Particle correction device, particle corrector module and particle system

Abstract

The invention provides a particle correction device, a particle corrector module and a particle system, and relates to the technical field of particles. Wherein the particle correction device comprises M micro correctors and a signal line group, and M is an integer greater than or equal to 1. Each micro corrector comprises a through hole and a plurality of electrodes arranged on the peripheral side of the through hole. And each electrode is connected with one signal line in the signal line group, so that a certain voltage value can be respectively input to each electrode, and a correction electric field is generated in the corresponding through hole. The direction and the intensity of the correction electric field can be adjusted by adjusting the voltage value input to each electrode, so that the parameters such as the inclination angle, the offset and the astigmatism of the corresponding particle beam are adjusted for each particle beam, and the accuracy of the particle beam is adjusted. The first shielding layer is arranged on at least one surface of the area of the signal line group of the particle correction device, so that an interference electric field generated by the signal line group can be shielded, and crosstalk of the signal line group on the micro corrector is reduced.

Description

Particle Correction Devices, Particle Corrector Modules, and Particle Systems Technical Field

[0001] The present application relates to the field of particle technology, and in particular to a particle correction device, a particle corrector module and a particle system. Background Art

[0002] Nanoscale high-resolution microscopy or exposure systems often use charged particles as working particles. Compared to optical microscopy or exposure systems with resolutions of hundreds of nanometers, charged particle systems can use particles with wavelengths smaller than photons to achieve higher resolution. However, unlike optical systems, charged particle systems often cannot obtain a large light beam to cover a large area of ​​the sample. Instead, they use a particle beam spot with a diameter on the order of nanometers to scan and cover the sample. As a result, the throughput of the entire particle system is low. To improve the throughput of the particle system, a multi-particle beam system can be used. This particle system uses multiple particle beams working in parallel, which can greatly improve the throughput of the particle system.

[0003] In a multi-particle beam system, a single particle source can be used to emit particles, which are then separated into multiple beams by an array of pinholes. Alternatively, multiple particle sources can be used, with the particles emitted by each source separated into one or more beams by pinholes. In these multi-particle beam systems, an array of particle beam microrectifiers is required to precisely control the angle and position of each particle beam. However, the electric field generated by the signal lines that provide voltage signals to these microrectifiers can affect the particle beam, causing crosstalk.

[0004] Summary of the Invention

[0005] The present application provides a particle correction device, a particle corrector module and a particle system to reduce the crosstalk suffered by the micro-corrector of the particle corrector module and improve the accuracy of the particle beam of the particle system.

[0006] On the one hand, the present application provides a particle correction device, which includes a particle correction plate, the particle correction plate including M through holes, multiple electrodes, a signal line group and a first shielding layer, wherein a plurality of electrodes are provided on the periphery of each through hole, so that the through hole and the electrodes on its periphery form a micro-corrector, wherein M is an integer greater than or equal to 1. Specifically, the multiple electrodes can be provided on the inner wall of the through hole, or can be provided around the outside of the through hole. Each of the electrodes is connected to a signal line in the signal line group, so that a certain voltage value can be input to each of the electrodes to generate a corrective electric field in the corresponding through hole. By adjusting the voltage value input to each electrode, the direction and intensity of the corrective electric field can be adjusted, thereby adjusting the parameters such as the inclination angle, offset and astigmatism of the corresponding particle beam for each particle beam, and adjusting the accuracy of the particle beam. In this solution, the particle correction device has a large number of signal lines, so the interference electric field that may be generated is relatively strong, and the crosstalk that the micro-corrector may be subjected to is relatively obvious. Therefore, the above-mentioned first shielding layer is arranged at one or both ends of the signal line group along the central axis direction of the through hole, that is, the first shielding layer is arranged at the end of the signal line group facing the surface of the particle correction plate, which can shield the interference electric field generated by the signal line group to reduce the crosstalk of the signal line group on the micro-corrector, thereby improving the correction effect of the micro-corrector and the accuracy of the particle beam.

[0007] The above-mentioned particle correction device can specifically be a chip structure, a circuit board structure, or other structures that can be equipped with a micro-corrector and a signal line group, and this application does not impose any restrictions.

[0008] When providing the first shielding layer, it can be provided only at one end of the signal line group. Specifically, the first shielding layer can be located at the end of the signal line group that is closer to the electrode edge, where the electrode edge refers to the edge along the central axis of the through-hole. In other words, the first shielding layer can be provided at either the upward end of the signal line group or the downward end of the signal line group, where upward refers to the direction from which the particle beam enters, and downward refers to the direction from which the particle beam exits.

[0009] In another technical solution, the first shielding layer can be provided at both ends of the signal line group along the central axis of the through hole, thereby shielding the interference electric field generated by the signal line group from two directions and reducing the crosstalk to the micro-rectifier.

