Display device

Abstract

The invention relates to a display device. The display device includes: a first substrate; a light emitting diode layer throughout the first substrate and including a light emitting diode configured to emit light of a wavelength in a first wavelength band; a color conversion layer on the light emitting diode layer and including a quantum dot layer or a light transmitting layer overlapping the light emitting diode; a second substrate throughout the first substrate such that the light emitting diode layer and the color conversion layer are between the first substrate and the second substrate, and including a groove overlapping the light emitting diode in a surface of the second substrate facing the first substrate; and an ion supply layer filling the trench.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0091350 filed on July 13, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] Aspects of one or more embodiments relate to a display device. Background Art

[0004] In general, a display device has a plurality of pixels. In a full-color display device, the plurality of pixels may be configured to emit light of different colors. For this purpose, at least some of the pixels in the display device include a color converter. Accordingly, light of a wavelength in a first wavelength band generated from a light emitting portion of some pixels is converted into light of a wavelength in a second wavelength band while passing through a corresponding color converter, and then emitted to the outside.

[0005] The above information disclosed in this Background section is only for enhancement of understanding of the background art and therefore, the information discussed in this Background section does not necessarily constitute prior art. Summary of the invention

[0006] Aspects of one or more embodiments relate to a display device, and, for example, to a display device capable of displaying a relatively high-quality image.

[0007] However, since light efficiency is low in the display device according to the related art, a high-quality image may not be displayed thereon.

[0008] Aspects of one or more embodiments include a display device capable of displaying relatively high-quality images. However, these characteristics are only examples, and embodiments according to the present disclosure are not limited thereto.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0010] According to one or more embodiments, a display device includes: a first substrate; a light emitting diode layer extending over the first substrate and including a light emitting diode configured to emit light of a wavelength in a first wavelength band; a color conversion layer on the light emitting diode layer and including a quantum dot layer or a light-transmitting layer overlapping the light emitting diode; a second substrate extending over the first substrate such that the light emitting diode layer and the color conversion layer are between the first substrate and the second substrate, and including a groove in a surface of the second substrate facing the first substrate, the groove overlapping the light emitting diode; and an ion supply layer filling the groove.

[0011] According to some embodiments, the ion supply layer may include a polymer having a carboxyl group.

[0012] According to some embodiments, the ion supply layer may include polyacrylic acid.

[0013] According to some embodiments, the display device may further include a sealing member between the first substrate and the second substrate.

[0014] According to some embodiments, a cavity may be defined between the first substrate and the second substrate by the sealing member.

[0015] According to some embodiments, the color conversion layer and the ion supply layer may face each other with the cavity between the color conversion layer and the ion supply layer.

[0016] According to some embodiments, the sealing member may include a photocurable resin.

[0017] According to some embodiments, a surface of the second substrate facing the first substrate may be spaced apart from a surface of the color conversion layer facing the second substrate in a thickness direction.

[0018] According to some embodiments, a distance between a surface of the ion supply layer facing the first substrate and a surface of the color conversion layer facing the second substrate may be greater than or equal to a distance between a surface of the second substrate facing the first substrate and a surface of the color conversion layer facing the second substrate.

[0019] According to one or more embodiments, a display device includes: a first substrate; a light-emitting diode layer extending over the first substrate and including a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode, each configured to emit light of a wavelength in a first wavelength band; an encapsulation layer on the light-emitting diode layer; a dam layer on the encapsulation layer and defining a first dam opening overlapping the first light-emitting diode, a second dam opening overlapping the second light-emitting diode, and a third dam opening overlapping the third light-emitting diode; a first quantum dot layer in the first dam opening and configured to convert light of a wavelength in the first wavelength band into light of a wavelength in the second wavelength band; a second quantum dot layer in the first dam opening A second dam opening is in the second substrate and is configured to convert light of a wavelength in the first wavelength band into light of a wavelength in the third wavelength band; a second substrate, extending over the first substrate so that the light-emitting diode layer, the encapsulation layer and the dam layer are between the first substrate and the second substrate, wherein the second substrate includes a first groove overlapping the first light-emitting diode, a second groove overlapping the second light-emitting diode and a third groove overlapping the third light-emitting diode, each of the first groove, the second groove and the third groove being defined in a surface of the second substrate facing the first substrate; and an ion supply layer, including a first organic material layer filling the first groove, a second organic material layer filling the second groove and a third organic material layer filling the third groove.

[0020] According to some embodiments, the ion supply layer may include a polymer having a carboxyl group.

[0021] According to some embodiments, the ion supply layer may include polyacrylic acid.

[0022] According to some embodiments, the display device may further include a sealing member between the first substrate and the second substrate, wherein a cavity may be defined between the first substrate and the second substrate by the sealing member.

[0023] According to some embodiments, the cavity may be between the first quantum dot layer and the first organic material layer and between the second quantum dot layer and the second organic material layer.

[0024] According to some embodiments, the display device may further include a light-transmitting layer in the third bank opening and configured to transmit light of a wavelength in the first wavelength band.

[0025] According to some embodiments, the first wavelength band may be in the range of 450 nm (or about 450 nm) to 495 nm (or about 495 nm), the second wavelength band may be in the range of 625 nm (or about 625 nm) to 780 nm (or about 780 nm), and the third wavelength band may be in the range of 495 nm (or about 495 nm) to 570 nm (or about 570 nm). The light of the first wavelength band is blue light, the light of the second wavelength band is red light, and the light of the third wavelength band is green light.

[0026] According to some embodiments, a thickness of the third organic material layer may be different from a thickness of the first organic material layer and a thickness of the second organic material layer.

[0027] According to some embodiments, a thickness of the third organic material layer may be greater than a thickness of the first organic material layer and a thickness of the second organic material layer.

[0028] According to some embodiments, the thickness of the first organic material layer may be equal to (or substantially equal to) the thickness of the second organic material layer.

[0029] According to some embodiments, a surface of the second substrate facing the first substrate may be spaced apart from a surface of the first quantum dot layer facing the second substrate and a surface of the second quantum dot layer facing the second substrate, respectively.

[0030] These and / or other aspects will become apparent and more readily understood from the following detailed description of the embodiments, the accompanying drawings and the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other aspects, features and characteristics of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a schematic perspective view of a display device according to some embodiments;

[0033] Figure 2 is a schematic cross-sectional view of a display device according to some embodiments;

[0034] Figure 3 is a schematic cross-sectional view of a respective sub-pixel of a display device according to some embodiments;

[0035] Figure 4 for Figure 3 Schematic diagram of the color conversion layer;

[0036] Figure 5 is a schematic equivalent circuit diagram of a light emitting diode and a sub-pixel circuit electrically connected to the light emitting diode of a display device according to some embodiments;

[0037] Fig. 6A is a schematic cross-sectional view of a display device according to some embodiments;

[0038] Figure 6B is a schematic cross-sectional view of a display device according to some embodiments;

[0039] Fig. 7A is a voltage-current density graph of a display device according to some embodiments and a display device according to a comparative example;

[0040] Figure 7B is a brightness-efficiency graph of a display device according to some embodiments and a display device according to a comparative example; and

[0041] Fig. 8A , Figure 8B and Figure 8C is a graph of efficiency according to the thickness of an organic material layer of each sub-pixel according to some embodiments. DETAILED DESCRIPTION

[0042] Aspects of some embodiments in the accompanying drawings will now be explained in more detail with reference to their examples, wherein the same reference numerals refer to the same elements throughout. In this regard, the present embodiment may have different forms and should not be construed as being limited to the description set forth herein. Accordingly, the embodiments are described below simply by reference to the figures to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more related enumerated items. Throughout this disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or any combination of a, b, and / or c.

[0043] Because the present disclosure allows various changes and many embodiments, certain embodiments will be illustrated in the drawings and described in the written description. The effects and features of the present disclosure and methods for achieving them will be explained with reference to the embodiments described in detail below with reference to the drawings. However, the embodiments according to the present disclosure are not limited to the embodiments described below and may be embodied in various forms.

[0044] Hereinafter, embodiments will be described with reference to the accompanying drawings, wherein like reference numerals refer to like elements throughout and repeated descriptions thereof will be omitted.

[0045] Although terms, such as "first" and "second," may be used to describe various elements, these elements must not be limited to the above terms. The above terms are used to distinguish one element from another.

[0046] As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0047] It will be understood that the terms “comprise,” “comprising,” “include” and / or “including” as used herein indicate the presence of stated features or elements, but do not preclude the addition of one or more other features or elements.

[0048] It will be further understood that when a layer, region or element is referred to as being “on” another layer, region or element, it can be directly or indirectly on the other layer, region or element. That is, for example, intervening layers, regions or elements may be present.

