Display device

Abstract

The invention discloses a display device which comprises a driving substrate, a light-emitting chip located on the driving substrate and a color conversion substrate arranged opposite to the driving substrate. The color conversion substrate comprises a base material and an imprinting layer, the imprinting layer comprises a plurality of accommodating units which are sunken towards one side of the base material; one accommodating unit is correspondingly arranged on the light-emitting side of one light-emitting chip; the color conversion layer is located in a part of the containing units. The thickness of the color conversion layer at each position is not completely equal, so that the color conversion layer can adapt to the luminous intensity of emergent light of the luminous chip, and the problem of halo is avoided. The thickness of the color conversion layer is relatively small at the position where the intensity of the emergent light of the light-emitting chip is large, and the thickness of the color conversion layer is large at the position where the intensity of the emergent light of the light-emitting chip is small, so that the color conversion layer has high light conversion efficiency at each position, and the emergent light is uniform.

Description

A display device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent applications filed on May 9, 2022, with application number 202221176254.5; and filed on May 9, 2022, with application number 202221104053.4, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of display technology, and in particular to a display device. Background Art

[0004] Light-emitting diodes (LEDs) are considered the ideal form of future display technology due to their high brightness, fast response, and high stability. To achieve pixel-level display, LED chips can be miniaturized, using Mini LEDs (Mini Light Emitting Diodes, Mini LEDs) or Micro LEDs (Micro LEDs) as light-emitting devices.

[0005] Currently, full-color Micro LED displays achieve this by stimulating a color conversion layer with blue Micro LEDs. This approach circumvents the issues of low three-color transfer yield and inconsistent red, green, and blue (RGB) efficiency. Currently, color conversion layers are primarily fabricated using photolithography or inkjet printing. Both methods produce planar color conversion units, but the luminous intensity distribution of Micro LEDs is uneven. This uneven light intensity distribution can lead to incomplete conversion of parts of the color conversion layer, resulting in haloing.

[0006] Summary of the Invention

[0007] According to an embodiment of the present application, a display device includes: a driving substrate for providing a driving signal; a light-emitting chip located on the driving substrate and electrically connected to the driving substrate; a color conversion substrate arranged opposite to the driving substrate; the color conversion substrate includes: a base material arranged opposite to the driving substrate; a stamped layer located on the side of the base material facing the driving substrate; the stamped layer includes a plurality of accommodating units recessed toward one side of the base material; one accommodating unit is correspondingly provided on the light-emitting side of a light-emitting chip; a color conversion layer is located in part of the accommodating units; the color conversion layer is used to emit light of other colors under the excitation of the output light of the light-emitting chip; the thickness of the color conversion layer at each position is not completely equal. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] FIG1A is a schematic structural diagram of a display device in the related art;

[0009] FIG1B is a schematic structural diagram of another display device in the related art;

[0010] FIG2A is a schematic diagram of a structure of a display device according to an embodiment of the present application;

[0011] FIG2B is a schematic diagram of another structure of a display device according to an embodiment of the present application;

[0012] FIG3A is a schematic diagram of a cross-sectional structure of an imprinting layer of a display device according to an embodiment of the present application;

[0013] FIG3B is a schematic diagram of a cross-sectional structure of an imprinted layer of another display device according to an embodiment of the present application;

[0014] FIG4A is a schematic diagram of a planar structure of an imprinting layer of a display device according to an embodiment of the present application;

[0015] FIG4B is a schematic diagram of a planar structure of an imprinted layer of another display device according to an embodiment of the present application;

[0016] 5a-5b are schematic structural diagrams showing a process of manufacturing an imprinted layer of a display device according to an embodiment of the present application;

[0017] FIG5 c is a structural diagram illustrating a process of manufacturing an imprinted layer of another display device according to an embodiment of the present application;

[0018] FIG6 is a schematic diagram of a planar structure of a driving substrate according to an embodiment of the present application;

[0019] FIG7 is a schematic diagram of a cross-sectional structure of a light-emitting chip according to an embodiment of the present application;

[0020] FIG8A is a second structural schematic diagram of a display device according to an embodiment of the present application;

[0021] FIG8B is a second structural schematic diagram of another display device according to an embodiment of the present application;

[0022] 9a-9n are schematic structural diagrams showing a process of manufacturing a color conversion layer and a scattering layer of a display device according to an embodiment of the present application;

[0023] FIG10 is a schematic diagram showing a structure of a receiving unit of a display device according to an embodiment of the present application;

[0024] FIG11 is a second structural schematic diagram of a receiving unit of a display device according to an embodiment of the present application;

[0025] FIG12 is a third structural schematic diagram of a receiving unit of a display device according to an embodiment of the present application;

[0026] FIG13 is a third structural schematic diagram of a display device according to an embodiment of the present application;

[0027] FIG14 is a schematic structural diagram of a Bragg reflector according to an embodiment of the present application;

[0028] FIG15 is a schematic structural diagram of a resonant cavity according to an embodiment of the present application;

[0029] 16a-16n are schematic structural diagrams showing a process of manufacturing a color conversion layer and a scattering layer of another display device according to an embodiment of the present application;

[0030] FIG17 is a partially enlarged schematic diagram of a color conversion layer of another display device according to an embodiment of the present application;

[0031] FIG18 is a third structural diagram of another display device according to an embodiment of the present application;

[0032] FIG19 is a fourth structural schematic diagram of another display device according to an embodiment of the present application.

[0033] Among them, 1-driving substrate, 2-light-emitting chip, 3-color conversion substrate, 4-filter layer, 5-isolation layer, 21-n-type doping layer, 22-light-emitting layer, 23-p-type doping layer, 24-insulating layer, 25-electrode, 31-substrate, 32-color conversion layer, 32r-red conversion layer, 32g-green conversion layer, 33-embossing layer, 34-scattering layer, 32r'-red conversion material, 32g'-green conversion material, 33'-embossing glue, 34'-scattering material, 41- First dielectric layer, 42-second dielectric layer, 43-dielectric layer, M-imprinting mold, Mr-first mold, Mg-second mold, Mb-third mold, Mr'-fourth mold, Mg'-fifth mold, Mb'-sixth mold, M1-mold, S-accommodating unit, Sr-first accommodating unit, Sg-second accommodating unit, Sb-third accommodating unit, Sr'-fourth accommodating unit, Sg'-fifth accommodating unit, Sb'-sixth accommodating unit, h-microstructure, d-light-shielding retaining wall. DETAILED DESCRIPTION

[0034] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application will be further described below with reference to the accompanying drawings and examples. However, the example embodiments can be implemented in various forms and should not be understood as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided to make the present application more comprehensive and complete, and to fully convey the concepts of the example embodiments to those skilled in the art. The same figure marks in the figures represent the same or similar structures, and their repeated descriptions will be omitted. The words expressing position and direction described in this application are all explained using the accompanying drawings as examples, but changes can be made as needed, and all changes are included in the scope of protection of this application. The drawings in this application are only used to illustrate relative position relationships and do not represent true proportions.

[0035] Light emitting diode (LED) display technology refers to a display technology that uses light emitting diodes as display devices. In order to achieve pixel-level display, the LED chip can be miniaturized and Mini LED (Mini Light Emitting Diode, Mini LED) or Micro LED (Micro Light Emitting Diode, Micro LED) can be used as the light emitting device. Among them, the size of Mini LED is larger than that of Micro LED. Generally, the size of Mini LED is less than 500μm, and the size of Micro LED is less than 100μm. In specific implementation, the light emitting chip of the corresponding size can be used according to the pixel resolution requirements, which is not limited here.

