Light-emitting display device with integrated touch screen

Abstract

A light-emitting display device having an integrated touch screen according to an exemplary embodiment of the present invention comprises: a substrate including a display area provided with a plurality of pixels and a non-display area surrounding the display area; a light emitting diode in the display area; the packaging unit covers the display area and the non-display area; a touch electrode line on the package unit; a touch wiring disposed in the non-display area and connected to the touch electrode line; a plurality of blocking structures disposed in the non-display area and configured to surround the display area; and a step compensation layer disposed between the package unit and the touch wiring, in which the step compensation layer minimizes a step caused by the plurality of blocking structures to reduce irregularity of a surface of the package unit.

Description

[0001] This invention application is a divisional application of the invention patent application with application number 202110748299.9, application date June 30, 2021, and name “Luminous display device with integrated touch screen”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the priority of Korean Patent Application No. 10-2020-0080468 filed in the Korean Intellectual Property Office on June 30, 2020, the disclosure of which is incorporated herein by reference. Technical Field

[0004] The invention relates to a light-emitting display device with an integrated touch screen. Background Art

[0005] As the information society develops, the demand for display devices that display images has gradually increased, and various display devices such as liquid crystal display devices or organic light emitting display devices have been used.

[0006] In order to provide users with more various functions, the display device recognizes the user's touch on the display panel and performs input processing based on the recognized touch. For example, a plurality of touch electrodes are set in the active area of ​​the display panel. The display device senses the touch by sensing the change in capacitance of the touch electrode caused by the user's touch. Specifically, when the display device is applied to an organic light-emitting display device, the various elements constituting the touch element may be formed above or below the packaging film for protecting the light-emitting unit of the organic light-emitting display device. That is, in order to sense the user's touch on the display panel, a plurality of touch electrodes are set in the display panel and touch connection lines connecting the touch electrodes and the driving circuit are set.

[0007] The active area of ​​the display panel where the touch electrode is provided may have various shapes, and in some cases, an area where a module such as a camera sensor or a proximity sensor is provided may be located in the active area. In addition, an area where the sensor is provided may be provided in the active area in the form of a hole.

[0008] However, there is a problem that it is difficult to set the touch electrodes on the display panel depending on the type or structural characteristics of the touch display device. There is also another problem that a failure of a touch connection line short circuit or disconnection may occur due to the basic structure of the display panel. Summary of the invention

[0009] When touch electrodes and touch lines are formed on a packaging unit of a panel constituting a display device, rather than manufacturing a touch panel separately to be attached to a display panel, the touch lines are disconnected due to a step caused by a blocking structure in a non-display area, which causes a malfunction of a touch operation.

[0010] Therefore, an object of the present invention is to provide a light emitting display device with an integrated touch screen which alleviates a high step caused by a blocking structure.

[0011] The objects of the present invention are not limited to the above objects, and those skilled in the art can clearly understand other objects not mentioned above from the following description.

[0012] To achieve the above object, according to one aspect of the present invention, a light-emitting display device with an integrated touch screen includes: a substrate, the substrate including a display area provided with a plurality of pixels and a non-display area surrounding the display area. It may include: an opening area located inside the display area and penetrating the substrate and a functional layer located above the substrate; and a border area arranged to contact the outside of the opening area. A pixel area in the display area except the opening area and the border area. It may include an encapsulation unit covering the pixel area, the non-display area and the border area. It may include a plurality of first touch electrodes arranged on the encapsulation unit of the pixel area and extending in a first direction and a plurality of second touch electrodes extending in a second direction. It has a first blocking structure and a second blocking structure arranged in the non-display area and configured to surround the display area. It may include a first touch wiring arranged on the first blocking structure and the second blocking structure and connected to the first touch electrode. It may include a second touch wiring arranged on the first blocking structure and the second blocking structure and connected to the second touch electrode. It may include: an organic cover layer covering the first touch wiring and the second touch wiring; and a touch buffer layer covering the encapsulation unit. A step compensation layer may be included between the touch buffer layer and the first and second touch wirings, and the step compensation layer may be disposed to overlap the first and second barrier structures.

[0013] In addition, according to another aspect of the present invention, a light-emitting display device with an integrated touch screen includes a substrate, the substrate including a display area provided with a plurality of pixels and a non-display area surrounding the display area. A light-emitting diode may be provided in the display area. An encapsulation unit covering the display area and the non-display area is provided, and a touch electrode line may be provided on the encapsulation unit. A touch wiring connected to the touch electrode line may be formed in the non-display area. An organic covering layer may be included, the organic covering layer being formed above the touch electrode line and the touch wiring and covering the touch electrode line and the touch wiring. The following may be included: a plurality of blocking structures provided in the non-display area and configured to surround the display area; and a step compensation layer between the encapsulation unit and the touch wiring. The step compensation layer minimizes the steps caused by the plurality of blocking structures, thereby reducing the irregularity of the surface of the encapsulation unit.

[0014] Additional details of example implementations are included in the detailed description and the accompanying drawings.

[0015] According to an exemplary embodiment of the present invention, a step compensation layer for alleviating a high step caused by the blocking structure is disposed over the blocking structure overlapping the touch wiring of the display panel, thereby suppressing disconnection of the touch wiring passing through the blocking structure.

[0016] The effects according to the present invention are not limited to the above-exemplified contents, and more various effects are included in the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 is a diagram illustrating a schematic configuration of a light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention;

[0019] Figure 2 is a diagram schematically illustrating a display panel of a light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention;

[0020] Figure 3 is an exemplary diagram illustrating a structure in which a touch panel is built in a display panel according to an exemplary embodiment of the present invention;

[0021] Figure 4 and Figure 5 is an exemplary diagram illustrating types of touch electrodes provided in a display panel according to an exemplary embodiment of the present invention;

[0022] Figure 6 It is a graphic Figure 5An example diagram of a mesh touch electrode;

[0023] Figure 7 is a diagram simply illustrating a touch sensor structure in a display panel according to an exemplary embodiment of the present invention;

[0024] Figure 8 yes Figure 7 A diagram of an implementation example of a touch sensor structure;

[0025] Fig. 9 is a partial cross-sectional view of a display panel according to an exemplary embodiment of the present invention, which is taken along Figure 8 An example of a cross-sectional structure taken along line XX';

[0026] Fig.10 and Fig.11 is an exemplary diagram illustrating a cross-sectional structure including a color filter in a display panel according to an exemplary embodiment of the present invention;

[0027] Fig.12 is a diagram illustrating an example of a structure in which holes are provided in an active area of ​​a display panel according to an exemplary embodiment of the present invention;

[0028] Fig.13 It is a diagram along Fig.12 An illustration of an example of a cross-sectional structure taken along line YY';

[0029] Fig.14 is a diagram illustrating another exemplary embodiment of the present invention. Figure 8 A diagram of a cross section taken along line XX';

[0030] Fig.15 is a plan view illustrating a light emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention;

[0031] Fig.16 It is a diagram along Fig.15 A diagram of a cross-sectional structure taken along line Z-Z';

[0032] Fig.17 is a diagram illustrating another exemplary embodiment of the present invention. Fig.15 Schematic diagram of an example of a cross-sectional structure taken along line ZZ'. DETAILED DESCRIPTION

[0033] The advantages and features of the present invention and the methods for achieving these advantages and features are described in detail below and in the accompanying drawings. Figure 1The exemplary embodiments described in detail will become clear. However, the present invention is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present invention and the scope of the present invention. Therefore, the present invention is limited only by the scope of the appended claims.

[0034] The shapes, sizes, proportions, angles, quantities, etc. shown in the accompanying drawings for describing exemplary embodiments of the present invention are merely examples, and the present invention is not limited thereto. Similar reference numerals generally represent similar elements throughout the application. In addition, in the following description of the present invention, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the present invention. Terms such as "including", "having" and "comprising" used herein are generally intended to allow the addition of other components unless these terms are used together with the term "only".

[0035] Even if not explicitly stated, components are interpreted as including the usual margin of error.

[0036] When terms such as "on", "over", "below", and "after" are used to describe the positional relationship between two parts, one or more parts may be set between the two parts unless these terms are used together with the terms "immediately" or "directly".

[0037] When an element or layer is referred to as being “on” another element or layer, the element or layer may be directly disposed on the other element or layer or other elements or layers may be interposed therebetween.

[0038] Although the terms "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, within the technical concept of the present invention, the first component mentioned below may be the second component.

[0039] Like reference numbers generally refer to like elements throughout the application.

[0040] The size and thickness of each component shown in the drawings are shown only for convenience of description, and the present invention is not limited to the sizes and thicknesses of the components shown in the drawings.

[0041] The features of the various embodiments of the present invention may be combined or coupled with each other in part or in whole, and the features of the various embodiments may be technically interlocked and operated in various ways, and the various embodiments may be implemented independently of each other, or in association with each other.

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0043] Figure 1 is a diagram of a system configuration of a light emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention.

[0044] Reference Figure 1 , the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention may provide both an image display function and a touch sensing function.

[0045] In order to provide an image display function, a light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention may include: a display panel DISP, a data driving circuit DDC, a gate driving circuit GDC and a display controller DCTR. In the display panel DISP, a plurality of data lines and a plurality of gate lines are provided, and a plurality of pixels or sub-pixels defined by the plurality of data lines and the plurality of gate lines are provided. The data driving circuit DDC drives the plurality of data lines, and the gate driver circuit GDC drives the plurality of gate lines. The display controller DCTR controls the operation of the data driving circuit DDC and the gate driving circuit GDC.

[0046] Each of the data drive circuit DDC, the gate drive circuit GDC, and the display controller DCTR may be implemented as one or more separate components. In some cases, two or more of the data drive circuit DDC, the gate drive circuit GDC, and the display controller DCTR may be implemented as a combined component. For example, the data drive circuit DDC and the display controller DCTR may be implemented as one integrated circuit (IC) chip.

[0047] In order to provide a touch sensing function, the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention may include a touch panel TSP and a touch sensing circuit TSC. The touch panel TSP includes a plurality of touch electrodes. The touch sensing circuit TSC provides a touch driving signal to the touch panel TSP and detects a touch sensing signal from the touch panel TSP, thereby sensing whether there is a user's touch or a touch position (touch coordinates) in the touch panel TSP based on the detected touch sensing signal.

[0048] For example, the touch sensing circuit TSC may include a touch driving circuit TDC and a touch controller TCTR. The touch driving circuit TDC provides a touch driving signal to the touch panel TSP and detects a touch sensing signal from the touch panel TSP. The touch controller TCTR senses whether there is a user's touch and / or a touch position in the touch panel TSP based on the touch sensing signal detected by the touch driving circuit TDC.

[0049] The touch driving circuit TDC may include a first circuit part that provides a touch driving signal to the touch panel TSP and a second circuit part that detects a touch sensing signal from the touch panel TSP.

[0050] The touch driving circuit TDC and the touch controller TCTR may be implemented by separate components, or may be implemented as combined into one component in some cases.

[0051] Meanwhile, each of the data driving circuit DDC, the gate driving circuit GDC, and the touch driving circuit TDC may be implemented by one or more integrated circuits. In terms of electrical connection with the display panel DISP, these circuits may be implemented by a chip on glass (COG) structure, a chip on film (COF) structure, or a tape carrier package (TCP) type. In addition, the gate driving circuit GDC may also be implemented by a gate in panel (GIP) type.

[0052] Meanwhile, each of the circuit configurations DDC, GDC, and DCTR for display driving and the circuit configurations TDC and TCTR for touch sensing may be implemented by one or more separate components. In some cases, one or more of the circuit configurations DDC, GDC, and DCTR for display driving and one or more of the circuit configurations TDC and TCTR for touch sensing are functionally combined and implemented by one or more components.

[0053] For example, the data driving circuit DDC and the touch driving circuit TDC may be implemented as a combination in one or two or more integrated circuit chips. When the data driving circuit DDC and the touch driving circuit TDC are implemented as a combination in two or more integrated circuit chips, each of the two or more integrated circuit chips may have a data driving function and a touch driving function.

[0054] Meanwhile, the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention may be various types of devices, such as an organic light-emitting display device and a liquid crystal display device. In the following description, for the convenience of description, the light-emitting display device with an integrated touch screen will be described as an organic light-emitting display device as an example. That is, although the display panel DISP may be various types such as an organic light-emitting display panel and a liquid crystal display panel, in the following description, for the convenience of description, the display panel will be described as an organic light-emitting display panel as an example.

[0055] In addition, as described below, the touch panel TSP may include: a plurality of touch electrodes to which touch driving signals are applied or from which touch sensing signals are detected; a plurality of touch wirings connecting the plurality of touch electrodes to a touch driving circuit TDC, and the like.

