Display panel, preparation method of display panel and display device

Abstract

The invention discloses a display panel, a preparation method of the display panel and a display device. The display panel comprises a substrate; the isolation structure is arranged on one side of the substrate and is enclosed to form a plurality of isolation openings; at least part of the structure of the light-emitting device is located in the isolation opening, and the light-emitting device comprises a first electrode, a light-emitting unit and a second electrode which are stacked in sequence in the direction away from the substrate; the first packaging layer comprises a packaging unit arranged on the side, away from the substrate, of the light-emitting device, the packaging unit partially extends to the side, away from the substrate, of the isolation structure, and a gap is formed between the packaging unit and the isolation structure; the redundant material is arranged in the gap and is made of the same material as at least part of the film layers in at least part of the light-emitting units; the filling structure is arranged in the gap and located on the side, away from the substrate, of the redundant material, and the material of the filling structure is different from that of the second electrode. The display panel provided by the embodiment of the invention has a relatively good packaging effect.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular, relates to a display panel, a method for preparing a display panel, and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices.

[0003] However, the process performance of current OLED display products needs to be improved. Summary of the invention

[0004] The embodiments of the present application provide a display panel, a method for manufacturing a display panel, and a display device, aiming to improve the packaging effect of the display panel.

[0005] An embodiment of the first aspect of the present application provides a display panel, comprising: a substrate; an isolation structure, which is arranged on one side of the substrate and encloses a plurality of isolation openings; a light-emitting device, at least part of which is located in the isolation opening, and in a direction away from the substrate, the light-emitting device comprises a first electrode, a light-emitting unit and a second electrode stacked in sequence; a first encapsulation layer, comprising an encapsulation unit arranged on a side of the light-emitting device away from the substrate, the encapsulation unit partially extending to a side of the isolation structure away from the substrate and having a gap between the isolation structure; a redundant material, which is arranged in the gap and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit; a filling structure, which is arranged in the gap and is located on a side of the redundant material away from the substrate, the filling structure and the second electrode are made of different materials.

[0006] According to an embodiment of the first aspect of the present application, the material of the filling structure includes an organic material.

[0007] According to any of the aforementioned implementations of the first aspect of the present application, the material of the filling structure includes an organic insulating material.

[0008] According to any of the aforementioned embodiments of the first aspect of the present application, the gap is not provided with a material that is the same as that of the second electrode.

[0009] According to any of the aforementioned implementations of the first aspect of the present application, the display panel further includes a second encapsulation layer disposed on a side of the first encapsulation layer facing away from the substrate, and a portion of the second encapsulation layer extends into the gap to form a filling structure.

[0010] According to any of the aforementioned embodiments of the first aspect of the present application, adjacent packaging units are arranged at intervals, and / or adjacent redundant materials are arranged at intervals.

[0011] According to any of the aforementioned embodiments of the first aspect of the present application, along the thickness direction of the substrate, the filling structure is located between the redundant material and the packaging unit, and the filling structure is in contact with a surface of the packaging unit facing the isolation structure.

[0012] According to any of the aforementioned embodiments of the first aspect of the present application, a portion of the filling structure extends between adjacent packaging units, and / or a portion of the filling structure extends between adjacent redundant materials.

[0013] According to any of the aforementioned embodiments of the first aspect of the present application, the isolation opening includes a first opening and a second opening, the light-emitting device includes a first type of device arranged corresponding to the first opening and a second type of device arranged corresponding to the second opening, the light-emitting colors of the first type of device and the second type of device are different, the packaging unit includes a first unit arranged on the side of the first type of device away from the substrate and a second unit arranged on the side of the second type of device away from the substrate, wherein the redundant material includes a first type of material located in a gap between the first unit and the isolation structure, the first type of material is arranged with the same material as the light-emitting unit of the first type of device, and / or the redundant material includes a second type of material located in the gap between the second unit and the isolation structure, the second type of material is arranged with the same material as the light-emitting unit of the second type of device.

[0014] According to any of the aforementioned embodiments of the first aspect of the present application, the isolation opening also includes a third opening, the light-emitting device includes a third type of device arranged corresponding to the third opening, the light-emitting colors of the first type of device, the second type of device and the third type of device are different from each other, and the packaging unit includes a third unit arranged on the side of the third type of device away from the substrate, wherein the redundant material includes a third type of material located in the gap between the third unit and the isolation structure, and the third type of material is arranged with the same material as the light-emitting unit of the third type of device.

[0015] According to any of the aforementioned embodiments of the first aspect of the present application, the light-emitting device further comprises a light extraction layer disposed on a side of the second electrode facing away from the substrate.

[0016] According to any of the aforementioned implementations of the first aspect of the present application, the display panel further comprises a redundant light extraction material located on a side of the redundant material facing away from the substrate, and the redundant light extraction material is provided with the same material as the light extraction layer.

[0017] According to any of the aforementioned implementations of the first aspect of the present application, along the thickness direction of the substrate, at least part of the redundant light extraction material is located between the redundant material and the filling structure.

[0018] According to any of the aforementioned embodiments of the first aspect of the present application, the isolation structure includes a first isolation portion and a second isolation portion located on a side of the first isolation portion facing away from the substrate, the second isolation portion is arranged to protrude from the first isolation portion toward the isolation opening, and the packaging unit portion extends to a side of the second isolation portion facing away from the substrate and has a gap between the second isolation portion and the second isolation portion.

[0019] According to any of the aforementioned implementations of the first aspect of the present application, the material of the isolation structure includes a conductive material, and the second electrode is connected to the isolation structure.

[0020] According to any of the aforementioned embodiments of the first aspect of the present application, the isolation structure further includes a conductive portion disposed on a side of the first isolation portion facing the substrate, and the conductive portion is disposed protruding from the first isolation portion toward the isolation opening.

[0021] An embodiment of the first aspect of the present application also provides a display panel, including: a substrate; an isolation structure, which is arranged on one side of the substrate and encloses a plurality of isolation openings; a light-emitting device, at least part of which is located in the isolation opening, and in a direction away from the substrate, the light-emitting device includes a first electrode, a light-emitting unit, a second electrode and a light extraction layer stacked in sequence; a first encapsulation layer, including an encapsulation unit arranged on a side of the light-emitting device away from the substrate, the encapsulation unit partially extending to a side of the isolation structure away from the substrate and having a gap between the isolation structure; a redundant material, which is arranged in the gap and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit; a redundant light extraction material, which is arranged in the gap and is located on the side of the redundant material away from the substrate, and the redundant light extraction material is arranged with the same material as the light extraction layer.

[0022] The embodiment of the first aspect of the present application also provides a display panel, including: a substrate; an isolation structure, which is arranged on one side of the substrate and encloses a plurality of isolation openings; a light-emitting device, at least part of which is located in the isolation opening, and in the direction away from the substrate, the light-emitting device includes a first electrode, a light-emitting unit and a second electrode stacked in sequence; a first encapsulation layer, including an encapsulation unit arranged on the side of the light-emitting device away from the substrate, the encapsulation unit partially extends to the side of the isolation structure away from the substrate and has a gap between the isolation structure, and the gap is not provided with the same material as the material of the second electrode; a redundant material is arranged in the gap and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit.

[0023] An embodiment of a second aspect of the present application provides a method for preparing a display panel, including:

[0024] forming an isolation material layer on the substrate;

[0025] performing patterning on the isolation material layer to form a first opening;

[0026] sequentially preparing a first type of light-emitting material, a first conductive material and a first packaging material on the entire surface;

[0027] removing a portion of the first packaging material outside the first opening to form a first unit;

[0028] Removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device disposed corresponding to the first opening;

[0029] A dry etching process is used to remove a portion of the first type of light emitting material outside the first opening to form a light emitting unit of the first type of device arranged corresponding to the first opening.

[0030] According to an implementation of the second aspect of the present application, in the step of removing a portion of the first packaging material outside the first opening to form the first unit:

[0031] Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light emitting material and part of the first conductive material are located in the gap corresponding to the first unit;

[0032] In the step of removing a portion of the first type of light emitting material outside the first opening by using a dry etching process to form a light emitting unit of the first type of device arranged corresponding to the first opening:

[0033] A dry etching process is used to remove a portion of the first type of light emitting material outside the first opening to form a light emitting unit of the first type of device arranged corresponding to the first opening and a redundant material located in a gap corresponding to the first unit.

[0034] According to any of the aforementioned implementations of the second aspect of the present application, in the step of sequentially preparing the first type of light-emitting material, the first conductive material, and the first packaging material on the entire surface:

[0035] sequentially preparing a first type of light-emitting material, a first conductive material, a first light extraction material and a first packaging material on the entire surface;

[0036] After the step of removing a portion of the first packaging material outside the first opening to form a first unit, the step includes:

[0037] A dry etching process is used to remove a portion of the first light extraction material outside the first opening to form a light extraction layer of the first type of device arranged corresponding to the first opening.

[0038] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the first packaging material outside the first opening to form the first unit:

[0039] Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light emitting material, part of the first conductive material and part of the first light extraction material are located in the gap corresponding to the first unit;

[0040] In the step of removing a portion of the first light extraction material outside the first opening by using a dry etching process to form a light extraction layer of the first type of device arranged corresponding to the first opening:

[0041] A dry etching process is used to remove a portion of the first light extraction material outside the first opening to form a light extraction layer of a first type of device arranged corresponding to the first opening and a redundant light extraction material located in a gap corresponding to the first unit.

[0042] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the first packaging material outside the first opening to form the first unit:

[0043] A dry etching process is used to remove a portion of the first packaging material outside the first opening to form a first unit.

[0044] According to any of the aforementioned implementations of the second aspect of the present application, after the step of sequentially preparing the first type of light-emitting material, the first conductive material and the first packaging material on the entire surface, the step further includes:

[0045] Preparing a first photoresist structure corresponding to the first opening on the first packaging material;

[0046] After the step of removing a portion of the first type of light emitting material outside the first opening by using a dry etching process to form a light emitting unit of the first type of device arranged corresponding to the first opening, the method further includes:

[0047] The first photoresist structure is removed using a dry etching process.

[0048] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes:

[0049] A dry etching process is used to remove part of the first conductive material outside the first opening to form a second electrode of the first type device corresponding to the first opening, or a wet etching process is used to remove part of the first conductive material outside the first opening to form a second electrode of the first type device corresponding to the first opening.

[0050] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the first packaging material outside the first opening to form the first unit:

[0051] Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light-emitting material and the first conductive material are located in the gap corresponding to the first unit;

[0052] The step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device arranged corresponding to the first opening includes:

[0053] Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material is located in a gap corresponding to the first unit;

[0054] After the step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method further includes:

[0055] The first residual material is removed using a wet etching process.

[0056] According to any of the aforementioned embodiments of the second aspect of the present application, the step of removing the first residual material using a wet etching process is located after the step of removing part of the first type of light-emitting material outside the first opening using a dry etching process to form a light-emitting unit of the first type of device corresponding to the first opening.

[0057] According to any of the aforementioned embodiments of the second aspect of the present application, the preparation method further comprises:

[0058] performing patterning on the isolation material layer to form a second opening;

[0059] sequentially preparing a second type of light-emitting material, a second conductive material and a second packaging material on the entire surface;

[0060] removing a portion of the second packaging material outside the second opening to form a second unit;

[0061] Removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device disposed corresponding to the second opening;

[0062] A dry etching process is used to remove a portion of the second type of light emitting material outside the second opening to form a light emitting unit of the second type of device arranged corresponding to the second opening.

[0063] According to any of the aforementioned implementations of the second aspect of the present application, after the steps of sequentially preparing the second type of light-emitting material, the second conductive material and the second packaging material on the entire surface, the step further includes:

[0064] Preparing a second photoresist structure corresponding to the second opening on the second packaging material;

[0065] After the step of removing part of the second type of light emitting material outside the second opening by using a dry etching process to form a light emitting unit of the second type of device arranged corresponding to the second opening, the method further includes:

[0066] The second photoresist structure is removed using a dry etching process.

[0067] According to any of the aforementioned embodiments of the second aspect of the present application, the step of patterning the isolation material layer to form the second opening is located within the step of patterning the isolation material layer to form the first opening.

[0068] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes:

[0069] Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material covers an inner wall of the second opening;

[0070] After the step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method includes:

[0071] The first residual material is removed using a wet etching process.

[0072] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the second packaging material outside the second opening to form the second unit:

[0073] Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light emitting material and part of the second conductive material are located in the gap corresponding to the second unit;

[0074] In the step of removing a portion of the second type of light emitting material outside the second opening by using a dry etching process to form a light emitting unit of the second type of device arranged corresponding to the second opening:

[0075] A dry etching process is used to remove part of the second type of light emitting material outside the second opening to form a light emitting unit of the second type of device corresponding to the second opening and a redundant material located in a gap corresponding to the second unit.

[0076] According to any of the aforementioned embodiments of the second aspect of the present application, in the step of sequentially preparing the second type of light-emitting material, the second conductive material and the second packaging material on the entire surface:

[0077] sequentially preparing a second type of light-emitting material, a second conductive material, a second light extraction material and a second packaging material on the entire surface;

[0078] After the step of removing a portion of the second packaging material outside the second opening to form a second unit, the step includes:

[0079] A dry etching process is used to remove a portion of the second light extraction material outside the second opening to form a light extraction layer of the second type of device arranged corresponding to the second opening.

[0080] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the second packaging material outside the second opening to form the second unit:

[0081] Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light emitting material, part of the second conductive material and part of the second light extraction material are located in the gap corresponding to the second unit;

[0082] In the step of removing a portion of the second light extraction material outside the second opening by using a dry etching process to form a light extraction layer of the second type of device arranged corresponding to the second opening:

[0083] A dry etching process is used to remove a portion of the second light extraction material outside the second opening to form a light extraction layer of a second type of device arranged corresponding to the second opening and a redundant light extraction material located in a gap corresponding to the second unit.

[0084] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device arranged corresponding to the second opening includes:

[0085] A dry etching process is used to remove part of the second conductive material outside the second opening to form a second electrode of the second type of device corresponding to the second opening, or a wet etching process is used to remove part of the second conductive material outside the second opening to form a second electrode of the second type of device corresponding to the second opening.

[0086] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the second packaging material outside the second opening to form the second unit:

[0087] Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light emitting material and the second conductive material are located in the gap corresponding to the second unit;

[0088] The step of removing a portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device arranged corresponding to the second opening includes:

[0089] Using a dry etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type device disposed corresponding to the second opening and a second residual material, wherein at least a portion of the second residual material is located in a gap corresponding to the second unit;

[0090] After the step of removing a portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device disposed corresponding to the second opening and a second residual material, the method further includes:

[0091] The second residual material is removed using a wet etching process.

[0092] According to any of the aforementioned embodiments of the second aspect of the present application, the step of removing the second residual material using a wet etching process is located after the step of removing part of the second type of light-emitting material outside the second opening using a dry etching process to form a light-emitting unit of the second type of device corresponding to the second opening.

