A waveform selective antenna

Abstract

The application discloses a wave shape selection antenna, which comprises a first metal structure, a second metal structure, a wave shape selection structure and a feeding structure, the first metal structure is connected with the second metal structure, the second metal structure is connected with the wave shape selection structure, the first metal structure is realized by forming a dipole structure with a circular loop and a truncated end through a gap on a metal patch structure, and the second metal structure is realized by using a microstrip line structure; the wave shape selection antenna has the advantages that the wave shape selection planar structure is integrated with the antenna structure, the wave shape selection planar structure function and the antenna function are combined, and when the wave shape selection antenna is used in a wireless communication system, the structural complexity can be reduced.

Description

Technical Field

[0001] The present invention relates to an antenna, and in particular to a waveform selection antenna. Background Art

[0002] High-power electromagnetic signals, such as electromagnetic pulses (EMP) and high-altitude nuclear electromagnetic pulses (HEMP), can penetrate wireless communication systems through gaps in antennas, potentially interfering with or even damaging sensitive equipment within them. In the strong electromagnetic pulse environments generated by these high-power electromagnetic signals, sensitive components within these devices are particularly susceptible, impacting their normal operation.

[0003] In recent years, researchers have studied and proposed waveform-selective electromagnetic components, known as waveform-selective planar structures (WSPs). Adding WSPs to wireless communication systems, combined with antennas, can mitigate high-power electromagnetic signals.

[0004] Existing waveform-selective planar structures are mostly implemented using waveform-selective metasurface technology. For example, Cheng Yongzhi et al. proposed a nonlinear circuit metasurface absorber that selectively absorbs specific pulse waves at the same frequency. This nonlinear circuit metasurface absorber consists of a metal square ring resonator with a nonlinear circuit composed of a diode and a resistor and capacitor in parallel, an intermediate dielectric substrate isolation layer, and a bottom ground layer. While waveform-selective planar structures, when used in conjunction with antennas, can resist high-power electromagnetic signals, they also increase the structural complexity of wireless communication systems, negatively impacting their miniaturization. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a waveform selection antenna that integrates a waveform selection plane structure and an antenna structure, has both waveform selection plane structure functions and antenna functions, and can reduce its structural complexity when used in a wireless communication system.

[0006] The technical solution adopted by the present invention to solve the above technical problems is: a waveform selection antenna, including a first metal structure, a second metal structure, a waveform selection structure and a feeding structure, the first metal structure is connected to the second metal structure, and the second metal structure is connected to the waveform selection structure, the first metal structure is realized by opening a gap on the metal patch structure to form a dipole structure with an internal circular loop and a truncated end, and the second metal structure is realized by a microstrip line structure; when the electromagnetic wave in free space is radiated to the first metal structure, if the electromagnetic wave is a continuous signal, the waveform selection structure cannot shield the electromagnetic wave, and the electromagnetic wave will form an oscillation between the first metal structure and the second metal structure, and then be transmitted to the feeding structure through the second metal structure to realize the reception of external electromagnetic waves. If the electromagnetic wave is a pulse signal, the The waveform selection structure can shield the electromagnetic wave, and the electromagnetic wave will not form oscillations between the first metal structure and the second metal structure. The second metal structure cannot transmit the electromagnetic wave to the feeding structure, thereby achieving shielding of external electromagnetic waves; when the feeding structure feeds the RF signal into the second metal structure, if the RF signal is a continuous signal, the waveform selection structure cannot shield the RF signal at this time, and the RF signal will form oscillations between the first metal structure and the second metal structure, and then radiate out through the first metal structure, thereby achieving output of the RF signal; if the RF signal is a pulse signal, the waveform selection structure can shield the RF signal at this time, and the RF signal cannot form oscillations between the first metal structure and the second metal structure, and the first metal structure cannot radiate the RF signal, thereby achieving shielding of the RF signal.

[0007] The waveform selection antenna further includes a first dielectric substrate and a second dielectric substrate. Both the first dielectric substrate and the second dielectric substrate are rectangular parallelepiped structures. The length of the first dielectric substrate is defined as the left-right direction, the width as the front-back direction, and the thickness as the top-bottom direction. The length of the second dielectric substrate is defined as the left-right direction, the width as the front-back direction, and the thickness as the top-bottom direction. The length of the first dielectric substrate is equal to its width. The first dielectric substrate is disposed above the second dielectric substrate. The lower surface of the first dielectric substrate is in contact with the upper surface of the second dielectric substrate. The front end surface of the first dielectric substrate and the front end surface of the second dielectric substrate are coplanar. The rear end surface of the first dielectric substrate and the rear end surface of the second dielectric substrate are coplanar. The left end surface of the first dielectric substrate and the left end surface of the second dielectric substrate are coplanar. The right end surface of the first dielectric substrate and the right end surface of the second dielectric substrate are coplanar. The first metal structure is disposed on the upper surface of the first dielectric substrate, the second metal structure is disposed on the upper surface of the second dielectric substrate, and the waveform selection structure is disposed on the lower surface of the second dielectric substrate.

[0008] The first metal structure includes a first metal block attached to the upper surface of the first dielectric substrate. The first metal block is rectangular, with a length direction along the left-right direction and a width direction along the front-back direction. The width of the first metal block is smaller than the width of the first dielectric substrate. The front end face of the first metal block is in the same plane as the front end face of the first dielectric substrate, the right end face of the first metal block is in the same plane as the right end face of the first dielectric substrate, and the left end face of the first metal block is in the same plane as the left end face of the first dielectric substrate. The first metal block is provided with a first opening, and the upper surface of the first dielectric substrate is exposed at the first opening. The outer edge of the first opening is surrounded by four arc-shaped edges connected end to end in sequence. The four arc-shaped edges are distributed in the front, back, left and right directions. The arc-shaped edge on the front side is called the first arc-shaped edge, the arc-shaped edge on the rear side is called the second arc-shaped edge, the arc-shaped edge on the left side is called the third arc-shaped edge, and the arc-shaped edge on the right side is called the fourth arc-shaped edge. The first arcuate side protrudes toward the rear, the second arcuate side protrudes toward the front, the third arcuate side protrudes toward the left, and the fourth arcuate side protrudes toward the right. The plane that makes the first dielectric substrate bilaterally symmetrical is called a first plane, and the plane that makes the first dielectric substrate front-to-back symmetrical is called a second plane. The first plane makes the first arcuate side bilaterally symmetrical, the first arcuate side and the second arcuate side are front-to-back symmetrical about the second plane, the second plane makes the third arcuate side front-to-back symmetrical, and the third arcuate side and the fourth arcuate side are front-to-back symmetrical about the first plane. If the second plane is translated forward a certain distance, it will be tangent to the first arcuate side. If the second plane is translated backward a certain distance, it will be tangent to the second arcuate side. If the left end surface of the first dielectric substrate is translated right a certain distance, it will be tangent to the third arcuate side. If the right end surface of the first dielectric substrate is translated left a certain distance, it will be tangent to the fourth arcuate side.

