Perovskite solar cell, preparation method thereof, photovoltaic module and photovoltaic system
The passivation layer is prepared by evaporation method and linear source technology, which solves the problem of poor passivation layer uniformity in perovskite solar cells, and improves the photoelectric conversion efficiency and feasibility of large-area production.
Patent Information
- Application Number
- CN202411249594.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-06
- Publication Date
- 2024-12-27
AI Technical Summary
During the preparation process of existing perovskite solar cells, the solution method has problems of slow preparation speed and poor uniformity, resulting in low photoelectric conversion efficiency.
The passivation layer is prepared by the evaporation method, and a linear source is used as the evaporation source to control the evaporation rate, thickness and scanning rate to ensure the uniformity and efficiency of the passivation layer.
The photoelectric conversion efficiency of perovskite solar cells is improved, and the uniformity of the passivation layer and the feasibility of large-area production are achieved.
Smart Images
Figure CN119212517A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of photovoltaic technology, and in particular, to perovskite solar cells and preparation methods thereof, photovoltaic modules and photovoltaic systems. Background Art
[0002] Perovskite solar cells are one of the most promising thin-film photovoltaic technologies and have made unprecedented progress in the past decade. Non-radiative recombination losses and insufficient open-circuit voltage are considered to be the main limiting factors for further improving device efficiency. At present, many research results have shown that two-dimensional passivation materials can effectively passivate perovskite grain boundaries and defects between perovskite and electron transport layers. However, most passivation layer preparation methods are based on solution methods, that is, a solution of passivation layer material is coated on the surface of the perovskite layer, and the passivation layer is obtained by annealing. Although good results have been achieved, the solution method will face the problems of slow preparation speed and poor uniformity of the passivation layer, resulting in poor passivation effect in large-area preparation and high loss of photoelectric conversion efficiency of perovskite solar cells. Summary of the invention
[0003] In the first aspect of the present application, the present application proposes a method for preparing a perovskite solar cell, the perovskite solar cell comprising a perovskite layer and a passivation layer arranged on at least one side of the perovskite layer, the method comprising: providing a substrate, preparing a first transmission layer on one side of the substrate; preparing a perovskite layer on the side of the first transmission layer away from the substrate; using an evaporation method, preparing a passivation layer on the side of the perovskite layer away from the first transmission layer, the evaporation source of the evaporation method comprising a line source; preparing a second transmission layer on the side of the passivation layer away from the perovskite layer; preparing a buffer layer on the side of the second transmission layer away from the passivation layer; preparing an electrode on the side of the buffer layer away from the second transmission layer to obtain a perovskite solar cell; wherein one of the first transmission layer and the second transmission layer comprises a hole transmission layer, and the other comprises an electron transmission layer. Thus, the perovskite solar cell prepared by the method of the present application has the advantage of a higher photoelectric conversion efficiency.
[0004] In some embodiments, the evaporation rate of the evaporation method is In this way, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0005] In some embodiments, the evaporation thickness of the evaporation method is 1 nm-10 nm. Thus, the photoelectric conversion efficiency of the perovskite solar cell can be improved.
[0006] In some embodiments, the distance between the evaporation source and the perovskite layer is 50 mm to 300 mm. Thus, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0007] In some embodiments, the scanning rate of the evaporation method is 0.5 mm / s-3 mm / s. Thus, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0008] In some embodiments, the length of the line source is 400 mm to 800 mm. Thus, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0009] In some embodiments, the evaporation method includes: heating the raw material of the passivation layer to 60°C-100°C at a heating rate of 3°C / min-30°C / min, maintaining the temperature, and continuing to heat the raw material of the passivation layer to evaporate, so as to prepare a passivation layer on at least one side of the perovskite layer. In this way, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0010] In some embodiments, the constant temperature time is 10 min-100 min. Thus, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0011] In some embodiments, the step of preparing a perovskite layer on the side of the first transmission layer away from the substrate comprises: preparing an inorganic salt layer by evaporation; and evaporating an organic salt on at least one side of the inorganic salt layer to obtain a perovskite layer. Thus, a perovskite layer with good surface morphology and flatness can be prepared.
