Method and System for Detecting Microscopic Defects of Gallium Oxide Crystals Based on Image Processing

Abstract

This application relates to the field of defect detection technology, and particularly to a method and system for detecting microscopic defects of gallium oxide crystals based on image processing. The steps of the method include: obtaining a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously obtaining an infrared image of the solid-liquid interface; determining the solid-liquid interface shape coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface; determining the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface; determining the microscopic defect generation index of the gallium oxide crystal through the solid-liquid interface shape coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient, and giving a warning of microscopic defect generation when the microscopic defect generation index is greater than a preset microscopic defect generation threshold. This application improves the timeliness and reliability of microscopic defect detection of gallium oxide crystals by analyzing the microscopic defect generation conditions of gallium oxide crystals.

Description

Technical Field

[0001] This application relates to the technical field of defect detection, and particularly to a method and system for detecting microscopic defects of gallium oxide crystals based on image processing. Background Art

[0002] Gallium oxide ( ), as a kind of ultra-wide bandgap semiconductor material, due to its excellent properties such as wide bandgap, low energy loss, fast response speed, and low single crystal preparation cost, can be used to manufacture high-power power electronic devices, radio frequency devices, solar-blind ultraviolet photodetector devices, high-brightness LEDs and other devices, and has broad application prospects in the fields of rail transit, photovoltaic power generation, smart grid, new energy vehicles, medical imaging, and environmental and biochemical detection.

[0003] A gallium oxide crystal is a structure with a regular geometric shape formed by a large number of microscopic material units arranged in an orderly manner according to certain rules. Its microscopic defects usually refer to the incomplete regions where the arrangement of atoms in the internal structure of the gallium oxide crystal deviates from the ideal structure and the regions where the integrity of the crystal structure is damaged. According to the size and shape of the incomplete regions in the crystal internal structure, the crystal microscopic defects are usually divided into three types: point defects, line defects, and surface defects. Among them, point defects refer to lattice defects involving the size range of one atom, including types such as vacancies, interstitial atoms, and impurity atoms; line defects are also called dislocations, and the periodic destruction inside the lattice occurs on a line. The misaligned atoms no longer arrange orderly near the line, but instead undergo mutual slip movement between rows and columns, resulting in plastic deformation of the crystal; surface defects are also called grain boundaries, referring to the boundaries where the crystal arrangement direction suddenly changes, mainly including types such as grain boundaries, twin boundaries, phase boundaries, and stacking faults.

[0004] The existence of microscopic defects in gallium oxide crystals, as well as the quantity and distribution of the defects, have a great impact on the thermal conductivity, resistance, optical and mechanical properties of gallium oxide crystals. At the same time, it seriously affects performance indicators such as the strength, plasticity, and tensile degree of gallium oxide crystals. Existing methods for detecting microscopic defects of gallium oxide crystals usually detect microscopic defects of the crystal by using high-resolution microscopic imaging devices such as optical microscopes, scanning electron microscopes, transmission electron microscopes, and atomic force microscopes after the crystal growth is completed, ignoring the correlation between the morphology and stability of the solid-liquid interface and the distribution of crystal thermal stress during the growth process of gallium oxide crystals on the generation of crystal microscopic defects. The morphology and stability of the solid-liquid interface determine the atomic stacking mode during the crystal growth process, and uneven distribution of thermal stress will lead to the appearance of microscopic defects such as cracks and dislocations inside the crystal, affecting the optical and electronic properties of gallium oxide crystals. Summary of the Invention

[0005] To overcome the defects and deficiencies of the existing technology, the present application provides a method and system for detecting microscopic defects of gallium oxide crystals based on image processing. By comprehensively analyzing the solid-liquid interface morphology, stability, and crystal thermal stress distribution during the growth process of gallium oxide crystals, the timeliness and reliability of detecting microscopic defects of gallium oxide crystals are improved.

[0006] To achieve the above object, the present application adopts the following technical solutions:

[0007] In the first aspect, an embodiment of the present application provides a method for detecting microscopic defects of gallium oxide crystals based on image processing, including the following steps:

[0008] Obtain a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth process of gallium oxide crystals, and at the same time obtain an infrared image of the solid-liquid interface;

[0009] Determine the solid-liquid interface shape coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface;

[0010] Determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface;

[0011] Determine the microscopic defect generation index of the gallium oxide crystal through the solid-liquid interface shape coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. When the microscopic defect generation index is greater than the preset microscopic defect generation threshold, a warning of microscopic defect generation is given.