[0036] Micro LEDs inherit the high efficiency, high brightness, high reliability, and fast response time of traditional light-emitting diodes. They also feature self-luminescence, eliminating the need for a backlight, and offer advantages such as energy saving, simplified structure, small size, and thinness. Consequently, direct display technology using Micro LEDs has seen significant development. Therefore, Micro LEDs have broad application prospects in public displays, TVs, automotive displays, commercial displays, and mobile phones, making them a key future display technology.

[0037] The full-color display solution of Micro LED display devices can be achieved through color conversion, three-primary color method, optical prism synthesis method, and by controlling the structure and size of the light-emitting chip to emit different wavelengths of light. Among them, the use of color conversion materials for color conversion is considered to be one of the most promising methods.

[0038] Using color conversion materials for color conversion can circumvent the issues of low three-color transfer yield and inconsistent red, green, and blue (RGB) efficiency. Currently, color conversion layers are primarily fabricated using photolithography or inkjet printing. Both methods produce planar color conversion units. Analyzing LED light emission characteristics, the uneven intensity distribution of LEDs, which follow a Lambertian distribution, can lead to incomplete conversion in parts of the color conversion layer, resulting in haloing.

[0039] Figure 1A is a schematic diagram of the structure of a display device in the related art. Figure 1B is a schematic diagram of the structure of another display device in the related art.

[0040] As shown in Figures 1A and 1B, the display device includes a driver substrate 1, a light-emitting chip 2, and a color conversion substrate 3. The color conversion substrate comprises a base material 31 and a color conversion layer 32 located on the base material's surface. In Figure 1B, a light-shielding barrier d is provided between the color conversion substrate 3 and the driver substrate 1 to reduce crosstalk between sub-pixels caused by the distance between the color conversion substrate 3 and the driver substrate 1, thereby improving the contrast and color rendering capabilities of the display device.

[0041] As can be seen from Figures 1A and 1B, the color conversion layer 32 is usually set to a plane with uniform thickness at all positions. However, when the light-emitting chip adopts an LED chip, the LED chip is a Lambertian light source, and the luminous intensity at each position is related to the light emission angle, which is the angle between the light emission direction and the normal. The luminous intensity is the highest when the emission angle is 0 degrees, and the luminous intensity decreases as the emission angle increases. Since the color conversion layer 32 is a plane, the small-angle light emitted by the light-emitting chip 2 can fully excite the color conversion layer 32 due to its high luminous intensity; while the large-angle light emitted by the light-emitting chip 2 cannot fully excite the color conversion layer 32, resulting in different excitation efficiencies of the color conversion layer 32 at the center and edge positions, and the halo problem caused by insufficient conversion at the edge position.

[0042] In view of this, a display device according to an embodiment of the present application can improve the halo problem caused by insufficient conversion of the color conversion layer.

[0043] Figure 2A is a schematic diagram of the structure of a display device according to an embodiment of the present application. Figure 2B is a schematic diagram of the structure of another display device according to an embodiment of the present application. It should be noted that the structure of the display device shown in Figure 2A corresponds to that of Figure 1A, and the structure of the other display device shown in Figure 2A corresponds to that of Figure 1B.

[0044] As shown in FIG. 2A-FIG . 2B , the display device according to the embodiment of the present application includes: a driving substrate 1 , a light-emitting chip 2 , and a color conversion substrate 3 .

[0045] The driving substrate 1 is located at the bottom of the display device. Usually, its size is adapted to the overall size of the display device, and the size of the driving substrate 1 is slightly smaller than the size of the display device.

[0046] In some embodiments, the display device may include multiple drive substrates 1, which are spliced ​​together to provide a driving signal. To avoid optical problems caused by splicing drive substrates 1, the seams between adjacent drive substrates 1 are minimized, or even seamless.

[0047] The shape of the driving substrate 1 is the same as the overall shape of the display device, and can generally be set to a rectangular or square shape. When the display device is a special-shaped display device, the shape of the driving substrate can be adaptively set to other shapes, which is not limited here.

[0048] The driving substrate 1 is used to provide a driving signal. Typically, the driving substrate 1 can be a circuit board or an array substrate.

[0049] The circuit board may be a printed circuit board (PCB). When applied to a flexible display, a flexible printed circuit (FPC) may be used, which is not limited here.

[0050] The array substrate can be fabricated using thin film technology to form a thin film transistor (TFT) array on the substrate, which is used to drive the light-emitting chip. In practice, multiple TFT structures can be fabricated on the substrate through deposition and etching, thereby enabling active driving of the light-emitting chip.

[0051] The light emitting chip 2 is located on the driving substrate 1 and is electrically connected to the driving substrate 1. In the embodiment of the present application, the light emitting chip 2 is used to emit monochromatic light, and is combined with the color conversion substrate 3 to achieve full-color display.

[0052] In some embodiments, the light-emitting chip 2 can be a micro-LED chip, which can be a Mini LED chip or a Micro LED chip. Both the Mini LED chip and the Micro LED chip can be sized in the micron or sub-millimeter range, with the Mini LED chip being larger than the Micro LED chip. In different application scenarios with varying pixel-level requirements, either a Mini LED chip or a Micro LED chip can be used as sub-pixels, depending on the implementation.

[0053] When the light-emitting chip 2 is a Mini LED chip or a Micro LED chip, the light-emitting chip 2 and the driver substrate 1 are typically manufactured separately. If the light-emitting chip 2 is a Mini LED chip, after the Mini LED chip and driver substrate 1 are manufactured, the Mini LED chip and driver substrate 1 are bonded together using die bonding technology. If the light-emitting chip 2 is a Micro LED chip, after the Micro LED chip and driver substrate 1 are manufactured, the Micro LED chip is transferred to the driver substrate 1 using mass transfer technology and bonded to the driver substrate 1.

[0054] In some embodiments, the light emitting chip 2 may also be other types of light emitting chips, and the intensity distribution of the emitted light may be different from that of the LED chip, which is not limited here.

[0055] The color conversion substrate 3 is disposed opposite to the driving substrate 1 , and the color conversion substrate 3 is located on the light emitting side of the light emitting chip 2 .

[0056] The size of the color conversion substrate 3 is adapted to the overall size of the display device, and is slightly smaller than the size of the display device. The size of the color conversion substrate 3 is comparable to that of the drive substrate 1 .

[0057] The shape of the color conversion substrate 3 is the same as the overall shape of the display device, and can generally be set to a rectangular or square shape. When the display device is a special-shaped display device, the shape of the driving substrate can be adaptively set to other shapes, which is not limited here.

[0058] As shown in Figures 2A and 2B, the color conversion substrate 3 includes a base material 31, an embossing layer 33, and a color conversion layer 32. It should be noted that the shapes of the color conversion layer 32 shown in Figures 2A and 2B are different.

[0059] The substrate 31 is disposed opposite to the driving substrate 1. The size of the substrate 31 is adapted to the overall size of the display device, and is slightly smaller than the size of the display device.

[0060] The shape of the substrate 31 is the same as the overall shape of the display device. Typically, the substrate 31 can be set to be rectangular or square, which is not limited here.

[0061] The substrate 31 has supporting and bearing functions, and can usually be made of glass or organic materials, which is not limited here.

[0062] Figure 3A is a schematic diagram of the cross-sectional structure of an imprinted layer of a display device according to an embodiment of the present application, and Figure 4A is a schematic diagram of the planar structure of an imprinted layer of a display device according to an embodiment of the present application; Figure 3B is a schematic diagram of the cross-sectional structure of an imprinted layer of another display device according to an embodiment of the present application, and Figure 4B is a schematic diagram of the planar structure of an imprinted layer of another display device according to an embodiment of the present application.

