Thin film device for inhibiting signal crosstalk between pixels, photosensitive device and display device

Abstract

The invention discloses a thin film device for inhibiting signal crosstalk between pixels, a photosensitive device and a display device, and the thin film device comprises a bottom metal electrode array and a metal compound semiconductor thin film array which are formed by carrying out the single photoetching patterning processing of a bottom metal electrode layer and a metal compound semiconductor thin film layer which are disposed on a backboard. The continuous / non-patterned active layer, the continuous / non-patterned upper charge transfer layer, the continuous / non-patterned top metal electrode layer and the continuous / non-patterned transparent packaging layer are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top; wherein the metal compound semiconductor film covers the upper surface of the bottom metal electrode; the compact and pinhole-free metal compound film is formed by carrying out surface chemical reaction on the side surface of the bottom metal electrode; the metal compound film serves as a pixel isolation structure to wrap the whole side face of the bottom metal electrode so as to restrain signal crosstalk between adjacent pixels.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic devices, and more specifically, to a thin film device, a photosensitive device and a display device for suppressing signal crosstalk between pixels. Background Art

[0002] Currently, the optoelectronic imaging arrays used in infrared cameras require high-purity, large-size, low-defect-density semiconductor crystals to be processed into PIN structures; then photolithography into pixels to form sensor arrays. Pixel formation includes deep trench etching of the PIN structure at the pixel scale, post-surface treatment, encapsulation passivation, and bonding to a complementary metal oxide semiconductor (CMOS)-based readout circuit integrated array on a silicon wafer. These processes limit pixel size, total pixel count, and manufacturing yield, thereby limiting system cost. Imperfect etching processes and post-passivation can also lead to charge traps in the semiconductor band gap, which also limits the optoelectronic performance and manufacturing yield of the device.

[0003] In contrast, thin-film photodetectors based on organic semiconductors offer new opportunities for wearable electronics and image sensing due to their excellent mechanical flexibility, bandgap tunability, and direct on-wafer integration into CMOS integrated circuits. In addition, organic semiconductors have high light absorption coefficients (typically >10 5 cm 2 ), moderate carrier mobility and low charge trap density within the energy gap, these properties make low-cost, large-area, high-pixel-count thin-film optical display or thin-film optical detection image array possible without the need for patterning the active sensing layer (G. Yu et al., "Large-area full-color image sensor made of semiconductor polymers", Adv. Materials 10, 1431 (1998)).

[0004] Whether this simple array structure with a non-patterned active layer can be used for image arrays with small pixel pitch and photosensitive (or luminous) arrays in PIN structures remains to be solved. The non-patterned lower charge transfer layer between the active layer and the patterned bottom metal electrode will cause current leakage between adjacent pixels. This leakage will cause pixel crosstalk between pixels, resulting in image blur; when the image pixel pitch is too small, it will also reduce the image contrast. Summary of the invention

[0005] In order to solve the problem of signal crosstalk between pixels caused by the non-patterned lower charge transfer layer between the active layer and the patterned bottom metal electrode in the above prior art, the present invention provides a thin film device, a photosensitive device and a display device for suppressing signal crosstalk between pixels.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0007] A thin film device for suppressing signal crosstalk between pixels, the thin film device comprising:

[0008] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of a bottom metal electrode layer disposed on a backplane and a metal compound semiconductor thin film layer plated on the bottom metal electrode layer;

[0009] A continuous / non-patterned active layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer, and a continuous / non-patterned transparent encapsulation layer are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top;

[0010] Wherein, the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array;

[0011] It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array by surface chemical reaction; the metal compound film is a semiconductor or an insulating layer;

[0012] The metal compound film serves as a pixel isolation structure to wrap the entire side surface of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0013] Preferably, the metal compound semiconductor film located on the upper surface of the bottom metal electrode is of P type or N type, and forms an ohmic contact with the upper surface of the bottom metal electrode.

[0014] Furthermore, when the metal compound semiconductor film is of P type, the material of the metal compound semiconductor film includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr or Mo, or oxides or sulfides of their metal alloys.

[0015] Furthermore, when the metal compound semiconductor film is of N-type, the material of the metal compound semiconductor film includes oxides of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or oxides of metal alloys thereof.

[0016] Furthermore, the metal compound semiconductor film is also doped with Mg and / or Ga.

[0017] Preferably, the method further comprises forming a Ti film or a Mo film between the bottom electrode metal and the metal compound semiconductor film.

[0018] Preferably, the surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high temperature thermal oxidation, chemical oxidation, and sulfurization.

[0019] Preferably, the material of the bottom metal electrode layer is Al, Ti, Cu, or a metal alloy thereof.

[0020] Furthermore, the metal compound film is an oxide of Al, Ti, Cu, or a metal alloy thereof.

[0021] Preferably, the metal compound semiconductor thin film layer is formed on the bottom metal electrode layer by magnetron sputtering, chemical vapor deposition, electrodeposition, solution film formation, sol-gel method, vacuum thermal evaporation, electron beam evaporation, or atomic layer deposition.

[0022] Preferably, the active layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single-phase or quantum dot nanoparticle, or a combination in a mixed form or a thin film stack; wherein D represents an organic molecule of an electron donor; A represents an organic molecule of an electron acceptor;

[0023] Wherein, the inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs nano-quantum dots, nano-quantum thin films or single-phase films;

[0024] The organic semiconductor includes an organic blend of one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form D / A.

[0025] A photosensitive device, comprising a backplane with a plurality of pixel readout circuits integrated therein, and a thin film device disposed on the backplane for suppressing signal crosstalk between pixels as described above;

[0026] The active layer serves as a photosensitive layer for detecting light incident on the photosensitive device;

[0027] Each pixel readout circuit is connected to a corresponding bottom metal electrode through a metal conductive column.

