Display substrate, preparation method thereof and display device

Abstract

The invention discloses a display substrate, a preparation method thereof and a display device, and relates to the technical field of display. The display substrate comprises a first display area, and the display substrate of the first display area comprises a substrate body which comprises an opening area and a non-opening area; the first transparent conducting layer is located on one side of the substrate, and the orthographic projection of the first transparent conducting layer on the substrate is overlapped with the opening area; the passivation layer covers one side, deviating from the substrate, of the first transparent conductive layer; wherein the first transparent conductive layer comprises a first conductive sub-film layer and a second conductive sub-film layer which are stacked, and the oxygen content of the first conductive sub-film layer is different from that of the second conductive sub-film layer.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate and a preparation method thereof, and a display device. Background Art

[0002] With the advancement of science and technology and the continuous improvement of human living standards, the market's performance requirements for display screens are increasing, especially the demand for high-performance products such as high resolution, high refresh rate, and high contrast, and the demand for picture quality is also getting higher and higher. Summary of the invention

[0003] The present disclosure provides a display substrate, including a first display area, wherein the display substrate of the first display area includes:

[0004] A substrate, comprising an opening area and a non-opening area;

[0005] A first transparent conductive layer is located on one side of the base substrate, and an orthographic projection of the first transparent conductive layer on the base substrate overlaps with the opening area; and

[0006] A passivation layer covering a side of the first transparent conductive layer away from the base substrate;

[0007] The first transparent conductive layer includes: a first conductive sub-film layer and a second conductive sub-film layer stacked together, and the oxygen content of the first conductive sub-film layer is different from the oxygen content of the second conductive sub-film layer.

[0008] In some embodiments, the second conductive sub-film layer is disposed close to the passivation layer, and the oxygen content of the second conductive sub-film layer is greater than the oxygen content of the first conductive sub-film layer.

[0009] In some embodiments, the first conductive sub-film layer and the second conductive sub-film layer both include high-valent ions and low-valent ions of the same metal element, and the content of high-valent ions in the second conductive sub-film layer is greater than the content of high-valent ions in the first conductive sub-film layer.

[0010] In some embodiments, the density of the second conductive sub-film layer is greater than the density of the first conductive sub-film layer.

[0011] In some embodiments, the conductivity of the second conductive sub-film layer is less than the conductivity of the first conductive sub-film layer.

[0012] In some embodiments, the transmittance of the second conductive sub-film layer to visible light is greater than the transmittance of the first conductive sub-film layer to visible light.

[0013] In some embodiments, the passivation layer includes: a first passivation sub-film layer, a second passivation sub-film layer, and a third passivation sub-film layer stacked in sequence, wherein the first passivation sub-film layer is disposed close to the first transparent conductive layer;

[0014] The hydrogen content of the first passivation sub-film layer is less than the hydrogen content of the second passivation sub-film layer and the third passivation sub-film layer.

[0015] In some embodiments, the silicon content of the first passivation sub-film layer is less than the silicon content of the second passivation sub-film layer and the third passivation sub-film layer.

[0016] In some embodiments, the density of the second passivation sub-film layer is greater than the density of the first passivation sub-film layer and the third passivation sub-film layer.

[0017] In some embodiments, the dielectric constant of the second passivation sub-film layer is greater than the dielectric constants of the first passivation sub-film layer and the third passivation sub-film layer.

[0018] In some embodiments, the orthographic projection edge of the second passivation sub-film layer on the base substrate is located at the periphery of the orthographic projection edge of the first passivation sub-film layer on the base substrate; and

[0019] The orthographic projection edge of the second passivation sub-film layer on the base substrate is located at the periphery of the orthographic projection edge of the third passivation sub-film layer on the base substrate.

[0020] In some embodiments, the ratio of the thickness of the first passivation sub-film layer to the total thickness of the passivation layer is greater than or equal to 1% and less than or equal to 10%;

[0021] The ratio of the thickness of the third passivation sub-layer to the total thickness of the passivation layer is greater than or equal to 1% and less than or equal to 10%.

[0022] The present disclosure provides a display device, comprising:

[0023] The display substrate according to any one of the embodiments; and

[0024] The driving component is connected to the display substrate and is used to drive the display substrate to display.

[0025] The present disclosure provides a method for preparing a display substrate, comprising:

[0026] Providing a substrate substrate, the substrate substrate comprising an opening area and a non-opening area;

[0027] A first transparent conductive layer is formed on one side of the base substrate, wherein the orthographic projection of the first transparent conductive layer on the base substrate overlaps with the opening area, wherein the first transparent conductive layer comprises: a first conductive sub-film layer and a second conductive sub-film layer stacked, and the oxygen content of the first conductive sub-film layer is different from the oxygen content of the second conductive sub-film layer;

[0028] A passivation layer is covered on a side of the first transparent conductive layer facing away from the base substrate to obtain the display substrate.

[0029] In some embodiments, the step of forming a first transparent conductive layer on one side of the base substrate includes:

[0030] Under a first atmosphere, forming a first film layer on one side of the substrate;

[0031] forming a second film layer on a side of the first film layer facing away from the substrate under a second atmosphere, wherein the oxygen partial pressure in the second atmosphere is greater than the oxygen partial pressure in the first atmosphere;

[0032] The first film layer and the second film layer are simultaneously patterned by using a first composition process. The first film layer is patterned to obtain the first conductive sub-film layer, and the second film layer is patterned to obtain the second conductive sub-film layer. The oxygen content of the second conductive sub-film layer is greater than that of the first conductive sub-film layer.

[0033] In some embodiments, the step of forming a first transparent conductive layer on one side of the base substrate includes:

[0034] forming a third film layer on one side of the base substrate;

[0035] implanting oxygen ions into the surface of the third film layer facing away from the substrate to obtain a fourth film layer;

[0036] The fourth film layer is patterned by a second patterning process to obtain the first conductive sub-film layer and the second conductive sub-film layer, wherein the first conductive sub-film layer is arranged close to the base substrate, and the oxygen content of the second conductive sub-film layer is greater than that of the first conductive sub-film layer.