[0012] In some embodiments, the evaporation source of the inorganic salt layer includes a first evaporation source and a second evaporation source, the first evaporation source includes lead iodide, and the second evaporation source includes at least one of cesium bromide and cesium iodide. Thus, a perovskite layer with good surface morphology and flatness can be prepared.
[0013] In some embodiments, the evaporation rate of the first evaporation source is And / or, the evaporation rate of the second evaporation source is And / or, the thickness of the inorganic salt layer is 205nm-305nm. Thus, a perovskite layer with good surface morphology and flatness can be prepared.
[0014] In the second aspect of the present application, the present application proposes a perovskite solar cell, which is prepared by the method described in the first aspect. Therefore, the perovskite solar cell has the advantage of high photoelectric conversion efficiency.
[0015] In some embodiments, the material of the passivation layer includes at least one of phenylethylamine iodide, 4-trifluoromethyl-aniline iodide, 2-thiopheneethylamine iodide, ethylamine salt iodide and guanidine iodide. Thus, the photoelectric conversion efficiency of the perovskite solar cell can be further improved.
[0016] In a third aspect of the present application, the present application proposes a photovoltaic module, comprising at least one cell string, wherein the cell string comprises at least two of the aforementioned perovskite solar cells.
[0017] In a fourth aspect of the present application, the present application proposes a photovoltaic system, comprising the aforementioned photovoltaic component. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0019] Figure 1 A flowchart of a method for preparing a perovskite solar cell according to an embodiment of the present application;
[0020] Figure 2 A schematic diagram of line source evaporation according to an embodiment of the present application;
[0021] Figure 3 Schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present application.
[0022] Description of reference numerals:
[0023] Substrate 10 ; first transmission layer 20 ; perovskite layer 30 ; passivation layer 40 ; second transmission layer 50 ; buffer layer 60 ; electrode 70 . DETAILED DESCRIPTION
[0024] The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the drawings, but unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of actually identical structures may be omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.
[0025] Unless otherwise defined, all technical and scientific terms used in this application have the same meanings as those commonly understood by technicians in the technical field to which this application belongs; the terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit this application; unless otherwise specified, the numerical values of the parameters mentioned in this application can be measured using various measurement methods commonly used in the art (for example, they can be tested according to the methods given in the embodiments of this application).
[0026] The terms "including" and "having" in the specification and claims of the present application and any modifications thereof are open expressions, that is, including the contents specified in the present application but not excluding other contents.
[0027] In the description of the present application, it should be understood that the terms "width", "thickness", etc. indicate orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0028] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. "First feature" and "second feature" may include one or more of the features.
[0029] In the description of the present application, “plurality” means two or more.
[0030] In the description of the present application, "A and / or B" may include the case of A alone, the case of B alone, or any of the cases of A and B, where A and B are only used for examples and may be any technical feature connected by "and / or" in the present application.
[0031] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.
[0032] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.
[0033] Perovskite solar cells are one of the most promising thin-film photovoltaic technologies and have made unprecedented progress in the past decade. However, there are a large number of harmful defects in perovskite solar cells, such as interstitial, vacant and impurity defects inside the perovskite structure, and a large number of grain boundary and interface defects caused by dangling bonds on grain boundaries and crystal planes during perovskite film formation.
[0034] Two-dimensional passivation materials can effectively passivate the perovskite grain boundaries and the defects between the perovskite and the charge transfer layer. However, most methods for preparing the passivation layer are based on the solution method, that is, the solution of the passivation layer material is coated on the surface of the perovskite layer, and the passivation layer is obtained by annealing. Although good results have been achieved, the solution method will face the problems of slow preparation speed and poor uniformity of the passivation layer, resulting in poor passivation effect in large-area preparation and high loss of photoelectric conversion efficiency of perovskite solar cells.