[0028] A display device, comprising a backplane with a plurality of pixel driving circuits integrated therein, and a thin film device for suppressing signal crosstalk between pixels as described above, arranged on the backplane;

[0029] The active layer is used as a light-emitting layer to generate light for light-emitting display;

[0030] Each of the pixel driving circuits is connected to a corresponding bottom metal electrode through a metal conductive column.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] The present invention passivates the side of each bottom metal electrode in the bottom metal electrode array with a dense, pinhole-free metal compound film. Since the side of the bottom metal electrode is wrapped by the metal compound film, the problem of too small spacing between two adjacent patterned bottom metal electrodes and current leakage between adjacent pixels caused by residual defects in pattern preparation is avoided, thereby effectively suppressing pixel crosstalk between two pixels. Therefore, the present invention improves clarity and achieves low pixel crosstalk. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the structure of the thin film device provided by the present invention.

[0034] Figure 2 The invention relates to a preparation process for forming a metal compound film on the side of a bottom metal electrode.

[0035] In the figure, 100-backplane, 101-substrate, 102-pixel readout circuit, 103-flat layer, 104-metal guide column, 200-bottom metal electrode, 201-metal compound film, 300-metal compound semiconductor film, 400-photosensitive layer, 500-upper charge transfer layer, 600-top metal electrode, 700-encapsulation layer, 140-photoresist coating. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. The present invention is described in detail below in combination with the drawings and specific implementation methods.

[0037] It should be understood that when used in this specification, the terms "include" and "comprising" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or collections thereof.

[0038] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention, unless the context clearly indicates otherwise, the singular forms of "a", "an" and "the" are intended to include plural forms.

[0039] It should be further understood that the term “and / or” used in the specification of the present invention refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0040] The term "bulk heterojunction structure" in the present invention refers to an interpenetrating network structure with nanoscale phase separation formed by blending donor and acceptor materials.

[0041] The term "donor material" in the present invention refers to a P-type semiconductor material.

[0042] The term "acceptor material" in the present invention refers to an N-type semiconductor material.

[0043] The term "I-semiconductor material" in the present invention refers to a non-doped intrinsic semiconductor material. The term "bandgap" in the present invention refers to the optical bandgap of the semiconductor material, and its value (in electron volts) can be obtained by dividing 1240 by the cutoff wavelength (in nanometers) of the absorption edge of the semiconductor material.

[0044] The term "active layer" in the present invention refers to a thin film layer having photoelectric or electro-optical activity in a device structure.

[0045] The term "photosensitive layer" in the present invention refers to a thin film layer in the device structure that is responsible for absorbing photons and generating free electrons and holes.

[0046] The term "light-emitting layer" in the present invention refers to a thin film layer that converts injected free electrons and holes into photons in a device structure.

[0047] Generally, in metal-semiconductor-metal (MSM) thin film devices, only the bottom metal electrode is patterned, and a continuous active layer and top metal electrode layer are used. The pixel size and pixel pitch of such thin film devices can be defined by the bottom metal electrode. When this structure is used for M1-PIN-M2 thin film devices, if only the bottom metal electrode is patterned, and the non-patterned lower charge transfer layer between the active layer and the bottom metal electrode, current leakage between adjacent pixels will occur, resulting in pixel crosstalk. This phenomenon is particularly serious when the image pixel pitch is too small. This leakage will cause image blur and reduce image contrast.

[0048] Therefore, the present invention patterns the lower charge transfer layer on the basis of the patterned bottom metal electrode, especially for image arrays with small pixel pitch and narrow space between adjacent pixels. In addition, the side of the entire bottom metal electrode is formed into a metal compound film as a pixel isolation structure through surface chemical reaction; the metal compound film encapsulates the side of the entire bottom metal electrode to eliminate current leakage between adjacent bottom metal electrodes, thereby effectively suppressing pixel crosstalk.

[0049] Specifically, the present invention provides a thin film device for suppressing signal crosstalk between pixels, the thin film device comprising:

[0050] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of a bottom metal electrode layer disposed on a backplane and a metal compound semiconductor thin film layer plated on the bottom metal electrode layer;

[0051] A continuous / non-patterned active layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer, and a continuous / non-patterned transparent encapsulation layer are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top;

[0052] wherein the patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor film array so that the metal compound semiconductor films in the metal compound semiconductor film array cover the upper surface of the bottom metal electrode in the bottom metal electrode array;

[0053] It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array by surface chemical reaction; the metal compound film is a semiconductor or an insulating layer;

[0054] The metal compound film serves as a pixel isolation structure to wrap the entire side surface of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0055] The metal compound film of the present invention is formed by surface chemical reaction (e.g., surface oxidation) on the side of the bottom metal electrode exposed to the air. This formation method is self-aligned, and the metal compound film formed by the surface chemical reaction is dense, uniform, and has no pinhole defects. The metal compound film wraps the entire side of the bottom metal electrode as a pixel isolation structure, which can avoid the problem of current leakage between adjacent pixels, thereby effectively suppressing signal crosstalk between adjacent pixels. Therefore, the leakage caused by defective points in the pixels of traditional thin film devices and the current leakage between adjacent pixels are greatly suppressed. It should be noted that the metal compound semiconductor film layer in the present invention is not formed by surface chemical reaction on the upper surface of the bottom metal electrode layer. Instead, the metal compound semiconductor film layer is directly plated on the bottom metal electrode layer by magnetron sputtering, chemical vapor deposition, electrodeposition, solution film formation, sol-gel method, vacuum thermal evaporation, electron beam evaporation, or atomic layer deposition. Therefore, the metal compound semiconductor film layer may not be a semiconductor metal oxide corresponding to the metal of the bottom metal electrode layer.

[0056] Since the metal oxide film formed on the side of the bottom metal electrode of the present invention is an insulating layer or a semiconductor layer, it can effectively suppress signal crosstalk between pixels, so the distance between pixels can be made smaller, thereby realizing a large-size thin film device with high pixel density and millions of pixels.

[0057] In this embodiment, the metal compound semiconductor film located on the upper surface of the bottom metal electrode is P-type or N-type, and forms an ohmic contact with the upper surface of the bottom metal electrode. The metal compound semiconductor film serves as a lower charge transport layer, and forms a PIN or NIP structure with the active layer and the upper charge transport layer. It can be seen that the present invention provides a thin film device with a PIN pixel structure with high pixel density and small pixel pitch.