[0010] When setting up the above-mentioned particle correction device, a signal line can be connected to an electrode, so that each electrode can independently input the required voltage value, and the size of the voltage value in each electrode can be independently controlled according to demand to adjust the intensity and direction of the correction electric field in the micro-corrector, thereby improving the accuracy of the particle correction device for particle beam correction. This solution requires the layout of a large number of signal lines on the particle correction board. Therefore, the interference electric field generated by the signal line is also strong. The present application has a relatively important significance by providing a first shielding layer for shielding the interference electric field generated by the signal line group. It can reduce the crosstalk of the above-mentioned interference electric field on the micro-corrector, which is beneficial to improving the accuracy of the micro-corrector.

[0011] When the first shielding layer is specifically provided, the first shielding layer can be a metal layer, a sheet structure, or a mesh structure. In addition, the first shielding layer can be provided inside the particle correction plate or on the surface of the particle correction plate. This application does not impose any restrictions, and the structure of the first shielding layer can be designed according to needs.

[0012] To further enhance shielding against the interfering electric field generated by the signal line group, a second shielding layer can be provided on the side of the signal line group region of the particle correction device. The plane of the second shielding layer intersects the plane of the first shielding layer. Specifically, the plane of the second shielding layer can be perpendicular to the plane of the first shielding layer. The second shielding layer can be parallel to the extension direction of the signal line. In other words, shielding layers can be provided in all directions around the extended square as needed to enhance shielding against the interfering electric field of the signal line group.

[0013] When configuring the first and second shielding layers, two first and two second shielding layers can be provided around the signal line group of the particle corrector. Specifically, the two first and two second shielding layers are spaced apart from each other, and adjacent first and second shielding layers are connected to form a circumferentially sealed shielding tube. The signal line group is disposed within the shielding tube, which effectively shields the interfering electric field of the signal line group, thereby improving the correction effect of the microcorrector and enhancing the accuracy of the particle beam.

[0014] When the second shielding layer is specifically provided, the second shielding layer can be a metal layer, a sheet structure, or a mesh structure. This application does not impose any restrictions, and the structure of the first shielding layer can be designed according to the requirements.

[0015] In addition to setting up a shielding layer, a ground signal line can also be set in the signal line group to achieve a shielding effect. Specifically, the signal line group includes multiple signal lines, and at least the signal line located at the edge of the signal line group is a ground signal line. That is to say, the signal lines located at the edge of the signal line group are grounded to form a shielding structure. Specifically, the signal lines of one layer at the edge of the signal line group can be grounded to form a ground signal line. In this solution, the ground signal line occupies less space, which is conducive to improving the integration of the particle correction device. Alternatively, at least two layers of signal lines at the edge of the signal line group can be grounded to form a ground signal line to improve the shielding effect of the edge of the signal line group.

[0016] Interference electric fields may also exist between micro-correctors. Therefore, the present invention employs shielding walls around each micro-corrector, with the electrodes and through-holes of the micro-corrector located within these walls. This isolates the micro-correctors, preventing crosstalk and improving their corrective effectiveness.

[0017] When the above-mentioned shielding wall is specifically set, the symmetry axis of the shielding wall in the direction perpendicular to the central axis of the through hole can be overlapped with the symmetry axis of the arrangement of the multiple electrodes, so that the shielding wall will not break the symmetry formed by the electrodes of the original micro-corrector, and will not introduce additional aberrations to the particle beam, thereby ensuring the working effect of the particle corrector module. For example, in the direction perpendicular to the central axis of the through hole, the orthographic projection of the shielding wall is a circle, that is, the shielding wall is in a circular shape. Alternatively, when the micro-corrector includes X electrodes, the orthographic projection of the shielding wall of the micro-corrector in the direction perpendicular to the central axis of the through hole can be a regular X-gon, and each side of the regular X-gon is opposite to each electrode one by one, or each corner of the regular X-gon is opposite to each electrode one by one. In short, it is necessary to ensure that the shielding wall does not destroy the symmetry of the micro-corrector.

[0018] The height of the shielding wall along the central axis of the through-hole can also be greater than the height of the electrode along the central axis. Specifically, the shielding wall can include a main shielding portion and an auxiliary shielding portion along the central axis of the through-hole. The main shielding portion is opposite the electrode. It can be understood that the height of the main shielding portion along the central axis of the through-hole is equal to the height of the electrode along the central axis, and the two overlap. The auxiliary shielding portions can be located on either side of the main shielding portion along the central axis of the through-hole, thereby extending the shielding height of the shielding wall, improving the shielding effectiveness of the shielding wall, and further reducing crosstalk between micro-correctors.

