Display device and manufacturing method thereof

Abstract

A display device and a method for manufacturing the same are provided. The display device includes: a first substrate including a first emission area and a second emission area; a first light-emitting element and a second light-emitting element, the first light-emitting element overlapping the first emission region, and the second light-emitting element overlapping the second emission region; a light transmission layer disposed on the first light emitting element; a first wavelength conversion layer disposed on the second light emitting element; a capping layer disposed on the light transmission layer and the first wavelength conversion layer; a low refractive index layer disposed on the capping layer; and a second substrate disposed on the low refractive index layer, in which the capping layer includes a first surface facing the low refractive index layer and a second surface opposite to the first surface, in the first emission region, the second surface of the capping layer includes a capping concave-convex pattern, and in the second emission region, the second surface of the capping layer is substantially flat.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0096101 filed in the Korean Intellectual Property Office on July 24, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Embodiments relate to a display device and a method for manufacturing the display device. Background Art

[0003] As multimedia technology develops, the importance of display devices has steadily increased. Therefore, various types of display devices, such as liquid crystal display (LCD) devices and organic light emitting diode (OLED) display devices, have been developed.

[0004] Among the display devices, the self-luminous display device includes a self-luminous element such as an organic light-emitting element. The self-luminous element may include two opposing electrodes and a light-emitting layer between the two opposing electrodes. In the case of using an organic light-emitting element as the self-luminous element, electrons and holes from the two electrodes are recombined in the light-emitting layer to generate excitons, and the excitons generate light when they transition from an excited state to a ground state.

[0005] The display device may include a color conversion element that realizes color by receiving light from an organic light emitting element or the like. For example, the color conversion element receives blue light from the organic light emitting element and emits blue light, green light, and red light, respectively, so that images with various colors can be visually recognized. The color conversion element may be provided on the display device in the form of a separate substrate, or may be formed by being directly integrated with an element in the display device. Summary of the invention

[0006] The embodiment provides a display device having high light efficiency and high brightness.

[0007] Embodiments also provide a method of manufacturing a display device in which manufacturing time is reduced.

[0008] However, aspects of the disclosure are not limited to the aspects set forth herein. The above and other aspects of the disclosure will become more apparent to those skilled in the art to which the disclosure pertains by referring to the detailed description of the disclosure given below.

[0009] According to the disclosed aspects, a display device may include: a first substrate, including a first emission area and a second emission area; a first light-emitting element and a second light-emitting element, the first light-emitting element is overlapped with the first emission area, the second light-emitting element is overlapped with the second emission area, and the first light-emitting element and the second light-emitting element are arranged on the first substrate; a light-transmitting layer is arranged on the first light-emitting element; a first wavelength conversion layer is arranged on the second light-emitting element; a covering layer is arranged on the light-transmitting layer and the first wavelength conversion layer; a low refractive index layer is arranged on the covering layer; and a second substrate is arranged on the low refractive index layer, wherein the covering layer may include a first surface facing the low refractive index layer and a second surface opposite to the first surface, in the first emission area, the second surface of the covering layer may include a covering concave-convex pattern, and in the second emission area, the second surface of the covering layer may be substantially flat.

[0010] The first wavelength conversion layer may include a light scatterer, and the light transmission layer may not include the light scatterer.

[0011] The covering concavo-convex pattern may include a plurality of concave portions, and each of the plurality of concave portions of the covering concavo-convex pattern may be concave in a thickness direction.

[0012] The capping concavo-convex pattern may include a plurality of island patterns separated from each other.

[0013] The covering concavo-convex pattern may include a linear pattern extending in one direction.

[0014] A cross-section of each of the plurality of concave portions covering the concavo-convex pattern may have a semicircular shape, a semi-elliptical shape, or a portion of a circular shape.

[0015] A depth of each of the plurality of concave portions covering the concave-convex pattern may be equal to or greater than about 0.1 μm, and a width of each of the plurality of concave portions covering the concave-convex pattern may be equal to or greater than about 3 μm.

[0016] A distance between adjacent concave portions may be equal to or greater than about 1.5 μm.

[0017] The refractive index of the light transmitting layer may be in the range of about 1.40 to about 1.70.

[0018] The refractive index of the cover layer may be greater than that of the low refractive index layer, and the difference between the refractive index of the cover layer and the refractive index of the low refractive index layer may be in the range of about 0.30 to about 0.60.

[0019] The refractive index of the cover layer may be in the range of about 1.40 to about 1.70, and the refractive index of the low refractive index layer may be in the range of about 1.10 to about 1.30.

[0020] An upper surface of the light transmission layer may be in contact with the second surface of the cover layer, and may include a concavo-convex pattern engaged with the cover concavo-convex pattern.

[0021] The second surface of the cover layer may be in contact with the upper surface of the first wavelength conversion layer in the second emission region, and the upper surface of the first wavelength conversion layer may be substantially flat.

[0022] The first wavelength conversion layer may include a base resin and a first wavelength conversion shifter.

[0023] According to the disclosed aspects, a display device may include: a first substrate, including a first emission area and a second emission area; a first light-emitting element and a second light-emitting element, the first light-emitting element is overlapped with the first emission area, the second light-emitting element is overlapped with the second emission area, and the first light-emitting element and the second light-emitting element are arranged on the first substrate; a light-transmitting layer, arranged on the first light-emitting element; a first wavelength conversion layer, arranged on the second light-emitting element; a covering layer, arranged on the light-transmitting layer and the first wavelength conversion layer; a low refractive index layer, arranged on the covering layer; a first color filter, arranged on the low refractive index layer, overlapping with the first emission area, and including a light scatterer; a second color filter, arranged on the low refractive index layer, and overlapping with the second emission area; and a second substrate, arranged on the first color filter and the second color filter.

[0024] The first wavelength conversion layer may include a light scatterer, and the light transmission layer and the second color filter may not include the light scatterer.

[0025] The cover layer may include a first surface facing the low refractive index layer and a second surface opposite to the first surface, the second surface of the cover layer may include a covering concave-convex pattern in the first emission region, and the second surface of the cover layer may be substantially flat in the second transmission region.

[0026] According to the disclosed aspects, a method for manufacturing a display device may include: preparing a substrate, the substrate including a first transmission area, a second transmission area, and a light blocking area surrounding the first transmission area and the second transmission area; forming a color filter layer on the substrate, forming a low refractive index layer on the color filter layer, and forming a covering layer on the low refractive index layer; forming a covering concave-convex pattern on an upper surface of the covering layer in the first transmission area; forming a dam pattern layer on an upper surface of the covering layer in the light blocking area; and forming a light transmission layer on an upper surface of the covering layer in the first transmission area.

[0027] The method for manufacturing a display device may further include forming a first wavelength conversion pattern layer on an upper surface of the cover layer in the second emission region between the step of forming the bank pattern layer and the step of forming the light transmission layer or after the step of forming the light transmission layer.

[0028] The step of forming a color filter layer on a substrate may include: forming a first color filter on the substrate to overlap with the first transmission area and not overlap with the second transmission area; and forming a second color filter on the substrate and the first color filter to overlap with the second transmission area and not overlap with the first transmission area, wherein the first color filter may include a light scatterer and the second color filter may not include a light scatterer.

[0029] In the display device and the method of manufacturing the display device according to the embodiment, the cover layer disposed on the light transmission layer may include a concavo-convex pattern, so that the display device may have high light efficiency and excellent brightness characteristics.

[0030] Furthermore, in the display device and the method of manufacturing the display device according to the embodiment, a process of injecting a light scatterer into a light transmission layer may be omitted, and a manufacturing process time may be reduced.

[0031] However, the disclosed effects are not limited to the aforementioned effects, and various other effects are included in the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects and features of the disclosure will become more apparent by describing the disclosed embodiments in detail with reference to the accompanying drawings, in which: Figure 1 is a schematic perspective view showing a display device according to an embodiment; Figure 2 It is shown along Figure 1 A schematic cross-sectional view of a section taken along line X1-X1'; Figure 3 is a schematic plan view of a display device according to an embodiment; Figure 4 yes Figure 3 An enlarged schematic plan view of a region A1; Figure 5 It is shown along Figure 4 A schematic cross-sectional view of a section taken along line X2-X2'; Figure 6 yes Figure 5 An enlarged schematic plan view of an area A2; Figure 7 is a schematic perspective view showing a second covering layer in a first transmission region of a display device according to an embodiment; Figure 8 is a schematic perspective view showing a second covering layer in a first transmission region of a display device according to another embodiment; Fig. 9 It is shown along Figure 7 and Figure 8 A schematic cross-sectional view of a section taken along line X3-X3'; Fig.10 is a schematic cross-sectional view of a display device according to another embodiment; Fig.11 yes Fig.10 An enlarged schematic diagram of area A3; Fig.12 is a schematic cross-sectional view of a display device according to yet another embodiment; and Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 is a schematic diagram for explaining a process of manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0033] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various embodiments or implementations of the invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the device or method disclosed herein. However, it is clear that various embodiments can be practiced without these specific details or with one or more equivalent arrangements. Here, various embodiments do not have to be exclusive, nor do they have to limit disclosure. For example, the specific shape, configuration and characteristics of the embodiment can be used or implemented in another embodiment.

[0034] Unless otherwise specified, the illustrated embodiments should be understood to provide features of the invention. Therefore, without departing from the scope of the invention, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be further combined, separated, interchanged and / or rearranged.

[0035] The use of cross hatching and / or shading is usually provided in the drawings to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the shown elements and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiments can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described sequence. In addition, the same reference numerals indicate the same elements.

[0036] When an element or layer is referred to as being "on" another element or layer, "connected to" or "bonded to" another element or layer, it may be directly on, directly connected to or directly bonded to the other element or layer, or there may be an intervening element or layer. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly bonded to" another element or layer, there is no intervening element or intervening layer. For this purpose, the term "connection" may refer to a physical connection, an electrical connection and / or a fluid connection with or without an intervening element. In addition, the axis of the first direction DR1, the axis of the second direction DR2, and the axis of the third direction DR3 are not limited to the three axes of a rectangular coordinate system (such as, the X axis, the Y axis, and the Z axis), and may be interpreted in a broader sense. For example, the axis of the first direction DR1, the axis of the second direction DR2, and the axis of the third direction DR3 may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of A and B" may be understood to mean only A, only B, or any combination of A and B. Furthermore, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as any combination of only X, only Y, only Z, or two or more of X, Y, and Z. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0037] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the disclosed teachings, the first element discussed below may be referred to as the second element.

[0038] For descriptive purposes, spatially relative terms such as "below," "beneath," "under," "lower," "above," "upper," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein to describe the relationship of one element to another element as shown in the accompanying drawings. In addition to the orientation depicted in the accompanying drawings, spatially relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is turned over, then an element described as "below" or "below" other elements or features will subsequently be oriented to be "above" the other elements or features. Thus, the term "below" can cover both above and below orientations. In addition, the device can be oriented otherwise (e.g., rotated 90 degrees or in other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.

[0039] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0040] Figure 1 is a schematic perspective view showing a display device 1 according to the embodiment. Figure 2 It is shown along Figure 1 A schematic cross-sectional view of a section taken along line X1-X1'. Figure 3 is a schematic plan view of a display device 1 according to the embodiment.