[0093] According to any of the aforementioned embodiments of the second aspect of the present application, the preparation method further comprises:

[0094] performing patterning on the isolation material layer to form a third opening;

[0095] sequentially preparing a third type of light-emitting material, a third conductive material and a third packaging material on the entire surface;

[0096] removing a portion of the third packaging material outside the third opening to form a third unit;

[0097] removing a portion of the third conductive material outside the third opening to form a second electrode of the third type device arranged corresponding to the third opening;

[0098] A dry etching process is used to remove a portion of the third type light-emitting material outside the third opening to form a light-emitting unit of the third type device arranged corresponding to the third opening.

[0099] According to any of the aforementioned implementations of the second aspect of the present application, after the steps of sequentially preparing the third type of light-emitting material, the third conductive material and the third packaging material on the entire surface, the step further includes:

[0100] A third photoresist structure is prepared on the third packaging material corresponding to the third opening;

[0101] After the step of removing part of the third type of light emitting material outside the third opening by using a dry etching process to form a light emitting unit of the third type of device arranged corresponding to the third opening, the method further includes:

[0102] The third photoresist structure is removed using a dry etching process.

[0103] According to any of the aforementioned embodiments of the second aspect of the present application, the step of patterning the isolation material layer to form a third opening is located in the step of patterning the isolation material layer to form the first opening, and / or the step of patterning the isolation material layer to form the third opening is located in the step of patterning the isolation material layer to form the second opening.

[0104] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes:

[0105] Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material covers an inner wall of the third opening;

[0106] After the step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method includes:

[0107] The first residual material is removed using a wet etching process.

[0108] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device arranged corresponding to the second opening includes:

[0109] Using a dry etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type device disposed corresponding to the second opening and a second residual material, wherein at least a portion of the second residual material covers an inner wall of the third opening;

[0110] After the step of removing a portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device disposed corresponding to the second opening and a second residual material, the method comprises:

[0111] The second residual material is removed using a wet etching process.

[0112] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the third packaging material outside the third opening to form the third unit:

[0113] Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light emitting material and part of the third conductive material are located in the gap corresponding to the third unit;

[0114] In the step of removing part of the third type of light emitting material outside the third opening by using a dry etching process to form a light emitting unit of the third type of device arranged corresponding to the third opening:

[0115] A dry etching process is used to remove part of the third type light emitting material outside the third opening to form a light emitting unit of the third type device corresponding to the third opening and a redundant material located in a gap corresponding to the third unit.

[0116] According to any of the aforementioned implementations of the second aspect of the present application, in the step of sequentially preparing the third type of light-emitting material, the third conductive material, and the third packaging material on the entire surface:

[0117] sequentially preparing a third type of light-emitting material, a third conductive material, a third light extraction material and a third packaging material on the entire surface;

[0118] After the step of removing a portion of the third packaging material outside the third opening to form a third unit, the step includes:

[0119] A dry etching process is used to remove a portion of the third light extraction material outside the third opening to form a light extraction layer of a third type of device arranged corresponding to the third opening.

[0120] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the third packaging material outside the third opening to form the third unit:

[0121] Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light emitting material, part of the third conductive material and part of the third light extraction material are located in the gap corresponding to the third unit;

[0122] In the step of removing a portion of the third light extraction material outside the third opening by using a dry etching process to form a light extraction layer of a third type device arranged corresponding to the third opening:

[0123] A dry etching process is used to remove a portion of the third light extraction material outside the third opening to form a light extraction layer of a third type of device arranged corresponding to the third opening and a redundant light extraction material located in a gap corresponding to the third unit.

[0124] According to any of the foregoing implementations of the second aspect of the present application, the step of removing a portion of the third conductive material outside the second opening to form a second electrode of the third type device arranged corresponding to the third opening includes:

[0125] A dry etching process is used to remove a portion of the third conductive material outside the third opening to form a second electrode of the third type of device corresponding to the third opening, or a wet etching process is used to remove a portion of the third conductive material outside the third opening to form a second electrode of the third type of device corresponding to the third opening.

[0126] According to any of the foregoing implementations of the second aspect of the present application, in the step of removing a portion of the third packaging material outside the third opening to form the third unit:

[0127] Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light emitting material and the third conductive material are located in the gap corresponding to the third unit;

[0128] The step of removing a portion of the third conductive material outside the third opening by using a dry etching process to form a second electrode of the third type device arranged corresponding to the third opening includes:

[0129] Using a dry etching process to remove a portion of the third conductive material outside the third opening to form a second electrode of the third type device disposed corresponding to the third opening and a third residual material, wherein at least a portion of the third residual material is located in a gap corresponding to the third unit;

[0130] After the step of removing a portion of the third conductive material outside the third opening by using a dry etching process to form a second electrode of the third type device disposed corresponding to the third opening and a third residual material, the method further includes:

[0131] The third residual material is removed using a wet etching process.

[0132] According to any of the aforementioned embodiments of the second aspect of the present application, the step of removing the third residual material using a wet etching process is located after the step of removing part of the third type of light-emitting material outside the third opening using a dry etching process to form a light-emitting unit of the third type of device corresponding to the third opening.

[0133] According to any of the foregoing implementations of the second aspect of the present application, in the step of patterning the isolation material layer to form the third opening, an isolation structure is formed, a portion of the first unit, a portion of the second unit, and a portion of the third unit extend to a side of the isolation structure away from the substrate and have a gap with the isolation structure, and a redundant material is arranged in the gap, and after using a dry etching process to remove a portion of the third type of light-emitting material outside the third opening to form a light-emitting unit of the third type of device corresponding to the third opening, the step further includes:

[0134] A second encapsulation layer is prepared, and at least a portion of the material of the second encapsulation layer extends into the gap to form a filling structure.

[0135] An embodiment of the third aspect of the present application provides a display device, including a display panel according to any of the above embodiments, or a display panel prepared by a preparation method according to any of the above embodiments.

[0136] In a display panel provided in an embodiment of the present application, the display panel includes a substrate, an isolation structure, a light-emitting device, a first encapsulation layer, a redundant material, and a filling structure. The isolation structure is arranged on one side of the substrate and encloses a plurality of isolation openings, at least part of the structure of the light-emitting device is located in the isolation opening, and the isolation structure can be used to participate in dividing the sub-pixels of the display panel. The first encapsulation layer includes an encapsulation unit arranged on the side of the light-emitting device away from the substrate, and the encapsulation unit can be used to encapsulate the light-emitting device. The encapsulation unit can partially extend to the side of the isolation structure away from the substrate, which can better improve the encapsulation path of the encapsulation unit and improve the encapsulation effect of the encapsulation unit.

[0137] There is a gap between the encapsulation unit extending to the side of the isolation structure away from the substrate and the isolation structure, and the redundant material is arranged in the gap, so that the redundant material can be used to limit the transmission of water vapor to the light-emitting device through the gap, which can better improve the encapsulation effect of the display panel. In the direction away from the substrate, the light-emitting device includes a first electrode, a light-emitting unit and a second electrode stacked in sequence, and by setting the redundant material and at least part of the film layer in at least part of the light-emitting unit to be the same material, the redundant material can be prepared using the same preparation equipment as at least part of the film layer in the light-emitting unit, and the redundant material can be prepared in the same preparation process as at least part of the light-emitting unit, thereby better improving the preparation efficiency of the display panel.

[0138] The filling structure is arranged in the gap and is located on the side of the redundant material away from the substrate. The material of the filling structure and the second electrode may be different. The filling structure can be used to support the packaging unit extending to the side of the isolation structure away from the substrate, so that the display panel can have better structural stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0139] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0140] Figure 1 is a partial schematic diagram of an isolation structure provided in an embodiment of the present application;

[0141] Figure 2 is a partial cross-sectional view of a display panel provided in an embodiment of the present application;

[0142] Figure 3 is a partial cross-sectional view of a display panel provided by another embodiment of the present application;

[0143] Figure 4 is a partial cross-sectional view of a display panel provided in yet another embodiment of the present application;

[0144] Figure 5 It is a schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application;

[0145] Figures 6 to 28 It is a schematic diagram of the preparation process of a method for preparing a display panel provided in an embodiment of the present application.

[0146] Description of reference numerals:

[0147] 10. display panel; 10a. gap; 11. pixel definition material layer; 12. isolation material layer; 12a. first isolation material layer; 12b. second isolation material layer; 12c. third isolation material layer;

[0148] 100, substrate; 110, substrate; 120, first insulating layer; 130, second insulating layer; 140, third insulating layer; 150, driving circuit; 151, transistor; 151a, gate; 151b, source and drain; 152, storage capacitor; 152a, first plate; 152b, second plate;

[0149] 200, pixel definition layer; 210, pixel definition portion; 220, pixel opening

[0150] 300, isolation structure; 301, isolation opening; 301a, first opening; 301b, second opening; 301c, third opening; 310, first isolation part; 320, second isolation part; 330, conductive part;

[0151] 400, light emitting device; 401, first type device; 402, second type device; 403, third type device; 410, first electrode; 420, light emitting unit; 430, second electrode;

[0152] 500, first encapsulation layer; 510, encapsulation unit; 511, first unit; 512, second unit; 513, third unit;

[0153] 600, second encapsulation layer;

[0154] 700, third encapsulation layer;

[0155] CPL, light extraction layer;

[0156] S, filling structure;

[0157] R, redundant materials; R1, first-class materials; R2, second-class materials; R3, third-class materials;

[0158] T, redundant light extraction materials;

[0159] E1, first type of luminescent material; E2, second type of luminescent material; E3, third type of luminescent material;

[0160] D1, first conductive material; D2, second conductive material; D3, third conductive material;

[0161] F1, first packaging material; F2, second packaging material; F3, third packaging material;

[0162] G1, first light extraction material; G2, second light extraction material; G3, third light extraction material;

[0163] C1, first residual material; C2, second residual material; C3, third residual material;

[0164] P1, first photoresist structure; P2, second photoresist structure; P3, third photoresist structure. DETAILED DESCRIPTION

[0165] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present application and are not configured to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0166] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0167] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0168] Embodiments of the present application provide a display panel, a method for manufacturing a display panel, and a display device. Embodiments of the display panel, the method for manufacturing a display panel, and the display device will be described below in conjunction with the accompanying drawings.

[0169] Figure 1 is a partial schematic diagram of an isolation structure 300 provided in an embodiment of the present application, Figure 2 It is a partial cross-sectional view of a display panel 10 provided in an embodiment of the present application.

[0170] like Figure 1 and Figure 2 As shown, an embodiment of the first aspect of the present application provides a display panel 10, including: a substrate 100; an isolation structure 300, which is arranged on one side of the substrate 100 and encloses a plurality of isolation openings 301; a light-emitting device 400, at least part of which is located in the isolation opening 301, and in a direction away from the substrate 100, the light-emitting device 400 includes a first electrode 410, a light-emitting unit 420 and a second electrode 430 stacked in sequence; a first encapsulation layer 500, including an encapsulation unit 510 arranged on a side of the light-emitting device 400 away from the substrate 100, the encapsulation unit 510 partially extends to a side of the isolation structure 300 away from the substrate 100 and has a gap 10a between the isolation structure 300; a redundant material R, which is arranged in the gap 10a and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit 420; a filling structure S, which is arranged in the gap 10a and is located on the side of the redundant material R away from the substrate 100, and the material of the filling structure S is different from that of the second electrode 430.

[0171] In a display panel 10 provided in an embodiment of the present application, the display panel 10 includes a substrate 100, an isolation structure 300, a light-emitting device 400, a first encapsulation layer 500, a redundant material R, and a filling structure S. The isolation structure 300 is disposed on one side of the substrate 100 and encloses a plurality of isolation openings 301, at least a portion of the structure of the light-emitting device 400 is located in the isolation opening 301, and the isolation structure 300 can be used to participate in dividing the sub-pixels of the display panel 10.

[0172] Regarding the relevant schemes of the isolation structure 300 (also called partition structure, etc.), the structure, materials and preparation methods are described in patents (applications) CN118251982A, 202410864269.8, PCT / CN2024 / 098407, PCT / CN2024 / 102783, PCT / CN2024 / 098217, PCT / CN2024 / 099419, PCT / CN2024 / 099072, etc., and their contents are incorporated into this application by reference for reference.

[0173] The first encapsulation layer 500 includes an encapsulation unit 510 disposed on the side of the light emitting device 400 away from the substrate 100, and the encapsulation unit 510 can be used to encapsulate the light emitting device 400. The encapsulation unit 510 can partially extend to the side of the isolation structure 300 away from the substrate 100, which can improve the encapsulation path of the encapsulation unit 510 and improve the encapsulation effect of the encapsulation unit 510.

[0174] There is a gap 10a between the encapsulation unit 510 extending to the side of the isolation structure 300 away from the substrate 100 and the isolation structure 300. The redundant material R is arranged in the gap 10a, so that the redundant material R can be used to limit the transmission of water vapor to the light-emitting device 400 through the gap 10a, which can well improve the encapsulation effect of the display panel 10. In the direction away from the substrate 100, the light-emitting device 400 includes a first electrode 410, a light-emitting unit 420 and a second electrode 430 stacked in sequence. By setting the redundant material R and at least part of the film layer in the light-emitting unit 420 to be the same material, the redundant material R can be prepared with at least part of the light-emitting unit 420 using the same preparation equipment, and the redundant material R can be prepared with at least part of the light-emitting unit 420 in the same preparation process, so that the preparation efficiency of the display panel 10 can be well improved.

[0175] Exemplarily, during the preparation of the light-emitting unit 420, the material of the light-emitting unit 420 that is not etched away between the packaging unit 510 and the isolation structure 300 extending to the side of the isolation structure 300 away from the substrate 100 may form a redundant material R. For example, when the material of the light-emitting unit 420 is dry-etched, the etching gas cannot enter the gap 10a well, so that the material of the light-emitting unit 420 that extends to the side of the isolation structure 300 away from the substrate 100 and the isolation structure 300 is not easily etched away, so that the remaining material of the light-emitting unit 420 may form a redundant material R.

[0176] Among them, when the material of the light-emitting unit 420 is dry-etched, compared with wet-etching the material of the light-emitting unit 420 (for example, wet-etching the material of the light-emitting unit 420 using a wet etching liquid), the etching material (for example, etching gas) used during dry etching is less likely to cause excessive damage to the first encapsulation layer 500 and the isolation structure 300, thereby better improving the encapsulation effect and structural reliability of the display panel 10.

[0177] The filling structure S is arranged in the gap 10a and is located on the side of the redundant material R away from the substrate 100. The material of the filling structure S and the second electrode 430 may be different. The filling structure S can be used to support the packaging unit 510 extending to the side of the isolation structure 300 away from the substrate 100, so that the display panel 10 can have better structural stability.

[0178] In some optional embodiments, the gap 10 a may not be provided with the same material as that of the second electrode 430 .

