A method, device, equipment and medium for adjusting voltage of microchannel plate

Abstract

The present application relates to the field of semiconductor electronic detection technology, and in particular to a microchannel plate voltage adjustment method, device, equipment and medium, wherein an initial voltage parameter is analyzed to obtain a first voltage parameter to be adjusted; a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained, a first voltage optimization analysis is performed on the spot index group information, and when the spot index group information reaches the optimization condition, a first optimized voltage parameter corresponding to the spot index group information is obtained; an initial voltage parameter is analyzed to obtain a second voltage parameter to be adjusted; a second parameter test is performed on the second voltage parameter to be adjusted and a test result is obtained, a second voltage optimization analysis is performed on the spot index group information, and when the spot index group information reaches the optimization condition, a second optimized voltage parameter corresponding to the spot index group information is obtained, taking into account high resolution and high gain of the detector, and improving the stability of the detector.

Description

Technical Field

[0001] The present application relates to the field of semiconductor electronic detection technology, and in particular to a method, device, equipment and medium for adjusting voltage of a microchannel plate. Background Art

[0002] In today's science and technology, the rapid and accurate identification of low-content metal elements, especially their application in complex environments, is a difficult problem that needs to be solved urgently. Although existing technologies can realize the detection of elements to a certain extent, they all have different limitations. For example, X-ray absorption technology is difficult to clearly identify the composition of materials and metal forms due to the ambiguity of its imaging; fluorescence technology is affected by weak signal intensity and noise interference, resulting in difficulty in accurate identification; and although X-ray photoelectron spectroscopy technology can accurately distinguish low-content elements, its high vacuum requirements and detection equipment stability issues lead to loss or failure after long-term use, limiting its application in the aerospace field.

[0003] Conventional detectors use a single microchannel plate (MCP) to amplify electron gain and detect under high vacuum conditions. By setting a bias voltage on the MCP, electrons entering the MCP are accelerated under an electric field to generate secondary electrons on the inner wall of the MCP and then amplified. As the bias voltage increases, the maximum gain of a single MCP reaches ~10 4 Then it is saturated, and higher gain cannot be achieved, which cannot meet the industry's demand for high counting rate; using two or three-stage microchannel plates, arranged in V or Z shape, can be amplified step by step. Under high bias conditions, although it can meet more than 10 6 The gain requirement is met, but the electron bunch is easy to diverge after the three-stage amplification, and the ions generated by the impact ionization in the MCP are accelerated by the external electric field and move to the MCP input end, causing feedback signals. This physical process will cause a large number of ions generated by the impact ionization to accumulate in the channel, reducing the MCP gain and increasing the background noise of the device. The current implementation method cannot take into account both resolution and gain, and the above problems need to be solved. Summary of the invention

[0004] In order to take into account the high resolution and high gain of the detector, ensure the element recognition rate while also being able to use it for a long time to extend its life and improve the stability of the detector, the present application provides a microchannel plate voltage adjustment method, device, equipment and medium, which adopts the following technical solutions:

[0005] In a first aspect, the present application provides a method for adjusting a voltage of a microchannel plate, comprising:

[0006] Get the initial voltage parameters;

[0007] Analyzing the initial voltage parameter to obtain a first voltage parameter to be adjusted;

[0008] When the initial voltage parameter is fixed, a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a first voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches an optimization condition, a first optimized voltage parameter corresponding to the spot index group information is obtained;

[0009] Analyzing the initial voltage parameter to obtain the second voltage parameter to be adjusted;

[0010] When the initial voltage parameters are fixed, a second parameter test is performed on the second voltage parameter to be adjusted and the test results are obtained to obtain the spot index group information, and a second voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, the second optimized voltage parameter corresponding to the spot index group information is obtained.

[0011] Preferably, the specific steps of analyzing the initial voltage parameters to obtain the first voltage parameter to be adjusted are:

[0012] First preset voltage ratio information is obtained, and a first voltage parameter to be adjusted is determined according to the initial voltage parameter and the first preset voltage ratio information.

[0013] Preferably, the specific steps of analyzing the initial voltage parameters to obtain the second voltage parameter to be adjusted are:

[0014] The second preset voltage ratio information is obtained, and the second voltage parameter to be adjusted is determined according to the initial voltage parameter and the second preset voltage ratio information.

[0015] Preferably, the light spot index group information includes light spot intensity information, light spot size information and light spot center position information.

[0016] Preferably, the first voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage and an initial second-level MCP bias parameter.

[0017] Preferably, the first parameter test is performed on the first voltage parameter to be adjusted and the test result is obtained to obtain the spot index group information, and the first voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, the specific steps of obtaining the first optimized voltage parameter corresponding to the spot index group information are:

[0018] When the initial first MCP gap voltage and the initial second-level MCP bias parameters are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameters are obtained;

[0019] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated, and when the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are fixed, the corresponding spot index group information in the initial first MCP gap voltage scanning process is obtained, and when the spot index group information meets the second optimization condition, the first updated MCP gap voltage is obtained;

[0020] Update the initial first-level MCP bias parameter according to the first-level updated MCP bias parameter, update the initial first MCP gap voltage according to the first updated MCP gap voltage, obtain the corresponding spot index group information in the initial second-level MCP bias parameter increment process when the initial first-level MCP bias parameter and the initial first MCP gap voltage parameter are fixed, and obtain the second-level updated MCP bias parameter when the spot index group information satisfies the third optimization condition;

[0021] Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, and a second-level updated MCP bias parameter for optimizing the secondary microchannel plate voltage.

[0022] Preferably, the second voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage, an initial second-level MCP bias parameter, an initial second MCP gap voltage and an initial third-level MCP bias parameter.

[0023] Preferably, the second parameter test is performed on the second voltage parameter to be adjusted and the test result is obtained to obtain the spot index group information, and the second voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, the specific steps of obtaining the second optimized voltage parameter corresponding to the spot index group information are:

[0024] When the initial first MCP gap voltage, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameter is obtained;

[0025] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; when the initial first-level MCP bias parameter, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first MCP gap voltage scanning process is obtained; when the spot index group information satisfies the second optimization condition, the first updated MCP gap voltage is obtained;

[0026] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are fixed, the spot index group information in the initial second MCP gap voltage scanning process is obtained; when the spot index group information satisfies the fourth optimization condition, the second updated MCP gap voltage is obtained;

[0027] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; according to the second-level updated MCP gap voltage, the initial second MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage parameter, the initial second-level MCP bias parameter, and the initial second MCP gap voltage are fixed, the corresponding spot index group information in the initial three-level MCP bias parameter increment process is obtained; when the spot index group information satisfies the third optimization condition, the three-level updated MCP bias parameter is obtained;

[0028] Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, a second-level updated MCP gap voltage, and a third-level updated MCP bias parameter for optimizing the three-level microchannel plate voltage.

