Epitaxial structure of vertical cavity surface emitting laser and method for checking the same

Abstract

The application provides an epitaxial structure of a vertical cavity surface emitting laser and a checking method thereof, the checking method is used for epitaxial checking of the epitaxial structure of the vertical cavity surface emitting laser of the GaAs substrate with the AlGaAs material with the mole fraction of Al greater than 60% as a buffer layer, in-situ monitoring of epitaxial growth of the AlGaAs buffer layer is performed when the epitaxial checking is performed, thereby reducing the number of trial production and improving the epitaxial checking efficiency, in addition, the AlGaAs buffer layer with the mole fraction of Al greater than 60% is grown on the GaAs substrate by using an epitaxial process, and the AlGaAs material with the mole fraction of Al greater than 60% is deposited on the inner wall of the epitaxial process chamber as an inner wall protection layer during the epitaxial process, so as to reduce or even avoid the impurity particles in the epitaxial process chamber from falling on the surface of the epitaxially grown film layer to form defects during epitaxial growth, and the furnace time for depositing the inner wall protection layer on the inner wall of the epitaxial process chamber can be removed, and the epitaxial checking efficiency is further improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor lasers, and in particular to an epitaxial structure of a vertical cavity surface-emitting laser and its verification method. Background Technology

[0002] A vertical-cavity surface-emitting laser (VCSEL) has a resonant cavity formed by a Bragg mirror, which allows the laser to be emitted along the epitaxial direction of the material, i.e., perpendicular to the substrate direction. Due to its advantages such as high beam quality, single-mode lasing, low threshold current density, on-chip testing, and ease of integration into two-dimensional arrays, it is widely used in fields such as optical interconnects, optical communications, facial recognition, and lidar.

[0003] To improve the film quality and yield of vertical-cavity surface-emitting laser (VCSEL) epitaxial structures, it is necessary to perform calibration. After maintenance affecting growth results, such as replacing epitaxial chamber components, the epitaxial chamber is baked at high temperature. Then, a highly adhesive material is deposited on the inner wall of the chamber as a protective layer. This reduces or even prevents impurities from falling onto the epitaxial film surface and forming defects that could affect CCSEL performance. After depositing the protective layer, trial production of the CCSEL epitaxial structure is conducted. Growth parameters are adjusted based on the trial growth results until they meet the preset requirements, at which point continuous production of the CCSEL epitaxial structure begins.

[0004] The conventional epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL) in the prior art, from bottom to top, includes: a GaAs substrate, a GaAs buffer layer, an N-type AlGaAs Bragg mirror layer, an InGaAs quantum well active region layer, an AlGaAs oxide confinement region layer, and a P-type AlGaAs Bragg mirror layer. When using this epitaxial structure for epitaxial verification, the GaAs buffer layer, being made of the same material as the GaAs substrate, has no refractive index difference. Therefore, it is impossible to obtain changes in the growth state in real time through in-situ monitoring methods, which affects the performance of the VCSEL epitaxial structure, thereby increasing the number of trial productions and affecting the efficiency of epitaxial verification. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an epitaxial structure of a vertical cavity surface-emitting laser and its verification method, which solves the problem that when using conventional epitaxial structures in the prior art for epitaxial verification, the performance of the epitaxial structure of the vertical cavity surface-emitting laser is affected by the need to deposit a protective layer on the inner wall of the epitaxial process chamber and the inability to perform in-situ monitoring of the epitaxially grown GaAs buffer layer, thereby increasing the number of trial productions and affecting the efficiency of epitaxial verification.

[0006] To achieve the above and other related objectives, the present invention provides an epitaxial structure for a vertical-cavity surface-emitting laser (VCSEL). The epitaxial structure of the VCSEL, from bottom to top, comprises: a GaAs substrate, an AlGaAs buffer layer, an N-type AlGaAs Bragg mirror layer, an InGaAs quantum well active region layer, an AlGaAs oxide confinement layer, and a P-type AlGaAs Bragg mirror layer. The AlGaAs buffer layer is composed of Al... x Ga (1-x) As, of which 0.6 <x<1。

[0007] Optionally, the epitaxial structure of the vertical cavity surface-emitting laser further includes a GaAs ohmic contact layer located above the P-type AlGaAs Bragg mirror layer.