[0012] Optionally, the specific steps for determining the solid-liquid interface shape coefficient include:

[0013] Obtain the three-dimensional image of the solid-liquid interface and a preset three-dimensional image of the solid-liquid interface. Taking the bottom plane of the crystal furnace as the xOy plane and the height of the solid-liquid interface as the z-axis, a space rectangular coordinate system is constructed, and the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface are mapped into the space rectangular coordinate system. Among them, the preset three-dimensional image of the solid-liquid interface is obtained through CGSim crystal growth simulation software. CGSim crystal growth simulation software can simulate the solid-liquid interface during the crystal growth process by combining the finite volume method and the finite element method, and take the optimal three-dimensional image of the solid-liquid interface obtained by simulation as the preset three-dimensional image of the solid-liquid interface;

[0014] Calculate the solid-liquid interface shape coefficient through the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface. The calculation formula for the solid-liquid interface shape coefficient is:

[0015] ;

[0016] In the formula represents the three-dimensional image of the solid-liquid interface in the pixel of the space rectangular coordinate system The height value at represents the height value of a preset solid-liquid interface three-dimensional image in a spatial rectangular coordinate system at a pixel position, represents the number of pixels of the solid-liquid interface three-dimensional image on the x-axis, represents the number of pixels of the solid-liquid interface three-dimensional image on the y-axis, represents the morphological coefficient of the solid-liquid interface.

[0017] Optionally, the specific steps for determining the stability coefficient of the solid-liquid interface include:

[0018] Obtain the three-dimensional image of the solid-liquid interface;

[0019] Calculate the stability coefficient of the solid-liquid interface through the three-dimensional image of the solid-liquid interface. The calculation formula for the stability coefficient of the solid-liquid interface is:

[0020] ;

[0021] In the formula represents the change coefficient of the solid-liquid interface at the th monitoring time point, represents the number of monitoring time points, represents the maximum value of the change coefficient of the solid-liquid interface, represents the stability coefficient of the solid-liquid interface.

[0022] Optionally, the calculation formula for the change coefficient of the solid-liquid interface is:

[0023] ;

[0024] In the formula represents the height value of the solid-liquid interface three-dimensional image in a spatial rectangular coordinate system at a pixel position at the th monitoring time point, represents the height value of the solid-liquid interface three-dimensional image in a spatial rectangular coordinate system at a pixel position at the th monitoring time point, represents the number of pixels of the solid-liquid interface three-dimensional image on the xOy plane of the spatial rectangular coordinate system, represents the th monitoring time point's change coefficient of the solid-liquid interface.

[0025] Optionally, the specific steps for determining the thermal stress distribution coefficient include:

[0026] Obtain the infrared image of the solid-liquid interface;

[0027] Taking the center point of the solid-liquid interface as the center, successively construct circles with radii of of concentric circles, and calculating the average circumferential temperature of the concentric circles with a radius of The formula for calculating the average circumferential temperature is:

[0028] ;

[0029] In the formula represents the temperature value at pixel on the circumference of the concentric circle with a radius of , represents the number of pixels on the circumference of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of ;

[0030] Calculating the circumferential temperature gradient through the average circumferential temperature. The formula for calculating the circumferential temperature gradient is:

[0031] ;

[0032] In the formula represents the average circumferential temperature of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of , represents the circumferential temperature gradient of the concentric circle with a radius of ;

[0033] Calculating the circumferential thermal stress through the circumferential temperature gradient. The formula for calculating the circumferential thermal stress is:

[0034] ;

[0035] In the formula represents the elastic modulus of the gallium oxide crystal, represents the linear thermal expansion coefficient of the gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, represents the circumferential temperature gradient of the concentric circle with a radius of , represents the circumferential thermal stress of the concentric circle with a radius of . Among them, the elastic modulus, linear thermal expansion coefficient, and Poisson's ratio of the gallium oxide crystal are obtained from the material property database;

[0036] Calculating the thermal stress distribution coefficient through the circumferential thermal stress. The formula for calculating the thermal stress distribution coefficient is:

[0037] ;

[0038] In the formula Represents the circumferential thermal stress of concentric circles with a radius of , and represents the number of concentric circles, and represents the thermal stress distribution coefficient.