[0179] Among them, if the gap 10a contains the same material as the second electrode 430, it is easy to affect the transmittance of the display panel 10. Therefore, by setting the gap 10a to not contain the same material as the second electrode 430, the transmittance of the display panel 10 can be better improved.

[0180] In addition, affected by the material of the second electrode 430, if the same material as the second electrode 430 exists in the gap 10a, it is easy to affect the structural reliability of the packaging unit 510 at the gap 10a. For example, when the same material as the second electrode 430 exists in the gap 10a, the same material as the second electrode 430 is easily oxidized, thereby easily affecting the structural reliability of the packaging unit 510 at the gap 10a.

[0181] In some embodiments of the present application, there are multiple ways to set the substrate 100. The substrate 100 may include, for example, a substrate 110 and a driving circuit 150 disposed on the substrate 110. Optionally, the substrate 100 includes a first insulating layer 120, a second insulating layer 130, and a third insulating layer 140 that are stacked. Exemplarily, the driving circuit 150 may include a transistor 151, a storage capacitor 152, and a driving signal line for connecting various devices. The transistor 151 may include a semiconductor, a gate 151a, and a source and drain 151b. The storage capacitor 152 includes a first plate 152a and a second plate 152b.

[0182] As an example, the gate 151a and the first electrode 152a can be located on the side of the first insulating layer 120 facing the substrate 110, the second electrode 152b can be located between the first insulating layer 120 and the second insulating layer 130, and the source and drain 151b can be located between the second insulating layer 130 and the third insulating layer 140.

[0183] In some optional embodiments, the display panel 10 may further include a pixel definition layer 200 disposed on one side of the substrate 100, and the pixel definition layer 200 may include a pixel defining portion 210 and a pixel opening 220 formed by the pixel defining portion 210. The pixel opening 220 may be connected to the isolation opening 301, a portion of the structure of the light emitting device 400 may be located in the pixel opening 220, and another portion of the light emitting device 400 may be located in the isolation opening 301. The pixel definition layer 200 may also be used to participate in dividing the sub-pixels of the display panel 10.

[0184] In some embodiments of the present application, the number of the isolation openings 301 and the number of the pixel openings 220 may be plural, and a single isolation opening 301 may be connected to a single pixel opening 220 .

[0185] Optionally, both the isolation structure 300 and the pixel definition layer 200 may be mesh-shaped, and the hollowed-out areas in the mesh-shaped isolation structure 300 may form isolation openings 301 , and the hollowed-out areas in the mesh-shaped pixel definition layer 200 may form pixel openings 220 .

[0186] Optionally, there are multiple ways to set the relative position between the pixel defining portion 210 and the isolation structure 300. For example, the isolation structure 300 can be set on the side of the pixel defining portion 210 away from the substrate 100, that is, the isolation structure 300 can be directly set on the pixel defining portion 210. Or for example, the pixel defining portion 210 can be provided with a receiving groove (not shown in the figure), and at least part of the isolation structure 300 can be located in the receiving groove, so that the isolation structure 300 is not easy to have an excessive height compared to the substrate 100, thereby being able to better reduce the thickness of the display panel 10. For the convenience of description, the following embodiments are described by taking the isolation structure 300 being set on the side of the pixel defining portion 210 away from the substrate 100 as an example.

[0187] In some optional embodiments, the isolation structure 300 may include a first isolation portion 310 and a second isolation portion 320 located on a side of the first isolation portion 310 facing away from the substrate 100 , and the second isolation portion 320 is disposed protruding from the first isolation portion 310 toward the isolation opening 301 .

[0188] Optionally, the packaging unit 510 may partially extend to a side of the second isolation portion 320 away from the substrate 100 and have a gap 10 a between the second isolation portion 320 .

[0189] In these optional embodiments, by setting the second isolation portion 320 protruding from the first isolation portion 310 toward the isolation opening 301, when preparing the light-emitting device 400 of the display panel 10, part of the material of the light-emitting device 400 (for example, the material of the light-emitting unit 420 and the material of the second electrode 430) can be directly vapor-deposited on the entire surface, and the second isolation portion 320 can block at least part of the material used to prepare the light-emitting device 400 to separate the material of the light-emitting device 400 between adjacent sub-pixels, so as to form a plurality of light-emitting devices 400 that are spaced apart and located in different isolation openings 301, so that when preparing the light-emitting device 400 of the display panel 10, there is no need to set a mask with high precision, for example, when vapor-depositing part of the material of the light-emitting device 400, there is no need to set a high-precision metal mask (Fine Metal Mask, FMM), thereby effectively reducing the production and preparation cost of the display panel 10.

[0190] In some optional embodiments, the material of the isolation structure 300 may include a conductive material, and the second electrode 430 may be connected to the isolation structure 300 , so that the second electrodes 430 of adjacent light-emitting devices 400 can be electrically connected through the isolation structure 300 to facilitate control of the second electrodes 430 .

[0191] Optionally, the second electrode 430 may be connected to the first isolation portion 310 , so that the second electrodes 430 of adjacent sub-pixels may be electrically connected through the first isolation portion 310 .

[0192] In some optional embodiments, the isolation structure 300 further includes a conductive portion 330 disposed on a side of the first isolation portion 310 facing the substrate 100 . The conductive portion 330 may be disposed protruding from the first isolation portion 310 toward the isolation opening 301 .

[0193] Optionally, the second electrode 430 may be connected to the conductive part 330 .

[0194] In these optional embodiments, by arranging the conductive portion 330 to protrude from the first isolation portion 310 toward the isolation opening 301 , the conductive portion 330 can have a larger area and be convenient for connection with the second electrode 430 , thereby facilitating electrical connection between the second electrode 430 and the isolation structure 300 .

[0195] In some optional embodiments, the light-emitting unit 420 may include a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting structure, an electron injection layer (EIL) and an electron transport layer (ETL). The redundant material R may be set with the same material as at least one of the hole injection layer, the hole transport layer, the light-emitting structure, the electron injection layer and the electron transport layer in the light-emitting unit 420. When the redundant material R is also a stacked structure, each film layer structure in the redundant material R may be set with the same material as each film layer structure in the light-emitting unit 420.

[0196] Optionally, the first electrode 410 and the second electrode 430 may be used as pixel electrodes of the display panel 10, one of the first electrode 410 and the second electrode 430 may be used as an anode, and the other may be used as a cathode to drive the light-emitting unit 420 to emit light. In the embodiment of the present application, the first electrode 410 is used as the anode of the display panel 10, and the second electrode 430 is used as the cathode of the display panel 10 for illustration.

[0197] In some optional embodiments, the light-emitting device 400 may further include a light extraction layer CPL (Capping Layer, CPL) arranged on the side of the second electrode 430 away from the substrate 100. The light extraction layer CPL can be used to improve the light-emitting efficiency of the light-emitting device 400, thereby better improving the light-emitting display effect of the light-emitting device 400.

[0198] Optionally, the display panel 10 further includes a redundant light extraction material T located on the side of the redundant material R away from the substrate 100, and the redundant light extraction material T can be set with the same material as the light extraction layer CPL. The redundant light extraction material T set in the gap 10a can also be used to limit the transmission of water vapor to the light-emitting device 400 through the gap 10a, which can better improve the packaging effect of the display panel 10. By setting the redundant light extraction material T and the light extraction layer CPL to the same material, the redundant light extraction material T can be prepared with the light extraction layer CPL using the same preparation equipment, and the redundant light extraction material T can be prepared with the light extraction layer CPL in the same preparation process, thereby better improving the preparation efficiency of the display panel 10.

[0199] For example, during the preparation of the light extraction layer CPL, the material of the light extraction layer CPL that is not removed by etching between the packaging unit 510 and the isolation structure 300 on the side away from the substrate 100 and that is not removed by etching can form a redundant light extraction material T. For example, when the material of the light extraction layer CPL is dry-etched, the etching gas cannot enter the gap 10a well, so that the material of the light extraction layer CPL that is extended between the packaging unit 510 and the isolation structure 300 on the side away from the substrate 100 and that is not easily removed by etching, so that the material of the light extraction layer CPL that remains can form a redundant light extraction material T.

[0200] Among them, when the material of the light extraction layer CPL is dry-etched, compared with wet-etching the material of the light extraction layer CPL (for example, wet-etching the material of the light extraction layer CPL using an etching solution), the etching material (for example, etching gas) used during dry etching is less likely to cause excessive damage to the first encapsulation layer 500 and the isolation structure 300, thereby better improving the encapsulation effect and structural reliability of the display panel 10.

[0201] Optionally, the gap 10a may not be provided with the same material as the second electrode 430. Exemplarily, during the preparation of the second electrode 430, the material of the second electrode 430 between the package unit 510 and the isolation structure 300 extending to the side of the isolation structure 300 away from the substrate 100 can be easily removed. For example, when the material of the second electrode 430 is wet-etched, the etching liquid can easily enter the gap 10a, so that the material of the second electrode 430 between the package unit 510 and the isolation structure 300 extending to the side of the isolation structure 300 away from the substrate 100 can be easily etched and removed, so that the material of the second electrode 430 may not exist in the gap 10a.

[0202] In some embodiments of the present application, there are multiple ways to set the position of the redundant light extraction material T.

[0203] In some optional embodiments, such as Figure 2 As shown, at least a portion of the redundant light extraction material T is located between the redundant material R and the filling structure S.

[0204] Exemplarily, at least part of the redundant light extraction material T may directly cover the surface of the side of the redundant material R away from the substrate 100, and at least part of the filling structure S may be located on the side of the redundant light extraction material T away from the substrate 100. For example, in the process of manufacturing the display panel 10, when the material of the second electrode 430 between the encapsulation unit 510 and the isolation structure 300 extending to the side away from the substrate 100 is etched away, the redundant light extraction material T falls to contact the redundant material R, so that when the filling structure S is subsequently prepared, at least part of the filling structure S can be formed on the side of the redundant light extraction material T away from the substrate 100.

[0205] Figure 3 It is a partial cross-sectional view of a display panel 10 provided in another embodiment of the present application.

[0206] In some optional embodiments, such as Figure 3 As shown, at least part of the redundant light extraction material T may be located on a side of the filling structure S facing away from the substrate 100 .

[0207] Exemplarily, at least part of the filling structure S may be in contact with the surface of the redundant material R on the side away from the substrate 100. For example, during the preparation of the display panel 10, after the material of the second electrode 430 between the encapsulation unit 510 and the isolation structure 300 extending to the side away from the substrate 100 is etched away, the redundant light extraction material T can still have good adhesion with the encapsulation unit 510, so that at least part of the redundant light extraction material T is not easy to fall and contact with the redundant material R, so that when the filling structure S is prepared later, at least part of the filling structure S can be formed between the redundant light extraction material T and the redundant material R.

[0208] In some optional embodiments, a portion of the redundant light extraction material T may directly cover the surface of the redundant material R facing away from the substrate 100 , while another portion of the redundant light extraction material T may be located on the side of the filling structure S facing away from the substrate 100 .

[0209] For ease of description, the following embodiments are described by taking “at least part of the redundant light extraction material T is located between the redundant material R and the filling structure S” as an example.

[0210] In some optional embodiments, the material of the filling structure S includes an organic material, so that during the preparation process of the filling structure S, the material of the filling structure S can have good fluidity, so that the material of the filling structure S can extend into the gap 10a.

[0211] Optionally, the material of the filling structure S may include an organic insulating material to reduce the influence of the filling structure S on signal transmission in the display panel 10 .

[0212] Optionally, the material of the first encapsulation layer 500 may include an inorganic material, so that the first encapsulation layer 500 may have a better encapsulation effect. Exemplarily, the first encapsulation layer 500 may be prepared by a chemical vapor deposition process (Chemical Vapor Deposition, CVD).

[0213] Figure 4 It is a partial cross-sectional view of a display panel 10 provided in yet another embodiment of the present application.

[0214] like Figure 4 As shown, in some optional embodiments, the display panel 10 further includes a second encapsulation layer 600 disposed on a side of the first encapsulation layer 500 away from the substrate 100 , so as to better improve the encapsulation effect of the display panel 10 .

[0215] Optionally, the material of the second encapsulation layer 600 may include an organic material, so that during the preparation process of the display panel 10, the second encapsulation layer 600 may have good fluidity, so that the surface of the second encapsulation layer 600 facing away from the substrate 100 may have good flatness, which can facilitate the formation of subsequent film layers. Exemplarily, the second encapsulation layer 600 may be prepared by inkjet printing technology (Inkjet Printing, IJP).

[0216] Optionally, part of the second encapsulation layer 600 extends into the gap 10a to form a filling structure S, so that the filling structure S can be prepared using the same preparation equipment and in the same preparation process as the second encapsulation layer 600, thereby better improving the preparation efficiency of the display panel 10.

[0217] Optionally, the encapsulation layer may further include a third encapsulation layer 700 located on the side of the second encapsulation layer 600 away from the substrate 100, so as to better improve the encapsulation effect of the display panel 10. Optionally, the material of the third encapsulation layer 700 may include an inorganic material, so that the third encapsulation layer 700 can better reduce the influence of water vapor on the operation of the light-emitting device 400. Exemplarily, the third encapsulation layer 700 can be prepared by a chemical vapor deposition process.

[0218] In some optional embodiments, the isolation opening 301 includes a first opening 301a and a second opening 301b, and the light-emitting device 400 includes a first type of device 401 arranged corresponding to the first opening 301a and a second type of device 402 arranged corresponding to the second opening 301b, and the light-emitting colors of the first type of device 401 and the second type of device 402 are different, so as to facilitate the realization of color light-emitting display of the display panel 10.

[0219] Optionally, the first type device 401 disposed corresponding to the first opening 301a may mean that the first type device 401 may be at least partially located in the first opening 301a. Optionally, the second type device 402 disposed corresponding to the second opening 301b may mean that the second type device 402 may be at least partially located in the second opening 301b.

[0220] Optionally, the isolation opening 301 further includes a third opening 301c, and the light-emitting device 400 includes a third type device 403 arranged corresponding to the third opening 301c. The light-emitting colors of the first type device 401, the second type device 402 and the third type device 403 are different from each other, so as to further facilitate the color light-emitting display of the display panel 10.

[0221] Optionally, the third type device 403 disposed corresponding to the third opening 301c may mean that the third type device 403 may be at least partially located in the third opening 301c.

[0222] For example, the light emitting color of the first type device 401 may be blue, the light emitting color of the second type device 402 may be green, and the light emitting color of the third type device 403 may be red.

[0223] In some optional embodiments, there may be a plurality of packaging units 510 , and adjacent packaging units 510 may be spaced apart, so that each packaging unit 510 can be used to relatively independently package each light-emitting device 400 .

[0224] Optionally, the packaging unit 510 may include a first unit 511 disposed on a side of the first type device 401 away from the substrate 100, a second unit 512 disposed on a side of the second type device 402 away from the substrate 100, and a third unit 513 disposed on a side of the third type device 403 away from the substrate 100. The first unit 511 may be used to package the first type device 401 relatively independently, the second unit 512 may be used to package the second type device 402 relatively independently, and the third unit 513 may be used to package the third type device 403 relatively independently.