[0009] The second metal structure includes a second metal block, a third metal block and a fourth metal block. The second metal block, the third metal block and the fourth metal block are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. Three downwardly concave rectangular grooves are opened on the upper surface of the second dielectric substrate. The three rectangular grooves all extend forward from the rear end surface of the second dielectric substrate. The three rectangular grooves are respectively referred to as the first groove, the second groove and the third groove. The second metal block is embedded in the first groove to fill it, the third metal block is embedded in the second groove to fill it, and the third metal block is embedded in the third groove to fill it. The rear ends of the second metal block, the third metal block and the fourth metal block are all located in the same plane as the rear end surface of the second dielectric substrate. The second metal block, the third metal block and the fourth metal block are all located in the same plane as the rear end surface of the second dielectric substrate. The upper end surfaces of the third metal block and the fourth metal block are both in contact with the upper end surface of the second dielectric substrate, the left end of the second metal block is located to the right of the left end surface of the second dielectric substrate, the front end of the second metal block is located on the second plane, the third metal block is located to the right of the second metal block, and there is a distance between the left end of the third metal block and the right end of the second metal block. The first plane makes the third metal block bilaterally symmetrical, the front end of the third metal block is located in front of the second plane, and when the third metal block and the first opening are vertically mapped to the same plane, the front end of the third metal block falls on the front side area of ​​the first opening, the fourth metal block is located to the right of the third metal block, and the second metal block and the fourth metal block are bilaterally symmetrical about the first plane.

[0010] The waveform selection structure includes a fifth metal block, a sixth metal block, a seventh metal block and a filter circuit. The fifth metal block, the sixth metal block and the seventh metal block are all attached to the lower end surface of the second dielectric substrate. The fifth metal block, the sixth metal block and the seventh metal block are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. The rear ends of the fifth metal block, the sixth metal block and the seventh metal block are located in the same straight line, which is located in front of the plane where the rear end surface of the second dielectric substrate is located. The front ends of the fifth metal block, the sixth metal block and the seventh metal block are located in the same straight line, which is located in front of the plane where the rear end surface of the second dielectric substrate is located. The left end of the fifth metal block is located on the right side of the plane where the left end surface of the second dielectric substrate is located, and the distance between the left end of the fifth metal block and the plane where the left end surface of the second dielectric substrate is located is smaller than the distance between the left end of the second metal block and the plane where the left end surface of the first dielectric substrate is located. The sixth metal block is located on the right side of the fifth metal block, and there is a distance between the left end of the sixth metal block and the right end of the fifth metal block. The first plane makes the sixth metal block bilaterally symmetrical. The seventh metal block is located on the right side of the sixth metal block. The fifth metal block and the seventh metal block are symmetrical with respect to the first metal block. A plane is bilaterally symmetrical. If the second metal block, the third metal block, the fifth metal block and the sixth metal block are vertically mapped to the same plane, the left end of the sixth metal block will coincide with the left end of the third metal block, the right end of the sixth metal block will coincide with the right end of the third metal block, and the right end of the fifth metal block will be located between the left and right ends of the second metal block; the filtering circuit includes two filtering modules, which are respectively referred to as a first filtering module and a second filtering module. The first filtering module is arranged between the fifth metal block and the sixth metal block. The first filtering module includes a first diode, a second diode, a third diode, a fourth diode, and a fifth diode. a diode, a first capacitor, and a first resistor, the first diode, the second diode, the third diode, and the fourth diode are all Schottky diodes, the anode of the first diode is connected to the fifth metal block, the cathode of the first diode, one end of the first capacitor, one end of the first resistor, and the cathode of the second diode are connected, the anode of the second diode is connected to the sixth metal block, the cathode of the third diode is connected to the fifth metal block, the anode of the third diode, the other end of the first capacitor, the other end of the first resistor, and the anode of the fourth diode are connected, and the cathode of the fourth diode is connected to the sixth metal block;The second filtering module includes a fifth diode, a sixth diode, a seventh diode, an eighth diode, a second capacitor, and a second resistor. The fifth diode, the sixth diode, the seventh diode, and the eighth diode are all Schottky diodes. The anode of the fifth diode is connected to the sixth metal block, the cathode of the fifth diode, one end of the second capacitor, one end of the second resistor, and the cathode of the sixth diode are connected. The anode of the sixth diode is connected to the seventh metal block, the cathode of the seventh diode is connected to the sixth metal block, the anode of the seventh diode, the other end of the second capacitor, the other end of the second resistor, and the anode of the eighth diode are connected. The cathode of the eighth diode is connected to the seventh metal block.

[0011] The first dielectric substrate is provided with a first metallized through hole and two groups of metallized through holes. The first metallized through hole is a cylindrical hole that passes through the first dielectric substrate from top to bottom. The straight line where the axis of the first metallized through hole is located is located in front of the first arc-shaped edge. The distance between the straight line where the axis of the first metallized through hole is located and any point on the first arc-shaped edge is greater than the radius of the first metallized through hole. The upper end of the first metallized through hole is in contact with the lower end of the first metal block, and the lower end of the first metallized through hole is in contact with the upper end of the third metal block. The two groups of metallized through holes are respectively referred to as the first group of metallized through holes. and a second group of metallized through holes; the first group of metallized through holes includes a plurality of metallized through holes penetrating the first dielectric substrate from top to bottom, the plurality of metallized through holes are cylindrical holes, and the diameters are the same as the diameter of the first metallized through hole, the plurality of metallized through holes are evenly spaced from front to back, the axes of the plurality of metallized through holes are located in the same plane, and the plane is parallel to the first plane, and the plane is referred to as the third plane, the third plane is located to the left of the straight line where the right end of the second metal block is located, and the distance between the two is greater than the radius of the metallized through hole, the third plane is located to the right of the straight line where the right end of the fifth metal block is located, and the distance between the two is greater than the radius of the metallized through hole. The radius of the hole, the upper ends of multiple metallized through holes are in contact with the lower end of the first metal block, and the lower ends of multiple metallized through holes are in contact with the lower end of the second metal layer. Among the first group of metallized through holes, the frontmost metallized through hole is located on the rear side of the second arc-shaped edge, and the distance between the straight line where the axis of the metallized through hole is located and any point on the second arc-shaped edge is greater than the radius of the metallized through hole, the straight line where the axis of the rearmost metallized through hole is located is located in front of the straight line where the front end of the fifth metal block is located, and the distance between the two is greater than the radius of the metallized through hole; the first group of metallized through holes and the second group of metallized through holes are about the first A plane is bilaterally symmetrical; the second dielectric substrate is provided with a second metallized through hole, a third metallized through hole, and a fourth metallized through hole extending from top to bottom, wherein the upper end of the second metallized through hole is in affixed state with the lower end of the second metal block, the upper end of the third metallized through hole is in affixed state with the lower end of the third metal block, the upper end of the fourth metallized through hole is in affixed state with the lower end of the fourth metal block, the lower end of the second metallized through hole is in affixed state with the upper end of the fifth metal block, the lower end of the third metallized through hole is in affixed state with the upper end of the sixth metal block, and the lower end of the fourth metallized through hole is in affixed state with the upper end of the seventh metal block;The second, third, and fourth plated through holes have the same diameter and their axes lie in the same plane, referred to as the fourth plane. The fourth plane is located between the rear end of the first metal block and the plane where the rear end of the first dielectric body is located. The distance between the fourth plane and the rear end of the first metal block is greater than the radius of the second plated through hole, and the distance between the fourth plane and the plane where the rear end of the first dielectric body is located is greater than the radius of the second plated through hole.