[0058] Based on the provided thin film device for suppressing signal crosstalk between pixels, the present invention also provides a method for preparing the thin film device for suppressing signal crosstalk between pixels, and the preparation method comprises the following steps:

[0059] forming a continuous bottom metal electrode layer on the provided backplane;

[0060] Plating a continuous metal compound semiconductor thin film layer on the continuous bottom metal electrode layer;

[0061] Performing a single photolithography patterning process on the bottom metal electrode layer and the metal compound semiconductor thin film layer to obtain a patterned bottom metal electrode array and a patterned metal compound semiconductor thin film array aligned with the patterned bottom metal electrode array; wherein the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array;

[0062] A surface chemical reaction takes place on the side of the bottom metal electrode exposed to the air to form a dense, pinhole-free metal compound film;

[0063] A continuous / non-patterned active layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer, and a continuous / non-patterned transparent encapsulation layer are sequentially formed from bottom to top on the metal compound semiconductor thin film array.

[0064] The present invention can realize large-scale thin film devices with high pixel density, millions of pixels, and PIN-type thin film sensor devices by performing a single photolithography patterning process on the bottom metal electrode layer and the metal compound semiconductor thin film layer. The present invention forms an aligned bottom metal electrode array and a patterned metal compound semiconductor thin film array through a single photolithography patterning process. This process preparation method eliminates the alignment problem introduced by multi-layer photolithography preparation of large-area arrays, eliminates the yield loss of misaligned devices, and thus has a very high manufacturing yield.

[0065] The active layer of the present invention can be used as a photosensitive layer or a light-emitting layer; when the active layer is used as a photosensitive layer, the thin film device can be used to make a photosensitive device (i.e., a photoelectric detection device). The main principle of the photosensitive device is to use the photovoltaic effect to complete photoelectric conversion. The generated carriers are transmitted to the external circuit through a built-in electric field or reverse bias to complete the signal detection process.

[0066] In addition to being a photosensitive layer, when the active layer uses a luminescent material as the light-emitting layer, the thin film device is a display device (i.e., a light-emitting display device). Contrary to the working principle of the photosensitive device, the display device operates under a forward bias voltage, so the carriers are injected into the light-emitting layer under the drive of the electric field, rather than extracting the carriers to the external circuit.

[0067] Example 1

[0068] This embodiment takes a photosensitive device as an example to explain in detail. Figure 1 As shown, a photosensitive device for suppressing signal crosstalk between pixels, the photosensitive device comprising:

[0069] A backplane 100 having a plurality of pixel readout circuits 102 integrated therein;

[0070] A thin film device for suppressing signal crosstalk between pixels is disposed on the backplane 100, and the thin film device specifically includes:

[0071] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by performing a single photolithography patterning process on the bottom metal electrode layer disposed on the back plate 100 and the metal compound semiconductor thin film layer plated on the bottom metal electrode layer;

[0072] A continuous / non-patterned photosensitive layer 400, a continuous / non-patterned upper charge transport layer 500, a continuous / non-patterned top metal electrode layer 600, and a continuous / non-patterned transparent encapsulation layer 700 are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top;

[0073] The patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor film array, so that the metal compound semiconductor film 300 in the metal compound semiconductor film array covers the upper surface of the bottom metal electrode 200 in the bottom metal electrode array;

[0074] It also includes a layer of dense, pinhole-free metal compound film 201 formed by surface chemical reaction on the side of the bottom metal electrode 200 in the bottom metal electrode array; the metal compound film 201 is a semiconductor or insulating layer;

[0075] The metal compound film 201 wraps the entire side of the bottom metal electrode 200 as a pixel isolation structure to suppress signal crosstalk between adjacent pixels;

[0076] Each of the pixel readout circuits 102 is connected to a corresponding bottom metal electrode 200 via a metal conductive pillar 104 .

[0077] In this embodiment, the photosensitive layer 400 is used to detect light incident on the photosensitive device. The metal compound semiconductor film 300 located on the upper surface of the bottom metal electrode 200 serves as a lower charge transport layer, and forms a PIN junction or a NIP junction with the photosensitive layer 400 and the upper charge transport layer 500, respectively.

[0078] like Figure 1, which is a cross-sectional view of the entire photosensitive device. The backplane 100 can be made of various insulating materials or high-resistance semiconductor materials, and can have a flat surface or a curved surface of a specific shape; in addition to inorganic semiconductor wafer materials, the backplane 100 can also be glass, ceramic or plastic. For a photosensitive device for image sensing, a plurality of pixel readout circuits 102 are integrated on the backplane 100. For a photosensitive device with a high pixel density, the pixel readout circuit 102 is usually made on the upper surface of a single crystal silicon wafer using a CMOS process. For a photosensitive device with a medium or low light-sensitive pixel density, the backplane 100 can integrate a pixel readout circuit 102 of a CMOS field effect tube or a thin film transistor (TFT). For an image array with an ultra-large scale and a high light-sensitive pixel density, the pixel readout circuit 102 on the backplane 100 can be made of a CMOS field effect tube (MOSFET, or FET). For a pixel readout circuit 102 made on a single crystal silicon wafer using a CMOS integrated circuit process, it can be connected to a corresponding bottom metal electrode 200 through a metal guide column 104. The preparation of the metal guide pillars 104 and the flat layer 103 can be achieved by using the materials and processes used in the back-end preparation of traditional silicon wafers. In addition to using the preparation process used in the back-end of the silicon crystal production line, the preparation of the metal guide pillars 104 and the flat layer 103 can also be achieved by using the corresponding processes used in the thin film transistor (TFT) backplane process. Specifically, above the pixel readout circuit 102 of the CMOS field effect transistor or thin film transistor (TFT), the flat layer 103 can be formed by vapor deposition using inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride. The flat layer 103 can also be made of organic insulating materials that can be prepared by photolithography patterning (such as photolithography patternable polyimide films, photolithography patternable polyacrylate films). The flat layer 103 can also be achieved by using a stack of the above-mentioned inorganic insulating materials and organic insulating materials. When this preparation method is used, the metal guide pillars 104 do not need to be prepared separately and can be achieved simultaneously when preparing the bottom metal electrode.

