MEMS sensor and electronic atomization device

Abstract

The application discloses a MEMS sensor and an electronic atomization device. The MEMS sensor comprises a substrate, a passivation layer, a substrate, a first force applying element, a second force applying element and a conductive contact. The first surface of the substrate has a groove, and the second surface has a Wheatstone bridge circuit. The passivation layer covers the second surface of the substrate. The substrate covers the groove to form a sealed cavity with the substrate. At least part of the first force applying element is arranged on the side of the passivation layer away from the substrate. At least part of the second force applying element is arranged on the bottom wall of the groove. The conductive contact is arranged on the substrate and / or the substrate. The first force applying element and the second force applying element are both configured to apply a force close to or away from the substrate to the bottom wall of the groove under the condition of being powered on. In this way, the substrate can always be in a flat initial state, thereby improving the problem that the deformation of the substrate does not change linearly with the pressure, and improving the detection accuracy of the MEMS sensor.

Description

Technical Field

[0001] This application relates to the field of sensor technology, specifically to a MEMS sensor and an electronic atomization device. Background Technology

[0002] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, it has been widely applied in the sensor field. Traditional MEMS piezoresistive pressure sensors are based on the piezoresistive effect of single-crystal silicon. They typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals, and the magnitude of the external pressure signal can be determined by measuring the value of this electrical signal. However, this type of MEMS piezoresistive pressure sensor suffers from inaccurate detection. Summary of the Invention

[0003] This application provides a MEMS sensor and an electronic atomization device to solve the problem of inaccurate detection by MEMS sensors.

[0004] According to a first aspect of this application, some embodiments of this application provide a MEMS sensor, including a substrate, a passivation layer, a base plate, a first force-applying element, a second force-applying element, and conductive contacts; the substrate has opposing first and second surfaces; the first surface has a groove, and the second surface has a Wheatstone bridge circuit, the arms of the Wheatstone bridge circuit including varistors; the passivation layer covers the second surface of the substrate; the base plate covers the groove to form a sealed cavity with the substrate; the first force-applying element is at least partially disposed on the side of the passivation layer away from the substrate; the second force-applying element is at least partially disposed on the bottom wall of the groove; the conductive contacts are disposed on the substrate and / or the base plate, and are electrically connected to the first force-applying element and the second force-applying element, respectively; wherein the first force-applying element and the second force-applying element are both configured to apply a force toward or away from the base plate to the bottom wall of the groove when energized.

[0005] In some embodiments, the first force-applying element includes a first lower electrode plate and a first upper electrode plate, the first lower electrode plate being disposed on the surface of the passivation layer away from the substrate; the first upper electrode plate being disposed at a distance from the side of the first lower electrode plate away from the substrate; wherein the first upper electrode plate and the first lower electrode plate are configured to repel or attract each other when energized.

[0006] In some embodiments, the edge portion of the first upper electrode is disposed on the surface of the passivation layer away from the substrate, and the middle portion is suspended on the side of the first lower electrode away from the substrate; wherein, the middle portion of the first upper electrode and the first lower electrode form a parallel plate capacitor; the conductive contact includes a first conductive contact electrically connected to the first upper electrode and a second conductive contact electrically connected to the first lower electrode.

[0007] In some embodiments, one of the first upper electrode plate and the first lower electrode plate comprises a permanent magnet material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet. Optionally, in some embodiments, the conductive contact is electrically connected to both the first upper electrode plate and the first lower electrode plate to change the polarity of the electromagnet.

[0008] In some embodiments, the first force-applying element includes a first deformable material layer disposed on the surface of the passivation layer away from the substrate, the first deformable material layer being configured to deform under energization, thereby applying a force toward or away from the substrate to the bottom wall of the groove.

[0009] In some embodiments, the second force-applying element includes a second lower electrode plate and a second upper electrode plate; the second lower electrode plate is disposed on the surface of the substrate exposed to the sealed cavity; the second upper electrode plate is disposed on the bottom surface of the groove; wherein the second upper electrode plate and the second lower electrode plate constitute a parallel plate capacitor; the conductive contact includes a third conductive contact electrically connected to the second upper electrode plate and a fourth conductive contact electrically connected to the second lower electrode plate.

[0010] In some embodiments, the second force-applying element includes a second lower electrode plate and a second upper electrode plate. The second lower electrode plate is disposed on the surface of the substrate exposed to the sealed cavity; the second upper electrode plate is disposed on the bottom surface of the groove. One of the second upper electrode plate and the second lower electrode plate comprises a permanent magnet material, and the other is an electromagnet. The conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet. Optionally, both the first upper electrode plate and the second lower electrode plate are electromagnets; the conductive contact is electrically connected to both the first upper electrode plate and the second lower electrode plate to change the polarity of the electromagnet.

[0011] In some embodiments, the second force-applying element includes a second deformable material layer disposed on the bottom surface of the groove, the second deformable material layer being configured to deform under energization, thereby applying a force toward or away from the substrate to the bottom wall of the groove.

[0012] In some embodiments, the Wheatstone bridge circuit includes four sets of varistors that change resistance in response to pressure changes applied to the substrate, thereby converting the pressure signal into an electrical signal; the Wheatstone bridge circuit also includes four sets of conductive regions for leading out the electrical signal.

[0013] In some embodiments, the substrate is a semiconductor substrate; each group of varistors includes two parallel and spaced sub-varistors, and a heavily doped ohmic contact region formed between the sub-varistors, the heavily doped ohmic contact region being used to electrically connect the sub-varistors in the group of varistors.

[0014] In some embodiments, the varistor and the heavily doped ohmic contact region are formed on the substrate, which is also covered with a dielectric layer, and four sets of the conductive regions are formed on the dielectric layer.

[0015] In some embodiments, the side of the dielectric layer away from the substrate is also covered by the passivation layer, and the four sets of conductive regions are at least partially exposed in the passivation layer.

[0016] According to a second aspect of this application, some embodiments of this application provide an electronic atomization device, including a liquid storage unit, an atomization component, a MEMS sensor, and a power supply. The liquid storage unit is used to store an aerosol generation matrix; the atomization component is used to atomize the aerosol generation matrix; the MEMS sensor is the MEMS sensor provided in any embodiment; the MEMS sensor is disposed on the airflow channel of the electronic atomization device and is used to detect air pressure changes within the airflow channel; the power supply is used to provide voltage to the atomization component and the MEMS sensor.

[0017] In some embodiments, the electronic atomizing device further includes a control circuit electrically connected to the power supply, the atomizing component, and the MEMS sensor, respectively. The control circuit is used to control the power supply to apply an electrical signal to the first force-applying element and / or the second force-applying element based on the amount of change in the output voltage of the MEMS sensor caused by the change in air pressure within the airflow channel. This causes the first force-applying element and / or the second force-applying element to apply a force close to or away from the substrate to the bottom wall of the groove, so that the amount of change in the output voltage of the MEMS sensor is less than or equal to a preset threshold.

[0018] In some embodiments, the preset threshold is zero; the control circuit is further configured to detect whether the change in the output voltage of the MEMS sensor is zero, and when the change in the output voltage of the MEMS sensor is detected to be zero, to determine the magnitude of the air pressure based on the electrical signal applied to the deformable material layer.

[0019] According to the MEMS sensor of the above embodiments, when the substrate is subjected to gas pressure away from the substrate, a DC voltage can be applied to the first and / or second force-applying elements, causing the first and / or second force-applying elements to exert a force close to the substrate on the bottom wall of the groove, which cancels out the gas pressure. When the substrate is subjected to gas pressure close to the substrate, a DC voltage can be applied to the first and / or second force-applying elements, causing the first and / or second force-applying elements to exert a force away from the substrate on the bottom wall of the groove, which cancels out the gas pressure, thereby keeping the substrate in a flat state. Therefore, the deformation of the substrate is always small throughout the suction process, thereby improving the problem that the substrate deformation does not change ideally linearly with the pressure, and thus improving the detection accuracy of the MEMS sensor of this application embodiment. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 Top view of a MEMS sensor provided for some embodiments of this application;

[0022] Figure 2 For this application Figure 1 The top view without the first force-applying element and passivation layer is shown.

[0023] Figure 3 for Figure 1 A schematic cross-sectional view along line III-III;

[0024] Figure 4 This is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0025] Figure 5 This application provides schematic diagrams of the structure of MEMS sensors in some of its embodiments.

[0026] Figure 6 This is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0027] Figure 7 This application provides schematic diagrams of the structure of MEMS sensors in some of its embodiments.

