RF front-end modules and communication equipment

Abstract

The present application discloses a radio frequency front-end module and communication equipment, wherein the radio frequency front-end module includes a power amplifier circuit, a bias circuit for providing a bias signal for the power amplifier circuit, and a protection circuit connected to the bias circuit; wherein the protection circuit is configured so that the clamping value on the output branch connected to the bias circuit of the protection circuit has a first correlation with the temperature within a first temperature range, and has a second correlation with the temperature within a third temperature range, the first correlation and the second correlation have different correlations with the temperature, and the minimum value of the third temperature range is greater than the maximum value of the first temperature range. The radio frequency front-end module provided by the present application can appropriately compensate and clamp the bias circuit according to different ambient temperatures to effectively improve the working stability of the radio frequency front-end module.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a radio frequency front-end module and communication equipment. Background Art

[0002] With the maturity and popularization of wireless transmission technology, many communication devices, such as mobile phones, laptops or wireless network cards, are usually equipped with radio frequency front-end modules to transmit wireless signals.

[0003] With the diversification of application environments, communication equipment has increasingly higher requirements for RF front-end modules. For example, in harsh environments such as high or low temperatures, the safe operating area of ​​the power devices in the RF front-end module will be reduced. Even when the operating current on the power device exceeds the maximum current of the device, it will cause irreversible damage or destruction to the power device. Summary of the Invention

[0004] Based on this, the embodiments of the present application provide a radio frequency front-end module and communication equipment, which aim to protect the circuits or devices in the radio frequency front-end module under different ambient temperatures, so as to effectively improve the stability and reliability of the radio frequency front-end module and avoid damage to the circuits or devices in the radio frequency front-end module.

[0005] In a first aspect, an embodiment of the present application provides a radio frequency front-end module comprising:

[0006] A power amplifier circuit, a bias circuit for providing a bias signal to the power amplifier circuit, and a protection circuit connected to the bias circuit;

[0007] In which, the protection circuit is configured so that the clamping value on the output branch connected to the bias circuit of the protection circuit has a first correlation with the temperature within a first temperature range and a second correlation with the temperature within a third temperature range, the first correlation and the second correlation have different correlations with the temperature, and the minimum value of the third temperature range is greater than the maximum value of the first temperature range.

[0008] In a second aspect, an embodiment of the present application provides a radio frequency front-end module, including:

[0009] A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit;

[0010] The maximum value of the bias signal output by the bias circuit has a fifth correlation with the temperature in the first temperature range, and the maximum value of the bias signal output by the bias circuit has a sixth correlation with the temperature in the third temperature range. The fifth correlation is different from the sixth correlation, and the minimum value of the third temperature range is greater than the maximum value of the first temperature range.

[0011] In a third aspect, an embodiment of the present application provides a radio frequency front-end module, comprising: a power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit;

[0012] The second end of the bias circuit is configured to be connected to a protection circuit, and the protection circuit is configured to make the clamping value on the output branch connected to the bias circuit have a first relationship with the temperature in the target temperature range;

[0013] The first end of the bias circuit is configured to be connected to a bias control circuit, and the bias control circuit is configured to make the bias source signal on the output branch of the bias circuit and the bias control circuit have a second relationship with the temperature in the target temperature range; the first relationship and the second relationship are different;

[0014] The third terminal of the bias circuit is configured to be connected to the power amplifier circuit and output a bias signal to the power amplifier circuit.

[0015] In a fourth aspect, an embodiment of the present application provides a radio frequency front-end module, comprising: a power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit;

[0016] A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit;

[0017] The bias circuit is connected to a protection circuit, and the protection circuit is configured such that a clamping value on an output branch connected to the protection circuit and the bias circuit is positively correlated with temperature within a first temperature range, wherein a maximum value of the first temperature range is less than a first temperature threshold;

[0018] And / or, the protection circuit is configured such that the clamping value of the bias circuit and the output branch of the protection circuit is negatively correlated with the temperature within a third temperature range, wherein the minimum value of the third temperature range is greater than the second temperature threshold.

[0019] In a fourth aspect, an embodiment of the present application provides a radio frequency front-end module, comprising: a substrate, and a first chip and a second chip disposed on the substrate; the first chip comprising a power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; the second chip comprising a protection circuit, the protection circuit being connected to the bias circuit;

[0020] The protection circuit is configured such that a clamping value on an output branch connected to the protection circuit and the bias circuit has a first correlation with temperature within a first temperature range;

[0021] And / or, the protection circuit is configured so that the clamping value on the output branch connected to the protection circuit and the bias circuit has a second correlation with the temperature within the third temperature range, and the minimum value of the third temperature range is greater than the maximum value of the first temperature range.

[0022] In a sixth aspect, the present application also provides a communication device, which includes the aforementioned RF front-end module and an antenna module connected to the RF front-end module.

[0023] It can be seen from the above embodiments that the clamping value on the output branch of the protection circuit in the RF front-end module provided by the present application can change with the change of temperature in different first temperature ranges and / or third temperature ranges, so that the bias signal output by the bias circuit will also change with the change of the clamping value in the first temperature range and the third temperature range, so that the circuits or devices in the RF front-end module can always operate in a safe working area under different working environments of the RF front-end module, thereby protecting the circuits or devices in the RF front-end module, so as to effectively avoid the performance deterioration of the power amplifier due to excessively high or low temperature, thereby effectively improving the stability and reliability of the RF front-end module.

[0024] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 This is a block diagram of the radio frequency front-end module provided in an embodiment of the present application;

[0027] Figure 2 This is a schematic diagram of the structure of a bias circuit structure in cooperation with a protection circuit and a power amplifier circuit in a radio frequency front-end module provided in an embodiment of the present application;

[0028] Figures 3A to 4B A schematic diagram of the circuit structure showing the interaction between various variations of the power amplifier circuit and bias circuit in the RF front-end module;

[0029] Figure 5 This is a schematic diagram of a specific circuit structure of a temperature compensation circuit in a protection circuit of a radio frequency front-end module provided in an embodiment of the present application;

[0030] Figure 6The RF front-end module provided in the embodiment of the present application adopts Figure 5 Schematic diagram of the correlation between the compensation signal, clamping signal and temperature in the protection circuit in the case of the temperature compensation circuit shown;

[0031] Figure 7 This is a schematic diagram showing the correlation between the compensation signal, clamping signal, and temperature corresponding to the temperature compensation drift that may occur in some protection circuits under high temperature conditions;

[0032] Figure 8 It is a specific circuit structure diagram of the switch control module;

[0033] Figure 9 This is a schematic diagram of a modified circuit structure of a temperature compensation circuit provided in an embodiment;

[0034] Figure 10 yes Figure 9 A schematic diagram of the relationship between the compensation signal output to the compensation node and the temperature in the deformed circuit structure;

[0035] Figure 11 and Figure 12 Schematic diagrams of circuit structures of various variations of temperature compensation circuits;

[0036] Figure 13 The RF front-end module provided in the embodiment of the present application adopts Figure 12 Schematic diagram of the correlation between the compensation signal, clamping signal and temperature in the protection circuit in the case of the temperature compensation circuit shown;

[0037] Figure 14 This is a specific circuit structure diagram of the clamping circuit in the protection circuit of the RF front-end module;

[0038] Figure 15 This is a structural diagram of another bias circuit structure in the RF front-end module provided by an embodiment of the present application, in cooperation with a protection circuit and a power amplifier circuit;

[0039] Figure 16 This is a schematic diagram of the correlation between the bias source signal and temperature in the bias control circuit;

[0040] Figure 17 This is a block diagram of an electronic device provided by this application. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0042] It should be noted that the descriptions of "first", "second", etc. in this application are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0043] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they can refer to fixed connections, removable connections, or integral connections. They can refer to mechanical connections or electrical connections. They can refer to direct connections or indirect connections through an intermediary. They can refer to internal communication between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention based on specific circumstances.

[0044] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, combined, or partially merged, so the actual execution order may vary depending on the actual situation.

[0045] The following describes some embodiments of the present application in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features therein may be combined with each other.

[0046] See also Figure 1 , Figure 1 A circuit structure block diagram of a radio frequency front-end module provided in an embodiment of the present application.

[0047] like Figure 1 As shown, the RF front-end module 1 includes a protection circuit 100, a bias circuit 200, and a power amplifier circuit 300. The bias circuit 200 is connected to the power amplifier circuit 300 and is used to provide a bias signal for the power amplifier circuit 300, and the bias signal affects the output power and linearity of the power amplifier circuit 300.

[0048] The protection circuit 100 is connected to the bias circuit 200, and the protection circuit 100 is configured such that a clamping value on an output branch connected to the bias circuit 200 has a first relationship with temperature within a target temperature range. Specifically, the protection circuit 100 is connected to the bias circuit 200 such that the clamping signal can be used to limit the maximum value of the bias signal output by the bias circuit 200, and the clamping value on the output branch connected to the bias circuit 200 is related to the temperature within the corresponding target temperature range.

[0049] Optionally, the target temperature range includes at least a first temperature range and a third temperature range, and the minimum value of the third temperature range is greater than the maximum value of the first temperature range, and the first relationship includes a first correlation relationship and a second correlation relationship. The first correlation relationship and the second correlation relationship may be the same or different. The clamping value on the output branch connected to the bias circuit 200 of the protection circuit 100 has a first correlation relationship with the temperature within the first temperature range, and has a second correlation relationship with the temperature within the third temperature range.

[0050] For example, if the first correlation is negatively correlated with temperature, i.e., the clamping value on the output branch of the protection circuit 100 is negatively correlated with temperature, then the second correlation is positively correlated with temperature, i.e., the clamping value on the output branch of the protection circuit is positively correlated with temperature. In other words, in the first temperature range, the higher the temperature, the smaller the clamping value on the output branch of the protection circuit 100; conversely, the lower the temperature, the larger the clamping value on the output branch of the protection circuit 100; in the third temperature range, the higher the temperature, the larger the clamping value on the output branch of the protection circuit 100; conversely, the lower the temperature, the smaller the clamping value on the output branch of the protection circuit 100.

[0051] Alternatively, if the first correlation is a positive correlation with temperature, i.e., the clamping value on the output branch of the protection circuit 100 is positively correlated with temperature, then the second correlation is a negative correlation with temperature, i.e., the clamping value on the output branch of the protection circuit is negatively correlated with temperature. That is, in the first temperature range, the higher the temperature, the larger the clamping value on the output branch of the protection circuit 100; conversely, the lower the temperature, the smaller the clamping value on the output branch of the protection circuit 100. In the third temperature range, the higher the temperature, the smaller the clamping value on the output branch of the protection circuit 100; conversely, the lower the temperature, the larger the clamping value on the output branch of the protection circuit 100.

[0052] Optionally, the target temperature range further includes a second temperature range, within which the clamping value on the output branch of the protection circuit 100 is independent of the temperature, and the second temperature range is between the first temperature range and the third temperature range.

[0053] It can be seen from the above embodiments that the clamping value on the output branch of the protection circuit 100 in the RF front-end module 1 provided in the present application can change with the change of temperature in different first temperature ranges and third temperature ranges, so that the bias signal output by the bias circuit 200 in the first temperature range and the third temperature range will also change with the change of the clamping value, so that the circuits or devices in the RF front-end module can always operate in a safe working area under different working environments of the RF front-end module, thereby protecting the circuits or devices in the RF front-end module, so as to effectively avoid the performance deterioration of the power amplifier due to excessively high or low temperature, thereby effectively improving the stability and reliability of the RF front-end module.

[0054] See also Figure 2 The bias circuit 200 is connected to the output branch of the protection circuit 100, and the clamping value on the output branch connected to the bias circuit changes with temperature. The magnitude of the bias signal output by the bias circuit 200 is related to the magnitude of the clamping value corresponding to the clamping signal. The clamping value can change with temperature within the corresponding target temperature range.

[0055] Optionally, the maximum value of the bias signal output by the bias circuit 200 is less than or equal to the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100. That is, it can be understood that the maximum value of the bias signal output by the bias circuit 200 has a fifth correlation with the temperature in the first temperature range, and the maximum value of the bias signal output by the bias circuit 200 has a sixth correlation with the temperature in the third temperature range. The fifth and sixth correlations may be the same or different, and the minimum value in the third temperature range is greater than the maximum value in the first temperature range.

[0056] Among them, the fifth correlation and the first correlation have the same correlation with temperature, and the sixth correlation and the second correlation have the same correlation with temperature, that is, when the first correlation is negatively correlated with temperature, the fifth correlation is also negatively correlated with temperature, and when the first correlation is positively correlated with temperature, the fifth correlation is also positively correlated with temperature.

[0057] Similarly, when the second correlation is negatively correlated with the temperature, the sixth correlation is also negatively correlated with the temperature; and when the second correlation is positively correlated with the temperature, the sixth correlation is also positively correlated with the temperature.

[0058] Optionally, in the fifth correlation, the maximum value of the bias signal output by the bias circuit 200 is negatively correlated with the temperature, and in the sixth correlation, the maximum value of the bias signal output by the bias circuit 200 is positively correlated with the temperature. That is, in the first temperature range, the higher the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200; conversely, the lower the temperature, the larger the maximum value of the bias signal output by the bias circuit 200. In the third temperature range, the higher the temperature, the larger the maximum value of the bias signal output by the bias circuit 200; conversely, the lower the temperature, the smaller the maximum value of the bias signal output by the bias circuit 200.

[0059] Alternatively, in the fifth correlation, the maximum value of the bias signal output by bias circuit 200 is positively correlated with temperature, while in the sixth correlation, the maximum value of the bias signal output by bias circuit 200 is negatively correlated with temperature. That is, in the first temperature range, the higher the temperature, the larger the maximum value of the bias signal output by bias circuit 200, while conversely, the lower the temperature, the smaller the maximum value of the bias signal output by bias circuit 200. In the third temperature range, the higher the temperature, the smaller the maximum value of the bias signal output by bias circuit 200, while conversely, the lower the temperature, the larger the maximum value of the bias signal output by bias circuit 200.

