A broadband high-matching waveguide combiner and an implementation method thereof

Abstract

The application discloses a kind of wideband high matching waveguide synthesizer and implementation method thereof, for solving the problem of low matching degree between waveguide synthesizer and two-way single-pole diode waveguide switch when input signal is not simultaneously present at the input end of waveguide synthesizer, belongs to radar microwave technology and antenna feeder technology field.The waveguide impedance of two-way single-pole diode waveguide switch output end two waveguides side by side is connected as the load waveguide impedance Z L The input section waveguide length L1 of waveguide synthesizer is set so that the input impedance Zin of waveguide synthesizer input section waveguide is real waveguide impedance, to realize the wideband high matching performance between waveguide synthesizer and two-way single-pole diode waveguide switch when input signal is not simultaneously present at the input end of waveguide synthesizer due to two-way alternation of two-way single-pole diode waveguide switch, meet the requirement of two-way horn feed amplitude and phase wideband matching for antenna and beam and single-beam working state, realize radar communication system mutual direction finding positioning function, etc.

Description

Technical Field

[0001] This invention belongs to the fields of radar microwave technology and antenna feeder technology, and in particular relates to a waveguide synthesizer and its broadband high matching implementation method. Background Technology

[0002] The existing multi-beam radar communication antenna system consists of an antenna reflector and a dual-channel horn feed. The dual-channel horn feed comprises dual E-plane sector horns, dual-channel unipolar diode waveguide switches, and a waveguide combiner. Each of the dual E-plane sector horns and dual-channel unipolar diode waveguide switches has a metal diaphragm of thickness t between its two channels, structurally separating them and preventing interference. Each dual-channel unipolar diode waveguide switch is a single-pole single-throw waveguide switch, belonging to a waveguide transmission structure. Its cross-sectional area is a4×b, where a4 is the width of the E-plane of the transmission waveguide and b is the width of the H-plane. A coaxial tuning block for the unipolar diode waveguide switch is located in the center of the width a4 of each waveguide switch. The input of the dual-channel horn feed is the dual E-plane sector horn opening, and its output is a single-channel waveguide opening, which is the combined output of the waveguide combiner. The input of the waveguide combiner is connected to the dual-channel unipolar diode waveguide switches, as shown in the attached diagram. Figure 1-3 As shown, when a reverse voltage is applied (i.e., the diode is reverse biased), the waveguide switch is turned on; when a forward voltage is applied (i.e., the diode is forward biased), the waveguide switch is turned off. The operation of the dual-channel horn feed is controlled by turning the dual-channel unipolar diode waveguide switch on and off. When both channels of the dual-channel horn feed are working simultaneously, input signals enter the waveguide synthesizer from both input channels, and the antenna system operates in a single-beam configuration. When only one channel of the dual-channel horn feed is working, only one input signal enters the waveguide synthesizer, and the antenna system operates in a single-beam configuration for that channel.

[0003] Waveguide synthesizers designed using existing technology, such as those shown in the attached document. Figure 3As shown, the waveguide synthesizer has two input signals entering its input terminals. The input section of the waveguide synthesizer consists of two waveguides with a cross-sectional diameter of a4×b and a length of L1 connected side-by-side. A metal diaphragm with a thickness of t and a length of L1 is placed between the two waveguides. The output section of the waveguide synthesizer consists of a waveguide with a cross-sectional diameter of a4×b and a length of L4. The input terminal cross-sectional diameter of the waveguide synthesizer is a1×b, and the synthesized output terminal cross-sectional diameter is a4×b, where a1 = 2a4 + t, where a4 is the E-plane (wide side) dimension of the transmission waveguide, and b is the H-plane (narrow side) dimension of the transmission waveguide. Half of the impedance of the two side-by-side waveguides in the input section of the waveguide synthesizer is given as... The load waveguide impedance of the waveguide synthesizer is calculated, and the waveguide impedance of one output channel of the waveguide synthesizer is the source waveguide impedance of the waveguide synthesizer. An impedance matching transformation section is designed between the input and output channels of the waveguide synthesizer to transform the load waveguide impedance of the waveguide synthesizer to the source waveguide impedance of the waveguide synthesizer. This design results in the waveguide synthesizer's matching degree with the dual-channel unipolar diode waveguide switch when the two input channels do not have signals at the same time. This does not meet the amplitude and phase broadband matching requirements of the dual-channel horn feed in the antenna beam and alternating single-channel single-beam operation states, which seriously affects the radar communication system's mutual direction finding and positioning, parameter correction and normalization, coordinate exchange, command and information exchange functions. Summary of the Invention