[0225] Optionally, there may be a plurality of redundant materials R, and adjacent redundant materials R are spaced apart. Each redundant material R may be located in a gap 10a under a different packaging unit 510, so that each redundant material R can be used to limit the transfer of water vapor in each gap 10a.

[0226] Optionally, the filling structure S may be located between the redundant material R and the packaging unit 510 , and the filling structure S contacts the surface of the packaging unit 510 facing the isolation structure 300 , so as to improve the packaging effect and structural reliability of the display panel 10 .

[0227] Optionally, part of the filling structure S extends between adjacent packaging units 510 , and / or part of the filling structure S extends between adjacent redundant materials R, which can further improve the structural reliability of the display panel 10 .

[0228] Optionally, the redundant material R may include a first type material R1 located in the gap 10a between the first unit 511 and the isolation structure 300 , and the first type material R1 may be used to limit the transfer of water vapor to the first type device 401 through the gap 10a between the first unit 511 and the isolation structure 300 .

[0229] Optionally, the first type of material R1 can be set with the same material as the light-emitting unit 420 of the first type of device 401, so that the first type of material R1 and the light-emitting unit 420 of the first type of device 401 can be prepared using the same preparation equipment, and the first type of material R1 and the light-emitting unit 420 of the first type of device 401 can be prepared in the same preparation process, thereby greatly improving the preparation efficiency of the display panel 10.

[0230] Optionally, the redundant material R may include a second type material R2 located in the gap 10 a between the second unit 512 and the isolation structure 300 , and the second type material R2 may be used to limit the transfer of water vapor to the second type device 402 through the gap 10 a between the second unit 512 and the isolation structure 300 .

[0231] Optionally, the second material R2 can be set with the same material as the light-emitting unit 420 of the second type device 402, so that the second material R2 and the light-emitting unit 420 of the second type device 402 can be prepared using the same preparation equipment, and the second material R2 and the light-emitting unit 420 of the second type device 402 can be prepared in the same preparation process, thereby greatly improving the preparation efficiency of the display panel 10.

[0232] Optionally, the redundant material R may include a third type material R3 located in the gap 10a between the third unit 513 and the isolation structure 300 , and the third type material R3 may be used to limit the transfer of water vapor to the third type device 403 through the gap 10a between the third unit 513 and the isolation structure 300 .

[0233] Optionally, the third material R3 can be set with the same material as the light-emitting unit 420 of the third device 403, so that the third material R3 and the light-emitting unit 420 of the third device 403 can be prepared using the same preparation equipment, and the third material R3 and the light-emitting unit 420 of the third device 403 can be prepared in the same preparation process, thereby greatly improving the preparation efficiency of the display panel 10.

[0234] See also Figures 1 to 4The embodiment of the first aspect of the present application also provides a display panel 10, including: a substrate 100; an isolation structure 300, which is arranged on one side of the substrate 100 and encloses a plurality of isolation openings 301; a light-emitting device 400, at least part of which is located in the isolation opening 301, and in the direction away from the substrate 100, the light-emitting device 400 includes a first electrode 410, a light-emitting unit 420, a second electrode 430 and a light extraction layer CPL stacked in sequence; a first encapsulation layer 500, including an encapsulation unit 510 arranged on the side of the light-emitting device 400 away from the substrate 100, and the encapsulation unit 510 partially extends to the side of the isolation structure 300 away from the substrate 100 and has a gap 10a between the isolation structure 300; a redundant material R, which is arranged in the gap 10a and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit 420; a redundant light extraction material T, which is arranged in the gap 10a and is located on the side of the redundant material R away from the substrate 100, and the redundant light extraction material T is arranged with the same material as the light extraction layer CPL.

[0235] In a display panel 10 provided in an embodiment of the present application, the display panel 10 includes a substrate 100, an isolation structure 300, a light-emitting device 400, a first encapsulation layer 500, a redundant material R, and a redundant light extraction material T. The isolation structure 300 is disposed on one side of the substrate 100 and encloses a plurality of isolation openings 301, at least part of the structure of the light-emitting device 400 is located in the isolation opening 301, and the isolation structure 300 can be used to participate in dividing the sub-pixels of the display panel 10. The first encapsulation layer 500 includes an encapsulation unit 510 disposed on the side of the light-emitting device 400 away from the substrate 100, and the encapsulation unit 510 can be used to encapsulate the light-emitting device 400. The encapsulation unit 510 can partially extend to the side of the isolation structure 300 away from the substrate 100, which can better improve the encapsulation path of the encapsulation unit 510 and improve the encapsulation effect of the encapsulation unit 510.

[0236] There is a gap 10a between the encapsulation unit 510 extending to the side of the isolation structure 300 away from the substrate 100 and the isolation structure 300, and the redundant material R is arranged in the gap 10a, so that the redundant material R can be used to limit the transmission of water vapor to the light-emitting device 400 through the gap 10a, which can well improve the encapsulation effect of the display panel 10. In the direction away from the substrate 100, the light-emitting device 400 includes a first electrode 410, a light-emitting unit 420 and a second electrode 430 stacked in sequence. By setting the redundant material R and at least part of the film layer in at least part of the light-emitting unit 420 to be the same material, the redundant material R can be prepared with at least part of the light-emitting unit 420 using the same preparation equipment, and the redundant material R can be prepared with at least part of the light-emitting unit 420 in the same preparation process, so that the preparation efficiency of the display panel 10 can be well improved.

[0237] The redundant light extraction material T disposed in the gap 10a can also be used to limit the transmission of water vapor through the gap 10a to the light-emitting device 400, which can effectively improve the packaging effect of the display panel 10. By arranging the redundant light extraction material T and the light extraction layer CPL to be made of the same material, the redundant light extraction material T and the light extraction layer CPL can be prepared using the same preparation equipment, and the redundant light extraction material T and the light extraction layer CPL can be prepared in the same preparation process, thereby effectively improving the preparation efficiency of the display panel 10.

[0238] Optionally, a display panel 10 provided in an embodiment of the first aspect of the present application may be the display panel 10 in any of the aforementioned embodiments. Therefore, a display panel 10 provided in an embodiment of the present application may have the structure and beneficial effects of the display panel 10 in any of the aforementioned embodiments, and the present application will not go into details therein.

[0239] For example, the substrate 100 may be the substrate 100 in any of the foregoing embodiments. For example, the light-emitting device 400 may be the light-emitting device 400 in any of the foregoing embodiments, and the light-emitting device 400 may include the first electrode 410, the light-emitting unit 420, the second electrode 430, and the light extraction layer CPL in any of the foregoing embodiments. Exemplarily, the light-emitting device 400 may include the first type device 401, the second type device 402, and the third type device 403 in any of the foregoing embodiments. For example, the isolation structure 300 may be the isolation structure 300 in any of the foregoing embodiments, and the isolation structure 300 may enclose the isolation opening 301 in any of the foregoing embodiments, and the isolation structure 300 may include the first isolation portion 310, the second isolation portion 320, and the conductive portion 330 in any of the foregoing embodiments. For example, the redundant material R may be the redundant material R in any of the foregoing embodiments. For example, the redundant light extraction material T may be the redundant light extraction material T in any of the foregoing embodiments.

[0240] Optionally, the display panel 10 may further include the filling structure S described in any of the aforementioned embodiments.

[0241] See also Figures 1 to 4The embodiment of the first aspect of the present application further provides a display panel 10, comprising: a substrate 100; an isolation structure 300, which is arranged on one side of the substrate 100 and encloses a plurality of isolation openings 301; a light-emitting device 400, at least part of which is located in the isolation opening 301, and in a direction away from the substrate 100, the light-emitting device 400 comprises a first electrode 410, a light-emitting unit 420 and a second electrode 430 stacked in sequence; a first encapsulation layer 500, comprising an encapsulation unit 510 arranged on a side of the light-emitting device 400 away from the substrate 100, the encapsulation unit 510 partially extending to a side of the isolation structure 300 away from the substrate 100 and having a gap 10a with the isolation structure 300, and the gap 10a is not provided with a material that is the same as the material of the second electrode 430; a redundant material R, which is arranged in the gap 10a and is arranged with the same material as at least part of the film layer in at least part of the light-emitting unit 420.

[0242] In a display panel 10 provided in an embodiment of the present application, the display panel 10 includes a substrate 100, an isolation structure 300, a light-emitting device 400, a first encapsulation layer 500, and a redundant material R. The isolation structure 300 is disposed on one side of the substrate 100 and encloses a plurality of isolation openings 301, at least a portion of the structure of the light-emitting device 400 is located in the isolation opening 301, and the isolation structure 300 can be used to participate in dividing the sub-pixels of the display panel 10. The first encapsulation layer 500 includes an encapsulation unit 510 disposed on a side of the light-emitting device 400 away from the substrate 100, and the encapsulation unit 510 can be used to encapsulate the light-emitting device 400. The encapsulation unit 510 can partially extend to the side of the isolation structure 300 away from the substrate 100, which can better improve the encapsulation path of the encapsulation unit 510 and improve the encapsulation effect of the encapsulation unit 510.

[0243] There is a gap 10a between the encapsulation unit 510 extending to the side of the isolation structure 300 away from the substrate 100 and the isolation structure 300, and the redundant material R is arranged in the gap 10a, so that the redundant material R can be used to limit the transmission of water vapor to the light-emitting device 400 through the gap 10a, which can well improve the encapsulation effect of the display panel 10. In the direction away from the substrate 100, the light-emitting device 400 includes a first electrode 410, a light-emitting unit 420 and a second electrode 430 stacked in sequence. By setting the redundant material R and at least part of the film layer in at least part of the light-emitting unit 420 to be the same material, the redundant material R can be prepared with at least part of the light-emitting unit 420 using the same preparation equipment, and the redundant material R can be prepared with at least part of the light-emitting unit 420 in the same preparation process, so that the preparation efficiency of the display panel 10 can be well improved.

[0244] The redundant light extraction material T disposed in the gap 10a can also be used to limit the transmission of water vapor through the gap 10a to the light-emitting device 400, which can effectively improve the packaging effect of the display panel 10. By arranging the redundant light extraction material T and the light extraction layer CPL to be made of the same material, the redundant light extraction material T and the light extraction layer CPL can be prepared using the same preparation equipment, and the redundant light extraction material T and the light extraction layer CPL can be prepared in the same preparation process, thereby effectively improving the preparation efficiency of the display panel 10.

[0245] By arranging that the gap 10 a is not provided with the same material as the second electrode 430 , the structural reliability of the packaging unit 510 can be improved.

[0246] Exemplarily, affected by the material of the second electrode 430, if the same material as the second electrode 430 exists in the gap 10a, it is easy to affect the structural reliability of the packaging unit 510 at the gap 10a. For example, when the same material as the second electrode 430 exists in the gap 10a, the same material as the second electrode 430 is easily oxidized, thereby easily affecting the structural reliability of the packaging unit 510 at the gap 10a.

[0247] Optionally, a display panel 10 provided in an embodiment of the first aspect of the present application may be the display panel 10 in any of the aforementioned embodiments. Therefore, a display panel 10 provided in an embodiment of the present application may have the structure and beneficial effects of the display panel 10 in any of the aforementioned embodiments, and the present application will not go into details therein.

[0248] For example, the substrate 100 may be the substrate 100 in any of the aforementioned embodiments. For example, the light-emitting device 400 may be the light-emitting device 400 in any of the aforementioned embodiments, and the light-emitting device 400 may include the first electrode 410, the light-emitting unit 420, the second electrode 430 and the light extraction layer CPL in any of the aforementioned embodiments. Exemplarily, the light-emitting device 400 may include the first type device 401, the second type device 402 and the third type device 403 in any of the aforementioned embodiments. For example, the isolation structure 300 may be the isolation structure 300 in any of the aforementioned embodiments, and the isolation structure 300 may enclose the isolation opening 301 in any of the aforementioned embodiments, and the isolation structure 300 may include the first isolation portion 310, the second isolation portion 320 and the conductive portion 330 in any of the aforementioned embodiments. For example, the redundant material R may be the redundant material R in any of the aforementioned embodiments.

[0249] Optionally, the display panel 10 may further include the redundant light extraction material T described in any of the aforementioned embodiments.

[0250] Optionally, the display panel 10 may further include the filling structure S described in any of the aforementioned embodiments.

[0251] Figure 5 is a schematic flow chart of a method for preparing a display panel 10 provided in an embodiment of the present application. Figure 6 to Figure 27 It is a schematic diagram of a preparation process of a method for preparing a display panel 10 provided in an embodiment of the present application.

[0252] The second aspect of the present application provides a method for preparing a display panel 10. The display panel 10 prepared by the preparation method may be the display panel 10 provided by any of the first aspect embodiments described above. Figure 5 Combined with Figures 1 to 4 as well as Figure 6 to Figure 27 , the preparation method comprises:

[0253] Step S10: Figures 6 to 8 As shown, an isolation material layer 12 is formed on a substrate 100 .

[0254] Optionally, the isolation material layer 12 may be used to form the isolation structure 300 in any of the aforementioned embodiments.

[0255] Optionally, in the direction away from the substrate 100, the isolation material layer 12 may include a first isolation material layer 12a, a second isolation material layer 12b and a third isolation material layer 12c stacked in sequence, wherein the first isolation material layer 12a, the second isolation material layer 12b and the third isolation material layer 12c may be used to form the conductive part 330, the first isolation part 310 and the second isolation part 320 in any of the aforementioned embodiments, respectively.

[0256] Step S20: Fig. 9 As shown, the isolation material layer 12 is patterned to form a first opening 301 a.

[0257] Step S30: Fig.10 As shown, the first type of light-emitting material E1, the first conductive material D1 and the first packaging material F1 are prepared in sequence on the entire surface.

[0258] Optionally, the first type of light-emitting material E1, the first conductive material D1 and the first packaging material F1 can be respectively used to form the light-emitting unit 420, the second electrode 430 and the first unit 511 of the first type device 401 in any of the aforementioned embodiments.

[0259] Step S40: Fig.11 As shown, a portion of the first packaging material F1 outside the first opening 301 a is removed to form a first unit 511 .

[0260] Step S50: Fig.12a As shown, a portion of the first conductive material D1 outside the first opening 301 a is removed to form a second electrode 430 of the first type device 401 disposed corresponding to the first opening 301 a .

[0261] Step S60: Fig.13 As shown, a dry etching process is used to remove a portion of the first type light-emitting material E1 outside the first opening 301 a to form a light-emitting unit 420 of the first type device 401 disposed corresponding to the first opening 301 a.

[0262] Optionally, using a dry etching process to remove part of the first type luminescent material E1 outside the first opening 301a may refer to using an etching gas to remove part of the first type luminescent material E1 outside the first opening 301a. Exemplarily, oxygen may be used to remove part of the first type luminescent material E1 outside the first opening 301a.

