Polyvinylidene fluoride dielectric composite film and method for preparing the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHAANXI UNIV OF SCI & TECH
- Filing Date
- 2024-08-13
- Publication Date
- 2026-05-26
AI Technical Summary
Traditional methods for preparing β-PVDF thin films are complex and costly, and filler blending leads to increased dielectric loss and reduced breakdown strength, limiting their application in energy storage devices.
Polyvinylidene fluoride (PVDF) was treated with defluorinated hydrogen and lead zirconate titanate powder was added. PVDF dielectric composite films were then prepared by solution casting and hot pressing to modify the molecular structure, thereby increasing the β-phase content and dielectric constant, and reducing dielectric loss.
The preparation process has been simplified, equipment costs have been reduced, and stable composite films with high dielectric constant and low dielectric loss have been prepared, making them suitable for large-scale production.
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Figure CN118852690B_ABST