Display substrate, display panel and display device
Patent Information
- Application Number
- CN202380008795.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-25
- Publication Date
- 2024-12-27
AI Technical Summary
In large-size OLED or QLED display devices, the cathode thickness of the top-emitting structure is less than 20nm, resulting in higher resistance, resulting in significant differences in brightness at different locations of the display product, affecting the visual experience.
A display substrate is designed, including a substrate substrate, a light-emitting functional layer, a first electrode layer, a metal suppression layer and an auxiliary electrode layer. The metal suppression structure is electrically connected to the auxiliary electrode. The auxiliary electrode surrounds the metal suppression structure and is formed through an evaporation process. The auxiliary electrode avoids the metal suppression structure area and reduces the resistance of the first electrode.
The brightness uniformity of the display substrate is improved, the resistance is reduced, and the visual experience is improved.
Smart Images

Figure CN119213894A_ABST
Abstract
Description
Display substrate, display panel, and display device Technical Field
[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate, a display panel, and a display device. Background Art
[0002] At present, electroluminescent display devices are becoming increasingly important in the display industry, especially OLED display devices, which have been widely promoted and applied in recent years due to their advantages such as high color gamut, bendability and fast response time.
[0003] Furthermore, in recent years, QLED displays have garnered significant attention from companies and researchers due to their low manufacturing costs and wide color gamut. Whether using OLED or QLED displays in large or medium-sized products, top-emitting structures require high transmittance for the cathode located on the light-emitting side. For example, the cathode thickness must be less than 20nm. Thinner cathodes have higher electrical resistance, leading to significant brightness differences at different locations on the display, impacting the visual experience.
[0004] Summary of the Invention
[0005] In view of the above problems, the present disclosure provides a display substrate, a display panel, and a display device.
[0006] According to a first aspect of the present disclosure, there is provided a display substrate, comprising:
[0007] substrate;
[0008] A light-emitting functional layer is provided on the base substrate;
[0009] a first electrode layer disposed on a side of the light-emitting functional layer away from the substrate;
[0010] a metal inhibition layer provided on a side of the first electrode layer facing away from the base substrate;
[0011] an auxiliary electrode layer disposed on a side of the first electrode layer facing away from the base substrate; and
[0012] A light emitting device provided on the substrate;
[0013] Wherein, the light emitting device includes a light emitting portion and a first electrode located in the first electrode layer;
[0014] The metal inhibition layer includes a metal inhibition structure, and the orthographic projection of the light emitting portion on the base substrate is located within the orthographic projection of the metal inhibition structure on the base substrate;
[0015] The auxiliary electrode layer includes an auxiliary electrode electrically connected to the first electrode and spaced apart from the metal suppression structure.
[0016] According to an embodiment of the present disclosure, the light-emitting function layer includes a pixel defining layer, the pixel defining layer includes a pixel opening and a first defining portion surrounding the pixel opening, and the light-emitting portion of the light-emitting device is located in the pixel opening;
[0017] The auxiliary electrode at least partially surrounds the metal inhibition structure, and an orthographic projection of the auxiliary electrode on the base substrate is located within an orthographic projection of the first defining portion on the base substrate.
[0018] According to an embodiment of the present disclosure, the metal suppression structure includes a first middle portion and a first edge portion surrounding the first middle portion, and the first edge portion overlaps with the first limiting portion in the thickness direction of the display substrate;
[0019] The auxiliary electrode has a thickness greater than or equal to a thickness of the metal suppression structure, and in a thickness direction of the display substrate, the auxiliary electrode at least partially overlaps with the first edge portion.
[0020] According to an embodiment of the present disclosure, the ratio of the thickness of the auxiliary electrode to the thickness of the metal suppression structure is set to 1:1 to 100:1.
[0021] According to an embodiment of the present disclosure, the metal suppression structure includes a first middle portion and a first edge portion surrounding the first middle portion, and the first edge portion overlaps with the first limiting portion in the thickness direction of the display substrate;
[0022] The auxiliary electrode has a thickness smaller than that of the metal suppression structure, and the auxiliary electrode is spaced apart from the first edge portion in a thickness direction of the display substrate.
[0023] According to an embodiment of the present disclosure, a ratio of the thickness of the auxiliary electrode to the thickness of the metal inhibition structure is set to 1:20 to 2:5.
[0024] According to an embodiment of the present disclosure, the first edge portion includes a first inclined portion, a surface of the first inclined portion away from the substrate has a first angle with the first electrode, a surface of the auxiliary electrode adjacent to the first inclined portion has a second angle with the first electrode, and the first angle is substantially the same as the second angle.
[0025] According to an embodiment of the present disclosure, the cross-sectional shape of the metal inhibition structure along a direction perpendicular to the substrate includes a regular trapezoid or an inverted trapezoid.
[0026] According to an embodiment of the present disclosure, the thickness of the auxiliary electrode is negatively correlated with the thickness of the metal suppression structure, and there is a first distance between the orthographic projection of the auxiliary electrode on the base substrate and the orthographic projection of the light-emitting portion on the base substrate, and the first distance is positively correlated with the thickness of the metal suppression structure.
[0027] According to an embodiment of the present disclosure, the display substrate includes a plurality of the light-emitting devices, the metal inhibition layer includes a plurality of the metal inhibition structures, at least one metal inhibition structure is arranged corresponding to at least one light-emitting device, and different metal inhibition structures are arranged corresponding to different light-emitting devices;
[0028] The orthographic projection of at least one of the metal inhibition structures on the base substrate covers the orthographic projection of the light-emitting portion of the light-emitting device corresponding thereto on the base substrate;
[0029] The different metal suppression structures are spaced apart from each other.
[0030] According to an embodiment of the present disclosure, the plurality of light-emitting devices include a plurality of groups, at least one group includes a plurality of light-emitting devices, and at least one metal inhibition structure is disposed corresponding to at least one group of light-emitting devices;
[0031] The orthographic projection of at least one metal inhibition structure on the base substrate continuously covers the orthographic projection of each light emitting portion of a group of light emitting devices corresponding thereto on the base substrate.
[0032] According to an embodiment of the present disclosure, a plurality of light-emitting devices in at least one group of light-emitting devices are arranged along a first direction, and two adjacent light-emitting devices arranged along the first direction emit light of different colors.
[0033] According to an embodiment of the present disclosure, a plurality of light-emitting devices in at least one group of light-emitting devices are arranged in an array along a first direction and a second direction, and the light-emitting colors of two adjacent light-emitting devices arranged along the first direction are different, and the light-emitting colors of two adjacent light-emitting devices arranged along the second direction are different.
[0034] According to an embodiment of the present disclosure, there is a second interval between the light emitting portions of two adjacent light emitting devices in the same group of light emitting devices, and there is a third interval between the light emitting portions of two adjacent light emitting devices in adjacent groups of light emitting devices, and the second interval is smaller than the third interval.
[0035] According to an embodiment of the present disclosure, the dimension of the surface of at least one auxiliary electrode close to the base substrate in its width direction is less than or equal to the second spacing, and the first direction includes the direction in which the auxiliary electrode points to the light-emitting portion adjacent to it.
[0036] According to an embodiment of the present disclosure, an edge of at least one of the metal inhibition structures overlaps with the first defining portion adjacent thereto in the thickness direction of the display substrate, and the overlapping portion has a first overlapping size;
[0037] The first overlapping dimension is smaller than or equal to the dimension of the surface of the auxiliary electrode close to the base substrate in the width direction.
[0038] According to an embodiment of the present disclosure, the display substrate includes a plurality of the auxiliary electrodes, at least one auxiliary electrode surrounds at least one metal suppression structure, and two adjacent auxiliary electrodes share a same side.
[0039] According to an embodiment of the present disclosure, the metal inhibition structure includes a metal-repellent material, and the light transmittance of the metal-repellent material is greater than or equal to the light transmittance of the first electrode.
[0040] According to a second aspect of the present disclosure, a display panel is provided, comprising the above-mentioned display substrate.
[0041] According to a third aspect of the present disclosure, a display device is provided, comprising the above-mentioned display panel. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:
[0043] FIG1 schematically shows a plan view of a display substrate according to an embodiment of the present disclosure;
[0044] FIG2 schematically shows one of the cross-sectional views of a display substrate according to an embodiment of the present disclosure;
[0045] FIG3 schematically shows one of the cross-sectional views of a metal suppression structure according to an embodiment of the present disclosure;
[0046] FIG4 schematically shows one of the cross-sectional views of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure;
[0047] FIG5 schematically shows one of the plan views of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure;
[0048] FIG6 schematically shows a second cross-sectional view of a metal suppression structure according to an embodiment of the present disclosure;
[0049] FIG7 schematically shows a second cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure;
[0050] FIG8 schematically shows a third cross-sectional view of a metal suppression structure according to an embodiment of the present disclosure;
[0051] FIG9 schematically shows a third cross-sectional view of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure;
[0052] FIG10 schematically shows a second plan view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure;
[0053] FIG11 schematically shows one of the schematic diagrams for improving the ability of the auxiliary electrode to block light emitted at a large angle according to an embodiment of the present disclosure;
[0054] FIG12 schematically shows a fourth cross-sectional view of a metal suppression structure according to an embodiment of the present disclosure;
[0055] FIG13 schematically shows a fourth cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure;
[0056] FIG14 schematically shows a third plan view of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure;
[0057] FIG15 schematically shows a second schematic diagram of improving the auxiliary electrode's ability to block light emitted at a large angle according to an embodiment of the present disclosure;
[0058] FIG16 schematically shows a fifth cross-sectional view of a metal suppression structure according to an embodiment of the present disclosure;
[0059] FIG17 schematically shows a fifth cross-sectional view of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure;
[0060] FIG18 schematically shows a fourth plan view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure;
[0061] FIG19 schematically shows a plan view of a display panel according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0062] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.