[0037] In some embodiments, the step of covering the side of the first transparent conductive layer facing away from the base substrate with a passivation layer includes:

[0038] Under a third atmosphere, forming a sixth film layer on a side of the first transparent conductive layer away from the base substrate;

[0039] Under a fourth atmosphere, forming a seventh film layer on a side of the sixth film layer away from the substrate;

[0040] Under a fifth atmosphere, forming an eighth film layer on a side of the seventh film layer away from the substrate;

[0041] The sixth film layer, the seventh film layer and the eighth film layer are simultaneously patterned by adopting a third patterning process, the sixth film layer is patterned to obtain a first passivation sub-film layer, the seventh film layer is patterned to obtain a second passivation sub-film layer, and the eighth film layer is patterned to obtain a third passivation sub-film layer; wherein the hydrogen partial pressure in the third atmosphere is less than the hydrogen partial pressure in the fourth atmosphere and the fifth atmosphere, and the hydrogen content of the first passivation sub-film layer is less than the hydrogen content of the second passivation sub-film layer and the third passivation sub-film layer.

[0042] The above description is only an overview of the technical solution of the present disclosure. In order to more clearly understand the technical means of the present disclosure, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the following is a brief introduction to the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. It should be noted that the proportions in the drawings are only for illustration and do not represent the actual proportions.

[0044] Figure 1 A schematic diagram of a planar structure of a display substrate provided by the present disclosure is exemplarily shown;

[0045] Figure 2 A schematic cross-sectional structure diagram of a display substrate provided by the present disclosure is exemplarily shown;

[0046] Figure 3 The cross-sectional structure diagram of the first transparent conductive layer and the passivation layer in the display substrate provided by the present disclosure is exemplarily shown;

[0047] Figure 4 An ITO Haze adverse effect diagram is shown exemplarily;

[0048] Figure 5 The formation process of an ITO Haze defect is shown exemplarily;

[0049] Figure 6 The relationship between the transmittance of an ITO film and the oxygen flow rate is shown as an example;

[0050] Figure 7 The relationship between the transmittance of silicon nitride film and the flow rate of monosilane is shown by way of example;

[0051] Figure 8 The comparison of scanning electron microscope sections of two display substrates is shown as an example;

[0052] Fig. 9 The full-band spectral transmittance test comparison of two display substrates is shown by way of example;

[0053] Fig.10a A schematic diagram of a preparation process of a first transparent conductive layer is exemplarily shown;

[0054] Fig.10b Another schematic diagram of the preparation process of the first transparent conductive layer is shown exemplarily;

[0055] Fig.11 A schematic diagram of a preparation process of a passivation layer is shown exemplarily;

[0056] Fig.12 A schematic diagram of a preparation process of a display substrate provided by the present disclosure is exemplarily shown. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0058] The present disclosure provides a display substrate, such as Figure 1 As shown, the display substrate includes a first display area DA, and the first display area DA is used to display images. Figure 2 As shown, the display substrate of the first display area DA includes: a base substrate 11, including an opening area OP and a non-opening area NP; a first transparent conductive layer 12, located on one side of the base substrate 11, and the orthographic projection of the first transparent conductive layer 12 on the base substrate 11 overlaps with the opening area OP; and a passivation layer 13, covering the side of the first transparent conductive layer 12 away from the base substrate 11.

[0059] Among them, Figure 3 As shown, the first transparent conductive layer 12 includes: a first conductive sub-film layer 121 and a second conductive sub-film layer 122 which are stacked, and the oxygen content of the first conductive sub-film layer 121 is different from that of the second conductive sub-film layer 122 .

[0060] The display substrate provided by the present disclosure manufactures the first transparent conductive layer 12 by layers, and differentially sets the oxygen content in the first conductive sub-film layer 121 and the second conductive sub-film layer 122 , so that the transmittance of the first transparent conductive layer 12 can be adjusted, thereby improving the transmittance of the first transparent conductive layer 12 .

[0061] For example, Figure 1 As shown, the first display area DA may include a transparent display area DA1, which can transmit ambient light, and an under-screen camera may be set in the transparent display area DA1. The use of the disclosed technical solution can improve the transmittance of the transparent display area DA1, increase the amount of ambient light collected by the under-screen camera, thereby reducing dependence on later algorithms, and helping to achieve 100% full-screen display.

[0062] For example, Figure 1 As shown, the first display area DA may further include a normal display area DA2 located on at least one side of the transparent display area DA1, that is, the normal display area DA2 and the transparent display area DA1 may be formed synchronously using the same process, thereby simplifying the process flow and facilitating the realization of transparent display of the entire screen.

[0063] In the present disclosure, since the passivation layer 13 has a strong ability to block water vapor, the first transparent conductive layer 12 can be protected by covering the passivation layer 13 on the side of the first transparent conductive layer 12 facing away from the base substrate 11 .

[0064] Exemplarily, the first transparent conductive layer 12 includes metal oxides such as indium tin oxide (ITO).

[0065] Exemplarily, the material of the passivation layer 13 includes silicon nitride, silicon oxide, silicon oxynitride or the like.

[0066] Taking the material of the first transparent conductive layer 12 as ITO as an example, the inventors found that the factors that have a relatively large impact on the transmittance of the first display area DA are mainly the following two: ① ITO Haze; ② ITO film oxygen content. Among them, ITO Haze will reduce the transmittance of the first transparent conductive layer 12. The main reason for the occurrence of ITO Haze in the first transparent conductive layer 12 is that during the film formation process of the passivation layer 13, the H plasma reduces the ITO, causing the metal In to be washed out and form In balls, such as Figure 4 The specific principle is as follows: Figure 5As shown, during the process of forming the passivation layer 13, ITO is exposed to the environment of H2, SiH4 and NH3 plasma; In ions react with H ions and are reduced to In balls; after that, as the In balls become larger and more numerous, the reflective performance of the first transparent conductive layer 12 is significantly increased, and the transmittance is reduced. The reaction equation for the reduction of ITO is as follows:

[0067] 4NH3+3SiH4→Si3N4+12H2

[0068] 3SiH4+2N2→Si3N4+6H2

[0069] In2O3+3H2→2In+3H2O

[0070] In order to improve the transmittance of the first transparent conductive layer 12 , in some embodiments, the second conductive sub-film layer 122 is disposed close to the passivation layer 13 , and the oxygen content of the second conductive sub-film layer 122 is greater than that of the first conductive sub-film layer 121 .

