A method and device for evaluating SEB performance of power MOSFET

Abstract

The present invention discloses a method and device for evaluating SEB performance of power MOSFET, the method comprising: receiving a single particle performance evaluation query request carrying unit process space structure parameters and electrical performance parameters of a basic unit constituting the power MOSFET; querying whether the carried unit process space structure parameters have SEB effect from the pre-established correspondence between the unit process space structure parameters and the SEB effect, querying the linear energy transfer threshold corresponding to the carried electrical performance parameters from the pre-established correspondence between the electrical performance parameters and the linear energy transfer threshold; and outputting the query result. Because a database of the correspondence between the unit process space structure parameters and the SEB effect and the correspondence between the electrical performance parameters and the linear energy transfer threshold is established, when the unit process space structure parameters and the electrical performance parameters match the data in the database, the SEB performance of the power MOSFET can be quickly evaluated.

Description

Technical Field

[0001] The present application relates to the technical field of reliability of electronic components for space and aerospace applications, and in particular to a method and device for evaluating SEB performance of a power MOSFET. Background Art

[0002] Electronic components in space applications will inevitably encounter space radiation environments and radiation effects that are not encountered in ground applications. Therefore, it is necessary to know the radiation characteristics of components to ensure their reliability in space applications. For power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), the space radiation effects include cumulative effects and transient effects. The cumulative effect refers to the TID effect (Total Ionizing Dose Effects), and the transient effect refers to the SEB effect (Single Event Burnout) and SEGR effect (Single Event Gate Rupture). SEB and SEGR will cause the power MOSFET to fail directly, especially SEB, which will cause the entire device to fail to work properly.

[0003] At present, the radiation performance of power MOSFET is obtained directly through radiation testing, which uses gamma rays, protons, neutrons and high-energy charged particles generated by accelerators to directly irradiate power MOSFET. Because accelerator resources are scarce and cannot be operated all year round, the test is expensive and the appointment time for the test machine is several months. At the same time, in the initial stage of aerospace missions, the radiation test conducted after the power MOSFET is selected often has subversive results, resulting in delays in the development progress of aerospace missions and increased costs, which cannot meet the development progress and cost requirements of aerospace missions, especially the radiation characteristics evaluation needs of power MOSFET for commercial aerospace. Therefore, it is more important to quickly evaluate its radiation performance during the selection process of power MOSFET in the initial stage of aerospace missions. Summary of the invention

[0004] The purpose of the present invention is to overcome the defect that the prior art cannot quickly evaluate the radiation performance of a power MOSFET, and proposes a SEB performance evaluation method and device for a power MOSFET.

[0005] A method for evaluating SEB performance of a power MOSFET, comprising:

[0006] Receiving a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET;

[0007] From the pre-established correspondence between the unit process space structure parameter and the SEB effect, query whether the unit process space structure parameter carried in the request has the SEB effect, and from the pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold, query the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request;

[0008] When the existence of SEB effect is found, the found linear energy transfer threshold is output as the evaluation result;

[0009] When it is found that the SEB effect does not exist, the SEB effect does not exist is output as the evaluation result.

[0010] In a method for evaluating SEB performance of a power MOSFET, the electrical performance parameters include one or more of breakdown voltage, reverse recovery time and leakage current.

[0011] In a method for evaluating SEB performance of a power MOSFET, it also includes: using test data to establish a corresponding relationship between the unit process space structure parameter and the SEB effect and a corresponding relationship between the electrical performance parameter and the linear energy transfer threshold.

[0012] In a method for evaluating SEB performance of a power MOSFET, the corresponding relationship between the electrical performance parameters and the linear energy transfer threshold established using test data includes:

[0013] Using the linear energy transfer threshold test data of power MOSFET, a curve of linear energy transfer threshold and electrical performance parameters is established, and the mathematical equation that the curve obeys is found. This mathematical equation is used as the correspondence between the electrical performance parameters of the basic units constituting power MOSFET and the linear energy transfer threshold.

[0014] In a method for evaluating SEB performance of a power MOSFET, the method further includes:

[0015] The corresponding relationship between the electrical performance parameters and the linear energy transfer threshold is updated using the newly added experimental data, and the corresponding relationship between the unit process space structure parameters and the SEB effect is updated.

