Display substrate, manufacturing method thereof and display device
Patent Information
- Application Number
- CN202380008809.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-26
- Publication Date
- 2024-12-27
AI Technical Summary
In OLED display devices, the installation of cameras and sensors limits the development of screens to higher screen-to-body ratios, resulting in lower packaging reliability. This is mainly due to the problem of water and oxygen intrusion channels, and the conductive materials used in existing isolation pillars lead to packaging failure. .
A multi-layer isolation pillar structure is adopted, including isolation pillars and isolation layers of insulating materials, and recessed parts are formed through dry etching to ensure that the light-emitting layer is disconnected at the isolation pillars and avoids conduction, improving packaging reliability.
It improves the packaging reliability and product yield of the display substrate, and effectively blocks the water and oxygen intrusion channels through the multi-layer isolation column structure to prevent the occurrence of poor packaging.
Smart Images
Figure CN119213899A_ABST
Abstract
Description
Display substrate, manufacturing method thereof, and display device Technical Field
[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate and a manufacturing method thereof, and a display device. Background Art
[0002] OLED (Organic Light-Emitting Diode) display devices have been listed as a next-generation display technology with great development prospects due to their advantages such as thinness, lightness, wide viewing angle, active luminescence, continuously adjustable luminous color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high luminous efficiency and flexible display.
[0003] With increasing user expectations and fierce competition in the industry, most mobile phone manufacturers are pursuing higher screen-to-body ratios to deliver a more dazzling visual impact and win market share. However, the camera and some sensors present limitations in achieving higher screen-to-body ratios. Placing cameras and some sensors inside the display is attracting significant attention within the industry.
[0004] When placing sensors like cameras inside a display, holes need to be created. These holes can easily create channels for water and oxygen to enter the common luminescent material layer. Currently, isolation columns are primarily used to block the common luminescent material layer, thereby cutting off the water and oxygen intrusion channels and preventing packaging defects.
[0005] Summary of the Invention
[0006] The technical problem to be solved by the present disclosure is to provide a display substrate and a manufacturing method thereof, and a display device, which can improve the packaging reliability of the display substrate.
[0007] To solve the above technical problems, the embodiments of the present disclosure provide the following technical solutions:
[0008] In one aspect, a display substrate is provided, comprising:
[0009] A substrate, comprising an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area;
[0010] At least one circle of isolation column structures located in the transition region, the isolation column structure comprising a plurality of isolation columns stacked sequentially in a direction away from the base substrate and an isolation layer located on a side of the isolation columns away from the base substrate, the isolation columns surrounding the opening region, recessed portions formed on side surfaces of the isolation columns, at least portions of the isolation columns being made of insulating material, and an orthographic projection of the isolation columns on the base substrate being located within an orthographic projection of the isolation layer on the base substrate;
[0011] The display layer covers the transition area and the display area. The display layer includes a light-emitting layer. The light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
[0012] In some embodiments, the isolation column comprises:
[0013] The first pattern and the second pattern are sequentially stacked in a direction away from the base substrate, and the outer edge of the second pattern extends out of the side wall of the first pattern to form the recessed portion.
[0014] In some embodiments, the isolation column structure includes a first isolation column and a second isolation column stacked in sequence along a direction away from the base substrate, the orthographic projection of the first isolation column on the base substrate is located within the orthographic projection of the second isolation column on the base substrate, and the first isolation column and the second isolation column both include a first graphic and a second graphic stacked in sequence along a direction away from the base substrate, and the outer edge of the second graphic extends out of the side wall of the first graphic to form the recessed portion.
[0015] In some embodiments, the first pattern is an inorganic insulating pattern, and the second pattern is a first metal pattern; or
[0016] The second pattern is an inorganic insulating pattern, and the first pattern is a first metal pattern.
[0017] In some embodiments, the display substrate includes at least a first buffer layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second gate metal layer, an interlayer insulating layer, a second buffer layer, and a second source / drain metal layer, which are sequentially stacked on a base substrate.
[0018] The inorganic insulating pattern and the second gate insulating layer are provided in the same layer and made of the same material, and the first metal pattern and the first gate metal layer are provided in the same layer and made of the same material.
[0019] In some embodiments, the isolation layer includes an insulating pattern and / or a second metal pattern, and the isolation layer and the isolation column are made of different materials.
[0020] In some embodiments, the insulating pattern and the second buffer layer are provided in the same layer and made of the same material, and the second metal pattern and the second source / drain metal layer are provided in the same layer and made of the same material.
[0021] In some embodiments, the first gate insulating layer is located between the base substrate and the isolation column; the display substrate includes at least two adjacent isolation columns along a direction parallel to the base substrate, and an isolation trench structure is formed between adjacent isolation columns, and the isolation trench structure exposes the first gate insulating layer.
[0022] In some embodiments, the first gate insulating layer and the second buffer layer are made of silicon oxide, the first buffer layer, the second gate insulating layer and the interlayer insulating layer are made of silicon nitride, and the first gate metal layer and the second gate metal layer are made of Mo.
[0023] In some embodiments, the display substrate further includes:
[0024] an isolation wall located in the transition region, wherein the height of the isolation wall perpendicular to the substrate is greater than the height of the isolation column structure perpendicular to the substrate;
[0025] The isolation column structure includes:
[0026] At least one circle of first isolation column structures located on a side of the isolation wall away from the opening area;
[0027] At least one circle of second isolation column structures is located on a side of the isolation wall close to the opening area.
[0028] In some embodiments, the height of the isolation pillar structure perpendicular to the base substrate is 0.6 μm to 10 μm.
[0029] In some embodiments, the width of the recessed portion in the radial direction of the isolation pillar is 0.3 μm to 1.5 μm.
[0030] An embodiment of the present disclosure further provides a display device, comprising the above-mentioned display substrate.
[0031] The present disclosure also provides a method for manufacturing a display substrate, including:
[0032] Providing a base substrate, the base substrate comprising an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area;
[0033] At least one circle of isolation column structures is formed in the transition region, the isolation column structure comprising a plurality of isolation columns stacked sequentially in a direction away from the base substrate and an isolation layer located on a side of the isolation columns away from the base substrate, the isolation columns surrounding the opening region, recessed portions formed on side surfaces of the isolation columns, at least portions of the isolation columns being made of insulating material, and an orthographic projection of the isolation columns on the base substrate being located within an orthographic projection of the isolation layer on the base substrate;
[0034] A display layer is formed in the transition area and the display area. The display layer includes a light-emitting layer. The light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
[0035] In some embodiments, the display substrate includes a first film layer and a second film layer sequentially stacked in a direction away from the base substrate, and forming the isolation column includes:
[0036] The first film layer and the second film layer are dry-etched to form a first pattern using the first film layer and a second pattern using the second film layer, wherein the outer edge of the second pattern extends beyond the sidewall of the first pattern to form the recessed portion.