[0263] In the preparation method of the display panel 10 provided in the embodiment of the present application, a dry etching process is used to remove a portion of the first type of light-emitting material E1 outside the first opening 301a. Compared with wet etching of the first type of light-emitting material E1 (for example, wet etching of the first type of light-emitting material E1 using an etching solution), the etching material (for example, etching gas) used during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12, etc.), thereby being able to better improve the structural reliability of the display panel 10.

[0264] In some optional embodiments, before step S10, the following may be included:

[0265] like Figure 6 As shown, a plurality of first electrodes 410 spaced apart are formed on the substrate 100;

[0266] like Figure 7 As shown, a pixel definition material layer 11 is formed on a substrate 100 .

[0267] In this optional embodiment, the pixel definition material layer 11 may be used to participate in forming the pixel definition layer 200 described in any of the aforementioned embodiments.

[0268] Optionally, step S20 may include: patterning the pixel definition material layer 11 to form a pixel opening 220 communicating with the first opening 301 a .

[0269] In some optional embodiments, after step S30, the method further includes: Fig.10 As shown, a first photoresist structure P1 is prepared on the first packaging material F1 and arranged corresponding to the first opening 301 a.

[0270] Optionally, providing the first photoresist structure P1 corresponding to the first opening 301 a may mean that the first photoresist structure P1 may be at least partially located in the first opening 301 a .

[0271] In these optional embodiments, the first photoresist structure P1 can be used to protect part of the first type light-emitting material E1, the first conductive material D1 and the first packaging material F1 below, so that when these film layers are subsequently patterned, the light-emitting unit 420 of the first type device 401, the second electrode 430 of the first type device and the first unit 511 can be formed under the protection of the first photoresist structure P1.

[0272] In some optional embodiments, after step S60, the method further includes: Fig.15 As shown, the first photoresist structure P1 is removed using a dry etching process.

[0273] Optionally, using a dry etching process to remove the first photoresist structure P1 may refer to using an etching gas to remove the first photoresist structure P1. Exemplarily, oxygen may be used to remove the first photoresist structure P1.

[0274] In these optional embodiments, the first photoresist structure P1 is removed by using a dry etching process, so that compared with wet etching of the first photoresist structure P1, the etching material used in the dry etching process is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401 and the first unit 511 formed thereto, etc.), thereby better improving the structural reliability of the display panel 10.

[0275] In some optional embodiments, in step S40 , a dry etching process may be used to remove a portion of the first packaging material F1 outside the first opening 301 a to form the first unit 511 .

[0276] Optionally, using a dry etching process to remove a portion of the first packaging material F1 outside the first opening 301a to form the first unit 511 may refer to using an etching gas to remove a portion of the first packaging material F1 outside the first opening 301a to form the first unit 511. Exemplarily, a fluoride etching gas (e.g., carbon tetrafluoride, nitrogen trifluoride, sulfur hexafluoride, etc.) may be used to remove a portion of the first packaging material F1 outside the first opening 301a to form the first unit 511.

[0277] In these optional embodiments, a dry etching process is used to remove a portion of the first packaging material F1 outside the first opening 301a. Compared with wet etching of the first packaging material F1, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12, etc.), thereby better improving the structural reliability of the display panel 10.

[0278] In some optional embodiments, in step S40: a portion of the first unit 511 extends to the side of the isolation material layer 12 away from the substrate 100 and has a gap 10a between the isolation material layer 12, and a portion of the first type of light-emitting material E1 and a portion of the first conductive material D1 are located in the gap 10a corresponding to the first unit 511.

[0279] Optionally, the gap 10 a corresponding to the first unit 511 may be the gap 10 a between the first unit 511 and the isolation material layer 12 below the first unit 511 .

[0280] In step S60 , a dry etching process may be used to remove a portion of the first type light emitting material E1 outside the first opening 301 a to form a light emitting unit 420 of the first type device 401 disposed corresponding to the first opening 301 a and a redundant material R located in the gap 10 a corresponding to the first unit 511 .

[0281] Optionally, the redundant material R located in the gap 10a corresponding to the first unit 511 may be the first type of material R1 described in any of the aforementioned embodiments.

[0282] In these optional embodiments, the redundant material R located in the gap 10 a corresponding to the first unit 511 can be used to limit the intrusion of water vapor into the first type device 401 , thereby better improving the packaging effect of the display panel 10 .

[0283] In some optional embodiments, step S30 may include: sequentially preparing a first type of light-emitting material E1, a first conductive material D1, a first light extraction material G1 and a first packaging material F1 on the entire surface.

[0284] Optionally, the first light extraction material G1 may be used to participate in forming the light extraction layer CPL of the first type device 401 in any of the aforementioned embodiments.

[0285] After step S40 , the method may include: removing a portion of the first light extraction material G1 outside the first opening 301 a by using a dry etching process to form a light extraction layer CPL of the first type device 401 disposed corresponding to the first opening 301 a .

[0286] Optionally, using a dry etching process to remove the first light extraction material G1 outside the first opening 301a may refer to using an etching gas to remove the first light extraction material G1 outside the first opening 301a. Exemplarily, oxygen may be used to remove the first light extraction material G1 outside the first opening 301a.

[0287] In these optional embodiments, a dry etching process is used to remove part of the first light extraction material G1 outside the first opening 301a. Compared with wet etching of the first light extraction material G1, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12, etc.), thereby better improving the structural reliability of the display panel 10.

[0288] In some optional embodiments, in step S40 , a portion of the first light extraction material G1 may be located in the gap 10 a corresponding to the first unit 511 .

[0289] In the step of using a dry etching process to remove a portion of the first light extraction material G1 outside the first opening 301a to form a light extraction layer CPL of the first type device 401 set corresponding to the first opening 301a: a dry etching process can be used to remove a portion of the first light extraction material G1 outside the first opening 301a to form a light extraction layer CPL of the first type device 401 set corresponding to the first opening 301a and a redundant light extraction material T located in the gap 10a corresponding to the first unit 511.

[0290] In this optional embodiment, the redundant light extraction material T located in the gap 10 a corresponding to the first unit 511 can be used to limit the intrusion of water vapor into the first type device 401 , thereby better improving the packaging effect of the display panel 10 .

[0291] In some optional embodiments, step S50 may include:

[0292] Step S51: Fig.12a As shown, a dry etching process is used to remove a portion of the first conductive material D1 outside the first opening 301 a to form a second electrode 430 of the first type device 401 disposed corresponding to the first opening 301 a.

[0293] Optionally, using a dry etching process to remove a portion of the first conductive material D1 outside the first opening 301a to form the second electrode 430 of the first type device 401 corresponding to the first opening 301a may refer to using an etching gas to remove a portion of the first conductive material D1 outside the first opening 301a to form the second electrode 430 of the first type device 401 corresponding to the first opening 301a. Exemplarily, oxygen may be used to remove a portion of the first conductive material D1 outside the first opening 301a to form the second electrode 430 of the first type device 401 corresponding to the first opening 301a.

[0294] In these optional embodiments, a dry etching process is used to remove a portion of the first conductive material D1 outside the first opening 301a. Compared with wet etching of the first conductive material D1, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12, etc.), thereby better improving the structural reliability of the display panel 10.

[0295] In some optional embodiments, step S51 may include: Fig.12a As shown, a dry etching process is used to remove part of the first conductive material D1 outside the first opening 301a to form a second electrode 430 and a first residual material C1 of the first type device 401 corresponding to the first opening 301a. At least part of the first residual material C1 is located in the gap 10a corresponding to the first unit 511.

[0296] After step S51, the following steps are also included: Fig.14 As shown, the first residual material C1 is removed using a wet etching process.

[0297] Optionally, the step of removing the first residual material C1 by using a wet etching process may be located after step S60 .

[0298] Or optionally, the step of removing the first residual material C1 using a wet etching process may be located before step S60, so that in the step of removing the first residual material C1 using a wet etching process, a relatively complete first type of light-emitting material E1 can be used to protect the underlying film layer. For example, a relatively complete first type of light-emitting material E1 can be used to protect the first electrode 410 and the pixel defining portion 210.

[0299] Optionally, using a wet etching process to remove the first residual material C1 may refer to using an etching solution to remove the first residual material C1. Exemplarily, aluminic acid may be used to remove the first residual material C1.

[0300] In these optional embodiments, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching material is not easy to fully etch and remove the first conductive material D1, so that the remaining first conductive material D1 can form the first residual material C1. For example, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching gas cannot enter the gap 10a well, so that the first conductive material D1 extending to the first unit 511 on the side of the isolation material layer 12 away from the substrate 100 and the isolation material layer 12 is not easy to be etched and removed, so that the portion of the remaining first conductive material D1 can form the first residual material C1. Therefore, the first residual material C1 can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10. Among them, since in the aforementioned embodiment, the first conductive material D1 is first patterned by a dry etching process and then the first residual material C1 is removed by a wet etching process, the duration of the wet etching process in the process of removing the first residual material C1 can be shorter, thereby greatly reducing the duration of the wet etching process in the display panel 10, thereby improving the structural reliability of the display panel 10.

[0301] In some other optional embodiments, step S50 may include:

[0302] Step S51': Figure 12b As shown, a wet etching process is used to remove a portion of the first conductive material D1 outside the first opening 301 a to form a second electrode 430 of the first type device 401 disposed corresponding to the first opening 301 a.

[0303] In this optional embodiment, by using a wet etching process to remove part of the first conductive material D1 outside the first opening 301a, the first conductive material D1 can be etched more fully in step S51'. For example, by using a wet etching process to remove part of the first conductive material D1 outside the first opening 301a, the first residual material C1 described in any of the above embodiments is not easily generated. Therefore, compared with the above embodiment of "first performing a dry etching process on the first conductive material D1 for patterning, and then using a wet etching process to remove the first residual material C1", this optional embodiment can have fewer preparation steps, thereby being able to better improve the preparation efficiency of the display panel 10.

[0304] For ease of description, the following description will take the embodiment of “first performing a dry etching process on the first conductive material D1 for patterning, and then using a wet etching process to remove the first residual material C1 ” as an example.

[0305] In some optional embodiments, the preparation method further comprises: Fig. 9As shown, the isolation material layer 12 is patterned to form a second opening 301 b.

[0306] Optionally, the step of patterning the isolation material layer 12 to form the second opening 301b is located in the step of patterning the isolation material layer 12 to form the first opening 301a, that is, the step of patterning the isolation material layer 12 to form the second opening 301b can be located in step S20, so as to better improve the preparation efficiency of the display panel 10.

[0307] Optionally, step S20 may include: patterning the pixel definition material layer 11 to form a pixel opening 220 communicating with the second opening 301 b .

[0308] In some optional embodiments, step S50 may include: Fig.12a As shown, a dry etching process is used to remove part of the first conductive material D1 outside the first opening 301a to form a second electrode 430 and a first residual material C1 of the first type device 401 corresponding to the first opening 301a, and at least part of the first residual material C1 covers the inner wall of the second opening 301b.

[0309] After the step of removing a portion of the first conductive material D1 outside the first opening 301a by using a dry etching process to form the second electrode 430 of the first type device 401 disposed corresponding to the first opening 301a and the first residual material C1, the following steps may be performed: Fig.14 As shown, the first residual material C1 is removed using a wet etching process.

[0310] Optionally, the step of removing the first residual material C1 by using a wet etching process may be located after step S60 .

[0311] In this optional embodiment, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching material is not easy to fully etch and remove the first conductive material D1, so that the remaining first conductive material D1 can form the first residual material C1. For example, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching gas cannot fully etch and remove the first conductive material D1 at the inner wall of the second opening 301b, so that the portion of the remaining first conductive material D1 can form the first residual material C1 covering the inner wall of the second opening 301b. Therefore, the first residual material C1 covering the inner wall of the second opening 301b can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10 and facilitate the overlap between the second electrode 430 of the second type device 402 formed subsequently and the isolation structure 300. Specifically, since the first residual material C1 is easily oxidized during the preparation process, the first residual material C1 covering the inner wall of the second opening 301b can be more fully etched away by a wet etching process to facilitate the overlap between the second electrode 430 of the second type device 402 to be formed subsequently and the isolation structure 300.

[0312] Among them, since in the aforementioned embodiment, the first conductive material D1 is first patterned by a dry etching process and then the first residual material C1 is removed by a wet etching process, the duration of the wet etching process in the process of removing the first residual material C1 can be shorter, thereby greatly reducing the duration of the wet etching process in the display panel 10, thereby improving the structural reliability of the display panel 10.

[0313] In some optional embodiments, the preparation method further comprises:

[0314] Step S70: Fig.16 As shown, the second type of light emitting material E2, the second conductive material D2 and the second packaging material F2 are prepared in sequence on the entire surface.

[0315] Step S80: Fig.17 As shown, a portion of the second packaging material F2 outside the second opening 301 b is removed to form a second unit 512 .

[0316] Step S90: Fig.18 As shown, a portion of the second conductive material D2 outside the second opening 301 b is removed to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301 b.

[0317] Step S100: Fig.19As shown, a portion of the second type light-emitting material E2 outside the second opening 301 b is removed by a dry etching process to form a light-emitting unit 420 of the second type device 402 arranged corresponding to the second opening 301 b.

[0318] Optionally, the second type of light-emitting material E2, the second conductive material D2 and the second packaging material F2 can be respectively used to participate in forming the light-emitting unit 420 of the second type device 402, the second electrode 430 and the second unit 512 of the second type device 402 in any of the aforementioned embodiments.

[0319] Optionally, using a dry etching process to remove part of the second type luminescent material E2 outside the second opening 301b may refer to using an etching gas to remove part of the second type luminescent material E2 outside the second opening 301b. Exemplarily, oxygen may be used to remove part of the second type luminescent material E2 outside the second opening 301b.

[0320] In these optional embodiments, a dry etching process is used to remove part of the second type of light-emitting material E2 outside the second opening 301b. Compared with wet etching of the second type of light-emitting material E2, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401 and the first unit 511 formed thereto, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0321] In some optional embodiments, after step S70, the method further includes: Fig.16 As shown, a second photoresist structure P2 is prepared on the second packaging material F2 and arranged corresponding to the second opening 301 b.

[0322] Optionally, providing the second photoresist structure P2 corresponding to the second opening 301 b may mean that the second photoresist structure P2 may be at least partially located in the second opening 301 b .

[0323] In these optional embodiments, the second photoresist structure P2 can be used to protect part of the second type of light-emitting material E2, the second conductive material D2 and the second packaging material F2 below, so that when these film layers are subsequently patterned, the light-emitting unit 420 of the second type of device 402, the second electrode 430 of the second type of device 402 and the second unit 512 can be formed under the protection of the second photoresist structure P2.

[0324] In some optional embodiments, after step S100, the method further includes: Fig.21 As shown, the second photoresist structure P2 is removed using a dry etching process.