[0019] On the second aspect, the present application also provides a particle corrector module, which includes a power supply, a fixing part and N particle corrector devices in any of the above technical solutions, wherein N is an integer greater than or equal to 1. The above-mentioned N particle corrector devices are stacked, and the through holes of the microcorrectors between any two adjacent particle corrector devices are coaxially arranged to form a group of microcorrectors for the same particle beam. The above-mentioned power supply is connected to the signal line group to provide a certain voltage value to the electrode. The above-mentioned particle corrector is fixed to the fixing part to form an integral example corrector module structure. In this solution, each microcorrector may be subject to less crosstalk, and the correction effect of the microcorrector group is better, which is conducive to improving the accuracy of the particle beam.

[0020] Thirdly, the present application also provides a particle system comprising a particle source, a collimating lens, a beam splitter, a focusing lens, and the above-mentioned particle corrector module, wherein the particle source, collimating lens, beam splitter, particle corrector module, and focusing lens are arranged in sequence to form the required particle beam. In this solution, the correction effect of the particle corrector module is better, so the particle system has higher precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] FIG1 is a schematic structural diagram of a particle system according to an embodiment of the present application;

[0022] FIG2a is a schematic diagram of a top view of a particle correction device according to an embodiment of the present application;

[0023] FIG2 b is another schematic top view of the particle correction device according to an embodiment of the present application;

[0024] FIG3 is a schematic diagram of a partial cross-sectional structure of a particle correction device according to an embodiment of the present application;

[0025] FIG4 is a schematic diagram of a partial cross-sectional structure of a particle corrector module without a first shielding layer;

[0026] FIG5 is a schematic diagram of another partial cross-sectional structure of a particle correction device according to an embodiment of the present application;

[0027] FIG6 is another partial top view schematic diagram of the particle correction device according to an embodiment of the present application;

[0028] FIG7 is a schematic diagram of a partial top view of a signal line group in an embodiment of the present application;

[0029] FIG8 is another partial top view schematic diagram of the structure of the signal line group in the embodiment of the present application;

[0030] FIG9 is another partial top view schematic diagram of the structure of the signal line group in an embodiment of the present application;

[0031] FIG10 is another partial top view schematic diagram of the structure of the signal line group in an embodiment of the present application;

[0032] FIG11 is another partial top view schematic diagram of the particle correction device according to an embodiment of the present application;

[0033] FIG12 is another partial cross-sectional structural schematic diagram of the particle correction device according to an embodiment of the present application;

[0034] FIG13 is a schematic diagram of a partial top view of a particle correction device without a shielding wall;

[0035] FIG14 is a partial cross-sectional view of a particle correction device without a shielding wall;

[0036] FIG15 is another partial top view schematic diagram of the particle correction device according to an embodiment of the present application;

[0037] Figure 16 is a schematic diagram of a partial cross-sectional structure of the particle correction device in an embodiment of the present application.

[0038] Description of reference numerals:

[0039] 01-sample; 1-particle source;

[0040] 2-collimating lens; 3-beam splitter plate;

[0041] 31-small hole; 4-particle corrector module;

[0042] 41-particle correction plate; 411-micro corrector;

[0043] 4111-through hole; 4112-electrode;

[0044] 4113-Center axis; 412-Signal line group;

[0045] 4121-Signal line; 4122-Ground signal line;

[0046] 5-focusing lens; 51-focusing unit;

[0047] 6-initial particle beam; 61-particle beam;

[0048] 7-first shielding layer; 8-second shielding layer;

[0049] 9-shielding wall; 91-main shielding part;

[0050] 92- Auxiliary shielding part. DETAILED DESCRIPTION

[0051] In order to facilitate understanding of the particle corrector module and particle system provided in the embodiments of the present application, the following first introduces its application scenarios. Due to the high resolution of the particle system, it is currently used in microscopic systems, detection systems or exposure systems to improve the accuracy of the above systems. Specifically, when the particle system is used in fields such as microscopic imaging, the wavelength of the particles is smaller than the wavelength of the light wave. Therefore, a microscopic imaging device (such as an electron microscope) using the particle system can provide a resolution better than an optical microscope and can observe more microscopic structures. In addition, when the particle system is used in fields such as quality inspection, for example, the inspection sample can be a semiconductor device, a mask, or other types of entities. The particle beam can perform high-precision inspection on the sample. When the particle system is applied to the exposure system, the structure to be processed can be exposed to improve the exposure accuracy, and it is helpful to simplify the exposure process. The above are only some of the application scenarios of the particle system. The particle system in the embodiments of the present application can be applied to any required scenario.

[0052] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0053] The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to be limiting of the present application. As used in the specification of the present application and the appended claims, the singular expressions "a", "an", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear contrary indication in the context. It should also be understood that in the following embodiments of the present application, "at least one", "one or more" refer to one, two or more. The term "and / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist; for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and subsequent associated objects are in an "or" relationship.

