Display panel, preparation method, display module and display device

Abstract

The embodiment of the invention provides a display panel, a preparation method, a display module and a display device, relates to the technical field of display, and aims to improve the phenomenon of powdering when the edge of the display panel is lightened. The display panel comprises a display substrate, a packaging layer and a touch laminated layer. The packaging layer is arranged on the light emitting side of the display substrate. The packaging layer comprises at least one inorganic layer, the at least one inorganic layer comprises a first inorganic layer, and the first inorganic layer is the inorganic layer closest to the display substrate in the at least one inorganic layer. The touch laminated layer is arranged on the side, away from the display substrate, of the packaging layer. The touch laminated layer comprises at least one insulating layer. The edge part of at least one insulating layer makes contact with the edge part of the first inorganic layer, and the orthographic projection of the lower boundary of the edge part of one insulating layer on the display substrate roughly coincides with the orthographic projection of the upper boundary of the edge part of the first inorganic layer on the display substrate. The method is used for image display.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel and a preparation method thereof, a display module, and a display device. Background Art

[0002] With the rapid development of display technology, display devices have gradually become prevalent in people's lives. Among them, organic light emitting diodes (OLED) are widely used in smart products such as mobile phones, televisions, and laptops due to their advantages such as self-luminescence, low power consumption, wide viewing angle, fast response speed, high contrast, and flexible display. In the related art, the edge of the display panel appears powdery when it is lit. Summary of the invention

[0003] The present disclosure provides a display panel and a manufacturing method thereof, a display module, and a display device, so as to improve the phenomenon that powdering occurs when the edge of the display panel is lit.

[0004] On the one hand, a display panel is provided. The display panel includes a display substrate, an encapsulation layer and a touch stack. The display substrate has a light-emitting side and a non-light-emitting side that are arranged opposite to each other. The encapsulation layer is arranged on the light-emitting side of the display substrate. The encapsulation layer includes at least one inorganic layer, and the at least one inorganic layer includes a first inorganic layer, and the first inorganic layer is the inorganic layer closest to the display substrate among the at least one inorganic layer. The touch stack is arranged on the side of the encapsulation layer away from the display substrate. The touch stack includes at least one insulating layer. There is at least one insulating layer whose edge portion contacts the edge portion of the first inorganic layer, and the orthographic projection of the lower boundary of the edge portion of the insulating layer on the display substrate roughly coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate.

[0005] In some embodiments, the touch stack includes a first metal layer, a first insulating layer, and a second metal layer. The first metal layer contacts the encapsulation layer. The first insulating layer is disposed on a side of the first metal layer away from the encapsulation layer. An edge portion of the first insulating layer contacts an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the first insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the first inorganic layer on the display substrate. The second metal layer is disposed on a side of the first insulating layer away from the encapsulation layer.

[0006] In some embodiments, one of the first metal layer and the second metal layer includes a plurality of first touch electrodes, a plurality of second touch electrodes, and a plurality of first connecting portions, and the other includes a plurality of second connecting portions. Furthermore, two adjacent first touch electrodes are connected to the first connecting portion, and two adjacent second touch electrodes are connected to the second connecting portion. The first insulating layer is provided with a plurality of first overlapping holes, and the second connecting portion extends into the first overlapping holes and is connected to the second touch electrodes. The slope angle of the first insulating layer at the side wall of the first overlapping hole is 64° to 80°.

[0007] In some embodiments, the slope angle of the sidewall of the edge portion of the first insulating layer is 50° to 65°, and the slope angle of the sidewall of the edge portion of the first inorganic layer is 65° to 80°.

[0008] In some embodiments, the edge portions of the first insulating layer and the first inorganic layer are provided with a second overlap hole penetrating the first insulating layer and the first inorganic layer. The second metal layer includes a transition portion, the display substrate includes a transition line, the transition portion extends into the second overlap hole and is connected to the transition line, the edge portion of the first insulating layer has a slope angle of 50° to 65° at the side wall of the second overlap hole, and the edge portion of the first inorganic layer has a slope angle of 65° to 80° at the side wall of the second overlap hole.

[0009] In some embodiments, the display panel includes a display area and a peripheral area surrounding the display area, and the peripheral area includes a wiring area and a pad area. The pad area is located on one side of the display area; the wiring area surrounds a portion of the display area and is connected to the pad area. The first inorganic layer covers the display area and extends to the peripheral area.

[0010] Along the display area to the pad area, the pad area includes a transfer area, a bending area and a circuit board binding area in sequence. The transfer area is provided with a second overlap hole, and the circuit board binding area is provided with a binding pad. The first insulating layer and the first inorganic layer expose the first area and cover the second area. The first area includes the area of ​​the second overlap hole, the area of ​​the binding pad and the bending area; the second area is the area of ​​the pad area other than the first area.

[0011] In some embodiments, the encapsulation layer further includes a second inorganic layer and a first organic layer. The second inorganic layer is located on a side of the first inorganic layer away from the display substrate. The boundary of the orthographic projection of the second inorganic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the first inorganic layer on the display substrate. The edge portion of the first insulating layer also contacts the side wall of the second inorganic layer. The first organic layer is located between the first inorganic layer and the second inorganic layer. And the boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the second inorganic layer on the display substrate.

[0012] In some embodiments, the display substrate includes a substrate and an anti-crack structure. The anti-crack structure is disposed on a side of the substrate close to the encapsulation layer and is located in the routing area. The anti-crack structure surrounds part of the display area and ends at the pad area. Moreover, the orthographic projection of the anti-crack structure on the substrate is located outside the orthographic projection of the first inorganic layer on the substrate.

[0013] The minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is a first distance, and the minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is a second distance. The first distance is greater than the second distance.

[0014] In some embodiments, the distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is 20 μm to 50 μm. And / or, the distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is 50 μm to 100 μm.

[0015] In some embodiments, the display substrate further comprises a substrate and a blocking dam. The blocking dam is disposed on a side of the substrate close to the encapsulation layer and is located in the routing area. The blocking dam surrounds the display area. Moreover, the orthographic projection of the blocking dam on the substrate is located between two boundaries of the orthographic projections of the first organic layer and the second inorganic layer on the substrate.

[0016] In some embodiments, in the routing area, a distance between a boundary of an orthographic projection of the first inorganic layer on the display substrate and a boundary of an orthographic projection of the second inorganic layer on the display substrate is 0 μm to 30 μm.

[0017] In some embodiments, the touch stack includes a second insulating layer, a first metal layer, a first insulating layer, and a second metal layer. The second insulating layer contacts the encapsulation layer; an edge portion of the second insulating layer contacts an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the second insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the first inorganic layer on the display substrate. The first metal layer is disposed on a side of the second insulating layer away from the encapsulation layer.

