A control and protection method for preventing IGBT from appearing through fault and related device

Abstract

The application discloses a control and protection method for preventing IGBT from appearing shoot-through failure and related devices, first, the fault cause, fault result, treatment measure and treatment result of T1 reporting shoot-through failure are analyzed and summarized to obtain the summary information of the shoot-through failure cause of T1 reporting; then, after the treatment measure of T1 reporting shoot-through failure is completed, the summary information is combined with the feedback information after T2 conduction and corresponding fault logic processing scheme to obtain the logic processing scheme of T1 reporting shoot-through failure, finally, the logic processing scheme of T1 shoot-through failure is designed into a module control board, so that the shoot-through failure of IGBT is controlled and protected. The control and protection method designed in the application realizes accurate fault positioning and fault removal after the shoot-through failure of the half-bridge power module, and the original board card of the converter valve power module is used without the need of redesigning the hardware, so that the control and protection of the sudden shoot-through failure of IGBT are provided, and the development is simple and the period is short.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular to a control and protection method and related device for preventing IGBT shoot-through faults. Background Technology

[0002] Insulated-gate bipolar transistors (IGBTs), as crucial power switching devices, are widely used in power systems. However, operating under harsh environments such as high temperature and high pressure for extended periods, IGBTs are highly susceptible to voltage surges, overcurrents, and other factors that can cause malfunctions. IGBT failure costs account for approximately 80% of the cost of power electronic systems. Therefore, in-depth research on IGBT control and protection is urgently needed to improve system reliability and safety. IGBT failures are generally classified into two types: aging failures and sudden failures. However, there are few relevant technologies for the control and protection of sudden failures, especially sudden shoot-through failures. Therefore, there is an urgent need to design a control and protection technology to prevent IGBT shoot-through failures. Summary of the Invention

[0003] This application provides a control and protection method and related device for preventing IGBT shoot-through failures, which is used to provide control and protection for sudden shoot-through failures of IGBTs, and is simple to develop and has a short cycle.

[0004] In view of this, the first aspect of this application provides a control and protection method for preventing IGBT shoot-through faults, which is applied in a flexible power transmission converter valve. The flexible power transmission converter valve includes: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes: T1 and T2.

[0005] The method includes:

[0006] S1. Analyze and summarize the cause, result, handling measures and results of the T1 direct-through fault to obtain summary information of the cause of the T1 direct-through fault, wherein the handling measures include: connecting T2;

[0007] S2. After the processing measures for the T1 direct-through fault are completed, the summary information and the feedback information after the T2 is turned on and the corresponding fault logic processing scheme are summarized to obtain the T1 direct-through fault logic processing scheme. The feedback information includes: reporting a direct-through fault, reporting a drive undervoltage alarm, no response, and normal response signal.

[0008] S3. The T1 shoot-through fault logic processing scheme is designed into the module control board to protect the IGBT from shoot-through faults.

[0009] Optionally, when the feedback information is a reported pass-through fault, the fault logic processing scheme includes:

[0010] T2 remains on.

[0011] If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command will be executed when the voltage of the half-bridge power module drops to no more than 500V.

[0012] If there is no shoot-through fault during the conduction of T2, the bypass switch closing command is executed when the voltage rise of the half-bridge power module within the preset voltage duration is no greater than 8V.

[0013] If the voltage of the half-bridge power module rises by more than 8V within the preset time period, then wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0014] Optionally, when the feedback information is the low-voltage alarm, the logic processing scheme includes:

[0015] Control the half-bridge power module to lock out for a preset time; if the undervoltage alarm disappears after the preset time and there is no fault during the T2 conduction preset time, then control the half-bridge power module to execute the valve control command; if the driver of T2 is reported to be faulty after the preset time, then continue to conduct T2.

[0016] If a shoot-through fault occurs during the conduction of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V before executing the bypass switch closing command;

[0017] If there is no shoot-through fault during the conduction of T2, and the voltage rise is not greater than 8V within the voltage preset time of the half-bridge power module, then the bypass switch closing command is executed.

[0018] If the voltage rise of the half-bridge power module exceeds 8V within the preset voltage period, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0019] Optionally, when the feedback information is no response, the logical processing scheme includes:

[0020] If the voltage rise of the half-bridge power module is greater than 8V during the preset duration, T2 will continue to be turned on, and the voltage rise of the half-bridge power module will be less than 8V during the preset duration. After the preset duration ends, the half-bridge power module will be controlled to execute the valve control command.