[0037] The embodiments of the present disclosure have the following beneficial effects:
[0038] In the above scheme, the isolation column structure includes a plurality of isolation columns stacked in sequence in a direction away from the base substrate, which can ensure the height of the isolation column structure so that the light-emitting layer is disconnected at the isolation column structure; the isolation column structure also includes an isolation layer, and the isolation layer and the isolation column form an undercut structure, further ensuring that the light-emitting layer is broken at the isolation column structure; in addition, at least a portion of the isolation column is made of insulating material, which is non-conductive and can prevent the isolation column from being conductive to the light-emitting layer, thereby ensuring that the package at the isolation column structure will not fail, thereby improving the packaging reliability and product yield of the display substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] 1 and 2 are schematic plan views of a display substrate according to an embodiment of the present disclosure;
[0040] 3 to 10 are schematic diagrams of manufacturing a display substrate according to an embodiment of the present disclosure;
[0041] FIG11 is a schematic plan view of a display substrate according to another embodiment of the present disclosure;
[0042] 12-14 are schematic cross-sectional views of a substrate according to another embodiment of the present disclosure.
[0043] Reference Signs 01 Substrate 02 First Buffer Layer 03 First Gate Insulation Layer 04 First Gate Metal Layer 05 Second Gate Insulation Layer 06 Second Gate Metal Layer 07 Interlayer Insulation Layer 08 Second Buffer Layer 09 Second Source / Drain Metal Layer 10 Photoresist 13 Light Emitting Layer 14 Cathode 15 Organic Planarization Layer 16 Encapsulation Layer 21 First Spacer 22 Second Spacer 23 Pattern of Interlayer Insulation Layer 24 Pattern of Second Gate Metal Layer 25 Pattern of First Gate Metal Layer 26 Pattern of Second Gate Insulation Layer 27 Insulation Pattern 28 Second Metal Pattern 011 Opening Area 012 Spacer Structure 013 Display Area 014 Isolation Wall DETAILED DESCRIPTION
[0044] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present disclosure more clear, they will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0045] In related art, isolation pillars surrounding the opening area are arranged using the source / drain metal layer of the display substrate. The source / drain metal layer adopts a Ti / Al / Ti stacked structure. The source / drain metal layer in the transition area is etched so that the Al layer of the source / drain metal layer is indented relative to the Ti layer, thereby forming isolation pillars with recessed sides. However, the isolation pillars formed by the source / drain metal layer are made of a conductive material, and the light-emitting layer of the display substrate is also made of a conductive material. Therefore, a conductive path between the light-emitting layer and the isolation pillars exists in the transition area. When the display area is powered (lit), the light-emitting layer is negatively charged, and therefore, the conductive path between the light-emitting layer and the isolation pillars in the transition area carries a negative voltage. When the display substrate is cut to form an opening area, chemical substances will enter the display substrate from the cutting edge. The ions and water vapor in the chemical substances will be transmitted into the area where the isolation column is located along the cross-section of the light-emitting layer. Under the action of the electric field and moisture, the chemical substances will react with the inorganic insulating material of the packaging layer, causing corrosion and expansion of the inorganic insulating material, and then causing the packaging layer to fail, resulting in low packaging reliability of the display substrate. In addition, the thickness of the source and drain metal layer is relatively small, resulting in a relatively small height of the isolation column formed by the source and drain metal layer, making it difficult to ensure that the light-emitting layer will not break at the isolation column.
[0046] Embodiments of the present disclosure provide a display substrate and a manufacturing method thereof, and a display device, which can improve the packaging reliability of the display substrate.
[0047] An embodiment of the present disclosure provides a display substrate, as shown in FIG1 and FIG2 , comprising a base substrate 01, the base substrate 01 comprising an opening area 011, a transition area surrounding the opening area 011, and a display area 013 surrounding the transition area. The display area 013 has a light-emitting device for display. The opening area 011 is used to mount a camera and some sensors. The transition area is located between the opening area 011 and the display area 013.
[0048] The display substrate further includes at least one circle of isolation column structures 012 located in the transition region. The isolation column structure 012 includes a plurality of isolation columns stacked sequentially in a direction away from the base substrate 01 and an isolation layer located on a side of the isolation columns away from the base substrate. The isolation columns surround the opening region 011. A recess is formed on the side of the isolation columns. At least a portion of the isolation columns is made of insulating material. The orthographic projection of the isolation columns on the base substrate is located within the orthographic projection of the isolation layer on the base substrate.
[0049] The display layer covers the transition area and the display area 013 . The display layer includes a light-emitting layer. The light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
[0050] In related art, a single layer of isolation columns surrounding the aperture is provided, and the height of the isolation columns is limited. In this embodiment, the isolation column structure comprises multiple isolation columns stacked sequentially in a direction away from the base substrate. This ensures the height of the isolation column structure, allowing the light-emitting layer to be disconnected at the isolation column structure. The isolation column structure also includes an isolation layer, which, together with the isolation columns, forms an undercut structure, further ensuring that the light-emitting layer is disconnected at the isolation column structure. In addition, at least a portion of the isolation column is made of an insulating material, which is non-conductive, preventing the isolation column from conducting electricity with the light-emitting layer, thereby ensuring that the package at the isolation column structure does not fail, thereby improving the packaging reliability and product yield of the display substrate.
[0051] Among them, one circle of isolation column structure 012 can be set in the transition zone, or two circles or even more circles of isolation column structure 012 can be set. As shown in Figure 1, in a specific example, two circles of isolation column structure 012 are set in the transition zone; as shown in Figure 2, in another specific example, three circles of isolation column structure 012 are set in the transition zone; setting multiple circles of isolation column structure 012 helps to improve the packaging effect of the display substrate.
[0052] In some embodiments, the isolation column comprises:
[0053] The first pattern and the second pattern are sequentially stacked in a direction away from the base substrate, and the outer edge of the second pattern extends out of the side wall of the first pattern to form the recessed portion.
[0054] The first pattern is an inorganic insulating pattern, and the second pattern is a first metal pattern; or the second pattern is an inorganic insulating pattern and the first pattern is a first metal pattern. The inorganic insulating pattern prevents electrical conduction between the isolation pillar and the light-emitting layer, thereby preventing package failure at the isolation pillar structure and improving the package reliability and product yield of the display substrate. Furthermore, the isolation pillars formed by the first metal pattern and the inorganic insulating pattern are of sufficient height to prevent the light-emitting layer from breaking at the isolation pillars.
