Perovskite solar cell, preparation method thereof and photovoltaic module

Abstract

The invention discloses a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a substrate; the dipole layer is arranged on one side of the substrate, and the dipole layer comprises a valeric acid derivative and a hexafluoropropane derivative; the perovskite layer is arranged on one side, far away from the substrate, of the dipole layer; and the electrode layer is arranged on one side, far away from the dipole layer, of the perovskite layer. Therefore, the charge collection rate of the insulating dipole layer can be improved, the efficiency of transmitting photogenerated charges from the perovskite layer to the electrode layer is improved, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular, to perovskite solar cells and preparation methods thereof, as well as photovoltaic modules. Background Art

[0002] The rapid development of perovskite solar cells (PSCs) marks a revolution in the field of third-generation photovoltaic research. High-efficiency organic-inorganic hybrid perovskite solar cells have become one of the most promising light-absorbing materials due to their excellent optoelectronic properties such as long carrier diffusion length and high absorption coefficient. With continuous technological innovation and device optimization, the certified photoelectric conversion efficiency (PCE) of perovskites has increased from 3.8% to 26.1%, making perovskite solar cells the most advantageous alternative to crystalline silicon solar cells.

[0003] In actual large-area applications, in order to output a higher voltage, individual perovskite solar cells need to be connected in series. Like conventional solar cells, when PSCs are used in series in large-area modules and panels, special attention needs to be paid to the problem of reverse bias on sub-cells. This is mainly because in actual environments, external factors such as trees, fallen leaves, and snow will block part of the module units, resulting in a shading effect. For the PSC in the module, the shaded sub-cell may be subject to reverse bias provided by other well-lit sub-cells. This is because the photocurrent generated by the well-lit sub-cell will flow into the shaded sub-cell as a reverse current, resulting in its power consumption and thermal degradation. This will not only deteriorate the power output of the entire panel, but may also produce local thermal breakdown, causing irreversible damage.

[0004] Therefore, current perovskite solar cells need further improvement. Summary of the invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art to at least a certain extent.

[0006] In the first aspect of the present application, the present application proposes a perovskite solar cell. According to an embodiment of the present application, the perovskite solar cell includes: a substrate; a dipole layer, the dipole layer is arranged on one side of the substrate, the dipole layer includes a valeric acid derivative and a hexafluoropropane derivative; a perovskite layer, the perovskite layer is arranged on the side of the dipole layer away from the substrate; an electrode layer, the electrode layer is arranged on the side of the perovskite layer away from the dipole layer. Therefore, the charge collection rate of the insulating dipole layer can be improved, the efficiency of the photogenerated charge being transferred from the perovskite layer to the electrode layer can be improved, and the photoelectric conversion efficiency of the perovskite solar cell can be improved.

[0007] According to an embodiment of the present application, the perovskite solar cell may further include at least one of the following additional technical features:

[0008] According to an embodiment of the present application, the mass ratio of the valeric acid derivative to the hexafluoropropane derivative in the dipole layer is (5-10):(2-5). Thus, by making the mass ratio of the valeric acid derivative to the hexafluoropropane derivative within the above range, the charge collection and transmission efficiency of the dipole layer can be improved while improving the insulation performance of the dipole layer, thereby improving the photoelectric conversion efficiency of the battery.

[0009] According to an embodiment of the present application, based on the total mass of the dipole layer, the mass proportion of the valeric acid derivative is 0.5%-1.5%, and the mass proportion of the hexafluoropropane derivative is 0.1%-1%. Thus, by making the mass proportion of the valeric acid derivative and the mass proportion of the hexafluoropropane derivative within the above ranges, the charge collection and transmission efficiency of the dipole layer can be improved, and the photoelectric conversion efficiency of the battery can be improved.

[0010] According to an embodiment of the present application, the thickness of the dipole layer is 4 nm to 6 nm. Thus, the content of valeric acid derivatives and hexafluoropropane derivatives can be increased, the charge collection rate of the dipole layer can be further increased, and the photoelectric conversion efficiency of the perovskite solar cell can be improved.

[0011] According to an embodiment of the present application, the valeric acid derivative includes at least one of 3-aminovaleric acid, 5-aminovaleric acid, 5-(dimethylamino)valeric acid, 5-amino-5-oxovaleric acid, 5-aminovaleric acid hydrochloride, 5-(dimethylamino)valeric acid hydrochloride, 5-aminovaleric acid hydroiodide, 5-aminovaleric acid ethyl ester hydrochloride, 5-amino-5-oxovaleric acid, 5-benzoylvaleric acid, 5-(benzoylamino)-valeric acid or 4-cyano-4-(phenylthioformylthio)valeric acid. Thus, the above-mentioned types of valeric acid derivatives can promote the formation of a dipole layer, ensure the quasi-ohmic contact at the interface between the dipole layer and the perovskite layer, promote the perovskite solar cell from the Schottky / PN cascade heterojunction type to a single PN heterojunction device, reduce the loss of electrons during transmission, and improve the transmission efficiency of electrons.

[0012] According to an embodiment of the present application, the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxylphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. Thus, the above-mentioned types of hexafluoropropane derivatives have a high degree of symmetry, can promote the formation of the perovskite layer and the close connection with the dipole layer, avoid the hydrolysis of the perovskite, improve the stability of the perovskite layer, and can promote the charge collection efficiency of the dipole layer.

[0013] According to an embodiment of the present application, the perovskite solar cell further includes a hole transport layer, the hole transport layer is arranged on the side of the perovskite layer away from the dipole layer, the pentanoic acid derivative includes at least one of 3-aminopentanoic acid, 5-aminopentanoic acid, 5-(dimethylamino)pentanoic acid, 5-amino-5-oxopentanoic acid, 5-aminopentanoic acid hydrochloride, 5-(dimethylamino)pentanoic acid hydrochloride, 5-aminopentanoic acid hydroiodide or 5-aminopentanoic acid ethyl ester hydrochloride, the hexafluoropropane derivative The compound includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. Thus, the formation of a dipole layer in a hole-free (trans structure) perovskite solar cell can be promoted, the charge collection and transfer efficiency of the dipole layer can be promoted, and the photoelectric conversion efficiency of the hole-free (trans structure) perovskite solar cell can be improved.