[0054] References to "one embodiment" or "some embodiments" in this specification mean that a particular feature, structure, or characteristic described in conjunction with that embodiment is included in one or more embodiments of the present application. Thus, phrases such as "in one embodiment," "in some embodiments," "in other embodiments," and "in yet other embodiments" appearing in various places in this specification do not necessarily refer to the same embodiment, but rather mean "one or more but not all embodiments," unless otherwise specifically emphasized. The terms "including," "comprising," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0055] FIG1 is a structural diagram of a particle system in an embodiment of the present application. As shown in FIG1 , the particle system includes a particle source 1, a collimating lens 2, a beam splitter plate 3, a particle corrector module 4, and a focusing lens 5 arranged in sequence. The particle source 1 is used to generate an initial particle beam 6; the collimating lens 2 is arranged adjacent to the particle source 1, and is used to collimate the initial particle beam 6 so that the initial particle beam 6 can be in a parallel or nearly parallel state when it reaches the beam splitter plate 3. The beam splitter plate 3 is located on the side of the collimating lens 2 away from the particle source 1. The beam splitter plate 3 includes a plurality of small holes 31. The plurality of small holes 31 can be arranged in an array or arbitrarily arranged according to needs, and are used to separate the parallel particle beam 61 to form a plurality of (four are shown in the figure) particle beams 61. The particle corrector module 4 is located on the side of the beam splitter plate 3 away from the collimating lens 2, and includes a plurality of micro-correctors 411. The plurality of micro-correctors 411 can be aligned with the plurality of particle beams 61. 1 one-to-one correspondence, so that the particle corrector module 4 can adjust the parameters such as the inclination angle, offset and astigmatism of each particle beam 61; or, it can also selectively correspond to the particle beam 61 according to needs, and this application does not impose any restrictions; the focusing lens 5 is located on the side of the particle corrector module 4 away from the beam splitter plate 3, and includes focusing units 51 corresponding to the above-mentioned multiple particle beams 61 one-to-one, and each focusing unit 51 is used to focus a single particle beam 61 to effectively focus the particle beam 61 on the sample 01, prevent the particle beams 61 from crossing each other, and avoid mutual influence between different particle beams 61; when the particle beam 61 is focused on the sample 01, the sample 01 can be imaged, detected or exposed with high precision.

[0056] In specific implementation, the collimating lens 2 can be an electric lens, a magnetic lens, or a combination of an electric lens and a magnetic lens. In specific applications, the type and structure of the collimating lens 2 are not limited in this application.

[0057] It should be noted that, to facilitate understanding of the technical solution of this application, the initial particle beam 6 described below refers to the unseparated collection of particles generated by particle source 1. Particle beam 61 refers to the collection of particles after the initial particle beam 6 has been separated. Particles refer to negative electrons. Of course, in actual applications, particles can also be other charged particles such as ions.

[0058] Figures 2a and 2b are two schematic top views of the particle corrector in the embodiment of the present application. In conjunction with Figures 1, 2a, and 2b, the particle corrector module 4 in the embodiment of the present application includes a power supply, a fixing member, and N stacked particle correctors. Each particle corrector includes a particle corrector plate 41. The particle corrector plate 41 includes M microcorrectors 411, a signal line group 412, and a first shielding layer 7, wherein N is an integer greater than or equal to 1, and M is also an integer greater than or equal to 1. In one embodiment, the value of M can also be understood as the number of particle beams 61 formed after passing through the particle corrector module 4; of course, in other embodiments, the value of M can be greater than the number of particle beams 61, or less than the number of particle beams 61. Each of the above-mentioned micro-correctors 411 includes a through hole 4111 and a plurality of electrodes 4112 arranged around the through hole 4111. When different voltage combinations are output to the above-mentioned electrodes 4112, the multiple electrodes 4112 can generate the required correction electric field in the corresponding through hole 4111, thereby adjusting the parameters such as the inclination angle, offset and astigmatism of the particle beam 61 passing through the above-mentioned through hole 4111. The above-mentioned N stacked correction devices are fixed to a fixed part to form an integral particle correction module structure, and the through holes of any adjacent particle correction devices are coaxially arranged one by one. Specifically, the above-mentioned multiple electrodes 4112 can be evenly distributed around a circumference coaxial with the through hole 4111. Each of the above-mentioned electrodes 4112 is connected to a signal line 4121 in the above-mentioned signal line group 412, and the above-mentioned power supply is connected to the signal line 4121 in the signal line group 412, so that a certain voltage value is input to the above-mentioned electrode 4112, so that multiple electrodes 4112 can accurately control parameters such as the direction and intensity of the electric field in each through hole 4111.

