Crucible for ingot furnace, method for spraying crucible, and method for charging crucible

By combining specific charging methods, the silicon nitride coating without silicon sol on the bottom of the ingot furnace crucible, the silicon nitride coating without silicon sol on the side wall is solved, and the yield of silicon ingots is improved .

CN119101991APending Publication Date: 2024-12-10JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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Patent Information

Application Number
CN202310687924.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-06-09
Publication Date
2024-12-10

AI Technical Summary

Technical Problem

The silicon nitride coating of existing ingot furnace crucibles is easily damaged by silicon liquid at high temperatures, resulting in the bottom silicon ingot sticking to the pot and reducing the yield of silicon ingots.

Method used

Design an ingot furnace crucible with the bottom coating without silicon sol and the sidewall coating contains silicon sol. The silicon nitride coating is formed by spraying, and a specific charging method is used to reduce the high-temperature silicon liquid and the bottom of the crucible Probability of contact.

Benefits of technology

Effectively reduce the probability of sticking to the bottom silicon ingot, improve the yield of silicon ingot, reduce the wetting degree of silicon nitride and silicon liquid by not adding silicon sol to the first coating, and add it to the second coating Silicone sol enhances the adhesion of the side walls and reduces the probability of shedding.

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Abstract

The invention discloses a crucible of an ingot furnace, a spraying method of the crucible and a charging method of the crucible. The crucible comprises a crucible body, a spraying device and a charging device, wherein the inner surface of the crucible body comprises a side wall and a bottom wall; the first coating covers the bottom wall of the crucible, and the first coating is a silicon nitride coating which does not contain silica sol; and the second coating covers the side wall of the crucible, and the second coating comprises silica sol and silicon nitride. According to the crucible disclosed by the invention, the infiltration degree of high-temperature silicon liquid and silicon nitride can be reduced by not adding silica sol into the first coating, so that the probability that a silicon ingot at the bottom of the crucible sticks to the crucible is reduced, and the probability that the high-temperature silicon liquid impacts the second coating to cause the second coating to fall off can be reduced by adding silica sol into the second coating, so that the quality of the crucible is improved. And the yield of silicon ingots is improved.
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Description

Technical Field

[0001] The invention relates to the technical field of crystalline silicon ingot casting, and in particular to a crucible of an ingot casting furnace, a spraying method for the crucible, and a charging method for the crucible. Background Art

[0002] The ingot casting furnace is one of the important equipment for processing silicon materials. When using the ingot casting furnace to process silicon materials, a crucible is used in the ingot casting furnace to hold the silicon materials. At present, when preparing the crucibles used in the ingot casting furnace, most of them will spray a silicon nitride solution with added silica sol on the inner surface of the crucible to make the silicon nitride coating on the inner surface of the crucible more firm.

[0003] For example, the related technology CN103506263A discloses a method for spraying a polysilicon crucible without drying, comprising the steps of: 1) mixing silicon nitride, deionized water and silica sol to form a slurry solution; 2) atomizing the solution and spraying it onto the inner wall of the crucible, and forming a silicon nitride coating after natural drying.

[0004] The crucible prepared by the above method can form a silicon nitride coating on the inner surface of the crucible, but it is found during use that the silicon nitride coating on the bottom of the crucible is easily destroyed by silicon liquid, causing the bottom silicon ingot to stick to the pot, thereby reducing the yield rate of the silicon ingot. Summary of the invention

[0005] The present invention is based on the findings of the inventors of the present application regarding the following facts and problems:

[0006] The silica sol in the coating will increase the wetting degree of silicon liquid and silicon nitride. When heated, the silicon material on the top will melt first. After the silicon liquid flows to the bottom of the crucible, it will solidify first and then melt into liquid after the temperature at the bottom rises. The silicon nitride coating is easily damaged, causing the silicon ingot at the bottom of the crucible to stick to the pot.

[0007] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a crucible for an ingot casting furnace, which can reduce the probability of the bottom silicon ingot sticking to the pot.

[0008] The invention also provides a spraying method for the crucible.

[0009] The present invention also provides a method for charging the crucible.