[0049] It will be understood that when a layer, region, or element is referred to as being “connected” to another layer, region, or element, it may be “directly connected” to the other layer, region, or element, or it may be “indirectly connected” to the other layer, region, or element with other layers, regions, or elements interposed therebetween. For example, it will be understood that when a layer, region, or element is referred to as being “electrically connected” to another layer, region, or element, it may be “directly electrically connected” to the other layer, region, or element, or it may be “indirectly electrically connected” to the other layer, region, or element with another layer, region, or element interposed therebetween.

[0050] In the present specification, “A and / or B” means A or B or A and B. In the present specification, “at least one of A and B” means A or B or A and B.

[0051] The x-axis direction, the y-axis direction, and the z-axis direction are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis direction, the y-axis direction, and the z-axis direction can be perpendicular to each other, or can represent different orientations that are not perpendicular to each other.

[0052] In the present specification, “about” or “approximately” includes explicitly stated values ​​and may mean a value within an acceptable range determined in consideration of an error due to limitations of a measurement system, etc. For example, “about” may mean a value within ±30%, ±20%, ±10%, or ±5% of the explicitly stated value.

[0053] In the case where certain embodiments may be implemented differently, the specific process order may be performed in a different order than the order described. As an example, two processes described successively may be performed simultaneously (or substantially simultaneously) and may be performed successively in a reverse order.

[0054] For convenience of explanation, the size of the elements in the drawings may be exaggerated or reduced. As an example, for convenience of description, the size (eg, thickness) of each element shown in the drawings is arbitrarily represented, and therefore, the present disclosure is not necessarily limited thereto.

[0055] Figure 1 is a schematic perspective view of a display device 1 according to some embodiments.

[0056] refer to Figure 1 , the display device 1 may include a display area DA and a non-display area NDA outside the display area DA (for example, at the periphery of the display area DA or outside the coverage area of ​​the display area DA). The display device 1 may be configured to display an image by an array of multiple sub-pixels arranged two-dimensionally in the display area DA. The multiple sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel. Hereinafter, for the convenience of description, a case is described in which the first sub-pixel is a red sub-pixel Pr, the second sub-pixel is a green sub-pixel Pg, and the third sub-pixel is a blue sub-pixel Pb. The multiple sub-pixels may also include white sub-pixels.

[0057] The red sub-pixel Pr, the green sub-pixel Pg, and the blue sub-pixel Pb are regions configured to emit red light, green light, and blue light, respectively. The display device 1 may be configured to display an image by using light emitted from the sub-pixels.

[0058] like Figure 1 As shown in FIG. 1 , when viewed in a direction perpendicular to the upper surface of the display device 1 (z-axis direction), each of the red sub-pixel Pr, the green sub-pixel Pg, and the blue sub-pixel Pb has a quadrilateral shape. However, embodiments according to the present disclosure are not limited thereto. As an example, when viewed in a direction perpendicular to the upper surface of the display device 1 (z-axis direction), or in a plan view, each of the red sub-pixel Pr, the green sub-pixel Pg, and the blue sub-pixel Pb may have a circular shape or an elliptical shape.

[0059] The non-display area NDA is a region configured not to display an image and may completely surround the display area DA. A driver or a main voltage line configured to provide an electrical signal or power to a sub-pixel circuit may be arranged in the non-display area NDA. A pad may be arranged in the non-display area NDA, wherein an electronic component or a printed circuit board may be electrically connected to the pad.

[0060] like Figure 1 As shown in , the display area DA may have a polygonal shape, such as a quadrilateral shape. As an example, the display area DA may have a rectangular shape in which the horizontal length is greater than the vertical length, a rectangular shape in which the horizontal length is less than the vertical length, or a square. Optionally, the display area DA may have various shapes, such as an elliptical shape or a circular shape. The z-axis direction refers to a direction perpendicular to the upper surface of the display device 1, the x-axis direction refers to a direction parallel to the long side of the upper surface of the display device 1, and the y-axis direction refers to a direction parallel to the short side of the upper surface of the display device 1.

[0061] Figure 2 is a schematic cross-sectional view of a display device 1 according to some embodiments.

[0062] refer to Figure 2 , the display device 1 may include a red sub-pixel Pr, a green sub-pixel Pg, and a blue sub-pixel Pb arranged in the display area DA. The blue sub-pixel Pb may be configured to emit light of a wavelength in a first wavelength band, the red sub-pixel Pr may be configured to emit light of a wavelength in a second wavelength band, and the green sub-pixel Pg may be configured to emit light of a wavelength in a third wavelength band. Here, the first wavelength band may be about 450nm to about 495nm, and the light of a wavelength in the first wavelength band may be blue light Lb. The second wavelength band may be in the range of 625 nanometers (nm) (or about 625nm) to 780nm (or about 780nm), and the light of a wavelength in the second wavelength band may be red light Lr. The third wavelength band may be in the range of 495nm (or about 495nm) to 570nm (or about 570nm), and the light of a wavelength in the third wavelength band may be green light Lg.

[0063] According to some embodiments, the display device 1 may include a display panel 10 and an encapsulation panel 20. The display panel 10 may include a first substrate 100 and a display element placed throughout the first substrate 100. The display element may be, for example, an organic light emitting diode. According to some embodiments, each of the red sub-pixel Pr, the green sub-pixel Pg, and the blue sub-pixel Pb may include an organic light emitting diode.

[0064] The red sub-pixel Pr may include a first light emitting diode LED1, the green sub-pixel Pg may include a second light emitting diode LED2, and the blue sub-pixel Pb may include a third light emitting diode LED3. According to some embodiments, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may be configured to emit light of a wavelength in a first wavelength band (e.g., blue light Lb).

[0065] The red sub-pixel Pr may include a first quantum dot layer 610 disposed throughout the first light emitting diode LED1. The first quantum dot layer 610 may be configured to convert blue light Lb, which is emitted from the first light emitting diode LED1, into red light Lr.

[0066] The green sub-pixel Pg may include a second quantum dot layer 620 disposed throughout the second light emitting diode LED2. The second quantum dot layer 620 may be configured to convert blue light Lb, which is emitted from the second light emitting diode LED2, into green light Lg.

[0067] The blue sub-pixel Pb may include a light-transmitting layer 630 disposed throughout the third light-emitting diode LED3. The light-transmitting layer 630 may be configured to transmit blue light Lb without color conversion, wherein the blue light Lb is emitted from the third light-emitting diode LED3.

[0068] The first quantum dot layer 610, the second quantum dot layer 620, and the light-transmitting layer 630 may be located in the display panel 10. Here, “located in the display panel 10” means that the first quantum dot layer 610, the second quantum dot layer 620, and the light-transmitting layer 630 are directly formed on a layer located on the first substrate 100 to implement the display panel 10.

[0069] The encapsulation panel 20 may include a second substrate 900 defining the groove GR, and a first organic material layer 810 , a second organic material layer 820 , and a third organic material layer 830 each filling the groove GR.

[0070] The groove GR may be defined in a surface (lower surface) of the second substrate 900 facing the first substrate 100. When viewed in a direction (z-axis direction) perpendicular to the upper surface of the display device 1, the groove GR may be arranged to overlap the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3, respectively. Accordingly, the first organic material layer 810 may overlap the first light emitting diode LED1, the second organic material layer 820 may overlap the second light emitting diode LED2, and the third organic material layer 830 may overlap the third light emitting diode LED3.

[0071] The first organic material layer 810, the second organic material layer 820, and the third organic material layer 830 may be located in the encapsulation panel 20. Here, “located in the encapsulation panel 20” means that the first organic material layer 810, the second organic material layer 820, and the third organic material layer 830 are directly formed on the second substrate 900 to implement the encapsulation panel 20. In other words, the first organic material layer 810, the second organic material layer 820, and the third organic material layer 830 may be directly formed on the second substrate 900 using methods such as inkjet printing, spin coating, and slit coating.

[0072] The encapsulation panel 20 may be bonded to the display panel 10 such that the first light emitting diode LED1 , the second light emitting diode LED2 , and the third light emitting diode LED3 face the first organic material layer 810 , the second organic material layer 820 , and the third organic material layer 830 , respectively.

[0073] Light emitted from the first light emitting diode LED1 may pass through the first quantum dot layer 610 and the first organic material layer 810 and be emitted as red light Lr. Light emitted from the second light emitting diode LED2 may pass through the second quantum dot layer 620 and the second organic material layer 820 and be emitted as green light Lg. Light emitted from the third light emitting diode LED3 may pass through the light-transmitting layer 630 and the third organic material layer 830 and be emitted as blue light Lb.

[0074] The display panel 10 and the encapsulation panel 20 may be connected to each other by a sealing member 700. The sealing member 700 may be arranged in the non-display area NDA to surround the display area DA. As an example, when viewed in a direction (z-axis direction) perpendicular to the upper surface of the display device 1, the sealing member 700 may have a closed loop shape surrounding the display area DA.