[0018] The first insulating layer is arranged on a side of the first metal layer away from the encapsulation layer; the orthographic projection of the lower boundary of the edge portion of the first insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge portion of the second insulating layer on the display substrate. The second metal layer is arranged on a side of the first insulating layer away from the encapsulation layer.

[0019] In some embodiments, the materials of the first inorganic layer and the insulating layer include silicide, and the material of one of the first inorganic layer and the insulating layer includes silicon oxide, and the material of the other does not include silicon oxide.

[0020] In the display panel provided by the embodiment of the present disclosure, the first inorganic layer can be etched synchronously with the insulating layer in contact to achieve patterning, thereby improving production efficiency. At the same time, the etching process will not adversely affect the film thickness of the edge of the formed first inorganic layer, thereby avoiding the process of using the first mask plate to deposit and form the patterned first inorganic layer. This can not only improve the uniformity of the film thickness of the first inorganic layer, and improve the phenomenon of powdering when the edge of the display panel is lit, but also save a layer of mask plate (first mask plate), thereby reducing costs.

[0021] In another aspect, a display module is provided, comprising a display panel as described in any one of the above embodiments and a circuit board, wherein the circuit board is connected to the display panel.

[0022] In another aspect, a display device is provided, comprising a housing and the display module as described in the above embodiment, wherein the display module is disposed in the housing.

[0023] On the other hand, a method for preparing a display panel is provided. The method for preparing a display panel includes: preparing a display substrate. The display substrate has a display area and a peripheral area surrounding the display area, the peripheral area includes a pad area and a wiring area, the pad area is located on one side of the display area; the wiring area surrounds part of the display area and is connected to the pad area; the display substrate includes a substrate and an anti-crack structure and a blocking dam arranged on the substrate; the anti-crack structure surrounds part of the display area and ends at the pad area; the blocking dam surrounds the display area and is located between the anti-crack structure and the display area.

[0024] A first inorganic film is formed on the light-emitting side of the display substrate. The first inorganic film is in contact with the display substrate, and the boundary of the first inorganic film is substantially flush with the boundary of the substrate. A first metal layer is formed on the side of the first inorganic film away from the display substrate. A first insulating film is formed on the side of the first metal layer away from the display substrate. The boundary of the first insulating film is substantially flush with the boundary of the substrate. The first insulating film and the first inorganic film are etched synchronously to form a first insulating layer and a first inorganic layer. The boundary of the range of the orthographic projection of the first inorganic layer and the first insulating layer on the substrate is located between two opposite boundaries of the orthographic projection of the anti-crack structure and the blocking dam on the substrate. A second metal layer is formed on the side of the first insulating layer away from the display substrate.

[0025] In some embodiments, the synchronous etching adopts a dry etching process.

[0026] In some embodiments, in a process of simultaneously etching the first insulating film and the first inorganic film to form a first inorganic layer and a first insulating layer, an etching selectivity ratio of the first insulating film to the first inorganic film is greater than 1.

[0027] In some embodiments, before forming the first metal layer on the side of the first inorganic film away from the display substrate, the method for preparing the display panel further includes: forming a second insulating film on the side of the first inorganic film away from the display substrate, wherein the boundary of the second insulating film is substantially flush with the boundary of the substrate. In the process of synchronously etching the first insulating film and the first inorganic film to form the first inorganic layer and the first insulating layer, the second insulating film is also synchronously etched to form the second insulating layer.

[0028] In some embodiments, before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method for preparing the display panel further includes: forming a first organic layer on the side of the first inorganic thin film away from the display substrate. The boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the inner boundary of the orthographic projection of the blocking dam on the display substrate. A second inorganic layer is formed on the side of the first organic layer away from the display substrate. The boundary of the orthographic projection of the second inorganic layer on the display substrate is located between two opposite boundaries of the orthographic projection of the blocking dam and the first inorganic layer on the substrate.

[0029] The beneficial effects of the display panel manufacturing method, display module and display device provided by the embodiments of the present disclosure are the same as the beneficial effects of the display panel provided by the above technical solution, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of the signal, etc.

[0031] Figure 1 is a structural diagram of a display device according to some embodiments;

[0032] Figure 2 is a structural diagram of another display device according to some embodiments;

[0033] Figure 3 for Figure 1 Sectional view along section line AA';

[0034] Figure 4 is a structural diagram of a touch stack of a display panel according to some embodiments;

[0035] Figure 5 for Figure 4 A sectional view along section line EE';

[0036] Figure 6 for Figure 4 Another cross-sectional view along section line EE';

[0037] Figure 7 is a structural diagram of a display panel according to some embodiments;

[0038] Figure 8 for Figure 7 A sectional view along section line FF';

[0039] Fig. 9 for Figure 7 Another cross-sectional view along the section line FF';

[0040] Fig.10 for Figure 7 A sectional view along section line GG';

[0041] Fig.11 for Figure 7 Another cross-sectional view along the section line GG';

[0042] Fig.12 for Figure 7 A sectional view along section line HH';

[0043] Fig.13 for Figure 7 Another cross-sectional view along section line HH';

[0044] Fig.14 is a partial enlarged view of a first overlapping hole of a display panel according to some embodiments;

[0045] Fig.15 is a partial enlarged view of a second overlapping hole of a display panel according to some embodiments;

[0046] Fig.16 is a partial enlarged view of the edge of the first insulating layer and the first inorganic layer of the display panel according to some embodiments;

[0047] Figure 17 to Figure 19 is a flow chart of a method for preparing a display panel according to some embodiments;

[0048] Fig. 20 and Fig.21 A process diagram of a method for preparing a display panel according to some embodiments. DETAILED DESCRIPTION

[0049] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0050] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0051] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0052] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0053] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0054] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0055] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0056] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0057] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0058] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality may be, for example, the difference between the two equalities is less than or equal to 5% of either one.

[0059] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0060] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0061] like Figure 1As shown, some embodiments of the present disclosure provide a display device 1000, which may be any device that displays images, whether in motion (eg, video) or fixed (eg, still image), and whether text or text.

[0062] Exemplarily, the display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a virtual reality (VR) device, etc.

[0063] For example, Figure 1 As shown, the display device 1000 may be a portable display product; for example, the display device 1000 may be Figure 1 As another example, Figure 2 As shown, the display device 1000 may be a wearable device; for example, the display device 1000 may be Figure 2 The watch shown in.

[0064] The display device 1000 is used as an example below. Figure 1 Taking the mobile phone shown as an example, some embodiments of the present disclosure are schematically described, but the implementation methods of the present disclosure are not limited thereto.

