Display panel and display device

Abstract

The invention discloses a display panel and a display device, the display panel comprises a substrate and a micro light emitting diode, and the micro light emitting diode comprises at least two light emitting units and a connecting structure; the at least two light-emitting units are stacked in the thickness direction of the substrate, and the light-emitting colors of the at least two light-emitting units of the same micro light-emitting diode are the same; the connecting structure is arranged between two adjacent light-emitting units and is electrically connected with the two adjacent light-emitting units; the connecting structure comprises a first transparent conductive layer and a bonding layer which are arranged in a stacked mode, the first transparent conductive layer is electrically connected with one adjacent light-emitting unit, the bonding layer is electrically connected with the other adjacent light-emitting unit, and the bonding layer is electrically connected with the first transparent conductive layer. The power consumption of the display panel can be reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Micro LEDs have the technical advantages of high brightness, high transmittance and high contrast, and have attracted more and more attention in recent years. Micro LEDs use LED chips with a size of less than 50 microns, which have advantages over organic light-emitting diodes (OLEDs) in terms of brightness, transmittance and reliability. In the display panel, thin film transistors (TFTs) are electrically connected to micro LEDs to enable the thin film transistors to drive the micro LEDs.

[0003] However, during the normal display process of the traditional display panel, current will flow through the circuit composed of thin film transistors and micro-LEDs. In this circuit, the thin film transistor has a higher voltage division, while the traditional micro-LED has a lower voltage division. In order to ensure that the traditional micro-LED emits light normally (reaches the preset brightness), the input power of the display panel needs to be increased, resulting in an increase in the power consumption of the display panel.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a display panel and a display device, which can reduce the power consumption of the display panel.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, the present application proposes a display panel, comprising a substrate and a micro light emitting diode disposed on one side of the substrate, wherein the micro light emitting diode comprises:

[0008] At least two light-emitting units are disposed on one side of the substrate, the at least two light-emitting units are stacked along the thickness direction of the substrate, and the light-emitting colors of the at least two light-emitting units of the same micro-LED are the same; and

[0009] A connecting structure, disposed between two adjacent light-emitting units and electrically connecting the two adjacent light-emitting units;

[0010] The connection structure includes a first transparent conductive layer and a bonding layer stacked together, wherein the first transparent conductive layer is electrically connected to an adjacent light-emitting unit, the bonding layer is electrically connected to another adjacent light-emitting unit, and the bonding layer is electrically connected to the first transparent conductive layer.

[0011] In one embodiment of the present application, the connection structure further includes a second transparent conductive layer, which is disposed on a side of the bonding layer away from the first transparent conductive layer, the second transparent conductive layer is electrically connected to the bonding layer, and the second transparent conductive layer is electrically connected to another adjacent light-emitting unit;

[0012] The light-emitting unit comprises a first light-emitting unit and a second light-emitting unit, wherein the first light-emitting unit, the connection structure and the second light-emitting unit are sequentially stacked on the substrate;

[0013] The first light emitting unit includes an N-type semiconductor layer, and the N-type semiconductor layer is in direct contact with the second transparent conductive layer;

[0014] The second light emitting unit includes a P-type semiconductor layer, and the P-type semiconductor layer is in direct contact with the first transparent conductive layer.

[0015] In one embodiment of the present application, the micro light emitting diode further includes a first electrode and a second electrode;

[0016] The first light-emitting unit includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer stacked in sequence, and the second semiconductor layer is an N-type semiconductor layer;

[0017] The second light-emitting unit comprises a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence, and the third semiconductor layer is a P-type semiconductor layer;

[0018] The first electrode is disposed on a side of the first semiconductor layer close to the substrate and is electrically connected to the first semiconductor layer;

[0019] The second electrode is disposed on a side of the fourth semiconductor layer close to the third semiconductor layer and is electrically connected to the fourth semiconductor layer;

[0020] An orthographic projection of the first semiconductor layer on the substrate at least partially overlaps with an orthographic projection of the second semiconductor layer on the substrate.

[0021] In one embodiment of the present application, the orthographic projection of the third semiconductor layer on the substrate is located within the range of the orthographic projection of the first semiconductor layer on the substrate.

[0022] In one embodiment of the present application, an orthographic projection of the first light emitting layer on the substrate at least partially overlaps with an orthographic projection of the first semiconductor layer on the substrate.

[0023] In one embodiment of the present application, the orthographic projection of the second light-emitting layer on the substrate is located within the range of the orthographic projection of the first light-emitting layer on the substrate.

[0024] In one embodiment of the present application, the micro light-emitting diode also includes a third transparent conductive layer, the third transparent conductive layer is arranged on a side of the first semiconductor layer away from the first light-emitting layer, the first electrode is arranged on a side of the third transparent conductive layer away from the first semiconductor layer, and the third transparent conductive layer electrically connects the first electrode and the first semiconductor layer.

[0025] In one embodiment of the present application, the orthographic projection of the first semiconductor layer on the substrate is located within the range of the orthographic projection of the third transparent conductive layer on the substrate.

[0026] In one embodiment of the present application, the micro light emitting diode further includes a first reflective layer, which is disposed on a side of the third transparent conductive layer away from the first semiconductor layer and is disposed on the same layer as the first electrode;

[0027] The area of ​​the orthographic projection of the first electrode on the substrate is smaller than the area of ​​the orthographic projection of the first reflective layer on the substrate.

[0028] In an embodiment of the present application, the connection structure further includes a second reflective layer, and the second reflective layer is located between the first transparent conductive layer and the second transparent conductive layer and is disposed in the same layer as the bonding layer.