[0079] In this embodiment, Figure 1 The device structure shown can vertically overlap the photosensitive pixels (200-600 stacked structures) with the pixel readout circuit 102 below, which is commonly known as a three-dimensional circuit. This design can effectively reduce the pixel size and thus increase the pixel density.

[0080] In this embodiment, the upper surface of the backplane 100 is a bottom metal electrode array formed by a patterned bottom metal electrode layer, which includes a plurality of bottom metal electrodes 200. The thickness of the bottom metal electrode 200 can be selected in the range of 50nm to 500nm according to the requirements for the reflectivity of the photosensitive layer. The material of the bottom metal electrode layer is Al, Ti, Cu, or a metal alloy thereof, wherein the metal alloy can be an Al-Pa alloy, a Ti-Al alloy, an Al-Mg alloy, an Al-Cu alloy, an Al-Nb alloy, an Al-Nd alloy, or an Al-Zr alloy. Among them, Al (98%) -Nb (2%) is an alloy widely used in the display and wafer industries. Therefore, the metal compound film 201 formed by the surface chemical reaction of the bottom metal electrode 200 is an oxide of Al, Ti, Cu, or an oxide of a metal alloy containing Al, Ti, or Cu, such as aluminum oxide. Since aluminum oxide is insulating, it effectively avoids current leakage between adjacent pixels, thereby suppressing pixel crosstalk between pixels. It should be noted that Ti2O3 (titanium trioxide) formed by oxidation is also an insulator, but TiO2 (titanium dioxide) is an n-type wide bandgap semiconductor material. Therefore, when Ti is used as the bottom metal electrode, if an insulating layer needs to be formed on its side, it is oxidized to Ti2O3; if a semiconductor layer needs to be formed on its side, it is oxidized to TiO2 (titanium dioxide). CuO (copper oxide) formed by surface chemical reaction of Cu is a P-type semiconductor.

[0081] The metal compound film 201 formed by the surface chemical reaction of the present invention is a dense film without pinhole defects.

[0082] In a specific embodiment, the metal compound semiconductor film 300 located on the upper surface of the bottom metal electrode 200 is of P type or N type, and forms an ohmic contact with the upper surface of the bottom metal electrode 200 .

[0083] The metal compound semiconductor film 300 serves as a lower charge transport layer, and forms a PIN or NIP structure with the photosensitive layer 400 and the upper charge transport layer 400. Since the metal compound semiconductor film 300 covers the upper surface of the bottom metal electrode 200, when the bottom metal electrode 200 undergoes a surface chemical reaction, the upper surface of the bottom metal electrode 200 will not undergo a surface chemical reaction.

[0084] In this embodiment, when the metal compound semiconductor film 300 is of P type, the material of the metal compound semiconductor film 300 includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr or Mo, or oxides or sulfides of metal alloys thereof, such as MoO, WO3, NiO, CuO2, CuSCN, etc.

[0085] In this embodiment, when the metal compound semiconductor film 300 is of N type, the material of the metal compound semiconductor film 300 includes an oxide of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or an oxide of a metal alloy thereof. For example, ZnO, AlZnO, InGaZnO, TiO 2-x 、Ta2O 5-x etc.

[0086] Furthermore, the metal compound semiconductor film is doped with Mg and / or Ga. The present invention changes the work function of the metal compound semiconductor film by doping a small amount of metal (Mg and / or Ga) into the metal compound semiconductor film.

[0087] like Figure 2 As shown, the present invention also provides a method for preparing a thin film device for suppressing signal crosstalk between pixels, and the preparation method comprises the following steps:

[0088] forming a continuous bottom metal electrode layer on the provided backplane 100;

[0089] forming a continuous metal compound semiconductor thin film layer on the continuous bottom metal electrode layer;

[0090] The bottom metal electrode layer and the metal compound semiconductor thin film layer are subjected to a single photolithography patterning process, specifically, a layer of photoresist coating 140 is first spin-coated on the metal compound semiconductor thin film layer; then, a mask is used for exposure, and a pattern is formed in a developing tank as a mask to etch the bottom metal electrode layer and the metal compound semiconductor thin film layer; finally, a suitable etchant is used to etch the metal compound semiconductor thin film layer and the bottom metal electrode layer, thereby obtaining a patterned / non-continuous bottom metal electrode array and a metal compound semiconductor thin film array; wherein the metal compound semiconductor thin film 300 in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode 200 in the bottom metal electrode array;

[0091] The photoresist coating 140 on the upper surface of the metal compound semiconductor film 300 is removed, and a surface chemical reaction is performed on the side of the bottom metal electrode 200 exposed to the air to form a dense, pinhole-free metal compound film 201 .

[0092] A continuous / non-patterned photosensitive layer 400 , a continuous / non-patterned upper charge transport layer 500 , a continuous / non-patterned top metal electrode layer 600 , and a continuous / non-patterned transparent encapsulation layer 700 are sequentially formed on the metal compound semiconductor film 300 from bottom to top.

[0093] The bottom metal electrode 200 can be prepared by magnetron sputtering, thermal evaporation, or electron beam evaporation.

[0094] The metal compound semiconductor film on top can be prepared by one or more methods selected from magnetron sputtering, electron beam evaporation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition, solution film formation, and sol-gel film formation. Selecting an appropriate preparation environment can ensure that the metal compound semiconductor film 300 forms an ohmic contact with the upper surface of the bottom metal electrode 200.

[0095] It should be noted that if the metal compound semiconductor film 300 is prepared by a solution film forming method or a sol-gel film forming method, after the precursor is formed, it is first heat treated at an appropriate temperature and then subjected to a photolithography patterning process to ensure that the metal compound semiconductor film 300 will not dissolve in a photoresist stripping solution made of a polar solvent (such as acetone).

[0096] In this embodiment, a suitable etchant is used to etch the metal compound semiconductor thin film layer and the bottom metal electrode layer; for example, oxalic acid is used as an etchant to etch ZnO, AlZnO, AlSnO, InGaZnO, InSnZnO, InAlZnO, MoO, WO3, NiO, CuO2, and CuSCN. A type aluminum etchant and a type D aluminum etchant are used to etch the aluminum metal layer or the aluminum alloy layer. In addition, a dry etching method can also be used to implement a gel film forming method to prepare a patterned metal compound semiconductor thin film 300 and a bottom metal electrode 200 thereunder.