[0035] Related technologies improve the performance of devices by vacuum thermal evaporation of the passivation layer. However, existing evaporation methods often use point source evaporation or other evaporation methods, and the passivation film obtained has poor uniformity and poor passivation effect. When prepared over a large area, the passivation film has poor uniformity and the passivation effect is particularly poor, resulting in low efficiency of perovskite solar cells containing it.
[0036] In the present application, an evaporation method is used to prepare a passivation layer, and the evaporation source of the evaporation method is a line source. Line source evaporation can make the material evaporate evenly from a continuous and long line, and the obtained film is relatively more uniform. Therefore, evaporation can more easily achieve orderly evaporation of organic passivation materials, thereby greatly improving the repeatability of evaporation of passivation materials; and the evaporation source using a line source to prepare the passivation layer has a higher tolerance for materials. This method is highly efficient and more generally applicable. The passivation layer finally obtained is more uniform, can be produced on a large area, and has a better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0037] In a first aspect of the present application, the present application proposes a method for preparing a perovskite solar cell, wherein the perovskite solar cell comprises a perovskite layer and a passivation layer disposed on at least one side of the perovskite layer, Figure 1 , the method comprising:
[0038] S1: providing a substrate, and preparing a first transmission layer on one side of the substrate;
[0039] S2: preparing a perovskite layer on a side of the first transport layer facing away from the substrate;
[0040] In some embodiments, the step of preparing a perovskite layer on a side of the first transport layer facing away from the substrate comprises:
[0041] S001: Preparation of inorganic salt layer by evaporation method;
[0042] S002: Evaporating an organic salt on at least one side of the inorganic salt layer to obtain a perovskite layer.
[0043] By adopting the above two-step method to prepare the perovskite layer, a perovskite layer with good surface morphology and flatness can be prepared, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0044] In some embodiments, the evaporation source of the inorganic salt layer includes a first evaporation source and a second evaporation source, the first evaporation source includes lead iodide, and the second evaporation source includes at least one of cesium bromide and cesium iodide. Thus, a perovskite layer with good surface morphology and flatness can be prepared, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0045] In some embodiments, the evaporation rate of the first evaporation source is For example, the evaporation rate of the first evaporation source may be Etc., controlling the evaporation rate of the first evaporation source within the above range is more conducive to preparing a perovskite layer with good surface morphology and flatness, and improving the photoelectric conversion efficiency of the perovskite solar cell.
[0046] In some embodiments, the evaporation rate of the second evaporation source is For example, the evaporation rate of the second evaporation source can be Specifically, controlling the evaporation rate of the second evaporation source within the above range is further beneficial to preparing a perovskite layer with good surface morphology and flatness, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0047] In some embodiments, the thickness of the inorganic salt layer is 205nm-305nm. For example, the thickness of the inorganic salt layer can be 205nm, 220nm, 250nm, 270nm, 290nm, 300nm, 305nm, etc. Controlling the thickness of the inorganic salt layer within the above range is conducive to the organic salt fully entering the inorganic salt layer and mixing and reacting with the inorganic salt, which is conducive to obtaining a uniform perovskite layer and improving the photoelectric conversion efficiency of the perovskite solar cell.
[0048] In some embodiments, the organic salt comprises at least one of formamidine iodide (FAI), formamidine bromide (FABr), formamidine chloride (FACl), methylamine iodide (MAI), methylamine bromide (MABr), and methylamine chloride (MACl).
[0049] S3: preparing a passivation layer on a side of the perovskite layer away from the first transmission layer by an evaporation method, wherein an evaporation source of the evaporation method comprises a line source.