[0063] As shown in FIG. 3A , FIG. 3B , FIG. 4A and FIG. 4B , the embossing layer 33 is located on a side of the substrate 31 facing the drive substrate 1 , and the embossing layer 33 includes a plurality of accommodation units S recessed toward one side of the substrate 31 .

[0064] Figures 5a-5b illustrate the structure of a display device during the fabrication of an embossing layer according to an embodiment of the present application. In a specific implementation, as shown in Figure 5a , a layer of embossing adhesive 33' can be evenly coated on the surface of a substrate 31. Then, as shown in Figure 5b , a first embossing mold M is used to emboss the embossing adhesive 33', thereby forming the receiving unit S shown in Figure 3A .

[0065] Figure 5c is a schematic diagram illustrating the structure of another display device during the fabrication process of a compression layer according to an embodiment of the present application. In a specific implementation, as shown in Figure 5a , a layer of embossing adhesive 33' can be evenly coated on the surface of a substrate 31. Then, as shown in Figure 5c , a second embossing mold M' is used to emboss the embossing adhesive 33', thereby forming the receiving unit S shown in Figure 3B .

[0066] Among them, the embossing glue can be a light-curing glue or a heat-curing glue. When light-curing glue is used, the embossing glue is cured by ultraviolet light after the embossing is completed to form an embossing layer 33; when heat-curing glue is used, the embossing glue is cured by heating after the embossing is completed to form an embossing layer 33. There is no limitation here.

[0067] FIG6 is a schematic diagram of a planar structure of a driving substrate according to an embodiment of the present application.

[0068] As shown in Figures 4A, 4B and 6, the light-emitting chips 2 on the driving substrate 1 are arranged in an array, and correspondingly, the accommodating units S on the imprinted layer 33 are arranged in an array. One accommodating unit S is correspondingly provided on the light-emitting side of one light-emitting chip 2. After the driving substrate 1 and the color conversion substrate 3 are arranged relative to each other, the structure shown in Figures 2A and 2B can be obtained.

[0069] In the embodiment of the present application, the light emitting chip 2 is used to emit blue light. In some embodiments, the light emitting chip 2 can be a blue Mini LED chip or a blue Micro LED chip.

[0070] FIG7 is a schematic diagram of a cross-sectional structure of a light-emitting chip according to an embodiment of the present application.

[0071] As shown in FIG7 , when the light-emitting chip adopts a Mini LED chip or a blue light Micro LED chip, it may specifically include: an n-type doped layer 21 , a light-emitting layer 22 , a p-type doped layer 23 , an insulating layer 24 and an electrode 25 .

[0072] The n-type doped layer 21, the light emitting layer 22 and the p-type doped layer 23 are stacked and grown on a suitable substrate using LED epitaxial growth technology. The n-type doped layer 21 and the p-type doped layer 23 can be made of GaN material by n-doping and p-doping respectively.

[0073] The light-emitting layer 22 and the p-type doped layer 23 expose portions of the n-type doped layer 21 to form electrodes. Before forming the electrodes, an insulating layer 24 is formed on the exposed surfaces of the n-type doped layer 21 and the p-type doped layer 23. The insulating layer 24 protects the non-electrode area from the external environment and prevents short circuits between the electrodes. The insulating layer 24 can be made of one or more materials selected from SiO2, AlN, Al2O3, and AlON, and can be fabricated by atomic layer deposition or plasma chemical vapor deposition.

[0074] The insulating layer 24 includes two through-holes that expose a portion of the n-type doped layer 21 and a portion of the p-type doped layer 23, respectively. Two electrodes 25 contact the exposed n-type doped layer 21 and p-type doped layer 23, respectively, through the two through-holes. The electrode connected to the n-type doped layer 21 is an n-electrode, and the electrode connected to the p-type doped layer 23 is a p-electrode. The n-electrode can be made of Ti / Al / Ni / Au metal, and the p-electrode can be made of Ni / Au metal. The materials used to make the electrodes include, but are not limited to, Cr, Ti, Ni, Au, Sn, Al, Au, Pt, and other metals, or combinations thereof.

[0075] The two electrodes of the light emitting chip 2 are welded to the corresponding pads on the driving substrate 1 , thereby achieving electrical connection between the driving substrate 1 and the light emitting chip 2 .

[0076] 2A and 2B , in order to achieve full-color display, the embodiment of the present application sets a color conversion layer 32 in part of the receiving unit S. The color conversion layer 32 is used to emit light of other colors under the stimulation of the light emitted by the light emitting chip 2 .

[0077] Specifically, when the light-emitting chip 2 emits blue light, the color conversion layer 32 includes a red conversion layer 32r and a green conversion layer 32g. The red conversion layer 32r emits red light when stimulated by blue light, while the green conversion layer 32g emits green light when stimulated by blue light. Some light-emitting chips 2 also directly emit blue light, thus forming the three primary colors of light that form a color image.

[0078] In the embodiment of the present application, the color conversion layer 32 can be made of quantum dot material. Quantum dot materials have a high color gamut, and the wavelength of light emitted by the quantum dot material is determined by the composition and particle size of the quantum dots. In specific implementations, the quantum dot material can be selected from at least one of zinc sulfide, zinc oxide, gallium nitride, zinc selenide, cadmium sulfide, gallium selenide, cadmium selenide, zinc telluride, cadmium telluride, gallium arsenide, indium phosphide, lead telluride, and perovskite quantum dots, without limitation. In addition, the color conversion layer can also be made of other materials with similar functions, such as fluorescent materials, without limitation.

[0079] Since the light-emitting chip 2 is mostly a Mini LED chip or a Micro LED chip, its luminous intensity satisfies the Lambertian distribution. Therefore, in the embodiment of the present application, the thickness of the color conversion layer 32 is not completely equal at each position. This can adapt to the luminous intensity of the light emitted by the light-emitting chip 2, thereby avoiding the problem of halo. Specifically, referring to Figure 2A, the thickness of the color conversion layer 32 is relatively small at locations where the intensity of the light emitted by the light-emitting chip 2 is high, while the thickness of the color conversion layer 32 is large at locations where the intensity of the light emitted by the light-emitting chip 2 is low. This ensures that the color conversion layer 32 has a high light conversion efficiency at all positions, thereby making the emitted light uniform.

[0080] In some embodiments, since the light-emitting chip 2 utilizes a Mini LED chip or a Micro LED chip, its luminous intensity satisfies a Lambertian distribution. Therefore, in the embodiments of the present application, as shown in Figures 2A and 2B , the thickness of the color conversion layer 32 at the center is less than that at the edge. Since the luminous intensity of the low-angle light emitted by the light-emitting chip 2 is greater, the color conversion layer 32 can be fully excited in the central region corresponding to the thinner thickness of the color conversion layer 32. In contrast, the luminous intensity of the high-angle light emitted by the light-emitting chip 2 is less, corresponding to the thicker edge regions of the color conversion layer 32. This further improves the excitation efficiency of the color conversion layer 32 in the edge regions, ensuring that the excitation efficiency of the color conversion layer is comparable at all locations, thus avoiding haloing caused by insufficient conversion at the edge.

[0081] Figure 8A is a second schematic diagram of the structure of a display device according to an embodiment of the present application. Figure 8B is a second schematic diagram of the structure of another display device according to an embodiment of the present application.

[0082] As shown in Figures 8A and 8B , the color conversion substrate 3 further includes a scattering layer 34. Scattering layer 34 is located in the housing unit S where the color conversion layer 32 is not located. The function of scattering layer 34 is to scatter the blue light emitted by the light-emitting chip, thereby forming a light emission pattern similar to that of the excitation light after passing through the color conversion layer 32.