[0097] In this embodiment, the photosensitive layer 400 is prepared by a method selected from solution film forming or vacuum thermal evaporation deposition.

[0098] The preparation of the upper charge transport layer 500 can be independently selected from one or more of solution film formation, sol-gel film formation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition, and anodization.

[0099] The preparation of the top metal electrode 600 and the bottom metal electrode 200 are independently selected from one or more of vacuum thermal evaporation, electron beam evaporation, molecular beam evaporation or plasma sputtering, atomic layer deposition or liquid film formation followed by reduction conversion, electroplating or electrodeposition.

[0100] In this embodiment, the surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high temperature thermal oxidation, chemical oxidation, and sulfurization.

[0101] Compared with various defects that are easily formed during the photolithography patterning process, the metal compound film 201 formed by the surface chemical process is dense and has no pinhole defects. In addition, the pattern of the metal compound film 201 generated by the surface chemical reaction is automatically aligned with the pattern of the bottom metal electrode 200. The present invention forms the metal compound film 201 on the side of the bottom metal electrode 200 through the surface chemical reaction, which can suppress the signal crosstalk between pixels, thereby preparing a photosensitive device with a small pixel pitch and a high pixel density.

[0102] In this embodiment, the thickness of the metal compound film 201 can be controlled by the process parameters used in the surface chemical reaction. The thickness of the metal compound film 201 is usually set to 5nm-100nm. Preferably, the thickness of the metal compound film 201 is 10-50nm.

[0103] In this embodiment, if the average surface roughness of the metal compound semiconductor film 300 on the upper surface of the bottom metal electrode 200 is relatively large, the photosensitive layer 400 formed on the metal compound semiconductor film 300 will form pinholes, shorten the device and form bright pixel defects, which is not conducive to forming a high-quality photosensitive layer 400. Therefore, the average surface roughness of the metal compound semiconductor film 300 is generally required to be less than 5nm, and preferably, the average surface roughness of the metal compound semiconductor film 300 is less than 3nm.

[0104] In this embodiment, a layer of Ti film or Mo film is formed between the bottom metal electrode 200 and the metal compound semiconductor film 300. The Ti film or Mo film covers the upper surface of the bottom metal electrode 200, which can provide the bottom metal electrode 200 with anti-oxidation ability, especially the bottom metal electrode 200 made of aluminum; when the metal compound semiconductor film is N-type, the Ti film can also improve the resistance between the bottom metal electrode 200 and the N-type metal compound semiconductor film; when the metal compound semiconductor film is P-type, the Mo film can also improve the resistance between the bottom metal electrode 200 and the P-type metal compound semiconductor film.

[0105] Specifically, during the preparation, a bottom metal electrode layer is first formed on the backplane, and then a layer of Ti film or Mo film is formed, and then a metal compound semiconductor film layer is plated; finally, the bottom metal electrode layer, the Ti film or Mo film, and the metal compound semiconductor film layer are patterned by single photolithography to obtain a patterned metal electrode array, a Ti film or Mo film array aligned with the metal electrode layer array, and a metal compound semiconductor film array.

[0106] In this embodiment, the surface chemical reaction method specifically includes oxygen plasma surface treatment at room temperature or high temperature, chemical oxidation in air and oxygen-rich environment, humid air at room temperature or high temperature, and chemical oxidation using an oxidant (such as H2O2, 85C-100C hot water), or a combination of the above processes. In addition to oxidation on the side of each bottom metal electrode 200, sulfurization (such as treatment with H2S) can also be performed on the side of each bottom metal electrode 200. Therefore, a metal sulfide film or a metal sulfate film can also be formed by sulfurizing the side of the bottom metal electrode 200 with a corresponding reactant.

[0107] In a specific embodiment, the patterned bottom metal electrode 200 and the metal compound semiconductor film 300 with strong light reflection in the working spectrum range are preferred. For example, metal aluminum Al has strong reflection in a wide spectrum range of ultraviolet, visible light and infrared. TiO2-x is formed as an N-type metal compound semiconductor film by magnetron sputtering on the bottom metal electrode 200 prepared by metal Al, because a strong optical resonant cavity effect is formed on the upper and lower surfaces of the TiO2-x film. Therefore, the Al / TiO2-x double-layer film can show the maximum reflection in certain spectral ranges, which can be used to optimize the photosensitivity of the photosensitive device at a specific wavelength of use.

[0108] TiO2-x and Ta2O 5-x It is an N-type metal compound semiconductor film. Their Fermi level is about -4.1eV, and its Fermi level can be adjusted by adding magnesium, aluminum, zinc, tin or copper to form an alloy compound semiconductor film. Similarly, the Fermi level matching the photosensitive layer 400 can also be achieved by alloy compound semiconductor films.

[0109] In this embodiment, the metal compound semiconductor film 300 is provided with additional electrons by interstitial metal and oxygen vacancies, and serves as the main charge carriers. The charge carrier concentration can be regulated by the surface chemical reaction conditions, that is, while the side of the bottom metal electrode 200 is oxidized in oxygen-rich air, O is also doped in the metal compound semiconductor film 300 to form the desired carrier concentration. The carrier concentration of the metal compound semiconductor film 300 can range from 10 15 cm -3 -10 20 cm -3 Internal regulation.

[0110] In a specific embodiment, the energy gap of the metal compound semiconductor film 300 is greater than the energy gap of the photosensor 400 .

[0111] Taking TiO2-x as an example, TiO2-x is an N-type semiconductor with an energy gap of about 3.1 eV (light absorption starts at 400 nm). This wide-gap N-type oxide semiconductor can effectively pull photogenerated electrons out of the photosensitive layer, but will block photogenerated holes at the TiO2-x / photosensitive layer interface.

[0112] As for the dark current, under low-field reverse bias or zero bias, the NI interface can block holes, while the IP interface can block electrons, thereby reducing the dark current again.