[0060] Optionally, the target temperature range further includes a second temperature range, within which the maximum value of the bias signal output by the bias circuit 200 is independent of the temperature, and the second temperature range is between the first temperature range and the third temperature range.

[0061] like Figure 2 As shown, in some embodiments, the second end of the bias circuit 200 is configured to be connected to the protection circuit 100, the third end of the bias circuit 200 is configured to be connected to the power amplifier circuit 300 and output a bias signal to the power amplifier circuit, and the first end of the bias circuit 200 is configured to receive a bias source signal. The magnitude of the bias source signal is independent of temperature, that is, the bias source signal is a constant value and does not change with changes in temperature. Alternatively, the magnitude of the bias source signal is temperature-dependent, that is, the magnitude of the bias source signal can change with changes in temperature, which is not limited here.

[0062] The bias circuit 200 has at least a bias amplification state and a saturation state. When the bias circuit 200 is in the bias amplification state, the magnitude of the bias signal output by the bias circuit 200 is related to the bias source signal received by the first terminal (bias control terminal). When the bias circuit 200 is in the saturation state, the bias signal output by the bias circuit 200 is clamped to a clamping value corresponding to the clamping signal output by the output branch of the protection circuit 100. That is, when the bias circuit 200 is in the saturation state, the maximum value of the bias signal output by the bias circuit 200 is equal to the clamping value corresponding to the clamping signal. In other words, by setting the clamping value on the output branch connected to the bias circuit 200 by the protection circuit 100, the maximum value of the bias signal output by the bias circuit 200 can be effectively limited, thereby preventing the power amplifier circuit 300 from receiving a bias signal output by the bias circuit 200 that exceeds a threshold, thereby preventing irreversible damage to components in the branch where the power amplifier circuit 300 is located.

[0063] The power amplifier circuit 300 is connected to the output terminal of the bias circuit 200 and is configured to receive the bias signal output by the bias circuit 200 and the RF input signal, and output an RF output signal. The output power of the power amplifier circuit 300 is related to the magnitude of the bias signal output by the bias circuit 200. For example, the output power within the effective amplification range of the power amplifier circuit 300 is positively correlated with the magnitude of the bias signal. The clamp signal is a current signal, and the bias signal can be either a bias voltage or a bias current.

[0064] like Figure 2 As shown, for example, the bias circuit 200 includes a bias transistor 201. A first terminal of the bias circuit 200 is a first terminal of the bias transistor 201, and the first terminal of the bias transistor 201 is configured to receive a bias source signal. A second terminal of the bias circuit 200 is a second terminal of the bias transistor 201, and the second terminal of the bias transistor 201 is configured to be connected to the output branch of the protection circuit 100. A third terminal of the bias circuit 200 is a third terminal of the bias transistor 201, and the third terminal of the bias transistor 201 is connected to the power amplifier circuit and configured to output a bias signal to the power amplifier circuit.

[0065] The bias transistor 201 can be a bipolar transistor or a field-effect transistor. If the bias transistor 201 is a bipolar transistor, the first terminal of the bias transistor 201 is the base, the second terminal of the bias transistor 201 is the collector, and the third terminal of the bias transistor 201 is the emitter. If the bias transistor 201 is a field-effect transistor, the first terminal of the bias transistor 201 is the gate, the second terminal of the bias transistor 201 is the source, and the third terminal of the bias transistor 201 is the drain.

[0066] like Figure 2As shown, in some embodiments, the bias circuit 200 further includes a first capacitor C1. The first end of the first capacitor C1 is connected to the second end of the bias transistor 201, and the second end of the first capacitor C1 is grounded.

[0067] For example, the clamping value corresponding to the clamping signal on the output branch where the protection circuit 100 is connected to the bias circuit 200 has a first correlation with temperature in the first temperature range and a second correlation with temperature in the second temperature range.

[0068] As Figure 2 shown, taking the clamping signal as the clamping current Iclamp as an example for illustration, based on the fact that the clamping value magnitude on the output branch where the protection circuit is connected to the bias circuit is related to temperature, that is, the clamping current Iclamp can change with the change of temperature, that is, the magnitude of the clamping current Iclamp input to the second end of the bias transistor 201 changes with the change of temperature. Further, the maximum value of the bias signal output by the bias circuit 200 is less than or equal to the clamping value corresponding to the clamping signal.

[0069] When β*IREF < Iclamp, the bias transistor 201 is in the bias amplification state, and the current value flowing through the bias transistor 201 is β*IREF. That is, the magnitude of the bias signal output by the bias circuit 200 is related to the bias source signal received by the bias control terminal.

[0070] When β*IREF > Iclamp of the bias transistor 201, the bias transistor 201 is in the saturation state, so that the bias circuit 200 is in the saturation state. At this time, the current flowing through the second end of the bias transistor 201 is clamped to be equal to the clamping current Iclamp, and the current value flowing through the bias transistor 201 is also equal to the clamping value corresponding to the clamping signal. Among them, β = IC / IB, that is, β is the amplification factor of the bias transistor 201, IC is the collector current of the bias transistor, and / IB is the base current of the bias transistor.

[0071] It can be seen from the above embodiments that the magnitude of the bias signal output by the bias circuit 200 is related to the clamping value on the output branch where the protection circuit is connected to the bias circuit. By clamping the current at the second end of the bias transistor to be equal to the clamping current Iclamp, the bias transistor can be turned off without outputting a bias signal, or the magnitude of the bias signal output by the bias transistor can be limited to a certain preset value, thereby achieving over-current protection of the power amplifier circuit.

[0072] When the bias circuit 200 is in a saturated state, the maximum value of the bias signal output by the bias circuit 200 is clamped to the clamping value corresponding to the clamping signal on the output branch of the protection circuit 100. By setting the clamping signal output by the protection circuit 100, the maximum value of the bias circuit output by the bias circuit 200 can be effectively limited, thereby preventing the power amplifier circuit 300 from causing irreversible damage to the power device in the amplifier circuit 300 due to the bias signal output by the bias circuit 200 exceeding the threshold. In this way, under different working environments of the RF front-end module 1, the circuits or devices in the RF front-end module 1 can always operate in a safe working area, thereby protecting the circuits or devices in the RF front-end module 1, and effectively avoiding the performance degradation of the power amplifier due to excessively high or low temperature, thereby effectively improving the stability and reliability of the RF front-end module 1.

[0073] See also Figure 3A In some embodiments, the bias circuit 200 has a first output terminal and a second output terminal. The power amplifier circuit 300 includes a first amplifying branch 301 and a second amplifying branch 302. The first output terminal of the bias circuit 200 is connected to the input terminal of the first amplifying branch 301 and is configured to output a first bias signal to the first amplifying branch 301. The second output terminal of the bias circuit 200 is connected to the input terminal of the second amplifying branch 302 and is configured to output a second bias signal to the second amplifying branch 302; wherein the maximum value of the first bias signal output by the bias circuit 200 is less than or equal to the clamping value; and the maximum value of the second bias signal output by the bias circuit 200 is less than or equal to the clamping value.

[0074] It is understandable that the first bias signal outputted from the first output terminal of the bias circuit 200 and the second bias signal outputted from the second output terminal may be bias signals of the same magnitude or of different magnitudes, as long as the maximum values ​​of the first bias signal and the second bias signal are both less than the clamping value corresponding to the clamping signal on the output branch connecting the bias circuit 200 to the protection circuit 100.

[0075] See also Figure 3B In some embodiments, the power amplifier circuit 300 includes a first amplifier branch 301 and a second amplifier branch 302 , and the bias circuit 200 includes a first bias circuit 200 a and a second bias circuit 200 b .

[0076] The protection circuit 100 is connected to a first bias circuit 200a and a second bias circuit 200b, respectively. The output of the first bias circuit 200a is connected to the input of the first amplifying branch 301 and is configured to output a first bias signal to the first amplifying branch 301. The output of the second bias circuit 200b is connected to the input of the second amplifying branch 302 and is configured to output a second bias signal to the second amplifying branch 302. The maximum value of the first bias signal output by the first bias circuit 200a is less than or equal to a clamping value, and the maximum value of the second bias signal output by the second bias circuit 200b is less than or equal to the clamping value.

[0077] It is understandable that the first bias signal output by the first bias circuit 200a and the second bias signal output by the second bias circuit 200b can be bias signals of the same magnitude or bias signals of different magnitudes, as long as the maximum values ​​of the first bias signal and the second bias signal are both less than the clamping value corresponding to the clamping signal on the output branch connected to the protection circuit 100 of the bias circuit.

[0078] Optionally, Figure 3B The first bias circuit 200a and the second bias circuit 200b and Figure 2 The bias circuit 200 in FIG. 1 has the same circuit structure and will not be described in detail here.

[0079] See also Figure 4A In some embodiments, the power amplifier circuit 300 includes a first-stage amplifier circuit 300a and a second-stage amplifier circuit 300b connected in series. A first output terminal of the bias circuit 200 is connected to an input terminal of the first-stage amplifier circuit 300a and is configured to output a first bias signal to the first-stage amplifier circuit 300a. A second output terminal of the bias circuit 200 is connected to an input terminal of the second-stage amplifier circuit 300b and is configured to output a second bias signal to the second-stage amplifier circuit 300b. The maximum value of the first bias signal output by the bias circuit 200 is less than or equal to a clamping value, and the maximum value of the second bias signal output by the bias circuit 200 is less than or equal to the clamping value.

[0080] See also Figure 4BIn some embodiments, the power amplifier circuit 300 includes a first-stage amplifier circuit 300a and a second-stage amplifier circuit 300b connected in series. The bias circuit 200 includes a first bias circuit 200a and a second bias circuit 200b. The protection circuit 100 is connected to the first bias circuit 200a and the second bias circuit 200b, respectively. The output of the first bias circuit 200a is connected to the input of the first-stage amplifier circuit 300a and is configured to output a first bias signal to the first-stage amplifier circuit 300a. The output of the second bias circuit 200b is connected to the input of the second-stage amplifier circuit 300b and is configured to output a second bias signal to the second-stage amplifier circuit 300b. The maximum value of the first bias signal output by the first bias circuit 200a is less than or equal to a clamping value, and the maximum value of the second bias signal output by the second bias circuit 200b is less than or equal to the clamping value.

[0081] Optionally, Figure 4B The first bias circuit 200a and the second bias circuit 200b and Figure 2 The bias circuit 200 in FIG. 1 has the same circuit structure and will not be described in detail here.

[0082] like Figure 1 As shown, in some embodiments, the protection circuit 100 includes a temperature compensation circuit 110 and a clamping circuit 120 , the clamping circuit 120 is connected to the branch where the compensation node of the temperature compensation circuit 110 is located, and the output end of the clamping circuit 120 is connected to the bias circuit 200 .

[0083] The temperature compensation circuit 110 is configured to output a corresponding compensation signal to the compensation node within a target temperature range. The compensation signal includes a first compensation signal or a second compensation signal. The first compensation signal has a third correlation with the temperature within the first temperature range, and the second compensation signal has a fourth correlation with the temperature within the third temperature range. The clamping circuit 120 is configured to cause the bias circuit 200 and the clamping value on the output branch of the clamping circuit 120 to have a first correlation with the temperature within the first temperature range based on the first compensation signal, and to cause the bias circuit 200 and the clamping value on the output branch of the clamping circuit 120 to have a second correlation with the temperature within the third temperature range based on the second compensation signal.

[0084] Optionally, in the third correlation, the compensation signal outputted by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature, and in the fourth correlation, the compensation signal outputted by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature.

[0085] Alternatively, in the third correlation, the compensation signal outputted by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature, and in the fourth correlation, the compensation signal outputted by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature.

[0086] Optionally, the clamping circuit 120 is configured to, based on either the first compensation signal or the second compensation signal, cause the clamping value corresponding to the clamping signal outputted from the output branch of the clamping circuit 120 to be less than or equal to a first threshold. The first threshold may be set based on the tolerance of power devices in the power amplifier circuit 300 to electrical signals such as voltage and current. Furthermore, because the tolerance of power devices in the power amplifier circuit 300 to electrical signals varies under different temperature environments, the first threshold may have different values ​​under different temperature conditions. Furthermore, the first threshold corresponding to the third temperature range is smaller than the threshold corresponding to the first temperature range, and the first threshold corresponding to the second temperature range is smaller than the threshold corresponding to the third temperature range. For example, in the first temperature range, the first threshold is set to 9 mA, in the second temperature range, the first threshold is set to 10 mA, and in the third temperature range, the first threshold is set to 8 mA.

[0087] In at least one embodiment, when at room temperature (for example, 10°C-50°C), the average current output by Vbatt of the bias transistor is 10 mA; when in a first temperature range (low temperature) (for example, less than 10°C), the first threshold is set to be less than 10 mA (for example, 9 mA); when in a third temperature range (high temperature) (for example, greater than 50°C), the first threshold is set to be less than 10 mA (for example, 8 mA); thereby preventing components in the branch where the power amplifier circuit is located (for example, power amplifier, filter) from being damaged due to excessive current or power in high or low temperature environments.

[0088] See also Figure 5 and Figure 6 , Figure 5 This is a schematic diagram of the specific circuit structure of the first embodiment of the temperature compensation circuit provided in the embodiments of the present application.

[0089] like Figure 5 and Figure 6 As shown, the temperature compensation circuit 110 is provided with a compensation node (such as compensation node D) for connecting the clamping circuit 120, and the temperature compensation circuit 110 includes at least one first temperature compensation module 10, at least one second temperature compensation module 20, a switch module 30 connecting the first temperature compensation module 10 and the second temperature compensation module 20, and a power supply module 40.