[0075] The sealing member 700 and the encapsulation panel 20 may completely block the first light emitting diode LED1 , the second light emitting diode LED2 , the third light emitting diode LED3 , etc. of the display panel 10 from the outside.

[0076] By the sealing member 700, the cavity C may be defined between the display panel 10 and the encapsulation panel 20. The first quantum dot layer 610, the second quantum dot layer 620, and the light-transmitting layer 630 may be arranged to face the first organic material layer 810, the second organic material layer 820, and the third organic material layer 830, respectively, with the cavity C therebetween. The cavity C may be a vacuum region in which no filler or the like is placed. Hydrogen ions or the like may be supplied from the first organic material layer 810, the second organic material layer 820, and the third organic material layer 830 through the cavity C to the first quantum dot layer 610, the second quantum dot layer 620, and the light-transmitting layer 630.

[0077] The sealing member 700 may include a sealant and a frit, etc. According to some embodiments, the sealing member 700 may include a light-curable resin that is cured by ultraviolet rays, etc.

[0078] Figure 3 2 are schematic cross-sectional views of respective sub-pixels of the display device 1 according to some embodiments.

[0079] refer to Figure 3 , the display device 1 may include a circuit layer 200 on a first substrate 100. The circuit layer 200 may include first to third sub-pixel circuits PC1, PC2, and PC3. The first to third sub-pixel circuits PC1, PC2, and PC3 may be electrically connected to first to third light emitting diodes LED1, LED2, and LED3 of the light emitting diode layer 300, respectively.

[0080] The first to third light emitting diodes LED1, LED2 and LED3 may each include an organic light emitting diode including an organic material. According to some embodiments, the first to third light emitting diodes LED1, LED2 and LED3 may each include an inorganic light emitting diode including an inorganic material. The inorganic light emitting diode may include a PN junction diode including an inorganic semiconductor material. When a forward voltage is applied to the PN junction diode, holes and electrons are injected and the energy generated by the recombination of holes and electrons is converted into light energy, and therefore, light of a preset color may be emitted. The inorganic light emitting diode may have a width of several micrometers to hundreds of micrometers or several nanometers to hundreds of nanometers.

[0081] In some embodiments, the first to third light emitting diodes LED1, LED2 and LED3 may each be a light emitting diode including quantum dots. As described above, the emission layers of the first to third light emitting diodes LED1, LED2 and LED3 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0082] The first to third light emitting diodes LED1, LED2, and LED3 may be configured to emit light of the same color. As an example, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may be configured to emit light of a wavelength in a first wavelength band (e.g., blue light Lb), and the blue light Lb emitted from the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may pass through the color conversion layer 600 through the encapsulation layer 400 on the light emitting diode layer 300.

[0083] The color conversion layer 600 may include an optical portion configured to convert the color of the blue light Lb emitted from the light emitting diode layer 300, or configured to transmit the light without converting the color. As an example, the color conversion layer 600 may include a color converter and an emitter, wherein the color converter converts the blue light Lb emitted from the light emitting diode layer 300 into light of a different color, and the emitter transmits the blue light Lb emitted from the light emitting diode layer 300 without converting the color of the blue light Lb. The color conversion layer 600 may include a first quantum dot layer 610 corresponding to a red sub-pixel Pr, a second quantum dot layer 620 corresponding to a green sub-pixel Pg, and a light-transmitting layer 630 corresponding to a blue sub-pixel Pb. The first quantum dot layer 610 may be configured to convert the blue light Lb into red light Lr, and the second quantum dot layer 620 may be configured to convert the blue light Lb into green light Lg. The light-transmitting layer 630 may be configured to transmit the blue light Lb without converting the blue light Lb.

[0084] The blue light Lb emitted from the light emitting diode layer 300 may be light of a wavelength in a first wavelength band. The first wavelength band may be, for example, about 450 nm to about 495 nm. The red light Lr converted from the blue light Lb by the first quantum dot layer 610 may be light of a wavelength in a second wavelength band. The second wavelength band may be, for example, about 625 nm to about 780 nm. The green light Lg converted by the second quantum dot layer 620 may be light of a wavelength in a third wavelength band. The third wavelength band may be, for example, about 495 nm to about 570 nm. The embodiments according to the present disclosure are not limited thereto, and the wavelength band to which the wavelength of the light emitted from the light emitting diode layer 300 belongs and the wavelength band to which the wavelength of the light after conversion belongs may be modified differently.

[0085] The circuit layer 200 , the light emitting diode layer 300 , the encapsulation layer 400 , and the color conversion layer 600 may be sequentially formed on the first substrate 100 .

[0086] The second substrate 900 may be placed over the first substrate 100 so that the circuit layer 200, the light emitting diode layer 300, the encapsulation layer 400 and the color conversion layer 600 are located between the first substrate 100 and the second substrate 900. The second substrate 900 may include glass or a light-transmitting organic material. The second substrate 900 may include a light-transmitting organic material, such as an acrylic resin.

[0087] The ion supply layer 800 may be located on a surface (lower surface) of the second substrate 900 facing the first substrate 100. The ion supply layer 800 may be located on the color conversion layer 600. The ion supply layer 800 may include first to third organic material layers 810, 820, and 830.

[0088] The first to third organic material layers 810, 820, and 830 may be resins containing acidic groups, and the acidic substances release hydrogen ions through polymerization when exposed to ultraviolet rays or heat. According to some embodiments, the first to third organic material layers 810, 820, and 830 may include polymers having carboxyl groups. As an example, the first to third organic material layers 810, 820, and 830 may include polyacrylic acid. According to some embodiments, the first to third organic material layers 810, 820, and 830 may include light-transmitting organic materials that do not contain dyes and / or pigments.

[0089] When exposed to ultraviolet rays or heat, the ion supply layer 800 can release hydrogen ions, water (H 2 Hydrogen ions, water (H O) and / or methanol released from the ion supply layer 800 2 O) and / or methanol are transferred to the color conversion layer 600 to make the first quantum dot layer 610 and the second quantum dot layer 620 positively aged, thereby relatively improving the light efficiency of the display device 1.

[0090] The ion supply layer 800 is formed on the second substrate 900 , and then the first substrate 100 and the second substrate 900 are bonded to each other such that the ion supply layer 800 faces the color conversion layer 600 .

[0091] The display device 1 having the above-described structure may include electronic devices that can display moving images or still images, such as televisions, billboards, cinema screens, monitors, and tablet personal computers.

[0092] Figure 4 for Figure 3 Schematic diagram of a color conversion layer 600.

[0093] refer to Figure 4 The first quantum dot layer 610 may be configured to convert blue light Lb incident to the first quantum dot layer 610 into red light Lr. The first quantum dot layer 610 may include a first photosensitive polymer 1151 and first quantum dots 1152 and first scattering particles 1153 dispersed in the first photosensitive polymer 1151 .

[0094] The first quantum dots 1152 may be excited by the blue light Lb and may isotropically emit red light Lr having a wavelength greater than that of the blue light Lb. The first photosensitive polymer 1151 may be an organic material having light transmittance. The first scattering particles 1153 may increase the color conversion efficiency by scattering the blue light Lb that is not absorbed in the first quantum dots 1152 and allowing more first quantum dots 1152 to be excited. In addition, regardless of the incident angle, the first scattering particles 1153 may scatter light in various directions while substantially not converting the wavelength of the incident light. Thus, the first scattering particles 1153 may relatively improve the side visibility of the display device 1. The first scattering particles 1153 may be, for example, titanium oxide (TiO 2 ) or metal particles, etc.

[0095] The first quantum dot 1152 may include a Group II-VI semiconductor compound, a Group III-V semiconductor compound, a Group III-VI semiconductor compound, a Group I-III-VI semiconductor compound, a Group IV-VI semiconductor compound, a Group IV element or semiconductor compound, or any combination thereof.

[0096] Examples of II-VI semiconductor compounds may include binary element compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; ternary element compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, C dZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe or MgZnS; a quaternary element compound, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe; or any combination thereof.

[0097] Examples of Group III-V semiconductor compounds may include binary element compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb; ternary element compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, or InPSb; quaternary element compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, or InAlPAs; or any combination thereof. The Group III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including the Group II element may include InZnP, InGaZnP, or InAlZnP.

[0098] Examples of III-VI semiconductor compounds may include binary element compounds such as GaS, GaSe, Ga 2 Se 3 、GaTe、InS、In 2 S 3 、InSe、In 2 Se 3 or InTe; ternary element compounds, such as AgInS, AgInS 2 、CuInS、CuInS 2 、InGaS 3 or InGaSe 3 ; or any combination thereof.