[0056] The touch panel TSP may be disposed outside the display panel DISP. That is, the touch panel TSP and the display panel DISP may be separately manufactured and combined. Such a touch panel TSP is called an external type or an external type.

[0057] In contrast, the touch panel TSP can be built into the display panel DISP. That is, when the display panel DISP is manufactured, a touch sensor structure can be formed together with electrodes and signal lines for display driving, such as a plurality of touch electrodes and a plurality of touch wirings constituting the touch panel TSP. Such a touch panel TSP is called an embedded type. In the following description, for the convenience of description, the touch panel TSP will be described as an embedded type as an example.

[0058] Figure 2 is a diagram schematically illustrating a display panel DISP of a light emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention.

[0059] Reference Figure 2 The display panel DISP may include an active area AA displaying an image, and a non-active area NA which is an outer area of ​​an outer boundary line BL of the active area AA.

[0060] In the active area AA of the display panel DISP, a plurality of sub-pixels for displaying an image are disposed, and various electrodes or signal lines for driving a display are disposed.

[0061] In addition, a plurality of touch electrodes for touch sensing, a plurality of touch wirings electrically connected to the plurality of touch electrodes, etc. may be disposed in the active area AA of the display panel DISP. Therefore, the active area AA may also be referred to as a touch sensing area capable of sensing touch.

[0062] In the non-active area NA of the display panel DISP, link lines extending from various signal lines provided in the active area AA or link lines electrically connected to various signal lines provided in the active area AA, and pads electrically connected to these link lines may be provided. The pads provided in the non-active area NA may be bonded to or electrically connected to the display driving circuits DDC, GDC, etc.

[0063] In addition, in the non-active area NA of the display panel DISP, wires extending from the plurality of touch wires provided in the active area AA or wires electrically connected to the plurality of touch wires provided in the active area AA, and pads electrically connected to the wires may be provided. The pads provided in the non-active area NA may be bonded to or electrically connected to the touch drive circuit TDC.

[0064] In the non-active area NA, a portion of the outermost touch electrodes among the plurality of touch electrodes disposed in the active area AA may be expanded or may be further provided with one or more electrodes (touch electrodes) formed of the same material as the plurality of touch electrodes disposed in the active area AA.

[0065] That is, all of the plurality of touch electrodes provided in the display panel DISP may be provided in the active area AA, or some of the plurality of touch electrodes provided in the display panel DISP (e.g., the outermost touch electrodes) may be provided in the non-active area NA. Some of the plurality of touch electrodes provided in the display panel DISP (e.g., the outermost touch electrodes) may be provided in both the active area AA and the non-active area NA.

[0066] At the same time, refer to Figure 2 The display panel DISP of the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention may include a dam area DA in which a dam DAM is provided (see FIG. 1 ). Fig. 9 ), the dam portion DAM is used to suppress the collapse of any layer in the active area AA (for example, the encapsulation unit ENCAP in the organic light-emitting display panel). That is, the dam portion DAM can be used to suppress the organic layer included in the encapsulation unit ENCAP from overflowing outward. Therefore, the dam portion DAM can be called a blocking structure.

[0067] The dam area DA may be located at a boundary between the active area AA and the non-active area NA, or may be located at an arbitrary position of the non-active area NA which is an outer area of ​​the active area AA, or the like.

[0068] The dam provided in the dam area DA may be provided to surround all directions of the active area, or may be provided only outside one or two or more portions (portions having a layer that is easily collapsed) of the active area AA.

[0069] The dams provided in the dam area DA may have one pattern in which all the dams are connected or may have two or more separate patterns. In addition, in the dam area DA, only one basic dam (which may be referred to as a primary dam) may be provided, or two or more dams (a first dam and a second dam) may be provided, or three or more dams may be provided.

[0070] In the weir area DA, only the first weir is provided in any one direction, and both the first weir and the second weir may be provided in the other directions.

[0071] Figure 3 is an exemplary diagram illustrating a structure in which a touch panel TSP is built in a display panel DISP according to an exemplary embodiment of the present invention.

[0072] Reference Figure 3 , in the active area AA of the display panel DISP, a plurality of sub-pixels SP are disposed on the substrate SUB.

[0073] Each sub-pixel SP may include a light emitting diode ED, a first transistor T1 driving the light emitting diode ED, a second transistor T2 transmitting a data voltage VDATA to a first node N1 of the first transistor T1, and a storage capacitor Cst maintaining a constant voltage for one frame.

[0074] The first transistor T1 may include: a first node N1 to which a data voltage VDATA is applied, a second node N2 electrically connected to the light emitting diode ED, and a third node N3, wherein a driving voltage VDD is applied from a driving voltage line DVL to the third node N3. The first node N1 is a gate node, the second node N2 is a source node or a drain node, and the third node N3 is a drain node or a source node. The first transistor T1 may also be referred to as a driving transistor for driving the light emitting diode ED.

[0075] The light emitting diode ED may include a first electrode (eg, an anode electrode), a light emitting layer, and a second electrode (eg, a cathode electrode). The first electrode is electrically connected to the second node N2 of the first transistor T1, and the second electrode may be applied with a base voltage VSS.

[0076] The light emitting layer in such a light emitting diode ED may be an organic light emitting layer including an organic material. In this case, the light emitting diode ED may be an organic light emitting diode OLED.

[0077] The second transistor T2 can be turned on or off by a scan signal SCAN applied through the gate line GL and is electrically connected between the first node N1 of the first transistor T1 and the data line DL. Such a second transistor T2 is also called a switching transistor.

[0078] When the second transistor T2 is turned on by the scan signal SCAN, the second transistor T2 transmits the data voltage VDATA provided from the data line to the first node N1 of the first transistor T1.

[0079] The storage capacitor Cst may be electrically connected between the first node N1 and the second node N2 of the first transistor T1.

[0080] like Figure 3 As shown in , each sub-pixel SP may have a 2T1C structure including two transistors T1 and T2 and one capacitor Cst, and in some cases, each sub-pixel SP may further include one or more transistors or further include one or more capacitors.

[0081] The storage capacitor Cst may be an external capacitor intentionally designed outside the first transistor T1 , rather than a parasitic capacitor (eg, Cgs or Cgd), that is, an internal capacitor formed between the first node N1 and the second node N2 of the first transistor T1 .

[0082] Each of the first transistor T1 and the second transistor T2 may be an n-type transistor or a p-type transistor.

[0083] Meanwhile, as described above, circuit elements such as a light emitting diode ED, two or more transistors T1 and T2, and one or more capacitors Cst are provided in the display panel DISP. These circuit elements (particularly, the light emitting diode ED) are susceptible to moisture or oxygen from the outside. Therefore, an encapsulation unit ENCAP may be provided in the display panel DISP to inhibit moisture or oxygen from penetrating into these circuit elements (particularly, the light emitting diode ED) from the outside.

[0084] The encapsulation unit ENCAP may be formed of one layer or a plurality of layers.

[0085] Meanwhile, in the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention, the touch panel TSP may be formed on the encapsulation unit ENCAP.

[0086] That is, in the light emitting display device with an integrated touch screen, a touch sensor structure such as a plurality of touch electrodes TE forming the touch panel TSP may be disposed on the encapsulation unit ENCAP.

[0087] During touch sensing, a touch drive signal may be applied to the touch electrode TE, or a touch sensing signal may be detected from the touch electrode TE. Therefore, during touch sensing, a potential difference is formed between the touch electrode TE and the cathode electrode (between which the encapsulation unit ENCAP is disposed), so that an unnecessary parasitic capacitance may be formed. Such parasitic capacitance may reduce touch sensitivity. Therefore, in order to reduce the parasitic capacitance, the distance between the touch electrode TE and the cathode electrode may be designed to be a predetermined value (e.g., 1 μm) or more in consideration of the panel thickness, the panel manufacturing process, and the display performance. To this end, for example, the thickness of the encapsulation unit ENCAP may be designed to be at least 1 μm or more.

[0088] Figure 4 and Figure 5 is an exemplary diagram illustrating types of touch electrodes TE provided in a display panel DISP according to an exemplary embodiment of the present invention.

[0089] like Figure 4 As shown in , each touch electrode TE provided in the display panel DISP may be a plate-shaped electrode metal without a hole. In this case, each touch electrode TE may be a transparent electrode. That is, each touch electrode TE may be formed of a transparent electrode material so that light emitted from a plurality of sub-pixels SP provided under the touch electrode TE is transmitted upward.

[0090] In contrast, Figure 5As shown in , each of the touch electrodes TE provided in the display panel DISP may be an electrode metal EM patterned in a mesh type so as to have two or more holes.

[0091] The electrode metal EM is a portion corresponding to a substantial touch electrode TE, and thus a touch driving signal is applied thereto or a touch sensing signal is sensed therefrom.

[0092] like Figure 5 As shown in , when each touch electrode TE is the electrode metal EM patterned in a mesh type, two or more holes may exist in the area of ​​the touch electrode TE.

[0093] Each of the two or more holes in each touch electrode TE may correspond to a light emitting region of one or more sub-pixels SP. That is, the plurality of holes serve as a passage for light emitted from a plurality of sub-pixels SP disposed below to pass upward. In the following description, for convenience of description, it will be described as an example that each touch electrode TE is a mesh type electrode metal EM.

[0094] The electrode metal EM corresponding to each touch electrode TE may be located on a bank provided in a region other than the light emitting region of the two or more sub-pixels SP.

[0095] Meanwhile, in order to form the plurality of touch electrodes TE, the electrode metal ME is widely formed in a mesh type, and then the electrode metal EM is cut to have a predetermined pattern to electrically separate the electrode metal EM. Thus, the plurality of touch electrodes TE may be generated.

[0096] The outline shape of the touch electrode TE may be a square shape such as a diamond shape or a rhombus shape. Figure 4 and Figure 5 As shown in , or may be various shapes such as a triangle, a pentagon, or a hexagon.

[0097] Figure 6 It is a graphic Figure 5 An example diagram of a mesh touch electrode TE.

[0098] Reference Figure 6 In the region of each touch electrode TE, a mesh type electrode metal EM and one or more dummy metals DM disconnected from the mesh type electrode metal EM may be provided.

[0099] The electrode metal EM corresponds to the substantial touch electrode TE, and thus a touch drive signal is applied thereto or a touch sensing signal is sensed therefrom. However, although a dummy metal DM is provided in the region of the touch electrode TE, no touch drive signal is applied thereto, and no touch sensing signal is sensed therefrom. That is, the dummy metal DM may be an electrically floating metal.

[0100] Therefore, the electrode metal EM may be electrically connected to the touch driving circuit TDC, but the dummy metal DM is not electrically connected to the touch driving circuit TDC.

[0101] One or more dummy metals DM disconnected from the electrode metal EM may be provided in the region of each touch electrode TE.

[0102] In contrast, one or more dummy metals DM disconnected from the electrode metal EM may be provided only in the region of each of some touch electrodes TE among all the touch electrodes TE. That is, the dummy metal DM may not be provided in the region of some touch electrodes TE.

[0103] At the same time, regarding the role of virtual metal DM, such as Figure 5 As shown in , when one or more dummy metals DM are not provided in the region of the touch electrode TE but only a mesh-type electrode metal EM is provided, a visibility problem in which the outline of the electrode metal EM is seen on the screen may occur.

[0104] In contrast, Figure 6 As shown in , when one or more dummy metals DM are provided in the region of the touch electrode TE, a visibility problem of seeing the outline of the electrode metal EM on the screen can be suppressed.

[0105] In addition, whether the dummy metal DM exists or the amount of the dummy metal DM (ratio of the dummy metal) is adjusted for each touch electrode TE, so that the size of the capacitance is adjusted for each touch electrode TE to improve the touch sensitivity.

[0106] Meanwhile, some branches of the electrode metal EM formed in the region of one touch electrode TE are cut so that the cut electrode metal EM may be formed as the dummy metal DM. That is, the electrode metal EM and the dummy metal DM may be the same material formed on the same layer.

[0107] Meanwhile, the light emitting display device with an integrated touch screen according to the exemplary embodiment of the present invention may sense a touch based on capacitance formed in the touch electrode TE.

[0108] The light emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention adopts a capacitance-based touch sensing method, thereby sensing a touch through a mutual capacitance-based touch sensing method or a self-capacitance-based touch sensing method.

[0109] According to the touch sensing method based on mutual capacitance, the multiple touch electrodes TE can be divided into driving touch electrodes (transmitting touch electrodes) to which touch driving signals are applied, and sensing touch electrodes (receiving touch electrodes) that detect touch sensing signals and form capacitance with the driving touch electrodes.

[0110] In the case of a mutual capacitance-based touch sensing method, the touch sensing circuit TSC senses whether there is a touch and / or touch coordinates based on the change in capacitance (mutual capacitance) between the driving touch electrode and the sensing touch electrode according to whether there is a pointer such as a finger or a pen.

