OLED panel with trench drape structure

Abstract

Embodiments described herein generally relate to sub-pixel circuits that can be used in displays, such as organic light emitting diode (OLED) displays. The device includes: a substrate; a pixel defining layer (PDL) structure disposed over the section of the substrate; an inorganic or metal pendant structure disposed on the upper surface of the PDL structure; and a plurality of sub-pixels. The PDL structure includes a trench disposed in a top surface of the PDL structure. Each sub-pixel includes: an anode; an OLED material disposed over the anode and in contact with the anode; and a cathode, the cathode being disposed over the OLED material. The inorganic or metal drape structure has a drape extension that extends laterally over the trench. An encapsulation layer is disposed over the cathode and under at least a portion of the inorganic or metallic pendant structure and extends along a top surface of the PDL structure.

Description

Technical Field

[0001] Embodiments described herein generally relate to displays. More specifically, embodiments described herein relate to sub-pixel circuits that can be used in displays such as organic light emitting diode (OLED) displays.

[0002] Description of Related Technology

[0003] Input devices including display devices can be used in various electronic systems. An organic light emitting diode (OLED) is a light emitting diode (LED) in which the emitting electroluminescent layer is a film of an organic compound that emits light in response to an electric current. An OLED device is classified as a bottom emitting device if the emitted light passes through a transparent or translucent bottom electrode and substrate on which a panel is fabricated. Top emitting devices are classified based on whether the light emitted from the OLED device is emitted through a cover that is added after the device is manufactured. Currently, OLEDs are used to create display devices in many electronic devices. Electronic device manufacturers are driving these display devices to shrink in size while providing higher resolution than a few years ago.

[0004] OLED pixel patterning is based on processes that limit panel size, pixel resolution, and substrate size. Photolithography should be used to pattern pixels instead of using fine metal masks. Currently, OLED pixel patterning requires stripping of organic materials after the patterning process. When the organic materials are stripped, the organic materials leave behind particle problems that damage OLED performance. Therefore, what is needed in the art is a sub-pixel circuit that can increase pixels per inch and provide improved OLED performance. Summary of the invention

[0005] In one embodiment, a device having a plurality of sub-pixels is provided. Each sub-pixel includes a segment of a substrate, a first pixel defining layer (PDL) and a second pixel defining layer, the first PDL and the second PDL including a non-conductive material disposed above the segment of the substrate, each of the first PDL structure and the second PDL structure having a groove disposed between the peripheral portions of the upper surface of each of the first PDL structure and the second PDL structure. Each sub-pixel further includes a first inorganic overhang and a second inorganic overhang, each of the first inorganic overhang and the second inorganic overhang being defined by an overhang extension of an inorganic layer and disposed on a set of sidewalls and peripheral portions of the upper surface of the first PDL structure and the second PDL structure. The overhang extension extends laterally above the groove to define the first PDL overhang and the second PDL overhang. Each sub-pixel further includes: an anode; an organic light emitting diode (OLED) material disposed on the anode and the inorganic layer; and a cathode disposed above the OLED material. The cathode, the OLED material disposed on the inorganic layer, and the inorganic layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure extend through the peripheral portion of the upper surface of the first PDL layer and the second PDL layer and define an overhang extension. An encapsulation layer is disposed above each sub-pixel, and the encapsulation layer contacts the cathode; the sidewalls of the cathode, the OLED material, and the inorganic layer; the lower side surface of each overhang extension of the inorganic layer; and a portion of the top surface of the groove disposed between the peripheral portion of each of the first PDL structure and the second PDL structure.

[0006] In another embodiment, a device having a plurality of sub-pixels is provided. Each sub-pixel includes a segment of a substrate, a first PDL and a second PDL, the first PDL and the second PDL including a non-conductive material disposed above the segment of the substrate, each of the first PDL structure and the second PDL structure having a groove disposed between the peripheral portions of the upper surface of each of the first PDL structure and the second PDL structure. Each sub-pixel further includes a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer and disposed on the peripheral portions of the upper surfaces of the first PDL structure and the second PDL structure. The overhang extension extends laterally above the groove to define the first metal overhang and the second metal overhang. Each sub-pixel further includes an inorganic layer disposed on the sidewalls of the first PDL structure and the second PDL structure and disposed above the metal layer disposed on the peripheral portions of the upper surfaces of the first PDL structure and the second PDL structure. Each sub-pixel further includes: an anode; an OLED material disposed on the anode and an inorganic layer disposed on the sidewalls, the peripheral portion of the upper surface, and the overhang extension of the first and second PDL structures; and a cathode disposed on the OLED material. The cathode disposed on the OLED material is disposed on the anode, the inorganic layer disposed on the sidewalls of the first and second PDL structures and disposed above the metal layer disposed on the peripheral portion of the upper surface of the first and second PDL structures, and above the overhang extension of the metal layer. The cathode extends to contact the outer sidewalls of the OLED material, the inorganic layer, and the overhang extension of the metal layer. An encapsulation layer is disposed above each sub-pixel, and the encapsulation layer contacts the cathode; the sidewalls of the cathode, the OLED material, the inorganic layer, and the overhang extension of the metal layer; the lower side surface of each overhang extension of the metal layer; and a portion of the top surface of the groove disposed between the peripheral portion of each of the first and second PDL structures.

[0007] In another embodiment, a device having a plurality of sub-pixels is provided. Each sub-pixel includes a segment of a substrate, a first PDL and a second PDL, the first PDL and the second PDL including an inorganic material disposed above the segment of the substrate, each of the first PDL structure and the second PDL structure having a groove disposed between the peripheral portions of the upper surface of each of the first PDL structure and the second PDL structure. Each sub-pixel further includes a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer and disposed on the peripheral portions of the upper surfaces of the first PDL structure and the second PDL structure. The overhang extension extends laterally above the groove to define the first metal overhang and the second metal overhang. Each sub-pixel further includes: an anode; an OLED material disposed on the anode, the sidewalls of the first PDL structure and the second PDL structure, the metal layer disposed on the peripheral portions of the upper surface, and the overhang extensions of the first PDL structure and the second PDL structure. Each sub-pixel further includes a cathode disposed on the OLED material. The cathode disposed on the OLED material is disposed over the anode, the sidewalls of the first PDL structure and the second PDL structure, the metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, and the overhang extension of the metal layer. The cathode extends to contact the outer sidewalls of the OLED material and the overhang extension of the metal layer. An encapsulation layer is disposed over each sub-pixel, and the encapsulation layer contacts the cathode; the sidewalls of the cathode, the OLED material, and the overhang extension of the metal layer; the lower side surface of each overhang extension of the metal layer; and a portion of the top surface of the groove disposed between the peripheral portion of each of the first PDL structure and the second PDL structure.