[0099] Examples of Group I-III-VI semiconductor compounds may include ternary element compounds such as AgInS, AgInS 2 、CuInS、CuInS 2 、CuGaO 2 、AgGaO 2 or AgAlO 2 ; or any combination thereof.

[0100] Examples of Group IV-VI semiconductor compounds may include binary element compounds such as SnS, SnSe, SnTe, PbS, PbSe or PbTe; ternary element compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe or SnPbTe; quaternary element compounds such as SnPbSSe, SnPbSeTe or SnPbSTe; or any combination thereof.

[0101] The Group IV element or semiconductor compound may include a single element material, including Si or Ge; a binary element compound, including SiC or SiGe; or any combination thereof.

[0102] Each element included in the multi-element compound such as the binary-element compound, the ternary-element compound, and the quaternary-element compound may be present in the particle at a uniform concentration or a non-uniform concentration.

[0103] The quantum dot may have a single structure in which the concentration of each element included in the relevant quantum dot is uniform, or a dual structure of a core-shell. As an example, the material of the core may be different from the material of the shell. The shell of the quantum dot may be used as a protective layer to prevent chemical changes in the core to maintain semiconductor properties and / or as a charging layer for providing electrophoretic properties to the quantum dot. The shell may include a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center of the core.

[0104] Examples of the shell of the quantum dot include metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal oxides or non-metal oxides may include binary element compounds, including SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or NiO; ternary element compounds, including MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 or CoMn 2 O 4; or any combination thereof. Examples of semiconductor compounds may include, as described above, Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, or any combination thereof. As examples, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0105] The quantum dot may have a full width at half maximum (FWHM) of a light emission wavelength spectrum of 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less. Within this range, color purity and / or color reproduction may be relatively improved. In addition, because the light emitted from the quantum dot is emitted in all directions, the viewing angle of the light may be relatively improved.

[0106] In addition, the shape of the quantum dot may be a spherical shape, a pyramidal shape, a multi-arm shape, or a cubic shape, or the quantum dot may be a nanoparticle, a nanotube, a nanowire, a nanofiber, a nanoplate, or the like.

[0107] Because the energy band gap can be adjusted by adjusting the size of the quantum dots, light in various wavelength bands can be obtained from the quantum dot emission layer. Accordingly, a light-emitting element that emits light in various wavelengths can be implemented by using quantum dots of different sizes. Specifically, the size of the quantum dots can be selected so that red light, green light and / or blue light are emitted. In addition, the size of the quantum dots can be configured so that light of various colors is combined to emit white light.

[0108] The second quantum dot layer 620 may be configured to convert blue light Lb incident to the second quantum dot layer 620 into green light Lg. The second quantum dot layer 620 may include a second photosensitive polymer 1161 and second quantum dots 1162 and second scattering particles 1163 dispersed in the second photosensitive polymer 1161 .

[0109] The second quantum dots 1162 may be excited by the blue light Lb and may isotropically emit green light Lg having a wavelength greater than that of the blue light Lb. The second photosensitive polymer 1161 may be an organic material having light transmittance.

[0110] The second scattering particles 1163 can increase the color conversion efficiency by scattering the blue light Lb that is not absorbed in the second quantum dots 1162 and allowing more second quantum dots 1162 to be excited. The second scattering particles 1163 can be, for example, titanium oxide (TiO 2) or metal particles, etc. The second quantum dots 1162 may include a II-VI semiconductor compound, a III-V semiconductor compound, a III-VI semiconductor compound, a I-III-VI semiconductor compound, a IV-VI semiconductor compound, a IV element or semiconductor compound, or any combination thereof.

[0111] According to some embodiments, the first quantum dot 1152 may include the same material as that of the second quantum dot 1162. In this case, the size of the first quantum dot 1152 may be greater than that of the second quantum dot 1162.

[0112] The light-transmitting layer 630 may transmit the blue light Lb without converting the blue light Lb incident to the light-transmitting layer 630. The light-transmitting layer 630 may include a third photosensitive polymer 1171 in which third scattering particles 1173 are dispersed. The third photosensitive polymer 1171 may include, for example, an organic material having light transmittance, such as silicone resin and epoxy resin, and include the same material as the first photosensitive polymer 1151 and the second photosensitive polymer 1161. The third scattering particles 1173 may scatter and emit the blue light Lb and include the same material as the first scattering particles 1153 and the second scattering particles 1163.

[0113] Figure 5 is a schematic equivalent circuit diagram of a light emitting diode LED and a sub-pixel circuit PC electrically connected to the light emitting diode of a display device 1 according to some embodiments.

[0114] Figure 5 The sub-pixel circuit PC shown in FIG. Figure 3 Each of the first to third sub-pixel circuits PC1, PC2 and PC3 described above, and Figure 5 The light emitting diode LED shown in the reference Figure 3 Each of the first to third light emitting diodes LED1, LED2 and LED3 described.

[0115] refer to Figure 5 , a pixel electrode (e.g., an anode) of the light emitting diode LED may be connected to the sub-pixel circuit PC, and a counter electrode (e.g., a cathode) of the light emitting diode LED may be connected to the main voltage line and configured to receive the common voltage ELVSS. The light emitting diode LED may be configured to emit light at a brightness corresponding to the amount of current supplied from the sub-pixel circuit PC.

[0116] The sub-pixel circuit PC may be configured to control the amount of current flowing through the light emitting diode LED according to the data signal. The sub-pixel circuit PC may include a first transistor M1, a second transistor M2, a third transistor M3, and a storage capacitor Cst.

[0117] Each of the first transistor M1, the second transistor M2, and the third transistor M3 may be an oxide semiconductor transistor including a semiconductor layer (including an oxide semiconductor), or may be a silicon semiconductor transistor including a semiconductor layer (including polysilicon). Depending on the type of the transistor, the first electrode of the transistor may be one of the source electrode and the drain electrode, and the second electrode of the transistor may be the other of the source electrode and the drain electrode.

[0118] A first electrode of the first transistor M1 may be connected to a driving voltage line PL configured to supply a driving voltage ELVDD, and a second electrode of the first transistor M1 may be connected to a pixel electrode of the light emitting diode LED. A gate electrode of the first transistor M1 may be connected to a first node N1. The first transistor M1 may be configured to control an amount of current flowing from the driving voltage line PL to the light emitting diode LED according to a voltage of the first node N1.

[0119] The second transistor M2 may be a switching transistor. A first electrode of the second transistor M2 may be connected to the data line DL, and a second electrode of the second transistor M2 may be connected to the first node N1. A gate electrode of the second transistor M2 may be connected to the scan line SL. When a scan signal is supplied through the scan line SL, the second transistor M2 may be turned on to electrically connect the data line DL to the first node N1.

[0120] The third transistor M3 may be an initialization transistor and / or a sensing transistor. A first electrode of the third transistor M3 may be connected to the second node N2, and a second electrode of the third transistor M3 may be connected to the sensing line ISL. A gate electrode of the third transistor M3 may be connected to the control line GCL.

[0121] The storage capacitor Cst may be connected between the first node N1 and the second node N2. As an example, a first capacitor electrode of the storage capacitor Cst may be connected to the gate electrode of the first transistor M1, and a second capacitor electrode of the storage capacitor Cst may be connected to the second electrode of the first transistor M1.

[0122] Despite Figure 5 , the first transistor M1, the second transistor M2, and the third transistor M3 are shown as n-channel metal oxide semiconductor (MOS) field effect transistors (FETs), but the embodiments of the present disclosure are not limited thereto. As an example, at least one of the first transistor M1, the second transistor M2, and the third transistor M3 may be a p-channel metal oxide semiconductor (MOS) field effect transistor (FET).

[0123] In addition, although Figure 5Three transistors are shown, but the embodiments according to the present disclosure are not limited thereto. The sub-pixel circuit PC may include four or more transistors. In addition, the sub-pixel circuit PC may include additional components or fewer components without departing from the spirit and scope of the embodiments according to the present disclosure.

[0124] Fig. 6A and Figure 6B is a schematic cross-sectional view of a display device 1 according to some embodiments. Fig. 6A is a schematic cross-sectional view of a sub-pixel included in the display device 1, and Figure 6B For along Figure 1 The line I-I' intercepts Figure 1 Schematic cross-sectional view of a display device 1 is shown in FIG.

[0125] refer to Fig. 6A The display device 1 may include a display panel 10 and an encapsulation panel 20 placed over the display panel 10. The display panel 10 may include a first substrate 100, a circuit layer 200, a light emitting diode layer 300, an encapsulation layer 400, a dam layer 510, and a first quantum dot layer 610 sequentially stacked on the first substrate 100.