[0028] Figure 8This is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0029] Figure 9 This is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0030] Figure 10 for Figure 9 Schematic diagram of the structure of the first deformable material layer in the middle;

[0031] Figure 11 Top view of a MEMS sensor provided for some embodiments of this application;

[0032] Figure 12 This is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0033] Figure 13 for Figure 12 Bottom view of the middle substrate;

[0034] Figure 14 Flowcharts illustrating MEMS sensor fabrication methods provided in some embodiments of this application;

[0035] Figure 15 for Figure 14 Flowchart of step S10;

[0036] Figure 16 for Figure 15 A schematic diagram of the structure obtained after step S11;

[0037] Figure 17 for Figure 15 A schematic diagram of the structure obtained after step S12;

[0038] Figure 18 for Figure 15 Flowchart of S13 in the middle;

[0039] Figure 19 for Figure 18 The structural schematic diagram obtained in step S131;

[0040] Figure 20 for Figure 18 A schematic diagram of the structure obtained after step S132;

[0041] Figure 21 for Figure 20 Top view;

[0042] Figure 22 for Figure 15 A schematic diagram of the structure obtained after step S14;

[0043] Figure 23 for Figure 22Top view;

[0044] Figure 24 for Figure 14 Flowchart of step S20;

[0045] Figure 25 for Figure 24 A schematic diagram of the structure obtained after step S21;

[0046] Figure 26 for Figure 24 A schematic diagram of the structure obtained after step S22;

[0047] Figure 27 for Figure 24 A schematic diagram of the structure obtained after step S23;

[0048] Figure 28 for Figure 14 Flowchart of step S30;

[0049] Figure 29 for Figure 28 A schematic diagram of the structure obtained after step S31;

[0050] Figure 30 for Figure 28 A schematic diagram of the structure obtained after step S32;

[0051] Figure 31 for Figure 14 Flowchart of step S40;

[0052] Figure 32 for Figure 31 A schematic diagram of the structure obtained after step S41;

[0053] Figure 33 for Figure 31 A schematic diagram of the structure obtained after step S42;

[0054] Figure 34 for Figure 31 A schematic diagram of the structure obtained after step S43;

[0055] Figure 35 for Figure 14 A schematic diagram of the structure obtained after step S50;

[0056] Figure 36 This is a schematic diagram of the structure of an electronic atomizing device provided in some embodiments of this application;

[0057] Figure 37 for Figure 36 Functional module diagram of an electronic atomizing device.

[0058] Explanation of icon numbers:

[0059] 10-Substrate, 11-First surface, 12-Second surface, 13-Groove, 14-Wheatstone bridge circuit, 140-Varistor, 141-Sub-Varistor, 142-Conductive region, 143-Heavily doped ohmic contact region, 144-Conductive lead, 15-Dielectric layer, 17-First conductive hole, 18-Second conductive hole; 20-Substrate, 23-Third conductive hole, 24-Fourth conductive hole; 30-Passivation layer, 40-First force-applying element, 41-First upper electrode, 410-Release hole, 42-First lower electrode, 43-First deformation material layer, 430-First thermally deformable material layer, 431-First conductive heating layer, 432-First sub-deformation layer Material layer; 433-Second sub-deformation material layer; 50-Second force application element; 51-Second upper electrode plate; 510-First lead wire; 52-Second lower electrode plate; 53-Second deformation material layer; 530-Second thermo-deformation material layer; 531-Second conductive heating layer; 60-Conductive contact; 61-First conductive contact; 62-Second conductive contact; 63-Third conductive contact; 64-Fourth conductive contact; 70-Sacrificial layer; 100-MEMS sensor; 200-Liquid storage component; 300-Atomization component; 400-Control circuit; 500-Power supply; 1000A-Liquid storage unit; 1000B-Control unit; 1000-Electronic atomization device. Detailed Implementation

[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing description of the drawings, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that comprises a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such processes, methods, products, or apparatus.

[0062] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0063] In the description of the embodiments of this application, the technical terms "first," "second," "third," etc., are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more (including two), such as two, three, etc., unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0064] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0065] In the description of the embodiments of this application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the relative orientation or positional relationship between the components in a certain posture (as shown in the accompanying drawings) as shown in the drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0066] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0067] In recent years, with the rapid development of MEMS technology, it has been widely applied in the sensor field. Traditional MEMS sensors are based on the piezoresistive effect of single-crystal silicon, and typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. The magnitude of the external pressure signal is obtained by measuring the value of this electrical signal.

[0068] However, the inventors of this application discovered through research that as the external pressure increases, the displacement (or "deformation") of the strain membrane in the sensor structure will not always exhibit an ideal linear change, causing the resistance value of the bridge arm of the Wheatstone bridge to not always exhibit a linear change, which in turn leads to poor linearity of the test results. This type of MEMS sensor has the problem of inaccurate detection.

[0069] The inventors of this application have conducted in-depth research on MEMS sensor structures. The MEMS sensor provided in this application includes a substrate, a passivation layer, a base plate, a first force-applying element, a second force-applying element, and conductive contacts. The substrate has opposing first and second surfaces. The first surface has a groove, and the second surface has a Wheatstone bridge circuit, the bridge arms of which include varistors. The passivation layer covers the second surface of the substrate. The base plate covers the groove to form a sealed cavity. The first force-applying element is at least partially disposed on the side of the passivation layer away from the substrate. The second force-applying element is at least partially disposed on the inner surface of the bottom wall of the groove. The conductive contacts are disposed on the substrate and / or the base plate and are electrically connected to the first and second force-applying elements, respectively. The conductive contacts are used to connect a control circuit, enabling the control circuit to independently control the first and second force-applying elements. Both the first and second force-applying elements are configured to apply a force close to or away from the base plate to the bottom wall of the groove when energized.

[0070] By applying voltage to the first force-applying element and / or the second force-applying element, the substrate can always be kept in a flat initial state. This prevents the linearity from deteriorating due to the increased deflection of the strain film in the substrate when the external pressure is large. Therefore, it effectively improves the problem that the deformation of the substrate does not change in an ideal linear manner with the pressure, thereby improving the detection accuracy of the MEMS sensor in this embodiment.

[0071] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0072] Please refer to Figures 1-3 , Figure 1 Top view of a MEMS sensor provided for some embodiments of this application; Figure 2 For this application Figure 1 The top view without the first force-applying element and passivation layer is shown. Figure 3 for Figure 1 A schematic diagram of the cross section along line III-III.

[0073] The MEMS sensor 100 provided in this application embodiment includes a substrate 10, a base plate 20, a passivation layer 30, a first force-applying element 40, a second force-applying element 50, and a conductive contact 60.

[0074] In one embodiment, the substrate 10 can be made of silicon-based materials, such as a single-crystal silicon wafer. Single-crystal silicon wafers are a common substrate for semiconductor devices, on which metal layers can be deposited and metal ions doped to construct semiconductor devices. The substrate 10 can be an N-type single-crystal silicon wafer, or, in other embodiments, a P-type single-crystal silicon wafer. In another embodiment, the MEMS sensor 100 needs to have a rollable characteristic. In this case, polyacetamide / polyimide (PI), i.e., a PI thin film, can be used as the substrate 10, and a single-crystal silicon layer is deposited on it to fabricate the rollable MEMS sensor 100. This application describes an embodiment where the substrate 10 is a semiconductor substrate 10 as an example. Furthermore, in some embodiments, the thickness of the substrate 10 is 50–800 μm, for example, it can be 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, 750 μm or 800 μm, etc.

[0075] In some embodiments, the substrate 10 has a first surface 11 and a second surface 12 facing each other, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. The first surface 11 has a groove 13, and the cross-sectional shape of the groove 13 along the thickness direction of the substrate 10 is not limited, for example, it can be a square, rectangle, or trapezoid, etc., and this application does not impose specific limitations on it. This application uses a trapezoid as an example, with the shorter side of the trapezoid closer to the second surface 12 and the longer side farther away from the second surface 12, such as... Figure 3 As shown. The second surface 12 has a Wheatstone bridge circuit 14, the arms of which include varistors 140.

[0076] In some embodiments, see Figure 2 The Wheatstone bridge circuit 14 includes four sets of varistors 140. Each varistor 140 responds to a change in resistance in response to a pressure change applied to the substrate 10, thereby converting the pressure signal into an electrical signal. Each set of varistors 140 includes two parallel and spaced-apart sub-varistors 141. In one embodiment, the four sets of varistors 140 are arranged in the same direction, for example... Figure 2 In the X-direction, four sets of varistors 140 are located in the central region of the substrate 10, forming... Figure 2The rhombus shape shown is distributed at the four corners of the rhombus. In another embodiment, the four groups of varistors 140 are arranged in different directions; for example, two groups of varistors 140 are arranged according to... Figure 2 The four sets of varistors 140 are arranged in the X direction; the other two sets are arranged along the Y direction. Alternatively, in another embodiment, the four sets of varistors 140 are arranged in a rectangle (not shown), and the arrangement direction of the four sets of varistors 140 is the same.

[0077] In some embodiments, the Wheatstone bridge circuit 14 further includes four sets of conductive regions 142 for leading out electrical signals. In one embodiment, such as... Figure 2 As shown, four sets of varistors 140 are respectively arranged in the middle of the substrate 10, and four conductive regions 142 are respectively arranged around the four sets of varistors 140. Specifically, the four conductive regions 142 are respectively arranged at the four corners of the substrate 10. In another embodiment, four sets of varistors 140 are respectively arranged at the four corners of the substrate 10 (not shown), and four conductive regions 142 are arranged in the middle of the substrate 10.

[0078] Further, please see Figure 2 and Figure 3 In some embodiments, the Wheatstone bridge circuit 14 further includes heavily doped ohmic contact regions 143 formed between the sub-varistors 141. The heavily doped ohmic contact regions 143 correspond one-to-one with the varistors 140 and are used to electrically connect the sub-varistors 141 in the corresponding group of varistors 140. The heavily doped ohmic contact regions 143 are regions that exhibit conductive properties after being doped with metal ions. In some embodiments, the sub-varistors 141 and the heavily doped ohmic contact regions 143 may have different doping degrees, and the varistors 140 and the heavily doped ohmic contact regions 143 may be formed on the substrate 10.