[0065] In some embodiments, see Figure 3 The display device 1000 includes a display module 100 and a housing 200, wherein the display module 100 is disposed in the housing 200. The longitudinal section of the housing 200 may be, for example, U-shaped.

[0066] For example, see Figure 3 The display module 100 may include other electronic components such as a display panel 10, a cover plate 20, and a circuit board 30. The display panel 10 and the circuit board 30 may be disposed in the housing 200, and the cover plate 20 may be disposed at the opening of the housing 200.

[0067] The display panel 10 has a display side and a back side that are arranged opposite to each other. The circuit board 30 can be bound and connected to the display panel 10 at the end of the display panel 10 and can be bent to the back side of the display panel 10 along with the display panel 10 .

[0068] It should be noted that the display side refers to the side of the display panel 10 that displays an image ( Figure 3 The back side refers to the other side opposite to the display side ( Figure 3 The lower side of the display panel 10).

[0069] In addition, the display panel 10 mentioned above includes various types, which can be selected and set according to actual needs.

[0070] Exemplarily, the display panel 10 may be an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, etc., which is not specifically limited in the embodiments of the present disclosure.

[0071] The following takes the above-mentioned display panel 10 as an organic light emitting diode display panel as an example to schematically illustrate some embodiments of the present disclosure, but the implementation of the present disclosure is not limited to this, and any other display panel 10 can also be considered as long as the same technical concept is applied.

[0072] In some embodiments, see Figure 4 and Figure 5 The display panel 10 includes a display substrate 110 and an encapsulation layer 120 for encapsulating the display substrate 110 .

[0073] The display substrate 110 has light-emitting sides ( Figure 5 The upper side of the display substrate 110) and the non-light-emitting side ( Figure 5 The encapsulation layer 120 is disposed on the light-emitting side of the display substrate 110 to improve the barrier performance of the display panel 10 against water and oxygen.

[0074] In some examples, such as Figure 5 As shown, the encapsulation layer 120 is directly formed on the light-emitting side of the display substrate 110 by a thin film encapsulation process, that is, no other film layer is arranged between the encapsulation layer 120 and the display substrate 110. In this way, the thickness of the display panel 10 is small, which is conducive to achieving lightness and thinness.

[0075] For example, Figure 5 As shown, the encapsulation layer 120 includes at least one inorganic layer 12 , and the at least one inorganic layer 12 includes a first inorganic layer 121 . The first inorganic layer 121 is the inorganic layer 12 closest to the display substrate 110 among the at least one inorganic layer 12 .

[0076] The thickness of the first inorganic layer 121 may be 0.5 μm to 1.5 μm. For example, the thickness of the first inorganic layer 121 may be any one of 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm and 1.5 μm.

[0077] In the related art, a patterned first inorganic layer is directly formed on a display substrate through a chemical vapor deposition process with a first mask plate acting as a mask. However, during the formation of the first inorganic layer, a gap exists between the first mask plate and the display substrate, and material is deposited in the gap, so that the film thickness of the edge of the prepared first inorganic layer is relatively thin, causing the edge of the display panel to appear powdery when it is lit.

[0078] Based on this, see Figure 5 Some embodiments of the present disclosure provide a display panel 10 including a display substrate 110 , an encapsulation layer 120 and a touch stack 130 .

[0079] Among them, Figure 5 and Figure 6 As shown, the touch stack 130 is disposed on a side of the encapsulation layer 120 away from the display substrate 110 .

[0080] See also Figure 7 to Figure 13 The touch stack 130 includes at least one insulating layer 13. The edge portion of at least one insulating layer 13 contacts the edge portion of the first inorganic layer 121, and the orthographic projection of the lower boundary (close to the boundary of the display substrate 110) of the edge portion of the insulating layer 13 on the display substrate 110 substantially coincides with the orthographic projection of the upper boundary (close to the boundary of the insulating layer 13) of the edge portion of the first inorganic layer 121 on the display substrate 110.

[0081] It should be noted that the edge portion of the insulating layer 13 and the inorganic layer 12 is the insulating layer 13 and the inorganic layer 12 located on the second inorganic layer 123 mentioned below (see Figure 7 ) outside the boundaries of the

[0082] In addition, the material of the inorganic layer 12 and the insulating layer 13 includes a silicon-based material, for example, the material of the inorganic layer 12 and the insulating layer 13 includes at least one of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide.

[0083] For example, see Figure 5 and Figure 6 , the first inorganic layer 121 and the insulating layer 13 are made of different materials. Exemplarily, the materials of the first inorganic layer 121 and the insulating layer 13 include silicide, and the material of one of the first inorganic layer 121 and the insulating layer 13 includes silicon oxide, and the material of the other does not include silicon oxide.

[0084] For example, the material of the first inorganic layer 121 includes silicon oxynitride and / or silicon oxide; the material of the insulating layer 13 includes silicon nitride and / or silicon carbonitride. For example, the material of the first inorganic layer 121 is silicon oxynitride, and the material of the insulating layer 13 is silicon nitride. In this way, one of the first inorganic layer 121 and the insulating layer 13 contains oxygen atoms, while the other does not, so that the film quality can be distinguished by detecting whether the film layer contains oxygen atoms.

[0085] It should be understood that the touch stack 130 can be directly formed on the side of the packaging layer 120 of the display panel 10 away from the display substrate 110 through a semiconductor process. That is, no other film layer is provided between the touch stack 130 and the packaging layer 120, which is conducive to achieving a thinner display panel 10.

[0086] At this time, the preparation process of the insulating layer 13 in the touch stack 130 is specifically as follows: firstly, an insulating film is deposited on the entire surface of the encapsulation layer 120; and then, a second mask plate is used as a mask to form a patterned insulating layer 13 through an etching process.

[0087] On this basis, since the upper boundary of the edge portion of the first inorganic layer 121 roughly coincides with the lower boundary of the insulating layer 13 it contacts, the first inorganic layer 121 can also first deposit an inorganic thin film on the entire surface of the display substrate 110, and while using the second mask plate as a mask to form a patterned insulating layer 13 through an etching process, the inorganic thin film is simultaneously etched to form a patterned first inorganic layer 121. For details, please refer to the preparation method of the display panel 10 mentioned below.

[0088] As can be seen from the above, the first inorganic layer 121 can be etched synchronously with the insulating layer 13 in contact to achieve patterning, thereby improving production efficiency. At the same time, the etching process will not adversely affect the film thickness of the edge of the formed first inorganic layer 121, thereby avoiding the process of using the first mask plate to deposit and form the patterned first inorganic layer 121, which can not only improve the uniformity of the film thickness of the first inorganic layer 121, and improve the phenomenon of powdering when the edge of the display panel 10 is lit, but also save a layer of mask plate (first mask plate), thereby reducing costs.