[0083] The scattering layer 34 typically comprises a transparent matrix and diffusing particles dispersed within the matrix. The diffusing particles scatter the incident blue light in all directions, forming a uniform outgoing beam. The transparent matrix can be made of materials such as PMMA, PC, PS, and PP, and the diffusing particles can be made of scattering particles such as TiO2, without limitation.

[0084] Thus, the red conversion layer 32r, green conversion layer 32g, and scattering layer 34 are repeatedly arranged in a predetermined sequence within the receiving unit S. The light-emitting chip 2 excites the red conversion layer 32r to emit red light as a red sub-pixel, the light-emitting chip 2 excites the green conversion layer 32g to emit green light as a green sub-pixel, and the light-emitting chip 2 emits blue light through the scattering layer 34 as a blue sub-pixel. A red conversion layer 32r and its corresponding light-emitting chip 2, a green conversion layer 32g and its corresponding light-emitting chip 2, and a scattering layer 34 and its corresponding light-emitting chip 2 constitute a pixel unit. By controlling the ratio of the different colors of light within each pixel unit, full-color display can be achieved.

[0085] In some embodiments, as shown in FIG3A , the depth of each receiving unit S formed by embossing is equal at all locations, and the shape of the receiving unit S is generally the same as that of the first imprinting mold. The color conversion layer is formed in the receiving unit S, and the surface in contact with the receiving unit S generally has the same shape as the receiving unit S. The receiving unit S is generally rectangular or square, and using a simple pattern for embossing is beneficial for improving the yield of the formed receiving units S.

[0086] When the light-emitting chip 2 is an LED chip, the light intensity distribution satisfies the Lambertian distribution, so the thickness of the color conversion layer 32 at the center is less than the thickness at the edge. As shown in Figures 2A and 8A, the surface of the accommodating unit S facing the light-emitting chip 2 is rectangular, so that the surface of the color conversion layer 32 in contact with the accommodating unit S, that is, the surface of the color conversion layer 32 facing the light-emitting chip 2, is also rectangular. In order to make the thickness of the color conversion layer 32 at the center less than the thickness at the edge, as shown in Figures 2A and 8A, the surface of the color conversion layer 32 facing the light-emitting chip 2 can be set to an arc shape. The arc-shaped color conversion layer 32 can wrap around the light-emitting chip 2, so that the large-angle light emitted by the light-emitting chip 2 can also excite the color conversion layer 32 to perform color conversion, thereby improving the conversion efficiency of the color conversion layer.

[0087] The scattering layer 34 is usually configured to have the same shape as the color conversion layer 32 . As shown in FIG8A , the surface of the scattering layer 34 facing away from the light emitting chip 2 is rectangular, and the surface of the scattering layer 34 facing the light emitting chip 2 is arc-shaped.

[0088] In specific implementations, the shapes of the color conversion layer 32 and the scattering layer 34 can be produced by embossing. In this embodiment of the present application, the method for producing the color conversion layer 32 and the scattering layer 34 is specifically described by taking the light-emitting chip 2 as a blue Mini LED or blue Micro LED, and the color conversion layer 32 and the scattering layer 34 both adopting the structure shown in FIG. 8A as an example.

[0089] 9a-9n are schematic structural diagrams of a color conversion layer and a scattering layer of a display device during the manufacturing process according to an embodiment of the present application.

[0090] As shown in Figure 9a , a layer of embossing adhesive 33' is formed on the surface of substrate 31 and embossed using a first mold Mr to form a plurality of first receiving units Sr, as shown in Figure 9b . Next, as shown in Figure 9c , red conversion material 32r' is formed on the surface of embossing adhesive 33'. The red conversion material 32r' is then filled into the first receiving units Sr. As shown in Figure 9d , excess red conversion material 32r' outside the first receiving units Sr is scraped off.

[0091] As shown in Figure 9e, the second mold Mg is used to emboss the embossing adhesive 33', forming a plurality of second receiving units Sg as shown in Figure 9f. Next, as shown in Figure 9g, a green conversion material 32g' is formed on the surface of the embossing adhesive 33', filling the second receiving units Sg with the green conversion material 32g'. As shown in Figure 9h, the excess green conversion material 32g' outside the second receiving units Sg is scraped off.

[0092] As shown in Figure 9i, the third mold Mb is then used to emboss the embossed adhesive 33', forming a plurality of third receiving units Sb as shown in Figure 9j. Next, as shown in Figure 9k, scattering material 34' is formed on the surface of the embossed adhesive 33', filling the third receiving units Sb with the scattering material 34'. As shown in Figure 9l, the excess scattering material 34' outside the third receiving units Sb is scraped off.

[0093] As shown in FIG9m , the red conversion material 32r', green conversion material 32g', and scattering material 34' formed in the receiving unit are then embossed using a mold M1, thereby forming the shapes of the color conversion layer 32 and scattering layer 34 shown in FIG9n . The thickness of the color conversion layer 32 and scattering layer 34 at their centers is thinner than at their edges.

[0094] In some embodiments, the light intensity distribution of the light-emitting chip 2 may be such that the intensity of light at small angles is low, while the intensity of light at large angles is high. Using such a light-emitting chip 2 can enhance the light intensity at the edges of sub-pixels, making the emitted light relatively uniform across the entire sub-pixel. This can be achieved through optical design of the light-emitting side of the LED chip. For example, the light-emitting side of the light-emitting chip 2 can be coated to act as a lens, thereby changing the light intensity distribution of the light-emitting chip 2.

[0095] Figure 10 is one of the structural schematic diagrams of a accommodating unit of a display device according to an embodiment of the present application, Figure 11 is a second structural schematic diagram of a accommodating unit of a display device according to an embodiment of the present application, and Figure 12 is a third structural schematic diagram of a accommodating unit of a display device according to an embodiment of the present application.

[0096] For the light-emitting chip 2 of the above-mentioned properties, as shown in Figures 10 to 12, the depth of the accommodating unit S at the center position is greater than the depth of the accommodating unit S at the edge position, so that when the color conversion material or scattering material is filled in the accommodating unit S, it can form a shape in which the thickness at the center position is greater than the thickness at the edge position, thereby adapting to the light intensity distribution of the above-mentioned light-emitting chip 2.

[0097] In a specific implementation, as shown in FIG10 , the surface of the accommodating unit S facing the light-emitting chip 2 can be configured as an arc; as shown in FIG11 , the surface of the accommodating unit S facing the light-emitting chip 2 can be configured as a cone; as shown in FIG12 , the surface of the accommodating unit S facing the light-emitting chip 2 can be configured as a truncated cone. In addition, the surface of the accommodating unit S facing the light-emitting chip 2 can also be configured as a pyramid, a truncated pyramid, etc., which are not limited here.

[0098] The color conversion layer 32 or the scattering layer 34 is filled in the corresponding accommodating unit S, so that the surface of the color conversion layer 32 or the scattering layer 34 facing away from the light-emitting chip 2 has the same shape as the corresponding accommodating unit, and the surface of the color conversion layer 32 or the scattering layer 34 facing the light-emitting chip 2 can be flat, and the surface of the color conversion layer or the scattering layer 34 facing the light-emitting chip 2 is flush with the surface of the printed layer 33 facing the light-emitting chip 2 at other positions except the accommodating unit S.