[0039] Optionally, the specific steps for determining the microscopic defect generation index of the gallium oxide crystal include:

[0040] Obtain the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient;

[0041] Calculate the microscopic defect generation index through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. The calculation formula for the microscopic defect generation index is:

[0042] ;

[0043] In the formula, represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, and represents the microscopic defect generation index.

[0044] It should be noted here that the value-taking methods of the solid-liquid interface morphology weight, the solid-liquid interface stability weight, the thermal stress distribution weight, and the preset microscopic defect generation threshold are as follows: Collect 5000 sets of three-dimensional images of the solid-liquid interface and infrared images of the solid-liquid interface, distinguish whether microscopic defects are generated during the growth process of the gallium oxide crystal, substitute the three-dimensional images of the solid-liquid interface and the infrared images of the solid-liquid interface into the calculation formula of the microscopic defect generation index for calculation, and import the calculated microscopic defect generation index and the discrimination result into the fitting software at the same time to output the optimal solid-liquid interface morphology weight, solid-liquid interface stability weight, thermal stress distribution weight, and preset microscopic defect generation threshold that meet the discrimination accuracy of the discrimination result.

[0045] In a second aspect, an embodiment of the present application provides a microscopic defect detection system for gallium oxide crystals based on image processing, including:

[0046] An image acquisition module for acquiring a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth process of the gallium oxide crystal, and simultaneously acquiring an infrared image of the solid-liquid interface;

[0047] A first analysis module for determining the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface;

[0048] A second analysis module, configured to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface;

[0049] A microscopic defect generation warning module, configured to determine the microscopic defect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient, and issue a microscopic defect generation warning when the microscopic defect generation index is greater than a preset microscopic defect generation threshold.

[0050] In a third aspect, an embodiment of the present application provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. Wherein, when the processor executes the program, it can implement the method for detecting microscopic defects of gallium oxide crystals based on image processing as described in any embodiment of the first aspect.

[0051] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the program is executed by a processor, it can implement the method for detecting microscopic defects of gallium oxide crystals based on image processing as described in any embodiment of the first aspect.

[0052] Compared with the prior art, the present application has the following advantages and beneficial effects:

[0053] The present application quantifies the morphology and stability of the solid-liquid interface of the gallium oxide crystal through the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient, determines the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface, and then determines the microscopic defect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient, improving the timeliness and reliability of detecting microscopic defects of the gallium oxide crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0055] Figure 1 It is a schematic flowchart of the method for detecting microscopic defects of gallium oxide crystals based on image processing provided by an embodiment of the present application;

[0056] Figure 2 It is a schematic flowchart of determining the thermal stress distribution coefficient in the method for detecting microscopic defects of gallium oxide crystals based on image processing provided by an embodiment of the present application;

[0057] Figure 3 This is a schematic structural diagram of a gallium oxide crystal microscopic defect detection system based on image processing provided by an embodiment of the present application;

[0058] Figure 4 This is a schematic diagram of an electronic device provided by an embodiment of the present application. Specific embodiments

[0059] The technical solution of the present application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. Without conflict, the technical features in the embodiments of the present application and the embodiments can be combined with each other.

[0060] Embodiment 1

[0061] As Figure 1 shown, the embodiment of the present application provides a method for detecting microscopic defects of gallium oxide crystals based on image processing. The method includes:

[0062] S101: Obtain a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of the gallium oxide crystal, and at the same time obtain an infrared image of the solid-liquid interface.