[0004] The purpose of this invention is to solve the problem caused by the inability of the existing waveguide synthesizer to meet the broadband matching requirements of the antenna and beam, as well as the amplitude and phase of the dual-channel horn feed, when the two channels of the dual-channel unipolar diode waveguide switch connected to the waveguide synthesizer are alternately turned on and off. This is because the matching degree between the waveguide synthesizer and the dual-channel unipolar diode waveguide switch cannot meet the requirements of the antenna and beam, as well as the single-channel beam operation state, when the two channels of the dual-channel horn feed are not simultaneously turned on and off.

[0005] To achieve the objective of this invention, a broadband high-matching waveguide synthesizer is disclosed, comprising a waveguide synthesizer and a dual-channel unipolar diode waveguide switch; the waveguide synthesizer is provided with a synthesizer output terminal, a waveguide synthesizer input terminal, a waveguide synthesizer input section, and a waveguide synthesizer output section; the dual-channel unipolar diode waveguide switch is provided with a dual-channel unipolar diode waveguide switch input terminal and a dual-channel unipolar diode waveguide switch output terminal; the waveguide synthesizer input terminal is connected to the dual-channel unipolar diode waveguide switch output terminal; a metal diaphragm of thickness t is disposed between the two channels of the dual-channel unipolar diode waveguide switch, the two channels are structurally separated from each other, and each channel is a waveguide transmission structure.

[0006] Furthermore, the cross-sectional diameter of each channel of the dual-channel unipolar diode waveguide switch is a4×b, where a4 is the E-plane (wide side) dimension of the transmission waveguide and b is the H-plane (narrow side) dimension of the transmission waveguide; the input section of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a1×b and a length of L1; the output section of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a4×b and a length of L4; the cross-sectional diameter of the input end of the waveguide synthesizer is a1×b, and the cross-sectional diameter of the synthesized output end of the waveguide synthesizer is a4×b, where a1=2a4+t.

[0007] Furthermore, the characteristic impedance of one waveguide of the dual-channel unipolar diode waveguide switch is Z0. At the input end of the waveguide synthesizer, the waveguide impedance of the two waveguides connected side by side at the output end of the dual-channel unipolar diode waveguide switch is equivalent to the two waveguides with characteristic impedance Z0 connected in parallel, which is half of Z0.

[0008] Furthermore, the load waveguide impedance Z of the waveguide synthesizer input section is set. L Based on the transmission line impedance equation, the waveguide length L1 of the waveguide synthesizer input segment is set so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance. The waveguide input impedance Zin of the waveguide synthesizer input segment is set as the load waveguide impedance of the waveguide synthesizer, and the waveguide characteristic impedance Z0 of the waveguide synthesizer output segment, i.e., one waveguide characteristic impedance, is set as the source waveguide impedance of the waveguide synthesizer. Based on the Chebyshev multi-section matching transformer, a second-stage impedance matching transformer segment is set between the waveguide synthesizer input segment and the waveguide synthesizer output segment, i.e., the first-stage impedance matching transformer segment with a cross-sectional diameter of a2×b and a length of L2. The transformation section, and the second-stage impedance transformation section with a cross-sectional diameter of a3×b and a length of L3, transform the load waveguide impedance Zin of the waveguide synthesizer to the source waveguide impedance Z0 of waveguide synthesizer 1. When the two channels of the dual-channel unipolar diode waveguide switch alternately turn on and off, and the two channels of the waveguide synthesizer input connected to the output of the dual-channel unipolar diode waveguide switch do not have signals input at the same time, the wideband high amplitude matching between the waveguide synthesizer and the dual-channel unipolar diode waveguide switch is achieved, which meets the wideband high matching requirements of the amplitude and phase of the dual-channel horn feed for the antenna and beam, as well as the single-channel beam operation.

[0009] To achieve the objectives of this invention, a method for implementing a broadband high-matched waveguide synthesizer is also disclosed, comprising the following steps:

[0010] Step 1: Calculate the characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L ;

[0011] Step 2: Calculate the characteristic impedance Z of the waveguide input segment of the waveguide synthesizer. C ;

[0012] Step 3: Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance.