[0099] In practice, a similar embossing method as shown in Figures 9a-9l can be used to form the various shapes of the receiving unit S, color conversion layer 32, and scattering layer 34. This differs from the aforementioned method in that, each time the color conversion material and scattering material are filled, only the area outside the receiving unit needs to be scraped off to maintain a flat surface, eliminating the need for a subsequent embossing step. Of course, if the surface of the color conversion layer and scattering layer facing the light-emitting chip 2 requires design, further embossing can also be performed, though this is not a limitation here.

[0100] FIG13 is a third structural schematic diagram of a display device according to an embodiment of the present application.

[0101] As shown in FIG13 , the color conversion substrate 3 further includes a filter layer 4 . The filter layer 4 is located between the substrate 31 and the embossed layer 33 . The filter layer 4 includes a plurality of openings for exposing the receiving units S where the color conversion layer 32 is not provided. The filter layer 4 is configured to filter blue light and transmit red and green light.

[0102] In the embodiment of the present application, the filter layer 4 is formed on the surface of the substrate 31 before the embossed layer 33 is formed. It is worth noting that the filter layer 4 is only formed at the position corresponding to the receiving unit S where the color conversion layer 32 is set, and the filter layer 4 opening is exposed in the receiving unit S where the scattering layer 34 is set.

[0103] The filter layer 4 can filter blue light and transmit red light and green light, thereby allowing the red light or green light stimulated by the color conversion layer 32 to be emitted, while the incompletely converted blue light is filtered to avoid optical crosstalk.

[0104] In specific implementation, the filter layer 4 can be a Bragg reflector, a Fabry-Perot resonant cavity or a chemical film. FIG14 is a schematic diagram of the structure of a Bragg reflector according to an embodiment of the present application, and FIG15 is a schematic diagram of the structure of a resonant cavity according to an embodiment of the present application.

[0105] As shown in FIG14 , when the filter layer adopts a Bragg reflector, the Bragg reflector includes a first dielectric layer 41 and a second dielectric layer 42 alternately stacked, wherein the thickness and refractive index of the first dielectric layer 41 and the second dielectric layer 42 meet the conditions of reflecting blue light and transmitting red light and green light.

[0106] The Bragg reflector utilizes the principle of thin film interference. Usually, two materials with high refractive index and low refractive index are alternately distributed. The optical thickness of each dielectric layer is λ / 4. By repeatedly setting multiple groups of dielectric layers, a reflectivity of more than 95% at the set wavelength can be achieved.

[0107] The filter layer 4 uses a Bragg reflection layer to reflect the unconverted blue light, further stimulating the color conversion layer 32 to perform color conversion, thereby improving the light extraction efficiency.

[0108] As shown in FIG15 , when the filter layer adopts a resonant cavity, the resonant cavity includes two dielectric layers 43 arranged opposite to each other. The distance between the two dielectric layers 43 and the refractive index of the medium between the two dielectric layers 43 meet the conditions of filtering blue light and transmitting red light and green light.

[0109] The Fabry-Perot cavity utilizes the continuous reflection and oscillation of light between two dielectric layers, allowing light of a wavelength that meets the frequency selection criteria to escape. Therefore, frequency selection of light of a set wavelength can be achieved by adjusting the spacing between the two dielectric layers 43 and the refractive index of the medium between the two dielectric layers 43.

[0110] In addition, the filter layer 4 can also be made of a chemical film that absorbs blue light and transmits red and green light, thereby filtering blue light. In specific implementations, the filter layer 4 can be made of a yellow dye, etc., which is not limited here.

[0111] As shown in Figure 13, the display device also includes an isolation layer 5. This isolation layer 5 is located between the driver substrate 1 and the imprinted layer 33. Its thickness is greater than the height of the light-emitting chip 2, ensuring a certain distance between the color conversion substrate 3 and the driver substrate 1. The isolation layer 5 includes multiple openings for exposing the light-emitting chip 2. Its orthographic projection onto the driver substrate 1 forms a grid-like structure. The isolation layer 5 blocks light emitted by the light-emitting chip 2, preventing it from entering the adjacent color conversion layer and thus preventing optical crosstalk.

[0112] In some embodiments, a display device includes: a driving substrate, a light-emitting chip located on the driving substrate, and a color conversion substrate disposed opposite the driving substrate; the color conversion substrate includes: a substrate and an imprinting layer; the imprinting layer includes a plurality of receiving units recessed toward one side of the substrate; a receiving unit is disposed corresponding to the light-emitting side of each light-emitting chip; a color conversion layer is disposed within some of the receiving units; the color conversion layer is configured to emit light of other colors under the stimulation of light emitted by the light-emitting chip; the thickness of the color conversion layer is not completely equal at each location, so as to adapt to the luminous intensity of the light emitted by the light-emitting chip, thereby avoiding the problem of halo. The thickness of the color conversion layer is relatively small at locations where the intensity of the light emitted by the light-emitting chip is relatively high, and the thickness of the color conversion layer is relatively large at locations where the intensity of the light emitted by the light-emitting chip is relatively low. This allows the color conversion layer to have a high light conversion efficiency at each location, thereby making the emitted light uniform.

[0113] In some embodiments, the color conversion substrate further includes a scattering layer. The scattering layer is located in the housing unit not provided with the color conversion layer. The scattering layer functions to scatter light emitted by the light-emitting chip, thereby producing a light emission pattern similar to that of the excitation light after passing through the color conversion layer.

[0114] In some embodiments, the light-emitting chip uses a blue Mini LED chip or a blue Micro LED chip, and the color conversion layer includes a red conversion layer and a green conversion layer. The red conversion layer emits red light when stimulated by blue light, and the green conversion layer emits green light when stimulated by blue light. Some light-emitting chips directly emit blue light, thus forming the three primary colors of light that form a color image.

[0115] In some embodiments, the embossed receiving cells have a uniform depth at all locations. The color conversion layer is formed within the receiving cells, and the surface in contact with the receiving cells generally has the same shape as the receiving cells. The receiving cells are generally rectangular or square in shape, and using a simple pattern for embossing can improve the yield of the formed receiving cells.

[0116] In some embodiments, when the light-emitting chip is an LED chip, the light intensity distribution satisfies the Lambertian distribution, and thus the thickness of the color conversion layer at the center is less than the thickness of the color conversion layer at the edge. The surface of the housing unit facing the light-emitting chip is rectangular, so that the surface of the color conversion layer in contact with the housing unit, that is, the surface of the color conversion layer facing away from the light-emitting chip, is also rectangular. The surface of the color conversion layer facing the light-emitting chip is configured to be arc-shaped. The arc-shaped color conversion layer can wrap around the light-emitting chip, so that the large-angle light emitted by the light-emitting chip can also excite the color conversion layer to perform color conversion, thereby improving the conversion efficiency of the color conversion layer. The scattering layer is generally configured to have the same shape as the color conversion layer, with the surface of the scattering layer facing away from the light-emitting chip being rectangular and the surface of the scattering layer facing the light-emitting chip being arc-shaped.

[0117] In some embodiments, the light intensity distribution of the light emitting chip may be such that the intensity of light at small angles is low and the intensity of light at large angles is high. The use of such a light emitting chip is beneficial for enhancing the light intensity at the edge of the sub-pixel, making the emitted light relatively uniform across the entire sub-pixel range. The depth of the accommodating unit formed by the embossing in the middle position is greater than the depth of the accommodating unit at the edge position, thereby forming a accommodating cavity that can accommodate the light emitting chip. The color conversion layer or scattering layer is filled in the corresponding accommodating unit so that the surface of the color conversion layer or scattering layer facing away from the light emitting chip has the same shape as the corresponding accommodating unit, and the surface of the color conversion layer or scattering layer facing the light emitting chip may be flat, and the surface of the color conversion layer or scattering layer facing the light emitting chip is flush with the surface of the embossed layer facing the light emitting chip at other positions except the accommodating unit.