[0012] The feeding structure includes a coaxial feeding line, which is used to feed radio frequency signals into the second metal block, the third metal block and the fourth metal block, and to receive electromagnetic waves transmitted by the second metal block, the third metal block and the fourth metal block.

[0013] The width of the first dielectric substrate and the second dielectric substrate are both 60 mm, the length of the first dielectric substrate and the second dielectric substrate are both 60 mm, the thickness of the first dielectric substrate and the second dielectric substrate are both 0.8 mm, the length of the first metal block is 60 mm, the width is 59.5 mm, and the thickness is 0.018 mm. The radius of the first arc side is 29.8 mm, and the arc center angle is 61.2 degrees. The radius of the third arc side is 30 mm, and the arc center angle is 117 degrees. The length of the second metal block is 30mm, width 1.8mm, thickness 0.018mm, the third metal block is 32mm long, 2mm wide, and 0.018mm thick, the fourth metal block is 30mm long, 1.8mm wide, and 0.018mm thick, the distance between the left end of the second metal block and the plane where the left end surface of the second dielectric substrate is located is 27mm, the distance between the right end of the second metal block and the left end of the third metal block is 0.2mm, the length of the fifth metal block is 6.9mm, and the fifth metal block is 1.8mm long, 1.8mm wide, and 0.018mm thick. The width of the metal block is 1.5 mm, the thickness of the fifth metal block is 0.018 mm, the length of the sixth metal block is 6.9 mm, the width of the sixth metal block is 2 mm, the thickness of the sixth metal block is 0.018 mm, the length of the seventh metal block is 6.9 mm, the width of the seventh metal block is 1.5 mm, the thickness of the seventh metal block is 0.018 mm, and the distance between the straight line where the rear ends of the fifth metal block, the sixth metal block and the seventh metal block are located and the plane where the rear end surface of the second dielectric substrate is located is 0.018 mm. The distance between the left end of the fifth metal block and the plane on which the left end surface of the second dielectric substrate lies is 0.1 mm. The distance between the left end of the fifth metal block and the plane on which the left end surface of the second dielectric substrate lies is 25.9 mm. The distance between the right end of the fifth metal block and the left end of the sixth metal block is 1.6 mm. The diameters of the first metallized through hole, the second metallized through hole, the third metallized through hole, and the fourth metallized through hole are all 0.2 mm. The first group of metallized through holes includes 55 metallized through holes. In the first group of metallized through holes, the center-to-center distance between two adjacent metallized through holes is 0.4 mm.

[0014] Compared with the prior art, the advantage of the present invention is that a waveform selection antenna is formed by a first metal structure, a second metal structure, a waveform selection structure and a feeding structure. When an electromagnetic wave in free space is radiated onto the first metal structure, if the electromagnetic wave is a continuous signal, the waveform selection structure cannot shield the electromagnetic wave. The electromagnetic wave will form an oscillation between the first metal structure and the second metal structure, and then be transmitted to the feeding structure through the second metal structure, thereby realizing the reception of external electromagnetic waves. If the electromagnetic wave is a pulse signal, the waveform selection structure can shield the electromagnetic wave. The electromagnetic wave will not form an oscillation between the first metal structure and the second metal structure, and the second metal structure cannot transmit the electromagnetic wave to the feeding structure, thereby realizing the shielding of external electromagnetic waves. When the feeding structure is a pulse signal, the waveform selection structure can shield the electromagnetic wave. The electromagnetic wave will not form an oscillation between the first metal structure and the second metal structure, and the second metal structure cannot transmit the electromagnetic wave to the feeding structure, thereby realizing the shielding of external electromagnetic waves. When the electrical structure feeds the RF signal into the second metal structure, if the RF signal is a continuous signal, the waveform selection structure cannot shield the RF signal at this time, and the RF signal will form an oscillation between the first metal structure and the second metal structure, and then radiate through the first metal structure to achieve the output of the RF signal; if the RF signal is a pulse signal, the waveform selection structure can shield the RF signal at this time, and the RF signal cannot form an oscillation between the first metal structure and the second metal structure, and the first metal structure cannot radiate the RF signal, thereby achieving the shielding of the RF signal. Therefore, the present invention integrates the waveform selection plane structure and the antenna structure, and has both the functions of the waveform selection plane structure and the antenna. When used in a wireless communication system, its structural complexity can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A perspective view of an antenna selected for the waveform of the present invention;

[0016] Figure 2 A perspective view of an antenna selected for the waveform of the present invention;

[0017] Figure 3 A schematic diagram of a first metal structure for a waveform selection antenna of the present invention;

[0018] Figure 4 A top view of a first dielectric plate of the waveform selection antenna of the present invention;

[0019] Figure 5 A top view of a second dielectric plate of the waveform selection antenna of the present invention;

[0020] Figure 6 A schematic structural diagram of a waveform selection structure of a waveform selection antenna of the present invention;

[0021] Figure 7 Figure 2 is a simulation result diagram of the waveform selection antenna of the present invention. DETAILED DESCRIPTION

[0022] The present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0023] Embodiment 1: A waveform selection antenna comprises a first metal structure, a second metal structure, a waveform selection structure and a feeding structure, wherein the first metal structure is connected to the second metal structure, and the second metal structure is connected to the waveform selection structure. The first metal structure is realized by forming a dipole structure with an internal circular loop and a truncated end by opening a gap on a metal patch structure, and the second metal structure is realized by a microstrip line structure. When an electromagnetic wave in free space is radiated onto the first metal structure, if the electromagnetic wave is a continuous signal, the waveform selection structure cannot shield the electromagnetic wave. The electromagnetic wave will oscillate between the first metal structure and the second metal structure, and then be transmitted to the feeding structure through the second metal structure to realize the reception of external electromagnetic waves. If the electromagnetic wave is a pulse signal, the waveform selection structure cannot shield the electromagnetic wave. The structure can shield the electromagnetic wave, and the electromagnetic wave will not form oscillations between the first metal structure and the second metal structure. The second metal structure cannot transmit the electromagnetic wave to the feeding structure, thereby achieving shielding of external electromagnetic waves; when the feeding structure feeds the RF signal into the second metal structure, if the RF signal is a continuous signal, the waveform selection structure cannot shield the RF signal at this time, and the RF signal will form oscillations between the first metal structure and the second metal structure, and then radiate out through the first metal structure to achieve the output of the RF signal; if the RF signal is a pulse signal, the waveform selection structure can shield the RF signal at this time, and the RF signal cannot form oscillations between the first metal structure and the second metal structure, and the first metal structure cannot radiate the RF signal, thereby achieving shielding of the RF signal.