[0021] If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command is executed when the voltage of the half-bridge power module drops to no more than 500V.

[0022] If there is no shoot-through fault during the conduction period of T2, and the voltage rise of the half-bridge power module is not greater than 8V within the preset voltage duration, the bypass switch closing command is executed.

[0023] If the voltage rise of the half-bridge power module exceeds 8V within the preset voltage period, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0024] Optionally, when the feedback information indicates that the response signal is normal, the logic processing scheme includes:

[0025] The T2 is controlled for a preset conduction time. If no fault is reported during the preset time, the half-bridge power module executes a valve control command.

[0026] Optionally, step S1 may be preceded by:

[0027] The module control board sends a drive signal to the IGBT driver board, which then responds to the drive signal and sends back the optical signal from the IGBT to the module control board. The module control board then determines the state of the IGBT based on the optical signal.

[0028] Optionally, the causes of the failure include: bypass switch discharge, T2 false triggering, and damage to the driver or IGBT of T1.

[0029] The second aspect of this application provides a control and protection system to prevent IGBT shoot-through faults. The system is applied in a flexible power transmission converter valve. The flexible power transmission converter valve includes: a module control board, a power module, and an IGBT drive board. The power module is a half-bridge power module, which includes: T1 and T2.

[0030] The system includes:

[0031] The first analysis unit is used to analyze and summarize the fault cause, fault result, handling measures and handling results of the T1 reported direct connection fault, and obtain the summary information of the fault cause of the T1 reported direct connection fault, wherein the handling measures include: connecting the T2;

[0032] The second analysis unit is used to summarize the T1 direct-through fault logic processing scheme by combining the summary information with the feedback information after T2 is turned on and the corresponding fault logic processing scheme after the processing measures for the T1 direct-through fault are completed. The feedback information includes: direct-through fault, drive undervoltage alarm, no response and normal response signal.

[0033] The control unit is used to incorporate the T1 shoot-through fault logic processing scheme into the module control board, thereby protecting the IGBT from shoot-through faults.

[0034] A third aspect of this application provides a computer device for preventing IGBT shoot-through failures, the device comprising a processor and a memory:

[0035] The memory is used to store program code and transmit the program code to the processor;

[0036] The processor is configured to execute, according to the instructions in the program code, the steps of the protection method for preventing IGBT shoot-through faults as described in the first aspect above.

[0037] A fourth aspect of this application provides a computer-readable storage medium for storing program code for executing the control and protection method for preventing IGBT shoot-through faults as described in the first aspect.

[0038] As can be seen from the above technical solutions, this application has the following advantages:

[0039] This application provides a protection method to prevent IGBT shoot-through faults. First, the causes, results, handling measures, and results of a shoot-through fault reported by IGBT T1 are analyzed and summarized to obtain a summary of the causes of the shoot-through fault. Then, after the handling measures for the shoot-through fault of IGBT T1 are completed, the summary information is combined with the feedback information after T2 conducts and the corresponding fault logic handling scheme to obtain a logic handling scheme for the shoot-through fault of IGBT T1. Finally, the logic handling scheme for the shoot-through fault of IGBT T1 is designed into the module control board, thereby providing protection against IGBT shoot-through faults. The protection method designed in this application can eliminate false alarms after a shoot-through fault occurs in the half-bridge power module, achieving accurate fault location and resolution. Moreover, it uses the existing board of the converter valve power module, eliminating the need for hardware redesign. Only the shoot-through fault handling logic needs to be added to the software. Furthermore, the shoot-through fault handling logic designed in this application adds self-rescue logic to the general bypass logic to prevent false alarms from causing the half-bridge power module to bypass. This provides control and protection for sudden shoot-through failures of IGBTs, and the development is simple and quick. Attached Figure Description

[0040] Figure 1 This is a flowchart illustrating a control and protection method for preventing IGBT shoot-through faults provided in an embodiment of this application.