[0325] Optionally, using a dry etching process to remove the second photoresist structure P2 may refer to using an etching gas to remove the second photoresist structure P2. Exemplarily, oxygen may be used to remove the second photoresist structure P2.

[0326] In these optional embodiments, the second photoresist structure P2 is removed by using a dry etching process, so that compared with wet etching of the second photoresist structure P2, the etching material used in the dry etching process is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0327] In some optional embodiments, in step S80 , a dry etching process may be used to remove a portion of the second packaging material F2 outside the second opening 301 b to form the second unit 512 .

[0328] Optionally, using a dry etching process to remove a portion of the second packaging material F2 outside the second opening 301b to form the second unit 512 may refer to using an etching gas to remove a portion of the second packaging material F2 outside the second opening 301b to form the second unit 512. Exemplarily, a fluoride etching gas (e.g., carbon tetrafluoride, nitrogen trifluoride, sulfur hexafluoride, etc.) may be used to remove a portion of the second packaging material F2 outside the second opening 301b to form the second unit 512.

[0329] In these optional embodiments, a dry etching process is used to remove part of the second packaging material F2 outside the second opening 301b. Compared with wet etching of the second packaging material F2, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401 and the first unit 511 formed therewith, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0330] In some optional embodiments, in step S80: a portion of the second unit 512 extends to the side of the isolation material layer 12 away from the substrate 100 and has a gap 10a with the isolation material layer 12, and a portion of the second type of light-emitting material E2 and a portion of the second conductive material D2 are located in the gap 10a corresponding to the second unit 512.

[0331] Optionally, the gap 10 a corresponding to the second unit 512 may be the gap 10 a between the second unit 512 and the isolation material layer 12 below the second unit 512 .

[0332] In step S100 , a dry etching process may be used to remove a portion of the second type light emitting material E2 outside the second opening 301b to form a light emitting unit 420 of the second type device 402 disposed corresponding to the second opening 301b and a redundant material R located in the gap 10a corresponding to the second unit 512 .

[0333] Optionally, the redundant material R located in the gap 10a corresponding to the second unit 512 may be the second type of material R2 described in any of the aforementioned embodiments.

[0334] In these optional embodiments, the redundant material R located in the gap 10 a corresponding to the second unit 512 can be used to limit the intrusion of water vapor into the second type device 402 , thereby better improving the packaging effect of the display panel 10 .

[0335] In some optional embodiments, step S70 may include: sequentially preparing the second type of light emitting material E2, the second conductive material D2, the second light extraction material G2 and the second encapsulation material F2 on the entire surface.

[0336] Optionally, the second light extraction material G2 may be used to participate in forming the light extraction layer CPL of the second type device 402 in any of the aforementioned embodiments.

[0337] After step S80 , the method may include: removing a portion of the second light extraction material G2 outside the second opening 301 b by using a dry etching process to form a light extraction layer CPL of the second type device 402 disposed corresponding to the second opening 301 b .

[0338] Optionally, using a dry etching process to remove the second light extraction material G2 outside the second opening 301b may refer to using an etching gas to remove the second light extraction material G2 outside the second opening 301b. Exemplarily, oxygen may be used to remove the second light extraction material G2 outside the first opening 301a.

[0339] In these optional embodiments, a dry etching process is used to remove part of the second light extraction material G2 outside the second opening 301b. Compared with wet etching of the second light extraction material G2, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401 and the first unit 511 formed thereto, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0340] In some optional embodiments, in step S80 , a portion of the second light extraction material G2 may be located in the gap 10 a corresponding to the second unit 512 .

[0341] In the step of using a dry etching process to remove a portion of the second light extraction material G2 outside the second opening 301b to form a light extraction layer CPL of the second type device 402 set corresponding to the second opening 301b: a dry etching process can be used to remove a portion of the second light extraction material G2 outside the second opening 301b to form a light extraction layer CPL of the second type device 402 set corresponding to the second opening 301b and a redundant light extraction material T located in the gap 10a corresponding to the second unit 512.

[0342] In this optional embodiment, the redundant light extraction material T located in the gap 10 a corresponding to the second unit 512 can be used to limit the intrusion of water vapor into the second type device 402 , thereby better improving the packaging effect of the display panel 10 .

[0343] In some optional embodiments, step S90 may include:

[0344] Step S91: Fig.18 As shown, a dry etching process is used to remove a portion of the second conductive material D2 outside the second opening 301 b to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301 b.

[0345] Optionally, using a dry etching process to remove a portion of the second conductive material D2 outside the second opening 301b to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301b may refer to using an etching gas to remove a portion of the second conductive material D2 outside the second opening 301b to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301b. Exemplarily, oxygen may be used to remove a portion of the second conductive material D2 outside the second opening 301b to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301b.

[0346] In these optional embodiments, a dry etching process is used to remove a portion of the second conductive material D2 outside the second opening 301b. Compared with wet etching of the second conductive material D2, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401 and the first unit 511 formed therewith, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0347] In some optional embodiments, step S91 may include: using a dry etching process to remove a portion of the second conductive material D2 outside the second opening 301b to form a second electrode 430 and a second residual material C2 of the second type device 402 arranged corresponding to the second opening 301b, at least a portion of the second residual material C2 is located in the gap 10a corresponding to the second unit 512.

[0348] After step S91, the following steps may also be included: Fig. 20 As shown, the second residual material C2 is removed using a wet etching process.

[0349] Optionally, the step of removing the second residual material C2 by using a wet etching process may be located after step S100 .

[0350] Or optionally, the step of removing the second residual material C2 using a wet etching process may be located before step S100, so that in the step of removing the second residual material C2 using a wet etching process, a relatively complete second type of light-emitting material E2 can be used to protect the underlying film layer. For example, a relatively complete second type of light-emitting material E2 can be used to protect the first electrode 410 and the pixel defining portion 210.

[0351] Optionally, using a wet etching process to remove the second residual material C2 may refer to using an etching solution to remove the second residual material C2. Exemplarily, aluminic acid may be used to remove the second residual material C2.

[0352] In these optional embodiments, when the dry etching process is used to remove the portion of the second conductive material D2 outside the second opening 301b, the etching material is not easy to fully etch and remove the second conductive material D2, so that the remaining second conductive material D2 can form the second residual material C2. For example, when the dry etching process is used to remove the portion of the second conductive material D2 outside the second opening 301b, the etching gas cannot enter the gap 10a well, so that the second conductive material D2 extending to the second unit 512 on the side of the isolation material layer 12 away from the substrate 100 and the isolation material layer 12 is not easy to be etched and removed, so that the remaining second conductive material D2 can form the second residual material C2. Therefore, the second residual material C2 can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10. Among them, since in the aforementioned embodiment, the second conductive material D2 is first patterned by a dry etching process and then the second residual material C2 is removed by a wet etching process, the duration of the wet etching process in the process of removing the second residual material C2 can be shorter, thereby greatly reducing the duration of the wet etching process in the display panel 10, thereby improving the structural reliability of the display panel 10.

[0353] In some other optional embodiments, step S90 may include:

[0354] Step S91 ′ (not shown): using a wet etching process to remove a portion of the second conductive material D2 outside the second opening 301 b to form a second electrode 430 of the second type device 402 disposed corresponding to the second opening 301 b .

[0355] In this optional embodiment, by using a wet etching process to remove part of the second conductive material D2 outside the second opening 301b, the second conductive material D2 can be etched more fully in step S91'. For example, by using a wet etching process to remove part of the second conductive material D2 outside the second opening 301b, it is not easy to generate the second residual material C2 described in any of the above embodiments. Therefore, compared with the above embodiment of "first performing a dry etching process on the second conductive material D2 for patterning, and then using a wet etching process to remove the second residual material C2", this optional embodiment can have fewer preparation steps, so that the preparation efficiency of the display panel 10 can be better improved.

[0356] For ease of description, the following description will take the embodiment of “first performing a dry etching process on the second conductive material D2 for patterning, and then using a wet etching process to remove the second residual material C2” as an example.

[0357] In some optional embodiments, the preparation method further comprises: Fig. 9 As shown, the isolation material layer 12 is patterned to form a third opening 301c.

[0358] Optionally, the step of patterning the isolation material layer 12 to form a third opening 301c is located in the step of patterning the isolation material layer 12 to form the first opening 301a, and / or the step of patterning the isolation material layer 12 to form the third opening 301c is located in the step of patterning the isolation material layer 12 to form the second opening 301b. For example, the step of patterning the isolation material layer 12 to form the third opening 301c may be located in step S20, so as to better improve the preparation efficiency of the display panel 10.

[0359] Alternatively, the step of patterning the isolation material layer 12 to form the third opening 301 c may be performed after the step of patterning the isolation material layer 12 to form the first opening 301 a and the second opening 301 b .

[0360] For the convenience of description, the following embodiments are described by taking “the step of patterning the isolation material layer 12 to form the third opening 301 c may be located in step S20 ” as an example.

[0361] Optionally, the isolation structure 300 described in any of the above embodiments may be formed after the first opening 301a, the second opening 301b and the third opening 301c are prepared. For example, the isolation structure 300 may be formed in the step of patterning the isolation material layer 12 to form the third opening 301c.

[0362] Optionally, step S20 may include: patterning the pixel definition material layer 11 to form a pixel opening 220 communicating with the third opening 301 c .

[0363] In some optional embodiments, step S50 may include: Fig.12a As shown, a dry etching process is used to remove part of the first conductive material D1 outside the first opening 301a to form a second electrode 430 and a first residual material C1 of the first type device 401 corresponding to the first opening 301a, and at least part of the first residual material C1 covers the inner wall of the third opening 301c.

[0364] After the step of removing a portion of the first conductive material D1 outside the first opening 301a by using a dry etching process to form the second electrode 430 of the first type device 401 disposed corresponding to the first opening 301a and the first residual material C1, the following steps may be performed: Fig.14 As shown, the first residual material C1 is removed using a wet etching process.

[0365] Optionally, the step of removing the first residual material C1 by using a wet etching process may be located after step S60 .

[0366] In this optional embodiment, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching material is not easy to fully etch and remove the first conductive material D1, so that the remaining first conductive material D1 can form the first residual material C1. For example, when the dry etching process is used to remove the portion of the first conductive material D1 outside the first opening 301a, the etching gas cannot fully etch and remove the first conductive material D1 at the inner wall of the third opening 301c, so that the portion of the remaining first conductive material D1 can form the first residual material C1 covering the inner wall of the third opening 301c. Therefore, the first residual material C1 covering the inner wall of the third opening 301c can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10 and facilitate the overlap between the second electrode 430 of the third type device 403 formed subsequently and the isolation structure 300. Specifically, since the first residual material C1 is easily oxidized during the preparation process, the first residual material C1 covering the inner wall of the third opening 301c can be more fully etched away by a wet etching process to facilitate the overlap between the second electrode 430 of the third type device 403 and the isolation structure 300 formed subsequently.

[0367] In some optional embodiments, step S90 may include: Fig.18As shown, a dry etching process is used to remove part of the second conductive material D2 outside the second opening 301b to form a second electrode 430 and a second residual material C2 of the second type device 402 corresponding to the second opening 301b, and at least part of the second residual material C2 covers the inner wall of the third opening 301c.

[0368] After the step of removing the portion of the second conductive material D2 outside the second opening 301b by using a dry etching process to form the second electrode 430 of the second type device 402 disposed corresponding to the second opening 301b and the second residual material C2 may include: Fig. 20 As shown, the second residual material C2 is removed using a wet etching process.

[0369] Optionally, the step of removing the second residual material C2 by using a wet etching process may be located after step S100 .

[0370] In this optional embodiment, when the dry etching process is used to remove the part of the second conductive material D2 outside the second opening 301b, the etching material is not easy to fully etch and remove the second conductive material D2, so that the remaining second conductive material D2 can form the second residual material C2. For example, when the dry etching process is used to remove the part of the second conductive material D2 outside the second opening 301b, the etching gas cannot fully etch and remove the second conductive material D2 at the inner wall of the third opening 301c, so that the part of the remaining second conductive material D2 can form the second residual material C2 covering the inner wall of the third opening 301c. Therefore, the second residual material C2 covering the inner wall of the third opening 301c can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10 and facilitate the overlap between the second electrode 430 of the third type device 403 formed subsequently and the isolation structure 300. Specifically, since the second residual material C2 is easily oxidized during the preparation process, the second residual material C2 covering the inner wall of the third opening 301c can be more fully etched away by a wet etching process to facilitate the overlap between the second electrode 430 of the third type device 403 to be formed subsequently and the isolation structure 300.

[0371] In some optional embodiments, the preparation method further comprises:

[0372] Step S110: Fig. 22 As shown, the third type of light-emitting material E3, the third conductive material D3 and the third packaging material F3 are prepared in sequence on the entire surface.

[0373] Step S120: Fig.23 As shown, a portion of the third packaging material F3 outside the third opening 301 c is removed to form a third unit 513 .

[0374] Step S130: Fig.24 As shown, part of the third conductive material D3 outside the third opening 301 c is removed to form a second electrode 430 of the third type device 403 arranged corresponding to the third opening 301 c.

[0375] Step S140: Fig.25 As shown, a dry etching process is used to remove a portion of the third type light-emitting material E3 outside the third opening 301c to form a light-emitting unit 420 of the third type device 403 arranged corresponding to the third opening 301c.

[0376] Optionally, the third type of light-emitting material E3, the third conductive material D3 and the third packaging material F3 can be respectively used to participate in forming the light-emitting unit 420 of the third type device 403, the second electrode 430 and the third unit 513 of the third type device 403 in any of the aforementioned embodiments.

[0377] Optionally, using a dry etching process to remove part of the third type light emitting material E3 outside the third opening 301c may refer to using an etching gas to remove part of the third type light emitting material E3 outside the third opening 301c. Exemplarily, oxygen may be used to remove part of the third type light emitting material E3 outside the third opening 301c.

[0378] In these optional embodiments, a dry etching process is used to remove part of the third type of light-emitting material E3 outside the third opening 301c. Compared with wet etching of the third type of light-emitting material E3, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0379] In some optional embodiments, after step S110, the following steps may be further included: Fig. 22 As shown, a third photoresist structure P3 is prepared on the third packaging material F3 and arranged corresponding to the third opening 301c.

[0380] Optionally, providing a third photoresist structure P3 corresponding to the third opening 301c may mean that the third photoresist structure P3 may be at least partially located in the third opening 301c.

[0381] In these optional embodiments, the third photoresist structure P3 can be used to protect part of the third type of light-emitting material E3, the third conductive material D3 and the third packaging material F3 below, so that when these film layers are subsequently patterned, the light-emitting unit 420 of the third type of device 403, the second electrode 430 of the third type of device 403 and the third unit 513 can be formed under the protection of the third photoresist structure P3.

[0382] In some optional embodiments, after step S140, the following steps are further included: Fig. 27 As shown, the third photoresist structure P3 is removed using a dry etching process.