[0029] In one embodiment of the present application, a ratio of an area of ​​an orthographic projection of the second reflective layer on the substrate to an area of ​​an orthographic projection of the bonding layer on the substrate is less than or equal to 1.

[0030] In one embodiment of the present application, the display panel further comprises a pixel defining layer, the pixel defining layer is disposed on the substrate, and a plurality of openings are disposed on the pixel defining layer;

[0031] The micro-LED is arranged in the opening, the angle between the sidewall of the opening formed by the pixel defining layer and the substrate is in the range of 30 to 60 degrees, and the reflectivity of the material of the pixel defining layer is greater than 60%.

[0032] In one embodiment of the present application, the micro LED includes a blue micro LED and a green micro LED, and the blue micro LED and the green micro LED are disposed in the opening;

[0033] The display panel further includes a quantum dot conversion material, which is filled in the opening partially provided with the blue light micro-LED and is configured to absorb blue light and excite red light.

[0034] In the second aspect, the present application proposes a display device, including a display panel, the display panel including a substrate and a micro-LED arranged on one side of the substrate, the micro-LED including at least two light-emitting units and a connecting structure; at least two light-emitting units are arranged on one side of the substrate, at least two of the light-emitting units are stacked along the thickness direction of the substrate, and the light-emitting colors of the at least two light-emitting units of the same micro-LED are the same; the connecting structure is arranged between two adjacent light-emitting units and electrically connects the two adjacent light-emitting units; the connecting structure includes a first transparent conductive layer and a bonding layer that are stacked, the first transparent conductive layer is electrically connected to an adjacent light-emitting unit, the bonding layer is electrically connected to another adjacent light-emitting unit, and the bonding layer is electrically connected to the first transparent conductive layer.

[0035] In the present application, the micro-LED of the display panel includes at least two light-emitting units and a connection structure. The light-emitting colors of at least two light-emitting units of the same micro-LED are the same and they are stacked. The connection structure is used to electrically connect two adjacent light-emitting units of the same micro-LED. Compared with the structure in which the traditional micro-LED only includes one light-emitting unit, in the micro-LED of the present application, at least two light-emitting units are stacked. Under the premise of not reducing the resolution of the display panel, the micro-LED can obtain a larger proportion of voltage division in the circuit including the thin-film transistor, and there is no need to increase the input power of the display panel to ensure the normal light emission of the micro-LED, thereby reducing the power consumption of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is a schematic diagram of a micro light emitting diode in the first embodiment of the present application;

[0037] Figure 2 is another schematic diagram of the micro light emitting diode in the first embodiment of the present application;

[0038] Figure 3 is a schematic diagram of a display panel in a first embodiment of the present application;

[0039] Figure 4 is another schematic diagram of the micro light emitting diode in the first embodiment of the present application;

[0040] Figure 5 is a schematic diagram of a conventional micro-LED;

[0041] Figure 6is a schematic diagram of a micro light emitting diode in the second embodiment of the present application. DETAILED DESCRIPTION

[0042] The meanings of the terms used in this specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which this application belongs. The terms used in this specification and claims are only for the purpose of facilitating the description and understanding of this application, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0043] The present application proposes a display device, which may be a mobile phone, a tablet computer, an e-reader, an electronic display screen, a laptop computer, a mobile phone, an augmented reality (AR) or virtual reality (VR) device, a media player, a wearable device, a digital camera, a car navigation system, etc. The display device includes a display panel 1000 .

[0044] The present application proposes a display panel 1000, which may be a micro light emitting diode 100 (Micro Light Emitting Diode, Micro LED) display panel 1000, or a sub-millimeter light emitting diode (Mini Light Emitting Diode, Mini LED) display panel 1000. The embodiments of the present application are described by taking the micro light emitting diode 100 display panel 1000 as an example.

[0045] The display panel 1000 of the present application includes a substrate 200 and a micro light emitting diode 100 disposed on one side of the substrate 200 .

[0046] See also Figure 1 The micro light emitting diode 100 of the present application includes at least two light emitting units 10 and a connecting structure 20 .

[0047] In the same micro LED 100, at least two light emitting units 10 are disposed on one side of the substrate 200, at least two light emitting units 10 are stacked along the thickness direction of the substrate 200, and at least two light emitting units 10 of the same micro LED 100 emit the same light color. The connection structure 20 is disposed between two adjacent light emitting units 10 and electrically connects the two adjacent light emitting units 10.

[0048] The connection structure 20 includes a first transparent conductive layer 21 and a bonding layer 22 which are stacked. The first transparent conductive layer 21 is electrically connected to an adjacent light-emitting unit 10 , the bonding layer 22 is electrically connected to another adjacent light-emitting unit 10 , and the bonding layer 22 is electrically connected to the first transparent conductive layer 21 .

[0049] In the present application, the micro-LED 100 of the display panel 1000 includes at least two light-emitting units 10 and a connection structure 20. The light-emitting colors of at least two light-emitting units 10 of the same micro-LED 100 are the same and are stacked. The connection structure 20 is used to electrically connect two adjacent light-emitting units 10 of the same micro-LED 100. Compared with the structure in which the traditional micro-LED 100 includes only one light-emitting unit 10, in the micro-LED 100 of the present application, at least two light-emitting units 10 are stacked. Under the premise of not reducing the resolution of the display panel 1000, the micro-LED 100 can obtain a larger proportion of voltage division in the circuit including the thin film transistor, and there is no need to increase the input power of the display panel 1000 to ensure the normal light emission of the micro-LED 100, thereby reducing the power consumption of the display panel 1000.

