detection equipment and a detection method of a photoelectric device array. The high-speed detection equipment comprises a first support platform comprising a first conductive plate, the first support platform is used for bearing a photoelectric device array to be detected, the first support platform is carried on a support platform multi-axis displacement mechanism, a first conductor corresponding to the first conductive plate is arranged above the first support platform, the first conductor is carried on a conductor support frame, the conductor support frame is connected with a support frame vertical three-axis displacement mechanism, a first optical lens is arranged above the conductor, the first optical lens is carried on an optical vertical displacement mechanism, a first light path module is arranged in the optical vertical displacement mechanism, and the first light path module is connected with the first optical lens. The high-speed detection equipment further comprises an electrical module for power supply and an imaging optical microscopic module for detection. The parallel relationship of each component is adjusted, so that the detection result is more accurate and reliable.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronics, in particular to a high-speed detection device and method for an array of optoelectronic devices. BACKGROUND

[0002] The current global semiconductor industry is facing external pressure and challenges. With the support of relevant national policies and funds, the rapid development of optoelectronic technologies such as new display technologies and photovoltaic technologies in research and development, process, manufacturing, and other aspects has been promoted, realizing a leap from basic research to industrialization. It is expected that in the next few years, this type of optoelectronic technology will further realize commercial application, and the market size will continue to expand, becoming a new growth point for the semiconductor industry.

[0003] Taking new display technology as an example, one of its foundations is optoelectronic devices, which are a class of electronic devices that can generate light radiation through current or other excitation methods. They include light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), micro light-emitting diode displays (Micro-LEDs), laser diodes (LDs), infrared light-emitting diodes (IR LEDs), barium strontium titanate (SBO) crystals, electroluminescent (EL) devices, etc. Among them, the most important optoelectronic device in the next stage is the micro light-emitting diode display (Micro-LED). Due to low yield and high cost, micro-LED displays have been difficult to achieve commercialization. There are many reasons for the high cost, one of which is the defects and bad points in the micro-LED wafer preparation process, which leads to low yield and high cost of LED epitaxial wafers in the upstream process chain. If such problems flow into the subsequent production process, there will be a large number of defects, which will eventually accumulate in the product process and cause a great impact. Therefore, after preparing optoelectronic devices, a complex, tedious, and high-cost repair process is needed to remove and repair the defects and bad points on the display screen one by one, which seriously hinders the rapid development of China's new display industry under the trend of new round of industrial transformation. In order to solve the problem of defects and bad points in the preparation process of optoelectronic devices, it is of great significance to design a high-speed detection device that can drive the array of optoelectronic devices without touching the array and causing mechanical damage to the array. In the field of photovoltaic technology, researchers have proposed various non-contact solar cell testing methods, such as using thermal imaging, photoelectron microscopy, and laser scanning to obtain the electrical characteristic parameters of solar cells. However, these technologies still have some limitations, such as low testing accuracy and high cost, which need to be continuously improved and optimized. Therefore, similarly, solar cell detection also urgently needs a technology that can achieve high-speed detection without touching the device.

[0004] In addition, during the large-scale non-contact detection of the photoelectric panel, the panel warping will affect the detection accuracy. Non-contact detection requires that the detection probe and the panel maintain a fixed distance and scan horizontally. However, the warping of the panel will change this distance, thereby affecting the accuracy of the detection. The traditional method uses laser ranging to scan the warping of the panel in advance. However, the hardware cost of laser ranging is high, and when there are a large number of micro-nano structures on the surface of the panel, the laser spot is not easy to focus, thereby affecting the judgment of the degree of warping of the panel by the equipment. SUMMARY

[0005] The applicant has found that the photoelectric device array can be made to electroluminesce by an alternating electromagnetic field, and the imaging information of the electroluminescent photoelectric device array can be collected to obtain the light-emitting condition of the photoelectric device array from the imaging information, thereby realizing the detection of the photoelectric device array. When the electrically conductive body for generating an electromagnetic field, the optical lens for detection, and the photoelectric device are not parallel, the detection accuracy will be reduced, mainly due to the following reasons: 1. The photoelectric device array and the electrically conductive body are not parallel, which causes the electromagnetic field intensity at each position corresponding to the detection area of the photoelectric device array to be inconsistent, so that the light-emitting of the detection area is not uniform, thereby it is not possible to determine whether the non-uniform light-emitting is caused by unqualified light-emitting points or inconsistent electromagnetic field intensity. 2. The photoelectric device array and the optical lens are not parallel, which causes the light emitted by the detection area of the photoelectric device array when electroluminescing to be inclined to irradiate on the optical lens, and the radiation illuminance distribution on the optical lens is not uniform, so that the detection area which originally emits light uniformly becomes non-uniform in the imaging.

[0006] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present application is to provide a high-speed detection device and a detection method for a photoelectric device array, which aims to improve the detection accuracy of the photoelectric device array.

[0007] To achieve the above-mentioned purpose, the first aspect of the present application discloses a high-speed detection device, which comprises: a first support platform for carrying a photoelectric device array to be detected, the first support platform being mounted on a support platform multi-axis displacement mechanism, a first electrically conductive body being arranged above the first support platform and opposite to the first support platform, the first electrically conductive body being mounted on an electrically conductive body support frame, the electrically conductive body support frame being connected with a support frame vertical three-axis displacement mechanism, a first optical lens being arranged above the electrically conductive body, the first optical lens being mounted on an optical vertical displacement mechanism, a first optical path module being arranged in the optical vertical displacement mechanism, and the first optical path module being connected with the first optical lens.

[0008] The high-speed detection device further comprises an electrical module and an imaging optical microscopic module, a first output end of the electrical module is connected with the first conductive body, a second output end of the electrical module is directly connected with the common end of the array of photoelectric devices or is connected with the common end of the array of photoelectric devices through a first conductive plate arranged on the first support platform, the electrical module is used to output a preset voltage to form a first alternating electromagnetic field between the first conductive body and the common end of the array of photoelectric devices or the first conductive plate, and the first alternating electromagnetic field causes the array of photoelectric devices to be detected to emit light; and the imaging optical microscopic module is used to collect the light emission imaging information of the array of photoelectric devices to be detected.

