Light emitting diode with improved current spreading capability and method of manufacturing the same

Abstract

The embodiment of the present disclosure provides a light-emitting diode with improved current spreading capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a pad electrode layer. The connecting electrode layer comprises a plurality of first connecting electrodes and a plurality of second connecting electrodes arranged alternately and spaced apart in a strip shape in a first direction. The length direction of the first connecting electrodes and the second connecting electrodes is a second direction, and the first direction and the second direction intersect. Each first connecting electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first through holes penetrating the first passivation layer. Each second connecting electrode is electrically connected to a second semiconductor layer through a plurality of second through holes penetrating the first passivation layer. The embodiment of the present disclosure can improve the light-emitting efficiency and reliability of the LED and reduce the driving voltage of the LED.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a light-emitting diode with improved current spreading capability and a method for its fabrication. Background Technology

[0002] Light-emitting diodes (LEDs) are widely used in various light source fields such as backlighting, lighting, and landscaping due to their small size, long lifespan, rich and colorful colors, and low energy consumption.

[0003] In related technologies, an LED includes a light-emitting structure and a connecting electrode layer. The light-emitting structure comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially. The light-emitting structure has a groove extending from the surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer. The connecting electrode layer includes a first connecting electrode and a second connecting electrode. The first connecting electrode is located in the groove and connected to the first semiconductor layer, while the second connecting electrode is located on the surface of the second semiconductor layer and connected to it. Both the first and second connecting electrodes include multiple interconnected strip-shaped electrodes.

[0004] However, when current is conducted to the light-emitting structure through the first and second connecting electrodes, the current may accumulate in the areas where the strip electrodes connect, affecting the lateral spread of the current in the connecting electrode layer. Uneven current conduction in different regions of the connecting electrode layer results in uneven current distribution within the light-emitting structure, leading to non-radiative recombination of charge carriers and affecting the luminous efficiency of the LED. Furthermore, current congestion caused by uneven current distribution can increase the LED's driving voltage and lead to LED breakdown failure, thus affecting the LED's reliability. Summary of the Invention

[0005] This disclosure provides a light-emitting diode (LED) with improved current spreading capability and its fabrication method, which can improve the luminous efficiency and reliability of the LED and reduce the driving voltage of the LED. The technical solution is as follows:

[0006] On one hand, a light-emitting diode (LED) is provided, comprising a light-emitting structure, a first passivation layer, a connection electrode layer, a second passivation layer, and a pad electrode layer. The light-emitting structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially. The light-emitting structure has a plurality of grooves extending from the surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer. The first passivation layer covers the surface of the second semiconductor layer away from the light-emitting layer. The connection electrode layer includes a plurality of strip-shaped first connection electrodes and a plurality of strip-shaped second connection electrodes arranged alternately in a first direction. The length direction of both the first and second connection electrodes is a second direction, and the first and second directions intersect. Each first connection electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first vias penetrating the first passivation layer, and each second connection electrode is electrically connected to a second semiconductor layer through a plurality of second vias penetrating the first passivation layer; the second passivation layer covers the surface of the connection electrode layer away from the light-emitting structure; the pad electrode layer is located on the surface of the second passivation layer away from the connection electrode layer, and the pad electrode layer includes first pad electrodes and second pad electrodes spaced apart in the second direction, the first pad electrodes penetrating the second passivation layer and connecting to the plurality of first connection electrodes, and the second pad electrodes penetrating the second passivation layer and connecting to the plurality of second connection electrodes.

[0007] Optionally, the spacing between two adjacent first connecting electrodes in the first direction is equal to the spacing between two adjacent second connecting electrodes in the first direction.

[0008] Optionally, the spacing between two adjacent first connecting electrodes in the first direction and the spacing between two adjacent second connecting electrodes in the first direction are both 90 μm to 110 μm.

[0009] Optionally, the spacing between adjacent first and second connecting electrodes in the first direction is 35 μm to 85 μm.

[0010] Optionally, the light-emitting diode further includes a first electrode layer, the first electrode layer including a plurality of first electrode groups and a plurality of second electrode groups, the plurality of first electrode groups and the plurality of second electrode groups being alternately spaced apart in the first direction; each first electrode group includes a plurality of first electrodes spaced apart in the second direction, each first electrode being located in a groove and connected to the first semiconductor layer, each first connection electrode being connected to a first electrode in a first electrode group through a plurality of first vias; each second electrode group includes a plurality of second electrodes spaced apart in the second direction, the second electrodes being located on the surface of the second semiconductor layer away from the light-emitting layer and connected to the second semiconductor layer, each second connection electrode being connected to a second electrode in a second electrode group through a plurality of second vias.

[0011] Optionally, the ratio of the maximum width of the orthographic projection of the first electrode on the first semiconductor layer to the maximum width of the orthographic projection of the groove on the first semiconductor layer is greater than 0.5 and less than or equal to 0.95.

[0012] Optionally, the distance between two adjacent first electrodes in the first direction is equal to the distance between two adjacent first electrodes in the second direction.

[0013] Optionally, the spacing between adjacent first electrodes and second electrodes in the first direction is equal to the spacing between adjacent first electrodes and second electrodes in the second direction.

[0014] Optionally, the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer.

[0015] On the other hand, a method for fabricating a light-emitting diode (LED) is provided, comprising: providing a light-emitting structure, the light-emitting structure including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially, the light-emitting structure having a plurality of grooves extending from a surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer; forming a first passivation layer on the light-emitting structure, the first passivation layer covering a surface of the second semiconductor layer away from the light-emitting layer; forming a connection electrode layer on the first passivation layer, the connection electrode layer including a plurality of strip-shaped first connection electrodes and a plurality of strip-shaped second connection electrodes alternately spaced in a first direction, the length directions of the first connection electrodes and the second connection electrodes being both in a second direction, the first direction and the first... The two directions intersect; each of the first connecting electrodes is electrically connected to the first semiconductor layer in the plurality of grooves through a plurality of first vias penetrating the first passivation layer, and each of the second connecting electrodes is electrically connected to the second semiconductor layer through a plurality of second vias penetrating the first passivation layer; a second passivation layer is formed on the connecting electrode layer, the second passivation layer covering the surface of the connecting electrode layer away from the light-emitting structure; a pad electrode layer is formed on the second passivation layer, the pad electrode layer including first pad electrodes and second pad electrodes spaced apart in the second direction, the first pad electrodes penetrating the second passivation layer and connecting to the plurality of first connecting electrodes, and the second pad electrodes penetrating the second passivation layer and connecting to the plurality of second connecting electrodes.

