Silicon-based optoelectronic chip for cross-band hybrid demultiplexing

Abstract

The application provides a broadband wavelength-polarization-mode (de)multiplexing chip and a cross-wavelength supporting method. The chip comprises a signal coupling module, a signal light conversion module and a cross-wavelength signal light uploading / download module. The signal conversion module is formed by introducing a specific structure on at least one transmission waveguide. The cross-wavelength signal light uploading / download module is formed by at least one coupling structure and a specific etching structure introduced in the coupling structure. The application locally processes the whole silicon-based optoelectronic integrated chip required for multi-wavelength hybrid multiplexing, realizes low transmission loss and low crosstalk (de)multiplexing, and provides a flexible multi-wavelength hybrid multiplexing platform for the silicon-based optoelectronic integrated chip.

Description

Technical Field

[0001] This invention belongs to the field of optical communication technology, and in particular, it designs a wide-band hybrid (de)multiplexed silicon-based optoelectronic chip. Background Technology

[0002] The rapid development of information technology, artificial intelligence, and other fields has created higher demands for optical interconnect networks, primarily in terms of greater communication capacity and higher signal quality. To improve the information capacity of a single channel, multiplexing technologies such as wavelength division multiplexing (WDM) and space division multiplexing (SDM) have been developed. Among these, SDM technology provides a new spatial dimension for channel capacity expansion, and mode division multiplexing (MDM) within SDM technology has shown great potential in high-capacity optical interconnect networks due to its high space utilization. To improve the quality of transmitted signals, optical amplification technology is used to compensate for signal power loss caused by fiber loss, thereby reducing the bit error rate at the receiver. Compared to single-mode amplification, few-mode amplification technology can further improve the gain of optical amplification and is more suitable for high-power amplification systems. On-chip integrated high-performance mode division multiplexers are crucial components for realizing high-channel-capacity communication and achieving monolithic few-mode amplification chips.

[0003] Numerous works have been published in the WDM (Wavelength Division Multiplexing) field. These include mode division multiplexing systems using directional coupler microring resonators, multiplexing systems utilizing hybrid wavelength, mode, and polarization multiplexing techniques, mode division multiplexing systems based on multimode interferometer (MMI) structures, and mode multiplexing systems utilizing subwavelength grating structures, among others. However, most of these works are only focused on the C-band, and few can achieve cross-band multiplexing with a single mode division multiplexing chip. Cross-band mode division multiplexing systems provide technical support for high-performance optoelectronic computing with multiple information dimensions and multi-band collaborative communication. Furthermore, cross-band mode division multiplexing systems serve as on-chip platforms for realizing few-mode waveguide amplifiers, enabling the coupling of the amplifier's pump light and signal light, and reducing the reliance on passive components such as DC and ybranch in the waveguide amplifier.

[0004] Crosstalk between signals of different frequency bands is a major challenge in the design of cross-band multiplexing systems. Currently available structures that can reduce cross-band crosstalk mainly include three-waveguide coupler structures and micro-ring structures. However, existing structures cannot simultaneously provide low-loss and wide-bandwidth performance, thus limiting the implementation of multi-band systems. Summary of the Invention

[0005] To overcome the problems of the prior art, the present invention provides a wide bandwidth hybrid wavelength-polarization-mode (demultiplexing) chip.

[0006] The technical solution of the present invention is as follows:

[0007] A cross-band hybrid (demultiplexed) silicon-based optoelectronic chip includes a signal coupling module, a signal-to-optical conversion module, a cross-band signal-to-optical upload / download module, and a signal processing module. The chip is characterized by further including a cross-band (demultiplexed) module; the cross-band (demultiplexed) module is formed by introducing a specific etching structure into the coupling structure.

[0008] Optionally, the specific etch structure includes a gradient conical structure, a ridge structure, a periodic structure such as a grating, and other structures.

[0009] Optionally, the depth and width of the specific etched structure in the cross-band (de)multiplexing module are adjusted according to the optical field distribution after passing through the signal light processing module and the channel to be loaded or downloaded;

[0010] Optional specific etching structures include: gradient cone, ridge, subwavelength grating, etc.

