An accelerated life test method for satellite high-voltage electronic components

By conducting accelerated life tests on satellite high-voltage electronic components with a single constant temperature stress and timed truncation, combined with the exponential Arrhenius model and acceleration factor calculation, the life verification problem of satellite high-voltage electronic components with a small number of samples and long life was solved, and a comprehensive life assessment and reliability analysis was achieved.

CN118818174BActive Publication Date: 2025-09-26LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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Patent Information

Application Number
CN202410763222.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-13
Publication Date
2025-09-26
Estimated Expiration
2044-06-13

AI Technical Summary

Technical Problem

The existing accelerated life test method for high-voltage electronic components is not suitable for satellite high-voltage electronic components with small samples and long life, and cannot effectively verify their life characteristics and acceleration factors.

Method used

A single constant temperature stress time truncation test method was used to conduct accelerated life tests on satellite high-voltage electronic components under different operating conditions. The exponential Arrhenius model was used for reliability assessment. Combined with the acceleration factor calculation and the equivalent rated stress test time model, the accelerated life test of a single sample was carried out.

Benefits of technology

A comprehensive analysis of satellite high-voltage electronic components has been achieved, solving the problem of small sample size, and enabling a comprehensive assessment of their life characteristics and reliability through test results under different working conditions.

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Abstract

The present invention provides an accelerated life test method for satellite high-voltage electronic components. This method, based on the small sample size and long lifespan of satellite high-voltage electronic components, conducts comprehensive product performance analysis and research on accelerated life testing methods for satellite high-voltage electronic components in a ground-based simulated space environment. The method specifically involves determining the operating point and corresponding operating time of the satellite high-voltage electronic component in an application scenario, selecting a single constant stress accelerated test method, calculating the operating temperature, acceleration factor, and test time corresponding to each operating point of the satellite high-voltage electronic component, and conducting tests that sequentially perform an identification-level environmental test, a cyclic thermal vacuum aging test, a component performance test, a high-temperature accelerated life test, and a component performance test. The high-temperature accelerated life test sequentially performs tests at each operating point according to the corresponding operating temperature and test time, thereby completing the accelerated life test of the satellite high-voltage electronic component.
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Description

Technical Field

[0001] The present invention belongs to the technical field of test methods, and specifically relates to an accelerated life test method for satellite high-voltage electronic components. Background Art

[0002] Satellite high-voltage electronic component life test is a reliability verification test. According to the intensity of the stress applied in the test, product life test can be divided into normal stress test and accelerated life test. Existing high-voltage electronic component accelerated life test methods mainly include constant stress, step stress and sequential stress accelerated life test methods, such as Figure 1 shown.

[0003] 1) Constant stress accelerated life test is to divide the products into several groups and conduct them simultaneously. Each group can have a different "load" level, until a certain number of products in each group fail.

[0004] 2) Step stress accelerated life test is a test method that gradually increases the stress on the test piece in stages over time, and the stress level increases step by step from low to high until the test piece fails.

[0005] 3) Progressive stress accelerated life test method is a test method that increases stress to the test product sample at a constant rate over time until the sample begins to fail in large numbers.

[0006] Currently, the most mature experimental approach, both in terms of theory and methodology, for identifying product life characteristics and acceleration factors is the constant stress accelerated life test. This involves dividing a certain number of test products into several groups, subjecting each group to a fixed stress level. Each stress level is required to be higher than the stress level under normal operating conditions. The test continues until a certain number of test products in each group fail. The test requires at least four stress levels, with no fewer than five samples at each level, and the failure rate at each stress level must be greater than 50%.

[0007] This shows that constant stress accelerated life testing uses statistical methods to determine the product's lifespan at actual stress levels based on a certain number of samples and different stress levels. However, it is not applicable to products such as satellite high-voltage electronic components, which have a small number of test samples and a long lifespan. Summary of the Invention

[0008] In view of the characteristics of small sample and long life of satellite high-voltage electronic components, through comprehensive performance analysis of the product, research on accelerated life test method of satellite high-voltage electronic components in ground simulated space environment is carried out, which is an accelerated life test method for satellite high-voltage electronic components.

[0009] The technical solutions for implementing the present invention are as follows:

[0010] An accelerated life test method for satellite high-voltage electronic components, the specific process is as follows:

[0011] Determine that the satellite high-voltage electronic components to be tested are qualified components after functional and environmental stress screening tests;

[0012] Determining that the stress applied in the accelerated life test is temperature, and selecting an accelerated evaluation model, the evaluation model including a reliability evaluation model, a test acceleration factor calculation model, and an equivalent rated stress test time model;

[0013] Determine the operating point and corresponding operating time of the satellite high-voltage electronic components in the application scenario, select a single constant stress accelerated test method; calculate the operating temperature, acceleration factor and test time corresponding to each operating point of the satellite high-voltage electronic components;

[0014] The tests include: performing identification-level environmental tests, cyclic thermal vacuum aging tests, component performance tests, high-temperature accelerated life tests and component performance tests in sequence; wherein the high-temperature accelerated life tests are conducted in sequence for each working point according to the corresponding working temperature and test time; thereby completing the accelerated life test of satellite high-voltage electronic components.