[0041] Reference Figure 1 and Figure 2 The display device 1 according to the embodiment can be applied to portable electronic devices such as mobile phones, smart phones, tablet personal computers, mobile communication terminals, electronic organizers, electronic books, portable multimedia players (PMP), navigation systems, or ultra-mobile PCs (UMPCs). In another example, the display device 1 according to the embodiment can be applied as a display unit of a television, a laptop computer, a monitor, a billboard, or an Internet of Things (IoT) terminal. These are only suggested as examples, but the display device 1 can also be applied to other electronic devices without departing from the disclosure.

[0042] The first direction DR1, the second direction DR2 and the third direction DR3 are as follows: Figure 1 The first direction DR1 and the second direction DR2 may be perpendicular to each other, the first direction DR1 and the third direction DR3 may be perpendicular to each other, and the second direction DR2 and the third direction DR3 may be perpendicular to each other. It will be understood that the first direction DR1 refers to the vertical direction in the drawings, the second direction DR2 refers to the horizontal direction in the drawings, and the third direction DR3 refers to the upward and downward directions (i.e., the thickness direction) in the drawings. In the following disclosure, unless otherwise specified, a "direction" may refer to two directions extending along the direction. In addition, when it is desired to distinguish between two "directions" extending on both sides (for example, opposite sides), one side will be referred to as "one side in the direction" and the other side will be referred to as "the other side in the direction". With reference to Figure 1 , the direction pointed by the arrow is referred to as one side, and the opposite direction is referred to as the other side. In addition, the third direction DR3 may be referred to as a thickness direction.

[0043] Hereinafter, in order to simplify the description, when referring to the surface of the display device 1 or each member constituting the display device 1, the surface facing one side in the direction in which an image is displayed (for example, the third direction DR3) is referred to as the top surface, and the surface opposite to the surface is referred to as the bottom surface. However, the embodiment is not limited thereto, and the surface and the other surface of the member may be referred to as the front surface and the rear surface, respectively. When describing the relative position of each of the members of the display device 1, one side of the third direction DR3 may be referred to as the upper side, and the other side of the third direction DR3 may be referred to as the lower side.

[0044] The display device 1 may have a three-dimensional shape. For example, the display device 1 may have a rectangular parallelepiped shape or a three-dimensional shape similar thereto. In an embodiment, the display device 1 according to the embodiment may have a planar shape similar to a quadrilateral shape. For example, Figure 1 As shown in , the display device 1 according to the embodiment may have a planar shape similar to a quadrilateral shape having short sides in the first direction DR1 and long sides in the second direction DR2, but the embodiment is not limited thereto. For example, in the planar shape of the display device 1 according to the embodiment, the corner where the short side in the first direction DR1 and the long side in the second direction DR2 meet may be formed into a circle with a certain curvature, or may be formed into a right angle, or may not be limited to the quadrilateral shape, and may be formed into a shape similar to other polygonal shapes, a circular shape, or an elliptical shape.

[0045] The display device 1 may further include a display panel 10, a flexible circuit board FPC, and a driving chip IC. The display panel 10 may include a display area DA in which an image is displayed and a non-display area NDA in which an image is not displayed. In an embodiment, the non-display area NDA may surround an edge portion of the display area DA, but the embodiment is not limited thereto. Figure 1 , the image displayed in the display area DA can be viewed by the user on one side in the third direction DR3.

[0046] like Figure 2 As shown in , the display panel 10 may include a light emitting portion 100 and a light transmitting portion 300 facing the light emitting portion 100 , and may further include a sealing member 700 combining the light emitting portion 100 and the light transmitting portion 300 , and a filling portion 500 filled between the light emitting portion 100 and the light transmitting portion 300 .

[0047] The light-emitting portion 100 may include elements and circuits for displaying images in the display area DA (e.g., pixel circuits such as switching elements, a pixel defining layer 170 defining an emission area and a non-emission area, and a self-luminous element), which will be described later. In an embodiment, the self-luminous element may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, an inorganic material-based micro light-emitting diode (e.g., a micro-LED), and an inorganic material-based light-emitting diode having a nanometer size (e.g., a nano-LED). Hereinafter, in order to simplify the description, the case where the self-luminous element is an organic light-emitting element will be described as an example.

[0048] The light transmission part 300 may be positioned on the light emitting part 100 and may face the light emitting part 100. In an embodiment, the light transmission part 300 may include a color conversion pattern layer for converting the color of incident light emitted from the light emitting part 100 and irradiated to the light transmission part 300. In an embodiment, the light transmission part 300 may include at least one of a color filter layer 320 and a light transmission member to be described later as the color conversion pattern layer. In an embodiment, the light transmission part 300 may include both the color filter layer 320 and the light transmission member. The light transmission member may include at least one of a wavelength conversion shifter and a light diffuser as will be described later.

[0049] The sealing member 700 may be positioned between the light emitting portion 100 and the light transmitting portion 300 in the non-display area NDA. The sealing member 700 may be disposed along edge portions of the light emitting portion 100 and the light transmitting portion 300 in the non-display area NDA to surround the display area DA in a plan view. The light emitting portion 100 and the light transmitting portion 300 may be coupled to each other via the sealing member 700.

[0050] In an embodiment, the sealing member 700 may be made of an organic material. For example, the sealing member 700 may be made of an epoxy resin, but the embodiment is not limited thereto. In another embodiment, the sealing member 700 may be applied in the form of a glass frit including glass or the like.

[0051] The filling part 500 may be positioned in a space between the light emitting part 100 and the light transmitting part 300 surrounded by the sealing member 700. The filling part 500 may fill the space between the light emitting part 100 and the light transmitting part 300.

[0052] In an embodiment, the filling part 500 may be made of a material that transmits light. In an embodiment, the filling part 500 may be made of an organic material. For example, the filling part 500 may be made of a silicone organic material, an epoxy organic material, or a mixture of a silicone organic material and an epoxy organic material.

[0053] Reference Figure 3 In addition to the display panel 10 , the display device 1 may further include a flexible circuit board FPC and a driving chip IC.

[0054] The non-display area NDA of the display panel 10 may include a pad area PDA, and the connection pad PD may be positioned in the pad area PDA. The pad area PDA may be defined on the light emitting part 100. Therefore, the connection pad PD may be provided on the light emitting part 100.

[0055] A flexible circuit board FPC may be connected to the connection pad PD. The flexible circuit board FPC may electrically connect the light emitting portion 100 to a circuit board or the like that supplies a signal and power for driving the display device 1 .

[0056] The driver chip IC may be electrically connected to the circuit board to receive data and signals. In an embodiment, the driver chip IC may be a data driver chip IC, which may receive data control signals and image data from the circuit board, etc., and may generate and output data voltages corresponding to the image data, etc.

[0057] In an embodiment, the driver chip IC may be mounted on the flexible circuit board FPC. For example, the driver chip IC may be mounted on the flexible circuit board FPC in the form of a chip on film (COF).

[0058] As will be described later, a data voltage supplied from the driving chip IC, power supplied from the circuit board, and the like may be transmitted to the pixel circuit and the like of the light emitting portion 100 via the flexible circuit board FPC and the connection pad PD.

[0059] Hereinafter, an emission region defined in the light emitting portion 100 and a transmission region defined in the light transmitting portion 300 of the display panel 10 will be described in more detail.

[0060] Figure 4 yes Figure 3 An enlarged schematic plan view of region A1 (more specifically, Figure 3 Schematic plan view of a pixel group in a display panel 10 ). Figure 5 It is shown along Figure 4 A schematic cross-sectional view of a section taken along line X2-X2'. Figure 6 yes Figure 5 An enlarged schematic plan view of area A2 of FIG.

[0061] Apart from Figure 3 In addition, refer to Figure 4 and Figure 5 , the emission area may be defined in the light emitting portion 100 of the display device 1 according to the embodiment, and the transmission area may be defined in the light transmitting portion 300 .

[0062] The display area DA and the non-display area NDA defined in the display device 1 may be applied to the light emitting portion 100 and the light transmitting portion 300 .

[0063] like Figure 4As shown in , in the display area DA of the light emitting portion 100, a first emission area ELA_1, a second emission area ELA_2, and a third emission area ELA_3 may be defined. The first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 may be areas in which light generated by the light emitting elements of the light emitting portion 100 is emitted to the outside of the light emitting portion 100, and the non-emission area NELA may be an area in which light is not emitted to the outside of the light emitting portion 100. In an embodiment, the non-emission area NELA may surround the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 within the display area DA, but the embodiment is not limited thereto.

[0064] In an embodiment, the light emitted to the outside from the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 may be light of a first color. In an embodiment, the light of the first color may be blue light. In another embodiment, the light of the first color may be mixed light, and may be a mixture of two or more of blue light, green light, and red light. The red light may have a peak wavelength in the range of about 610nm to about 650nm, the green light may have a peak wavelength in the range of about 510nm to about 550nm, and the blue light may have a peak wavelength in the range of about 440nm to about 480nm. Here, the peak wavelength refers to the wavelength at which the intensity of the light is the greatest.

[0065] In an embodiment, Figure 4 As shown in , the first emission area ELA_1 and the third emission area ELA_3 may be sequentially positioned along the second direction DR2, and the second emission area ELA_2 may be positioned at one side of the separation space between the first emission area ELA_1 and the third emission area ELA_3, so that the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 may form one group, and as shown in Figure 3 As shown in , a group formed by the first emission area ELA_1, the second emission area ELA_2 and the third emission area ELA_3 may be repeatedly arranged in the display area DA along the first direction DR1 and the second direction DR2, but the embodiment is not limited thereto. For example, the arrangement of the first emission area ELA_1, the second emission area ELA_2 and the third emission area ELA_3 may be variously changed so that the first emission area ELA_1, the second emission area ELA_2 and the third emission area ELA_3 may be sequentially positioned along the second direction DR2. In the following, in order to simplify the description, the following description will be given as follows. Figure 4 The case where the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 are arranged as shown in FIG. 1 is taken as an example.

[0066] In an embodiment, the area (or size) of the first emission area ELA_1, the area (or size) of the second emission area ELA_2, and the area (or size) of the third emission area ELA_3 may be substantially the same as each other, but the embodiment is not limited thereto. For example, the area of ​​the first emission area ELA_1, the area of ​​the second emission area ELA_2, and the area of ​​the third emission area ELA_3 may be different from each other. In an embodiment, the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 may have a square shape in a plan view, but the embodiment is not limited thereto. Hereinafter, in order to simplify the description, the fact that the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 have a square planar shape and have substantially the same area will be described in detail.

[0067] The first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3 may be defined in the display area DA of the light transmission part 300. The first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3 may be areas through which light generated in the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 of the light emitting part 100 passes (or transmits through). The light blocking area BA may be positioned at the periphery of the first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3 in the display area DA of the light transmission part 300. In an embodiment, the light blocking area BA may surround the first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3, but the embodiment is not limited thereto. For example, the light blocking area BA may be positioned in the non-display area NDA of the light transmission part 300 as well as the display area DA.