[0029] Preferably, when the spot index group information satisfies the first optimization condition, the specific steps of obtaining the first-level updated MCP bias parameter are:

[0030] When the spot intensity information is greater than 0.5 times the maximum spot intensity information, an initial first-level MCP bias parameter with the smallest spot size information is obtained to obtain a first-level updated MCP bias parameter.

[0031] Preferably, when the spot index group information satisfies the second optimization condition, the specific steps of obtaining the first updated MCP gap voltage are:

[0032] An initial first MCP gap voltage with minimum spot size information is acquired to obtain a first updated MCP gap voltage.

[0033] Preferably, when the spot index group information satisfies the third optimization condition, the specific steps of obtaining the secondary updated MCP bias parameters are:

[0034] The maximum initial secondary MCP bias parameter is obtained when the spot intensity information is less than 0.9 times the maximum spot intensity information, and the secondary updated MCP bias parameter is obtained.

[0035] Preferably, when the spot index group information satisfies the fourth optimization condition, the specific steps of obtaining the second updated MCP gap voltage are:

[0036] The spot index group information is obtained when the difference between two consecutive measurements of the spot center position information is less than 2 times the spot size information, the initial second MCP gap voltage with the smallest spot size information is obtained, and the second updated MCP gap voltage is obtained.

[0037] Preferably, it also includes:

[0038] Environmental information, optical path information and usage time information are obtained, and when any one of the environmental information, optical path information and usage time information meets a preset adaptive judgment threshold, the initial voltage parameter is analyzed to obtain a first voltage parameter to be adjusted or a second voltage parameter to be adjusted.

[0039] In a second aspect, the present application provides a microchannel plate voltage adjustment device, comprising:

[0040] An initial parameter acquisition module is used to acquire initial voltage parameters;

[0041] A first analysis module, used for analyzing the initial voltage parameter to obtain a first voltage parameter to be adjusted;

[0042] A first voltage optimization module is used to perform a first parameter test on a first voltage parameter to be adjusted and obtain a test result when the initial voltage parameter is fixed, obtain spot index group information, perform a first voltage optimization analysis on the spot index group information, and obtain a first optimized voltage parameter corresponding to the spot index group information when the spot index group information meets the optimization condition;

[0043] A second analysis module, used for analyzing the initial voltage parameter to obtain a second voltage parameter to be adjusted;

[0044] The second voltage optimization module is used to perform a second parameter test on the second voltage parameter to be adjusted and obtain the test result when the initial voltage parameter is fixed, obtain the spot index group information, perform a second voltage optimization analysis on the spot index group information, and obtain the second optimized voltage parameter corresponding to the spot index group information when the spot index group information reaches the optimization condition.

[0045] In a third aspect, the present application provides a microchannel plate voltage adjustment device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the microchannel plate voltage adjustment method as described above.

[0046] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, wherein the computer program is configured to execute the microchannel plate voltage adjustment method as described above when running.

[0047] In summary, compared with the prior art, the technical solution provided by this application has at least the following beneficial effects:

[0048] The present application obtains an initial voltage parameter for fixing, and analyzes the initial voltage parameter. When a first voltage parameter to be adjusted is obtained, a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained, and the spot index group information of the detector is obtained. A first voltage optimization analysis is performed according to the spot index group information, and the optimization analysis result is output. The first optimized voltage parameter is used to adjust the secondary microchannel plate voltage. When a second voltage parameter to be adjusted is obtained, a second parameter test is performed on the second voltage parameter to be adjusted and a test result is obtained, and the spot index group information of the detector is obtained. A second voltage optimization analysis is performed according to the spot index group information, and the optimization analysis result is output. The second optimized voltage parameter is used to adjust the tertiary microchannel plate voltage. The present application quickly adjusts the microchannel plate voltage according to the index group, reduces the short life and high noise disadvantages caused by setting the maximum bias voltage for all microchannel plates, takes into account the high resolution and high gain of the detector, ensures the element recognition rate, and can also be used for a long time to extend the life, thereby improving the stability of the detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 It is a flow chart of a method for adjusting voltage of a microchannel plate described in an embodiment of the present application.

[0050] Figure 2 It is a module schematic diagram of a microchannel plate voltage adjustment device described in an embodiment of the present application.

[0051] Description of reference numerals:

[0052] 1. Initial parameter acquisition module; 2. First analysis module; 3. First voltage optimization module; 4. Second analysis module; 5. Second voltage optimization module. DETAILED DESCRIPTION

[0053] The following combination Figure 1-Figure 2 The present application is described in further detail. The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments and are not intended to be limiting.

[0054] Rapid and accurate identification of low-content metal elements is one of the difficult problems to be solved at present. Conventional technologies include: 1. X-ray absorption technology. Since metal elements have a large absorption coefficient for radiation, but the element content in the material is rare and the internal distribution is random and uneven, the imaging result is not obvious, which causes great interference to the identification of specific substances and their content. The existing technology cannot accurately and quickly identify the internal material composition and metal form at the same time; 2. Fluorescence technology, photofluorescence, can generate characteristic fluorescence by stimulating surface elements and then detect the fluorescence wavelength. The generated fluorescence intensity is low, and the isotropic divergence is achieved, so that the fluorescence signal of the detector becomes weak, which is easily misjudged as a non-target metal element, and the incident light is mixed with the generated fluorescence to be detected, which increases the difficulty of accurate identification; 3. X-ray photoelectron spectroscopy technology. Under the excitation of X-rays, electrons in different shells escape into the vacuum and are detected with different kinetic energies in a high vacuum environment. Different kinetic energies represent the "fingerprints" of different elements. By detecting the kinetic energy of the escaped electrons, different element categories can be determined. Under different potential conditions in the inner and outer hemispheres, electrons with different kinetic energies are deflected to different positions at the exit of the hemisphere. Position-sensitive detectors are placed at the exit of the hemisphere. Electrons at different positions are first multiplied into electron bunches through the microchannel plate of the detector and then reach the fluorescent screen. The fluorescent screen detects electron bunches through CCD imaging. This technology can accurately distinguish low-content elements and requires a high vacuum environment. Under existing technical conditions, if the air is broken or used for a long time, the internal suspended particles will increase significantly. Under high bias conditions, the microchannel plate and other components will easily break down and short-circuit. In severe cases, sparks will occur, directly destroying the entire set of detectors. For the fields of aerospace ion detection and semiconductor wafer inspection, replacing detectors will be extremely inconvenient and difficult. Although conventional detectors can meet more than 10 in the best case, 6 The gain requirement is met, but the electron bunch is easy to diverge after the three-stage amplification, and the ions generated by the impact ionization in the MCP are accelerated by the external electric field and move toward the MCP input end, causing feedback signals. This physical process will cause a large number of ions generated by the impact ionization to accumulate in the channel, reducing the MCP gain and increasing the background noise of the device.