[0008] Optionally, the thickness of the AlGaAs buffer layer is 100nm to 1000nm.

[0009] Optionally, the InGaAs quantum well active region layer contains 3 to 6 quantum wells, and the N-type AlGaAs Bragg mirror layer has 42 pairs of Bragg mirrors.

[0010] The present invention also provides a method for verifying the epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL), wherein the epitaxial verification is performed using the epitaxial structure of the VCSEL as described in any of the above claims, and the verification method includes the following steps:

[0011] S1. Conduct trial production of the vertical cavity surface-emitting laser epitaxial structure. First, the AlGaAs buffer layer is grown on the GaAs substrate using an epitaxial process. At the same time, AlGaAs material forming the AlGaAs buffer layer is deposited on the inner wall of the epitaxial process chamber as an inner wall protection layer during the epitaxial process. The growth parameters of the AlGaAs buffer layer are monitored.

[0012] S2. Continue the trial production to continue the epitaxial growth of the remaining film layers of the vertical cavity surface-emitting laser epitaxial structure above the AlGaAs buffer layer, and monitor the trial growth parameters of the remaining film layers;

[0013] S3. Determine whether the trial production result meets the preset requirements; if the preset requirements are not met, adjust the trial production parameters according to the trial production result, and continue to perform steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements.

[0014] S4. If the trial production results meet the preset requirements, proceed with the formal continuous production of the vertical cavity surface-emitting laser epitaxial structure.

[0015] Optionally, before the trial production of the vertical cavity surface-emitting laser epitaxial structure, the process may include equipment maintenance and baking of the epitaxial process chamber.

[0016] Optionally, the method for monitoring the growth state of the AlGaAs buffer layer is in-situ monitoring using EpiTT technology.

[0017] Optionally, the test growth parameters include film thickness, growth rate, molar composition, and surface morphology.

[0018] Optionally, during the formal continuous production of the vertical cavity surface-emitting laser epitaxial structure, the process further includes determining whether the formal continuous production result meets the preset requirements. If the preset requirements are not met, steps S1 to S4 are repeated.

[0019] Optionally, the number of trial production runs is 1 to 2.

[0020] As described above, the epitaxial structure and verification method of the vertical-cavity surface-emitting laser of the present invention have the following beneficial effects: This verification method uses an epitaxial structure of a vertical-cavity surface-emitting laser with an AlGaAs buffer layer containing an Al molar fraction greater than 60% for epitaxial verification. This makes the AlGaAs buffer layer different from the GaAs substrate material, thus allowing for in-situ monitoring of the epitaxial growth of the AlGaAs buffer layer during epitaxial verification. This enables timely adjustment of trial growth parameters during the epitaxial process, thereby reducing the number of trial productions and improving epitaxial verification efficiency. Furthermore, through… An AlGaAs buffer layer with an Al molar fraction greater than 60% is grown on a GaAs substrate using an epitaxial process. Simultaneously, an AlGaAs material with an Al molar fraction greater than 60% is deposited on the inner wall of the epitaxial process chamber as an inner wall protective layer during the epitaxial growth process. This reduces or even avoids impurity particles falling from the epitaxial process chamber onto the surface of the epitaxially grown film during epitaxial growth, thus preventing defects that could affect the performance of the vertical cavity surface emission laser epitaxial structure. It also eliminates the need for separate furnace cycles that deposit the inner wall protective layer on the inner wall of the epitaxial process chamber, further improving the epitaxial verification efficiency. Attached Figure Description

[0021] Figure 1 The diagram shown is a cross-sectional schematic of the epitaxial structure of the vertical cavity surface-emitting laser of the present invention.

[0022] Figure 2 The diagram shows a flowchart illustrating the verification method for the epitaxial structure of a vertical cavity surface-emitting laser according to the present invention.