[0063] S102: Determine the solid-liquid interface shape coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface;

[0064] The solid-liquid interface morphologies of gallium oxide crystals generally include convex towards the melt, flat, concave towards the melt, convex towards the melt with an edge reverse groove, slightly convex towards the melt, and slightly concave towards the melt. Among them, convex towards the melt is beneficial to the growth of gallium oxide crystals, not easy to generate twins, and when twins are generated, it is also easy to generate outward twins, which has little impact on the main crystal orientation of the crystal. However, excessive convexity towards the melt is likely to lead to uneven radial stress and even internal stress accumulation, resulting in a significant increase in dislocations; the flat solid-liquid interface has fewer dislocations. It is generally believed that the flatter the solid-liquid interface, the smaller the stress on the crystal and the fewer defects in the grown crystal. However, for the growth of large-diameter gallium oxide crystals, the flatter the solid-liquid interface, the more likely the interface state is to become unstable, resulting in defects such as holes, dislocations, and inclusion crystals inside; it is not easy to maintain the crystal diameter of the crystal concave towards the melt, and it is easy to generate cavities and holes. The twins generated are likely to deviate towards the inside of the crystal, interfering with the main crystal orientation; twins are likely to be generated at the edge of the gallium oxide crystal with an edge reverse groove convex towards the melt, affecting the overall quality of the crystal; the solid-liquid interfaces slightly convex towards the melt and slightly concave towards the melt can both reduce the generation of defects such as dislocations during the growth of large-diameter crystals, and enable the crystal to have sufficient growth power. At the same time, maintaining the stability of the crystal diameter and reducing the crystal stress. Generally, the solid-liquid interface slightly convex towards the melt should be maintained during isodiametric growth, and the solid-liquid interface slightly concave towards the melt should be maintained at the end stage. The specific steps for determining the solid-liquid interface morphology coefficient include:

[0065] Obtain the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface. Taking the bottom plane of the crystal furnace as the xOy plane and the height of the solid-liquid interface as the z-axis to construct a space rectangular coordinate system, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the space rectangular coordinate system. Among them, the preset three-dimensional image of the solid-liquid interface is obtained through CGSim crystal growth simulation software. CGSim crystal growth simulation software can simulate the solid-liquid interface of the crystal growth process through a method combining the finite volume method and the finite element method, and use the optimal three-dimensional image of the solid-liquid interface obtained by simulation as the preset three-dimensional image of the solid-liquid interface;

[0066] Calculate the solid-liquid interface morphology coefficient through the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface. The calculation formula for the solid-liquid interface morphology coefficient is:

[0067] ;

[0068] In the formula represents the height value of the three-dimensional image of the solid-liquid interface at the pixel in the space rectangular coordinate system, represents the height value of the preset three-dimensional image of the solid-liquid interface at the pixel in the space rectangular coordinate system, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the x-axis, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the y-axis, represents the solid-liquid interface shape coefficient;

[0069] The stability of the solid-liquid interface is crucial for the growth of gallium oxide crystals. A stable solid-liquid interface can ensure uniform atomic packing during the growth of gallium oxide crystals, reduce the generation of defects caused by interface fluctuations, melt convection, etc., thereby improving the structural integrity, optical properties, and electrical properties of gallium oxide crystals. A highly stable solid-liquid interface helps to produce high-quality gallium oxide crystals, reduce the dislocation density, and enhance the application value of the crystals. The specific steps to determine the solid-liquid interface stability coefficient include:

[0070] Obtain the three-dimensional image of the solid-liquid interface;

[0071] Calculate the solid-liquid interface stability coefficient through the three-dimensional image of the solid-liquid interface. The calculation formula for the solid-liquid interface stability coefficient is:

[0072] ;

[0073] In the formula represents the change coefficient of the solid-liquid interface at the th monitoring time point, represents the number of monitoring time points, represents the maximum value of the change coefficient of the solid-liquid interface, represents the solid-liquid interface stability coefficient;

[0074] By comparing the height differences of each pixel point in the three-dimensional images of the solid-liquid interface at adjacent monitoring time points, the degree of change of the solid-liquid interface shape over time is quantified. Specifically, by comparing the height values of each pixel point at adjacent monitoring time points, and then normalizing through the number of pixels, the change coefficient of the solid-liquid interface is finally obtained. The larger the change coefficient of the solid-liquid interface, the more significant the change in the solid-liquid interface shape; the smaller the change coefficient of the solid-liquid interface, the more stable the solid-liquid interface shape. The calculation formula for the change coefficient of the solid-liquid interface is:

[0075] ;

[0076] In the formula represents the height value of the three-dimensional image of the solid-liquid interface at the pixel in the space rectangular coordinate system at the th monitoring time point, represents the height value of the three-dimensional image of the solid-liquid interface at the pixel in the space rectangular coordinate system at the th monitoring time point, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the space rectangular coordinate system, represents the change coefficient of the solid-liquid interface at the th monitoring time point.