[0016] The beneficial effects of the technical solutions provided in this disclosure are:

[0017] In this embodiment, the connecting electrode layer includes a plurality of strip-shaped first connecting electrodes and a plurality of strip-shaped second connecting electrodes arranged alternately in a first direction. The length directions of the first and second connecting electrodes are both in the second direction, and the first and second directions intersect. Each first connecting electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first vias penetrating the first passivation layer, and each second connecting electrode is electrically connected to a second semiconductor layer through a plurality of second vias penetrating the first passivation layer. First pad electrodes penetrate the second passivation layer and are connected to the plurality of first connecting electrodes, and second pad electrodes penetrate the second passivation layer and are connected to the plurality of second connecting electrodes. In this way, without changing the surface area of ​​the light-emitting structure, the plurality of first and second connecting electrodes can be more uniformly distributed above the surface of the light-emitting structure. When current is conducted through the pad electrode layer to the alternately arranged strip-shaped first and second connecting electrodes, the probability of current accumulation in a certain area of ​​the connecting electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connecting electrode layer. In the connecting electrode layer, the current, passing through the first connecting electrode, multiple first vias and multiple grooves, as well as the second connecting electrode and multiple second vias, can more uniformly extend laterally into the first and second semiconductor layers of each region of the light-emitting structure. This improves the radiative recombination efficiency of charge carriers, thereby increasing the luminous efficiency of the LED. Furthermore, the improved lateral current extension capability can reduce the driving voltage of the LED and decrease the probability of LED breakdown failure due to current congestion, thus improving the reliability of the LED. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a top view of an LED provided in an embodiment of this disclosure;

[0020] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at line AA;

[0021] Figure 3 This is a top view of another LED provided in an embodiment of this disclosure;

[0022] Figure 4 This is a flowchart of an LED manufacturing method provided in an embodiment of this disclosure;

[0023] Figure 5This is a flowchart of another LED manufacturing method provided in this embodiment;

[0024] Figure 6 This is a top view of an LED manufacturing process provided in an embodiment of this disclosure;

[0025] Figure 7 This is a top view of an LED manufacturing process provided in an embodiment of this disclosure;

[0026] Figure 8 This is a top view of an LED control group provided in an embodiment of this disclosure.

[0027] Figure label:

[0028] x: First direction; y: Second direction; 10: Light-emitting structure; 11: First semiconductor layer; 12: Light-emitting layer; 13: Second semiconductor layer; 14: Groove; 21: First electrode; 22: Second electrode; 30: First passivation layer; 31: First via; 32: Second via; 41: First connecting electrode; 42: Second connecting electrode; 50: Second passivation layer; 51: Third via; 52: Fourth via; 61: First pad electrode; 62: Second pad electrode; 63: Notch; 70: Substrate. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0030] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” and similar terms mean that the elements or objects preceding “comprising” encompass the elements or objects listed following “comprising” and their equivalents, and do not exclude other elements or objects. The terms “connection” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0031] Figure 1 This is a top view of an LED provided in an embodiment of this disclosure. Figure 2 yes Figure 1A schematic diagram of the cross-sectional structure at line AA. (See also...) Figure 1 and Figure 2 The LED includes a light-emitting structure 10, a first passivation layer 30, a connection electrode layer, a second passivation layer 50, and a pad electrode layer. The light-emitting structure 10 includes a first semiconductor layer 11, a light-emitting layer 12, and a second semiconductor layer 13 stacked sequentially. The light-emitting structure 10 has a plurality of grooves 14 extending from the surface of the second semiconductor layer 13 away from the light-emitting layer 12 toward the first semiconductor layer 11.

[0032] The first passivation layer 30 covers the surface of the second semiconductor layer 13 away from the light-emitting layer 12. The connection electrode layer includes a plurality of strip-shaped first connection electrodes 41 and a plurality of strip-shaped second connection electrodes 42 arranged alternately in the first direction x. The length direction of the first connection electrodes 41 and the second connection electrodes 42 is the second direction y, and the first direction x and the second direction y intersect.

[0033] Each first connection electrode 41 is electrically connected to the first semiconductor layer 11 in the plurality of grooves 14 through a plurality of first through holes 31 penetrating the first passivation layer 30, and each second connection electrode 42 is electrically connected to the second semiconductor layer 13 through a plurality of second through holes 32 penetrating the first passivation layer 30.

[0034] The second passivation layer 50 covers the surface of the connecting electrode layer away from the light-emitting structure 10. The pad electrode layer is located on the surface of the second passivation layer 50 away from the connecting electrode layer. The pad electrode layer includes a first pad electrode 61 and a second pad electrode 62 arranged at intervals in the second direction y. The first pad electrode 61 penetrates the second passivation layer 50 and is connected to a plurality of first connecting electrodes 41. The second pad electrode 62 penetrates the second passivation layer 50 and is connected to a plurality of second connecting electrodes 42.

[0035] In this embodiment, with the surface area of ​​the light-emitting structure 10 remaining unchanged, the plurality of first connecting electrodes 41 and the plurality of second connecting electrodes 42 can be more evenly distributed above the surface of the light-emitting structure 10. When current is conducted through the pad electrode layer to the alternately spaced strip-shaped plurality of first connecting electrodes 41 and strip-shaped plurality of second connecting electrodes 42, the probability of current accumulation in certain areas of the connecting electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connecting electrode layer. In the connecting electrode layer, the current can then be more evenly laterally expanded to the first semiconductor layer 11 and the second semiconductor layer 13 in various regions of the light-emitting structure 10 through the first connecting electrodes 41, the plurality of first vias 31 and the plurality of grooves 14, and the second connecting electrodes 42 and the plurality of second vias 32, thereby improving the radiative recombination efficiency of charge carriers and thus improving the luminous efficiency of the LED. Furthermore, the improved lateral expansion capability of the current can reduce the driving voltage of the LED and reduce the probability of LED breakdown failure due to current congestion, thereby improving the reliability of the LED.

[0036] Optionally, the first direction x and the second direction y are perpendicular to each other.

[0037] For example, the first direction x is the row direction, and the second direction y is the column direction.