[0071] Since the second conductive sub-film layer 122 is arranged close to the passivation layer 13, by increasing the oxygen content of the second conductive sub-film layer 122, it is possible to resist the reduction of the second conductive sub-film layer 122 by the reducing H plasma during the film formation of the passivation layer 13, thereby avoiding an increase in surface oxygen vacancies of the first transparent conductive layer 12 close to the passivation layer 13, and effectively avoiding the generation of ITO Haze due to the reduction of the ITO film by H plasma, thereby improving the transmittance of the first display area DA.

[0072] In addition, since the oxygen content of the second conductive sub-film layer 122 is relatively high, the oxygen vacancies therein are reduced, so the resistance of the second conductive sub-film layer 122 is relatively high and the RC delay is relatively high. By providing the first conductive sub-film layer 121 with a relatively low oxygen content, the resistance of the first conductive sub-film layer 121 is relatively low, and the resistance and RC delay of the first transparent conductive layer 12 can be reduced, thereby improving the display quality of the display device and reducing power consumption.

[0073] For example, in the film forming process of the first transparent conductive layer 12 , the oxygen partial pressure in the film forming atmosphere can be changed by adjusting the oxygen flow rate, thereby adjusting the oxygen content of the second conductive sub-film layer 122 and the first conductive sub-film layer 121 .

[0074] Reference Figure 6 The relationship between the transmittance of the ITO film and the oxygen flow rate is shown as an example. It can be seen that as the oxygen flow rate increases, the oxygen partial pressure in the film-forming atmosphere increases, and the transmittance of the ITO film first gradually increases and then gradually decreases. The inventors analyze the reasons as follows:

[0075] When the oxygen partial pressure is low, In and Sn do not react fully with oxygen to generate low-valent metal ions such as In. 2+、In 1+ Sn 2+ Etc., and some of them exist in the metallic state, with many crystal defects, which makes the light transmittance of ITO film very low.

[0076] When the oxygen partial pressure increases, In and Sn are fully oxidized to generate high-valent metal ions such as In 3+ Sn 4+ Etc., the crystallinity of the film is improved and the light transmittance of the ITO film is improved.

[0077] As the oxygen partial pressure continues to increase, a large amount of O adheres to the deposition surface during the film formation process, resulting in a large number of O-rich regions in the film, that is, a large number of defect states in the film, the degree of crystallization of the film is reduced, the grain boundary density is increased, and the scattering mechanism of the film is mainly ionized impurities and grain boundary scattering, thereby reducing the transmittance of the ITO film.

[0078] In this embodiment, based on the first conductive sub-film layer 121 , the transmittance of the first display area DA can be improved by reasonably increasing the oxygen content of the second conductive sub-film layer 122 .

[0079] In some embodiments, the first conductive sub-film layer 121 and the second conductive sub-film layer 122 both include high-valent ions and low-valent ions of the same metal element, and the content of high-valent ions in the second conductive sub-film layer 122 is greater than the content of high-valent ions in the first conductive sub-film layer 121.

[0080] For example, the metal element is In, and the high-valent ions include In 3+ , low-valent ions include In 2+ And In 1+ In the second conductive sub-film layer 122 3+ The content of In in the first conductive sub-film layer 121 is greater than 3+ The content.

[0081] For example, the metal element is Sn, and the high-valent ions include Sn 4+ , low-valent ions include Sn 2+ The Sn in the second conductive sub-film layer 122 4+ The content of Sn is greater than that of Sn in the first conductive sub-film layer 121. 4+ The content.

[0082] In some embodiments, the density of the second conductive sub-film layer 122 is greater than the density of the first conductive sub-film layer 121 .

[0083] By providing the first conductive sub-film layer 121 with a lower density, that is, the first conductive sub-film layer 121 is relatively loose, it is possible to prevent residual sand from being generated when the first transparent conductive layer 12 is subsequently etched.

[0084] In some embodiments, the conductivity of the second conductive sub-film layer 122 is less than the conductivity of the first conductive sub-film layer 121 .

[0085] Since the oxygen content of the second conductive sub-film layer 122 is relatively large, the oxygen vacancies therein are reduced, so the resistance of the second conductive sub-film layer 122 is relatively large, and the RC delay is relatively large. By arranging the first conductive sub-film layer 121 with relatively large conductivity on the side of the second conductive sub-film layer 122 away from the passivation layer 13, the total resistance and RC delay of the first transparent conductive layer 12 can be reduced, the display quality of the display device can be improved, and the power consumption can be reduced.

[0086] In some embodiments, the transmittance of the second conductive sub-film layer 122 to visible light is greater than the transmittance of the first conductive sub-film layer 121 to visible light.

[0087] In some embodiments, the ratio of the thickness of the second conductive sub-film layer 122 to the thickness of the first conductive sub-film layer 121 is greater than or equal to 0.5 and less than or equal to 2.

[0088] Exemplarily, the thickness of the second conductive sub-film layer 122 is equal to the thickness of the first conductive sub-film layer 121 . In this case, the ratio of the thickness of the second conductive sub-film layer 122 to the thickness of the first conductive sub-film layer 121 is 1.

[0089] Exemplarily, the thickness of the first conductive sub-film layer 121 accounts for 1 / 3 of the total thickness of the first transparent conductive layer 12, and the thickness of the second conductive sub-film layer 122 accounts for 2 / 3 of the total thickness of the first transparent conductive layer 12. In this case, the ratio of the thickness of the second conductive sub-film layer 122 to the thickness of the first conductive sub-film layer 121 is 2.