[0023] Component designation explanation

[0024] 10 GaAs substrate

[0025] 11 AlGaAs buffer layer

[0026] 12 N-type AlGaAs Bragg mirror layer

[0027] 13 InGaAs quantum well active region layer

[0028] 14 AlGaAs Oxidation Confinement Layer

[0029] 15 P-type AlGaAs Bragg mirror layer

[0030] 16 GaAs Ohmic Contact Layer

[0031] Steps S1 to S4 Detailed Implementation

[0032] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] Please see Figures 1 to 2 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0034] This embodiment provides an epitaxial structure for a vertical cavity surface-emitting laser, such as... Figure 1 As shown, the epitaxial structure of the vertical-cavity surface-emitting laser, from bottom to top, includes: a GaAs substrate 10, an AlGaAs buffer layer 11, an N-type AlGaAs Bragg mirror layer 12, an InGaAs quantum well active region layer 13, an AlGaAs oxide confinement layer 14, and a P-type AlGaAs Bragg mirror layer 15, wherein the material composition of the AlGaAs buffer layer 11 is Alx Ga (1-x) As, where 0.6 < x < 1.

[0035] In the epitaxial structure of the vertical cavity surface emitting laser in this embodiment, by using AlGaAs as the buffer layer, it is different from the GaAs substrate material. Therefore, in-situ monitoring can be carried out during the epitaxial growth of the AlGaAs buffer layer to obtain a high-quality buffer layer film, thereby improving the performance of the epitaxial structure of the vertical cavity surface emitting laser. In addition, the epitaxial structure of the vertical cavity surface emitting laser in this embodiment can be used for epitaxial verification. During the epitaxial verification, in-situ monitoring can be carried out on the epitaxial growth of the AlGaAs buffer layer, so that the trial growth parameters can be adjusted in time during the epitaxial process, thereby reducing the number of trial productions and improving the verification efficiency. And by growing an AlGaAs buffer layer with a molar fraction of Al greater than 60% on the GaAs substrate using an epitaxial process, and at the same time depositing an AlGaAs material with a molar fraction of Al greater than 60% on the inner wall of the epitaxial process chamber as an inner wall protection layer during this epitaxial process, this is used to reduce or even avoid the impurity particles inside the epitaxial process chamber from falling on the surface of the epitaxial growth film layer to form defects during epitaxial growth, thereby affecting the performance of the epitaxial structure of the vertical cavity surface emitting laser. At the same time, the furnace run for separately depositing the inner wall protection layer on the inner wall of the epitaxial process chamber can also be removed, further improving the verification efficiency.

[0036] It should be noted that the material composition of the AlGaAs buffer layer 11 is Al x Ga (1-x) As, where 0.6 < x < 1, that is, in the AlGaAs buffer layer 11, the molar fraction of Al is x, and the molar fraction of Ga is 1 - x. Here, it can be expressed that the molar fraction of Al in the AlGaAs buffer layer 11 is greater than 60%.

[0037] As an example, the epitaxial structure of the vertical cavity surface emitting laser further includes a GaAs ohmic contact layer 16 located above the P-type AlGaAs Bragg reflector layer 15. The thickness of the GaAs ohmic contact layer 16 can be 50 nm to 2000 nm. The GaAs ohmic contact layer 16 can form the top electrode of the epitaxial structure of the vertical cavity surface emitting laser, thereby driving the vertical cavity surface emitting laser to work. The GaAs ohmic contact layer 16 not only helps to improve the electrical injection efficiency of the vertical cavity surface emitting laser, but also can reduce the contact resistance, thereby reducing power loss.

[0038] The thickness of the AlGaAs buffer layer 11 can be adjusted according to the performance specifications of the target device. For example, the thickness of the AlGaAs buffer layer 11 can be set to 100nm to 1000nm to reduce the stress caused by the mismatch of lattice constants between the GaAs substrate 10 and the N-type AlGaAs Bragg mirror layer 12. The AlGaAs buffer layer provides a smooth starting surface, which is beneficial to the uniform growth of subsequent epitaxial layers and maintains the film quality of the N-type AlGaAs Bragg mirror layer 12 epitaxial layer.