[0063] It should be noted that in the drawings, the sizes and relative sizes of elements may be exaggerated for clarity and / or descriptive purposes. Thus, the sizes and relative sizes of the individual elements are not necessarily limited to those shown in the drawings. In the specification and drawings, the same or similar reference numerals indicate the same or similar parts.
[0064] When an element is described as being "on" another element, "connected to" another element, or "bound to" another element, the element may be directly on the other element, directly connected to the other element, or directly bound to the other element, or there may be an intermediate element. However, when an element is described as being "directly on" another element, "directly connected to" another element, or "directly bound to" another element, there is no intermediate element. Other terms and / or expressions used to describe the relationship between elements should be interpreted in a similar manner, for example, "between" versus "directly between", "adjacent" versus "directly adjacent", or "on" versus "directly on", etc. In addition, the term "connected" may refer to a physical connection, an electrical connection, a communication connection, and / or a fluid connection. In addition, the X-axis, Y-axis, and Z-axis are not limited to the three axes of a rectangular coordinate system, and may be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.
[0065] It should be noted that although the terms "first," "second," etc. may be used herein to describe various parts, components, elements, regions, layers, and / or portions, these parts, components, elements, regions, layers, and / or portions should not be limited by these terms. Rather, these terms are used to distinguish one part, component, element, region, layer, and / or portion from another. Thus, for example, the first part, first member, first element, first region, first layer, and / or first portion discussed below may be referred to as a second part, second member, second element, second region, second layer, and / or second portion without departing from the teachings of the present disclosure.
[0066] For ease of description, spatially relative terms, such as "upper," "lower," "left," "right," etc., may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figures. It should be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features.
[0067] As used herein, the terms "substantially," "about," "approximately," "roughly," and other similar terms are used as terms of approximation rather than as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by one of ordinary skill in the art. To account for factors such as process fluctuations, measurement problems, and errors associated with the measurement of a particular quantity (i.e., limitations of the measurement system), "about" or "approximately" as used herein are inclusive of the stated value and mean within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.
[0068] It should be noted that, in this article, the term "the same layer" refers to a layer structure formed by using the same film-forming process to form a film layer used to form a specific pattern, and then patterning the film layer using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous. In other words, multiple elements, components, structures, and / or parts located in the "same layer" are composed of the same material and are formed through the same patterning process. Typically, multiple elements, components, structures, and / or parts located in the "same layer" have approximately the same thickness.
[0069] Those skilled in the art should understand that, in this article, unless otherwise specified, the expression "height" or "thickness" refers to the dimension of the surface of each film layer arranged perpendicular to the display substrate, that is, the dimension along the light emitting direction of the display substrate, or the dimension along the normal direction of the display device.
[0070] In one example, a display substrate is provided. The display substrate in this example includes a base substrate and a plurality of light-emitting devices disposed on the base substrate. The light-emitting devices may include a first electrode, a second electrode, and a light-emitting portion located between the first and second electrodes. One of the first and second electrodes is an anode, and the other is a cathode. For example, the light-emitting device may be a top-emitting light-emitting device, in which the first electrode, the light-emitting portion, and the second electrode are disposed in sequence away from the base substrate, wherein the first electrode is the anode and the second electrode is the cathode. In this example, the cathode of the top-emitting light-emitting device is made of a metal or alloy with a low work function. To achieve high light transmittance, the cathode is thinned, specifically to less than 20 nm. Due to the thin cathode thickness, the cathode has a high resistance and generates a significant voltage drop. This can result in a noticeable difference in brightness on larger display substrates, such as those exceeding 10 inches.
[0071] In view of this, embodiments of the present disclosure provide a display substrate, comprising: a base substrate, a light-emitting functional layer disposed on the base substrate, a first electrode layer disposed on a side of the light-emitting functional layer facing away from the base substrate, a metal suppression layer disposed on a side of the first electrode layer facing away from the base substrate, an auxiliary electrode layer disposed on a side of the first electrode layer facing away from the base substrate, and a light-emitting device disposed on the base substrate. The light-emitting device includes a light-emitting portion and a first electrode disposed in the first electrode layer. The metal suppression layer includes a metal suppression structure, wherein the orthographic projection of the light-emitting portion on the base substrate is located within the orthographic projection of the metal suppression structure on the base substrate. The auxiliary electrode layer includes an auxiliary electrode, which is electrically connected to the first electrode and spaced apart from the metal suppression structure.
[0072] In an embodiment of the present disclosure, the metal suppression structure includes a metal repellent material that can repel the metal material used to form the auxiliary electrode when the auxiliary electrode is formed by an evaporation process. As a result, when forming the auxiliary electrode, the auxiliary electrode can be made to avoid the area where the metal suppression structure is located, that is, the auxiliary electrode finally formed is spaced apart from the metal suppression structure, so that the auxiliary electrode is confined outside the range defined by the metal suppression structure (or slightly overlaps at the edge). In an embodiment of the present disclosure, the orthographic projection of the light-emitting portion on the base substrate is located within the orthographic projection of the metal suppression structure on the base substrate. In this way, the formed auxiliary electrode can avoid the light-emitting portion, thereby preventing the auxiliary electrode from blocking the light emitted by the light-emitting portion. At the same time, the formed auxiliary electrode is electrically connected to the first electrode, which can reduce the resistance on the first electrode to improve the voltage drop problem on the first electrode, thereby improving the brightness uniformity on a large-scale display substrate using a top-emitting light-emitting device.
[0073] The display substrate of the embodiment of the present disclosure is described in detail below with reference to Figures 1 to 18. It should be noted that the figures in the embodiments of the present disclosure merely illustrate the positions of the various film layers, and the dimensions of the film layers in the figures do not represent actual values. For example, the thickness of the auxiliary electrode and the metal suppression structure is on the nanometer scale, while their horizontal dimensions are on the micrometer scale. In order to clearly illustrate multiple structures in a single figure, the thickness of the auxiliary electrode and the metal suppression structure are exaggerated in the figures. The specific dimensions of the auxiliary electrode and the metal suppression structure shall be subject to the text in the specification.
[0074] An embodiment of the present disclosure provides a display substrate. FIG1 schematically shows a plan view of the display substrate according to the embodiment of the present disclosure. Referring to FIG1 , the display substrate of the embodiment of the present disclosure includes a display area AA and a peripheral area NA located at least on one side of the display area AA.
[0075] The display area AA can have various shapes. For example, the display area AA can be provided in various shapes, such as a polygon (e.g., a rectangle) with straight edges, a circle or an ellipse with curved edges, or a semicircle or a semiellipse with both straight and curved edges. In the embodiment of the present disclosure, the display area AA is provided as a region having a quadrilateral shape with straight edges. It should be understood that this is merely an exemplary embodiment of the present disclosure and is not intended to limit the present disclosure.
[0076] The peripheral area NA may be provided on at least one side of the display area AA. In an embodiment of the present disclosure, the peripheral area NA may surround the periphery of the display area AA. In an embodiment of the present disclosure, the peripheral area NA may include a transverse portion extending in a first direction X and a longitudinal portion extending in a second direction Y.
[0077] The display substrate may further include a gate drive circuit 11 and a drive chip 12 located in the peripheral area NA. For example, the gate drive circuit 11 may be located on at least one side of the display area AA. In the embodiment shown in FIG1 , the gate drive circuit 11 is respectively located on the left and right sides of the display area AA. It should be noted that the left and right sides may be the left and right sides of the display substrate (screen) viewed by the human eye during display. For example, the drive chip 12 may be located on at least one side of the display area AA. In the embodiment shown in FIG1 , the drive chip 12 is located on the lower side of the display area AA. It should be noted that the lower side may be the lower side of the display substrate (screen) viewed by the human eye during display.
[0078] The driver chip 12 includes a data driver circuit that sequentially latches input data according to a clock signal, converts the latched data into analog signals, and then inputs them to the data lines of the display substrate. The gate driver circuit 11 is typically implemented by a shift register, which converts the clock signal into on / off voltages and outputs them to the gate lines of the display substrate.
[0079] It should be noted that although Figure 1 shows that the gate drive circuit 11 is located on the left and right sides of the display area AA and the drive chip 12 is located on the lower side of the display area AA, the embodiments of the present disclosure are not limited to this. The gate drive circuit 11 and the drive chip 12 can be located at any suitable position in the peripheral area NA.