[0111] According to the touch sensing method based on self-capacitance, each touch electrode TE can be used as both a driving touch electrode and a sensing touch electrode. That is, the touch sensing circuit TSC applies a touch drive signal to one or more touch electrodes TE and detects a touch sensing signal through the touch electrode TE to which the touch drive signal is applied. The touch sensing circuit TSC identifies the change in capacitance between an indicator such as a finger or a pen and the touch electrode TE based on the detected touch sensing signal to sense whether there is a touch and / or touch coordinates. In the touch sensing method based on self-capacitance, there is no distinction between a driving touch electrode and a sensing touch electrode.

[0112] As described above, the light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention can sense touch by a touch sensing method based on mutual capacitance or a touch sensing method based on self capacitance. However, in the following description, for the convenience of description, the light-emitting display device with an integrated touch screen will be described as an example in which the touch sensing based on mutual capacitance is performed and a touch sensor structure for such touch sensing is included.

[0113] Figure 7 is a diagram simply illustrating a touch sensor structure in a display panel DISP according to an exemplary embodiment of the present invention, Figure 8 yes Figure 7 Schematic diagram of an implementation example of a touch sensor structure.

[0114] Reference Figure 7 , a touch sensor structure for touch sensing based on mutual capacitance may include a plurality of X touch electrode lines X-TEL and a plurality of Y touch electrode lines Y-TEL. Here, the plurality of X touch electrode lines X-TEL and the plurality of Y touch electrode lines Y-TEL are located on the encapsulation unit ENCAP. The X touch electrode lines are referred to as first touch electrode lines, and the Y touch electrode lines are referred to as second touch electrode lines.

[0115] Each of the plurality of X touch electrode lines X-TEL may be disposed along a first direction, and each of the plurality of Y touch electrode lines Y-TEL may be disposed along a second direction different from the first direction.

[0116] In the present invention, the first direction and the second direction are relatively different directions, for example, the first direction may be the x-axis direction, and the second direction may be the y-axis direction. Conversely, the first direction may be the y-axis direction, and the second direction may be the x-axis direction. In addition, the first direction and the second direction may be perpendicular to each other, but may not be perpendicular. In addition, in the present invention, the row and the column are relative, so that the row and the column can be switched according to the viewing angle.

[0117] Each of the plurality of X touch electrode lines X-TEL may be composed of a plurality of electrically connected X touch electrodes X-TE. Each of the plurality of Y touch electrode lines Y-TEL may be composed of a plurality of electrically connected Y touch electrodes Y-TE. The X touch electrodes may be referred to as first touch electrodes, and the Y touch electrodes may be referred to as second touch electrodes.

[0118] Here, the plurality of X touch electrodes X-TE and the plurality of Y touch electrodes Y-TE are included in the plurality of touch electrodes TE and have different roles (functions).

[0119] For example, the plurality of X touch electrodes X-TE constituting each of the plurality of X touch electrode lines X-TEL may be driving touch electrodes, and the plurality of Y touch electrodes Y-TE constituting each of the plurality of Y touch electrode lines Y-TEL may be sensing touch electrodes. In this case, each of the plurality of X touch electrode lines X-TEL corresponds to a driving touch electrode line, and each of the plurality of Y touch electrode lines Y-TEL corresponds to a sensing touch electrode line.

[0120] In contrast, the plurality of X touch electrodes X-TE constituting each of the plurality of X touch electrode lines X-TEL may be sensing touch electrodes, and the plurality of Y touch electrodes Y-TE constituting each of the plurality of Y touch electrode lines Y-TEL may be driving touch electrodes. In this case, each of the plurality of X touch electrode lines X-TEL corresponds to a sensing touch electrode line, and each of the plurality of Y touch electrode lines Y-TEL corresponds to a driving touch electrode line.

[0121] The touch sensor metal for touch sensing may further include a plurality of touch wiring lines TL in addition to the plurality of X touch electrode lines X-TEL and the plurality of Y touch electrode lines Y-TEL.

[0122] The plurality of touch wirings TL may include one or more X touch wirings X-TL connected to each of the plurality of X touch electrode lines X-TEL and one or more Y touch wirings Y-TL connected to each of the plurality of Y touch electrode lines Y-TEL.

[0123] Reference Figure 8 Each of the plurality of X touch electrode lines X-TEL may include a plurality of X touch electrodes X-TE arranged in the same row (or column), and one or more X touch electrode connection lines X-CL electrically connecting the plurality of X touch electrodes. Here, the X touch electrode connection line X-CL connecting two adjacent X touch electrodes X-TE may be a metal (see Figure 8 ), or may be a metal connected to the two adjacent X touch electrodes X-TE via a contact hole.

[0124] Each of the plurality of Y touch electrode lines Y-TEL may include a plurality of Y touch electrodes Y-TE arranged in the same column (or row), and one or more Y touch electrode connection lines Y-CL electrically connecting the plurality of Y touch electrodes Y-TE. Here, the Y touch electrode connection line Y-CL connecting two adjacent Y touch electrodes Y-TE may be a metal formed integrally with the two adjacent Y touch electrodes Y-TE, or may be a metal connected to the two adjacent Y touch electrodes Y-TE via a contact hole (see Figure 8 ).

[0125] In the crossing region (touch electrode line crossing region) of the X touch electrode line X-TEL and the Y touch electrode line Y-TEL, the X touch electrode connection line X-CL may cross the Y touch electrode connection line Y-CL.

[0126] In this case, the X touch electrode connection line X-CL may cross the Y touch electrode connection line Y-CL in a crossing region (touch electrode line crossing region) of the X touch electrode line X-TEL and the Y touch electrode line Y-TEL.

[0127] As described above, when the X touch electrode connection line X-CL crosses the Y touch electrode connection line Y-CL in the touch electrode line crossing area, the X touch electrode connection line X-CL and the Y touch electrode connection line Y-CL need to be located on different layers.

[0128] Therefore, in order to cross-dispose the plurality of X touch electrode lines X-TEL and the plurality of Y touch electrode lines Y-TEL, the plurality of X touch electrodes X-TE, the plurality of X touch electrode connection lines X-CL, the plurality of Y touch electrodes Y-TE, and the plurality of Y touch electrode connection lines Y-CL may be located on two or more layers. The X touch electrode connection lines are referred to as first touch electrode connection lines, and the Y touch electrode connection lines are referred to as second touch electrode connection lines.

[0129] Reference Figure 8, each of the plurality of X touch electrode lines X-TEL is electrically connected to the X touch pad X-TP through one or more X touch wirings X-TL. That is, the outermost X touch electrode X-TE among the plurality of X touch electrodes X-TE included in one X touch electrode line X-TEL is electrically connected to the corresponding X touch pad X-TP through the X touch wiring X-TL.

[0130] Each of the plurality of Y touch electrode lines Y-TEL is electrically connected to a Y touch pad Y-TP through one or more Y touch wirings Y-TL. That is, a Y touch electrode Y-TE disposed on the outermost side among a plurality of Y touch electrodes Y-TE included in one Y touch electrode line Y-TEL is electrically connected to a corresponding Y touch pad Y-TP through the Y touch wiring Y-TL.

[0131] At the same time, if Figure 8 As shown in , a plurality of X touch electrode lines X-TEL and a plurality of Y touch electrode lines Y-TEL may be disposed on the encapsulation unit ENCAP. That is, a plurality of X touch electrodes X-TE and a plurality of X touch electrode connection lines X-CL constituting the plurality of X touch electrode lines X-TEL may be disposed on the encapsulation unit ENCAP. A plurality of Y touch electrodes Y-TE and a plurality of Y touch electrode connection lines Y-CL constituting the plurality of Y touch electrode lines Y-TEL may be disposed on the encapsulation unit ENCAP.

[0132] At the same time, if Figure 8 As shown in , each of the plurality of X touch wirings X-TL electrically connected to the plurality of X touch electrode lines X-TEL may be arranged on the encapsulation unit ENCAP while extending to a portion where the encapsulation unit ENCAP is not arranged, thereby being electrically connected to the plurality of X touch pads X-TP. Each of the plurality of Y touch wirings Y-TL electrically connected to the plurality of Y touch electrode lines Y-TEL may be arranged on the encapsulation unit ENCAP while extending to a portion where the encapsulation unit ENCAP is not arranged, thereby being electrically connected to the plurality of Y touch pads Y-TP. Here, the encapsulation unit ENCAP may be located in the active area AA, and in some cases, the encapsulation unit ENCAP may extend to the non-active area NA.

[0133] Meanwhile, as described above, in order to suppress the collapse of any layer in the active area AA (e.g., the encapsulation unit ENCAP in the organic light-emitting display panel), a dam area DA may exist in a boundary area between the active area AA and the non-active area NA or in the non-active area NA as an outer area of ​​the active area AA. That is, the dam DAM may be used to suppress the organic layer included in the encapsulation unit ENCAP from overflowing outward. Therefore, the dam DAM may be referred to as a blocking structure.

[0134] like Figure 8As shown in FIG. 1 , for example, a first weir DAM1 and a second weir DAM2 may be provided in the weir area DA. Here, the second weir DAM2 may be provided at an outer side than the first weir DAM1.

[0135] and Figure 8 In contrast to the example in which only the first weir DAM1 is provided in the weir area DA, in some cases, not only the first weir DAM1 and the second weir DAM2 but also one or more additional weirs may be further provided in the weir area DA.

[0136] At the same time, refer to Figure 8 , the encapsulation unit ENCAP may be located on the side surface of the first dam portion DAM1 , or the encapsulation unit ENCAP may not only be located on the side surface of the first dam portion DAM1 , but also be provided above the first dam portion DAM1 .

[0137] Fig. 9 is along Figure 8 A partial cross-sectional view of a display panel DISP according to an exemplary embodiment of the present invention taken along line XX'. Fig. 9 In FIG. 1 , the touch electrode TE is shown as a plate shape, but this is only an example, and the touch electrode may be a mesh type. When the touch electrode TE is a mesh type, the hole of the touch electrode TE may be located on the light emitting area of ​​the sub-pixel SP.

[0138] A buffer layer BUF having a single layer or multilayer structure may be disposed on the substrate SUB. The substrate SUB may be formed of a flexible material. When the substrate SUB is formed of a material such as polyimide, the buffer layer BUF may be formed of a single layer composed of any one of an inorganic material and an organic material, so as to suppress damage to the light emitting diode caused by impurities such as alkaline ions leaking from the substrate SUB during subsequent processes. In contrast, the buffer layer BUF may be formed of multiple layers formed of different inorganic materials. In addition, the buffer layer BUF may also be formed of multiple layers formed of organic layers and inorganic layers. The inorganic material may include any one of a silicon oxide layer SiOx, a silicon nitride layer SiNx, and a silicon nitride oxide SiON. The organic material may include any one of polyimide, a benzocyclobutene series resin, and a polyacrylate. Examples of polyacrylates may include photo acryl. The first transistor T1 in each sub-pixel SP, i.e., the driving transistor, is disposed in an active area AA on the substrate SUB.

[0139] The first transistor T1 includes a first node electrode NE1 corresponding to a gate electrode, a second node electrode NE2 corresponding to a source electrode or a drain electrode, a third node electrode NE3 corresponding to a drain electrode or a source electrode, a semiconductor layer SEM1 , and the like.

[0140] The first node electrode NE1 and the semiconductor layer SEM1 may overlap with the gate insulating layer GI therebetween. The second node electrode NE2 is formed on the interlayer insulating layer ILD to contact one side of the semiconductor layer SEM1, and the third node electrode NE3 is formed on the interlayer insulating layer ILD to contact the other side of the semiconductor layer SEM1.

[0141] An insulating layer INS covering the second node electrode NE2, the third node electrode NE3 and the data line may be provided. The insulating layer INS may be formed of a single layer formed of an inorganic material or a multilayer formed of different inorganic materials. For example, the insulating layer INS may be formed of a single layer or a multilayer of any one of a silicon oxide layer SiOx, a silicon nitride layer SiNx and a silicon nitride oxide layer SiON.

[0142] The planarization layer PLN may be disposed on the insulating layer INS. The planarization layer PLN is formed to relieve the step of the lower structure and protect the lower structure, and the planarization layer PLN is formed of an organic material layer. The organic material may include any one of polyimide, benzocyclobutene series resin, and polyacrylate. Examples of polyacrylate may include optical acrylic.

[0143] The light emitting diode ED may include a first electrode E1 corresponding to an anode electrode (or a cathode electrode), a light emitting layer EL formed on the first electrode E1 , and a second electrode E2 corresponding to a cathode electrode (or an anode electrode) formed on the light emitting layer EL.