[0009] The detection device is configured to: in response to the first support platform carrying the array of photoelectric devices to be detected, control the first light path module and the first optical lens to collect first imaging information of the first conductive body, control the vertical three-axis displacement mechanism of the support frame to adjust the first conductive body to be parallel to the first optical lens according to the first imaging information, in response to the first conductive body being parallel to the first optical lens, control the first light path module and the first optical lens to collect second imaging information of the array of photoelectric devices to be detected, control the multi-axis displacement mechanism of the support platform to adjust the array of photoelectric devices to be detected to be parallel to the first optical lens according to the second imaging information, and control the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected, and control the optical vertical displacement mechanism and / or the multi-axis displacement mechanism of the support platform to adjust the distance between the first conductive body and the array of photoelectric devices to be detected according to the third imaging information.

[0010] Optionally, the first imaging information comprises a first imaging depth of field distribution, the first imaging depth of field distribution is used to determine the positional relationship between the first conductive body and the first optical lens; the second imaging information comprises a second imaging depth of field distribution, the second imaging depth of field distribution is used to determine the positional relationship between the array of photoelectric devices to be detected and the first optical lens; and the third imaging information comprises a third imaging depth of field distribution, the third imaging depth of field distribution is used to determine the vertical distance between the array of photoelectric devices to be detected and the first optical lens.

[0011] Optionally, the imaging optical microscopic module comprises a second optical lens and a second light path module arranged independently, and the second optical lens and the second light path module are used to collect the third imaging information of the array of photoelectric devices to be detected during the detection of the array of photoelectric devices to be detected.

[0012] Optionally, the imaging optical microscopic module is the first optical lens and the first optical path module, and the first optical lens and the first optical path module are used to collect the third imaging information of the array of photoelectric devices to be detected during the detection of the array of photoelectric devices to be detected.

[0013] Optionally, the first conductive body is provided with a plurality of periodically arranged sub-conductive bodies which are mutually insulated; a conductive layer or a semi-conductive layer is connected between the sub-conductive body and the first conductive body; and the surface state of the sub-conductive body includes a metal conductive state, a semiconductor conductive state, a high resistance state, an insulating dielectric layer state, a low vacuum state, a high vacuum state, a liquid state, a liquid crystal state, and a plasma state.

[0014] Optionally, the array of photoelectric devices to be detected includes a light-emitting diode, a light-emitting triode, a nanocrystal light-emitting device, a perovskite light-emitting device, a liquid crystal light-emitting device, an electronic paper light-emitting device, a solar cell, a photodetector, and a thin-film battery; and the array of photoelectric devices to be detected has a common electrical terminal and / or an independent electrical terminal.

[0015] Optionally, the first conductive plate is separately arranged on the first support platform or is a common electrical terminal of the array of photoelectric devices to be detected; and a first medium or direct contact exists between the array of photoelectric devices to be detected and the first conductive plate; wherein the first medium includes a liquid, a gas, a vacuum environment, and a plasma.

[0016] Optionally, the first conductive body and the conductive body support frame have transparency in a light-emitting wavelength range used by a high-speed detection device of the array of photoelectric devices; and the first support platform and the support platform multi-axis displacement mechanism have transparency in the light-emitting wavelength range used by the high-speed detection device of the array of photoelectric devices.

[0017] Optionally, the high-speed detection device further includes an automatic sampling module which is used to place the array of photoelectric devices to be detected on the first support platform or take the array of photoelectric devices to be detected away from the first support platform.

[0018] The second aspect of the present application discloses a high-speed detection method of an array of photoelectric devices, which is applied to the high-speed detection device of the array of photoelectric devices and includes the following steps:

[0019] In step S1, in response to the first support platform carrying the array of photoelectric devices to be detected, the first optical path module and the first optical lens are controlled to collect first imaging information of the first conductive body; and the support frame vertical three-axis displacement mechanism is controlled to adjust the first conductive body to be parallel to the first optical lens according to the first imaging information.

[0020] Step S2, in response to the first electric conductor being parallel to the first optical lens, controlling the first light path module and the first optical lens to collect second imaging information of the array of photoelectric devices to be detected; and controlling the multi-axis displacement mechanism of the support platform to adjust the array of photoelectric devices to be detected to be parallel to the first optical lens according to the second imaging information;

[0021] Step S3, controlling the optical vertical displacement mechanism and / or the multi-axis displacement mechanism of the support platform to adjust the vertical distance between the first electric conductor and the array of photoelectric devices to be detected to a first distance;

[0022] Step S4, controlling the electrical module to output a preset voltage to form a first alternating electromagnetic field between the first electric conductor and the first electrically conductive plate; controlling the imaging optical microscopic module to collect fourth imaging information of the array of photoelectric devices to be detected; and determining whether the corresponding region of the first electric conductor in the array of photoelectric devices to be detected is qualified according to the fourth imaging information;

[0023] Step S5, controlling the multi-axis displacement mechanism of the support platform to move so that the next detection region of the array of photoelectric devices to be detected corresponds to the first electric conductor; controlling the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected; and controlling the optical vertical displacement mechanism and / or the multi-axis displacement mechanism of the support platform to adjust the distance between the first electric conductor and the array of photoelectric devices to be detected according to the third imaging information;

[0024] Step S6, in response to the distance between the first electric conductor and the array of photoelectric devices to be detected reaching the second distance, controlling the imaging optical microscopic module to collect fifth imaging information of the array of photoelectric devices to be detected; and determining whether the corresponding region of the first electric conductor in the array of photoelectric devices to be detected is qualified according to the fifth imaging information;

[0025] Step S7, repeating steps S5 and S6 until all regions of the array of photoelectric devices to be detected are detected.