[0024] In this embodiment, the waveform selection antenna integrates the waveform selection plane structure and the antenna structure, and has both the functions of the waveform selection plane structure and the antenna. When used in a wireless communication system, its structural complexity can be reduced.

[0025] Example 2: This example is basically the same as Example 1, except that: in this example, Figures 1 to 6As shown, a waveform selection antenna also includes a first dielectric substrate 1 and a second dielectric substrate 2. The first dielectric substrate 1 and the second dielectric substrate 2 are both rectangular parallelepiped structures. The length direction of the first dielectric substrate 1 is the left-right direction, the width direction is the front-back direction, and the thickness direction is the top-bottom direction. The length direction of the second dielectric substrate 2 is along the left-right direction, the width direction is along the front-back direction, and the thickness direction is along the top-bottom direction. The length of the first dielectric substrate 1 is equal to its width. The first dielectric substrate 1 is disposed above the second dielectric substrate 2. The lower surface of the first dielectric substrate 1 is in contact with the upper surface of the second dielectric substrate 2. The front end surface of the first dielectric substrate 1 and the front end surface of the second dielectric substrate 2 are coplanar. The rear end surface of the first dielectric substrate 1 and the rear end surface of the second dielectric substrate 2 are coplanar. The left end surface of the first dielectric substrate 1 and the left end surface of the second dielectric substrate 2 are coplanar. The right end surface of the first dielectric substrate 1 and the right end surface of the second dielectric substrate 2 are coplanar. The first metal structure is disposed on the upper surface of the first dielectric substrate 1, the second metal structure is disposed on the upper surface of the second dielectric substrate 2, and the waveform selection structure is disposed on the lower surface of the second dielectric substrate 2.

[0026] In this embodiment, the first metal structure includes a first metal block 3 attached to the upper surface of the first dielectric substrate 1. The first metal block 3 is rectangular, with a length direction of the first metal block 3 along the left-right direction and a width direction along the front-back direction. The width of the first metal block 3 is smaller than the width of the first dielectric substrate 1. The front end surface of the first metal block 3 is located in the same plane as the front end surface of the first dielectric substrate 1, the right end surface of the first metal block 3 is located in the same plane as the right end surface of the first dielectric substrate 1, and the left end surface of the first metal block 3 is located in the same plane as the left end surface of the first dielectric substrate 1. A first opening 4 is provided on the first metal block 3, and the upper surface of the first dielectric substrate 1 is exposed at the first opening 4. The outer edge of the first opening 4 is surrounded by four arc-shaped edges connected end to end in sequence. The four arc-shaped edges are distributed in the front, back, left and right directions. The arc-shaped edge on the front side is called the first arc-shaped edge 5, the arc-shaped edge on the rear side is called the second arc-shaped edge 6, the arc-shaped edge on the left side is called the third arc-shaped edge 7, and the arc-shaped edge on the right side is called the The arcuate side is called the fourth arcuate side 8, the first arcuate side 5 is convex to the rear side, the second arcuate side 6 is convex to the front side, the third arcuate side 7 is convex to the left side, and the fourth arcuate side 8 is convex to the right side. The plane that makes the first dielectric substrate 1 bilaterally symmetrical is called the first plane, and the plane that makes the first dielectric substrate 1 front-to-back symmetrical is called the second plane. The first plane makes the first arcuate side 5 bilaterally symmetrical, the first arcuate side 5 and the second arcuate side 6 are front-to-back symmetrical about the second plane, and the second plane makes the third arcuate side 5 bilaterally symmetrical. The arcuate edge 7 is symmetrical front-to-back, and the third arcuate edge 7 and the fourth arcuate edge 8 are symmetrical front-to-back about the first plane. If the second plane is translated forward a certain distance, it will be tangent to the first arcuate edge 5. If the second plane is translated backward a certain distance, it will be tangent to the second arcuate edge 6. If the left end surface of the first dielectric substrate 1 is translated to the right a certain distance, it will be tangent to the third arcuate edge 7. If the right end surface of the first dielectric substrate 1 is translated to the left a certain distance, it will be tangent to the fourth arcuate edge 8.

[0027] In this embodiment, the second metal structure includes a second metal block 9, a third metal block 10, and a fourth metal block 11. The second metal block 9, the third metal block 10, and the fourth metal block 11 are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. Three downwardly concave rectangular grooves are opened on the upper surface of the second dielectric substrate 2. The three rectangular grooves all extend forward from the rear end surface of the second dielectric substrate 2. The three rectangular grooves are respectively referred to as the first groove, the second groove, and the third groove. The second metal block 9 is embedded in the first groove to fill it, the third metal block 10 is embedded in the second groove to fill it, and the third metal block 10 is embedded in the third groove to fill it. The rear ends of the second metal block 9, the third metal block 10, and the fourth metal block 11 are all located in the same plane as the rear end surface of the second dielectric substrate 2. The upper end surfaces of the second metal block 9, the third metal block 10, and the fourth metal block 11 are all in contact with the upper end surface of the second dielectric substrate 2. The left end of the second metal block 9 is located to the right of the left end surface of the second dielectric substrate 2. The front end of the second metal block 9 is located on the second plane. The third metal block 10 is located to the right of the second metal block 9. There is a distance between the left end of the third metal block 10 and the right end of the second metal block 9. The first plane makes the third metal block 10 bilaterally symmetrical. The front end of the third metal block 10 is located in front of the second plane. When the third metal block 10 and the first opening 4 are vertically mapped to the same plane, the front end of the third metal block 10 falls in the front area of ​​the first opening 4. The fourth metal block 11 is located to the right of the third metal block 10. The second metal block 9 and the fourth metal block 11 are bilaterally symmetrical about the first plane.

[0028] In this embodiment, the first metal structure converts the continuous RF signal fed by the copper shaft into an electromagnetic wave signal and radiates it. Simultaneously, the first metal structure also serves as a receiving structure, receiving continuous electromagnetic signals from free space. The second metal structure is connected to the feeding structure for inputting RF signals and is connected to the first metal structure via first plated vias 15, 16, and 17 for signal oscillation.