[0089] In some embodiments, Figure 5 As shown, the touch stack 130 includes a first insulating layer 131 , a second insulating layer 132 , a first metal layer 133 and a second metal layer 134 .

[0090] like Figure 5 As shown, the second insulating layer 132 contacts the encapsulation layer 120. The thickness of the second insulating layer 132 may be 0.2 μm to 0.4 μm. For example, the thickness of the second insulating layer 132 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm and 0.4 μm.

[0091] In addition, see Figure 5 , Figure 7 and Figure 8 , the edge of the second insulating layer 132 contacts the edge of the first inorganic layer 121, and the orthographic projection of the lower boundary of the edge of the second insulating layer 132 on the display substrate 110 substantially coincides with the orthographic projection of the upper boundary of the edge of the first inorganic layer 121 on the display substrate 110. At this time, the first inorganic layer 121 can be patterned by synchronous etching with the second insulating layer 132.

[0092] like Figure 5 As shown, the first metal layer 133 is disposed on a side of the second insulating layer 132 away from the encapsulation layer 120, the first insulating layer 131 is disposed on a side of the first metal layer 133 away from the encapsulation layer 120, and the second metal layer 134 is disposed on a side of the first insulating layer 131 away from the encapsulation layer 120. That is, the first insulating layer 131 is disposed between the first metal layer 133 and the second metal layer 134.

[0093] The thickness of the first insulating layer 131 may be 0.2 μm to 0.4 μm. For example, the thickness of the first insulating layer 131 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm and 0.4 μm.

[0094] In addition, see Figure 5 , Figure 7 and Figure 8 , the orthographic projection of the lower boundary of the edge portion of the first insulating layer 131 on the display substrate 110 substantially coincides with the orthographic projection of the upper boundary of the edge portion of the second insulating layer 132 on the display substrate 110. At this time, the first insulating layer 131 and the second insulating layer 132 can be etched synchronously to achieve patterning.

[0095] Based on the above, the first inorganic layer 121 , the first insulating layer 131 and the second insulating layer 132 can be etched synchronously to achieve patterning, and the etching depth can be the sum of the thicknesses of the first inorganic layer 121 , the first insulating layer 131 and the second insulating layer 132 .

[0096] For example, the thickness of the first inorganic layer 121 is 1 μm, the thickness of the first insulating layer 131 is 0.35 μm, and the thickness of the second insulating layer 132 is 0.3 μm, and the etching depth is 1.65 μm.

[0097] It should be noted that the first inorganic layer 121 and the second insulating layer 132 can simultaneously serve as etching stop layers for patterning the first insulating layer 131 through an etching process, so as to prevent the first insulating layer 131 from being overetched and causing damage to the display substrate 110 .

[0098] In other embodiments, Figure 6 As shown, the touch stack 130 includes a first insulating layer 131 , a first metal layer 133 and a second metal layer 134 .

[0099] like Figure 6 As shown, the first metal layer 133 contacts the encapsulation layer 120. The first insulating layer 131 is disposed on a side of the first metal layer 133 away from the encapsulation layer 120. The second metal layer 134 is disposed on a side of the first insulating layer 131 away from the encapsulation layer 120. That is, the first insulating layer 131 is disposed between the first metal layer 133 and the second metal layer 134.

[0100] The thickness of the first insulating layer 131 may be 0.2 μm to 0.4 μm. For example, the thickness of the first insulating layer 131 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm and 0.4 μm.

[0101] In addition, see Figure 6 , Figure 7 and Fig. 9 The edge portion of the first insulating layer 131 contacts the edge portion of the first inorganic layer 121 , and the orthographic projection of the lower boundary of the edge portion of the first insulating layer 131 on the display substrate 110 roughly coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer 121 on the display substrate 110 .

[0102] At this time, the first inorganic layer 121 can be patterned by synchronous etching with the first insulating layer 131, and the etching depth can be the sum of the thickness of the first inorganic layer 121 and the first insulating layer 131. For example, the thickness of the first inorganic layer 121 is 1 μm, the thickness of the first insulating layer 131 is 0.35 μm, and the etching depth is 1.35 μm.

[0103] It should be noted that the first inorganic layer 121 can be used as an etching stop layer for patterning the first insulating layer 131 through an etching process, so as to prevent the first insulating layer 131 from being overetched and causing damage to the display substrate 110. In this way, compared with the related art, the touch stack 130 can reduce one insulating layer, simplify the process flow, increase the production capacity by about one time, reduce the process equipment and materials, and reduce the cost.

[0104] In the following, some embodiments of the present disclosure are schematically described by taking the touch stack 130 including the first insulating layer 131, the first metal layer 133 and the second metal layer 134 as an example, but the embodiments of the present disclosure are not limited thereto, and any other touch stack 130 may also be considered as long as the same technical concept is applied.

[0105] In some embodiments, see Figure 4In the first metal layer 133 and the second metal layer 134, one includes a plurality of first touch electrodes 41, a plurality of second touch electrodes 42, and a plurality of first connecting portions 43, and the other includes a plurality of second connecting portions 44. Furthermore, two adjacent first touch electrodes 41 are connected to the first connecting portions 43, and two adjacent second touch electrodes 42 are connected to the second connecting portions 44.

[0106] For example, Figure 4 and Figure 6 As shown, the first insulating layer 131 is provided with a plurality of first overlapping holes H1 , and the second connecting portions 44 extend into the first overlapping holes H1 to be connected with the second touch electrodes 42 .

[0107] Among them, Fig.14 As shown, based on the increase of etching depth, the slope angle α1 of the first insulating layer 131 on the side wall of the first overlapping hole H1 is 64° to 80°. For example, the slope angle α1 of the first insulating layer 131 on the side wall of the first overlapping hole H1 is any one of 64°, 65°, 68°, 70°, 72°, 73°, 75°, 77°, 78° and 80°.

[0108] Based on the above, the first touch electrode 41 and the second touch electrode 42 can form a capacitive node. By applying a pulse or alternating voltage to one of the first touch electrode 41 and the second touch electrode 42, a charge can be induced on the other, and the amount of the induced charge can be susceptible to external influences (such as the touch or proximity of a finger). When a finger touches or approaches the capacitive node, a capacitance change can occur at the capacitive node, and the capacitance change can be measured by the touch electrode that induces the charge. By measuring the capacitance change in the entire touch stack 130, the position of the touch or proximity can be determined.

[0109] In the following, some embodiments of the present disclosure are schematically described by taking the example that the first metal layer 133 includes a plurality of first touch electrodes 41 , a plurality of second touch electrodes 42 , and a plurality of first connecting portions 43 , and the second metal layer 134 includes a plurality of second connecting portions 44 , but the embodiments of the present disclosure are not limited thereto.