[0079] Please see Figure 3 A dielectric layer 15 is also deposited on the substrate 10. Four sets of conductive regions 142 are formed on the dielectric layer 15. The dielectric layer 15 can serve as both a protective layer and an insulating layer. The dielectric layer 15 can be made of materials such as silicon dioxide or silicon nitride, wherein the thickness of the oxide layer is 0.01–1 μm, for example, 0.01 μm, 0.03 μm, 0.05 μm, 0.07 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0. The thickness of the nitriding layer can be 0.25μm, 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm, or 1μm, etc., and the thickness of the nitriding layer can be 0.03 to 3μm, for example, 0.03μm, 0.05μm, 0.07μm, 1μm, 1.2μm, 1.5μm, 1.7μm, 2μm, 2.2μm, 2.5μm, 2.7μm, or 3μm, etc.

[0080] The dielectric layer 15 may have conductive lead holes 150. The Wheatstone bridge circuit 14 also includes conductive leads 144. The conductive region 142 and the conductive lead 144 can be electrically connected to the heavily doped ohmic contact region 143 in the conductive lead hole 150 on the dielectric layer 15, and then electrically connected to the varistor 140. Optionally, the conductive lead 144 is made of at least one of copper, nickel-chromium alloy, iron or platinum. The conductive region 142 can be a metal pad, and the material of the conductive region 142 can be the same as that of the conductive lead 144.

[0081] Please see Figure 3 In some embodiments, the substrate 20 can be a glass substrate or a ceramic substrate, etc. The substrate 20 can cover the groove 13 and form a sealed cavity with the substrate 10, that is... Figure 3 The indicated groove 13 is a sealed cavity. The bottom wall of the sealed cavity, projected along the second direction onto the area of ​​the substrate 10, together form a strain membrane 101. In some embodiments, the strain membrane 101 includes at least a portion of the substrate 10, a portion of the dielectric layer 15, and a portion of the passivation layer 30.

[0082] In some embodiments, the substrate 20 can be bonded to the substrate 10 to form a sealed cavity. Exemplarily, in some embodiments, the substrate 20 and the substrate 10 can be bonded together using metallic chromium under preset temperature and / or preset pressure conditions. The specific preset temperature and pressure need to be determined based on the bonding material and the actual equipment used, and will not be specifically described here. Those skilled in the art can understand the concept of this embodiment based on the above description. In other embodiments, the substrate 20 can be directly bonded to the substrate 10. Further, in some embodiments, a first sealing ring (not shown) is provided on the first surface 11 of the substrate 10, and a second sealing ring (not shown) is provided on the surface of the substrate 20 near the substrate 10. The first and second sealing rings are disposed opposite to each other, thereby bonding the substrate 10 and the substrate 20 to form a sealed cavity.

[0083] The passivation layer 30 can cover the second surface 12 of the substrate 10. The passivation layer 30 has a dense surface, which can be used to resist moisture erosion and device oxidation. Optionally, in some embodiments, the passivation layer 30 covers the side of the dielectric layer 15 away from the substrate 10, and the four sets of conductive regions 142 are at least partially exposed on the passivation layer 30. Further, in some embodiments, the passivation layer 30 covers the surfaces of the dielectric layer 15 and the conductive leads 144. The passivation layer 30 has cutout areas corresponding to the conductive regions 142, exposing the conductive regions 142 to the external environment so that electrical signals can be led out through the conductive leads 144.

[0084] Optionally, in some embodiments, the passivation layer 30 may include an oxide layer and a nitride layer, wherein the thickness of the oxide layer is 0.01 to 1 μm, for example, it may be 0.01 μm, 0.03 μm, 0.05 μm, 0.07 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm, etc., and the thickness of the nitride layer is 0.03 to 3 μm, for example, it may be 0.03 μm, 0.05 μm, 0.07 μm, 1 μm, 1.2 μm, 1.5 μm, 1.7 μm, 2 μm, 2.2 μm, 2.5 μm, 2.7 μm or 3 μm, etc.

[0085] Please continue reading Figure 3 In some embodiments, at least a portion of the first force-applying element 40 is disposed on the side of the passivation layer 30 away from the substrate 10; at least a portion of the second force-applying element 50 is disposed on the inner surface of the bottom wall of the groove 13. Further, both the first force-applying element 40 and the second force-applying element 50 are configured to apply a force close to or away from the substrate 20 to the bottom wall of the groove 13 when energized, to resist deformation (or "displacement") of the substrate 10 caused by airflow disturbance during use of the MEMS sensor 100. In embodiments of this application, the first force-applying element 40 and the second force-applying element 50 can respectively apply a force to the bottom wall of the groove 13 under the control of a control circuit.

[0086] Optionally, in some embodiments, the first force-applying element 40 includes a first upper electrode plate 41 and a first lower electrode plate 42, wherein the first lower electrode plate 42 is disposed on the surface of the passivation layer 30 away from the substrate 10, and the first upper electrode plate 41 is disposed at a distance from the side of the first lower electrode plate 42 away from the substrate 10. In one embodiment, please refer to... Figure 1 The first upper electrode 41 has a release hole 410, which is used to release the sacrificial layer 70 during the fabrication of the MEMS sensor 100. The first upper electrode 41 and the first lower electrode 42 are configured to repel or attract each other when energized, based on the principle of like charges repelling and unlike charges attracting, such as... Figure 3 As shown, when opposite poles attract, one of the first upper plate 41 and the first lower plate 42 is a positive plate and the other is a negative plate; when like poles repel, both the first upper plate 41 and the first lower plate 42 are either positive plates or both are negative plates; or, according to the principle of magnetic repulsion and attraction, such as... Figure 4 As shown.

[0087] Please continue reading Figure 3In some embodiments, the first force-applying element 40 is a parallel-plate capacitor. In one embodiment, the edge portion of the first upper electrode plate 41 can be disposed on the surface of the passivation layer 30 away from the substrate 10, while the middle portion is suspended on the side of the first lower electrode plate 42 away from the substrate 10. The first upper electrode plate 41, the first lower electrode plate 42, and the passivation layer 30 can form a cavity, and both the first upper electrode plate 41 and the first lower electrode plate 42 are electrode plates. Preferably, the projection of the middle suspended portion of the first upper electrode plate 41 onto the substrate 10 covers the bottom wall of the groove 13 and the first lower electrode plate 42; through the interaction between the middle suspended portion of the first upper electrode plate 41 and the first lower electrode plate 42, a force is applied to the bottom wall of the groove 13.

[0088] When the first upper electrode plate 41 and the first lower electrode plate 42 are supplied with the same charge, according to the principle of like charges repelling each other, they will move away from each other. In some embodiments of this application, after the first upper electrode plate 41 and the first lower electrode plate 42 are energized, the first lower electrode plate 42 will move towards the substrate 20, thereby causing the bottom wall of the groove 13 to move towards the substrate 20. Figure 3 In the middle, the direction closest to the substrate 20 can refer to the vertically downward direction, defined as the first direction (i.e. Figure 3 (in the opposite direction of the Z direction); when opposite charges are applied to the first upper electrode plate 41 and the first lower electrode plate 42, according to the principle of attraction between opposite charges, they move closer to each other. In some embodiments of this application, after the first upper electrode plate 41 and the first lower electrode plate 42 are energized, the first lower electrode plate 42 moves away from the substrate 20, thereby causing the bottom wall of the groove 13 to move away from the substrate 20. Figure 3 In this context, the direction away from the substrate 20 can refer to the vertically upward direction, and is defined as the second direction (i.e., Figure 3 (Z-direction), which will be used as an example in subsequent embodiments.

[0089] In some embodiments, the first upper electrode 41 can be made of materials such as platinum, nickel, or tungsten, which are suitable as thermocouples and capacitor plates. Among these, platinum is a good thermistor, and its resistance changes linearly with temperature. The first lower electrode 42 can also be made of materials such as gold, platinum, nickel, copper, tin oxide, or manganese oxide, which are suitable as capacitor plates.

[0090] Furthermore, in some embodiments, the conductive contact 60 includes a first conductive contact 61 electrically connected to the first upper electrode plate 41, and a second conductive contact 62 electrically connected to the first lower electrode plate 42. In some embodiments, the material of the first conductive contact 61 is the same as that of the first upper electrode plate 41, and the material of the second conductive contact 62 is the same as that of the first lower electrode plate 42. This can reduce contact resistance, reduce heat generation, and improve energy utilization. Optionally, in other embodiments, the material of the first conductive contact 61 may be different from that of the first upper electrode plate 41, and the material of the second conductive contact 62 may also be different from that of the first lower electrode plate 42. The number and position of the first conductive contact 61 and the second conductive contact 62 are not limited. The number can be the same or different, and can be one, two, three, or four, etc. They can be simultaneously disposed on the substrate 10, simultaneously disposed on the substrate 20, or partially disposed on the substrate 10 with the remainder disposed on the substrate 20. They can also be disposed on the passivation layer 30 and the dielectric layer 15, depending on the specific design requirements. Correspondingly, the substrate 10 has a first conductive hole 17 and a second conductive hole 18 spaced apart. The first conductive hole 17 can be deposited with the same material as the first upper electrode plate 41 to form the first conductive contact 61, and the second conductive hole 18 can be deposited with the same material as the first lower electrode plate 42 to form the second conductive contact 62.

[0091] Similarly, please continue to see Figure 3 In some embodiments, the second force-applying element 50 is also a parallel-plate capacitor. Specifically, the second force-applying element 50 includes a second upper electrode plate 51 and a second lower electrode plate 52. The second lower electrode plate 52 is disposed on the surface of the substrate 20 exposed to the sealed cavity, that is, on the surface of the substrate 20 near the substrate 10. The second upper electrode plate 51 is disposed on the bottom surface of the groove 13. Both the second upper electrode plate 51 and the second lower electrode plate 52 are electrode plates of a parallel-plate capacitor. The second upper electrode plate 51 and the second lower electrode plate 52 are configured to repel or attract each other when energized. This can be based on the principle of like charges repelling and unlike charges attracting. When unlike charges attract, one of the second upper electrode plate 51 and the second lower electrode plate 52 is a positive electrode plate and the other is a negative electrode plate. When like charges repel, both the second upper electrode plate 51 and the second lower electrode plate 52 are positive electrodes plates or both are negative electrodes plates.