[0010] The crucible of the ingot casting furnace according to the first aspect of the present invention comprises: a crucible body, the inner surface of the crucible body comprises side walls and a bottom wall; a first coating, the first coating covers the bottom wall of the crucible body, the first coating is a silicon nitride coating that does not contain silica sol; a second coating, the second coating covers the side walls of the crucible body, the second coating comprises silica sol and silicon nitride.

[0011] According to the crucible of the ingot casting furnace of the first aspect of the present invention, by not adding silica sol in the first coating, the degree of wetting of high-temperature silicon liquid and silicon nitride can be reduced, thereby reducing the probability of the bottom silicon ingot sticking to the pot and improving the yield rate of the silicon ingot.

[0012] In some embodiments of the present invention, the first solution for coating the first coating layer comprises silicon nitride and water, and the mass ratio of silicon nitride to water in the first solution is (300-500):(400-600).

[0013] In some embodiments of the present invention, the first coating layer is formed by spraying or brushing.

[0014] In some embodiments of the present invention, the second solution for coating the second coating includes silicon nitride, silica sol and water, and the solution ratio of the second coating is: 500g-700g of silicon nitride, 300ml-500ml of silica sol, and 500ml-800ml of water.

[0015] According to the spraying method for the crucible of the ingot furnace according to the second aspect of the present invention, the crucible is the crucible of the ingot furnace according to the first aspect of the present invention, and the spraying method comprises: spraying a silicon nitride solution containing silica sol on the side wall of the crucible body to form the second coating; spraying a silicon nitride solution not containing silica sol on the bottom wall of the crucible body to form the first coating.

[0016] The method for spraying a crucible for an ingot casting furnace according to the second aspect of the present invention can prepare the crucible for the ingot casting furnace according to the first aspect of the present invention.

[0017] According to the third aspect of the present invention, the crucible is the crucible of the ingot furnace according to the first aspect of the present invention, and the crucible loading method comprises: laying a crushed material layer, a first block material layer and a powder material layer in sequence from the bottom to the top of the bottom wall of the crucible.

[0018] The method for loading the crucible of the ingot casting furnace according to the third aspect of the present invention can reduce the probability of contact between the high-temperature silicon liquid and the bottom wall of the crucible when using the crucible according to the first aspect of the present invention, thereby further reducing the probability of the bottom silicon ingot sticking to the pot and improving the yield rate of the silicon ingot.

[0019] In some embodiments of the present invention, a second block layer is laid on the upper side of the powder layer, and the second block layer at least covers the middle area of ​​the powder layer.

[0020] In some embodiments of the present invention, the scrap layer includes scraps and foam materials, the scraps have a size of 10 mm-30 mm, and the foam materials have a size of not less than 1 mm.

[0021] In some embodiments of the present invention, the height of the crushed material layer is 5-30 mm.

[0022] In some embodiments of the present invention, the first block material layer includes a plurality of regularly laid silicon block materials, and surfaces of two adjacent silicon block materials are bonded in a horizontal plane.

[0023] In some embodiments of the present invention, there is a gap between the first block layer and the side wall of the crucible, and the gap is 10 mm-30 mm.

[0024] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic diagram of a crucible of an ingot casting furnace according to an embodiment of the present invention;

[0026] Figure 2 is a schematic diagram of a method for charging a crucible according to an embodiment of the present invention after the crucible is charged;

[0027] Figure 3 is a flow chart of a method for spraying a crucible according to an embodiment of the present invention;

[0028] Figure 4 is a flow chart of a method for charging a crucible according to an embodiment of the present invention.

[0029] Reference numerals:

[0030] 100. Crucible;

[0031] 10. Crucible body;

[0032] 20. First coating;

[0033] 30. Second coating;

[0034] 40. Crushed material layer;

[0035] 50. The first material layer;

[0036] 60. Powder layer;

[0037] 70. The second layer of material. DETAILED DESCRIPTION

[0038] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0039] Reference below Figure 1 A crucible 100 for an ingot casting furnace according to an embodiment of the first aspect of the present invention will be described.