[0014] According to an embodiment of the present application, the perovskite solar cell further includes an electron transport layer, which is arranged on a side of the perovskite layer away from the dipole layer, the valeric acid derivative includes at least one of 5-amino-5-oxopentanoic acid, 5-benzoylpentanoic acid, 5-(benzoylamino)-n-pentanoic acid or 4-cyano-4-(phenylthioformylthio)pentanoic acid, and the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. This can promote the formation of a dipole layer in an electron-free (formal structure) perovskite solar cell, promote the charge collection and transfer efficiency of the dipole layer, and improve the photoelectric conversion efficiency of the electron-free (formal structure) perovskite solar cell.

[0015] According to an embodiment of the present application, the perovskite layer includes ABX3, A includes FA + 、MA + , Cs + or DMA + At least one of, B includes Pb 2+ or Sn 2+ At least one of X includes I - Br - , Cl - 、SCN - At least one of the above. Thus, a perovskite layer can be formed, which can absorb a wide range of sunlight wavelengths and efficiently convert light energy into electrical energy.

[0016] In the second aspect of the present application, the present application proposes a method for preparing the perovskite solar cell described in the first aspect. According to an embodiment of the present application, the method includes: forming a dipole layer on one side of the substrate, the dipole layer including a valeric acid derivative and a hexafluoropropane derivative; forming a perovskite layer on the side of the dipole layer away from the substrate; and forming an electrode layer on the side of the perovskite layer away from the dipole layer. In this way, the charge collection rate of the insulating dipole layer can be improved, the efficiency of the photogenerated charge being transferred from the perovskite layer to the electrode layer can be improved, and the photoelectric conversion efficiency of the perovskite solar cell can be improved.

[0017] According to an embodiment of the present application, the method may further include at least one of the following additional technical features:

[0018] According to an embodiment of the present application, the method for forming the dipole layer includes: mixing the valeric acid derivative, the hexafluoropropane derivative and a solvent into a slurry and forming it on one side of the substrate, and annealing to form the dipole layer. Thus, adding the hexafluoropropane derivative in the process of forming the dipole layer can improve the charge collection rate of the dipole layer and improve the photoelectric conversion efficiency of the perovskite solar cell.

[0019] According to an embodiment of the present application, based on the total mass of the slurry, the mass proportion of the valeric acid derivative is 0.5%-1%. Thus, by making the mass proportion of the valeric acid derivative within the above range, the insulation of the dipole layer can be improved.

[0020] According to an embodiment of the present application, based on the total mass of the slurry, the mass proportion of the hexafluoropropane derivative is 0.2%-0.5%. Thus, by making the mass proportion of the hexafluoropropane derivative within the above range, the content of the hexafluoropropane derivative in the dipole layer can be increased, and the charge collection rate of the dipole layer can be increased.

[0021] According to an embodiment of the present application, the solvent includes at least one of isopropanol, methanol, ethanol, and dimethyl sulfoxide (DMSO). Thus, the above-mentioned types of solvents are helpful for dissolving the valeric acid derivatives and the hexafluoropropane derivatives.

[0022] According to an embodiment of the present application, the annealing is performed at a temperature of 80° C. to 120° C. Therefore, the temperature range is conducive to the crystallization of perovskite and improves the quality of the perovskite film.

[0023] According to an embodiment of the present application, the annealing time is 5 minutes to 15 minutes. Therefore, within the above time range, the perovskite is helpful to complete the phase transformation, that is, the transformation from the β phase to the α phase.

[0024] In the third aspect of the present application, the present application proposes a photovoltaic module. According to an embodiment of the present application, the photovoltaic module includes the perovskite solar cell described in the first aspect. The photovoltaic module has all the features and advantages of the aforementioned perovskite solar cell, which will not be repeated here. In general, it has at least a higher photoelectric conversion efficiency.

[0025] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0027] Figure 1The structure of the perovskite solar cell according to the embodiment of the present application is shown in FIG. Figure 1 ;

[0028] Figure 2 The structure of the perovskite solar cell according to the embodiment of the present application is shown in FIG. Figure 2 ;

[0029] Figure 3 The structure of the perovskite solar cell according to the embodiment of the present application is shown in FIG. Figure 3 ;

[0030] Figure 4 The structure of the perovskite solar cell according to the embodiment of the present application is shown in FIG. Figure 4 ;

[0031] Figure 5 It is a flow chart of preparing a perovskite solar cell according to an embodiment of the present application.

[0032] Description of reference numerals:

[0033] 1: Perovskite solar cell; 11: Substrate; 12: Dipole layer; 13: Perovskite layer; 14: Electrode layer; 15: Hole transport layer; 16: Electron transport layer; 17: Buffer layer. DETAILED DESCRIPTION

[0034] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0035] For simplicity, only some numerical ranges are specifically disclosed herein. However, any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, and any upper limit can be combined with any other upper limit to form an unspecified range. In addition, each separately disclosed point or single value can itself be combined as a lower limit or upper limit with any other point or single value or with other lower limits or upper limits to form an unspecified range.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0037] In this document, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0038] In this document, the terms "include" or "comprising" are open expressions, that is, including the contents specified in the present application but not excluding other contents.

[0039] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. Further, in the description of this application, unless otherwise specified, the meaning of "plurality" is two or more.

[0040] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0041] Perovskite solar cells are solar cells that use perovskite-type organic metal halide semiconductors as light-absorbing materials. They belong to the third generation of solar cells and are also called new concept solar cells. Solar cells are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical reaction. Their working principle is that when sunlight shines on the pn junction of a semiconductor, it will stimulate the formation of hole-electron pairs (excitons). Under the action of the pn junction electric field, the excitons are first separated into electrons and holes and transported to the cathode and anode respectively. Photogenerated holes flow to the p region, and photogenerated electrons flow to the n region. When the circuit is connected, current is formed. When a single solar cell is multiplied into a photovoltaic module, the battery may face the problem of reverse bias tolerance when it is put into practical use.