[0050] Optionally, the material of the bonding layer 22 includes at least one of metal and conductive adhesive.

[0051] Optionally, the material of the bonding layer 22 includes at least one of gold, silver, copper, aluminum, titanium, tin, nickel, molybdenum and other conductive metal elements.

[0052] Optionally, the material of the bonding layer 22 includes at least one of anisotropic conductive film (ACF), silver conductive adhesive, gold conductive adhesive, copper conductive adhesive, and carbon conductive adhesive.

[0053] In the present application, the bonding layer 22 serves to conduct electricity between two adjacent light-emitting units 10 .

[0054] Optionally, each light-emitting unit 10 includes a light-emitting layer and an N-type semiconductor layer and a P-type semiconductor layer located on both sides of the light-emitting layer in a thickness direction.

[0055] Optionally, the material of the first transparent conductive layer 21 includes a metal oxide containing indium and / or tin.

[0056] Optionally, the material of the first transparent conductive layer 21 includes transparent conductive oxide (TCO).

[0057] Optionally, the material of the first transparent conductive layer 21 includes an oxide containing a metal element selected from the group consisting of indium, tin, antimony, zinc, and cadmium.

[0058] Optionally, the material of the first transparent conductive layer 21 includes at least one of transparent indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and aluminum-doped zinc oxide (AZO).

[0059] Optionally, the first transparent conductive layer 21 is electrically connected to and directly contacts the P-type semiconductor layer or N-type semiconductor layer of an adjacent light emitting unit 10. The first transparent conductive layer 21 can play a role in current expansion and improve the transmission efficiency of carriers in the P-type semiconductor layer or N-type semiconductor layer.

[0060] It should be noted that, in the light-emitting unit 10, since the second electrode 40 is usually arranged on the side of the N-type semiconductor layer facing the P-type semiconductor layer, and the first electrode 30 is arranged on the side of the P-type semiconductor layer away from the N-type semiconductor layer, the footprint of the N-type semiconductor layer is usually larger than the footprint of the P-type semiconductor layer in the micro-LED 100. The footprint of the N-type semiconductor layer is related to the electron transmission efficiency, and the footprint of the P-type semiconductor layer is related to the hole transmission efficiency. Since the footprints of the N-type semiconductor layer and the P-type semiconductor layer are not equal, the hole transmission efficiency in the micro-LED is lower than the electron transmission efficiency, which makes the recombination of carriers in the light-emitting layer unbalanced, affecting the luminous efficiency of the micro-LED 100. Therefore, when the connection structure 20 only includes the first transparent conductive layer 21 and the bonding layer 22, the first transparent conductive layer 21 is usually arranged on the side of the bonding layer 22 close to the P-type semiconductor layer and directly contacts the P-type semiconductor layer to increase the hole transmission efficiency of the P-type semiconductor layer in two adjacent light-emitting units 10, so that the recombination of electrons and holes in the micro light-emitting diode 100 is more balanced, thereby improving the light extraction efficiency.

[0061] Optionally, the first electrode 30 is a P-pole metal, and the second electrode 40 is an N-pole metal.

[0062] Optional, see Figure 2 The connection structure 20 further includes a second transparent conductive layer 23. The second transparent conductive layer 23 is disposed on a side of the bonding layer 22 away from the first transparent conductive layer 21, and the second transparent conductive layer 23 is electrically connected to the bonding layer 22, and the second transparent conductive layer 23 is electrically connected to another adjacent light emitting unit 10.

[0063] Optionally, the material of the second transparent conductive layer 23 includes transparent conductive oxide.

[0064] Optionally, the material of the second transparent conductive layer 23 includes an oxide containing a metal element selected from the group consisting of indium, tin, antimony, zinc and cadmium.

[0065] Optionally, the material of the second transparent conductive layer 23 includes at least one of transparent indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide.

[0066] Optionally, the second transparent conductive layer 23 is electrically connected to and directly contacts the N-type semiconductor layer or P-type semiconductor layer of another adjacent light emitting unit 10. The second transparent conductive layer 23 can play a role in current expansion and improve the transmission efficiency of carriers in the N-type semiconductor layer or P-type semiconductor layer.

[0067] Optionally, the substrate 200 includes a substrate and a thin film transistor device layer located on one side of the substrate. The thin film transistor device layer includes a plurality of thin film transistors arranged in an array. The micro light emitting diode 100 of the present application is arranged on a side of the thin film transistor device layer away from the substrate, and the micro light emitting diode 100 is electrically connected to the thin film transistor.

[0068] Optional, see Figure 3 The display panel 1000 further includes a pixel defining layer 300. The pixel defining layer 300 is disposed on the substrate 200. A plurality of openings 310 are arranged in an array on a side of the pixel defining layer 300 away from the substrate 200. The micro-LEDs 100 are disposed in the openings 310. The reflectivity of the material of the pixel defining layer 300 is greater than 60%.

[0069] Among them, the reflectivity of the material of the pixel defining layer 300 is a value selected from the group consisting of 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68%, 69%, 70%, 71%, 72%, 73%, 74%, 75%, 76%, 77%, 78%, 79%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, and 98%.