[0080] For example, the gate driver circuit 11 can adopt GOA technology, i.e., Gate Driver on Array. In GOA technology, the gate driver circuit 11 is directly set on the array substrate to replace the external chip. Each GOA unit serves as a first-level shift register, and each level of shift register is connected to a gate line. The shift registers at each level output scanning signals in turn in sequence to achieve row-by-row scanning of the pixel unit. In some embodiments, each level of shift register can also be connected to multiple gate lines. In this way, it can adapt to the development trend of high resolution and narrow frame of display substrates. The driver chip 12 can be folded to the back side of the display substrate through structures such as flip-chip film.
[0081] FIG. 2 schematically shows one of the cross-sectional views of a display substrate according to an embodiment of the present disclosure.
[0082] 1 and 2 , the display substrate may include a base substrate 100 and a plurality of pixel units P disposed on the base substrate 100 and located in a display area AA. Each pixel unit P may include a plurality of sub-pixels PX, for example, a first sub-pixel, a second sub-pixel, and a third sub-pixel. For ease of understanding, the first sub-pixel, the second sub-pixel, and the third sub-pixel may be described as a red sub-pixel Pr, a green sub-pixel Pg, and a blue sub-pixel Pb, respectively. However, the embodiments of the present disclosure are not limited thereto.
[0083] For example, each pixel unit P may include multiple sub-pixels PX, such as a first sub-pixel, a second sub-pixel, and a third sub-pixel. The pixel unit may be divided into a first pixel unit and a second pixel unit, wherein the first sub-pixel and the second sub-pixel of the first pixel unit are described as a red sub-pixel Pr and a green sub-pixel Pg, respectively, and the first sub-pixel and the second sub-pixel of the second pixel unit are described as a blue sub-pixel Pb and a green sub-pixel Pg, respectively. The third sub-pixels of the two pixel units are borrowed from each other. For example, the third sub-pixel of the first pixel unit may be described as a blue sub-pixel Pb borrowed from the second pixel unit, and the third sub-pixel of the second pixel unit may be described as a red sub-pixel Pr borrowed from the first pixel unit. In this embodiment, the red sub-pixels Pr and the blue sub-pixels Pb are located in different rows, a portion of the green sub-pixels Pg on the display substrate is located in the same row as the red sub-pixels Pr, and the red sub-pixels Pr and the green sub-pixels Pg are arranged alternately in the row direction, and another portion of the green sub-pixels Pg on the display substrate is located in the same row as the blue sub-pixels Pb, and the blue sub-pixels Pb and the green sub-pixels Pg are arranged alternately in the row direction.
[0084] Each sub-pixel PX may include a light-emitting device L and a pixel circuit for driving the light-emitting device L. For example, a red sub-pixel Pr may include a first light-emitting device and a first pixel circuit for driving the first light-emitting device, and the first light-emitting device may emit red light; a green sub-pixel Pg may include a second light-emitting device and a second pixel circuit for driving the second light-emitting device, and the second light-emitting device may emit green light; and a blue sub-pixel Pb may include a third light-emitting device and a third pixel circuit for driving the third light-emitting device, and the third light-emitting device may emit blue light.
[0085] In some specific embodiments, the display substrate further includes a light-emitting functional layer E disposed on the base substrate 100 and a first electrode layer 110 disposed on a side of the light-emitting functional layer E facing away from the base substrate 100 .
[0086] In the embodiments of the present disclosure, the light-emitting device L can be an organic light-emitting diode (OLED) or a quantum-dot light-emitting diode (QLED). Both are active light-emitting devices with advantages such as self-luminescence, wide viewing angle, high contrast, low power consumption, extremely high response speed, light weight, flexibility, and low cost. For clarity, unless otherwise specified, the following description of the display substrate of the embodiments of the present disclosure uses the light-emitting device L as an example, in which the light-emitting device L is an organic light-emitting diode.
[0087] Exemplarily, the display substrate further includes a second electrode layer 120 located between the light-emitting functional layer E and the base substrate 100. The light-emitting device L includes a light-emitting portion E1, a first electrode 111 located in the first electrode layer 110, and a second electrode 121 located in the second electrode layer 120. One of the second electrode 121 and the first electrode 111 is an anode, and the other is a cathode. For example, the light-emitting device L is a top-emitting light-emitting device. The first electrode 111 is a cathode, and the second electrode 121 is an anode. The first electrode 111 of the light-emitting device L is made of a metal or alloy with a low work function. To obtain higher light transmittance, the thickness of the first electrode 111 is relatively thin, specifically, the thickness of the first electrode 111 is reduced to less than 20 nm. The light-emitting functional layer E includes a pixel defining layer 150. The pixel defining layer 150 includes a pixel opening 151. A light-emitting material may be formed in the pixel opening 151. In the embodiments of the present disclosure, a light-emitting material can be formed in the pixel opening 151 using a high-definition mask (FMM) and an evaporation process. In addition to being located within the pixel opening 151, the light-emitting material may also cover the sidewalls of the pixel opening 151 and even the surface of the pixel defining layer 151 facing away from the base substrate 100. The light-emitting portion E1 in the embodiments of the present disclosure may refer to the portion of the light-emitting material located within the pixel opening 151, as shown in FIG2 . In other words, the light-emitting portion E1 in the embodiments of the present disclosure may refer to the portion of the light-emitting material located within the pixel opening 151.
[0088] The pixel circuit includes multiple transistors, for example, an input transistor, a driving transistor, a reset transistor, a light emitting control transistor, and a storage capacitor, etc. The second electrode 121 can be electrically connected to the driving transistor to transmit the driving current provided by the driving transistor to the light emitting portion E1.
[0089] The light-emitting portion E1 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are stacked in sequence away from the base substrate 100. The first electrode 111 is electrically connected to a power line that can provide a constant low-level signal. In this way, the light-emitting portion E1 can emit light in response to the electrical signal applied to the first electrode 111 and the second electrode 121, thereby realizing a display function.
[0090] FIG3 schematically shows one of the cross-sectional views of a metal inhibition structure according to an embodiment of the present disclosure, and FIG4 schematically shows one of the cross-sectional views of a metal inhibition structure and an auxiliary electrode according to an embodiment of the present disclosure.
[0091] 3 and 4 , in an embodiment of the present disclosure, the display substrate further includes a metal inhibition layer 130 disposed on a side of the first electrode layer 110 facing away from the base substrate 100, and an auxiliary electrode layer 140 disposed on a side of the first electrode layer 110 facing away from the base substrate 100. The metal inhibition layer 130 includes a metal inhibition structure 131, and the auxiliary electrode layer 140 includes an auxiliary electrode 141.
[0092] FIG. 5 schematically shows one of the plan views of a metal suppression structure and an auxiliary electrode according to an embodiment of the present disclosure.
[0093] 5 , in an embodiment of the present disclosure, a plurality of light-emitting devices L are provided on the display substrate. The number of metal suppression structures 131 and auxiliary electrodes 141 may also be multiple. The multiple metal suppression structures 131 may be spaced apart from each other. The auxiliary electrodes 141 may be disposed on the periphery of the metal suppression structures 131. The auxiliary electrodes 141 may be a continuous structure or a plurality of block structures. The specific structure may be determined based on actual needs and is not limited here. For example, the auxiliary electrodes 141 may be a continuous ring structure, and adjacent auxiliary electrodes 141 may be connected to form an integrated structure.
[0094] For each light-emitting device L, a metal suppression structure 131 and a corresponding auxiliary electrode 141 can be provided. Alternatively, for multiple light-emitting devices L, a metal suppression structure 131 and a corresponding auxiliary electrode 141 can be provided. The details will be explained in detail below and are not detailed here. For clarity, unless otherwise specified, the following description of the display substrate of the present disclosure uses a single light-emitting device L and the metal suppression structure 131 and the corresponding auxiliary electrode 141 provided therewith as an example.
[0095] The metal suppression structure 131 may include a metal-repelling material. A metal-repelling material may be a material that repels the metal material and does not adhere to it during the vacuum evaporation process. The metal-repelling material may be an organic small molecule compound or an inorganic compound. For example, the metal suppression structure 131 may include amines, diamines, and triamines.
[0096] In the embodiment of the present disclosure, when the auxiliary electrode 141 is formed on the first electrode 111 through an evaporation process, the metal suppression structure 131 is used to make the auxiliary electrode 141 avoid the area where the metal suppression structure 131 is located. That is, the auxiliary electrode 141 formed in the end is spaced apart from the metal suppression structure 131, so that the auxiliary electrode 141 is confined outside the range defined by the metal suppression structure 131 (or slightly overlaps at the edge).
[0097] In the embodiment of the present disclosure, the orthographic projection of the light-emitting portion E1 on the base substrate 100 is located within the orthographic projection of the metal suppression structure 131 on the base substrate 100. Therefore, the auxiliary electrode 141 can be formed away from the light-emitting portion E1, thereby preventing the auxiliary electrode 141 from affecting the light emission of the light-emitting portion E1. This increases the design flexibility of the auxiliary electrode 141. For example, because the auxiliary electrode 141 can be away from the light-emitting portion E1, there is no need to consider the light transmittance of the auxiliary electrode 141. The auxiliary electrode 141 can be set thicker or made of a metal or alloy material with a low resistivity. This can effectively reduce the resistance of the first electrode 141. Alternatively, while achieving an optimal resistance reduction effect, the space occupied by the auxiliary electrode 141 can be reduced.