[0077] S103: Determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface;

[0078] By analyzing the infrared image of the solid-liquid interface, concentric circles with different radii are constructed in sequence, and the average circumferential temperature of each concentric circle is calculated. Then, the circumferential temperature gradient at different radii is calculated, and the corresponding thermal stress is calculated using the circumferential temperature gradient. Finally, by analyzing the circumferential thermal stress on all concentric circles, its distribution uniformity is determined. The larger the thermal stress distribution coefficient, the more uneven the distribution of thermal stress, and the more likely it is to cause stress concentration inside the crystal, resulting in the generation of microdefects such as dislocations and cracks. As Figure 2 shown, the specific steps to determine the thermal stress distribution coefficient include:

[0079] Obtain the infrared image of the solid-liquid interface;

[0080] Taking the center point of the solid-liquid interface as the center, construct concentric circles with radii of in sequence. Calculate the average circumferential temperature of the concentric circle with a radius of through the infrared image of the solid-liquid interface. The formula for calculating the average circumferential temperature is:

[0081] ;

[0082] In the formula, represents the temperature value at pixel on the circumference of the concentric circle with a radius of , represents the number of pixels on the circumference of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of ;

[0083] Calculate the circumferential temperature gradient through the average circumferential temperature. The formula for calculating the circumferential temperature gradient is:

[0084] ;

[0085] In the formula, represents the average circumferential temperature of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of , represents the circumferential temperature gradient of the concentric circle with a radius of ;

[0086] Calculate the circumferential thermal stress through the circumferential temperature gradient. The formula for calculating the circumferential thermal stress is:

[0087] ;

[0088] In the formula represents the elastic modulus of the gallium oxide crystal, represents the linear thermal expansion coefficient of the gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, represents the circumferential temperature gradient of a concentric circle with a radius of , represents the circumferential thermal stress of a concentric circle with a radius of . Among them, the elastic modulus, linear thermal expansion coefficient, and Poisson's ratio of the gallium oxide crystal are obtained through the material property database;

[0089] Calculate the thermal stress distribution coefficient through the circumferential thermal stress. The calculation formula for the thermal stress distribution coefficient is:

[0090] ;

[0091] In the formula represents the circumferential thermal stress of a concentric circle with a radius of , represents the number of concentric circles, represents the thermal stress distribution coefficient.

[0092] S104: Determine the microscopic defect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. When the microscopic defect generation index is greater than the preset microscopic defect generation threshold, issue a microscopic defect generation warning;

[0093] The solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient together constitute the core indicators of the microscopic defect generation index, respectively reflecting the ideal degree of the interface morphology, the stability of the interface, and the uniformity of the thermal stress distribution during crystal growth. Specifically, the morphology coefficient clarifies the influence of the interface geometry on defect generation, the stability coefficient reflects the influence of interface fluctuations on the crystal structure, and the thermal stress distribution coefficient measures the risk of microscopic defects caused by internal stress concentration. The specific steps to determine the microscopic defect generation index of the gallium oxide crystal include:

[0094] Obtain the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient;

[0095] Calculate the microscopic defect generation index through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. The calculation formula for the microscopic defect generation index is:

[0096] ;

[0097] In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, represents the microdefect generation index.

[0098] Example 2

[0099] As Figure 3 shown, it is a schematic structural diagram of a gallium oxide crystal microdefect detection system based on image processing provided by an embodiment of the present application. The gallium oxide crystal microdefect detection system based on image processing includes:

[0100] An image acquisition module 301, configured to acquire a three-dimensional image of the solid-liquid interface in a crystal furnace during the growth of a gallium oxide crystal, and simultaneously acquire an infrared image of the solid-liquid interface;

[0101] A first analysis module 302, configured to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface;

[0102] A second analysis module 303, configured to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface;

[0103] A microdefect generation warning module 304, configured to determine the microdefect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient, and perform a microdefect generation warning when the microdefect generation index is greater than a preset microdefect generation threshold.