[0015] Furthermore, the process of calculating the operating temperature corresponding to each operating point of the satellite high-voltage electronic component according to the present invention is as follows:

[0016] When the component is a relay, the operating temperature is set to a fixed value;

[0017] When the component is not a relay, the temperature difference between the level II derating temperature and the level I derating temperature of the component is calculated, the mounting surface temperature of the component meeting the level I derating is obtained, and the operating temperature is determined according to the mounting surface temperature and the temperature difference.

[0018] Furthermore, in the present invention, when the component is not a relay, the operating temperature is the sum of the installation surface temperature and the middle value of the temperature difference range.

[0019] Furthermore, the test time described in the present invention is: the accelerated life time of each working point of the high-voltage electronic component is 1.204 times the working time / acceleration factor.

[0020] Furthermore, the identification-level environmental tests described in the present invention include mechanical tests, environmental stress screening tests, thermal cycle tests, thermal vacuum tests, high-temperature storage, low-temperature storage, thermal vacuum aging tests, EMC and ESD tests.

[0021] Furthermore, the mechanical tests described in the present invention include acceleration, impact response, sinusoidal vibration, and random vibration tests.

[0022] Beneficial effects

[0023] Compared with the more conventional accelerated life tests of high-voltage electronic components, this test method adopts a single constant temperature stress timed truncation test method to conduct accelerated life tests on different working conditions of satellite high-voltage electronic components. This not only solves the problem of small sample size of tested products, but also allows for a comprehensive analysis of high-voltage electronic components through the test results under different working conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 This is a schematic diagram of the accelerated life test of existing high-voltage electronic components;

[0026] Figure 2 Design a flow chart for the accelerated life test protocol of the present invention;

[0027] Figure 3 This is a block diagram of a single constant stress test of the present invention;

[0028] Figure 4 This is a flow chart of the life test of satellite high-voltage electronic components of the present invention. DETAILED DESCRIPTION

[0029] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0030] It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments may be combined with each other; and, based on the embodiments in this disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative work are within the scope of protection of this disclosure.

[0031] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on this disclosure, it should be understood by those skilled in the art that an aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects described herein can be used to implement an apparatus and / or practice a method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this apparatus and / or practice this method.

[0032] The embodiment of the present application provides an accelerated life test method for satellite high-voltage electronic components. Based on the characteristics of satellite high-voltage electronic components, the long life and high reliability requirements of satellite high-voltage electronic components are verified under small sample conditions. Through comprehensive analysis of satellite high-voltage electronic components, a single constant temperature stress timed truncation test method can be carried out for different working points of satellite high-voltage electronic components when only one sample is available to perform accelerated life tests. The flowchart of the specific scheme design is as follows. Figure 2 The specific steps are as follows:

[0033] (1) Determination of the status of the test product

[0034] The test product must have completed the functional and environmental stress screening tests and its performance must be qualified before it can undergo accelerated life testing, and the test pieces should be selected from the same design finalization state.

[0035] (2) Determination of accelerated stress type

[0036] Analysis shows that the on-orbit operating life of high-voltage electronic components is primarily affected by electrical and thermal stresses. However, components within typical satellite high-voltage electronic components meet GJB Class I derating requirements. Therefore, the primary external cause of product failure is thermal stress from the satellite high-voltage electronic components themselves and from surrounding equipment in the on-orbit vacuum environment. However, the voltage stress within the components of a high-voltage electronic component is determined by the input and output interface constraints and cannot be adjusted. Therefore, the stress applied during the accelerated life testing of high-voltage electronic components is determined by temperature.

[0037] (3) Determine product life distribution and acceleration model

[0038] Considering the characteristics of satellite high-voltage electronic components, such as small sample and long life, and based on the analysis of their failure modes and failure mechanisms, satellite high-voltage electronic components are mainly electronic products with no significant performance degradation characteristics. Their failure mode is random failure and obeys the exponential distribution model. Therefore, a single sample single constant temperature stress accelerated life test method is used for accelerated life testing. By collecting accelerated life test data, reliability evaluation is performed based on the exponential Arrhenius model. The accelerated evaluation model is as follows:

[0039] (1) The reliability evaluation model is shown in the following formula:

[0040]

[0041] Where: V is the accelerated stress, unit is K, B, C are unknown coefficients, where B = E a / K,E a is the activation energy, K = 8.623×10-5eV / K.