[0098] In the disclosed embodiment, the metal suppression structure 131 is made of a metal-repellent material with a light transmittance close to that of highly transparent materials such as glass. Therefore, the metal suppression structure 131 has a negligible effect on the light emitted by the light-emitting portion E1. Furthermore, since the metal suppression structure 131 does not require electrical conductivity considerations, it can be designed to be relatively thin (e.g., close to the thickness of the first electrode 111), thereby avoiding any impact on the thickness of the display substrate.
[0099] At the same time, the auxiliary electrode 141 is electrically connected to the first electrode 111, which can reduce the resistance on the first electrode 111 to improve the voltage drop problem on the first electrode 111, thereby improving the brightness uniformity on a large-scale display substrate using a top-emitting light-emitting device.
[0100] Hereinafter, display substrates according to some exemplary embodiments of the present disclosure will be further described with reference to FIG. 1 to FIG. 18 .
[0101] 2 to 5 , in some specific embodiments, the light-emitting functional layer E includes a pixel defining layer 150, the pixel defining layer 150 includes a pixel opening 151 and a first defining portion 152 surrounding the pixel opening 151, and the light-emitting portion E1 of the light-emitting device L is located in the pixel opening 151. The auxiliary electrode 141 at least partially surrounds the metal inhibition structure 131, and the orthographic projection of the auxiliary electrode 141 on the base substrate 100 is located within the orthographic projection of the first defining portion 152 on the base substrate 100.
[0102] In an embodiment of the present disclosure, the pixel defining layer 150 covers the side of the second electrode 121 layer away from the base substrate 100, and the pixel opening 151 exposes part of the second electrode layer 120, specifically, at a position corresponding to the light-emitting device L, the second electrode 121 of the light-emitting device L located in the second electrode layer 120 is exposed, so that the light-emitting portion E1 formed in the pixel opening 151 can be electrically connected to the exposed second electrode 121.
[0103] A first electrode layer 110 is formed on the side of the pixel defining layer 150 facing away from the base substrate 100. A first electrode 111 of the light-emitting device L located in the first electrode layer 110 covers the pixel opening 151 and is electrically connected to the light-emitting portion E1 in the pixel opening 151. Thus, the first electrode 111 and the second electrode 121 can provide corresponding drive signals to the light-emitting portion E1 to drive the light-emitting portion E1 to emit light. For example, the first electrode 111 is electrically connected to a power line that provides a constant low-level voltage signal, and the second electrode 121 is electrically connected to a drive transistor in the pixel circuit. As a result, the light-emitting portion E1 can emit light at a corresponding brightness based on the drive current provided by the drive transistor.
[0104] The metal suppression structure 131 is covered on the first electrode layer 110, specifically on the light-emitting side of the light-emitting portion E1 of the light-emitting device L. Both the metal suppression structure 131 and the first electrode 111 have good light transmittance. Exemplarily, the transmittance of the metal suppression structure 131 is greater than or equal to the transmittance of the first electrode 111.
[0105] The auxiliary electrode 141 may continuously or discontinuously surround the metal suppression structure 131. For example, the auxiliary electrode 141 may be a continuous ring-shaped structure, or the auxiliary electrode 141 may be a structure formed by a plurality of discontinuous strips. Optionally, the orthographic projection of the metal suppression structure 131 on the base substrate 100 not only covers the orthographic projection of the light-emitting portion E1 of the light-emitting device L on the base substrate 100, but may also appropriately extend outward, thereby reducing the area for forming the auxiliary electrode 141 and limiting the size of the auxiliary electrode 141. This further prevents the orthographic projection of the auxiliary electrode 141 on the base substrate 100 from overlapping with the orthographic projection of the light-emitting portion E1 of the light-emitting device L on the base substrate 100, thereby preventing the auxiliary electrode 141 from blocking the light-emitting portion E1.
[0106] In some specific embodiments, the metal suppression structure 131 includes a first middle portion 1311 and a first edge portion 1312 surrounding the first middle portion 1311. In the thickness direction of the display substrate, the first edge portion 1312 overlaps with the first defining portion 152. The thickness hf of the auxiliary electrode 141 is greater than or equal to the thickness hj of the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 at least partially overlaps with the first edge portion 1312.
[0107] For example, the metal suppression structure 131 may be disposed directly opposite the pixel opening 151. For example, the center of the metal suppression structure 131 may coincide with the center of the pixel opening 151. The metal suppression structure 131 may extend outward from the center until it extends beyond the pixel opening 151 and overlaps with the first edge portion 1312 in the thickness direction of the display substrate. In this way, the light-emitting portion E1 in the pixel opening 151 may be fully covered, thereby ensuring that no auxiliary electrode 141 exists above the light-emitting portion E1.
[0108] In the embodiments of the present disclosure, the morphology of the metal inhibition structure 131 directly affects the morphology of the auxiliary electrode 141. Specifically, the morphology of the auxiliary electrode 141 can be adjusted by controlling the thickness hj of the metal inhibition structure 131. In some specific embodiments, the thickness hf of the auxiliary electrode 141 is negatively correlated with the thickness hj of the metal inhibition structure 131. A first distance w1 is defined between the orthographic projection of the auxiliary electrode 141 on the base substrate 100 and the orthographic projection of the light-emitting portion E1 on the base substrate 100. This first distance w1 is positively correlated with the thickness hj of the metal inhibition structure 131. For example, the greater the thickness hj of the metal inhibition structure 131, the smaller the thickness hf of the auxiliary electrode 141. Consequently, the area of the auxiliary electrode 141 formed by the evaporation process is smaller on the side closest to the base substrate 100 and larger on the side facing away from the base substrate 100. For example, the cross-section of the auxiliary electrode 141 along its width may be an inverted trapezoid. The smaller the thickness hf of the auxiliary electrode 141, the smaller its width, i.e., the larger the first distance w1.
[0109] Therefore, by configuring the thickness hj of the metal suppression structure 131, the distance between the auxiliary electrode 141 and the light-emitting portion E1 can be controlled, so that the auxiliary electrode 141 is restricted outside the pixel opening 151. For example, the orthographic projection of the auxiliary electrode 141 on the base substrate 100 is located within the orthographic projection of the first limiting portion 152 on the base substrate 100, thereby avoiding the auxiliary electrode 141 from blocking the light-emitting portion E1.
[0110] In the embodiment of the present disclosure, the morphology of the auxiliary electrode 141 is controlled by adjusting the thickness hj of the metal suppression structure 131. Thus, when forming auxiliary electrodes 141 of different sizes, there is no need to change the opening size of the mask used to prepare the metal suppression structure 131. Only the preparation time and the feed amount of the metal suppression structure 131 need to be adjusted to control the morphology and size of the auxiliary electrode 141. This process is convenient, low-cost, and flexible and easy to adjust.
[0111] Referring to FIG. 4 , in some specific embodiments, the thickness hj of the metal suppression structure 131 can be reduced, while the thickness hf of the auxiliary electrode 141 can be increased. This allows the auxiliary electrode 141 to be larger without obstructing the light-emitting portion E1, thereby significantly reducing the resistance on the first electrode 111 and improving voltage drop and display uniformity. For example, the ratio of the thickness hf of the auxiliary electrode 141 to the thickness hj of the metal suppression structure 131 can be set to 1:1 to 100:1. For example, the thickness hf of the auxiliary electrode 141 can be set to 50 nm to 200 nm, and the thickness hj of the metal suppression structure 131 can be set to 2 nm to 50 nm.
[0112] 3 and 4 , in some specific embodiments, the first edge portion 1312 includes a first inclined portion 1312 a, and a first angle a1 is formed between the surface of the first inclined portion 1312 a away from the base substrate 100 and the first electrode 111, and a second angle a2 is formed between the surface of the auxiliary electrode 141 adjacent to the first inclined portion 1312 a and the first electrode 111, and the first angle a1 is substantially the same as the second angle a2.
[0113] In the embodiment of the present disclosure, the first angle a1 specifically refers to the acute angle between the inclined surface of the first inclined portion 1312a and the first electrode 111. The second angle a2 specifically refers to the acute angle between the inclined surface of the auxiliary electrode 141 and the first electrode 111, and the two angles are substantially the same. For example, the first angle a1 can be set to 2° to 30°. The second angle a2 can be set to 1° to 30°. Exemplarily, the lower limit of the first angle a1 is set larger than the lower limit of the second angle a2, thereby overcoming the manufacturing process limitations and ensuring that the second angle a2 can reach 1°.
[0114] In the embodiment of the present disclosure, the first angle a1 and the second angle a2 are substantially the same, that is, the first inclined portion 1312a and the inclined surface of the auxiliary electrode 141 are substantially parallel. For example, the thickness hf of the auxiliary electrode 141 can be adjusted to an appropriate value (not exceeding the desired thickness) by controlling the evaporation time and the amount of material to ensure that the inclined surfaces of the first inclined portion 1312a and the auxiliary electrode 141 are parallel.
[0115] In some specific embodiments, the cross-sectional shape of the metal inhibition structure 131 along the direction perpendicular to the base substrate 100 includes a regular trapezoid or an inverted trapezoid. For example, the cross-sectional shape of the metal inhibition structure 131 along the direction perpendicular to the base substrate 100 is a regular trapezoid. In this way, an opening with a width gradually narrowing as it approaches the base substrate 100 can be formed between adjacent metal inhibition structures 131. This facilitates the formation of the auxiliary electrode 141 with a narrow bottom and a wide top between the gaps between adjacent metal inhibition structures 131 through an evaporation process (for example, referring to FIG. 4 , the auxiliary electrode 141 has an inverted trapezoidal shape along the cross-sectional shape perpendicular to the base substrate 100).