[0029] In this embodiment, the waveform selection structure includes a fifth metal block 12, a sixth metal block 13, a seventh metal block 14 and a filter circuit. The fifth metal block 12, the sixth metal block 13 and the seventh metal block 14 are all attached to the lower end surface of the second dielectric substrate 2. The fifth metal block 12, the sixth metal block 13 and the seventh metal block 14 are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. The rear ends of the fifth metal block 12, the sixth metal block 13 and the seventh metal block 14 are located on the same straight line, which is located in front of the plane where the rear end surface of the second dielectric substrate 2 is located. The front ends of the fifth metal block 12, the sixth metal block 13 and the seventh metal block 14 are located on the same straight line. The fifth metal block 12 is located on the rear side of the second plane and has a distance from the second plane. The left end of the fifth metal block 12 is located on the right side of the plane where the left end surface of the second dielectric substrate 2 is located, and the distance between the left end of the fifth metal block 12 and the plane where the left end surface of the second dielectric substrate 2 is located is smaller than the distance between the left end of the second metal block 9 and the plane where the left end surface of the first dielectric substrate 1 is located. The sixth metal block 13 is located on the right side of the fifth metal block 12. There is a distance between the left end of the sixth metal block 13 and the right end of the fifth metal block 12. The first plane makes the sixth metal block 13 bilaterally symmetrical. The seventh metal block 14 is located on the right side of the sixth metal block 13. The fifth metal block 12 and the seventh metal block 14 are symmetrical with respect to the first plane. It is bilaterally symmetrical. If the second metal block 9, the third metal block 10, the fifth metal block 12 and the sixth metal block 13 are vertically mapped to the same plane, the left end of the sixth metal block 13 will coincide with the left end of the third metal block 10, the right end of the sixth metal block 13 will coincide with the right end of the third metal block 10, and the right end of the fifth metal block 12 will be located between the left and right ends of the second metal block 9; the filtering circuit includes two filtering modules, which are respectively referred to as the first filtering module and the second filtering module. The first filtering module is arranged between the fifth metal block 12 and the sixth metal block 13. The first filtering module includes a first diode D1, a second diode D2, a third diode D3, and a fourth diode D 4. The first capacitor C1 and the first resistor R1, the first diode D1, the second diode D2, the third diode D3, and the fourth diode D4 are all Schottky diodes. The anode of the first diode D1 is connected to the fifth metal block 12, the cathode of the first diode D1, one end of the first capacitor C1, one end of the first resistor R1, and the cathode of the second diode D2 are connected, the anode of the second diode D2 is connected to the sixth metal block 13, the cathode of the third diode D3 is connected to the fifth metal block 12, the anode of the third diode D3, the other end of the first capacitor C1, the other end of the first resistor R1, and the anode of the fourth diode D4 are connected, and the cathode of the fourth diode D4 is connected to the sixth metal block 13;The second filtering module includes a fifth diode D5, a sixth diode D6, a seventh diode D7, an eighth diode D8, a second capacitor C2, and a second resistor R2. The fifth diode D5, the sixth diode D6, the seventh diode D7, and the eighth diode D8 are all Schottky diodes. The anode of the fifth diode D5 is connected to the sixth metal block 13, the cathode of the fifth diode D5, one end of the second capacitor C2, one end of the second resistor R2, and the cathode of the sixth diode D6 are connected, the anode of the sixth diode D6 is connected to the seventh metal block 14, the cathode of the seventh diode D7 is connected to the sixth metal block 13, the anode of the seventh diode D7, the other end of the second capacitor C2, the other end of the second resistor R2, and the anode of the eighth diode D8 are connected, and the cathode of the eighth diode D8 is connected to the seventh metal block 14.

[0030] In this embodiment, when the electromagnetic wave in free space is radiated onto the first metal structure, if the electromagnetic wave is a continuous signal, the waveform selection structure cannot shield the electromagnetic wave. The electromagnetic wave will form an oscillation between the first metal structure and the second metal structure. At this time, all the diodes of the first filter module and the second aluminum filter block will be turned on, and the capacitors of the first filter module and the second filter module will be saturated and become a high impedance state in a short time. The electrical signal cannot enter the capacitor, so the structure can continue to receive and radiate signals; similarly, if the electromagnetic wave is a pulse signal, the waveform selection structure can shield the electromagnetic wave. At this time, all the diodes of the first filter module and the second aluminum filter block will be turned on, and the capacitors of the first filter module and the second filter module will be saturated within the time of one pulse and consumed in the first resistor R1 and the second resistor R2 respectively to ensure that the capacitor is in an unsaturated state before the next pulse arrives. Therefore, the structure can realize the shielding function.

[0031] In this embodiment, the first dielectric substrate 1 is provided with a first metallized through hole 15 and two groups of metallized through holes. The first metallized through hole 15 is a cylindrical hole that penetrates the first dielectric substrate 1 from top to bottom. The straight line where the axis of the first metallized through hole 15 is located is located in front of the first arc-shaped edge 5. The distance between the straight line where the axis of the first metallized through hole 15 is located and any point on the first arc-shaped edge 5 is greater than the radius of the first metallized through hole 15. The upper end of the first metallized through hole 15 is in contact with the lower end of the first metal block 3, and the lower end of the first metallized through hole 15 is in contact with the upper end of the third metal block 10. The two groups of metallized through holes are respectively referred to as the first group of metallized through holes and the third group of metallized through holes. The first group of metallized through holes 16 includes a plurality of metallized through holes that penetrate the first dielectric substrate 1 from top to bottom. The plurality of metallized through holes are cylindrical holes, and the diameters are the same as the diameter of the first metallized through hole 15. The plurality of metallized through holes are evenly spaced from front to back. The axes of the plurality of metallized through holes are located in the same plane, and the plane is parallel to the first plane. The plane is referred to as the third plane. The third plane is located to the left of the straight line on which the right end of the second metal block 9 is located, and the distance between the two is greater than the radius of the metallized through hole. The third plane is located to the right of the straight line on which the right end of the fifth metal block 12 is located, and the distance between the two is greater than the radius of the metallized through hole. The radius of the metallized through-holes is shown in FIG1 , and the upper ends of the plurality of metallized through-holes are in contact with the lower end of the first metal block 3, and the lower ends of the plurality of metallized through-holes are in contact with the lower end of the second metal layer. In the first group of metallized through-holes 16, the frontmost metallized through-hole is located on the rear side of the second arc-shaped edge, and the distance between the straight line where the axis of the metallized through-hole is located and any point on the second arc-shaped edge is greater than the radius of the metallized through-hole. The straight line where the axis of the rearmost metallized through-hole is located is located in front of the straight line where the front end of the fifth metal block 12 is located, and the distance between the two is greater than the radius of the metallized through-hole. The first group of metallized through-holes 16 and the second group of metallized through-holes 17 are left-facing with respect to the first plane. Right symmetric; the second dielectric substrate 2 is provided with a second metallized through-hole 18, a third metallized through-hole 19, and a fourth metallized through-hole 20 running from top to bottom. The upper end of the second metallized through-hole 18 is in contact with the lower end of the second metal block 9, the upper end of the third metallized through-hole 19 is in contact with the lower end of the third metal block 10, the upper end of the fourth metallized through-hole 20 is in contact with the lower end of the fourth metal block 11, the lower end of the second metallized through-hole 18 is in contact with the upper end of the fifth metal block 12, the lower end of the third metallized through-hole 19 is in contact with the upper end of the sixth metal block 13, and the lower end of the fourth metallized through-hole 20 is in contact with the upper end of the seventh metal block 14.The second, third, and fourth plated through-holes 18, 19, and 20 have the same diameter and their axes lie in the same plane, referred to as the fourth plane. The fourth plane is located between the rear end of the first metal block 3 and the plane where the rear end of the first dielectric body is located. The distance between the fourth plane and the rear end of the first metal block 3 is greater than the radius of the second plated through-hole 18, and the distance between the fourth plane and the plane where the rear end of the first dielectric body is located is greater than the radius of the second plated through-hole 18.