[0041] Figure 2 This is the half-bridge power module topology provided in the embodiments of this application;

[0042] Figure 3 This is a circuit diagram of the IGBT shoot-through fault handling measures provided in the embodiments of this application under bypass switch discharge;

[0043] Figure 4 This is a topology diagram of the fault loop of the half-bridge power module provided in the embodiments of this application;

[0044] Figure 5 This is a schematic diagram of a damaged half-bridge power module T1 provided in the embodiments of this application;

[0045] Figure 6 This is a schematic diagram of a control and protection system for preventing IGBT shoot-through faults provided in an embodiment of this application. Detailed Implementation

[0046] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0047] The following is a summary of the scheme in this application:

[0048] In the power module of the flexible power transmission converter valve, the module control board sends drive signals to the IGBT driver board, and the IGBT driver board feeds back signals indicating whether the IGBT is on or off to the module control board. When the IGBT is operating normally, the CPLD (Programmable Logic Device) of the module control board receives a "light present" (low level) signal from the IGBT driver board. When the CPLD detects a "no light" (high level) signal from the IGBT driver board, the power module reports an IGBT single-pass alarm.

[0049] If an IGBT experiences a single short circuit, the power module will treat it as an alarm and latch the fault information. At the same time, the power module will perform a soft bypass self-rescue procedure. If the self-rescue is successful, the power module will operate normally. If the self-rescue fails, the power module will be treated as a level two fault, the power module will be locked, the fault information will be latched, and the bypass strategy will be implemented for self-bypass.

[0050] Please see Figure 1 The present application provides a control and protection method for preventing IGBT shoot-through faults, which is applied to a flexible power transmission converter valve. The flexible power transmission converter valve includes a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes T1 and T2.

[0051] It should be noted that half-bridge power modules, such as Figure 2 As shown in the figure, T1 and T2 are insulated gate bipolar transistors (IGBTs).

[0052] The methods include:

[0053] In one embodiment, the method further includes the following steps prior to step 101:

[0054] The module control board sends a drive signal to the IGBT driver board, which then responds to the drive signal and sends the optical signal from the IGBT back to the module control board. The module control board then determines the state of the IGBT based on the optical signal.

[0055] It should be noted that this step is as described in the above scheme overview and will not be repeated here.

[0056] Step 101: Analyze and summarize the cause, result, handling measures and results of the T1 direct-through fault to obtain the summary information of the cause of the T1 direct-through fault. The handling measures include: turn on T2.

[0057] Step 102: After the handling measures for the T1 direct fault are completed, the summary information and the feedback information after the T2 is turned on and the corresponding fault logic handling scheme are summarized to obtain the T1 direct fault logic handling scheme. The feedback information includes: direct fault, undervoltage alarm, no response and normal response signal.

[0058] Step 103: Design the T1 shoot-through fault logic processing scheme into the module control board, thereby controlling and protecting the IGBT from shoot-through faults.

[0059] It should be noted that this application can use the existing board of the converter valve power module without redesigning the hardware. Only the shoot-through fault handling logic needs to be added to the software. In other words, the T1 shoot-through fault handling logic scheme obtained in this application is directly designed into the module control board, thereby providing shoot-through fault protection for the IGBT.

[0060] In one embodiment, the causes of failure in step 101 include: bypass switch discharge, T2 false triggering, or damage to the driver or IGBT of T1.

[0061] It should be noted that, regarding the T1 shoot-through fault, the inventors, through analysis, determined that the main causes of the T1 shoot-through fault are as follows: bypass switch discharge, T2 false triggering before T1 is turned on, T1 drive failure or IGBT device failure, and interference before T1 is turned on causing T2 false triggering. The following is the inventors' analysis and summary of these causes, among which:

[0062] 1) Bypass switch discharge:

[0063] Before T1 is turned on, the bypass switch discharges. After T1 is turned on, a shoot-through occurs, and T1 reports a shoot-through fault. Figure 3 As shown in loop 1, Figure 3The topology of the left part of the diagram.

[0064] a) If T1 is not damaged after a direct-through fault is reported, and the bypass switch remains in a discharging state, the bridge arm current will flow through the bypass switch to form a current as follows: Figure 3 As shown in loop 2, Figure 3 The topology of the right part of the diagram.

[0065] b) If T1 fails, the capacitor will discharge through T1 and the bypass switch, causing a sharp drop in capacitor voltage. Simultaneously, T2 will fail, and the half-bridge power module will report an undervoltage fault. The fault analysis and summary are shown in Table 1.