[0092] The conductive contact 60 also includes a third conductive contact 63 electrically connected to the second upper electrode plate 51, and a fourth conductive contact 64 electrically connected to the second lower electrode plate 52. The material of the second upper electrode plate 51 can be similar to that of the first upper electrode plate 41, and the material of the second lower electrode plate 52 can be similar to that of the first lower electrode plate 42. For details, please refer to the description of the first upper electrode plate 41 and the first lower electrode plate 42 in the previous embodiments, which will not be repeated here. Accordingly, the substrate 20 has a third conductive hole 23 and a fourth conductive hole 24 spaced apart. The third conductive hole 23 can be deposited with the same material as the second upper electrode plate 51 and the first lead 510 to form the third conductive contact 63, and the fourth conductive hole 24 can be deposited with the same material as the second lower electrode plate 52 to form the fourth conductive contact 64.

[0093] Please see also Figure 4 and Figure 5 In other embodiments, one of the first upper plate 41 and the first lower plate 42 includes a permanent magnet material, and the other is an electromagnet. The conductive contact 60 is electrically connected to the electromagnet to change its polarity. Specifically, the polarity of the permanent magnet material is fixed. In this embodiment, the polarity of the permanent magnet material near the electromagnet is described as N-pole. The magnetism of the electromagnet near the permanent magnet material can be determined by Ampere's rule. Therefore, the polarity of the electromagnet can be changed by changing the direction of the current in the electromagnet. When the magnetism of the electromagnet near the permanent magnet material is N-pole, the first upper plate 41 and the first lower plate 42 repel each other. When the magnetism of the electromagnet near the permanent magnet material is S-pole, the first upper plate 41 and the first lower plate 42 attract each other. Conversely, when the permanent magnet material near the electromagnet is S-pole, the first upper plate 41 and the first lower plate 42 attract each other when the magnetism of the electromagnet near the permanent magnet material is N-pole, and repel each other when the magnetism of the electromagnet near the permanent magnet material is S-pole.

[0094] Please see Figure 4 In one embodiment, the first upper electrode plate 41 is a permanent magnet material, the first lower electrode plate 42 is an electromagnet, and the conductive contact 60 includes two spaced-apart second conductive contacts 62. One second conductive contact 62 is electrically connected to one end of the first lower electrode plate 42, and the other second conductive contact 62 is electrically connected to the other end of the first lower electrode plate 42, for applying a DC voltage to the first lower electrode plate 42 to change its polarity. Correspondingly, the substrate 10 has two spaced-apart second conductive holes 18, and the same material as the first lower electrode plate 42 is deposited in the two second conductive holes 18 to form two second conductive contacts 62.

[0095] Similarly, please continue to see Figure 4In some embodiments, the second upper electrode 51 is a permanent magnet material, the second lower electrode 52 is an electromagnet, and the conductive contact 60 further includes two spaced-apart fourth conductive contacts 64. One fourth conductive contact 64 is electrically connected to one end of the second lower electrode 52, and the other fourth conductive contact 64 is electrically connected to the other end of the second lower electrode 52, for applying a DC voltage to the second lower electrode 52 to change its polarity. Correspondingly, the substrate 20 has two spaced-apart fourth conductive holes 24, and the same material as the second lower electrode 52 is deposited in the two fourth conductive holes 24 to form two fourth conductive contacts 64. In this embodiment, by setting the second lower electrode 52 on the substrate 20 as an electromagnet and the second upper electrode 51 as a permanent magnet material, it is not necessary to arrange the first lead 510 on the second upper electrode 51, resulting in a simple structure and easy fabrication.

[0096] Please see Figure 5 In another embodiment, the first upper electrode plate 41 is an electromagnet, the first lower electrode plate 42 is a permanent magnet, and the conductive contact 60 includes two spaced-apart first conductive contacts 61. One first conductive contact 61 is electrically connected to one end of the first upper electrode plate 41, and the other first conductive contact 61 is electrically connected to the other end of the first upper electrode plate 41, for applying a DC voltage to the first upper electrode plate 41 to change its polarity. Correspondingly, the substrate 10 has two spaced-apart first conductive holes 17, and the same material as the first upper electrode plate 41 is deposited in the two first conductive holes 17 to form two first conductive contacts 61.

[0097] Similarly, please continue to see Figure 5 In some embodiments, the second upper electrode plate 51 is an electromagnet, the second lower electrode plate 52 is a permanent magnet, and the conductive contact 60 includes two spaced-apart third conductive contacts 63. One third conductive contact 63 can be electrically connected to one end of the second upper electrode plate 51 via a first lead 510, and the other third conductive contact 63 can be electrically connected to the other end of the second upper electrode plate 51 via another first lead 510, for applying a DC voltage to the second upper electrode plate 51 to change its polarity. Correspondingly, the substrate 20 has two spaced-apart third conductive holes 23, which are used to lead out the first leads 510 respectively.

[0098] Optionally, please see Figure 6In another embodiment, both the first upper electrode plate 41 and the first lower electrode plate 42 are electromagnets. Conductive contacts 60 are electrically connected to the first upper electrode plate 41 and the first lower electrode plate 42 respectively, for changing the polarity of the electromagnets. The conductive contacts 60 include two spaced-apart first conductive contacts 61 and two spaced-apart second conductive contacts 62. One first conductive contact 61 can be electrically connected to one end of the first upper electrode plate 41 through one first conductive hole 17 in the substrate 10, and the other first conductive contact 61 can be electrically connected to the other end of the first upper electrode plate 41 through another first conductive hole 17, for applying a DC voltage to the first upper electrode plate 41 to change its polarity. Similarly, one second conductive contact 62 can be electrically connected to one end of the first lower electrode plate 42 through one second conductive hole 18, and the other second conductive contact 62 can be electrically connected to the other end of the first lower electrode plate 42 through another second conductive hole 18, for applying a DC voltage to the first lower electrode plate 42 to change its polarity.

[0099] Similarly, both the second upper electrode plate 51 and the second lower electrode plate 52 are electromagnets. The conductive contacts 60 are electrically connected to the second upper electrode plate 51 and the second lower electrode plate 52 respectively, for changing the polarity of the electromagnets. The conductive contacts 60 also include two spaced-apart third conductive contacts 63 and two spaced-apart fourth conductive contacts 64. One of the third conductive contacts 63 can be electrically connected to one end of the second upper electrode plate 51 through a third conductive hole 23 on the substrate 20 and a first lead 510 inside it. The other third conductive contact 63 can be electrically connected to the other end of the second upper electrode plate 51 through another third conductive hole 23 on the substrate 20 and another first lead 510 inside it, for passing a DC voltage to the second upper electrode plate 51 to change its polarity. One of the fourth conductive contacts 64 is electrically connected to one end of the second lower electrode plate 52 through a fourth conductive hole 24 on the substrate 20, and the other fourth conductive contact 64 is electrically connected to the other end of the second lower electrode plate 52 through another fourth conductive hole 24 on the substrate 20, for passing DC voltage to the second lower electrode plate 52 to change its polarity.

[0100] It is understood that the structure, material, and underlying principle of the second force-applying element 50 are similar to those of the first force-applying element 40, and will not be repeated here. In addition, the first force-applying element 40 and the second force-applying element 50 may be based on the same principle, that is, they may both be parallel plate capacitors, or structures based on the principle of magnetic laws. The first force-applying element 40 and the second force-applying element 50 may be based on the same or different principles. For example, in some embodiments, the first force-applying element 40 may be a parallel plate capacitor based on the principle of opposite charges attracting and like charges repelling, and the second force-applying element 50 may be based on the principle of magnetic laws, and vice versa.

[0101] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of this application is described below:

[0102] When the strain membrane 101 is subjected to stress along the first direction ( Figure 3 When pressure is applied in the opposite direction of the Z-direction (i.e., vertically downward), the strain membrane 101 also displaces along the first direction. At this time, a DC voltage can be applied between the first upper plate 41 and the first lower plate 42, so that the charge on the first upper plate 41 is opposite to the charge on the first lower plate 42. Under the action of electrostatic force, the first upper plate 41 and the first lower plate 42 move closer to each other, and the strain membrane 101 on the substrate 10 displaces along the second direction (i.e., vertically downward). Figure 3 The displacement in the Z-direction (i.e., the vertically upward direction); and / or, the application of a potential of the same charge between the second upper plate 51 and the second lower plate 52, under the action of electrostatic force, the second upper plate 51 and the second lower plate 52 repel each other, and the strain membrane 101 on the substrate 10 undergoes displacement in the second direction, thereby compensating for the deflection of the strain membrane 101, that is, reducing the deflection of the strain membrane 101 and reducing the influence of the deflection of the strain membrane 101 on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be the initial value, for example, zero, that is, when the pressure on the strain membrane 101 in the first direction cancels out the deformation force after energization, the strain membrane 101 is restored to its initial flat state. The magnitude of the pressure in the second direction applied by the first force-applying element 40 and / or the second force-applying element 50 can be calculated according to the magnitude of the input voltage, thereby obtaining the magnitude of the external pressure in the first direction applied to the strain membrane 101.