[0039] The number of pairs, material composition, and emission wavelength of the N-type AlGaAs Bragg mirror layer 12 and the P-type AlGaAs Bragg mirror layer 15 can be adjusted according to the performance specifications of the target device. As a specific example, the N-type AlGaAs Bragg mirror layer 12 has 42 pairs of Al materials. 0.9 Ga 0.1 As or Al 0.06 Ga 0.94 The N-type AlGaAs Bragg reflector has a Bragg center wavelength of 940 nm; the P-type AlGaAs Bragg reflector layer 15 consists of 20 pairs of Al-based materials. 0.9 Ga 0.1 As or Al 0.06 Ga 0.94 The P-type AlGaAs Bragg reflector has a Bragg center wavelength of 940 nm.

[0040] The material composition of the AlGaAs oxide confinement layer 14 can also be adjusted according to the performance specifications of the target device. As a specific example, the material composition of the AlGaAs oxide confinement layer 14 is Al 0.98 Ga 0.02 As.

[0041] As an example, the InGaAs quantum well active region layer 13 includes 3 to 6 InGaAs quantum wells, and the room temperature emission wavelength of the InGaAs quantum wells is 920 nm.

[0042] An AlGaAs material with a molar Al content greater than 60% is deposited on the inner wall of the epitaxial process chamber as an inner wall protective layer. The AlGaAs material with a higher molar Al content has a strong adhesion ability to impurity particles in the epitaxial process chamber and can be deposited on the inner wall of the epitaxial process chamber, reducing or even avoiding the falling of impurity particles onto the surface of the epitaxially grown film layer and forming defects, thereby affecting the performance of the vertical cavity surface emission laser epitaxial structure.

[0043] As described in the background section, existing verification methods for vertical-cavity surface-emitting laser (VCSEL) epitaxial structures require the deposition of an inner wall protective layer on the inner wall of the epitaxial process chamber before pilot production, i.e., before epitaxially growing a GaAs buffer layer on a GaAs substrate. This is to reduce or even prevent impurity particles from falling onto the surface of the epitaxially grown film and forming defects. Furthermore, because the GaAs buffer layer is made of the same material as the GaAs substrate and has no refractive index difference, it is impossible to obtain changes in the growth state in real time through in-situ monitoring. This affects the performance of the VCSEL epitaxial structure, increases the number of pilot production runs, and reduces epitaxial verification efficiency.

[0044] In this embodiment, one epitaxial growth cycle is referred to as one furnace cycle. All furnace cycles in the entire epitaxial verification process, namely, the deposition of the inner wall protective layer, the trial production, and the formal continuous production, are referred to as one furnace period. Taking a total of 20 furnace cycles as an example, the deposition of the inner wall protective layer requires at least one furnace cycle. Since the GaAs buffer layer is made of the same material as the GaAs substrate and has no refractive index difference, it is impossible to obtain the growth state changes in real time through in-situ monitoring. The trial production requires at least 2 to 3 furnace cycles. Therefore, at least 3 to 4 furnace cycles are required before the formal continuous production, accounting for at least 15% to 20% of the entire furnace period, which affects the epitaxial verification efficiency.

[0045] Based on this, this embodiment also provides a method for verifying the epitaxial structure of a vertical-cavity surface-emitting laser, such as... Figure 1 and Figure 2 As shown, epitaxial verification is performed using the epitaxial structure of a vertical-cavity surface-emitting laser as described above, and the verification method is as follows. Figure 2 As shown, it includes the following steps:

[0046] S1. Conduct trial production of the vertical cavity surface-emitting laser epitaxial structure. First, the AlGaAs buffer layer 11 is grown on the GaAs substrate 10 using an epitaxial process. At the same time, during the epitaxial process, AlGaAs material forming the AlGaAs buffer layer 11 is deposited on the inner wall of the epitaxial process chamber as an inner wall protective layer, and the growth parameters of the AlGaAs buffer layer 11 are monitored.

[0047] S2. Continue the trial production to continue the epitaxial growth of the remaining film layers of the vertical cavity surface-emitting laser epitaxial structure above the AlGaAs buffer layer 11, and monitor the trial growth parameters of the remaining film layers.