[0026] The present application has the following advantages: 1. Compared with the prior art, the high-speed detection device provided by the present application can detect without contacting the photoelectric device array and causing mechanical damage to the device array. The principle is to compensate for the irregular spatial form of the photoelectric device array to avoid the decline in detection accuracy caused by the unevenness of the photoelectric device array to be detected or the warping of the support platform. Then, an alternating electromagnetic field excitation voltage source is used to generate a high-frequency high-power voltage signal with a time-varying amplitude and positive-negative relationship, thereby exciting the photoelectric device array to generate controllable light emission radiation, and finally successfully determining the performance of the photoelectric device. The device avoids mechanical damage to the photoelectric device caused by the contact device in the traditional photoelectric device detection process, and has higher detection accuracy, which effectively guarantees the yield of product manufacturing in modern industry. 2. The high-speed detection device comprises a first support platform comprising a first conductive plate, the first support platform being used to carry the photoelectric device array to be detected, the first support platform being mounted on a support platform multi-axis displacement mechanism, a first conductor corresponding to the first conductive plate being arranged above the first support platform, the first conductor being mounted on a conductor support frame, the conductor support frame being connected with a support frame vertical three-axis displacement mechanism, a first optical lens being arranged above the conductor, the first optical lens being mounted on an optical vertical displacement mechanism, a first light path module being arranged in the optical vertical displacement mechanism, the first light path module being connected with the first optical lens; the high-speed detection device further comprises an electrical module and an imaging optical microscopic module, a first output end of the electrical module being connected with the first conductor, a second output end of the electrical module being connected with the first conductive plate, the electrical module being used to output a preset voltage to form a first alternating electromagnetic field between the first conductor and the first conductive plate, the first alternating electromagnetic field causing the photoelectric device array to be detected to electroluminesce; the imaging optical microscopic module is used to collect the light emission imaging information of the photoelectric device array to be detected. The present application makes the photoelectric device array to be detected parallel to the first conductor through various displacement mechanisms, and then during detection, the electromagnetic field intensity at each position corresponding to the detection area is consistent, avoiding the influence of the detection caused by the non-uniform emission of qualified light emitting points due to the inconsistent electromagnetic field intensity. The present application also makes the photoelectric device array to be detected parallel to the first optical lens, so that the radiation illuminance distribution of the light emitted by the detection area of the photoelectric device array to be detected on the first optical lens is uniform when the detection area electroluminesces, avoiding the non-uniformity of the originally uniform light emission of the detection area in imaging. 3. The present application controls the imaging optical microscopic module to collect the third imaging information of the photoelectric device array to be detected, and controls the optical vertical displacement mechanism and / or the support platform multi-axis displacement mechanism to adjust the distance between the first conductor and the photoelectric device array to be detected according to the third imaging information. The present application can adjust the distance between the first conductor and the photoelectric device array to be detected according to the unevenness of different regions of the photoelectric device to be detected, so as to ensure the stability of the alternating electric field and the imaging quality.4、The first imaging information includes a first imaging depth of field distribution, the first imaging depth of field distribution is used for determining the positional relationship between the first conductive body and the first optical lens; the second imaging information includes a second imaging depth of field distribution, the second imaging depth of field distribution is used for determining the positional relationship between the array of photoelectric devices to be detected and the first optical lens; the third imaging information includes a third imaging depth of field distribution, the third imaging depth of field distribution is used for determining the vertical distance between the array of photoelectric devices to be detected and the first optical lens. Because the blur degree presented by the distance between the object and the first optical lens is different, the depth of field, i.e. the distribution of the blur degree, is utilized to quickly and effectively determine the angle and the distance of displacement required for adjustment between the parts, thereby facilitating the implementation of the present application.

[0027] In summary, the present application can realize high-precision detection of the array of photoelectric devices in a non-contact and non-invasive manner. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 is a structural schematic diagram of a high-speed detection equipment for an array of photoelectric devices provided by an embodiment of the present application;

[0029] Figure 2 is a schematic diagram of automatic adjustment and correction of the high-speed detection equipment in a detection process provided by an embodiment of the present application;

[0030] Figure 3 is a top view structural schematic diagram of a first conductive body, a conductive body support frame, and a support frame vertical three-axis displacement mechanism provided by an embodiment of the present application;

[0031] Figure 4 is a structural schematic diagram of a conductive body provided by an embodiment of the present application;

[0032] Figure 5 is a schematic diagram of automatic correction and adjustment of a support frame vertical three-axis displacement mechanism provided by an embodiment of the present application;

[0033] Figure 6 is a schematic diagram of automatic correction and adjustment of a support platform multi-axis displacement mechanism provided by an embodiment of the present application;

[0034] Figure 7 is a schematic diagram of automatic correction and adjustment of an array of photoelectric devices to be detected in an irregular state provided by an embodiment of the present application;

[0035] Figure 8 is a structural schematic diagram of a high-speed detection equipment for an array of photoelectric devices provided by an embodiment of the present application, wherein the array of photoelectric devices to be detected is an array of thin-film solar cell devices;

[0036] Figure 9The high-speed detection equipment automatic adjustment and correction schematic diagram is provided when a thin-film solar cell device array is detected by the light-electricity device array provided by the embodiment of the present application.

[0037] Figure 10 The flowchart of the high-speed detection method of the light-electricity device array provided by the embodiment of the present application is shown. DETAILED DESCRIPTION

[0038] The high-speed detection method of the light-electricity device array is disclosed in the present application, and the person skilled in the art can refer to the content herein and appropriately improve the technical details for implementation. It is particularly pointed out that all similar replacements and changes are obvious to the person skilled in the art, and they are regarded as included in the present application. The method and application of the present application have been described by the preferred embodiments, and the related person can obviously make changes or appropriate changes and combinations to the method and application described herein without departing from the content, spirit and scope of the present application, to realize and apply the present application technology.

[0039] The applicant found that the light-electricity device array can be electroluminescent by the alternating electromagnetic field, and the imaging information of the electroluminescent light-electricity device array is collected, and the light-emitting condition of the light-electricity device array is obtained from the imaging information to realize the detection of the light-electricity device array. When the electrically conductive body for generating the electromagnetic field, the optical lens for detection and the light-electricity device are not parallel, the detection result accuracy will be reduced, mainly for the following reasons: 1. The light-electricity device array and the electrically conductive body are not parallel, which causes the electromagnetic field intensity at each position corresponding to the detection area of the light-electricity device array to be not completely consistent, so that the light-emitting of the detection area will be non-uniform, so that it is not possible to judge whether the non-uniform light-emitting is caused by the unqualified light-emitting point or the inconsistent electromagnetic field intensity. 2. The light-electricity device array and the optical lens are not parallel, which causes the light emitted by the detection area of the light-electricity device array to be inclined to irradiate on the optical lens, and the radiation illuminance distribution on the optical lens is not uniform, so that the detection area which originally emits light uniformly becomes non-uniform in the imaging.