[0103] Optionally, when the strained membrane 101 is subjected to stress along the second direction ( Figure 3When pressure is applied in the Z direction (vertically upward), the strain membrane 101 also displaces along the second direction. At this time, a DC voltage can be applied between the first upper plate 41 and the first lower plate 42, so that the charge on the first upper plate 41 is the same as the charge on the first lower plate 42. Under the action of electrostatic force, the first upper plate 41 and the first lower plate 42 repel each other, and the strain membrane 101 on the substrate 10 displaces along the first direction. And / or, a DC voltage can be applied between the second upper plate 51 and the second lower plate 52, so that the charge on the first upper plate 41 is opposite to the charge on the first lower plate 42. Under the action of electrostatic force, the second upper plate 51 and the second lower plate 52 attract each other, and the strain membrane 101 on the substrate 10 displaces along the first direction, thereby compensating for the deflection of the strain membrane 101, that is, reducing the deflection of the strain membrane 101, and reducing the influence of the deflection of the strain membrane 101 on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be the initial value, such as zero, that is, when the pressure on the strain membrane 101 in the first direction cancels out the deformation force after energization, the strain membrane 101 is restored to its initial flat state. The magnitude of the pressure applied in the first direction by the first force-applying element 40 and / or the second force-applying element 50 can be calculated based on the magnitude of the input voltage, thereby obtaining the magnitude of the external pressure applied to the strain membrane 101 in the second direction.

[0104] Optionally, please see Figure 7 In other embodiments, the first force-applying element 40 and / or the second force-applying element 50 include a deformable material layer that can deform along a specific direction after being energized. The deformable material layer includes a thermo-deformable material layer or an electro-deformable material layer, wherein the thermo-deformable material layer refers to a material layer that deforms after being heated. In some embodiments of this application, the thermo-deformable material layer can generate heat and deform after being energized. The material of the thermo-deformable material layer can be a metal such as platinum, nickel, tungsten, etc., or an electrothermal braking material (e.g., a polymer carbon nanotube composite material, a carbon nanotube layer and vanadium dioxide layer composite material), or an electro-expanding ceramic (Lead Zirconate Titanate / Piezoelectric ceramic material, PZT, [Pb(Zr)]). ·TiO3), or shape memory alloys (SMA), etc. Electrodeformable material layers refer to a material layer that can deform under the action of an applied electric or magnetic field. Its material can include electrostrictive piezoelectric deformation materials, such as electrostrictive piezoelectric deformation materials (EDM) or electroactive piezoelectric composites (EAPC or EMS), etc., or electromagnetically deformable materials, such as electromagnetic controllable insulators (EMIR), electromagnetic controllable ferrites (EMM), or electromagnetically controllable composite materials (EMC), etc.

[0105] Optionally, in some embodiments, the thermo-deformable material layer or the electro-deformable material layer may be conductive and electrically connected to the conductive contact 60. By making the thermo-deformable material layer or the electro-deformable material layer conductive, the thermo-deformable material layer or the electro-deformable material layer can be directly electrically connected to the conductive contact 60 without the need to set conductive elements on the thermo-deformable material layer or the electro-deformable material layer. Therefore, the MEMS sensor 100 of this application has a simple structure and is easy to fabricate.

[0106] Optionally, please also see Figure 8 and Figure 9 In some embodiments, the first force-applying element 40 includes a first deformable material layer 43 disposed on the surface of the passivation layer 30 away from the substrate 10. The first deformable material layer 43 includes a first thermotropic deformable material layer 430 and a first conductive heating layer 431; the first conductive heating layer 431 is electrically connected to the second conductive contact 62 in the conductive contact 60. The material of the first conductive heating layer 431 can be metal, carbon material, or polymer composite material; this application does not impose specific limitations on this. In the embodiments of this application, the first conductive heating layer 431 heats up after being energized through the second conductive contact 62 in the conductive contact 60, and then transfers the heat to the first thermotropic deformable material layer 430 to heat it up. With this design, the first thermotropic deformable material layer 430 can be an insulating material or a conductive material, allowing for a wider range of choices. Optionally, the aforementioned first thermotropic deformable material layer 430 can be replaced with a first electrotropic deformable material layer.

[0107] In some embodiments, please continue to see Figure 8 The first conductive heating layer 431 and the first thermo-deformable material layer 430 are stacked together. The first conductive heating layer 431 can transfer heat from the contact surface to the first thermo-deformable material layer 430; the larger the contact surface, the faster the heat transfer. For other embodiments, please refer to... Figure 9 and Figure 10 The first conductive heating layer 431 surrounds the first thermo-deformable material layer 430. The heat of the first conductive heating layer 431 can be transferred from the periphery of the first thermo-deformable material layer 430 to the center. This heat transfer method can make the heat transfer more uniform.

[0108] Please see also Figure 11 The first deformable material layer 43 includes a plurality of first sub-deformable material layers 432 and a plurality of second sub-deformable material layers 433 spaced apart; the plurality of first sub-deformable material layers 432 and the plurality of second sub-deformable material layers 433 are alternately arranged along the Y direction; the first sub-deformable material layers 432 and the second sub-deformable material layers 433 exert opposite forces on the bottom wall of the groove 13 when energized, and are independently controlled by two different pairs of first conductive contacts 61 and second conductive contacts 62.

[0109] Please continue reading Figure 7 In some embodiments, the second force-applying element 50 includes a second deformable material layer 53 disposed on the bottom surface of the groove 13. The second deformable material layer 53 is configured to deform under energization, thereby applying a force toward or away from the substrate 20 to the bottom wall of the groove 13. The structure and material of the second deformable material layer 53 are substantially the same as those of the first deformable material layer 43. Please refer to [further details omitted]. Figure 8 and Figure 9 The second deformable material layer 53 includes a second thermo-deformable material layer 530 and a second conductive heating layer 531; the second conductive heating layer 531 is electrically connected to the third conductive contact 63 in the conductive contact 60. The material of the second conductive heating layer 531 can be metal, carbon material, or polymer composite material; this application does not impose specific limitations on this. In this embodiment, the second conductive heating layer 531 heats up after being energized through the third conductive contact 63, and then transfers the heat to the second thermo-deformable material layer 530, causing it to heat up as well. Thus, the second thermo-deformable material layer 530 can be an insulating material or a conductive material, allowing for a wider range of choices. Optionally, the aforementioned second thermo-deformable material layer 530 can be replaced with a second electro-deformable material layer.

[0110] Similarly, the second thermodeformable material layer 530 and the second conductive heating layer 531 can be stacked, such as... Figure 8 As shown, or, the second conductive heating layer 531 surrounds the second thermally deformable material layer 530, such as Figure 9 As shown.

[0111] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of this application is described below:

[0112] When the strain membrane 101 is subjected to stress along the first direction ( Figure 3 When pressure is applied in the opposite direction of the Z-direction (i.e., vertically downward), the strain membrane 101 also displaces along the first direction. At this time, a DC voltage can be applied to both ends of the second force-applying element 50, causing the second force-applying element 50 (the second thermo-deformable material layer 530) to cause the strain membrane 101 to displace along the second direction due to the heating effect of the current. Figures 8-11 In the structure shown); or a DC voltage is applied to both ends of the second force-applying element 50, causing the second force-applying element 50 (the second electrodeformable material layer, not shown, but could also be 530) to stretch in a third direction perpendicular to the first direction due to the energization (in Figures 8-11 In the structure shown, the second force-applying element 50 is suspended in the area corresponding to the sealed cavity. Therefore, when the second force-applying element 50 is horizontally stretched, it will generate a force along the second direction in the suspended area in the middle, causing the strain membrane 101 to displace along the second direction. By causing the strain membrane 101 to displace along the second direction through the second force-applying element 50, the deflection of the strain membrane 101 is compensated, thereby reducing the deflection of the strain membrane 101 and reducing the influence of the deflection of the strain membrane 101 on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, that is, the pressure in the first direction on the strain membrane 101 cancels out the deformation force after energization, the magnitude of the pressure along the second direction applied by the second force-applying element 50 can be calculated according to the magnitude of the input voltage, thereby obtaining the magnitude of the external pressure along the first direction applied to the strain membrane 101.

[0113] Optionally, when the strained membrane 101 is subjected to stress along the second direction ( Figure 3When pressure is applied in the Z-direction (vertically upward), the strain membrane 101 also displaces along the second direction. At this time, a DC voltage can be applied to both ends of the first force-applying element 40, causing the strain membrane 101 to displace along the first direction due to the heating effect of the first force-applying element 40 (first thermo-deformable material layer 430); or the first force-applying element 40 (first electro-deformable material layer, not shown, but could also be 430) will stretch in a third direction perpendicular to the first direction due to the energization. Since the first force-applying element 40 is suspended in the corresponding area of ​​the sealed cavity, when it stretches horizontally, a force along the first direction will be generated in the suspended area in the middle, causing the strain membrane 101 to displace along the first direction. By causing the strain membrane 101 to displace along the first direction through the first force-applying element 40, the deflection of the strain membrane 101 is compensated, thus reducing the deflection of the strain membrane 101 and minimizing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be zero, that is, the pressure in the second direction on the strain membrane 101 cancels out the deformation force after energization, thereby allowing the strain membrane 101 to return to its initial flat state. The magnitude of the pressure in the first direction applied by the first force-applying element 40 can be calculated based on the magnitude of the input voltage, thereby obtaining the magnitude of the external pressure applied to the strain membrane 101 in the second direction.