[0118] In some embodiments, a surface of the accommodation unit facing the light-emitting chip is arc-shaped, conical-shaped, pyramid-shaped, truncated cone-shaped, or truncated pyramid-shaped.

[0119] In some embodiments, the color conversion substrate further includes a filter layer. The filter layer is positioned between the substrate and the embossed layer. The filter layer includes multiple openings for exposing the receiving units where the color conversion layer is not located. The filter layer is configured to filter blue light and transmit red and green light. This allows the red or green light stimulated by the color conversion layer to be emitted while filtering out incompletely converted blue light, thus preventing optical crosstalk.

[0120] In some embodiments, the filter layer may be a Bragg reflection layer, a Fabry-Perot cavity, or a chemical thin film.

[0121] In some embodiments, the display device further includes an isolation layer. The isolation layer is positioned between the driver substrate and the imprinted layer. The thickness of the isolation layer is greater than the height of the light-emitting chip, thereby maintaining a predetermined distance between the color conversion substrate and the driver substrate. The isolation layer includes multiple openings for exposing the light-emitting chip. The orthographic projection of the isolation layer onto the driver substrate forms a grid-like structure. The isolation layer is configured to block light emitted by the light-emitting chip, preventing it from entering the adjacent color conversion layer and thereby preventing optical crosstalk.

[0122] As shown in Figure 3B, in this embodiment of the present application, the depth of the accommodating unit S formed by embossing is greater at the center than at the edges, thereby forming a cavity that can accommodate the light-emitting chip. The shape of the accommodating unit S is generally the same as that of the second embossing mold, while the color conversion layer is formed in the accommodating unit S, and the surface in contact with the accommodating unit S generally has the same shape as the accommodating unit S. The depth of the accommodating unit S in the center is greater than the depth at the edges, which is more consistent with the light emission pattern of the LED chip.

[0123] In some embodiments, as shown in Figures 2B and 8B , the surface of the housing unit S facing the light-emitting chip 2 is curved, so that the surface of the color conversion layer 32 in contact with the housing unit S, i.e., the surface of the color conversion layer 32 facing away from the light-emitting chip 2, is also curved. In a specific implementation, this curved surface can satisfy the cosine equation to better adapt to the Lambertian distribution of light emitted by the LED chip.

[0124] To make the thickness of the color conversion layer 32 thinner at the center than at the edges, as shown in Figures 2B and 8B , the surface of the color conversion layer 32 facing the light-emitting chip 2 can also be curved. This curved color conversion layer 32 can wrap around the light-emitting chip 2, allowing wide-angle light emitted by the light-emitting chip 2 to stimulate the color conversion layer 32 for color conversion, thereby improving the color conversion efficiency of the color conversion layer.

[0125] The scattering layer 34 is usually configured to have the same shape as the color conversion layer 32 . As shown in FIG8B , the surface of the scattering layer 34 facing the light emitting chip 2 and the surface of the scattering layer 34 facing away from the light emitting chip 2 are both arc-shaped.

[0126] In some embodiments, the thickness of the color conversion layer 32 can be appropriately increased. Since the color conversion layer 32 is set to an arc shape, it can wrap the light-emitting chip so that the blue light emitted by the light-emitting chip can be completely converted by the color conversion layer 32, thereby avoiding crosstalk to adjacent positions, and no additional filtering structure is required.

[0127] In practice, the color conversion layer 32 and scattering layer 34 shown in Figure 8B can also be produced by embossing. Figures 16a-16n are schematic diagrams of the color conversion layer and scattering layer during production of another display device according to an embodiment of the present application.

[0128] As shown in Figure 16a, a layer of embossing adhesive 33' is formed on the surface of substrate 31 and embossed using a fourth mold Mr' to form a plurality of first receiving units Sr, as shown in Figure 16b. Next, as shown in Figure 9c, red conversion material 32r' is formed on the surface of embossing adhesive 33'. This red conversion material 32r' is then filled into the fourth receiving units Sr'. As shown in Figure 16d, the excess red conversion material 32r' outside the fourth receiving units Sr' is scraped off.

[0129] As shown in Figure 16e, the fifth mold Mg' is then used to emboss the embossing adhesive 33', forming a plurality of fifth receiving units Sg' as shown in Figure 16f. Next, as shown in Figure 16g, green conversion material 32g' is formed on the surface of the embossing adhesive 33', filling the fifth receiving units Sg' with the green conversion material 32g'. As shown in Figure 16h, the excess green conversion material 32g' outside the fifth receiving units Sg' is scraped off.

[0130] As shown in Figure 16i, a sixth mold Mb' is then used to emboss the embossed adhesive 33', forming a plurality of sixth receiving units Sb', as shown in Figure 16j. Next, as shown in Figure 16k, scattering material 34' is formed on the surface of the embossed adhesive 33', filling the sixth receiving units Sb' with the scattering material 34'. As shown in Figure 16l, the excess scattering material 34' outside the sixth receiving units Sb' is scraped off.

[0131] As shown in FIG16m, the red conversion material 32r', green conversion material 32g', and scattering material 34' formed within the accommodating unit are then embossed using mold M1, thereby forming the color conversion layer 32 and scattering layer 34 as shown in FIG16n. The curvature of the curved surface of the color conversion layer 32 and scattering layer 34 near the embossed layer 33 is smaller than the curvature of the curved surface away from the embossed layer 33. This allows the thickness of the color conversion layer 32 and scattering layer 34 at their centers to be smaller than that at their edges.

[0132] FIG17 is a partially enlarged schematic diagram of a color conversion layer of another display device according to an embodiment of the present application.

[0133] As shown in FIG. 17 , in the embodiment of the present application, a plurality of microstructures h are distributed in the color conversion layer 32 .

[0134] Because the refractive index of quantum dot materials differs significantly from that of air and the substrate material, light generated by the light-emitting chip is prone to total internal reflection at the interface between the high-refractive-index material and the low-refractive-index material, limiting the light extraction efficiency of the display device. In this embodiment, multiple microstructures h are distributed within the color conversion layer 32. After the light emitted from the light-emitting chip 2 is incident on the microstructures h, its propagation direction undergoes random changes, thereby reducing the effect of total internal reflection. Furthermore, distributing the microstructures h within the color conversion layer 32 reduces the refractive index of the color conversion layer 32, thereby reducing the refractive index difference between the color conversion layer 32 and adjacent film layers, reducing total internal reflection, and improving light extraction efficiency.

[0135] In practice, the microstructures h in the color conversion layer 32 can be arranged uniformly or irregularly, with sizes ranging from nanometers to micrometers. These microstructures h can also be produced by embossing. Specifically, the color conversion layer 32 can be embossed using a mold with a protruding structure, thereby forming microstructures with the same shape as the mold. The microstructures h can be formed as through holes, blind holes, or hollow structures. Hollow structures can be formed by injecting air into the color conversion layer, but this is not limited here.

[0136] As shown in Figure 1A , the color conversion substrate 3 and driver substrate 1 of a display device in the related art are separated by a certain distance, which can cause crosstalk between sub-pixels and reduce contrast and color rendering capabilities. Current methods employ a light-blocking barrier d between the two substrates, which increases the manufacturing process steps. However, due to the light absorption effect of the light-blocking barrier d, light incident on the barrier d is lost and cannot be converted into forward light output.

[0137] In view of this, another display device according to an embodiment of the present application further provides a filter layer in the receiving unit S to avoid light crosstalk and improve luminous efficiency. FIG18 is a third structural diagram of another display device according to an embodiment of the present application.