[0090] Exemplarily, the thickness of the first conductive sub-film layer 121 accounts for 2 / 3 of the total thickness of the first transparent conductive layer 12, and the thickness of the second conductive sub-film layer 122 accounts for 1 / 3 of the total thickness of the first transparent conductive layer 12. In this case, the ratio of the thickness of the second conductive sub-film layer 122 to the thickness of the first conductive sub-film layer 121 is 0.5.

[0091] For example, the thickness of the first transparent conductive layer 12 may be greater than or equal to and less than or equal to

[0092] For example, the thickness of the first transparent conductive layer 12 is The thickness of the second conductive sub-film layer 122 and the thickness of the first conductive sub-film layer 121 are respectively

[0093] In order to improve the transmittance of the first transparent conductive layer 12, in some embodiments, as Figure 3As shown, the passivation layer 13 includes: a first passivation sub-film layer 131, a second passivation sub-film layer 132 and a third passivation sub-film layer 133 which are sequentially stacked, and the first passivation sub-film layer 131 is disposed close to the first transparent conductive layer 12. The hydrogen content of the first passivation sub-film layer 131 is less than the hydrogen content of the second passivation sub-film layer 132 and the third passivation sub-film layer 133.

[0094] In specific implementation, the hydrogen partial pressure in the film-forming atmosphere can be changed by adjusting the flow rate of hydrogen-containing gas (such as monosilane SiH4), thereby adjusting the hydrogen content of the first passivation sub-film layer 131, the second passivation sub-film layer 132 and the third passivation sub-film layer 133.

[0095] In the present embodiment, the film-forming atmosphere of the first passivation sub-film layer 131 may have a lower hydrogen partial pressure, thereby forming a first passivation sub-film layer 131 with a lower hydrogen content. In addition, since the first passivation sub-film layer 131 is disposed close to the first transparent conductive layer 12, the reduction of the first transparent conductive layer 12 by H plasma during the preparation of the passivation layer 13 can be avoided or alleviated, thereby reducing the precipitation of metal In, avoiding the ITO Haze phenomenon, and improving the transmittance of the first display area DA.

[0096] Reference Figure 7 The relationship between the transmittance of the silicon nitride film and the flow rate of monosilane is shown as an example. It can be seen that the transmittance of the silicon nitride film is positively correlated with the decrease of the flow rate of monosilane.

[0097] In a specific implementation, when preparing the first passivation sub-film layer 131, a hydrogen-containing gas may be introduced at a relatively low flow rate, thereby reducing the concentration of H plasma in the film-forming atmosphere, thereby achieving the effect of reducing the hydrogen content of the first passivation sub-film layer 131. When preparing the second passivation sub-film layer 132 and the third passivation sub-film layer 133, a hydrogen-containing gas may be introduced at a relatively high flow rate, thereby increasing the concentration of H plasma in the film-forming atmosphere, thereby achieving the effect of increasing the hydrogen content of the second passivation sub-film layer 132 and the third passivation sub-film layer 133.

[0098] In some embodiments, the silicon content of the first passivation sub-film layer 131 is less than the silicon content of the second passivation sub-film layer 132 and the third passivation sub-film layer 133. When preparing the first passivation sub-film layer 131, the hydrogen-containing gas is introduced at a relatively low flow rate. When the hydrogen-containing gas is monosilane, the first passivation sub-film layer 131 with a relatively low silicon content can be prepared.

[0099] In some embodiments, the density of the second passivation sub-film layer 132 is greater than the density of the first passivation sub-film layer 131 and the third passivation sub-film layer 133. By providing a second passivation sub-film layer 132 with a greater density, the protective effect of the passivation layer 13 on the first transparent conductive layer 12 can be improved.

[0100] In some embodiments, the dielectric constant of the second passivation sub-film layer 132 is greater than the dielectric constants of the first passivation sub-film layer 131 and the third passivation sub-film layer 133. By providing the second passivation sub-film layer 132 with a larger dielectric constant, the insulation and charge storage capacity of the passivation layer 13 are improved.

[0101] In some embodiments, an orthographic projection edge of the second passivation sub-film layer 132 on the base substrate 11 is located at a periphery of an orthographic projection edge of the first passivation sub-film layer 131 on the base substrate 11 .

[0102] Since the first passivation sub-layer 131 is soft and has a faster etching rate in the dry etching process, the edge of the first passivation sub-layer 131 is laterally retracted toward the inside of the film layer relative to the edge of the second passivation sub-layer 132 .

[0103] In some embodiments, an orthographic projection edge of the second passivation sub-film layer 132 on the base substrate 11 is located at a periphery of an orthographic projection edge of the third passivation sub-film layer 133 on the base substrate 11 .

[0104] Since the third passivation sub-film layer 133 is soft and has a faster etching rate in the dry etching process, the edge of the third passivation sub-film layer 133 is laterally retracted toward the inside of the film layer relative to the edge of the second passivation sub-film layer 132 .

[0105] In some embodiments, a ratio of the thickness of the first passivation sub-layer 131 to the total thickness of the passivation layer 13 is greater than or equal to 1% and less than or equal to 10%.

[0106] In some embodiments, a ratio of the thickness of the third passivation sub-layer 133 to the total thickness of the passivation layer 13 is greater than or equal to 1% and less than or equal to 10%.

[0107] In this way, by providing the first passivation sub-film layer 131 and the third passivation sub-film layer 133 with relatively low thickness ratios, the influence of the first passivation sub-film layer 131 and the third passivation sub-film layer 133 on the insulation and protection functions of the passivation layer 13 can be reduced.

[0108] For example, the first passivation sub-film layer 131 is The second passivation sub-film layer 132 is The third passivation sub-film layer 133 is The total thickness of the passivation layer 13 is The thickness of the first passivation sub-film layer 131 accounts for approximately 1.1%, and the thickness of the third passivation sub-film layer 133 accounts for approximately 2.2%.

[0109] For example, Figure 2 As shown, the display substrate further includes: a second transparent conductive layer 18 disposed on a side of the passivation layer 13 away from the base substrate 11 .