[0110] In some embodiments, Figure 7 As shown, the display panel 10 includes a display area A and a peripheral area B surrounding the display area A. The peripheral area B includes a wiring area C and a pad area D. The pad area D is located on one side of the display area A. The wiring area C surrounds part of the display area A and is connected to the pad area D.

[0111] It should be noted that, combined with Figure 4 The first touch electrodes 41 and the second touch electrodes 42 form a touch area, and the touch area covers the display area A.

[0112] Among them, Figure 7As shown, along the display area A to the pad area D, the pad area D includes a transfer area D1, a bending area D2, and a circuit board binding area D3. Fig.12 and Fig.13 , the display substrate 110 includes a binding pad 112, and the binding pad 112 is located in the circuit board binding area D3. That is, the circuit board binding area D3 is provided with a binding pad 112.

[0113] On this basis, combined with Figure 3 The circuit board 30 is connected to the display panel 10 through the binding pads 112 , and is bent to the back side of the display panel 10 along with the portion of the display panel 10 located in the bending area D2 .

[0114] For some examples, see Figure 10 to Figure 13 The display substrate 110 further includes a plurality of transfer lines 111 , and the plurality of transfer lines 111 are located on the same layer or two conductive layers.

[0115] For example, Figure 6 As shown, the display substrate 110 includes a substrate 1, a semiconductor layer ACT, a gate insulating layer GI, a gate conductive layer GT, an interlayer insulating layer ILD, a source-drain conductive layer SD, a passivation layer PVX, a flat layer PLN, an anode layer AND, a light-emitting layer EL, and a cathode layer CTD, which are arranged in sequence. At this time, the transfer line 111 can be located in the source-drain conductive layer SD.

[0116] It should be noted that the display substrate 110 is illustrated as including one gate conductive layer GT and one source-drain conductive layer SD. Of course, it may also include two or more gate conductive layers GT and source-drain conductive layers SD.

[0117] One end of the transfer line 111 is located in the transfer area D1 , and the other end extends through the bending area D2 and is connected to the binding pad 112 of the circuit board binding area D3 .

[0118] At this time, the signal lines of the display panel 10 are all connected to the adapter line 111 in the adapter area D1, and thus connected to the corresponding binding pad 112. In this case, the bending area D2 has only one or two conductive layers, which can reduce the bending resistance of the bending area D2 and reduce the risk of disconnection of the circuit routing in the bending area D2.

[0119] Based on the above, if Fig.10 and Fig.11 As shown, the edge portions of the first insulating layer 131 and the first inorganic layer 121 are further provided with a second overlap hole H2 penetrating the first insulating layer 131 and the first inorganic layer 121. The second metal layer 134 includes a transition portion 45, which extends into the second overlap hole H2 and is connected to the transition line 111, so that the first touch electrode 41 and the second touch electrode 42 are connected to the corresponding binding pad 112.

[0120] At this time, see Fig.10 and Fig.11 In order to form a second overlapping hole H2 with a larger area on the opening side so that the transition portion 45 can extend into the second overlapping hole H2 and connect with the transition line 111, the etching selectivity ratios of the first insulating layer 131 and the first inorganic layer 121 are different for the same etching gas. That is, the materials of the first insulating layer 131 and the first inorganic layer 121 are different. For example, the material of the first inorganic layer 121 includes silicon oxynitride, and the material of the first insulating layer 131 includes silicon nitride.

[0121] The etching selectivity ratio of the first insulating layer 131 to the first inorganic layer 121 is greater than 1, so as to form a second overlapping hole H2 with a larger area on the opening side. That is, the slope angle α2 of the edge portion of the first insulating layer 131 on the side wall of the second overlapping hole H2 is smaller than the slope angle α3 of the edge portion of the first inorganic layer 121 on the side wall of the second overlapping hole H2.

[0122] For example, Fig.15 As shown, the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 in the second overlapping hole H2 is 50° to 65°. For example, the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 is any one of 50°, 51°, 53°, 55°, 58°, 60°, 62° and 65°.

[0123] For example, Fig.15 As shown, the slope angle α3 of the side wall of the edge portion of the first inorganic layer 121 at the second overlapping hole H2 is 65° to 80°. For example, the slope angle α3 of the side wall of the edge portion of the first inorganic layer 121 is any one of 65°, 67°, 68°, 70°, 72°, 75°, 78° and 80°.

[0124] On this basis, see Fig.16 The slope angle α4 of the side wall of the edge portion of the first insulating layer 131 is substantially equal to the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 in the second overlapping hole H2. The slope angle α5 of the side wall of the edge portion of the first inorganic layer 121 is substantially equal to the slope angle α3 of the side wall of the edge portion of the first inorganic layer 121 in the second overlapping hole H2.

[0125] For example, see Fig.16 , the slope angle α4 of the side wall of the edge portion of the first insulating layer 131 and the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 at the second overlapping hole H2 are 50° to 65°. For example, the slope angle α4 of the side wall of the edge portion of the first insulating layer 131 is any one of 50°, 51°, 53°, 55°, 58°, 60°, 62° and 65°.

[0126] For example, see Fig.16 The slope angle α5 of the side wall of the edge portion of the first inorganic layer 121 is 65° to 80°. For example, the slope angle α5 of the side wall of the edge portion of the first inorganic layer 121 is any one of 65°, 67°, 68°, 70°, 72°, 75°, 78° and 80°.

[0127] In some embodiments, Figure 7 , Fig.11 and Fig.13 As shown, the pad region D further includes a first region M1 and a second region M2 , and the first insulating layer 131 and the first inorganic layer 121 expose the first region M1 and cover the second region M2 .

[0128] The first region M1 includes the region of the second overlapping hole H2, the region of the binding pad 112 and the bending region D2. The second region M2 is the region of the pad region D except the first region M1.

[0129] In some embodiments, Figure 5 and Figure 6 As shown, the encapsulation layer 120 further includes a first organic layer 122 and a second inorganic layer 123 .

[0130] like Figure 6 As shown, the second inorganic layer 123 is located on a side of the first inorganic layer 121 away from the display substrate 110. The boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is located between the display area A and the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110. The edge portion of the first insulating layer 13 also contacts the side wall of the second inorganic layer 123.

[0131] It should be noted that the material of the second inorganic layer 123 includes silicide. Exemplarily, the material of the second inorganic layer 123 includes silicon nitride. For example, the material of the second inorganic layer 123 includes silicon nitride.

[0132] The thickness of the second inorganic layer 123 may be 0.5 μm to 1 μm. For example, the thickness of the second inorganic layer 123 may be any one of 0.5 μm, 0.6 μm, 0.65 μm, 0.7 μm, 0.8 μm, 0.85 μm, 0.9 μm and 1 μm.