[0040] Therefore, the embodiment of the present application provides a high-speed detection equipment of the light-electricity device array, such as Figure 1 and Figure 3As shown, the high-speed detection device comprises: a first support platform 301 for carrying an array of photoelectric devices to be detected, the first support platform 301 is mounted on a support platform multi-axis displacement mechanism 302, a first electrically conductive body 101 is arranged above the first support platform 301 and opposite to the first support platform 301, the first electrically conductive body 101 is mounted on an electrically conductive body support frame 102, the electrically conductive body support frame 102 is connected with a support frame vertical three-axis displacement mechanism 103, a first optical lens 201 is arranged above the electrically conductive body, the first optical lens 201 is mounted on an optical vertical displacement mechanism 202, a first light path module is arranged in the optical vertical displacement mechanism 202, and the first light path module is connected with the first optical lens 201.

[0041] The high-speed detection device further comprises an electrical module and an imaging optical microscopic module, a first output end of the electrical module is connected with the first electrically conductive body 101; in this embodiment, a second output end of the electrical module is connected with a first electrically conductive plate 104, and the electrical module is used to output a preset voltage to form a first alternating electromagnetic field between the first electrically conductive body 101 and the first electrically conductive plate 104, so that the array of photoelectric devices to be detected electroluminesces; the imaging optical microscopic module is used to collect the luminescence imaging information of the array of photoelectric devices to be detected. In another embodiment, the second output end of the electrical module is directly electrically connected with a common end of the array of photoelectric devices, and the electrical module is used to output a preset voltage to form a first alternating electromagnetic field between the first electrically conductive body and the common end of the array of photoelectric devices or the first electrically conductive plate, so that the array of photoelectric devices to be detected electroluminesces.

[0042] The detection device is configured to: in response to the first support platform 301 carrying the array of photoelectric devices to be detected, control the first light path module and the first optical lens 201 to collect first imaging information of the first electrically conductive body 101, and control the support frame vertical three-axis displacement mechanism 103 to adjust the first electrically conductive body 101 to be parallel to the first optical lens 201 according to the first imaging information; in response to the first electrically conductive body 101 being parallel to the first optical lens 201, control the first light path module and the first optical lens 201 to collect second imaging information of the array of photoelectric devices to be detected, and control the support platform multi-axis displacement mechanism 302 to adjust the array of photoelectric devices to be detected to be parallel to the first optical lens 201 according to the second imaging information; control the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected, and control the optical vertical displacement mechanism 202 and / or the support platform multi-axis displacement mechanism 302 to adjust the distance between the first electrically conductive body 101 and the array of photoelectric devices to be detected according to the third imaging information.

[0043] It should be noted that the support platform multi-axis displacement mechanism 302 can rotate around its central axis and adjust the inclination angle of the first support platform 301, so as to adjust the parallel relationship between the to-be-detected optoelectronic device array 400 and other components. Similarly, the support platform multi-axis displacement mechanism 302 can be parallelly displaced so that each region of the to-be-detected optoelectronic device array 400 can be displaced to below the first conductive body 101 for detection. The support frame vertical three-axis displacement mechanism 103 can adjust the inclination angle of the conductive body support frame 102, so as to adjust the inclination angle of the first conductive body 101. The optical vertical displacement mechanism 202 can move in the vertical direction to change the distance between the first optical lens 201 and the to-be-detected optoelectronic device array 400.

[0044] It is worth mentioning that the embodiment of the present application can compensate for the irregular spatial form of the optoelectronic device array without forming mechanical contact and mechanical damage to the optoelectronic device array, uniformly excite the optoelectronic device array to produce controllable light emission radiation, and thus determine the performance of the optoelectronic device.

[0045] In a specific embodiment, the support platform multi-axis displacement mechanism 302 can be displaced in the vertical direction to adjust the distance between the first optical lens 201 and the to-be-detected optoelectronic device array.

[0046] In a specific embodiment, the optical vertical displacement mechanism 202 can move in the horizontal direction to displace the first conductive body 101 above each region of the to-be-detected optoelectronic device array 400 for detection.

[0047] In a specific embodiment, the first conductive body 101, the first conductive plate 104, the conductive body support frame 102, and the support frame vertical three-axis displacement mechanism 103 constitute an electric field module, which is mainly used to form an alternating electromagnetic field for detecting the optoelectronic device array.

[0048] In a specific embodiment, the first optical lens 201, the first optical path module, and the optical vertical displacement mechanism 202 constitute a distance-adjustable imaging optical microscopic module, which is mainly used to collect component imaging effects and adjust the angles or distances of components according to the component imaging effects.

[0049] In a specific embodiment, the first support platform 301 and the support platform multi-axis displacement mechanism 302 constitute a support module. The support module is used to carry the to-be-detected optoelectronic device array 400. The support platform multi-axis displacement mechanism 302 can rotate the first support platform 301 in XYZ three-dimensional space, a horizontal plane, and a horizontal plane direction

[0050] In an embodiment, the imaging optical microscopic module is used for microscopic imaging and analysis of the light emitting condition of the array of optoelectronic devices to be detected 400, for identifying the positions of the optoelectronic devices that cannot work normally; and the imaging optical microscopic module is also used for appearance topography imaging and analysis of the array of optoelectronic devices to be detected 400.

[0051] In an embodiment, the electrical module comprises an alternating electromagnetic field excitation voltage source and a device power supply system; the alternating electromagnetic field excitation voltage source can generate a high-frequency high-power voltage signal with a time-varying amplitude and positive-negative relationship; the alternating electromagnetic field excitation voltage source comprises three terminals, two of which are voltage signal output terminals connected to a conductive body and a conductive plate respectively, and the other is a ground terminal connected to a common ground terminal of a high-speed detection device of an array of optoelectronic devices.

[0052] The embodiment of the present application makes the array of optoelectronic devices to be detected 400 parallel to the first conductive body 101, so that during detection, each position of the detection area is in a consistent electromagnetic field intensity, avoiding the influence of the detection caused by the non-uniform light emission of the qualified light emitting points due to the inconsistent electromagnetic field intensity. The embodiment of the present application also makes the array of optoelectronic devices to be detected 400 parallel to the first optical lens 201, so that the radiation illuminance distribution of the light emitted by the detection area of the array of optoelectronic devices to be detected 400 on the first optical lens 201 is uniform, avoiding the non-uniform imaging of the originally uniform light emitting detection area. The embodiment of the present application also adjusts the distance between the first conductive body 101 and the array of optoelectronic devices to be detected 400 in real time during the detection process, avoiding the detection influence caused by the uneven surface of the array of optoelectronic devices to be detected 400.