[0113] In this embodiment, the photosensitive layer 400 includes an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single-phase or quantum dot nanoparticle, or a combination thereof in a mixed form or a thin film stack. Wherein, D represents an organic molecule of an electron donor; A represents an organic molecule of an electron acceptor.

[0114] Wherein, the inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs nano-quantum dots, nano-quantum thin films or single-phase films.

[0115] The organic semiconductor includes an organic blend of one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form D / A.

[0116] In this embodiment, the photosensitive layer 400 may have at least one molecular component with an energy gap less than 1.7 eV (wavelength greater than 700 nm), that is, the photosensitive device in this embodiment may be an infrared photodetector.

[0117] In this embodiment, for the photosensitive device, the photosensitive layer 400 can be a single molecule type organic semiconductor film, or a mixed film (commonly referred to as a D / A body heterojunction film) comprising at least one donor molecule (D) and one acceptor molecule (A). Donor (acceptor) molecules are often referred to as P-type (N-type) in the traditional inorganic semiconductor device industry. The photosensitive layer 400 can also be made together with other thin film semiconductor layers. For example, it includes perovskite semiconductor films (such as PbI2 and / or PbI3), PbS, CuInSe2, CuInSSe, CuInGaSe, CuInGaSSe.

[0118] The absorption coefficients of the organic and inorganic compound semiconductors listed above are in the range of 10 4 -10 5 cm -1In the range of 100nm-1um, the photosensitive layer can achieve a light absorption rate of 90%-99% in the working range. This is in sharp contrast to the photosensitive layer in the silicon CMOS image array, where the photosensitive layer usually needs a thickness of 10-500um to achieve high light absorption in the near-infrared region (700nm-1000nm).

[0119] The photosensitive layer 400 can also be made of a thin film structure composed of multiple semiconductor materials listed above to achieve the desired spectral response or performance improvement. In addition, the photosensitive layer 400 can also be made of a composite film containing the above-mentioned semiconductor materials. As mentioned above, the photosensitive layer 400 can be made of organic molecules in the form of a D / A body heterojunction. The hybrid blended film can also be made of a phase including an organic semiconductor and another phase including inorganic semiconductor nanoparticles (or quantum dots). By utilizing the unique mechanical and electronic properties of organic semiconductors, this hybrid blended film can be made with low trap states in the semiconductor energy gap, thereby improving device performance.

[0120] In this embodiment, the upper charge transport layer 500 is generally composed of a metal compound semiconductor film 300 having a charge opposite to that of the lower charge transport layer, and the metal compound semiconductor film, the photosensitive layer, and the upper charge transport layer 500 can be stacked to form a PIN (or NIP) structure. In addition to the PIN junction or the NIP junction, various structures such as PIP, NIN, NIPIN, and PINIP can also be stacked to form.

[0121] When the bottom metal electrode 200 is an anode, the metal compound semiconductor film 300 serves as a hole transport layer, the upper charge transport layer 500 serves as an electron transport layer, and the top metal electrode 600 serves as a cathode. When the bottom metal electrode 200 is a cathode, the metal compound semiconductor film 300 serves as an electron transport layer, the upper charge transport layer serves as a hole transport layer 500, and the top metal electrode 600 serves as an anode.

[0122] This example also includes: adding a surface promoting material (commonly referred to as a self-assembled monolayer, SAM) between the metal compound semiconductor film 300 and the photosensitive layer 400 to improve adhesion and reduce surface defects at the interface. When the metal compound semiconductor film is an N-type semiconductor, the SAM material used in the formed NI contact interface includes SAM-C60, C60-COOH-SAM and SAM-PBD. When the metal compound semiconductor film is a P-type semiconductor, the SAM materials suitable for the formed PI contact interface include 2PACz, x-4PACz (where x = H, Cl, F, Ph) and PPAOMe. Their molecular structures are shown below.

[0123]

[0124] When necessary, a packaging layer 700 is added above the top metal electrode 600 to ensure that the photosensitive device can work stably under various usage environments and during the target lifespan. The packaging layer 700 should be transparent in the working band and the optical transmittance should be above 50%.

[0125] The encapsulation layer 700 can be formed by various vacuum coating methods, such as thermal evaporation, molecular beam coating, plasma sputtering, or atomic layer deposition. It can also be prepared by liquid film forming methods, such as drop coating, dip coating, spin coating and various printing methods. In addition to selecting a single material, the encapsulation layer can also be formed by alternating multiple layers of film. In addition to improving the performance of the encapsulation layer, this multilayer film structure can also be used to optimize the optical resonant cavity structure of the thin film photodiode in the working band, thereby optimizing its photosensitivity and specific detection rate.

[0126] The encapsulation layer 700 is made of inorganic materials including silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, magnesium oxide, zirconium oxide and magnesium fluoride. The organic materials are polymethyl methacrylate, polyethylene oxide, polystyrene, polyvinyl pyrrolidone, polycarbonate, polyacrylic acid, epoxy resin, polyparaxylene and polysiloxazane.

[0127] In this embodiment, the continuous / non-patterned top metal electrode layer 600 is transparent or translucent, and examples of its constituent materials include thin layers of titanium (Ti), tungsten (W), titanium nitride (TiN), platinum (Pt), gold (Au), silver (Ag), germanium (Ge), nickel (Ni), any single substance of tin (Sn) and aluminum (Al) or an alloy containing at least one of them. Among them, indium titanium oxide (InTiO) has high light transmittance with respect to the infrared region and is expected to be used as a constituent material of the continuous / non-patterned transparent top metal electrode layer 600. In addition to the materials mentioned above, examples of materials for the top metal electrode 600 include indium tin oxide (ITO), tin oxide (SnO2), indium tungsten oxide (InWO), indium zinc composite oxide (InZnO), aluminum-doped zinc oxide (AlZnO), gallium-doped zinc oxide (GaZnO), magnesium- and aluminum-doped zinc oxide (AlMgZnO), indium gallium composite oxide (InGaO), InGaZnO4 (IGZO), fluorine-doped indium oxide (FIO), antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO), zinc oxide (ZnO), boron-doped ZnO (BZnO), and indium tin zinc oxide (InSnZnO).