[0383] Optionally, using a dry etching process to remove the third photoresist structure P3 may refer to using an etching gas to remove the third photoresist structure P3. Exemplarily, oxygen may be used to remove the third photoresist structure P3.

[0384] In these optional embodiments, the third photoresist structure P3 is removed by using a dry etching process, so that compared with wet etching of the third photoresist structure P3, the etching material used in dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0385] In some optional embodiments, in step S120 , a dry etching process may be used to remove a portion of the third packaging material F3 outside the third opening 301 c to form the third unit 513 .

[0386] Optionally, using a dry etching process to remove a portion of the third packaging material F3 outside the third opening 301c to form the third unit 513 may refer to using an etching gas to remove a portion of the third packaging material F3 outside the third opening 301c to form the third unit 513. Exemplarily, a fluoride etching gas (e.g., carbon tetrafluoride, nitrogen trifluoride, sulfur hexafluoride, etc.) may be used to remove a portion of the third packaging material F3 outside the third opening 301c to form the third unit 513.

[0387] In these optional embodiments, a dry etching process is used to remove part of the third packaging material F3 outside the third opening 301c. Compared with wet etching of the third packaging material F3, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0388] In some optional embodiments, in step S120: a portion of the third unit 513 extends to the side of the isolation material layer 12 away from the substrate 100 and has a gap 10a with the isolation material layer 12, and a portion of the third type of light-emitting material E3 and a portion of the third conductive material D3 are located in the gap 10a corresponding to the third unit 513.

[0389] Optionally, the gap 10 a corresponding to the third unit 513 may be the gap 10 a between the third unit 513 and the isolation structure 300 below the third unit 513 .

[0390] In step S140 , a dry etching process may be used to remove a portion of the third type light emitting material E3 outside the third opening 301c to form a light emitting unit 420 of the third type device 403 disposed corresponding to the third opening 301c and a redundant material R located in the gap 10a corresponding to the third unit 513 .

[0391] Optionally, the redundant material R located in the gap 10a corresponding to the third unit 513 may be the third type of material R3 described in any of the aforementioned embodiments.

[0392] In these optional embodiments, the redundant material R located in the gap 10 a corresponding to the third unit 513 can be used to limit the intrusion of water vapor into the third type device 403 , thereby better improving the packaging effect of the display panel 10 .

[0393] In some optional embodiments, step S110 may include: sequentially preparing a third type of light-emitting material E3, a third conductive material D3, a third light extraction material G3 and a third packaging material F3 on the entire surface.

[0394] Optionally, the third light extraction material G3 may be used to participate in forming the light extraction layer CPL of the third type device 403 in any of the aforementioned embodiments.

[0395] After step S120 , the method may include: removing a portion of the third light extraction material G3 outside the third opening 301 c by using a dry etching process to form a light extraction layer CPL of the third type device 403 disposed corresponding to the third opening 301 c .

[0396] Optionally, using a dry etching process to remove a portion of the third light extraction material G3 outside the third opening 301c may refer to using an etching gas to remove a portion of the third light extraction material G3 outside the third opening 301c. Exemplarily, oxygen may be used to remove a portion of the third light extraction material G3 outside the third opening 301c.

[0397] In these optional embodiments, a dry etching process is used to remove part of the third light extraction material G3 outside the third opening 301c. Compared with wet etching of the third light extraction material G3, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0398] In some optional embodiments, in step S120 , part of the third light extraction material G3 may be located in the gap 10 a corresponding to the third unit 513 .

[0399] In the step of using a dry etching process to remove a portion of the third light extraction material G3 outside the third opening 301c to form a light extraction layer CPL of the third type device 403 set corresponding to the third opening 301c: a dry etching process can be used to remove a portion of the third light extraction material G3 outside the third opening 301c to form a light extraction layer CPL of the third type device 403 set corresponding to the third opening 301c and a redundant light extraction material T located in the gap 10a corresponding to the third unit 513.

[0400] In this optional embodiment, the redundant light extraction material T located in the gap 10 a corresponding to the third unit 513 can be used to limit the intrusion of water vapor into the third type device 403 , thereby better improving the packaging effect of the display panel 10 .

[0401] In some optional embodiments, step S130 may include:

[0402] Step S131: Fig.24 As shown, a portion of the third conductive material D3 outside the third opening 301 c is removed by a dry etching process to form a second electrode 430 of the third type device 403 arranged corresponding to the third opening 301 c.

[0403] Optionally, using a dry etching process to remove a portion of the third conductive material D3 outside the third opening 301c to form the second electrode 430 of the third type device 403 corresponding to the third opening 301c may refer to using an etching gas to remove a portion of the third conductive material D3 outside the third opening 301c to form the second electrode 430 of the third type device 403 corresponding to the third opening 301c. Exemplarily, oxygen may be used to remove a portion of the third conductive material D3 outside the third opening 301c to form the second electrode 430 of the third type device 403 corresponding to the third opening 301c.

[0404] In these optional embodiments, a dry etching process is used to remove a portion of the third conductive material D3 outside the third opening 301c. Compared with wet etching of the third conductive material D3, the etching material during dry etching is less likely to cause excessive damage to other film layers of the display panel 10 (for example, the isolation material layer 12 and the first type of device 401, the first unit 511, the second type of device 402 and the second unit 512, etc.), thereby better improving the packaging effect and structural reliability of the display panel 10.

[0405] In some optional embodiments, step S131 may include: using a dry etching process to remove a portion of the third conductive material D3 outside the third opening 301c to form a second electrode 430 and a third residual material C3 of the third type device 403 corresponding to the third opening 301c, at least a portion of the third residual material C3 is located in the gap 10a corresponding to the third unit 513.

[0406] After step S131, the following steps may also be included: Fig.26 As shown, the third residual material C3 is removed using a wet etching process.

[0407] Optionally, the step of removing the third residual material C3 by using a wet etching process may be located after step S140 .

[0408] Or optionally, the step of removing the third residual material C3 using a wet etching process may be located before step S140, so that in the step of removing the third residual material C3 using a wet etching process, a relatively complete third type of light-emitting material E3 can be used to protect the underlying film layer. For example, a relatively complete third type of light-emitting material E3 can be used to protect the first electrode 410 and the pixel defining portion 210.

[0409] Optionally, using a wet etching process to remove the third residual material C3 may refer to using an etching solution to remove the third residual material C3. Exemplarily, aluminic acid may be used to remove the third residual material C3.

[0410] In these optional embodiments, when the dry etching process is used to remove the portion of the third conductive material D3 outside the third opening 301c, the etching material is not easy to fully etch and remove the third conductive material D3, so that the remaining third conductive material D3 can form a third residual material C3. For example, when the dry etching process is used to remove the portion of the third conductive material D3 outside the third opening 301c, the etching gas cannot enter the gap 10a well, so that the third conductive material D3 extending to the third unit 513 on the side of the isolation structure 300 away from the substrate 100 and the isolation structure 300 is not easy to be etched and removed, so that the portion of the remaining third conductive material D3 can form a third residual material C3. Therefore, the third residual material C3 can be fully etched and removed by the wet etching process, so as to better improve the structural reliability of the display panel 10. Among them, since in the aforementioned embodiment, the third conductive material D3 is first patterned by a dry etching process and then the third residual material C3 is removed by a wet etching process, the duration of the wet etching process in the process of removing the third residual material C3 can be shorter, thereby greatly reducing the duration of the wet etching process in the display panel 10, thereby improving the structural reliability of the display panel 10.

[0411] In some other optional embodiments, step S90 may include:

[0412] Step S131 ′ (not shown): using a wet etching process to remove a portion of the third conductive material D3 outside the third opening 301 c to form a second electrode 430 of the third type device 403 disposed corresponding to the third opening 301 c.

[0413] In this optional embodiment, by using a wet etching process to remove part of the third conductive material D3 outside the third opening 301c, the third conductive material D3 can be etched more fully in step S131'. For example, by using a wet etching process to remove part of the third conductive material D3 outside the third opening 301c, the third residual material C3 described in any of the above embodiments is not easily generated. Therefore, compared with the above embodiment of "first performing a dry etching process on the third conductive material D3 for patterning, and then using a wet etching process to remove the third residual material C3", this optional embodiment can have fewer preparation steps, so that the preparation efficiency of the display panel 10 can be better improved.

[0414] In some optional embodiments, the isolation material layer 12 may be patterned to form an isolation structure 300 , and the isolation structure 300 may enclose a first opening 301 a , a second opening 301 b , and a third opening 301 c .

[0415] Exemplarily, the isolation material layer 12 may be patterned to form the isolation structure 300 in any of the aforementioned embodiments. The isolation structure 300 may enclose the first opening 301 a , the second opening 301 b , and the third opening 301 c in any of the aforementioned embodiments.

[0416] Specifically, after the first opening 301 a , the second opening 301 b , and the third opening 301 c are prepared, the isolation structure 300 described in any of the above embodiments may be formed.

[0417] Part of the first unit 511 , part of the second unit 512 and part of the third unit 513 extend to a side of the isolation structure 300 away from the substrate 100 and have a gap 10 a between the isolation structure 300 . A redundant material R is disposed in the gap 10 a .

[0418] For example, the first type of material R1 described in any of the aforementioned embodiments may be arranged in the gap 10a between the first unit 511 located on the side of the isolation structure 300 facing away from the substrate 100 and the isolation structure 300, the second type of material R2 described in any of the aforementioned embodiments may be arranged in the gap 10a between the second unit 512 located on the side of the isolation structure 300 facing away from the substrate 100 and the isolation structure 300, and the third type of material R3 described in any of the aforementioned embodiments may be arranged in the gap 10a between the third unit 513 located on the side of the isolation structure 300 facing away from the substrate 100 and the isolation structure 300.

[0419] In some optional embodiments, after step S140, the following steps may be further included:

[0420] Step S150: Fig.28 As shown, a second encapsulation layer 600 is prepared, and at least a portion of the material of the second encapsulation layer 600 extends into the gap 10 a to form a filling structure S.

[0421] Optionally, the material of the second encapsulation layer 600 extends into the gap 10 a between the first unit 511 and the isolation structure 300 , the gap 10 a between the second unit 512 and the isolation structure 300 , and the gap 10 a between the third unit 513 and the isolation structure 300 to form a filling structure S.

[0422] Optionally, the filling structure S may be located on a side of the redundant material R facing away from the substrate 100 .

[0423] In these optional embodiments, the filling structure S can be used to support the packaging unit 510 extending to the side of the isolation structure 300 away from the substrate 100. For example, the filling structure S can be used to support the first unit 511, the second unit 512 and the third unit 513, so that the display panel 10 can have better structural stability.

[0424] The embodiment of the third aspect of the present application provides a display device, which includes the display panel 10 of any of the above-mentioned embodiments, or includes the display panel 10 prepared by the preparation method of any of the above-mentioned embodiments. Since the display device provided by the embodiment of the third aspect of the present application includes the display panel 10 of any of the above-mentioned first aspect, or includes the display panel 10 prepared by the preparation method of any of the above-mentioned second aspect. Therefore, the display device provided by the embodiment of the third aspect of the present application has the beneficial effects of the display panel 10 of any of the above-mentioned first aspect or the display panel 10 prepared by the preparation method of any of the above-mentioned second aspect, which will not be repeated here.

[0425] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.

[0426] According to the embodiments of the present application as above, these embodiments do not describe all the details in detail, nor do they limit the invention to specific embodiments. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can make good use of the present application and the modifications based on the present application. The present application is only limited by the claims and their full scope and equivalents.

Claims

1. A display panel, characterized in that: include: substrate; An isolation structure is disposed on one side of the substrate and encloses a plurality of isolation openings; A light emitting device, at least part of which is located in the isolation opening, and in a direction away from the substrate, the light emitting device comprises a first electrode, a light emitting unit and a second electrode stacked in sequence; A first encapsulation layer, comprising an encapsulation unit disposed on a side of the light-emitting device away from the substrate, wherein the encapsulation unit partially extends to a side of the isolation structure away from the substrate and has a gap between the isolation structure and the side of the isolation structure; A redundant material is disposed in the gap and is disposed with the same material as at least a portion of the film layer in at least a portion of the light-emitting units; The filling structure is arranged in the gap and located at a side of the redundant material away from the substrate, and the material of the filling structure is different from that of the second electrode.

2. The display panel according to claim 1, characterized in that: The material of the filling structure includes organic material; Preferably, the material of the filling structure includes an organic insulating material; Preferably, the gap is not provided with a material that is the same as that of the second electrode.

3. The display panel according to claim 1, characterized in that: The display panel further includes a second encapsulation layer disposed on a side of the first encapsulation layer away from the substrate, and a portion of the second encapsulation layer extends into the gap to form the filling structure.

4. The display panel according to claim 1, characterized in that: Adjacent packaging units are spaced apart, and / or adjacent redundant materials are spaced apart; Preferably, along the thickness direction of the substrate, the filling structure is located between the redundant material and the packaging unit, and the filling structure is in contact with the surface of the packaging unit facing the isolation structure; preferably, part of the filling structure extends between adjacent packaging units, and / or part of the filling structure extends between adjacent redundant materials.

5. The display panel according to claim 1, characterized in that: The isolation opening includes a first opening and a second opening, the light emitting device includes a first type of device arranged corresponding to the first opening and a second type of device arranged corresponding to the second opening, the light emitting colors of the first type of device and the second type of device are different, the packaging unit includes a first unit arranged on a side of the first type of device away from the substrate and a second unit arranged on a side of the second type of device away from the substrate, The redundant material includes a first type of material located in the gap between the first unit and the isolation structure, the first type of material and the light-emitting unit of the first type of device are arranged with the same material, and / or the redundant material includes a second type of material located in the gap between the second unit and the isolation structure, the second type of material and the light-emitting unit of the second type of device are arranged with the same material; Preferably, the isolation opening further includes a third opening, the light emitting device includes a third type of device arranged corresponding to the third opening, the light emitting colors of the first type of device, the second type of device and the third type of device are different from each other, and the packaging unit includes a third unit arranged on a side of the third type of device away from the substrate. The redundant material includes a third type of material located in the gap between the third unit and the isolation structure, and the third type of material is configured with the same material as the light-emitting unit of the third type of device.

6. The display panel according to any one of claims 1 to 5, characterized in that: The light emitting device further comprises a light extraction layer disposed on a side of the second electrode away from the substrate; Preferably, the display panel further comprises a redundant light extraction material located on a side of the redundant material away from the substrate, and the redundant light extraction material and the light extraction layer are provided with the same material; Preferably, along the thickness direction of the substrate, at least part of the redundant light extraction material is located between the redundant material and the filling structure.

7. The display panel according to any one of claims 1 to 5, characterized in that: The isolation structure comprises a first isolation portion and a second isolation portion located at a side of the first isolation portion away from the substrate, the second isolation portion is arranged to protrude from the first isolation portion toward the isolation opening, the packaging unit portion extends to a side of the second isolation portion away from the substrate and has the gap between the second isolation portion and the second isolation portion; Preferably, the material of the isolation structure includes a conductive material, and the second electrode is connected to the isolation structure; Preferably, the isolation structure further comprises a conductive portion disposed on a side of the first isolation portion facing the substrate, and the conductive portion is disposed protruding from the first isolation portion toward the isolation opening.