[0016] In a method for evaluating SEB performance of a power MOSFET, the correspondence between the unit process space structure parameter and the SEB effect also corresponds to the manufacturer identification and series classification identification of the power MOSFET; the correspondence between the electrical performance parameter and the linear energy transfer threshold also corresponds to the manufacturer identification and series classification identification of the power MOSFET;

[0017] The request also carries the manufacturer identification and series classification identification of the power MOSFET;

[0018] From the pre-established correspondence between the unit process space structure parameter and the SEB effect, query whether the unit process space structure parameter carried in the request has the SEB effect, specifically including:

[0019] From the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and SEB effect of the power MOSFET, query whether the manufacturer identification, series classification identification and unit process space structure parameters carried in the request have SEB effect;

[0020] From the pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold, querying the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request specifically includes:

[0021] From the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and linear energy transfer threshold of the power MOSFET, query the linear energy transfer threshold corresponding to the manufacturer identification, series classification identification and electrical performance parameters carried in the request.

[0022] On the other hand, the present invention provides a SEB performance evaluation device for a power MOSFET, comprising: a receiving unit, a storage unit, a query unit and an output unit, wherein:

[0023] A receiving unit receives a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET;

[0024] A storage unit for pre-established correspondence between unit process space structure parameters and SEB effect and pre-established correspondence between electrical performance parameters and linear energy transfer threshold;

[0025] A query unit, used to query whether the unit process space structure parameter carried in the request has a SEB effect from a pre-established correspondence between the unit process space structure parameter and the SEB effect, and query the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request from a pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold;

[0026] The output unit is used to output the queried linear energy transfer threshold as an evaluation result when the SEB effect is found to exist; and to output the non-existence of the SEB effect as an evaluation result when the SEB effect is found to exist.

[0027] In a SEB performance evaluation device for a power MOSFET, the electrical performance parameters include one or more of a breakdown voltage, a reverse recovery time and a leakage current.

[0028] In a SEB performance evaluation device for a power MOSFET, it also includes: a corresponding relationship establishment unit, which is used to establish the corresponding relationship between the unit process space structure parameter and the SEB effect and the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold using test data.

[0029] In a SEB performance evaluation device for a power MOSFET, the correspondence establishing unit is specifically used to use the linear energy transfer threshold test data of the power MOSFET to establish a curve of the linear energy transfer threshold and the electrical performance parameters, find out the mathematical equation that the curve obeys, and use the mathematical equation as the correspondence between the electrical performance parameters of the basic units constituting the power MOSFET and the linear energy transfer threshold.

[0030] The corresponding relationship establishing unit is also used to update the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold value by using the newly added test data, and to update the corresponding relationship between the unit process space structure parameter and the SEB effect.

[0031] Compared with the prior art, the advantages of the present invention are:

[0032] 1. Easy to implement. Accelerator irradiation tests require a dedicated irradiation shielding site, and the radiation source is strictly controlled by the state, while this technical solution can be implemented in an ordinary laboratory environment.

[0033] 2. Rapid evaluation. Domestic accelerator resources are limited, and it usually takes about a year to queue up to reserve a test machine. However, this technical solution can be carried out at any time in the laboratory and completed within a week.

[0034] 3. Low cost. The accelerator is expensive to build, operate and maintain and cannot be operated all year round. The cost of a single test is about 200,000 yuan, while the price of a single implementation of this technical solution is less than 50,000 yuan.

[0035] 4. Comprehensive coverage. Accelerator irradiation tests are expensive and require long machine waiting times. Due to task schedule and funding constraints, SEB irradiation tests cannot be performed on all power MOSFETs. This technical solution can conduct SEB performance evaluation on all power MOSFETs while meeting task schedule and funding requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A flow chart of a method for evaluating SEB performance of a power MOSFET provided in Example 1 of the present invention;

[0037] Figure 2 A flow chart of a method for evaluating SEB performance of a power MOSFET provided in Example 2 of the present invention;

[0038] Figure 3A flow chart of a method for evaluating SEB performance of a power MOSFET provided in Example 3 of the present invention;

[0039] Figure 4 This is a schematic structural diagram of a SEB performance evaluation device for a power MOSFET provided in Example 4 of the present invention. DETAILED DESCRIPTION