[0138] As shown in FIG18 , the color conversion substrate 3 further includes a filter layer 4. The filter layer 4 is located between the receiving unit S and the color conversion layer 32. The filter layer 4 is used to filter blue light and transmit red light and green light.

[0139] In the embodiment of the present application, the color conversion layer 32 has an arc-shaped structure. Before the color conversion layer 32 is formed in the accommodating unit S, the filter layer 4 is first formed on the surface of the accommodating unit S. It is worth noting that the filter layer 4 is only formed in the accommodating unit S where the color conversion layer 32 is set. As shown in Figure 18, the filter layer 4 is not formed in the accommodating unit S where the scattering layer 34 is set.

[0140] The filter layer 4 filters blue light and transmits red and green light, allowing the red or green light stimulated by the color conversion layer 32 to be emitted while filtering out incompletely converted blue light, thus preventing optical crosstalk. Furthermore, the presence of the filter layer 4 prevents the blue light emitted by the light-emitting chip 2 from entering the adjacent receiving unit S, thereby preventing light crosstalk. The structure of the filter layer 4 allows the color conversion substrate 3 to be fully bonded to the drive substrate 1, eliminating the need for a certain distance between them. This reduces the overall thickness of the display device, facilitating a slimmer and lighter design.

[0141] In specific implementation, the filter layer 4 can also be a Bragg reflection layer (as shown in FIG14 ), a Fabry-Perot resonant cavity (as shown in FIG15 ) or a chemical film.

[0142] It should be noted that after the filter layer is provided in the color conversion substrate, there is no excessive restriction on the thickness of the color conversion layer. The thickness of the color conversion layer can be appropriately reduced because the unconverted blue light can be filtered by the filter layer 4 and the problem of optical crosstalk will not occur.

[0143] FIG19 is a fourth structural schematic diagram of another display device according to an embodiment of the present application.

[0144] As shown in Figure 19 , the display device further includes a reflective layer 5. This reflective layer 5 is located on the side of the drive substrate 1 proximal to the light-emitting chip 2 and includes multiple openings for exposing the light-emitting chip 2. Due to the presence of the filter layer 4, the embossed layer 3 of the color conversion substrate in this embodiment of the present application can directly contact the reflective layer 5, thereby reducing the thickness of the display device.

[0145] There is an overlapping area between the orthographic projection of the accommodating unit S of the embossed layer 3 on the driving substrate 1 and the orthographic projection of the reflective layer 5 on the driving substrate. As a result, the light emitted or reflected toward one side of the driving substrate 1 can be reflected by the reflective layer 5 toward the light-emitting side of the display device, thereby improving the utilization efficiency of the light.

[0146] In a specific implementation, the reflective layer 5 can be made of a metal reflective layer, or can be made of a substrate coated with a reflective material, which is not limited here.

[0147] In some embodiments, a display device includes: a driving substrate, a light-emitting chip located on the driving substrate, and a color conversion substrate disposed opposite the driving substrate; the color conversion substrate includes: a substrate and an imprinted layer; the imprinted layer includes a plurality of receiving units recessed toward one side of the substrate; a receiving unit is disposed corresponding to the light-emitting side of each light-emitting chip; a color conversion layer is disposed within a portion of the receiving units; the color conversion layer is configured to emit light of other colors under the excitation of the light emitted by the light-emitting chip; the thickness of the color conversion layer at a central position is less than the thickness of the color conversion layer at an edge position. Because the luminous intensity of the light emitted at a small angle by the light-emitting chip is greater, the color conversion layer can be fully excited in the central region of the color conversion layer with a smaller thickness; while the luminous intensity of the light emitted at a large angle by the light-emitting chip is less, corresponding to the edge region of the color conversion layer with a larger thickness, the excitation efficiency of the color conversion layer in the edge region can be further improved, thereby ensuring that the excitation efficiency of the color conversion layer at each position is comparable, thereby avoiding halo problems caused by insufficient conversion at the edge position.

[0148] In some embodiments, the color conversion substrate further includes a scattering layer. The scattering layer is located in the housing unit not provided with the color conversion layer. The scattering layer functions to scatter light emitted by the light-emitting chip, thereby producing a light emission pattern similar to that of the excitation light after passing through the color conversion layer.

[0149] In some embodiments, the light-emitting chip uses a blue Mini LED chip or a blue Micro LED chip, and the color conversion layer includes a red conversion layer and a green conversion layer. The red conversion layer emits red light when stimulated by blue light, and the green conversion layer emits green light when stimulated by blue light. Some light-emitting chips directly emit blue light, thus forming the three primary colors of light that form a color image.

[0150] In some embodiments, the depth of the embossed housing unit in the middle is greater than at the edges, thereby forming a cavity that can accommodate the light-emitting chip. The color conversion layer is formed within the housing unit, and the surface in contact with the housing unit generally has the same shape as the housing unit. The greater depth of the housing unit in the middle than at the edges better matches the light emission pattern of the LED chip.

[0151] In some embodiments, the surface of the housing unit facing the light-emitting chip is curved, resulting in a curved surface of the color conversion layer that contacts the housing unit, i.e., the surface of the color conversion layer facing away from the light-emitting chip. This curved surface satisfies the cosine equation, better adapting to the Lambertian distribution of light emitted by the LED chip. The curved color conversion layer can wrap around the light-emitting chip, allowing wide-angle light emitted by the light-emitting chip to stimulate the color conversion layer for color conversion, thereby improving the color conversion efficiency of the color conversion layer.

[0152] In some embodiments, the thickness of the color conversion layer can be appropriately increased. Since the color conversion layer is set to an arc shape, it can wrap the light-emitting chip so that the blue light emitted by the light-emitting chip can be completely converted by the color conversion layer, thereby avoiding crosstalk to adjacent positions, and no additional filtering structure is required.

[0153] In some embodiments, the scattering layer is generally configured to have the same shape as the color conversion layer, and the surface of the scattering layer facing the light emitting chip and the surface of the scattering layer facing away from the light emitting chip are both arc-shaped.

[0154] In some embodiments, multiple microstructures are distributed within the color conversion layer. After light from the light-emitting chip enters the microstructures, its propagation direction undergoes random changes, thereby reducing total internal reflection (TRR). Furthermore, distributing the microstructures within the color conversion layer reduces the refractive index of the color conversion layer, thereby minimizing the difference in refractive index between the color conversion layer and adjacent film layers, reducing TIR and improving light extraction efficiency. The microstructures can be implemented as through-holes, blind holes, or hollow structures.

[0155] In some embodiments, the color conversion substrate further includes a filter layer. The filter layer is located between the receiving unit and the color conversion layer; the filter layer is used to filter blue light and transmit red and green light. This allows the red or green light stimulated by the color conversion layer to be emitted, while incompletely converted blue light is filtered, thereby preventing optical crosstalk. Due to the presence of the filter layer, blue light emitted by the light-emitting chip cannot enter the adjacent receiving unit, thereby preventing light crosstalk. The filter layer structure allows the color conversion substrate and the drive substrate to be fully bonded, eliminating the need for a certain distance between them. This reduces the overall thickness of the display device, facilitating a thinner and lighter design.

[0156] In some embodiments, after a filter layer is provided in the color conversion substrate, there are no restrictions on the thickness of the color conversion layer. The thickness of the color conversion layer can be appropriately reduced because the unconverted blue light can be filtered by the filter layer, and optical crosstalk will not occur.

[0157] In some embodiments, the filter layer may be a Bragg reflection layer or a Fabry-Perot cavity.