[0040] like Figure 1 As shown, the crucible 100 of the ingot casting furnace according to the first embodiment of the present invention includes: a crucible body 10, a first coating 20 and a second coating 30.

[0041] Specifically, the inner surface of the crucible body 10 includes a side wall and a bottom wall, the first coating 20 covers the bottom wall of the crucible body 10, and the first coating 20 is a silicon nitride coating without silica sol. The second coating 30 covers the side wall of the crucible body 10, and the second coating 30 includes silica sol and silicon nitride.

[0042] The silica sol can increase the adhesion between the second coating layer 30 and the side wall of the crucible body 10 , making the second coating layer 30 more firmly attached to the side wall of the crucible body 10 .

[0043] When the ingot furnace is working, the heating device heats the crucible 100 from the upper side of the crucible 100 and the outer side of the crucible 100 circumference, and the silicon material in the crucible 100 will gradually melt from the top and the side. Since the silicon material at the top is close to the heating device, the temperature of the silicon material at the top is higher after melting. Under the action of gravity, the high-temperature silicon liquid will flow along the side wall of the crucible 100 to the bottom of the crucible 100, or directly flow to the bottom of the crucible 100. The temperature of the bottom of the crucible 100 rises slowly. After the silicon liquid flows to the bottom of the crucible 100, it will solidify first and then melt into liquid after the temperature of the bottom of the crucible 100 rises. In this way, when the degree of infiltration of the silicon nitride coating and the silicon liquid is high, the silicon liquid is easy to destroy the silicon nitride coating when changing from liquid to solid to liquid, causing the finished silicon ingot at the bottom of the crucible 100 to stick to the pot.

[0044] When the high-temperature silicon liquid contacts the side wall of the crucible 100, the high-temperature silicon liquid will move downward along the side wall of the crucible 100 under the action of gravity. By adding silica sol to the second coating 30, the adhesion degree of the second coating 30 to the side wall of the crucible body 10 can be increased, thereby reducing the probability of the high-temperature silicon liquid impacting the second coating 30 and causing the second coating 30 to fall off.

[0045] When the high-temperature silicon liquid accumulates at the bottom of the crucible 100, the high-temperature silicon liquid contacts the first coating 20. At the same time, the high-temperature silicon liquid solidifies first and then melts. Since the first coating 20 does not contain silica sol, the degree of wetting between the silicon nitride coating and the high-temperature silicon liquid is low, the silicon nitride coating is not easily damaged, and the probability of the silicon ingot at the bottom of the crucible 100 sticking to the pot is low.

[0046] In addition, the silicon liquid at the bottom of the crucible 100 convects slowly, the impact of the high-temperature silicon liquid on the first coating 20 is small, and the probability of the first coating 20 falling off is low.

[0047] According to the crucible 100 of the embodiment of the first aspect of the present invention, by not adding silica sol to the first coating 20, the degree of wetting of the high-temperature silicon liquid and silicon nitride can be reduced, thereby reducing the probability of the silicon ingot sticking to the bottom of the crucible 100. By adding silica sol to the second coating 30, the probability of the high-temperature silicon liquid impacting the second coating 30 and causing the second coating 30 to fall off can be reduced, thereby improving the yield rate of the silicon ingots.

[0048] In some embodiments of the present invention, the first solution for coating the first coating 20 includes silicon nitride and water, and the mass ratio of silicon nitride to water in the first solution is (300-500): (400-600). For example, the mass ratio of silicon nitride to water can be 300:400, 400:500 or 500:600. When preparing the crucible 100, the first solution is coated on the bottom wall of the crucible body 10. When the water in the first solution evaporates, the first coating 20 is formed on the bottom wall of the crucible body 10.

[0049] In some embodiments of the present invention, the first coating 20 is formed by spraying or brushing. Spraying can improve production efficiency and reduce the labor intensity of operators, while brushing can make the first solution more accurately coated on the bottom wall of the crucible body 10, reducing the probability of the first solution being coated on the side wall of the crucible body 10.