[0055] The current technology applies a low bias voltage to the microchannel plate, and the gain of the microchannel plate is low. The electrons cannot form a sufficient number of electron bunches, which reduces the detection efficiency and is easily misidentified as non-target elements. All existing detectors set a high bias voltage for the microchannel plate, and the microchannel plate has a high gain, but a short life; there is a lack of protection between the multi-stage microchannel plates, and the voltage loaded on each stage of the microchannel plate has the disadvantage of not being able to take into account high gain, high resolution and long life at the same time; the two-stage microchannel plate amplification cannot meet the industry's demand for higher gain amplification of weak signals. Although the three-stage microchannel plate can obtain a larger gain, the electron movement distance from the microchannel plate entrance to the microchannel exit becomes longer, and the electron bunch diffusion spot generated after multiplication becomes larger and the center of mass position shifts, resulting in inconsistent center of mass positions before and after the incident microchannel plate, reducing the consistency of spatial position; microchannel plates are usually directly stacked and used, and the voltage applied to a single microchannel plate is distributed according to the body resistance of each microchannel plate. The voltage loading method is single, and it is impossible to independently and flexibly control each stage of the microchannel plate to maximize its performance. How to maintain high gain, high resolution and long life is very important for expensive equipment that is difficult to replace in the aerospace and semiconductor fields. Therefore, the present application provides a microchannel plate voltage adjustment method, device, equipment and medium, which can achieve high resolution, high gain and long life by changing the bias voltage of a multi-stage microchannel plate.

[0056] Reference Figure 1 The present application relates to a method for adjusting the voltage of a microchannel plate, which specifically includes:

[0057] Step S1: obtaining initial voltage parameters;

[0058] Step S2: Analyze the initial voltage parameter to obtain the first voltage parameter to be adjusted;

[0059] Step S3: When the initial voltage parameter is fixed, a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a first voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, a first optimized voltage parameter corresponding to the spot index group information is obtained;

[0060] Step S4: Analyze the initial voltage parameter to obtain the second voltage parameter to be adjusted;

[0061] Step S5: When the initial voltage parameters are fixed, a second parameter test is performed on the second voltage parameter to be adjusted and the test results are obtained to obtain the spot index group information, and a second voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, a second optimized voltage parameter corresponding to the spot index group information is obtained.

[0062] Specifically, the method of the present application is applied to the detector. First, the initial voltage parameters need to be obtained to fix and analyze the initial voltage parameters. When the first voltage parameter to be adjusted is obtained through analysis, the voltage of the secondary microchannel plate is optimized. At this time, the first parameter test is performed on the first voltage parameter to be adjusted and the test result is obtained to obtain the spot index group information of the detector. The first voltage optimization analysis is performed according to the spot index group information, and the optimization analysis result is output. The first optimized voltage parameter is used to adjust the voltage of the secondary microchannel plate. When the second voltage parameter to be adjusted is obtained through analysis, the voltage of the tertiary microchannel plate is optimized. At this time, the second parameter test is performed on the second voltage parameter to be adjusted and the test result is obtained to obtain the spot index group information of the detector. The second voltage optimization analysis is performed according to the spot index group information, and the optimization analysis result is output. The second optimized voltage parameter is used to adjust the voltage of the tertiary microchannel plate. The present application quickly adjusts each level voltage and gap voltage according to the gain and resolution, thereby reducing the disadvantages of short life and high noise caused by setting the maximum bias voltage. By flexibly adjusting the gap voltage, the interference of stray electrons on the next-level microchannel is reduced. It can provide the gain multiples of the multi-layer MCP, and maintain the resolution capability of the single-layer MCP, ensuring the consistency of the position of entering and exiting the single-layer MCP, taking into account the high resolution and high gain of the detector, ensuring the element recognition rate while also being able to be used for a long time to extend the life and improve the stability of the detector.

[0063] The detector of the present application mainly includes a microchannel plate, a fluorescent screen, a charge-coupled device and a readout electronic part. The microchannel plate is MCP, and the charge-coupled device is CCD. The detection process includes electron multiplication, charge collection, charge information extraction and transformation, and detector readout. Electron multiplication is mainly completed by MCP; charge collection, the electron cloud group output by MCP is collected by the fluorescent screen and the information is processed; charge information extraction and transformation, the center of mass of the electron cloud group is located and information is extracted through the spot information formed by the fluorescent screen and CCD; detector readout, after the collected electron cloud group is converted into a signal, the analog signal generated is converted into a digital signal through the pre-amplifier and analog-to-digital conversion chip, and then transmitted to the PC for data processing and data analysis to extract relevant information of the target to be measured.

[0064] The microchannel plate, i.e. MCP, of the present application is a special optical fiber device with the advantages of small size, light weight, good resolution, high gain, low noise and low operating voltage. MCP utilizes the secondary electron emission characteristics to multiply the electrons on the inner wall channel through high-speed collisions, achieving an electron current increase of more than ten thousand times, making MCP widely used in photomultiplier tubes, image intensifiers, low-light televisions, X-ray image intensifiers, high-speed oscilloscopes, as well as photon counting, X-rays, ultraviolet photons, electrons, ions, charged particles, and subatomic particle detection. Based on the MCP detector, which can detect photons and electrons, it is mainly composed of components such as input window, cascade MCP, charge sensing layer, etc. MCP is an array panel composed of millions of multiplication channels. The channel aperture is usually a few μm to tens of μm, and the gain of a single MCP is 10 3 ~10 4 , a higher gain can be obtained by cascading multiple chips. The commonly used cascading methods are two "V" type or three "Z" type cascading. The gain after cascading can reach 10 6 ~10 8 In order to achieve a higher upper limit of the count rate and maintain a longer lifespan, the three-stage microchannel plate of this application needs to flexibly and independently control the bias voltage V applied to the single-chip MCP. M , the voltage between MCP V p , as well as the acceleration voltage V1 before the electron is incident on the microchannel plate MCP and the voltage V A .