[0158] In some embodiments, the display device further includes a reflective layer. The reflective layer is located on the side of the driver substrate proximal to the light-emitting chip and includes a plurality of openings for exposing the light-emitting chip. Due to the provision of the filter layer, the embossed layer of the color conversion substrate can directly contact the reflective layer, thereby reducing the thickness of the display device. The accommodating unit of the embossed layer has an overlapping area where the orthographic projection of the driver substrate overlaps with the orthographic projection of the reflective layer on the driver substrate. As a result, light emitted or reflected toward the driver substrate can be reflected by the reflective layer toward the light-emitting side of the display device, thereby improving light utilization efficiency.

[0159] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A display device, comprising: A driving substrate, used for providing a driving signal; a light-emitting chip, located on the driving substrate and electrically connected to the driving substrate; a color conversion substrate, disposed opposite to the driving substrate; The color conversion substrate comprises: a substrate, disposed opposite to the driving substrate; An embossing layer is located on a side of the substrate facing the drive substrate; the embossing layer includes a plurality of accommodating units recessed toward one side of the substrate; one accommodating unit is correspondingly provided on the light-emitting side of each light-emitting chip; The color conversion layer is located in part of the accommodating unit; the color conversion layer is used to emit light of other colors under the excitation of the output light of the light-emitting chip; the thickness of the color conversion layer at each position is not completely equal.

2. The display device according to claim 1, wherein the depth of the accommodating unit at each position is equal; The thickness of the color conversion layer at the center is smaller than the thickness of the color conversion layer at the edge.

3. The display device according to claim 2, wherein a surface of the accommodating unit facing the light-emitting chip is rectangular; The surface of the color conversion layer facing away from the light emitting chip is rectangular, and the surface of the color conversion layer facing the light emitting chip is arc-shaped. 4 . The display device according to claim 1 , wherein a depth of the accommodation unit at a center position is greater than a depth of the accommodation unit at an edge position.

5. The display device according to claim 4, wherein the surface of the accommodating unit facing the light-emitting chip is in an arc shape, a cone shape, a pyramid shape, a truncated cone shape, or a truncated pyramid shape; The color conversion layer is filled in the corresponding accommodating unit, the surface of the color conversion layer facing the light-emitting chip is flat, and the surface of the color conversion layer facing the light-emitting chip is flush with the surface of the printed layer facing the light-emitting chip at other positions except the accommodating unit.

6. The display device according to any one of claims 1 to 5, wherein the light-emitting chip is configured to emit blue light; and the color conversion layer comprises: Red conversion layer and green conversion layer; The light-emitting chip is a blue light Micro LED chip; The color conversion layer is a quantum dot layer; The red conversion layer is a red quantum dot layer, and the green conversion layer is a green quantum dot layer.

7. The display device according to claim 6, wherein the color conversion substrate further comprises: a scattering layer, located in the receiving unit where the color conversion layer is not provided; The shape of the scattering layer is the same as that of the color conversion layer.

8. The display device according to claim 6, wherein the color conversion substrate further comprises: a filter layer located between the substrate and the embossed layer; the filter layer comprising a plurality of openings, the openings being used to expose the receiving unit where the color conversion layer is not provided; The filter layer is used to filter blue light and transmit red light and green light; The filter layer adopts a Bragg reflection layer; the Bragg reflection layer includes a first dielectric layer and a second dielectric layer alternately stacked, and the thickness and refractive index of the first dielectric layer and the second dielectric layer meet the conditions of reflecting blue light and transmitting red light and green light; Alternatively, the filter layer adopts a resonant cavity; the resonant cavity comprises: two dielectric layers arranged opposite to each other, the distance between the two dielectric layers satisfying the conditions of filtering blue light and transmitting red light and green light; Alternatively, the filter layer is a chemical film; the chemical film is used to absorb blue light and transmit red light and green light.

9. The display device according to claim 8, wherein the light-emitting chips are arranged in an array; and the receiving units of the embossed layer are arranged in an array; The red conversion layer, the green conversion layer and the scattering layer are repeatedly arranged in the accommodating unit in a set order; an adjacent red conversion layer and the corresponding light-emitting chip, an adjacent green conversion layer and the corresponding light-emitting chip, and an adjacent scattering layer and the corresponding light-emitting chip constitute a pixel unit.

10. The display device according to any one of claims 1 to 5, further comprising: an isolation layer, located between the driving substrate and the embossing layer, the isolation layer comprising a plurality of openings for exposing the light-emitting chip; The isolation layer has an orthographic projection on the driving substrate in a grid-like structure; the isolation layer is used to block the emitted light of the light-emitting chip; The thickness of the isolation layer is greater than the height of the light-emitting chip; and the embossing layer of the color conversion substrate is in contact with the isolation layer.

11. The display device according to claim 1, wherein a thickness of the color conversion layer at a center position is thinner than a thickness of the color conversion layer at an edge position; and a depth of the accommodation unit at a middle position is thicker than a depth of the accommodation unit at an edge position.

12. The display device according to claim 11, wherein a surface of the accommodating unit facing the light-emitting chip is arc-shaped; A surface of the color conversion layer facing the light emitting chip and a surface of the color conversion layer facing away from the light emitting chip are both arc-shaped. 13 . The display device according to claim 12 , wherein a plurality of microstructures are distributed in the color conversion layer.

14. The display device according to any one of claims 11 to 13, wherein the light-emitting chip is configured to emit blue light; and the color conversion layer comprises: Red conversion layer and green conversion layer; The light-emitting chip is a blue light Micro LED chip; The color conversion layer is a quantum dot layer; The red conversion layer is a red quantum dot layer, and the green conversion layer is a green quantum dot layer.

15. The display device according to claim 14, wherein the color conversion substrate further comprises: a filter layer, located between the accommodating unit and the color conversion layer; The filter layer is used to filter blue light and transmit red light and green light; The scattering layer is located in the accommodating unit where the color conversion layer is not provided; the surface of the scattering layer facing the light emitting chip and the surface of the scattering layer facing away from the light emitting chip are both arc-shaped.

16. The display device according to claim 15, wherein the light-emitting chips are arranged in an array; and the receiving units of the embossed layer are arranged in an array; The red conversion layer, the green conversion layer and the scattering layer are repeatedly arranged in the accommodating unit in a set order; an adjacent red conversion layer and the corresponding light-emitting chip, an adjacent green conversion layer and the corresponding light-emitting chip, and an adjacent scattering layer and the corresponding light-emitting chip constitute a pixel unit.

17. The display device according to claim 15, wherein the filter layer is a Bragg reflector layer; the Bragg reflector layer comprises a first dielectric layer and a second dielectric layer alternately stacked, wherein the thickness and refractive index of the first dielectric layer and the second dielectric layer satisfy the condition of reflecting blue light and transmitting red light and green light; Alternatively, the filter layer adopts a resonant cavity; the resonant cavity includes: Two dielectric layers are arranged opposite to each other, and the distance between the two dielectric layers satisfies the conditions of filtering blue light and transmitting red light and green light; Alternatively, the filter layer is a chemical film; the chemical film is used to absorb blue light and transmit red and green light.

18. The display device according to claim 15, further comprising: a reflective layer, located on a side of the driving substrate close to the light-emitting chip; the reflective layer includes a plurality of openings for exposing the light-emitting chip; The embossed layer is in direct contact with the reflective layer. 19 . The display device according to claim 18 , wherein an orthographic projection of the receiving unit of the embossing layer on the driving substrate and an orthographic projection of the reflective layer on the driving substrate have an overlapping area.

Images