[0032] In this embodiment, the first metallized through-hole 15, the first group of metallized through-holes 16 and the second group of metallized through-holes 17 connect the first metal structure and the second metal structure to realize a metal loop between the first metal structure and the second metal structure to form an oscillation; the second metallized through-hole 18, the third metallized through-hole 19 and the fourth metallized through-hole 20 connect the second metal structure and the third metal structure to realize the waveform selection function.

[0033] In this embodiment, the width of the first dielectric substrate 1 and the second dielectric substrate 2 are both 60 mm, the length of the first dielectric substrate 1 and the second dielectric substrate 2 are both 60 mm, the thickness of the first dielectric substrate 1 and the second dielectric substrate 2 are both 0.8 mm, the length of the first metal block 3 is 60 mm, the width is 59.5 mm, and the thickness is 0.018 mm. The radius of the first arc-shaped edge 5 is 29.8 mm, and the arc center angle is 61.2 degrees. The radius of the third arc-shaped edge 7 is 30 mm, and the arc center angle is 117 degrees. The length of the second metal block 9 is 30 mm. mm, width 1.8 mm, thickness 0.018 mm, the third metal block 10 has a length of 32 mm, a width of 2 mm, and a thickness of 0.018 mm, the fourth metal block 11 has a length of 30 mm, a width of 1.8 mm, and a thickness of 0.018 mm, the distance between the left end of the second metal block 9 and the plane where the left end surface of the second dielectric substrate 2 is located is 27 mm, the distance between the right end of the second metal block 9 and the left end of the third metal block 10 is 0.2 mm, the length of the fifth metal block 12 is 6.9 mm, and the fifth metal block 1 2 has a width of 1.5 mm, the thickness of the fifth metal block 12 is 0.018 mm, the length of the sixth metal block 13 is 6.9 mm, the width of the sixth metal block 13 is 2 mm, the thickness of the sixth metal block 13 is 0.018 mm, the length of the seventh metal block 14 is 6.9 mm, the width of the seventh metal block 14 is 1.5 mm, the thickness of the seventh metal block 14 is 0.018 mm, and the distance between the straight line where the rear ends of the fifth metal block 12, the sixth metal block 13 and the seventh metal block 14 are located and the plane where the rear end surface of the second dielectric substrate 2 is located is 0.018 mm. The distance between the left end of the fifth metal block 12 and the plane on which the left end surface of the second dielectric substrate 2 lies is 0.1 mm. The distance between the left end of the fifth metal block 12 and the plane on which the left end surface of the second dielectric substrate 2 lies is 25.9 mm. The distance between the right end of the fifth metal block 12 and the left end of the sixth metal block 13 is 1.6 mm. The diameters of the first metallized through-hole 15, the second metallized through-hole 18, the third metallized through-hole 19, and the fourth metallized through-hole 20 are all 0.2 mm. The first group of metallized through-holes 16 includes 55 metallized through-holes. In the first group of metallized through-holes 16, the center-to-center distance between two adjacent metallized through-holes is 0.4 mm.

[0034] Example 3: This example is basically the same as Example 1, except that: in this example, the feeding structure includes a coaxial feeding line 21, which is used to feed the radio frequency signal into the second metal block 9, the third metal block 10 and the fourth metal block 11, and to receive the electromagnetic waves transmitted by the second metal block 9, the third metal block 10 and the fourth metal block 11.

[0035] In order to verify the performance of the waveform selection antenna of the present invention, the waveform selection antenna of the present invention is modeled and simulated in CST. The simulation results are as follows: Figure 7 As shown, analysis Figure 7It can be seen that the waveform selection antenna of the present invention successfully achieves the performance of receiving and radiating continuous waves and shielding pulse waves, which proves the feasibility of the waveform selection antenna.

Claims

1. A waveform selection antenna, characterized in that The present invention comprises a first metal structure, a second metal structure, a waveform selection structure and a feeding structure, wherein the first metal structure is connected to the second metal structure, and the second metal structure is connected to the waveform selection structure. The first metal structure is realized by forming a dipole structure with an internal circular loop and a truncated end by opening a gap on a metal patch structure, and the second metal structure is realized by adopting a microstrip line structure. When an electromagnetic wave in free space is radiated onto the first metal structure, if the electromagnetic wave is a continuous signal, the waveform selection structure cannot shield the electromagnetic wave. The electromagnetic wave will oscillate between the first metal structure and the second metal structure, and then be transmitted to the feeding structure through the second metal structure to realize reception of external electromagnetic waves. If the electromagnetic wave is a pulse signal, the waveform selection structure can shield the electromagnetic wave. The electromagnetic wave will not oscillate between the first metal structure and the second metal structure, and the second metal structure cannot transmit the electromagnetic wave to the feeding structure, thereby realizing shielding of external electromagnetic waves. When the feeding structure feeds the radio frequency signal into the second metal structure, if the radio frequency signal is a continuous signal, the waveform selection structure cannot shield the radio frequency signal, and the radio frequency signal will oscillate between the first metal structure and the second metal structure, and then radiate through the first metal structure to achieve the output of the radio frequency signal; if the radio frequency signal is a pulse signal, the waveform selection structure can shield the radio frequency signal, and the radio frequency signal cannot oscillate between the first metal structure and the second metal structure, and the first metal structure cannot radiate the radio frequency signal, thereby achieving the shielding of the radio frequency signal; The waveform selection antenna further includes a first dielectric substrate and a second dielectric substrate. Both the first dielectric substrate and the second dielectric substrate are rectangular parallelepiped structures. The length direction of the first dielectric substrate is the left-right direction, the width direction is the front-back direction, and the thickness direction is the top-bottom direction. The length direction of the second dielectric substrate is the left-right direction, the width direction is the front-back direction, and the thickness direction is the top-bottom direction. The length of the first dielectric substrate is equal to its width. The first dielectric substrate is disposed above the second dielectric substrate. The lower surface of the first dielectric substrate is in contact with the upper surface of the second dielectric substrate. The front end surface of the first dielectric substrate and the front end surface of the second dielectric substrate are coplanar. The rear end surface of the first dielectric substrate and the rear end surface of the second dielectric substrate are coplanar. The left end surface of the first dielectric substrate and the left end surface of the second dielectric substrate are coplanar. The right end surface of the first dielectric substrate and the right end surface of the second dielectric substrate are coplanar. The first metal structure is disposed on the upper surface of the first dielectric substrate, and the second metal structure is disposed on the upper surface of the second dielectric substrate. The waveform selection structure is disposed on the lower surface of the second dielectric substrate.