[0066] Table 1 shows the processing logic that the half-bridge power module can execute after the bypass switch discharges:

[0067]

[0068] 2) T2 is falsely triggered before T1 is turned on:

[0069] a) The T2 driver board is damaged or malfunctioning;

[0070] If the T2 driver board is damaged before T1 is triggered and conduction begins, the T2 driver will continuously output a high level, causing T2 to remain in a conducting state for an extended period. After T1 is triggered, a short circuit will occur due to the shoot-through between the upper and lower transistors. T2 experiences a Class II short circuit, making it difficult to report the fault, but T2 is easily damaged. T1 can report a shoot-through fault, as shown in the diagram. Figure 4 As shown.

[0071] b) T2 is damaged;

[0072] If T2 fails, a direct-through fault will be reported regardless of how many times T1 is activated. However, at this time, the bus voltage will continue to drop, the port voltage will be zero, and the bypass switch can be closed directly. The fault analysis and summary are shown in Table 2.

[0073] The executable processing logic of the half-bridge power module is as follows: Table 2 shows the following:

[0074]

[0075] 3) T1 driver or IGBT device failure:

[0076] A diagram illustrating damage to T1 itself or the T1 driver is shown below. Figure 5 As shown, for T1 itself and T1 driver failure, there are three possible combinations:

[0077] a) The T1 driver is damaged, but the IGBT (T1 itself) is not damaged;

[0078] If the T1 driver is damaged and reports a shoot-through fault, but the IGBT is not damaged, the IGBT will not conduct.

[0079] If the IGBT turn-on signal can be sent, then the latch-up signal can also be sent after a shoot-through signal is detected. Therefore, after T1 reports a shoot-through fault, the IGBT is in a latched state.

[0080] b) The T1 driver is not damaged, but T1 itself is damaged;

[0081] If the driver is not damaged but the IGBT is damaged, the damage is considered to be a short circuit. After communicating with device and driver manufacturers such as ABB, Infineon, CRRC, and PI, it was found that if the IGBT is short-circuited and shot-through, the driver will also be damaged. Therefore, it can be considered that there is no situation where the IGBT is damaged by a short circuit and the driver is not damaged.

[0082] c) Both the T1 driver and the IGBT are damaged;

[0083] The module control board was unable to determine the status of T1, and based on the fault feedback signal, it locked out the half-bridge power module. The fault analysis and summary are shown in Table 3.

[0084] Table 3. T1 Driver or IGBT Fault Handling Logic:

[0085]

[0086] 4) Interference before T1 is turned on causes T2 to be falsely triggered:

[0087] It should be noted that the false triggering was caused by interference.

[0088] a) The interference time is very short and will not cause the IGBT to saturate and conduct, ultimately resulting in a straight-through between the upper and lower transistors, thus eliminating the possibility of interference.

[0089] b) If interference causes T2 to remain on for an extended period, then turning T2 back on after locking the module will not report a fault, and the half-bridge power module will successfully self-rescue.

[0090] The solution for the above four faults is to turn on T2.

[0091] The following is a summary of the four causes of the above-mentioned failures, as shown in Table 4:

[0092] Table 4

[0093]

[0094] It should be noted that the T2 false triggering in Table 4 includes the above two situations: T2 false triggering before T1 is turned on and T2 false triggering caused by interference before T1 is turned on.

[0095] In one embodiment, the feedback information and corresponding fault logic handling scheme in step 102 include:

[0096] 1) When the feedback information is a direct-through fault, the fault logic processing scheme includes:

[0097] T2 remains on.

[0098] If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command will be executed when the voltage of the half-bridge power module drops to no more than 500V.

[0099] If there is no shoot-through fault during the conduction of T2, the bypass switch closing command is executed when the voltage rise of the half-bridge power module within 10ms is no greater than 8V.

[0100] If the voltage of the half-bridge power module rises by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0101] 2) When the feedback information is the reported undervoltage alarm, the logical processing scheme includes:

[0102] The half-bridge power module is locked for 300us; if the undervoltage alarm disappears after 300us and there is no fault during the 20ms of T2 being turned on, the half-bridge power module is controlled to execute the valve control command; if a driver fault of T2 is reported after 300us, T2 is turned on continuously.