[0110] Exemplarily, the first transparent conductive layer 12 includes a plurality of first electrodes P1, and the second transparent conductive layer 18 includes a second electrode P2. In the orthographic projection of the base substrate 11, the first electrodes P1 overlapping with different opening areas OP are separated from each other, and the second electrodes P2 overlapping with different opening areas OP can be interconnected to form an integrated structure, and the second electrodes P2 are equivalent to common electrodes.

[0111] Exemplarily, the second electrode P2 may be a comb-shaped electrode (eg Figure 2 As shown), it can also be a planar electrode, which is not limited in the present disclosure.

[0112] For example, Figure 2 As shown, the display substrate also includes: a gate 14 arranged between the base substrate 11 and the first transparent conductive layer 12, a gate insulating layer 15 (such as silicon nitride material) covering the gate 14, and an active layer 16. The gate 14 is arranged close to the base substrate 11, and the first transparent conductive layer 12 and the active layer 16 are both arranged on the side of the gate insulating layer 15 away from the base substrate 11.

[0113] For example, Figure 2 As shown, the display substrate further includes: a source electrode 17S and a drain electrode 17D disposed between the first transparent conductive layer 12 and the passivation layer 13, the source electrode 17S and the drain electrode 17D are both overlapped with the active layer 16, and the drain electrode 17D is electrically connected to the first electrode P1 located in the first transparent conductive layer 12. The passivation layer 13 covers the first transparent conductive layer 12, the source electrode 17S, the drain electrode 17D and the active layer 16.

[0114] The inventors have disclosed a display substrate (such as Figure 8 ) and a display substrate in the related art (such as Figure 8 The right figure in the figure was compared by scanning electron microscope sections. Among them, the display substrate in the related art did not adopt the scheme of layered ITO and layered silicon nitride. By comparison, it can be seen that in the related art, the upper surface of the ITO film layer is subjected to the effect of H plasma reduction during silicon nitride film formation, and the reaction generates In metal balls to aggregate, resulting in obvious ITO Haze phenomenon. However, the display substrate provided by the present disclosure has a relatively smooth interface between the first transparent conductive layer 12 and the passivation layer 13, without the phenomenon of metal In ball precipitation, and the Haze phenomenon is significantly improved.

[0115] The inventors also conducted full-band spectral transmittance tests and comparisons on the display substrate provided by the present disclosure and the display substrate in the related art. Fig. 9The upper figure shows the transmittance mean comparison result, and the lower figure shows the transmittance spectrum comparison result. According to the comparison results, it can be seen that the transmittance of the display substrate provided by the present disclosure in the first display area DA is increased by 4.69%.

[0116] In order to further improve the transmittance of the first display area DA, the pixel arrangement of the first display area DA can also be optimized to reduce the pixel area. For example, the transparency can be improved by rearranging the pixels and optimizing the substrate material, and the thin-film transistor circuit under the pixel that mainly blocks the light can be moved out of the first display area DA. At the same time, in order to increase the transmittance, the pixel gap can be enlarged and the single sub-pixel can be reduced. In order to ensure the display effect of the screen after the sub-pixel is reduced and reduce the diffraction phenomenon when the light passes through the screen, the pixel shape of the first display area DA can be modified to a circle.

[0117] In addition, after reducing the pixel area and removing the pixel driving circuit, the leads between the pixels can be changed to transparent wires to further increase the transmittance and reduce diffraction, and the routing path can be changed to a wavy shape, which can further improve the transmittance of the first display area DA.

[0118] By adjusting the display pixel volume, the fine display pixel density of the first display area DA 400PPI can be achieved, and the first display area DA and the normal display area DA2 are almost integrated. The full-screen chromaticity difference and brightness difference can be accurately controlled within 2%, which can better retain texture details and color information and solve the problem of consistent display of the two screens.

[0119] In order to further make up for the shortcoming of insufficient light input, machine learning can also be used to control the diffraction problem of the light source, and algorithms such as HDR and AWB can be used to improve image quality.

[0120] The present disclosure provides a display device, comprising: a display substrate as provided in any embodiment; and a driving component connected to the display substrate and used to drive the display substrate to display.

[0121] Those skilled in the art can understand that the display device provided by the present disclosure has the advantages of the above-mentioned display substrate.

[0122] The display device provided by the present disclosure can be: a display module, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a car display device, a smart watch, a fitness wristband, a personal digital assistant, or any other product or component with a display function.

[0123] In some embodiments, the display device provided by the present disclosure may further include: a camera, the orthographic projection of the camera on the display substrate is located within the first display area DA, thereby achieving full-screen display.

[0124] In some embodiments, the display substrate provided by the present disclosure is an array substrate, and the display device may further include: a cell substrate disposed opposite to the display substrate, and a liquid crystal layer filled between the display substrate and the cell substrate.

[0125] For example, Figure 2 As shown, the second electrode P2 is a comb-shaped electrode.

[0126] In a specific implementation, different voltages may be provided to the first electrode P1 and the second electrode P2, thereby forming a horizontal electric field for driving the liquid crystal to deflect.

[0127] In this embodiment, the display device may further include: a backlight module, which is arranged on a side of the display substrate away from the liquid crystal layer and is used to provide backlight.

[0128] In some other embodiments, the display substrate further includes: a light emitting device, which is disposed on a side of the passivation layer 13 away from the base substrate 11 , and the first electrode P1 and the second electrode P2 are an anode and a cathode of the light emitting device.

[0129] Exemplarily, the second electrode P2 is a planar electrode.

[0130] Exemplarily, the light-emitting device may be an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), a sub-millimeter light-emitting diode (Mini LED), or a micro light-emitting diode (Micro LED), etc.

[0131] The present invention provides a display substrate (such as Figure 2 and Figure 3 The preparation method of the invention comprises:

[0132] Step S01: providing a base substrate 11, wherein the base substrate 11 includes an opening region OP and a non-opening region NP.