[0133] like Figure 6 and Figure 7 As shown, the first organic layer 122 is located between the first inorganic layer 121 and the second inorganic layer 123. Moreover, the boundary of the orthographic projection of the first organic layer 122 on the display substrate 110 is located between the display area A and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110.

[0134] Among them, in the routing area C, the distance between the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110 and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is 0μm to 30μm. For example, in the routing area C, the distance between the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110 and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is 10μm to 20μm. In this way, the packaging performance is better, and it can be avoided that when the first inorganic layer 121 and the first insulating layer 131 are simultaneously etched, the second inorganic layer 123 needs to be etched away simultaneously. The etching depth does not need to consider the thickness of the second inorganic layer 123, thereby reducing the risk of disconnection in the touch stack 130 due to over-etching.

[0135] In some embodiments, Figure 6 , Figure 7 and Fig. 9 As shown, the display substrate 110 includes a substrate 1 and a crack prevention structure 2, and the crack prevention structure 2 is used to prevent cracks from being generated during the process of cutting a display motherboard into a plurality of display substrates 110.

[0136] It should be noted that the crack prevention structure 2 may be a groove formed on the substrate 1 or a protrusion formed on the substrate 1 , and the figure takes the protrusion as an example for illustration.

[0137] like Figure 6 , Figure 7 and Fig. 9 As shown, the anti-crack structure 2 is disposed on one side of the substrate 1 close to the encapsulation layer 120 and is located in the wiring area C. The anti-crack structure 2 surrounds a portion of the display area A and ends at the pad area D. Moreover, the orthographic projection of the anti-crack structure 2 on the substrate 1 is located outside the orthographic projection of the first inorganic layer 121 on the substrate 1.

[0138] like Figure 7 and Fig. 9 As shown, the minimum distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is a first distance, and the minimum distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is a second distance. The first distance is greater than the second distance.

[0139] Exemplarily, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is 20 μm to 50 μm. For example, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is any one of 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm and 50 μm.

[0140] Exemplarily, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is 50 μm to 100 μm. For example, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is any one of 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 90 μm and 100 μm.

[0141] In some embodiments, see Figure 7 and Fig. 9 The display substrate 110 further includes a barrier dam 3 , and the barrier dam 3 is used to prevent overflow during the preparation process of the first organic layer 122 .

[0142] like Figure 7 and Fig. 9 As shown, the barrier dam 3 is disposed on one side of the substrate 1 close to the encapsulation layer 120 and is located in the wiring area C. The barrier dam 3 surrounds the display area A. Moreover, the orthographic projection of the barrier dam 3 on the substrate 1 is located between two boundaries of the orthographic projections of the first organic layer 122 and the second inorganic layer 123 on the substrate 1. There may be multiple barrier dams 3, and two are used as an example in the figure.

[0143] In some embodiments, see Fig. 9 The structures of the anti-crack structure 2 and the barrier dam 3 can be the same, so that the anti-crack structure 2 and the barrier dam 3 can be formed simultaneously through the same process, thereby simplifying the process flow and reducing the preparation cost.

[0144] Exemplarily, the crack prevention structure 2 and the blocking dam 3 can be manufactured together with other film layers in the display substrate 110 to simplify the manufacturing process. For example, the crack prevention structure 2 and the blocking dam 3 can be manufactured simultaneously with at least one of the gate insulating layer GI, the gate conductive layer GT, the interlayer insulating layer ILD, the source-drain conductive layer SD, the anode layer AND, the pixel defining layer PDL, and the cathode layer CTD in the display substrate 110, which is not specifically limited in the embodiments of the present disclosure.

[0145] The embodiment of the present disclosure also provides a method for preparing the display panel 10, see Fig.17 , the preparation method includes S100~S600.

[0146] S100: See Fig. 20 , preparing a display substrate 110.

[0147] In the above steps, refer to Figure 7 and Fig. 20 The display substrate 110 has a display area A and a peripheral area B surrounding the display area A. The peripheral area B includes a pad area C and a wiring area C. The pad area C is located on one side of the display area A. The wiring area C surrounds a portion of the display area A and is connected to the pad area C.

[0148] Among them, Fig. 20 As shown, the display substrate 110 includes a substrate 1 and a crack prevention structure 2 and a barrier dam 3 disposed on the substrate 1. The crack prevention structure 2 surrounds a portion of the display area A and terminates at the pad area C. The barrier dam 3 surrounds the display area A and is located between the crack prevention structure 2 and the display area A.

[0149] It should be noted that in order to facilitate the display of the positional relationship of the boundaries of each film layer, Fig. 20 The anti-crack structure 2 and the first inorganic layer 121 and the first insulating layer 131 are illustrated as surrounding the display area A, which does not mean that the anti-crack structure 2, the first inorganic layer 121 and the first insulating layer 131 surround the display area A. The anti-crack structure 2, the blocking dam 3, the first inorganic layer 121 and the first insulating layer 131 can be specifically referred to above, and the embodiments of the present disclosure are not described in detail here.

[0150] S200: See Fig. 20 , a first inorganic thin film 121 ′ is formed on the light-emitting side of the display substrate 110 .

[0151] In the above steps, if Fig. 20 As shown, the first inorganic film 121 ′ contacts the display substrate 110 , and the boundary of the first inorganic film 121 ′ is substantially flush with the boundary of the substrate 1 . In other words, the first inorganic film 121 ′ covers the entire surface of the display substrate 110 .

[0152] The first inorganic thin film 121 ′ may be formed by a deposition process, for example, the first inorganic thin film 121 ′ may be formed on the display substrate 110 by any one of atomic layer deposition, physical vapor deposition or chemical vapor deposition.

[0153] S300: See Fig.11 and Fig. 20 A first metal layer 133 is formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 .

[0154] In the above steps, the first metal layer 133 can be formed, for example, by a photolithography process, that is, by a mask, exposure, development and etching process.

[0155] It should be noted that the structure of the first metal layer 133 may be specifically referred to above, and will not be elaborated in detail in the embodiment of the present disclosure.

[0156] S400: See Fig.11 and Fig. 20 A first insulating film 131 ′ is formed on a side of the first metal layer 133 away from the display substrate 110 .

[0157] In the above steps, if Fig.11 and Fig. 20As shown, the boundary of the first insulating film 131 ′ is substantially flush with the boundary of the substrate 1. That is, the first insulating film 131 ′ covers the entire surface of the display substrate 110.

[0158] The first insulating film 131 ′ may be formed by a deposition process, for example, by any one of atomic layer deposition, physical vapor deposition or chemical vapor deposition, and formed on a side of the first metal layer 133 away from the display substrate 110 .