[0038] Optionally, the spacing D1 between two adjacent first connecting electrodes 41 in the first direction x is equal to the spacing D2 between two adjacent second connecting electrodes 42 in the first direction x. Here, the spacing refers to the distance between the center lines of two adjacent first connecting electrodes 41 in the length direction and the distance between the center lines of two adjacent second connecting electrodes 42 in the length direction. This allows the multiple first connecting electrodes 41 and multiple second connecting electrodes 42 to be more evenly distributed above the surface of the light-emitting structure 10, which is beneficial to improving the lateral spread capability of the current in the first connecting electrodes 41 and the second connecting electrodes 42.

[0039] Optionally, the spacing D1 between two adjacent first connecting electrodes 41 in the first direction x and the spacing D2 between two adjacent second connecting electrodes 42 in the first direction x are both 90μm to 110μm. This larger spacing between D1 and D2 reduces the probability of current congestion, thereby reducing the likelihood of LED breakdown failure and improving LED reliability.

[0040] For example, the distance D1 between two adjacent first connecting electrodes 41 in the first direction x and the distance D2 between two adjacent second connecting electrodes 42 in the first direction x can both be 90μm, 100μm or 110μm, etc.

[0041] Optionally, the distance D3 between adjacent first connecting electrodes 41 and second connecting electrodes 42 in the first direction x is 35 μm to 85 μm. If D3 is too small, the area of ​​the region where charge carriers radiative recombination occurs may be small, affecting the light-emitting area of ​​the LED; if D3 is too large, the current distribution may be too sparse, affecting the radiative recombination efficiency of charge carriers. Within this range, D3 can ensure that the area of ​​the region where charge carriers radiative recombination occurs is large, and while the light-emitting area of ​​the LED is large, the radiative recombination efficiency of charge carriers is effectively improved, thereby improving the luminous efficiency of the LED.

[0042] For example, the distance D3 between adjacent first connecting electrodes 41 and second connecting electrodes 42 in the first direction x can be 55 μm, 65 μm or 75 μm, etc.

[0043] Optionally, the LED also includes a substrate 70, which is located on the surface of the light-emitting structure 10 away from the connecting electrode layer. The substrate 70 can provide support for the light-emitting structure 10, ensuring better reliability of the LED.

[0044] Optionally, the substrate 70 may be a sapphire substrate. Sapphire substrates are transparent substrates with good light transmittance, and they also have high mechanical strength, making them easy to handle and clean. In other embodiments, the substrate 70 may also be a Si substrate, a SiC substrate, or a SiO2 substrate; this disclosure does not limit this.

[0045] For example, the substrate 70 may be a rectangular substrate. The surface of the substrate 70 may be a rectangular surface or a square surface.

[0046] Alternatively, the LED can be a red-yellow flip-chip LED.

[0047] For example, when the LED is a red-yellow LED, the substrate 70 is bonded to the light-emitting structure 10.

[0048] Optionally, the first semiconductor layer 11 is a P-type semiconductor layer, and the second semiconductor layer 13 is an N-type semiconductor layer. Since the N-type semiconductor layer has better current spreading performance, in this embodiment of the present disclosure, no transparent conductive layer and current blocking layer are provided between the second semiconductor layer 13 and the second connecting electrode. This still allows the current to have good lateral spreading capability, and is beneficial to reducing production costs and improving production efficiency.

[0049] For example, the first semiconductor layer 11 can be a P-type AlInP layer, and the second semiconductor layer 13 can be an N-type AlInP layer. For instance, the first semiconductor layer 11 is a Mg-doped AlInP layer, and the second semiconductor layer 13 is a Si-doped AlInP layer.

[0050] Optionally, the light-emitting layer 12 can be an undoped AlGaInP layer.

[0051] In other embodiments, the first semiconductor layer 11, the light-emitting layer 12, and the second semiconductor layer 13 may be made of different materials depending on the range of light emission wavelengths of the LED. For example, in a blue-green LED, the first semiconductor layer 11 may be an N-type GaN layer, the second semiconductor layer 13 may be a P-type GaN layer, and the light-emitting layer 12 may be composed of multiple pairs of alternately stacked InGaN layers and GaN layers. This disclosure does not limit this.

[0052] It should be noted that the materials of the first semiconductor layer 11 and the second semiconductor layer 13 in the above-mentioned light-emitting structure 10 are only an example. In other embodiments, the materials can be selected according to actual needs.

[0053] For example, the orthographic projection of the groove 14 onto the first semiconductor layer 11 is a circle.

[0054] For example, the diameter W0 of the groove 14 on the first semiconductor layer 11 is 30 μm.

[0055] likeFigure 1 and Figure 2 As shown, the LED also includes a first electrode layer, which includes a plurality of first electrode groups and a plurality of second electrode groups, which are arranged alternately at intervals in the first direction x.

[0056] For example, each first electrode group includes a plurality of first electrodes 21 spaced apart in the second direction y, each first electrode 21 being located in a groove 14 and connected to the first semiconductor layer 11, and each first connection electrode 41 being connected to the first electrode 21 in a first electrode group through a plurality of first through holes 31.

[0057] For example, each second electrode group includes a plurality of second electrodes 22 arranged at intervals in the second direction y. The second electrodes 22 are located on the surface of the second semiconductor layer 13 away from the light-emitting layer 12 and are connected to the second semiconductor layer 13. Each second connection electrode 42 is connected to the second electrode 22 in a second electrode group through a plurality of second through holes 32.

[0058] In this way, the connecting electrode layer can form a reliable electrical connection with the light-emitting structure 10 through the first electrode layer, and with the surface area of ​​the light-emitting structure 10 remaining unchanged, the multiple first electrodes 21 and multiple second electrodes 22 can be more evenly distributed on the surface of the light-emitting structure 10. The current can be more evenly extended laterally to each region of the light-emitting structure 10 through the first electrodes 21 and the second electrodes 22, so as to improve the radiative recombination efficiency of charge carriers and reduce the driving voltage of the LED.

[0059] For example, the orthographic projection of each first electrode group on the first semiconductor layer 11 is located inside the orthographic projection of a first connection electrode 41 on the first semiconductor layer 11, and each first connection electrode 41 is connected to the first electrode group through a plurality of first through holes 31. Furthermore, the centerline of the first electrode group in the second direction y coincides with the centerline of the corresponding first connection electrode 41 in the length direction.

[0060] For example, the orthographic projection of each second electrode group on the second semiconductor layer 13 is located inside the orthographic projection of a second connection electrode 42 on the second semiconductor layer 13, and each second connection electrode 42 is connected to the second electrode group through a plurality of second vias 32. Furthermore, the centerline of the second electrode group in the second direction y coincides with the centerline of the corresponding second connection electrode 42 in the length direction.