[0042] Reverse bias refers to the phenomenon that occurs when the photogenerated voltage in a solar cell is less than the operating voltage of the cell. In a solar cell, when light shines on the surface of the cell, photons excite electrons to jump from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes separate under the action of the electric field and form a current in the external circuit. Under normal working conditions, the operating voltage of a solar cell should be greater than the photogenerated voltage in order to generate effective electrical energy. However, if the solar cell is affected by shadows, uneven illumination, or excessive temperature, the photogenerated voltage may be greater than the operating voltage of the cell, causing the cell to generate reverse bias. Reverse bias can cause the performance of the solar cell to deteriorate, and in severe cases, the cell may be damaged.

[0043] The present application proposes a perovskite solar cell including a dipole layer, which utilizes an insulating dipole layer to ensure quasi-ohmic contact at the interface. At the same time, by adding a hexafluoropropane derivative to the dipole layer, the charge collection rate of the insulating dipole layer can be improved, and the efficiency of transferring photogenerated charges from the perovskite layer to the electrode layer can be improved, thereby reducing charge recombination and improving the photoelectric conversion efficiency of the perovskite solar cell.

[0044] Perovskite solar cells

[0045] The present application proposes a perovskite solar cell. According to an embodiment of the present application, referring to Figure 1 As shown, the perovskite solar cell 1 includes: a substrate 11; a dipole layer 12, wherein the dipole layer 12 is arranged on one side of the substrate 11, and the dipole layer 12 includes a valeric acid derivative and a hexafluoropropane derivative; a perovskite layer 13, wherein the perovskite layer 13 is arranged on a side of the dipole layer 12 away from the substrate 11; and an electrode layer 14, wherein the electrode layer 14 is arranged on a side of the perovskite layer 13 away from the dipole layer 12.

[0046] The perovskite solar cell proposed in the present application, the material forming the dipole layer includes valeric acid derivatives, which can improve the insulation and stability of the dipole layer. The material forming the dipole layer also includes hexafluoropropane derivatives, which can improve the charge collection rate of the insulating dipole layer, and improve the efficiency of the photogenerated charge being transferred from the perovskite layer to the electrode layer, thereby reducing charge recombination and improving the photoelectric conversion efficiency of the perovskite solar cell. At the same time, the content of fluorine atoms in the hexafluoropropane derivatives is relatively high, which can increase the probability of fluorine reacting with organic ions in the perovskite layer, so that the hexafluoropropane derivatives are adsorbed on the surface of the perovskite layer, and promote the growth of the perovskite layer. The hydrophobicity of valeric acid derivatives and hexafluoropropane derivatives can further reduce the probability of the perovskite layer being corroded by water and improve the stability of the perovskite layer.

[0047] In some embodiments of the present application, the mass ratio of the valeric acid derivative to the hexafluoropropane derivative in the dipole layer may be (5-10): (2-5). For example, it may be 5:2, 5:3, 5:4, 1:1, 3:1, 2:1, 3:2, 6:5, 7:2, 7:3, 7:4, 7:5, 4:1, 8:3, 8:5, 9:2, 9:4, 9:5, 5:1, 10:3, etc., or may be a range of any of the above values. Thus, by making the mass ratio of the valeric acid derivative to the hexafluoropropane derivative within the above range, the charge collection and transmission efficiency of the dipole layer can be improved while improving the insulation performance of the dipole layer, thereby improving the photoelectric conversion efficiency of the battery.

[0048] As an example, based on the total mass of the dipole layer, the mass proportion of the valeric acid derivative can be 0.5%-1.5%. For example, it can be 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, etc., or can be a range composed of any of the above values. In this way, the charge collection and transmission efficiency of the dipole layer can be improved, and the photoelectric conversion efficiency of the battery can be improved.

[0049] As an example, based on the total mass of the dipole layer, the mass proportion of the hexafluoropropane derivative can be 0.1%-1%. For example, it can be 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, etc., or can be a range composed of any of the above values. In this way, the charge collection and transmission efficiency of the dipole layer can be improved, and the photoelectric conversion efficiency of the battery can be improved.

[0050] In some embodiments of the present application, the thickness of the dipole layer may be 4 nm to 6 nm. For example, it may be 4 nm, 4.5 nm, 5 nm, 5.5 nm or 6 nm, or may be a range of any of the above values. Thus, the content of the valeric acid derivative and the hexafluoropropane derivative is increased, the charge collection rate of the dipole layer is further increased, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

[0051] In some embodiments of the present application, the pentanoic acid derivative includes at least one of 3-aminopentanoic acid, 5-aminopentanoic acid, 5-(dimethylamino)pentanoic acid, 5-amino-5-oxopentanoic acid, 5-aminopentanoic acid hydrochloride, 5-(dimethylamino)pentanoic acid hydrochloride, 5-aminopentanoic acid hydroiodide, 5-aminopentanoic acid ethyl ester hydrochloride, 5-amino-5-oxopentanoic acid, 5-benzoylpentanoic acid, 5-(benzoylamino)-pentanoic acid or 4-cyano-4-(phenylthioformylthio)pentanoic acid. Thus, the above-mentioned types of pentanoic acid derivatives can promote the formation of a dipole layer, ensure the quasi-ohmic contact at the interface between the dipole layer and the perovskite layer, promote the perovskite solar cell from the Schottky / PN cascade heterojunction type to a single PN heterojunction device, reduce the loss of electrons during transmission, and improve the transmission efficiency of electrons.

[0052] Specifically, when the valeric acid derivative contains a carbonyl group, the carbonyl group will react with the Pb 2+ A metal chelation reaction occurs, thereby promoting the close connection between the perovskite layer and the dipole layer, providing an energy buffer layer for the transmission of photogenerated carriers, which is beneficial to the transmission of charges and the collection of carriers.