[0065] This application is based on gain, spatial resolution and service life considerations. The voltage adjustment of each level follows: 1. The bias voltage V loaded on the single-chip MCP M The biggest influence on gain determines the maximum probability of electronic detection; 2. Selecting a smaller VM helps protect MCP, prolongs service life, and is less likely to cause breakdown; 3. The front-stage amplification focuses on position resolution, and the rear-stage amplification focuses on gain. In principle, the bias voltage applied to each MCP increases from the front stage to the rear stage, that is, V M1 ≤V M2 ≤V M3 , independently controlled according to gain and spatial resolution; 4. Voltage divider ratio V1:V M :V P :V A =8:20:1:8, as the initial ratio before adjustment, adjusted to achieve the best performance of high gain and high resolution; 5. The voltage V between MCP p It can be positive bias or negative bias, which affects the center of mass position of the electron cloud bunch before entering the next MCP; 6. Set the gear for the gain and spatial resolution finally achieved by the multi-stage MCP, and fine-tune V M , V p , ensuring high gain and high resolution at the same time. For the secondary microchannel plate detector, the total voltage VT =V1+V M1 +V P1 +V M2 +V A .

[0066] This application obtains the initial voltage parameters, specifically obtaining V1 and V A , V1 is the acceleration voltage before the electron is incident on the microchannel plate MCP, V A is the voltage from the microchannel plate to the phosphor screen.

[0067] As one implementation manner, the light spot index group information includes light spot intensity information, light spot size information and light spot center position information.

[0068] Specifically, the spot index group information of the embodiment of the present application is a group of indicators (Gain, FWHM, M) for evaluating detector performance, where Gain represents the gain generated by the secondary microchannel plate detector, FWHM represents the diffuse spot size, and M represents the center of mass position of the electron cloud bunch.

[0069] The specific measurement of Gain is that after the electrons pass through the secondary microchannel plate, they are multiplied into electron bunches and reach the fluorescent screen, and the generated fluorescence is detected by the CCD camera. The light spot information formed by the fluorescence on the CCD includes the overall intensity of the light spot, the center of the light spot, and the size of the light spot. The overall intensity of the light spot means that the fluorescence generated by the electron bunch after hitting the fluorescent screen is sensed by the pixels on the CCD. The grayscale values ​​of all pixels on the CCD camera are added and the dark field grayscale value is subtracted. The dark field grayscale value refers to the sum of the grayscale values ​​of all pixels in the dark image collected by the CCD camera when there is no electron bunch entering. The overall intensity of the light spot represents the electron beam current intensity of the electron bunch. After fixing V1 and VA, the CCD is in the linear response working range without overexposure or underexposure. The measured overall intensity of the light spot is linearly related to the gain generated by the electrons passing through the multi-stage microchannel plate.

[0070] The specific measurement of FWHM and M is that the fluorescence forms a two-dimensional spot distributed in the X and Y directions on the CCD. The photon response of the CCD in the X and Y directions, that is, the image grayscale value, is proportional to the intensity of the two-dimensional spot. The image obtained by the fluorescence on the CCD is first subtracted from the dark field grayscale value, and then the maximum intensity of the spot and the corresponding position coordinates, that is, the maximum grayscale value of the image and the center position coordinates are found. The center position coordinates represent the center of mass position of the electron cloud bunch. Find half of the fluorescence intensity along the X and Y directions respectively, and mark the corresponding X and Y coordinates, subtract them from the X and Y coordinates of the center position respectively, and take the absolute value as the diffuse spot size FWHM in the X and Y directions.

[0071] As one implementation method, the specific steps of analyzing the initial voltage parameter to obtain the first voltage parameter to be adjusted are:

[0072] First preset voltage ratio information is obtained, and a first voltage parameter to be adjusted is determined according to the initial voltage parameter and the first preset voltage ratio information.

[0073] Specifically, the first preset voltage ratio information of the embodiment of the present application is a preset ratio parameter. When it is determined that the current detector is a secondary microchannel plate detector, it is set to V1:V M1 :V P :V M2 :V A =8:20:1:20:8 as the initial ratio before optimization and adjustment, and obtain the acceleration voltage V1 before the microchannel plate MCP and the voltage V from the microchannel plate to the end A In this case, the initial V M1 、V P1 and V M2 , V M1 V is the bias voltage applied to the first-stage MCP, which affects the gain of the first-stage MCP. P1 V is the voltage between the first-stage MCP and the second-stage MCP, which affects the center of mass position and diffuse spot size of the electron cloud bunch before entering the second-stage MCP. M2 It is the bias voltage added to the second-stage MCP, which affects the gain of the second-stage MCP.

[0074] As one implementation manner, the first voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage, and an initial second-level MCP bias parameter.

[0075] Specifically, the embodiment of the present application is based on the principle that the pre-amplification mainly focuses on position resolution, and the post-amplification mainly focuses on gain. M1 、V p1 、V M2 , achieving high gain and high resolution. Considering the actual application, V M1 、V P The impact on spatial resolution is greater, V M2 It has a greater impact on the gain, so while ensuring that the gain is not too low, high spatial resolution adjustment is focused first, and then high gain adjustment is focused.

[0076] As one implementation mode, a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a first voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, the specific steps of obtaining the first optimized voltage parameter corresponding to the spot index group information are as follows:

[0077] When the initial first MCP gap voltage and the initial second-level MCP bias parameters are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameters are obtained;

[0078] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated, and when the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are fixed, the corresponding spot index group information in the initial first MCP gap voltage scanning process is obtained, and when the spot index group information meets the second optimization condition, the first updated MCP gap voltage is obtained;

[0079] Update the initial first-level MCP bias parameter according to the first-level updated MCP bias parameter, update the initial first MCP gap voltage according to the first updated MCP gap voltage, obtain the corresponding spot index group information in the initial second-level MCP bias parameter increment process when the initial first-level MCP bias parameter and the initial first MCP gap voltage parameter are fixed, and obtain the second-level updated MCP bias parameter when the spot index group information satisfies the third optimization condition;

[0080] Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, and a second-level updated MCP bias parameter for optimizing the secondary microchannel plate voltage.

[0081] Specifically, the embodiment of the present application sets V1:V M1 :V P1 :V M2 :V A =8:20:1:20:8, as the initial ratio before optimization adjustment, fixed V1 and V A =T, generally, T value range is 200V-600V, which is determined according to the actual MCP structural parameters, that is, according to the microchannel diameter, microchannel plate thickness, incision direction and inner surface material.

[0082] As one implementation method, when the spot index group information satisfies the first optimization condition, the specific steps of obtaining the first-level updated MCP bias parameter are:

[0083] When the spot intensity information is greater than 0.5 times the maximum spot intensity information, an initial first-level MCP bias parameter with the smallest spot size information is obtained to obtain a first-level updated MCP bias parameter.