[0061] Optionally, the ratio of the maximum width W1 of the orthographic projection of the first electrode 21 onto the first semiconductor layer 11 to the maximum width W0 of the orthographic projection of the groove 14 onto the first semiconductor layer 11 is greater than 0.5 and less than or equal to 0.95. Here, the maximum width refers to the maximum value of the width in the direction parallel to the surface of the substrate 70. In this way, the first electrode 21 can form a good ohmic contact with the first semiconductor layer 11, and the current can be conducted to the light-emitting structure 10 through multiple first electrodes 21 to improve the carrier injection efficiency, thereby improving the carrier radiative recombination efficiency.

[0062] For example, the ratio of the maximum width W1 of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 to the maximum width W0 of the orthographic projection of the groove 14 on the first semiconductor layer 11 can be 0.6, 0.7 or 0.8, etc.

[0063] For example, the maximum width W1 of the orthographic projection of the first electrode 21 onto the first semiconductor layer 11 is greater than 15 μm and less than or equal to 30 μm. If W1 is too small, the first electrode 21 may not be able to form a good ohmic contact with the first semiconductor layer 11, affecting the carrier injection efficiency; if W1 is too large, the first electrode 21 may connect with the second semiconductor layer 13, causing the LED to short-circuit and fail. Within this range of W1, the first electrode 21 can form a good ohmic contact with the first semiconductor layer 11. When current is conducted to the light-emitting structure 10 through multiple first electrodes 21, the carrier injection efficiency can be improved, thereby improving the radiative recombination efficiency of the carriers. Furthermore, the probability of the LED short-circuiting due to the contact between the first electrode 21 and the second semiconductor layer 13 can be reduced, thus ensuring better LED reliability.

[0064] For example, the maximum width W1 of the orthogonal projection of the first electrode 21 onto the first semiconductor layer 11 can be 17μm, 22μm, or 27μm, etc.

[0065] In this embodiment of the disclosure, the orthogonal projection of the first electrode 21 onto the first semiconductor layer 11 is circular, that is, the first electrode 21 is cylindrical, and the maximum width W1 is the diameter of the orthogonal projection of the first electrode 21 onto the first semiconductor layer 11.

[0066] For example, the first electrode 21 corresponds one-to-one with the groove 14 and is arranged concentrically.

[0067] In other embodiments, the orthographic projection of the first electrode 21 onto the first semiconductor 11 can be a triangle, a rectangle, or a hexagon, etc., that is, the first electrode 21 can be a triangular prism, a cuboid, or a hexagonal prism, etc., and this disclosure does not limit it.

[0068] Optionally, the distance between two adjacent first electrodes 21 in the first direction x is equal to the distance D4 between two adjacent first electrodes 21 in the second direction y. Since the centerline of the first electrode group coincides with the centerline of the corresponding first connecting electrode 41 in the length direction, the distance between two adjacent first electrodes 21 in the first direction x is equal to the distance D1 between two adjacent first connecting electrodes 41 in the first direction x, and D1 equals D4.

[0069] That is, the orthogonal projections of the multiple first electrodes 21 onto the first semiconductor layer 11 are arranged in an equally spaced array. In this way, the current can be effectively conducted to the first semiconductor layer 11 through the multiple first electrodes 21, thereby improving the lateral spread capability of the current and improving the uniformity of the current distribution.

[0070] Optionally, the spacing D4 between two adjacent first electrodes 21 in the first direction x and the spacing D4 between two adjacent first electrodes 21 in the second direction y are both 90 to 110 μm. This ensures that there is sufficient space between two adjacent first electrodes 21 to accommodate the second electrode 22, thereby effectively improving the lateral current spread capability.

[0071] In other embodiments, the distance between two adjacent first electrodes 21 in the first direction x may be greater than or less than the distance D4 between two adjacent first electrodes 21 in the second direction y, and this disclosure does not limit this.

[0072] Optionally, the maximum width W2 of the orthographic projection of the second electrode 22 onto the second semiconductor layer 13 is greater than 15 μm and less than or equal to 30 μm. In this way, the second electrode 22 can form a good ohmic contact with the second semiconductor layer 13, and when the current is conducted to the light-emitting structure 10 through multiple second electrodes 22, the carrier injection efficiency can be improved, thereby improving the radiative recombination efficiency of the carriers.

[0073] For example, the maximum width W2 of the orthogonal projection of the second electrode 22 onto the second semiconductor layer 13 can be 17 μm, 22 μm, or 27 μm, etc.

[0074] For example, the orthographic projection of the second electrode 22 onto the second semiconductor layer 13 is circular, and the second electrode 22 is cylindrical.

[0075] In other embodiments, the orthogonal projection of the second electrode 22 onto the second semiconductor 13 can be a triangle, a rectangle, or a hexagon, etc., that is, the second electrode 22 can be a triangular prism, a cuboid, or a hexagonal prism, etc., and this disclosure does not limit it.

[0076] Optionally, the distance between adjacent first electrodes 21 and second electrodes 22 in the first direction x is equal to the distance D5 between adjacent first electrodes 21 and second electrodes 22 in the second direction y. Since the centerline of the first electrode group coincides with the centerline of the corresponding first connecting electrode 41 in the length direction, and the centerline of the second electrode group coincides with the centerline of the corresponding second connecting electrode 42 in the length direction, the distance between adjacent first electrodes 21 and second electrodes 22 in the first direction x is equal to the distance D3 between adjacent first connecting electrodes 41 and second connecting electrodes 42 in the first direction x, where D3 equals D5.

[0077] That is, the multiple first electrodes 21 and multiple second electrodes 22 can be arranged in an array with equal spacing. This is beneficial for the current to be evenly distributed in each region of the light-emitting structure 10 through the first electrodes 21 and the second electrodes 22, thereby improving the radiative recombination efficiency of charge carriers.

[0078] Optionally, the spacing between adjacent first electrodes 21 and second electrodes 22 in the first direction x and the spacing D5 between adjacent first electrodes 21 and second electrodes 22 in the second direction y are both 35 μm to 85 μm. This ensures a larger area for carrier radiative recombination, resulting in a larger light-emitting area for the LED, while effectively improving the lateral current expansion capability, reducing the probability of current congestion, thereby improving the luminous efficiency of the LED, reducing the driving voltage of the LED, and improving the reliability of the LED.