[0013] Step 4: Set the waveguide input impedance Zin of the waveguide synthesizer input segment to the load waveguide impedance of the waveguide synthesizer input segment, so that the load waveguide impedance Zin of the waveguide synthesizer input segment is transformed to the source waveguide impedance Z0 of the waveguide synthesizer.

[0014] Furthermore, step 1 is detailed as follows:

[0015] The characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch is calculated using the following formula.

[0016]

[0017] Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the center frequency wavelength of the operating frequency band, and the absolute operating bandwidth of the waveguide synthesizer is 1 GHz; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L .

[0018] Furthermore, step 2 is detailed as follows:

[0019] The characteristic impedance Z of the waveguide input segment of the waveguide synthesizer is calculated using the following formula. C

[0020]

[0021] Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the wavelength of the center frequency of the operating band, and t is the thickness of the metal diaphragm between the two paths of the dual-path unipolar diode waveguide switch.

[0022] Furthermore, step 3 is detailed below:

[0023] Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance. The waveguide input impedance Zin of the waveguide synthesizer input segment is calculated using the following transmission line impedance equation.

[0024]

[0025] Where j is the symbol for the imaginary part of the complex number, tg is the symbol for the tangent, and β is the transmission constant of the waveguide synthesizer input segment.

[0026] Furthermore, step 4 is detailed below:

[0027] The waveguide input impedance Zin of the waveguide synthesizer input section is set as the load waveguide impedance of the waveguide synthesizer input section, and the waveguide output section, i.e., one waveguide impedance Z0, is set as the source waveguide impedance of the waveguide synthesizer. Based on the Chebyshev multi-stage matching transformer, a two-stage impedance matching transformer section is set between the waveguide synthesizer input section and the waveguide synthesizer output section. That is, a first-stage impedance transformer section with a cross-sectional diameter of a2×b and a length of L2 and a second-stage impedance transformer section with a cross-sectional diameter of a3×b and a length of L3 are set to transform the load waveguide impedance Zin of the waveguide synthesizer input section to the source waveguide impedance Z0 of the waveguide synthesizer. The number of impedance transformer stages depends on the ratio of the source waveguide impedance Z0 to the load waveguide impedance Zin, the relative operating bandwidth, and the VSWR requirement of the designed waveguide synthesizer performance index. This application uses the design of a two-stage impedance matching transformer section as an example only for the sake of illustration.

[0028] Compared with the prior art, the significant advancement of this invention lies in the fact that the waveguide impedance of the two waveguides connected side-by-side at the output of the dual-channel unipolar diode waveguide switch is used as the load waveguide impedance Z of the input section of the waveguide synthesizer. L The waveguide length L1 of the input section of the waveguide synthesizer is designed, and the input impedance Zin of the input section of the waveguide synthesizer is a real waveguide impedance. This ensures that, due to the alternating conduction and cutoff of the two dual-channel unipolar diode waveguide switches, the waveguide synthesizer has a high matching degree with the dual-channel unipolar diode waveguide switches when the two input channels do not have signals at the same time. This satisfies the amplitude and phase broadband matching requirements of the dual-channel horn feed for the antenna and beam, as well as the single-channel beam operating state. It enables the radar communication system to perform functions such as mutual direction finding and positioning, parameter correction and normalization, coordinate exchange, command and information exchange.

[0029] To more clearly illustrate the functional characteristics and structural parameters of the present invention, further explanation is provided below in conjunction with the accompanying drawings and specific embodiments. Attached Figure Description

[0030] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this application, illustrate exemplary embodiments of the invention and, together with their description, serve to explain the invention and do not constitute an undue limitation thereof. In the drawings:

[0031] Figure 1 This is a schematic diagram showing the connection between a waveguide synthesizer and a dual-channel unipolar diode waveguide switch;

[0032] Figure 2 This is a schematic diagram of a dual-channel unipolar diode waveguide switch;

[0033] Figure 3 This is a schematic diagram of a waveguide synthesizer designed using existing technology;

[0034] Figure 4This is a schematic diagram of a broadband high-matching waveguide synthesizer provided by the present invention;

[0035] Figure 5 This is a schematic diagram of the implementation method of a broadband high-matching waveguide synthesizer provided by the present invention;