[0042] (2) The calculation formula of the test acceleration factor is as follows:

[0043]

[0044] Where: T0 is the rated operating temperature, T i is the acceleration temperature, the unit is K, K is the Boltzmann constant, K = 8.623 × 10-5 eV / K, E a The activation energy of the product.

[0045] (3) Calculate the test time under equivalent rated stress:

[0046] t ij =AF i ×T ij

[0047] Where: AF i is the acceleration factor under the i-th group of stress, T ij is the test time under the i-th group of stress.

[0048] (4) Stress application method

[0049] In view of the characteristics of small sample and long life of satellite high-voltage electronic components, when there is only one test product, the accelerated life test is carried out on each working point according to the mission profile analysis of the satellite high-voltage electronic components, as shown in Table 1. For example, the working time of each working point and the accelerated life test block diagram of a certain high-voltage electronic component are shown in the figure below. Figure 3 As shown:

[0050] Table 1 Correspondence between the working time of each working point of a high-voltage electronic component

[0051]

[0052]

[0053] (V) Determination of stress level and test time

[0054] (1) Determination of stress level

[0055] The stress level is the test temperature, and the accelerated stress level should be determined to ensure that the failure mechanism triggered by these stresses is the same as the failure mechanism under normal conditions. The accelerated temperature stress for the accelerated life test of satellite high-voltage electronic components can be determined based on the component derating criteria and the results of the satellite high-voltage electronic component thermal balance test.

[0056] According to the functional design analysis of satellite high-voltage electronic components, when the mounting surface of the satellite high-voltage electronic components is 50°C and all components meet the first-level derating, in order to avoid the change of failure mode caused by accelerated stress and ensure the effectiveness of the accelerated life test, the junction temperature of the components under accelerated stress is controlled with reference to the level II derating temperature.

[0057] The maximum junction temperatures of various types of devices inside satellite high-voltage electronic components, as well as the GJB / Z35 requirements for the operating junction temperatures of various components at different derating levels, are shown in Table 2 below.

[0058] Table 2 Comparison of the maximum junction temperature of main components and different levels of derating temperature

[0059]

[0060]

[0061] Since relays do not generate heat themselves, an ambient temperature of +10°C can represent their temperature. Therefore, the permissible ambient temperature is 95°C. Except for relays, the temperature difference between the Level II and Level I derating temperatures is 15°C to 25°C, with the median of 20°C being used. Therefore, the accelerated life test temperature for satellite high-voltage electronic components can be increased by 20°C from 50°C to 70°C. Conducting accelerated life tests on satellite high-voltage electronic components at a constant temperature of 70°C achieves a certain degree of acceleration while ensuring that failure modes are not altered.

[0062] (2) Determination of test time

[0063] Given the small sample size and long lifespan of satellite high-voltage electronic components, and based on analysis of previous accelerated life tests on similar products, a timed truncation test method is used to determine the end time of the test. After the test, a one-sided confidence level can be used to evaluate the estimated MTBF. Based on the "Q / QJA 307-2014 Requirements for Reliability Assessment of Standalone Aerospace Products," the lower limit of the product's mean time between failures (MTBF) is verified at a confidence level of 0.7. The total test time, T, and the lower limit of the MTBF satisfy the following relationship:

[0064]

[0065] In the absence of failure (r = 0), It is 2.4079 (obtained from GB / T 4086.2). From this we can see that, at a confidence level of 0.7, the lower limit of the total test time is 1.204 times the required task time.

[0066] According to the accelerated life test method, the lower limit of the total test time of the high-voltage electronic component life test can be determined based on the sum of 1.204 times the working time of each working point; according to the exponential Arrhenius model, the accelerated life time of each working point of the high-voltage electronic component is the working time at 1.204 times / acceleration factor, and the accelerated life test time of the satellite high-voltage electronic component is the sum of the accelerated test time of each working point of the satellite high-voltage electronic component under the applied accelerated stress.

[0067] The accelerated life test time of each working point is shown in the following table. With the known working time and working temperature of each working point and the selected test temperature, the acceleration factor and test time are calculated according to the exponential Arrhenius model, as shown in Table 3.