[0053] In an embodiment, the first imaging information comprises a first imaging depth of field distribution, the first imaging depth of field distribution is used to determine the positional relationship between the first conductive body 101 and the first optical lens 201; the second imaging information comprises a second imaging depth of field distribution, the second imaging depth of field distribution is used to determine the positional relationship between the array of optoelectronic devices to be detected 400 and the first optical lens 201; and the third imaging information comprises a third imaging depth of field distribution, the third imaging depth of field distribution is used to determine the vertical distance between the array of optoelectronic devices to be detected 400 and the first optical lens 201.

[0054] It should be noted that imaging is similar to image acquisition (photographic acquisition), the position at a certain distance from the optical lens has the best imaging quality and is the clearest, and exceeding or being insufficient to the distance will be blurred, and the greater the difference from the distance, the higher the blurriness. According to this point, the embodiment of the present application can obtain the positional relationship between the first optical lens 201, the first conductive body 101 and the array of optoelectronic devices to be detected through the depth of field distribution, i.e. the blurriness of each position in imaging. In this way, the three can be adjusted to be parallel according to the positional relationship.

[0055] In an embodiment, the better the imaging effect of a certain position, the closer the distance between the position and the optical lens to the optimal shooting distance.

[0056] In an embodiment, the imaging optical microscopic module comprises a second optical lens and a second optical path module, which are independently arranged and used to collect the third imaging information of the array of photoelectric devices to be detected during the detection process.

[0057] It should be noted that the imaging optical microscopic module can be independently arranged. When the imaging optical microscopic module is independently arranged, it can be arranged below the multi-axis displacement mechanism 302 of the support platform or above the array of photoelectric devices to be detected.

[0058] In an embodiment, the imaging optical microscopic module is a first optical lens 201 and a first optical path module, which are used to collect the third imaging information of the array of photoelectric devices to be detected during the detection process.

[0059] It should be noted that the first optical lens 201 and the first optical path module can also be used as the imaging optical microscopic module to collect the third imaging information of the array of photoelectric devices to be detected during the detection process. In this way, the structure of the high-speed detection device can be simplified and the cost can be reduced.

[0060] In an embodiment, the surface of the first conductive body 101 is provided with a plurality of periodically arranged and mutually insulated sub-conductive bodies; a conductive layer or a semi-conductive layer is connected between the sub-conductive bodies and the first conductive body 101; and the surface state of the sub-conductive bodies includes a metal conductive state, a semiconductor conductive state, a high-resistance state, an insulating dielectric layer state, a low-vacuum state, a high-vacuum state, a liquid state, a liquid crystal state, and a plasma state.

[0061] In an embodiment, the array of photoelectric devices to be detected includes light-emitting diodes, light-emitting triodes, nanocrystal light-emitting devices, perovskite light-emitting devices, liquid crystal light-emitting devices, electronic paper light-emitting devices, solar cells, photodetectors, and thin-film batteries; and the array of photoelectric devices to be detected has a common electrical terminal and / or an independent electrical terminal.

[0062] In an embodiment, the first conductive plate 104 is independently arranged on the first support platform 301 or the first conductive plate 104 is a common electrical terminal of the array of photoelectric devices to be detected; a first medium or direct contact exists between the array of photoelectric devices to be detected and the first conductive plate 104; and the first medium includes a liquid, a gas, a vacuum environment, and a plasma.

[0063] In an embodiment, the surface of the first conductive body 101 opposite to the first conductive plate 104 can be a flat surface or a surface with regular or irregular concave-convex structure; the surface state of the first conductive body 101 can be, but is not limited to, a metal conductive state, a semiconductor conductive state, a high resistance state, an insulating dielectric layer state, a low vacuum state, a high vacuum state, a liquid state, a liquid crystal state, or a plasma state.

[0064] In an embodiment, the first conductive body 101 and the conductive body support frame 102 are transparent in the light-emitting wavelength range used by the high-speed detection device for the optoelectronic device array; the first support platform 301 and the support platform multi-axis displacement mechanism 302 are transparent in the light-emitting wavelength range used by the high-speed detection device for the optoelectronic device array.

[0065] In an embodiment, the high-speed detection device further comprises an automatic sampling module for placing the optoelectronic device array 400 to be detected on the first support platform 301 or removing the optoelectronic device array 400 to be detected from the first support platform 301.

[0066] According to the above-mentioned high-speed detection device for the optoelectronic device array, the embodiments of the present application further provide a high-speed detection method for the optoelectronic device array, which is applied to the high-speed detection device for the optoelectronic device array, as shown in the following Figure 10 , comprising:

[0067] Step S1, in response to the first support platform 301 carrying the optoelectronic device array 400 to be detected, controlling the first light path module and the first optical lens 201 to collect first imaging information of the first conductive body 101; and controlling the support frame vertical three-axis displacement mechanism 103 to adjust the first conductive body 101 to be parallel to the first optical lens 201 according to the first imaging information.

[0068] Further, the optoelectronic device array 400 to be detected is arranged in a preset direction;

[0069] Step S2, in response to the first conductive body 101 being parallel to the first optical lens 201, controlling the first light path module and the first optical lens 201 to collect second imaging information of the optoelectronic device array 400 to be detected; and controlling the support platform multi-axis displacement mechanism 302 to adjust the optoelectronic device array 400 to be detected to be parallel to the first optical lens 201 according to the second imaging information.

[0070] Step S3, controlling the optical vertical displacement mechanism 202 and / or the support platform multi-axis displacement mechanism 302 to adjust the vertical distance between the first conductive body 101 and the optoelectronic device array 400 to be detected to a first distance.

[0071] Step S4, control the electrical module to output a preset voltage to form a first alternating electromagnetic field between the first conductive body 101 and the first conductive plate 104; control the imaging optical microscopic module to collect fourth imaging information of the array of photoelectric devices to be detected 400; and determine whether the corresponding region of the first conductive body 101 in the array of photoelectric devices to be detected 400 is qualified according to the fourth imaging information.