[0133] Step S02: A first transparent conductive layer 12 is formed on one side of the base substrate 11, and the orthographic projection of the first transparent conductive layer 12 on the base substrate 11 overlaps with the opening area OP, wherein the first transparent conductive layer 12 includes: a first conductive sub-film layer 121 and a second conductive sub-film layer 122 that are stacked, and the oxygen content of the first conductive sub-film layer 121 is different from the oxygen content of the second conductive sub-film layer 122.

[0134] Step S03: Covering the side of the first transparent conductive layer 12 away from the base substrate 11 with a passivation layer 13 to obtain a display substrate.

[0135] The display substrate provided in any of the above-mentioned embodiments can be prepared by using the preparation method provided in the present disclosure.

[0136] In some embodiments, Fig.10a As shown, step S02 may specifically include:

[0137] Step S11: Under the first atmosphere, a first film layer 121A is formed on one side of the base substrate 11, such as Fig.10a As shown in Figure a.

[0138] Step S12: Under the second atmosphere, a second film layer 122A is formed on the side of the first film layer 121A away from the base substrate 11, such as Fig.10a As shown in Figure b in the figure, the oxygen partial pressure in the second atmosphere is greater than the oxygen partial pressure in the first atmosphere.

[0139] Step S13: Using the first patterning process, the first film layer 121A and the second film layer 122A are simultaneously patterned, the first film layer 121A is patterned to obtain the first conductive sub-film layer 121, and the second film layer 122A is patterned to obtain the second conductive sub-film layer 122, the oxygen content of the second conductive sub-film layer 122 is greater than the oxygen content of the first conductive sub-film layer 121, such as Fig.10a As shown in Figure c.

[0140] For example, the oxygen partial pressure in the film-forming atmosphere may be changed by adjusting the oxygen flow rate, so that the oxygen partial pressure in the second atmosphere is greater than the oxygen partial pressure in the first atmosphere.

[0141] For example, when the second film layer 122A is formed, the oxygen flow rate may be, for example, 10 sccm; when the first film layer 121A is prepared, the oxygen flow rate may be a smaller value or 0 sccm.

[0142] For example, a magnetron sputtering device can be used to first form a first film layer 121A and a second film layer 122A on one side of the substrate 11 in steps. The process parameters are first set as follows: power 13 / 11KW, pressure 0.67Pa, Ar flow rate 1000sccm, H2O flow rate 2sccm, deposition growth The first film layer 121A is then switched to the following process parameters: power 13 / 11KW, pressure 0.67Pa, Ar flow rate 1000sccm, O2 flow rate 10sccm, and the first film layer 121A is deposited and grown on the side away from the substrate 11. The second film layer 122A.

[0143] In this embodiment, during the preparation of the first film layer 121A, the oxygen flow rate is 0, thereby obtaining the first film layer 121A with a low oxygen content, and then obtaining the first conductive sub-film layer 121 with a low oxygen content. By introducing H2O during the film formation of the first film layer 121A, the crystallization of ITO in the first film layer 121A can be weakened, avoiding the occurrence of residual sand defects in the subsequent etching process. During the preparation of the second film layer 122A, by increasing the oxygen flow rate, a second atmosphere with a high oxygen partial pressure is obtained, thereby obtaining the second film layer 122A with a high oxygen content, and then obtaining the second conductive sub-film layer 122 with a high oxygen partial pressure.

[0144] Exemplarily, the first patterning process may include exposure, development, and etching, and the first film layer 121A and the second film layer 122A are patterned by one patterning process to form the first conductive sub-film layer 121 and the second conductive sub-film layer 122 .

[0145] In some embodiments, Fig.10b As shown, step S02 may specifically include:

[0146] Step S21: forming a third film layer 123A on one side of the base substrate 11, such as Fig.10b As shown in Figure a.

[0147] Step S22: implanting oxygen ions into the surface of the third film layer 123A facing away from the substrate 11 to obtain a fourth film layer 124A. Fig.10b As shown in Figure b.

[0148] Step S23: Using a second patterning process, patterning the fourth film layer 124A to obtain a first conductive sub-film layer 121 and a second conductive sub-film layer 122, wherein the first conductive sub-film layer 121 is disposed close to the base substrate 11, and the oxygen content of the second conductive sub-film layer 122 is greater than the oxygen content of the first conductive sub-film layer 121, such as Fig.10b As shown in Figure c.

[0149] For example, an electric field can be applied to make oxygen ions move toward the third film layer 123A, and oxygen ions can be implanted into the third film layer 123A to obtain a fourth film layer 124A with a higher surface oxygen content. After a patterning process, a second conductive sub-film layer 122 with a higher oxygen content and a first conductive sub-film layer 121 with a higher oxygen content are obtained.

[0150] Exemplarily, the second patterning process may include exposure, development, and etching, and the fourth film layer 124A is patterned by one patterning process to form the first conductive sub-film layer 121 and the second conductive sub-film layer 122 .

[0151] In some embodiments, Fig.11As shown, step S03 may specifically include:

[0152] Step S31: Under the third atmosphere, a sixth film layer 131A is formed on the side of the first transparent conductive layer 12 away from the base substrate 11, such as Fig.11 As shown in Figure a.

[0153] Step S32: Under the fourth atmosphere, a seventh film layer 132A is formed on the side of the sixth film layer 131A facing away from the base substrate 11, such as Fig.11 As shown in Figure b.

[0154] Step S33: Under the fifth atmosphere, an eighth film layer 133A is formed on the side of the seventh film layer 132A facing away from the base substrate 11, such as Fig.11 As shown in Figure c.

[0155] Step S34: using the third patterning process, synchronously patterning the sixth film layer 131A, the seventh film layer 132A and the eighth film layer 133A, patterning the sixth film layer 131A to obtain the first passivation sub-film layer 131, patterning the seventh film layer 132A to obtain the second passivation sub-film layer 132, and patterning the eighth film layer 133A to obtain the third passivation sub-film layer 133; wherein the hydrogen partial pressure in the third atmosphere is less than the hydrogen partial pressure in the fourth atmosphere and the fifth atmosphere, and the hydrogen content of the first passivation sub-film layer 131 is less than the hydrogen content of the second passivation sub-film layer 132 and the third passivation sub-film layer 133, as shown in FIG. Fig.11 As shown in Figure d.