[0008] In yet another embodiment, a device having a plurality of sub-pixels is provided. Each sub-pixel includes a segment of a substrate, a first PDL and a second PDL, the first PDL and the second PDL including an inorganic material disposed above the segment of the substrate, each of the first PDL structure and the second PDL structure having a groove disposed between the peripheral portions of the upper surface of each of the first PDL structure and the second PDL structure. Each sub-pixel further includes a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer, the metal layer having an overhang extension and an inner portion disposed on the peripheral portions of the upper surfaces of the first PDL structure and the second PDL structure. The overhang extension has a first tapered sidewall, and the inner portion has a second tapered sidewall. The overhang extension extends laterally above the groove to define the first metal overhang and the second metal overhang. Each sub-pixel further includes: an anode; an OLED material disposed on the anode, the sidewalls of the first PDL structure and the second PDL structure, the second tapered sidewall of the inner portion, and the top surface of the metal layer. Each sub-pixel further includes a cathode disposed on the OLED material. The cathode disposed on the OLED material is disposed above the anode, the sidewalls of the first PDL structure and the second PDL structure, the metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, and the overhang extension of the metal layer. The cathode contacts the second tapered sidewall of the inner portion of the metal layer. An encapsulation layer is disposed above each sub-pixel, and the encapsulation layer contacts the cathode; the sidewalls of the overhang extension of the cathode, the OLED material, and the metal layer; the lower side surface of each overhang extension of the metal layer; and a portion of the top surface of the groove disposed between the peripheral portion of each of the first PDL structure and the second PDL structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more specific description of the present disclosure briefly summarized above may be made by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the embodiments, and other equivalent embodiments may be recognized.

[0010] Figure 1A is a schematic top view of a first sub-pixel circuit according to embodiments described herein.

[0011] Figure 1B and Figure 1D is a schematic cross-sectional diagram of a first sub-pixel circuit according to embodiments described herein.

[0012] Figure 1Cis a schematic cross-sectional view of an inorganic overhang of a first sub-pixel circuit according to embodiments described herein.

[0013] Figure 2A is a schematic cross-sectional view of a second sub-pixel circuit according to embodiments described herein.

[0014] Figure 2B is a schematic cross-sectional view of a metal overhang of a second sub-pixel circuit according to embodiments described herein.

[0015] Figure 2C is a schematic top cross-sectional view of a second sub-pixel circuit having a dot-type architecture according to embodiments described herein.

[0016] Figure 2D is a schematic top cross-sectional view of a second sub-pixel circuit having a linear architecture according to embodiments described herein.

[0017] Figure 3A is a schematic cross-sectional view of a third sub-pixel circuit according to embodiments described herein.

[0018] Figure 3B is a schematic cross-sectional view of a metal overhang of a third sub-pixel circuit according to embodiments described herein.

[0019] Figure 4A is a schematic cross-sectional view of a fourth sub-pixel circuit according to embodiments described herein.

[0020] Figure 4B is a schematic cross-sectional view of a metal overhang of a fourth sub-pixel circuit according to embodiments described herein.

[0021] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0022] Embodiments described herein generally relate to displays. More specifically, embodiments described herein relate to subpixel circuits that can be used for displays (such as OLED displays). In one embodiment that can be combined with other embodiments described herein, the display is a bottom emission (BE) or top emission (TE) OLED display. In another embodiment that can be combined with other embodiments described herein, the display is a passive matrix (PM) or active matrix (AM) OLED display.

[0023] The first sub-pixel circuit has a linear architecture. The first sub-pixel circuit includes an adjacent non-conductive PDL structure in which a groove is provided. The inorganic overhang is arranged above the non-conductive PDL structure, and the cathode contacts the common cathode of the OLED display. The second sub-pixel circuit, the third sub-pixel circuit and the fourth sub-pixel circuit have a linear or dot architecture. The second sub-pixel circuit includes an adjacent non-conductive PDL structure in which a groove is provided. The metal overhang is arranged above the adjacent non-conductive PDL structure, wherein the inorganic layer is arranged above the non-conductive PDL structure. The cathode contacts the outer sidewall of the overhang extension of the OLED material, the inorganic layer and the metal layer of the metal overhang. The third sub-pixel circuit includes an adjacent inorganic PDL structure in which a groove is provided. The third sub-pixel circuit further includes a metal overhang arranged above the adjacent inorganic PDL structure and a cathode contacting the sidewall of the metal overhang. The fourth sub-pixel circuit includes an adjacent inorganic PDL structure in which a groove is provided. The fourth sub-pixel circuit further includes a metal overhang and a cathode contacting the inner tapered sidewall of the metal overhang.

[0024] Although the drawings depict two sub-pixels, the sub-pixel circuit of the embodiments described herein includes multiple sub-pixels, such as two or more sub-pixels. Each sub-pixel has an OLED material that is configured to emit white, red, green, blue, or other color light when powered on. For example, the OLED material of the first sub-pixel emits red light when powered on, the OLED material of the second sub-pixel emits green light when powered on, and the OLED material of the third sub-pixel emits blue light when powered on.

[0025] Figure 1A is a schematic top view of the first sub-pixel circuit 100 . Figure 1B is a cross-sectional view of the first sub-pixel circuit. Figure 1B A first subpixel 118 a and a second subpixel 118 b are depicted, but the first subpixel circuit 100 of the embodiments described herein may include two or more subpixels 118 , such as a third subpixel 118 c and a fourth subpixel.

[0026] The first sub-pixel circuit 100 has a linear architecture 101D. The first sub-pixel circuit 100 includes a plurality of sub-pixels 118, and the plurality of sub-pixels include at least a first sub-pixel 118a, a second sub-pixel 118b, and a third sub-pixel 118c. Each sub-pixel 118 has an OLED material 106, which is configured to emit white, red, green, blue, or other color light when powered on. For example, the OLED material 106 of the first sub-pixel 118a may emit red light when powered on, the OLED material of the second sub-pixel 118b may emit green light when powered on, and the OLED material of the third sub-pixel 118c may emit blue light when powered on. The adjacent non-conductive PDL structure 110 defines each sub-pixel 118. The first sub-pixel circuit 100 has a density of at least 2000 pixels per inch (ppi). A plurality of sub-pixels 118 are spaced apart from each other at a spacing 122. In some embodiments, the non-conductive PDL structure 110 has substantially the same width 124. The width 124 of adjacent non-conductive PDL structures 110 is about 2 microns to about 6 microns, and the spacing 122 between each sub-pixel 118 is less than 13 microns.