[0036] The labels in the figure are as follows: 1-waveguide synthesizer, 2-dual-channel unipolar diode waveguide switch, 3-dual-channel unipolar diode waveguide switch coaxial tuning block, 4-input terminal of dual-channel unipolar diode waveguide switch, 5-synthesized output terminal of waveguide synthesizer, 6-output terminal of dual-channel unipolar diode waveguide switch, 7-metal diaphragm, 8-input terminal of waveguide synthesizer, 9-input segment of waveguide synthesizer, 10-first-stage impedance transformation segment, 11-second-stage impedance transformation segment, 12-output segment of waveguide synthesizer. Detailed Implementation

[0037] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] The existing multi-beam radar communication antenna system consists of an antenna reflector and a dual-channel horn feed. The dual-channel horn feed comprises dual E-plane sector horns, dual-channel unipolar diode waveguide switches 2, and a waveguide combiner 1. Each of the dual E-plane sector horns and dual-channel unipolar diode waveguide switches 2 has a metal diaphragm 7 of thickness t between its two channels. The two channels are structurally separated and do not interfere with each other. Each of the dual-channel unipolar diode waveguide switches 2 is a single-pole single-throw waveguide switch. This is a waveguide transmission structure with a cross-sectional area of ​​a4×b, where a4 is the E-plane (wide side) of the transmission waveguide and b is the H-plane (narrow side). A coaxial tuning block 3 for a unipolar diode waveguide switch is located in the center of the wide side a4 of each waveguide switch. The dual-channel horn feed input is a dual-channel E-plane fan-shaped horn opening, and its output is a single-channel waveguide opening, which is the combined output terminal 5 of the waveguide combiner. The waveguide combiner input terminal 8 is connected to the dual-channel unipolar diode waveguide switch 2, as shown in the attached diagram. Figure 1-3 As shown, when a reverse voltage is applied (i.e., the diode is reverse biased), the waveguide switch is turned on; when a forward voltage is applied (i.e., the diode is forward biased), the waveguide switch is turned off. The operation of the dual-channel horn feed is controlled by turning the dual-channel unipolar diode waveguide switch 2 on and off. When both channels of the dual-channel horn feed are working simultaneously, input signals enter the waveguide synthesizer 1 from both input terminals 8, and the antenna system operates in a single-beam mode. When only one channel of the dual-channel horn feed is working, only one input signal enters the waveguide synthesizer 1 from the input terminal 8, and the antenna system operates in a single-beam mode for that channel.

[0039] Waveguide synthesizers designed using existing technology, such as those shown in the attached document. Figure 3 As shown, both input channels of the waveguide synthesizer 1 have input signals entering it. The input section 9 of the waveguide synthesizer consists of two waveguides with a cross-sectional diameter of a4×b and a length of L1 connected side by side. A metal diaphragm 7 with a thickness of t and a length of L1 is located between the two waveguides. The output section 12 of the waveguide synthesizer consists of a waveguide with a cross-sectional diameter of a4×b and a length of L4. The input channel 8 of the waveguide synthesizer has a cross-sectional diameter of a1×b, and the output channel 5 has a cross-sectional diameter of a4×b, where a1 = 2a4 + t, and a4 is the E-plane (wide side) dimension of the transmission waveguide, and b is the H-plane (narrow side) dimension of the transmission waveguide. Half of the impedance of the two side-by-side waveguides in the input section 9 of the waveguide synthesizer is the design impedance. The load waveguide impedance of waveguide synthesizer 1 and the waveguide impedance of one output section 12 of waveguide synthesizer 1 are the source waveguide impedance of waveguide synthesizer 1. An impedance matching transformation section is designed between the input section 9 and the output section 12 of waveguide synthesizer 1 to transform the load waveguide impedance of waveguide synthesizer 1 to the source waveguide impedance of waveguide synthesizer 1. This design makes the matching degree between waveguide synthesizer 1 and the dual-channel unipolar diode waveguide switch 2 when the two input channels of waveguide synthesizer 1 do not have signals input at the same time not meet the amplitude and phase broadband matching requirements of the dual-channel horn feed in the antenna beam and alternating single-channel single-beam operation state. This seriously affects the functions of radar communication system such as mutual direction finding and positioning, parameter correction and normalization, coordinate exchange, command and information exchange.