[0055] In some embodiments, the isolation column structure includes a first isolation column and a second isolation column stacked in sequence in a direction away from the base substrate, wherein the orthographic projection of the first isolation column on the base substrate is located within the orthographic projection of the second isolation column on the base substrate, and each of the first isolation column and the second isolation column includes a first graphic and a second graphic stacked in sequence in a direction away from the base substrate, wherein the outer edge of the second graphic extends beyond the sidewall of the first graphic to form the recessed portion. In this way, the first isolation column and the second isolation column can form an undercut structure, ensuring that the light-emitting layer is broken at the isolation column structure. Of course, this embodiment is not limited to the isolation column structure comprising only two isolation columns. The isolation column structure can also include more stacked isolation columns, which can make the isolation column structure taller and ensure that the light-emitting layer is broken at the isolation column structure.
[0056] Figures 3 to 10 are schematic cross-sectional views of Figure 1 taken along the AA direction. As shown in Figure 3 , the display substrate includes a first buffer layer 02, a first gate insulating layer 03, a first gate metal layer 04, a second gate insulating layer 05, a second gate metal layer 06, an interlayer insulating layer 07, a second buffer layer 08, an active layer (not shown), a first source / drain metal layer (not shown), a second source / drain metal layer 09, an anode layer (not shown), etc., which are sequentially stacked on a base substrate 01. Among them, the base substrate 01 may include a first polyimide substrate, a first barrier layer, a second polyimide substrate, and a second barrier layer stacked in sequence; the first buffer layer 02 may be made of silicon oxide or silicon nitride; the first gate insulating layer 03 may be made of silicon oxide or silicon nitride; the first gate metal layer 04 may be made of Mo; the second gate insulating layer 05 may be made of silicon oxide or silicon nitride; the second gate metal layer 06 may be made of Mo; the interlayer insulating layer 07 may be made of silicon oxide or silicon nitride; the second buffer layer 08 may be made of silicon oxide; and the second source and drain metal layer 09 may be a stacked structure of Ti / Al / Ti.
[0057] In a specific example, the first gate metal layer 04 can be made of Mo; the second gate insulating layer 05 can be made of silicon nitride; the second gate metal layer 06 can be made of Mo; the interlayer insulating layer 07 can be made of silicon nitride; and the second buffer layer 08 can be made of silicon oxide. The first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 can be used to form an isolation pillar structure.
[0058] In a specific example, the inorganic insulating pattern can be provided in the same layer and with the same material as the second gate insulating layer 05 , and the first metal pattern can be provided in the same layer and with the same material as the first gate metal layer 04 .
[0059] In some embodiments, the first gate insulating layer is located between the base substrate and the isolation column; the display substrate includes at least two adjacent isolation columns along a direction parallel to the base substrate, and an isolation trench structure is formed between adjacent isolation columns, and the isolation trench structure exposes the first gate insulating layer.
[0060] For the film layer of the second buffer layer 08 away from the base substrate, while the pattern of the film layer of the second buffer layer 08 in the display area away from the base substrate is formed by a composition process, the film layer of the second buffer layer 08 in the transition area away from the base substrate can be removed by the same composition process. For example, while the pattern of the active layer in the display area is formed, the active layer in the transition area is removed by the same composition process; while the pattern of the first source-drain metal layer in the display area is formed, the first source-drain metal layer in the transition area is removed by the same composition process; while the pattern of the second source-drain metal layer in the display area is formed, the second source-drain metal layer in the transition area is removed by the same composition process; while the pattern of the anode layer in the display area is formed, the anode layer in the transition area is removed by the same composition process; and the structure shown in Figure 4 is formed.
[0061] In this embodiment, the film layer of the second buffer layer 08 in the transition area away from the base substrate can be removed by a special etching process, or, while forming the pattern of the anode layer in the display area, the film layer of the second buffer layer 08 in the transition area away from the base substrate can be removed by the etching solution of the anode layer.
[0062] As shown in FIG4 , after removing the film layer on the side of the second buffer layer 08 away from the substrate in the transition region, a pattern of a photoresist 10 is formed on the second buffer layer 08. Using the pattern of the photoresist 10 as a mask, the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, the interlayer insulating layer 07, and the second buffer layer 08 are dry-etched to form a structure as shown in FIG5 . When performing dry etching, the etching gas, etching pressure, and etching power are first adjusted. The second buffer layer 08 is first etched to expose the interlayer insulating layer 07. When dry etching the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07, the etching gas, etching pressure, and etching power are adjusted so that the etching rate of the first gate metal layer 04 and the second gate metal layer 06 is greater than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, forming a structure as shown in FIG5 . The pattern 25 of the first gate metal layer (i.e., the first metal pattern) and the pattern 26 of the second gate insulating layer (i.e., the inorganic insulating pattern) form a second spacer 22. The pattern 25 of the first gate metal layer is indented relative to the pattern 26 of the second gate insulating layer, forming a recessed portion of the second spacer 22. The pattern 24 of the second gate metal layer (i.e., the first metal pattern) and the pattern 23 of the interlayer insulating layer (i.e., the inorganic insulating pattern) form a first spacer 21. The pattern 24 of the second gate metal layer is indented relative to the pattern 23 of the interlayer insulating layer, forming a recessed portion of the first spacer 21. In this embodiment, the spacer structure is composed of the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07. The height of the spacer structure can be made from 0.6 μm to 10 μm, which can ensure that the light-emitting layer is disconnected at the spacer structure. In addition, by adjusting the etching gas, etching pressure and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 and the etching rate of the second gate insulation layer 05 and the interlayer insulation layer 07 can be adjusted, so that the width of the recessed portion in the radial direction of the isolation column is 0.3μm to 1.5μm, thereby ensuring that the light-emitting layer is disconnected at the isolation column structure.
[0063] In another specific example, when the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched, by adjusting the etching gas, etching pressure, and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 can be made lower than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, forming a structure as shown in Figure 6, wherein the pattern 25 of the first gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulating layer (i.e., the above-mentioned inorganic insulating pattern) constitute a second isolation column 22, and the pattern 26 of the second gate insulating layer is indented relative to the pattern 25 of the first gate metal layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulating layer (i.e., the above-mentioned inorganic insulating pattern) constitute a first isolation column 21, and the pattern 23 of the interlayer insulating layer is indented relative to the pattern 24 of the second gate metal layer to form a recessed portion of the first isolation column 21. In this embodiment, the isolation pillar structure is composed of a first gate metal layer 04, a second gate insulating layer 05, a second gate metal layer 06, and an interlayer insulating layer 07. The height of the isolation pillar structure can be adjusted to 0.6 μm to 10 μm, ensuring that the light-emitting layer is disconnected at the isolation pillar structure. In addition, by adjusting the etching gas, etching pressure, and etching power, the etching rates of the first gate metal layer 04 and the second gate metal layer 06, as well as the etching rates of the second gate insulating layer 05 and the interlayer insulating layer 07, can be adjusted to ensure that the width of the recessed portion in the radial direction of the isolation pillar is 0.3 μm to 1.5 μm, thereby ensuring that the light-emitting layer is disconnected at the isolation pillar structure.