[0050] The passivation layer is prepared by an evaporation method, and the evaporation source of the evaporation method is a linear source. Linear source evaporation can more easily achieve orderly evaporation of organic passivation materials, thereby greatly improving the repeatability of evaporation of passivation materials; and the evaporation source using a linear source to prepare the passivation layer has a higher tolerance for materials. This method is highly efficient and more universally applicable. The passivation layer finally obtained is more uniform, can be produced on a large area, and has a better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0051] In some embodiments, the evaporation rate of the evaporation method is For example, it could be Etc., by controlling the evaporation rate of the evaporation method within the above range, the uniformity of the passivation layer can be further improved, and the photoelectric conversion efficiency of the perovskite solar cell can be improved.
[0052] In some embodiments, the evaporation thickness of the evaporation method is 1nm-10nm. For example, the evaporation thickness can be 1nm, 2nm, 3nm, 5nm, 8nm, 10nm, etc. It can be understood that the evaporation thickness refers to the thickness of the passivation layer. The thickness of the passivation layer is controlled within the above range, which can fully passivate the defects of the perovskite layer without affecting the efficiency of the perovskite solar cell.
[0053] In some embodiments, the distance between the evaporation source and the perovskite layer is 50 mm-300 mm. For example, the distance between the evaporation source and the perovskite layer can be 50 mm, 100 mm, 150 mm, 200 mm, 300 mm, etc. It can be understood that the distance between the evaporation source and the perovskite layer refers to the vertical distance between the two. Therefore, by controlling the distance between the evaporation source and the perovskite layer within the above range, a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0054] In some embodiments, the scanning rate of the evaporation method is 0.5 mm / s-3 mm / s. For example, the scanning rate of the evaporation method can be 0.5 mm / s, 1 mm / s, 1.5 mm / s, 2 mm / s, 2.5 mm / s, 3 mm / s, etc. Specifically, by controlling the scanning rate of the evaporation method within the above range, a uniform passivation layer can be obtained, and large-area production can be achieved with better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0055] It can be understood that in the embodiment of the present application, the principle diagram of the evaporation method (line source evaporation) is as follows Figure 2 As shown, the material of the passivation layer evaporates from the linear evaporation source in the form of steam, and the perovskite layer moves in a horizontal direction perpendicular to the linear evaporation source. The scanning rate of the evaporation method refers to the movement speed of the perovskite layer ( Figure 2 (v).
[0056] In some embodiments, the length of the line source is 400 mm-800 mm. For example, the length of the line source can be 400 mm, 500 mm, 600 mm, 700 mm, 800 mm, etc. It can be understood that the length of the line source refers to the length of the line of the linear evaporation source, such as Figure 2 As shown in L in the figure, by controlling the length of the line source within the above range, it is easier to achieve orderly evaporation of the organic passivation material, the preparation efficiency is high, a uniform passivation layer can be obtained, large-scale production can be achieved, and the passivation effect is better, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0057] In some embodiments, the evaporation method comprises:
[0058] S101: heating the raw material of the passivation layer to 60°C-100°C at a heating rate of 3°C / min-30°C / min, maintaining the temperature, and continuing to heat the raw material of the passivation layer to evaporate, so as to prepare a passivation layer on one side of the perovskite layer.
[0059] For example, the heating rate of the raw material of the passivation layer can be 3°C / min, 5°C / min, 10°C / min, 15°C / min, 20°C / min, 25°C / min, 30°C / min, etc.; the heated temperature can be 60°C, 70°C, 80°C, 90°C, 100°C, etc. Therefore, by controlling the heating rate and the heated temperature within the above range, it can be ensured that the raw material of the passivation layer is fully heated, and the temperature of each part is uniform, so that the material is heated evenly, so that the raw material of the passivation layer is evenly evaporated and deposited on the perovskite layer, so that a uniform passivation layer can be obtained, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0060] In some embodiments, the constant temperature time is 10 min-100 min. For example, the constant temperature time can be 10 min, 30 min, 50 min, 70 min, 90 min, 100 min, etc. Specifically, the constant temperature time is controlled within the above range to ensure that the raw materials of the passivation layer are heated uniformly, and it is easier to achieve orderly evaporation of the organic passivation material, with high preparation efficiency, and a uniform passivation layer can be obtained, which can be produced on a large area with better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.