[0116] Exemplarily, a dimension dq of the first inclined portion 1312 a may be set to 0.1 μm to 2 μm in a direction in which the edge of the metal inhibition structure 131 points to the center of the metal inhibition structure 131 .
[0117] In other specific embodiments, the volume of the auxiliary electrode 141 can be reduced by adjusting the thickness hj of the metal suppression structure 131 to improve the shielding of the light emitting portion E1 at large angles (eg, greater than 45°) by the auxiliary electrode 141 .
[0118] FIG6 schematically shows a second cross-sectional view of the metal suppression structure according to an embodiment of the present disclosure, and FIG7 schematically shows a second cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure.
[0119] 6 and 7 , in some embodiments, the metal suppression structure 131 includes a first middle portion 1311 and a first edge portion 1312 surrounding the first middle portion 1311. In the thickness direction of the display substrate, the first edge portion 1312 overlaps the first defining portion 152. The thickness hf of the auxiliary electrode 141 is less than the thickness hj of the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 is spaced apart from the first edge portion 1312.
[0120] In the embodiment of the present disclosure, the thickness hj of the metal suppression structure 131 can be increased to reduce the thickness hf of the auxiliary electrode 141. Referring to FIG7 , the cross-section of the auxiliary electrode 141 is an inverted trapezoid. The reduction in the thickness of the auxiliary electrode 141 can reduce the space it occupies in the horizontal direction, thereby no longer overlapping with the first edge portion 1312 in the thickness direction of the display substrate. Compared with the previous embodiment, the volume of the auxiliary electrode 141 in this embodiment is reduced, thereby improving the shielding of the auxiliary electrode 141 from large-angle light from the light-emitting portion E1.
[0121] In some specific embodiments, the ratio of the thickness hf of the auxiliary electrode 141 to the thickness hj of the metal inhibition structure 131 is set to 1:20 to 2:5. For example, the thickness hf of the auxiliary electrode 141 can be set to 5 nm to 20 nm, and the thickness hj of the metal inhibition structure 131 can be set to 50 nm to 100 nm.
[0122] In an embodiment of the present disclosure, the first angle a1 may be set to 5° to 30°, and the second angle a2 may be set to 5° to 30°.
[0123] Exemplarily, the size of the surface of the auxiliary electrode 141 close to the base substrate 100 in the first direction X can be set to 1 μm to 15 μm, and the size of the surface of the auxiliary electrode 141 away from the base substrate 100 in the first direction X can be controlled by the thickness hf of the auxiliary electrode 141 and the size of the second angle a2.
[0124] In some specific embodiments, the edge of at least one metal inhibition structure 131 overlaps with the adjacent first defining portion 152 in the thickness direction of the display substrate, and the overlapping portion has a first overlap dimension dx. The first overlap dimension dx is less than or equal to the width dimension df of the surface of the auxiliary electrode 141 on the side closest to the base substrate 100. For example, the first overlap dimension dx is set to 1 μm to 10 μm. In embodiments of the present disclosure, the auxiliary electrode 141 can be strip-shaped, and the width direction of the auxiliary electrode 141 can be perpendicular to its extension direction. For example, the width dimension df of the auxiliary electrode 141 can be set to 1 to 15 μm.
[0125] For example, in a direction from the edge of metal inhibition structure 131 toward the center of metal inhibition structure 131, dimension dq of first inclined portion 1312a is less than or equal to first overlap dimension dx. For example, in the embodiment of the present disclosure, first overlap dimension dx is set to 1 μm to 10 μm, and first inclined portion 1312a may be set to 3 μm to 10 μm.
[0126] In some specific embodiments, the display substrate includes a plurality of light-emitting devices L, and the metal inhibition layer 130 includes a plurality of metal inhibition structures 131. At least one metal inhibition structure 131 is disposed corresponding to at least one light-emitting device L, and different metal inhibition structures 131 are disposed corresponding to different light-emitting devices L. The orthographic projection of the at least one metal inhibition structure 131 on the base substrate 100 overlaps the orthographic projection of the light-emitting portion E1 of the light-emitting device L disposed corresponding thereto on the base substrate 100. The different metal inhibition structures 131 are disposed at intervals from each other.
[0127] In the embodiment of the present disclosure, the plurality of light emitting devices L may be arranged in an array along a first direction X and a second direction Y. However, the embodiment of the present disclosure is not limited thereto. For example, the plurality of light emitting devices L may also be arranged in an array along a direction oblique to the first direction X and the second direction Y.
[0128] 4 and 5 , in the embodiment of the present disclosure, a metal suppression structure 131 may be provided for each light-emitting device L. When a metal suppression structure 131 is provided for each light-emitting device L, an auxiliary electrode 141 may be provided around the periphery of each light-emitting device L. Thus, the auxiliary electrode 141 may be provided over a larger area.
[0129] Figure 8 schematically shows a third cross-sectional view of the metal suppression structure according to an embodiment of the present disclosure, Figure 9 schematically shows a third cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure, Figure 10 schematically shows a second plan view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure, Figure 11 schematically shows one of the schematic views of improving the auxiliary electrode from blocking light output at a large angle according to an embodiment of the present disclosure, Figure 12 schematically shows a fourth cross-sectional view of the metal suppression structure according to an embodiment of the present disclosure, Figure 13 schematically shows a fourth cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure, Figure 14 schematically shows a third plan view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure, and Figure 15 schematically shows a second schematic view of improving the auxiliary electrode from blocking light output at a large angle according to an embodiment of the present disclosure.
[0130] 8 to 15 , in some specific embodiments, a metal inhibition structure 131 may be provided for each of the plurality of light-emitting devices L. For example, in some specific embodiments, the plurality of light-emitting devices L include a plurality of groups, at least one group including a plurality of light-emitting devices L, and at least one metal inhibition structure 131 is provided corresponding to the at least one group of light-emitting devices L. The orthographic projection of the at least one metal inhibition structure 131 on the base substrate 100 continuously covers the orthographic projection of the light-emitting portion E1 of each light-emitting device L in the group of light-emitting devices L provided with the at least one metal inhibition structure 131 on the base substrate 100.
[0131] In the embodiments of the present disclosure, when a metal suppression structure 131 is provided for multiple light-emitting devices L, the metal suppression structure 131 is continuously provided between adjacent light-emitting devices L. This eliminates the need for an auxiliary electrode 141 to be formed between the two light-emitting devices L. Compared to the previous embodiments, the area of the auxiliary electrode 141 in this embodiment is reduced, which further improves the ability of the auxiliary electrode 141 to block wide-angle light from the light-emitting portion E1.
[0132] The metal suppression structure 131 continuously covers a group of light-emitting devices L, and the auxiliary electrode 141 is located outside the metal suppression structure 131, that is, outside the area where the group of light-emitting devices L is located. Referring to Figures 11 and 15 , for two adjacent light-emitting devices L in the same group, no auxiliary electrode 141 will be formed between them. Therefore, the auxiliary electrode 141 will not block the wide-angle light between the two light-emitting devices L.
[0133] In some specific embodiments, the plurality of light-emitting devices L in at least one group of light-emitting devices L are arranged along a first direction X. Alternatively, the plurality of light-emitting devices L in at least one group of light-emitting devices L are arranged in an array along the first direction X and the second direction Y. In other words, in the embodiments of the present disclosure, a metal inhibition structure 131 may be provided for a plurality of light-emitting devices L adjacent to each other along the first direction X, or a metal inhibition structure 131 may be provided for a plurality of light-emitting devices L adjacent to each other along the first direction X and the second direction Y.
[0134] When a group of light emitting devices L includes the light emitting devices L arranged along the first direction X, a large-angle light between two adjacent light emitting devices L along the first direction may not be blocked by the auxiliary electrode 141 .
[0135] When a group of light-emitting devices L includes light-emitting devices L arranged in an array along the first direction X and the second direction Y, large-angle light between two adjacent light-emitting devices L along the first direction X and two adjacent light-emitting devices L along the second direction Y may not be blocked by the auxiliary electrode 141. In this way, the blocking of large-angle light by the auxiliary electrode 141 can be further reduced.
[0136] In some specific embodiments, a plurality of light emitting devices L are arranged in an array along a first direction X and a second direction Y, and the light emitting colors of two adjacent light emitting devices L arranged along the first direction are different, and the light emitting colors of two adjacent light emitting devices L arranged along the second direction are different.
[0137] For example, a portion of the green sub-pixels Pg on the display substrate is located in the same row as the red sub-pixels Pr, and in the row direction, the red sub-pixels Pr and the green sub-pixels Pg are arranged alternately, and another portion of the green sub-pixels Pg on the display substrate is located in the same row as the blue sub-pixels Pb, and in the row direction, the blue sub-pixels Pb and the green sub-pixels Pg are arranged alternately.