[0090] The first temperature compensation module 10 is configured to output a first compensation signal to the compensation node within a first temperature range, wherein the first compensation signal has a third correlation with the temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node within a third temperature range, wherein the second compensation signal has a fourth correlation with the temperature.

[0091] The switch module 30 is at least used to connect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in a first temperature range, and disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in a third temperature range.

[0092] The output end of the power module 40 is connected to the compensation node or the branch where the compensation node is located, and is used to provide a basic electrical signal to the supplementary node. The basic electrical signal can be a basic voltage or a basic current.

[0093] In some embodiments, the compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 of the temperature compensation circuit 110 in a second temperature range are independent of temperature, and the second temperature range is between the first temperature range and the third temperature range.

[0094] Optionally, the compensation signals output by the first temperature compensation module 10 and the second temperature compensation module 20 in the second temperature range are zero.

[0095] like Figure 5 As shown, for example, the first temperature compensation module 10 is further configured to receive a first positive temperature coefficient current and a first zero temperature coefficient current. The first positive temperature coefficient current and the first zero temperature coefficient current enable the first temperature compensation module 10 to output a first compensation signal to the compensation node within a first temperature range. The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current. The second positive temperature coefficient current and the second zero temperature coefficient current enable the second temperature compensation module 20 to output a second compensation signal to the compensation node within a third temperature range.

[0096] The first positive temperature coefficient current is the current output by a first positive temperature coefficient power supply A1 connected to the first temperature compensation module 10. The first positive temperature coefficient power supply A1 may be a positive temperature coefficient current source. The first zero temperature coefficient current is the current output by a first zero temperature coefficient power supply B1 connected to the first temperature compensation module 10. The first zero temperature coefficient power supply B1 may be a zero temperature coefficient current source. The magnitude of the first positive temperature coefficient current is positively correlated with temperature. The magnitude of the first zero temperature coefficient current is independent of temperature.

[0097] The second positive temperature coefficient current is the current output by a second positive temperature coefficient power supply A2 connected to the second temperature compensation module 20. The second positive temperature coefficient power supply A2 may be a positive temperature coefficient current source. The second zero temperature coefficient current is the current output by a second zero temperature coefficient power supply B2 connected to the second temperature compensation module 20. The second zero temperature coefficient power supply B2 may be a zero temperature coefficient current source. The magnitude of the second positive temperature coefficient current is positively correlated with temperature. The magnitude of the second zero temperature coefficient current is independent of temperature.

[0098] like Figure 5 As shown, the first positive temperature coefficient current output by the first positive temperature coefficient power supply A1 and the first zero temperature coefficient current output by the first zero temperature coefficient power supply B1 are controllable, and the second positive temperature coefficient current output by the second positive temperature coefficient power supply A2 and the second zero temperature coefficient current output by the second zero temperature coefficient power supply B2 are controllable. It is only necessary to ensure that within the first temperature range, the first temperature compensation module 10 can output a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current. Within the third temperature range, the second temperature compensation module 20 can output a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0099] In this embodiment, the magnitudes of the first positive temperature coefficient current and the second positive temperature coefficient current are both positively correlated with temperature, and the magnitudes of the first zero temperature coefficient current and the second zero temperature coefficient current are both independent of temperature.

[0100] For example, the minimum value of the first temperature interval is t0 and the maximum value is t1. The minimum value of the third temperature interval is t2 and the maximum value is t3, then t3>t2>t1>t0, and t1 is less than the first temperature threshold, and t2 is greater than the second temperature threshold.

[0101] For example, the interval temperature value corresponding to the first temperature interval is (t0-t1], the interval temperature value corresponding to the second temperature interval is (t1-t2), and the interval temperature value corresponding to the third temperature interval is [t2-t3]. Among them, the values ​​corresponding to t0, t1, t2, and t3 can be set as needed. Optionally, the first temperature threshold is set to 20°C and the second temperature threshold is set to 30°C, then t1 can be set to any value between -40°C and 20°C, and t2 can be set to any value between 30°C and 125°C. For example, t1 can be -5°C, 0°C, or 10°C, and t2 can be 35°C, 40°C, or 50°C. It can be understood that the values ​​corresponding to t0, t1, t2, and t3 can also be set as needed.

[0102] In the first temperature interval (t0-t1], the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current, and the second temperature compensation module 20 does not output a compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0103] In the second temperature range (t1-t2), the first temperature compensation module 10 does not output a compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current. Furthermore, the second temperature compensation module 20 does not output a compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0104] In the third temperature interval [t2-t3), the second temperature compensation module 20 outputs a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current. Optionally, in the third temperature interval [t2-t3), the first temperature compensation module 10 does not output a compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0105] In some embodiments, the second temperature range is determined by the correlation characteristic between the current and temperature corresponding to the target temperature coefficient current, and the target temperature coefficient current includes a first positive temperature coefficient current, a first zero temperature coefficient current, a second positive temperature coefficient current, and a second zero temperature coefficient current.

[0106] Optionally, the temperature value corresponding to when the first positive temperature coefficient current is equal to the first zero temperature coefficient current is the minimum temperature value of the second temperature interval. The temperature value corresponding to when the second positive temperature coefficient current is equal to the second zero temperature coefficient current is the maximum temperature value of the second temperature interval.

[0107] When the first positive temperature coefficient current is equal to the first zero temperature coefficient current, the corresponding temperature value is the minimum temperature value t1 of the second temperature interval. When the second zero temperature coefficient current is equal to the second positive temperature coefficient current, the corresponding temperature value is the maximum temperature value t2 of the second temperature interval.

[0108] In the above embodiment, it can be seen that the temperature compensation circuit 110 provided in the embodiment of the present application can output a compensation signal to the clamping circuit 120, and the compensation signal output by the temperature compensation circuit 110 to the clamping circuit 120 can change with the change of temperature. Therefore, the clamping value corresponding to the clamping signal output on the output branch of the clamping circuit 120 will change with the change of the compensation signal output by the temperature compensation circuit to the compensation node.

[0109] Therefore, in a scenario where the protection circuit 100 is applied to a power amplifier, by connecting the bias circuit 200 to the protection circuit 100, the clamping value on the output branch connecting the protection circuit and the bias circuit can be used as a bias pre-signal (e.g., a bias source signal or a bias control signal), so that the bias circuit 200 can output a bias signal that changes with temperature to the power amplifier circuit 300. That is, the bias signal output by the bias circuit 200 is limited to be less than or equal to the clamping value, so as to avoid the performance degradation of the power amplifier due to excessively high or low temperature, thereby effectively improving the stability and reliability of the RF front-end module.

[0110] At the same time, in order to achieve the accuracy of the compensation signal output by the temperature compensation circuit 110 of the protection circuit 100 to the compensation node under different temperature conditions, the temperature compensation circuit 110 provided in the present application is in the first temperature range, and the first temperature compensation module 10 outputs the first compensation signal to the compensation node, and in the third temperature range, the second temperature compensation module 20 outputs the second compensation signal to the compensation node, and the first compensation signal and the temperature have a third correlation, the second compensation signal and the temperature have a fourth correlation, and the third correlation and the fourth correlation have different correlations with the temperature, so that the temperature compensation circuit 110 can output compensation signals with different relationships with the temperature in different temperature ranges, making the application scenarios of the temperature compensation circuit 110 more diverse.

[0111] Furthermore, the maximum value of the bias signal output by the bias circuit 200 is equal to the clamping value corresponding to the clamping signal on the output branch connecting the protection circuit 100 and the bias circuit 200. That is, by setting the clamping value corresponding to the clamping signal on the output branch connecting the protection circuit 100 and the bias circuit 200, the maximum value of the bias signal output by the bias circuit 200 can be effectively limited. This can prevent the power amplifier circuit 300 from causing irreversible damage to components (e.g., power devices or filter devices) in the branch where the amplifier circuit 300 is located due to the bias signal output by the bias circuit 200 exceeding the threshold value.

[0112] Furthermore, under high temperature conditions, such as the third temperature range, the first temperature compensation module 10 may leak the compensation signal to the compensation node. This signal leakage may affect the accuracy of the electrical signal at the compensation node of the temperature compensation circuit 110 in the third temperature range. Therefore, the temperature compensation circuit 110 of the present application is provided with a switch module 30. The switch module 30 connects the first temperature compensation module 10 and the second temperature compensation module 20. The switch module conducts the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the first temperature range, and disconnects the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 in the third temperature range. This effectively prevents the first temperature compensation module 10 from leaking the compensation signal to the compensation node in the third temperature range, which could affect the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node in the third temperature range. This improves the accuracy and reliability of the compensation signal output by the temperature compensation circuit 110 to the compensation node, thereby achieving higher-precision temperature compensation.

[0113] In some embodiments, the switch module 30 is further configured to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 within the second temperature range.

[0114] Optionally, the switch module 30 is used to open the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 when the temperature is less than or equal to a first temperature threshold, and to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 when the temperature is greater than the first temperature threshold; wherein the first temperature threshold is less than the maximum temperature value of the third temperature interval and greater than the maximum temperature value of the first temperature interval.

[0115] That is, at least in the third temperature range, the switch module 30 disconnects the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, thereby preventing the first temperature compensation module 10 from outputting a signal to the compensation node. Alternatively, in part of the second temperature range and in the third temperature range, the switch module 30 disconnects the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, thereby preventing the first temperature compensation module 10 from outputting a compensation signal to the compensation node.

[0116] In this embodiment, in order to avoid the problem of the first temperature compensation module 10 leaking the compensation signal to the compensation node in the second temperature range and to improve the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node, the present application controls the switch module in the second temperature range to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so as to effectively avoid the first temperature compensation module 10 leaking the compensation signal to the compensation node in the second temperature range.

[0117] For ease of understanding, the following description is made by taking the compensation signal outputted to the compensation node by the temperature compensation circuit 110 as a compensation current as an example.

[0118] like Figure 5 and Figure 6 In some embodiments, the protection circuit further includes a power module 40. The power module 40 includes an operational amplifier 401 and a voltage divider 402. The first terminal of the operational amplifier 401 is connected to the output terminal of the operational amplifier 401. The output terminal of the amplifier 401 is also connected to the first terminal of the voltage divider 402. The second terminal of the voltage divider 402 is connected to the compensation node or the path where the compensation node is located. The second terminal of the operational amplifier 401 is configured to receive a predetermined electrical signal, such as the voltage signal VBG. Optionally, the voltage divider 402 includes, but is not limited to, a resistor.

[0119] The preset electrical signal VBG is a constant value, the resistance value of the voltage divider unit 402 is R, the potential of point C in the power module 40 is VBG, and the voltage value at the compensation node is VOUT. Therefore, VOUT = VBG - IOUT * R, where IOUT is the compensation current input to the compensation node by the temperature compensation circuit 110.

[0120] Therefore, in the first temperature range, IOUT decreases as temperature increases, so VOUT increases with temperature, and VOUT has a positive temperature coefficient. In the second temperature range, IOUT is zero, and VOUT = VBG. In the third temperature range, IOUT increases as temperature increases, so VOUT decreases with temperature, and VOUT has a negative temperature coefficient.

[0121] That is, in the first temperature range, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a third correlation with the temperature, then the correlation between the corresponding compensation voltage at the compensation node and the temperature is different from the third correlation between the first compensation signal (compensation current) and the temperature.

[0122] Moreover, in the third temperature range, if the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node has a fourth correlation with the temperature, then the correlation between the corresponding compensation voltage at the compensation node and the temperature is different from the fourth correlation between the first compensation signal (compensation current) and the temperature, and the third correlation and the fourth correlation have different correlations with the temperature.

[0123] That is, in the first temperature range, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature, then the corresponding compensation voltage at the compensation node is negatively correlated with the temperature. Furthermore, in the third temperature range, the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature, while the corresponding compensation voltage at the compensation node is positively correlated with the temperature.

[0124] Alternatively, in the first temperature range, if the first compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature, then the corresponding compensation voltage at the compensation node is positively correlated with the temperature. Furthermore, in the third temperature range, the second compensation signal (compensation current) output by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature, and the corresponding compensation voltage at the compensation node is negatively correlated with the temperature.

[0125] like Figure 5 and Figure 6 As shown, in some embodiments, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is used to receive a first positive temperature coefficient current, and the first zero temperature compensation unit 102 is used to receive a first zero temperature coefficient current; in the first temperature range, the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0126] Exemplarily, the first positive temperature compensation unit 101 includes a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 includes a third transistor N1 and a fourth transistor N2, wherein the controlled ends of the first transistor P1 and the second transistor P2 are used to be connected to a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is used to output a first positive temperature coefficient current; the controlled ends of the third transistor N1 and the fourth transistor N2 are used to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is used to output a first zero temperature coefficient current.

[0127] In addition, the first end of the first transistor P1 is used to connect to the power supply VDD, the second end of the first transistor P1 is connected to the first end of the second transistor P2, the second end of the second transistor P2 is connected to the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, and the first end of the third transistor N1 is connected to the switch module 30 and is connected to the branch where the compensation point is located through the switch module 30.

[0128] Furthermore, in the first temperature range, the first transistor P1, the second transistor P2, the third transistor N1, and the fourth transistor N2 are in the on state, and the first temperature compensation module 10 outputs the first compensation signal to the compensation node via the third transistor N1. In the second and third temperature ranges, no current is output to the compensation node via the third transistor N1, and the third transistor N1 is equivalently in the off state.

[0129] Optionally, the first transistor P1 and the second transistor P2 are first-type transistors, the third transistor N1 and the fourth transistor N2 are the same-type transistors, and the third transistor N1 and the fourth transistor N2 are second-type transistors different from the first-type transistors. For example, the first-type transistor is a PMOS transistor, and the second-type transistor is an NMOS transistor.