[0040] From the physics of semiconductor devices and irradiation failure physics, we know that the SEB of power MOSFET is that charged particles in space trigger the parasitic transistor between the source and drain and turn it on, and the parasitic transistor breaks down and burns under the applied source-drain voltage. At the same time, the parasitic diode connected in parallel with the parasitic transistor has a reverse recovery mode, which causes the source-drain breakdown and burns. In the manufacturing process, the power MOSFET is composed of multiple identical small transistors, that is, units connected in parallel, so the SEB performance parameter of the power MOSFET is the linear energy transfer threshold LET. th It is determined by its single unit, and its electrical breakdown is also determined by a single unit. Therefore, after determining that the power MOSFET has the SEB effect, and obtaining the correlation between the linear energy transfer threshold of the power MOSFET and its electrical performance parameters, the SEB performance of the MOSFET with the same unit process can be quickly evaluated. This SEB performance evaluation technology for power MOSFET does not require accelerator irradiation testing, and does not require separate sampling. It is easy to implement, fully covered, fast and low-cost, and provides a new solution to the current situation of difficult evaluation of irradiation characteristics of existing space components.

[0041] The technical solution of the present invention is described in detail below with reference to the accompanying drawings and embodiments.

[0042] Example 1

[0043] like Figure 1 As shown, a method for evaluating SEB performance of a power MOSFET provided by an embodiment of the present invention comprises the following steps:

[0044] Step 101: receiving a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET;

[0045] Specifically, the electrical performance parameters include one or more of breakdown voltage, reverse recovery time and leakage current.

[0046] Specifically, the electrical performance parameters of the power MOSFET can be obtained through measurement.

[0047] The unit process spatial structure parameters of the power MOSFET can be obtained by performing a series of operations on the power MOSFET, such as depackaging, removing the metal layer, cross-section cutting and scanning electron microscope inspection.

[0048] Step 102: querying whether the unit process space structure parameter carried in the request has a SEB effect from the pre-established correspondence between the unit process space structure parameter and the SEB effect;

[0049] It should be noted that the structure of power MOSFET is divided into two types: multi-cell structure and unit cell. The present invention is aimed at the power MOSFET of multi-cell structure, and the multi-cell is predicted by evaluating a single cell. Through structural analysis, the device process and structure are confirmed from the physical structure of the device, and it is determined that the multi-cell vertical structure is the power MOSFET of the present invention that can evaluate the SEB effect.

[0050] Step 103: querying the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request from the pre-established correspondence relationship between the electrical performance parameter and the linear energy transfer threshold;

[0051] The correspondence between the unit process space structure parameters and the SEB effect and the correspondence between the electrical performance parameters and the linear energy transfer threshold can be established using test data, and the test here can be an actual accelerator irradiation test.

[0052] Specifically, the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold can be established in the following manner:

[0053] Using the linear energy transfer threshold test data of power MOSFET, a curve of linear energy transfer threshold and electrical performance parameters is established, and the mathematical equation that the curve obeys is found. This mathematical equation is used as the correspondence between the electrical performance parameters of the basic units constituting power MOSFET and the linear energy transfer threshold.

[0054] Furthermore, after the new test data are added, the corresponding relationship between the electrical performance parameters and the linear energy transfer threshold can be updated using the new test data, and the corresponding relationship between the unit process space structure parameters and the SEB effect can be updated.

[0055] Step 104: determine whether it is possible to find out whether the SEB effect and the corresponding linear energy transfer threshold exist; if it is possible to find out, execute step 105; if it is not possible to find out, execute step 106;

[0056] Step 105: when it is found that the SEB effect exists, the queried linear energy transfer threshold is output as an evaluation result; when it is found that the SEB effect does not exist, the non-existence of the SEB effect is output as an evaluation result.

[0057] Step 106: Output not found, it is recommended to perform acceleration irradiation test on power MOSFET.

[0058] The evaluation method in Example 1 of the present invention can be used to evaluate a multi-unit parallel power MOSFET, such as a HEXFET process structure, or other types of multi-structure MOSFETs. Because a database of the correspondence between the unit process space structure parameters and the SEB effect and the correspondence between the electrical performance parameters and the linear energy transfer threshold is established, when the unit process space structure parameters and the electrical performance parameters of the basic units constituting the power MOSFET match the data in the database, the SEB performance of the power MOSFET can be quickly evaluated.