[0138] With reference to Figures 8 to 11 , in some embodiments, a metal suppression structure 131 can be provided for four sub-pixels PX that are adjacent to each other in the first direction X and the second direction Y. Accordingly, an auxiliary electrode 141 surrounds the metal suppression structure 131, or in other words, surrounds the four sub-pixels PX. No auxiliary electrode 141 is provided between any two of these sub-pixels PX, thereby preventing the auxiliary electrode 141 from blocking high-angle light between any two of these sub-pixels PX. It should be noted that in Figure 11 , the upper figure is a schematic diagram of the auxiliary electrode 141 blocking high-angle light, corresponding to the embodiment of Figure 5 , and the lower figure is a schematic diagram of the auxiliary electrode 141 blocking high-angle light, corresponding to the embodiment of Figure 10 .
[0139] With reference to Figures 12 to 15 , in some embodiments, a metal suppression structure 131 can be provided for nine sub-pixels PX that are adjacent to each other in the first direction X and the second direction Y. Accordingly, an auxiliary electrode 141 surrounds the metal suppression structure 131, or in other words, surrounds the nine sub-pixels PX. No auxiliary electrode 141 is provided between any two of these nine sub-pixels PX, thereby preventing the auxiliary electrode 141 from blocking high-angle light between any two of these sub-pixels PX. It should be noted that in Figure 11 , the upper figure is a schematic diagram of the auxiliary electrode 141 blocking high-angle light, corresponding to the embodiment of Figure 5 , and the lower figure is a schematic diagram of the auxiliary electrode 141 blocking high-angle light, corresponding to the embodiment of Figure 14 .
[0140] Figure 16 schematically shows a fifth cross-sectional view of the metal suppression structure according to an embodiment of the present disclosure, Figure 17 schematically shows a fifth cross-sectional view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure, and Figure 18 schematically shows a fourth plan view of the metal suppression structure and the auxiliary electrode according to an embodiment of the present disclosure.
[0141] 16 to 18 , in some specific embodiments, there is a second spacing w2 between the light-emitting portions E1 of two adjacent light-emitting devices L in the same group of light-emitting devices L, and a third spacing w3 between the light-emitting portions E1 of two adjacent light-emitting devices L in adjacent groups of light-emitting devices L, and the second spacing w2 is smaller than the third spacing w3.
[0142] In an embodiment of the present disclosure, the distance between two adjacent light-emitting portions E1 can be limited by the size of the first defining portion 152 of the pixel defining layer 150. For example, with reference to Figures 16 to 18, when the size of the first defining portion 152 in the horizontal direction is larger, the distance between the two light-emitting portions E1 located on both sides of the first defining portion 152 is larger when the light-emitting portion E1 is formed. When the size of the first defining portion 152 in the horizontal direction is smaller, the distance between the two light-emitting portions E1 located on both sides of the first defining portion 152 is smaller when the light-emitting portion E1 is formed.
[0143] In the embodiment of the present disclosure, this method is equivalent to converging a group of light-emitting devices L toward the center of the area where the group is located. In this way, a larger space can be created between adjacent groups of light-emitting devices L without changing the light-emitting area of the light-emitting devices L, and the auxiliary electrode 141 can be formed in this space. Compared with the previous embodiment, the auxiliary electrode 141 in this embodiment can maintain a larger distance from the light-emitting portion E1 while achieving the same resistance improvement effect, thereby further improving the auxiliary electrode 141's shielding of large-angle light.
[0144] Exemplarily, a ratio of the second interval w2 to the third interval w3 may be set to 1:2. For example, the second interval w2 may be set to 5 μm to 20 μm, and the third interval w3 may be set to 10 μm to 40 μm.
[0145] In some specific embodiments, the dimension df of the surface of at least one auxiliary electrode 141 near the base substrate 100 in the width direction is less than or equal to the second spacing w2. For example, the dimension df of the surface of the auxiliary electrode 141 near the base substrate 100 in the width direction can be set to 1 μm to 20 μm. Therefore, it can be seen that compared to the above embodiment, the dimension df of the surface of the auxiliary electrode near the base substrate 100 in the width direction can be set larger, thereby better reducing the resistance of the first electrode 111.
[0146] In some specific embodiments, an edge of at least one metal inhibition structure 131 overlaps with an adjacent first defining portion 152 in the thickness direction of the display substrate, and the overlapping portion has a first overlap dimension dx. The first overlap dimension dx is less than or equal to the width dimension of the surface of the auxiliary electrode 141 on the side closest to the base substrate 100. For example, the first overlap dimension dx can be set to 1 μm to 10 μm.
[0147] For example, in a direction from the edge of the metal inhibition structure 131 toward the center of the metal inhibition structure 131, the dimension dq of the first inclined portion 1312a is less than or equal to the first overlap dimension dx. For example, if the first overlap dimension dx is set to 1 μm to 10 μm, the dimension dq of the first inclined portion 1312a may be set to 0.1 μm to 2 μm.
[0148] 5 , 10 , and 14 , in some specific embodiments, the display substrate includes a plurality of auxiliary electrodes 141 , at least one auxiliary electrode 141 surrounds at least one metal inhibition structure 131 , and two adjacent auxiliary electrodes 141 share the same side, so that the plurality of auxiliary electrodes 141 form an integrated structure, thereby significantly reducing resistance.
[0149] In some specific embodiments, the metal inhibition structure 131 includes a metal mutually exclusive material, and the transmittance of the metal mutually exclusive material is greater than or equal to the transmittance of the first electrode. For example, the metal inhibition structure 131 may include: amine, diamine, triamine materials, such as N, N'-diphenyl-N, N'-di(9-phenyl-9H-carbazole-3-yl) biphenyl-4, 4'-diamine, N-(biphenyl-4-yl)-9, 9-dimethyl-N-(4-(9-phenyl-9H-carbazole-3-yl)phenyl)-9H-fluorene-2-amine, 4, 4', 4"-tris(3-methylphenylphenylamino)triphenylamine, N, N'-di(1 -naphthyl)-N,N′-diphenyl[1,1′-biphenyl]-4,4′-diamine or 4,4′-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl, N4,N4′-diphenyl-N4,N4′-bis(9-phenyl-9H-carbazol-3-yl)diphenyl-4,4′-diamine, N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, etc.
[0150] In the embodiments of the present disclosure, a metal suppression structure is used to form an auxiliary electrode 141. The auxiliary electrode 141 can be positioned away from the light-emitting portion E1. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 can be set to 1 to 20 μm, and the thickness of the auxiliary electrode 141 can be set to 5 to 100 nm. By adjusting the relative position and thickness of the metal suppression structure and the auxiliary electrode 141, the desired auxiliary electrode 141 can be precisely fabricated, reducing the resistance of the first electrode 111. While reducing the resistance of the first electrode 111, by optimizing the width and thickness of the auxiliary electrode 141, the effect of the auxiliary electrode 141 on the viewing angle of the light-emitting device L is reduced.
[0151] The metal suppression structure of the embodiment of the present disclosure and the auxiliary electrode formed using the metal suppression structure are described below in conjunction with the manufacturing process of the display substrate.
[0152] In step S11 , a pixel circuit, a second electrode 121 , a pixel defining layer 150 , a light emitting portion E1 and a first electrode 111 are fabricated on a cleaned glass substrate.
[0153] In step S12, a metal repellent material is deposited on the first electrode 111 using a high-definition metal mask to form a metal inhibition structure 131. The metal repellent material may include amine, diamine, or triamine materials, such as N,N'-diphenyl-N,N'-di(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4'-diamine, N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine, 4,4',4"-tri(3-methyl)-1-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] ... N,N′-di(1-naphthyl)-N,N′-diphenyl[1,1′-biphenyl]-4,4′-diamine or 4,4′-di[N-(3-methylphenyl)-N-phenylamino]biphenyl, N4,N4′-diphenyl-N4,N4′-bis(9-phenyl-9H-carbazol-3-yl)diphenyl-4,4′-diamine, N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, and the like.
[0154] The metal inhibition structure 131 covers the light-emitting portion E1 of each light-emitting device L and is disconnected above the pixel-defining layer 150, discontinuously extending between different light-emitting devices. The disconnection width dd can be set to 1 to 20 μm, and the thickness hj of the metal inhibition structure 131 can be set to 2 to 50 nm. The metal inhibition structure 131 is 1 to 10 μm larger than the pixel opening (this portion is also referred to as the first overlap dimension dx). The edge of the metal inhibition structure 131 has a first inclined portion 1312a with a width of 0.1 to 2 μm, and a first angle a1 (or slope angle) of 2 to 30°.
[0155] In step S13, the auxiliary electrode 141 is vacuum evaporated. The material of the auxiliary electrode 141 may include one of the metal materials such as Mg, Ag, Al, Li, K, Ca, or alloys of the above metal materials such as MgxAg(1-x), LixAl(1-x), LixCa(1-x), and LixAg(1-x).
[0156] The auxiliary electrode 141 surrounds the metal suppression structure 131 and is spaced apart from it. The auxiliary electrode 141 overlaps the metal suppression structure 131 along the thickness direction of the display substrate. The thickness hf of the auxiliary electrode 141 is set to 50 to 200 nm. The cross-section of the auxiliary electrode 141 along its width is an inverted trapezoidal shape, meaning the top width of the auxiliary electrode 141 is greater than the bottom width. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 is set to 1 to 15 μm. The second angle a2 (or slope angle) of the auxiliary electrode 141 is 1 to 30°.