[0079] In other embodiments, the distance between adjacent first electrodes 21 and second electrodes 22 in the first direction x may be greater than or less than the distance D5 between adjacent first electrodes 21 and second electrodes 22 in the second direction y, and this disclosure does not limit this.

[0080] Optionally, the material of the first electrode layer includes at least one of Cr, Al, Ti, Ni, Pt, Au, AuGeNi alloy and AuBe alloy.

[0081] For example, the first passivation layer 30 also covers the sidewalls of the light-emitting structure 10.

[0082] like Figure 2 As shown, the surface of the first passivation layer 30 furthest from the light-emitting structure 10 is flush with the surface. That is, the distance between the surface of the first passivation layer 30 furthest from the light-emitting structure 10 and the surface of the substrate 70 is the same. This helps improve the flatness of the surface where the LED's pad electrode layer is located, allowing the LED to be placed more stably during the die bonding process and reducing the probability of the LED tilting or tipping over. Furthermore, it reduces the likelihood of gaps between the solder paste and the first passivation layer 30 during die bonding, which could affect die bonding reliability, thereby improving the reliability of LED die bonding.

[0083] likeFigure 1 and Figure 2 As shown, the first passivation layer 30 has a plurality of first through holes 31 exposing the first electrode 21 and a plurality of second through holes 32 exposing the second electrode 22.

[0084] Optionally, the first passivation layer 30 can be at least one of SiO2, Al2O3, SiN, or SiON. These materials offer good protection for the LED and also have good light transmittance, reducing light absorption and improving the LED's light extraction efficiency.

[0085] In other embodiments, the first passivation layer 30 can be a distributed Bragg reflection (DBR) layer. This not only serves as passivation but also reflects light emitted from the light-emitting structure 10 toward the first passivation layer 30 back to the light-emitting structure 10, thereby improving the light extraction efficiency of the LED.

[0086] For example, the DBR layer includes multiple SiO2 layers and multiple TiO2 layers stacked in a periodic alternating manner. The number of periods in the DBR layer can be from 20 to 50. For instance, the DBR layer may include 30 SiO2 layers and 30 TiO2 layers stacked in a periodic alternating manner.

[0087] For example, each first connecting electrode 41 is connected to the first electrode group through a plurality of first through holes 31, and each second connecting electrode 42 is connected to the second electrode group through a plurality of second through holes 32.

[0088] Optionally, the material connecting the electrode layer includes at least one of Cr, Al, Ti, Ni, Pt, and Au.

[0089] For example, the second passivation layer 50 also covers the sidewalls of the connecting electrode layer. The second passivation layer 50 can prevent short-circuit failures of the first pad electrode 61 and the second connecting electrode 42, and the second pad electrode 62 and the first connecting electrode 41, ensuring good LED reliability. The first pad electrode 61 and the second pad electrode 62 facilitate connection with external pads. Current can be conducted from the first pad electrode 61 to the first connecting electrode 41, and from the second pad electrode 62 to the second connecting electrode 42. Through the cooperation of the pad electrode layer, the connecting electrode layer and the first electrode layer, it can be ensured that the current can be well extended laterally to various areas of the light-emitting structure 10.

[0090] like Figure 1 and Figure 2As shown, the second passivation layer 50 has a plurality of third vias 51 exposing the first connection electrode 41 and a plurality of fourth vias 52 exposing the second connection electrode 42. The orthographic projection of each third via 51 on the first semiconductor layer 11 is located inside the orthographic projection of a first connection electrode 41 on the first semiconductor layer 11, and the orthographic projection of each fourth via 52 on the second semiconductor layer 13 is located inside the orthographic projection of a second connection electrode 42 on the second semiconductor layer 13.

[0091] Optionally, the second passivation layer 50 can be at least one of SiO2 layer, Al2O3 layer, SiN layer or SiON layer.

[0092] In other embodiments, the second passivation layer 50 may be a DBR layer. For example, the second passivation layer 50 may include a plurality of SiO2 layers and a plurality of TiO2 layers stacked in a periodic alternating manner.

[0093] Optionally, the first pad electrode 61 is connected to the first connection electrode 41 through a plurality of third vias 51. The orthographic projection of each third via 51 on the first semiconductor layer 11 is located between the orthographic projections of the two first electrodes 21 closest to the first pad electrode 61 in a first electrode group on the first semiconductor layer 11.

[0094] Optionally, the second pad electrode 62 is connected to the second connection electrode 42 through a plurality of fourth through holes 52, and the orthographic projection of each fourth through hole 52 on the second semiconductor layer 13 is located between the orthographic projections of the two second electrodes 22 closest to the second pad electrode 62 in a second electrode group on the second semiconductor layer 13.

[0095] Optionally, the material of the pad electrode layer includes at least one of Cr, Al, Ti, Ni, Pt, Au and Sn.

[0096] like Figure 1 As shown, the second pad electrode 62 has a notch 63 at its edge. The notch 63 can effectively distinguish the second pad electrode 62 from the first pad electrode 61.

[0097] For example, the first pad electrode 61 is close to the lower side of the LED, and the second pad electrode 62 is close to the upper side of the LED.

[0098] In this embodiment of the disclosure, each first electrode group includes five first electrodes 21, and each second electrode group includes four second electrodes 22, with the first electrodes 21 being disposed closest to the edge of the LED. The connecting electrode layer is provided with six strip-shaped first connecting electrodes 41 and five strip-shaped second connecting electrodes 42, wherein the length of the first connecting electrodes 41 is greater than the length of the second connecting electrodes 42.

[0099] In other embodiments, the first electrode 21, the second electrode 22, the first connecting electrode 41, the second connecting electrode 42, the first pad electrode 61, and the second pad electrode 62 can be configured according to the size of the LED.

[0100] Figure 3 This is a top view of another LED provided in an embodiment of this disclosure. Figure 3 and Figure 1 The difference is that, Figure 3 Each first electrode group includes four first electrodes 21, and each second electrode group includes five second electrodes 22, with the second electrodes 22 positioned closest to the edge of the LED. The connecting electrode layer comprises five strip-shaped first connecting electrodes 41 and six strip-shaped second connecting electrodes 42, wherein the length of the first connecting electrodes 41 is shorter than the length of the second connecting electrodes 42. Figure 3 The first pad electrode 61 is close to the upper side of the LED, and the second pad electrode 62 is close to the lower side of the LED. A notch 63 is provided at the edge of the first pad electrode 61.