[0059] FIG3 is a schematic diagram of a partial cross-sectional structure of a particle correction device according to an embodiment of the present application. The curves in the figure represent the equipotential lines of the microcorrector 411, and the dashed line represents the central axis 4113 of the through hole 4111 of the microcorrector 411, which is also the optical axis of the microcorrector 411. The cross-section of FIG3 is parallel to the central axis 4113 of the through hole 4111. In conjunction with FIG1 to FIG3, the signal line group 412 can be located on the particle correction plate 41 to enable voltage input to the microcorrector 411. Specifically, the signal line group 412 can be located in the area between the microcorrectors 411. The first shielding layer 7 provided on the particle correction plate 41 is specifically located at one end of the signal line group 412 along the central axis 4113 of the through hole 4111, thereby reducing crosstalk between the electric field generated by the signal line group 412 on the side where the first shielding layer 7 is provided and the microcorrector 411, thereby shielding the interfering electric field generated by the signal line group. FIG4 is a schematic diagram of a partial cross-sectional structure of a particle correction device without a first shielding layer. Since the particle correction plate 41 of the particle corrector module 4 has a large number of signal lines 4121, the generated interference electric field will enter the through hole 4111 of the micro-corrector 411, causing crosstalk to the correction electric field in the micro-corrector 411. In the technical solution of the present application, by providing a first shielding layer 7 on one side of the region of the particle correction plate 41 having the signal line group 412, that is, providing a first shielding layer 7 on the side of the surface of the signal line group 412 facing the particle correction plate 41, the crosstalk generated by the above-mentioned signal line 4121 can be reduced, as shown in FIG4 , thereby reducing the disturbance of the particle beam 61 and improving the correction effect of the particle corrector module 4 and the accuracy of the particle beam 61.

[0060] It is worth noting that the aforementioned signal line group 412 refers to an assembly formed by a plurality of signal lines 4121 on the particle correction plate 41 of the particle corrector module 4, and is not necessarily a specific structure. A plurality of relatively dense signal lines 4121 on the particle correction plate 41 can be considered as a signal line group 412, or any adjacent signal lines 4121 can be considered as a signal line group 412, and this application does not impose any limitation. The technical solution of this application is intended to shield the crosstalk generated by the signal lines 4121 on the particle beam 61, thereby reducing the disturbance of the particle beam 61.

[0061] When specifically setting the above-mentioned first shielding layer 7, the first shielding layer 7 can be set only at one end of the region of the particle correction device 41 having the signal line group 412, as shown in FIG4 . In this solution, the first shielding layer 7 can be located on the side where the signal line group 412 is closer to the edge of the electrode 4112, where the edge of the electrode 4112 refers to the edge along the central axis 4113 of the through hole 4111, as shown in FIG4 . In other words, the above-mentioned first shielding layer 7 can be set on the side of the particle correction plate 41 close to the top, or on the side of the particle correction plate 41 close to the bottom. In any of the embodiments of the present application, the above mentioned refers to the direction from which the particle beam 61 enters, and the below refers to the direction from which the particle beam 61 exits.

[0062] FIG5 is a schematic diagram of another partial cross-sectional structure of the particle correction device in an embodiment of the present application. As shown in FIG5 , the first shielding layer 7 can also be provided at both ends of the signal line group 412 along the central axis 4113 of the through hole 4111. In other words, the first shielding layer 7 can be provided at both ends of the region of the particle correction plate 41 having the signal line group 412, and the signal line group 412 is located between the two layers of the first shielding layer 7. In this solution, the first shielding layer 7 can be provided on both the upper side and the lower side of the particle correction plate 41, thereby improving the shielding effect on the interference electric field of the signal line group 412.

[0063] When the above-mentioned electrodes are specifically set up, a signal line is connected to one electrode 4112, so that the voltage signal of each electrode 4112 can be independently controlled. By adjusting the voltage value input to each electrode 4112, the direction and intensity of the correction electric field of each micro-corrector 411 can be adjusted, so as to independently and accurately adjust the parameters of each particle beam 61.

[0064] In a specific embodiment, the particle correction plate 41 may be a chip structure, a circuit board structure, or other structures capable of providing a micro-corrector 411 and a signal line group 412, and this application does not impose any restrictions thereon. The signal line group may include a layer of signal lines 4121, or may include at least two layers of signal lines 4121. For example, when the particle correction plate 41 is a chip structure, the signal lines 4121 may be located inside the chip, or, when the particle correction plate 41 is a circuit board structure, the circuit board structure may be a multi-layer circuit board, and the signal lines 4121 may be provided inside the multi-layer circuit board, thereby reducing the area occupied by the signal lines 4121, so as to facilitate independent control of the voltage value of each electrode 4112.

[0065] When the electrode 4112 is specifically provided, the electrode 4112 is provided on the circumference of the through hole 4111, and can be provided on the inner wall of the through hole 4111 or on the outside of the through hole 4111, and this application does not limit this. In the embodiment shown in FIG2a, the electrode 4112 is provided on the inner wall of the through hole 4111, and in the embodiment shown in FIG2b, the electrode 4112 is provided on the outside of the through hole 4111.