[0128] The material of the upper charge transport layer 500 as an electron transport layer is selected from organic compound 1, inorganic compound 1, or a combination thereof;

[0129] Wherein, the organic compound 1 is selected from fullerene and its derivatives, 4,7-diphenyl-1,10-phenanthroline, polyethyleneimine, polyethoxyethyleneimine, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline,

[0130] [9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], bromo-[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 8-hydroxyquinoline lithium, 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene, bis(2-methyl-8-quinolinol)-4-(phenylphenol)aluminum, 1,3,5-tri[(3-pyridyl)-phenyl-3-yl]benzene, or a mixture or a composite of the above materials;

[0131] The inorganic compound 1 is selected from zinc oxide, tin oxide, aluminum-doped zinc oxide, magnesium-doped zinc oxide, gallium-doped zinc oxide, tin-doped zinc oxide, titanium oxide, tantalum oxide, zinc sulfide, chromium sulfide, or a mixture or composite of the above materials.

[0132] The material of the upper charge transport layer 500 as a hole transport layer is selected from organic compound 2, inorganic compound 2, or a combination thereof;

[0133] Wherein, the organic compound 2 is selected from one or more of 4,4'-cyclohexylbis[N,N'-bis(4-methylphenyl)aniline], N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine, N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,7-diamino-9,9-spirobifluorene, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4',4"-tri(carbazole-9-yl)triphenylamine, poly(4-butyltriphenylamine), polyvinylcarbazole, polystyrene-N,N'-diphenyl-N,N'-bis-(3-methylphenyl)-(1,1)-biphenyl-4,4'-diamineperfluorocyclobutane, poly(3,4-ethylenedioxythiophene) mixed polystyrene sulfonate;

[0134] The inorganic compound 2 is selected from tungsten oxide, molybdenum oxide, vanadium oxide, chromium oxide, nickel oxide, copper oxide, cuprous oxide, cuprous thiocyanate, copper sulfide, copper iodide, or a mixture or a composite of the above materials.

[0135] Example 2

[0136] This embodiment provides a display device, comprising a backplane with a plurality of pixel driving circuits integrated therein, and a thin film device disposed on the backplane for suppressing signal crosstalk between pixels;

[0137] Each of the pixel driving circuits is connected to a corresponding bottom metal electrode through a metal conductive column.

[0138] Wherein, the thin film device comprises:

[0139] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of a bottom metal electrode layer disposed on a backplane and a metal compound semiconductor thin film layer plated on the bottom metal electrode layer;

[0140] A continuous / non-patterned light-emitting layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer, and a continuous / non-patterned transparent encapsulation layer are sequentially stacked from bottom to top on a patterned metal compound semiconductor film array; and further comprising a layer of dense, pinhole-free metal compound film formed by surface chemical reaction on the side of the bottom metal electrode in the bottom metal electrode array; the metal compound film is a semiconductor or insulating layer;

[0141] The metal compound film serves as a pixel isolation structure to wrap the entire side surface of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0142] The structure and manufacturing process of the display device are basically the same as those of the photosensitive device in Example 1. Figure 1 The specific differences are as follows:

[0143] The photosensitive layer 400 is replaced by a light-emitting layer for generating light for light-emitting display.

[0144] In this embodiment, the undoped active layer can be used as a light-emitting layer, which includes one or more light-emitting materials and can adopt a multi-layer or single-layer structure. The light-emitting efficiency can be optimized by adjusting the mixing ratio and film thickness in the form of a donor / host (host / guest) mixture.

[0145] Depending on the material used in the light-emitting layer, the emission wavelength can be UV (200-400nm), visible light (400-700nm), near infrared (700-1000nm), short wavelength infrared (1000-2500nm), medium wavelength infrared (2.5-25um) or a combination of multiple bands above.

[0146] The material of the light-emitting layer includes a p-type organic semiconductor material and an n-type organic semiconductor material, wherein the p-type organic semiconductor may be a compound that functions as an electron donor for supplying electrons.

[0147] For example, the p-type organic semiconductor may be boron subphthalocyanine chloride (SubPc), copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or any combination thereof, but is not limited thereto. The n-type organic semiconductor may be a compound that acts as an electron acceptor for receiving electrons. For example, the n-type organic semiconductor may be N2200, C60 fullerene, C70 fullerene, or any combination thereof, but is not limited thereto.

[0148] Among them, the molecular structure of N2200 is as follows:

[0149]

[0150] When the upper charge transport layer is used as an electron transport layer, it can include 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ or any combination thereof.

[0151] The electron transport layer may further include a metal-containing substance in addition to the above materials.

[0152] The metal-containing substance may include an alkali metal complex, an alkaline earth metal complex or any combination thereof. The metal ion of the alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion or a Cs ion, and the metal ion of the alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion or a Ba ion. The ligand coordinated with the metal ions of the alkali metal complex and the alkaline earth metal complex may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0153] When the upper charge transport layer is used as a hole transport layer, it can include the following m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD (Spiro-TPD), Spiro-NPB (Spiro-NPB), methylated-NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA: 4,4',4"-tris(N-carbazolyl)triphenylamine), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA: Polyaniline / Dodecylbenzenesulfonic acid), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS: Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), polyaniline / camphorsulfonic acid (PANI / CSA: Polyaniline / Camphor sulfonic acid acid), polyaniline / poly(4-styrenesulfonate) (PANI / PSS: Polyaniline / Poly(4-styrenesulfonate)), or any combination thereof.

[0154] Example 3

[0155] In this embodiment, O2 plasma can be used to form a dense, pinhole-free metal compound film on the side of the bottom metal electrode.

[0156] Same process conditions and equipment as O2 plasma. Pump down to 300mtorr, then turn on the plasma source, set the power to 300W, and continue for 15 minutes. The backplane temperature can be set in the range of 25℃ to 100℃. If necessary, the above process can be repeated, thereby producing a dense, pinhole-free metal compound film on the side of the bottom metal electrode. If necessary, the surface of the wafer can be adjusted to a non-perpendicular direction to the ion beam to optimize the chemical reaction rate. Large area uniformity can be ensured by wafer rotation.