[0126] The first substrate 100 may include glass, metal or polymer resin. The first substrate 100 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate or cellulose acetate propionate. The first substrate 100 may have a multilayer structure including two layers (each including a polymer resin) and an isolation layer between the two layers (including an inorganic material (such as silicon oxide, silicon nitride and / or silicon oxynitride)). However, various modifications may be made.

[0127] The buffer layer 201 may be located on the first substrate 100. The buffer layer 201 may be configured to prevent impurities from the first substrate 100 from penetrating into the semiconductor layer Act of the thin film transistor TFT. The buffer layer 201 may include an inorganic insulating material such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0128] The first sub-pixel circuit PC1 included in the circuit layer 200 may be located on the buffer layer 201. The first sub-pixel circuit PC1 may include a thin film transistor TFT and a capacitor Cap. The thin film transistor TFT and the capacitor Cap may correspond to the reference Figure 5 The first transistor M1 and the storage capacitor Cst are described.

[0129] The semiconductor layer Act of the thin film transistor TFT may be located on the buffer layer 201. The semiconductor layer Act may include an oxide semiconductor. The oxide semiconductor may include indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), etc. According to some embodiments, the semiconductor layer Act may include polycrystalline silicon, amorphous silicon, or an organic semiconductor, etc. The semiconductor layer Act may include a channel region and a conductive region, wherein the channel region overlaps with the gate electrode GE, and the conductive region is located on two opposite sides of the channel region and is doped with impurities or made conductive with impurities. One of the conductive regions may be a source region, and the other may correspond to a drain region.

[0130] The gate electrode GE may include various conductive materials and have a single-layer structure or a multi-layer structure. As an example, the gate electrode GE may include a Mo layer and an Al layer. In this case, the gate electrode GE may have a layered structure of Mo / Al / Mo. Alternatively, the gate electrode GE may include TiN x layer, Al layer and / or Ti layer.

[0131] The source electrode SE and the drain electrode DE may include various conductive materials and have a single-layer structure or a multi-layer structure. As an example, the source electrode SE and the drain electrode DE may include a Ti layer, an Al layer and / or a Cu layer. The source electrode SE and the drain electrode DE may have a layered structure of Ti / Al / Ti.

[0132] Despite Fig. 6A , the thin film transistor TFT includes both a source electrode SE and a drain electrode DE, but the embodiments of the present disclosure are not limited thereto. As an example, the conductive region of the semiconductor layer Act of the thin film transistor TFT may be integrated with the conductive region of the semiconductor layer of another thin film transistor. In this case, the source electrode SE and / or the drain electrode DE may be omitted. The source electrode SE and / or the drain electrode DE may be part of the wiring.

[0133] In order to ensure insulation between the semiconductor layer Act and the gate electrode GE, a gate insulating layer 203 may be located between the semiconductor layer Act and the gate electrode GE, wherein the gate insulating layer 203 includes an inorganic material, such as silicon oxide, silicon nitride and / or silicon oxynitride. An interlayer insulating layer 205 may be located on the gate electrode GE, wherein the interlayer insulating layer 205 includes an inorganic material, such as silicon oxide, silicon nitride and / or silicon oxynitride. The source electrode SE and the drain electrode DE may be located on the interlayer insulating layer 205. The insulating layer including the inorganic material may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). This also applies to the following embodiments and modifications thereof.

[0134] The capacitor Cap may include a first capacitor electrode Cap1 and a second capacitor electrode Cap2 . The first capacitor electrode Cap1 may be located on the gate insulating layer 203 , and the second capacitor electrode Cap2 may be located on the interlayer insulating layer 205 .

[0135] The first capacitor electrode Cap1 may include various conductive materials and have a single-layer structure or a multi-layer structure. As an example, the first capacitor electrode Cap1 may include a Mo layer and an Al layer. The first capacitor electrode Cap1 may have a layered structure of Mo / Al / Mo. Alternatively, the first capacitor electrode Cap1 may include TiN x layer, Al layer and / or Ti layer.

[0136] The second capacitor electrode Cap2 may include various conductive materials and have a single layer structure or a multilayer structure. As an example, the second capacitor electrode Cap2 may include a Ti layer, an Al layer, a Mo layer and / or a Cu layer. The second capacitor electrode Cap2 may have a layered structure of Mo / Al / Mo.

[0137] The planarization layer 207 may be formed on the thin film transistor TFT and the capacitor Cap. The planarization layer 207 may provide an approximately flat upper surface on the first pixel electrode 311 of the first light emitting diode LED1. The planarization layer 207 may include an organic insulating material such as acrylic resin, benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO). Fig. 6A The planarization layer 207 is shown as a single layer in FIG, but the planarization layer 207 may be a multi-layer. However, various modifications may be made.

[0138] The first light emitting diode LED1 may be located on the planarization layer 207, wherein the first light emitting diode LED1 includes a first pixel electrode 311, an opposite electrode 330, and an intermediate layer 320 located between the first pixel electrode 311 and the opposite electrode 330 and including an emission layer. Figure 5 As shown in FIG. 2 , the first pixel electrode 311 may be electrically connected to the first sub-pixel circuit PC1 by contacting one of the source electrode SE and the drain electrode DE of the thin film transistor TFT through a contact hole formed in the planarization layer 207 .

[0139] The first pixel electrode 311 may include a light-transmitting conductive layer and a reflective layer, wherein the light-transmitting conductive layer includes a light-transmitting conductive oxide, such as indium tin oxide (ITO), indium oxide (In 2 O 3 ) or indium zinc oxide (IZO), and the reflective layer includes metal, such as aluminum (Al) or silver (Ag). As an example, the first pixel electrode 311 may have a triple-layer structure of ITO / Ag / ITO.

[0140] The intermediate layer 320 including the emission layer may have a shape integrated throughout a plurality of pixels. The intermediate layer 320 may be arranged throughout the entire surface of the display area DA. When necessary, the intermediate layer 320 may be patterned and located on the first pixel electrode 311 of the first light emitting diode LED1. In addition to the emission layer, the intermediate layer 320 may also include a hole injection layer, a hole transport layer and / or an electron transport layer when necessary. The layers included in the intermediate layer 320 may have a shape integrated throughout a plurality of pixels. Some layers of the intermediate layer 320, for example, the emission layer, may be patterned and arranged to correspond to the first pixel electrode 311 when necessary. The emission layer of the intermediate layer 320 may be configured to emit light of a wavelength in a first wavelength band. The first wavelength band may be, for example, about 450nm to about 495nm, and the light emitted from the first light emitting diode LED1 may be blue light Lb.

[0141] The intermediate layer 320 may include a plurality of emission layers instead of one emission layer. As an example, the intermediate layer 320 may have a structure in which a first emission layer and a second emission layer are stacked and a charge generation layer or the like is located between the first emission layer and the second emission layer. In this case, a hole transport layer or an electron transport layer may be located between the first emission layer and the charge generation layer and between the second emission layer and the charge generation layer.

[0142] The counter electrode 330 on the intermediate layer 320 may have a shape that is integrated across a plurality of pixel electrodes. The counter electrode 330 may be arranged across the entire surface of the display area DA. The counter electrode 330 may include a light-transmitting conductive layer (including ITO, In 2 O 3 or IZO) and includes a semi-transmissive layer including a metal such as aluminum (Al), lithium (Li), magnesium (Mg), ytterbium (Yb), or silver (Ag). As an example, the counter electrode 330 may be a semi-transmissive layer including MgAg, AgYb, Yb / MgAg, or Li / MgAg.

[0143] The pixel defining layer PDL may be located on the planarization layer 207. The pixel defining layer PDL may cover the edge of the first pixel electrode 311 and define a first pixel opening OP1 exposing a central portion of the first pixel electrode 311. The pixel defining layer PDL may prevent arcing, etc., from occurring at the edge of the first pixel electrode 311 by increasing the distance between the edge of the first pixel electrode 311 and the edge of the counter electrode 330. The pixel defining layer PDL may include an organic material such as polyimide or HMDSO.

[0144] The first light emitting diode LED1 including the first pixel electrode 311, the intermediate layer 320 including the emission layer, and the counter electrode 330 may be degraded by moisture, oxygen, etc. Accordingly, in order to protect the first light emitting diode LED1 from external moisture or oxygen, the display device 1 may include an encapsulation layer 400 covering the first light emitting diode LED1.

[0145] The encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. As an example, the encapsulation layer 400 may include a first inorganic encapsulation layer 410 , a second inorganic encapsulation layer 430 , and an organic encapsulation layer 420 between the first and second inorganic encapsulation layers 410 and 430 .