[0144] The first electrode E1 is electrically connected to the second node electrode NE2 of the first transistor T1 exposed through a pixel contact hole penetrating the planarization layer PLN.

[0145] A bank BANK having an opening exposing the first electrode E1 may be formed on the planarization layer PLN. The opening of the bank BANK may be a region defining a light emitting region. The bank BANK may be formed of an organic material such as polyimide, a benzocyclobutene series resin, or a polyacrylate. A spacer SPC may be formed on the bank BANK. The spacer SPC may be used to prevent a mask used in a subsequent process of manufacturing the light emitting layer EL from contacting the stacked material under the spacer SPC. The spacer SPC may be manufactured simultaneously with the bank BANK using a halftone mask during the process of manufacturing the bank BANK. Therefore, the spacer SPC may be formed of the same material as the bank BANK and may be formed integrally with the bank BANK.

[0146] The above-mentioned spacer SPC may be arranged anywhere above the embankment BANK. For example, the spacer SPC may be arranged on the entire upper portion of the embankment BANK, in which case the width of the spacer SPC may be smaller than the width of the embankment BANK. In addition, the spacer SPC may be arranged above the embankment BANK with a width greater than the width of the embankment BANK, in which case the spacer SPC may partially overlap the light-emitting area. In addition, the spacer SPC may be arranged above a portion of the embankment BANK. For example, the spacer SPC may be arranged on the entire embankment BANK surrounding one sub-pixel, or a plurality of spacers may be arranged to be adjacent with one sub-pixel therebetween. In addition, a plurality of spacers SPC may be arranged to be adjacent with at least two sub-pixels therebetween.

[0147] The light emitting layer EL is formed on the first electrode E1 in the light emitting area defined by the bank BANK. The light emitting layer EL can be formed by stacking a hole-related layer, a light emitting layer, and an electron-related layer on the first electrode E1 in sequence or in reverse order. The second electrode E2 is disposed opposite to the first electrode E1, and the light emitting layer EL is interposed between the first electrode E1 and the second electrode E2.

[0148] The encapsulation unit ENCAP blocks moisture or oxygen from penetrating into the light emitting diode ED which is susceptible to moisture or oxygen from the outside.

[0149] Such an encapsulation unit ENCAP may be formed as a layer or as Fig. 9 As shown in FIG, it can be formed by multiple layers PAS1, PCL and PAS2.

[0150] For example, when the encapsulation unit ENCAP is formed of a plurality of layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may include one or more inorganic encapsulation layers PAS1 and PAS2 and one or more organic encapsulation layers PCL. As a specific example, the encapsulation unit ENCAP may have a structure in which a first inorganic encapsulation layer PAS1, an organic encapsulation layer PCL, and a second inorganic encapsulation layer PAS2 are sequentially stacked.

[0151] Here, the organic encapsulation layer PCL may further include at least one organic encapsulation layer or at least one inorganic encapsulation layer.

[0152] The first inorganic encapsulation layer PAS1 is formed on the substrate SUB on which the second electrode E2 corresponding to the cathode electrode is formed, so as to be closest to the light emitting diode ED. The first inorganic encapsulation layer PAS1 is formed of an inorganic insulating material that allows low-temperature deposition, such as silicon nitride SiNx, silicon oxide SiOx, silicon nitride SiON, or aluminum oxide (Al2O3). Since the first inorganic encapsulation layer PAS1 is deposited under a low-temperature atmosphere, the first inorganic encapsulation layer PAS1 can suppress damage to the light emitting layer EL containing an organic material that is susceptible to a high-temperature atmosphere during the deposition process.

[0153] The organic encapsulation layer PCL is formed to have a smaller area than the first inorganic encapsulation layer PAS1, in which case the organic encapsulation layer PCL may be formed to expose both ends of the first inorganic encapsulation layer PAS1. The organic encapsulation layer PCL may be used as a buffer to relieve stress between layers caused by bending of a light-emitting display device with an integrated touch screen, i.e., an organic light-emitting display device, and may also be used to improve planarization performance. For example, the organic encapsulation layer PCL is formed of an organic insulating material such as an acrylic resin, an epoxy resin, a polyimide, polyethylene, or carbon silicon oxide (SiOC).

[0154] Meanwhile, when the organic encapsulation layer PCL is formed by inkjet, one or more dams DAM may be formed in a boundary region between the non-active area NA and the active area AA or in a dam area DA corresponding to a partial area in the non-active area NA.

[0155] As described above, the weir DAM is used to suppress the organic encapsulation layer PCL included in the encapsulation unit ENCAP from overflowing to the outside. Therefore, the higher the height of the weir DAM, the easier it is to control the overflow of the organic encapsulation layer PCL. However, according to an exemplary embodiment of the present invention, in a display device in which a touch panel is integrally formed in a display panel DISP, when a touch electrode or a touch wiring is formed, in an area with a higher step, such as an area in which a weir DAM is provided in the lower layer, the possibility of defects such as thinning or disconnection of the wiring will be higher. Therefore, in order to minimize the impact on the formation of the touch electrode or the touch wiring, it is important to adjust the height of the weir DAM. In order to reduce the step of the lower layer, the height of the weir DAM is reduced, and a plurality of weir DAMs may be provided.

[0156] For example, Fig. 9 As shown in FIG. 1 , the dam area DA is located between the pad area where a plurality of X touch pads X-TP and a plurality of Y touch pads Y-TP are formed in the non-active area NA and the active area AA. In such a dam area DA, there may be a first dam DAM1 adjacent to the active area AA and a second dam DAM2 adjacent to the pad area.

[0157] When the liquid organic encapsulation layer PCL is dropped in the active area AA, the one or more dams DAM provided in the dam area DA may suppress the liquid organic encapsulation layer PCL from collapsing toward the non-active area NA and flowing into the pad area.

[0158] like Fig. 9 As shown in FIG. 5 , this effect can be further enhanced when the first weir portion DAM1 and the second weir portion DAM2 are provided.

[0159] The first weir DAM1 and / or the second weir DAM2 may be formed as a single-layer structure or a multi-layer structure. For example, the first weir DAM1 and / or the second weir DAM2 may be formed simultaneously from the same material as at least one of the planarization layer PLN, the bank BANK, and the spacer SPC. In this case, the weir structure may be formed without increasing the mask process and without increasing the cost.

[0160] In addition, if Fig. 9 As shown in , the first dam portion DAM1 and / or the second dam portion DAM2 may be formed with a structure in which the first inorganic encapsulation layer PAS1 and / or the second inorganic encapsulation layer PAS2 are stacked on the bank portion BANK.

[0161] In addition, if Fig. 9 As shown in FIG. 1 , the organic encapsulation layer PCL including an organic material may be located only on the inner side surface of the first dam portion DAM1 .

[0162] In contrast, the organic encapsulation layer PCL including an organic material may also be located over at least a portion of the first dam portion DAM1 and the second dam portion DAM2. For example, the organic encapsulation layer PCL may be located over the first dam portion DAM1.

[0163] The second inorganic encapsulation layer PAS2 may be formed on the substrate SUB on which the organic encapsulation layer PCL is formed, thereby covering the upper surface and the side surface of each of the organic encapsulation layer PCL and the first inorganic encapsulation layer PAS1. The second inorganic encapsulation layer PAS2 may minimize or block the penetration of external moisture or oxygen into the first inorganic encapsulation layer PAS1 and the organic encapsulation layer PCL. Such a second inorganic encapsulation layer PAS2 is formed of an inorganic insulating material such as silicon nitride SiNx, silicon oxide SiOx, silicon nitride oxide SiON, or aluminum oxide Al2O3.

[0164] A touch buffer layer T-BUF may be disposed on the encapsulation unit ENCAP and may be located between the second electrode E2 of the light emitting diode ED and the touch sensor metal including the X touch electrode X-TE, the Y touch electrode Y-TE, the X touch electrode connection line X-CL, and the Y touch electrode connection line Y-CL.

[0165] The touch buffer layer T-BUF may be designed to keep the distance between the touch sensor metal (e.g., touch electrode or touch electrode line) and the second electrode E2 of the light emitting diode ED at a predetermined minimum distance (e.g., 1 μm). Therefore, the parasitic capacitance formed between the touch sensor metal and the second electrode E2 of the light emitting diode ED may be reduced or suppressed, thereby suppressing the reduction of touch sensitivity due to the parasitic capacitance.

[0166] The touch sensor metal including the X touch electrode X-TE, the Y touch electrode Y-TE, the X touch electrode connection line X-CL, and the Y touch electrode connection line Y-CL may be provided without providing the touch buffer layer T-BUF.

[0167] In addition, the touch buffer layer T-BUF can suppress the penetration of chemical solutions (developers, etchants, etc.) used in the manufacturing process of the touch sensor metal provided on the touch buffer layer T-BUF, moisture from the outside, etc. into the light-emitting layer EL including organic materials. In this way, the touch buffer layer T-BUF can suppress damage to the light-emitting layer EL which is susceptible to chemical solutions or moisture.

[0168] The touch buffer layer T-BUF may be formed of an organic insulating material formed at a low temperature of a predetermined temperature (e.g., 100° C.) or lower to suppress damage to the light-emitting layer EL including an organic material susceptible to high temperature. This organic insulating material has a low dielectric constant of 1 to 3. For example, the touch buffer layer T-BUF may be formed of an acrylic-based material, an epoxy-based material, or a siloxane-based material. The touch buffer layer T-BUF formed of an organic insulating material and having a planarization property may suppress damage to the encapsulation layers PAS1, PCL, and PAS2 constituting the encapsulation unit ENCAP caused by bending of the organic light-emitting display device. In addition, the touch buffer layer T-BUF may suppress cracking of the touch sensor metal formed on the touch buffer layer T-BUF.

[0169] According to the mutual capacitance-based touch sensor structure, the X touch electrode lines X-TEL and the Y touch electrode lines Y-TEL are disposed on the touch buffer layer T-BUF and may be disposed to cross each other.

[0170] The Y touch electrode line Y-TEL may include a plurality of Y touch electrodes Y-TE and a plurality of Y touch electrode connection lines Y-CL electrically connecting the plurality of Y touch electrodes Y-TE.

[0171] like Fig. 9 As shown in , a plurality of Y touch electrodes Y-TE and a plurality of Y touch electrode connection lines Y-CL may be disposed on different layers with a touch insulating layer T-ILD therebetween.

[0172] The plurality of Y touch electrodes Y-TE may be spaced apart from each other by a predetermined distance along the y-axis direction, and each of the plurality of Y touch electrodes Y-TE may be electrically connected to another Y touch electrode Y-TE adjacent to the y-axis direction through a Y touch electrode connection line Y-CL.

[0173] The Y touch electrode connection line Y-CL is formed on the touch buffer layer T-BUF and is exposed through a touch contact hole penetrating the touch insulating layer T-ILD, thereby being electrically connected to two Y touch electrodes Y-TE adjacent to each other in the y-axis direction.

[0174] The Y touch electrode connection line Y-CL may be disposed to overlap the bank BANK. Therefore, it is possible to suppress a decrease in the aperture ratio due to the Y touch electrode connection line Y-CL.

[0175] The X touch electrode line X-TEL may include a plurality of X touch electrodes X-TE and a plurality of X touch electrode connection lines X-CL electrically connecting the plurality of X touch electrodes X-TE.

[0176] The plurality of X touch electrodes X-TE may be spaced apart from each other by a predetermined distance along the x-axis direction on the touch insulating layer T-ILD, and each of the plurality of X touch electrodes X-TE may be electrically connected to another X touch electrode X-TE adjacent to the x-axis direction through an X touch electrode connection line X-CL.

[0177] The X touch electrode connection line X-CL is disposed on the same plane as the X touch electrode X-TE to be electrically connected to two X touch electrodes X-TE adjacent in the x-axis direction without having a separate contact hole, or the X touch electrode connection line X-CL may be formed as one body with two X touch electrodes X-TE adjacent in the x-axis direction.

[0178] The X touch electrode connection line X-CL may be disposed to overlap the bank BANK. Therefore, it is possible to suppress a decrease in the aperture ratio due to the X touch electrode connection line X-CL.

[0179] At the same time, the Y touch electrode line Y-TEL may be electrically connected to the touch drive circuit TDC through the Y touch wiring Y-TL and the Y touch pad Y-TP. Similarly, the X touch electrode line X-TEL may be electrically connected to the touch drive circuit TDC through the X touch wiring X-TL and the X touch pad X-TP.

[0180] A pad covering electrode covering the X touch pad X-TP and the Y touch pad Y-TP may be further provided.

[0181] The X touch pad X-TP may be formed separately from the X touch wiring X-TL, or the X touch pad X-TP may be formed by extending the X touch wiring X-TL. The Y touch pad Y-TP may be formed separately from the Y touch wiring Y-TL, or the Y touch pad Y-TP may be formed by extending the Y touch wiring Y-TL.