[0053] In some embodiments of the present application, the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxylphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. Thus, the above-mentioned hexafluoropropane derivatives have a high degree of symmetry, good solubility, and are conducive to forming a uniform dipole layer. On the one hand, fluorine can react with organic ions in the perovskite layer to make the hexafluoropropane derivatives adsorbed on the lower surface of the perovskite layer, which can promote the formation of the perovskite layer and the close connection between the perovskite layer and the dipole layer, thereby promoting the transmission of electrons. On the other hand, fluorine is hydrophobic. After being adsorbed on the lower surface of the perovskite layer, it can prevent the perovskite layer from being hydrolyzed, thereby improving the stability of the perovskite layer. In addition, the hexafluoropropane derivatives can offset part of the insulation in the dipole layer and improve the charge collection efficiency of the dipole layer.

[0054] In some embodiments of the present application, the substrate 11 may include but is not limited to transparent conductive glass or transparent conductive plastic prepared in various ways, for example, may include but is not limited to indium tin oxide (ITO) conductive glass, fluorine-doped tin oxide (FTO) conductive glass, ITO conductive plastic, FTO conductive plastic, etc.

[0055] In some embodiments of the present application, the electrode layer 14 is a metal electrode, which may be, for example, a silver electrode (Ag), a copper electrode (Cu), a gold electrode (Au), an aluminum electrode (Al), a molybdenum electrode (Mo), or a chromium electrode (Cr).

[0056] In some embodiments of the present application, the preferred thickness of the electrode layer may be 60-100 nm, for example, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, etc., or may be a range consisting of any of the above values.

[0057] In some embodiments of the present application, the perovskite solar cell further comprises a hole transport layer 15, referring to Figure 2 As shown, the hole transport layer 15 is disposed on a side of the perovskite layer 13 away from the dipole layer 12 . At this time, the pentanoic acid derivative includes at least one of 3-aminopentanoic acid, 5-aminopentanoic acid, 5-(dimethylamino)pentanoic acid, 5-amino-5-oxopentanoic acid, 5-aminopentanoic acid hydrochloride, 5-(dimethylamino)pentanoic acid hydrochloride, 5-aminopentanoic acid hydroiodide or 5-aminopentanoic acid ethyl ester hydrochloride; the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. This can promote the formation of a dipole layer in a hole-free (inverse structure) perovskite solar cell, promote the charge collection and transfer efficiency of the dipole layer, and improve the photoelectric conversion efficiency of the hole-free (inverse structure) perovskite solar cell.

[0058] In some embodiments of the present application, the material forming the hole transport layer may include 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), carbazoles, triphenylamines, polytriarylamine (PTAA), nickel oxide (NiO x ), poly 3,4-ethylenedioxythiophene, polystyrene sulfonate (PEDOT:PSS) or at least one of the following.

[0059] In some embodiments of the present application, the thickness of the hole transport layer may be 50 nm-80 nm, for example, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm or 80 nm, or a range consisting of any of the above values.

[0060] In some embodiments of the present application, the perovskite solar cell further comprises an electron transport layer 16, referring to Figure 3 As shown, the electron transport layer 16 is arranged on the side of the perovskite layer 13 away from the dipole layer 12. At this time, the valeric acid derivative includes at least one of 5-amino-5-oxovaleric acid, 5-benzoylvaleric acid, 5-(benzoylamino)-valeric acid or 4-cyano-4-(phenylthioformylthio)valeric acid; the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane. This can promote the formation of a dipole layer in an electron-free (formal structure) perovskite solar cell, promote the charge collection and transfer efficiency of the dipole layer, and improve the photoelectric conversion efficiency of the electron-free (formal structure) perovskite solar cell.

[0061] In some embodiments of the present application, the material forming the electron transport layer may include [6,6]-phenyl-C 61 -Methyl butyrate (PC 61 BM), [6,6]-phenyl-C 71 -Methyl butyrate (PC 71 BM), fullerene C 60 , Fullerene C 70 , tin dioxide and zinc oxide.

[0062] In some embodiments of the present application, the thickness of the electron transport layer may be 10 nm to 40 nm, for example, 10 nm, 20 nm, 30 nm or 40 nm, or any range of the above values.

[0063] In some embodiments of the present application, the perovskite solar cell further comprises a buffer layer 17, referring to Figure 4 As shown, the buffer layer 17 is arranged on the side of the electron transport layer 16 away from the perovskite layer 13. The buffer layer 17 can form an energy level gradient on the electron transport path to promote electron transport; inhibit metal ion migration and protect the perovskite absorption layer. The material forming the buffer layer includes at least one of bathocuproine (BCP) or tin dioxide (SnO2).

[0064] In some embodiments of the present application, the thickness of the buffer layer may be 1 nm to 10 nm, for example, 1 nm, 3 nm, 5 nm, 7 nm, 9 nm or 10 nm, or a range consisting of any of the above values.

[0065] In some embodiments of the present application, the perovskite layer includes ABX3, A includes FA + 、MA + , Cs + or DMA + At least one of, B includes Pb 2+ or Sn 2+ At least one of X includes I - Br - , Cl - 、SCN - Of course, it is to be understood that the perovskite material of the present application is not limited to the above compounds, and may also be other perovskite materials deemed appropriate by those skilled in the art.

[0066] In some embodiments of the present application, the thickness of the perovskite layer may be 500 nm to 700 nm, for example, 500 nm, 550 nm, 600 nm, 650 nm or 700 nm, or a range consisting of any of the above values.

[0067] Method for preparing perovskite solar cells

[0068] The present application proposes a method for preparing a perovskite solar cell. According to an embodiment of the present application, the method comprises: forming a dipole layer on one side of a substrate, the dipole layer comprising a valeric acid derivative and a hexafluoropropane derivative; forming a perovskite layer on a side of the dipole layer away from the substrate; and forming an electrode layer on a side of the perovskite layer away from the dipole layer.