[0130] like Figure 5 As shown, in some embodiments, the second temperature compensation module 20 includes a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected to the second positive temperature compensation unit 201. The second positive temperature compensation unit 201 is configured to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is configured to receive a second zero temperature coefficient current. In the third temperature range, after receiving the second positive temperature coefficient current and the second zero temperature coefficient current, the second temperature compensation module 20 outputs a second compensation signal to the compensation node.

[0131] Exemplarily, the second positive temperature compensation unit 201 includes a fifth transistor N3 and a sixth transistor N4, and the second zero temperature compensation unit 202 includes a seventh transistor P3 and an eighth transistor P4, wherein the controlled ends of the fifth transistor N3 and the sixth transistor N4 are used to be connected to a second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is used to output a second positive temperature coefficient current; the controlled ends of the seventh transistor P3 and the eighth transistor P4 are used to be connected to a second zero temperature coefficient power supply, and the second zero temperature coefficient power supply is used to output a second zero temperature coefficient current.

[0132] In addition, the first end of the seventh transistor P3 is used to connect to the power supply, the second end of the seventh transistor P3 is connected to the first end of the eighth transistor P4, the second end of the eighth transistor P4 is connected to the second end of the fifth transistor N3 and the first end of the sixth transistor N4, the second end of the sixth transistor N4 is grounded, and the first end of the fifth transistor N3 is connected to the branch where the switching module and the compensation point are located.

[0133] Furthermore, in the third temperature range, the fifth transistor N3, the sixth transistor N4, the seventh transistor P3, and the eighth transistor P4 are in an on state, and the second temperature compensation module 20 outputs the second compensation signal to the compensation node via the fifth transistor N3. In the first temperature range and the second temperature range, no current is output to the compensation node via the fifth transistor N3, which is equivalent to the fifth transistor N3 being in an off state.

[0134] Optionally, the fifth transistor N3 and the sixth transistor N4 are third-type transistors, the seventh transistor P3 and the eighth transistor P4 are fourth-type transistors, and the seventh transistor P3 and the eighth transistor P4 are fourth-type transistors different from the third-type transistors. For example, the third-type transistor is an NMOS transistor, and the fourth-type transistor is a PMOS transistor.

[0135] like Figure 5 and Figure 6 As shown, the first positive temperature coefficient power supply A1 is used to output a first positive temperature coefficient current to the first transistor P1 and the second transistor P2, and the first zero temperature coefficient power supply B1 is used to output a first zero temperature coefficient current to the third transistor N1 and the fourth transistor N2, wherein the magnitudes of the first positive temperature coefficient current and the first zero temperature coefficient current can be set as needed.

[0136] The second positive temperature coefficient power supply A2 is used to output a second positive temperature coefficient current to the seventh transistor N3 and the eighth transistor N4, and the second zero temperature coefficient power supply B2 is used to output a second zero temperature coefficient current to the fifth transistor P3 and the sixth transistor P4. The magnitudes of the second positive temperature coefficient current and the second zero temperature coefficient current can be set as needed.

[0137] In the first temperature interval (t0-t1], the first positive temperature coefficient current is output to the first transistor P1 and the second transistor P2, and the first zero temperature coefficient current is output to the third transistor N1 and the fourth transistor N2, so that the first transistor P1, the second transistor P2, the third transistor N1, and the fourth transistor N2 are in the on state. According to the first positive temperature coefficient current, the first zero temperature coefficient current, and the inherent coefficients of the first transistor P1, the second transistor P2, the third transistor N1, and the fourth transistor N2, the magnitude of the current IP2 flowing through the second transistor P2 and the magnitude of the current IN2 flowing through the fourth transistor N2 can be calculated.

[0138] like Figure 6 As shown, the current IP2 flowing through the second transistor P2 is positively correlated with temperature. Within the corresponding target temperature range, IP2 increases with increasing temperature. The current IN2 flowing through the fourth transistor N2 is independent of temperature and does not change with temperature.

[0139] Furthermore, based on the fact that IN2>IP2 in the first temperature interval (t0-t1], it can be seen that the fourth transistor N2 is in a saturated state, and the compensation current output by the first temperature compensation module 10 to the compensation node D can be regarded as the current IN1 flowing through the third transistor N1. According to Kirchhoff's law, IN1=IN2-|IP2|, that is, in the first temperature interval (t0-t1], the compensation current output by the first temperature compensation module 10 to the compensation node D is the difference between the current IN2 flowing through the fourth transistor N2 and the absolute value of the current |IP2| flowing through the second transistor P2.

[0140] In the first temperature range (t0-t1], as the temperature increases, IP2 increases and IN2 remains unchanged, so IN1 decreases. That is, in the first temperature range (t0-t1], as the temperature increases, the compensation current output by the first temperature compensation module 10 to the compensation node D gradually decreases. That is, the compensation current (IN1) output by the first temperature compensation module 10 to the compensation node D is negatively correlated with the temperature.

[0141] At the same time, within the first temperature range (t0-t1), according to the second positive temperature coefficient current, the second zero temperature coefficient current, and the intrinsic coefficients of the fifth transistor P3, the sixth transistor P4, the seventh transistor N3, and the eighth transistor N4, the current IP4 flowing through the sixth transistor P4 and the current IN4 flowing through the eighth transistor N4 can be calculated.

[0142] The current IN4 flowing through the eighth transistor N4 is positively correlated with temperature and increases with increasing temperature within the corresponding target temperature range. The current IP4 flowing through the sixth transistor P4 is independent of temperature and does not change with temperature.

[0143] In the first temperature range (t0-t1), IP4≥IN4, indicating that the eighth transistor N4 is in a saturated state, the seventh transistor P3 and the eighth transistor P4 enter the linear region, and IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero. That is, no current is output to the compensation node through the seventh transistor N3. Therefore, the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the first temperature range is zero.

[0144] Similarly, if Figure 6 As shown, in the second temperature range (t1-t2), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2. Since the magnitude of IP2 is positively correlated with temperature, the magnitude of IN2 is independent of temperature.

[0145] It can be seen from IP2≥IN2 that the fourth transistor N2 is in a saturated state, IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero. At this time, it can be regarded as the third transistor N1 is disconnected, that is, no current is output to the compensation node through the third transistor N1, so the compensation signal (compensation current) output by the first temperature compensation module 20 to the compensation node D in the second temperature range is zero.

[0146] At the same time, within the second temperature range (t1-t2), the current IP4 flowing through the sixth transistor P4 is greater than or equal to the current IN4 flowing through the eighth transistor N4. Since IP4≥IN4, it can be seen that the seventh transistor P3 and the eighth transistor P4 enter the linear region, the eighth transistor N4 is in a saturation state, and IP4 is configured to be equal to IN4, so that the current IN3 flowing through the seventh transistor N3 is equal to zero. At this time, it can be regarded as the seventh transistor N3 being disconnected, that is, no current is output to the compensation node through the seventh transistor N3. Therefore, the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the second temperature range is zero.

[0147] Similarly, if Figure 6 As shown, in the third temperature range [t2-t3), the current IP2 flowing through the second transistor P2 is greater than or equal to the current IN2 flowing through the fourth transistor N2. Since the magnitude of IP2 is positively correlated with temperature, the magnitude of IN2 is independent of temperature.

[0148] It can be seen from IP2≥IN2 that the fourth transistor N2 is in a saturated state, the first transistor P1 and the second transistor P2 enter the linear region, and IP2 is configured to be equal to IN2, so that the current IN1 flowing through the third transistor N1 is equal to zero. At this time, it can be regarded as the third transistor N1 is disconnected, that is, no current passes through the third transistor N1 and is output to the compensation node. Therefore, the compensation signal (compensation current) output by the first temperature compensation module 20 to the compensation node D in the third temperature range is zero.

[0149] At the same time, within the third temperature interval [t2-t3), the current IP4 flowing through the sixth transistor P4 is less than the current IN4 flowing through the eighth transistor N4. Since IN4 ≥ IP4, it can be seen that the eighth transistor N4 is in a saturated state, and the compensation current output by the second temperature compensation module 20 to the compensation node D can be regarded as the current IN3 flowing through the seventh transistor N3. According to Kirchhoff's law, IN3 = IN4 - |IP4|, that is, within the third temperature interval [t2-t3), the compensation current output by the second temperature compensation module 10 to the compensation node D is the difference between the absolute values ​​of the current IN4 flowing through the eighth transistor N4 and the current IP4 flowing through the sixth transistor P4.

[0150] In the third temperature interval [t2-t3), as the temperature increases, IP4 remains unchanged and IN4 increases, and IN3 increases. That is, in the third temperature interval [t2-t3), as the temperature increases, the compensation current output by the second temperature compensation module 20 to the compensation node D gradually increases. That is, the compensation current (IN3) output by the second temperature compensation module 20 to the compensation node D is positively correlated with the temperature.

[0151] See also Figure 7 Typically, in the third temperature range, only the second temperature compensation module 20 needs to output the second compensation signal to the compensation node. At this time, the compensation signal is positively correlated with the temperature, and the second correlation is shown as a straight line X1.

[0152] However, in the third temperature range, when the field effect transistor threshold voltage (also called threshold voltage) VTH corresponding to the third transistor N1 of the first temperature compensation module 10 is less than the preset value, for example, the field effect transistor threshold voltage corresponding to the third transistor N1 in the third temperature range is less than the field effect transistor threshold voltage corresponding to the third transistor N1 in the first temperature range, at this time, the third transistor N1, which should have been in a saturated state, will be turned on, so that part of the compensation current will be output to the compensation node through the third transistor N1 in the third temperature range. At this time, since the first temperature compensation module 10 outputs a compensation signal to the compensation node, the second correlation between the compensation signal and the temperature becomes as shown in curve X2, thereby affecting the accuracy of the compensation signal output by the temperature compensation circuit in the third temperature range.

[0153] In the present application, the first temperature compensation module 10 and the second temperature compensation module 20 are connected through a switch module, and within the first temperature range, the switch module conducts the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, and at least within the third temperature range, the switch module 30 is controlled to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, so that the third transistor N1 cannot be turned on, and the current passing through the third transistor N1 cannot be output to the compensation node, thereby ensuring that in the third temperature range, only the second temperature compensation module 20 provides a compensation signal to the compensation node, so as to effectively avoid the first temperature compensation module 10 outputting a compensation signal to the compensation node in the third temperature range, affecting the accuracy of the compensation signal output by the temperature compensation circuit 110 to the compensation node in the third temperature range, thereby improving the accuracy and reliability of the compensation signal output by the temperature compensation circuit 110 to the compensation node, and thus achieving higher-precision temperature compensation.

[0154] In some embodiments, the switch module 30 is also used to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 10 within the second temperature range. Exemplarily, the switch module 30 has an on state and an off state, and can switch between the on state and the off state.

[0155] When the temperature is in the first temperature range, the switch module 30 is controlled to switch to the on state so that the first temperature compensation module 10 is connected to the second temperature compensation module 20, and the compensation current output by the first temperature compensation module 10 can flow to the compensation node through the second temperature compensation module 20.

[0156] When the temperature is in at least one of the second temperature range and the third temperature range, the switch module 30 is controlled to switch to the off state so that the first temperature compensation module 10 is disconnected from the second temperature compensation module 20, so that in the corresponding second temperature range and the third temperature range, the first temperature compensation module 10 will not affect the size of the compensation signal output by the second temperature compensation module 20 to the compensation node, thereby achieving higher-precision temperature compensation.

[0157] In some embodiments, the switch module 30 includes a switch tube K1, a first end of the switch tube K1 is connected to the first temperature compensation module 10, and a second end of the switch tube K1 is connected to the second temperature compensation module 20. The controlled end of the switch tube K1 is used to receive a control signal to conduct the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 within a first temperature range, and to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20 within a third temperature range.

[0158] like Figure 5 As shown, the first end of the switch tube K1 is connected to the first zero temperature compensation unit of the first temperature compensation module 10 , and the second end of the switch tube K1 is connected to the second positive temperature compensation unit of the second temperature compensation module 20 .

[0159] Optionally, the switch tube K1 is a MOS tube, and the first end of the MOS tube is the source of the MOS tube, and the second end of the MOS tube is the drain of the MOS tube. Since the MOS tube has a higher input impedance, it will not generate a voltage drop for the excitation signal. Therefore, the required driving control signal is smaller.

[0160] See also Figure 8In some embodiments, the temperature compensation circuit 110 further includes a switch control module 60, which is connected to the switch module 30 and is used to control the switch module 30 to be closed within a first temperature range to open the connection path between the first temperature compensation module 10 and the second temperature compensation module 20, and to control the switch module 30 to be opened within a third temperature range to disconnect the connection path between the first temperature compensation module 10 and the second temperature compensation module 20.

[0161] Exemplarily, the switch control module 60 includes a comparator 601, a first control transistor 602, and a second control transistor 603. A first terminal of the first control transistor 602 is connected to a first terminal of the comparator 601 and is configured to receive a first signal Ibias1. A second terminal of the first control transistor 602 is grounded. A controlled terminal of the first control transistor 602 is connected to a first terminal of the second control transistor 603. The first terminal of the second control transistor 603 is also configured to receive a second signal Ibias2. A second terminal of the second control transistor 603 is grounded, and the controlled terminal of the second control transistor 603 is grounded. A second terminal of the comparator 601 is configured to receive a predetermined electrical signal, such as a voltage signal VBG.

[0162] Optionally, the first terminal of the comparator 601 is a non-inverting input terminal, and the second terminal of the comparator 601 is an inverting input terminal. Optionally, the first control transistor 602 and the second control transistor 603 are the same type of switching transistors, for example, the first control transistor 602 and the second control transistor 603 are both PNP transistors or NPN transistors.

[0163] For example, the following description is made by taking the example that the first control transistor 602 and the second control transistor 603 are both PNP transistors.

[0164] The first signal Ibias1 and the second signal Ibias2 are zero temperature coefficient bias currents. The first control tube 602 and the second control tube 603 form a composite PNP tube, wherein the second control tube 603 is an emitter follower connection.