[0114] Understandably, in other embodiments of this application, the strain membrane 101 can also be displaced along the first direction by the second force-applying element 50, and displaced along the second direction by the first force-applying element 40. This is related to the arrangement orientation of the first electro-deformable material layer, the second electro-deformable material layer, the first thermo-deformable material layer 430, and the second thermo-deformable material layer 530. In the embodiments of this application, the first force-applying element 40 and the second force-applying element 50 can be a combination of a deformable material layer and a parallel plate capacitor, or both can be deformable material layers, or both can be parallel plate capacitors, or one can be a deformable material layer and the other can be a parallel plate capacitor.

[0115] Exemplarily, in one embodiment, such as Figure 7 As shown, the first force-applying element 40 includes a first deformable material layer 43 disposed on the surface of the passivation layer 30 away from the substrate 10, and the second force-applying element 50 includes a second deformable material layer 53 disposed on the bottom surface of the groove 13. Both the first deformable material layer 43 and the second deformable material layer 53 are configured to deform under energized conditions, thereby applying a force to the bottom wall of the groove 13 that is close to or away from the substrate 20.

[0116] Optionally, in another embodiment, the first force-applying element 40 includes the parallel plate capacitor of the aforementioned embodiments, or includes the permanent magnet material and magnet of the aforementioned embodiments, which will not be described in detail here. The second force-applying element 50 includes a second deformable material layer 53 disposed on the bottom surface of the groove 13. The second deformable material layer 53 is configured to deform under energization, thereby applying a force to the bottom wall of the groove 13 toward or away from the substrate 20.

[0117] Optionally, in another embodiment, both the first force-applying element 40 and the second force-applying element 50 include a deformable material layer. Specifically, the first force-applying element 40 includes a first deformable material layer 43 disposed on the surface of the passivation layer away from the substrate 10. The first deformable material layer 43 is configured to deform under energization, thereby applying a force to the bottom wall of the groove 13 toward or away from the substrate 20. The second force-applying element 50 includes a second lower electrode plate 52 disposed on the surface of the substrate 20 exposed to the sealing cavity, and a second upper electrode plate 51 disposed on the bottom surface of the groove 13. The second upper electrode plate 51 and the second lower electrode plate 52 are configured to repel or attract each other under energization.

[0118] Optionally, please see Figure 12 and Figure 13 In some embodiments, the first force-applying element 40 is a first deformable material layer 43, and the second force-applying element 50 includes a second upper electrode plate 51 and a second lower electrode plate 52. The second upper electrode plate 51 is the aforementioned second deformable material layer 53. One end of the second upper electrode plate 51 is electrically connected to a third conductive contact 63 through a first lead 510 and a third conductive hole 23. The other end of the second upper electrode plate 51 is electrically connected to another third conductive contact 63 through another first lead 510 and another third conductive hole 23. The second lower electrode plate 52 is electrically connected to a fourth conductive contact 64 through a fourth conductive hole 24.

[0119] Please see Figure 14 , Figure 14 This is a flowchart illustrating a method for fabricating a MEMS sensor 100 according to some embodiments of this application. The method for fabricating a MEMS sensor 100 according to some embodiments of this application includes:

[0120] S10: A substrate 10 is provided, and a Wheatstone bridge circuit 14 and a passivation layer 30 are formed on the second surface 12 of the substrate 10.

[0121] The substrate 10 has opposing first surfaces 11 and second surfaces 12. The substrate 10 is a semiconductor substrate, such as an SOI (Silicon On Insulator) wafer. Depending on the impurities and conductivity type of the silicon material, the substrate 10 can be an N-type or P-type single-crystal silicon wafer. See also... Figure 15Step S10 may include:

[0122] S11: Four sets of varistors 140 and heavily doped ohmic contact regions 143 are formed on the second surface 12 of the substrate 10;

[0123] Specifically, in some embodiments, a lightly doped varistor 140 and a heavily doped ohmic contact region 143 are fabricated by photolithography and two ion implantations on the second surface 12 of the substrate 10. The heavily doped ohmic contact region 143 is used to electrically connect the varistor 140 to the subsequently obtained conductive lead 144. (See also...) Figure 16 , Figure 16 This is a schematic diagram of the structure obtained after step S11.

[0124] S12: A dielectric layer 15 is formed on the second surface 12 of the substrate 10;

[0125] The dielectric layer 15 is made of an insulating material, such as one or both of an oxide layer and a nitride layer. In some embodiments, in step S12, plasma-enhanced chemical vapor deposition (PECVD) can be used to deposit an oxide layer with a thickness of 0.01–1 μm and a nitride layer with a thickness of 0.03–3 μm on the second surface 12 of the substrate 10 to form the dielectric layer 15. Please refer to [further details omitted]. Figure 17 , Figure 17 This is a schematic diagram of the structure obtained after step S12.

[0126] S13: Conductive leads 144 and conductive regions 142 are formed on the dielectric layer 15;

[0127] In some embodiments, see Figure 18 Step S13 further includes:

[0128] S131: Photolithography is performed on the side of the dielectric layer 15 away from the heavily doped ohmic contact region 143 to form a conductive lead hole 150.

[0129] Please see also Figure 19 , Figure 19 This is a schematic diagram of the structure obtained in step S131.

[0130] S132: Metal sputtering and photolithography are performed at the conductive lead hole 150 to form a conductive lead 144 in the conductive lead hole 150, and a conductive region 142 connected to the conductive lead 144 is formed on the surface of the dielectric layer 15.

[0131] The conductive region 142 may include metal pads. During metal sputtering at the conductive lead 144, a first metal layer is formed on the second surface 12 of the substrate 10, and photolithography is performed on the first metal layer to form the conductive lead 144 and the conductive region 142. The thickness of the first metal layer can be 0.1–4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm, or 4 μm, etc. This application does not impose any limitations; specifically, it can be selected as needed. Please refer to [further details omitted]. Figure 20 and Figure 21 , Figure 20 This is a schematic diagram of the structure obtained after step S132; Figure 21 for Figure 20 Top view.

[0132] S14: A passivation layer 30 is formed on the dielectric layer 15, wherein the passivation layer 30 is cut out at the position corresponding to the conductive region 142 so that the conductive region 142 is exposed.

[0133] In some embodiments, an oxide layer with a thickness of 0.01–1 μm and a nitride layer with a thickness of 0.03–3 μm are deposited on the surface of the dielectric layer 15 away from the heavily doped ohmic contact region 143 to form a passivation layer 30. The deposition method can be PECVD. The passivation layer 30 in step S14 is cut out at the location corresponding to the conductive region 142 to expose the conductive region 142; this can also be implemented in step S60 below. Please refer to [further details omitted]. Figure 22 and Figure 23 , Figure 22 This is a schematic diagram of the structure obtained after step S14. Figure 23 for Figure 22 Top view.

[0134] S20: A first force-applying element 40 is formed on the side of the passivation layer 30 away from the substrate 10;

[0135] In some embodiments, such as Figure 3 As shown, the first force-applying element 40 may include a first upper electrode plate 41 and a first lower electrode plate 42. Accordingly, please refer to... Figure 24 Step S20 includes:

[0136] S21: A first lower electrode plate 42 is formed on the surface of the passivation layer 30 away from the substrate 10;

[0137] In this process, metal sputtering is performed on the surface of the passivation layer 30 away from the substrate 10 to obtain a second metal layer. The second metal layer is then photolithographically etched. The thickness of the second metal layer can be 0.1–4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm, or 4 μm, etc. This application does not impose any limitations; specifically, the thickness can be selected as needed. Please also refer to... Figure 25 , Figure 25 for Figure 24 A schematic diagram of the structure obtained after step S21.

[0138] S22: A sacrificial layer 70 is formed on the side of the passivation layer 30 away from the substrate 10;

[0139] In some embodiments, the sacrificial layer 70 can be made of polyimide or silicon phosphate glass (PSG), and is obtained by photolithography and etching of the deposited polyimide or silicon phosphate glass (PSG). Please also refer to... Figure 26 , Figure 26 for Figure 24 A schematic diagram of the structure obtained after step S22.

[0140] S23: Polysilicon is deposited on the sacrificial layer 70 and photolithography is performed to form the first upper electrode plate 41;

[0141] The first upper electrode plate 41 has a release hole for subsequently releasing the sacrificial layer 70 and the passivation layer 30. Please refer to [the document for further details]. Figure 27 , Figure 27 for Figure 24 A schematic diagram of the structure obtained after step S23.

[0142] S30: A groove 13 is formed on the first surface 11 of the substrate 10, and at least a portion of the second force-applying element 50 is disposed in the groove 13;

[0143] The method of forming the groove 13 is not limited; for example, the groove 13 can be formed by etching, solution corrosion, or mechanical cutting. See also some embodiments. Figure 3 The second force-applying element 50 includes a second upper electrode plate 51 and a second lower electrode plate 52. See also... Figure 28 Step S30 includes:

[0144] S31: A groove 13 is formed on the first surface 11 of the substrate 10;

[0145] The groove 13 can be formed using a bulk silicon etching process, which can be either physical or chemical etching. The cross-section of the groove 13 can be trapezoidal, with the shorter side of the trapezoid closer to the second surface 12 and the longer side farther away from the second surface 12. (Please refer to [reference needed]). Figure 29, Figure 29 for Figure 28 A schematic diagram of the structure obtained after step S31.