[0069] The method proposed in the present application uses valeric acid derivatives and hexafluoropropane derivatives to form a dipole layer in the process of preparing perovskite solar cells. By adding hexafluoropropane derivatives to the dipole layer, the charge collection rate of the insulating dipole layer can be improved, and the efficiency of transferring photogenerated charges from the perovskite layer to the electrode layer can be improved, thereby reducing charge recombination and improving the photoelectric conversion efficiency of the perovskite solar cell.

[0070] The method for preparing a perovskite solar cell proposed in this application is described in detail below. Figure 5 , the method may include:

[0071] S10: Forming a dipole layer on one side of the substrate

[0072] In some embodiments of the present application, the method for forming the dipole layer includes: mixing valeric acid derivatives, hexafluoropropane derivatives, and solvents into a slurry and forming it on one side of the substrate, and annealing to form the dipole layer. Thus, adding hexafluoropropane derivatives in the process of forming the dipole layer can improve the charge collection rate of the dipole layer and improve the photoelectric conversion efficiency of the perovskite solar cell. At the same time, since the hexafluoropropane derivatives are highly symmetrical and have high solubility in solvents, the uniformity of the distribution of the hexafluoropropane derivatives in the dipole layer can be improved. Since there are a large number of F atoms in the hexafluoropropane derivatives, when the perovskite layer is formed, F can react with the organic ions in the perovskite, which is beneficial to the growth of the perovskite. The hydrophobicity of the hexafluoropropane derivatives can also reduce the risk of the perovskite layer being corroded by water and improve the stability of the perovskite layer.

[0073] In some embodiments of the present application, based on the total mass of the slurry, the mass proportion of the valeric acid derivative can be 0.5%-1%. For example, it can be 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, etc., or can be a range composed of any of the above values. Thus, by making the mass proportion of the valeric acid derivative within the above range, the insulation of the dipole layer is improved.

[0074] In some embodiments of the present application, based on the total mass of the slurry, the mass proportion of the hexafluoropropane derivative can be 0.2%-0.5%. For example, it can be 0.2%, 0.3%, 0.4%, 0.5%, etc., or it can be a range composed of any of the above values. Therefore, by making the mass proportion of the hexafluoropropane derivative within the above range, the content of the hexafluoropropane derivative in the dipole layer is increased, and the charge collection rate of the dipole layer is increased.

[0075] In some embodiments of the present application, the solvent may include at least one of isopropanol, methanol, ethanol, and DMSO, thereby improving the solubility of the valeric acid derivative and the hexafluoropropane derivative.

[0076] In some embodiments of the present application, the annealing temperature may be 80°C to 120°C. For example, it may be 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, etc., or may be a range of any of the above values. Thus, within the above temperature range, perovskite crystallization is beneficial and the quality of the perovskite film is improved.

[0077] In some embodiments of the present application, the annealing time may be 5 min to 15 min. For example, it may be 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, etc., or may be a range of any of the above values. Thus, within the above time range, it is helpful for the perovskite to complete the phase transformation, that is, the transformation from the β phase to the α phase.

[0078] S20: forming a perovskite layer on a side of the dipole layer away from the substrate

[0079] According to some embodiments of the present application, a method of forming perovskite may include at least one of an evaporation method, a sputtering method, a chemical bath deposition method, a precursor liquid spin coating method, a precursor liquid blade coating method, and a slit coating method.

[0080] S30: forming an electrode layer on a side of the perovskite layer away from the dipole layer

[0081] According to some embodiments of the present application, the method of forming the electrode layer may include at least one of an evaporation method, a sputtering method, a chemical bath deposition method, a precursor liquid spin coating method, a precursor liquid blade coating method, and a slit coating method.

[0082] In some embodiments of the present application, when the perovskite solar cell is a formal structure, the method may further include: a step of forming a hole transport layer on a side of the perovskite layer away from the dipole layer.

[0083] In some embodiments of the present application, the method of forming the hole transport layer may include at least one of a chemical bath deposition method, a precursor liquid spin coating method, a precursor liquid blade coating method, and a slit coating method.

[0084] In some embodiments of the present application, when the perovskite solar cell is an inverted structure, the method may further include: a step of forming an electron transport layer on a side of the perovskite layer away from the dipole layer.

[0085] In some embodiments of the present application, a method for forming an electron transport layer may include at least one of an evaporation method, a sputtering method, a chemical bath deposition method, a precursor liquid spin coating method, a precursor liquid blade coating method, and a slit coating method.

[0086] In some embodiments of the present application, when the perovskite solar cell is an inverted structure, the method may further include: a step of forming a buffer layer on a side of the electron transport layer away from the perovskite layer.

[0087] In some embodiments of the present application, the method for forming the buffer layer may include evaporation, sputtering, chemical bath deposition, precursor liquid spin coating, precursor liquid scraping, slit coating, etc.

[0088] Photovoltaic panels

[0089] The present application proposes a photovoltaic module. According to an embodiment of the present application, the photovoltaic module includes the aforementioned perovskite solar cell. The photovoltaic module has all the features and advantages of the aforementioned perovskite solar cell, which will not be repeated here. In general, it has at least a higher photoelectric conversion efficiency.

[0090] Exemplarily, the photovoltaic module may include a plurality of perovskite solar cells connected in series and / or in parallel, wherein the plurality of perovskite solar cells may be arranged at intervals or stacked together in a shingled form.

[0091] The scheme of the present application will be explained below in conjunction with the embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present application and should not be considered as limiting the scope of the present application. If no specific technology or conditions are indicated in the embodiments, the technology or conditions described in the literature in this area or the product specification are carried out. The reagents used or the instruments that do not indicate the manufacturer are all conventional products that can be obtained commercially.

[0092] Example 1

[0093] Preparation of hole-free (inverse structure) perovskite solar cells, the specific process is as follows:

[0094] Step 1: Place the ITO substrate in an ultrasonic cleaning instrument and perform ultrasonic cleaning with deionized water, alcohol, deionized water, and alcohol respectively. Each step takes 15 minutes. Blow dry with a N2 gun and then perform UV-zone treatment for 20 minutes for standby use.