[0070] Since the micro-LED 100 of the present application includes at least two light-emitting units 10 stacked along the thickness direction of the substrate 200, and a connection structure 20 is provided between two adjacent reflective units, at this time, part of the light emitted by the light-emitting unit 10 close to the substrate 200 side will be reflected by the connection structure 20, resulting in a loss of light-emitting efficiency of the micro-LED 100. The present application selects a material with a reflectivity greater than 60% for the pixel defining layer 300, so that the side wall of the opening 310 of the pixel defining layer 300 has a high reflectivity. At this time, after the part of the light-emitting unit 10 close to the substrate 200 side is reflected by the connection structure 20, it is reflected again by the side wall of the opening 310 to the light-emitting direction, thereby improving the brightness of each micro-LED 100, thereby improving the light-emitting efficiency of the display panel 1000. Since the brightness of each micro-LED 100 is improved, the light-emitting efficiency of the display panel 1000 is improved, and the display panel 1000 of the present application does not need to increase the input power of the display panel 1000 to ensure the normal light emission of the micro-LED 100, thereby reducing the power consumption of the display panel 1000.

[0071] Optionally, the material of the pixel defining layer 300 includes a white photoresist material with high reflectivity.

[0072] Optionally, an angle A1 between a sidewall of the opening 310 formed by the pixel defining layer 300 and a plane where the substrate 200 is located is in a range of 30 degrees to 60 degrees.

[0073] The value of the angle A1 between the side wall of the opening 310 and the bottom wall of the opening 310 is one of 30 degrees, 31 degrees, 32 degrees, 33 degrees, 34 degrees, 35 degrees, 36 degrees, 37 degrees, 38 degrees, 39 degrees, 40 degrees, 41 degrees, 42 degrees, 43 degrees, 44 degrees, 45 degrees, 46 degrees, 47 degrees, 48 ​​degrees, 49 degrees, 50 degrees, 51 degrees, 52 degrees, 53 degrees, 54 degrees, 55 degrees, 56 degrees, 57 degrees, 58 degrees, 59 degrees, and 60 degrees.

[0074] Since the side wall of the opening 310 has a high reflectivity for the light emitted by the light-emitting unit 10, the present application can convert the side light emitted by the light-emitting unit 10 close to the side of the substrate 200 into light emitted in the formal direction by setting the angle A1 between the side wall of the opening 310 and the bottom wall of the opening 310 to be in the range of 30 degrees to 60 degrees, thereby improving the brightness of the display panel 1000 in the front viewing direction and improving the light emission efficiency of the display panel 1000. The display panel 1000 of the present application does not need to increase the input power of the display panel 1000 to ensure the normal light emission of the micro-light-emitting diode 100, thereby reducing the power consumption of the display panel 1000.

[0075] Optionally, the ratio of the thickness of the micro LED 100 to the thickness of the pixel defining layer 300 is in the range of 0.8 to 2.0. Preferably, the ratio of the thickness of the micro LED 100 to the thickness of the pixel defining layer 300 is in the range of 1.2 to 1.5.

[0076] Optionally, the micro LED 100 includes a blue micro LED 100 a and a green micro LED 100 b . The blue micro LED 100 a and the green micro LED 100 b are disposed in the opening 310 .

[0077] Optionally, the display panel 1000 further includes a quantum dot conversion material 400. The quantum dot conversion material 400 is filled in the opening 310 partially provided with the blue light micro-LED 100a, and the quantum dot conversion material 400 is configured to absorb blue light and excite red light.

[0078] Optionally, the present application uses an encapsulation layer 500 to encapsulate the display panel 1000 , and the encapsulation layer 500 includes a three-layer stack formed by a first inorganic layer / an organic layer / a second inorganic layer.

[0079] Optionally, the blue light micro LED 100a includes at least two blue light emitting units.

[0080] Optionally, the green micro LED 100b includes at least two green light emitting units.

[0081] It should be noted that in traditional display panels, the luminous efficiency of red micro-LEDs, green micro-LEDs, and blue micro-LEDs varies greatly. Among them, the luminous efficiency of blue micro-LEDs is the highest, followed by that of green micro-LEDs, and that of red micro-LEDs is the lowest. In particular, as the size of micro-LEDs decreases, the luminous efficiency of red micro-LEDs drops sharply.

[0082] In the present application, the micro-LED 100 is one of a blue micro-LED 100a and a green micro-LED 100b. In order to improve the luminous efficiency of the display panel 1000, the present application cancels the red micro-LED 100, and encapsulates part of the blue micro-LED 100a and the quantum dot conversion material 400 in the opening 310. Among them, the quantum dot conversion material 400 is configured to absorb blue light and excite red light. The present application uses a blue micro-LED 100 and a quantum dot conversion material 400 with higher luminous efficiency to replace the red micro-LED 100, thereby improving the brightness of the red light and reducing the power consumption of the display panel 1000.

[0083] Optionally, the quantum dot conversion material 400 includes quantum dot ink, which is used to absorb blue light and excite red light.

[0084] Optionally, in the manufacturing process of the display panel 1000, quantum dot ink is only filled in the openings 310 where the blue light micro-LEDs 100a are partially disposed. After the quantum dot ink is filled, the pixel defining layer 300 is packaged.

[0085] In order to further study the contribution of the micro-LED 100 of the present application to the reduction of power consumption of the display panel 1000, the present application also sets up 3 control groups and 3 experimental groups.

[0086] In control groups 1 to 3, each control group includes a conventional light emitting diode and a thin film transistor. Control group 1 is a conventional red light diode, control group 2 is a conventional green light diode, and control group 3 is a conventional blue light diode. The model and specification of the thin film transistor in each control group are the same.

[0087] A 10V voltage is input to control groups 1 to 3 respectively, wherein the voltage of the conventional red light diode in control group 1 is 2.1V, the voltage of the conventional green light diode in control group 2 is 2.5V, and the voltage of the conventional blue light diode in control group 3 is 2.9V. Based on the voltage division evaluation, the power consumption of the conventional RBG chip in the entire display panel 1000 accounts for 20% to 30%.