[0146] S32: A second upper electrode plate 51 is formed on the bottom wall of the groove 13;

[0147] Specifically, during the process of forming the second upper electrode 51, a lead (e.g., a first lead 510) can also be formed simultaneously on the first surface 11 of the substrate 10. In some embodiments, S32 further includes: performing metal sputtering on the inner side of the groove 13 to obtain a third metal layer, and performing photolithography on the third metal layer to form the second upper electrode 51 and the first lead 510, wherein the second upper electrode 51 is located on the bottom surface of the groove 13, and the first lead 510 is located on the side surface of the groove 13.

[0148] The thickness of the third metal layer can be 0.1–4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm, or 4 μm, etc. This application does not impose any restrictions; specifically, it can be selected according to needs. Please also refer to... Figure 30 , Figure 30 for Figure 28 A schematic diagram of the structure obtained after step S32.

[0149] S40: Provide a substrate 20 and process the substrate 20;

[0150] The substrate 20 can be made of glass or ceramic. The method of processing the substrate 20 depends on the configuration of the fabricated MEMS sensor 100. Figure 3 The MEMS sensor 100 shown is used as an example for introduction. Please refer to [link / reference]. Figure 31 Step S40 further includes:

[0151] S41: A third conductive hole 23 and a fourth conductive hole 24 are formed on the substrate 20;

[0152] In some embodiments, the third conductive hole 23 and the fourth conductive hole 24 can be formed on the substrate 20 by burning or etching, wherein burning can be achieved by through-hole technology (TGV process). Please refer to [further details omitted]. Figure 32 , Figure 32 for Figure 31 A schematic diagram of the structure obtained after step S41.

[0153] S42: Metal filling and photolithography are performed on the third conductive hole 23 and the fourth conductive hole 24 to form the third conductive contact 63 and the fourth conductive contact 64;

[0154] Please see also Figure 33 , Figure 33 for Figure 31 A schematic diagram of the structure obtained after step S42.

[0155] S43: Metal sputtering and photolithography are performed on the side of substrate 20 near substrate 10 to form a second lower electrode plate 52.

[0156] Metal sputtering is performed on the side of substrate 20 near substrate 10 to obtain a fourth metal layer. Photolithography is then performed on the fourth metal layer to form the second lower electrode 52. The thickness of the fourth metal layer can be 0.1–4 μm, for example, 0.1 μm, 0.2 μm, 0.5 μm, 0.7 μm, 1 μm, 1.2 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3 μm, 2.5 μm, or 4 μm, etc. This application does not impose any limitations; specifically, it can be selected as needed. Please also refer to... Figure 34 , Figure 34 for Figure 31 A schematic diagram of the structure obtained after step S43.

[0157] Step S40 may further include cleaning the substrate 20 to make the substrate 20 bond more tightly to the substrate 10.

[0158] S50: The substrate 20 covers the groove 13 of the substrate 10 to form a sealed cavity, so that at least a portion of the second force-applying element 50 is located in the sealed cavity;

[0159] Please see also Figure 35 , Figure 35 for Figure 14 A schematic diagram of the structure obtained after step S50. In some embodiments, the substrate 20 and the substrate 10 can be bonded together so that the second lower electrode 52 and the second upper electrode 51 are disposed opposite each other, and at least a portion of the second force-applying element 50 is located within the sealed cavity. Optionally, in some embodiments, a first sealing ring can be provided on the outer periphery of the first surface 11 of the substrate 10, and a second sealing ring can be provided on the outer periphery of one side of the substrate 20, and the first sealing ring and the second sealing ring are aligned and bonded. In the fabrication process... Figure 2 In the MEMS sensor 100 shown, the side of the substrate 10 with the groove 13 is bonded to the side of the substrate 20 where the second lower electrode plate 52 is formed to form a sealed cavity. The sealed cavity is a space enclosed between the second upper electrode plate 51, the second lower electrode plate 52 and the substrate 20. The second lower electrode plate 52 and the second upper electrode plate 51 are arranged opposite to each other in the sealed cavity.

[0160] Optionally, in the preparation of such Figure 3 When using the MEMS sensor 100 shown, the method further includes:

[0161] S60: Release the sacrificial layer 70 through the release hole 410 on the first upper electrode plate 41 to obtain the MEMS sensor 100.

[0162] The method of releasing the sacrificial layer 70 is not limited, and can be achieved through chemical etching, laser ablation, or mechanical stripping. After releasing the sacrificial layer 70, the passivation layer 30 above the conductive region 142 can be removed by photolithography, so that the first upper electrode plate 41 and the conductive region 142 are exposed in the sealed cavity, wherein the sealed cavity is the space enclosed between the first upper electrode plate 41, the first lower electrode plate 42, and the passivation layer 30.

[0163] The MEMS sensor 100 provided in the above embodiments of this application realizes the testing of external pressure by compensating for the pressure inside and outside the cavity. The strain membrane 101 has a small deformation and higher linearity. The pressure test can be visualized by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, which has higher sensitivity.

[0164] It should be noted that the position, material, size, function, etc. of each layer structure involved in the fabrication method of the MEMS sensor 100 described above in this application can be the same as those in the embodiments of the MEMS sensor 100 described above in this application. For details, please refer to the above embodiments, which will not be repeated here.

[0165] The following describes an exemplary embodiment of the MEMS sensor 100 applied to an electronic atomization device.

[0166] Please see also Figure 36 and Figure 37 , Figure 36 Electronic atomizing devices provided in some embodiments of this application; Figure 37 for Figure 36 Functional module diagram of an electronic atomizing device.

[0167] The electronic atomizing device 1000 provided in this application embodiment includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomizing component 300; the control unit 1000B includes a MEMS sensor 100, a control circuit 400 and a power supply 500.

[0168] In some embodiments, the liquid storage component 200 is used to store the aerosol generating matrix. The aerosol generating matrix can be a solid matrix or liquid substance of plant leaves with specific aromas or substances, which can generate aerosols for users to inhale under heating without combustion. The electronic atomizing device 1000 of this application can be used in various fields, such as medical, cosmetic, or recreational inhalation. The liquid storage component 200 has an aerosol inlet end and an aerosol outlet end.

[0169] The atomizing component 300 is disposed in the airflow path from the inlet to the outlet and is used to atomize the aerosol generation matrix. The atomizing component 300 can generate aerosols in any way, such as by ultrasonic vibration or heating to atomize the aerosol generation matrix.

[0170] The MEMS sensor 100 is the MEMS sensor 100 provided in any of the above embodiments. The MEMS sensor 100 is disposed on the airflow channel of the electronic atomizing device 1000 and is used to detect changes in air pressure within the airflow channel. In this embodiment, the MEMS sensor 100 can serve as an airflow start switch. When a user inhales through the electronic atomizing device 1000, the MEMS sensor 100 can detect the user's inhalation action and output a control signal to the control circuit 400, thereby driving the control circuit to output voltage to the atomizing component 300.

[0171] The power supply 500 can be used to provide voltage to the atomizing assembly 300 and the MEMS sensor 100. The power supply 500 can be a rechargeable battery cell or a replaceable disposable battery cell, etc.

[0172] The control circuit 400 is electrically connected to the atomizing component 300, the MEMS sensor 100, and the power supply 500. The control circuit 400 is used to control the power supply 500 to apply an electrical signal to the first force-applying element 40 and / or the second force-applying element 50 according to the amount of change in the output voltage of the MEMS sensor 100 caused by the change in air pressure in the airflow channel. This causes the first force-applying element 40 and / or the second force-applying element 50 to apply a force close to or away from the substrate 20 to the bottom wall of the groove 13, so that the amount of change in the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold, thereby compensating for the drift of the resistance value of the pressure-sensitive resistor 140 and the pressure relationship caused by the pressure deformation of the substrate 10.

[0173] It is understood that changes in air pressure within the airflow channel will cause changes in the resistance of the pressure-sensitive resistor 140, thereby causing changes in the output voltage Vout of the MEMS sensor 100. The amount of change in the output voltage Vout of the MEMS sensor 100 reflects the magnitude of the air pressure within the airflow channel, i.e., the magnitude of the pressure experienced by the MEMS sensor 100. When the pressure experienced by the MEMS sensor 100 exceeds a certain value, i.e., when the change in the output voltage Vout of the MEMS sensor 100 exceeds a preset threshold, the substrate 10 undergoes compressive deformation, causing a shift in the relationship between the resistance of the pressure-sensitive resistor 140 and the pressure. By applying a force close to or away from the substrate 20 to the bottom wall of the groove 13 through the first force-applying element 40 and / or the second force-applying element 50, the shift in the relationship between the resistance of the pressure-sensitive resistor 140 caused by the compressive deformation of the substrate 10 is compensated when the change in the output voltage Vout of the MEMS sensor 100 is less than or equal to the preset threshold. The preset threshold is the change in output voltage Vout corresponding to the drift of the relationship between the resistance of the varistor 140 and the pressure caused by the pressure deformation of the substrate 10. This can be obtained in advance through experiments.

[0174] In some embodiments, the control circuit 400 is further configured to detect whether the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 cancels the deformation of the bottom wall of the groove 13 caused by air pressure, and when it is detected that the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 cancels the deformation of the bottom wall of the groove 13 caused by air pressure, determine the magnitude of the air pressure based on the electrical signal applied to the first force-applying element 40 and / or the second force-applying element 50.

[0175] Specifically, with the preset threshold set to 0, the control circuit 400 can detect whether the change in the output voltage of the MEMS sensor 100 is 0, and when the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, it determines the magnitude of the air pressure based on the electrical signal applied to the first force-applying element 40 and / or the second force-applying element 50. When the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, that is, the output voltage Vout of the MEMS sensor 100 returns to its initial value.