[0072] Step S5, control the multi-axis displacement mechanism 302 of the support platform to move so that the next detection region of the array of photoelectric devices to be detected 400 corresponds to the first conductive body 101; control the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected 400, and control the optical vertical displacement mechanism 202 and / or the multi-axis displacement mechanism 302 of the support platform to adjust the distance between the first conductive body 101 and the array of photoelectric devices to be detected 400 according to the third imaging information.

[0073] Step S6, in response to the distance between the first conductive body 101 and the array of photoelectric devices to be detected 400 reaching a second distance, control the imaging optical microscopic module to collect fifth imaging information of the array of photoelectric devices to be detected 400; and determine whether the corresponding region of the first conductive body 101 in the array of photoelectric devices to be detected 400 is qualified according to the fifth imaging information.

[0074] Step S7, repeat steps S5 and S6 until all regions of the array of photoelectric devices to be detected 400 are detected.

[0075] Figure 2 Adjustment process for steps 1 and S2.

[0076] As shown in Figure 4 , in this embodiment, the surface of the first conductive body 101 is provided with a plurality of periodically arranged sub-conductive bodies 1011 which are insulated from each other; the sub-conductive bodies 1011 are connected with a semi-conductive layer 1012 (as shown in part A of Figure 4 ) or a resistor 1013 (as shown in part B of Figure 4 ).

[0077] As shown in Figure 5 , in this embodiment, the first support platform 301; the multi-axis displacement mechanism 302 of the support platform, and the array of photoelectric devices to be detected 400 are planar structures. When the support frame vertical three-axis displacement mechanism 103, the conductive body support frame 102, and the first conductive body 101 are inclined, the high-speed detection device will automatically detect the degree of deviation of the support frame vertical three-axis displacement mechanism 103, the conductive body support frame 102, and the first conductive body 101 and automatically correct it.

[0078] As shown in Figure 6As shown, in this embodiment, the vertical three-axis displacement mechanism 103 of the support frame, the conductive support frame 102, the first conductive body 101, and the optoelectronic device array 400 to be tested are planar structures. When the first support platform 301 and the multi-axis displacement mechanism 302 of the support platform are tilted, the high-speed detection equipment will automatically detect the degree of offset of the first support platform 301 and the multi-axis displacement mechanism 302 of the support platform and automatically correct it.

[0079] like Figure 7 As shown, the surface of the optoelectronic device array 400 to be tested has an irregular uneven structure. When the height of the surface of the optoelectronic device array 400 to be tested increases or decreases, the vertical three-axis displacement mechanism 103 of the support frame, the conductive support frame 102, the first conductive body 101, the first optical path module and the vertical displacement system of the adjustable optical direction, and the first optical lens 201 will automatically adjust their height according to the degree of undulation of the surface of the optoelectronic device array 400 to be tested, so that the first conductive body 101 and the optoelectronic device array 400 to be tested maintain a corresponding horizontal height.

[0080] When the optoelectronic device array 400 to be tested is a thin-film solar cell array, the corresponding high-speed detection equipment is the same as in other embodiments. The corresponding detection steps can be as follows:

[0081] Step A: In response to the first support platform 301 carrying the array of thin-film solar cell devices to be tested, control the first optical path module and the first optical lens 201 to acquire the first imaging information of the first conductor 101; according to the first imaging information, control the vertical three-axis displacement mechanism 103 of the support frame to adjust the first conductor 101 to be parallel with the first optical lens 201.

[0082] Step B: In response to the parallelism between the first conductor 101 and the first optical lens 201, control the first optical path module and the first optical lens 201 to acquire the second imaging information of the thin-film solar cell device array to be tested; according to the second imaging information, control the multi-axis displacement mechanism 302 of the support platform to adjust the thin-film solar cell device array to be tested to be parallel with the first optical lens 201.

[0083] Step C: Control the optical vertical displacement mechanism 202 and / or the support platform multi-axis displacement mechanism 302 to adjust the vertical distance between the first conductor 101 and the thin-film solar cell device array to be tested to the first distance.

[0084] Step D: Control the electrical module to output a preset voltage to form a first alternating electromagnetic field between the first conductor 101 and the first conductive plate 104; control the imaging optical microscopy module to acquire the fourth imaging information of the thin-film solar cell device array to be tested; and determine whether the area corresponding to the first conductor 101 in the thin-film solar cell device array to be tested is qualified based on the fourth imaging information.

[0085] Step E, control the multi-axis displacement mechanism 302 of the support platform to move so that the next detection area of the thin-film solar cell device array to be detected corresponds to the first conductive body 101; control the imaging optical microscopic module to collect the third imaging information of the thin-film solar cell device array to be detected, and control the optical vertical displacement mechanism 202 and / or the multi-axis displacement mechanism 302 of the support platform to adjust the distance between the first conductive body 101 and the thin-film solar cell device array to be detected according to the third imaging information.

[0086] Step F, in response to the distance between the first conductive body 101 and the thin-film solar cell device array to be detected reaching a second distance, control the imaging optical microscopic module to collect the fifth imaging information of the thin-film solar cell device array to be detected; and determine whether the corresponding area of the first conductive body 101 in the thin-film solar cell device array to be detected is qualified according to the fifth imaging information.

[0087] Step G, repeat steps E and F until all areas of the thin-film solar cell device array to be detected are detected.

[0088] In this embodiment, the first conductive body 101 is provided with a plurality of periodically arranged and mutually insulated sub-conductive bodies on the surface; and the surface state of the sub-conductive body is in a high vacuum state.

[0089] In this embodiment, the first conductive body 101 and the conductive body support frame 102 have transparency in the wavelength range of light emitted by the high-speed detection equipment for the thin-film solar cell device array, and the visible light transmittance is >80%.

[0090] In this embodiment, the thin-film solar cell device array includes but is not limited to silicon-based thin-film solar cells, perovskite thin-film solar cells, and compound thin-film solar cells.

[0091] As shown in Figure 8 and Figure 9 In this embodiment, when the support frame vertical three-axis displacement mechanism 103, the conductive body support frame 102, the first conductive body 101, the first support platform 301, the multi-axis displacement mechanism 302 of the support platform, and the thin-film solar cell array 4011 to be detected are inclined, the high-speed detection equipment automatically detects the inclined part of the entire device and automatically corrects the corresponding part.