[0068] The first transmission area TA_1 may correspond to (or overlap) the first emission area ELA_1, the second transmission area TA_2 may correspond to (or overlap) the second emission area ELA_2, and the third transmission area TA_3 may correspond to (or overlap) the third emission area ELA_3. In an embodiment, the first transmission area TA_1 and the first emission area ELA_1 may have substantially the same area (or the same size). The first transmission area TA_1 may overlap (for example, completely overlap) the first emission area ELA_1. The second transmission area TA_2 and the second emission area ELA_2 may have substantially the same area (or the same size). The second transmission area TA_2 may overlap (for example, completely overlap) the second emission area ELA_2. The third transmission area TA_3 and the third emission area ELA_3 may have substantially the same area (or the same size). The third transmission area TA_3 may overlap (for example, completely overlap) the third emission area ELA_3. However, the embodiment is not limited thereto. For example, the first transmission area TA_1 may have a different area (or a different size) from the first emission area ELA_1, the second transmission area TA_2 may have a different area (or a different size) from the second emission area ELA_2, and the third transmission area TA_3 may have a different area (or a different size) from the third emission area ELA_3. Hereinafter, in order to simplify the description, the description will focus on the following facts: the first transmission area TA_1 and the first emission area ELA_1 may have substantially the same area as each other and the first transmission area TA_1 may overlap (e.g., completely overlap) the first emission area ELA_1, the second transmission area TA_2 and the second emission area ELA_2 may have substantially the same area as each other and the second transmission area TA_2 may overlap (e.g., completely overlap) the second emission area ELA_2, and the third transmission area TA_3 and the third emission area ELA_3 may have substantially the same area as each other and the third transmission area TA_3 may overlap (e.g., completely overlap) the third emission area ELA_3.

[0069] The first transmission area TA_1 and the third transmission area TA_3 may be sequentially positioned along the second direction DR2, and the second transmission area TA_2 may be positioned at one side of the separation space between the first transmission area TA_1 and the third transmission area TA_3, so that the first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3 may form a pixel group (e.g., a single pixel group). Figure 3 As shown in FIG. 1 , pixel groups may be repeatedly disposed along the first direction DR1 and the second direction DR2 within the display area DA.

[0070] As described above, the light of the first color provided from the light emitting portion 100 may pass through the first transmission area TA_1, the second transmission area TA_2, and the third transmission area TA_3 to be provided to the outside of the display device 1. The light emitted from the first transmission area TA_1 to the outside of the display device 1 may be referred to as the first emission light L1, the light emitted from the second transmission area TA_2 to the outside of the display device 1 may be referred to as the second emission light L2, and the light emitted from the third transmission area TA_3 to the outside of the display device 1 may be referred to as the third emission light L3. The first emission light L1 may be light of the first color, the second emission light L2 may be light of the second color, and the third emission light L3 may be light of the third color. In an embodiment, the light of the first color may be blue light, the light of the second color may be green light, and the light of the third color may be red light.

[0071] Hereinafter, the structure of the display device 1 will be described in detail.

[0072] Reference Figure 5 As described above, the display device 1 may include a light emitting portion 100, a light transmitting portion 300 disposed on the light emitting portion 100 to face the light emitting portion 100, and a filling portion 500 disposed between the light emitting portion 100 and the light transmitting portion 300. Hereinafter, in order to simplify the description, the light emitting portion 100, the light transmitting portion 300, and the filling portion 500 will be described in order.

[0073] The light emitting portion 100 may be a structure in which a first substrate 110, a buffer layer 120, a lower metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, source / drain electrodes SE / DE, a third insulating layer 160, a light emitting element, a pixel defining layer 170, a first covering layer CPL1 and a thin film encapsulation layer TFE are sequentially stacked on one side of a third direction DR3.

[0074] The first substrate 110 of the light emitting portion 100 may be used as a base of the light emitting portion 100. The first substrate 110 may be made of a light-transmitting material. The first substrate 110 may be a glass substrate or a plastic substrate. In the case where the first substrate 110 is a plastic substrate, the first substrate 110 may have flexibility. In an embodiment, in the case where the first substrate 110 is a plastic substrate, the first substrate 110 may include polyimide, but the embodiment is not limited thereto.

[0075] The buffer layer 120 of the light emitting portion 100 may be disposed on the first substrate 110. The buffer layer 120 may be used to block foreign matter or moisture from penetrating the first substrate 110 to the elements disposed on the buffer layer 120.

[0076] In an embodiment, the buffer layer 120 may include a SiO 2 、SiN xor SiO x N y The inorganic material may be formed as a single layer or a multi-layer, but the embodiment is not limited thereto.

[0077] The lower metal layer BML of the light emitting part 100 may be disposed on the buffer layer 120. The lower metal layer BML may block external light or light emitted from a light emitting element to be described later from being introduced into the semiconductor layer ACT. Therefore, leakage current due to light may be prevented or reduced from occurring in a thin film transistor to be described later.

[0078] The lower metal layer BML may be made of a material that blocks light and has conductivity. In an embodiment, the lower metal layer BML may include a single material of a metal such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), or neodymium (Nd), or an alloy thereof. In an embodiment, the lower metal layer BML may have a single-layer structure or a multi-layer structure. For example, in the case where the lower metal layer BML has a multi-layer structure, the lower metal layer BML may have a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or titanium (Ti) / copper (Cu) / aluminum oxide (Al 2 O 3 ) in a stacking structure, but the embodiment is not limited thereto.

[0079] In an embodiment, the lower metal layers BML may be disposed to correspond to the semiconductor layers ACT, respectively, and may overlap the semiconductor layer ACT. In an embodiment, the width of the lower metal layer BML may be greater than that of the semiconductor layer ACT.

[0080] In an embodiment, the lower metal layer BML may be a data line, a power line, and a thin film transistor (not shown in the drawings) and a thin film transistor (not shown in the drawings) shown in the drawings. Figure 5 The lower metal layer BML may be a portion of a line or the like that electrically connects the source electrode SE and the drain electrode DE to each other. In an embodiment, the lower metal layer BML may be made of a material having a lower resistance than that of the source electrode SE and the drain electrode DE.

[0081] The first insulating layer 130 of the light emitting part 100 may be disposed on the lower metal layer BML. The first insulating layer 130 may be used to electrically insulate the lower metal layer BML from the semiconductor layer ACT. The first insulating layer 130 may cover the lower metal layer BML.

[0082] In an embodiment, the first insulating layer 130 may include a 2 、SiN x 、SiO x N y 、Al 2 O 3 、TiO2 、 2 O、HfO 2 or ZrO 2 of inorganic materials, but the embodiment is not limited thereto.

[0083] The semiconductor layer ACT of the light emitting portion 100 may be disposed on the first insulating layer 130. The semiconductor layer ACT may be disposed to correspond to (or overlap) each of the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 in the display area DA of the light emitting portion 100. In addition, the semiconductor layer ACT may overlap the lower metal layer BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0084] The semiconductor layer ACT may include an oxide semiconductor. In an embodiment, the semiconductor layer ACT may be formed of a zinc (Zn) oxide-based material (e.g., Zn oxide, In-Zn oxide, or Ga-In-Zn oxide), and may be an In-Ga-Zn-O (IGZO) semiconductor including a metal such as indium (In) or gallium (Ga), but the embodiment is not limited thereto. For example, the semiconductor layer ACT may include amorphous silicon or polycrystalline silicon.

[0085] The gate electrode GE of the light emitting part 100 may be disposed on the semiconductor layer ACT. The gate electrode GE may overlap the semiconductor layer ACT in the display area DA. In an embodiment, the width of the gate electrode GE may be narrower than that of the semiconductor layer ACT, but the embodiment is not limited thereto.

[0086] In an embodiment, the gate electrode GE may include one or more materials of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu), and may be formed as a single layer or a multilayer, taking into account adhesion with adjacent layers, surface flatness and processability of stacked layers, etc., but the embodiment is not limited thereto.

[0087] The gate insulating layer 140 of the light emitting portion 100 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may insulate the semiconductor layer ACT from the gate electrode GE. In an embodiment, the gate insulating layer 140 may not be composed of a single layer disposed on one side of the first substrate 110 in the third direction DR3 but may be composed of a partially patterned shape, and the width of the gate insulating layer 140 may be narrower than the width of the semiconductor layer ACT and wider than the width of the gate electrode GE, but the embodiment is not limited thereto.

[0088] In an embodiment, the gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include an inorganic material as an example in the description of the first insulating layer 130 .

[0089] The second insulating layer 150 of the light emitting part 100 may be disposed on the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In an embodiment, the second insulating layer 150 may function as a planarization layer providing a planar surface.

[0090] The second insulating layer 150 may include an organic material. In an embodiment, the second insulating layer 150 may include at least one of photoacryl material (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, polyparaxylene, fluorine-based polymer, epoxy resin, benzocyclobutene-based resin, siloxane-based resin, and silane resin, but the embodiment is not limited thereto.

[0091] The source electrode SE and the drain electrode DE of the light emitting portion 100 may be spaced apart from each other and disposed on the second insulating layer 150. The source electrode SE and the drain electrode DE may be connected to the semiconductor layer ACT through contact holes penetrating the second insulating layer 150, respectively. In an embodiment, the source electrode SE may penetrate the first insulating layer 130 and the second insulating layer 150, and may be connected to the lower metal layer BML. In the case where the lower metal layer BML is part of a line that transmits a signal and a voltage, etc., the source electrode SE may be connected and electrically connected to the lower metal layer BML to receive a transmission voltage, etc., provided to the line. In another example, in the case where the lower metal layer BML is a floating pattern instead of a separate line, the voltage, etc. provided to the source electrode SE may be transmitted to the lower metal layer BML, etc.

[0092] The source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or a single layer. In an embodiment, the source electrode SE and the drain electrode DE may have a multilayer structure of Ti / Al / Ti, but the embodiment is not limited thereto.

[0093] The semiconductor layer ACT, the gate electrode GE, the source electrode SE and the drain electrode DE described above may form a thin film transistor as a switching element. In an embodiment, the thin film transistor may be positioned in each of the first emission area ELA_1, the second emission area ELA_2 and the third emission area ELA_3. In an embodiment, a portion of the thin film transistor may be positioned in the non-emission area NELA.

[0094] The third insulating layer 160 of the light emitting portion 100 may be disposed on the second insulating layer 150 to cover the thin film transistor. In an embodiment, the third insulating layer 160 may be a planarization layer.

[0095] The third insulating layer 160 may be made of an organic material. In an embodiment, the third insulating layer 160 may include acrylic resin, epoxy resin, imide resin, ester resin, etc., or may include a photosensitive organic material, but the embodiment is not limited thereto.

[0096] The anode electrode ANO may be positioned on the third insulating layer 160 in the display area DA of the light emitting part 100. The anode electrodes ANO may be spaced apart from each other.

[0097] The anode electrode ANO may overlap the first, second, and third emission regions ELA_1, ELA_2, and ELA_3, respectively, and may at least partially extend to the non-emission region NELA. The anode electrode ANO may be connected to the drain electrode DE of the thin film transistor.

[0098] In an embodiment, the anode electrode ANO may be a reflective electrode, in which case the anode electrode ANO may be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In another embodiment, the anode electrode ANO may further include a metal oxide layer stacked on the metal layer. In an embodiment, the anode electrode ANO may have a multilayer structure (e.g., ITO / Ag, Ag / ITO, ITO / Mg, and ITO / MgF 2 or a three-layer structure of ITO / Ag / ITO).

[0099] The pixel defining layer 170 of the light emitting part 100 may be disposed on the anode electrode ANO. The pixel defining layer 170 may define the first emission area ELA_1, the second emission area ELA_2, and the third emission area ELA_3 as openings respectively exposing the anode electrode ANO. The pixel defining layer 170 may overlap an edge portion of the anode electrode ANO.