[0159] S500: See Fig.11 and Fig. 20 , the first insulating film 131 ′ and the first inorganic film 121 ′ are simultaneously etched to form a first insulating layer 131 and a first inorganic layer 121 .

[0160] In the above steps, the boundary of the range of the orthographic projection of the first inorganic layer 121 and the first insulating layer 131 on the substrate 1 is located between two opposite boundaries of the orthographic projection of the crack prevention structure 2 and the barrier dam 3 on the substrate 1. The remaining portion of the first insulating film 131' forms the first insulating layer 131, and the remaining portion of the first inorganic film 121' forms the first inorganic layer 121.

[0161] The synchronous etching may be performed by dry etching process. Exemplarily, the first insulating film 131 ′ and the first inorganic film 121 ′ are synchronously etched by plasma gas, and the plasma gas may include carbon tetrafluoride and / or chlorine.

[0162] In addition, in the process of S500 , the etching selection ratio of the first insulating film 131 ′ to the first inorganic film 121 ′ is greater than 1, so as to form a second overlapping hole H2 with a larger area on the opening side.

[0163] S600: See Fig.11 and Fig. 20 A second metal layer 134 is formed on a side of the first insulating layer 131 away from the display substrate 110 .

[0164] In the above steps, the second metal layer 134 can be formed, for example, by a photolithography process, that is, by a mask, exposure, development and etching process.

[0165] It should be noted that the structure of the second metal layer 134 may be specifically referred to above, and will not be elaborated in detail in the embodiment of the present disclosure.

[0166] As can be seen from the above, the first inorganic layer 121 can be etched synchronously with the first insulating layer 131 to achieve patterning, thereby improving production efficiency. At the same time, the etching process will not adversely affect the film thickness of the edge of the formed first inorganic layer 121, thereby avoiding the process of using the first mask plate to deposit and form the patterned first inorganic layer 121. This can not only improve the uniformity of the film thickness of the first inorganic layer 121, and improve the phenomenon of powdering when the edge of the display panel 10 is lit, but also save a layer of mask plate (first mask plate), thereby reducing costs.

[0167] In some embodiments, Fig.18 As shown, before S300, the preparation method further includes S210 to S220.

[0168] S210: See Fig. 20 A first organic layer 122 is formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 .

[0169] In the above steps, the boundary of the orthographic projection of the first organic layer 122 on the display substrate 110 is located between the display area A and the inner boundary of the orthographic projection of the barrier dam 3 on the display substrate 110 .

[0170] The first organic layer 122 may be formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 by using an inkjet printing process.

[0171] S220: See Fig. 20 A second inorganic layer 123 is formed on a side of the first organic layer 122 away from the display substrate 110 .

[0172] In the above steps, the boundary of the orthographic projection of the second inorganic layer 122 on the display substrate 110 is located between two opposite boundaries of the orthographic projection of the blocking dam 3 and the first inorganic layer 121 on the substrate 1 .

[0173] The third mask plate may be used as a mask, and the second inorganic layer 123 may be formed on the side of the first organic layer 122 away from the display substrate 110 through a deposition process. For example, the third mask plate may be used as a mask, and the second inorganic layer 123 may be formed on the side of the first organic layer 122 away from the display substrate 110 through any one of atomic layer deposition, physical vapor deposition, or chemical vapor deposition.

[0174] In some embodiments, Fig.19 As shown, before S300, the above preparation method further includes S230.

[0175] S230: See Fig.21 A second insulating film 132 ′ is formed on a side of the first inorganic film 121 ′ away from the display substrate 110 .

[0176] In the above steps, if Fig.21 As shown, the boundary of the second insulating film 132 ′ is substantially flush with the boundary of the substrate 1. That is, the second insulating film 132 ′ covers the entire surface of the display substrate 110 .

[0177] The second insulating film 132 ′ may be formed by a deposition process, for example, by any one of atomic layer deposition, physical vapor deposition or chemical vapor deposition, and formed on the side of the first inorganic film 121 ′ away from the display substrate 110 .

[0178] On this basis, in the process of S500, the second insulating film 132' is also etched synchronously to form the second insulating layer 132. The synchronous etching process is consistent with the above improvement, and the embodiment of the present disclosure is not repeated here. It should be noted that when the preparation method includes S210 and S220, S230 is after S220.

[0179] It should be noted that Fig.21 The anti-crack structure 2 and the first inorganic layer 121, the first insulating layer 131 and the second insulating layer 132 are illustrated as surrounding the display area A, which does not mean that the anti-crack structure 2, the first inorganic layer 121 and the first insulating layer 131 surround the display area A. The anti-crack structure 2, the blocking dam 3, the first inorganic layer 121, the first insulating layer 131 and the second insulating layer 132, etc. can be specifically referred to above, and the embodiments of the present disclosure are not described in detail here.

[0180] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A display panel, characterized in that: include: A display substrate having a light-emitting side and a non-light-emitting side arranged opposite to each other; An encapsulation layer is disposed on the light-emitting side of the display substrate; the encapsulation layer includes at least one inorganic layer, the at least one inorganic layer includes a first inorganic layer, and the first inorganic layer is the inorganic layer closest to the display substrate among the at least one inorganic layer; A touch stack is arranged on a side of the packaging layer away from the display substrate; the touch stack includes at least one insulating layer; an edge portion of at least one insulating layer is in contact with an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the insulating layer on the display substrate roughly coincides with an orthographic projection of an upper boundary of the edge portion of the first inorganic layer on the display substrate.

2. The display panel according to claim 1, characterized in that: The touch stack comprises: A first metal layer, in contact with the packaging layer; A first insulating layer, disposed on a side of the first metal layer away from the encapsulation layer; The edge portion of the first insulating layer contacts the edge portion of the first inorganic layer, and the orthographic projection of the lower boundary of the edge portion of the first insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate; The second metal layer is arranged on a side of the first insulating layer away from the packaging layer.

3. The display panel according to claim 2, characterized in that: One of the first metal layer and the second metal layer includes a plurality of first touch electrodes, a plurality of second touch electrodes, and a plurality of first connecting portions, and the other includes a plurality of second connecting portions; and two adjacent first touch electrodes are connected to the first connecting portions, and two adjacent second touch electrodes are connected to the second connecting portions; The first insulating layer is provided with a plurality of first overlapping holes, and the second connecting portion extends into the first overlapping holes to be connected with the second touch electrodes; the slope angle of the side wall of the first insulating layer at the first overlapping holes is 64° to 80°.

4. The display panel according to claim 2, characterized in that: The slope angle of the side wall of the edge portion of the first insulating layer is 50° to 65°, and the slope angle of the side wall of the edge portion of the first inorganic layer is 65° to 80°.