[0011] Optionally, the chip supports at least two and / or more bands;

[0012] Optionally, the chip supports at least one and / or more modes;

[0013] Optionally, the signal input / output module consists of a coupler;

[0014] Optionally, the coupler structure includes coupling structures such as grating couplers, fiber optic coupling arrays, waveguide directional couplers, and thermally insulating couplers;

[0015] Optionally, the signal light conversion module is composed of a polarization conversion structure;

[0016] Optionally, the polarization conversion structure includes an apodized structure, a subwavelength grating structure, a tapered cone structure, a ridge waveguide structure, and / or

[0017] The aforementioned structural basis is a combined structure;

[0018] Optionally, the signal processing module includes signal transmission, signal amplification, signal processing, photoelectric computing, and other processing methods.

[0019] Optionally, the chip is designed on platforms such as silicon-on-insulator (SOI), silicon nitride, lithium niobate, and silicon carbide.

[0020] This invention also provides a cross-band support method, which performs local processing on the part of the entire silicon-based optoelectronic integrated chip or system that needs cross-band (de)multiplexing, introduces a partial etching structure in the coupling structure of the required cross-band, and designs the working parameters of the etching structure for the cross-band, effectively realizing wide-band cross-band (de)multiplexing, and providing support for the realization of cross-band in silicon-based optoelectronic chip systems.

[0021] Compared with the prior art, the present invention, by adopting the above technical solution, has at least the following technical effects:

[0022] (1) Based on coupling theory, this invention achieves the uploading and downloading of signal light in different bands by partially etching the coupling structure. Due to the new phase matching conditions introduced by partial etching, it can be well designed for different bands, with very low crosstalk and transmission loss, and a wide operating bandwidth.

[0023] (2) The present invention only processes the coupling part locally, the implementation method is simple, and it can be well adapted to existing production processes.

[0024] (3) This invention can support multiple bands, providing a new dimension for silicon-based optoelectronic chips in the existing optical communication field. It directly expands the operating bands of monolithic silicon-based optoelectronic chips, thereby further improving the data interconnection capacity of the chip. At the same time, the realization of cross-band is also the foundation for realizing monolithically integrated on-chip optical amplification technology. Cross-band multiplexers are key components for realizing multi-band optoelectronic systems such as high-capacity multiplexing chips and on-chip optical amplification chips. Attached Figure Description

[0025] Figure 1 This is a structural block diagram of the present invention.

[0026] Figure 2 This is a diagram of the etched structure region of the signal conversion module in this invention. The etched structure includes, but is not limited to, ridge waveguide structures, phantom micro-ring structures, gratings, and other periodic structures.

[0027] Figure 3 This refers to the etched structure area of ​​the signal upload / download module in this invention. The etched structure includes, but is not limited to, ridge waveguide structures, morphing micro-ring structures, gratings, and other periodic structures.

[0028] Figure 4 It is a hybrid wavelength division-polarization-mode division (demultiplexing) chip that spans the 980nm and 1550nm bands, based on asymmetric ridge waveguides.

[0029] Among them, 1, 2, 3, and 4 are 1550nm band optical signal input ports, 6, 7, 8, and 9 are 980nm band optical signal input ports, 5 is a (de)multiplexed bus waveguide, 10 and 11 are 1550nm band polarization converters, 12 and 13 are 980nm band polarization converters, 16, 17, 20, and 21 are 1550nm band signal optical loading and downloading structures, and 14, 15, 18, and 19 are 980nm band signal optical loading and downloading structures. The upload and download structure is an asymmetric ridge waveguide structure. Detailed Implementation

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following description is based on a specific embodiment of the present invention: a hybrid wavelength division-polarization-mode division (demultiplexing) chip across the 980nm and 1550nm bands implemented using an asymmetric ridge waveguide on a silicon nitride platform.

[0031] Figure 1 This is a structural block diagram of the present invention.

[0032] The coupling module, consisting of band 1, band 2, ..., band N coupling modules, is used to couple signal light between the chip and the optical fiber, enabling interconnection between the chip and the outside world. The input / output light through the coupling module contains N (N>1) bands, and each band contains at least two single-polarization fundamental mode signals.

[0033] The signal light conversion module includes first-band, second-band...Nth-band light conversion modules. The first-band light conversion module is used to convert the polarization state of a portion of the signal light in at least two single-polarized fundamental mode signals of the input first band, or to convert the polarization state of a portion of the signal light in the input multi-channel mixed-polarized signal light of the first band into a single-polarized multi-channel signal light. The second-band, third-band...Nth-band signal light conversion modules are the same as those for the first band.