2. A waveform selection antenna according to claim 1, characterized in that The first metal structure includes a first metal block attached to the upper surface of the first dielectric substrate. The first metal block is rectangular, with a length direction of the first metal block along the left-right direction and a width direction along the front-back direction. The width of the first metal block is smaller than the width of the first dielectric substrate. A front end surface of the first metal block is coplanar with the front end surface of the first dielectric substrate, a right end surface of the first metal block is coplanar with the right end surface of the first dielectric substrate, and a left end surface of the first metal block is coplanar with the left end surface of the first dielectric substrate. The first metal block is provided with a first opening, and the upper surface of the first dielectric substrate is exposed at the first opening. The outer edge of the first opening is formed by four arcuate edges connected end to end in sequence. The four arcuate edges are distributed in front, back, left and right directions. The arcuate edge on the front side is referred to as the first arcuate edge, the arcuate edge on the rear side is referred to as the second arcuate edge, the arcuate edge on the left side is referred to as the third arcuate edge, and the arcuate edge on the right side is referred to as the fourth arcuate edge. The first arcuate edge protrudes toward the rear, the second arcuate edge protrudes toward the front, the third arcuate edge protrudes toward the left, and the fourth arcuate edge protrudes toward the right. The plane that makes the first dielectric substrate bilaterally symmetrical is referred to as a first plane, and the plane that makes the first dielectric substrate front-to-back symmetrical is referred to as a second plane. The first plane makes the first arcuate edge bilaterally symmetrical, the first arcuate edge and the second arcuate edge are front-to-back symmetrical about the second plane, the second plane makes the third arcuate edge front-to-back symmetrical, and the third arcuate edge and the fourth arcuate edge are front-to-back symmetrical about the first plane. If the second plane is translated forward a certain distance, it will be tangent to the first arcuate edge. If the second plane is translated backward a certain distance, it will be tangent to the second arcuate edge. If the left end surface of the first dielectric substrate is translated right a certain distance, it will be tangent to the third arcuate edge. If the right end surface of the first dielectric substrate is translated left a certain distance, it will be tangent to the fourth arcuate edge.

3. A waveform selection antenna according to claim 2, characterized in that The second metal structure includes a second metal block, a third metal block and a fourth metal block. The second metal block, the third metal block and the fourth metal block are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. Three downwardly concave rectangular grooves are opened on the upper surface of the second dielectric substrate. The three rectangular grooves all extend forward from the rear end surface of the second dielectric substrate. The three rectangular grooves are respectively referred to as the first groove, the second groove and the third groove. The second metal block is embedded in the first groove to fill it, the third metal block is embedded in the second groove to fill it, and the fourth metal block is embedded in the third groove to fill it. The rear ends of the second metal block, the third metal block and the fourth metal block are all located in the same plane as the rear end surface of the second dielectric substrate. The second metal block The upper end surfaces of the third metal block and the fourth metal block are both in contact with the upper end surface of the second dielectric substrate. The left end of the second metal block is located to the right of the left end surface of the second dielectric substrate. The front end of the second metal block is located on the second plane. The third metal block is located to the right of the second metal block. There is a distance between the left end of the third metal block and the right end of the second metal block. The first plane makes the third metal block bilaterally symmetrical. The front end of the third metal block is located in front of the second plane. When the third metal block and the first opening are vertically mapped to the same plane, the front end of the third metal block falls in the front area of ​​the first opening. The fourth metal block is located to the right of the third metal block. The second and fourth metal blocks are bilaterally symmetrical about the first plane.

4. A waveform selection antenna according to claim 3, characterized in that The waveform selection structure includes a fifth metal block, a sixth metal block, a seventh metal block and a filter circuit. The fifth metal block, the sixth metal block and the seventh metal block are all attached to the lower end surface of the second dielectric substrate. The fifth metal block, the sixth metal block and the seventh metal block are all rectangular, and their length directions are all along the front-to-back direction, and their width directions are all along the left-to-right direction. The rear ends of the fifth metal block, the sixth metal block and the seventh metal block are located in the same straight line, which is located in front of the plane where the rear end surface of the second dielectric substrate is located. The front ends of the fifth metal block, the sixth metal block and the seventh metal block are located in the same straight line, which is located in front of the plane where the rear end surface of the second dielectric substrate is located. The left end of the fifth metal block is located on the right side of the plane where the left end surface of the second dielectric substrate is located, and there is a distance between it and the second plane. The left end of the fifth metal block is located on the right side of the plane where the left end surface of the second dielectric substrate is located, and the distance between the left end of the fifth metal block and the plane where the left end surface of the second dielectric substrate is located is smaller than the distance between the left end of the second metal block and the plane where the left end surface of the first dielectric substrate is located. The sixth metal block is located on the right side of the fifth metal block, and there is a distance between the left end of the sixth metal block and the right end of the fifth metal block. The first plane makes the sixth metal block bilaterally symmetrical. The seventh metal block is located on the right side of the sixth metal block. The fifth metal block and the seventh metal block are symmetrical with respect to the The first plane is bilaterally symmetrical. If the second metal block, the third metal block, the fifth metal block and the sixth metal block are vertically mapped to the same plane, the left end of the sixth metal block will coincide with the left end of the third metal block, the right end of the sixth metal block will coincide with the right end of the third metal block, and the right end of the fifth metal block will be located between the left and right ends of the second metal block. The filtering circuit includes two filtering modules, which are respectively referred to as a first filtering module and a second filtering module. The first filtering module is arranged between the fifth metal block and the sixth metal block. The first filtering module includes a first diode, a second diode, a third diode, a fourth diode, a first capacitor, and a first resistor, wherein the first diode, the second diode, the third diode, and the fourth diode are all Schottky diodes, the anode of the first diode is connected to the fifth metal block, the cathode of the first diode, one end of the first capacitor, one end of the first resistor, and the cathode of the second diode are connected, the anode of the second diode is connected to the sixth metal block, the cathode of the third diode is connected to the fifth metal block, the anode of the third diode, the other end of the first capacitor, the other end of the first resistor, and the anode of the fourth diode are connected, and the cathode of the fourth diode is connected to the sixth metal block; The second filtering module includes a fifth diode, a sixth diode, a seventh diode, an eighth diode, a second capacitor and a second resistor. The fifth diode, the sixth diode, the seventh diode and the eighth diode are all Schottky diodes. The anode of the fifth diode is connected to the sixth metal block, the cathode of the fifth diode, one end of the second capacitor, one end of the second resistor and the cathode of the sixth diode are connected, the anode of the sixth diode is connected to the seventh metal block, the cathode of the seventh diode is connected to the sixth metal block, the anode of the seventh diode, the other end of the second capacitor, the other end of the second resistor and the anode of the eighth diode are connected, and the cathode of the eighth diode is connected to the seventh metal block.