[0100] The pixel defining layer 170 may overlap a light blocking area BA of the color filter layer 320 to be described later in the third direction DR3. For example, the pixel defining layer 170 may overlap a bank pattern layer BK to be described later in the third direction DR3.

[0101] In an embodiment, the pixel defining layer 170 may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, and benzocyclobutene (BCB) resin, but the embodiment is not limited thereto.

[0102] The light emitting layer OL of the light emitting portion 100 may be disposed on the anode electrode ANO. In an embodiment, the light emitting layer OL may have a continuous film shape formed throughout the emission areas ELA_1, ELA_2, and ELA_3 and the non-emission area NELA. In an embodiment, the light emitting layer OL may be positioned only in the display area DA, but the embodiment is not limited thereto. For example, a portion of the light emitting layer OL may also be disposed in the non-display area NDA. A more detailed description of the light emitting layer OL will be given later.

[0103] The cathode electrode CE of the light emitting portion 100 may be disposed on the light emitting layer OL. In an embodiment, the cathode electrode CE may be disposed on the light emitting layer OL to have a continuous film shape formed throughout the emission regions ELA_1, ELA_2, and ELA_3 and the non-emission region NELA. For example, the cathode electrode CE may cover (eg, completely cover) the light emitting layer OL.

[0104] The cathode electrode CE may have a semi-transmissive property or a transmissive property. In the case where the cathode electrode CE has a thickness of tens to hundreds of angstroms, the cathode electrode CE may have a semi-transmissive property. In an embodiment, in the case where the cathode electrode CE has a semi-transmissive property, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or a compound or mixture thereof (such as a mixture of Ag and Mg), or may include a material having a multilayer structure such as LiF / Ca or LiF / Al. For example, the cathode electrode CE may include a transparent conductive oxide to have a transmissive property. In an embodiment, in the case where the cathode electrode CE has a transmissive property, the cathode electrode CE may include tungsten oxide (W x O x ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO) or magnesium oxide (MgO), etc.

[0105] The anode electrode ANO, the light emitting layer OL, and the cathode electrode CE may form a light emitting element. For example, the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the first emission region ELA_1 may form a first light emitting element, the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the second emission region ELA_2 may form a second light emitting element, and the anode electrode ANO, the light emitting layer OL, and the cathode electrode CE overlapping the third emission region ELA_3 may form a third light emitting element. Each of the first light emitting element, the second light emitting element, and the third light emitting element may emit emission light LE.

[0106] Reference Figure 6, the emission light LE emitted from the light emitting layer OL may be mixed light in which the first component LE1 and the second component LE2 are mixed. Each of the first component LE1 and the second component LE2 in the emission light LE may have a peak wavelength in the range of about 440nm to about 480nm. For example, the emission light LE may be blue light.

[0107] In an embodiment, Figure 6 As shown in , the light emitting layer OL may have a structure in which light emitting material layers are stacked (e.g., a tandem structure). For example, the light emitting layer OL may include a first stack body ST1 including a first light emitting material layer EML1, a second stack body ST2 positioned on the first stack body ST1 and including a second light emitting material layer EML2, a third stack body ST3 positioned on the second stack body ST2 and including a third light emitting material layer EML3, a first charge generation layer CGL1 positioned between the first stack body ST1 and the second stack body ST2, and a second charge generation layer CGL2 positioned between the second stack body ST2 and the third stack body ST3. The first stack body ST1, the second stack body ST2, and the third stack body ST3 may overlap each other.

[0108] The first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may overlap each other.

[0109] In an embodiment, the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may all emit light of a first color (e.g., blue light). For example, each of the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may be a blue light emitting layer and may include an organic material.

[0110] In an embodiment, at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength. For example, the emission light LE emitted from the light-emitting layer OL may be a mixed light in which the first component LE1 and the second component LE2 are mixed, and the first component LE1 may be the first blue light having the first peak wavelength, and the second component LE2 may be the second blue light having the second peak wavelength.

[0111] In an embodiment, one of the first peak wavelength and the second peak wavelength may be in the range of about 440nm to about 460nm, and the other of the first peak wavelength and the second peak wavelength may be in the range of about 460nm to about 480nm. However, the range of the first peak wavelength and the range of the second peak wavelength are not limited thereto. For example, both the range of the first peak wavelength and the range of the second peak wavelength may include about 460nm. In an embodiment, one of the first blue light and the second blue light may be dark blue, and the other of the first blue light and the second blue light may be sky blue.

[0112] According to an embodiment, the emission light LE emitted from the light emitting layer OL may be blue light, and may include a long wavelength component and a short wavelength component. Therefore, the light emitting layer OL may emit blue light having an emission peak in a wider wavelength range as the emission light LE. Therefore, compared with a conventional light emitting element emitting blue light having a sharp emission peak, the color visibility at a side viewing angle may be improved.

[0113] In an embodiment, each of the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may include a host and a dopant. The material of the host is not particularly limited as long as it is commonly used. For example, tris(8-hydroxyquinoline)aluminum (Alq 3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(N-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN), 4,4',4''-tri(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP) or 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), etc.

[0114] Each of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 that emits blue light may include, for example, a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyryl-benzene (DSB), distyrylarylene (DSA), polyfluorene (PFO)-based polymers, and poly(p-phenylene vinylene) (PPV)-based polymers. As another example, a fluorescent material including (4,6-F 2 ppy) 2 Phosphorescent materials based on organometallic complexes of Ir(pic).

[0115] As described above, at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit blue light in a wavelength range different from at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3. In order to emit blue light in different wavelength ranges, the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may include the same material, and the resonance distance may be adjusted. In another example, in order to emit blue light in different wavelength ranges, at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 and at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may include materials different from each other.

[0116] However, the embodiment is not limited thereto, and the first, second, and third light emitting material layers EML1, EML2, and EML3 may emit blue light having a peak wavelength within a range of about 440 nm to about 480 nm, and may be made of the same material.

[0117] In another embodiment, at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength, and another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In another embodiment, any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 440 nm to about 460 nm. Another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 460 nm to about 470 nm, and another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 470 nm to about 480 nm.

[0118] According to another embodiment, the emission light LE emitted from the light emitting layer OL may be blue light, and may include a long wavelength component, an intermediate wavelength component, and a short wavelength component. Therefore, the light emitting layer OL may emit blue light having an emission peak in a wider wavelength range as the emission light LE, thereby improving color visibility at a side viewing angle.

[0119] According to the above-described embodiment, compared with a conventional light emitting element that does not adopt a tandem structure (ie, a structure in which light emitting layers OL are stacked), there are advantages in that light efficiency is increased and the life of the display device 1 is increased.

[0120] In another embodiment, at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit light of a first color (e.g., blue light), and at least another of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit light of a second color (e.g., green light). In another embodiment, a peak wavelength range of blue light emitted by at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be in the range of about 440 nm to about 480 nm. Green light emitted from at least one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may have a peak wavelength in the range of about 510 nm to about 550 nm.

[0121] For example, any one of the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may be a green light emitting layer that emits green light, and the other two of the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 may be blue light emitting layers that emit blue light. In the case where the other two of the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3 are blue light emitting layers, the peak wavelength ranges of the blue light emitted by the two blue light emitting layers may be the same as or different from each other.

[0122] According to yet another embodiment, the emission light LE emitted from the light emitting layer OL may be a mixed light in which a first component LE1 as blue light and a second component LE2 as green light are mixed. For example, in the case where the first component LE1 is dark blue light and the second component LE2 is green light, the emission light LE may be sky blue light. Similar to the above-mentioned embodiment, the emission light LE emitted from the light emitting layer OL as a mixture of blue light and green light may include a long wavelength component and a short wavelength component. Therefore, the light emitting layer OL may emit blue light having an emission peak in a wider wavelength range as the emission light LE, thereby improving the color visibility at a side viewing angle. For example, since the second component LE2 of the emission light LE is green light, the green light component of the light provided from the display device 1 to the outside may be supplemented, thereby improving the color reproducibility of the display device 1.

[0123] In another embodiment, the green light emitting layer among the first light emitting material layer EML1, the second light emitting material layer EML2 and the third light emitting material layer EML3 may include a host and a dopant. The material of the host included in the green light emitting layer is not particularly limited as long as it is commonly used. For example, tris(8-hydroxyquinoline)aluminum (Alq 3 ), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(N-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN), 4,4',4''-tri(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP) or 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), etc.

[0124] The dopant included in the green light emitting layer may include, for example, tris(8-hydroxyquinoline)aluminum(III) (Alq 3 ) or fluorescent materials such as face-tris(2-phenylpyridine)iridium (Ir(ppy)3 ), bis(2-phenylpyridine)(acetylacetonate)iridium(III) (Ir(ppy) 2 (acac)) and tris[2-(p-tolyl)pyridine]iridium(III) (Ir(mpyp) 3 ) of phosphorescent material.

[0125] The first charge generation layer CGL1 may be positioned between the first stack body ST1 and the second stack body ST2. The first charge generation layer CGL1 may be used to inject charges into each light emitting layer OL. The first charge generation layer CGL1 may be used to control the charge balance between the first stack body ST1 and the second stack body ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and between the n-type charge generation layer CGL11 and the second stack body ST2.

[0126] The first charge generation layer CGL1 may have a structure in which an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12 are in contact with each other. The n-type charge generation layer CGL11 may be disposed closer to the anode electrode ANO between the anode electrode ANO and the cathode electrode CE. The p-type charge generation layer CGL12 may be disposed closer to the cathode electrode CE between the anode electrode ANO and the cathode electrode CE. The n-type charge generation layer CGL11 may supply electrons to the first light emitting material layer EML1 adjacent to the anode electrode ANO, and the p-type charge generation layer CGL12 may supply holes to the second light emitting material layer EML2 included in the second stack body ST2. The first charge generation layer CGL1 may be disposed between the first stack body ST1 and the second stack body ST2 to provide charges to each light emitting material layer, thereby improving light emitting efficiency and reducing a driving voltage.

[0127] The first stack ST1 may be positioned on the anode electrode ANO, and may further include a first hole transport layer HTL1, a first electron blocking layer EBL1, a first light emitting material layer EML1, and a first electron transport layer ETL1.

[0128] The first hole transport layer HTL1 may be positioned on the anode electrode ANO. The first hole transport layer HTL1 may be used to promote the transport of holes and may include a hole transport material. The hole transport material may include a carbazole derivative (such as N-phenylcarbazole and polyvinylcarbazole), a fluorene derivative or a triphenylamine derivative (such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), 4,4',4''-tri(N-carbazolyl)triphenylamine (TCTA), N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB) and 4,4'-cyclohexylenebis[N,N-bis(4-methylphenyl)aniline] (TAPC)), etc., but the embodiment is not limited thereto.

[0129] The first electron blocking layer EBL1 may be positioned on the first hole transport layer HTL1 and between the first hole transport layer HTL1 and the first light emitting material layer EML1. The first electron blocking layer EBL1 may include a hole transport material and a metal or a metal compound to prevent electrons generated in the first light emitting material layer EML1 from moving into the first hole transport layer HTL1. In an embodiment, the first hole transport layer HTL1 and the first electron blocking layer EBL1 may be formed as a single layer in which corresponding materials are mixed.