[0095] Step 2: 5-amino-5-oxovaleric acid salt and 2,2-bis(4-methylphenyl)hexafluoropropane were diluted in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovaleric acid salt was 0.75% and the mass proportion of 2,2-bis(4-methylphenyl)hexafluoropropane was 0.2%, and the mixture was spin-coated on the upper surface of ITO treated by UV-zone in step 1, with a spin-coating speed of 5000 rpm for 20 s, and annealed at 100° C. for 10 min, recorded as OAO layer, with a thickness of 6 nm;

[0096] Step 3: 1.5 mol of FA 0.9 Cs 0.1 PbI3 was dissolved in 1 ml of an organic solvent with a volume ratio of dimethylformamide: dimethyl sulfoxide (DMF:DMSO) = 4:1, and stirred for 2 h to obtain FA 0.9 Cs 0.1 PbI3 perovskite precursor solution;

[0097] Step 4: Take 100 μL of the FA prepared in step 3 0.9 Cs 0.1 PbI3 perovskite precursor solution is added dropwise to the upper surface of the OAO layer prepared in step 2, extracted with an anti-solvent, and annealed at 150°C for 20 minutes to obtain FA. 0.9 Cs 0.1 PbI3 perovskite film, thickness 600nm;

[0098] Step 5: Substitute the FA obtained in step 4 0.9 Cs 0.1 30nm C was deposited on the surface of PbI3 perovskite film by thermal evaporation 60 As electron transport layer;

[0099] Step 6: thermally evaporate bathcopper ether (BCP) again on the electron transport layer in step 5. The main function of BCP is to act as a hole blocking layer to prevent electron-hole recombination. The thickness is 6 nm.

[0100] Step 7: The effective area of ​​evaporation on the BCP barrier layer prepared in step 6 is 0.071 cm 2 , silver with a thickness of 100nm, used as the metal anode to prepare efficient FA 0.9 Cs 0.1 PbI3 perovskite solar cells.

[0101] Example 2

[0102] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-aminophenyl)hexafluoropropane in 1 mL of isopropanol solution to make the mass proportion of 5-amino-5-oxovalerate 0.75% and the mass proportion of 2,2-bis(4-aminophenyl)hexafluoropropane 0.2%, and spin-coat it on the upper surface of ITO treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAA layer, and the thickness is 6nm.

[0103] Example 3

[0104] FA was prepared according to the method described in Example 1 0.9 Cs 0.1The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-methylphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 0.75%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.2%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm 20s, and anneal at 100°C for 10min, record the OAC layer, and the thickness is 6nm.

[0105] Example 4

[0106] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The difference of the PbI3 perovskite solar cell lies in step 2, which is as follows: 5-aminovaleric acid and 2,2-bis(4-aminophenyl)hexafluoropropane are diluted in 1 mL of isopropanol solution to make the mass proportion of 5-aminovaleric acid 0.75% and the mass proportion of 2,2-bis(4-aminophenyl)hexafluoropropane 0.2%, and spin-coated on the upper surface of ITO treated by UV-zone in step 1, with a spin coating speed of 5000 rpm for 20 s, and annealed at 100°C for 10 min, and recorded as the NAA layer with a thickness of 6 nm.

[0107] Example 5

[0108] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-aminovaleric acid and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-aminovaleric acid is 0.75%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.2%, and spin-coat it on the ITO surface treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the NAO layer, and the thickness is 6nm.

[0109] Example 6

[0110] FA was prepared according to the method described in Example 1 0.9 Cs 0.1The difference of PbI3 perovskite solar cell lies in step 2, which is as follows: 5-aminovaleric acid hydrochloride and 2,2-bis(4-aminophenyl)hexafluoropropane are diluted in 1 mL of isopropanol solution to make the mass proportion of 5-aminovaleric acid hydrochloride 0.75% and the mass proportion of 2,2-bis(4-aminophenyl)hexafluoropropane 0.2%, and they are spin-coated on the upper surface of ITO treated by UV-zone in step 1, with a spin coating speed of 5000 rpm for 20 s, and annealed at 100°C for 10 min, and recorded as HAA layer with a thickness of 6 nm.

[0111] Example 7

[0112] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-aminovaleric acid hydrochloride and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-aminovaleric acid hydrochloride is 0.75%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.2%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm 20s, and anneal at 100°C for 10min, record the HAO layer, and the thickness is 6nm.

[0113] Example 8

[0114] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution to make the mass proportion of 5-amino-5-oxovalerate 0.2% and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane 0.2%, and spin-coat it on the upper surface of ITO treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-1 layer, and the thickness is 6nm.

[0115] Example 9

[0116] FA was prepared according to the method described in Example 1 0.9 Cs 0.1The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 0.5%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.2%, and spin-coat it on the ITO surface treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-2 layer, and the thickness is 6nm.

[0117] Example 10

[0118] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 1%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.2%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-3 layer, and the thickness is 6nm.

[0119] Embodiment 11

[0120] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 0.75%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.3%, and spin-coat it on the upper surface of ITO treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-6 layer, and the thickness is 6nm.

[0121] Example 12

[0122] FA was prepared according to the method described in Example 1 0.9 Cs 0.1The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 0.75%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.5%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-7 layer, and the thickness is 6nm.

[0123] Example 13

[0124] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 0.5%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.5%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm 20s, anneal at 100°C for 10min, record the OAO-9 layer, and the thickness is 6nm.

[0125] Embodiment 14

[0126] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The PbI3 perovskite solar cell is different in step 2, specifically: dilute 5-amino-5-oxovalerate and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovalerate is 1%, and the mass proportion of 2,2-bis(4-carboxyphenyl)hexafluoropropane is 0.5%, and spin-coat it on the upper surface of ITO treated with UV-zone in step 1, the spin coating speed is 5000 rpm 20s, and anneal at 100°C for 10min, record the OAO-9 layer.