[0088] In experimental groups 1 to 3, each experimental group includes a micro-LED 100 of the present application and a thin film transistor. Among them, experimental group 1 is a blue light micro-LED 100a and a quantum dot conversion material 400 covering the blue light micro-LED 100a, control group 2 is a green light micro-LED 100b, and control group 3 is a blue light micro-LED 100a. The model and specification of the thin film transistor in each control group are the same.

[0089] A voltage of 10V was input to each of the experimental groups 1 to 3, wherein the voltage of the blue micro-LED 100a in the experimental group 1 was 4V, the voltage of the green micro-LED 100b in the experimental group 2 was 4.5V, and the voltage of the blue micro-LED 100a in the experimental group 3 was 5V. Based on the voltage division evaluation, the power consumption of the micro-LED 100 of the present application in the entire display panel 1000 accounts for 40% to 50%.

[0090] Since the power consumption ratio of the micro light emitting diode 100 in the display panel 1000 is increased, the power consumption of the display panel 1000 can be reduced under the premise of the same brightness.

[0091] On the other hand, based on the same chip manufacturing process, taking the monochrome green light chip as an example, the power consumption of the panel using conventional chips and the micro-light-emitting diode 100 chip of the present application under the same brightness conditions was verified through simulation. The simulation results show that based on the same circuit design (taking the 7T circuit as an example), the power consumption can be saved by 40% to 50% under the constant current driving condition.

[0092] In the first embodiment of the present application, each micro light emitting diode 100 includes two light emitting units 10 .

[0093] In the present application, since each micro-LED 100 includes two stacked light-emitting units 10, compared with a conventional micro-LED 100 that only includes one light-emitting unit 10, the present application can achieve higher brightness display at the same current without reducing the resolution of the display panel 1000, while reducing the power consumption of the thin-film transistor in the circuit, thereby reducing the overall power consumption of the display panel 1000, improving the voltage drop (IR drop), and improving the display uniformity.

[0094] Optional, see Figure 4 The light emitting unit 10 includes a first light emitting unit 11 and a second light emitting unit 12. The first light emitting unit 11, the connection structure 20 and the second light emitting unit 12 are sequentially stacked on the substrate 200.

[0095] Optionally, the first light-emitting unit 11 includes an N-type semiconductor layer, and the second light-emitting unit 12 includes a P-type semiconductor layer. When the connection structure 20 includes only the first transparent conductive layer 21 and the bonding layer 22, the first transparent conductive layer 21 is in direct contact with the P-type semiconductor layer of the second light-emitting unit 12, thereby improving the hole transmission efficiency of the P-type semiconductor layer in the second light-emitting unit 12. When the connection structure 20 includes only the first transparent conductive layer 21, the bonding layer 22 and the second transparent conductive layer 23, the first transparent conductive layer 21 is in direct contact with the P-type semiconductor layer of the second light-emitting unit 12, and the second transparent conductive layer 23 is in direct contact with the N-type semiconductor layer of the first light-emitting unit 11, thereby improving the hole transmission efficiency of the P-type semiconductor layer in the second light-emitting unit 12 while improving the electron transmission efficiency of the N-type semiconductor layer in the first light-emitting unit 11.

[0096] Optionally, the first light emitting unit 11 includes a first semiconductor layer 11a, a first light emitting layer 11b and a second semiconductor layer 11c stacked in sequence. The second light emitting unit 12 includes a third semiconductor layer 12a, a second light emitting layer 12b and a fourth semiconductor layer 12c stacked in sequence.

[0097] In this embodiment, in the same micro LED 100 , the first light emitting unit 11 and the second light emitting unit 12 emit the same light color.

[0098] Optionally, in the first light-emitting unit 11, the first semiconductor layer 11a is a P-type doped semiconductor layer, and the material of the first semiconductor layer 11a includes p-type gallium nitride (GaN). The second semiconductor layer 11c is an N-type doped semiconductor layer, and the material of the second semiconductor layer 11c includes n-type gallium nitride (GaN). The second semiconductor layer 11c is in direct contact with the second transparent conductive layer 23 to improve the electron transmission efficiency of the second semiconductor layer 11c. The first light-emitting layer 11b is a quantum well layer, and optionally, the first light-emitting layer 11b is a multi-layer quantum well (MQW) structure formed using InGaN / GaN.

[0099] Optionally, in the second light-emitting unit 12, the third semiconductor layer 12a is a P-type doped semiconductor layer, the material of the third semiconductor layer 12a includes p-type gallium nitride (GaN), and the third semiconductor layer 12a is in direct contact with the first transparent conductive layer 21 to improve the hole transport efficiency of the third semiconductor layer 12a. The fourth semiconductor layer 12c is an N-type doped semiconductor layer, and the material of the fourth semiconductor layer 12c includes n-type gallium nitride (GaN). The second light-emitting layer 12b is a quantum well layer, and optionally, the second light-emitting layer 12b is a multi-layer quantum well (MQW) structure formed using InGaN / GaN.

[0100] Optionally, the micro-LED 100 further includes a first electrode 30 and a second electrode 40. The first electrode 30 is disposed on a side of the first semiconductor layer 11a close to the substrate 200 and is electrically connected to the first semiconductor layer 11a. The second electrode 40 is disposed on a side of the fourth semiconductor layer 12c close to the third semiconductor layer 12a and is electrically connected to the fourth semiconductor layer 12c.

[0101] The first electrode 30 and the second electrode 40 respectively serve as the input terminal and the output terminal of the micro-LED 100. Since the second semiconductor layer 11c and the third semiconductor layer 12a are directly bonded using the bonding layer 22, the light-emitting efficiency of the micro-LED 100 is low, which is caused by the low hole transport efficiency of the third semiconductor layer 12a.