[0027] The linear architecture 101D of the first sub-pixel circuit 100 further includes a common cathode 120. In one embodiment that may be combined with other embodiments described herein, the common cathode 120 is electrically connected to one or more bus bars (not shown), which provide current and / or voltage to the common cathode 120. Each sub-pixel 118 includes a first end of the cathode 108 (e.g., Figure 1D The common cathode 120 is located above and below each of the plurality of sub-pixels 118 to provide a conductive path for current to flow from the common cathode 120 to each sub-pixel 118.

[0028] Figure 1C 1 is a schematic cross-sectional view of an inorganic overhang 112 of a first sub-pixel circuit 100. The first sub-pixel circuit 100 includes a substrate 102. An anode 104 is disposed on a top surface 103 of the substrate 102. In one embodiment that may be combined with other embodiments described herein, the anode 104 is pre-patterned on the substrate 102. For example, the substrate 102 is a pre-patterned indium tin oxide (ITO) glass substrate. The anode 104 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0029] The non-conductive PDL structure 110 is disposed on the substrate 102 and the peripheral portion 105 of the anode 104. The non-conductive material of the non-conductive PDL structure 110 includes one of an organic material or an inorganic material. The organic material of the non-conductive PDL structure 110 includes, but is not limited to, polyimide. The inorganic material of the non-conductive PDL structure 110 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent non-conductive PDL structures 110 define corresponding sub-pixels 118 and expose the anode 104 of the corresponding sub-pixel 118 of the first sub-pixel circuit 100. Each non-conductive PDL structure 110 on the first sub-pixel circuit 100 has a groove 110B, which is disposed between the peripheral portions 110A of the upper surface of each non-conductive PDL structure 110. After photoresist patterning is performed on each non-conductive PDL structure 110 , the trench 110B of each non-conductive PDL structure 110 is formed by an isotropic dry etching process.

[0030] The inorganic layer 113 is disposed on the adjacent non-conductive PDL structure 110 of each sub-pixel 118. In one embodiment, the inorganic layer 113 is disposed on portions of: the anode 104 and the adjacent non-conductive PDL structure 110. The inorganic layer 113 of the sub-pixel 118 is permanent to the sub-pixel circuit and further defines each sub-pixel 118 of the first sub-pixel circuit 100. The inorganic layer 113 includes an inorganic material. The inorganic material includes, but is not limited to, an inorganic silicon-containing material. For example, the silicon-containing material includes an oxide or nitride of silicon, or a combination thereof, such as silicon oxide (SiO2), silicon nitride (Si3N4), or silicon oxynitride (Si2N2O). The inorganic overhang 112 is defined by an overhang extension 115 of the inorganic layer 113 disposed on the sidewall 117 and the peripheral portion 110A of the upper surface of the non-conductive PDL structure 110. The overhang extension 115 of each inorganic overhang 112 extends laterally through the peripheral portion 110A of the upper surface of the non-conductive PDL structure 110 and overhangs over the groove 110B of the non-conductive PDL structure 110. The width 119 of the overhang extension is about 0.5 μm to about 1.5 μm. The first sub-pixel 118 defines the overhang using the groove 110B disposed in the non-conductive PDL structure 110 and the overhang extension 115 extending over the groove 110B. Since the groove 110B is disposed in the non-conductive PDL structure 110, no additional layer is required to be disposed on the inorganic PDL structure 110. Reducing the need for an additional layer to define the overhang reduces process costs, and the design parameters for defining the overhang result in an increased throughput.

[0031] The OLED material 106 is disposed on the anode 104 and the inorganic layer 113 of each sub-pixel 118. The cathode 108 is disposed on the OLED material 106, and the cathode disposed on the OLED material is disposed on the anode 104, the inorganic layer 113 disposed on the sidewall 117 and the peripheral portion 110A of the non-conductive PDL structure 110, and over the overhang extension 115 of the inorganic layer 113. In some embodiments, directional evaporation deposition is used to deposit the OLED material 106 and the cathode 108. The directional evaporation deposition of the OLED material 106 and the cathode 108 thereafter is performed at a determined deposition angle, which prevents the OLED material 106 and the cathode 108 from being disposed under the overhang extension 115 of each inorganic overhang 112 and inside the groove 110B.

[0032] Each sub-pixel 118 includes an encapsulation layer 114. The encapsulation layer 114 may be or may correspond to a local passivation layer. The encapsulation layer 114 of the corresponding sub-pixel 118 is disposed above the cathode 108. The encapsulation layer 114 contacts the cathode 108, the OLED material 106, and the sidewall 126 of the inorganic layer 113. The encapsulation layer 114 extends under at least a portion of each lower side surface 128 of the overhang extension 115. In some embodiments that may be combined with other embodiments described herein, the encapsulation layer 114 is disposed above the top surface 130 of the non-conductive PDL structure 110. In some embodiments that may be combined with other embodiments described herein, there may be a gap 132 between the encapsulation layer 114 disposed on one inorganic overhang 112 and the encapsulation layer 114 disposed on an adjacent inorganic overhang 112. The encapsulation layer 114 includes an inorganic material, such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material. In some embodiments that may be combined with other embodiments described herein, each sub-pixel 118 includes a global encapsulation layer 116. The global encapsulation layer 116 is disposed above the encapsulation layer 114. The inkjet layer may be disposed between the global encapsulation layer 116 and the encapsulation layer 114. The inkjet layer may include an acrylic material. In some embodiments that may be combined with other embodiments described herein, an isotropic deposition process is used to deposit the encapsulation layer 114 and the global encapsulation layer 116. The isotropic deposition process deposits the encapsulation layer 114 so that the encapsulation layer 114 contacts the lower side surface 128 of the overhang extension 115 and the top surface 130 of the non-conductive PDL structure 110. The isotropic deposition process deposits the global encapsulation layer 116 to be disposed at least above the encapsulation layer 114 in the groove 110B.

[0033] Figure 1D is a schematic cross-sectional view of the first sub-pixel circuit 100. Figure 1DAs shown, the first sub-pixel circuit 100 is globally contacted with the common cathode 120. The first sub-pixel circuit 100 having a linear architecture 101D includes a common cathode 120 extending along the width of the first sub-pixel circuit 100 above and below each of the plurality of sub-pixels 118. The common cathode 120 is disposed on the non-conductive PDL structure 110. Each of the plurality of sub-pixels 118 on the first sub-pixel circuit 100 includes a first end 134a of the cathode 108 in contact with one of the common cathodes 120 and a second end 134b of the cathode 108 in contact with another of the common cathodes 120. In one embodiment that may be combined with other embodiments described herein, the common cathode 120 is electrically connected to one or more bus bars (not shown), which provide current and / or voltage to the common cathode 120. The common cathode 120 is positioned above and below each of the plurality of sub-pixels 118 to provide a conductive path for current to flow from the common cathode 120 to each of the sub-pixels 118.