[0127] Embodiment 15

[0128] Taking the best solution in hole-free (inverse structure) perovskite solar cells as an example, the specific process of preparing electron-free (formal structure) perovskite solar cells is as follows:

[0129] Step 1: Place the ITO substrate in an ultrasonic cleaning instrument and perform ultrasonic cleaning with deionized water, alcohol, deionized water, and alcohol respectively. Each step takes 15 minutes. Blow dry with a N2 gun and then perform UV-zone treatment for 20 minutes for standby use.

[0130] Step 2: dilute 5-amino-5-oxovaleric acid and 2,2-bis(4-carboxyphenyl)hexafluoropropane in 1 mL of isopropanol solution, so that the mass proportion of 5-amino-5-oxovaleric acid is 1% and the mass proportion of 2-bis(4-carboxyphenyl)hexafluoropropane is 0.5%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1, the spin coating speed is 5000 rpm for 20 s, and anneal at 100° C. for 10 min to record the OAO (free-ETL) layer with a thickness of 6 nm;

[0131] Step 3: 1.5 mol of FA 0.9 Cs 0.1 PbI3 was dissolved in 1 ml of an organic solvent with a volume ratio of DMF:DMSO = 4:1 and stirred for 2 h to obtain FA. 0.9 Cs 0.1 PbI3 perovskite precursor solution;

[0132] Step 4: Take 100 μL of the FA prepared in step 3 0.9 Cs 0.1 PbI3 precursor solution is added dropwise to the upper surface of the OAO (free-ETL) layer prepared in step 2, extracted with an anti-solvent, and annealed at 150°C for 20 min to obtain FA. 0.9 Cs 0.1 PbI3 perovskite film, thickness 600nm;

[0133] Step 5: First, 1 mol of lithium salt and 1 mol of cobalt salt were dissolved in 1 mL of acetonitrile respectively, then 0.072 mg of spiro-OMeTAD powder was dissolved in 1 mL of chlorobenzene, and finally 28 μL of TBP (4-tert-butylpyridine), 17 μL of lithium salt solution and 30 μL of cobalt salt solution were added to the spiro-OMeTAD preformed solution to obtain the spiro-OMeTAD solution;

[0134] Step 6: Spin-coat the spiro-OMeTAD solution in step 5 onto the FA0.9Cs0.1PbI3 perovskite film prepared in step 5 at a speed of 4000 rpm for 30 seconds to obtain a spiro-OMeTAD hole transport layer with a thickness of 50 nm and no heating required;

[0135] Step 7: The spiro-OMeTAD hole transport layer obtained in step 6 is placed in an oxygen tank for full oxidation for 24 hours;

[0136] Step 8: Evaporate the spiro hole transport layer oxidized in step 7 with an effective area of ​​0.071 cm 2, silver with a thickness of 100nm, as a metal electrode, to prepare efficient FA 0.9 Cs 0.1 PbI3 perovskite solar cells.

[0137] Comparative Example 1

[0138] The hole-free (inverse structure) perovskite solar cell without a dipole layer is prepared. The specific process is as follows:

[0139] Step 1: Place the ITO substrate in an ultrasonic cleaning instrument and perform ultrasonic cleaning with deionized water, alcohol, deionized water, and alcohol respectively. Each step takes 15 minutes. Blow dry with a N2 gun and then perform UV-zone treatment for 20 minutes for standby use.

[0140] Step 2: 1.5 mol of FA 0.9 Cs 0.1 PbI3 was dissolved in 1 ml of an organic solvent with a volume ratio of DMF:DMSO = 4:1 and stirred for 2 h to obtain FA. 0.9 Cs 0.1 PbI3 perovskite precursor solution;

[0141] Step 3: Take 100 μL of the FA prepared in step 2 0.9 Cs 0.1 PbI3 precursor solution is added dropwise to the upper surface of ITO treated by UV-zone in step 1, extracted with anti-solvent, and annealed at 150℃ for 20min to obtain FA 0.9 Cs 0.1 PbI3 perovskite film, thickness 600nm;

[0142] Step 4: Substitute the FA obtained in step 3 0.9 Cs 0.1 30nm C was deposited on the surface of PbI3 perovskite film by thermal evaporation 60 As electron transport layer;

[0143] Step 5: BCP is thermally evaporated again on the electron transport layer in step 4. The main function of BCP is to act as a hole blocking layer to prevent electron-hole recombination. The thickness is 6nm.

[0144] Step 6: The effective area of ​​evaporation on the BCP barrier layer prepared in step 5 is 0.071 cm 2 , silver with a thickness of 100nm, used as the metal anode to prepare efficient FA 0.9 Cs 0.1 PbI3 perovskite solar cells.

[0145] Comparative Example 2

[0146] FA was prepared according to the method described in Example 1 0.9 Cs 0.1 The difference of PbI3 perovskite solar cell is that only 5-amino-5-oxopentanoate is used to prepare the dipole layer. The specific process is as follows:

[0147] Step 2: Dilute 5-amino-5-oxovaleric acid salt in 1 mL of isopropanol solution to make the mass proportion of 5-amino-5-oxovaleric acid salt be 0.75%, and spin-coat it on the upper surface of ITO treated by UV-zone in step 1. The spin-coating speed is 5000 rpm for 20 s. Anneal at 100°C for 10 min to form an OA layer with a thickness of 6 nm.

[0148] The specific types and proportions of the valeric acid derivatives and hexafluoropropane derivatives used in Examples 1 to 15 and Comparative Examples 1 to 2 are shown in Table 1.

[0149] Table 1

[0150]

[0151]

[0152] Performance Testing

[0153] 1. VOC (open circuit voltage) calculation method

[0154] In the open circuit state. Unit: V, the size of Voc is generally determined by the physical properties and energy range differences of different materials. At the same time, the energy level barrier between interfaces or non-radiative recombination caused by defects is also a factor that cannot be ignored.

[0155] 2. Jsc (short-circuit current) calculation method

[0156] The current flowing through the unit area in the short-circuit state (unit: mA / cm 2 ), the factors that affect Jsc include film thickness, quality of each layer of film, material band gap, and incident light irradiation.