[0102] Therefore, in this embodiment, a first transparent conductive layer 21 is provided between the bonding layer 22 and the third semiconductor layer 12a. The first transparent conductive layer 21 is in direct contact with the third semiconductor layer 12a, and the first transparent conductive layer 21 can play a role in current expansion, thereby improving the hole transmission efficiency of the third semiconductor layer 12a, so that when the second light-emitting unit 12 emits light, the recombination of holes and electrons in the second light-emitting layer 12b is more balanced, thereby improving the luminous efficiency of each micro light-emitting diode 100.

[0103] On the other hand, a second transparent conductive layer 23 is further provided between the bonding layer 22 and the second semiconductor layer 11c. The second transparent conductive layer 23 is in direct contact with the second semiconductor layer 11c, and the second transparent conductive layer 23 can play a role in current expansion, thereby improving the electron transmission efficiency of the second semiconductor layer 11c, and further improving the luminous efficiency of each micro-LED 100.

[0104] Optionally, the thickness of the first transparent conductive layer 21 is greater than the thickness of the second transparent conductive layer 23. In the micro-LED 100, the carrier (hole) transmission efficiency of the P-type semiconductor layer is less than the carrier (electron) transmission efficiency of the N-type semiconductor layer, and the thickness of the transparent conductive layer is positively correlated with the carrier transmission efficiency. Therefore, reducing the thickness of the first transparent conductive layer 21 and increasing the thickness of the second transparent conductive layer 23 can make the recombination of holes and electrons in the micro-LED 100 more balanced, thereby improving the luminous efficiency of each micro-LED 100.

[0105] Optionally, the orthographic projection of the first semiconductor layer 11 a on the substrate 200 at least partially overlaps with the orthographic projection of the second semiconductor layer 11 c on the substrate 200 .

[0106] See also Figure 5, the conventional micro-LED only includes one light-emitting unit, and the conventional light-emitting unit includes a P-type semiconductor layer C1, a quantum well layer C2, and an N-type semiconductor layer C3 stacked on a substrate. The conventional micro-LED also includes a first electrode 30a and a second electrode 40a, wherein the first electrode 30a is disposed on a side of the P-type semiconductor layer C1 away from the quantum well layer C2, and the second electrode 40a is disposed on a side of the N-type semiconductor layer C3 close to the quantum well layer C2. Therefore, in the conventional light-emitting unit, the area of ​​the P-type semiconductor layer C1 is smaller than the area of ​​the N-type semiconductor layer C3, because the N-type semiconductor layer C3 needs to be additionally provided with a portion of length to provide the second electrode 40a on the side of the N-type semiconductor layer C3 close to the quantum well layer. Since the area of ​​the P-type semiconductor layer C1 is smaller than the area of ​​the N-type semiconductor layer C3, the efficiency of generating holes in the P-type semiconductor layer C1 is lower than the efficiency of generating electrons in the N-type semiconductor layer C3, so that when the light-emitting unit emits light, the recombination of electrons and holes in the quantum well layer C2 is unbalanced, resulting in a reduction in the light-emitting efficiency of the conventional light-emitting unit.

[0107] See also Figure 4 In this embodiment, since the second electrode 40 is disposed on the second light-emitting unit 12, and the first electrode 30 is disposed on the side of the first semiconductor layer 11a close to the substrate 200. Therefore, there is no need to set an additional length for the second light-emitting unit 12, without reducing the resolution of the display panel 1000. In this embodiment, the area of ​​the first semiconductor layer 11a is set to be equal to the area of ​​the second semiconductor layer 11c, that is, the orthographic projection of the side of the first semiconductor layer 11a on the substrate 200 overlaps with the orthographic projection of the side of the second semiconductor layer 11c on the substrate 200. In this case, the area of ​​the first semiconductor layer 11a is increased, thereby improving the transmission efficiency of holes in the first semiconductor layer 11a. When the first light-emitting unit 11 emits light, the recombination of electrons and holes in the first light-emitting layer 11b is more balanced, thereby improving the luminous efficiency of the micro light-emitting diode 100.

[0108] Optionally, the orthographic projection of the third semiconductor layer 12a on the substrate 200 is within the range of the orthographic projection of the first semiconductor layer 11a on the substrate 200. The orthographic projection of the fourth semiconductor layer 12c on the substrate 200 at least partially overlaps with the orthographic projection of the second semiconductor layer 11c on the substrate 200.

[0109] Since the second electrode 40 is disposed on the side of the fourth semiconductor layer 12c close to the second light-emitting layer 12b, the area of ​​the third semiconductor layer 12a needs to be set smaller than the area of ​​the fourth semiconductor layer 12c to form a clearance opening on the side of the second light-emitting unit 12 for installing the second electrode 40. At this time, although the area of ​​the third semiconductor layer 12a is smaller than the area of ​​the fourth semiconductor layer 12c, the first transparent conductive layer 21 is further disposed on the side of the third semiconductor layer 12a away from the second light-emitting layer 12b, and the first transparent conductive layer 21 can improve the hole transport efficiency of the third semiconductor layer 12a, so the light-emitting efficiency of the second light-emitting unit 12 will not be reduced, so that the overall light-emitting efficiency of the micro light-emitting diode 100 is improved.

[0110] Optionally, the orthographic projection of the first light emitting layer 11 b on the substrate 200 at least partially overlaps with the orthographic projection of the first semiconductor layer 11 a on the substrate 200 .