[0104] Specifically, the first analysis module 302 is configured to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the three-dimensional image of the solid-liquid interface. The specific steps for determining the solid-liquid interface morphology coefficient include:

[0105] Obtain the three-dimensional image of the solid-liquid interface and a preset three-dimensional image of the solid-liquid interface. Take the bottom plane of the crystal furnace as the xOy plane, and construct a space rectangular coordinate system with the height of the solid-liquid interface as the z-axis. Map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the space rectangular coordinate system. Among them, the preset three-dimensional image of the solid-liquid interface is obtained through CGSim crystal growth simulation software. The CGSim crystal growth simulation software can simulate the solid-liquid interface during the crystal growth process by combining the finite volume method and the finite element method, and use the optimal three-dimensional image of the solid-liquid interface obtained by the simulation as the preset three-dimensional image of the solid-liquid interface;

[0106] Calculate the solid-liquid interface shape coefficient from the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface. The calculation formula for the solid-liquid interface shape coefficient is:

[0107] ;

[0108] In the formula represents the height value of the three-dimensional image of the solid-liquid interface at pixel in the space rectangular coordinate system, represents the height value of the preset three-dimensional image of the solid-liquid interface at pixel in the space rectangular coordinate system, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the x-axis, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the y-axis, represents the solid-liquid interface shape coefficient;

[0109] The specific steps to determine the solid-liquid interface stability coefficient include:

[0110] Obtain the three-dimensional image of the solid-liquid interface;

[0111] Calculate the solid-liquid interface stability coefficient from the three-dimensional image of the solid-liquid interface. The calculation formula for the solid-liquid interface stability coefficient is:

[0112] ;

[0113] In the formula represents the solid-liquid interface change coefficient at the th monitoring time point, represents the number of monitoring time points, represents the maximum value of the solid-liquid interface change coefficient, represents the solid-liquid interface stability coefficient;

[0114] The calculation formula for the solid-liquid interface change coefficient is:

[0115] ;

[0116] In the formula represents the height value of the three-dimensional image of the solid-liquid interface at pixel in the space rectangular coordinate system at the th monitoring time point, represents the height value of the three-dimensional image of the solid-liquid interface at pixel in the space rectangular coordinate system at the th monitoring time point, represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane in the space rectangular coordinate system, represents the The change coefficient of the solid-liquid interface at each monitoring time point.

[0117] Specifically, the second analysis module 303 is configured to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the infrared image of the solid-liquid interface. The specific steps for determining the thermal stress distribution coefficient include:

[0118] Obtain the infrared image of the solid-liquid interface;

[0119] With the center point of the solid-liquid interface as the center, concentric circles with radii of are successively constructed. Calculate the average circumferential temperature of the concentric circle with a radius of through the infrared image of the solid-liquid interface. The formula for calculating the average circumferential temperature is:

[0120] ;

[0121] In the formula, represents the temperature value at pixel on the circumference of the concentric circle with a radius of , represents the number of pixels on the circumference of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of ;

[0122] Calculate the circumferential temperature gradient through the average circumferential temperature. The formula for calculating the circumferential temperature gradient is:

[0123] ;

[0124] In the formula, represents the average circumferential temperature of the concentric circle with a radius of , represents the average circumferential temperature of the concentric circle with a radius of , represents the circumferential temperature gradient of the concentric circle with a radius of ;

[0125] Calculate the circumferential thermal stress through the circumferential temperature gradient. The formula for calculating the circumferential thermal stress is:

[0126] ;

[0127] In the formula, represents the elastic modulus of the gallium oxide crystal, represents the linear thermal expansion coefficient of the gallium oxide crystal, represents the Poisson's ratio of the gallium oxide crystal, represents the circumferential temperature gradient of the concentric circle with a radius of , Represents the circumferential thermal stress of concentric circles with a radius of , where the elastic modulus, linear thermal expansion coefficient, and Poisson's ratio of the gallium oxide crystal are obtained from the material property database;

[0128] Calculate the thermal stress distribution coefficient through the circumferential thermal stress, and the calculation formula for the thermal stress distribution coefficient is:

[0129] ;

[0130] In the formula Represents the circumferential thermal stress of concentric circles with a radius of , Represents the number of concentric circles, Represents the thermal stress distribution coefficient.