[0157] In the display substrate prepared by the above process, each light emitting device is provided with a corresponding metal inhibition structure 131, and the auxiliary cathode electrode 141 surrounds each metal inhibition structure 131. Optionally, the distance between the auxiliary cathode electrode 141 and the edge of the pixel opening is less than or equal to 5 μm.
[0158] In some other specific embodiments, a metal inhibition structure 131 is provided to cover a plurality of light emitting devices L to form an auxiliary electrode 141 surrounding the plurality of light emitting devices L. The steps include:
[0159] In step S21 , a pixel circuit, a second electrode 121 , a pixel defining layer 150 , a light emitting portion E1 and a first electrode 111 are fabricated on a cleaned glass substrate.
[0160] In step S22 , a metal-repellent material is evaporated on the first electrode 111 using a high-definition metal mask to form a metal inhibition structure 131 .
[0161] The metal inhibition structure 131 covers the light-emitting portion E1 of a group of light-emitting devices L (for example, a group includes four light-emitting devices L arranged along a first direction and a second direction). The metal inhibition structure 131 is disconnected between two adjacent groups of light-emitting devices L. The disconnected width dd can be set to 1 to 20 μm. The thickness hj of the metal inhibition structure 131 can be set to 2 to 50 nm. The metal inhibition structure 131 is 1 to 10 μm larger than the pixel opening (this portion is also referred to as the first overlap dimension dx in the previous text). The edge of the metal inhibition structure 131 has a first inclined portion 1312a with a width of 0.1 to 2 μm, and its first angle a1 (or slope angle) is 2 to 30°.
[0162] In step S23, an auxiliary electrode 141 is vacuum-deposited. The auxiliary electrode 141 surrounds the metal suppression structure 131 and is spaced apart from the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 overlaps the metal suppression structure 131. The thickness hf of the auxiliary electrode 141 is set to 50 to 200 nm. The cross-section of the auxiliary electrode 141 along its width is an inverted trapezoid, that is, the top width of the auxiliary electrode 141 is greater than the bottom width. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 is set to 1 to 15 μm. The second angle a2 (or slope angle) of the auxiliary electrode 141 is 1 to 30°.
[0163] In the display substrate prepared by the above process, the metal suppression structure 13 covers the four light-emitting devices, which can reduce the blocking of large-angle light from the light-emitting devices by the auxiliary electrode 141, thereby improving the viewing angle.
[0164] In some other specific embodiments, a metal inhibition structure 131 covering more light-emitting devices L may be formed, which specifically includes the following steps:
[0165] In step S31 , a pixel circuit, a second electrode 121 , a pixel defining layer 150 , a light emitting portion E1 and a first electrode 111 are fabricated on a cleaned glass substrate.
[0166] In step S32 , a metal-repellent material is evaporated on the first electrode 111 using a high-definition metal mask to form a metal inhibition structure 131 .
[0167] The metal inhibition structure 131 covers the light-emitting portion E1 of a group of light-emitting devices L (for example, a group includes nine light-emitting devices L arranged along a first direction and a second direction). The metal inhibition structure 131 is disconnected between two adjacent groups of light-emitting devices L. The disconnected width dd can be set to 1 to 20 μm. The thickness hj of the metal inhibition structure 131 can be set to 2 to 50 nm. The metal inhibition structure 131 is 1 to 10 μm larger than the pixel opening (this portion is also referred to as the first overlap dimension dx in the previous text). The edge of the metal inhibition structure 131 has a first inclined portion 1312a with a width of 0.1 to 2 μm, and its first angle a1 (or slope angle) is 2 to 30°.
[0168] In step S33, an auxiliary electrode 141 is vacuum-deposited. The auxiliary electrode 141 surrounds the metal suppression structure 131 and is spaced apart from the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 overlaps the metal suppression structure 131. The thickness hf of the auxiliary electrode 141 is set to 50 to 200 nm. The cross-section of the auxiliary electrode 141 along its width is an inverted trapezoid, that is, the top width of the auxiliary electrode 141 is greater than the bottom width. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 is set to 1 to 15 μm. The second angle a2 (or slope angle) of the auxiliary electrode 141 is 1 to 30°.
[0169] In the display substrate prepared by the above process, the metal suppression structure 13 covers the nine light-emitting devices L, which can reduce the blocking of large-angle light from the light-emitting devices by the auxiliary electrode 141, thereby improving the viewing angle.
[0170] In some other specific embodiments, forming the auxiliary electrode 141 with a relatively thin thickness specifically includes the following steps:
[0171] In step S41 , a pixel circuit, a second electrode 121 , a pixel defining layer 150 , a light emitting portion E1 and a first electrode 111 are fabricated on a cleaned glass substrate.
[0172] In step S42 , a metal-repellent material is evaporated on the first electrode 111 using a high-definition metal mask to form a metal inhibition structure 131 .
[0173] The metal inhibition structure 131 covers the light-emitting portion E1 of a group of light-emitting devices L (for example, a group includes one or more light-emitting devices L). The metal inhibition structure 131 is disconnected between two adjacent groups of light-emitting devices L. The disconnected width dd can be set to 1 to 20 μm. The thickness hj of the metal inhibition structure 131 can be set to 50 to 100 nm. The metal inhibition structure 131 is 1 to 10 μm larger than the pixel opening (this portion is also referred to as the first overlap dimension dx in the previous text). The edge of the metal inhibition structure 131 has a first inclined portion 1312a with a width of 0.3 to 3 μm, and its first angle a1 (or slope angle) is 5 to 50°.
[0174] In step S43, an auxiliary electrode 141 is vacuum-deposited. The auxiliary electrode 141 surrounds the metal suppression structure 131 and is spaced apart from the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 does not overlap the metal suppression structure 131. The thickness hf of the auxiliary electrode 141 is set to 5 to 20 nm. The cross-section of the auxiliary electrode 141 along its width is an inverted trapezoid, that is, the top width of the auxiliary electrode 141 is greater than the bottom width. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 is set to 1 to 15 μm. The second angle a2 (or slope angle) of the auxiliary electrode 141 is 5 to 30 degrees, and the edge of the auxiliary electrode 141 is 3 to 10 μm away from the edge of the light-emitting portion E1.
[0175] In the display substrate fabricated using the aforementioned process, the thickness hj of the metal suppression structure 131 is greater than the thickness hf of the auxiliary electrode 141. This enhances the metal repulsion of the metal suppression structure 131. This results in no vertical overlap between the metal suppression structure 131 and the auxiliary electrode 141. This reduces the width of the auxiliary electrode 141 and increases the distance between the edge of the auxiliary electrode 141 and the light-emitting portion E1, thereby minimizing light obstruction at wide viewing angles. Furthermore, since the thickness hf of the auxiliary electrode 141 is reduced to less than 20 nm, the light transmittance of the auxiliary electrode 141 is improved, similarly minimizing light obstruction at wide viewing angles.
[0176] In other specific embodiments, when adjusting the pattern size and film thickness of the metal suppression structure 131, the spacing between the light-emitting devices can also be adjusted. For high-resolution display devices (500>PPI>200ppi), the narrow pixel definition layer width (<20μm) is adjusted. After adjusting the spacing of the light-emitting devices, it is beneficial to realize the layout of the auxiliary electrode 141 without affecting the existing devices or wiring. In addition, it is also possible to increase the distance between the auxiliary electrode 141 and the edge of the light-emitting device, which has the effect of improving the viewing angle. Therefore, while adjusting the pattern size and film thickness of the metal suppression structure 131, the width of the pixel definition layer 150 can be adjusted to reserve a wider area for the auxiliary electrode 141, thereby realizing the preparation of the auxiliary electrode 141 or achieving the purpose of improving the viewing angle. Specifically comprising the following steps:
[0177] In the embodiment of the present disclosure, pixel defining layers 150 of different widths are formed, and the auxiliary electrode 141 is formed on the pixel defining layer 150 with the larger width. Specifically, the preparation process includes the following steps:
[0178] In step S51 , a pixel circuit, a second electrode 121 , a pixel defining layer 150 , a light emitting portion E1 and a first electrode 111 are fabricated on a cleaned glass substrate.
[0179] In step S52 , a metal-repellent material is evaporated on the first electrode 111 using a high-definition metal mask to form a metal inhibition structure 131 .
[0180] The metal inhibition structure 131 covers the light-emitting portion E1 of a group of light-emitting devices L (e.g., a group includes one or more light-emitting devices L). The metal inhibition structure 131 is disconnected between two adjacent groups of light-emitting devices L. The disconnected width dd can be set to 1 to 20 μm. The thickness hj of the metal inhibition structure 131 can be set to 2 to 100 nm. The metal inhibition structure 131 is 3 to 10 μm larger than the pixel opening (this portion is also referred to as the first overlap dimension dx herein). The edge of the metal inhibition structure 131 has a first inclined portion 1312a with a width of 0.1 to 2 μm, and a first angle a1 (or slope angle) of 2 to 50°. The spacing between adjacent light-emitting devices L in two adjacent groups is greater than the spacing between adjacent light-emitting devices L in the same group. For example, the spacing between adjacent light-emitting devices L in the same group can be set to 5 to 20 μm, while the spacing between adjacent light-emitting devices L in two adjacent groups can be set to 10 to 40 μm.