[0146] The first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may include at least one inorganic insulating material (such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide and zinc oxide) and may be formed using chemical vapor deposition (CVD) etc. The organic encapsulation layer 420 may include a polymer material. The polymer material may include acrylic resins (e.g., polymethyl methacrylate and polyacrylic acid, etc.), epoxy resins, polyimide and polyethylene.

[0147] Since the first inorganic encapsulating layer 410 formed by chemical vapor deposition has an approximately uniform thickness, the upper surface of the first inorganic encapsulating layer 410 is not flat. However, the organic encapsulating layer 420 has an approximately flat upper surface, and therefore, the second inorganic encapsulating layer 430 on the organic encapsulating layer 420 may also have an approximately flat upper surface.

[0148] The dam layer 510 may be located on the encapsulation layer 400, wherein the dam layer 510 defines a first dam opening 501. The first dam opening 501 of the dam layer 510 may correspond to the first light emitting diode LED1. That is, when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the first dam opening 501 of the dam layer 510 may overlap with the first pixel opening OP1 of the pixel defining layer PDL exposing the first pixel electrode 311.

[0149] According to some embodiments, the area of ​​the first bank hole 501 of the bank layer 510 may be greater than the area of ​​the first pixel hole OP1 of the pixel defining layer PDL. Thus, light emitted from the first pixel hole OP1 of the pixel defining layer PDL may be sufficiently incident into the first bank hole 501 of the bank layer 510.

[0150] The levee layer 510 may include various materials, for example, acrylic resin, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). When necessary, the levee layer 510 may include a photoresist material. Thus, the levee layer 510 may be easily formed by a process such as an exposure and development process. Since the levee layer 510 is formed over the first substrate 100 by the exposure and development process, the levee layer 510 may appear to have an inverted tapered shape relative to the first substrate 100. That is, the area of ​​the surface of the levee layer 510 facing the first substrate 100 may be smaller than the area of ​​the surface of the levee layer 510 facing the second substrate 900.

[0151] Light of a wavelength in a first wavelength band generated from the first light emitting diode LED1 may be converted into light of a wavelength in a second wavelength band and emitted to the outside through the first quantum dot layer 610 located in the first bank opening 501. When viewed in a direction (z-axis direction) perpendicular to the first substrate 100, the first quantum dot layer 610 may overlap the first pixel electrode 311. The first quantum dot layer 610 may include a photosensitive polymer having light transmittance, quantum dots, and scattering particles.

[0152] As reference Figure 4 As described, the quantum dots of the first quantum dot layer 610 may include a II-VI semiconductor compound, a III-V semiconductor compound, a III-VI semiconductor compound, an I-III-VI semiconductor compound, a IV-VI semiconductor compound, a IV element or semiconductor compound, or any combination thereof. The diameter of the quantum dot may be, for example, about 1 μm to about 10 μm.

[0153] The first quantum dot layer 610 may be configured to convert light of a wavelength in a first wavelength band emitted from the first light emitting diode LED1 into light of a wavelength in a second wavelength band. According to some embodiments, a light-transmitting layer may be located in the first bank opening 501. The light-transmitting layer may be configured to transmit light emitted from the first light emitting diode LED1 without conversion.

[0154] The encapsulation panel 20 may be placed over the display panel 10 so that the circuit layer 200, the light emitting diode layer 300, and the encapsulation layer 400 are located between the encapsulation panel 20 and the first substrate 100. Figure 2 As described, the display panel 10 may be attached to the encapsulation panel 20 using the sealing member 700 outside the display area DA.

[0155] The encapsulation panel 20 may include a second substrate 900 and a first organic material layer 810 (ion supply layer) on a surface (lower surface) of the second substrate 900 facing the first substrate 100 .

[0156] The second substrate 900 may include glass or a light-transmitting organic material. The second substrate 900 may define a first groove 901 in a surface (lower surface) of the second substrate 900 facing the first substrate 100, wherein the first groove 901 corresponds to the first light-emitting diode LED1. That is, when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the first groove 901 may be defined to overlap with the first pixel opening OP1 and the first dam opening 501. In the thickness direction, the surface (lower surface) of the second substrate 900 facing the first substrate 100 and the uppermost surface of the display panel 10 (i.e., the surface (upper surface) of the first quantum dot layer 610 facing the second substrate 900) may be spaced apart from each other by a first distance d1.

[0157] The first organic material layer 810 may be located in the first groove 901 to fill the first groove 901. The thickness t1 of the first organic material layer 810 may be less than or equal to the depth of the first groove 901. Accordingly, the first distance d1 between the surface (lower surface) of the second substrate 900 facing the first substrate 100 and the surface (upper surface) of the first quantum dot layer 610 facing the second substrate 900 may be equal to or less than the second distance d2 between the surface (lower surface) of the first organic material layer 810 facing the first substrate 100 and the surface (upper surface) of the first quantum dot layer 610 facing the second substrate 900. A vacuum region may be located between the first quantum dot layer 610 and the first organic material layer 810, wherein fillers or the like are not placed in the vacuum region. That is, the first quantum dot layer 610 and the first organic material layer 810 may be arranged to face each other, separated by a sealing member 700 (see Figure 2 ) defines a cavity C between the first quantum dot layer 610 and the first organic material layer 810 (see Figure 2 ).

[0158] The first organic material layer 810 may include a resin containing an acidic group that releases hydrogen ions by a polymerization reaction when exposed to ultraviolet rays or heat. The first organic material layer 810 may include a polymer having a carboxyl group. The first organic material layer 810 may include polyacrylic acid.

[0159] In addition to the water contained in the first organic material layer 810, the first organic material layer 810 can also decompose and release additional water through heat treatment. 2 O) and / or methanol, the first organic material layer 810 can relatively improve the light efficiency of the display device 1.

[0160] refer to Figure 6B, the display device 1 may include a plurality of pixels configured to emit light of different colors. The display device 1 may include a display panel 10 and a packaging panel 20 placed throughout the display panel 10. The display panel 10 may include first to third light emitting diodes LED1, LED2, and LED3, and first to third sub-pixel circuits PC1, PC2, and PC3 electrically connected to the first to third light emitting diodes LED1, LED2, and LED3, respectively.

[0161] A circuit layer 200 including first to third sub-pixel circuits PC1, PC2 and PC3 may be located on the first substrate 100, a light-emitting diode layer 300 including first to third light-emitting diodes LED1, LED2 and LED3 may be located on the circuit layer 200, and the light-emitting diode layer 300 may be sealed by an encapsulation layer 400.

[0162] The first sub-pixel circuit PC1 included in the circuit layer 200 may be located on the buffer layer 201. Each of the first to third sub-pixel circuits PC1, PC2, and PC3 may include a thin film transistor TFT and a capacitor Cap.

[0163] The planarization layer 207 may be formed on the thin film transistor TFT and the capacitor Cap. Since the planarization layer 207 has an approximately flat upper surface, the first to third pixel electrodes 311, 312, and 313 may be located on the flat surface.

[0164] The first to third light emitting diodes LED1, LED2 and LED3 may be located on the planarization layer 207. The first light emitting diode LED1 may include a first pixel electrode 311, an intermediate layer 320 and an opposing electrode 330. The first pixel electrode 311 may be electrically connected to the first sub-pixel circuit PC1 through a contact hole formed in the planarization layer 207 or the like.

[0165] The second light emitting diode LED2 may include a second pixel electrode 312, an intermediate layer 320, and an opposing electrode 330. The second pixel electrode 312 may be electrically connected to the second sub-pixel circuit PC2 through a contact hole formed in the planarization layer 207 or the like.

[0166] The third light emitting diode LED3 may include a third pixel electrode 313, an intermediate layer 320, and an opposing electrode 330. The third pixel electrode 313 may be electrically connected to the third sub-pixel circuit PC3 through a contact hole formed in the planarization layer 207 or the like.

[0167] The first pixel electrode 311, the second pixel electrode 312 and the third pixel electrode 313 may include a light-transmitting conductive layer and a reflective layer, wherein the light-transmitting conductive layer includes a light-transmitting conductive oxide, such as indium tin oxide (ITO), indium oxide (In 2 O 3) or indium zinc oxide (IZO), and the reflective layer includes a metal such as Al or Ag. As an example, the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 may have a triple-layer structure of ITO / Ag / ITO.

[0168] The intermediate layer 320 including the emission layer may have a shape that is integrated throughout the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. In addition to the emission layer, the intermediate layer 320 may also include a hole injection layer, a hole transport layer, and / or an electron transport layer when necessary. The layers included in the intermediate layer 320 may have a shape that is integrated throughout the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. When necessary, some layers included in the intermediate layer 320 may be patterned and arranged to correspond to the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. The emission layer of the intermediate layer 320 may be configured to emit light of a wavelength in the first wavelength band.