[0130] The first electron transport layer ETL1 may be positioned on the first light emitting material layer EML1 and between the first charge generation layer CGL1 and the first light emitting material layer EML1. In an embodiment, the first electron transport layer ETL1 may include an electron transport material such as tris(8-hydroxyquinoline)aluminum (Alq 3 )、1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalene-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinolato-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), bis(10-hydroxy-benzoquinolinolato)beryllium (Bebq 2), 9,10-di(naphthalene-2-yl)anthracene (AND), and mixtures thereof. However, the embodiment is not limited to the type of electron transport material. The second stack ST2 may be positioned on the first charge generation layer CGL1, and further include a second hole transport layer HTL2, a second electron blocking layer EBL2, a second light emitting material layer EML2, and a second electron transport layer ETL2.

[0131] The second hole transport layer HTL2 may be positioned on the first charge generation layer CGL1. The second hole transport layer HTL2 and the first hole transport layer HTL1 may be made of the same material as each other. In another example, the second hole transport layer HTL2 may include one or more materials selected from the examples of the material included in the first hole transport layer HTL1. The second hole transport layer HTL2 may be formed as a single layer or a multilayer.

[0132] The second electron blocking layer EBL2 may be positioned on the second hole transport layer HTL2 and between the second hole transport layer HTL2 and the second light emitting material layer EML2. The second electron blocking layer EBL2 and the first electron blocking layer EBL1 may be formed of the same material and the same structure as each other. In another example, the second electron blocking layer EBL2 may include one or more materials selected from the examples of the materials included in the first electron blocking layer EBL1.

[0133] The second electron transport layer ETL2 may be positioned on the second light emitting material layer EML2 and between the second charge generation layer CGL2 and the second light emitting material layer EML2. The second electron transport layer ETL2 and the first electron transport layer ETL1 may be formed of the same material and the same structure as each other. In another example, the second electron transport layer ETL2 may include one or more materials selected from the examples of the materials included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be formed as a single layer or a multilayer.

[0134] The second charge generation layer CGL2 may be positioned on the second stacked body ST2 and between the second stacked body ST2 and the third stacked body ST3 .

[0135] The second charge generation layer CGL2 and the first charge generation layer CGL1 may have the same above-mentioned structure as each other. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed closer to the second stack body ST2 and a p-type charge generation layer CGL22 disposed closer to the cathode electrode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0136] The second charge generation layer CGL2 may have a structure in which an n-type charge generation layer CGL21 and a p-type charge generation layer CGL22 contact each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials, or may be made of the same material.

[0137] The third stack ST3 may be positioned on the second charge generation layer CGL2 , and may further include a third hole transport layer HTL3 , a third light emitting material layer EML3 , and a third electron transport layer ETL3 .

[0138] The third hole transport layer HTL3 may be positioned on the second charge generation layer CGL2. The third hole transport layer HTL3 and the first hole transport layer HTL1 may be made of the same material. In another example, the third hole transport layer HTL3 may include one or more materials selected from the examples of the material included in the first hole transport layer HTL1. The third hole transport layer HTL3 may be formed as a single layer or multiple layers. In the case where the third hole transport layer HTL3 is formed as multiple layers, each layer may include different materials.

[0139] The third electron transport layer ETL3 may be positioned on the third light emitting material layer EML3 and between the cathode electrode CE and the third light emitting material layer EML3. The third electron transport layer ETL3 and the first electron transport layer ETL1 may be formed of the same material and the same structure as each other. In another example, the third electron transport layer ETL3 may include one or more materials selected from the examples of the material included in the first electron transport layer ETL1. The third electron transport layer ETL3 may be formed as a single layer or multiple layers. In the case where the third electron transport layer ETL3 is formed as a multilayer, each layer may include a different material.

[0140] For example, the hole injection layer may be further positioned in at least one of the corresponding spaces between the first hole transport layer HTL1 and the anode electrode ANO, between the second hole transport layer HTL2 and the first charge generation layer CGL1, and between the third hole transport layer HTL3 and the second charge generation layer CGL2. The hole injection layer may be used to smoothly inject holes into the first light emitting material layer EML1, the second light emitting material layer EML2, and the third light emitting material layer EML3. In an embodiment, the hole injection layer may be made of one or more materials selected from the group consisting of copper phthalocyanine (CuPc), poly (3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and N,N-dinaphthyl-N,N'-diphenylbenzidine (NPD), but the embodiment is not limited thereto.

[0141] For example, the electron injection layer may be further positioned between at least one of the following: between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second electron transport layer ETL2, and between the first charge generation layer CGL1 and the first electron transport layer ETL1. The electron injection layer may be used to facilitate electron injection and may be made of tris(8-hydroxyquinoline)aluminum (Alq 3 ), PBD, TAZ, spiro-PBD, BAlq or SAlq, but the embodiment is not limited thereto. In addition, the electron injection layer may be a metal halide compound and may include a material selected from MgF 2 , LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI and CaF 2 One or more materials in the group consisting of, but the embodiment is not limited thereto. In addition, the electron injection layer may include a lanthanide material such as Yb, Sm, or Eu. In another example, the electron injection layer may include both a metal halide material and a lanthanide material, such as RbI:Yb or KI:Yb. In the case where the electron injection layer includes both a metal halide material and a lanthanide material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanide material.

[0142] In an embodiment, the light emitting layer OL may not include a red light emitting material layer, and thus may not emit red light. For example, the emission light LE may not include a light component having a peak wavelength of about 610 nm to about 650 nm, and the emission light LE may only include a light component having a peak wavelength of about 440 nm to about 550 nm.

[0143] Return to reference Figure 5 , the first cover layer CPL1 may be disposed on the cathode electrode CE. The first cover layer CPL1 may be used to improve viewing angle characteristics and improve external light emitting efficiency. The first cover layer CPL1 may be commonly disposed in the first emission area ELA_1, the second emission area ELA_2, the third emission area ELA_3, and the non-emission area NELA. The first cover layer CPL1 may cover (e.g., completely cover) the cathode electrode CE.

[0144] The first cover layer CPL1 may include at least one of an inorganic material and an organic material having a light-transmitting property. For example, the first cover layer CPL1 may be formed of an inorganic layer, an organic layer, or an organic layer including inorganic particles. In an embodiment, the first cover layer CPL1 may include a triamine derivative, a carbazole biphenyl derivative, an arylene diamine derivative, or an aluminum chelate compound (e.g., Alq 3 ) etc., but the embodiments are not limited thereto.

[0145] The thin film encapsulation layer TFE of the light emitting portion 100 may be disposed on the first cover layer CPL1. The thin film encapsulation layer TFE may be used to protect components positioned under the thin film encapsulation layer TFE from external foreign matter or moisture. The thin film encapsulation layer TFE may be commonly disposed in the first emission area ELA_1, the second emission area ELA_2, the third emission area ELA_3, and the non-emission area NELA. The thin film encapsulation layer TFE may cover (e.g., completely cover) the first cover layer CPL1.

[0146] The thin film encapsulation layer TFE may include a lower inorganic encapsulation layer TFEa, an organic encapsulation layer TFEb, and an upper inorganic encapsulation layer TFEc sequentially stacked on the first cover layer CPL1.

[0147] The lower inorganic encapsulation layer TFEa may cover (e.g., completely cover) the first cover layer CPL1 in the display area DA to cover the first light emitting element, the second light emitting element, and the third light emitting element. The organic encapsulation layer TFEb may be disposed on the lower inorganic encapsulation layer TFEa to cover (e.g., completely cover) the lower inorganic encapsulation layer TFEa. The upper inorganic encapsulation layer TFEc may be disposed on the organic encapsulation layer TFEb to cover (e.g., completely cover) the organic encapsulation layer TFEb.

[0148] In an embodiment, each of the lower inorganic encapsulation layer TFEa and the upper inorganic encapsulation layer TFEc may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiO x N y ) or lithium fluoride, etc., but the embodiment is not limited thereto.

[0149] In an embodiment, the organic encapsulation layer TFEb may be formed of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or the like, but the embodiment is not limited thereto.

[0150] In the following, reference will be made to Figure 5 The light transmission portion 300 will be described.

[0151] The light transmitting part 300 may have a structure in which a second substrate 310 , a color filter layer 320 , a second cover layer CPL2 , a light transmitting member, a bank pattern layer BK, and a third cover layer CPL3 are sequentially stacked on the other side of the third direction DR3 .

[0152] The second substrate 310 of the light transmission part 300 may be used as a base of the light transmission part 300. The second substrate 310 may be made of a light transmission material. The second substrate 310 may be a glass substrate or a plastic substrate. In the case where the second substrate 310 is a plastic substrate, the second substrate 310 may have flexibility. In an embodiment, in the case where the second substrate 310 is a plastic substrate, the second substrate 310 may include polyimide, but the embodiment is not limited thereto. As described above, since the light emitting part 100 and the light transmission part 300 face each other in the third direction DR3, the first substrate 110 of the light emitting part 100 and the second substrate 310 of the light transmission part 300 may face each other in the third direction DR3.

[0153] The color filter layer 320 of the light transmission part 300 may be disposed on the other side of the second substrate 310 in the third direction DR3 (e.g., disposed between the second substrate 310 and the light emitting part 100). The color filter layer 320 may include a filter pattern area and a light blocking pattern part BM. The light blocking pattern part BM may surround the filter pattern area. The filter pattern of the color filter layer 320 may define a transmission area of ​​the light transmission part 300, and the light blocking pattern part BM may define a light blocking area BA of the light transmission part 300.

[0154] like Figure 5 As shown in , the color filter layer 320 may include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 may absorb both the second light and the third light except the first light, the second color filter 322 may absorb both the first light and the third light except the second light, and the third color filter 323 may absorb both the first light and the second light except the third light. For example, the first color filter 321 may transmit the first light, the second color filter 322 may transmit the second light, and the third color filter 323 may transmit the third light.

[0155] In an embodiment, the first color filter 321 may be a blue color filter and may include a blue colorant. In the disclosure, the colorant may include a dye and a pigment. The first color filter 321 may include a matrix resin, and the blue colorant may be dispersed in the matrix resin. In an embodiment, the second color filter 322 may be a green color filter and may include a green colorant. The second color filter 322 may include a matrix resin, and the green colorant may be dispersed in the matrix resin. In an embodiment, the third color filter 323 may be a red color filter and may include a red colorant. The third color filter 323 may include a matrix resin, and the red colorant may be dispersed in the matrix resin.

[0156] The first color filter 321 may include a first filter pattern area 321a and a first blocking pattern area 321b surrounding the first filter pattern area 321a, the second color filter 322 may include a second filter pattern area 322a and a second blocking pattern area 322b surrounding the second filter pattern area 322a, and the third color filter 323 may include a third filter pattern area 323a and a third blocking pattern area 323b surrounding the third filter pattern area 323a. For example, the first filter pattern area 321a of the first color filter 321 may overlap with the first transmission area TA_1. The first blocking pattern area 321b of the first color filter 321 may surround the first filter pattern area 321a overlapping with the first transmission area TA_1, and may overlap with the light blocking area BA. The first blocking pattern area 321b of the first color filter 321 may not overlap with the second transmission area TA_2 and the third transmission area TA_3. The second filter pattern area 322a of the second color filter 322 may overlap with the second transmission area TA_2. The second blocking pattern area 322b of the second color filter 322 may surround the second filter pattern area 322a overlapping the second transmission area TA_2, and may overlap the light blocking area BA. The second blocking pattern area 322b of the second color filter 322 may not overlap the first transmission area TA_1 and the third transmission area TA_3. The third filter pattern area 323a of the third color filter 323 may overlap the third transmission area TA_3. The third blocking pattern area 323b of the third color filter 323 may surround the third filter pattern area 323a overlapping the third transmission area TA_3, and may overlap the light blocking area BA. The third blocking pattern area 323b of the third color filter 323 may not overlap the first transmission area TA_1 and the second transmission area TA_2. For example, the filter pattern area of ​​the color filter layer 320 may include a first filter pattern area 321a of the first color filter 321, a second filter pattern area 322a of the second color filter 322, and a third filter pattern area 323a of the third color filter 323. The light blocking pattern part BM may have a structure in which the first blocking pattern area 321b of the first color filter 321, the second blocking pattern area 322b of the second color filter 322, and the third blocking pattern area 323b of the third color filter 323 are stacked on each other.