[0156] For example, a plasma enhanced chemical vapor deposition (PECVD) device may be used to deposit and grow the sixth film layer 131A, the seventh film layer 132A, and the eighth film layer 133A step by step.

[0157] The process parameters of the sixth film layer 131A are: power 11000W, pressure 900mT, SiH4 flow 600sccm, NH3 flow 8160sccm, N2 flow 22300sccm, temperature 280 / 290°C, and the thickness of the deposited film.

[0158] The process parameters of the seventh film layer 132A are: power 13000W, pressure 1500mT, SiH4 flow rate 3000sccm, NH3 flow rate 8160sccm, N2 flow rate 22300sccm, temperature 280 / 290°C, and the thickness of the deposited film layer.

[0159] The process parameters of the eighth film layer 133A are: power 11700W, pressure 2000mT, SiH4 flow rate 3000sccm, NH3 flow rate 8160sccm, N2 flow rate 22300sccm, temperature 280 / 290°C, and the thickness of the deposited film layer.

[0160] In the process of forming the sixth film layer 131A, the flow rate of the hydrogen-containing gas SiH4 is reduced to reduce the hydrogen partial pressure in the third atmosphere, thereby forming the sixth film layer 131A with a low hydrogen content, and then forming the first passivation sub-film layer 131 with a low hydrogen content. At the same time, since the hydrogen partial pressure in the third atmosphere is low, it is possible to avoid H plasma reducing the metal In in the second conductive sub-film layer 122 immediately below during the film formation process, thereby improving the transmittance of the display substrate.

[0161] During the formation of the seventh film layer 132A, the hydrogen partial pressure in the fourth atmosphere is increased by increasing the flow rate of the hydrogen-containing gas SiH 4 , thereby forming the seventh film layer 132A with a higher hydrogen content, and further forming the second passivation sub-film layer 132 with a higher hydrogen content.

[0162] In the process of forming the eighth film layer 133A, the flow rate of the hydrogen-containing gas SiH4 is increased to increase the hydrogen partial pressure in the fifth atmosphere, thereby forming the eighth film layer 133A with a high hydrogen content, and then forming the third passivation sub-film layer 133 with a high hydrogen content. In addition, in the process of forming the eighth film layer 133A, the reaction rate is increased by increasing the pressure value, which is conducive to forming a relatively loose and easily etched eighth film layer 133A.

[0163] Exemplarily, the third patterning process may include exposure, development and etching, and the sixth film layer 131A, the seventh film layer 132A and the eighth film layer 133A are patterned by one patterning process to form the first passivation sub-film layer 131, the second passivation sub-film layer 132 and the third passivation sub-film layer 133.

[0164] In specific implementation, Fig.12 As shown, the preparation method may include the following steps:

[0165] Step 1: A gate electrode 14, a gate insulating layer 15 and an active layer 16 are sequentially formed on one side of a base substrate 11 to obtain a display substrate such as Fig.12 As shown in Figure a.

[0166] Step 2: Form a first transparent conductive layer 12 on the side of the active layer 16 away from the base substrate 11, and obtain a display substrate such as Fig.12 As shown in Figure b.

[0167] Step 3: Using a series of patterning processes such as magnetron sputtering film formation, exposure, development and etching, a source electrode 17S and a drain electrode 17D are simultaneously formed on the side of the first transparent conductive layer 12 and the active layer 16 away from the base substrate 11, and the obtained display substrate is as shown in FIG. Fig.12 As shown in Figure c.

[0168] Step 4: Form a passivation layer 13 on the first transparent conductive layer 12, the source electrode 17S, the drain electrode 17D and the active layer 16 on the side away from the base substrate 11, and obtain a display substrate such as Fig.12 As shown in Figure d.

[0169] Step 5: A series of patterning processes such as magnetron sputtering, exposure, development and etching are used to form a second transparent conductive layer 18 on the side of the passivation layer 13 away from the base substrate 11. The obtained display substrate is as shown in FIG. Fig.12 As shown in Figure e.

[0170] In the present disclosure, “plurality” means two or more, and “at least one” means one or more, unless otherwise clearly and specifically defined.

[0171] In the present disclosure, the orientation or positional relationship indicated by the terms "upper" and "lower" are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0172] As used herein, the terms "comprises," "includes," or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, product, or device. In the absence of further limitations, an element defined by the phrase "includes a ..." does not exclude the presence of additional identical elements in the process, method, commodity, or device that includes the element.

[0173] References herein to "one embodiment," "some embodiments," "exemplary embodiments," "one or more embodiments," "example," "an example," "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0174] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0175] When describing some embodiments, the expressions "coupled" and "connected" may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. As another example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. However, the term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0176] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0177] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0178] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [a stated condition or event] is detected" are optionally interpreted to mean "upon determining that" or "in response to determining that" or "upon detecting [a stated condition or event]" or "in response to detecting [a stated condition or event]," depending on the context.

[0179] The use of "for" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0180] The use of "based on" or "according to" herein is meant to be open and inclusive. A process, step, calculation or other action based on one or more of the conditions or values ​​may, in practice, be based on other conditions or exceed the values ​​described. A process, step, calculation or other action based on one or more of the conditions or values ​​may, in practice, be based on other conditions or exceed the values ​​described.

[0181] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0182] As used herein, "parallel", "perpendicular", "equal", and "flush" include the situations described and situations similar to the situations described, the range of which is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range for approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range for approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range for approximate equality may be, for example, that the difference between the two being equal is less than or equal to 5% of either one. "Flush" includes absolute flushness and approximate flushness, wherein the acceptable deviation range for approximate flushness may be, for example, that the distance between the two being flush is less than or equal to 5% of the size of either one.

[0183] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0184] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions is exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of the regions of the device, and are not intended to limit the scope of the exemplary embodiments. Unless otherwise specified, the thickness of a film layer refers to the size of the film layer in the direction of its normal.