[0048] S3. Determine whether the trial production result meets the preset requirements; if the preset requirements are not met, adjust the trial production parameters according to the trial production result, and continue to perform steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements.

[0049] S4. If the trial production results meet the preset requirements, proceed with the formal continuous production of the vertical cavity surface-emitting laser epitaxial structure.

[0050] The verification method for the vertical-cavity surface-emitting laser (VCSEL) epitaxial structure in this embodiment uses an AlGaAs buffer layer as the verification structure. This makes the AlGaAs buffer layer different from the GaAs substrate material, allowing for in-situ monitoring of the AlGaAs buffer layer's epitaxial growth during verification, reducing the number of trial production runs and improving verification efficiency. Furthermore, by growing an AlGaAs buffer layer with an Al molar fraction greater than 60% on the GaAs substrate using an epitaxial process, and simultaneously depositing an AlGaAs material with an Al molar fraction greater than 60% on the inner wall of the epitaxial process chamber as an inner wall protective layer during this process, the method reduces or even prevents impurity particles from falling onto the surface of the epitaxially grown film during epitaxial growth, thus reducing or even eliminating defects that could affect the performance of the VCSEL epitaxial structure. Additionally, it eliminates the need for separate furnace runs that deposit the inner wall protective layer on the inner wall of the epitaxial process chamber, further improving the efficiency of epitaxial verification.

[0051] As an example, during epitaxial verification, before the trial production of the vertical-cavity surface-emitting laser epitaxial structure, the process includes maintenance such as replacing the epitaxial process chamber components of the vertical-cavity surface-emitting laser based on the growth results, and baking the epitaxial process chamber to remove moisture and other volatile substances from the epitaxial process chamber, thereby reducing or even avoiding film defects that may occur during epitaxial growth and thus affect the performance of the vertical-cavity surface-emitting laser epitaxial structure. At the same time, it can reduce or even avoid oxidation or corrosion of the components in the epitaxial process chamber.

[0052] It should be noted that the remaining film layers in step S2, from bottom to top, include the N-type AlGaAs Bragg mirror layer 12, the InGaAs quantum well active region layer 13, the AlGaAs oxide confinement layer 14, and the P-type AlGaAs Bragg mirror layer 15.

[0053] The verification method requires monitoring the trial growth parameters of the AlGaAs buffer layer 11 and the remaining film layers. For example, the trial growth parameters include film thickness, growth rate, molar composition, and surface morphology. Preferably, in this embodiment, the method for monitoring the growth state of the AlGaAs buffer layer 11 is EpiTT in-situ monitoring. EpiTT in-situ monitoring can monitor and control the trial growth parameters in real time, thereby ensuring the stability of the epitaxial growth process and the performance stability of the vertical cavity surface-emitting laser epitaxial structure.

[0054] In step S3, it is necessary to determine whether the trial production results meet the preset results. The preset results can be formulated according to the specifications of the target vertical cavity surface-emitting laser. For example, the preset results include output optical power, threshold current, reflection spectrum wavelength, quantum well wavelength, spectral width and / or operational reliability test, etc.

[0055] As an example, during the formal continuous production of the vertical-cavity surface-emitting laser epitaxial structure, the process further includes determining whether the formal continuous production result meets the preset requirements. If the preset requirements are not met, steps S1 to S4 are repeated, i.e., the epitaxial verification is performed again. As an example, the formal continuous production result includes output optical power, threshold current, reflection spectrum wavelength, quantum well wavelength, spectral width, and / or operational reliability testing, etc.

[0056] Taking a total of 20 furnace cycles as an example, one furnace cycle consists of epitaxially growing the AlGaAs buffer layer 11 on the GaAs substrate 10 and depositing AlGaAs material to form the AlGaAs buffer layer 11 as an inner wall protective layer on the inner wall of the epitaxial process chamber during the epitaxial process. In this embodiment, since the growth parameters of the AlGaAs buffer layer 11 can be monitored, the number of trial growths is reduced. The trial production can be exemplarily reduced to 1 to 2 furnace cycles, that is, there are 1 to 2 furnace cycles before the formal continuous production, accounting for 5% to 10% of the total furnace cycle. Compared with the prior art, this improves the efficiency of epitaxial verification.