[0101] Figure 4 This is a flowchart illustrating a method for manufacturing an LED according to an embodiment of this disclosure. Figure 4 As shown, the preparation method includes:

[0102] In step S1001, a light-emitting structure is provided.

[0103] The light-emitting structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially, and the light-emitting structure has a plurality of grooves extending from the surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer.

[0104] In step S1002, a first passivation layer is formed on the light-emitting structure.

[0105] The first passivation layer covers the surface of the second semiconductor layer away from the light-emitting layer.

[0106] In step S1003, a connection electrode layer is formed on the first passivation layer.

[0107] The connecting electrode layer includes a plurality of strip-shaped first connecting electrodes and a plurality of strip-shaped second connecting electrodes arranged alternately in a first direction. The length directions of the first connecting electrodes and the second connecting electrodes are both in the second direction, and the first direction and the second direction intersect. Each first connecting electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first through holes penetrating the first passivation layer, and each second connecting electrode is electrically connected to a second semiconductor layer through a plurality of second through holes penetrating the first passivation layer.

[0108] In step S1004, a second passivation layer is formed on the connecting electrode layer.

[0109] The second passivation layer covers the surface of the electrode layer that is away from the light-emitting structure.

[0110] In step S1005, a pad electrode layer is formed on the second passivation layer.

[0111] The pad electrode layer includes a first pad electrode and a second pad electrode arranged at intervals in a second direction. The first pad electrode penetrates the second passivation layer and is connected to a plurality of first connection electrodes, and the second pad electrode penetrates the second passivation layer and is connected to a plurality of second connection electrodes.

[0112] In this embodiment, with the surface area of ​​the light-emitting structure remaining unchanged, the plurality of first connecting electrodes and the plurality of second connecting electrodes can be more uniformly and evenly distributed above the surface of the light-emitting structure. When current is conducted through the pad electrode layer to the alternately spaced strip-shaped plurality of first connecting electrodes and strip-shaped plurality of second connecting electrodes, the probability of current accumulation in certain areas of the connecting electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connecting electrode layer. In the connecting electrode layer, the current can then be more uniformly and laterally expanded to the first semiconductor layer and the second semiconductor layer in various regions of the light-emitting structure through the first connecting electrodes, the plurality of first vias and the plurality of grooves, as well as the second connecting electrodes and the plurality of second vias, thereby improving the radiative recombination efficiency of charge carriers and thus improving the luminous efficiency of the LED. Furthermore, the improved lateral expansion capability of the current can reduce the driving voltage of the LED and reduce the probability of LED breakdown failure due to current congestion, thereby improving the reliability of the LED.

[0113] Figure 5 This is a flowchart of another LED fabrication method provided in this disclosure. Figure 5 As shown, the preparation method includes:

[0114] In step S2001, a light-emitting structure is formed on the substrate.

[0115] Alternatively, the substrate can be a sapphire substrate.

[0116] For example, the sapphire substrate can be pretreated by placing it in a metal-organic chemical vapor deposition (MOCVD) reaction chamber and baking it for 12 to 18 minutes to clean it.

[0117] Figure 6 This is a top view of an LED manufacturing process provided in an embodiment of this disclosure. Figure 6As shown, the light-emitting structure 10 includes a first semiconductor layer 11, a light-emitting layer 12, and a second semiconductor layer 13 stacked sequentially. The light-emitting structure 10 has a plurality of grooves 14 extending from the surface of the second semiconductor layer 13 away from the light-emitting layer 12 toward the first semiconductor layer 11.

[0118] For example, a photoresist structure can be obtained on the surface of the second semiconductor layer away from the light-emitting layer through processes such as photoresist coating, exposure, and development. Using the photoresist structure as a mask, the surface of the second semiconductor layer away from the light-emitting layer can be etched by methods such as inductively coupled plasma (ICP) etching. The etching depth extends from the surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer. After removing the photoresist structure, multiple grooves are formed that expose the first semiconductor layer.

[0119] In step S2002, a first electrode layer is formed on the light-emitting structure.

[0120] Figure 7 This is a top view of an LED manufacturing process provided in an embodiment of this disclosure. Figure 7 As shown, the first electrode layer includes multiple first electrode groups and multiple second electrode groups, which are alternately arranged in the first direction x. Each first electrode group includes multiple first electrodes 21 spaced apart in the second direction y, each first electrode 21 located in a recess 14 and connected to the first semiconductor layer 11. Each second electrode group includes multiple second electrodes 22 spaced apart in the second direction y, the second electrodes 22 located on the surface of the second semiconductor layer 13 away from the light-emitting layer 12 and connected to the second semiconductor layer 13. The first direction x and the second direction y intersect.

[0121] For example, a photoresist structure can be obtained on the surface of the light-emitting structure 10 away from the substrate 70 by processes such as photoresist coating, exposure, and development. The first electrode layer is formed by electron beam evaporation and stripping processes using the photoresist structure as a mask.

[0122] In other embodiments, the first electrode and the second electrode can be fabricated using different patterning processes.

[0123] In step S2003, a first passivation layer is formed on the first electrode layer.

[0124] For example, a first passivation layer can be deposited on the entire surface of the first electrode layer using physical vapor deposition or electron beam evaporation. A photoresist structure is then obtained on the first passivation layer through processes such as photoresist coating, exposure, and development. Using the photoresist structure as a mask, the first passivation layer is etched by methods such as ICP etching to remove the photoresist structure and form the first passivation layer. The first passivation layer covers the surface of the first electrode layer away from the light-emitting structure and the sidewall of the first electrode layer, as well as the surface of the light-emitting structure and the sidewall of the light-emitting structure. The first passivation layer has multiple first vias exposing the first electrode and multiple second vias exposing the second electrode.

[0125] Optionally, before forming the first passivation layer, the light-emitting structure can be subjected to deep etching (ISO) lithography to form cleavage paths that expose the substrate.

[0126] In step S2004, a connection electrode layer is formed on the first passivation layer.

[0127] For example, a photoresist structure can be obtained on the surface of the first passivation layer by photoresist coating, exposure, development and other processes. Using the photoresist structure as a mask, a connection electrode layer is formed by electron beam evaporation and stripping processes. The connection electrode layer includes a plurality of strip-shaped first connection electrodes and a plurality of strip-shaped second connection electrodes arranged alternately in a first direction. The length direction of the first connection electrodes and the length direction of the second connection electrodes are both in the second direction. Each first connection electrode is connected to the first electrode group through a plurality of first through holes, and each second connection electrode is connected to the second electrode group through a plurality of second through holes.