[0061] In summary, in the present application, the passivation layer is prepared by evaporation method and the evaporation source of the evaporation method is a line source. Line source evaporation can more easily realize the orderly evaporation of organic passivation materials, thereby greatly improving the repeatability of evaporation of passivation materials; and the evaporation source using a line source to prepare the passivation layer has higher tolerance for materials. This method is highly efficient and more generally applicable. The passivation layer finally obtained is more uniform, can be produced on a large area, and has a better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0062] S4: preparing a second transmission layer on a side of the passivation layer away from the perovskite layer;
[0063] S5: preparing a buffer layer on a side of the second transmission layer away from the passivation layer;
[0064] S6: preparing an electrode on a side of the buffer layer away from the second transport layer to obtain a perovskite solar cell;
[0065] Wherein, one of the first transport layer and the second transport layer comprises a hole transport layer, and the other comprises an electron transport layer.
[0066] Therefore, the perovskite solar cell is prepared by the above method, and the prepared passivation layer is more efficient and it is easier to achieve orderly evaporation of organic passivation materials, thereby greatly improving the repeatability of evaporation of the passivation material; and the evaporation source uses a linear source to prepare the passivation layer, which has a higher tolerance for materials. This method is efficient and more universally applicable. The passivation layer finally prepared is more uniform, can be produced on a large area, and has a better passivation effect, thereby improving the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0067] In the second aspect of the present application, the present application proposes a perovskite solar cell, which is prepared by the method described in the first aspect. Thus, the prepared perovskite solar cell has the advantage of high photoelectric conversion efficiency.
[0068] In some embodiments of this application, please refer to Figure 3 , the perovskite solar cell can be used for positive and inverted structure devices: the perovskite solar cell may include a substrate 10, a first transmission layer 20, a perovskite layer 30, a passivation layer 40, a second transmission layer 50, a buffer layer 60, and an electrode 70 stacked in sequence. One of the first transmission layer 20 and the second transmission layer 50 includes a hole transport layer, and the other includes an electron transport layer.
[0069] In some embodiments, the material of the passivation layer 40 includes at least one of phenylethylamine iodide (PEAI), 4-trifluoromethyl-phenylamine iodide (CF3-PAI), 2-thiopheneethylamine iodide (TEAI), ethylamine salt iodide (EAI), and guanidine iodide (GUAl). Therefore, the passivation layer uses the above materials to fully passivate the defects of the perovskite layer, and can further improve the photoelectric conversion efficiency of the perovskite solar cell.
[0070] The substrate 10 may include at least one of FTO conductive glass, ITO conductive glass, FTO conductive plastic, and ITO conductive plastic. The thickness of the substrate 10 may be 1-2 mm.
[0071] The hole transport layer may include nickel oxide (NiO x), the self-assembly material includes at least one of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid (4PADCB), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline (TAPC). The hole transport layer can be deposited by any one of spin coating, slit coating, magnetron sputtering or evaporation, with a thickness of 1nm-10nm. For example, the thickness of the hole transport layer can be 1nm, 3nm, 5nm, 7nm, 9nm, 10nm, etc.
[0072] The electron transport layer may include SnO2, TiO2, ZnO, Al2O3, fullerene and its derivatives (C 60 , C 70 , PCBM), etc., and the thickness is 10nm-50nm. For example, the thickness can be 10nm-49nm, 15nm-45nm, 20nm-40nm, 25nm-35nm, etc.
[0073] The buffer layer 60 may include at least one of bath cuproine (BCP) or atomic layer deposited tin dioxide (SnO 2 ) with a thickness of 5-15 nm.
[0074] The electrode 70 includes at least one of Ag, Al, Au, IWO (W-doped In2O3), ITO (Sn-doped In2O3), IZO (indium zinc oxide) and AZO (aluminum-doped zinc oxide), and has a thickness of 100nm-200nm. For example, the thickness can be 100nm-190nm, 110nm-180nm, 120nm-170nm, 130nm-160nm, 140nm-150nm, etc.