[0157] The first filter pattern area 321a of the first color filter 321 may be used as a blocking filter for blocking red light and green light. For example, the first filter pattern area 321a may selectively transmit the first light (eg, blue light) and block or absorb the second light (eg, green light) and the third light (eg, red light).

[0158] The second filter pattern area 322a of the second color filter 322 can be used as a blocking filter for blocking blue light and red light. For example, the second filter pattern area 322a can selectively transmit the second light (e.g., green light) and block or absorb the first light (e.g., blue light) and the third light (e.g., red light).

[0159] The third filter pattern area 323a of the third color filter 323 may be used as a blocking filter for blocking blue light and green light. For example, the third filter pattern area 323a may selectively transmit the third light (e.g., red light) and block or absorb the first light (e.g., blue light) and the second light (e.g., green light).

[0160] In an embodiment, the light blocking pattern part BM may have a structure in which the first blocking pattern area 321b, the third blocking pattern area 323b, and the second blocking pattern area 322b are sequentially stacked on the other side of the third direction DR3, but the embodiment is not limited thereto. For example, the light blocking pattern part BM may not be composed of the above-mentioned color filters 321, 322, and 323, but may be formed as a separate organic light blocking material through a coating and exposure process of an organic light blocking material or the like. Hereinafter, in order to simplify the description, the following fact will be focused on for description: the light blocking pattern part BM has a structure in which the first blocking pattern area 321b, the third blocking pattern area 323b, and the second blocking pattern area 322b are sequentially stacked on the other side of the third direction DR3. The light blocking pattern part BM may absorb all of the first light, the second light, and the third light through the above-mentioned configuration.

[0161] The low refractive index layer LR may be disposed on the color filter layer 320. The low refractive index layer LR may have a lower refractive index than the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 to be described later, and thus may be used to recycle light by causing total reflection of light traveling from the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 to the low refractive index layer LR.

[0162] In an embodiment, the refractive index of the low refractive index layer LR may be in the range of about 1.10 to about 1.30. In the case where the above range is satisfied, total reflection of light may sufficiently occur and light loss may be reduced.

[0163] The refractive index described in the disclosure can be measured using an optical measuring instrument such as an ellipsometer or a spectroscopic reflectometer. An ellipsometer can measure the refractive index by measuring the polarization change of incident light and reflected light relative to the inorganic layer and by calculating the thickness and the composite refractive index of the inorganic layer. A spectroscopic reflectometer can measure the refractive index of the inorganic layer by comparing the intensity of light obtained by changing the wavelength. The refractive index can be a value measured at room temperature and normal pressure.

[0164] In addition, the low refractive index layer LR can be used to provide a flat surface by compensating for the step portions generated by the blocking pattern areas 321b, 322b, and 323b of the color filter layer 320. Therefore, the second cover layer CPL2 disposed on the low refractive index layer LR can be formed to be substantially flat. The thickness of the low refractive index layer LR in the light blocking area BA may be different from the thickness of the low refractive index layer LR in the transmission areas TA_1, TA_2, and TA_3, and the thickness of the low refractive index layer LR in the light blocking area BA may be smaller than the thickness of the low refractive index layer LR in the transmission areas TA_1, TA_2, and TA_3.

[0165] The second cover layer CPL2 of the light transmission part 300 may be disposed on the surface of the low refractive index layer LR to cover the low refractive index layer LR. The second cover layer CPL2 may prevent impurities such as moisture or air from the outside from penetrating into the low refractive index layer LR or the color filter layer 320, and prevent the filter pattern region and the light blocking pattern portion BM of the color filter layer 320 and the low refractive index layer LR from being damaged or contaminated.

[0166] The second cover layer CPL2 may include an inorganic material. As will be described later, the second cover layer CPL2 may be formed as a single layer or a plurality of layers.

[0167] The refractive index of the second cover layer CPL2 may be greater than that of the low refractive index layer LR. In an embodiment, the refractive index of the second cover layer CPL2 may be about 0.30 to about 0.60 greater than that of the low refractive index layer LR. In the case where the refractive index difference is within the above range, total reflection in the low refractive index layer LR may occur well and light may be recycled. In an embodiment, the refractive index of the second cover layer CPL2 may be in the range of about 1.40 to about 1.70.

[0168] The second cover layer CPL2 may include a first surface CPL2_S1 (see FIG. Fig. 9 ) and a second surface CPL2_S2 opposite to the first surface CPL2_S1 (see Fig. 9 ).

[0169] The second surface CPL2_S2 of the second cover layer CPL2 in the first emission area ELA_1 or the first transmission area TA_1 may include a covering concavo-convex pattern CPL2_P. The second surface CPL2_S2 of the second cover layer CPL2 in the second emission area ELA_2 or the second transmission area TA_2 may be substantially flat and may not include a concavo-convex pattern. The second surface CPL2_S2 of the second cover layer CPL2 in the third emission area ELA_3 or the third transmission area TA_3 may be substantially flat and may not include a concavo-convex pattern. For example, the second surface CPL2_S2 of the second cover layer CPL2 may include a covering concavo-convex pattern CPL2_P for the first transmission area TA_1 through which blue light is transmitted only, and the second surface CPL2_S2 of the second cover layer CPL2 may not have a covering concavo-convex pattern CPL2_P for the second transmission area TA_2 through which green light is transmitted and the third transmission area TA_3 through which red light is transmitted, and may be substantially flat.

[0170] In an embodiment, Figure 7 As shown in FIG. 2 , the cover concavo-convex pattern CPL2_P may be a plurality of island patterns separated from each other. Each island pattern may have a dot shape. Figure 7 Each dot is shown to have a circular cross-section with the same diameter in a plan view, but each dot may have a circular or elliptical cross-section with a different diameter. In another embodiment, the covering concavo-convex pattern CPL2_P may be an extended linear pattern or a linear pattern extending in one direction (eg, the first direction DR1). Figure 8 The linear pattern is shown in the form of a straight line, but the linear pattern may include a curved shape.

[0171] The covering concavo-convex pattern CPL2_P may include a concave portion CPL2_Pa and a flat portion CPL2_Pb. The flat portion CPL2_Pb may be the same surface as the second surface CPL2_S2 of the second cover layer CPL2 in the second emission area ELA_2 or the second transmission area TA_2, the third emission area ELA_3 or the third transmission area TA_3. The concave portion CPL2_Pa may be a concave pattern concave from the flat portion CPL2_Pb in the thickness direction (e.g., the third direction DR3).

[0172] Figure 7 2 is a schematic perspective view showing the second cover layer CPL 2 in the first transmission area TA_1 of the display device 1 according to the embodiment. Figure 8 2 is a schematic perspective view showing a second cover layer CPL2 in a first transmission area TA_1 of a display device 1 according to another embodiment. Fig. 9 It is along Figure 7 and Figure 8FIG. 2 is an enlarged schematic diagram of a cross section (eg, the concave portion CPL2_Pa) taken along line X3 - X3 ′. Fig. 9 Not only the second cover layer CPL2 but also the light transmission layer TPL and the low refractive index layer LR are shown.

[0173] The concave portion CPL2_Pa of the covering concave-convex pattern CPL2_P may have a concave cross-section such as a semicircular shape, a semi-elliptical shape, or a portion of a circular shape. For example, in the case where the covering concave-convex pattern CLP2_P is an island pattern, the concave portion CPL2_Pa may have a three-dimensional outer surface of a hemispherical shape, a semi-ellipsoidal shape, or a dome shape. In the case where the concave portion CPL2_Pa has a pointed cross-section like a horn, it may be difficult to scatter light in random directions. In the case where the concave portion CPL2_Pa has a circular cross-section, light may be widely scattered and propagated.

[0174] In the cross-sectional view, the concave portion CPL2_Pa covering the concave-convex pattern CPL2_P may have a maximum length recessed from the flat portion CPL2_Pb as a depth h1 of the concave portion CPL2_Pa. In an embodiment, the depth h1 of the concave portion CPL2_Pa may be greater than or equal to about 0.1 μm. In another embodiment, the depth h1 of the concave portion CPL2_Pa may be in a range of about 0.2 μm to about 1 μm. In the case of the above range, light efficiency may be improved while maintaining an excellent scattering effect.

[0175] In the cross-sectional view, the concave portion CPL2_Pa covering the concave-convex pattern CPL2_P may have a length from the end of the concave portion CPL2_Pa where it meets the flat portion CPL2_Pb to the other end of the concave portion CPL2_Pa opposite to the end, as the width d1 of the concave portion CPL2_Pa. The width d1 of the concave portion CPL2_Pa may represent the distance between two points within the concave portion CPL2_Pa. In an embodiment, the width d1 of the concave portion CPL2_Pa may be greater than or equal to about 3 μm. In another embodiment, the width d1 of the concave portion CPL2_Pa may be in the range of about 4 μm to about 10 μm. In the case of the above range, light efficiency can be improved and an excellent scattering effect can be maintained.

[0176] In an embodiment, in a cross-sectional view, a distance d2 between adjacent concave portions CPL2_Pa covering the concave-convex pattern CPL2_P may be about 1.5 μm or more. In another embodiment, a distance d2 between adjacent concave portions CPL2_Pa may be about 2.5 μm to about 10 μm. In the case of the above range, light efficiency may be improved while maintaining an excellent scattering effect.

[0177] Reference Figure 5, the dike pattern layer BK of the light transmission part 300 may be disposed on the second surface CPL_S2 of the second cover layer CPL2, and form a space for accommodating a light transmission member to be described later. A plurality of spaces for accommodating light transmission members may be constructed, and the plurality of spaces may be spaced apart from each other. For example, the dike pattern layer BK may be used to separate spaces in which a light transmission member to be described later is disposed. The dike pattern layer BK may be in contact with (e.g., in direct contact with) the second surface CPL_S2 of the second cover layer CPL2. The dike pattern layer BK may surround the light transmission member to be described later in a plan view. The dike pattern layer BK may overlap with the non-emission area NELA of the light emitting part 100 and the light blocking area BA of the light transmission part 300. The dike pattern layer BK may not overlap with the emission areas ELA_1, ELA_2, and ELA_3 of the light emitting part 100 and the transmission areas TA_1, TA_2, and TA_3 of the light transmission part 300.

[0178] In embodiments, the bank pattern layer BK may include an organic material having a photocurability or an organic material having a photocurability and including a light blocking material, but embodiments are not limited thereto.