[0034] Figure 2A is a schematic cross-sectional view of a second subpixel circuit 200 having a metal overhang 212, wherein the cathode 208 extends to contact the outer sidewall 226 of the overhang extension 215 of the OLED material 206, the inorganic layer 213, and the metal layer 220. Figure 2A A first subpixel 218 a and a second subpixel 218 b are depicted, but the second subpixel circuit 200 of the embodiments described herein may include two or more subpixels 218 , such as a third subpixel and a fourth subpixel.

[0035] The second sub-pixel circuit 200 has a dot-type structure 201C (eg Figure 2C ) or linear architecture 201D (as shown Figure 2D218c (not shown). The second sub-pixel circuit 200 includes a plurality of sub-pixels 218, the plurality of sub-pixels including at least a first sub-pixel 218a, a second sub-pixel 218b, and a third sub-pixel 218c (not shown). Each sub-pixel 218 has an OLED material 206 configured to emit white, red, green, blue, or other color light when powered on. For example, the OLED material 206 of the first sub-pixel 218a may emit red light when powered on, the OLED material of the second sub-pixel 218b may emit green light when powered on, and the OLED material of the third sub-pixel 218c may emit blue light when powered on. The adjacent non-conductive PDL structure 210 defines each sub-pixel 218. The second sub-pixel circuit 200 has a density of at least 2000 pixels per inch (ppi). The plurality of sub-pixels 218 are spaced apart from each other at a spacing 222. In some embodiments, the non-conductive PDL structure 210 has substantially the same width 224. The width 224 of adjacent non-conductive PDL structures is about 2 microns to about 6 microns, and the spacing 222 between each sub-pixel 218 is less than 13 microns.

[0036] The second sub-pixel circuit 200 includes a substrate 202. An anode 204 is disposed on a top surface 203 of the substrate 202. In one embodiment that may be combined with other embodiments described herein, the anode 204 is pre-patterned on the substrate 202. For example, the substrate 202 is a pre-patterned indium tin oxide (ITO) glass substrate. The anode 204 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0037] The non-conductive PDL structure 210 is disposed on the substrate 202 and the peripheral portion 205 of the anode 204. The non-conductive PDL structure 210 includes a non-conductive material. The non-conductive material of the non-conductive PDL structure 210 includes one of an organic material or an inorganic material. The organic material of the non-conductive PDL structure 210 includes, but is not limited to, polyimide. The inorganic material of the non-conductive PDL structure 210 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. The adjacent non-conductive PDL structures 210 define the corresponding sub-pixels 218 and expose the anode 204 of the corresponding sub-pixel 218 of the second sub-pixel circuit 200. Each non-conductive PDL structure 210 on the second sub-pixel circuit 200 has a groove 210B, which is disposed between the peripheral portions 210A of the upper surface of each non-conductive PDL structure 210. The trench 210B of each non-conductive PDL structure 210 is formed by an isotropic dry etching process.

[0038] Figure 2B2 is a schematic cross-sectional view of a metal overhang of a second sub-pixel circuit 200. A metal layer 220 is disposed on the non-conductive PDL structure 210 adjacent to each sub-pixel 218. The metal material of the metal layer 220 includes, but is not limited to, molybdenum, chromium, titanium, gold, silver, copper, aluminum, ITO, a combination thereof, or other suitable conductive materials. The metal overhang 212 is defined by an overhang extension 215 of the metal layer 220 disposed on a peripheral portion 210A of the upper surface of the non-conductive PDL structure 210. The overhang extension 215 of each metal overhang 212 extends laterally through the peripheral portion 210A of the upper surface of the non-conductive PDL structure 210 and overhangs above the groove 210B region of the non-conductive PDL structure 210. The width 219 of the overhang extension 215 is about 0.5 μm to about 1.5 μm. In one example, the overhang extension 215 of the metal layer 220 is formed by a dry etching process, and the metal layer 220 is further formed by a wet etching process. The second sub-pixel 218 defines an overhang using a groove 210B disposed in the non-conductive PDL structure 210 and an overhang extension 215 extending above the groove 210B. Since the groove 210B is disposed in the non-conductive PDL structure 210, no additional layer is required to be disposed on the inorganic PDL structure 310. Reducing the need for an additional layer to define the overhang reduces process costs, and the design parameters for defining the overhang result in an increase in processing volume.

[0039] The inorganic layer 213 is disposed on the upper surface 211 of the adjacent non-conductive PDL structure 210 and the metal layer 220 of each sub-pixel 218. In one embodiment, the inorganic layer 213 is disposed on a portion of the following items: the anode 204, the adjacent non-conductive PDL structure 210, and the upper surface 211 of the metal layer 220. The inorganic layer 213 of the sub-pixel 218 is permanent to the sub-pixel circuit and further defines each sub-pixel 218 of the second sub-pixel circuit 200. The inorganic layer 213 includes an inorganic material. The inorganic material includes, but is not limited to, an inorganic silicon-containing material. For example, the silicon-containing material includes an oxide or nitride of silicon, or a combination thereof, such as silicon oxide (SiO2), silicon nitride (Si3N4), or silicon oxynitride (Si2N2O).

[0040] The OLED material 206 is disposed on the anode 204 and the inorganic layer 213 of each sub-pixel 218. In some embodiments, a directional evaporation deposition process is used to dispose the OLED material 206 on the anode 204 and the inorganic layer 213 of each sub-pixel 218. The directional evaporation deposition process deposits the OLED material 206 on the anode 204 and the inorganic layer 213 until a target thickness is reached. During the directional evaporation deposition process, a layer of the OLED material 206 is deposited on the inorganic layer 213 of each sub-pixel 218 and the outer sidewall 226 of the metal layer 220. For example, a laser etching process is used to remove the layer of the OLED material 206. The cathode 208 is disposed on the OLED material 206, and the cathode disposed on the OLED material is disposed on the anode 204, the inorganic layer 213 disposed on the sidewall 217 of the non-conductive PDL structure 210 and disposed on the metal layer 220 disposed on the peripheral portion 210A, and the overhang extension 215 of the metal layer 220. The cathode extends to contact the outer sidewalls 226 of the overhang extension 215 of the OLED material 206, the inorganic layer 213, and the metal layer 220. In some embodiments, the cathode 208 is disposed on the OLED material 206 and along the outer sidewalls 226 of the overhang extension 215 of the OLED material 206, the inorganic layer 213, and the metal layer 220 using a directional evaporation deposition process. Current and / or voltage is provided to the metal layer 220 for each sub-pixel 218. The contact between the cathode 208 and the metal layer 220 creates a conductive path for current to flow from the metal layer 220 to each sub-pixel 118.