[0092] Compared with the prior art, the high-speed detection device provided by the embodiment of the application can detect without contacting the photoelectric device array and causing mechanical damage to the device array, the principle of which is to avoid the decrease of detection accuracy caused by the unevenness of the photoelectric device array 400 to be detected or the warping of the support platform by compensating for the irregular spatial form of the photoelectric device array, and then using an alternating electromagnetic field excitation voltage source to generate a high-frequency high-power voltage signal with a time-varying amplitude and positive-negative relationship, so as to excite the photoelectric device array to generate controllable light emission radiation, and finally successfully determine the performance of the photoelectric device. The device avoids the mechanical damage caused by the contact device to the photoelectric device in the traditional photoelectric device detection process, and has higher detection accuracy, which effectively guarantees the yield of product manufacturing in modern industry.

[0093] The high-speed detection device of the embodiment of the application comprises: a first support platform 301 comprising a first conductive plate 104, the first support platform 301 being used for carrying a photoelectric device array 400 to be detected, the first support platform 301 being mounted on a support platform multi-axis displacement mechanism 302, a first electrically conductive body 101 corresponding to the first conductive plate 104 being arranged above the first support platform 301, the first electrically conductive body 101 being mounted on an electrically conductive body support frame 102, the electrically conductive body support frame 102 being connected with a support frame vertical three-axis displacement mechanism 103, a first optical lens 201 being arranged above the electrically conductive body, the first optical lens 201 being mounted on an optical vertical displacement mechanism 202, a first light path module being arranged in the optical vertical displacement mechanism 202, the first light path module being connected with the first optical lens 201; the high-speed detection device further comprises an electrical module and an imaging optical microscopic module, a first output end of the electrical module being connected with the first electrically conductive body 101, a second output end of the electrical module being connected with the first conductive plate 104, the electrical module being used for outputting a preset voltage to form a first alternating electromagnetic field between the first electrically conductive body 101 and the first conductive plate 104, the first alternating electromagnetic field causing the photoelectric device array 400 to be detected to electroluminescence; the imaging optical microscopic module is used for collecting the light emission imaging information of the photoelectric device array 400 to be detected. The various displacement mechanisms described above are used to make the photoelectric device array 400 to be detected parallel to the first electrically conductive body 101, and then during detection, the electromagnetic field intensity at each position corresponding to the detection area is consistent, so that the qualified light emission points are not affected by the non-uniform light emission caused by the inconsistent electromagnetic field intensity, thereby affecting the detection. The embodiment of the application also makes the photoelectric device array 400 to be detected parallel to the first optical lens 201, so that the radiation illuminance distribution of the light emitted by the detection area of the photoelectric device array 400 to be detected on the first optical lens 201 is uniform when the detection area electroluminescence, thereby avoiding the detection area which originally emits light uniformly becoming non-uniform in imaging.

[0094] The embodiment of the present application controls the imaging optical microscope module to collect third imaging information of the array of photoelectric devices to be detected, and controls the optical vertical displacement mechanism 202 and / or the multi-axis displacement mechanism 302 of the support platform to adjust the distance between the first conductive body 101 and the array of photoelectric devices to be detected according to the third imaging information. The embodiment of the present application can adjust the distance between the first conductive body 101 and the array of photoelectric devices to be detected according to the unevenness of different regions of the photoelectric device to be detected, so as to ensure the stability of the alternating electric field and the imaging quality.

[0095] The first imaging information includes a first imaging depth of field distribution, which is used to determine the positional relationship between the first conductive body 101 and the first optical lens 201; the second imaging information includes a second imaging depth of field distribution, which is used to determine the positional relationship between the array of photoelectric devices to be detected and the first optical lens 201; and the third imaging information includes a third imaging depth of field distribution, which is used to determine the vertical distance between the array of photoelectric devices to be detected and the first optical lens 201. Because the blur degree presented by the distance between the object and the first optical lens 201 is different, the embodiment of the present application uses the depth of field, i.e., the distribution of the blur degree, to quickly and effectively determine the angle and the displacement distance that need to be adjusted between each part, which is beneficial to the implementation of the embodiment of the present application.

[0096] In summary, the embodiment of the present application can realize high-precision detection of the array of photoelectric devices in a non-contact and non-damage manner.

[0097] It should be noted that the relational terms herein such as first and second and the like are used only to differentiate one entity or operation from another, and do not necessarily require or imply that any such actual relationship or order exists between or among the entities or operations. Moreover, the terms "include", "contain" or any other variant thereof are intended to cover a non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the phrase "including a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.

[0098] Each embodiment in the specification is described in a relevant manner, and the same or similar parts between each embodiment can be referred to each other, and each embodiment mainly explains the difference from other embodiments. Especially, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the part of the method embodiment.

[0099] The above merely provides the preferred embodiment of the present application, and not intended to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall fall within the protection scope of the present application.

Claims

1. A high speed inspection apparatus for an array of optoelectronic devices, characterized in that, The high-speed detection device comprises a first support platform for carrying an array of photoelectric devices to be detected, the first support platform is carried on a support platform multi-axis displacement mechanism, a first conductor is arranged above the first support platform and opposite to the first support platform, the first conductor is carried on a conductor support frame, the conductor support frame is connected with a support frame vertical three-axis displacement mechanism, a first optical lens is arranged above the conductor, the first optical lens is carried on an optical vertical displacement mechanism, a first light path module is arranged in the optical vertical displacement mechanism, and the first light path module is connected with the first optical lens; The high-speed detection device further comprises an electrical module and an imaging optical microscopic module, a first output end of the electrical module is connected with the first conductor, a second output end of the electrical module is directly connected with a common end of the array of photoelectric devices or is connected with the common end of the array of photoelectric devices through a first conductive plate arranged on the first support platform, the electrical module is used to output a preset voltage to form a first alternating electromagnetic field between the first conductor and the common end of the array of photoelectric devices or the first conductive plate, and the first alternating electromagnetic field causes the array of photoelectric devices to be detected to electroluminescence; and the imaging optical microscopic module is used to collect light emission imaging information of the array of photoelectric devices to be detected. The detection device is configured to: in response to the first support platform carrying the array of photoelectric devices to be detected, control the first light path module and the first optical lens to collect first imaging information of the first conductor, control the support frame vertical three-axis displacement mechanism to adjust the first conductor to be parallel to the first optical lens according to the first imaging information; in response to the first conductor being parallel to the first optical lens, control the first light path module and the first optical lens to collect second imaging information of the array of photoelectric devices to be detected, control the support platform multi-axis displacement mechanism to adjust the array of photoelectric devices to be detected to be parallel to the first optical lens according to the second imaging information; control the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected, and control the optical vertical displacement mechanism and / or the support platform multi-axis displacement mechanism to adjust the distance between the first conductor and the array of photoelectric devices to be detected according to the third imaging information.

2. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, characterized in that, The first imaging information comprises a first imaging depth of field distribution, the first imaging depth of field distribution is used to determine the positional relationship between the first conductor and the first optical lens; the second imaging information comprises a second imaging depth of field distribution, the second imaging depth of field distribution is used to determine the positional relationship between the array of photoelectric devices to be detected and the first optical lens; and the third imaging information comprises a third imaging depth of field distribution, the third imaging depth of field distribution is used to determine the vertical distance between the array of photoelectric devices to be detected and the first optical lens.

3. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The imaging optical microscopic module comprises a second optical lens and a second optical path module which are independently arranged and used for collecting the third imaging information of the array of photoelectric devices to be detected during the detection of the array of photoelectric devices to be detected.

4. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The imaging optical microscopic module comprises the first optical lens and the first optical path module which are used for collecting the third imaging information of the array of photoelectric devices to be detected during the detection of the array of photoelectric devices to be detected.

5. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The surface of the first conductive body is provided with a plurality of periodically arranged sub-conductive bodies which are insulated from each other; a conductive layer or a semi-conductive layer is connected between the sub-conductive bodies and the first conductive body; and the surface state of the sub-conductive body includes a metal conductive state, a semiconductor conductive state, a high resistance state, an insulating dielectric layer state, a low vacuum state, a high vacuum state, a liquid state, a liquid crystal state and a plasma state.

6. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The array of photoelectric devices to be detected includes light emitting diodes, light emitting triodes, nanocrystal light emitting devices, perovskite light emitting devices, liquid crystal light emitting devices, electronic paper light emitting devices, solar cells, photoelectric detectors and thin film batteries; and the array of photoelectric devices to be detected has a common electrical terminal and / or an independent electrical terminal.

7. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The first conductive plate is independently arranged on the first support platform or is a common electrical terminal of the array of photoelectric devices to be detected; and a first medium or direct contact exists between the array of photoelectric devices to be detected and the first conductive plate; wherein the first medium includes gas, vacuum environment, liquid and plasma.

8. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The first conductive body and the conductive body support frame have transparency in the light emitting wavelength range used by the high-speed detection equipment of the array of photoelectric devices; and the first support platform and the support platform multi-axis displacement mechanism have transparency in the light emitting wavelength range used by the high-speed detection equipment of the array of photoelectric devices.

9. The high speed detection apparatus of an array of optoelectronic devices according to claim 1, wherein, The high-speed detection equipment further comprises an automatic sampling module which is used for placing the array of photoelectric devices to be detected on the first support platform or taking the array of photoelectric devices to be detected away from the first support platform.

10. A method of high speed testing of an array of optoelectronic devices, characterized in that, The method is applied to the high-speed detection equipment of the array of photoelectric devices according to any one of claims 1 to 9 and comprises the following steps: Step S1: in response to the first support platform bearing the array of photoelectric devices to be detected, controlling the first optical path module and the first optical lens to collect first imaging information of the first conductive body; and controlling a vertical three-axis displacement mechanism of the support frame to adjust the first conductive body to be parallel to the first optical lens according to the first imaging information; Step S2: in response to the first conductive body being parallel to the first optical lens, controlling the first optical path module and the first optical lens to collect second imaging information of the array of photoelectric devices to be detected; and controlling a multi-axis displacement mechanism of the support platform to adjust the array of photoelectric devices to be detected to be parallel to the first optical lens according to the second imaging information; Step S3: in response to the array of photoelectric devices to be detected being parallel to the first optical lens, controlling the first optical path module and the first optical lens to collect third imaging information of the array of photoelectric devices to be detected; and controlling the multi-axis displacement mechanism of the support platform to adjust the array of photoelectric devices to be detected to be perpendicular to the first optical lens according to the third imaging information; and Step S4: in response to the array of photoelectric devices to be detected being perpendicular to the first optical lens, controlling the first optical path module and the first optical lens to collect fourth imaging information of the array of photoelectric devices to be detected; and controlling the vertical three-axis displacement mechanism of the support frame to adjust the first conductive body to be perpendicular to the first optical lens according to the fourth imaging information. Step S3, controlling the optical vertical displacement mechanism and / or the support platform multi-axis displacement mechanism to adjust the vertical distance between the first conductive body and the array of photoelectric devices to be detected to a first distance; Step S4, controlling the electrical module to output a preset voltage to form a first alternating electromagnetic field between the first conductive body and the first conductive plate; controlling the imaging optical microscopic module to collect fourth imaging information of the array of photoelectric devices to be detected; and determining whether the corresponding region of the first conductive body in the array of photoelectric devices to be detected is qualified according to the fourth imaging information; Step S5, controlling the support platform multi-axis displacement mechanism to move so that the next detection region of the array of photoelectric devices to be detected corresponds to the first conductive body; controlling the imaging optical microscopic module to collect third imaging information of the array of photoelectric devices to be detected, and controlling the optical vertical displacement mechanism and / or the support platform multi-axis displacement mechanism to adjust the distance between the first conductive body and the array of photoelectric devices to be detected according to the third imaging information; Step S6, in response to the distance between the first conductive body and the array of photoelectric devices to be detected reaching a second distance, controlling the imaging optical microscopic module to collect fifth imaging information of the array of photoelectric devices to be detected; and determining whether the corresponding region of the first conductive body in the array of photoelectric devices to be detected is qualified according to the fifth imaging information; Step S7, repeating steps S5 and S6 until all regions of the array of photoelectric devices to be detected are detected.

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