[0182] When the X touch pad X-TP is formed by extending the X touch wiring X-TL and the Y touch pad Y-TP is formed by extending the Y touch wiring Y-TL, the X touch pad X-TP, the X touch wiring X-TL, the Y touch pad Y-TP and the Y touch wiring Y-TL may be formed of the same first conductive material. Here, the first conductive material may be formed into a single layer or multilayer structure using a metal having strong corrosion resistance and acid resistance and excellent conductivity, such as Al, Ti, Cu or Mo.

[0183] For example, each of the X touch pad X-TP, the X touch wiring X-TL, the Y touch pad Y-TP, and the Y touch wiring Y-TL formed of the first conductive material may be formed in a three-layer stacked structure such as Ti / Al / Ti or Mo / Al / Mo.

[0184] The pad covering electrode covering the X touch pad X-TP and the Y touch pad Y-TP may be made of the same material as the X touch electrode X-TE and the Y touch electrode Y-TE, that is, a second conductive material. Here, the second conductive material may be formed of a transparent conductive material having strong corrosion resistance and acid resistance, such as ITO or IZO. Such a pad covering electrode is formed to be exposed by the touch buffer layer T-BUF, thereby bonding with the touch drive circuit TDC or bonding with a circuit film on which the touch drive circuit TDC is mounted.

[0185] Here, an organic cover layer C-PAC is formed to cover the touch sensor metal to suppress corrosion of the touch sensor metal due to moisture from the outside. For example, the organic cover layer C-PAC may be formed of an organic insulating material or may be formed in the form of a circular polarizing plate or an epoxy resin or an acrylic film. Such an organic cover layer C-PAC may not be provided on the encapsulation unit ENCAP. That is, the organic cover layer C-PAC is not an essential component.

[0186] The Y touch wiring Y-TL may be electrically connected to the Y touch electrode Y-TE via a touch wiring contact hole, or the Y touch wiring Y-TL may be formed integrally with the Y touch electrode Y-TE.

[0187] Such a Y touch wiring Y-TL extends to the non-active area NA, passes through the upper and side surfaces of the encapsulation unit ENCAP and the upper and side surfaces of the dam portion DAM, and is electrically connected to the Y touch pad Y-TP. Therefore, the Y touch wiring Y-TL can be electrically connected to the touch drive circuit TDC through the Y touch pad Y-TP.

[0188] The Y touch wiring Y-TL may transmit the touch sensing signal from the Y touch electrode Y-TE to the touch driving circuit TDC, or the Y touch wiring Y-TL may be provided with the touch driving signal from the touch driving circuit TDC to transmit the touch driving signal to the Y touch electrode Y-TE.

[0189] The X touch wiring X-TL may be electrically connected to the X touch electrode X-TE via a touch wiring contact hole, or the X touch wiring X-TL may be formed integrally with the X touch electrode X-TE.

[0190] Such an X touch wiring X-TL extends to the non-active area NA, passes through the upper and side surfaces of the encapsulation unit ENCAP and the upper and side surfaces of the dam portion DAM, and is electrically connected to the X touch pad X-TP. Therefore, the X touch wiring X-TL can be electrically connected to the touch driving circuit TDC through the X touch pad X-TP.

[0191] The X touch wiring X-TL may be provided with a touch driving signal from the touch driving circuit TDC to transmit the touch driving signal to the X touch electrode X-TE, or the X touch wiring X-TL may transmit a touch sensing signal from the X touch electrode X-TE to the touch driving circuit TDC.

[0192] The arrangement of the X touch wiring X-TL and the Y touch wiring Y-TL may be changed in various ways according to panel design specifications.

[0193] The organic cover layer C-PAC may be disposed on the X touch electrode X-TE and the Y touch electrode Y-TE. The organic cover layer C-PAC extends before or after the dam portion DAM to be also disposed on the X touch wiring X-TL and the Y touch wiring Y-TL.

[0194] at the same time, Fig. 9 The cross-sectional view conceptually illustrates the structure. Therefore, depending on the viewing direction or position, the position, thickness or width of each pattern (each layer or each electrode) may vary. In addition, additional layers may be further provided in addition to the multiple layers shown, and some of the multiple layers shown may be omitted or combined. For example, the width of the embankment BANK may be narrower than the width in the figure, or the height of the dam DAM may be higher or lower than the height in the figure. In addition, Fig. 9The cross-sectional view of illustrates a structure in which the touch electrode TE and the touch wiring TL are arranged on the entire sub-pixel SP, thereby showing an example of a structure connected to the touch pad TP along the touch wiring TL and the inclined surface of the encapsulation unit ENCAP. However, when the touch electrode TE is a mesh type as described above, the hole of the touch electrode TE may be located above the light emitting area of ​​the sub-pixel SP. A color filter CF may be further provided on the encapsulation unit ENCAP, and the color filter may be located on the touch electrode TE or between the encapsulation unit ENCAP and the touch electrode TE.

[0195] Fig.10 and Fig.11 1 is an exemplary diagram illustrating a cross-sectional structure of a color filter CF included in a display panel DISP according to an exemplary embodiment of the present invention.

[0196] Reference Fig.10 and Fig.11 , when the touch panel TSP is built in the display panel DISP and the display panel DISP is implemented as an organic light emitting display panel, the touch panel TSP may be located on the encapsulation unit ENCAP in the display panel DISP. In other words, a touch sensor metal such as a plurality of touch electrodes TE and a plurality of touch wirings TL may be disposed on the encapsulation unit ENCAP in the display panel DISP.

[0197] As described above, the touch electrode TE is formed on the encapsulation unit ENCAP, so that the touch electrode TE can be formed without significantly affecting the display performance and formation of display-related layers.

[0198] At the same time, refer to Fig.10 and Fig.11 , the second electrode E2 which may be used as a cathode electrode of the organic light emitting diode OLED may be located under the encapsulation unit ENCAP.

[0199] For example, the thickness of the encapsulation unit ENCAP may be 1 μm or more.

[0200] As described above, the thickness of the encapsulation unit ENCAP is designed to be 1 μm or more, so that the parasitic capacitance formed between the second electrode E2 of the organic light emitting diode OLED and the touch electrode TE can be reduced. Therefore, the touch sensitivity can be suppressed from being reduced due to the parasitic capacitance.

[0201] As described above, each of the plurality of touch electrodes TE may be patterned so that the electrode metal EM has a mesh pattern including two or more holes, and each of the two or more holes may correspond to one or more sub-pixels or a light emitting region of one or more sub-pixels when viewed from a vertical direction.

[0202] As described above, in a plan view, the electrode metal EM of the touch electrode TE is patterned so that the light emitting area of ​​one or more sub-pixels is arranged to correspond to the position of each of the two or more holes in the area of ​​the touch electrode TE. In this way, the light emitting efficiency of the display panel DISP can be improved.

[0203] like Fig.10 and Fig.11 As shown in , in the display panel DISP, a black matrix BM may be provided, and a color filter CF may be further provided.

[0204] The position of the black matrix BM may correspond to the position of the electrode metal EM of the touch electrode TE.

[0205] Positions of the plurality of color filters CF may correspond to positions of the plurality of touch electrodes TE or to positions of electrode metals EM forming the plurality of touch electrodes TE.

[0206] As described above, the plurality of color filters CF are located in positions corresponding to the positions of the plurality of opening regions or holes HOLE, so that the light emitting performance of the display panel DISP can be improved.

[0207] A vertical position relationship between the plurality of color filters CF and the plurality of touch electrodes TE will be described below.

[0208] like Fig.10 As shown in , a plurality of color filters CF and a black matrix BM may be located over the plurality of touch electrodes TE.

[0209] In this case, the plurality of color filters CF and the black matrix BM may be located on an overcoat layer OC disposed on the plurality of touch electrodes TE. Fig. 9 The organic cover layer C-PAC may be the same layer as the organic cover layer C-PAC or a different layer from the organic cover layer C-PAC.

[0210] Alternatively, if Fig.11 As shown in , a plurality of color filters CF and a black matrix BM may be located under the touch electrode TE.

[0211] In this case, the plurality of touch electrodes TE may be located above the overcoat layer OC on the plurality of color filters CF and the black matrix BM. Fig. 9 The touch buffer layer T-BUF or the touch insulating layer T-ILD may be the same layer or a different layer. Optionally, the touch buffer layer T-BUF or the touch insulating layer T-ILD may be provided separately from the overcoat layer OC.

[0212] As described above, the touch sensing configuration may be set without reducing the display performance by adjusting the vertical position relationship between the touch electrode TE and the display driving configuration.

[0213] Meanwhile, the display panel DISP according to an exemplary embodiment of the present invention may include a sensor such as a camera sensor or a proximity sensor, which may be disposed in the non-active area NA of the display panel DISP, but may also be disposed in a partial area of ​​the active area AA to reduce the non-active area NA.

[0214] That is, according to the type of the display panel DISP, there may be an area in which an image is not displayed but a sensor such as a camera sensor is disposed in the active area AA.

[0215] Fig.12 is a diagram illustrating a structural example in which a hole is provided in the active area AA of the display panel DISP according to an exemplary embodiment of the present invention.

[0216] Reference Fig.12 , the display panel DISP may include an active area AA where the sub-pixel SP and the touch electrode TE are disposed, and a non-active area NA located outside the active area AA.

[0217] The active area AA may include a first area A1 where subpixels SP are disposed and display images and a second area A2 where sensors such as camera sensors are disposed and do not display images. The first area A1 may be referred to as a pixel area, and the second area A2 may be referred to as a camera placement area.

[0218] The second area A2 may include an opening area A2-1 penetrating the substrate SUB and a boundary area A2-2 outside the opening area A2-1. In addition, at least one opening area may be provided in the second area A2, and at least one second area A2 may be provided in the active area AA.

[0219] For example, a first opening area and a second opening area separated from the first opening area may be provided in the second area A2. That is, a plurality of opening areas may be provided in the second area A2. In addition, a plurality of second areas A2 may be provided in the active area AA. That is, a plurality of cameras may be provided in the active area AA, thereby providing a plurality of second areas A2.

[0220] Fig.13 It is a schematic diagram along Fig.12 A cross-sectional view of the cross-section taken along line Y-Y'.

[0221] exist Fig.13 Including Fig. 9 The same components in FIG. 1 and FIG. 2 will be described in detail, and thus the description of the same components will be omitted, and only the same components as those in FIG. 2 will be described. Fig. 9 Different parts.

[0222] The substrate SUB corresponding to the opening area A2-1 and the functional layer thereon are removed. Therefore, in the opening area A2-1, the through hole and the image capture device (not shown) are located in the vertical direction. In this case, the removal process may be a drilling process using a laser. The image capture device may be located below the substrate SUB in the opening area A2-1.

[0223] In the first area A1 , the first transistor T1 , the light emitting diode ED and various functional layers are located on the substrate SUB.

[0224] The substrate SUB supports various components of the light-emitting display device with an integrated touch screen. The substrate SUB may be formed of a transparent insulating material, for example, an insulating material such as glass or plastic.

[0225] The buffer layer BUF may be located on the substrate SUB. The buffer layer BUF is a functional layer for protecting the thin film transistor TFT from impurities such as alkaline ions leaking from the substrate SUB or a layer therebelow. The buffer layer BUF may be formed of silicon oxide SiOx, silicon nitride SiNx or a multilayer thereof. The buffer layer BUF may include a multi buffer and / or an active buffer.

[0226] The first transistor T1 is located on the substrate SUB or the buffer layer BUF and includes a first node electrode NE1 corresponding to a gate electrode, a second node electrode NE2 corresponding to a source electrode or a drain electrode, a third node electrode NE3 corresponding to a drain electrode or a source electrode, a semiconductor layer SEM1, and the like.

[0227] The semiconductor layer SEM1 may be made of polycrystalline silicon p-Si. In this case, a predetermined region may be doped with impurities. In addition, the semiconductor layer SEM1 may be made of amorphous silicon a-Si or various organic semiconductor materials such as pentacene. In addition, the semiconductor layer SEM1 may be made of oxide.

[0228] The gate electrode NE1 may be formed of various conductive materials, for example, magnesium Mg, aluminum Al, nickel Ni, chromium Cr, molybdenum Mo, tungsten W, gold Au, or alloys thereof.

[0229] The gate insulating layer GI and the interlayer insulating layer ILD may be formed of an insulating material such as silicon oxide SiOx or silicon nitride SiNx or an organic insulating material. The gate insulating layer GI and the interlayer insulating layer ILD are selectively removed to form contact holes exposing the source region and the drain region.