[0111] In the conventional micro-LED 100, in order to facilitate the setting of the second electrode 40 on the side of the N-type semiconductor layer close to the quantum well layer, an additional length is set at the edge of the N-type semiconductor layer. At this time, the area of ​​the quantum well layer is usually smaller than the area of ​​the N-type semiconductor layer, so that the light-emitting area of ​​the light-emitting unit 10 is relatively small, resulting in a low light-emitting efficiency of the conventional micro-LED 100.

[0112] In the present application, since there is no need to set the second electrode 40 in the first light-emitting unit 11, the area of ​​the first light-emitting layer 11b can be set equal to the area of ​​the first semiconductor layer 11a and the area of ​​the second semiconductor layer 11c, thereby increasing the light-emitting area of ​​the first light-emitting unit 11. In the same micro-LED 100, since the first light-emitting unit 11 is relatively far from the light-emitting side and the second light-emitting unit 12 is relatively close to the light-emitting side, at this time, the first light-emitting unit 11 has a larger light-emitting area than the second light-emitting unit 12, which can improve the overall light-emitting efficiency of the micro-LED 100.

[0113] Optionally, the orthographic projection of the second light-emitting layer 12 b on the substrate 200 is located within the range of the orthographic projection of the first light-emitting layer 11 b on the substrate 200 .

[0114] In this embodiment, although the first light-emitting unit 11 has a larger light-emitting area and higher brightness than the second light-emitting unit 12, the first light-emitting unit 11 is farther away from the light-emitting side. Therefore, the first light-emitting unit 11 can play a better uniforming role in the light-emitting process, thereby avoiding the phenomenon of bright spots, dark spots, and bright and dark stripes (Mura) appearing on the display panel 1000 during display.

[0115] Optionally, the micro-LED 100 further includes a third transparent conductive layer 50. The third transparent conductive layer 50 is disposed on a side of the first semiconductor layer 11a away from the first light-emitting layer 11b, the first electrode 30 is disposed on a side of the third transparent conductive layer 50 away from the first semiconductor layer 11a, and the third transparent conductive layer 50 electrically connects the first electrode 30 and the first semiconductor layer 11a.

[0116] In this embodiment, since the second semiconductor layer 11c is provided with a second transparent conductive layer 23 on the side away from the first light-emitting layer 11b, the second transparent conductive layer 23 plays a role of current expansion for the second semiconductor layer 11c, so that the carrier (electron) mobility in the second semiconductor layer 11c is inconsistent with the carrier (hole) mobility in the first semiconductor layer 11a. Based on this, in this embodiment, a third semiconductor layer 12a is provided on the side of the first semiconductor layer 11a away from the first light-emitting layer 11b, and the third semiconductor layer 12a plays a role of current expansion for the first semiconductor layer 11a, so that the difference between the carrier mobility in the first semiconductor layer 11a and the carrier mobility in the second semiconductor layer 11c is reduced. When the first light-emitting unit 11 emits light, the recombination of holes and electrons in the first light-emitting layer 11b is more balanced, thereby improving the luminous efficiency of the micro-light-emitting diode 100 and reducing the power consumption of the display panel 1000.

[0117] Optionally, the orthographic projection of the first semiconductor layer 11a on the substrate 200 is within the range of the orthographic projection of the third transparent conductive layer 50 on the substrate 200. The difference between the carrier mobility of the first semiconductor layer 11a and the carrier mobility of the second semiconductor layer 11c can be further reduced, and when the first light-emitting unit 11 emits light, the recombination of holes and electrons in the first light-emitting layer 11b is more balanced, thereby improving the light-emitting efficiency of the micro light-emitting diode 100 and reducing the power consumption of the display panel 1000.

[0118] Optionally, the material of the third transparent conductive layer 50 includes transparent conductive oxide.

[0119] Optionally, the material of the third transparent conductive layer 50 includes an oxide containing a metal element selected from the group consisting of indium, tin, antimony, zinc, and cadmium.

[0120] Optionally, the material of the third transparent conductive layer 50 includes at least one of transparent indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide.

[0121] Optionally, the micro light emitting diode 100 further includes a first reflective layer 60 , which is disposed on a side of the third transparent conductive layer 50 away from the first semiconductor layer 11 a and is disposed in the same layer as the first electrode 30 .

[0122] In this embodiment, the first reflective layer 60 is a distributed Bragg reflective film layer. The first reflective layer 60 is formed by periodically stacking multiple transparent insulating film layers with different refractive indices. The material of the first reflective layer 60 includes at least one of silicon nitride, silicon oxide or silicon oxynitride. In one embodiment, the first reflective layer 60 is a stacked structure formed by alternating silicon oxide layers and silicon nitride layers.

[0123] The first reflective layer 60 is used to reflect the light emitted by the first light emitting unit 11 close to the side of the substrate 200 toward the substrate 200, and increase the amount of reflection through optical interference, thereby improving the light extraction efficiency of the micro-LED 100 and reducing the power consumption of the display panel 1000. On the other hand, the light reflected by the first light emitting unit 11 by the bonding layer 22 can also be emitted to the light extraction side after being reflected by the first reflective layer 60 and the side wall of the opening 310, thereby improving the light extraction efficiency of the micro-LED 100.

[0124] Optionally, an area of ​​an orthographic projection of the first electrode 30 on the substrate 200 is smaller than an area of ​​an orthographic projection of the first reflective layer 60 on the substrate 200 .