[0064] In this embodiment, to prevent conduction between the light-emitting layer and the isolation layer, the isolation layer includes an insulating pattern. As shown in Figures 5 and 6, the isolation layer can be formed using a second buffer layer 08. Of course, the isolation layer is not limited to being formed using the second buffer layer 08, and other film layers can also be used to form the isolation layer. When dry etching is used to form the patterns of the isolation pillars and the isolation layer, the isolation layer and the isolation pillars need to have different etching rates so that the isolation pillars can be retracted relative to the isolation layer. Therefore, the insulating pattern of the isolation layer and the inorganic insulating pattern of the isolation pillars need to be made of different materials. For example, the inorganic insulating pattern of the isolation pillars can be made of silicon nitride, while the insulating pattern of the isolation layer can be made of silicon oxide.
[0065] As shown in FIG7 , after the isolation column structure is formed in the transition zone, the light-emitting layer 13, the cathode 14, the organic flat layer 15 and the encapsulation layer 16 are formed in sequence. The light-emitting layer 13, the cathode 14 and the organic flat layer 15 are broken in the recessed portion of the isolation column structure, thereby achieving a blocking effect on the common light-emitting material layer, and then cutting off the water and oxygen intrusion channel to prevent poor encapsulation.
[0066] The insulating pattern of the isolation layer is generally made of inorganic insulating materials, which have poor toughness and are easy to break. In order to avoid the insulating pattern of the isolation layer from breaking, a second metal pattern can be set on the side of the insulating pattern away from the base substrate. The second metal pattern has good toughness and can protect the insulating pattern from breaking. When dry etching forms the pattern of the isolation column and the isolation layer, the isolation layer and the isolation column need to have different etching rates, so that the isolation column can be retracted relative to the isolation layer. Therefore, the second metal pattern of the isolation layer and the first metal pattern of the isolation column need to be made of different materials. The insulating pattern can be set in the same layer and material as the second buffer layer, and the second metal pattern can be set in the same layer and material as the second source and drain metal layer. In this embodiment, as shown in Figures 8 and 9, the second source and drain metal layer 09 can be used to form the second metal pattern 28, and the orthographic projection of the second metal pattern 28 on the base substrate 01 coincides with the orthographic projection of the insulating pattern 27 on the base substrate 01.
[0067] As shown in Figure 8, after removing the film layer on the side of the second source-drain metal layer 09 in the transition region away from the substrate, a pattern of photoresist 10 is formed on the second source-drain metal layer 09. Using the pattern of photoresist 10 as a mask, the first gate metal layer 04, the second gate insulation layer 05, the second gate metal layer 06, the interlayer insulation layer 07, the second buffer layer 08, and the second source-drain metal layer 09 are dry-etched to form the structure shown in Figure 9. When dry etching is performed, the etching gas, etching pressure and etching power are first adjusted. The second buffer layer 08 and the second source / drain metal layer 09 are first etched to expose the interlayer insulating layer 07. When dry etching is performed on the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06 and the interlayer insulating layer 07, the etching gas, etching pressure and etching power are adjusted so that the etching rate of the first gate metal layer 04 and the second gate metal layer 06 is greater than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, thereby forming a structure as shown in FIG9 . The pattern 25 of the first gate metal layer (i.e., the aforementioned first metal pattern) and the pattern 26 of the second gate insulation layer (i.e., the aforementioned inorganic insulation pattern) form a second spacer 22. The pattern 25 of the first gate metal layer is recessed relative to the pattern 26 of the second gate insulation layer, forming a recessed portion of the second spacer 22. The pattern 24 of the second gate metal layer (i.e., the aforementioned first metal pattern) and the pattern 23 of the interlayer insulation layer (i.e., the aforementioned inorganic insulation pattern) form a first spacer 21. The pattern 24 of the second gate metal layer is recessed relative to the pattern 23 of the interlayer insulation layer, forming a recessed portion of the first spacer 21. In this embodiment, the spacer structure composed of the first gate metal layer 04, the second gate insulation layer 05, the second gate metal layer 06, and the interlayer insulation layer 07 can achieve a height of 0.6 μm to 10 μm, ensuring that the light-emitting layer is disconnected at the spacer structure. In addition, by adjusting the etching gas, etching pressure and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 and the etching rate of the second gate insulation layer 05 and the interlayer insulation layer 07 can be adjusted, so that the width of the recessed portion in the radial direction of the isolation column reaches 0.3μm to 1.5μm, thereby ensuring that the light-emitting layer is disconnected at the isolation column structure.
[0068] In another specific example, when the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched, by adjusting the etching gas, etching pressure, and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 can be made lower than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, forming a structure as shown in 10, wherein the pattern 25 of the first gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulating layer (i.e., the above-mentioned inorganic insulating pattern) constitute a second isolation column 22, and the pattern 26 of the second gate insulating layer is indented relative to the pattern 25 of the first gate metal layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulating layer (i.e., the above-mentioned inorganic insulating pattern) constitute a first isolation column 21, and the pattern 23 of the interlayer insulating layer is indented relative to the pattern 24 of the second gate metal layer to form a recessed portion of the first isolation column 21. In this embodiment, the isolation pillar structure, which is composed of the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07, can be made to have a height of 0.6 μm to 10 μm, thereby ensuring that the light-emitting layer is disconnected at the isolation pillar structure. In addition, by adjusting the etching gas, etching pressure, and etching power, the etching rates of the first gate metal layer 04 and the second gate metal layer 06, as well as the etching rates of the second gate insulating layer 05 and the interlayer insulating layer 07, can be adjusted, so that the width of the recessed portion in the radial direction of the isolation pillar reaches 0.3 μm to 1.5 μm, thereby ensuring that the light-emitting layer is disconnected at the isolation pillar structure.
[0069] After the isolation column structure is formed, when forming the encapsulation layer, it is necessary to form a rheological organic material on the display substrate. After the rheological organic material is solidified, an organic film layer of the encapsulation layer is formed. The organic film layer needs to be limited to the display area. If the organic film layer is formed in the opening area, water vapor will invade the display area along the organic film layer. Therefore, as shown in Figure 11, an isolation wall 014 is also provided in the transition area. The height of the isolation wall 014 perpendicular to the base substrate is greater than the height of the isolation column structure 012 perpendicular to the base substrate. The isolation wall 014 can prevent the rheological organic material from entering the opening area.
[0070] In some embodiments, the isolation column structure includes:
[0071] At least one circle of first isolation column structures located on a side of the isolation wall away from the opening area;
[0072] At least one circle of second isolation column structures is located on the side of the isolation wall near the opening area. Having isolation column structures on both sides of the isolation wall ensures that the light-emitting layer breaks on the side of the transition area near the opening area and also on the side of the transition area near the display area, thereby ensuring package reliability.