[0068] Table 3 Comparison of maximum operating temperature, acceleration factor and test time of main components

[0069]

[0070]

[0071] (6) Determination of test content

[0072] Based on the on-orbit data of satellite high-voltage electronic components and the analysis of their failure modes and failure mechanisms, in the long run, the "loss of insulation" effect of satellite high-voltage electronic components is related to thermal or thermo-mechanical aging, which is usually accompanied by chemical aging and (especially in space) radiation-induced degradation. Therefore, satellite high-voltage electronic components should be tested with highly accelerated life tests in combination with on-orbit vacuum environment factors, and accelerated life tests should be carried out for different on-orbit working conditions of satellite high-voltage electronic components. The specific test process is as follows: Figure 4 shown.

[0073] Qualification-level environmental tests include mechanical (acceleration, shock response, sinusoidal vibration, random vibration) tests, environmental stress screening tests, thermal cycle tests, thermal vacuum tests, high-temperature storage, low-temperature storage, thermal vacuum aging tests, EMC and ESD tests, etc.

[0074] (VII) Test termination criteria

[0075] The test may be terminated in the following cases: (1) the test reaches the scheduled test time; (2) the satellite high-voltage electronic components fail.

[0076] Given the small sample sizes and long lifespans of satellite high-voltage electronic components, a comprehensive performance analysis of the products was conducted to investigate accelerated lifespan testing methods for satellite high-voltage electronic components in a simulated space environment on the ground. Conventional accelerated life testing relies on lifespan tests conducted on a certain number of samples at varying stress levels. This study employed a different accelerated lifespan testing method, employing a single constant temperature stress to conduct accelerated lifespan tests on a single test sample under different operating conditions. By determining the actual operating conditions and duration of satellite high-voltage electronic components in orbit, accelerated lifespan testing methods were conducted for each operating condition, providing support for the development of accelerated lifespan testing methods for satellite high-voltage electronic components in my country.

[0077] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. An accelerated life test method for satellite high-voltage electronic components, characterized in that: The specific process is: Determine that the satellite high-voltage electronic components to be tested are qualified components after functional and environmental stress screening tests; Determining that the stress applied in the accelerated life test is temperature, and selecting an accelerated evaluation model, the evaluation model including a reliability evaluation model, a test acceleration factor calculation model, and an equivalent rated stress test time model; Determine the operating point and corresponding operating time of the satellite high-voltage electronic component in the application scenario, and select a single constant stress accelerated test method; calculate the operating temperature corresponding to each operating point of the satellite high-voltage electronic component, calculate the acceleration factor based on the test acceleration factor calculation model, and calculate the test time based on the equivalent rated stress test time model and the acceleration factor; The tests include: sequentially executing identification-level environmental tests, cyclic thermal vacuum aging tests, component performance tests, high-temperature accelerated life tests, and component performance tests; wherein the high-temperature accelerated life tests are conducted in sequence for each operating point according to the corresponding operating temperature and test time; and using a reliability assessment model for evaluation, thereby completing the accelerated life test of satellite high-voltage electronic components.

2. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The process of calculating the operating temperature corresponding to each operating point of the satellite high-voltage electronic component is as follows: When the component is a relay, the operating temperature is set to a fixed value; When the component is not a relay, the temperature difference between the level II derating temperature and the level I derating temperature of the component is calculated, the mounting surface temperature of the component meeting the level I derating is obtained, and the operating temperature is determined according to the mounting surface temperature and the temperature difference.

3. The accelerated life test method for satellite high-voltage electronic components according to claim 2, characterized in that: When the component is not a relay, the operating temperature is the sum of the mounting surface temperature and the middle value of the temperature difference range.

4. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The test time is: the accelerated life time of each working point of the high-voltage electronic component is 1.204 times the working time / acceleration factor.

5. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The identification-level environmental tests include mechanical tests, environmental stress screening tests, thermal cycle tests, thermal vacuum tests, high-temperature storage, low-temperature storage, thermal vacuum aging tests, EMC and ESD tests.

6. The accelerated life test method for satellite high-voltage electronic components according to claim 5, characterized in that: The mechanical tests include acceleration, impact response, sinusoidal vibration, and random vibration tests.

7. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The reliability evaluation model is: Where: V is the accelerated stress, B and C are unknown coefficients, where B = E a / K,E a is the activation energy, and K is the Boltzmann constant.

8. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The test acceleration factor calculation model is: Where: T0 is the rated operating temperature, T i is the acceleration temperature, K is the Boltzmann constant, E a The activation energy of the product.

9. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The equivalent rated stress test time model is: t ij =OFF i ×T ij Where: AF i is the acceleration factor under the i-th group of stress, T ij is the test time under the stress of group i, t ij is the equivalent rated stress test time.

10. The accelerated life test method for satellite high-voltage electronic components according to claim 1, characterized in that: The test may be terminated in the following cases: (1) the test reaches the scheduled test time; (2) the satellite high-voltage electronic components fail.