5. A waveform selection antenna according to claim 4, characterized in that The first dielectric substrate is provided with a first metallized through hole and two groups of metallized through holes. The first metallized through hole is a cylindrical hole that passes through the first dielectric substrate from top to bottom. The straight line where the axis of the first metallized through hole is located is located in front of the first arc-shaped edge. The distance between the straight line where the axis of the first metallized through hole is located and any point on the first arc-shaped edge is greater than the radius of the first metallized through hole. The upper end of the first metallized through hole is in contact with the lower end of the first metal block, and the lower end of the first metallized through hole is in contact with the upper end of the third metal block. The two groups of metallized through holes are respectively referred to as the first group of metallized through holes and the third group of metallized through holes. Two groups of metallized through holes; the first group of metallized through holes includes a plurality of metallized through holes that penetrate the first dielectric substrate from top to bottom, the plurality of metallized through holes are cylindrical holes, and the diameters are the same as the diameter of the first metallized through hole, the plurality of metallized through holes are evenly spaced from front to back, the axes of the plurality of metallized through holes are located in the same plane, and the plane is parallel to the first plane, and the plane is referred to as the third plane, the third plane is located to the left of the straight line on which the right end of the second metal block is located, and the distance between the two is greater than the radius of the metallized through hole, the third plane is located to the right of the straight line on which the right end of the fifth metal block is located, and the distance between the two is greater than the radius of the metallized through hole The radius of the metallized through-holes is 200°, the upper ends of the plurality of metallized through-holes are in contact with the lower end of the first metal block, and the lower ends of the plurality of metallized through-holes are in contact with the upper end of the second metal block. Among the first group of metallized through-holes, the frontmost metallized through-hole is located on the rear side of the second arc-shaped edge, and the distance between the straight line where the axis of the metallized through-hole is located and any point on the second arc-shaped edge is greater than the radius of the metallized through-hole. The straight line where the axis of the rearmost metallized through-hole is located is located in front of the straight line where the front end of the fifth metal block is located, and the distance between the two is greater than the radius of the metallized through-hole. The first group of metallized through-holes and the second group of metallized through-holes are about the The first plane is bilaterally symmetrical; the second dielectric substrate is provided with a second metallized through-hole, a third metallized through-hole, and a fourth metallized through-hole extending from top to bottom; the upper end of the second metallized through-hole is in abutment with the lower end of the second metal block, the upper end of the third metallized through-hole is in abutment with the lower end of the third metal block, the upper end of the fourth metallized through-hole is in abutment with the lower end of the fourth metal block, the lower end of the second metallized through-hole is in abutment with the upper end of the fifth metal block, the lower end of the third metallized through-hole is in abutment with the upper end of the sixth metal block, and the lower end of the fourth metallized through-hole is in abutment with the upper end of the seventh metal block;The second, third, and fourth plated through holes have the same diameter and their axes lie in the same plane, referred to as a fourth plane. The fourth plane is located between the rear end of the first metal block and the plane containing the rear end of the first dielectric substrate. The distance between the fourth plane and the rear end of the first metal block is greater than the radius of the second plated through hole, and the distance between the fourth plane and the plane containing the rear end of the first dielectric substrate is greater than the radius of the second plated through hole.

6. A waveform selection antenna according to claim 5, characterized in that The feeding structure includes a coaxial feeding line, which is used to feed radio frequency signals into the second metal block, the third metal block and the fourth metal block, and to receive electromagnetic waves transmitted by the second metal block, the third metal block and the fourth metal block.

7. The waveform selection antenna according to claim 5, characterized in that The width of the first dielectric substrate and the second dielectric substrate are both 60 mm, the length of the first dielectric substrate and the second dielectric substrate are both 60 mm, the thickness of the first dielectric substrate and the second dielectric substrate are both 0.8 mm, the length of the first metal block is 60 mm, the width is 59.5 mm, and the thickness is 0.018 mm. The radius of the first arc side is 29.8 mm, and the arc center angle is 61.2 degrees. The radius of the third arc side is 30 mm, and the arc center angle is 117 degrees. The length of the second metal block is 30mm, width 1.8mm, thickness 0.018mm, the third metal block is 32mm long, 2mm wide, and 0.018mm thick, the fourth metal block is 30mm long, 1.8mm wide, and 0.018mm thick, the distance between the left end of the second metal block and the plane where the left end surface of the second dielectric substrate is located is 27mm, the distance between the right end of the second metal block and the left end of the third metal block is 0.2mm, the length of the fifth metal block is 6.9mm, the The width of the fifth metal block is 1.5 mm, the thickness of the fifth metal block is 0.018 mm, the length of the sixth metal block is 6.9 mm, the width of the sixth metal block is 2 mm, the thickness of the sixth metal block is 0.018 mm, the length of the seventh metal block is 6.9 mm, the width of the seventh metal block is 1.5 mm, the thickness of the seventh metal block is 0.018 mm, and the distance between the straight line where the rear ends of the fifth metal block, the sixth metal block, and the seventh metal block are located and the plane where the rear end surface of the second dielectric substrate is located is 0.018 mm. The distance between the left end of the fifth metal block and the plane on which the left end surface of the second dielectric substrate lies is 0.1 mm. The distance between the left end of the fifth metal block and the plane on which the left end surface of the second dielectric substrate lies is 25.9 mm. The distance between the right end of the fifth metal block and the left end of the sixth metal block is 1.6 mm. The diameters of the first, second, third, and fourth metallized through holes are all 0.2 mm. The first group of metallized through holes includes 55 metallized through holes. In the first group of metallized through holes, the center-to-center distance between two adjacent metallized through holes is 0.4 mm.

Images