[0131] Specifically, the microdefect generation warning module 304 is used to determine the microdefect generation index of the gallium oxide crystal through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. When the microdefect generation index is greater than the preset microdefect generation threshold, a microdefect generation warning is issued. The specific steps for determining the microdefect generation index of the gallium oxide crystal include:

[0132] Obtain the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient;

[0133] Calculate the microdefect generation index through the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient, and the thermal stress distribution coefficient. The calculation formula for the microdefect generation index is:

[0134] ;

[0135] In the formula Represents the solid-liquid interface morphology coefficient, Represents the solid-liquid interface stability coefficient, Represents the thermal stress distribution coefficient, Represents the solid-liquid interface morphology weight, Represents the solid-liquid interface stability weight, Represents the thermal stress distribution weight, Represents the microdefect generation index.

[0136] For the parameters and the steps of each unit module in the gallium oxide crystal microdefect detection system based on image processing provided in the embodiments of the present application to achieve corresponding functions, reference can be made to the parameters and steps in the embodiments of the gallium oxide crystal microdefect detection method based on image processing in the above text, which will not be elaborated here.

[0137] Such as Figure 4As shown, an electronic device 400 provided by an embodiment of the present application includes: a memory 401, a processor 402, and a computer program stored on the memory 401 and executable on the processor 402. When the processor 402 reads the program from the memory 401 through a bus 403 and executes the program, it can implement the method of any embodiment included in the above-mentioned method for detecting microscopic defects of gallium oxide crystals based on image processing.

[0138] The processor 402 can process digital signals and can include various computing architectures, such as a complex instruction set computer architecture, a reduced instruction set computer architecture, or an architecture that implements a combination of multiple instruction sets.

[0139] The memory 401 can be used to store instructions executed by the processor 402 or data related to the execution of the instructions. These instructions and / or data can include code for implementing some or all of the functions of one or more modules described in the embodiments of the present application. The processor 402 of the embodiments of the present disclosure can be used to execute the instructions in the memory 401 to implement the method shown above. The memory 401 includes a dynamic random access memory, a static random access memory, a flash memory, an optical memory, or other memories well-known to those skilled in the art.

[0140] An embodiment of the present application proposes a computer-readable storage medium, on which a rewritable computer program is stored; when the computer program runs on a computer device, the computer device is caused to execute the above-mentioned method for detecting microscopic defects of gallium oxide crystals based on image processing.

[0141] For example, the computer-readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc read-only memory (CD-ROM), a magnetic tape, a floppy disk, and an optical data storage device, etc.

Claims

1. A method for detecting microscopic defects of gallium oxide crystals based on image processing, characterized in that: The steps include: Acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; Determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The thermal stress distribution coefficient of the gallium oxide crystal is determined by analyzing the infrared image of the solid-liquid interface; The micro defect generation index of the gallium oxide crystal is determined by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and a micro defect generation warning is performed when the micro defect generation index is greater than a preset micro defect generation threshold.

2. The gallium oxide crystal micro defect detection method based on image processing according to claim 1, characterized in that: The specific steps of determining the solid-liquid interface morphology coefficient include: Acquire the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface, construct a spatial rectangular coordinate system with the bottom plane of the crystal furnace as the xOy plane and the height of the solid-liquid interface as the z-axis, and map the three-dimensional image of the solid-liquid interface and the preset three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system; The solid-liquid interface morphology coefficient is calculated by the solid-liquid interface three-dimensional image and the preset solid-liquid interface three-dimensional image. The solid-liquid interface morphology coefficient calculation formula is: ； In the formula Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at Represents the three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system in pixels The height value at represents the number of pixels on the x-axis of the three-dimensional image of the solid-liquid interface, Represents the number of pixels on the y-axis of the three-dimensional image of the solid-liquid interface, Represents the solid-liquid interface morphology coefficient.