8. A display panel, characterized in that: include: substrate; An isolation structure is disposed on one side of the substrate and encloses a plurality of isolation openings; A light emitting device, at least part of which is located in the isolation opening, and in a direction away from the substrate, the light emitting device comprises a first electrode, a light emitting unit, a second electrode and a light extraction layer stacked in sequence; A first encapsulation layer, comprising an encapsulation unit disposed on a side of the light-emitting device away from the substrate, wherein the encapsulation unit partially extends to a side of the isolation structure away from the substrate and has a gap therebetween; A redundant material is disposed in the gap and is disposed with the same material as at least a portion of the film layer in at least a portion of the light-emitting units; A redundant light extraction material is disposed in the gap and located on a side of the redundant material away from the substrate. The redundant light extraction material and the light extraction layer are made of the same material.

9. A display panel, characterized in that: include: substrate; An isolation structure is disposed on one side of the substrate and encloses a plurality of isolation openings; A light emitting device, at least part of which is located in the isolation opening, and in a direction away from the substrate, the light emitting device comprises a first electrode, a light emitting unit and a second electrode stacked in sequence; A first encapsulation layer includes an encapsulation unit disposed on a side of the light-emitting device away from the substrate, wherein the encapsulation unit partially extends to a side of the isolation structure away from the substrate and has a gap with the isolation structure, and a material that is the same as that of the second electrode is not disposed in the gap; The redundant material is arranged in the gap and is arranged with the same material as at least a part of the film layer in at least a part of the light-emitting unit.

10. A method for preparing a display panel, characterized in that: include: forming an isolation material layer on the substrate; performing patterning on the isolation material layer to form a first opening; sequentially preparing a first type of light-emitting material, a first conductive material and a first packaging material on the entire surface; removing a portion of the first packaging material outside the first opening to form a first unit; removing a portion of the first conductive material outside the first opening to form a second electrode of the first type of device disposed corresponding to the first opening; A dry etching process is used to remove a portion of the first type of light-emitting material outside the first opening to form a light-emitting unit of the first type of device arranged corresponding to the first opening.

11. The preparation method according to claim 10, characterized in that: In the step of removing a portion of the first packaging material outside the first opening to form a first unit: Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light-emitting material and part of the first conductive material are located in the gap corresponding to the first unit; In the step of removing a portion of the first type of light-emitting material outside the first opening by using a dry etching process to form a light-emitting unit of the first type of device arranged corresponding to the first opening: The dry etching process is used to remove a portion of the first type of light-emitting material outside the first opening to form a light-emitting unit of the first type of device arranged corresponding to the first opening and a redundant material located in the gap corresponding to the first unit.

12. The preparation method according to claim 10, characterized in that: In the step of sequentially preparing the first type of light-emitting material, the first conductive material and the first packaging material on the entire surface: sequentially preparing the first type of light-emitting material, the first conductive material, the first light extraction material and the first packaging material on the entire surface; After the step of removing the portion of the first packaging material outside the first opening to form a first unit, the method further comprises: Using a dry etching process to remove a portion of the first light extraction material outside the first opening to form a light extraction layer of a first type of device arranged corresponding to the first opening; Preferably, in the step of removing a portion of the first packaging material outside the first opening to form a first unit: Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light-emitting material, part of the first conductive material and part of the first light extraction material are located in the gap corresponding to the first unit; In the step of removing a portion of the first light extraction material outside the first opening by using a dry etching process to form a light extraction layer of a first type of device arranged corresponding to the first opening: The dry etching process is used to remove a portion of the first light extraction material outside the first opening to form a light extraction layer of a first type of device arranged corresponding to the first opening and a redundant light extraction material located in the gap corresponding to the first unit.

13. The preparation method according to claim 10, characterized in that: In the step of removing a portion of the first packaging material outside the first opening to form a first unit: Using a dry etching process to remove a portion of the first packaging material outside the first opening to form the first unit; Preferably, after the step of sequentially preparing the first type of light-emitting material, the first conductive material and the first packaging material on the entire surface, the method further includes: Preparing a first photoresist structure corresponding to the first opening on the first packaging material; After the step of removing a portion of the first type of light-emitting material outside the first opening by using a dry etching process to form a light-emitting unit of the first type of device arranged corresponding to the first opening, the method further includes: The first photoresist structure is removed by using a dry etching process.

14. The preparation method according to claim 10, characterized in that: The step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes: Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type of device arranged corresponding to the first opening, or using a wet etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type of device arranged corresponding to the first opening; Preferably, in the step of removing a portion of the first packaging material outside the first opening to form a first unit: Part of the first unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the first type of light-emitting material and the first conductive material are located in the gap corresponding to the first unit; The step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device arranged corresponding to the first opening includes: Using the dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type of device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material is located in the gap corresponding to the first unit; After the step of removing the portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method further includes: removing the first residual material using a wet etching process; Preferably, the step of removing the first residual material using a wet etching process is located after the step of removing a portion of the first type of light-emitting material outside the first opening using a dry etching process to form a light-emitting unit of the first type of device corresponding to the first opening.

15. The preparation method according to any one of claims 10 to 14, characterized in that: The preparation method further comprises: performing patterning on the isolation material layer to form a second opening; sequentially preparing a second type of light-emitting material, a second conductive material and a second packaging material on the entire surface; removing a portion of the second packaging material outside the second opening to form a second unit; removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device arranged corresponding to the second opening; Using a dry etching process to remove a portion of the second type of light-emitting material outside the second opening to form a light-emitting unit of the second type of device arranged corresponding to the second opening; Preferably, after the step of sequentially preparing the second type of light-emitting material, the second conductive material and the second packaging material on the entire surface, the method further includes: Preparing a second photoresist structure on the second packaging material corresponding to the second opening; After the step of removing a portion of the second type of light-emitting material outside the second opening by using a dry etching process to form a light-emitting unit of the second type of device arranged corresponding to the second opening, the method further includes: The second photoresist structure is removed by using a dry etching process.

16. The preparation method according to claim 15, characterized in that: The step of patterning the isolation material layer to form the second opening is located in the step of patterning the isolation material layer to form the first opening; Preferably, the step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes: Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type of device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material covers an inner wall of the second opening; After the step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method includes: The first residual material is removed using a wet etching process.

17. The preparation method according to claim 15, characterized in that: In the step of removing a portion of the second packaging material outside the second opening to form a second unit: Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light-emitting material and part of the second conductive material are located in the gap corresponding to the second unit; In the step of removing a portion of the second type of light-emitting material outside the second opening by using a dry etching process to form a light-emitting unit of the second type of device arranged corresponding to the second opening: A dry etching process is used to remove a portion of the second type of light emitting material outside the second opening to form a light emitting unit of the second type of device corresponding to the second opening and a redundant material located in the gap corresponding to the second unit.

18. The preparation method according to claim 15, characterized in that: In the step of sequentially preparing the second type of light-emitting material, the second conductive material and the second packaging material on the entire surface: sequentially preparing the second type of light-emitting material, the second conductive material, the second light extraction material and the second packaging material on the entire surface; After the step of removing the portion of the second packaging material outside the second opening to form a second unit, the method further comprises: Using a dry etching process to remove a portion of the second light extraction material outside the second opening to form a light extraction layer of a second type of device arranged corresponding to the second opening; Preferably, in the step of removing a portion of the second packaging material outside the second opening to form the second unit: Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light emitting material, part of the second conductive material and part of the second light extraction material are located in the gap corresponding to the second unit; In the step of removing a portion of the second light extraction material outside the second opening by using a dry etching process to form a light extraction layer of a second type of device arranged corresponding to the second opening: The dry etching process is used to remove a portion of the second light extraction material outside the second opening to form a light extraction layer of a second type of device arranged corresponding to the second opening and a redundant light extraction material located in the gap corresponding to the second unit.

19. The preparation method according to claim 15, characterized in that: The step of removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device arranged corresponding to the second opening includes: Using a dry etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type of device corresponding to the second opening, or using a wet etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type of device corresponding to the second opening; Preferably, in the step of removing a portion of the second packaging material outside the second opening to form the second unit: Part of the second unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the second type of light-emitting material and the second conductive material are located in the gap corresponding to the second unit; The step of removing a portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device arranged corresponding to the second opening includes: Using the dry etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type of device disposed corresponding to the second opening and a second residual material, wherein at least a portion of the second residual material is located in the gap corresponding to the second unit; After the step of removing the portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device and a second residual material arranged corresponding to the second opening, the method further includes: removing the second residual material using a wet etching process; Preferably, the step of removing the second residual material using a wet etching process is located after the step of removing part of the second type of light-emitting material outside the second opening using a dry etching process to form a light-emitting unit of the second type of device corresponding to the second opening.

20. The preparation method according to claim 15, characterized in that: The preparation method further comprises: performing patterning on the isolation material layer to form a third opening; sequentially preparing a third type of light-emitting material, a third conductive material and a third packaging material on the entire surface; removing a portion of the third packaging material outside the third opening to form a third unit; Removing a portion of the third conductive material outside the third opening to form a second electrode of a third type device disposed corresponding to the third opening; Using a dry etching process to remove a portion of the third type of light-emitting material outside the third opening to form a light-emitting unit of the third type of device arranged corresponding to the third opening; Preferably, after the step of sequentially preparing the third type of light-emitting material, the third conductive material and the third packaging material on the entire surface, the method further includes: Preparing a third photoresist structure on the third packaging material corresponding to the third opening; After the step of removing part of the third type of light emitting material outside the third opening by using a dry etching process to form a light emitting unit of the third type of device arranged corresponding to the third opening, the method further includes: The third photoresist structure is removed using a dry etching process.

21. The preparation method according to claim 20, characterized in that: The step of patterning the isolation material layer to form the third opening is located in the step of patterning the isolation material layer to form the first opening, and / or the step of patterning the isolation material layer to form the third opening is located in the step of patterning the isolation material layer to form the second opening; Preferably, the step of removing a portion of the first conductive material outside the first opening to form a second electrode of the first type device arranged corresponding to the first opening includes: Using a dry etching process to remove a portion of the first conductive material outside the first opening to form a second electrode of the first type of device disposed corresponding to the first opening and a first residual material, wherein at least a portion of the first residual material covers an inner wall of the third opening; After the step of removing a portion of the first conductive material outside the first opening by using a dry etching process to form a second electrode of the first type device disposed corresponding to the first opening and a first residual material, the method includes: removing the first residual material using a wet etching process; Preferably, the step of removing a portion of the second conductive material outside the second opening to form a second electrode of the second type device arranged corresponding to the second opening includes: Using a dry etching process to remove a portion of the second conductive material outside the second opening to form a second electrode of the second type device disposed corresponding to the second opening and a second residual material, wherein at least a portion of the second residual material covers an inner wall of the third opening; After the step of removing the portion of the second conductive material outside the second opening by using a dry etching process to form a second electrode of the second type device and a second residual material arranged corresponding to the second opening, the method includes: The second residual material is removed using a wet etching process.

22. The preparation method according to claim 20, characterized in that: In the step of removing a portion of the third packaging material outside the third opening to form a third unit: Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light emitting material and part of the third conductive material are located in the gap corresponding to the third unit; In the step of removing part of the third type of light-emitting material outside the third opening by using a dry etching process to form a light-emitting unit of the third type of device arranged corresponding to the third opening: A dry etching process is used to remove a portion of the third type of light emitting material outside the third opening to form a light emitting unit of the third type of device arranged corresponding to the third opening and a redundant material located in the gap corresponding to the third unit.

23. The preparation method according to claim 20, characterized in that: In the step of sequentially preparing the third type of light-emitting material, the third conductive material and the third packaging material on the entire surface: sequentially preparing the third type of light-emitting material, the third conductive material, the third light extraction material and the third packaging material on the entire surface; After the step of removing the portion of the third packaging material outside the third opening to form a third unit, the method further comprises: Using a dry etching process to remove a portion of the third light extraction material outside the third opening to form a light extraction layer of a third type of device arranged corresponding to the third opening; Preferably, in the step of removing a portion of the third packaging material outside the third opening to form a third unit: Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light-emitting material, part of the third conductive material and part of the third light extraction material are located in the gap corresponding to the third unit; In the step of removing a portion of the third light extraction material outside the third opening by using a dry etching process to form a light extraction layer of a third type of device arranged corresponding to the third opening: The dry etching process is used to remove a portion of the third light extraction material outside the third opening to form a light extraction layer of a third type of device arranged corresponding to the third opening and a redundant light extraction material located in the gap corresponding to the third unit.

24. The preparation method according to claim 20, characterized in that: The step of removing a portion of the third conductive material outside the second opening to form a second electrode of the third type device arranged corresponding to the third opening includes: Using a dry etching process to remove a portion of the third conductive material outside the third opening to form a second electrode of a third type device arranged corresponding to the third opening, or using a wet etching process to remove a portion of the third conductive material outside the third opening to form a second electrode of the third type device arranged corresponding to the third opening; Preferably, in the step of removing a portion of the third packaging material outside the third opening to form a third unit: Part of the third unit extends to a side of the isolation material layer away from the substrate and has a gap with the isolation material layer, and part of the third type of light emitting material and the third conductive material are located in the gap corresponding to the third unit; The step of removing a portion of the third conductive material outside the third opening by using a dry etching process to form a second electrode of the third type device arranged corresponding to the third opening includes: Using the dry etching process to remove a portion of the third conductive material outside the third opening to form a second electrode of a third type device arranged corresponding to the third opening and a third residual material, at least a portion of the third residual material is located in the gap corresponding to the third unit; After the step of removing the portion of the third conductive material outside the third opening by using a dry etching process to form a second electrode of the third type device and a third residual material arranged corresponding to the third opening, the method further includes: removing the third residual material using a wet etching process; Preferably, the step of removing the third residual material using a wet etching process is located after the step of removing part of the third type of light-emitting material outside the third opening using a dry etching process to form a light-emitting unit of the third type of device corresponding to the third opening.

25. The preparation method according to claim 20, characterized in that: In the step of patterning the isolation material layer to form the third opening, an isolation structure is formed, part of the first unit, part of the second unit and part of the third unit extend to a side of the isolation structure away from the substrate and there is a gap between the isolation structure, and redundant material is arranged in the gap, and after the step of removing part of the third type of light-emitting material outside the third opening by using a dry etching process to form a light-emitting unit of the third type of device arranged corresponding to the third opening, the step further includes: A second encapsulation layer is prepared, wherein at least a portion of the material of the second encapsulation layer extends into the gap to form a filling structure.

26. A display device, characterized in that: A display panel comprising any one of claims 1 to 9, or a display panel prepared by the preparation method according to any one of claims 10 to 25.

Images