[0050] In some embodiments of the present invention, the second solution for coating the second coating 30 includes silicon nitride, silica sol and water, and the solution ratio of the second coating 30 is: 500g-700g of silicon nitride, 300ml-500ml of silica sol, and 500ml-800ml of water. For example, the silicon nitride can be 500g, 600g or 700g, the silica sol can be 300ml, 400ml or 500ml, and the water can be 500ml, 700ml or 800ml. When preparing the crucible 100, the second solution is coated on the side wall of the crucible body 10. When the water in the second solution evaporates, the second coating 30 is formed on the side wall of the crucible body 10.

[0051] Reference below Figure 1 and Figure 3 A method for spraying a crucible 100 of an ingot casting furnace according to an embodiment of the second aspect of the present invention will be described.

[0052] According to the spraying method of the crucible 100 of the ingot casting furnace according to the second aspect of the present invention, the crucible 100 is the crucible 100 of the ingot casting furnace according to the first aspect of the present invention, such as Figure 1 and Figure 3 As shown, the spraying method includes: spraying a silicon nitride solution containing silica sol on the side wall of the crucible body 10 to form a second coating 30 ; spraying a silicon nitride solution without silica sol on the bottom wall of the crucible body 10 to form a first coating 20 .

[0053] When the crucible 100 is sprayed, a silicon nitride solution containing silica sol is first sprayed on the side wall of the crucible body 10, and then a silicon nitride solution without silica sol is sprayed on the bottom wall of the crucible body 10. Then, the water is waited for evaporation to form a second coating 30 on the side wall of the crucible body 10 and a first coating 20 on the bottom wall of the crucible body 10.

[0054] Among them, part of the silicon nitride solution containing silica sol may be scattered onto the bottom wall of the crucible body 10 when spraying on the side wall of the crucible body 10. When spraying, the side wall of the crucible body 10 is sprayed first and then the bottom wall of the crucible body 10. In this way, the silicon nitride solution that does not contain silica sol can cover the part of the silicon nitride solution containing silica sol scattered on the bottom wall of the crucible body 10, thereby reducing the probability of the first coating 20 falling off and sticking to the silicon ingot.

[0055] The method for spraying the crucible 100 of the ingot casting furnace according to the second embodiment of the present invention can prepare the crucible 100 according to the first embodiment of the present invention.

[0056] In some embodiments of the present invention, the parameters during spraying are set as: atomization pressure 0.18Mpa, spray width pressure 0.06Mpa, flow rate 70-85ml / 20s, thereby ensuring the efficiency of spraying and the thickness of the coating after spraying.

[0057] Reference below Figure 2 and Figure 4 A method for charging the crucible 100 of the ingot casting furnace according to the third embodiment of the present invention will be described.

[0058] According to the method for charging the crucible 100 of the ingot casting furnace of the third aspect of the present invention, the crucible 100 is the crucible 100 of the ingot casting furnace of the first aspect of the present invention, such as Figure 2 and Figure 4 As shown, the method for loading the crucible 100 includes: laying a crushed material layer 40 , a first block material layer 50 , and a powder material layer 60 in sequence from bottom to top on the bottom wall of the crucible 100 .

[0059] The particle size of the crushed material layer 40 is larger than that of the powder layer 60 , so that the contact area between the particles of the crushed material layer 40 is larger, making it more difficult for the particles of the crushed material layer 40 to move relative to each other, and the structure of the crushed material layer 40 is more stable.

[0060] When the ingot casting furnace is working, the heating device heats the crucible 100 from the upper side of the crucible 100 and the outer side of the crucible 100. The upper powder layer 60 will melt first, and the formed silicon liquid has a higher temperature. Since the powder layer 60 is relatively loose, the high-temperature silicon liquid will pass through the powder layer 60 and move toward the bottom wall of the crucible 100. When the high-temperature silicon liquid falls on the first block layer 50, the first block layer 50 will block the high-temperature silicon liquid from continuing to seep downward. Part of the high-temperature silicon liquid that continues to fall through the gap between the first block layer 50 or the gap between the first block layer 50 and the side wall of the crucible 100 will fall on the crushed material layer 40. The structure of the crushed material layer 40 is more stable, and the high-temperature silicon liquid is not easy to pass through the crushed material layer 40 to contact the bottom wall of the crucible 100. Therefore, the probability of the high-temperature silicon liquid contacting the bottom wall of the crucible 100 can be reduced.