[0181] In step S53, an auxiliary electrode 141 is vacuum-deposited. The auxiliary electrode 141 surrounds the metal suppression structure 131 and is spaced apart from the metal suppression structure 131. In the thickness direction of the display substrate, the auxiliary electrode 141 does not overlap the metal suppression structure 131. The thickness hf of the auxiliary electrode 141 is set to 5 to 100 nm. The cross-section of the auxiliary electrode 141 along its width is an inverted trapezoid, that is, the top width of the auxiliary electrode 141 is greater than the bottom width. The width of the auxiliary electrode 141 on the side closest to the base substrate 100 is set to 1 to 20 μm. The second angle a2 (or slope angle) of the auxiliary electrode 141 is 2 to 50 degrees, and the edge of the auxiliary electrode 141 is 3 to 15 μm away from the edge of the light-emitting portion E1.
[0182] In the display substrate prepared by the above process, the metal inhibition structure 131 covers nine light-emitting devices L, and the auxiliary electrode 141 is located above the first limiting portion 151 with a larger width.
[0183] Therefore, through the above method, using the metal suppression structure 131, the auxiliary electrode 141 can be prepared outside the pixel opening, and by adjusting the relative position relationship between the pixel defining layer 150, the light-emitting device L, the metal suppression structure 131 and the auxiliary electrode 141, as well as the thickness hf relationship between the metal suppression structure 131 and the auxiliary electrode 141, the auxiliary electrode 141 that meets various needs can be accurately prepared to reduce the resistance value on the first electrode 111.
[0184] At least some embodiments of the present disclosure further provide a display panel. FIG19 schematically illustrates a plan view of a display panel according to an embodiment of the present disclosure. Referring to FIG19 , the display panel includes the display substrate described above, having a display area AA and a peripheral area NA, and related structures therein. For example, the display panel can be a liquid crystal display panel or an organic light emitting diode (OLED) display panel.
[0185] It should be understood that the display device according to the embodiment of the present disclosure has all the characteristics and advantages of the above-mentioned display substrate. Please refer to the above description for details, which will not be repeated here.
[0186] At least some embodiments of the present disclosure further provide a display device, which may include any device or product having a display function. For example, the display device may be a smartphone, a mobile phone, an e-book reader, a desktop computer (PC), a laptop PC, a netbook PC, a personal digital assistant (PDA), a portable multimedia player (PMP), a digital audio player, a mobile medical device, a camera, a wearable device (such as a head-mounted device, electronic clothing, an electronic bracelet, an electronic necklace, an electronic accessory, an electronic tattoo, or a smart watch), a television, etc.
[0187] It should be understood that the display device according to the embodiment of the present disclosure has all the characteristics and advantages of the above-mentioned display substrate. Please refer to the above description for details, which will not be repeated here.
[0188] Although some embodiments of the overall technical concept of the present disclosure have been shown and described, those skilled in the art will understand that changes may be made to these embodiments without departing from the principles and spirit of the overall technical concept, and the scope of the present disclosure is defined by the claims and their equivalents.
Claims
1. A display substrate, wherein: include: substrate substrate; A light-emitting functional layer is provided on the substrate; A first electrode layer is disposed on a side of the light-emitting functional layer away from the substrate; A metal inhibition layer is disposed on a side of the first electrode layer away from the substrate; An auxiliary electrode layer is arranged on a side of the first electrode layer away from the base substrate; as well as A light emitting device disposed on the substrate; Wherein, the light emitting device comprises a light emitting portion and a first electrode located in the first electrode layer; The metal inhibition layer comprises a metal inhibition structure, and the orthographic projection of the light emitting portion on the base substrate is located within the orthographic projection of the metal inhibition structure on the base substrate; The auxiliary electrode layer includes an auxiliary electrode, which is electrically connected to the first electrode and spaced apart from the metal suppression structure.
2. The display substrate according to claim 1, wherein: The light-emitting function layer includes a pixel defining layer, the pixel defining layer includes a pixel opening and a first defining portion surrounding the pixel opening, and the light-emitting portion of the light-emitting device is located in the pixel opening; The auxiliary electrode at least partially surrounds the metal inhibition structure, and an orthographic projection of the auxiliary electrode on the base substrate is located within an orthographic projection of the first defining portion on the base substrate.
3. The display substrate according to claim 2, wherein: The metal suppression structure includes a first middle portion and a first edge portion surrounding the first middle portion, and the first edge portion overlaps with the first limiting portion in a thickness direction of the display substrate; The auxiliary electrode has a thickness greater than or equal to a thickness of the metal suppression structure, and in a thickness direction of the display substrate, the auxiliary electrode at least partially overlaps with the first edge portion.
4. The display substrate according to claim 3, wherein: The ratio of the thickness of the auxiliary electrode to the thickness of the metal suppression structure is set to 1 ∶ 1 to 100 ∶ 1.
5. The display substrate according to claim 2, wherein: The metal suppression structure includes a first middle portion and a first edge portion surrounding the first middle portion, and the first edge portion overlaps with the first limiting portion in a thickness direction of the display substrate; The auxiliary electrode has a thickness smaller than that of the metal suppression structure, and the auxiliary electrode is spaced apart from the first edge portion in a thickness direction of the display substrate.
6. The display substrate according to claim 5, wherein: The ratio of the thickness of the auxiliary electrode to the thickness of the metal suppression structure is set to 1 ∶ 20 to 2 ∶ 5.
7. The display substrate according to any one of claims 3 to 6, wherein: The first edge portion includes a first inclined portion, a surface of the first inclined portion away from the base substrate has a first angle with the first electrode, a surface of the auxiliary electrode adjacent to the first inclined portion has a second angle with the first electrode, and the first angle is substantially the same as the second angle.
8. The display substrate according to claim 1, wherein: The metal inhibition structure has a cross-sectional shape perpendicular to the substrate including a regular trapezoid or an inverted trapezoid.
9. The display substrate according to claim 1, wherein: The thickness of the auxiliary electrode is negatively correlated with the thickness of the metal suppression structure. There is a first distance between the orthographic projection of the auxiliary electrode on the base substrate and the orthographic projection of the light emitting portion on the base substrate. The first distance is positively correlated with the thickness of the metal suppression structure.
10. The display substrate according to claim 1, wherein: The display substrate includes a plurality of the light-emitting devices, the metal inhibition layer includes a plurality of the metal inhibition structures, at least one of the metal inhibition structures is arranged corresponding to at least one of the light-emitting devices, and different metal inhibition structures are arranged corresponding to different light-emitting devices; The orthographic projection of at least one of the metal inhibition structures on the base substrate covers the orthographic projection of the light emitting portion of the light emitting device corresponding thereto on the base substrate; The different metal inhibition structures are arranged at intervals from each other.
11. The display substrate according to claim 10, wherein: The plurality of light emitting devices include a plurality of groups, at least one group includes a plurality of light emitting devices, and at least one of the metal inhibition structures is disposed corresponding to at least one group of the light emitting devices; The orthographic projection of at least one of the metal inhibition structures on the base substrate continuously covers the orthographic projection of each light emitting portion of a group of light emitting devices arranged corresponding to the at least one metal inhibition structure on the base substrate.
12. The display substrate according to claim 11, wherein: A plurality of the light emitting devices in at least one group of light emitting devices are arranged along a first direction, and two adjacent light emitting devices arranged along the first direction emit light of different colors.
13. The display substrate according to claim 11, wherein: A plurality of the light emitting devices in at least one group of light emitting devices are arranged in an array along a first direction and a second direction, and the light emitting colors of two adjacent light emitting devices arranged along the first direction are different, and the light emitting colors of two adjacent light emitting devices arranged along the second direction are different.
14. The display substrate according to claim 11, wherein: There is a second interval between the light emitting parts of two adjacent light emitting devices in the same group of light emitting devices, and there is a third interval between the light emitting parts of two adjacent light emitting devices in adjacent groups of light emitting devices, and the second interval is smaller than the third interval.
15. The display substrate according to claim 14, wherein: The dimension of the surface of at least one of the auxiliary electrodes close to the base substrate in the width direction is less than or equal to the second spacing, and the first direction includes the direction in which the auxiliary electrode points to the light-emitting portion adjacent to it.
16. The display substrate according to claim 10, wherein: An edge of at least one of the metal suppression structures overlaps with the first limiting portion adjacent thereto in a thickness direction of the display substrate, and the overlapping portion has a first overlapping size; The first overlapping dimension is smaller than or equal to the dimension of the surface of the auxiliary electrode close to the base substrate in the width direction thereof.
17. The display substrate according to any one of claims 10 to 16, wherein: The display substrate includes a plurality of the auxiliary electrodes, at least one auxiliary electrode surrounds at least one metal suppression structure, and two adjacent auxiliary electrodes share a same side.
18. The display substrate according to claim 1, wherein: The metal inhibition structure includes a metal mutually exclusive material, and the light transmittance of the metal mutually exclusive material is greater than or equal to the light transmittance of the first electrode.
19. A display panel, wherein: The display substrate comprises the display substrate as claimed in any one of claims 1 to 18.
20. A display device, wherein: Comprising the display panel as claimed in claim 19.