[0073] Figure 12 is a cross-sectional schematic diagram of Figure 11 in the AA direction. As shown in Figure 12, a circle of isolation column structures can be set on the side of the isolation wall away from the opening area, and a circle of isolation column structures can be set on the side of the isolation wall close to the opening area; in some embodiments, as shown in Figure 13, a circle of isolation column structures can also be set on the side of the isolation wall away from the opening area, and two circles of isolation column structures can be set on the side of the isolation wall close to the opening area; in some embodiments, as shown in Figure 14, two circles of isolation column structures can be set on the side of the isolation wall away from the opening area, and two circles of isolation column structures can be set on the side of the isolation wall close to the opening area.
[0074] In this embodiment, the greater the width of the recess in the radial direction of the isolation column, the easier it is for the light-emitting layer to break in the recess of the isolation column; however, if the width of the recess in the radial direction of the isolation column is too large, it will affect the structural strength of the isolation column itself; in order to ensure that the light-emitting layer is easy to break at the bottom cut structure and to ensure the structural strength of the isolation column itself, the width of the recess in the radial direction of the isolation column can be 0.3μm to 1.5μm.
[0075] In this embodiment, compared with using a source-drain metal layer to form an isolation column, a plurality of film layers are used to form an isolation column structure, which can increase the height of the isolation column structure. The height of the isolation column structure perpendicular to the base substrate can reach 0.6μm to 10μm. On the one hand, the light-emitting layer can be easily broken at the isolation column structure. On the other hand, a groove-shaped structure can be formed between adjacent isolation column structures in the transition zone. Since the depth of the groove-shaped structure is relatively large, after the encapsulation layer is formed, the encapsulation layer can better adhere to the side wall of the groove-shaped structure and better combine with the side wall of the groove-shaped structure, thereby further increasing the reliability of the encapsulation.
[0076] An embodiment of the present disclosure further provides a method for manufacturing a display substrate, comprising:
[0077] Providing a base substrate, the base substrate comprising an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area;
[0078] At least one circle of isolation column structures is formed in the transition region, the isolation column structure comprising a plurality of isolation columns stacked sequentially in a direction away from the base substrate and an isolation layer located on a side of the isolation columns away from the base substrate, the isolation columns surrounding the opening region, recessed portions formed on side surfaces of the isolation columns, at least portions of the isolation columns being made of insulating material, and an orthographic projection of the isolation columns on the base substrate being located within an orthographic projection of the isolation layer on the base substrate;
[0079] A display layer is formed in the transition area and the display area. The display layer includes a light-emitting layer. The light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
[0080] In related art, a single layer of isolation columns surrounding the aperture is provided, and the height of the isolation columns is limited. In this embodiment, the isolation column structure comprises multiple isolation columns stacked sequentially in a direction away from the base substrate. This ensures the height of the isolation column structure, allowing the light-emitting layer to be disconnected at the isolation column structure. The isolation column structure also includes an isolation layer, which, together with the isolation columns, forms an undercut structure, further ensuring that the light-emitting layer is disconnected at the isolation column structure. In addition, at least a portion of the isolation column is made of an insulating material, which is non-conductive, preventing the isolation column from conducting electricity with the light-emitting layer, thereby ensuring that the package at the isolation column structure does not fail, thereby improving the packaging reliability and product yield of the display substrate.
[0081] Among them, one circle of isolation column structure 012 can be set in the transition zone, or two circles or even more circles of isolation column structure 012 can be set. As shown in Figure 1, in a specific example, two circles of isolation column structure 012 are set in the transition zone; as shown in Figure 2, in another specific example, three circles of isolation column structure 012 are set in the transition zone; setting multiple circles of isolation column structure 012 helps to improve the packaging effect of the display substrate.
[0082] In some embodiments, the display substrate includes a first film layer and a second film layer sequentially stacked in a direction away from the base substrate, and forming the isolation column includes:
[0083] The first film layer and the second film layer are dry-etched to form a first pattern using the first film layer and a second pattern using the second film layer, wherein the outer edge of the second pattern extends beyond the sidewall of the first pattern to form the recessed portion.
[0084] In this embodiment, the use of two film layers to form the isolation column ensures sufficient height, ensuring that the light-emitting layer is disconnected at the isolation column. One of the first and second film layers can be an inorganic insulating film layer, and the other a metal film layer. In this case, the first pattern is an inorganic insulating pattern, and the second pattern is a first metal pattern; alternatively, the second pattern is an inorganic insulating pattern, and the first pattern is a first metal pattern. The inorganic insulating pattern prevents electrical conduction between the isolation column and the light-emitting layer, thereby preventing package failure at the isolation column structure and improving the packaging reliability and product yield of the display substrate.
[0085] In some embodiments, forming the isolation column structure includes:
[0086] A first spacer and a second spacer are stacked in sequence, with the orthographic projection of the first spacer on the base substrate located within the orthographic projection of the second spacer on the base substrate. This allows the first and second spacers to form an undercut structure, ensuring that the light-emitting layer is disconnected at the spacer structure. Of course, this embodiment is not limited to a spacer structure comprising only two spacers; the spacer structure can also include a plurality of stacked spacers, thereby increasing the height of the spacer structure and ensuring that the light-emitting layer is disconnected at the spacer structure.
[0087] Figures 3 to 10 are schematic cross-sectional views of Figure 1 taken along the AA direction. As shown in Figure 3 , the display substrate includes a first buffer layer 02, a first gate insulating layer 03, a first gate metal layer 04, a second gate insulating layer 05, a second gate metal layer 06, an interlayer insulating layer 07, a second buffer layer 08, an active layer (not shown), a first source / drain metal layer (not shown), a second source / drain metal layer 09, an anode layer (not shown), etc., which are sequentially stacked on a base substrate 01. Among them, the base substrate 01 may include a first polyimide substrate, a first barrier layer, a second polyimide substrate, and a second barrier layer stacked in sequence; the first buffer layer 02 may be made of silicon oxide or silicon nitride; the first gate insulating layer 03 may be made of silicon oxide or silicon nitride; the first gate metal layer 04 may be made of Mo; the second gate insulating layer 05 may be made of silicon oxide or silicon nitride; the second gate metal layer 06 may be made of Mo; the interlayer insulating layer 07 may be made of silicon oxide or silicon nitride; the second buffer layer 08 may be made of silicon oxide; and the second source and drain metal layer 09 may be a stacked structure of Ti / Al / Ti.
[0088] In a specific example, the first gate metal layer 04 can be made of Mo; the second gate insulating layer 05 can be made of silicon nitride; the second gate metal layer 06 can be made of Mo; the interlayer insulating layer 07 can be made of silicon nitride; and the second buffer layer 08 can be made of silicon oxide. The first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 can be used to form an isolation pillar structure.