[0061] The method for loading the crucible 100 of the ingot casting furnace according to the third aspect of the present invention can reduce the probability of contact between the high-temperature silicon liquid and the bottom wall of the crucible 100 when using the crucible 100 according to the first aspect of the present invention, thereby further reducing the probability of the silicon ingot at the bottom of the crucible 100 sticking to the pot and improving the yield rate of the silicon ingots.

[0062] In some embodiments of the present invention, Figure 2 As shown, a second material layer 70 is laid on the upper side of the powder layer 60, and the second material layer 70 covers at least the middle area of ​​the powder layer 60. In this way, the second material layer 70 can press the powder layer 60, thereby reducing the probability that the airflow in the crucible 100 will blow the powder layer 60 during the operation of the ingot casting furnace, thereby improving the reliability of the ingot casting furnace during operation.

[0063] In some embodiments of the present invention, the crushed material layer 40 includes crushed materials and foamed materials, the size of the crushed materials is 10mm-30mm, and the size of the foamed materials is not less than 1mm. For example, the size of the crushed materials can be 10mm, 20mm or 25mm, and the size of the foamed materials can be 1mm, 2mm or 3mm. In this way, the stability of the structure of the crushed material layer 40 can be ensured, thereby reducing the probability of high-temperature silicon liquid passing through the crushed material layer 40 and contacting the bottom wall of the crucible 100, further reducing the probability of the first coating 20 being damaged, and then reducing the probability of the silicon ingot at the bottom of the crucible 100 sticking to the pot, thereby improving the yield rate.

[0064] In some embodiments of the present invention, the height of the crushed material layer 40 is 5 mm to 30 mm. For example, the height of the crushed material layer 40 may be 5 mm, 10 mm or 25 mm, so that the crushed material layer 40 blocks the high-temperature silicon liquid from moving over a larger distance, thereby further reducing the probability of the high-temperature silicon liquid passing through the crushed material layer 40 and contacting the bottom wall of the crucible 100, further reducing the probability of the first coating 20 being damaged, and further reducing the probability of the silicon ingot at the bottom of the crucible 100 sticking to the pot, thereby improving the yield rate.

[0065] In some embodiments of the present invention, the first block material layer 50 includes a plurality of block silicon materials laid in a regular manner, and the surfaces of two adjacent block silicon materials in a horizontal plane are bonded. The block silicon material is easy to lay, which can improve the efficiency of laying. The surface bonding of the block silicon material can reduce the probability of high-temperature silicon liquid flowing from the gaps between the block silicon materials to the broken material layer 40, thereby reducing the probability of high-temperature silicon liquid contacting the bottom wall of the crucible 100, further reducing the probability of the first coating 20 being damaged, thereby reducing the probability of the silicon ingot at the bottom of the crucible 100 sticking to the pot, and improving the yield rate.

[0066] In some embodiments of the present invention, there is a gap between the first block material layer 50 and the side wall of the crucible 100, and the gap is 10mm-30mm. For example, the gap can be 10mm, 20mm or 25mm. The bulk silicon material will expand and increase in volume after heating. At the same time, the crucible 100 will soften when the temperature is too high. By providing a gap between the first block material layer 50 and the side wall of the crucible 100, the probability of the bulk silicon material increasing in volume and squeezing the crucible 100 to damage the crucible 100 during heating can be reduced, thereby reducing the probability of the crucible 100 being damaged and causing silicon liquid overflowing.

[0067] A specific embodiment of the preparation of the crucible 100 for the ingot casting furnace is described below.

[0068] Preferably, the mass of silicon nitride in the first solution is 500 g, the mass of water is 600 g, that is, the volume of water is 600 ml. The mass of silicon nitride in the second solution is 700 g, the mass of silica sol is 500 ml, and the mass of water is 600 ml.