[0165] The controlled end of the first control tube 602 is connected to node 1 of the first end of the second control tube 603, and the voltage at node 1 is VBE1. The first end of the first control tube 602 is connected to node 2 of the first end of the comparator 601, and the voltage at node 2 is VBE2. Both VBE1 and VBE2 have negative temperature coefficients. At room temperature (e.g., 25°C), typically, VBE1≈0.7V, and VBE2≈2*VBE1=1.4V.

[0166] When the ambient temperature is within the first temperature range, such as when the temperature T is less than t1, VBE2 is greater than VBG. After passing through the comparator 601, the output terminal of the comparator 601 outputs a high level, and the switch control module 60 controls the switch tube K1 of the switch module 30 to be turned on, thereby putting the switch module 30 in the on state.

[0167] When the ambient temperature is in the second temperature range and the third temperature range, that is, when the temperature is greater than the threshold temperature, such as the threshold temperature is t1, the output end of the comparator 601 outputs a low level, controlling the switch tube K1 to be cut off, thereby turning off the switch module 30.

[0168] It can be understood that the specific implementation of the switch control module 60 can also have a variety of circuit structures, as long as the switch control module 60 can output a corresponding high level or low level according to the control signal, thereby realizing the control of the on and off of the switch tube K1 in the switch module 30.

[0169] See also Figures 9 and 10 In some embodiments, the temperature compensation circuit 110 includes at least two first temperature compensation modules 10, and at least some of the first temperature compensation modules 10 include a first switch, which is used to adjust the number of first temperature compensation modules 10 connected to the temperature compensation circuit 110.

[0170] When the number of first temperature compensation modules 10 connected to the temperature compensation circuit 110 increases, the compensation signal value corresponding to the first compensation signal increases; when the number of first temperature compensation modules 10 connected to the temperature compensation circuit 110 decreases, the compensation signal value corresponding to the first compensation signal decreases.

[0171] Optionally, the temperature compensation circuit 110 includes at least two second temperature compensation modules 20 , and at least some of the second temperature compensation modules 20 include a second switch, and the second switch is used to adjust the number of the second temperature compensation modules 20 connected to the temperature compensation circuit 110 .

[0172] When the number of second temperature compensation modules 20 connected to the temperature compensation circuit 110 increases, the compensation signal value corresponding to the second compensation signal increases; when the number of second temperature compensation modules 20 connected to the temperature compensation circuit 110 decreases, the compensation signal value corresponding to the second compensation signal decreases.

[0173] like Figure 9As shown, for example, the temperature compensation circuit 110 includes two first temperature compensation modules 10 and two second temperature compensation modules 20, wherein each first temperature compensation module 10 includes a corresponding first switch, and each second temperature compensation module 20 includes a corresponding second switch. For ease of distinction, one first temperature compensation module 10 is labeled 10a, and the first switch in the first temperature compensation module 10a is K2. Another first temperature compensation module 10 is labeled 10b, and the first switch in the first temperature compensation module 10b is K3. One second temperature compensation module 20 is labeled 20a, and the second switch in the second temperature compensation module 20a is K4. Another second temperature compensation module 10 is labeled 20b, and the second switch in the second temperature compensation module 20b is K5.

[0174] For example, by closing the corresponding first switch K2, the first temperature compensation module 10a is connected to the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1. And / or, by closing the corresponding first switch K2, the first temperature compensation module 10b is connected to the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1.

[0175] Similarly, by disconnecting the corresponding first switch K2, the first temperature compensation module 10a is disconnected from the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1. By disconnecting the corresponding first switch K3, the first temperature compensation module 10b is disconnected from the first positive temperature coefficient power supply A1 and the first zero temperature coefficient power supply B1.

[0176] For example, by closing the corresponding second switch K4, the second temperature compensation module 20a is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2, and / or, by closing the corresponding second switch K5, the second temperature compensation module 20b is connected to the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2.

[0177] Similarly, by disconnecting the corresponding second switch K4, the second temperature compensation module 20a is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2, and / or, by disconnecting the corresponding second switch K5, the second temperature compensation module 20b is disconnected from the second positive temperature coefficient power supply A2 and the second zero temperature coefficient power supply B2.

[0178] Since each temperature compensation circuit can output a corresponding compensation signal to the compensation node in the corresponding target temperature range, the size of the first compensation signal output by the temperature compensation circuit 110 to the compensation node is changed by changing the number of first temperature compensation modules 10 connected to the temperature compensation circuit 110, and the size of the second compensation signal output by the temperature compensation circuit 110 to the compensation node is changed by changing the number of second temperature compensation modules 20 connected to the temperature compensation circuit 110.

[0179] Furthermore, the number of first temperature compensation modules 10 connected to the temperature compensation circuit 110 is positively correlated with the magnitude of the first compensation signal output to the compensation node by the temperature compensation circuit 110. The number of second temperature compensation modules 10 connected to the temperature compensation circuit 110 is positively correlated with the magnitude of the second compensation signal output to the compensation node by the temperature compensation circuit 110.

[0180] In some embodiments, by adding the first temperature compensation module 10 connected to the temperature compensation circuit 110, the change in the first compensation signal per unit time in the third correlation increases; by reducing the first temperature compensation module 10 connected to the temperature compensation circuit 110, the change in the first compensation signal per unit time in the third correlation decreases.

[0181] By increasing the second temperature compensation module 20 connected to the temperature compensation circuit 110, the change of the second compensation signal per unit time in the second correlation increases, and by reducing the second temperature compensation module 20 connected to the temperature compensation circuit 110, the change of the second compensation signal per unit time in the second correlation decreases.

[0182] like Figure 10 As shown, when only the first temperature compensation module 10a is connected to the temperature compensation circuit 110, the corresponding third correlation is the line segment corresponding to K2. When only the first temperature compensation module 10b is connected to the temperature compensation circuit 110, the corresponding third correlation is the line segment corresponding to K3. When both the first temperature compensation module 10a and the first temperature compensation module 10b are connected to the temperature compensation circuit 110, the corresponding third correlation is the line segment corresponding to K2+K3. The change in the first compensation signal per unit time in the line segment corresponding to K2+K3 is greater than the change in the first compensation signal per unit time in the line segment corresponding to K2 or K3.

[0183] When only the second temperature compensation module 20a is connected to the temperature compensation circuit 110, the corresponding second correlation is the line segment corresponding to K4. When only the second temperature compensation module 20b is connected to the temperature compensation circuit 110, the corresponding second correlation is the line segment corresponding to K5. When both the second temperature compensation module 20a and the second temperature compensation module 20b are connected to the temperature compensation circuit 110, the corresponding second correlation is the line segment corresponding to K4+K5. The change in the second compensation signal per unit time in the line segment corresponding to K4+K5 is greater than the change in the second compensation signal per unit time in the line segment corresponding to K4 or K5.

[0184] See also Figure 11 , Figure 11 This is a circuit structure diagram of a second embodiment of the temperature compensation circuit provided in an embodiment of the present application.

[0185] like Figure 11 As shown, the difference from the first embodiment is that the temperature compensation circuit 110 does not include the switch module 30, and the first temperature compensation module 10 is connected to the second temperature compensation module 20. That is, the temperature compensation circuit 110 includes at least one first temperature compensation module 10, at least one second temperature compensation module 20, and a power module 40.

[0186] The first temperature compensation module 10 is connected to the second temperature compensation module 20. The first temperature compensation module 10 is configured to output a first compensation signal to a compensation node within a first temperature range, wherein the first compensation signal has a third correlation with temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node within a third temperature range, wherein the second compensation signal has a fourth correlation with temperature. Furthermore, the compensation signals output by the first and second temperature compensation modules 10 and 20 within the second temperature range are independent of temperature, and the second temperature range is between the first and third temperature ranges. In the third correlation, the magnitude of the first compensation signal is negatively correlated with temperature, and in the fourth correlation, the magnitude of the second compensation signal is positively correlated with temperature.

[0187] Exemplarily, the first temperature compensation module 10 is also used to receive a first positive temperature coefficient current and a first zero temperature coefficient current. The first positive temperature coefficient current and the first zero temperature coefficient current can enable the first temperature compensation module 10 to output a first compensation signal to the compensation node within the first temperature range.

[0188] The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current. The second positive temperature coefficient current and the second zero temperature coefficient current enable the second temperature compensation module 20 to output a second compensation signal to the compensation node within a third temperature range.

[0189] Furthermore, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is used to receive a first positive temperature coefficient current, and the first zero temperature compensation unit 102 is used to receive a first zero temperature coefficient current; in the first temperature range, the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0190] The second temperature compensation module 20 includes a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected to the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is used to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is used to receive a second zero temperature coefficient current; in the third temperature range, the second temperature compensation module 20 outputs a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0191] like Figure 11 As shown, the second embodiment of the temperature compensation circuit is the same as Figure 5 The first embodiment of the corresponding temperature compensation circuit is different in that: Figure 5 In the embodiment, the first temperature compensation module 10 and the second temperature compensation module 20 are connected via the switch module 30 . In this embodiment, there is no switch module 30 , and the first temperature compensation module 10 is connected to the second temperature compensation module 20 .

[0192] The first positive temperature compensation unit 101 includes a first transistor P1 and a second transistor P2, and the first zero temperature compensation unit 102 includes a third transistor N1 and a fourth transistor N2, wherein the controlled ends of the first transistor P1 and the second transistor P2 are used to connect to a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is used to output a first positive temperature coefficient current; the controlled ends of the third transistor N1 and the fourth transistor N2 are used to connect to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is used to output a first zero temperature coefficient current.

[0193] In addition, the first end of the first transistor P1 is used to connect to the power supply, the second end of the first transistor P1 is connected to the first end of the second transistor P2, the second end of the second transistor P2 is connected to the second end of the third transistor N1 and the first end of the fourth transistor N2, the second end of the fourth transistor N2 is grounded, and the first end of the third transistor N1 is connected to the branch where the compensation point is located.

[0194] In the first temperature range, the first transistor P1, the second transistor P2, the third transistor N1, and the fourth transistor N2 are in the on state, and the first temperature compensation module 10 outputs the first compensation signal to the compensation node through the third transistor N1; in the second temperature range and the third temperature range, the third transistor N1 is in the off state.

[0195] The second positive temperature compensation unit 201 includes a fifth transistor P3 and a sixth transistor P4, and the second zero temperature compensation unit 202 includes a seventh transistor N3 and an eighth transistor N4, wherein the controlled ends of the fifth transistor P3 and the sixth transistor P4 are used to be connected to a second zero temperature coefficient power supply, and the second zero temperature coefficient power supply is used to output a second zero temperature coefficient current; the controlled ends of the seventh transistor N3 and the eighth transistor N4 are used to be connected to a second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is used to output a second positive temperature coefficient current;

[0196] In addition, the first end of the seventh transistor N3 is used to connect to the power supply, the second end of the seventh transistor N3 is connected to the first end of the eighth transistor N4, the second end of the eighth transistor N4 is connected to the second end of the fifth transistor P3 and the first end of the sixth transistor P4, the second end of the sixth transistor P4 is grounded, and the first end of the fifth transistor P3 is connected to the branch where the compensation point is located.

[0197] In the third temperature range, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3, and the eighth transistor N4 are in the on state, and the second temperature compensation module 20 outputs the second compensation signal to the compensation node via the seventh transistor N3. In the first and second temperature ranges, the seventh transistor N3 is in the off state.

[0198] In the second embodiment, the functions and working principles corresponding to the same circuit structure in the temperature compensation circuit can be found in the relevant description of the temperature compensation circuit in the first embodiment, which will not be repeated here.

[0199] See also Figure 12 , Figure 12 This is a specific circuit structure diagram of the third implementation of the temperature compensation circuit provided in the embodiment of the present application.

[0200] like Figure 12 As shown, the temperature compensation circuit 110 includes at least one first temperature compensation module 10 , at least one second temperature compensation module 20 and a power supply module 40 .

[0201] The first temperature compensation module 10 is connected to the second temperature compensation module 20. The first temperature compensation module 10 is configured to output a first compensation signal to a compensation node within a first temperature range, wherein the first compensation signal has a third correlation with temperature. The second temperature compensation module 20 is configured to output a second compensation signal to the compensation node within a third temperature range, wherein the second compensation signal has a fourth correlation with temperature. Furthermore, the compensation signals output by the first and second temperature compensation modules 10 and 20 within the second temperature range are independent of temperature, and the second temperature range is between the first and third temperature ranges. In the third correlation, the magnitude of the first compensation signal is negatively correlated with temperature, and in the fourth correlation, the magnitude of the second compensation signal is positively correlated with temperature.

[0202] Exemplarily, the first temperature compensation module 10 is further used to receive a first positive temperature coefficient current and a first zero temperature coefficient current. The first positive temperature coefficient current and the first zero temperature coefficient current enable the first temperature compensation module 10 to output a first compensation signal to the compensation node within the first temperature range.

[0203] The second temperature compensation module 20 is further configured to receive a second positive temperature coefficient current and a second zero temperature coefficient current. The second positive temperature coefficient current and the second zero temperature coefficient current enable the second temperature compensation module 20 to output a second compensation signal to the compensation node within a third temperature range.

[0204] Furthermore, the first temperature compensation module 10 includes a first positive temperature compensation unit 101 and a first zero temperature compensation unit 102 connected to the first positive temperature compensation unit 101, the first positive temperature compensation unit 101 is used to receive a first positive temperature coefficient current, and the first zero temperature compensation unit 102 is used to receive a first zero temperature coefficient current; in the first temperature range, the first temperature compensation module 10 outputs a first compensation signal to the compensation node after receiving the first positive temperature coefficient current and the first zero temperature coefficient current.