[0040] like Figure 1 , Figure 2 , Figure 4 As shown, a broadband high-matching waveguide synthesizer includes a waveguide synthesizer 1 and a dual-channel unipolar diode waveguide switch 2. The waveguide synthesizer 1 is provided with a waveguide synthesizer output terminal 5, a waveguide synthesizer input terminal 8, a waveguide synthesizer input section 9, and a waveguide synthesizer output section 12. The dual-channel unipolar diode waveguide switch 2 is provided with a dual-channel unipolar diode waveguide switch input terminal 4 and a dual-channel unipolar diode waveguide switch output terminal 6. The waveguide synthesizer input terminal 8 is connected to the dual-channel unipolar diode waveguide switch output terminal 6. A metal diaphragm 7 with a thickness of t is provided between the two channels of the dual-channel unipolar diode waveguide switch 2. The two channels are structurally separated from each other, and each channel is a waveguide transmission structure.

[0041] Specifically, the cross-sectional diameter of each channel of the dual-channel unipolar diode waveguide switch 2 is a4×b, where a4 is the E-plane (wide side) dimension of the transmission waveguide and b is the H-plane (narrow side) dimension of the transmission waveguide; the input section 9 of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a1×b and a length of L1; the output section 12 of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a4×b and a length of L4; the input terminal 8 of the waveguide synthesizer has a cross-sectional diameter of a1×b, and the synthesized output terminal 5 of the waveguide synthesizer has a cross-sectional diameter of a4×b, where a1=2a4+t.

[0042] Specifically, the characteristic impedance of one waveguide of the dual-channel unipolar diode waveguide switch 2 is Z0. At the input terminal 8 of the waveguide synthesizer and the output terminal 6 of the dual-channel unipolar diode waveguide switch, the waveguide impedance of the two waveguides connected in parallel is equivalent to the two waveguides with characteristic impedance Z0 connected in parallel, which is half of Z0.

[0043] Specifically, the load waveguide impedance Z of waveguide synthesizer input segment 9 is set. L Based on the transmission line impedance equation, the waveguide length L1 of waveguide input segment 9 of the waveguide synthesizer is set so that the waveguide input impedance Zin of waveguide input segment 9 is a real waveguide impedance. The waveguide input impedance Zin of waveguide input segment 9 is set as the load waveguide impedance of waveguide synthesizer 1, and the waveguide characteristic impedance Z0 of waveguide output segment 12, i.e., one waveguide, is set as the source waveguide impedance of waveguide synthesizer 1. Based on the Chebyshev multi-section matching transformer, a second-stage impedance matching transformer segment is set between waveguide input segment 9 and waveguide output segment 12, i.e., the first-stage impedance matching transformer segment with a cross-sectional diameter of a2×b and a length of L2. Transformation segment 10 and the second-stage impedance transformation segment 11 with a cross-sectional diameter of a3×b and a length of L3 transform the load waveguide impedance Zin of waveguide synthesizer 1 to the source waveguide impedance Z0 of waveguide synthesizer 1. When the two channels of the dual-channel unipolar diode waveguide switch 2 are alternately turned on and off, and the two channels of the waveguide synthesizer input terminal 8 connected to the output terminal 6 of the dual-channel unipolar diode waveguide switch do not have signal input at the same time, the wideband high amplitude matching between waveguide synthesizer 1 and dual-channel unipolar diode waveguide switch 2 is achieved, which meets the wideband high matching requirements of amplitude and phase of dual-channel horn feed for antenna and beam and single-channel beam operation.

[0044] like Figure 5 As shown, a method for implementing a broadband high-matched waveguide synthesizer includes the following steps:

[0045] Step 1: Calculate the characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L ;

[0046] Step 2: Calculate the characteristic impedance Z of the waveguide input segment of the waveguide synthesizer.C ;

[0047] Step 3: Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance.

[0048] Step 4: Set the waveguide input impedance Zin of the waveguide synthesizer input segment to the load waveguide impedance of the waveguide synthesizer input segment, so that the load waveguide impedance Zin of the waveguide synthesizer input segment is transformed to the source waveguide impedance Z0 of the waveguide synthesizer.

[0049] Specifically, step 1 is as follows:

[0050] The characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch is calculated using the following formula.

[0051]

[0052] Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the center frequency wavelength of the operating frequency band, and the absolute operating bandwidth of the waveguide synthesizer is 1 GHz; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L .