[0089] Specifically, forming the isolation column structure includes the following steps:
[0090] Step 1: As shown in FIG3 , a first buffer layer 02 , a first gate insulating layer 03 , a first gate metal layer 04 , a second gate insulating layer 05 , a second gate metal layer 06 , an interlayer insulating layer 07 , a second buffer layer 08 , an active layer (not shown), a first source / drain metal layer (not shown), a second source / drain metal layer 09 , and an anode layer (not shown) are sequentially formed on a substrate 01 .
[0091] Among them, the base substrate 01 may include a first polyimide substrate, a first barrier layer, a second polyimide substrate, and a second barrier layer stacked in sequence; the first buffer layer 02 may be made of silicon oxide or silicon nitride; the first gate insulating layer 03 may be made of silicon oxide or silicon nitride; the first gate metal layer 04 may be made of Mo; the second gate insulating layer 05 may be made of silicon nitride; the second gate metal layer 06 may be made of Mo; the interlayer insulating layer 07 may be made of silicon nitride; the second buffer layer 08 may be made of silicon oxide; and the second source and drain metal layer 09 may be a Ti / Al / Ti stacked structure.
[0092] Step 2: As shown in FIG4 , remove the film layer of the second buffer layer 08 in the transition region away from the substrate;
[0093] While forming the pattern of the film layer on the side of the second buffer layer 08 in the display area away from the base substrate through a composition process, the film layer on the side of the second buffer layer 08 in the transition area away from the base substrate can be removed through the same composition process. For example, while forming the pattern of the active layer in the display area, the active layer in the transition area is removed through the same composition process; while forming the pattern of the first source / drain metal layer in the display area, the first source / drain metal layer in the transition area is removed through the same composition process; while forming the pattern of the second source / drain metal layer in the display area, the second source / drain metal layer in the transition area is removed through the same composition process; while forming the pattern of the anode layer in the display area, the anode layer in the transition area is removed through the same composition process; and the structure shown in FIG. 4 is formed.
[0094] Of course, the film layer of the second buffer layer 08 in the transition area away from the substrate can be removed by a special etching process, or, while forming the pattern of the anode layer in the display area, the film layer of the second buffer layer 08 in the transition area away from the substrate can be removed by the etching solution of the anode layer.
[0095] Step 3: As shown in FIG4 , a pattern of photoresist 10 is formed on the second buffer layer 08 ;
[0096] Step 4, as shown in FIG5 , using the pattern of the photoresist 10 as a mask, the first gate metal layer 04 , the second gate insulating layer 05 , the second gate metal layer 06 , the interlayer insulating layer 07 , and the second buffer layer 08 are dry-etched to form an isolation column structure;
[0097] When performing dry etching, the etching gas, etching pressure and etching power are first adjusted. The second buffer layer 08 is first etched to expose the interlayer insulating layer 07. Specifically, the etching gas can be CF4 and O2, wherein the flow rate of CF4 is 710-730sccm (milliliters per minute), specifically 720sccm, and the flow rate of O2 is 470-490sccm, specifically 480sccm; the etching pressure can be 9-11mT, specifically 10mT (millitorr); the etching power can be 17000-19000W (watts), specifically 18000W.
[0098] Then, the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched. When the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched, by adjusting the etching gas, etching pressure, and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 can be greater than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, forming a structure as shown in Figure 5. The pattern 25 of the first gate metal layer is (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the second isolation column 22, and the pattern 25 of the first gate metal layer is indented relative to the pattern 26 of the second gate insulation layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the first isolation column 21, and the pattern 24 of the second gate metal layer is indented relative to the pattern 23 of the interlayer insulation layer to form a recessed portion of the first isolation column 21. Specifically, when dry etching the first gate metal layer 04, the second gate insulation layer 05, the second gate metal layer 06, and the interlayer insulation layer 07, the etching gas can be SF6 and O2, wherein the flow rate of SF6 is 800-1000sccm (milliliters per minute), specifically 900sccm, and the flow rate of O2 is 800-1000sccm, specifically 900sccm; the etching pressure can be 19-21mT, specifically 20mT (milliTorr); the etching power can be 18000-20000W (watts), specifically 19000W.
[0099] Of course, the etching gas, etching pressure and etching power can also be adjusted so that the etching rate of the first gate metal layer 04 and the second gate metal layer 06 is less than the etching rate of the second gate insulation layer 05 and the interlayer insulation layer 07, thereby forming a structure as shown in Figure 6, wherein the pattern 25 of the first gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the second isolation column 22, and the pattern 26 of the second gate insulation layer is indented relative to the pattern 25 of the first gate metal layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the first isolation column 21, and the pattern 23 of the interlayer insulation layer is indented relative to the pattern 24 of the second gate metal layer to form a recessed portion of the first isolation column 21.
[0100] Step 5, as shown in Figure 7, the light-emitting layer 13, the cathode 14, the organic flat layer 15 and the encapsulation layer 16 are formed in sequence. The light-emitting layer 13, the cathode 14 and the organic flat layer 15 are broken in the recessed part of the isolation column structure, thereby achieving a blocking effect on the common light-emitting material layer, and then cutting off the water and oxygen intrusion channel to prevent poor encapsulation.
[0101] In some embodiments, forming the isolation column structure further includes:
[0102] An isolation layer is formed on the side of the isolation pillar away from the base substrate, and the orthographic projection of the isolation pillar on the base substrate is located within the orthographic projection of the isolation layer on the base substrate. In this way, the isolation layer and the isolation pillar form an undercut structure, further ensuring that the light-emitting layer is broken at the isolation pillar structure.
[0103] In this embodiment, to prevent conduction between the light-emitting layer and the isolation layer, the isolation layer includes an insulating pattern. As shown in Figures 5 and 6, the isolation layer can be formed using a second buffer layer 08. Of course, the isolation layer is not limited to being formed using the second buffer layer 08, and other film layers can also be used to form the isolation layer. When dry etching is used to form the patterns of the isolation pillars and the isolation layer, the isolation layer and the isolation pillars need to have different etching rates so that the isolation pillars can be retracted relative to the isolation layer. Therefore, the insulating pattern of the isolation layer and the inorganic insulating pattern of the isolation pillars need to be made of different materials. For example, the inorganic insulating pattern of the isolation pillars can be made of silicon nitride, while the insulating pattern of the isolation layer can be made of silicon oxide.