[0176] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 deforms due to air pressure, the control circuit 400 controls the power supply 500 to apply a voltage Vx to the first force-applying element 40 and / or the second force-applying element 50 to compensate for the deformation, so that the output voltage Vout of the MEMS sensor 100 after compensation returns to 0 (i.e., the change in output voltage Vout is 0). When the voltage Vx applied to the first force-applying element 40 and / or the second force-applying element 50 is not 0, it is determined that the force applied by the first force-applying element 40 and / or the second force-applying element 50 to the bottom wall of the groove 13 caused by the voltage Vx compensates and offsets the deformation of the bottom wall of the groove 13 caused by the air pressure in the airflow channel. Thus, the air pressure can be obtained based on the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V, or 4V, etc., and this application does not impose specific limitations. The embodiments of this application are described with an initial value of 0.

[0177] The working principle of the MEMS sensor 100 in this embodiment will be explained below in conjunction with the user's inhalation process of the electronic atomizing device 1000:

[0178] When the user begins to inhale, a negative pressure is generated within the electronic atomizing device 1000. At this time, the MEMS sensor 100 is subjected to a second direction (…). Figure 3 Under the pressure in the Z-direction (vertically upward), the bottom wall of the groove 13 deforms in the second direction. Since the Wheatstone bridge circuit 14 includes a varistor 140, the change in the resistance of the varistor 140 causes a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on the change in the output voltage Vout, the user's suction action can be detected. When the substrate 10 is displaced in the second direction, a voltage is applied to the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to apply a force close to the substrate 20 to the bottom wall of the groove 13, thereby causing the bottom wall of the groove 13 to displace in the first direction, thus counteracting the displacement in the second direction caused by the airflow fluctuation, thereby causing the output voltage Vout of the Wheatstone bridge circuit 14 to return to its initial value, for example, 0.

[0179] When the user inhales, in addition to generating negative pressure, positive pressure may also be generated in the electronic atomizing device 1000 due to airflow fluctuations. Therefore, in addition to displacement in the second direction, the bottom wall of the groove 13 may also be displaced in the first direction.

[0180] When the substrate 10 is subjected to pressure (blowing or airflow fluctuation) along the first direction, the first direction ( Figure 3The displacement in the opposite direction of the Z-direction (i.e., vertically downward) causes a change in the resistance of the varistor 140, resulting in a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on this change in output voltage Vout, a change in air pressure can be detected. Therefore, a voltage is applied to the two ends of the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to exert a force away from the substrate 20 on the bottom wall of the groove 13. This causes the bottom wall of the groove 13 to displace in the second direction, thereby counteracting the displacement in the first direction caused by the pressure in the first direction. When the displacement in the first direction and the displacement in the second direction are completely canceled out, the voltage output Vout value of the Wheatstone bridge circuit 14 returns to its initial value of 0.

[0181] Therefore, it can be seen that, depending on the setting position of the MEMS sensor 100 in this embodiment, it can sensitively detect pressure in any set first and second directions. Compared with the piezoresistive sensors of related technologies, it not only has higher accuracy but also a wider range of applications.

[0182] In this embodiment of the MEMS sensor 100, when the substrate 10 is subjected to gas pressure in a direction away from the substrate 20, a DC voltage can be applied to the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to exert a force close to the substrate 20 on the bottom wall of the groove 13. This force cancels out the gas pressure. When the substrate 10 is subjected to gas pressure close to the substrate 20, a DC voltage can be applied to the first force-applying element 40 and / or the second force-applying element 50, causing the first force-applying element 40 and / or the second force-applying element 50 to exert a force away from the substrate 20 on the bottom wall of the groove 13. This force cancels out the gas pressure, thus keeping the substrate 10 in a flat state. Therefore, the deformation of the substrate 10 remains small throughout the suction process, thereby improving the problem that the deformation of the substrate 10 does not change ideally linearly with the pressure, and thus improving the detection accuracy of the MEMS sensor 100 in this embodiment.

[0183] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0184] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0185] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A MEMS sensor, characterized in that, include: The substrate has opposing first and second surfaces, the first surface having a groove and the second surface having a Wheatstone bridge circuit, the bridge arms of the Wheatstone bridge circuit including varistors; A passivation layer covers the second surface of the substrate; A substrate, covering the groove to form a sealed cavity between itself and the substrate; The first force-applying element is at least partially disposed on the side of the passivation layer away from the substrate; The second force-applying element is at least partially disposed on the bottom wall of the groove; Conductive contacts are disposed on the substrate and / or the base plate, and are electrically connected to the first force-applying element and the second force-applying element, respectively; Both the first force-applying element and the second force-applying element are configured to apply a force to the bottom wall of the groove, either close to or far from the substrate, when energized.

2. The MEMS sensor according to claim 1, characterized in that, The first force-applying element includes: The first lower electrode plate is disposed on the surface of the passivation layer away from the substrate; The first upper electrode plate is disposed at a distance from the first lower electrode plate on the side away from the substrate; The first upper electrode plate and the first lower electrode plate are configured to repel or attract each other when energized.

3. The MEMS sensor according to claim 2, characterized in that, The edge portion of the first upper electrode plate is disposed on the surface of the passivation layer away from the substrate, and the middle portion is suspended on the side of the first lower electrode plate away from the substrate; The middle portion of the first upper electrode plate and the first lower electrode plate together form a parallel plate capacitor; the conductive contacts include a first conductive contact electrically connected to the first upper electrode plate and a second conductive contact electrically connected to the first lower electrode plate.

4. The MEMS sensor according to claim 2, characterized in that, One of the first upper electrode plate and the first lower electrode plate comprises a permanent magnet material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or Both the first upper electrode plate and the first lower electrode plate are electromagnets; the conductive contacts are electrically connected to the first upper electrode plate and the first lower electrode plate respectively, and are used to change the polarity of the electromagnet.

5. The MEMS sensor according to claim 1, characterized in that, The first force-applying element includes a first deformable material layer disposed on the surface of the passivation layer away from the substrate. The first deformable material layer is configured to deform under energization, thereby applying a force toward or away from the substrate to the bottom wall of the groove.

6. The MEMS sensor according to any one of claims 1-5, characterized in that, The second force-applying element includes: The second lower electrode plate is disposed on the surface of the substrate exposed to the sealed cavity; The second upper electrode plate is disposed on the bottom surface of the groove; The second upper electrode plate and the second lower electrode plate constitute a parallel plate capacitor; the conductive contacts include a third conductive contact electrically connected to the second upper electrode plate and a fourth conductive contact electrically connected to the second lower electrode plate.

7. The MEMS sensor according to any one of claims 1-5, characterized in that, The second force-applying element includes: The second lower electrode plate is disposed on the surface of the substrate exposed to the sealed cavity; The second upper electrode plate is disposed on the bottom surface of the groove; In this configuration, one of the second upper electrode plate and the second lower electrode plate comprises a permanent magnet material, and the other is an electromagnet. The conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or, Both the second upper electrode plate and the second lower electrode plate are electromagnets; the conductive contacts are electrically connected to the second upper electrode plate and the second lower electrode plate respectively, and are used to change the polarity of the electromagnets.

8. The MEMS sensor according to any one of claims 1-5, characterized in that, The second force-applying element includes a second deformable material layer disposed on the bottom surface of the groove. The second deformable material layer is configured to deform under energization, thereby applying a force to the bottom wall of the groove toward or away from the substrate.

9. The MEMS sensor according to claim 1, characterized in that, The Wheatstone bridge circuit includes four sets of varistors, which generate resistance changes in response to pressure changes applied to the substrate, thereby converting the pressure signal into an electrical signal; the Wheatstone bridge circuit also includes four sets of conductive regions for leading out the electrical signal.

10. The MEMS sensor according to claim 9, characterized in that, The substrate is a semiconductor substrate; each group of varistors includes two parallel and spaced sub-varistors, and a heavily doped ohmic contact region formed between the sub-varistors, the heavily doped ohmic contact region being used to electrically connect the sub-varistors in the group of varistors.

11. The MEMS sensor according to claim 10, characterized in that, The varistor and the heavily doped ohmic contact region are formed on the substrate, which is also covered with a dielectric layer, and four sets of the conductive regions are formed on the dielectric layer.

12. The MEMS sensor according to claim 11, characterized in that, The dielectric layer is further covered with the passivation layer on the side away from the substrate, and the four sets of conductive regions are at least partially exposed in the passivation layer.

13. An electronic atomizing device, characterized in that, include: Liquid storage component for storing aerosol generation matrix; Atomizing component for atomizing the aerosol generating matrix; The MEMS sensor is the MEMS sensor as described in any one of claims 1-12; the MEMS sensor is disposed on the airflow channel of the electronic atomization device and is used to detect the air pressure change in the airflow channel; A power source is provided to supply voltage to the atomizing assembly and the MEMS sensor.

14. The electronic atomizing device according to claim 13, characterized in that, Also includes: The control circuit is electrically connected to the power supply, the atomizing component, and the MEMS sensor, respectively. The control circuit is used to control the power supply to apply an electrical signal to the first force-applying element and / or the second force-applying element according to the amount of change in the output voltage of the MEMS sensor caused by the change in air pressure in the airflow channel. As a result, the first force-applying element and / or the second force-applying element apply a force to the bottom wall of the groove, either close to or away from the substrate, so that the amount of change in the output voltage of the MEMS sensor is less than or equal to a preset threshold.

15. The electronic atomizing device according to claim 14, characterized in that, The preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when the change in the output voltage of the MEMS sensor is detected to be zero, to determine the magnitude of the air pressure based on the electrical signal applied to the first force-applying element and / or the second force-applying element.

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