[0179] The light transmission member of the light transmission part 300 may be disposed on the second surface CPL_S2 of the second cover layer CPL2 exposed by the separation space of the bank pattern layer BK. The light transmission member may include a light transmission layer TPL overlapping the first transmission area TA_1, a first wavelength conversion layer WCL1 overlapping the second transmission area TA_2, and a second wavelength conversion layer WCL2 overlapping the third transmission area TA_3. For example, the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 may be referred to as wavelength conversion layers or wavelength conversion material layers in the claims.

[0180] The light transmitting layer TPL may be disposed in the space partitioned by the bank pattern layer BK, and may overlap the first emission area ELA_1 and the first transmission area TA_1 in the third direction DR3.

[0181] The light transmission layer TPL may have a light transmission pattern that transmits incident light. For example, as described above, the emission light LE provided from the first light emitting element may be blue light, and may pass through the light transmission layer TPL and the first filter pattern region 321a of the first color filter 321 to be emitted to the outside of the display device 1. For example, the first emission light L1 that passes through the first transmission region TA_1 in the first emission region ELA_1 and is emitted to the outside may be blue light.

[0182] The light transmission layer TPL may include a matrix resin 330. The matrix resin 330 may be made of an organic material having high light transmittance. In an embodiment, the matrix resin 330 may include an organic material such as epoxy resin, acrylic resin, silicone resin, cardo resin, or imide resin, but the embodiment is not limited thereto.

[0183] The light transmission layer TPL may be in contact with (eg, in direct contact with) the second cover layer CPL2 and the bank pattern layer BK. The surface of the light transmission layer TPL may include a concavo-convex pattern that is in contact with and engages with the cover concavo-convex pattern CPL2_P of the second cover layer CPL2. The surface of the light transmission layer TPL may be Figure 5 The top surface (or upper surface) of the light transmitting layer TPL in the embodiment of the present invention.

[0184] In the case where the light transmission layer TPL includes a light scatterer, light may be scattered in random directions regardless of the incident direction of light passing through the first transmission area TA_1. In the case where the total content of the light scatterer included in the light transmission layer TPL is high, the front-side brightness ratio may be high, but the light efficiency is reduced. In addition, the ink having a high content of the light scatterer may have a high viscosity, so that the tact time may be increased during the process.

[0185] In the case where the light transmission layer TPL and the second covering layer CPL2 have a concavo-convex pattern, light passing through the first transmission area TA_1 may be scattered as it passes through the concavo-convex pattern. Although the light transmission layer TPL includes a light scatterer at a low content or does not include a light scatterer, side visibility may be improved by scattering light. Therefore, the display device 1 having the covering concavo-convex pattern CPL2_P may have both high light efficiency and high brightness, and the manufacturing process time may be reduced. In an embodiment, the light transmission layer TPL may not include a light scatterer. TiO included in the light transmission layer TPL 2 The content can be about 0%.

[0186] In addition, the concavo-convex pattern between the light transmitting layer TPL and the second cover layer CPL2 may increase a contact area, and thus may increase an adhesive strength between the light transmitting layer TPL and the second cover layer CPL2.

[0187] The light transmission layer TPL may have a refractive index equal to or similar to that of the second cover layer CPL2. In an embodiment, the refractive index of the light transmission layer TPL may be in a range of about 1.40 to about 1.70. In an embodiment, the refractive index of the light transmission layer TPL may be greater than that of the low refractive index layer LR, and the difference between the refractive index of the light transmission layer TPL and the refractive index of the low refractive index layer LR may be in a range of about 0.30 to about 0.60. In the case where the light transmission layer TPL does not have a light scatterer, the refractive index of the second cover layer CPL2 and the refractive index of the base resin 330 may be the same as each other.

[0188] The first wavelength conversion layer WCL1 may be disposed in a space separated by the embankment pattern layer BK, and may overlap the second emission area ELA_2 and the second transmission area TA_2 in the third direction DR3. The first wavelength conversion layer WCL1 may contact (e.g., directly contact) the second cover layer CPL2 and the embankment pattern layer BK. A surface of the first wavelength conversion layer WCL1 may contact the second surface CPL2_S2 of the second cover layer CPL2, and the surface of the first wavelength conversion layer WCL1 may be substantially flat. The surface of the first wavelength conversion layer WCL1 may be Figure 5 The top surface (or upper surface) of the first wavelength conversion layer WCL1 in FIG.

[0189] The first wavelength conversion layer WCL1 may be a wavelength conversion pattern layer that converts or shifts the peak wavelength of incident light to light of another specific peak wavelength to emit light. For example, as described above, the emission light LE provided from the second light emitting element may be blue light, and may pass through the first wavelength conversion layer WCL1 and the second filter pattern region 322a of the second color filter 322, and be converted into green light having a peak wavelength in the range of about 510 nm to about 550 nm to be emitted to the outside of the display device 1. For example, the second emission light L2 that passes through the second transmission region TA_2 in the second emission region ELA_2 and is emitted to the outside may be green light.

[0190] The first wavelength conversion layer WCL1 may include a base resin 330 , light scatterers 331 dispersedly disposed within the base resin 330 , and first wavelength shifters 332 dispersedly disposed within the base resin 330 .

[0191] The light scatterer 331 may have a refractive index different from that of the base resin 330 and form an optical interface with the base resin 330. The light scatterer 331 may be light scattering particles. The light scatterer 331 may scatter light in random directions without substantially converting the wavelength of light passing through the second transmission area TA_2, regardless of the incident direction of the incident light.

[0192] The light scatterer 331 may be a material that scatters at least a portion of the transmitted light, and may include metal oxide particles or organic particles. In an embodiment, the light scatterer 331 may include titanium oxide (TiO 2 )、ZrO 2 )、Alumina(Al 2 O 3 )、Indium oxide(In 2 O 3 ), zinc oxide (ZnO) and tin oxide (SnO 2 ) or the like as the metal oxide, and may include acrylic resin or urethane resin or the like as the organic particles, but the embodiment is not limited thereto.

[0193] The first wavelength shifter 332 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. The first wavelength shifter 332 may convert the emission light LE, which is the blue light provided from the second light emitting element, into green light having a single peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0194] In an embodiment, the first wavelength shifter 332 may be a quantum dot, a quantum rod, or a fluorescent substance, but the embodiment is not limited thereto. In the following, in order to simplify the description, the first wavelength shifter 332 will be described as a quantum dot. A quantum dot may be a granular material that emits light of a specific color when an electron transitions from a conduction band to a valence band. A quantum dot may be a semiconductor nanocrystal material. A quantum dot may have a specific band gap depending on its composition and size. Therefore, a quantum dot may absorb light and emit light having an inherent wavelength. Examples of semiconductor nanocrystals of quantum dots may include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, or combinations thereof, etc.

[0195] The II-VI compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, and the ternary compound is selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; the quaternary compound is selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0196] The III-V compound can be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and a mixture thereof; the ternary compound is selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and a mixture thereof; and the quaternary compound is selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and a mixture thereof.

[0197] The IV-VI compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, the ternary compound is selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, and the quaternary compound is selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0198] For example, a binary compound, a ternary compound, or a quaternary compound may be included in a particle at a uniform concentration, or may be included in the same particle divided into a state where the concentration distribution is partially different. In addition, the particle may have a core-shell structure in which a quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element included in the shell decreases toward the center.

[0199] In an embodiment, a quantum dot may have a core-shell structure including a core comprising the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or as a charged layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the element included in the shell decreases toward the center. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, and combinations thereof.

[0200] For example, metal or nonmetal oxides may be binary compounds (such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and NiO) or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2O 4 and CoMn 2 O 4 ), but the embodiment is not limited thereto.

[0201] For example, the semiconductor compound may be, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP or AlSb, but the embodiment is not limited thereto.

[0202] The light emitted from the first wavelength shifter 332 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the purity and reproducibility of the color displayed by the display device 1 may be further improved. For example, the light emitted from the first wavelength shifter 332 may be emitted in various directions regardless of the incident direction of the incident light. Therefore, the side visibility of the second color displayed in the second transmission area TA_2 may be improved.

[0203] Some of the emission light LE provided from the second light emitting element may pass through the first wavelength conversion layer WCL1 and be emitted without being converted into green light by the first wavelength shifter 332. Among the emission light LE, a component whose wavelength may not be converted by the first wavelength conversion layer WCL1 and incident on the second filter pattern area 322a of the second color filter 322 may be blocked by the second filter pattern area 322a. Among the emission light LE, the green light converted by the first wavelength conversion layer WCL1 may pass through the second filter pattern area 322a and may be emitted to the outside. For example, the second emission light L2 emitted to the outside of the display device 1 through the second transmission area TA_2 may be green light.

[0204] The second wavelength conversion layer WCL2 may be disposed in a space partitioned by the bank pattern layer BK and may overlap the third emission area ELA_3 and the third transmission area TA_3 in the third direction DR3. The second wavelength conversion layer WCL2 may contact (eg, directly contact) the second cover layer CPL2 and the bank pattern layer BK.

[0205] The second wavelength conversion layer WCL2 may be a wavelength conversion pattern layer that converts or shifts the peak wavelength of incident light to another specific peak wavelength of light to emit light. For example, as described above, the emission light LE provided from the third light emitting element may be blue light, and may pass through the second wavelength conversion layer WCL2 and the third filter pattern region 323a of the third color filter 323, and be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm to be emitted to the outside of the display device 1. For example, the third emission light L3 that passes through the third transmission region TA_3 in the third emission region ELA_3 and is emitted to the outside may be red light.

[0206] The second wavelength conversion layer WCL2 may include a base resin 330 , light scatterers 331 dispersedly disposed within the base resin 330 , and second wavelength shifters 333 dispersedly disposed within the base resin 330 .

[0207] The second wavelength shifter 333 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. The second wavelength shifter 333 may convert the emission light LE, which is the blue light provided from the third light emitting element, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm, and emit the red light. The second wavelength shifter 333 may convert not only blue light but also green light into red light, and emit the red light. In an embodiment, the second wavelength shifter 333 may be a quantum dot, a quantum rod, or a fluorescent substance, but the embodiment is not limited thereto. The case where the second wavelength shifter 333 is a quantum dot has substantially the same construction as the case where the first wavelength shifter 332 is a quantum dot as described above, so for the sake of convenience of description, its description will be omitted.

[0208] Some of the emission light LE provided from the third light emitting element may pass through the second wavelength conversion layer WCL2 and be emitted without being converted into red light by the second wavelength shifter 333. Among the emission light LE, a component whose wavelength may not be converted by the second wavelength conversion layer WCL2 and may be incident on the third filter pattern area 323a of the third color filter 323 may be blocked by the third filter pattern area 323a. Among the emission light LE, the red light converted by the second wavelength conversion layer WCL2 may pass through the third filter pattern area 323a and may be emitted to the outside. For example, the third emission light L3 emitted to the outside of the display device 1 through the third transmission area TA_3 may be red light.

[0209] The third cover layer CPL3 of the light transmission part 300 may be disposed on the bank pattern layer BK, the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2, and may be used to prevent impurities such as moisture or air from the outside from penetrating and damaging or contaminating the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2. The third cover layer CPL3 may cover the light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2.

[0210] As described above, the filling part 500 may be disposed between the light emitting part 100 and the light transmitting part 300 to fill the space between the light emitting part 100 and the light transmitting part 300. In an embodiment, the filling part 500 may be in contact with (e.g., in direct contact with) the upper inorganic encapsulation layer TFEc of the thin film encapsulation layer TFE of the light emitting part 100 and the third cover layer CPL3 of the light transmitting part 300, but the embodiment is not limited thereto.