[0103] If a shoot-through fault occurs during the conduction of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V before executing the bypass switch closing command;

[0104] If there is no shoot-through fault during the conduction of T2, and the voltage rise of the half-bridge power module is no greater than 8V within 10ms, then the bypass switch closing command is executed.

[0105] If the voltage of the half-bridge power module rises by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0106] 3) When the feedback information is no response, the logical processing scheme includes:

[0107] If the voltage rise of the half-bridge power module is greater than 8V during 20ms, then T2 will continue to be turned on, and the voltage rise of the half-bridge power module will be less than 8V during 20ms. After 20ms, the half-bridge power module will be controlled to execute the valve control command.

[0108] If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command is executed when the voltage of the half-bridge power module drops to no more than 500V.

[0109] If there is no shoot-through fault during the conduction of T2, the bypass switch closing command is executed when the voltage rise of the half-bridge power module is no greater than 8V within 10ms.

[0110] If the voltage of the half-bridge power module rises by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

[0111] 4) When the feedback information indicates that the response signal is normal, the logic processing scheme includes:

[0112] The T2 is controlled to be turned on for 20ms. If no fault is reported during the 20ms period, the half-bridge power module executes the valve control command.

[0113] It should be noted that, by combining the summarized information with the feedback information after T2 is turned on and the corresponding fault logic handling scheme, the logic handling scheme for T1 reporting a direct-through fault is obtained, as shown in Table 5. It can be understood that when T1 reports a direct-through fault, the various causes leading to the T1 direct-through fault are analyzed. The unified exit logic measure is to turn on T2. ​​The feedback information after T2 is turned on and the logic handling scheme are summarized, as shown in Table 5.

[0114] Table 5. T1 Straight-through Fault Logic Handling Scheme

[0115]

[0116] It should be noted that valve control commands refer to the collective term for commands issued by the valve control system to the power module. Specific valve control commands include unlocking / locking, resetting, and stopping for charging, among others.

[0117] It should be noted that the definition of continuous conduction T2 in this application is explained as follows:

[0118] If a shoot-through fault occurs during the conduction of T2, the half-bridge power module will be locked for 100us and then T2 will be turned on again (pulse level).

[0119] If an undervoltage alarm occurs during the conduction of T2, the half-bridge power module will be locked for 300us, reporting an undervoltage fault, and maintaining T2 conduction (long-term low level).

[0120] If a no-response fault occurs during the conduction of T2, no action is taken, and T2 remains on (long-term low level).

[0121] If T2 is turned on and there is a response, T2 will remain on (long-term low level).

[0122] The inventors discovered through analysis that there are two main reasons for T2 reporting a shoot-through fault: T1 short-circuit damage and T2 driver failure causing a false alarm.

[0123] 1) T1 is short-circuited and damaged;

[0124] If T1 is damaged before T2 is turned on, a short circuit will occur after T2 is turned on, and T2 will be protected against short circuit.

[0125] 2) T2 driver malfunction false alarm;

[0126] When T2 is turned on, the driver falsely reports an IGBT shoot-through fault, even though the IGBT is not actually shoot-through. If the driver suffers irreversible damage, turning T2 on again will still report the fault, and the half-bridge power module will no longer be able to operate and must be shut down. However, this presents a problem: no matter how many commands T2 sends, it will still report a shoot-through fault. A summary is shown in Table 6:

[0127] Table 6

[0128]

[0129] In summary, shoot-through faults are a common type of fault in half-bridge power modules. To prevent false alarms that could cause the half-bridge power module to bypass, self-rescue and self-test logics have been incorporated into the shoot-through fault handling logic. The half-bridge power module fault handling logic after a T1 or T2 shoot-through fault occurs is as follows:

[0130] If the bypass switch feedback indicates that the circuit is open, then the self-rescue logic is executed;

[0131] 1) If the self-rescue is successful, execute the self-check logic;

[0132] a) If the self-test is successful, continue to accept valve control commands;

[0133] b) If the self-check fails, execute the bypass logic;

[0134] 2) If self-rescue fails, then execute the bypass logic.

[0135] If the bypass switch feedback is in the closed state, then the bypass logic is executed.