3. The method for detecting microscopic defects of gallium oxide crystals based on image processing according to claim 2, characterized in that: The specific steps of determining the solid-liquid interface stability coefficient include: Acquire the three-dimensional image of the solid-liquid interface, and map the three-dimensional image of the solid-liquid interface to the spatial rectangular coordinate system; The solid-liquid interface stability coefficient is calculated by the solid-liquid interface three-dimensional image, and the solid-liquid interface stability coefficient calculation formula is: ； In the formula Indicates The solid-liquid interface variation coefficient at each monitoring time point is represents the number of monitoring time points, represents the maximum value of the solid-liquid interface variation coefficient, Represents the solid-liquid interface stability coefficient.

4. The gallium oxide crystal micro defect detection method based on image processing according to claim 3 is characterized in that: The calculation formula of the solid-liquid interface variation coefficient is: ； In the formula Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Indicates The three-dimensional image of the solid-liquid interface in the spatial rectangular coordinate system at the monitoring time point is pixel The height value at Represents the number of pixels of the three-dimensional image of the solid-liquid interface on the xOy plane of the spatial rectangular coordinate system, Indicates The coefficient of change of the solid-liquid interface at each monitoring time point.

5. The gallium oxide crystal micro defect detection method based on image processing according to claim 1, characterized in that: The specific steps of determining the thermal stress distribution coefficient include: Acquiring an infrared image of the solid-liquid interface; The center point of the solid-liquid interface Construct a circle with a radius of The concentric circles with a radius calculated through the solid-liquid interface infrared image are The mean circumferential temperature of the concentric circles; The circumferential temperature gradient is calculated by the circumferential temperature mean value, and the circumferential temperature gradient calculation formula is: ； In the formula The radius is The mean circumferential temperature of the concentric circles is The radius is The mean circumferential temperature of the concentric circles is The radius is Circumferential temperature gradient of concentric circles; The circumferential thermal stress is calculated by the circumferential temperature gradient, and the circumferential thermal stress calculation formula is: ； In the formula represents the elastic modulus of the crystal, represents the linear thermal expansion coefficient of the crystal, represents the Poisson's ratio of the crystal, The radius is The circumferential temperature gradient of the concentric circles, The radius is Circumferential thermal stress of concentric circles; The thermal stress distribution coefficient is calculated by the circumferential thermal stress, and the thermal stress distribution coefficient calculation formula is: ； In the formula The radius is The circumferential thermal stress of the concentric circles, represents the number of concentric circles, Represents the thermal stress distribution coefficient.

6. The gallium oxide crystal micro defect detection method based on image processing according to claim 1, characterized in that: The specific steps of determining the micro defect generation index of the gallium oxide crystal include: Obtaining the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient; The micro defect generation index is calculated by the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient. The micro defect generation index calculation formula is: ； In the formula represents the solid-liquid interface morphology coefficient, represents the solid-liquid interface stability coefficient, represents the thermal stress distribution coefficient, represents the solid-liquid interface morphology weight, represents the solid-liquid interface stability weight, represents the thermal stress distribution weight, Represents the micro defect generation index.

7. A gallium oxide crystal micro defect detection system based on image processing, which is implemented based on the gallium oxide crystal micro defect detection method based on image processing according to any one of claims 1 to 6, characterized in that: The system comprises: An image acquisition module is used to acquire a three-dimensional image of the solid-liquid interface in the crystal furnace during the growth of gallium oxide crystals, and simultaneously acquire an infrared image of the solid-liquid interface; A first analysis module is used to determine the solid-liquid interface morphology coefficient and the solid-liquid interface stability coefficient of the gallium oxide crystal by analyzing the solid-liquid interface three-dimensional image; The second analysis module is used to determine the thermal stress distribution coefficient of the gallium oxide crystal by analyzing the solid-liquid interface infrared image; The micro defect generation warning module is used to determine the micro defect generation index of the gallium oxide crystal by using the solid-liquid interface morphology coefficient, the solid-liquid interface stability coefficient and the thermal stress distribution coefficient, and to issue a micro defect generation warning when the micro defect generation index is greater than a preset micro defect generation threshold.

8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the gallium oxide crystal micro defect detection method based on image processing according to any one of claims 1 to 6 by calling the computer program stored in the memory.

9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are executed on a computer, the computer is caused to execute the gallium oxide crystal micro defect detection method based on image processing as described in any one of claims 1 to 6.

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