[0059] Example 2

[0060] Considering that SEB performances of different series and classifications of different manufacturers are different, in order to accurately evaluate the SEB performance of power MOSFET, the present invention provides another SEB performance evaluation method of power MOSFET through Example 2, such as Figure 2 As shown, the following steps are included:

[0061] Step 201: receiving a single particle performance evaluation query request, wherein the request carries a power MOSFET manufacturer identification, a series classification identification, and unit process space structure parameters and electrical performance parameters of a basic unit constituting the power MOSFET;

[0062] Step 202: querying whether the manufacturer identification, series classification identification, and unit process space structure parameters carried in the request have SEB effect from the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters, and SEB effect of the power MOSFET;

[0063] Step 203: query the linear energy transfer threshold corresponding to the manufacturer identification, series classification identification and electrical performance parameters carried in the request from the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and linear energy transfer threshold of the power MOSFET.

[0064] Step 204: determine whether it is possible to find out whether the SEB effect and the corresponding linear energy transfer threshold exist; if it is possible to find out, execute step 205; if it is not possible to find out, execute step 206;

[0065] Step 205: when it is found that the SEB effect exists, the queried linear energy transfer threshold is output as an evaluation result; when it is found that the SEB effect does not exist, the non-existence of the SEB effect is output as an evaluation result.

[0066] Step 206: Output not found, it is recommended to perform acceleration irradiation test on power MOSFET.

[0067] In addition, after adding new test data, the new test data can be used to update the correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and linear energy transfer threshold of the power MOSFET, and update the correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and SEB effect of the power MOSFET.

[0068] In the solution of Example 2 of the present invention, a database of the relationship between SEB and electrical performance parameters of power MOSFETs from different manufacturers and different series is established, thereby realizing accurate query of SEB performance of power MOSFETs.

[0069] The SEB performance evaluation method of the power MOSFET of the present invention is described in detail below through Example 3.

[0070] Example 3

[0071] like Figure 3 As shown, it is a flow chart of a SEB performance evaluation method for a power MOSFET provided in Example 3 of the present invention, comprising the following steps:

[0072] Step 301: According to the physics of semiconductor devices, SEB and RRD (Reverse Recovery Diode) models are established for the power MOSFET, and the electrical performance parameters to be tested are determined;

[0073] The SEB and RRD model here is to determine which electrical performance parameters in SEB and RRD are correlated.

[0074] MOSFET includes parasitic diodes and parasitic transistors. In the process layout, the parasitic diodes and parasitic transistors are in parallel. The physics of semiconductor devices can infer that there is a correlation between the two in performance. Since the parasitic diodes and parasitic transistors are in parallel in device physics, the SEB breakdown mechanism of power MOSFET and the RRM (Reverse Recovery Mode) breakdown test mechanism of parasitic diodes are similar. Both mechanisms amplify the internal particle current through parasitic transistors, eventually causing the MOSFET to break down. Therefore, the SEB breakdown characteristics can be predicted based on the reverse recovery characteristics of the parasitic diode.

[0075] Since there are many parameters in the power MOSFET device manual, it is necessary to find the parameters related to SEB. If the manual provides electrical performance parameters for evaluating SEB, no testing is required; if the device manual does not provide electrical performance parameters for evaluating SEB, testing is required.

[0076] Step 302: Analyze the accumulated test data of the linear energy transfer threshold of the power MOSFET, find out the corresponding relationship between the linear energy transfer threshold and the electrical performance parameter to be tested determined in step 301, find out the corresponding relationship between the unit process structure of the power MOSFET and the SEB effect, and then modify the model in step 301. According to the modified model, a database of the relationship between the linear energy transfer threshold and the electrical performance parameters of power MOSFETs of different manufacturers and different series is established.

[0077] Specifically, some electrical parameters related to SEB in the test data, such as reverse recovery time, reverse recovery energy, reverse recovery capacitance, forward on-resistance, dynamic on-resistance, breakdown voltage and leakage current, can be used to establish the above corresponding relationship.

[0078] In the semiconductor production process, there are parasitic transistors and parasitic diodes in the unit. The parasitic transistors are the cause of SEB. The spatial structure of the process layout determines the composition structure of the parasitic transistors and diodes, and the composition structure of the parasitic transistors determines the existence of the SEB effect.