[0034] The cross-band signal light upload / download module uploads signals with different polarization states from the signal light conversion modules of band 1, band 2...band N to the bus, or downloads multiple signal lights of each band (band 1, band 2...band N) transmitted on the bus to the corresponding optical conversion modules of band 1, band 2...band N. These optical conversion modules then convert the signals into multiple output signals with the same polarization in band 1, band 2...band N, and output them through the coupling module.

[0035] The input / output consists of N band signals: the first band contains X1 signals, namely CH11, CH12, ..., CH1X1; the second band contains x2 signals, namely CH21, CH22, CH2X2; ...; the Nth band contains XN signals, namely CHN1, CHN2, CHNXN;

[0036] Figure 2Schematic diagram of the polarization conversion waveguide in the optical signal conversion module of the present invention. The optical signal processing module of the present invention includes optical conversion modules for the first band, the second band... the Nth band; the first band optical signal converter includes X1 waveguides, and is respectively connected to the input signals CH11, CH12... CH1X1 of the corresponding bands, among which T1 waveguides (T1 < X1) adopt specific shallow etching, including periodic structures such as tapered structures, ridge structures, gratings, etc. After the optical signals of CH11, CH12,..., CH1T1 pass through these structures, the polarization deflects 90 degrees and is input into the cross-band upload / download module in parallel with other signals; the second band optical signal converter includes X2 waveguides, among which T2 waveguides (T2 < X2), and the waveguides of CH21, CH22... CH2T2 input signals adopt specific shallow etching. After this part of the optical signals pass through these structures, the polarization deflects 90 degrees and is input into the cross-band upload / download module in parallel with other signals;...; the Nth band optical signal converter includes XN waveguides, among which TN waveguides (TN < XN), and the waveguides of CHN1, CHN2... CHNTN input signals adopt specific shallow etching. After this part of the optical signals pass through these structures, the polarization deflects 90 degrees and is input into the cross-band upload / download module in parallel with other signals;

[0037] Or, the first band signals CH11, CH12... CH1X1 output in parallel from the cross-band upload / download module are input into the first band optical signal conversion module. Among them, T1 waveguides (T1 < X1) adopt specific shallow etching. After the optical signals of CH11, CH12,..., CH1T1 pass through these structures, the polarization deflects 90 degrees and is input into the coupling module in parallel with other signals; the second band signals output in parallel from the cross-band upload / download module are input into the first band optical signal conversion module. Among them, T2 waveguides (T2 < X2), and the waveguides of CH21, CH22... CH2T2 input signals adopt specific shallow etching. After this part of the optical signals pass through these structures, the polarization deflects 90 degrees and is input into the coupling module in parallel with other signals;...; the Nth band signals output in parallel from the cross-band upload / download module are input into the first band optical signal conversion module. Among them, TN waveguides (TN < XN), and the waveguides of CHN1, CHN2... CHNTN input signals adopt specific shallow etching. After this part of the optical signals pass through these structures, the polarization deflects 90 degrees and is input into the coupling module in parallel with other signals;

[0038] The shallow etched regions in waveguides CH11, CH12, ..., CH1T1 of the first-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the first band. The transmission optical axis is deflected by 45° to achieve polarization conversion of the channel signal. Similarly, the shallow etched regions in waveguides CH21, CH22, ..., CH2T2 of the second-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the second band. The transmission optical axis is deflected by 45° to achieve polarization conversion of the channel signal. ... The shallow etched regions in waveguides CHN1, CHN2, ..., CHNT1 of the Nth-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the Nth band. The transmission optical axis is deflected by 45° to achieve polarization conversion of the channel signal.

[0039] Figure 3 This invention relates to a cross-band signal upload / download module. This module receives all input signal light from the first, second, ..., Nth bands in parallel. Each signal light has a separate channel (CH11, CH12, ..., CH1X1, CH21, CH22, ..., CH2X2, ..., CHN1, CHN2, ..., CHNXN). Specifically, the X1 signals CH11, CH12, ..., CH1T1, ..., CH1X1 from the first band are loaded into the mode and polarization channels of the first band in the bus (TM10, TM11, ..., TM1(T1-1); TE10, TE11, ..., TE1(X1-T1-1)); and the X2 signals CH21, CH22, ..., CH2T2, ..., CH2X2 from the second band are loaded into the mode and polarization channels of the second band in the bus (TM...). 20, TM21, ..., TM2(T2-1); TE20, TE21, ..., TE2(X2-T2-1)); ...; where XN signals CHN1, CHN2, ..., CHNTN, ..., CHNXN in the Nth band will be coupled into the multi-band multi-mode transmission light in the mode and polarization channels of the Nth band loaded into the bus (TMN0, TMN1, ..., TMN(TN-1); TEN0, TEN1, ..., TEN(XN-TN-1)).