[0053] Specifically, step 2 is as follows:

[0054] The characteristic impedance Z of the waveguide input segment of the waveguide synthesizer is calculated using the following formula. C

[0055]

[0056] Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the wavelength of the center frequency of the operating band, and t is the thickness of the metal diaphragm between the two paths of the dual-path unipolar diode waveguide switch.

[0057] Specifically, step 3 is as follows:

[0058] Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance. The waveguide input impedance Zin of the waveguide synthesizer input segment is calculated using the following transmission line impedance equation.

[0059]

[0060] Where j is the symbol for the imaginary part of the complex number, tg is the symbol for the tangent, and β is the transmission constant of the waveguide synthesizer input segment.

[0061] Specifically, step 4 is as follows:

[0062] The waveguide input impedance Zin of the waveguide synthesizer input section is set as the load waveguide impedance of the waveguide synthesizer input section, and the waveguide output section, i.e., one waveguide impedance Z0, is set as the source waveguide impedance of the waveguide synthesizer. Based on the Chebyshev multi-stage matching transformer, a two-stage impedance matching transformer section is set between the waveguide synthesizer input section and the waveguide synthesizer output section. That is, a first-stage impedance transformer section with a cross-sectional diameter of a2×b and a length of L2 and a second-stage impedance transformer section with a cross-sectional diameter of a3×b and a length of L3 are set, so that the load waveguide impedance Zin of the waveguide synthesizer input section is transformed to the source waveguide impedance Z0 of the waveguide synthesizer. The number of impedance transformer stages depends on the ratio of the source waveguide impedance Z0 to the load waveguide impedance Zin, the relative operating bandwidth, and the VSWR requirement of the designed waveguide synthesizer performance index. This application uses the design of a two-stage impedance matching transformer section as an example only for the sake of illustration.

[0063] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0064] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A broadband high-matching waveguide synthesizer, characterized in that, It includes a waveguide synthesizer (1) and a dual-channel unipolar diode waveguide switch (2); the waveguide synthesizer (1) is provided with a waveguide synthesizer output terminal (5), a waveguide synthesizer input terminal (8), a waveguide synthesizer input section (9) and a waveguide synthesizer output section (12); the dual-channel unipolar diode waveguide switch (2) is provided with a dual-channel unipolar diode waveguide switch input terminal (4) and a dual-channel unipolar diode waveguide switch output terminal (6); the waveguide synthesizer input terminal (8) is connected to the dual-channel unipolar diode waveguide switch output terminal (6); the dual-channel unipolar diode waveguide switch (2) has a metal diaphragm (7) of thickness t between its two channels, the two channels are structurally separated from each other and each channel is a waveguide transmission structure.

2. The broadband high-matching waveguide synthesizer according to claim 1, characterized in that, The cross-sectional diameter of each of the dual-channel unipolar diode waveguide switches (2) is a4×b, where a4 is the E-plane of the transmission waveguide (i.e., the wide side dimension) and b is the H-plane of the transmission waveguide (i.e., the narrow side dimension); the input section (9) of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a1×b and a length of L1; the output section (12) of the waveguide synthesizer is a waveguide with a cross-sectional diameter of a4×b and a length of L4; the input end (8) of the waveguide synthesizer has a cross-sectional diameter of a1×b, and the output end (5) of the waveguide synthesizer has a cross-sectional diameter of a4×b, where a1=2a4+t.

3. A broadband high-matching waveguide synthesizer according to claim 2, characterized in that, The characteristic impedance of one waveguide of the dual-channel unipolar diode waveguide switch (2) is Z0. At the input end (8) of the waveguide synthesizer, the waveguide impedance of the two waveguides connected in parallel at the output end (6) of the dual-channel unipolar diode waveguide switch is equivalent to the two waveguides with characteristic impedance Z0 connected in parallel, which is half of Z0.