[0104] The insulating pattern of the isolation layer is generally made of inorganic insulating materials, which have poor toughness and are easy to break. In order to avoid the insulation pattern of the isolation layer from breaking, a second metal pattern can be set on the side of the insulation pattern away from the base substrate. The second metal pattern has good toughness and can protect the insulation pattern from breaking. When dry etching is used to form the pattern of the isolation column and the isolation layer, the isolation layer and the isolation column need to have different etching rates so that the isolation column can be retracted relative to the isolation layer. Therefore, the second metal pattern of the isolation layer and the first metal pattern of the isolation column need to be made of different materials. In this embodiment, as shown in Figures 8 and 9, the second source and drain metal layer 09 can be used to form the second metal pattern 28. The orthographic projection of the second metal pattern 28 on the base substrate 01 coincides with the orthographic projection of the insulation pattern 27 on the base substrate 01.
[0105] Specifically, forming the isolation column structure includes the following steps:
[0106] Step 1: As shown in FIG3 , a first buffer layer 02 , a first gate insulating layer 03 , a first gate metal layer 04 , a second gate insulating layer 05 , a second gate metal layer 06 , an interlayer insulating layer 07 , a second buffer layer 08 , an active layer (not shown), a first source / drain metal layer (not shown), a second source / drain metal layer 09 , and an anode layer (not shown) are sequentially formed on a substrate 01 .
[0107] Among them, the base substrate 01 may include a first polyimide substrate, a first barrier layer, a second polyimide substrate, and a second barrier layer stacked in sequence; the first buffer layer 02 may be made of silicon oxide or silicon nitride; the first gate insulating layer 03 may be made of silicon oxide or silicon nitride; the first gate metal layer 04 may be made of Mo; the second gate insulating layer 05 may be made of silicon nitride; the second gate metal layer 06 may be made of Mo; the interlayer insulating layer 07 may be made of silicon nitride; the second buffer layer 08 may be made of silicon oxide; and the second source and drain metal layer 09 may be a Ti / Al / Ti stacked structure.
[0108] Step 2, as shown in FIG8 , remove the active layer, the first source-drain metal layer, the anode layer and other film layers in the transition region, and retain the first buffer layer 02 , the first gate insulating layer 03 , the first gate metal layer 04 , the second gate insulating layer 05 , the second gate metal layer 06 , the interlayer insulating layer 07 , the second buffer layer 08 , and the second source-drain metal layer 09 in the transition region;
[0109] While forming the pattern of the film layer on the side of the second buffer layer 08 in the display area away from the base substrate through a composition process, the film layer on the side of the second buffer layer 08 in the transition area away from the base substrate can be removed through the same composition process. For example, while forming the pattern of the active layer in the display area, the active layer in the transition area is removed through the same composition process; while forming the pattern of the first source / drain metal layer in the display area, the first source / drain metal layer in the transition area is removed through the same composition process; while forming the pattern of the anode layer in the display area, the anode layer in the transition area is removed through the same composition process; thus, the structure shown in FIG. 8 is formed.
[0110] Step 3: As shown in FIG8 , a pattern of photoresist 10 is formed on the second source / drain metal layer 09 ;
[0111] Step 4, as shown in FIG9 , using the pattern of the photoresist 10 as a mask, the first gate metal layer 04 , the second gate insulating layer 05 , the second gate metal layer 06 , the interlayer insulating layer 07 , the second buffer layer 08 , and the second source / drain metal layer 09 are dry-etched to form an isolation column structure;
[0112] When performing dry etching, the etching gas, etching pressure and etching power are first adjusted. The second source and drain metal layer 09 and the second buffer layer 08 are first etched to expose the interlayer insulating layer 07. Specifically, the etching gas can be CF4 and O2, wherein the flow rate of CF4 is 710-730sccm (milliliters per minute), specifically 720sccm, and the flow rate of O2 is 470-490sccm, specifically 480sccm; the etching pressure can be 9-11mT, specifically 10mT (millitorr); the etching power can be 17000-19000W (watts), specifically 18000W.
[0113] Then, the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched. When the first gate metal layer 04, the second gate insulating layer 05, the second gate metal layer 06, and the interlayer insulating layer 07 are dry-etched, by adjusting the etching gas, etching pressure, and etching power, the etching rate of the first gate metal layer 04 and the second gate metal layer 06 can be greater than the etching rate of the second gate insulating layer 05 and the interlayer insulating layer 07, forming a structure shown in FIG9. The pattern 25 of the first gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the second isolation column 22, and the pattern 25 of the first gate metal layer is indented relative to the pattern 26 of the second gate insulation layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the first isolation column 21, and the pattern 24 of the second gate metal layer is indented relative to the pattern 23 of the interlayer insulation layer to form a recessed portion of the first isolation column 21. Specifically, when dry etching the first gate metal layer 04, the second gate insulation layer 05, the second gate metal layer 06, and the interlayer insulation layer 07, the etching gas can be SF6 and O2, wherein the flow rate of SF6 is 800-1000sccm (milliliters per minute), specifically 900sccm, and the flow rate of O2 is 800-1000sccm, specifically 900sccm; the etching pressure can be 19-21mT, specifically 20mT (milliTorr); the etching power can be 18000-20000W (watts), specifically 19000W.
[0114] Of course, the etching gas, etching pressure and etching power can also be adjusted so that the etching rate of the first gate metal layer 04 and the second gate metal layer 06 is less than the etching rate of the second gate insulation layer 05 and the interlayer insulation layer 07, thereby forming a structure as shown in 10, wherein the pattern 25 of the first gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 26 of the second gate insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the second isolation column 22, and the pattern 26 of the second gate insulation layer is indented relative to the pattern 25 of the first gate metal layer to form a recessed portion of the second isolation column 22; the pattern 24 of the second gate metal layer (i.e., the above-mentioned first metal pattern) and the pattern 23 of the interlayer insulation layer (i.e., the above-mentioned inorganic insulation pattern) constitute the first isolation column 21, and the pattern 23 of the interlayer insulation layer is indented relative to the pattern 24 of the second gate metal layer to form a recessed portion of the first isolation column 21.
[0115] Afterwards, a light-emitting layer 13, a cathode 14, an organic flat layer 15 and an encapsulation layer 16 can be formed in sequence on the structure shown in FIG9 . The light-emitting layer 13, the cathode 14 and the organic flat layer 15 are broken in the recessed portion of the isolation column structure, thereby achieving a blocking effect on the common light-emitting material layer, and then cutting off the water and oxygen intrusion channel to prevent poor encapsulation.
[0116] After forming the spacer structure, when forming the encapsulation layer, it is necessary to form a rheological organic material on the display substrate. After the rheological organic material is cured, an organic film layer of the encapsulation layer is formed. The organic film layer needs to be limited to the display area. If the organic film layer is formed in the opening area, water vapor will invade the display area along the organic film layer. Therefore, the method further includes:
[0117] An isolation wall is formed in the transition area. The height of the isolation wall perpendicular to the substrate is greater than the height of the isolation column structure perpendicular to the substrate. The isolation wall 014 can prevent rheological organic materials from entering the open area.