[0040] Alternatively, the cross-band upload / download module may download the first-band signal (TMN0, TMN1, ..., TMN(TN-1); TEN0, TEN1, ..., TEN(XN-TN-1)) from the multi-band, multi-mode transmission light in the bus waveguide to the corresponding individual channels CH11, CH12, ..., CH1X1, and output it to the first-band optical signal conversion module; and download the second-band signal (TM20, TM21, ..., TM2(T2-1); TE20, TE... .... 21, ..., TE2(X2-T2-1)) are downloaded to the corresponding individual channels (CH21, CH22, ..., CH2X2) and output to the second band optical signal conversion module; ...; the Nth band signal (TMN0, TMN1, ..., TMN(TN-1); TEN0, TEN1, ..., TEN(XN-TN-1)) is downloaded to the corresponding single-multi-channel (CHN1, CHN2, ..., CHNXN) and output to the Nth band optical signal conversion module.

[0041] The shallow etched areas of the cross-band upload / download module include structures such as gradient conical structures, ridge structures, and periodic structures like gratings. The depth, width, and structural parameters of each channel (CH11, CH12...CH1X1, CH21, CH22...CH2X2, ..., CHN1, CHN2...CHNXN) are designed based on the optical field distribution at the transmission signal light and the channels to be loaded or downloaded (TM10, TM11, ..., TM1(T1-1); TE10, TE11, ..., TE1(X1-T1-1); TM20, TM21, ..., TM2(T2-1); TE20, TE21, ..., TE2(X2-T2-1); ...; TMN0, TMN1, ..., TMN(TN-1); TEN0, TEN1, ..., TEN(XN-TN-1)) to ensure that the coupling conditions of each channel are satisfied independently.

[0042] A specific embodiment of the present invention designs a 980nm / 1550nm cross-band hybrid wavelength-polarization-mode multiplexer (de), such as... Figure 2 As shown, this multiplexer supports 16 modes across two wavelength bands (1550nm and 980nm), two polarization modes (TE and TM), and four modes (2x2x4). In the MUX, channels for different modes are established through coupling. The signals in the higher-order mode channels at each wavelength are generated from the input TE0 mode signal, which is then coupled into higher-order mode signals and loaded into the main line after passing through devices such as polarization converters, deflection beam splitters, and couplers. The coupler uses an asymmetric directional coupler, the polarization converter uses a partially etched subwavelength grating structure, and the polarization beam splitter uses a half-ridge waveguide structure.

[0043] Four 1550nm band TE0 fundamental mode signal beams enter the multiplexing chip from ports 1, 2, 3, and 4. Then, the TE0 signals at ports 2 and 4 are converted from TE0 mode to TM0 mode by polarization converters 10 and 11 implemented by subwavelength gratings. Subsequently, the four signal beams are coupled through coupling structures 16, 17, 20, and 21 respectively to load the signal beams in TE0 mode or TM0 mode into the 1550nm TE0, TM0, TE1, and TM1 channels in the bus waveguide for transmission.

[0044] Four 980nm band TE0 fundamental mode signal beams enter the multiplexing chip from ports 6, 7, 8, and 9. The signal beams from ports 7 and 9 are converted from TE0 mode to TM0 mode after passing through oscillator converters 12 and 13. Subsequently, the four signal beams pass through coupling structures 14, 15, 18, and 19 to transmit the signal beams in TE0 or TM0 mode to the TE0, TM0, TE1, and TM1 channels in the 1550nm band of the bus waveguide, respectively.

[0045] The above describes the implementation of the multiplexing function of the hybrid wavelength division-polarization-mode division (demultiplexing) chip across the 980nm and 1550nm bands using an asymmetric ridge waveguide according to an embodiment of the present invention. The demultiplexing function is the reverse process described above.