[0066] When the above-mentioned first shielding layer 7 is specifically prepared, the first shielding layer 7 is a conductor layer, specifically a metal layer, so as to achieve the purpose of shielding. The above-mentioned first shielding layer 7 can be a sheet structure, or it can be a non-sheet structure, and a mesh shielding layer is formed by connecting lines. Specifically, it can be considered that the above-mentioned particle correction plate 41 is a multi-layer structure, including multi-layer routing, the middle part of the multi-layer routing is made into a signal line, and the layers at both ends are made into a metal sheet structure, thereby forming the above-mentioned first shielding layer. Of course, the layers at both ends can also be made into a metal mesh structure as the first shielding layer. For example, the particle correction plate includes six metal layers, which are the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the fifth metal layer and the sixth metal layer, wherein the above-mentioned first shielding layer 7 is prepared in the first metal layer and the sixth metal layer, and the above-mentioned signal line is prepared in the second metal layer, the third metal layer, the fourth metal layer and the fifth metal layer. The above-mentioned two ends refer to the two ends of the particle correction plate 41 close to the two surfaces. Alternatively, a first shielding layer may be fixedly provided on the surface of the particle correction plate 41, which is not limited in this application.

[0067] Figure 6 is another partial top view structural schematic diagram of the particle correction device in the embodiment of the present application. As shown in Figure 6, a second shielding layer 8 is further provided on the side of the area of ​​the signal line group 412 of the particle correction plate 41. The plane where the second shielding layer 8 is located intersects with the plane where the first shielding layer 7 is located. Specifically, the plane where the second shielding layer 8 is located and the plane where the first shielding layer 7 are located can be made perpendicular to each other. The plane where the first shielding layer 7 is located can be understood as the surface of the particle correction plate 41. Figure 7 is a partial top view structural schematic diagram of the signal line group in the embodiment of the present application. The cross-section of the signal line group 412 is perpendicular to the extension direction of the signal line 4121 of the signal line group 412. In the embodiment as shown in Figure 7, the signal line group 412 includes a first shielding layer 7 and a second shielding layer 8. The plane where the second shielding layer 8 is located intersects with the plane where the first shielding layer 7 is located. In a specific embodiment, the first shielding layer 7 and the second shielding layer 8 can be connected to form an integrated structure, or they can be not connected, or there can even be a certain gap, which is not limited by the present application.

[0068] When the above-mentioned second shielding layer 8 is specifically prepared, the first shielding layer 8 is a conductor layer, specifically a metal layer, so as to achieve the purpose of shielding. The above-mentioned second shielding layer 8 can be a sheet-like structure, or it can be a non-sheet-like structure, and a mesh shielding layer is formed by connecting wires. In a specific embodiment, it can be considered that the above-mentioned particle correction plate 41 is a multi-layer structure, including multiple layers of wiring, each layer of wiring has a shielding wire on the side of the signal line group, and then the above-mentioned shielding wires of each layer are connected through conductive through-holes to form a mesh second shielding layer. Alternatively, a second shielding layer 8 of a sheet-like structure can also be made on the particle correction plate 41, for example, through-holes are prepared on the particle correction plate 41 to form the above-mentioned second shielding layer 8 of the sheet-like structure. Alternatively, the second shielding layer can also be fixedly set on the particle correction plate 41.

[0069] FIG8 is another partial top view schematic diagram of the signal line group in the embodiment of the present application, in which the cross section of the signal line group 412 is also perpendicular to the extension direction of the signal line 4121 of the signal line group 412. As shown in FIG8 , the particle correction plate 41 is provided with two first shielding layers 7 and two second shielding layers 8, and the first shielding layers 7 and the second shielding layers 8 are sequentially connected to form a shielding tube. In this solution, the adjacent first shielding layers 7 and the second shielding layers 8 are sealed and connected to form a shielding tube with a closed side. The signal line group 412 is located in the shielding tube, so that the interference electric field generated by the signal line group 412 can be shielded to a greater extent, thereby improving the correction effect of the micro-corrector 411 and improving the accuracy of the particle beam 61.

[0070] Figures 9 and 10 are two other partial top views of the signal line group in the embodiment of the present application. The cross-section of the signal line group 412 is also perpendicular to the extension direction of the signal lines 4121 of the signal line group 412. The signal line group 412 includes multiple signal lines 4121, and at least the signal lines 4121 located at the edge of the signal line group 412 are grounded signal lines 4122. In other words, the signal lines 4121 at the edge of the signal line group 412 are grounded to form the grounded signal lines 4122, thereby forming a shielding structure that can shield the signal.

[0071] In one embodiment, as shown in FIG9 , only the outermost layer of signal lines 4121 located at the edge of the signal line group 412 can be used as ground signal lines 4122 to reduce the space occupied by the ground signal lines 4122 and improve the integration of the particle corrector module 4. In another embodiment, as shown in FIG10 , at least two layers of signal lines 4121 located at the edge of the signal line group 412 can be used as ground signal lines 4122 to increase the effective shielding width and thereby improve the shielding effect of the ground signal lines 4122.