[0041] Each sub-pixel 218 includes an encapsulation layer 214. The encapsulation layer 214 may be or may correspond to a local passivation layer. The encapsulation layer 214 of the corresponding sub-pixel 218 is disposed above the cathode 208. The encapsulation layer 214 contacts the cathode 208, the OLED material 206, and the outer sidewall 226 of the inorganic layer 213. The encapsulation layer 214 extends under at least a portion of each lower side surface 228 of the overhang extension 215. In some embodiments that may be combined with other embodiments described herein, the encapsulation layer 214 is disposed above the top surface 230 of the non-conductive PDL structure 210. In some embodiments that may be combined with other embodiments described herein, there may be a gap 232 between the encapsulation layer 214 disposed on one metal overhang 212 and the encapsulation layer 214 disposed on an adjacent metal overhang 212. The encapsulation layer 214 includes an inorganic material, such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material. In some embodiments that may be combined with other embodiments described herein, each sub-pixel 218 includes a global encapsulation layer 216. The global encapsulation layer 216 is disposed above the encapsulation layer 214. The inkjet layer may be disposed between the global encapsulation layer 216 and the encapsulation layer 214. The inkjet layer may include an acrylic material. In some embodiments that may be combined with other embodiments described herein, an isotropic deposition process is used to deposit the encapsulation layer 214 and the global encapsulation layer 216. The isotropic deposition process deposits the encapsulation layer 214 so that the encapsulation layer 214 contacts the lower side surface 228 of the overhang extension 215 and the top surface 230 of the non-conductive PDL structure 210. The isotropic deposition process deposits the global encapsulation layer 216 to be disposed at least above the encapsulation layer 214 in the groove 210B.

[0042] Figure 2C 2 is a schematic top cross-sectional view of the second sub-pixel circuit 200 having a dot-type architecture 201C. The dot-type architecture 201C may correspond to the second sub-pixel circuit 200, the third sub-pixel circuit 300, or the fourth sub-pixel circuit 400. Figure 2D 2 is a schematic top cross-sectional view of a second sub-pixel circuit 200 having a linear architecture 201D. The linear architecture 201D may correspond to the first sub-pixel circuit 100, the second sub-pixel circuit 200, the third sub-pixel circuit 300, or the fourth sub-pixel circuit 400. Figure 1C and Figure 1D Each of the top cross-sectional views is along Figure 2A The section line 2' is taken.

[0043] The dot-type architecture 201C includes a plurality of pixel openings 223A. Each of the pixel openings 223A is surrounded by a non-conductive PDL structure 210 that defines each of the sub-pixels 218 of the dot-type architecture 201C. The line-type architecture 201D includes a plurality of pixel openings 223B. Each of the pixel openings 223B is adjacent to a non-conductive PDL structure 210 that defines each of the sub-pixels 218 of the line-type architecture 201D.

[0044] Figure 3A is a schematic cross-sectional view of the third sub-pixel circuit 300. Figure 3A A first subpixel 318a and a second subpixel 318b are depicted, but the third subpixel circuit 300 of the embodiments described herein may include two or more subpixels 318, such as a third subpixel and a fourth subpixel.

[0045] The third sub-pixel circuit 300 has a dot-type structure 201C (eg Figure 2C ) or linear architecture 201D (as shown Figure 2D 318c (not shown). The third sub-pixel circuit 300 includes a plurality of sub-pixels 318, the plurality of sub-pixels including at least a first sub-pixel 318a, a second sub-pixel 318b, and a third sub-pixel 318c (not shown). Each sub-pixel 318 has an OLED material 306, which is configured to emit white, red, green, blue, or other color light when powered on. For example, the OLED material 306 of the first sub-pixel 318a may emit red light when powered on, the OLED material of the second sub-pixel 318b may emit green light when powered on, and the OLED material of the third sub-pixel 318c may emit blue light when powered on. The adjacent inorganic PDL structure 310 defines each sub-pixel 318. The third sub-pixel circuit 300 has a density of at least 2000 pixels per inch (ppi). The plurality of sub-pixels 318 are spaced apart from each other at a spacing 322. In some embodiments, the inorganic PDL structure 310 has substantially the same width 324. The width 324 of adjacent inorganic PDL structures 310 is about 2 microns to about 6 microns, and the spacing 322 between each sub-pixel 318 is less than 13 microns.

[0046] The third sub-pixel circuit 300 includes a substrate 302. An anode 304 is disposed on a top surface 303 of the substrate 302. In one embodiment that may be combined with other embodiments described herein, the anode 304 is pre-patterned on the substrate 302. For example, the substrate 302 is a pre-patterned indium tin oxide (ITO) glass substrate. The anode 304 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0047] The inorganic PDL structure 310 is disposed on the substrate 302 and the peripheral portion 305 of the anode 304. The inorganic PDL structure 310 includes an inorganic material. The inorganic material of the inorganic PDL structure 310 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. The adjacent inorganic PDL structure 310 defines the corresponding sub-pixel 318 and exposes the anode 304 of the corresponding sub-pixel 318 of the third sub-pixel circuit 300. Each inorganic PDL structure 310 on the sub-pixel circuit 310 has a groove 310B, which is disposed between the peripheral portion 310A of the upper surface of each inorganic PDL structure 310. The groove 310B of each inorganic PDL structure 310 is formed by an isotropic dry etching process.

[0048] Figure 3B 3 is a schematic cross-sectional view of a metal overhang of a third sub-pixel circuit 300. A metal layer 320 is disposed on an inorganic PDL structure 310 adjacent to each sub-pixel 318. The metal material of the metal layer 320 includes, but is not limited to, molybdenum, chromium, titanium, gold, silver, copper, aluminum, ITO, a combination thereof, or other suitable conductive materials. The metal overhang 312 is defined by an overhang extension 315 of the metal layer 320 disposed on a peripheral portion 310A of the upper surface of the inorganic PDL structure 310. The overhang extension 315 of each metal overhang 312 extends laterally through the peripheral portion 310A of the upper surface of the inorganic PDL structure 310 and overhangs above the groove 310B region of the inorganic PDL structure 310. The width 319 of the overhang extension 315 is about 0.5 μm to about 1.5 μm. In one example, the overhang extension 315 of the metal layer 320 is formed by a dry etching process, and the metal layer 320 is further formed by a wet etching process. The third sub-pixel 318 defines an overhang using a groove 310B disposed in the inorganic PDL structure 310 and an overhang extension 315 extending above the groove 210B. Since the groove 310B is disposed in the inorganic PDL structure 310, no additional layer is required to be disposed on the inorganic PDL structure 310. Reducing the need for an additional layer to define the overhang reduces process costs, and the design parameters for defining the overhang result in an increase in processing volume.