[0079] The establishment and update of the above correspondence are explained below through a specific example:

[0080] Assume that there are experimental data of 30 MOSFETs including linear energy transfer threshold, breakdown voltage, reverse recovery time and leakage current, and if the SEB-RRD model established above is that there is a correlation between linear energy transfer threshold and breakdown voltage, reverse recovery time and leakage current, first use the data of 15 MOSFETs to establish a curve of the relationship between linear energy transfer threshold and electrical parameters. The relationship obeyed by the curve is, for example, the linear equation a+bx, the exponential equation a·e bx or other equations (the corresponding equation parameters are a and b, etc.); analyze the spatial structure of the unit process and determine that the parasitic transistor structure has SEB effect; then use the data of the remaining 15 pieces into the equation, and the corrected model through the fitting correction method is a'+b'x, a'·e b’x ; Use the modified equation to perform numerical calculations and establish a data relationship library, for example: a linear energy transfer threshold-reverse recovery time numerical library.

[0081] Step 303: obtaining a unit process structure of the evaluated power MOSFET, and simultaneously obtaining the electrical performance parameters to be tested determined in step 301 of the evaluated MOSFET;

[0082] Step 304: after obtaining the unit process and electrical performance data of the evaluated power MOSFET, query the database established in step 2 to determine the SEB irradiation performance of the evaluated power MOSFET, and input the evaluation result into the database as an evaluation report;

[0083] For the power MOSFET whose linear energy transfer threshold is to be evaluated, the electrical performance parameters such as breakdown voltage, reverse recovery time and leakage current are first measured, and then the corresponding linear energy transfer threshold is found from the database. The found linear energy transfer threshold is the evaluation result.

[0084] Step 305: If the database cannot provide the SEB performance evaluation result of the evaluated power MOSFET, an accelerator irradiation test of the SEB performance of the evaluated power MOSFET is performed, and the result is recorded in the database.

[0085] In view of the fact that the accelerator irradiation test is expensive, has a long queue time, and requires separate sampling, which makes the SEB performance evaluation of power MOSFETs for space aerospace difficult, and at the same time, the irradiation test conducted after the power MOSFET is selected in the initial sample stage of the aerospace mission is disruptive, which leads to the delay of the development progress of the aerospace mission and the increase of costs, the present invention proposes a method for rapid evaluation of the SEB performance of power MOSFETs. This method is based on electrical performance, integrates technical means such as semiconductor device physics, power MOSFET manufacturing process, big data and electrical performance testing, and technically realizes the association of power MOSFET electrical performance and its SEB performance. This power MOSFET single particle burnout characteristic evaluation technology does not require accelerator irradiation testing, and does not require separate sampling. It has the characteristics of easy implementation, full coverage, fast speed and low cost, and meets the needs of aerospace missions, especially commercial aerospace, for rapid SEB evaluation of MOSFETs.

[0086] Example 4

[0087] like Figure 4 As shown, it is a power MOSFET SEB performance evaluation device provided by Embodiment 4 of the present invention, comprising: a receiving unit, a storage unit, a query unit and an output unit; wherein:

[0088] A receiving unit 41 receives a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET;

[0089] A storage unit 42, used for pre-established correspondence between unit process space structure parameters and SEB effect and pre-established correspondence between electrical performance parameters and linear energy transfer threshold;

[0090] A query unit 43 is used to query whether the unit process space structure parameter carried in the request has a SEB effect from a pre-established correspondence between the unit process space structure parameter and the SEB effect, and query the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request from a pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold;

[0091] The output unit 44 is used to output the queried linear energy transfer threshold as the evaluation result when the SEB effect is found to exist; and to output the non-existence of the SEB effect as the evaluation result when the SEB effect is found to not exist.

[0092] The electrical performance parameters include one or more of breakdown voltage, reverse recovery time and leakage current.

[0093] Preferably, it further comprises: a corresponding relationship establishing unit 45, which is used to establish the corresponding relationship between the unit process space structure parameter and the SEB effect and the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold value by using the test data.

[0094] Preferably, the correspondence establishing unit 45 is specifically used to use the linear energy transfer threshold test data of the power MOSFET to establish a curve of the linear energy transfer threshold and the electrical performance parameters, find out the mathematical equation that the curve obeys, and use the mathematical equation as the correspondence between the electrical performance parameters of the basic units constituting the power MOSFET and the linear energy transfer threshold.

[0095] The corresponding relationship establishing unit 45 is further used to update the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold value by using the newly added test data, and to update the corresponding relationship between the unit process space structure parameter and the SEB effect.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention is described in detail with reference to the embodiments, it should be understood by those skilled in the art that any modification or equivalent replacement of the technical solutions of the present invention does not depart from the spirit and scope of the technical solutions of the present invention and should be included in the scope of the claims of the present invention.