[0072] Of course, in a specific embodiment, only the second shielding layer 8 or only the ground signal line 4122 may be provided, or both the second shielding layer 8 and the ground signal line 4122 may be provided to improve the shielding effect, which is not limited in this application.

[0073] Figure 11 is another partial top view of the particle correction device according to an embodiment of the present application. Figure 12 is another partial cross-sectional view of the particle correction device according to an embodiment of the present application. The cross section of Figure 12 is parallel to the central axis 4113 of the through hole 4111. The figure uses the example of each microcorrector 411 including eight electrodes 4112. In practice, the number and shape of electrodes 4112 in each microcorrector 411 are not limited. The curved lines in the figure represent the equipotential lines of the microcorrector 411, and the dotted line represents the central axis 4113 of the through hole 4111 of the microcorrector 411, which is also the optical axis of the microcorrector 411.

[0074] As shown in Figures 11 and 12 , each micro-rectifier 411 in the particle corrector module 4 of the present embodiment is surrounded by a shielding wall 9. The electrodes 4112 and through-holes 4111 of the micro-rectifier 411 are located within the shielding wall 9. As shown in Figures 11 and 12 , the shielding wall 9 is a "walled" and sealed structure. In this solution, the shielding wall 9 shields the corrective electric field of the micro-rectifier 411, preventing crosstalk between different micro-rectifiers 411 and improving the accuracy of the particle beam 61.

[0075] Figure 13 is a schematic diagram of a partial top view of a particle correction device without a shielding wall, and Figure 14 is a schematic diagram of a partial cross-sectional view of a particle correction device without a shielding wall. The cross-section of Figure 14 is parallel to the central axis 4113 of the through-hole 4111. As shown in Figure 13, the equipotential lines of the corrective electric field of a microcorrector 411 can enter other surrounding microcorrectors 411 through the gaps between the electrodes 4112, causing crosstalk. As shown in Figure 14, the equipotential lines of the corrective electric field of a microcorrector 411 can enter other surrounding microcorrectors 411 through the gaps between the electrodes 4112, causing crosstalk. By setting the above-mentioned shielding wall 9, the equipotential lines of the correction electric field of the micro-corrector 411 are shielded within the range of its own micro-corrector 411 and are not easy to enter other micro-correctors 411, as shown in Figures 11 and 12. Therefore, the technical solution of the present application can better prevent the correction electric fields between different micro-correctors 411 from forming mutual crosstalk, thereby improving the accuracy of the particle beam 61.

[0076] When configuring the shielding wall 9, the distance between the shielding wall 9 and the electrode 4112 should be minimal, and can be less than or equal to 10 μm. A smaller distance between the shielding wall 9 and the electrode 4112 improves the shielding effect of the shielding wall 9 and reduces the space occupied by the micro-orthotic 411 and the shielding wall 9, increasing the spatial ratio of the signal line group 412 between the micro-orthotic 411 to facilitate the installation of the signal line 4121 connected to the electrode 4112, thereby facilitating the individual control of each electrode 4112.

[0077] The shape enclosed by the shielding wall 9 is not limited. FIG15 is a schematic diagram of another partial top view of the structure of the particle correction device in an embodiment of the present application. Referring to FIG11 and FIG15 , the orthographic projection of the shielding wall 9 in a direction perpendicular to the central axis 4113 of the through-hole 4111 can be a circle or a regular X-gon. In other words, the shape enclosed by the shielding wall 9 can be a circle or a regular X-gon, where X is an integer greater than or equal to 3. The shape enclosed by the shielding wall 9 shown in FIG11 is a circle, while the shape enclosed by the shielding wall 9 shown in FIG15 is a regular X-gon. As shown in FIG15 , when the orthographic projection of the shielding wall 9 is a regular X-gon, the axis of symmetry of the shielding wall 9 overlaps the axis of symmetry of the arrangement of the X electrodes 4112. In FIG15 , the microcorrector 411 includes X electrodes 4112, each of which is opposite the shielding wall 9 along each side of the regular X-gon, with the electrodes 4112 located in the middle of the corresponding side. Alternatively, the electrodes can be located at the corners of the deformed positive edges, a feature not limited in this application. Regardless of whether the shielding wall 9 is circular or rectangular, the axis of symmetry of the shielding wall 9 overlaps the axis of symmetry of the arrangement of the X electrodes 4112. In this solution, the shielding wall 9, with its orthographic projection being a circle or a regular X-gon, does not disrupt the symmetry originally formed by the electrodes 4112 of the micro-corrector 411, thereby preventing the introduction of additional aberrations into the particle beam 61 and maintaining the effectiveness of the particle corrector module 4.