[0049] The OLED material 306 is disposed on the anode 304 and the inorganic PDL structure 310 of each sub-pixel 318. In some embodiments, a directional evaporation deposition process is used to dispose the OLED material 306 on the anode 304 and the inorganic PDL structure 310 of each sub-pixel 318. The directional evaporation deposition process deposits the OLED material 306 on the anode 304 and the inorganic PDL structure 310 until a target thickness is reached. During the directional evaporation deposition process, a layer of the OLED material 306 is deposited on the outer sidewall 326 of the metal layer 320. For example, a laser etching process is used to remove the layer of the OLED material 306. A cathode 308 is disposed on the OLED material 306, and the cathode disposed on the OLED material is disposed over the anode 304, the sidewall 317 of the inorganic PDL structure 310, the metal layer 320 disposed on the peripheral portion 310A, and the overhang extension 315 of the metal layer 320. The cathode extends to contact the outer sidewalls 226 of the overhang extension 215 of the OLED material 206, the inorganic layer 213, and the metal layer 220. The cathode 308 of each sub-pixel 318 extends to contact the outer sidewalls 326 of the overhang extension 315 of the OLED material 306 and the metal layer 320. In some embodiments, the cathode 308 is disposed on the OLED material 306 and along the outer sidewalls 326 of the overhang extension 315 of the OLED material 306 and the metal layer 320 using a directional evaporation deposition process. Current and / or voltage is provided to the metal layer 320 of each sub-pixel 318. The contact between the cathode 308 and the metal layer 320 creates a conductive path for current to flow from the metal layer 320 to each sub-pixel 318.

[0050] Each sub-pixel 318 includes an encapsulation layer 314. The encapsulation layer 314 may be or may correspond to a local passivation layer. The encapsulation layer 314 of the corresponding sub-pixel 318 is disposed above the cathode 308. The encapsulation layer 314 contacts the cathode 308, the OLED material 306, and the outer sidewall 326 of the metal layer 320. The encapsulation layer 314 extends under at least a portion of each lower side surface 328 of the overhang extension 315. In some embodiments that may be combined with other embodiments described herein, the encapsulation layer 314 is disposed above the top surface 330 of the inorganic PDL structure 310. In some embodiments that may be combined with other embodiments described herein, there is a gap 332 between the encapsulation layer 314 disposed on one metal overhang 312 and the encapsulation layer 314 disposed on an adjacent metal overhang 312. The encapsulation layer 314 includes an inorganic material, such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material. In some embodiments that may be combined with other embodiments described herein, each sub-pixel 318 includes a global encapsulation layer 316. The global encapsulation layer 316 is disposed above the encapsulation layer 314. The inkjet layer may be disposed between the global encapsulation layer 316 and the encapsulation layer 314. The inkjet layer may include an acrylic material. In some embodiments that may be combined with other embodiments described herein, an isotropic deposition process is used to deposit the encapsulation layer 314 and the global encapsulation layer 316. The isotropic deposition process deposits the encapsulation layer 314 so that the encapsulation layer 314 contacts the lower side surface 328 of the overhang extension 315 and the top surface 330 of the inorganic PDL structure 310. The isotropic deposition process deposits the global encapsulation layer 316 to be disposed at least above the encapsulation layer 314 in the groove 310B.

[0051] Figure 4A is a schematic cross-sectional view of the fourth sub-pixel circuit 400. Figure 4A A first subpixel 418a and a second subpixel 418b are depicted, but the fourth subpixel circuit 400 of the embodiments described herein may include two or more subpixels 418, such as a third subpixel and a fourth subpixel.

[0052] The fourth sub-pixel circuit 400 has a dot-type structure 201C (eg Figure 2C ) or linear architecture 201D (as shown Figure 2D4. The fourth sub-pixel circuit 400 includes a plurality of sub-pixels 418, the plurality of sub-pixels including at least a first sub-pixel 418a, a second sub-pixel 418b, and a third sub-pixel 418c (not shown). Each sub-pixel 418 has an OLED material 406 configured to emit white, red, green, blue, or other color light when powered on. For example, the OLED material 406 of the first sub-pixel 418a may emit red light when powered on, the OLED material of the second sub-pixel 418b may emit green light when powered on, and the OLED material of the third sub-pixel 418c may emit blue light when powered on. The adjacent inorganic PDL structure 410 defines each sub-pixel 418. The fourth sub-pixel circuit 400 has a density of at least 2000 pixels per inch (ppi). The plurality of sub-pixels 418 are spaced apart from each other by a spacing 422. In some embodiments, the inorganic PDL structure 410 has substantially the same width 424. The width 424 of adjacent inorganic PDL structures 410 is about 2 microns to about 6 microns, and the spacing 422 between each sub-pixel 418 is less than 13 microns.

[0053] The fourth sub-pixel circuit 400 includes a substrate 402. An anode 404 is disposed on a top surface 403 of the substrate 402. In one embodiment that may be combined with other embodiments described herein, the anode 404 is pre-patterned on the substrate 402. For example, the substrate 402 is a pre-patterned indium tin oxide (ITO) glass substrate. The anode 404 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

[0054] The inorganic PDL structure 410 is disposed on the substrate 402 and the peripheral portion 405 of the anode 404. The inorganic PDL structure 410 includes an inorganic material. The inorganic material of the inorganic PDL structure 410 includes, but is not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. The adjacent inorganic PDL structure 410 defines the corresponding sub-pixel 418 and exposes the anode 404 of the corresponding sub-pixel 418 of the fourth sub-pixel circuit 400. Each inorganic PDL structure 410 on the sub-pixel circuit 410 has a groove 410B, which is disposed between the peripheral portion 410A of the upper surface of each inorganic PDL structure 410. The groove 410B of each inorganic PDL structure 410 is formed by an isotropic dry etching process.