[0169] The counter electrode 330 may have a shape that is integrated throughout the first to third pixel electrodes 311, 312, and 313. The counter electrode 330 may include a light-transmitting conductive layer (including ITO, In 2 O 3 or IZO) or includes a semi-transmissive layer (including a metal such as aluminum (Al), lithium (Li), magnesium (Mg), ytterbium (Yb) or silver (Ag)). As an example, the counter electrode 330 may be a semi-transmissive layer including MgAg, AgYb, Yb / MgAg or Li / MgAg.

[0170] The pixel defining layer PDL may be located on the planarization layer 207. The pixel defining layer PDL may include pixel openings corresponding to the first to third pixel electrodes 311, 312, and 313, respectively. That is, the pixel defining layer PDL covers the edge of each of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, and includes a first pixel opening OP1 exposing a central portion of the first pixel electrode 311, a second pixel opening OP2 exposing a central portion of the second pixel electrode 312, and a third pixel opening OP3 exposing a central portion of the third pixel electrode 313. The pixel defining layer PDL may include, for example, an organic material such as polyimide or HMDSO.

[0171] The encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. As an example, the encapsulation layer 400 may include a first inorganic encapsulation layer 410 , a second inorganic encapsulation layer 430 , and an organic encapsulation layer 420 between the first and second inorganic encapsulation layers 410 and 430 .

[0172] The dam layer 510 including first to third dam openings 501, 502, and 503 may be located on the encapsulation layer 400. The first to third dam openings 501, 502, and 503 of the dam layer 510 may correspond to the first to third light emitting diodes LED1, LED2, and LED3, respectively. Specifically, the first dam opening 501 of the dam layer 510 may correspond to the first pixel opening OP1 of the pixel defining layer PDL exposing the first pixel electrode 311, the second dam opening 502 may correspond to the second pixel opening OP2 of the pixel defining layer PDL exposing the second pixel electrode 312, and the third dam opening 503 may correspond to the third pixel opening OP3 of the pixel defining layer PDL exposing the third pixel electrode 313.

[0173] That is, when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the first bank stop opening 501 of the bank stop layer 510 may overlap with the first pixel opening OP1 of the pixel defining layer PDL exposing the first pixel electrode 311, the second bank stop opening 502 may overlap with the second pixel opening OP2 of the pixel defining layer PDL exposing the second pixel electrode 312, and the third bank stop opening 503 may overlap with the third pixel opening OP3 of the pixel defining layer PDL exposing the third pixel electrode 313. Alternatively, the first bank stop opening 501 of the bank stop layer 510 may overlap with the first pixel electrode 311, the second bank stop opening 502 of the bank stop layer 510 may overlap with the second pixel electrode 312, and the third bank stop opening 503 of the bank stop layer 510 may overlap with the third pixel electrode 313.

[0174] According to some embodiments, the area of ​​the first bank stop opening 501 of the bank stop layer 510 may be greater than the area of ​​the first pixel opening OP1 of the pixel defining layer PDL, the area of ​​the second bank stop opening 502 may be greater than the area of ​​the second pixel opening OP2, and the area of ​​the third bank stop opening 503 may be greater than the area of ​​the third pixel opening OP3. Thus, light generated from the first pixel opening OP1 of the pixel defining layer PDL may be sufficiently incident into the first bank stop opening 501 of the bank stop layer 510, light generated from the second pixel opening OP2 of the pixel defining layer PDL may be sufficiently incident into the second bank stop opening 502 of the bank stop layer 510, and light generated from the third pixel opening OP3 of the pixel defining layer PDL may be sufficiently incident into the third bank stop opening 503 of the bank stop layer 510.

[0175] Light of a wavelength in a first wavelength band generated from the first light emitting diode LED1 may be converted into light of a wavelength in a second wavelength band and emitted to the outside through the first quantum dot layer 610 located in the first bank opening 501. When viewed in a direction (z-axis direction) perpendicular to the first substrate 100, the first quantum dot layer 610 may overlap the first pixel electrode 311. The first quantum dot layer 610 may include a photosensitive polymer having light transmittance, quantum dots, and scattering particles.

[0176] Light of a wavelength in the first wavelength band generated from the second light emitting diode LED2 may be converted into light of a wavelength in the third wavelength band and emitted to the outside through the second quantum dot layer 620 located in the second bank opening 502. When viewed in a direction (z-axis direction) perpendicular to the first substrate 100, the second quantum dot layer 620 may overlap the second pixel electrode 312. The second quantum dot layer 620 may include a photosensitive polymer having light transmittance, quantum dots, and scattering particles.

[0177] Each of the first quantum dot layer 610 and the second quantum dot layer 620 may include a Group II-VI semiconductor compound, a Group III-V semiconductor compound, a Group III-VI semiconductor compound, a Group I-III-VI semiconductor compound, a Group IV-VI semiconductor compound, a Group IV element or semiconductor compound, or any combination thereof.

[0178] Light of a wavelength in the first wavelength band generated from the third light emitting diode LED3 may be emitted to the outside without conversion. According to some embodiments, the light-transmitting layer 630 may be located in the third dam opening 503 of the dam layer 510 overlapping the third pixel electrode 313. When viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the light-transmitting layer 630 may overlap the third pixel electrode 313. The light-transmitting layer 630 may include a photosensitive polymer having light transmittance and scattering particles.

[0179] The encapsulation panel 20 may be placed over the display panel 10 so that the circuit layer 200, the light emitting diode layer 300, and the encapsulation layer 400 are located between the encapsulation panel 20 and the first substrate 100. Figure 2 described, in the display area DA (see Figure 2 ) The sealing member 700 can be used externally (see Figure 2 ) attaches the display panel 10 to the packaging panel 20.

[0180] The encapsulation panel 20 may include a second substrate 900 and an ion supply layer 800 on a surface (lower surface) of the second substrate 900 facing the first substrate 100. The ion supply layer 800 may include first to third organic material layers 810, 820, and 830.

[0181] The second substrate 900 may include glass or a light-transmitting organic material. The first to third grooves 901, 902, and 903 may be defined in the surface (lower surface) of the second substrate 900 facing the first substrate 100. The first groove 901 may correspond to the first light-emitting diode LED1, the second groove 902 may correspond to the second light-emitting diode LED2, and the third groove 903 may correspond to the third light-emitting diode LED3. When viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the first groove 901 may overlap with the first pixel opening OP1 and the first dam opening 501, the second groove 902 may overlap with the second pixel opening OP2 and the second dam opening 502, and the third groove 903 may overlap with the third pixel opening OP3 and the third dam opening 503. In the thickness direction, the surface (lower surface) of the second substrate 900 facing the first substrate 100 and the uppermost surface of the display panel 10 (i.e., the surface (upper surface) of the color conversion layer 600 facing the second substrate 900) may be spaced apart from each other.

[0182] The depth of the first groove 901, the depth of the second groove 902, and the depth of the third groove 903 may be the same as or different from each other. According to some embodiments, the depth of the third groove 903 may be different from the depth of the first groove 901 and the depth of the second groove 902. According to some embodiments, the depth of the third groove 903 may be greater than the depth of the first groove 901 and the depth of the second groove 902. According to some embodiments, the depth of the first groove 901 and the depth of the second groove 902 may be the same as each other.

[0183] The first organic material layer 810 may be located in the first groove 901 to fill the first groove 901. The thickness t1 of the first organic material layer 810 may be less than or equal to the depth of the first groove 901. The second organic material layer 820 may be located in the second groove 902 to fill the second groove 902. The thickness t2 of the second organic material layer 820 may be less than or equal to the depth of the second groove 902. The third organic material layer 830 may be located in the third groove 903 to fill the third groove 903. The thickness t3 of the third organic material layer 830 may be less than or equal to the depth of the third groove 903.

[0184] The thickness t1 of the first organic material layer 810, the thickness t2 of the second organic material layer 820, and the thickness t3 of the third organic material layer 830 may be the same as or different from each other. According to some embodiments, the thickness t3 of the third organic material layer 830 may be different from the thickness t1 of the first organic material layer 810 and the thickness t2 of the second organic material layer 820. According to some embodiments, the thickness t3 of the third organic material layer 830 may be greater than the thickness t1 of the first organic material layer 810 and the thickness t2 of the second organic material layer 820. According to some embodiments, the thickness t1 of the first organic material layer 810 and the thickness t2 of the second organic material layer 820 may be the same as each other (or substantially the same as each other). According to some embodiments, each of the thickness t1 of the first organic material layer 810 and the thickness t2 of the second organic material layer 820 may be about 600 nm to about 1000 nm, and the thickness t3 of the third organic material layer 830 may be about 1000 nm to about 1400 nm. According to some embodiments, each of the thickness t1 of the first organic material layer 810 and the thickness t2 of the second organic material layer 820 may be about 750 nm, and the thickness t3 of the third organic material layer 830 may be about 1400 nm. Since the thicknesses of the organic material layers of the respective pixels configured to emit light of different colors are formed differently, the light efficiency of the respective pixels may be relatively improved.