[0075] In some embodiments of the present application, the perovskite layer 30 includes ABX3, wherein A includes at least one of an organic amine (such as methylamine, formamidine, etc.) and Cs, B includes at least one of Pb and Sn, and X includes at least one of Cl, Br, and I.
[0076] In a third aspect of the present application, the present application proposes a photovoltaic module, comprising at least one cell string, wherein the cell string comprises at least two of the aforementioned perovskite solar cells.
[0077] In some embodiments, the perovskite solar cells may be connected together by serial welding, so that the electrical energy generated by the individual perovskite solar cells can be collected for subsequent transmission.
[0078] In some embodiments, the perovskite solar cells may be arranged in an intermittent manner or stacked together in a shingled form.
[0079] For example, the photovoltaic module further includes an encapsulation layer and a cover plate, wherein the encapsulation layer is used to cover the surface of the battery string, and the cover plate is used to cover the surface of the encapsulation layer away from the battery string.
[0080] In a fourth aspect of the present application, the present application proposes a photovoltaic system, comprising the aforementioned photovoltaic component.
[0081] Photovoltaic systems can be used in photovoltaic power stations, such as ground power stations, rooftop power stations, water power stations, etc., and can also be used in equipment or devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars, solar buildings, etc. Of course, it is understandable that the application scenarios of photovoltaic systems are not limited to this, that is to say, photovoltaic systems can be used in all fields that require solar energy to generate electricity. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components can form multiple photovoltaic arrays. The photovoltaic array is connected to the junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.
[0082] The scheme of the present application is described below by specific examples. It should be noted that the following examples are only used to illustrate the present application and should not be considered as limiting the scope of the present application. If no specific technology or conditions are specified in the examples, the technology or conditions described in the literature in this area or the product instructions are used. The reagents or instruments used are not specified by the manufacturer, and are all conventional products that can be obtained commercially.
[0083] Example 1
[0084] (1) Deposition of NiO on a transparent conductive substrate using magnetron sputtering x , thickness 25nm;
[0085] (2) Spin coating on NiO x The self-assembled material MeO-2PACz was deposited on the surface. MeO-2PACz was dissolved in ethanol with a concentration of 0.25 mg / mL. The spin coating speed was 4000 rpm / s. The coating was annealed at 100°C for 10 min. The thickness was 8 nm to obtain a hole transport layer.
[0086] (3) PbI2 and CsBr skeleton layer (inorganic layer) were co-evaporated on the surface of the hole transport layer by evaporation method. The evaporation rate of PbI2 was The evaporation rate of CsBr is The thickness of the skeleton layer is 255 nm;
[0087] (4) The organic layer is deposited on the surface of the skeleton layer by evaporation method, and the evaporation rate of FAI is The evaporation thickness is 220nm, and annealing is performed in N2 atmosphere at 90°C for 5min to obtain the prefabricated perovskite layer;
[0088] (6) annealing the prefabricated perovskite layer again, with the annealing environment humidity being 30%-40%, the annealing temperature being 150° C., and the annealing time being 20 min, to obtain a perovskite absorption layer with a band gap of approximately 1.68 eV and a thickness of 580 nm;
[0089] (7) PEAI was evaporated on the surface of the perovskite absorption layer by evaporation as a passivation layer. The PEAI powder was placed in a linear evaporation source and heated to 80°C at a heating rate of 5°C / min. The temperature was kept constant for 30 min and the temperature was continued to rise until the rate reached The baffle was turned on for evaporation, the distance between the evaporation source and the perovskite layer was 200 mm, the line source length was 600 mm, the scanning rate was 2 mm / s, the evaporation thickness was 2 nm, and then annealing was performed at 80 ° C for 5 min to obtain the perovskite active absorption layer;
[0090] (8) Using evaporation method to evaporate the electron transport layer C with a thickness of 20nm on the surface of the passivation layer 60 and a buffer layer BCP with a thickness of 5 nm;
[0091] (9) The Ag metal electrode layer was prepared by thermal evaporation method with a thickness of 100 nm to complete the preparation of the perovskite solar cell.