[0055] Figure 4B4 is a schematic cross-sectional view of a metal overhang 412 of a fourth sub-pixel circuit 400. A metal layer 420 is disposed on an inorganic PDL structure 410 adjacent to each sub-pixel 418. The metal material of the metal layer 420 includes, but is not limited to, molybdenum, chromium, titanium, gold, silver, copper, aluminum, ITO, a combination thereof, or other suitable conductive materials. The metal overhang 412 is defined by an overhang extension 415 of the metal layer 420 disposed on a peripheral portion 410A of an upper surface of the inorganic PDL structure 410. The metal extension 415 has a first tapered sidewall 431, and an inner portion 434 of the metal layer 420 has a second tapered sidewall 433. The overhang extension 415 of each metal overhang 412 extends laterally through a peripheral portion 410A of an upper surface of the inorganic PDL structure 410 and overhangs above a groove 410B region of the inorganic PDL structure 410. The width 419 of the overhang extension 415 is about 0.5 μm to about 1.5 μm. In one example, the overhang extension 415 of the metal layer 420 is formed by a dry etching process, and the metal layer 420 is further formed by a wet etching process. The fourth sub-pixel 418 defines an overhang using a groove 410B disposed in the inorganic PDL structure 410 and an overhang extension 415 extending above the groove 410B. Since the groove 410B is disposed in the inorganic PDL structure 410, no additional layer is required to be disposed on the inorganic PDP structure 410. Reducing the need for an additional layer to define the overhang reduces process costs, and the design parameters for defining the overhang result in an increased throughput.

[0056] The OLED material 406 is disposed on the anode 404 and the inorganic PDL structure 410 of each sub-pixel 418. In some embodiments, a directional evaporation deposition process is used to dispose the OLED material 406 on the anode 404 and the inorganic PDL structure 410 of each sub-pixel 418. The directional evaporation deposition process deposits the OLED material 406 on the anode 404 and the inorganic PDL structure 410 until a target thickness is reached. During the directional evaporation deposition process, a layer of the OLED material 406 is deposited on the outer sidewall 426 of the metal layer 420. For example, a laser etching process is used to remove the layer of the OLED material 406. The OLED material 406 deposited on top of the metal layer 420 is disconnected from the OLED material 406 deposited on the anode 404 and along the sidewall 417 of the inorganic PDL structure 410. The cathode 408 is disposed on the OLED material 406, and the cathode disposed on the OLED material is disposed over the anode 404, the sidewall 417 of the inorganic PDL structure 410, the metal layer 420 disposed on the peripheral portion 410A, and the overhang extension 415 of the metal layer 420. The cathode 408 contacts the second tapered sidewall 433 of the inner portion 434 of the metal layer 420. In some embodiments, the cathode 408 is disposed on the OLED material 406 and along the outer sidewall 426 of the overhang extension 415 of the OLED material 406 and the metal layer 420 using a directional evaporation deposition process. The metal layer 420 of each sub-pixel 418 is provided with current and / or voltage. The contact between the cathode 408 and the metal layer 420 creates a conductive path for current to flow from the metal layer 420 to each sub-pixel 418.

[0057] Each sub-pixel 418 includes an encapsulation layer 414. The encapsulation layer 414 may be or may correspond to a local passivation layer. The encapsulation layer 414 of the corresponding sub-pixel 418 is disposed above the cathode 408. The encapsulation layer 414 contacts the cathode 408, the OLED material 406, and the outer sidewall 426 of the metal layer 420. The encapsulation layer 414 extends under at least a portion of each lower side surface 428 of the overhang extension 415. In some embodiments that may be combined with other embodiments described herein, the encapsulation layer 414 is disposed above the top surface 430 of the inorganic PDL structure 410. In some embodiments that may be combined with other embodiments described herein, there may be a gap 432 between the encapsulation layer 414 disposed on one metal overhang 412 and the encapsulation layer 414 disposed on an adjacent metal overhang 412. The encapsulation layer 414 includes an inorganic material, such as a silicon-containing material. The silicon-containing material may include a Si3N4-containing material. In some embodiments that may be combined with other embodiments described herein, each sub-pixel 418 includes a global encapsulation layer 416. The global encapsulation layer 416 is disposed above the encapsulation layer 414. The inkjet layer may be disposed between the global encapsulation layer 416 and the encapsulation layer 414. The inkjet layer may include an acrylic material. In some embodiments that may be combined with other embodiments described herein, an isotropic deposition process is used to deposit the encapsulation layer 414 and the global encapsulation layer 416. The isotropic deposition process deposits the encapsulation layer 414 so that the encapsulation layer 414 contacts the lower side surface 428 of the overhang extension 415 and the top surface 430 of the inorganic PDL structure 410. The isotropic deposition process deposits the global encapsulation layer 416 to be disposed at least above the encapsulation layer 414 in the groove 410B.

[0058] In summary, what is described herein relates to forming sub-pixel circuits that can be used for displays, such as organic light emitting diode (OLED) displays. The inorganic PDL overhang structure (according to the first sub-pixel circuit) or the metal-containing overhang structure (according to the second sub-pixel circuit, the third sub-pixel circuit, or the fourth sub-pixel circuit) that defines the proximity of each sub-pixel of the sub-pixel circuit of the display supports the use of evaporation deposition to form the sub-pixel circuit. Each sub-pixel uses a groove set in the PDL and an inorganic overhang or an extension of the metal overhang extending above the groove to define the overhang. Because the groove is set in the PDL, there is no need for an additional layer set on the PDL. Reducing the need for an additional layer to define the overhang reduces process costs, and the design parameters for defining the overhang result in an increase in processing volume.

[0059] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A device having a plurality of sub-pixels, each sub-pixel comprising: a section of a substrate; a first pixel defining layer (PDL) structure and a second pixel defining layer structure, the first PDL structure and the second PDL structure comprising a non-conductive material, each of the first PDL structure and the second PDL structure having a groove disposed between a peripheral portion of an upper surface of each of the first PDL structure and the second PDL structure; a first inorganic overhang and a second inorganic overhang, each of the first inorganic overhang and the second inorganic overhang being defined by an overhang extension of an inorganic layer disposed on a sidewall and the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, the overhang extension extending laterally through the groove to define the first PDL overhang and the second PDL overhang; anode; an organic light emitting diode (OLED) material disposed on the anode, the inorganic layer disposed on the sidewalls and the peripheral portion of the upper surface of the first and second PDL structures, and the overhang extension of the inorganic layer; and a cathode disposed on the OLED material, the cathode disposed over: the anode; the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surfaces of the first PDL structure and the second PDL structure; and The overhang extending portion of the inorganic layer.