[0205] The second temperature compensation module 20 includes a second positive temperature compensation unit 201 and a second zero temperature compensation unit 202 connected to the second positive temperature compensation unit 201, the second positive temperature compensation unit 201 is used to receive a second positive temperature coefficient current, and the second zero temperature compensation unit 202 is used to receive a second zero temperature coefficient current; in the third temperature range, the second temperature compensation module 20 outputs a second compensation signal to the compensation node after receiving the second positive temperature coefficient current and the second zero temperature coefficient current.

[0206] In the third embodiment of the temperature compensation circuit, for the functions and working principles corresponding to the same circuit structure in the temperature compensation circuit, please refer to the relevant description of the temperature compensation circuit in the second embodiment, which will not be repeated here.

[0207] The third embodiment differs from the second embodiment in that the first positive temperature compensation unit 101 includes a first transistor N1 and a second transistor N2, and the first zero temperature compensation unit 102 includes a third transistor P1 and a fourth transistor P2. The controlled ends of the first transistor N1 and the second transistor N2 are connected to a first positive temperature coefficient power supply A1, which is configured to output a first positive temperature coefficient current; the controlled ends of the third transistor P1 and the fourth transistor P2 are connected to a first zero temperature coefficient power supply B1, which is configured to output a first zero temperature coefficient current. Furthermore, the first end of the third transistor P1 is connected to a power supply VDD, the second end of the third transistor P1 is connected to the first end of the fourth transistor P2 and the first end of the first transistor N1, and the second end of the fourth transistor P2 is connected to the branch at the compensation point; the second end of the first transistor N1 is connected to the first end of the second transistor N2, and the second end of the second transistor N2 is grounded.

[0208] The second positive temperature compensation unit 201 includes a fifth transistor P3 and a sixth transistor P4, and the second zero temperature compensation unit 202 includes a seventh transistor N3 and an eighth transistor N4, wherein the controlled ends of the fifth transistor P3 and the sixth transistor P4 are used to connect to the second positive temperature coefficient power supply A2, and the second positive temperature coefficient power supply A2 is used to output a second positive temperature coefficient current; the controlled ends of the seventh transistor N3 and the eighth transistor N4 are used to connect to the second zero temperature coefficient power supply B2, and the second zero temperature coefficient power supply B2 is used to output a second zero temperature coefficient current.

[0209] In addition, the first end of the fifth transistor P3 is used to connect to the power supply VDD, the second end of the fifth transistor P3 is connected to the first end of the sixth transistor P4 and the first end of the seventh transistor N3, the second end of the sixth transistor P4 is connected to the branch where the compensation point is located; the second end of the seventh transistor N3 is connected to the first end of the eighth transistor N4, and the second end of the eighth transistor N4 is grounded.

[0210] like Figure 13 As shown, after the first positive temperature compensation unit 101 receives the first positive temperature coefficient current and the first zero temperature compensation unit 102 receives the first zero temperature coefficient current, the current flowing through the first transistor N1 is IN1, and the magnitude of IN1 is positively correlated with the temperature. The current flowing through the third transistor P1 is IP1, and the magnitude of IP1 is independent of the temperature.

[0211] After the second positive temperature compensation unit 201 receives the second positive temperature coefficient current and the second zero temperature compensation unit 202 receives the second zero temperature coefficient current, the current flowing through the fifth transistor P3 is IP3, and the magnitude of IP3 is positively correlated with the temperature. The current flowing through the seventh transistor N3 is IN3, and the magnitude of IN3 is independent of the temperature.

[0212] In the first temperature range (t0-t1), IP1>IN1, the first transistor N1, the second transistor N2, the third transistor P1 and the fourth transistor P2 are in the on state, and the current output by the first positive temperature compensation module 10 to the compensation node through the fourth transistor P2 is IOUT, IOUT=|IP2|=|IP1|-IN1, |IP1| does not change with temperature, IN1 increases with increasing temperature, so IOUT decreases with increasing temperature, that is, IOUT is negatively correlated with temperature.

[0213] At this time, the voltage of the compensation node is VOUT, VOUT=VBG+IOUT*R, VOUT decreases as the temperature increases, and VOUT is a negative temperature coefficient voltage.

[0214] In the first temperature range (t0-t1), IN3 ≥ IP3, the sixth transistor P4 is in a saturated state, the seventh transistor N3 and the eighth transistor N enter the linear region, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current is output to the compensation node through the sixth transistor P4, and the sixth transistor P4 can be regarded as being in a closed state. Therefore, the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the first temperature range is zero.

[0215] Similarly, within the second temperature range (t1-t2), IN3≥IP3, the sixth transistor P4 is in a saturated state, so that the current IP4 flowing through the sixth transistor P4 is equal to zero, that is, no current is output to the compensation node through the sixth transistor P4, and the sixth transistor P4 can be regarded as being in a closed state. Therefore, the compensation signal (compensation current) output by the second temperature compensation module 20 to the compensation node D in the second temperature range is zero.

[0216] In the second temperature range, IP1≤IN1, the fourth transistor P2 is in the cut-off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current is output to the compensation node through the fourth transistor P2, and the fourth transistor P2 can be regarded as being in the off state. Therefore, the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the second temperature range is zero.

[0217] Similarly, in the third temperature range [t2-t3), IP1<IN1, the fourth transistor P2 is in the cut-off state, so that the current IP2 of the fourth transistor P2 is equal to zero, that is, no current passes through the fourth transistor P2 and is output to the compensation node. It can be regarded as that the fourth transistor P2 is in the off state, so the compensation signal (compensation current) output by the first temperature compensation module 10 to the compensation node D in the third temperature range is zero.

[0218] In the third temperature range, IN3<IP3, the current |IP3| flowing through P3 is greater than the current IN3 flowing through N3, the fifth transistor P3, the sixth transistor P4, the seventh transistor N3, and the eighth transistor N4 are in the on state, and the current output by the second positive temperature compensation module 20 to the compensation node through the sixth transistor P4 is IOUT, IOUT=|IP4|=|IP3|-IN3, |IP3| increases with increasing temperature, IN3 does not change with temperature, so IOUT increases with increasing temperature.

[0219] At this time, the voltage of the compensation node is VOUT, VOUT=VBG+IOUT*R, VOUT increases as the temperature rises, and VOUT is a positive temperature coefficient voltage.

[0220] In some embodiments, the voltage at the compensation node D can be adjusted by adjusting the resistance of the voltage divider unit 402 in the power module 40. For example, the voltage divider unit 402 is provided with an adjustable resistor, and the voltage at the compensation node D is adjusted by adjusting the resistance of the adjustable resistor. Alternatively, the voltage divider unit 402 is provided with a switch and a resistor, and the number of resistors connected to the voltage divider unit 402 is controlled by turning the switch on or off, thereby achieving adjustable resistance of the voltage divider unit 402.

[0221] See also Figure 14 In some embodiments, the clamping circuit 120 includes a clamping branch 122 and a following branch 123. The clamping branch 122 is connected to the branch where the compensation node of the temperature compensation circuit 110 is located, and is configured to generate a corresponding initial clamping signal based on the compensation signal of the compensation node.

[0222] The output branch of the follower branch 123 is connected to the bias circuit 200, and the follower branch 123 is configured to make the clamping value on the output branch of the follower branch 123 have a first correlation with the temperature within the first temperature range and a second correlation with the temperature within the third temperature range based on the initial clamping signal, wherein the output branch of the follower branch 123 is the same branch as the output branch of the protection circuit 100.

[0223] For example, the clamping circuit 120 generates a corresponding first initial clamping signal according to the first compensation signal outputted by the temperature compensation circuit to the compensation node, and generates a corresponding second initial clamping signal according to the second compensation signal outputted by the temperature compensation circuit to the compensation node.

[0224] Among them, the correlation between the first initial clamping signal and the temperature in the first temperature range is the same as the correlation between the clamping value on the output branch of the clamping circuit 120 and the temperature in the first temperature range; and the correlation between the second initial clamping signal and the temperature in the third temperature range is the same as the correlation between the clamping value on the output branch of the clamping circuit 120 and the temperature in the third temperature range.

[0225] The follower branch 123 causes a clamping value of a clamping signal on an output branch of the follower branch 123 to have a first correlation with temperature within a first temperature range based on the first initial clamping signal. Furthermore, the follower branch 123 causes a clamping value of a clamping signal on an output branch of the follower branch 123 to have a second correlation with temperature within a third temperature range based on the second initial clamping signal.

[0226] The first correlation is different from the second correlation. In the first correlation, the clamping value on the output branch of the follower branch 123 is positively correlated with the temperature. In the second correlation, the clamping value on the output branch of the protection circuit is negatively correlated with the temperature. Figure 6 shown.

[0227] Alternatively, in the first correlation, the clamping value on the output branch of the protection circuit 100 is negatively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is positively correlated with the temperature, such as Figure 13 shown.

[0228] like Figure 14 As shown, in some embodiments, the clamping branch 122 includes an op amp 1221, a first switch 1222, and a second voltage divider 1223. The first input of the op amp 1221 is connected to the compensation node of the temperature compensation circuit 110 or to the branch where the compensation node of the temperature compensation circuit 110 is located. The output of the op amp 1221 is connected to the controlled terminal of the first switch 1222 and the input of the follower branch 123. The first terminal of the first switch 1222 is used to receive a first preset voltage. The second terminal of the first switch 1222 is connected to the second input of the op amp 1221. The second terminal of the first switch 1222 is connected to the first terminal of the second voltage divider 1223. The second terminal of the second voltage divider 1223 is grounded. The voltage divider 1223 is a resistor R2. Optionally, the resistance value of the resistor R2 is adjustable, that is, the resistor R2 is an adjustable resistor.

[0229] Optionally, the follower branch 123 includes a second switch tube 1231, the controlled end of the second switch tube 1231 is connected to the controlled end of the first switch tube 1222, the first end of the second switch tube 1231 is used to receive a second preset voltage, and the second end of the second switch tube 1231 is connected to the bias circuit 200, that is, the connection branch connecting the second switch tube 1231 and the bias circuit 200 is the output branch of the follower branch 123.

[0230] Optionally, the first switch tube 1222 and the second switch tube 131 are MOS tubes of the same type. Optionally, the first switch tube 1222 and the second switch tube 131 are both PNP tubes.

[0231] like Figure 14 As shown, according to the characteristics of the operational amplifier 1221, the feedback voltage V0 of the second input terminal of the operational amplifier 1221 is equal to the voltage of the first input terminal of the operational amplifier 1221, which is the voltage Vout corresponding to the compensation node, and the feedback voltage V0 based on the second input terminal is equal to the voltage VCC of the first terminal of the voltage divider unit 1223. Therefore, Vout=VCC.

[0232] The compensation current Iout output by the temperature compensation circuit 110 to the compensation node in the first and third temperature ranges varies with temperature. Therefore, the corresponding compensation voltage Vout at the compensation node in the first and third temperature ranges also varies with temperature. That is, the VCC voltage also varies with the compensation voltage Vout.

[0233] The current I1 flowing through first switch 1222 is equal to VCC / R2. Therefore, I1 also changes with the compensation voltage Vout. First switch 1222 and second switch 1231 form a mirror current source. The branch connecting second switch 1231 to bias circuit 200 constitutes the output branch of clamp circuit 120. At this time, the current Iclamp flowing through second switch 1231 is the clamp signal output by clamp circuit 120 through the output branch.

[0234] Here, Iclamp = K*I1, where K is the current following coefficient of the following branch 123 and K is a constant, I1 = VCC / R2, Vout = VCC, and Vout also changes with temperature. Therefore, I1 changes with the compensation voltage Vout. In other words, the clamping signal Iclamp output by the output branch of the clamping circuit 120 also changes with temperature. That is, the clamping value corresponding to the clamping signal also changes with temperature.

[0235] For example, if Figure 6 As shown, in the first temperature range, the compensation current Iout (first compensation signal) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature, and the clamping circuit 120 generates a corresponding first initial clamping signal based on the compensation current Iout (first compensation signal) output by the temperature compensation circuit to the compensation node, which is positively correlated with the temperature. The follower branch 123 makes the clamping value of the clamping signal on the output branch of the follower branch 123 positively correlated with the temperature based on the first initial clamping signal.

[0236] In the third temperature range, the compensation current Iout (second compensation signal) output by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature, and the clamping circuit 120 generates a corresponding second initial clamping signal according to the compensation current Iout (second compensation signal) output by the temperature compensation circuit to the compensation node, which is negatively correlated with the temperature. The follower branch 123 makes the clamping value of the clamping signal on the output branch of the follower branch 123 negatively correlated with the temperature based on the second initial clamping signal.

[0237] Or, as Figure 13 As shown, in the first temperature range, the compensation current Iout (first compensation signal) output by the temperature compensation circuit 110 to the compensation node is negatively correlated with the temperature, and the clamping circuit 120 generates a corresponding first initial clamping signal based on the compensation current Iout (first compensation signal) output by the temperature compensation circuit to the compensation node, which is negatively correlated with the temperature. The follower branch 123 makes the clamping value of the clamping signal on the output branch of the follower branch 123 negatively correlated with the temperature based on the first initial clamping signal.

[0238] In the third temperature range, the compensation current Iout (second compensation signal) output by the temperature compensation circuit 110 to the compensation node is positively correlated with the temperature, and the clamping circuit 120 generates a corresponding second initial clamping signal based on the compensation current Iout (second compensation signal) output by the temperature compensation circuit to the compensation node, which is positively correlated with the temperature. The follower branch 123 makes the clamping value of the clamping signal on the output branch of the follower branch 123 positively correlated with the temperature based on the second initial clamping signal.

[0239] In some embodiments, different from the aforementioned embodiments, the power amplifier circuit 300 and the bias circuit 200 of the RF front-end module 1 are arranged on the first chip, the protection circuit 100 of the RF front-end module 1 is arranged on the second chip, and the first chip and the second chip are both arranged on the substrate, wherein the first chip and the second chip can be arranged on the same surface of the substrate or on different surfaces of the substrate, and there is no limitation here.