5. The display panel according to claim 2, characterized in that: The edge portions of the first insulating layer and the first inorganic layer are provided with a second overlapping hole penetrating through the first insulating layer and the first inorganic layer; The second metal layer includes a transition portion, the display substrate includes a transition line, the transition portion extends into the second overlapping hole and is connected to the transition line, the edge portion of the first insulating layer has a slope angle of 50° to 65° on the side wall of the second overlapping hole, and the edge portion of the first inorganic layer has a slope angle of 65° to 80° on the side wall of the second overlapping hole.

6. The display panel according to any one of claims 1 to 5, characterized in that: The device comprises a display area and a peripheral area surrounding the display area, wherein the peripheral area comprises a wiring area and a pad area, and the pad area is located on one side of the display area; the wiring area surrounds part of the display area and is connected to the pad area; the first inorganic layer covers the display area and extends to the peripheral area; Along the display area pointing to the pad area, the pad area includes a transfer area, a bending area and a circuit board binding area in sequence, the transfer area is provided with a second overlap hole, and the circuit board binding area is provided with a binding pad; the first insulating layer and the first inorganic layer expose the first area and cover the second area; the first area includes the area of ​​the second overlap hole, the area of ​​the binding pad and the bending area; the second area is the area of ​​the pad area excluding the first area.

7. The display panel according to claim 6, characterized in that: The encapsulation layer further comprises: a second inorganic layer, located on a side of the first inorganic layer away from the display substrate; a boundary of an orthographic projection of the second inorganic layer on the display substrate is located between the display area and a boundary of an orthographic projection of the first inorganic layer on the display substrate; an edge portion of the first insulating layer is also in contact with a side wall of the second inorganic layer; The first organic layer is located between the first inorganic layer and the second inorganic layer; and the boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the second inorganic layer on the display substrate.

8. The display panel according to claim 7, characterized in that: The display substrate comprises: substrate; An anti-crack structure is arranged on a side of the substrate close to the encapsulation layer and located in the routing area; the anti-crack structure surrounds a portion of the display area and ends at the pad area; and the orthographic projection of the anti-crack structure on the substrate is located outside the orthographic projection of the first inorganic layer on the substrate; Among them, the minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is a first distance, and the minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is a second distance; the first distance is greater than the second distance.

9. The display panel according to claim 8, characterized in that: The distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is 20 μm to 50 μm; And / or, a distance between an orthographic projection of the crack prevention structure on the substrate and an orthographic projection of the second inorganic layer on the substrate is 50 μm to 100 μm.

10. The display panel according to claim 7, characterized in that: The display substrate further comprises: substrate; A blocking dam is arranged on a side of the substrate close to the encapsulation layer and located in the routing area; the blocking dam surrounds the display area; and the orthographic projection of the blocking dam on the substrate is located between two boundaries of the orthographic projections of the first organic layer and the second inorganic layer on the substrate.

11. The display panel according to claim 6, characterized in that: In the wiring area, a distance between a boundary of an orthographic projection of the first inorganic layer on the display substrate and a boundary of an orthographic projection of the second inorganic layer on the display substrate is 0 μm to 30 μm.

12. The display panel according to claim 1, characterized in that: The touch stack comprises: a second insulating layer in contact with the encapsulation layer; an edge portion of the second insulating layer in contact with an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the second insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of the edge portion of the first inorganic layer on the display substrate; A first metal layer is disposed on a side of the second insulating layer away from the encapsulation layer; a first insulating layer, arranged on a side of the first metal layer away from the encapsulation layer; an orthographic projection of a lower boundary of an edge portion of the first insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the second insulating layer on the display substrate; The second metal layer is arranged on a side of the first insulating layer away from the packaging layer.

13. The display panel according to any one of claims 1 to 5 and 12, characterized in that: The materials of the first inorganic layer and the insulating layer include silicide, and the material of one of the first inorganic layer and the insulating layer includes silicon oxide, and the material of the other does not include silicon oxide.

14. A display module, characterized in that: include: The display panel according to any one of claims 1 to 13; A circuit board is connected to the display panel.

15. A display device, characterized in that: include: case; The display module as claimed in claim 14, wherein the display module is disposed in the housing.

16. A method for preparing a display panel, characterized in that: include: preparing a display substrate; The display substrate has a display area and a peripheral area surrounding the display area, the peripheral area includes a pad area and a wiring area, the pad area is located on one side of the display area; the wiring area surrounds part of the display area and is connected to the pad area; the display substrate includes a substrate and an anti-crack structure and a blocking dam arranged on the substrate; the anti-crack structure surrounds part of the display area and ends at the pad area; The barrier dam surrounds the display area and is located between the anti-crack structure and the display area; A first inorganic thin film is formed on the light-emitting side of the display substrate; the first inorganic thin film is in contact with the display substrate, and a boundary of the first inorganic thin film is substantially flush with a boundary of the substrate; forming a first metal layer on a side of the first inorganic thin film away from the display substrate; forming a first insulating film on a side of the first metal layer away from the display substrate; a boundary of the first insulating film is substantially flush with a boundary of the substrate; The first insulating film and the first inorganic film are simultaneously etched to form a first insulating layer and a first inorganic layer; the boundary of the range of the orthographic projection of the first inorganic layer and the first insulating layer on the substrate is located between two opposite boundaries of the orthographic projection of the crack prevention structure and the blocking dam on the substrate; A second metal layer is formed on a side of the first insulating layer away from the display substrate.

17. The method for manufacturing a display panel according to claim 16, characterized in that: The synchronous etching adopts a dry etching process.

18. The method for preparing a display panel according to claim 17, characterized in that: In a process of synchronously etching the first insulating film and the first inorganic film to form a first inorganic layer and a first insulating layer, an etching selectivity ratio of the first insulating film to the first inorganic film is greater than 1.

19. The method for preparing a display panel according to any one of claims 16 to 18, characterized in that: Before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method further comprises: A second insulating film is formed on a side of the first inorganic film away from the display substrate; a boundary of the second insulating film is substantially flush with a boundary of the substrate; In the process of synchronously etching the first insulating film and the first inorganic film to form the first inorganic layer and the first insulating layer, the second insulating film is also synchronously etched to form the second insulating layer.

20. The method for preparing a display panel according to any one of claims 16 to 18, characterized in that: Before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method further comprises: forming a first organic layer on a side of the first inorganic thin film away from the display substrate; a boundary of an orthographic projection of the first organic layer on the display substrate is located between the display area and an inner boundary of an orthographic projection of the blocking dam on the display substrate; A second inorganic layer is formed on a side of the first organic layer away from the display substrate; a boundary of an orthographic projection of the second inorganic layer on the display substrate is located between two opposite boundaries of the blocking dam and the orthographic projection of the first inorganic layer on the substrate.

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