2. The device of claim 1, further comprising an encapsulation layer, the encapsulation layer being arranged in contact with: the cathode; sidewalls of the cathode, the OLED material, and the inorganic layer; an underside surface of each overhang extension of the inorganic layer; and A portion of a top surface of the groove is disposed between a peripheral portion of each of the first PDL structure and the second PDL structure. 3 . The device of claim 2 , further comprising a global passivation layer disposed over the encapsulation layer and the first and second PDL structures. The device of claim 1 , wherein the device comprises a linear architecture.

5. The device of claim 4, wherein the cathode of each sub-pixel in the linear architecture is in contact with a common cathode. The device of claim 1 , wherein the non-conductive material is an organic material.

7. The device of claim 1, wherein the non-conductive material is an inorganic material.

8. The device of claim 7, wherein the inorganic material comprises silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof.

9. A device having a plurality of sub-pixels, each sub-pixel comprising: a section of a substrate; a first pixel defining layer (PDL) structure and a second pixel defining layer structure, the first PDL structure and the second PDL structure comprising a non-conductive material, each of the first PDL structure and the second PDL structure having a groove disposed between a peripheral portion of an upper surface of each of the first PDL structure and the second PDL structure; a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, the overhang extension extending laterally through the trench to define the first metal overhang and the second metal overhang; an inorganic layer disposed on sidewalls of the first and second PDL structures and disposed over the metal layer disposed on the peripheral portion; anode; an organic light emitting diode (OLED) material disposed on the anode and the inorganic layer disposed on the sidewalls, the peripheral portion of the upper surface, and the overhang extension of the first and second PDL structures; and a cathode disposed on the OLED material, the cathode disposed over: the anode; the inorganic layer disposed on the sidewalls of the first PDL structure and the second PDL structure and disposed over the metal layer disposed on the peripheral portion; and The overhang extension of the metal layer, wherein the cathode extends to contact the OLED material, the inorganic layer, and the outer sidewalls of the overhang extension of the metal layer.

10. The device of claim 9, further comprising an encapsulation layer, the encapsulation layer being arranged in contact with: the cathode; sidewalls of the cathode, the OLED material, the inorganic layer, and the overhang extension of the metal layer; an underside surface of each overhang extension of the metal layer; and A portion of a top surface of the groove is disposed between a peripheral portion of each of the first PDL structure and the second PDL structure.

11. The device of claim 9, wherein the device comprises a line-type architecture or a point-type architecture.

12. The device of claim 9, wherein the non-conductive material is an organic material.

13. The device of claim 9, wherein the non-conductive material is an inorganic material.

14. The device of claim 9, wherein the metal layer comprises titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), a transparent conductive oxide (TCO), or a combination thereof.

15. The device of claim 14, wherein the TCO comprises indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or a combination thereof.

16. A device having a plurality of sub-pixels, each sub-pixel comprising: a section of a substrate; a first pixel defining layer (PDL) structure and a second pixel defining layer structure, the first PDL structure and the second PDL structure comprising an inorganic material, each of the first PDL structure and the second PDL structure having a groove disposed between a peripheral portion of an upper surface of each of the first PDL structure and the second PDL structure; a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, the overhang extension extending laterally through the trench to define the first metal overhang and the second metal overhang; anode; an organic light emitting diode (OLED) material disposed on the anode, the sidewalls of the first and second PDL structures, the metal layer disposed on the peripheral portion of the upper surface, and the overhang extension; and a cathode disposed on the OLED material, the cathode disposed over: the anode; the sidewalls of the first PDL structure and the second PDL structure; the metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure; and The overhang extension of the metal layer, wherein the cathode extends to contact the OLED material and the outer sidewalls of the overhang extension of the metal layer.

17. The device of claim 16, further comprising an encapsulation layer, the encapsulation layer being arranged in contact with: the cathode; the cathode, the OLED material, and the sidewalls of the overhang extension of the metal layer; an underside surface of each overhang extension of the metal layer; and A portion of a top surface of the groove is disposed between a peripheral portion of each of the first and second PDL structures.

18. The device of claim 16, wherein the device comprises a line-type architecture or a point-type architecture.

19. The device of claim 16, wherein the device comprises a local cathode contact.

20. The device of claim 16, wherein the inorganic material comprises silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), silicon oxide (SiO2), or a combination thereof.

21. The device of claim 16, wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or a combination thereof.

22. The device of claim 21, wherein the TCO comprises IZO, ITO, IGZO, or a combination thereof.

23. A device having a plurality of sub-pixels, each sub-pixel comprising: a section of a substrate; a first pixel defining layer (PDL) structure and a second pixel defining layer structure, the first PDL structure and the second PDL structure comprising an inorganic material, each of the first PDL structure and the second PDL structure having a groove disposed between a peripheral portion of an upper surface of each of the first PDL structure and the second PDL structure; a first metal overhang and a second metal overhang, each of the first metal overhang and the second metal overhang being defined by an overhang extension of a metal layer, the metal layer having the overhang extension and an inner portion disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure, the overhang extension having a first tapered sidewall, and the inner portion having a second tapered sidewall, the overhang extension extending laterally through the trench to define the first metal overhang and the second metal overhang; anode; an organic light emitting diode (OLED) material disposed on the anode, the sidewalls of the first and second PDL structures, the second tapered sidewalls of the inner portion, and a top surface of the metal layer; and a cathode disposed on the OLED material, the cathode disposed over: the anode; the sidewalls of the first PDL structure and the second PDL structure; the metal layer disposed on the peripheral portion of the upper surface of the first PDL structure and the second PDL structure; and The overhang extends the metal layer, wherein the cathode contacts the second tapered sidewall of the inner portion of the metal layer.

24. The device of claim 23, further comprising an encapsulation layer, the encapsulation layer being arranged in contact with: the cathode; the cathode, the OLED material, and the sidewalls of the overhang extension of the metal layer; an underside surface of each overhang extension of the metal layer; and A portion of a top surface of the groove is disposed between a peripheral portion of each of the first PDL structure and the second PDL structure.

25. The device of claim 23, wherein the device comprises a line-type architecture or a point-type architecture.

26. The device of claim 23, wherein the device comprises a local cathode contact.

27. The device of claim 23, wherein the inorganic material comprises silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), silicon oxide (SiO2), or a combination thereof.

28. The device of claim 23, wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or a combination thereof.

29. The device of claim 28, wherein the TCO comprises IZO, ITO, IGZO, or a combination thereof.

30. A device as described in claim 23, wherein the OLED material is in contact with a lower portion of the second tapered sidewall of the inner portion of the metal layer, and the cathode is in contact with an upper portion above the lower portion of the second tapered sidewall of the inner portion of the metal layer and the OLED material disposed on the metal layer.

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