[0157] 3. FF (fill factor) calculation method

[0158] FF is the ratio of the maximum output power of the perovskite solar cell to the product of the open circuit voltage and the short circuit current density, that is: FF = Vmax*Jmax / Voc*Jsc

[0159] 4. PCE (electric-to-optical conversion efficiency) calculation method

[0160] The size of PCE is equal to the ratio of the maximum output power Pmax of the battery to the standard solar incident power, which can be expressed as: PCE = J sc *V oc *FF / Pin

[0161] The test results of the perovskite solar cells in Examples 1 to 20, Comparative Examples 1 and 2 are shown in Table 2. Compared with Comparative Examples 1 and 2, the hole transport layer-free cells or electron transport layer-free cells prepared by using different types of valeric acid derivatives and different types of hexafluoropropane derivatives in Examples 1 to 7 and 15 can improve the photoelectric conversion efficiency of the cells; in Examples 8 to 14, the mass proportion of valeric acid derivatives and the mass proportion of hexafluoropropane derivatives are changed within a certain range, which can also improve the photoelectric conversion efficiency of the cells.

[0162] Table 2

[0163] Voc / V <![CDATA[Jsc / mA*cm -2 ]]> FF / % PCE / % Example 1 1.07 24.32 79.43 20.67 Example 2 1.08 24.11 80.17 20.88 Example 3 1.11 24.80 82.33 22.67 Example 4 1.07 24.06 80.03 20.61 Example 5 1.08 24.43 79.67 21.02 Example 6 1.08 24.39 79.22 20.87 Example 7 1.10 24.48 81.02 21.82 Example 8 1.06 24.11 79.58 20.33 Example 9 1.07 24.15 79.20 20.46 Example 10 1.07 24.19 80 20.71 Embodiment 11 1.08 24.09 79.4 20.68 Example 12 1.08 24.12 79.65 20.75 Example 13 1.11 24.62 82.2 22.46 Embodiment 14 1.13 24.81 82.28 23.07 Embodiment 15 1.09 24.10 79.89 20.99 Comparative Example 1 1.05 23.81 78.82 19.72 Comparative Example 2 1.07 24.02 78.91 20.28

[0164] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0165] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A perovskite solar cell, characterized in that: include: substrate; A dipole layer, the dipole layer is disposed on one side of the substrate, the dipole layer comprising a valeric acid derivative and a hexafluoropropane derivative; A perovskite layer, wherein the perovskite layer is disposed on a side of the dipole layer away from the substrate; An electrode layer is disposed on a side of the perovskite layer away from the dipole layer.

2. The perovskite solar cell according to claim 1, characterized in that The mass ratio of the valeric acid derivative to the hexafluoropropane derivative in the dipole layer is (5-10):(2-5).

3. The perovskite solar cell according to claim 2, characterized in that: Based on the total mass of the dipole layer, the mass proportion of the valeric acid derivative is 0.5%-1.5%, and the mass proportion of the hexafluoropropane derivative is 0.1%-1%.

4. The perovskite solar cell according to claim 1, characterized in that: The thickness of the dipole layer is 4 nm to 6 nm.

5. The perovskite solar cell according to claim 1, characterized in that: The valeric acid derivatives include at least one of 3-aminovaleric acid, 5-aminovaleric acid, 5-(dimethylamino)valeric acid, 5-amino-5-oxovaleric acid, 5-aminovaleric acid hydrochloride, 5-(dimethylamino)valeric acid hydrochloride, 5-aminovaleric acid hydroiodide, 5-aminovaleric acid ethyl ester hydrochloride, 5-amino-5-oxovaleric acid, 5-benzoylvaleric acid, 5-(benzoylamino)-valeric acid or 4-cyano-4-(phenylthioformylthio)valeric acid; And / or, the hexafluoropropane derivative includes at least one of 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-xylyl)hexafluoropropane, 2,2-bis(3-nitrophenyl)hexafluoropropane, 2,2-bis(4-methylphenyl)hexafluoropropane, 2,2-bis(4-isocyanatophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane or 2,2-bis[4-(4-aminophenoxybenzene)]hexafluoropropane.

6. The perovskite solar cell according to claim 5, characterized in that: The perovskite solar cell further includes a hole transport layer, which is disposed on a side of the perovskite layer away from the dipole layer.

7. The perovskite solar cell according to claim 5, characterized in that: The perovskite solar cell further includes an electron transport layer, which is disposed on a side of the perovskite layer away from the dipole layer.

8. The perovskite solar cell according to claim 5, characterized in that: The perovskite layer includes ABX3, A includes FA + 、MA + , Cs + or DMA + At least one of B including Pb 2+ or Sn 2+ At least one of X includes I - Br - , Cl - 、SCN - At least one of .

9. A method for preparing a perovskite solar cell according to any one of claims 1 to 8, characterized in that: include: forming a dipole layer on one side of the substrate, the dipole layer comprising a valeric acid derivative and a hexafluoropropane derivative; forming a perovskite layer on a side of the dipole layer away from the substrate; An electrode layer is formed on a side of the perovskite layer away from the dipole layer.

10. The method according to claim 9, characterized in that The method for forming the dipole layer includes: mixing the valeric acid derivative, the hexafluoropropane derivative and a solvent into a slurry, forming the slurry on one side of the substrate, and annealing to form the dipole layer.

11. The method according to claim 10, characterized in that Satisfy at least one of the following conditions: Based on the total mass of the slurry, the mass proportion of the valeric acid derivative is 0.5%-1%; Based on the total mass of the slurry, the mass proportion of the hexafluoropropane derivative is 0.2%-0.5%; The solvent includes at least one of isopropanol, methanol, ethanol and dimethyl sulfoxide.

12. The method according to claim 10, characterized in that The annealing temperature is 80°C to 120°C; And / or, the annealing time is 5 min to 15 min.

13. A photovoltaic module, characterized in that: A perovskite solar cell comprising the perovskite solar cell according to any one of claims 1 to 8.

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