[0230] The source electrode NE2 and the drain electrode NE3 may be formed as a single layer or multiple layers on the gate insulating layer GI or the interlayer insulating layer ILD. If necessary, a passivation layer INS composed of an inorganic insulating material may cover the source electrode NE2 and the drain electrode NE3.

[0231] The planarization layer PLN may be located on the first transistor T1. The planarization layer PLN protects the first transistor T1 and planarizes the upper portion thereof. The planarization layer PLN may be configured to have various shapes. The planarization layer PLN may be modified in various ways, for example, the planarization layer may be formed of an organic insulating layer such as benzocyclobutene (BCB) or acryl or an inorganic insulating layer such as a silicon nitride layer SiNx or a silicon oxide layer SiOx, or may be formed of a single layer or a double layer or a multilayer.

[0232] The light emitting diode ED may include a first electrode E1 corresponding to an anode electrode (or a cathode electrode), a light emitting layer EL formed on the first electrode E1 , and a second electrode E2 corresponding to a cathode electrode (or an anode electrode) formed on the light emitting layer EL.

[0233] The first electrode E1 is electrically connected to the second node electrode NE2 of the first transistor T1 exposed through a pixel contact hole penetrating the planarization layer PLN.

[0234] The bank BANK is formed in the remaining areas except the light emitting area. Therefore, the bank BANK has a bank hole exposing the first electrode E1 corresponding to the light emitting area. The bank BANK may be formed of an organic material such as polyimide, benzocyclobutene series resin or polyacrylate. The spacer SPC may be formed on the bank BANK. The spacer SPC may be used to inhibit a mask used in a subsequent process of manufacturing the light emitting layer EL from contacting the stacked material under the spacer SPC. The spacer SPC may be manufactured simultaneously with the bank BANK using a halftone mask during the process of manufacturing the bank BANK. Therefore, the spacer SPC may be formed of the same material as the bank BANK and may be formed as one body with the bank BANK.

[0235] The above-mentioned spacer SPC may be disposed anywhere on the embankment BANK. For example, the spacer SPC may be disposed on the entire upper portion of the embankment BANK, in which case the width of the spacer SPC may be smaller than the width of the embankment BANK. In addition, the spacer SPC may be disposed above the embankment BANK with a width greater than the width of the embankment BANK, in which case the spacer SPC may partially overlap the light-emitting area. In addition, the spacer SPC may be disposed above a portion of the embankment BANK. For example, the spacer SPC may be disposed on the entire embankment BANK surrounding one sub-pixel, or the spacer SPC may be disposed adjacently with one sub-pixel therebetween. In addition, the spacer SPC may be disposed adjacently with at least two sub-pixels therebetween.

[0236] The light-emitting layer EL is located on the first electrode E1. The light-emitting layer EL may include an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, etc. According to needs or processes, the above layers may be formed on the entire first area A1 or may be formed only in a partial area of ​​the first area A1. The light-emitting layer EL may be configured as a single light-emitting layer structure that emits monochromatic light, or may be configured as a structure composed of a plurality of light-emitting layers to emit white light. The light-emitting layer EL may be used Fig.13 The disconnected structure shown in FIG. 1 is not formed in the opening area A2 - 1 .

[0237] The second electrode E2 is located on the light emitting layer EL. When the light emitting display device with an integrated touch screen is a top emission type, the second electrode E2 is formed of a transparent conductive material such as indium tin oxide ITO or indium zinc oxide IZO to emit light generated in the light emitting layer EL to the upper part of the second electrode E2. The second electrode E2 may be a cathode of the light emitting diode ED.

[0238] The encapsulation unit ENCAP blocks moisture or oxygen from penetrating into the light emitting diode ED which is susceptible to moisture or oxygen from the outside.

[0239] Such an encapsulation unit ENCAP may be formed as a layer or as Fig. 9 As shown in FIG, it can be formed by multiple layers PAS1, PCL and PAS2.

[0240] For example, when the encapsulation unit ENCAP is formed of a plurality of layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may include one or more inorganic encapsulation layers PAS1 and PAS2 and one or more organic encapsulation layers PCL. As a specific example, the encapsulation unit ENCAP may have a structure in which a first inorganic encapsulation layer PAS1, an organic encapsulation layer PCL, and a second inorganic encapsulation layer PAS2 are sequentially stacked.

[0241] Here, the organic encapsulation layer PCL may further include at least one organic encapsulation layer or at least one inorganic encapsulation layer.

[0242] The first inorganic encapsulation layer PAS1 is formed on the substrate SUB on which the second electrode E2 corresponding to the cathode electrode is formed so as to be closest to the light emitting diode ED. The first inorganic encapsulation layer PAS1 is formed of an inorganic insulating material that allows low temperature deposition, such as silicon nitride SiNx, silicon oxide SiOx, silicon nitride oxide SiON, or aluminum oxide Al2O3. Since the first inorganic encapsulation layer PAS1 is deposited under a low temperature atmosphere, the first inorganic encapsulation layer PAS1 can suppress damage to the light emitting layer EL including an organic material that is susceptible to a high temperature atmosphere during a deposition process.

[0243] The organic encapsulation layer PCL is formed to have a smaller area than the first inorganic encapsulation layer PAS1, in which case the organic encapsulation layer PCL may be formed to expose both ends of the first inorganic encapsulation layer PAS1. The organic encapsulation layer PCL may be used as a buffer to relieve stress between layers caused by bending of a light-emitting display device with an integrated touch screen, i.e., an organic light-emitting display device, and may also be used to improve planarization performance. The organic encapsulation layer PCL is formed of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or carbon silicon oxide SiOC.

[0244] A touch buffer layer T-BUF may be disposed on the encapsulation unit ENCAP and may be located between the second electrode E2 of the light emitting diode ED and the touch sensor metal including the X touch electrode X-TE, the Y touch electrode Y-TE, the X touch electrode connection line X-CL, and the Y touch electrode connection line Y-CL.

[0245] The touch buffer layer T-BUF may be designed to maintain the distance between the touch sensor metal and the second electrode E2 of the light emitting diode ED at a predetermined minimum distance (e.g., 1 μm). Therefore, the parasitic capacitance formed between the touch sensor metal and the second electrode E2 of the light emitting diode ED may be reduced or suppressed, thereby suppressing the reduction of touch sensitivity due to the parasitic capacitance.

[0246] The touch sensor metal including the X touch electrode X-TE, the Y touch electrode Y-TE, the X touch electrode connection line X-CL, and the Y touch electrode connection line Y-CL may be provided without providing the touch buffer layer T-BUF.

[0247] In addition, the touch buffer layer T-BUF can suppress the penetration of chemical solutions (developers, etchants, etc.) used in the manufacturing process of the touch sensor metal provided on the touch buffer layer T-BUF, moisture from the outside, etc. into the light-emitting layer EL including organic materials. In this way, the touch buffer layer T-BUF can suppress damage to the light-emitting layer EL which is susceptible to chemical solutions or moisture.

[0248] The touch buffer layer T-BUF may be formed of an organic insulating material formed at a low temperature of a predetermined temperature (e.g., 100° C.) or lower to suppress damage to the light-emitting layer EL including an organic material susceptible to high temperature. This organic insulating material has a low dielectric constant of 1 to 3. For example, the touch buffer layer T-BUF may be formed of an acrylic-based material, an epoxy-based material, or a siloxane-based material. The touch buffer layer T-BUF formed of an organic insulating material and having a planarization property may suppress damage to the encapsulation layers PAS1, PCL, and PAS2 constituting the encapsulation unit ENCAP caused by bending of the organic light-emitting display device. In addition, the touch buffer layer T-BUF may suppress cracking of the touch sensor metal formed on the touch buffer layer T-BUF.

[0249] The X touch electrode line X-TEL and the Y touch electrode line Y-TEL are disposed above a first area A1 in which a sub-pixel SP is disposed and an image is displayed. Fig. 9 As shown in , it is disposed over the touch buffer layer T-BUF, and the X touch electrode lines X-TEL and the Y touch electrode lines Y-TEL are disposed to cross each other.

[0250] The Y touch electrode line Y-TEL may include a plurality of Y touch electrodes Y-TE and a plurality of Y touch electrode connection lines Y-CL electrically connecting the plurality of Y touch electrodes Y-TE.

[0251] An organic cover layer C-PAC may be formed over the touch sensor metal including the X touch electrode line X-TEL and the Y touch electrode line Y-TEL to cover the touch sensor metal. The organic cover layer C-PAC may suppress or at least reduce corrosion of the touch sensor metal due to moisture from the outside. For example, the organic cover layer C-PAC may be formed of an organic insulating material or may be formed in the form of a circular polarizing plate or an epoxy resin or an acrylic film.

[0252] The boundary area A2 - 2 does not include the light emitting diode ED, but includes a bypass line (not shown), a blocking structure DAM, a cutoff structure CS, etc., to cut off mutual influence between the first area A1 and the opening area A2 - 1 .

[0253] The bypass line is arranged so that various wirings passing through the opening area A2-1 in the horizontal direction or the vertical direction extend to bypass the opening area A2-1. The bypass line may be arranged on the same layer as the original line or on a different layer therefrom.

[0254] The barrier structure DAM is used to suppress or at least reduce the overflow of the organic encapsulation layer PCL of the encapsulation unit ENCAP into the opening area A2-1. Fig.13 2 illustrates that the flow of the organic encapsulation layer PCL is blocked by the blocking structure DAM1 disposed more inner than the other blocking structure DAM2 among the two blocking structures, but the organic encapsulation layer PCL may go over the inner blocking structure, which may be blocked by the outer blocking structure.

[0255] The cut-off structure CS is provided to disconnect the light emitting layer EL. When the light emitting layer EL is exposed to the outside, it may serve as a penetration path for moisture. In the opening area A2-1, the light emitting layer EL may be exposed to the outside, so the cut-off structure CS is necessary.

[0256] In the boundary area A2-2 where the light emitting diode ED is not formed, the touch sensor metal may not be provided. In the boundary area A2-2 where the touch sensor metal is not provided, a touch planarization layer T-PLN may be provided over the touch buffer layer T-BUF. The touch planarization layer T-PLN may be used to protect the light emitting layer EL cut off by the cut-off structure CS in the boundary area A2-2 from external influences. The touch planarization layer T-PLN is formed of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or carbon silicon oxide SiOC.

[0257] An organic capping layer C-PAC extending from the pixel area A1 may be formed over the touch planarization layer T-PLN.

[0258] Fig.14 It is a diagram along Figure 8 A partial cross-sectional view of a display panel DISP according to another exemplary embodiment of the present invention taken along line XX′.

[0259] Reference Fig.14 In order to display colors, an organic light emitting display device forms sub-pixels divided into red, green and blue sub-pixels and forms an organic light emitting layer having the color of the corresponding sub-pixel in each sub-pixel. Generally, a deposition method using a shadow mask is adopted for the organic light emitting layer.

[0260] A large-sized shadow mask has a problem of sagging due to its load, and thus productivity decreases when the shadow mask is used several times. Therefore, without using a shadow mask, other organic layers except the light emitting layer can be formed collectively without disconnection in each sub-pixel.

[0261] However, in the structure using the common layer, in recent years, due to the common layer provided in common to each sub-pixel, current flows to the side through the common layer continuous on a plane, so that a lateral leakage current problem is observed.

[0262] In order to suppress the lateral or at least reduce the lateral leakage current, an inverted spacer (not shown) having an inverted cone may be provided above the bank BANK. When the light-emitting layer EL is deposited after the inverted spacer is formed, the light-emitting layer is satisfactorily stacked on the flat portion due to its strong linearity. However, specifically, when the light-emitting layer encounters a structure in which the diameter of the lower portion is smaller than the diameter of the upper portion, such as an inverted cone structure, the light-emitting layer will not be stacked on the side or partially disconnected, resulting in a separated portion. At the same time, the second electrode E2 provided above the light-emitting layer EL has a metal component and is randomly deposited due to diffuse reflection of particles compared to organic materials, thereby having excellent coverage. Therefore, the second electrode is also stacked on the side of the inverted spacer, so that no separated portion is generated.

[0263] Meanwhile, when a fine metal mask used in a process of depositing the light emitting layer EL (for example, a fine metal mask included in the case of selectively forming the light emitting layer for each sub-pixel) sags due to its load, the fine metal mask serves as a main support without contacting the bank BANK or the inverted spacer. Therefore, the fine metal mask can be formed to be higher than the inverted spacer.

[0264] That is to say, Fig. 9 Unlike the exemplary embodiment of the present invention, the height of the spacer SPC above the bank BANK in the active area AA and the height of the dam DAM including the same layer as the spacer SPC in the non-active area NA may be increased. Fig.14 As shown in FIG. 1 , the Y touch wiring Y-TL passing through the region where the first dam DAM1 and the second dam DAM2 are formed is disconnected due to the high step caused by the dam DAM. Therefore, the signal of the touch electrode is not transmitted to the touch driving circuit TDC, so that the touch performance may be reduced.