[0136] This application provides a protection method to prevent IGBT shoot-through faults. First, the causes, results, handling measures, and results of a shoot-through fault reported by IGBT T1 are analyzed and summarized to obtain a summary of the causes of the shoot-through fault. Then, after the handling measures for the shoot-through fault of IGBT T1 are completed, the summary information is combined with the feedback information after T2 conducts and the corresponding fault logic handling scheme to obtain a logic handling scheme for the shoot-through fault of IGBT T1. Finally, the logic handling scheme for the shoot-through fault of IGBT T1 is designed into the module control board, thereby providing protection against IGBT shoot-through faults. The protection method designed in this application can eliminate false alarms after a shoot-through fault occurs in the half-bridge power module, achieving accurate fault location and resolution. Moreover, it uses the existing board of the converter valve power module, eliminating the need for hardware redesign. Only the shoot-through fault handling logic needs to be added to the software. Furthermore, the shoot-through fault handling logic designed in this application adds self-rescue logic to the general bypass logic to prevent false alarms from causing the half-bridge power module to bypass. This provides control and protection for sudden shoot-through failures of IGBTs, and the development is simple and quick.

[0137] The above is a control and protection method for preventing IGBT shoot-through faults provided in the embodiments of this application. The following is a control and protection system for preventing IGBT shoot-through faults provided in the embodiments of this application.

[0138] Please see Figure 6 The present application provides a control and protection system for preventing IGBT shoot-through faults, which is applied in a flexible power transmission converter valve. The flexible power transmission converter valve includes: a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes: T1 and T2.

[0139] The system includes:

[0140] The first analysis unit 201 is used to analyze and summarize the fault cause, fault result, handling measures and handling results of T1 reporting a direct-through fault, and obtain the summary information of the fault cause of T1 reporting a direct-through fault, wherein the handling measures include: turning on T2.

[0141] The second analysis unit 202 is used to summarize the information and feedback information after T2 is turned on, as well as the corresponding fault logic processing scheme, after the processing measures for T1 reporting a shoot-through fault are completed, to obtain the logic processing scheme for T1 reporting a shoot-through fault. The feedback information includes: reporting a shoot-through fault, reporting a drive undervoltage alarm, no response, and a normal response signal.

[0142] The control unit 203 is used to design the T1 shoot-through fault logic processing scheme into the module control board, thereby controlling and protecting the IGBT during shoot-through faults.

[0143] Furthermore, this application embodiment also provides a computer device for preventing IGBT shoot-through failures, the device including a processor and a memory:

[0144] The memory is used to store program code and transmit the program code to the processor;

[0145] The processor is used to execute the steps of the control and protection method for preventing IGBT shoot-through faults as described in the above method embodiments, according to the instructions in the program code.

[0146] Furthermore, this application embodiment also provides a computer-readable storage medium for storing program code, which is used to execute the control and protection method for preventing IGBT shoot-through faults as described in the above method embodiment.

[0147] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0148] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0149] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0150] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.

[0151] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0152] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0153] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes: USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media capable of storing program code.

[0154] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A control and protection method for preventing IGBT shoot-through faults, characterized in that, The flexible power transmission converter valve is used in a flexible power transmission converter valve, which includes a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes T1 and T2. The methods include: S1. Analyze and summarize the cause, result, handling measures and results of the T1 direct-through fault to obtain summary information of the cause of the T1 direct-through fault, wherein the handling measures include: connecting T2; S2. After the processing measures for the T1 direct-through fault are completed, the summary information and the feedback information after the T2 is turned on and the corresponding fault logic processing scheme are summarized to obtain the T1 direct-through fault logic processing scheme. The feedback information includes: reporting a direct-through fault, reporting a drive undervoltage alarm, no response, and normal response signal. S3. The T1 shoot-through fault logic processing scheme is designed into the module control board to protect the IGBT from shoot-through faults. When the feedback information indicates a direct connection fault, the fault logic processing scheme includes: T2 remains on. If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command will be executed when the voltage of the half-bridge power module drops to no more than 500V. If there is no shoot-through fault during the conduction of T2, the bypass switch closing command is executed when the voltage rise of the half-bridge power module within the preset voltage duration is no greater than 8V. If the voltage of the half-bridge power module rises by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