[0084] Specifically, after fixing the initial voltage parameters, V M1 :V P1 :V M2 =20:1:20, so V M1is 1000V, V P1 is 50V, V M2 The value is 1000V. At this time, Vp1 and VM2 are fixed. That is, when the initial first MCP gap voltage and the initial secondary MCP bias parameters are fixed, VM1 is scanned and changed. The scanning range is from the minimum working voltage to the maximum working voltage. The minimum working voltage is <200V and the maximum working voltage is >1000V. Record the different V M1 A series of indicator groups (Gain, FWHM, M) collected under the conditions, in which the largest Gain is found and marked as Gain max , and filter out all the conditions that satisfy Gain>Gain max / 2, and then filter again from the filtered indicator group, and take the V corresponding to the minimum FWHM in the indicator group after the first screening. M1-Min-FWHM , as the V M1 , and record the corresponding Gain and M at the same time. The corresponding indicator group is marked as (Gain1, FWHM1, M1).

[0085] As one implementation mode, when the spot index group information satisfies the second optimization condition, the specific steps of obtaining the first updated MCP gap voltage are:

[0086] An initial first MCP gap voltage with minimum spot size information is acquired to obtain a first updated MCP gap voltage.

[0087] Specifically, when the first-level MCP bias parameter is updated, V is fixed. M1 and V M2 V M1-Min-FWHM , V M1-Min-FWHM , for V p1 Scan changes, the scanning range is from the minimum working voltage to the maximum working voltage, the minimum working voltage and the maximum working voltage are set to -200V and +200V. p1 In the process of scanning from negative voltage to positive voltage, different indicator groups (Gain, FWHM, M) are recorded, and the smallest FWHM in the collected indicator group is taken as FWHM min , the corresponding V p1 As the optimal voltage V for the detector MCP gap p1-optimal , and record the FWHM min The corresponding indicator group is (Gain2, FWHM min , M2) go to the next step.

[0088] As one implementation mode, when the spot index group information satisfies the third optimization condition, the specific steps of obtaining the secondary updated MCP bias parameters are:

[0089] The maximum initial secondary MCP bias parameter is obtained when the spot intensity information is less than 0.9 times the maximum spot intensity information, and the secondary updated MCP bias parameter is obtained.

[0090] Specifically, after obtaining the first updated MCP gap voltage, fix V p1 and V M1 V p-optimal and V M1-Min-FWHM In order to obtain a greater gain without significantly increasing the diffuse spot divergence and shifting the centroid position, V M2 From V M1-Min-FWHM to the maximum operating voltage, as V M2 , the gain of the detector will gradually approach saturation, and the V M2 If the collected Gain ≥ Gainmax × 0.9, where Gainmax is the saturation gain that the detector can achieve, stop increasing V M2 , record the V M2 V as the optimization index group (Gain, FWHM, M) M2-optimal .

[0091] In the case of obtaining the first-level updated MCP bias parameter, the first-level updated MCP gap voltage and the second-level updated MCP bias parameter, the output voltage group (V M1 , V p1 , V M2 ) = (V M1-Min-FWHM , V p1-optimal , V M2-optimal ), when the environmental conditions such as working temperature, vacuum degree or optical path change, and the detector ages after long-term use, it is necessary to regularly adjust and update the voltage group (V M1 , V p1 , V M2 ).

[0092] The embodiment of the present application comprehensively considers the linear response characteristics of the microchannel plate and the gain threshold of the saturation effect, as well as the diffuse spot divergence caused by the decrease in spatial resolution, through the optimization adjustment algorithm, and determines the voltage group (V M1 , V p1 , V M2 ).

[0093] Compared with the present application, the prior art has a fixed voltage for the microchannel plates, and a voltage between the microchannel plates is an empirical value and a constant, and cannot be independently and flexibly controlled to maximize the performance of each level of microchannel plates.

[0094] The role of adjusting the gap voltage of the channel plate is that changing the gap voltage will affect the beam spot size of the electrons emitted by MCP1 hitting the input surface of MCP2. Increasing the gap voltage will reduce the beam spot size, increase the number of incident electrons in a single channel, and reduce the gain fluctuation. In particular, by adding a reverse voltage to the gap, the large-angle and low-energy electrons emitted from MCP1 are intercepted by the reverse electric field and absorbed by the output electrode of MCP1, thereby improving the consistency of the incident electrons of MCP2 and improving the position resolution. Adding a reverse voltage between the channel plates may cause a decrease in gain, but the lost gain can be compensated by increasing the operating voltage of the subsequent microchannel plate. In practical applications, corresponding trade-offs need to be made according to specific circumstances. By reducing the voltage of MCP1 and increasing the voltage of MCP2 to make MCP2 close to saturation, the gain consistency of MCP is improved. By adding a reverse voltage to the gap between the two MCPs, low-energy, large-angle emitted electrons are filtered, and the direction and position consistency of the incident electrons of MCP2 are improved, and finally the resolution is improved, and the gain adjustment range and dynamic range are also improved.

[0095] As one implementation manner, the second voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage, an initial second-level MCP bias parameter, an initial second MCP gap voltage and an initial third-level MCP bias parameter.

[0096] Specifically, for a three-stage microchannel plate detector, the total voltage VT = V1 + V M1 +V P1 +V M2 +V P2 +V M3 +V A , where V1 is the acceleration voltage before the electrons are incident on the microchannel plate MCP, V M1 V is the bias voltage applied to the first-stage MCP, which affects the gain of the first-stage MCP. P1 V is the voltage between the first-stage MCP and the second-stage MCP, which affects the center of mass position and diffuse spot size of the electron cloud bunch before entering the second-stage MCP. M2 V is the bias voltage added to the second-stage MCP, which affects the gain of the second-stage MCP. P2 is the voltage between the second-stage MCP and the third-stage MCP, which affects the center of mass position and diffuse spot size of the electron cloud bunch before entering the third-stage MCP. M3 V is the bias voltage applied to the third-stage MCP, which affects the gain of the third-stage MCP. A is the voltage from the microchannel plate to the phosphor screen.

[0097] In the embodiment of the present application, V1 and V A Finally, for the three-stage microchannel plate detector, the input adjustment parameter VM1 、V p1 、V M2 、V p2 、V M3 Output the index group (Gain, FWHM, M) for evaluating the detector performance, where Gain represents the gain generated by the three-stage microchannel plate detector, FWHM represents the diffuse spot size, and M represents the center of mass position of the electron cloud bunch. Based on the principle that the first-stage amplification focuses on position resolution, the second-stage amplification focuses on reducing noise and electron bunch divergence, and the third-stage amplification focuses on gain, by optimizing the parameter V M1 、V p1 、V M2 、V p2 、V M3 Achieve high gain and high resolution. Considering the actual application, V M1 , V P1 The impact on spatial resolution is greater, V M2 and V p2 It has a great influence on the electron bunch divergence and the displacement of the center of mass position. M3 It has a greater impact on the gain, so while ensuring that the gain is not too low, high spatial resolution adjustment should be focused on first, and then high gain adjustment should be focused on.