[0211] In an embodiment, the filling portion 500 may be made of a material having an extinction coefficient that is substantially 0. There may be a correlation between the refractive index and the extinction coefficient, and as the refractive index decreases, the extinction coefficient may also decrease. For example, in the case where the refractive index is about 1.7 or less, the extinction coefficient may be substantially close to about 0. In an embodiment, the filling portion 500 may be made of a material having a refractive index of about 1.7 or less, so that the light provided from the self-luminous element can be prevented or minimized from being absorbed when passing through the filling portion 500. In an embodiment, the filling portion 500 may be made of an organic material having a refractive index of about 1.4 to about 1.6.

[0212] Fig.10 is a schematic cross-sectional view of a display device 1_1 according to another embodiment. Fig.11 yes Fig.10 An enlarged schematic diagram of area A3. Figure 5 compared to, Fig.10 and Fig.11 The difference is that the second surface CPL2_S2 of the second cover layer CPL2_1 in the first transmission area TA_1 is substantially flat, and the first color filter 321 includes a light scatterer 324 .

[0213] The light transmission layer TPL can be manufactured by an inkjet process, and at this time, the viscosity and thickness of the ink can be important process variables. In the case where the light transmission layer TPL includes a high content of light scatterers, the viscosity of the ink increases, making it difficult to control the process. In the case where the content of the light scatterer is fixed and the thickness of the ink increases, the tact time may increase. For example, the color filter can be manufactured by coating or deposition that is not affected by the content of the light scatterer compared to the inkjet process. In the case where the first color filter 321 in addition to the light transmission layer TPL includes a light scatterer, process control can be facilitated and a scattering effect can be obtained.

[0214] The above description of the light scatterer 331 of the first wavelength conversion layer WCL1 may be applied to the light scatterer 324 included in the first color filter 321. The light scatterer 324 of the first color filter 321 may be the same as or different from the light scatterer 331 of the first wavelength conversion layer WCL1.

[0215] The first wavelength conversion layer WCL1 and the second wavelength conversion layer WCL2 may include a light scatterer 331, and the light transmission layer TPL, the second color filter 322, and the third color filter 323 may not include the light scatterer. 2 The content can be about 0%.

[0216] Fig.12 is a schematic cross-sectional view of a display device according to yet another embodiment. Fig.11 The difference is that the second surface CPL2_S2 of the second cover layer CPL2_2 in the first transmission area TA_1 includes the covering concavo-convex pattern CPL2_P_1. As described above, since the second surface CPL2_S2 of the second cover layer CPL2_2 includes the covering concavo-convex pattern CPL2_P_1, the display device can have excellent scattering effect and high light efficiency.

[0217] Hereinafter, a method of manufacturing the display device 1 will be described.

[0218] Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 is a schematic diagram for explaining a process of manufacturing the display device 1 according to the embodiment.

[0219] First, refer to Fig.13 According to an embodiment, the color filter layer 320 may be formed on the second substrate 310 of the display device 1 , and the low refractive index layer LR may be formed on the color filter layer 320 .

[0220] As described above, in the color filter layer 320, the first color filter 321, the third color filter 323, and the second color filter 322 may be sequentially stacked with each other. The first color filter 321 may be formed to overlap with the first transmission area TA_1 and the light blocking area BA, but may be formed not to overlap with the second transmission area TA_2 and the third transmission area TA_3. The third color filter 323 may be formed to overlap with the third transmission area TA_3 and the light blocking area BA, but may be formed not to overlap with the first transmission area TA_1 and the second transmission area TA_2. The second color filter 322 may be formed to overlap with the second transmission area TA_2 and the light blocking area BA, but may be formed not to overlap with the first transmission area TA_1 and the third transmission area TA_3. In an embodiment, each of the color filter layer 320 and the low refractive index layer LR may be formed by a deposition process. In an embodiment, the first color filter 321 may be formed using a material including the light scatterer 324 , the second color filter 322 may be formed using a material not including the light scatterer 324 , and the third color filter 323 may be formed using a material not including the light scatterer 324 .

[0221] For example, the second cover layer CPL2 may be formed on the low refractive index layer LR. For example, the process of forming the second cover layer CPL2 may be a deposition process using plasma.

[0222] Reference Fig.14 In the first to third transmission areas TA_1 to TA_3 , the cover concavo-convex pattern CPL2_P may be formed on the top surface (or upper surface) of the second cover layer CPL2 only in the first transmission area TA_1 . The cover concavo-convex pattern CPL2_P may be formed by a dry etching process and a photolithography process.

[0223] Reference Fig.15 , the bank pattern layer BK may be formed to overlap the light blocking area BA between the spaced apart transmission areas.

[0224] Reference Fig.16 , Fig.17 and Fig.18 , a light transmission layer TPL may be formed in the first transmission area TA_1, a first wavelength conversion layer WCL1 may be formed in the second transmission area TA_2, and a second wavelength conversion layer WCL2 may be formed in the third transmission area TA_3. In an embodiment, ink may be ejected to the transmission area by an inkjet method using a nozzle. Fig.16 , Fig.17 and Fig.18It is shown that the second wavelength conversion layer WCL2, the first wavelength conversion layer WCL1, and the light transmission layer TPL are sequentially formed, but the embodiment is not limited thereto. The light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 may be formed in this order, or the order may be partially changed. The light transmission layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 may be formed to have a height lower than the top surface (or upper surface) of the bank pattern layer BK.

[0225] Reference Fig.19 , a third cover layer CPL3 may be formed on the light transmission layer TPL, the first wavelength conversion layer WCL1 , the second wavelength conversion layer WCL2 , and the bank pattern layer BK.

[0226] Reference Fig. 20 , the light emitting portion 100 equipped with a light emitting element and a circuit, the filling portion 500 , and the sealing member 700 may be separately prepared, and the light emitting portion 100 and the light transmitting portion 300 may be combined together via the sealing member 700 to manufacture the display device 1 .

[0227] In summarizing the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the embodiments without departing substantially from the principles of the disclosure. Therefore, the embodiments of the disclosed invention are used in a general and descriptive sense only and not for a limiting purpose.

Claims

1. A display device, comprising: A first substrate including a first emission region and a second emission region; A first light-emitting element and a second light-emitting element, wherein the first light-emitting element overlaps with the first emission region, the second light-emitting element overlaps with the second emission region, and the first light-emitting element and the second light-emitting element are disposed on the first substrate; A light-transmitting layer, disposed on the first light-emitting element; A first wavelength conversion layer, disposed on the second light emitting element; a covering layer, disposed on the light transmission layer and the first wavelength conversion layer; A low refractive index layer, disposed on the cover layer; as well as A second substrate is disposed on the low refractive index layer, The cover layer includes a first surface facing the low refractive index layer and a second surface opposite to the first surface. In the first emission region, the second surface of the cover layer includes a cover concavo-convex pattern, and In the second emission region, the second surface of the cover layer is flat.

2. The display device according to claim 1, wherein: The first wavelength conversion layer includes a light scatterer, and The light-transmitting layer does not include a light scatterer.

3. The display device according to claim 1, wherein: The covering concavo-convex pattern includes a plurality of concave portions, and Each of the plurality of concave portions of the covering concavo-convex pattern is concave in a thickness direction.

4. The display device according to claim 1, wherein: The covering concavo-convex pattern includes a plurality of island patterns separated from each other.

5. The display device according to claim 1, wherein: The covering concavo-convex pattern includes a linear pattern extending in one direction.

6. The display device according to claim 3, wherein: A cross-section of each of the plurality of concave portions of the covering concavo-convex pattern has a portion of a semicircular shape, a semi-elliptical shape, or a circular shape.

7. The display device according to claim 3, wherein: The depth of each of the plurality of concave portions of the covering concavo-convex pattern is equal to or greater than 0.1 μm, and A width of each of the plurality of concave portions of the covering concavo-convex pattern is equal to or greater than 3 μm.

8. The display device according to claim 3, wherein: The distance between adjacent concave portions is equal to or greater than 1.5 μm.

9. The display device according to claim 1, wherein: The refractive index of the light transmission layer is in the range of 1.40 to 1.

70.

10. The display device according to claim 1, wherein: The refractive index of the cover layer is greater than the refractive index of the low refractive index layer, and A difference between the refractive index of the cover layer and the refractive index of the low refractive index layer is in the range of 0.30 to 0.

60.

11. The display device according to claim 9, wherein: The refractive index of the cover layer is in the range of 1.40 to 1.70, and The refractive index of the low refractive index layer is in the range of 1.10 to 1.

30.

12. The display device according to claim 1, wherein: The upper surface of the light transmission layer contacts the second surface of the cover layer and includes a concavo-convex pattern engaged with the cover concavo-convex pattern.

13. The display device according to claim 1, wherein: The second surface of the cover layer contacts an upper surface of the first wavelength conversion layer in the second emission region, and The upper surface of the first wavelength conversion layer is flat.

14. The display device according to claim 1, wherein: The first wavelength conversion layer includes a base resin and a first wavelength conversion shifter.

15. A display device, comprising: A first substrate including a first emission region and a second emission region; A first light-emitting element and a second light-emitting element, wherein the first light-emitting element overlaps with the first emission region, the second light-emitting element overlaps with the second emission region, and the first light-emitting element and the second light-emitting element are disposed on the first substrate; A light-transmitting layer, disposed on the first light-emitting element; A first wavelength conversion layer, disposed on the second light emitting element; a covering layer, disposed on the light transmission layer and the first wavelength conversion layer; A low refractive index layer, disposed on the cover layer; a first color filter disposed on the low refractive index layer, overlapping the first emission region, and comprising a light scatterer; a second color filter disposed on the low refractive index layer and overlapping the second emission region; as well as The second substrate is disposed on the first color filter and the second color filter.

16. The display device according to claim 15, wherein: The first wavelength conversion layer includes a light scatterer, and The light transmitting layer and the second color filter do not include a light scatterer.

17. The display device according to claim 16, wherein: The cover layer includes a first surface facing the low refractive index layer and a second surface opposite to the first surface, In the first emission region, the second surface of the cover layer includes a cover concavo-convex pattern, and In the second emission region, the second surface of the cover layer is flat.

18. A method for manufacturing a display device, the method comprising: preparing a substrate including a first transmission area, a second transmission area, and a light blocking area surrounding the first transmission area and the second transmission area; forming a color filter layer on the substrate, forming a low refractive index layer on the color filter layer, and forming a cover layer on the low refractive index layer; forming a covering concavo-convex pattern on the upper surface of the covering layer in the first transmission region; forming a bank pattern layer on the upper surface of the cover layer in the light blocking region; as well as A light transmitting layer is formed on the upper surface of the cover layer in the first transmitting region.

19. The method according to claim 18, further comprising: Between the step of forming the bank pattern layer and the step of forming the light transmission layer or after the step of forming the light transmission layer, a first wavelength conversion pattern layer is formed on the upper surface of the cover layer in the second transmission region.

20. The method according to claim 18, wherein: The step of forming the color filter layer on the substrate comprises: forming a first color filter on the substrate to overlap the first transmission area and not to overlap the second transmission area; and forming a second color filter on the substrate and the first color filter to overlap the second transmission area and not overlap the first transmission area, wherein the first color filter comprises a light scatterer, and The second color filter does not include a light scatterer.

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