[0185] The distance between the surface (lower surface) of each of the first organic material layer 810, the second organic material layer 820, and the third organic material layer 830 facing the first substrate 100 and the surface (upper surface) of each of the first quantum dot layer 610, the second quantum dot layer 620, and the light-transmitting layer 630 facing the second substrate 900 may be greater than the distance between the surface (lower surface) of the second substrate 900 facing the first substrate 100 and the surface (upper surface) of the first quantum dot layer 610 facing the second substrate 900. That is, the surface (lower surface) of the ion supply layer 800 facing the first substrate 100 and the surface (upper surface) of the color conversion layer 600 facing the second substrate 900 may be spaced apart from each other and may not contact each other. A vacuum region in which a filler or the like is not placed may be located between the first quantum dot layer 610 and the first organic material layer 810, between the second quantum dot layer 620 and the second organic material layer 820, and between the light-transmitting layer 630 and the third organic material layer 830. That is, the color conversion layer 600 and the ion supply layer 800 may be arranged to face each other through the sealing member 700 (see Figure 2 ) A cavity C is defined between the color conversion layer 600 and the ion supply layer 800 (see Figure 2 ).

[0186] The ion supply layer 800 may include a resin containing an acidic group that releases hydrogen ions by polymerization when exposed to ultraviolet rays or heat. The ion supply layer 800 may include a polymer having a carboxyl group. According to some embodiments, the ion supply layer 800 may include polyacrylic acid.

[0187] Fig. 7A is a voltage-current density graph of a display device according to some embodiments and a display device according to a comparative example, and Figure 7B 1 is a brightness-efficiency graph of a display device according to some embodiments and a display device according to a comparative example.

[0188] In Comparative Example C1, a display device is manufactured in which an ion supply layer is applied without forming a groove in the second substrate, and the ion supply layer directly contacts the uppermost surface of the display panel, for example, the upper surface of the color conversion layer. In contrast, in Embodiment E1, a display device is manufactured in which a groove is formed in the second substrate, the ion supply layer is located in the groove, and the ion supply layer is spaced apart from the color conversion layer in the thickness direction.

[0189] refer to Fig. 7A It can be seen that in order to achieve the same current density, implementation example E1 requires a smaller voltage than comparison example C1.

[0190] refer to Figure 7B It can be seen that under the same current density conditions, the brightness and efficiency of implementation example E1 are significantly better than those of comparison example C1.

[0191] Fig. 8A , Figure 8B and Figure 8C is a graph of efficiency according to the thickness of an organic material layer of each sub-pixel according to some embodiments. Fig. 8A is a graph of efficiency according to thickness of a red sub-pixel configured to emit light of a wavelength in the second wavelength band, Figure 8B is an efficiency graph according to thickness of a green sub-pixel configured to emit light of a wavelength in a third wavelength band, and Figure 8C is a graph of efficiency according to thickness of a blue sub-pixel configured to emit light of a wavelength in a first wavelength band.

[0192] Table 1 below shows efficiency according to the thickness of the organic material layer of each sub-pixel.

[0193] Table 1

[0194]

[0195] refer to FIG. 8A to FIG. 8CAs shown in Table 1, when the thickness of the organic material layer is about 750 nm, the red sub-pixel has a maximum efficiency of 6.8 cd / A, and when the thickness of the organic material layer is about 750 nm, the green sub-pixel has a maximum efficiency of 29.6 cd / A. When the thickness of the organic material layer is about 1400 nm, the blue sub-pixel has a maximum conversion efficiency of 69.6 cd / A / y. That is, according to the thickness of the organic material layer, the maximum efficiencies of the red sub-pixel and the green sub-pixel increase by about 66% and about 77%, respectively, compared with the minimum efficiency, and the maximum conversion efficiency of the blue sub-pixel increases by about 500% compared with the minimum conversion efficiency.

[0196] Because the thickness of the organic material layer is different depending on the material properties of the constituent materials forming each sub-pixel, in a display device according to some embodiments, a different thickness of the organic material layer is formed for each sub-pixel, and accordingly, light efficiency is relatively improved and relatively high-quality images can be displayed.

[0197] According to some embodiments, the display device can display relatively high-quality images and can implement relatively improved light efficiency. However, the scope of the embodiments according to the present disclosure is not limited by these characteristics.

[0198] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the claims and their equivalents.

Claims

1. A display device, comprising: a first substrate; a light emitting diode layer extending over the first substrate and comprising light emitting diodes configured to emit light of wavelengths in a first wavelength band; a color conversion layer on the light-emitting diode layer and comprising a quantum dot layer or a light-transmitting layer overlapping the light-emitting diode; a second substrate extending over the first substrate such that the light emitting diode layer and the color conversion layer are between the first substrate and the second substrate, and comprising a groove in a surface of the second substrate facing the first substrate, the groove overlapping the light emitting diode; as well as An ion supply layer fills the slot. 2 . The display device according to claim 1 , wherein the ion supply layer includes a polymer having a carboxyl group. The display device according to claim 1 , wherein the ion supply layer comprises polyacrylic acid. 4 . The display device according to claim 1 , further comprising a sealing member between the first substrate and the second substrate. 5 . The display device of claim 4 , wherein a cavity is defined between the first substrate and the second substrate by the sealing member. 6 . The display device of claim 5 , wherein the color conversion layer and the ion supply layer face each other, and the cavity is between the color conversion layer and the ion supply layer. The display device according to claim 4 , wherein the sealing member comprises a photocurable resin. 8 . The display device according to claim 1 , wherein a surface of the second substrate facing the first substrate is spaced apart from a surface of the color conversion layer facing the second substrate in a thickness direction.

9. The display device according to claim 8, wherein a distance between a surface of the ion supply layer facing the first substrate and a surface of the color conversion layer facing the second substrate is greater than or equal to a distance between a surface of the second substrate facing the first substrate and a surface of the color conversion layer facing the second substrate.

10. A display device, comprising: a first substrate; a light emitting diode layer extending over the first substrate and including a first light emitting diode, a second light emitting diode, and a third light emitting diode each configured to emit light of a wavelength in a first wavelength band; an encapsulation layer, on the light-emitting diode layer; a dam layer on the encapsulation layer and defining a first dam opening overlapping the first light emitting diode, a second dam opening overlapping the second light emitting diode, and a third dam opening overlapping the third light emitting diode; a first quantum dot layer in the first bank opening and configured to convert light of wavelengths in the first wavelength band into light of wavelengths in a second wavelength band; a second quantum dot layer in the second bank opening and configured to convert light of wavelengths in the first wavelength band into light of wavelengths in a third wavelength band; a second substrate extending over the first substrate such that the light emitting diode layer, the encapsulation layer, and the barrier layer are between the first substrate and the second substrate, wherein the second substrate comprises a first groove overlapping the first light emitting diode, a second groove overlapping the second light emitting diode, and a third groove overlapping the third light emitting diode, each of the first groove, the second groove, and the third groove being defined in a surface of the second substrate facing the first substrate; as well as The ion supply layer includes a first organic material layer filling the first groove, a second organic material layer filling the second groove, and a third organic material layer filling the third groove. 11 . The display device according to claim 10 , wherein the ion supply layer includes a polymer having a carboxyl group. 12 . The display device according to claim 10 , wherein the ion supply layer comprises polyacrylic acid.

13. The display device according to claim 10, further comprising a sealing member between the first substrate and the second substrate, A cavity is defined between the first substrate and the second substrate by the sealing member. 14 . The display device of claim 13 , wherein the cavity is between the first quantum dot layer and the first organic material layer and between the second quantum dot layer and the second organic material layer. 15 . The display device of claim 10 , further comprising a light-transmitting layer in the third bank opening and configured to transmit light of a wavelength in the first wavelength band. 16 . The display device according to claim 15 , wherein the light of the first wavelength band is blue light, the light of the second wavelength band is red light, and the light of the third wavelength band is green light. 17 . The display device according to claim 15 , wherein a thickness of the third organic material layer is different from a thickness of the first organic material layer and a thickness of the second organic material layer. 18 . The display device according to claim 15 , wherein a thickness of the third organic material layer is greater than a thickness of the first organic material layer and a thickness of the second organic material layer. 19 . The display device according to claim 18 , wherein a thickness of the first organic material layer is equal to a thickness of the second organic material layer. 20 . The display device of claim 10 , wherein a surface of the second substrate facing the first substrate is spaced apart from a surface of the first quantum dot layer facing the second substrate and a surface of the second quantum dot layer facing the second substrate, respectively.

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