[0092] Examples 2-13 are the same as Example 1, except that the specific parameters in step (4) are different. Referring to Table 1, in step (7) of Example 12, the evaporation material CF3-PAI is heated to 60°C at a heating rate of 5°C / min, and in step (7) of Example 13, the evaporation material GUAI is heated to 100°C at a heating rate of 5°C / min.
[0093] Comparative Example 1
[0094] Comparative Example 1 is consistent with Example 1, except that step (7) is replaced by:
[0095] The evaporation source adopts point source evaporation. The PEAI powder is placed in a point crucible and heated to 80°C at a heating rate of 5°C / min. The temperature is kept constant for 30 minutes and the heating is continued until the rate reaches The baffle evaporation was turned on, the distance between the evaporation source and the perovskite layer was 200 mm, the evaporation thickness was 2 nm, and then annealing was performed at 80°C for 5 minutes to obtain the perovskite active absorption layer.
[0096] Comparative Example 2
[0097] Comparative Example 1 is consistent with Example 1, except that step (7) is replaced by:
[0098] The evaporation source adopts surface source evaporation. The PEAI powder is evenly spread on the surface evaporation source, and the temperature is raised to 80℃ at a heating rate of 5℃ / min. The temperature is kept constant for 30min, and the temperature is continued to rise until the rate reaches The baffle evaporation was turned on, the distance between the evaporation source and the perovskite layer was 200 mm, the evaporation thickness was 2 nm, and then annealing was performed at 80°C for 5 minutes to obtain the perovskite active absorption layer.
[0099] Table 1
[0100]
[0101]
[0102] The active area of the perovskite layer of the embodiment and the comparative example is limited to a small area (0.049 cm 2 ) or large area (1cm 2 ), as shown in Table 2.
[0103] Table 2
[0104]
[0105]
[0106] In accordance with the IEC 61730 standard, the open circuit voltage Voc, short circuit current density Jsc, fill factor FF (Fill Factor), and energy conversion efficiency Eff (Efficiency) of the above perovskite solar cell were tested. The test results are shown in Table 3.
[0107] Table 3
[0108] <![CDATA[V OC (V)]]> <![CDATA[J SC (mA / cm 2 )]]> Fill Factor(%) Efficiency(%) Example 1 1.186 20.995 83.368 20.759 Example 2 1.184 20.987 81.310 20.204 Example 3 1.178 20.993 83.012 20.529 Example 2 1.185 20.975 80.983 20.129 Example 3 1.182 20.981 79.993 19.838 Example 4 1.179 20.812 80.812 19.829 Example 5 1.180 20.917 81.093 20.015 Example 6 1.181 20.914 82.912 20.479 Example 7 1.176 20.892 81.234 19.958 Example 8 1.174 20.916 80.082 19.664 Example 9 1.175 20.892 81.935 20.113 Example 10 1.183 20.901 80.099 19.805 Embodiment 11 1.177 20.908 81.267 19.999 Example 12 1.184 20.987 81.310 20.204 Example 13 1.178 20.993 83.012 20.529 Comparative Example 1 1.161 20.697 80.476 19.338 Comparative Example 2 1.143 20.012 75.243 17.211
[0109] As can be seen from Table 3, compared with Comparative Examples 1 and 2, when preparing the passivation layer by evaporation, the evaporation source of Examples 1-13 uses a line source, and the photoelectric conversion efficiency of the perovskite solar cell containing it is higher. The evaporation source of Comparative Example 1 uses a point source, and the evaporation source of Comparative Example 2 uses a surface source, and the photoelectric conversion efficiency of the perovskite solar cell is significantly reduced. It can be seen that the evaporation method of Examples 1-13 of the present application realizes the orderly evaporation of the organic passivation material, and the passivation layer finally obtained is more uniform, which improves the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0110] It can be seen from Tables 2 and 3 that the use of linear source evaporation to prepare the passivation layer is effective in improving the performance of large-area devices (1 cm 2 ) performance, compared with the point source small area (0.049cmm 2 ), the device performance loss is less after amplification; while the surface source evaporation has poor device performance due to the imperfect process. In addition, the energy conversion efficiency of Comparative Example 1 is still low compared with the large-area preparation of Examples 1-13. It can be seen that the present application adopts line source evaporation, and the passivation layer finally obtained is more uniform, which improves the photoelectric conversion efficiency of the perovskite solar cell containing it.