[0078] In a specific embodiment, the micro-orthotic device 411 may further include two electrodes 4112. When the micro-orthotic device 411 includes two electrodes, the shielding wall may be formed into a circular or regular quadrilateral shape. Alternatively, the shielding wall may be provided only outside the two electrodes 4112, that is, the shielding wall does not form a closed shape. The axis of symmetry of the orthographic projection of the shielding wall 9 may also overlap with the axis of symmetry of the arrangement of the electrodes 4112 of the micro-orthotic device 411, to ensure that the shielding wall 9 does not introduce additional aberrations into the particle beam 61.

[0079] Figure 16 is a partial cross-sectional view of a particle correction device according to an embodiment of the present application. The cross section of Figure 16 is parallel to the central axis 4113 of the through-hole 4111. As shown in Figure 16 , the shielding wall 9 includes a main shielding portion 91 opposing the electrode 4112 and auxiliary shielding portions 92 located on either side of the main shielding portion 91 along the central axis 4113 of the through-hole 4111. As shown in Figure 16 , the height of the shielding wall 9 along the central axis 4113 of the through-hole 4111 is greater than the height of the electrode 4112 along the central axis 4113 of the through-hole 4111. Furthermore, the electrode 4112 is completely within the shielding wall 9. In other words, the electrode 4112 overlaps the main shielding portion 91 along the central axis 4113 of the through-hole 4111. In this embodiment, the height of the shielding wall 9 is relatively high, resulting in a better shielding effect. Of course, in other embodiments, as shown in Figure 12, the height of the shielding wall 9 along the direction of the central axis 4113 of the above-mentioned through hole 4111 can be equal to the height of the electrode 4112 along the direction of the central axis 4113 of the above-mentioned through hole 4111, and the electrode 4112 is completely located in the shielding wall 9, that is, along the direction of the central axis 4113 of the above-mentioned through hole 4111, the electrode 4112 overlaps with the shielding wall 9.

[0080] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A particle correction device, characterized in that: The invention comprises a particle correction plate, wherein the particle correction plate comprises M through holes, a plurality of electrodes, a signal line group and a first shielding layer, wherein: A plurality of electrodes are provided around each of the through holes, each of the electrodes is connected to a signal line in the signal line group, and the plurality of electrodes are used to generate a corrective electric field in the corresponding through hole; The first shielding layer is located at one end or both ends of the signal line group along the central axis of the through hole, and is used to shield the interference electric field generated by the signal line group; Wherein, M is an integer greater than or equal to 1.

2. The particle correction device according to claim 1, characterized in that One of the signal lines is connected to one of the electrodes.

3. The particle correction device according to claim 1 or 2, characterized in that: The first shielding layer is located inside or on the surface of the particle correction plate.

4. The particle correction device according to any one of claims 1 to 3, characterized in that: A second shielding layer is further provided in the region of the signal line group of the particle correction plate, and the plane where the second shielding layer is located intersects with the plane where the first shielding layer is located.

5. The particle correction device according to claim 4, characterized in that: Two first shielding layers and two second shielding layers are arranged around each signal line group of the particle correction device. The first shielding layers and the second shielding layers are sequentially connected at intervals to form a shielding tube, and the signal line group is located inside the shielding tube.

6. The particle correction device according to claim 4 or 5, characterized in that: The second shielding layer is a mesh-shaped second shielding layer.

7. The particle correction device according to any one of claims 1 to 6, characterized in that: The signal line group includes a plurality of signal lines, and at least the signal lines located at the edge of the signal line group are ground signal lines.

8. The particle correction device according to any one of claims 1 to 7, characterized in that: A shielding wall is provided around each through hole, and the electrode is located inside the shielding wall.

9. The particle correction device according to claim 8, characterized in that In the direction perpendicular to the central axis of the through hole, the orthographic projection of the shielding wall is a circle or a regular X-gon. When the orthographic projection of the shielding wall is the regular X-gon, the symmetry axis of the shielding wall overlaps with the arrangement symmetry axis of the multiple electrodes on the circumferential side of the through hole, where X is an integer greater than or equal to 2.

10. The particle correction device according to claim 8 or 9, characterized in that: The shielding wall includes a main shielding portion opposite to the electrode, and auxiliary shielding portions located on both sides of the main shielding portion along a central axis direction of the through hole.

11. A particle corrector module, characterized in that: It comprises a power supply, a fixing part and N particle correction devices according to any one of claims 1 to 10, wherein the N particle correction devices are stacked and fixed on the fixing part, the power supply is connected to the signal line group, and the through holes of any adjacent particle correction devices are coaxially arranged one by one, wherein N is an integer greater than or equal to 1.

12. A particle system, characterized in that: It comprises a particle source, a collimating lens, a beam splitter plate, a focusing lens and the particle corrector module according to claim 11, and the particle source, the collimating lens, the beam splitter plate, the particle corrector module and the focusing lens are arranged in sequence.

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