[0098] As one implementation mode, a second parameter test is performed on the second voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a second voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, the specific steps of obtaining the second optimized voltage parameter corresponding to the spot index group information are as follows:

[0099] When the initial first MCP gap voltage, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameter is obtained;

[0100] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; when the initial first-level MCP bias parameter, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first MCP gap voltage scanning process is obtained; when the spot index group information satisfies the second optimization condition, the first updated MCP gap voltage is obtained;

[0101] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are fixed, the spot index group information in the initial second MCP gap voltage scanning process is obtained; when the spot index group information satisfies the fourth optimization condition, the second updated MCP gap voltage is obtained;

[0102] According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; according to the second-level updated MCP gap voltage, the initial second MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage parameter, the initial second-level MCP bias parameter, and the initial second MCP gap voltage are fixed, the corresponding spot index group information in the initial three-level MCP bias parameter increment process is obtained; when the spot index group information satisfies the third optimization condition, the three-level updated MCP bias parameter is obtained;

[0103] Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, a second-level updated MCP gap voltage, and a third-level updated MCP bias parameter for optimizing the three-level microchannel plate voltage.

[0104] Specifically, the voltage of the three-stage microchannel plate is adjusted independently. First, the initial voltage to be adjusted needs to be calculated according to the proportional parameter, that is, V1:V M1 :V P1 :V M2 :V P2 :V M3 :V A =8:20:1:20:1:20:8, as the initial ratio before adjustment, fix V1, VA =T, T value range is 200V-600V, which is determined according to the actual MCP structural parameters, that is, according to the microchannel diameter, microchannel plate thickness, incision direction, inner surface material, etc.

[0105] After fixing the initial voltage parameters, VM1:Vp1:VM2:Vp2:VM3 = 20:1:20:1:20. At this time, VM1, Vp1, VM2, Vp2, VM3 are 1000V, 50V, 1000V, 50V, 1000V. Fixed V p1 , V M2 , V p2 , V M3 , for V M1Scan changes, the scanning range is from the minimum working voltage to the maximum working voltage, usually the minimum working voltage <200V, the maximum working voltage >1000V, record a series of indicator groups (Gain, FWHM, M) collected under different VM1 conditions, in this series of indicator groups, find the largest Gain and mark it as Gain max , and filter out all the conditions that satisfy Gain>Gain max / 2, and then filter again from the filtered indicator group, and take the V corresponding to the minimum FWHM in the indicator group after the first screening. M1-Min-FWHM , as the V M1 , and record the corresponding Gain and M at the same time. The corresponding indicator group is marked as (Gain1, FWHMmin1, M1).

[0106] In the case of obtaining the first-level update MCP bias parameters, fixed V M1 、V M2 、V p2 、V M3 Update V M1-Min-FWHM 、V M1-Min-FWHM , 50V, V M1-Min-FWHM , scan the Vp1, the scanning range is from the minimum working voltage to the maximum working voltage, usually the minimum working voltage and the maximum working voltage are set to -200V and +200V. p1 In the process of scanning from negative voltage to positive voltage, different indicator groups (Gain, FWHM, M) are recorded, and the smallest FWHM in the collected indicator group is taken as FWHM min2 , the corresponding V p1 As the optimal voltage V between the detectors MCP1 and MCP2 p1-optimal , and record the FWHM min2 The corresponding indicator group is (Gain2, FWHM min2 , M2) go to the next step.

[0107] In the case of obtaining the first updated MCP gap voltage, fixed V M1 、V p1 、V M2 、V M3 V M1-Min-FWHM 、V p1-optimal 、V M1-Min-FWHM 、V M1-Min-FWHM, scan the change of Vp2, the scanning range is from the minimum working voltage to the maximum working voltage, usually the minimum working voltage and the maximum working voltage are set to -200V and +200V. When Vp2 is scanned from negative voltage to positive voltage, different index groups (Gain, FWHM, M) are recorded. In order to ensure position resolution, first filter out the absolute value of the difference between the measured value M and the M2 recorded in the previous step in this scan that is less than 2 times the FWHM min2 Then, the smallest FWHM is selected from the first selected indicator group as the FWHM. min3 , the corresponding V p2 As the optimal voltage V between the detectors MCP2 and MCP3 p2-optimal , and record the FWHM min3 The corresponding indicator group is (Gain3, FWHM min3 , M3) go to the next step.

[0108] As one implementation manner, when the spot index group information satisfies the fourth optimization condition, the specific steps of obtaining the second updated MCP gap voltage are:

[0109] The spot index group information is obtained when the difference between two consecutive measurements of the spot center position information is less than 2 times the spot size information, the initial second MCP gap voltage with the smallest spot size information is obtained, and the second updated MCP gap voltage is obtained.

[0110] Specifically, when obtaining the second updated MCP gap voltage, V is fixed M1 、V p1 、V M2 、V p2 V M1-Min-FWHM 、V p1-optimal 、V M1-Min-FWHM 、V p2-optimal In order to obtain a greater gain without significantly increasing the diffuse spot divergence and shifting the centroid position, V M3 From V M1-Min-FWHM to the maximum operating voltage, as V M3 , the gain of the detector will gradually approach saturation, and the V M3 If the collected Gain ≥ Gainmax×0.9, where Gainmax is the saturation gain that the detector can achieve, stop increasing V M3 , record the V M3 V as the optimization index group (Gain, FWHM, M) M3-optimal .

[0111] After obtaining the updated voltage, the output voltage group (V M1 , Vp1 , V M2 , V p2 , V M3 ) = (V M1-Min-FWHM , V p1-optimal , V M1-Min-FWHM , V p2-optimal , V M3-optimal ), when the environmental conditions, operating temperature, or optical path change, or the detector ages after long-term use, the voltage group (V M1 , V p1 , V M2 , V p2 , V M3 The adjustment algorithm comprehensively considers the linear response characteristics of the microchannel plate, the gain threshold of the saturation effect, and the diffuse spot divergence caused by the decrease in spatial resolution, and determines the voltage group (V M1 , V p1 , V M2 , V p2 , V M3 ).

[0112] The structural parameters of the microchannel plate in the embodiment of the present application also directly affect the final gain and resolution, especially the MCP opening direction, the inner coating material and the thickness of the microchannel plate. In actual use, different bias distributions are modulated according to the specific structural parameters of the microchannel plate. In the embodiment of the present application, by setting the voltage of the three-stage microchannel plate and optimizing the voltage between the microchannel plates, the first-stage amplification focuses on position resolution, the second-stage amplification focuses on reducing noise and electron bunch divergence, and the third-stage amplification focuses on gain. The bias voltage is set high to ensure response consistency through a count rate close to saturation. This independent control supports simple update operations and increases the convenience of accurately controlling the gain and resolution of the detector.