[0185] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A display substrate, comprising a first display area, wherein the display substrate of the first display area comprises: A substrate, comprising an opening area and a non-opening area; A first transparent conductive layer is located on one side of the base substrate, and an orthographic projection of the first transparent conductive layer on the base substrate overlaps with the opening area; as well as A passivation layer covering a side of the first transparent conductive layer away from the base substrate; The first transparent conductive layer includes: a first conductive sub-film layer and a second conductive sub-film layer stacked together, and the oxygen content of the first conductive sub-film layer is different from the oxygen content of the second conductive sub-film layer.

2. The display substrate according to claim 1, wherein: The second conductive sub-film layer is disposed close to the passivation layer, and the oxygen content of the second conductive sub-film layer is greater than the oxygen content of the first conductive sub-film layer.

3. The display substrate according to claim 2, wherein: The first conductive sub-film layer and the second conductive sub-film layer both include high-valent ions and low-valent ions of the same metal element, and the content of high-valent ions in the second conductive sub-film layer is greater than that in the first conductive sub-film layer.

4. The display substrate according to claim 2, wherein: The density of the second conductive sub-film layer is greater than the density of the first conductive sub-film layer.

5. The display substrate according to claim 2, wherein: The conductivity of the second conductive sub-film layer is lower than the conductivity of the first conductive sub-film layer.

6. The display substrate according to claim 2, wherein: The transmittance of the second conductive sub-film layer to visible light is greater than the transmittance of the first conductive sub-film layer to visible light.

7. The display substrate according to any one of claims 1 to 6, wherein: The passivation layer comprises: a first passivation sub-film layer, a second passivation sub-film layer and a third passivation sub-film layer which are stacked in sequence, wherein the first passivation sub-film layer is arranged close to the first transparent conductive layer; The hydrogen content of the first passivation sub-film layer is less than the hydrogen content of the second passivation sub-film layer and the third passivation sub-film layer.

8. The display substrate according to claim 7, wherein: The silicon content of the first passivation sub-film layer is less than the silicon content of the second passivation sub-film layer and the third passivation sub-film layer.

9. The display substrate according to claim 7, wherein: The density of the second passivation sub-film layer is greater than the density of the first passivation sub-film layer and the third passivation sub-film layer.

10. The display substrate according to claim 7, wherein: The dielectric constant of the second passivation sub-film layer is greater than the dielectric constants of the first passivation sub-film layer and the third passivation sub-film layer.

11. The display substrate according to claim 7, wherein: The orthographic projection edge of the second passivation sub-film layer on the base substrate is located at the periphery of the orthographic projection edge of the first passivation sub-film layer on the base substrate; and The orthographic projection edge of the second passivation sub-film layer on the base substrate is located at the periphery of the orthographic projection edge of the third passivation sub-film layer on the base substrate.

12. The display substrate according to claim 7, wherein: The ratio of the thickness of the first passivation sub-film layer to the total thickness of the passivation layer is greater than or equal to 1% and less than or equal to 10%; The ratio of the thickness of the third passivation sub-layer to the total thickness of the passivation layer is greater than or equal to 1% and less than or equal to 10%.

13. A display device, comprising: The display substrate according to any one of claims 1 to 12; as well as The driving component is connected to the display substrate and is used to drive the display substrate to display.

14. A method for preparing a display substrate, comprising: Providing a substrate substrate, the substrate substrate comprising an opening area and a non-opening area; A first transparent conductive layer is formed on one side of the base substrate, wherein the orthographic projection of the first transparent conductive layer on the base substrate overlaps with the opening area, wherein the first transparent conductive layer comprises: a first conductive sub-film layer and a second conductive sub-film layer stacked, and the oxygen content of the first conductive sub-film layer is different from the oxygen content of the second conductive sub-film layer; A passivation layer is covered on a side of the first transparent conductive layer facing away from the base substrate to obtain the display substrate.

15. The preparation method according to claim 14, wherein: The step of forming a first transparent conductive layer on one side of the base substrate comprises: Under a first atmosphere, forming a first film layer on one side of the substrate; forming a second film layer on a side of the first film layer facing away from the substrate under a second atmosphere, wherein the oxygen partial pressure in the second atmosphere is greater than the oxygen partial pressure in the first atmosphere; The first film layer and the second film layer are simultaneously patterned by using a first composition process. The first film layer is patterned to obtain the first conductive sub-film layer, and the second film layer is patterned to obtain the second conductive sub-film layer. The oxygen content of the second conductive sub-film layer is greater than that of the first conductive sub-film layer.

16. The preparation method according to claim 14, wherein: The step of forming a first transparent conductive layer on one side of the base substrate comprises: forming a third film layer on one side of the base substrate; implanting oxygen ions into the surface of the third film layer facing away from the substrate to obtain a fourth film layer; The fourth film layer is patterned by a second patterning process to obtain the first conductive sub-film layer and the second conductive sub-film layer, wherein the first conductive sub-film layer is arranged close to the base substrate, and the oxygen content of the second conductive sub-film layer is greater than that of the first conductive sub-film layer.

17. The preparation method according to any one of claims 14 to 16, wherein: The step of covering the side of the first transparent conductive layer away from the base substrate with a passivation layer comprises: Under a third atmosphere, forming a sixth film layer on a side of the first transparent conductive layer away from the base substrate; Under a fourth atmosphere, forming a seventh film layer on a side of the sixth film layer away from the substrate; Under a fifth atmosphere, forming an eighth film layer on a side of the seventh film layer away from the substrate; The sixth film layer, the seventh film layer and the eighth film layer are simultaneously patterned by adopting a third patterning process, the sixth film layer is patterned to obtain a first passivation sub-film layer, the seventh film layer is patterned to obtain a second passivation sub-film layer, and the eighth film layer is patterned to obtain a third passivation sub-film layer; wherein the hydrogen partial pressure in the third atmosphere is less than the hydrogen partial pressure in the fourth atmosphere and the fifth atmosphere, and the hydrogen content of the first passivation sub-film layer is less than the hydrogen content of the second passivation sub-film layer and the third passivation sub-film layer.

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