2. The control and protection method for preventing IGBT shoot-through faults according to claim 1, characterized in that, When the feedback information is the driver undervoltage alarm, the logical processing scheme includes: Control the half-bridge power module to lock out for 300us; if the undervoltage alarm disappears after the preset time and there is no fault during the preset time of T2 conduction, control the half-bridge power module to execute the valve control command; if the driver of T2 is reported to be faulty after the preset time, then continue to conduct T2. If a shoot-through fault occurs during the conduction of T2, wait for the voltage of the half-bridge power module to drop to less than or equal to 500V before executing the bypass switch closing command; If there is no shoot-through fault during the conduction of T2, and the voltage rise is no greater than 8V within the voltage preset time of the half-bridge power module, then the bypass switch closing command is executed. If the voltage rise of the half-bridge power module exceeds 8V within the preset voltage period, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

3. The control and protection method for preventing IGBT shoot-through faults according to claim 1, characterized in that, When the feedback information is no response, the logical processing scheme includes: If the voltage rise of the half-bridge power module is greater than 8V during the preset duration, T2 will continue to be turned on, and the voltage rise of the half-bridge power module will be less than 8V during the preset duration. After the preset duration ends, the half-bridge power module will be controlled to execute the valve control command. If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command is executed when the voltage of the half-bridge power module drops to no more than 500V. If there is no shoot-through fault during the conduction of T2, and the voltage rise of the half-bridge power module is not greater than 8V within the preset voltage duration, the bypass switch closing command is executed. If the voltage rise of the half-bridge power module exceeds 8V within the preset voltage period, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

4. The control and protection method for preventing IGBT shoot-through faults according to claim 1, characterized in that, When the feedback information indicates that the response signal is normal, the logic processing scheme includes: The T2 is controlled for a preset conduction time. If no fault is reported during the preset time, the half-bridge power module executes a valve control command.

5. The control and protection method for preventing IGBT shoot-through faults according to claim 1, characterized in that, Step S1, which also includes the following: The module control board sends a drive signal to the IGBT driver board, which then responds to the drive signal and sends back the optical signal from the IGBT to the module control board. The module control board then determines the state of the IGBT based on the optical signal.

6. The control and protection method for preventing IGBT shoot-through faults according to claim 1, characterized in that, The causes of the fault include: bypass switch discharge, T2 being falsely triggered, and the driver or IGBT of T1 being damaged.

7. A control and protection system for preventing IGBT shoot-through faults, characterized in that, The flexible power transmission converter valve is used in a flexible power transmission converter valve, which includes a module control board, a power module and an IGBT drive board, wherein the power module is a half-bridge power module, and the half-bridge power module includes T1 and T2. The system includes: The first analysis unit is used to analyze and summarize the fault cause, fault result, handling measures and handling results of the T1 reported direct connection fault, and obtain the summary information of the fault cause of the T1 reported direct connection fault, wherein the handling measures include: connecting the T2; The second analysis unit is used to summarize the T1 direct-through fault logic processing scheme by combining the summary information with the feedback information after T2 is turned on and the corresponding fault logic processing scheme after the processing measures for the T1 direct-through fault are completed. The feedback information includes: direct-through fault, drive undervoltage alarm, no response and normal response signal. The control unit is used to incorporate the T1 shoot-through fault logic processing scheme into the module control board, thereby protecting the IGBT from shoot-through faults. When the feedback information indicates a direct connection fault, the fault logic processing scheme includes: T2 remains on. If a shoot-through fault occurs during the conduction of T2, the bypass switch closing command will be executed when the voltage of the half-bridge power module drops to no more than 500V. If there is no shoot-through fault during the conduction of T2, the bypass switch closing command is executed when the voltage rise of the half-bridge power module within the preset voltage duration is no greater than 8V. If the voltage of the half-bridge power module rises by more than 8V within 10ms, wait for the voltage of the half-bridge power module to drop to no more than 500V before executing the bypass switch closing command.

8. A computer device for preventing IGBT shoot-through failures, characterized in that, The device includes a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the control and protection method for preventing IGBT shoot-through faults as described in any one of claims 1-6 according to the instructions in the program code.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium is used to store program code for executing the control and protection method for preventing IGBT shoot-through faults as described in any one of claims 1-6.

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