[0128] In step S2005, a second passivation layer is formed on the connecting electrode layer.

[0129] For example, an initial second passivation layer can be deposited on the entire surface of the connecting electrode layer using physical vapor deposition or electron beam evaporation. A photoresist structure is then obtained on the initial second passivation layer through processes such as photoresist coating, exposure, and development. Using the photoresist structure as a mask, the initial second passivation layer is etched using methods such as ICP etching to remove the photoresist structure and form the second passivation layer. The second passivation layer covers the surface of the connecting electrode layer away from the light-emitting structure and the sidewalls of the connecting electrode layer. The second passivation layer has multiple third vias exposing the first connecting electrode and multiple fourth vias exposing the second connecting electrode.

[0130] In step S2006, a pad electrode layer is formed on the second passivation layer.

[0131] For example, a photoresist structure can be obtained on the surface of the second passivation layer by photoresist coating, exposure, development and other processes. Using the photoresist structure as a mask, a pad electrode layer is formed by electron beam evaporation and stripping processes. The pad electrode layer includes a first pad electrode and a second pad electrode arranged at intervals in the second direction. The first pad electrode is connected to the first connection electrode through a plurality of third through holes, and the second pad electrode is connected to the second connection electrode through a plurality of fourth through holes.

[0132] Optionally, after completing step S2006, the substrate can be further cleaved along the cutting path using a scribing process to obtain an LED.

[0133] Optionally, the structure, shape, width, material, number of cycles, and quantity of each layer can be found in [reference needed]. Figures 1 to 3 Related embodiments are omitted in detail here.

[0134] Figure 8 This is a top view of an LED control group provided in an embodiment of this disclosure. Figure 8 As shown, the LED includes a substrate 70', a light-emitting structure 10', a connecting electrode layer, a second passivation layer 50', and a pad electrode layer stacked sequentially. The light-emitting structure 10' includes a first semiconductor layer 11', a light-emitting layer 12', and a second semiconductor layer 13' stacked sequentially. The light-emitting structure 10' has a groove 14' extending from the surface of the second semiconductor layer 13' away from the light-emitting layer 12' toward the first semiconductor layer 11'.

[0135] The connecting electrode layer includes a first connecting electrode 41' and a second connecting electrode 42'. The first connecting electrode 41' is located in the groove 14' and connected to the first semiconductor layer 11', and the second connecting electrode 42' is located on the surface of the second semiconductor layer 13' and connected to the second semiconductor layer 13'. Both the first connecting electrode 41' and the second connecting electrode 42' consist of a single strip electrode extending in the first direction x' and multiple strip electrodes extending in the second direction y'.

[0136] The second passivation layer 50' has a plurality of third through holes 51' exposing the first connecting electrode 41' and a plurality of fourth through holes 52' exposing the second connecting electrode 42'.

[0137] The pad electrode layer includes a first pad electrode 61' and a second pad electrode 62' arranged at intervals in the second direction y'. The first pad electrode 61' is connected to the first connecting electrode 41' through a plurality of third through holes 51', and the second pad electrode 62' is connected to the second connecting electrode 42' through a plurality of fourth through holes 52'.

[0138] The voltage, brightness, and electrostatic breakdown voltage of the LED provided in the embodiments of this disclosure are described below by way of example. In the following text, "experimental group" refers to...Figure 1 The LED in the relevant embodiments, the two fingers of the experimental group Figure 3 In the relevant embodiments, the LED and the control group refer to... Figure 8 The difference between the control group and the experimental group in the related embodiments of the LED is that the LED in the control group does not have a first electrode layer, and the shape of the connecting electrode layer is different from that in the experimental group. Figure 1 , Figure 3 different.

[0139] Multiple control groups and multiple experimental groups with the same emission wavelength and photoluminescence value were tested. The voltage and brightness of the LEDs were measured under a 200mA current condition, and the electrostatic breakdown voltage of the LEDs was measured using an electrostatic discharge simulator. Table 1 shows the test results for the control and experimental groups.

[0140] Table 1 Test Results

[0141]

[0142] Testing revealed that under a 200mA current condition, the voltage of the control group was 3.24V, while the voltage of experimental group one was 2.60V, a decrease of 0.64V compared to the control group, representing a voltage reduction of approximately 19.7%. The voltage of experimental group two was 2.62V, also lower than the control group. This indicates a reduction in the LED driving voltage in this embodiment of the present disclosure.

[0143] The luminous flux of the control group was 23.64 lm and the luminous intensity was 6974.68 mcd. The luminous flux of experimental group one was 27.99 lm and the luminous intensity was 8237.25 mcd, representing an increase of 4.35 lm and approximately 18.4% compared to the control group. The luminous flux of experimental group two was 29.49 lm and the luminous intensity was 8691.78 mcd, both showing increases compared to the control group.

[0144] The electrostatic breakdown voltage of the control group was 6500V, the electrostatic breakdown voltage of experimental group 1 was 9500V, and the electrostatic breakdown voltage of experimental group 2 was 9000V. The electrostatic breakdown voltage of both experimental groups was higher than that of the control group.

[0145] Therefore, the LEDs provided in this disclosure can improve the luminous efficiency and reliability of LEDs and reduce the driving voltage of LEDs.