[0113] As the voltage applied to the single-chip microchannel plate increases, the MCP gain increases until space charge is generated in the channel and a saturation effect occurs. 4When the ion feedback effect begins to be obvious, the gain of the single-chip MCP device cannot be increased indefinitely. Electrons bombard the inner wall of the channel to ionize the residual gas. The positive ions generated move toward the channel incident surface, hit the inner wall of the channel to generate electrons, and then hit the input surface of the channel to generate electrons to form "false signals", that is, ion feedback. Ion feedback is an important source of post-pulses and affects the signal-to-noise ratio of the detector. At the same time, the size of the MCP's emitted electron cloud is related to factors such as the acceleration voltage, the distance between the MCP and the phosphor screen, and the working voltage of the MCP. The electron cloud is emitted from the MCP, and its initial size is determined by the channel that generates the multiplication and its distribution. Changing the voltage between the phosphor screen and the MCP will change the electric field and thus adjust the diffusion size of the electron cloud. The electron multiplication and electron beam spot of each level of MCP and the MCP gap are adjusted by the voltage control of the secondary microchannel plate or the tertiary microchannel plate. The life of the MCP is directly related to its gain. Usually, when the gain of the device decays to a certain proportion of its initial gain under continuous operation, its service life is reached. The gain of the device is related to factors such as structural parameters, applied voltage, saturation effect, and ion feedback. Therefore, the parameters related to the loss of device gain are also the key to affecting the life of the device. The gain of MCP working at high output current decays quickly and its life is short. In addition, there are other factors that affect the life of MCP, including working conditions, particle irradiation, MCP structural parameters and material parameters, such as the manufacturing and processing process of MCP. The working life of MCP with good cleanliness is much higher than that of MCP with low cleanliness. The former has a much smaller degree of gain decay than the latter as the working time increases. At the same time, in terms of working conditions, if the gas pressure in the channel is high or the voltage applied at both ends of the device is too high, the number of collisions between electrons and gas molecules increases, resulting in more noise electrons, and the ion feedback phenomenon will also be serious. Flexible control of the voltage of microchannel plates at each level can achieve high resolution and high gain while extending the life and reducing maintenance costs.

[0114] As one implementation mode, it also includes:

[0115] Environmental information, optical path information and usage time information are obtained, and when any one of the environmental information, optical path information and usage time information meets a preset adaptive judgment threshold, the initial voltage parameter is analyzed to obtain a first voltage parameter to be adjusted or a second voltage parameter to be adjusted.

[0116] Specifically, the voltage adaptive adjustment method of the microchannel plate detector in the embodiment of the present application is to start the adaptive adjustment when the environmental conditions, such as the working temperature, vacuum degree, etc., or the optical path changes, and the detector is used for a fixed time; adjust the voltage group (V M1 , V p1 , V M2 ), save the voltage group after adjustment (V M1 , V p1, V M2 ). The technical solution of the embodiment of the present application includes but is not limited to application in a two-stage microchannel plate detector, a three-stage microchannel plate detector and a multi-stage microchannel plate detector.

[0117] The embodiments of the present application can reduce the performance degradation caused by aging of components and changes in the electromagnetic field of the operating environment.

[0118] Reference Figure 2 , a microchannel plate voltage adjustment device is provided for an embodiment of the present application, the device comprising:

[0119] An initial parameter acquisition module is used to acquire initial voltage parameters;

[0120] A first analysis module, used for analyzing the initial voltage parameter to obtain a first voltage parameter to be adjusted;

[0121] A first voltage optimization module is used to perform a first parameter test on a first voltage parameter to be adjusted and obtain a test result when the initial voltage parameter is fixed, obtain spot index group information, perform a first voltage optimization analysis on the spot index group information, and obtain a first optimized voltage parameter corresponding to the spot index group information when the spot index group information meets the optimization condition;

[0122] A second analysis module, used for analyzing the initial voltage parameter to obtain a second voltage parameter to be adjusted;

[0123] The second voltage optimization module is used to perform a second parameter test on the second voltage parameter to be adjusted and obtain the test result when the initial voltage parameter is fixed, obtain the spot index group information, perform a second voltage optimization analysis on the spot index group information, and obtain the second optimized voltage parameter corresponding to the spot index group information when the spot index group information reaches the optimization condition.

[0124] An embodiment of the present application provides a microchannel plate voltage adjustment device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the microchannel plate voltage adjustment method as described above.

[0125] An embodiment of the present application provides a computer-readable storage medium, in which a computer program is stored, wherein the computer program is configured to execute the microchannel plate voltage adjustment method as described above when running.

[0126] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described device and product can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0127] In several embodiments provided in this application, it should be understood that the disclosed methods, systems, devices and program products may be implemented in other ways.

[0128] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0129] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for adjusting a voltage of a microchannel plate, characterized in that: include: Obtaining initial voltage parameters, wherein the initial voltage parameters are the acceleration voltage before the electrons are incident on the microchannel plate MCP and the voltage from the microchannel plate to the phosphor screen end; Analyzing the initial voltage parameter to obtain a first voltage parameter to be adjusted; When the initial voltage parameter is fixed, a first parameter test is performed on the first voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a first voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches an optimization condition, a first optimized voltage parameter corresponding to the spot index group information is obtained; Analyzing the initial voltage parameter to obtain the second voltage parameter to be adjusted; When the initial voltage parameter is fixed, a second parameter test is performed on the second voltage parameter to be adjusted and a test result is obtained to obtain spot index group information, and a second voltage optimization analysis is performed on the spot index group information. When the spot index group information reaches the optimization condition, a second optimized voltage parameter corresponding to the spot index group information is obtained; The light spot index group information includes light spot intensity information, light spot size information and light spot center position information; The first voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage, and an initial second-level MCP bias parameter; The second voltage parameters to be adjusted include an initial first-level MCP bias parameter, an initial first MCP gap voltage, an initial second-level MCP bias parameter, an initial second MCP gap voltage and an initial third-level MCP bias parameter.

2. The microchannel plate voltage adjustment method according to claim 1, characterized in that: The specific steps of analyzing the initial voltage parameters to obtain the first voltage parameter to be adjusted are: First preset voltage ratio information is obtained, and a first voltage parameter to be adjusted is determined according to the initial voltage parameter and the first preset voltage ratio information.

3. The microchannel plate voltage adjustment method according to claim 1, characterized in that: The specific steps of analyzing the initial voltage parameters to obtain the second voltage parameter to be adjusted are: The second preset voltage ratio information is obtained, and the second voltage parameter to be adjusted is determined according to the initial voltage parameter and the second preset voltage ratio information.