[0118] Isolation column structures can be provided on both sides of the isolation wall to ensure that the light-emitting layer breaks on the side of the transition area close to the opening area and the light-emitting layer also breaks on the side of the transition area close to the display area, thereby ensuring the reliability of the package.
[0119] Figure 12 is a cross-sectional schematic diagram of Figure 11 in the AA direction. As shown in Figure 12, a circle of isolation column structures can be set on the side of the isolation wall away from the opening area, and a circle of isolation column structures can be set on the side of the isolation wall close to the opening area; in some embodiments, as shown in Figure 13, a circle of isolation column structures can also be set on the side of the isolation wall away from the opening area, and two circles of isolation column structures can be set on the side of the isolation wall close to the opening area; in some embodiments, as shown in Figure 14, two circles of isolation column structures can be set on the side of the isolation wall away from the opening area, and two circles of isolation column structures can be set on the side of the isolation wall close to the opening area.
[0120] In the various method embodiments of the present disclosure, the serial numbers of the steps cannot be used to limit the order of the steps. For ordinary technicians in this field, without paying any creative work, changes to the order of the steps are also within the scope of protection of the present disclosure.
[0121] It is worth noting that the display substrate proposed in the embodiment of the present application is not limited to the specific structure formed by the manufacturing method of the above embodiment of the present application. Under the concept of the present application, those skilled in the art may also use other processing techniques to form the specific structure of the display substrate.
[0122] Another embodiment of the present application provides a display device comprising the aforementioned display substrate. The display device can be any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, or a navigation system. The opening area includes a sensing device, such as a camera, a fingerprint recognition device, an infrared sensor, an identification sensor, a pressure sensor, or other sensing devices applicable to a display device, although this embodiment does not limit these.
[0123] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.
[0124] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.
[0125] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.
[0126] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.
[0127] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.
Claims
1. A display substrate, It is characterized in that include: A substrate, comprising an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area; At least one circle of isolation column structures located in the transition region, the isolation column structure comprising a plurality of isolation columns stacked in sequence in a direction away from the base substrate and an isolation layer located on a side of the isolation column away from the base substrate, the isolation columns surrounding the opening region, a recessed portion formed on a side of the isolation column, at least a portion of the isolation columns being made of insulating material, and an orthographic projection of the isolation columns on the base substrate being located within an orthographic projection of the isolation layer on the base substrate; The display layer covers the transition area and the display area. The display layer includes a light-emitting layer. The light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
2. The display substrate according to claim 1, It is characterized in that The isolation column comprises: The first figure and the second figure are sequentially stacked in a direction away from the base substrate, and the outer edge of the second figure extends out of the side wall of the first figure to form the recessed portion.
3. The display substrate according to claim 1, It is characterized in that Along the direction away from the base substrate, the isolation column structure includes a first isolation column and a second isolation column stacked in sequence, the orthographic projection of the first isolation column on the base substrate is located within the orthographic projection of the second isolation column on the base substrate, and the first isolation column and the second isolation column both include a first figure and a second figure stacked in sequence along the direction away from the base substrate, and the outer edge of the second figure extends out of the side wall of the first figure to form the recessed portion.
4. The display substrate according to claim 2, It is characterized in that The first pattern is an inorganic insulating pattern, and the second pattern is a first metal pattern; or The second pattern is an inorganic insulating pattern, and the first pattern is a first metal pattern.
5. The display substrate according to claim 4, It is characterized in that The display substrate at least comprises a first buffer layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second gate metal layer, an interlayer insulating layer, a second buffer layer and a second source-drain metal layer, which are sequentially stacked on a base substrate. The inorganic insulating pattern and the second gate insulating layer are provided in the same layer and with the same material, and the first metal The pattern is provided in the same layer and with the same material as the first gate metal layer.
6. The display substrate according to claim 5, It is characterized in that The isolation layer includes an insulating pattern and / or a second metal pattern, and the isolation layer and the isolation column are made of different materials.
7. The display substrate according to claim 6, It is characterized in that The insulating pattern is provided in the same layer and made of the same material as the second buffer layer, and the second metal pattern is provided in the same layer and made of the same material as the second source / drain metal layer.
8. The display substrate according to claim 5, It is characterized in that The first gate insulating layer is located between the base substrate and the isolation column; the display substrate includes at least two adjacent isolation columns along a direction parallel to the base substrate, and an isolation groove structure is formed between the adjacent isolation columns, and the isolation groove structure exposes the first gate insulating layer.
9. The display substrate according to claim 5, It is characterized in that The first gate insulating layer and the second buffer layer are made of silicon oxide, the first buffer layer, the second gate insulating layer and the interlayer insulating layer are made of silicon nitride, and the first gate metal layer and the second gate metal layer are made of Mo.
10. The display substrate according to claim 1, It is characterized in that The display substrate further comprises: An isolation wall located in the transition region, wherein the height of the isolation wall perpendicular to the substrate is greater than the height of the isolation column structure perpendicular to the substrate; The isolation column structure comprises: At least one circle of first isolation column structures located on a side of the isolation wall away from the opening area; At least one circle of second isolation column structures is located on one side of the isolation wall close to the opening area.
11. The display substrate according to claim 1, It is characterized in that The height of the isolation column structure vertically to the base substrate is 0.6 μm to 10 μm.
12. The display substrate according to claim 1, It is characterized in that The width of the recessed portion in the radial direction of the isolation column is 0.3 μm to 1.5 μm.
13. A display device, It is characterized in that A display substrate comprising any one of claims 1-12.
14. A method for manufacturing a display substrate, It is characterized in that include: A substrate is provided, wherein the substrate comprises an opening area, a transition area surrounding the opening area, and a and a display area surrounding the transition area; At least one circle of isolation column structure is formed in the transition area, the isolation column structure includes a plurality of isolation columns stacked in sequence in a direction away from the base substrate and an isolation layer located on a side of the isolation column away from the base substrate, the isolation columns surround the opening area, a recess is formed on a side of the isolation column, at least a portion of the isolation columns is made of insulating material, and an orthographic projection of the isolation columns on the base substrate is located within an orthographic projection of the isolation layer on the base substrate; A display layer is formed in the transition area and the display area, wherein the display layer includes a light-emitting layer, and the light-emitting layer is intermittently arranged in the recessed portion of the isolation column.
15. The method for manufacturing a display substrate according to claim 14, It is characterized in that The display substrate comprises a first film layer and a second film layer stacked in sequence in a direction away from the base substrate, and forming the isolation column comprises: The first film layer and the second film layer are dry-etched, the first film layer is used to form a first pattern, the second film layer is used to form a second pattern, and the outer edge of the second pattern extends out of the side wall of the first pattern to form the recessed portion.