[0146] The above description is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A light-emitting diode, characterized in that, It includes a light-emitting structure (10), a first passivation layer (30), a connecting electrode layer, a second passivation layer (50), and a pad electrode layer. The light-emitting structure (10) includes a first semiconductor layer (11), a light-emitting layer (12), and a second semiconductor layer (13) stacked sequentially. The first semiconductor layer (11) is a P-type semiconductor layer, and the second semiconductor layer (13) is an N-type semiconductor layer. The light-emitting structure (10) has a plurality of grooves (14) extending from the surface of the second semiconductor layer (13) away from the light-emitting layer (12) toward the first semiconductor layer (11). The first passivation layer (30) covers the surface of the second semiconductor layer (13) away from the light-emitting layer (12); The connecting electrode layer includes a plurality of strip-shaped first connecting electrodes (41) and a plurality of strip-shaped second connecting electrodes (42) arranged alternately in a first direction. The length direction of the first connecting electrodes (41) and the second connecting electrodes (42) is the second direction, and the first direction and the second direction intersect. Each of the first connection electrodes (41) is electrically connected to the first semiconductor layer (11) in the plurality of grooves (14) through a plurality of first vias (31) penetrating the first passivation layer (30), and each of the second connection electrodes (42) is electrically connected to the second semiconductor layer (13) through a plurality of second vias (32) penetrating the first passivation layer (30); The second passivation layer (50) covers the surface of the connecting electrode layer away from the light-emitting structure (10); The pad electrode layer is located on the surface of the second passivation layer (50) away from the connection electrode layer. The pad electrode layer includes a first pad electrode (61) and a second pad electrode (62) arranged at intervals in the second direction. The first pad electrode (61) penetrates the second passivation layer (50) and is connected to the plurality of first connection electrodes (41). The second pad electrode (62) penetrates the second passivation layer (50) and is connected to the plurality of second connection electrodes (42). The light-emitting diode further includes a first electrode layer, the first electrode layer including a plurality of first electrode groups and a plurality of second electrode groups, the plurality of first electrode groups and the plurality of second electrode groups being arranged alternately at intervals in the first direction; Each first electrode group includes a plurality of first electrodes (21) spaced apart in the second direction. Each first electrode (21) is located in a groove (14) and is in ohmic contact with the first semiconductor layer (11). Each first electrode (21) and each groove (14) correspond one-to-one. Each first connection electrode (41) is connected to the first electrode (21) in a first electrode group through a plurality of first through holes (31). The ratio of the maximum width of the orthographic projection of the first electrode (21) on the first semiconductor layer (11) to the maximum width of the orthographic projection of the corresponding groove (14) on the first semiconductor layer (11) is greater than 0.5 and less than or equal to 0.

95. The maximum width of the orthographic projection of the first electrode (21) on the first semiconductor layer (11) is greater than 15 μm and less than or equal to 30 μm. Each second electrode group includes a plurality of second electrodes (22) spaced apart in the second direction, the second electrodes (22) being located on the surface of the second semiconductor layer (13) away from the light-emitting layer (12) and connected to the second semiconductor layer (13), and each second connection electrode (42) being connected to the second electrode (22) in a second electrode group through a plurality of second vias (32).

2. The light-emitting diode according to claim 1, characterized in that, The distance between two adjacent first connecting electrodes (41) in the first direction is equal to the distance between two adjacent second connecting electrodes (42) in the first direction.

3. The light-emitting diode according to claim 2, characterized in that, The spacing between two adjacent first connecting electrodes (41) in the first direction and the spacing between two adjacent second connecting electrodes (42) in the first direction are both 90 μm to 110 μm.

4. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The spacing between adjacent first connecting electrodes (41) and second connecting electrodes (42) in the first direction is 35 μm to 85 μm.

5. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The distance between two adjacent first electrodes (21) in the first direction is equal to the distance between two adjacent first electrodes (21) in the second direction.

6. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The distance between adjacent first electrodes (21) and second electrodes (22) in the first direction is equal to the distance between adjacent first electrodes (21) and second electrodes (22) in the second direction.

7. A method for fabricating a light-emitting diode, characterized in that, include: A light-emitting structure (10) is provided, the light-emitting structure (10) comprising a first semiconductor layer (11), a light-emitting layer (12) and a second semiconductor layer (13) stacked sequentially, the first semiconductor layer (11) being a P-type semiconductor layer and the second semiconductor layer (13) being an N-type semiconductor layer, the light-emitting structure (10) having a plurality of grooves (14) extending from the surface of the second semiconductor layer (13) away from the light-emitting layer (12) toward the first semiconductor layer (11). A first passivation layer (30) is formed on the light-emitting structure (10), and the first passivation layer (30) covers the surface of the second semiconductor layer (13) away from the light-emitting layer (12); A connection electrode layer is formed on the first passivation layer (30). The connection electrode layer includes a plurality of strip-shaped first connection electrodes (41) and a plurality of strip-shaped second connection electrodes (42) arranged alternately in a first direction. The length directions of the first connection electrodes (41) and the second connection electrodes (42) are both in the second direction, and the first direction and the second direction intersect. Each first connection electrode (41) is electrically connected to a first semiconductor layer (11) in a plurality of grooves (14) through a plurality of first through holes (31) penetrating the first passivation layer (30). Each second connection electrode (42) is electrically connected to a second semiconductor layer (13) through a plurality of second through holes (32) penetrating the first passivation layer (30). A second passivation layer (50) is formed on the connecting electrode layer, and the second passivation layer (50) covers the surface of the connecting electrode layer away from the light-emitting structure (10); A pad electrode layer is formed on the second passivation layer (50). The pad electrode layer includes a first pad electrode (61) and a second pad electrode (62) spaced apart in the second direction. The first pad electrode (61) penetrates the second passivation layer (50) and is connected to the plurality of first connection electrodes (41). The second pad electrode (62) penetrates the second passivation layer (50) and is connected to the plurality of second connection electrodes (42). A first electrode layer is formed, comprising a plurality of first electrode groups and a plurality of second electrode groups. The plurality of first electrode groups and the plurality of second electrode groups are alternately spaced in a first direction. Each first electrode group includes a plurality of first electrodes (21) spaced apart in a second direction. Each first electrode (21) is located in a groove (14) and is in ohmic contact with the first semiconductor layer (11). Each first electrode (21) corresponds one-to-one with each groove (14). Each first connecting electrode (41) is connected to a first electrode (21) in a first electrode group through a plurality of first through holes (31). The orthographic projection of each first electrode group on the first semiconductor layer (11) is located inside the orthographic projection of a first connecting electrode (41) on the first semiconductor layer (11). The orthographic projection of the first electrode (21) on the first semiconductor layer (11) is... The ratio of the maximum width of the shadow to the maximum width of the orthographic projection of the corresponding groove (14) on the first semiconductor layer (11) is greater than 0.5 and less than or equal to 0.

95. The maximum width of the orthographic projection of the first electrode (21) on the first semiconductor layer (11) is greater than 15 μm and less than or equal to 30 μm. Each second electrode group includes a plurality of second electrodes (22) spaced apart in the second direction. The second electrodes (22) are located on the surface of the second semiconductor layer (13) away from the light-emitting layer (12) and connected to the second semiconductor layer (13). Each second connecting electrode (42) is connected to the second electrode (22) in a second electrode group through a plurality of second vias (32). The orthographic projection of each second electrode group on the second semiconductor layer (13) is located inside the orthographic projection of a second connecting electrode (42) on the second semiconductor layer (13).

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