[0240] The first chip is provided with a power amplifier circuit 300 and a bias circuit 200. The second chip is provided with a protection circuit 100. By providing the power amplifier circuit 300 and the bias circuit 200 on the same chip and the protection circuit on another chip, if one chip fails, only the failed chip needs to be replaced, which facilitates maintenance of the RF front-end module.

[0241] That is, the RF front-end module 1 includes a substrate, a first chip and a second chip disposed on the substrate, wherein the first chip includes a power amplifier circuit 300 and a bias circuit 200 that provides a bias signal for the power amplifier circuit 300. The second chip includes a protection circuit 100, which is connected to the bias circuit 200 and configured such that a clamping value on an output branch connected to the protection circuit 100 and the bias circuit 200 has a first correlation with temperature in a first temperature range, and / or the protection circuit 100 is configured such that a clamping value on an output branch connected to the protection circuit 100 and the bias circuit 200 has a second correlation with temperature in a third temperature range.

[0242] See also Figure 15 In some embodiments, different from the aforementioned embodiments, the magnitude of the bias source signal received by the first end of the bias circuit 200 is related to temperature.

[0243] like Figure 15 As shown, for example, the second end of the bias circuit 200 is configured to be connected to the protection circuit 100, the third end of the bias circuit 200 is configured to be connected to the power amplifier circuit 300 and output a bias signal to the power amplifier circuit, and the first end of the bias circuit 200 is configured to be connected to the bias control circuit 400. The protection circuit 100 is configured to ensure that the clamping value on the output branch connected to the protection circuit 100 and the bias circuit 200 has a first relationship with the temperature within a target temperature range. The bias control circuit 400 is configured to ensure that the bias source signal on the output branch of the bias circuit 200 and the bias control circuit 400 has a second relationship with the temperature within the target temperature range; the first relationship and the second relationship are different. The third end of the bias circuit 200 is configured to be connected to the power amplifier circuit 300 and output a bias signal to the power amplifier circuit 300.

[0244] Optionally, the target temperature range includes at least a first temperature range and a third temperature range, and the protection circuit 100 is configured so that the bias circuit 200 and the clamping value on the output branch of the protection circuit 100 have a first correlation with the temperature in the first temperature range, and have a second correlation with the temperature in the third temperature range.

[0245] The bias control circuit 400 is configured such that the bias circuit 200 and the bias source signal on the output branch of the bias control circuit 200 have a seventh correlation with the temperature within the first temperature range, and have an eighth correlation with the temperature within the third temperature range, wherein the seventh correlation and the eighth correlation may have the same or different correlations with the temperature.

[0246] like Figure 16As shown, the bias source signal is the bias current, and the seventh correlation and the eighth correlation are both positively correlated with the temperature. That is, in the seventh correlation and the eighth correlation, the bias source signal on the output branch of the bias control circuit 400 is positively correlated with the temperature. That is, in the first temperature range and the third temperature range, the higher the temperature, the larger the bias source signal on the output branch of the bias control circuit 400.

[0247] Optionally, in the second temperature range, the bias source signal on the output branch of the bias control circuit 400 is independent of temperature.

[0248] In some embodiments, unlike the aforementioned embodiments, the RF front-end module 1 includes at least a power amplifier circuit 300 and a bias circuit 200 that provides a bias signal for the power amplifier circuit 300. The power amplifier circuit 300 and the bias circuit 200 that provides a bias signal for the power amplifier circuit 300 are connected to the protection circuit 100. The protection circuit 100 is configured such that the clamping value on the output branch connected to the protection circuit 100 and the bias circuit 200 is positively correlated with the temperature within a first temperature range, and the maximum value of the first temperature range is less than the first temperature threshold. Alternatively, the protection circuit 100 is configured such that the clamping value on the output branch connected to the bias circuit 200 and the protection circuit 100 is negatively correlated with the temperature within a third temperature range, and the minimum value of the third temperature range is greater than the second temperature threshold.

[0249] In some embodiments, different from the aforementioned embodiments, the RF front-end module 1 at least includes a power amplifier circuit 300 and a bias circuit 200 for providing a bias signal to the power amplifier circuit 300 .

[0250] The second end of the bias circuit 200 is connected to the protection circuit 100. The protection circuit 100 is configured such that the clamping value on the output branch connected to the protection circuit 100 and the bias circuit 200 has a first relationship with the temperature within a target temperature range. The first end of the bias circuit 200 is connected to the bias control circuit. The bias control circuit is configured such that the bias source signal on the output branch of the bias circuit 200 and the bias control circuit has a second relationship with the temperature within the target temperature range; the first relationship and the second relationship are different. The third end of the bias circuit 200 is connected to the power amplifier circuit 300 and outputs a bias signal to the power amplifier circuit 300.

[0251] In some embodiments, unlike the aforementioned embodiments, the RF front-end module 1 includes at least a power amplifier circuit 300 and a bias circuit 200 for providing a bias signal to the power amplifier circuit 300. The maximum value of the bias signal output by the bias circuit 200 has a fifth correlation with the temperature in the first temperature range, and the maximum value of the bias signal output by the bias circuit 200 has a sixth correlation with the temperature in the third temperature range. The fifth correlation is different from the sixth correlation, and the minimum value in the third temperature range is greater than the maximum value in the first temperature range.

[0252] See also Figure 17 , Figure 17 This is a block diagram of a communication device provided in this application.

[0253] like Figure 17 As shown, the communication device 3 includes an antenna module 2 and a radio frequency front-end module 1, and the radio frequency front-end module 1 is connected to the antenna module 2. The radio frequency front-end module 1 can operate in a transmitting mode or a receiving mode, and the operating mode of the radio frequency front-end module 1 can be switched by a transmit / receive switch. When the radio frequency front-end module 1 operates in a transmitting mode, the received radio frequency analog signal is transmitted to the antenna module 2 so as to transmit the signal through the antenna module 2. When the radio frequency front-end module 1 operates in a receiving mode, the radio frequency front-end module 1 receives the radio frequency analog signal received by the antenna module 2 and performs amplification, filtering, and other processing on the radio frequency analog signal. It can be understood that the communication device 100 not only includes an antenna device, but also includes other modules, such as a signal processing device, a processor, a user interface, a memory, and the like. The communication device includes but is not limited to a personal digital assistant (PDA), a mobile phone, a card in a laptop computer, a wireless tablet computer, and the like.

[0254] It will also be understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0255] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present application, and such modifications or substitutions should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A radio frequency front-end module, characterized in that: include: A power amplifier circuit, a bias circuit for providing a bias signal to the power amplifier circuit, and a protection circuit connected to the bias circuit; The protection circuit is configured such that a clamping value on an output branch of the protection circuit connected to the bias circuit has a first correlation with temperature within a first temperature range and a second correlation with temperature within a third temperature range, wherein the first correlation and the second correlation have different correlations with temperature, and a minimum value of the third temperature range is greater than a maximum value of the first temperature range; The protection circuit includes a temperature compensation circuit and a clamping circuit, wherein the temperature compensation circuit is configured to output a first compensation signal to the compensation node in the first temperature range and output a second compensation signal to the compensation node in the third temperature range; The clamping circuit is connected to a branch where a compensation node of the temperature compensation circuit is located, and an output end of the clamping circuit is connected to the bias circuit. The clamping circuit is configured to, based on the first compensation signal, cause a clamping value between the bias circuit and the output branch of the clamping circuit to have a first correlation with temperature within a first temperature range, and to, based on the second compensation signal, cause a clamping value between the bias circuit and the output branch of the clamping circuit to have a second correlation with temperature within a third temperature range, and the clamping value is used to clamp a maximum value of a bias signal output by the bias circuit.

2. The RF front-end module according to claim 1, wherein: The maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

3. The RF front-end module according to claim 1, wherein: In the first correlation, the clamping value on the output branch of the protection circuit is negatively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is positively correlated with the temperature; Alternatively, in the first correlation, the clamping value on the output branch of the protection circuit is positively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is negatively correlated with the temperature.

4. The RF front-end module according to claim 1, wherein: In a second temperature range, the clamping value on the output branch of the protection circuit is independent of temperature, and the second temperature range is located between the first temperature range and the third temperature range.

5. The RF front-end module according to claim 1, wherein: The first compensation signal has a third correlation with the temperature within the first temperature range, and the second compensation signal has a fourth correlation with the temperature within the third temperature range that is different from the third correlation.

6. The RF front-end module according to claim 5, wherein: The clamping circuit is configured so that either one of the first compensation signal and the second compensation signal causes a clamping value on an output branch of the clamping circuit to be less than or equal to a first threshold.

7. The RF front-end module according to claim 5, wherein: The clamping circuit includes a clamping branch and a following branch, wherein the clamping branch is connected to the branch where the compensation node is located and is configured to generate a corresponding initial clamping signal based on the compensation signal of the compensation node; The output branch of the follower branch is connected to the bias circuit, and the follower branch is configured to make the clamping value on the output branch of the follower branch have the first correlation with the temperature within the first temperature range and the second correlation with the temperature within the third temperature range based on the initial clamping signal, wherein the output branch of the follower branch and the output branch of the protection circuit are the same branch.

8. The RF front-end module according to claim 7, wherein: The clamping branch generates a first initial clamping signal based on the first compensation signal, and the clamping branch generates a second initial clamping signal based on the second compensation signal; The correlation between the first initial clamping signal and the temperature in the first temperature range is the same as the correlation between the clamping value on the output branch of the clamping circuit and the temperature in the first temperature range; and the correlation between the second initial clamping signal and the temperature in the third temperature range is the same as the correlation between the clamping value on the output branch of the clamping circuit and the temperature in the third temperature range.

9. The RF front-end module according to claim 7, wherein: The clamping branch includes an op amp, a first switching tube and a second voltage divider unit. The first input end of the op amp is connected to the branch where the compensation node is located, the output end of the op amp is connected to the controlled end of the first switching tube and the input end of the follower branch, the first end of the first switching tube is used to receive a first preset voltage, the second end of the first switching tube is connected to the second input end of the op amp, and the second end of the first switching tube is connected to the first end of the second voltage divider unit, and the second end of the second voltage divider unit is grounded.

10. The RF front-end module according to claim 9, wherein: The second voltage dividing unit includes a resistor, and the resistance of the resistor is adjustable.

11. The RF front-end module according to claim 9, wherein: The follower branch includes a second switch tube, a controlled end of the second switch tube is connected to the controlled end of the first switch tube, a first end of the second switch tube is used to receive a second preset voltage, and a second end of the second switch tube is connected to the bias circuit; wherein the connection branch connecting the second switch tube and the bias circuit is the output branch of the follower branch.

12. The RF front-end module according to claim 11, wherein: The first switching transistor and the second switching transistor are MOS transistors of the same type.

13. The RF front-end module according to claim 11, wherein: The first switching tube and the second switching tube are both PNP tubes.

14. The RF front-end module according to claim 5, wherein: The temperature compensation circuit includes at least one first temperature compensation module and at least one second temperature compensation module; Wherein, the first temperature compensation module is used to output the first compensation signal to the compensation node within a first temperature range; The second temperature compensation module is used to output the second compensation signal to the compensation node within a third temperature range, and the clamping circuit is connected to the branch where the compensation node is located.

15. The radio frequency front-end module according to claim 14, wherein: The first temperature compensation module includes a first positive temperature compensation unit and a first zero temperature compensation unit connected to the first positive temperature compensation unit, the first positive temperature compensation unit is used to receive a first positive temperature coefficient current, and the first zero temperature compensation unit is used to receive a first zero temperature coefficient current; and in the first temperature range, the first temperature compensation module outputs the first compensation signal to the compensation node.

16. The radio frequency front-end module according to claim 15, characterized in that: The first positive temperature compensation unit includes a first transistor and a second transistor, and the first zero temperature compensation unit includes a third transistor and a fourth transistor, wherein the controlled ends of the first transistor and the second transistor are used to be connected to a first positive temperature coefficient power supply, and the first positive temperature coefficient power supply is used to output the first positive temperature coefficient current; the controlled ends of the third transistor and the fourth transistor are used to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is used to output the first zero temperature coefficient current; In addition, the first end of the first transistor is used to connect to the power supply, the second end of the first transistor is connected to the first end of the second transistor, the second end of the second transistor is connected to the second end of the third transistor and the first end of the fourth transistor, the second end of the fourth transistor is grounded, and the first end of the third transistor is connected to the second temperature compensation module and the branch where the compensation point is located.

17. The RF front-end module according to claim 16, wherein: In the first temperature range, the first transistor, the second transistor, the third transistor, and the fourth transistor are in an on state, and the first temperature compensation module outputs the first compensation signal to the compensation node via the third transistor.

18. The radio frequency front-end module according to claim 16, wherein: In the third temperature range, the third transistor is in a turned-off state.

19. The RF front-end module according to claim 14, wherein: The second temperature compensation module includes a second positive temperature compensation unit and a second zero temperature compensation unit connected to the second positive temperature compensation unit, the second positive temperature compensation unit is used to receive a second positive temperature coefficient current, and the second zero temperature compensation unit is used to receive a second zero temperature coefficient current; in the third temperature range, the second temperature compensation module outputs the second compensation signal to the compensation node.

20. The radio frequency front-end module according to claim 19, wherein: The second positive temperature compensation unit includes a fifth transistor and a sixth transistor, and the second zero temperature compensation unit includes a seventh transistor and an eighth transistor, wherein the controlled ends of the fifth transistor and the sixth transistor are used to be connected to a second positive temperature coefficient power supply, and the second positive temperature coefficient power supply is used to output the second positive temperature coefficient current; the controlled ends of the seventh transistor and the eighth transistor are used to be connected to a first zero temperature coefficient power supply, and the first zero temperature coefficient power supply is used to output the first zero temperature coefficient current; In addition, the first end of the seventh transistor is used to connect to the power supply, the second end of the seventh transistor is connected to the first end of the eighth transistor, the second end of the eighth transistor is connected to the second end of the fifth transistor and the first end of the sixth transistor, the second end of the sixth transistor is grounded, and the first end of the fifth transistor is connected to the first temperature compensation module and the branch where the compensation point is located.