Claims

1. A method for evaluating SEB performance of a power MOSFET, comprising: Receiving a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET; From the pre-established correspondence between the unit process space structure parameter and the SEB effect, query whether the unit process space structure parameter carried in the request has the SEB effect, and from the pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold, query the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request; When the existence of SEB effect is found, the found linear energy transfer threshold is output as the evaluation result; When it is found that there is no SEB effect, the non-existence of the SEB effect is output as the evaluation result; The method further comprises: using test data to establish a corresponding relationship between the unit process space structure parameter and the SEB effect and a corresponding relationship between the electrical performance parameter and the linear energy transfer threshold; The corresponding relationship between electrical performance parameters and linear energy transfer threshold established using test data includes: Using the linear energy transfer threshold test data of power MOSFET, a curve of linear energy transfer threshold and electrical performance parameters is established, and the mathematical equation that the curve obeys is found. This mathematical equation is used as the correspondence between the electrical performance parameters of the basic units constituting power MOSFET and the linear energy transfer threshold.

2. The SEB performance evaluation method of power MOSFET according to claim 1, characterized in that: The electrical performance parameters include one or more of breakdown voltage, reverse recovery time and leakage current.

3. The SEB performance evaluation method of power MOSFET according to claim 1, characterized in that: Also includes: The corresponding relationship between the electrical performance parameters and the linear energy transfer threshold is updated using the newly added experimental data, and the corresponding relationship between the unit process space structure parameters and the SEB effect is updated.

4. The SEB performance evaluation method of power MOSFET according to claim 1, characterized in that: The correspondence between the unit process space structure parameter and the SEB effect also corresponds to the manufacturer identification and series classification identification of the power MOSFET; the correspondence between the electrical performance parameter and the linear energy transfer threshold also corresponds to the manufacturer identification and series classification identification of the power MOSFET; The request also carries the manufacturer identification and series classification identification of the power MOSFET; From the pre-established correspondence between the unit process space structure parameter and the SEB effect, query whether the unit process space structure parameter carried in the request has the SEB effect, specifically including: From the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and SEB effect of the power MOSFET, query whether the manufacturer identification, series classification identification and unit process space structure parameters carried in the request have SEB effect; From the pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold, querying the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request specifically includes: From the pre-established correspondence between the manufacturer identification, series classification identification, unit process space structure parameters and linear energy transfer threshold of the power MOSFET, query the linear energy transfer threshold corresponding to the manufacturer identification, series classification identification and electrical performance parameters carried in the request.

5. A SEB performance evaluation device for a power MOSFET, characterized in that: include: A receiving unit, a storage unit, a query unit and an output unit, wherein: A receiving unit receives a single particle performance evaluation query request, wherein the request carries a unit process space structure parameter and an electrical performance parameter of a basic unit constituting a power MOSFET; A storage unit for pre-established correspondence between unit process space structure parameters and SEB effect and pre-established correspondence between electrical performance parameters and linear energy transfer threshold; A query unit, used to query whether the unit process space structure parameter carried in the request has a SEB effect from a pre-established correspondence between the unit process space structure parameter and the SEB effect, and query the linear energy transfer threshold corresponding to the electrical performance parameter carried in the request from a pre-established correspondence between the electrical performance parameter and the linear energy transfer threshold; An output unit, for outputting the queried linear energy transfer threshold as an evaluation result when the SEB effect is found to exist; and for outputting the non-existence of the SEB effect as an evaluation result when the SEB effect is found to exist; The device further comprises: a corresponding relationship establishing unit, which is used to establish the corresponding relationship between the unit process space structure parameter and the SEB effect and the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold value by using the test data; The corresponding relationship establishing unit is specifically used to establish a curve of linear energy transfer threshold and electrical performance parameters using the linear energy transfer threshold test data of the power MOSFET, find out the mathematical equation obeyed by the curve, and use the mathematical equation as the corresponding relationship between the electrical performance parameters of the basic unit constituting the power MOSFET and the linear energy transfer threshold; The corresponding relationship establishing unit is also used to update the corresponding relationship between the electrical performance parameter and the linear energy transfer threshold value by using the newly added test data, and to update the corresponding relationship between the unit process space structure parameter and the SEB effect.

6. The SEB performance evaluation device of power MOSFET according to claim 5, characterized in that: The electrical performance parameters include one or more of breakdown voltage, reverse recovery time and leakage current.

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