[0069] First, the first solution and the second solution are prepared according to the above-mentioned ratio, and then the second solution is sprayed on the side wall of the crucible body 10, and then the first solution is sprayed on the bottom wall of the crucible body 10, wherein the atomization pressure during spraying is 0.18Mpa, the spray width pressure is 0.06Mpa, and the flow rate is 70-85ml / 20s. Then, wait for the water to evaporate, form the second coating 30 on the side wall of the crucible body 10, and form the first coating 20 on the bottom wall of the crucible body 10, thereby completing the preparation of the crucible 100 for the ingot casting furnace.

[0070] A specific embodiment of charging the crucible 100 of the ingot casting furnace is described below.

[0071] First, fragments and / or foam materials are laid on the bottom of the crucible 100 to form a fragment layer 40 at the bottom of the crucible 100, and the surface of the fragment layer 40 is flattened, and then a plurality of block silicon materials are regularly laid on the fragment layer 40 to form a first block layer 50, wherein, preferably, the size of the block silicon material is 157.15mm*157.15mm*25mm, the number of block silicon materials is 49 and they are laid 7*7, and the gap between the first block layer 50 and the side wall of the crucible 100 is 20mm, and then a powder layer 60 is laid on the first block layer 50, and then a second block layer 70 is laid on the powder layer 60, thereby completing the process of loading the crucible 100 of the ingot casting furnace.

[0072] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0073] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0074] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0075] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0076] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A crucible for an ingot casting furnace, characterized in that: include: A crucible body, the inner surface of the crucible body comprising a side wall and a bottom wall; a first coating layer, wherein the first coating layer covers the bottom wall of the crucible body, and the first coating layer is a silicon nitride coating layer that does not contain silica sol; A second coating layer covers the side wall of the crucible body, and the second coating layer includes silica sol and silicon nitride.

2. The crucible of the ingot casting furnace according to claim 1, characterized in that: The first solution for coating the first coating layer includes silicon nitride and water, and the mass ratio of silicon nitride to water in the first solution is (300-500):(400-600).

3. The crucible of the ingot casting furnace according to claim 1, characterized in that: The first coating layer is formed by spraying or brushing.

4. The crucible of the ingot casting furnace according to claim 1, characterized in that: The second solution for coating the second coating layer includes silicon nitride, silica sol and water. The solution ratio of the second coating layer is: 500g-700g of silicon nitride, 300ml-500ml of silica sol, and 500ml-800ml of water.

5. A method for spraying a crucible of an ingot casting furnace, characterized in that: The crucible is a crucible of an ingot casting furnace according to any one of claims 1 to 4, and the spraying method comprises: Spraying a silicon nitride solution containing silica sol on the side wall of the crucible body to form the second coating; A silicon nitride solution without silica sol is sprayed on the bottom wall of the crucible body to form the first coating.

6. A method for charging a crucible of an ingot casting furnace, characterized in that: The crucible is a crucible of an ingot casting furnace according to any one of claims 1 to 4, and the crucible loading method comprises: laying a crushed material layer, a first block material layer and a powder material layer in sequence from bottom to top from the bottom wall of the crucible.

7. The method for charging a crucible of an ingot casting furnace according to claim 6, characterized in that: A second block layer is laid on the upper side of the powder layer, and the second block layer at least covers the middle area of ​​the powder layer.

8. The method for charging a crucible of an ingot casting furnace according to claim 6, characterized in that: The scrap layer includes scraps and foam materials. The size of the scraps is 10 mm to 30 mm, and the size of the foam materials is not less than 1 mm.

9. The method for charging a crucible of an ingot casting furnace according to claim 6, characterized in that: The height of the crushed material layer is 5-30 mm.

10. The method for charging a crucible of an ingot casting furnace according to claim 6, characterized in that: The first block material layer includes a plurality of regularly laid block silicon materials, and surfaces of two adjacent block silicon materials are bonded in a horizontal plane.

11. The method for charging a crucible of an ingot casting furnace according to claim 6, characterized in that: There is a gap between the first material layer and the side wall of the crucible, and the gap is 10 mm-30 mm.

Citation Information

Patent Citations

  • Polycrystalline silicon crucible spraying method free of drying and silicon nitride coating

    CN103506263A