4. A broadband high-matching waveguide synthesizer according to claim 3, characterized in that, Set the load waveguide impedance Z of the waveguide synthesizer input section (9). L Based on the transmission line impedance equation, the waveguide length L1 of the waveguide input section (9) of the waveguide synthesizer is set so that the waveguide input impedance Zin of the waveguide input section (9) of the waveguide synthesizer is a real waveguide impedance; the waveguide input impedance Zin of the waveguide input section (9) of the waveguide synthesizer is set as the load waveguide impedance of the waveguide synthesizer (1), and the characteristic impedance Z0 of the waveguide output section (12) of the waveguide synthesizer is set as the source waveguide impedance of the waveguide synthesizer (1); based on the Chebyshev multi-section matching transformer, a second-stage impedance matching transformer section is set between the waveguide input section (9) and the waveguide output section (12) of the waveguide synthesizer, that is, the first-stage impedance transformer with a cross-sectional diameter of a2×b and a length of L2. The transition section (10) and the second-stage impedance transformation section (11) with a cross-sectional diameter of a3×b and a length of L3 transform the load waveguide impedance Zin of the waveguide synthesizer (1) to the source waveguide impedance Z0 of the waveguide synthesizer (1). When the two paths of the dual-path unipolar diode waveguide switch (2) are alternately turned on and off, and the two paths of the waveguide synthesizer input terminal (8) connected to the output terminal (6) of the dual-path unipolar diode waveguide switch do not have signal input at the same time, the wideband high amplitude matching of the waveguide synthesizer (1) and the dual-path unipolar diode waveguide switch (2) is realized, which satisfies the wideband high matching requirements of the amplitude and phase of the dual-path horn feed for the antenna and beam as well as the single-path beam working state.

5. A method for implementing a broadband high-matching waveguide synthesizer, said method being based on a broadband high-matching waveguide synthesizer according to any one of claims 1-4, characterized in that, Includes the following steps: Step 1: Calculate the characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L ; Step 2: Calculate the characteristic impedance Z of the waveguide input segment of the waveguide synthesizer. C ; Step 3: Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance. Step 4: Set the waveguide input impedance Zin of the waveguide synthesizer input segment to the load waveguide impedance of the waveguide synthesizer input segment, so that the load waveguide impedance Zin of the waveguide synthesizer input segment is transformed to the source waveguide impedance Z0 of the waveguide synthesizer.

6. The method for implementing a broadband high-matched waveguide synthesizer according to claim 5, characterized in that, Step 1 is as follows: The characteristic impedance Z0 of one waveguide of the dual-channel unipolar diode waveguide switch is calculated using the following formula. Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the center frequency wavelength of the operating frequency band, and the absolute operating bandwidth of the waveguide synthesizer is 1 GHz; The load waveguide impedance Z is set as the input section of the waveguide synthesizer. L .

7. The method for implementing a broadband high-matched waveguide synthesizer according to claim 5, characterized in that, Step 2 is as follows: The characteristic impedance Z of the waveguide input segment of the waveguide synthesizer is calculated using the following formula. C Where a4 is the E-plane (wide side) dimension of the transmission waveguide, b is the H-plane (narrow side) dimension of the transmission waveguide, λ0 is the wavelength of the center frequency of the operating band, and t is the thickness of the metal diaphragm between the two paths of the dual-path unipolar diode waveguide switch.

8. A method for implementing a broadband high-matched waveguide synthesizer according to claim 5, characterized in that, Step 3 is as follows: Set the waveguide length L1 of the waveguide synthesizer input segment so that the waveguide input impedance Zin of the waveguide synthesizer input segment is a real waveguide impedance. The waveguide input impedance Zin of the waveguide synthesizer input segment is calculated using the following transmission line impedance equation. Where j is the symbol for the imaginary part of the complex number, tg is the symbol for the tangent, and β is the transmission constant of the waveguide synthesizer input segment.

9. A method for implementing a broadband high-matched waveguide synthesizer according to claim 5, characterized in that, Step 4 is as follows: The waveguide input impedance Zin of the waveguide synthesizer input segment is set as the load waveguide impedance of the waveguide synthesizer input segment, and the waveguide output segment, i.e., one waveguide impedance Z0, is set as the source waveguide impedance of the waveguide synthesizer. Based on the Chebyshev multi-section matching transformer, a two-stage impedance matching transformer segment is set between the waveguide synthesizer input segment and the waveguide synthesizer output segment. That is, a first-stage impedance transformer segment with a cross-sectional diameter of a2×b and a length of L2 and a second-stage impedance transformer segment with a cross-sectional diameter of a3×b and a length of L3 are set, so that the load waveguide impedance Zin of the waveguide synthesizer input segment is transformed to the source waveguide impedance Z0 of the waveguide synthesizer.

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