[0265] Therefore, the inventors of the present invention have recognized that in a structure in which the touch panel TSP is built in the display panel DISP and includes an opening area for setting a camera in the active area AA, a touch signal is cut off due to a high step caused by a dam DAM provided in the non-display area NA. Therefore, the inventors have designed a novel structure for connecting a touch wiring formed above the dam DAM.

[0266] Fig.15 is a plan view illustrating a light emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention. Fig.16 It is a diagram along Fig.15Schematic diagram of a cross section taken along line Z-Z'.

[0267] Reference Fig.15 and Fig.16 The display panel DISP may include an active area AA where the sub-pixel SP and the touch electrode TE are disposed and a non-active area NA located outside the active area AA. The display panel DISP includes the above Figure 3 The display panel DISP has the same components and stacking structure, so a detailed description will be omitted.

[0268] A buffer layer BUF having a single layer or multilayer structure may be disposed on the substrate SUB. The substrate SUB may be formed of a flexible material. When the substrate SUB is formed of a material such as polyimide, the buffer layer BUF may be formed of a single layer consisting of any one of an inorganic material and an organic material, thereby suppressing damage to the light emitting diode caused by impurities such as alkaline ions leaking from the substrate during subsequent processes. In contrast, the buffer layer BUF may be formed of multiple layers formed of different inorganic materials. In addition, the buffer layer BUF may be formed of multiple layers formed of organic material layers and inorganic material layers. The inorganic material may include any one of a silicon oxide layer SiOx, a silicon nitride layer SiNx, and a silicon nitride oxide SiON. The organic material may include any one of polyimide, a benzocyclobutene series resin, and a polyacrylate. Examples of polyacrylates may include optical acrylic. A first transistor T1, i.e., a driving transistor, is disposed in each sub-pixel SP in the active area AA on the substrate SUB.

[0269] The first transistor T1 includes a first node electrode NE1 corresponding to a gate electrode, a second node electrode NE2 corresponding to a source electrode or a drain electrode, a third node electrode NE3 corresponding to a drain electrode or a source electrode, and a semiconductor layer SEM1.

[0270] The first node electrode NE1 and the semiconductor layer SEM1 may overlap with the gate insulating layer GI therebetween. The second node electrode NE2 is formed on the interlayer insulating layer ILD to contact one side of the semiconductor layer SEM1, and the third node electrode NE3 is formed on the interlayer insulating layer ILD to contact the other side of the semiconductor layer SEM1.

[0271] An insulating layer INS covering the second node electrode NE2, the third node electrode NE3 and the data line may be provided. The insulating layer INS may be formed of a single layer formed of an inorganic material or a multilayer formed of different inorganic materials. For example, the insulating layer INS may be formed of a single layer or a multilayer of any one of a silicon oxide layer SiOx, a silicon nitride layer SiNx and a silicon nitride oxide layer SiON.

[0272] The planarization layer PLN may be disposed on the insulating layer INS. The planarization layer PLN is formed to relieve the step of the lower structure and protect the lower structure, and the planarization layer PLN is formed of an organic material layer. The organic material may include any one of polyimide, benzocyclobutene series resin, and polyacrylate. Examples of polyacrylate may include optical acrylic.

[0273] The light emitting diode ED may include a first electrode E1 corresponding to an anode electrode (or a cathode electrode), a light emitting layer EL formed on the first electrode E1 , and a second electrode E2 corresponding to a cathode electrode (or an anode electrode) formed on the light emitting layer EL.

[0274] The first electrode E1 is electrically connected to the second node electrode NE2 of the first transistor T1 exposed through a pixel contact hole penetrating the planarization layer PLN.

[0275] A bank BANK having an opening exposing the first electrode E1 may be formed on the planarization layer PLN. The opening of the bank BANK may be a region defining a light emitting region. The bank BANK may be formed of an organic material such as polyimide, a benzocyclobutene series resin, or a polyacrylate. A spacer SPC may be formed on the bank BANK. The spacer SPC may be used to inhibit a mask used in a subsequent process of manufacturing the light emitting layer EL from contacting the stacked material below the spacer SPC. The spacer SPC may be manufactured simultaneously with the bank BANK using a halftone mask during the process of manufacturing the bank BANK. Therefore, the spacer SPC may be formed of the same material as the bank BANK and may be formed integrally with the bank BANK.

[0276] The above-mentioned spacer SPC may be disposed anywhere on the embankment BANK. For example, the spacer SPC may be disposed on the entire upper portion of the embankment BANK, in which case the width of the spacer SPC may be smaller than the width of the embankment BANK. In addition, the spacer SPC may be disposed above the embankment BANK with a width greater than the width of the embankment BANK, in which case the spacer SPC may partially overlap the light-emitting area. In addition, the spacer SPC may be disposed above a portion of the embankment BANK. For example, the spacer SPC may be disposed on the entire embankment BANK surrounding one sub-pixel, or the spacer may be disposed adjacently with one sub-pixel therebetween. In addition, the spacer SPC may be disposed adjacently with at least two sub-pixels therebetween.

[0277] The light emitting layer EL is formed on the first electrode E1 of the light emitting region defined by the bank BANK. The light emitting layer EL may be formed by stacking a hole-related layer, a light emitting layer, and an electron-related layer on the first electrode E1 in sequence or in reverse order. The second electrode E2 is disposed opposite to the first electrode E1, and the light emitting layer EL is interposed between the first electrode E1 and the second electrode E2.

[0278] The encapsulation unit ENCAP blocks moisture or oxygen from penetrating into the light emitting diode ED which is susceptible to moisture or oxygen from the outside.

[0279] Such an encapsulation unit ENCAP may be formed as a layer or as Fig. 9 As shown in FIG, it can be formed by multiple layers PAS1, PCL and PAS2.

[0280] For example, when the encapsulation unit ENCAP is formed of a plurality of layers PAS1, PCL, and PAS2, the encapsulation unit ENCAP may include one or more inorganic encapsulation layers PAS1 and PAS2 and one or more organic encapsulation layers PCL. As a specific example, the encapsulation unit ENCAP may have a structure in which a first inorganic encapsulation layer PAS1, an organic encapsulation layer PCL, and a second inorganic encapsulation layer PAS2 are sequentially stacked.

[0281] Here, the organic encapsulation layer PCL may further include at least one organic encapsulation layer or at least one inorganic encapsulation layer.

[0282] The first inorganic encapsulation layer PAS1 is formed on the substrate SUB on which the second electrode E2 corresponding to the cathode electrode is formed so as to be closest to the light emitting diode ED. The first inorganic encapsulation layer PAS1 is formed of an inorganic insulating material that allows low temperature deposition, such as silicon nitride SiNx, silicon oxide SiOx, silicon nitride oxide SiON, or aluminum oxide Al2O3. Since the first inorganic encapsulation layer PAS1 is deposited under a low temperature atmosphere, the first inorganic encapsulation layer PAS1 can suppress damage to the light emitting layer EL including an organic material that is susceptible to a high temperature atmosphere during a deposition process.

[0283] The organic encapsulation layer PCL is formed to have a smaller area than the first inorganic encapsulation layer PAS1, in which case the organic encapsulation layer PCL may be formed to expose both ends of the first inorganic encapsulation layer PAS1. The organic encapsulation layer PCL may be used as a buffer to relieve stress between layers caused by bending of a light-emitting display device with an integrated touch screen, i.e., an organic light-emitting display device, and may also be used to improve planarization performance. The organic encapsulation layer PCL is formed of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or carbon silicon oxide SiOC.

[0284] The second inorganic encapsulation layer PAS2 may be formed on the substrate SUB on which the organic encapsulation layer PCL is formed, thereby covering the upper surface and the side surface of each of the organic encapsulation layer PCL and the first inorganic encapsulation layer PAS1. The second inorganic encapsulation layer PAS2 may minimize or block external moisture or oxygen from penetrating into the first inorganic encapsulation layer PAS1 and the organic encapsulation layer PCL. The second inorganic encapsulation layer PAS2 is formed of an inorganic insulating material such as silicon nitride SiNx, silicon oxide SiOx, silicon nitride oxide SiON, or aluminum oxide Al2O3.

[0285] In the non-active area NA, a first weir DAM1 and a second weir DAM2 may be provided to surround the active area AA. The first weir DAM1 is provided close to the active area AA, and the second weir DAM2 may be provided farther from the active area AA than the first weir DAM1. Figure 2 As described in detail in , the dam portion DAM can be used to suppress the organic encapsulation layer PCL included in the encapsulation unit ENCAP from overflowing outward. Therefore, the dam portion DAM can be called a blocking structure. That is, the first dam portion DAM1 and the second dam portion DAM2 can be respectively called a first blocking structure and a second blocking structure.

[0286] The first blocking structure DAM1 and / or the second blocking structure DAM2 may be formed as a single-layer structure or a multi-layer structure. For example, the first blocking structure DAM1 may include blocking structures DM1, DM2, and DM3 stacked in sequence, and the second blocking structure DAM2 may include blocking structures DAM2-1, DAM2-2, and DAM2-3 stacked in sequence. For example, the first blocking structure DAM1 and / or the second blocking structure DAM2 may be formed by stacking the same materials as the planarization layer PLN, the bank BANK, and the spacer SPC in sequence.

[0287] The blocking structure DAM is used to suppress or at least reduce the overflow of the organic encapsulation layer PCL, so that the first blocking structure DAM1 adjacent to the active area AA and the second blocking structure DAM2 disposed further outward may not be formed to have the same stacked structure. That is, the organic encapsulation layer PCL is mainly blocked by the first blocking structure DAM1, so that the second blocking structure DAM2 may be formed to be lower than the first blocking structure DAM1.

[0288] A touch buffer layer T-BUF may be disposed above the encapsulation unit ENCAP and between the second electrode E2 of the light emitting diode ED and a touch sensor metal including the X touch electrode X-TE, the Y touch electrode Y-TE, the X touch electrode connection line X-CL, and the Y touch electrode connection line Y-CL.

[0289] The touch buffer layer T-BUF may be designed to maintain the distance between the touch sensor metal and the second electrode E2 of the light emitting diode ED at a predetermined minimum distance (e.g., 1 μm). Therefore, the parasitic capacitance formed between the touch sensor metal and the second electrode E2 of the light emitting diode ED may be reduced or suppressed, thereby suppressing the reduction of touch sensitivity due to the parasitic capacitance.

[0290] In the active area AA, the X touch electrode line X-TEL and the Y touch electrode line Y-TEL are disposed on the touch buffer layer T-BUF, and the X touch electrode line X-TEL and the Y touch electrode line Y-TEL are disposed to cross each other.

[0291] The Y touch electrode line Y-TEL may include a plurality of Y touch electrodes Y-TE and a plurality of Y touch electrode connection lines Y-CL electrically connecting the plurality of Y touch electrodes Y-TE.

[0292] The plurality of Y touch electrodes Y-TE and the plurality of Y touch electrode connection lines Y-CL may be disposed on different layers with a touch insulating layer T-ILD therebetween.

[0293] The plurality of Y touch electrodes Y-TE may be spaced apart from each other by a predetermined distance along the y-axis direction, and each of the plurality of Y touch electrodes Y-TE may be electrically connected to another Y touch electrode Y-TE adjacent to the y-axis direction through a Y touch electrode connection line Y-CL.

[0294] The Y touch electrode connection line Y-CL is formed on the touch buffer layer T-BUF and is exposed through a touch contact hole penetrating the touch insulating layer T-ILD, thereby being electrically connected to two Y touch electrodes Y-TE adjacent to each other in the y-axis direction.

[0295] The X touch electrode line X-TEL may include a plurality of X touch electrodes X-TE and a plurality of X touch electrode connection lines X-CL electrically connecting the plurality of X touch electrodes X-TE.

[0296] The plurality of X touch electrodes X-TE may be spaced apart from each other by a predetermined distance along the x-axis direction on the touch insulating layer T-ILD, and each of the plurality of X touch electrodes X-TE may be electrically connected to another X touch electrode X-TE adjacent to the x-axis direction through an X touch electrode connection line X-CL.

[0297] The X touch electrode connection line X-CL is disposed on the same plane as the X touch electrode X-TE to be electrically connected to two X touch electrodes X-TE adjacent in the x-axis direction without having a separate contact hole, or the X touch electrode connection line X-CL may be formed as one body with two X touch electrodes X-TE adjacent in the x-axis direction.