4. The microchannel plate voltage adjustment method according to claim 1, characterized in that: The specific steps of performing a first parameter test on the first voltage parameter to be adjusted and obtaining the test result, obtaining the spot index group information, performing a first voltage optimization analysis on the spot index group information, and obtaining the first optimized voltage parameter corresponding to the spot index group information when the spot index group information reaches the optimization condition are as follows: When the initial first MCP gap voltage and the initial second-level MCP bias parameters are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameters are obtained; According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated, and when the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are fixed, the corresponding spot index group information in the initial first MCP gap voltage scanning process is obtained, and when the spot index group information meets the second optimization condition, the first updated MCP gap voltage is obtained; Update the initial first-level MCP bias parameter according to the first-level updated MCP bias parameter, update the initial first MCP gap voltage according to the first updated MCP gap voltage, obtain the corresponding spot index group information in the initial second-level MCP bias parameter increment process when the initial first-level MCP bias parameter and the initial first MCP gap voltage parameter are fixed, and obtain the second-level updated MCP bias parameter when the spot index group information satisfies the third optimization condition; Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, and a second-level updated MCP bias parameter for optimizing the secondary microchannel plate voltage.

5. The microchannel plate voltage adjustment method according to claim 1, characterized in that: The specific steps of performing a second parameter test on the second voltage parameter to be adjusted and obtaining the test result, obtaining the spot index group information, performing a second voltage optimization analysis on the spot index group information, and obtaining the second optimized voltage parameter corresponding to the spot index group information when the spot index group information reaches the optimization condition are as follows: When the initial first MCP gap voltage, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first-level MCP bias parameter scanning process is obtained, and when the spot index group information satisfies the first optimization condition, the first-level updated MCP bias parameter is obtained; According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; when the initial first-level MCP bias parameter, the initial second-level MCP bias parameter, the initial second MCP gap voltage and the initial third-level MCP bias parameter are fixed, the corresponding spot index group information during the initial first MCP gap voltage scanning process is obtained; when the spot index group information satisfies the second optimization condition, the first updated MCP gap voltage is obtained; According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage, the initial second-level MCP bias parameter and the initial third-level MCP bias parameter are fixed, the spot index group information in the initial second MCP gap voltage scanning process is obtained; when the spot index group information satisfies the fourth optimization condition, the second updated MCP gap voltage is obtained; According to the first-level updated MCP bias parameter, the initial first-level MCP bias parameter and the initial second-level MCP bias parameter are updated; according to the first-level updated MCP gap voltage, the initial first MCP gap voltage is updated; according to the second-level updated MCP gap voltage, the initial second MCP gap voltage is updated; when the initial first-level MCP bias parameter, the initial first MCP gap voltage parameter, the initial second-level MCP bias parameter, and the initial second MCP gap voltage are fixed, the corresponding spot index group information in the initial three-level MCP bias parameter increment process is obtained; when the spot index group information satisfies the third optimization condition, the three-level updated MCP bias parameter is obtained; Outputs a first-level updated MCP bias parameter, a first-level updated MCP gap voltage, a second-level updated MCP gap voltage, and a third-level updated MCP bias parameter for optimizing the three-level microchannel plate voltage.

6. The microchannel plate voltage adjustment method according to claim 4, characterized in that: When the spot index group information satisfies the first optimization condition, the specific steps of obtaining the first-level updated MCP bias parameters are: When the spot intensity information is greater than 0.5 times the maximum spot intensity information, an initial first-level MCP bias parameter with the smallest spot size information is obtained to obtain a first-level updated MCP bias parameter.

7. The microchannel plate voltage adjustment method according to claim 4, characterized in that: When the spot index group information satisfies the second optimization condition, the specific steps of obtaining the first updated MCP gap voltage are: An initial first MCP gap voltage with minimum spot size information is acquired to obtain a first updated MCP gap voltage.

8. The method for adjusting the voltage of a microchannel plate according to claim 4, characterized in that: When the spot index group information satisfies the third optimization condition, the specific steps of obtaining the secondary updated MCP bias parameters are as follows: The maximum initial secondary MCP bias parameter is obtained when the spot intensity information is less than 0.9 times the maximum spot intensity information, and the secondary updated MCP bias parameter is obtained.

9. The method for adjusting the voltage of a microchannel plate according to claim 5, characterized in that: When the spot index group information satisfies the fourth optimization condition, the specific steps of obtaining the second updated MCP gap voltage are: The spot index group information is obtained when the difference between two consecutive measurements of the spot center position information is less than 2 times the spot size information, the initial second MCP gap voltage with the smallest spot size information is obtained, and the second updated MCP gap voltage is obtained.

10. The microchannel plate voltage adjustment method according to claim 1, characterized in that: Also includes: Environmental information, optical path information and usage time information are obtained, and when any one of the environmental information, optical path information and usage time information meets a preset adaptive judgment threshold, the initial voltage parameter is analyzed to obtain a first voltage parameter to be adjusted or a second voltage parameter to be adjusted.

11. A microchannel plate voltage adjustment device, characterized in that: include: An initial parameter acquisition module is used to acquire initial voltage parameters, wherein the initial voltage parameters are the acceleration voltage before the electrons are incident on the microchannel plate MCP and the voltage from the microchannel plate to the phosphor screen end; A first analysis module, used for analyzing the initial voltage parameter to obtain a first voltage parameter to be adjusted; A first voltage optimization module is used to perform a first parameter test on a first voltage parameter to be adjusted and obtain a test result when the initial voltage parameter is fixed, obtain spot index group information, perform a first voltage optimization analysis on the spot index group information, and obtain a first optimized voltage parameter corresponding to the spot index group information when the spot index group information meets the optimization condition; A second analysis module, used for analyzing the initial voltage parameter to obtain a second voltage parameter to be adjusted; The second voltage optimization module is used to perform a second parameter test on the second voltage parameter to be adjusted and obtain the test result when the initial voltage parameter is fixed, obtain the spot index group information, perform a second voltage optimization analysis on the spot index group information, and obtain the second optimized voltage parameter corresponding to the spot index group information when the spot index group information reaches the optimization condition; the spot index group information includes spot intensity information, spot size information and spot center position information; the first voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage and an initial second-level MCP bias parameter; the second voltage parameter to be adjusted includes an initial first-level MCP bias parameter, an initial first MCP gap voltage, an initial second-level MCP bias parameter, an initial second MCP gap voltage and an initial third-level MCP bias parameter.

12. A microchannel plate voltage adjustment device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the microchannel plate voltage adjustment method according to any one of claims 1 to 10.

13. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, wherein the computer program is configured to execute the microchannel plate voltage adjustment method according to any one of claims 1 to 10 when running.

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