[0046] The above description is merely a specific embodiment of the hybrid wavelength division-polarization-mode division (demultiplexing) chip spanning the 980nm and 1550nm bands in this invention. However, the scope of protection of this invention is not limited thereto. Any transformations or substitutions that can be conceived by those skilled in the art within the technical scope disclosed in this invention should be included within the scope of this invention. Therefore, the scope of protection of this invention should be determined by the scope of the claims.

Claims

1. A cross-band hybrid demultiplexing silicon-based optoelectronic chip, characterized in that, It includes a coupling module, a signal-to-optical conversion module, a cross-band signal-to-optical upload / download module, and a signal processing module; The coupling module consists of a first band, a second band, ..., a Nth band coupling module, used to couple signal light between the chip and the optical fiber to achieve interconnection between the chip and the outside world; the input / output light through the coupling module contains N bands, N>1, and each band contains at least two single-polarization fundamental mode signals; The signal light conversion module comprises first-band, second-band...Nth-band light conversion modules. The first-band light conversion module is used to convert the polarization state of a portion of the signal light from at least two single-polarized fundamental mode signals in the first-band input, or to convert the polarization state of a portion of the signal light from multiple mixed-polarized signal lights in the first-band input, into multiple signal lights with a single polarization state. Similarly, the Nth-band light conversion module is used to convert the polarization state of a portion of the signal light from at least two single-polarized fundamental mode signals in the Nth-band input, or to convert the polarization state of a portion of the signal light from multiple mixed-polarized signal lights in the Nth-band input, into multiple signal lights with a single polarization state. The cross-band signal light upload / download module is used to upload signals with different polarization states from the signal light conversion modules of the 1st band, 2nd band...Nth band to the bus, or download multiple signal lights of each band transmitted in the bus to the corresponding 1st band, 2nd band...Nth band optical conversion modules. The signals are then converted by each band optical conversion module into multiple output signals with the same polarization in the 1st band, 2nd band...Nth band, and output through the corresponding coupling module.

2. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 1, characterized in that, The input / output consists of N band signals: the first band contains X1 signals, namely CH11, CH12, ..., CH1X1; the second band contains x2 signals, namely CH21, CH22, CH2X2; ...; the Nth band contains XN signals, namely CHN1, CHN2, CHNXN.

3. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 1, characterized in that... The optical signal conversion module includes optical conversion modules for the 1st band, the 2nd band... the Nth band; the 1st band optical signal converter includes X1 waveguides, which are respectively connected to the input signals CH11, CH12... CH1X1 of the corresponding bands. Among them, T1 waveguides use specific shallow etching, where T1 < X1. The structures include tapered structures, ridge structures, and grating periodic structures. After the optical signals of CH11, CH12,..., CH1T1 pass through these structures, the polarization deflects by 90 degrees and is input into the cross-band upload / download module in parallel with other signals; the 2nd band optical signal converter includes X2 waveguides, among which T2 waveguides, the waveguides for the input signals CH21, CH22... CH2T2 use specific shallow etching, where T2 < X2. After this part of the optical signals pass through these structures, the polarization deflects by 90 degrees and is input into the cross-band upload / download module in parallel with other signals;...; the Nth band optical signal converter includes XN waveguides, among which TN waveguides, the waveguides for the input signals CHN1, CHN2... CHNTN use specific shallow etching, where TN < XN. After this part of the optical signals pass through these structures, the polarization deflects by 90 degrees and is input into the cross-band upload / download module in parallel with other signals. Alternatively, the 1st band signals CH11, CH12... CH1X1 output in parallel from the cross-band upload / download module are input into the 1st band optical signal conversion module. Among them, T1 waveguides use specific shallow etching. After the optical signals of CH11, CH12,..., CH1T1 pass through these structures, where T1 < X1, the polarization deflects by 90 degrees and is input into the coupling module in parallel with other signals; the 2nd band signals output in parallel from the cross-band upload / download module are input into the 1st band optical signal conversion module. Among them, T2 waveguides, the waveguides for the input signals CH21, CH22... CH2T2 use specific shallow etching, where T2 < X2. After this part of the optical signals pass through these structures, the polarization deflects by 90 degrees and is input into the coupling module in parallel with other signals;...; the Nth band signals output in parallel from the cross-band upload / download module are input into the 1st band optical signal conversion module. Among them, TN waveguides, the waveguides for the input signals CHN1, CHN2... CHNTN use specific shallow etching, where TN < XN. After this part of the optical signals pass through these structures, the polarization deflects by 90 degrees and is input into the coupling module in parallel with other signals.

4. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 1, characterized in that, The cross-band upload / download module will receive all input signal light from the first, second, ..., Nth bands in parallel. Each signal light has a separate channel CH11, CH12, ..., CH1X1, CH21, CH22, ..., CH2X2, ..., CHN1, CHN2, ..., CHNXN; among them, the X1 signal CH11, CH12, ..., CH1T1, ..., CH1X1 in the first band will be loaded into the mode and polarization channels TM10, TM11, ..., TM1 (T1-1); TE10, TE11, ..., TE1 (X1-T1-1) in the bus; among them, the X1 signal in the second band... Two signals CH21, CH22, ..., CH2T2, ..., CH2X2 will be loaded into the second band mode and polarization channels TM20, TM21, ..., TM2 (T2-1); TE20, TE21, ..., TE2 (X2-T2-1); ...; where XN signals CHN1, CHN2, ..., CHNTN, ..., CHNXN in the Nth band will be loaded into the Nth band mode and polarization channels TMN0, TMN1, ..., TMN (TN-1); TEN0, TEN1, ..., TEN (XN-TN-1) and coupled into the multi-band multi-mode transmission light; Alternatively, the cross-band upload / download module may download the first-band signals TMN0, TMN1, ..., TMN(TN-1); TEN0, TEN1, ..., TEN(XN-TN-1) from the multi-band, multi-mode transmission light in the bus waveguide to the corresponding individual channels CH11, CH12, ..., CH1X1, and output them to the first-band optical signal conversion module; and download the second-band signals TM20, TM21, ..., TM2(T2-1); TE20, T... E21, ..., TE2 (X2-T2-1) are downloaded to their respective individual channels (CH21, CH22, ..., CH2X2) and output to the second-band optical signal conversion module; ...; the Nth-band signals TMN0, TMN1, ..., TMN (TN-1); TEN0, TEN1, ..., TEN (XN-TN-1) are downloaded to their respective single / multi-channel channels CHN1, CHN2, ..., CHNXN and output to the Nth-band optical signal conversion module.

5. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 3, characterized in that... The shallow etched regions in waveguides CH11, CH12, ..., CH1T1 of the first-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the first band, deflecting the transmission optical axis by 45° to achieve polarization conversion of the channel signal; the shallow etched regions in waveguides CH21, CH22, ..., CH2T2 of the second-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the second band, deflecting the transmission optical axis by 45° to achieve polarization conversion of the channel signal; ... the shallow etched regions in waveguides CHN1, CHN2, ..., CHNT1 of the Nth-band optical signal processing module have their depth, width, and structural parameters designed based on the optical field distribution of the input signal light in the Nth band, deflecting the transmission optical axis by 45° to achieve polarization conversion of the channel signal.

6. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 4, characterized in that, The shallow etched region of the cross-band upload / download module includes a gradient conical structure, a ridge structure, and a grating periodic structure. The depth, width, and structural parameters of each channel CH11, CH12….CH1X1, CH21, CH22….CH2X2, …, CHN1, CHN2….CHNXN are designed based on the optical field distribution at the transmission signal light and the required loading or download channels TM10, TM11, …, TM1 (T1-1); TE10, TE11, …, TE1 (X1-T1-1); TM20, TM21, …, TM2 (T2-1); TE20, TE21, …, TE2 (X2-T2-1); …; TMN0, TMN1, …, TMN (TN-1); TEN0, TEN1, …, TEN (XN-TN-1) to ensure that the coupling conditions of each channel are met individually.

7. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to any one of claims 1-6, characterized in that, The chip supports at least two and / or more bands; and supports at least one and / or more modes.

8. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to any one of claims 1-6, characterized in that, Signal coupler structures include grating couplers, fiber optic coupler arrays, waveguide directional couplers, and thermal couplers.

9. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 1, characterized in that, The signal light conversion module is composed of polarization conversion structures; the polarization conversion structures include apodized structures, subwavelength grating structures, tapered cone structures, ridge waveguide structures, and / or basic combinations of the aforementioned structures.

10. The cross-band hybrid demultiplexing silicon-based optoelectronic chip according to claim 1, characterized in that, The signal processing module includes signal transmission, signal amplification, signal processing, and photoelectric computing processing.

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