[0057] In summary, this invention provides an epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL) and its verification method. This verification method uses an AlGaAs buffer layer with an Al molar fraction greater than 60% as the buffer layer for epitaxial verification. Since the AlGaAs buffer layer is a different material from the GaAs substrate, the epitaxial growth of the AlGaAs buffer layer can be monitored in situ during epitaxial verification. This allows for timely adjustment of growth parameters during the epitaxial process, reducing the number of trial productions and improving epitaxial verification efficiency. Furthermore, by growing an AlGaAs buffer layer with an Al molar fraction greater than 60% on a GaAs substrate using an epitaxial process, and simultaneously depositing an AlGaAs material with an Al molar fraction greater than 60% on the inner wall of the epitaxial process chamber as an inner wall protective layer, the method reduces or even eliminates the possibility of impurity particles falling from the epitaxial process chamber onto the surface of the epitaxially grown film, thus preventing defects that could affect the performance of the VCSEL epitaxial structure. It also eliminates the need for separate furnace cycles where an inner wall protective layer is deposited on the inner wall of the epitaxial process chamber, further improving epitaxial verification efficiency. Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0058] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for verifying the epitaxial structure of a vertical-cavity surface-emitting laser, characterized in that, Epitaxial verification is carried out using the epitaxial structure of a vertical cavity surface emitting laser. The epitaxial structure of the vertical cavity surface emitting laser sequentially includes, from bottom to top: a GaAs substrate, an AlGaAs buffer layer, an N-type AlGaAs Bragg reflector layer, an InGaAs quantum well active region layer, an AlGaAs oxidation confinement layer, and a P-type AlGaAs Bragg reflector layer. The material composition of the AlGaAs buffer layer is Al x Ga (1-x) As, where 0.6 < x < 1; The verification method includes the following steps: S1. Conduct trial production of the vertical cavity surface-emitting laser epitaxial structure. First, the AlGaAs buffer layer is grown on the GaAs substrate using an epitaxial process. At the same time, AlGaAs material forming the AlGaAs buffer layer is deposited on the inner wall of the epitaxial process chamber as an inner wall protection layer during the epitaxial process. The growth parameters of the AlGaAs buffer layer are monitored. S2. Continue the trial production to continue the epitaxial growth of the remaining film layers of the vertical cavity surface-emitting laser epitaxial structure above the AlGaAs buffer layer, and monitor the trial growth parameters of the remaining film layers; S3. Determine whether the trial production result meets the preset requirements; if the preset requirements are not met, adjust the trial production parameters according to the trial production result, and continue to perform steps S1, S2 and S3 based on the adjusted production parameters until the trial production result meets the preset requirements. S4. If the trial production results meet the preset requirements, proceed with the formal continuous production of the vertical cavity surface-emitting laser epitaxial structure.

2. The verification method for the epitaxial structure of a vertical-cavity surface-emitting laser according to claim 1, characterized in that: Before the trial production of the vertical cavity surface-emitting laser epitaxial structure, the process also includes equipment maintenance and baking of the epitaxial process chamber.

3. The verification method for the epitaxial structure of a vertical-cavity surface-emitting laser according to claim 1, characterized in that: The method for monitoring the growth state of the AlGaAs buffer layer is in-situ monitoring using EpiTT technology.

4. The verification method for the epitaxial structure of a vertical-cavity surface-emitting laser according to claim 1, characterized in that: The test growth parameters include film thickness, growth rate, molar composition, and surface morphology.

5. The verification method for the epitaxial structure of a vertical-cavity surface-emitting laser according to claim 1, characterized in that: During the formal continuous production of the vertical cavity surface-emitting laser epitaxial structure, the process also includes determining whether the formal continuous production result meets the preset requirements. If the preset requirements are not met, steps S1 to S4 are repeated.

6. The verification method for the epitaxial structure of a vertical-cavity surface-emitting laser according to claim 1, characterized in that: The number of trial production runs is 1 to 2.

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