[0111] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are only examples, and the embodiments having the same structure as the technical idea and exerting the same effect within the scope of the technical solution of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the main purpose of the present application, various modifications that can be thought of by those skilled in the art to the embodiments and other methods of combining some of the constituent elements in the embodiments are also included in the scope of the present application.
Claims
1. A method for preparing a perovskite solar cell, characterized in that: The method comprises: Providing a substrate, and preparing a first transmission layer on one side of the substrate; preparing a perovskite layer on a side of the first transport layer facing away from the substrate; A passivation layer is prepared on a side of the perovskite layer away from the first transmission layer by an evaporation method, wherein an evaporation source of the evaporation method comprises a line source; Prepare a second transport layer on a side of the passivation layer away from the perovskite layer; preparing a buffer layer on a side of the second transmission layer away from the passivation layer; Prepare an electrode on the side of the buffer layer away from the second transport layer to obtain a perovskite solar cell; Wherein, one of the first transport layer and the second transport layer comprises a hole transport layer, and the other comprises an electron transport layer.
2. The method according to claim 1, characterized in that The evaporation method comprises at least one of the following features: (1) The evaporation rate is (2) The distance between the evaporation source and the perovskite layer is 50 mm to 300 mm; (3) The scanning rate of the evaporation method is 0.5 mm / s-3 mm / s; (4) The length of the line source is 400 mm-800 mm; (5) The thickness of the passivation layer obtained by the evaporation method is 1nm-10nm.
3. The method according to claim 1 or 2, characterized in that The evaporation method comprises: The raw material of the passivation layer is heated to 60°C-100°C at a heating rate of 3°C / min-30°C / min, the temperature is kept constant, and the temperature is continued to be increased to evaporate the raw material of the passivation layer, so as to prepare a passivation layer on at least one side of the perovskite layer.
4. The method according to claim 3, characterized in that The constant temperature time is 10min-100min.
5. The method according to claim 1 or 2, characterized in that: The step of preparing a perovskite layer on a side of the first transport layer facing away from the substrate comprises: The inorganic salt layer is prepared by evaporation method; The organic salt is evaporated on at least one side of the inorganic salt layer to obtain a perovskite layer.
6. The method according to claim 5, characterized in that The evaporation source of the inorganic salt layer includes a first evaporation source and a second evaporation source, the first evaporation source includes lead iodide, and the second evaporation source includes at least one of cesium bromide and cesium iodide.
7. The method according to claim 6, characterized in that The evaporation rate of the first evaporation source is and / or, The evaporation rate of the second evaporation source is and / or, The thickness of the inorganic salt layer is 205nm-305nm.
8. A perovskite solar cell, characterized in that: The perovskite solar cell is prepared by the method described in any one of claims 1 to 7.
9. The perovskite solar cell according to claim 8, characterized in that: The material of the passivation layer includes at least one of phenylethylamine iodide, 4-trifluoromethyl-aniline iodide, 2-thiopheneethylamine iodide, ethylamine salt iodide and guanidine iodide.
10. A photovoltaic module, characterized in that: The method comprises at least one cell string, wherein the cell string comprises at least two perovskite solar cells according to claim 8 or 9.
11. A photovoltaic system, characterized in that: The photovoltaic module according to claim 10 is included.