[0298] Meanwhile, the Y touch electrode line Y-TEL may be electrically connected to the touch drive circuit TDC through the Y touch wiring Y-TL and the Y touch pad Y-TP disposed in the non-active area NA. Similarly, the X touch electrode line X-TEL may be electrically connected to the touch drive circuit TDC through the X touch wiring X-TL and the X touch pad X-TP disposed in the non-active area NA.

[0299] A step compensation layer SCL may be provided between the touch buffer layer T-BUF and the X touch wiring X-TL and the Y touch wiring Y-TL. The step compensation layer SCL may be formed to overlap with the first barrier structure and the second barrier structure. The step compensation layer SCL may be provided to alleviate the high step generated by the increase in the overall height of the barrier structure DAM due to the increase in the height of the spacer SPC. The step compensation layer SCL may be provided between the first barrier structure and the second barrier structure. Fig.12 The touch planarization layer T-PLN in the boundary area A2-2 in the above-mentioned active area AA where the light emitting diode ED is not formed is on the same plane, and can be formed of the same material as the touch planarization layer T-PLN. That is, when the touch planarization layer T-PLN is formed in the boundary area A2-2, the step compensation layer SCL can be formed at the same time and overlap with the blocking structure DAM in the non-active area NA. In this case, the step compensation layer SCL can be formed without increasing the mask process and the cost.

[0300] The area where the step compensation layer SCL is disposed may vary according to the shapes of the first and second barrier structures. For example, when the height of the second barrier structure is formed to be smaller than that of the first barrier structure so that the step is steeply generated, the step compensation layer may overlap a portion of the first and second barrier structures. Fig.17 As shown in , when the heights of the first barrier structure and the second barrier structure are the same, the step compensation layer may be formed to cover both the first barrier structure and the second barrier structure.

[0301] Here, an organic cover layer C-PAC may be formed to cover the X touch electrode X-TE, the Y touch electrode Y-TE, and the touch wiring TL to suppress corrosion of the touch electrode and the touch wiring TL due to external moisture, etc. For example, the organic cover layer C-PAC may be formed of an organic insulating material or may be formed in the form of a circular polarization plate or an epoxy resin or an acrylic film. For example, the organic cover layer C-PAC may be formed of the same material as the touch planarization layer T-PLN and the step compensation layer SCL.

[0302] As described above, according to the present invention, a step compensation layer SCL formed of the same material as the touch planarization layer T-PLN is formed in the high step region where the touch wiring overlaps the blocking structure to alleviate the step caused by the blocking structure DAM. Therefore, the disconnection of the touch wiring TL passing through the blocking structure DAM can be suppressed.

[0303] As described above, the light-emitting display device with an integrated touch screen according to the example of the present invention forms a step compensation layer SCL formed of the same material as the touch planarization layer T-PLN in the high step region where the touch wiring TL overlaps the blocking structure DAM. Therefore, the step caused by the blocking structure DAM is alleviated, thereby suppressing the disconnection of the touch wiring TL passing through the blocking structure DAM. Therefore, a display device with an integrated touch screen that achieves stable touch performance can be provided.

[0304] A light emitting display device with an integrated touch screen according to exemplary embodiments of the present invention will be described as follows.

[0305] A light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention includes a substrate SUB including a display area (or active area) AA provided with a plurality of pixels and a non-display area (or non-active area) NA surrounding the display area AA. The light-emitting display device may include an opening area A2-1 located inside the display area AA and penetrating the substrate SUB; and a boundary area A2-2 provided to contact the outside of the opening area A2-1. In the display area AA, there is a pixel area A1 other than the opening area A2-1 and the boundary area A2-2. The light-emitting display device may include an encapsulation unit ENCAP covering the pixel area A1, the non-display area NA, and the boundary area A2-2. The light-emitting display device may include a plurality of first touch electrodes X-TE provided on the encapsulation unit ENCAP of the pixel area A1 and extending in a first direction and a plurality of second touch electrodes Y-TE extending in a second direction. The light-emitting display device may include a first blocking structure DAM1 and a second blocking structure DAM2 provided in the non-display area NA and configured to surround the display area AA. The first touch wiring X-TL may be provided on the first barrier structure DAM1 and the second barrier structure DAM2 and connected to the first touch electrode X-TE. The second touch wiring Y-TL may be provided on the first barrier structure DAM1 and the second barrier structure DAM2 and connected to the second touch electrode Y-TE. The light-emitting display device may include an organic cover layer C-PAC covering the first touch wiring X-TL and the second touch wiring Y-TL; and a touch buffer layer T-BUF covering the encapsulation unit ENCAP. The light-emitting display device may include a step compensation layer SCL located between the touch buffer layer T-BUF and the first touch wiring X-TL and the second touch wiring Y-TL, and the step compensation layer SCL may be provided to overlap with the first barrier structure DAM1 and the second barrier structure DAM2.

[0306] For example, the encapsulation unit ENCAP may be composed of at least three layers to suppress moisture or oxygen from penetrating into the pixel region. For example, the encapsulation unit ENCAP may be formed of two inorganic encapsulation layers PAS1 and PAS2 and one organic encapsulation layer PCL.

[0307] The organic encapsulation layer PCL planarizes a surface of the inorganic encapsulation layer PAS1 below the organic encapsulation layer PCL, and a height of the organic encapsulation layer PCL may decrease from the display area AA toward the barrier structure DAM.

[0308] For example, in the display area AA, it may further include: a light emitting diode ED; a thin film transistor connected to the light emitting diode; a planarization layer PLN disposed on the thin film transistor; a bank BANK exposing the anode electrode E1 of the light emitting diode; and a spacer SPC above the bank. Each of the first blocking structure DAM1 and the second blocking structure DAM2 may be formed of the same material as at least one of the planarization layer PLN, the bank BANK, and the spacer SPC.

[0309] For example, the step compensation layer SCL may contact the touch buffer layer T-BUF and may overlap a portion of the first and second barrier structures DAM1 and DAM2. The step compensation layer SCL may be formed of the same material as the organic encapsulation layer PCL included in the encapsulation unit ENCAP.

[0310] For example, the light-emitting display device may further include: a touch planarization layer T-PLN covering the touch buffer layer T-BUF of the boundary area A2-2, and the touch planarization layer T-PLN may be arranged on the same plane as the step compensation layer SCL and may be formed of the same material as the step compensation layer SCL.

[0311] In addition, a light-emitting display device with an integrated touch screen according to an exemplary embodiment of the present invention includes a substrate SUB including a display area AA provided with a plurality of pixels and a non-display area NA surrounding the display area AA. A light-emitting diode ED may be provided in the display area AA. An encapsulation unit ENCAP covering the display area AA and the non-display area NA is provided, and a touch electrode line TEL may be provided on the encapsulation unit ENCAP. A touch wiring TL connected to the touch electrode line TEL may be formed in the non-display area NA. An organic cover layer C-PAC may be included, the organic cover layer C-PAC being formed over and covering the touch electrode line TEL and the touch wiring TL. A plurality of blocking structures DAM provided in the non-display area NA and configured to surround the display area AA may be included, and a step compensation layer SCL may be included between the encapsulation unit ENCAP and the touch wiring TL. The step compensation layer SCL reduces steps caused by the plurality of blocking structures DAM, thereby reducing irregularities of a surface of the encapsulation unit ENCAP.

[0312] For example, it may further include: an opening area A2-1 located inside the display area AA and penetrating the substrate SUB; and a boundary area A2-2 arranged to contact the outside of the opening area A2-1. A touch planarization layer T-PLN covering the encapsulation unit ENCAP may be arranged in the boundary area A2-2. Here, the touch planarization layer T-PLN and the step compensation layer SCL may be arranged on the same plane and formed of the same material.

[0313] For example, it may further include: a light emitting diode ED; a thin film transistor connected to the light emitting diode; a planarization layer PLN disposed on the thin film transistor; a bank BANK exposing the anode electrode E1 of the light emitting diode; and a spacer SPC above the bank BANK. Each of the plurality of blocking structures DAM may be formed of the same material as at least one of the planarization layer PLN, the bank BANK, and the spacer SPC.

[0314] A touch buffer layer T-BUF may be further included between the step compensation layer SCL and the encapsulation unit ENCAP.

[0315] For example, the plurality of barrier structures DAM may include first and second barrier structures DAM1 and DAM2 , and the step compensation layer SCL contacts the touch buffer layer T-BUF and may overlap a portion of the first and second barrier structures DAM1 and DAM2 .

[0316] For example, the plurality of barrier structures DAM may include a first barrier structure DAM1 and a second barrier structure DAM2 , and the step compensation layer SCL contacts the touch buffer layer T-BUF and may cover both the first barrier structure and the second barrier structure.

[0317] Although the exemplary embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited thereto, and the present invention can be implemented in many different forms without departing from the technical concept of the present invention. Therefore, the exemplary embodiments of the present invention are provided only for the purpose of illustration and are not intended to limit the technical concept of the present invention. The scope of the technical concept of the present invention is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are merely illustrative in all aspects and do not limit the present invention. The scope of protection of the present invention should be interpreted based on the attached claims, and all technical concepts within the equivalent scope thereof should be interpreted as falling within the scope of the present invention.

Claims

1. A display device, comprising: A flexible substrate including a first area for displaying an image and a second area including an opening area and a boundary area surrounding the opening area; at least one dam portion on the flexible substrate, the at least one dam portion being in the boundary region of the second region; A packaging unit on the flexible substrate, the packaging unit comprising an inorganic layer and an organic layer; A plurality of touch electrodes on the packaging unit, wherein the plurality of touch electrodes are arranged in a mesh shape; a plurality of touch wirings connected to the plurality of touch electrodes; a touch buffer layer located between the packaging unit and the plurality of touch electrodes, the touch buffer layer extending to the boundary area of ​​the second area; a first touch planarization layer on the package unit, the first touch planarization layer overlapping a portion of the at least one dam portion in the boundary region; a touch insulating layer on the first touch planarization layer, wherein the touch insulating layer extends to the boundary area of ​​the second area; as well as A second touch planarizing layer is on at least a portion of the first touch planarizing layer.

2. The display device according to claim 1, further comprising: A camera overlaps the opening area in the second area. The display device according to claim 1 , wherein the boundary area extends to the opening area. 4 . The display device according to claim 3 , wherein the first region is a pixel region excluding the opening region and the boundary region. 5 . The display device of claim 1 , wherein the touch insulation layer is located between the first touch planarization layer and the second touch planarization layer in the boundary region.

6. The display device according to claim 1, further comprising: a light emitting diode in the first region, the light emitting diode comprising a first electrode, a light emitting layer on the first electrode, and a second electrode on the light emitting layer; a thin film transistor connected to the light emitting diode; a planarization layer on the thin film transistor; a bank on the first electrode of the light emitting diode such that a portion of the first electrode is exposed; and A spacer is provided on the bank.

7. The display device according to claim 6, further comprising: A cutting structure overlaps the first touch planarizing layer in the second region, the cutting structure disconnecting the light emitting layer into a plurality of different parts, the plurality of different parts being not connected to each other in the first region. 8 . The display device according to claim 7 , wherein the second electrode overlaps a portion of the at least one dam portion in the second region. 9 . The display device according to claim 7 , wherein the at least one dam portion is located between the opening region and the first region, and the light emitting layer extends from the first region to the second region and overlaps with the at least one dam portion. 10 . The display device according to claim 1 , wherein an end portion of the organic layer of the encapsulation unit is located at a position in the second region that is different from a position of an end portion of the touch buffer layer in the second region. 11 . The display device according to claim 6 , wherein the flexible substrate further includes a non-display area outside the first area, and the first area surrounds the second area.

12. The display device according to claim 11, further comprising: At least one dam structure on the flexible substrate in the non-display area. 13 . The display device of claim 12 , wherein the at least one dam structure comprises a blocking structure comprising a same material as the bank.

14. The display device according to claim 12, further comprising: A step compensation layer is provided between the touch buffer layer and the plurality of touch wirings in the non-display area, the step compensation layer overlapping a portion of the at least one dam structure. The display device of claim 14 , wherein the step compensation layer contacts the touch buffer layer. 16 . The display device of claim 15 , wherein the step compensation layer includes the same material as the organic layer included in the encapsulation unit.

17. The display device according to claim 12, further comprising: A pad is provided in the non-display area and is connected to a touch wiring among the plurality of touch wirings, wherein the at least one dam structure is located between the pad and the plurality of touch electrodes.

18. The display device according to claim 1, further comprising: A color filter is formed on the plurality of touch electrodes in the first area. 19 . The display device of claim 1 , wherein the inorganic layer of the encapsulation unit comprises a first inorganic layer and a second inorganic layer, and the organic layer is located between the first inorganic layer and the second inorganic layer.

20. The display device according to claim 19, wherein: The touch buffer layer is located between the second inorganic layer of the encapsulation unit and the first touch planarization layer in the second region.

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