[0157] Example 4

[0158] This embodiment may also adopt annealing in high temperature air at 100-300° C., so as to form a dense metal compound film on the side of the bottom metal electrode.

[0159] Specifically, after patterning the bottom metal electrode array (the bottom metal electrode material is aluminum) and the metal compound semiconductor film array on the silicon wafer, the silicon wafer is cleaned in an ultrasonic bath in acetone for 5 minutes, and then in an ultrasonic bath in isopropanol for 5 minutes. The silicon wafer is then heated at about 120°C for 20 minutes and annealed to form an aluminum oxide film layer on the side of the bottom metal electrode on the silicon wafer. It should be noted that if the metal compound insulating film is formed only by high-temperature oxidation, it is not necessary to be on the silicon wafer.

[0160] It should be noted that for the bottom metal electrode film made of pure aluminum, the temperature should not be too high during high-temperature oxidation and can be kept below 150°C. This is to avoid the hillock problem in the pure aluminum film. The hillock is a small peak formed during the high-temperature heating of the pure aluminum film. However, if an aluminum alloy (such as Al-Nd, Al-Nb, Al-Zr) is used, the hillock problem in the pure aluminum film can be effectively avoided, and the Al alloy film can be heated to 200-250°C for surface oxidation without causing the hillock to pierce the thin oxide layer on the top and the thin Al2O3 layer on the side.

[0161] Example 5

[0162] For the bottom metal electrode, this embodiment can use chemical oxidation treatment (H2O2 or 85°C hot water) to form a dense metal compound film on the side of the bottom metal electrode.

[0163] Example 6

[0164] By using a combination of any of the oxidation methods in Examples 3 to 5, a higher quality pinhole-free and dense metal compound film is formed on the side of the bottom metal electrode.

[0165] Within the scope of protection of the present invention, the technical solutions and / or implementation methods may be modified and varied in various ways. For example, a bottom metal electrode that is transparent in the short-wave infrared region (such as ITO, AlZnO, CuOx) may be used to replace the opaque metal electrode. Figure 1 The photosensitive device shown can detect incident images from both the top and bottom. For images incident from the top, it can detect image information in a wide band from ultraviolet, visible, near infrared to short-wave infrared; for images incident from the bottom, this device is only sensitive to image information in the short-wave infrared region (wavelength greater than 1 micron). This image photosensitive device can replace multiple cameras in portable devices such as mobile phones and helmets.

[0166] Obviously, the above embodiments of the present invention are only examples for clearly explaining the present invention, and are not intended to limit the implementation methods of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A thin film device for suppressing signal crosstalk between pixels, characterized in that: The thin film device comprises: The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of a bottom metal electrode layer disposed on a backplane and a metal compound semiconductor thin film layer plated on the bottom metal electrode layer; A continuous / non-patterned active layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer, and a continuous / non-patterned transparent encapsulation layer are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top; wherein the patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor film array so that the metal compound semiconductor films in the metal compound semiconductor film array cover the upper surface of the bottom metal electrode in the bottom metal electrode array; It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array by surface chemical reaction; the metal compound film is a semiconductor or an insulating layer; The metal compound film serves as a pixel isolation structure to wrap the entire side surface of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

2. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: The metal compound semiconductor film located on the upper surface of the bottom metal electrode is of P type or N type and forms an ohmic contact with the upper surface of the bottom metal electrode.

3. The thin film device for suppressing signal crosstalk between pixels according to claim 2, characterized in that: When the metal compound semiconductor film is of P type, the material of the metal compound semiconductor film includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr or Mo, or oxides or sulfides of their metal alloys.

4. The thin film device for suppressing signal crosstalk between pixels according to claim 2, characterized in that: When the metal compound semiconductor film is of N-type, the material of the metal compound semiconductor film includes oxides of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or oxides of metal alloys thereof.

5. The thin film device for suppressing signal crosstalk between pixels according to any one of claims 1 to 4, characterized in that: The metal compound semiconductor film is further doped with Mg and / or Ga.

6. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: The method also includes forming a Ti film or a Mo film between the bottom electrode metal and the metal compound semiconductor film.

7. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: The surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high temperature thermal oxidation, chemical oxidation, and sulfurization.

8. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: The material of the bottom metal electrode layer is Al, Ti, Cu, or a metal alloy thereof.

9. The thin film device for suppressing signal crosstalk between pixels according to claim 8, characterized in that: The metal compound film is an oxide of Al, Ti, Cu, or a metal alloy thereof.

10. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: A metal compound semiconductor thin film layer is formed on the bottom metal electrode layer by magnetron sputtering, chemical vapor deposition, electrodeposition, solution film formation, sol-gel method, vacuum thermal evaporation, electron beam evaporation, or atomic layer deposition.

11. The thin film device for suppressing signal crosstalk between pixels according to claim 1, characterized in that: The active layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blended film, an inorganic semiconductor or a compound semiconductor in the form of a single-phase or quantum dot nanoparticle, or a combination in a mixed form or a thin film stack; wherein D represents an organic molecule of an electron donor; and A represents an organic molecule of an electron acceptor; Wherein, the inorganic semiconductor includes Si, Ge, SiGe, CuInS in crystalline or polycrystalline form. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs nano-quantum dots, nano-quantum thin films or single-phase films; The organic semiconductor includes an organic blend of one or more organic molecules used as electron donors (D) and one or more organic molecules used as electron acceptors (A) to form D / A.

12. A photosensitive device, characterized in that: It comprises a backplane with a plurality of pixel readout circuits integrated therein, and a thin film device for suppressing signal crosstalk between pixels as claimed in any one of claims 1 to 11 arranged on the backplane; The active layer serves as a photosensitive layer for detecting light incident on the photosensitive device; Each pixel readout circuit is connected to a corresponding bottom metal electrode through a metal conductive column.

13. A display device, characterized in that: A backplane having a plurality of pixel driving circuits integrated therein, and a thin film device for suppressing signal crosstalk between pixels as claimed in any one of claims 1 to 11 arranged on the backplane; The active layer is used as a light-emitting layer to generate light for light-emitting display; Each of the pixel driving circuits is connected to a corresponding bottom metal electrode through a metal conductive column.

Images