21. The radio frequency front-end module according to any one of claims 1 to 20, characterized in that: The second end of the bias circuit is configured to be connected to the protection circuit, the third end of the bias circuit is configured to be connected to the power amplifier circuit and output a bias signal to the power amplifier circuit, and the first end of the bias circuit is configured to receive a bias source signal.

22. The radio frequency front-end module according to claim 21, wherein: The bias circuit includes a bias transistor, the first end of the bias circuit is the first end of the bias transistor, and the first end of the bias transistor is configured to receive a bias source signal; The second end of the bias circuit is the second end of the bias transistor, and the second end of the bias transistor is configured to be connected to the output branch of the protection circuit; the third end of the bias circuit is the third end of the bias transistor, and the third end of the bias transistor is connected to the power amplifier circuit and configured to output a bias signal to the power amplifier circuit.

23. The radio frequency front-end module according to claim 22, wherein: The bias transistor is a bipolar transistor, the first end of the bias transistor is a base, the second end of the bias transistor is a collector, and the third end of the bias transistor is an emitter; Alternatively, the bias transistor is a field effect transistor, the first terminal of the bias transistor is a gate, the second terminal of the bias transistor is a source, and the third terminal of the bias transistor is a drain.

24. The radio frequency front-end module according to claim 22, wherein: The bias circuit further includes a first capacitor, a first end of the first capacitor is connected to the second end of the bias transistor, and a second end of the first capacitor is grounded.

25. The radio frequency front-end module according to any one of claims 1 to 20, characterized in that: The power amplifier circuit includes a first amplifying branch and a second amplifying branch; a first output terminal of the bias circuit is connected to an input terminal of the first amplifying branch and is configured to output a first bias signal to the first amplifying branch; a second output terminal of the bias circuit is connected to an input terminal of the second amplifying branch and is configured to output a second bias signal to the second amplifying branch; wherein a maximum value of the first bias signal output by the bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the bias circuit is less than or equal to the clamping value; Alternatively, the power amplifier circuit includes a first amplifying branch and a second amplifying branch; the bias circuit includes a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit, respectively, the output end of the first bias circuit is connected to the input end of the first amplifying branch, and is configured to output a first bias signal to the first amplifying branch; the output end of the second bias circuit is connected to the input end of the second amplifying branch, and is configured to output a second bias signal to the second amplifying branch; wherein the maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; and the maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value.

26. The radio frequency front-end module according to any one of claims 1 to 20, characterized in that: The power amplifier circuit includes a first-stage amplifier circuit and a second-stage amplifier circuit connected in series; a first output terminal of the bias circuit is connected to an input terminal of the first-stage amplifier circuit and is configured to output a first bias signal to the first-stage amplifier circuit; a second output terminal of the bias circuit is connected to an input terminal of the second-stage amplifier circuit and is configured to output a second bias signal to the second-stage amplifier circuit; wherein a maximum value of the first bias signal output by the bias circuit is less than or equal to the clamping value; and a maximum value of the second bias signal output by the bias circuit is less than or equal to the clamping value; Alternatively, the power amplifier circuit includes a first-stage amplifier circuit and a second-stage amplifier circuit connected in series; the bias circuit includes a first bias circuit and a second bias circuit; the protection circuit is connected to the first bias circuit and the second bias circuit, respectively, the output end of the first bias circuit is connected to the input end of the first-stage amplifier circuit, and is configured to output a first bias signal to the first-stage amplifier circuit; the output end of the second bias circuit is connected to the input end of the second-stage amplifier circuit, and is configured to output a second bias signal to the second-stage amplifier circuit; wherein the maximum value of the first bias signal output by the first bias circuit is less than or equal to the clamping value; and the maximum value of the second bias signal output by the second bias circuit is less than or equal to the clamping value.

27. A radio frequency front-end module, characterized in that: include: A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; The maximum value of the bias signal output by the bias circuit has a fifth correlation with the temperature in the first temperature range, and the maximum value of the bias signal output by the bias circuit has a sixth correlation with the temperature in the third temperature range, the fifth correlation is different from the sixth correlation, and the minimum value in the third temperature range is greater than the maximum value in the first temperature range; The RF front-end module also includes a protection circuit, which is connected to the bias circuit and configured so that a clamping value on an output branch connected to the protection circuit and the bias circuit has a first correlation with temperature within a first temperature range, and is configured so that a clamping value on an output branch connected to the protection circuit and the bias circuit has a second correlation with temperature within a third temperature range, and the clamping value is used to clamp the maximum value of the bias signal output by the bias circuit.

28. The radio frequency front-end module according to claim 27, wherein: In the fifth correlation, the maximum value of the bias signal output by the bias circuit is negatively correlated with the temperature, and in the sixth correlation, the maximum value of the bias signal output by the bias circuit is positively correlated with the temperature; Alternatively, in the fifth correlation, the maximum value of the bias signal output by the bias circuit is positively correlated with the temperature, and in the sixth correlation, the maximum value of the bias signal output by the bias circuit is negatively correlated with the temperature.

29. The radio frequency front-end module according to claim 27, wherein: In a second temperature range, a maximum value of the bias signal output by the bias circuit is independent of temperature, and the second temperature range is between the first temperature range and the third temperature range.

30. The radio frequency front-end module according to claim 27, wherein: The protection circuit includes a temperature compensation circuit and a clamping circuit, wherein the temperature compensation circuit is connected to an input end of the clamping circuit, and an output end of the clamping circuit is connected to the bias circuit; The temperature compensation circuit is configured to output a first compensation signal in the first temperature range and a second compensation signal in the third temperature range. The clamping circuit is configured to cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the first correlation with the temperature within the first temperature range based on the first compensation signal, and to cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the second correlation with the temperature within the third temperature range based on the second compensation signal.

31. The radio frequency front-end module according to claim 30, characterized in that: The first compensation signal has a third correlation with the temperature within the first temperature range, and the second compensation signal has a fourth correlation with the temperature within the third temperature range that is different from the third correlation.

32. The radio frequency front-end module according to claim 31, wherein: The clamp circuit is configured to make a clamp value on an output branch of the clamp circuit less than or equal to a first threshold based on either the first compensation signal or the second compensation signal.

33. The radio frequency front-end module according to claim 30 or 31, characterized in that: The maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

34. A radio frequency front-end module, characterized in that: include: A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; The second end of the bias circuit is configured to be connected to a protection circuit, and the protection circuit is configured to ensure that a clamping value on an output branch of the protection circuit connected to the bias circuit has a first relationship with a temperature within a target temperature range, and the clamping value is used to clamp a maximum value of a bias signal output by the bias circuit; The first end of the bias circuit is configured to be connected to a bias control circuit, and the bias control circuit is configured to make the bias source signal on the output branch of the bias circuit and the bias control circuit have a second relationship with the temperature in the target temperature range; the first relationship and the second relationship are different; The third terminal of the bias circuit is configured to be connected to the power amplifier circuit and output a bias signal to the power amplifier circuit.

35. The radio frequency front-end module according to claim 34, characterized in that: The maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

36. The radio frequency front-end module according to claim 34, wherein: The bias circuit includes a bias transistor, wherein the bias transistor is a bipolar transistor, a first terminal of the bias circuit is a base of the bias transistor, a second terminal of the bias circuit is a collector of the bias transistor, and a third terminal of the bias circuit is an emitter of the bias transistor; Alternatively, the bias transistor is a field effect transistor, the first end of the bias circuit is the gate of the field effect transistor, the second end of the bias circuit is the source of the field effect transistor, and the third end of the bias circuit is the drain of the field effect transistor.

37. The radio frequency front-end module according to claim 34, characterized in that: The target temperature interval includes at least a first temperature interval and a third temperature interval, and the minimum value of the third temperature interval is greater than the maximum value of the first temperature interval; The protection circuit is configured such that the clamping value of the bias circuit and the output branch of the protection circuit has a first correlation with temperature within a first temperature range and a second correlation with temperature within a third temperature range, and the first correlation and the second correlation have different correlations with temperature; The bias control circuit is configured such that the bias circuit and the bias source signal on the output branch of the bias control circuit have a seventh correlation with the temperature in the first temperature interval and an eighth correlation with the temperature in the third temperature interval.

38. The radio frequency front-end module according to claim 37, wherein: In the first correlation, the clamping value on the output branch of the protection circuit is negatively correlated with the temperature, and in the second correlation, the clamping value on the output branch of the protection circuit is positively correlated with the temperature; And / or, in the seventh correlation and the eighth correlation, the bias source signal on the output branch of the bias control circuit is positively correlated with the temperature.

39. The RF front-end module according to claim 37, wherein: The protection circuit includes a temperature compensation circuit and a clamping circuit, wherein the temperature compensation circuit is connected to an input end of the clamping circuit, and an output end of the clamping circuit is connected to the bias circuit; In which, the temperature compensation circuit is used to output a first compensation signal or a second compensation signal, the first compensation signal has the third correlation with the temperature within the first temperature range, and the second compensation signal has the fourth correlation with the temperature within the third temperature range; the clamping circuit is configured to, based on the first compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the first correlation with the temperature within the first temperature range, and based on the second compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the second correlation with the temperature within the third temperature range.

40. The radio frequency front-end module according to claim 39, wherein: The clamp circuit is configured to make a clamp value on an output branch of the clamp circuit less than or equal to a first threshold based on either the first compensation signal or the second compensation signal.

41. The radio frequency front-end module according to claim 34, wherein: The target temperature range also includes a second temperature range located between the first temperature range and the third temperature range. In the second temperature range, the protection circuit is configured so that the bias circuit is independent of the clamping value and temperature on the output branch of the protection circuit, and the bias source signal on the output branch of the bias control circuit is independent of temperature.

42. A radio frequency front-end module, characterized in that: include: A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; A power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; The bias circuit is connected to a protection circuit, and the protection circuit is configured such that a clamping value on an output branch connected to the protection circuit and the bias circuit is positively correlated with temperature within a first temperature range, wherein a maximum value of the first temperature range is less than a first temperature threshold; The protection circuit is configured such that a clamping value of the bias circuit and an output branch of the protection circuit is negatively correlated with temperature within a third temperature range, wherein a minimum value of the third temperature range is greater than a second temperature threshold; The clamping value is used to clamp the maximum value of the bias signal output by the bias circuit.

43. The radio frequency front-end module according to claim 42, wherein: The maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

44. The radio frequency front-end module according to claim 42, wherein: The protection circuit includes a temperature compensation circuit and a clamping circuit, wherein the temperature compensation circuit is connected to an input end of the clamping circuit, and an output end of the clamping circuit is connected to the bias circuit; In which, the temperature compensation circuit is used to output a first compensation signal or a second compensation signal, the first compensation signal has the third correlation with the temperature within the first temperature range, and the second compensation signal has the fourth correlation with the temperature within the third temperature range; the clamping circuit is configured to, based on the first compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the first correlation with the temperature within the first temperature range, and based on the second compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the second correlation with the temperature within the third temperature range.

45. The radio frequency front-end module according to claim 44, characterized in that: The clamp circuit is configured to make a clamp value on an output branch of the clamp circuit less than or equal to a first threshold based on either the first compensation signal or the second compensation signal.

46. ​​The radio frequency front-end module according to claim 42, wherein: In a second temperature range, the clamping value on the output branch of the protection circuit is independent of temperature, and the second temperature range is located between the first temperature range and the third temperature range.

47. A radio frequency front-end module, characterized in that: include: A substrate and a first chip and a second chip disposed on the substrate; the first chip includes a power amplifier circuit and a bias circuit for providing a bias signal to the power amplifier circuit; the second chip includes a protection circuit connected to the bias circuit; The protection circuit is configured such that a clamping value on an output branch connected to the protection circuit and the bias circuit has a first correlation with temperature within a first temperature range and a second correlation with temperature within a third temperature range, wherein a minimum value of the third temperature range is greater than a maximum value of the first temperature range; The protection circuit includes a temperature compensation circuit and a clamping circuit, wherein the temperature compensation circuit is configured to output a first compensation signal to the compensation node in the first temperature range and output a second compensation signal to the compensation node in the third temperature range, the clamping circuit is connected to a branch of the temperature compensation circuit where the compensation node is located, and an output end of the clamping circuit is connected to the bias circuit; Furthermore, the clamping circuit is configured to, based on the first compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the first correlation with the temperature within a first temperature range, and based on the second compensation signal, cause the bias circuit and the clamping value on the output branch of the clamping circuit to have the second correlation with the temperature within a third temperature range, wherein the clamping value is used to clamp the maximum value of the bias signal output by the bias circuit.

48. The radio frequency front-end module according to claim 47, characterized in that: The maximum value of the bias signal output by the bias circuit is less than or equal to the clamping value.

49. The radio frequency front-end module according to claim 47, wherein: The first compensation signal has a third correlation with the temperature within the first temperature interval, and the second compensation signal has a fourth correlation with the temperature within the third temperature interval that is different from the third correlation.

50. The radio frequency front-end module according to claim 49, wherein: The clamp circuit is configured to make a clamp value on an output branch of the clamp circuit less than or equal to a first threshold based on either the first compensation signal or the second compensation signal.

51. The radio frequency front-end module according to claim 47, wherein: In a second temperature range, the clamping value on the output branch of the protection circuit is independent of temperature, and the second temperature range is located between the first temperature range and the third temperature range.

52. A communication device, characterized in that The communication device includes a radio frequency front-end module according to any one of claims 1 to 51 and an antenna module connected to the radio frequency front-end module.

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