[0125] Optionally, the ratio of the area of ​​the orthographic projection of the first reflective layer 60 on the substrate 200 to the area of ​​the orthographic projection of the first electrode 30 on the substrate 200 is in the range of 4 to 20. Preferably, the ratio of the area of ​​the orthographic projection of the first reflective layer 60 on the substrate 200 to the area of ​​the orthographic projection of the first electrode 30 on the substrate 200 is in the range of 8 to 12.

[0126] Since the micro-LED 100 in this embodiment is provided with the third transparent conductive layer 50, the first electrode 30 and the first reflective layer 60 are both provided on one side of the third transparent conductive layer 50, and the third transparent conductive layer 50 plays a role in current expansion. Therefore, the size of the first electrode 30 can be reduced, and the size of the first reflective layer 60 can be increased, thereby improving the light extraction efficiency of the micro-LED 100 and reducing the power consumption of the display panel 1000 without affecting the normal light emission of the micro-LED 100.

[0127] Optionally, the connection structure 20 further includes a second reflective layer 70 . The second reflective layer 70 is located between the first transparent conductive layer 21 and the second transparent conductive layer 23 and is disposed in the same layer as the bonding layer 22 .

[0128] When the material of the bonding layer 22 is a conductive adhesive, the reflectivity of the conductive adhesive is low. When the second light-emitting unit 12 emits light, the second reflective layer 70 is used to reflect the light emitted by the second light-emitting unit 12 away from the side of the substrate 200 to the substrate 200, and increase the reflection amount through optical interference, thereby improving the light extraction efficiency of the micro-LED 100 and reducing the power consumption of the display panel 1000. On the other hand, the light reflected by the first light-emitting unit 11 by the second reflective layer 70 can also be emitted to the light extraction side after being reflected by the first reflective layer 60 and the side wall of the opening 310, thereby improving the light extraction efficiency of the micro-LED 100.

[0129] Optionally, a ratio of an area of ​​an orthographic projection of the second reflective layer 70 on the substrate 200 to an area of ​​an orthographic projection of the bonding layer 22 on the substrate 200 is greater than 1.

[0130] In this embodiment, the area of ​​the second reflective layer 70 is relatively large, which can improve the light extraction efficiency of the second light emitting unit 12 .

[0131] Optionally, a ratio of an area of ​​an orthographic projection of the second reflective layer 70 on the substrate 200 to an area of ​​an orthographic projection of the bonding layer 22 on the substrate 200 is less than or equal to 1.

[0132] In this embodiment, the second reflective layer 70 is arranged in the same layer as the bonding layer 22, and the area proportion of the second reflective layer 70 in the layer is 0 to 50%, and the area proportion of the bonding layer 22 in the layer is 50% to 100%. Although the second reflective layer 70 can improve the light extraction efficiency of the second light-emitting unit 12, it is still necessary to ensure that the first light-emitting unit 11 and the second light-emitting unit 12 inside the micro-LED 100 can be normally turned on. When the proportion of the bonding layer 22 in the layer is too small, the internal impedance of the micro-LED 100 will be large. Although the voltage division of the micro-LED 100 in the circuit can be increased, most of the voltage divided by the micro-LED 100 is contributed to heat generation, and not to light emission. Therefore, the area proportion of the bonding layer 22 needs to be greater than the area proportion of the second reflective layer 70. On the premise of satisfying the conduction performance of the bonding layer 22, the area proportion of the second reflective layer 70 can be increased, thereby improving the light extraction efficiency of the first light-emitting unit 11, thereby reducing the power consumption of the display panel 1000.

[0133] In the second embodiment of the present application, parts different from those of the first embodiment of the present application will be described to avoid redundancy.

[0134] See also Figure 6The difference between the implementation of the second embodiment of the present application and the implementation of the first embodiment of the present application is that each micro-LED 100 includes three light-emitting units 10. The light-emitting unit 10 includes a first light-emitting unit 11, a second light-emitting unit 12, and a third light-emitting unit 13. The first light-emitting unit 11, the connection structure 20, the second light-emitting unit 12, the connection structure 20, and the third light-emitting unit 13 are sequentially stacked on the substrate 200. The first light-emitting unit 11 includes a first semiconductor layer 11a, a first light-emitting layer 11b, and a second semiconductor layer 11c stacked in sequence. The second light-emitting unit 12 includes a third semiconductor layer 12a, a second light-emitting layer 12b, and a fourth semiconductor layer 12c stacked in sequence. The third light-emitting unit 13 includes a fifth semiconductor layer 13a, a third light-emitting layer 13b, and a sixth semiconductor layer 13c stacked in sequence. The orthographic projection of the side surface of the first semiconductor layer 11a on the substrate 200, the orthographic projection of the side surface of the second semiconductor layer 11c on the substrate 200, the orthographic projection of the third semiconductor layer 12a on the substrate 200, and the orthographic projection of the fourth semiconductor layer 12c on the substrate 200 overlap. The orthographic projection of at least part of the side surface of the first semiconductor layer 11a on the substrate 200 is located outside the orthographic projection of the fifth semiconductor layer 13a on the substrate 200. The micro light-emitting diode 100 also includes a first electrode 30 and a second electrode 40. The first electrode 30 is disposed on a side of the first semiconductor layer 11a away from the second semiconductor layer 11c, and is electrically connected to the first semiconductor layer 11a. The second electrode 40 is disposed on a side of the sixth semiconductor layer 13c close to the fifth semiconductor layer 13a, and is electrically connected to the sixth semiconductor layer 13c.

[0135] Compared with the first embodiment of the present application, the micro-light emitting diode 100 of the second embodiment of the present application includes three light emitting units 10 stacked in sequence. Without reducing the resolution of the display panel 1000, the micro-light emitting diode 100 can obtain a larger proportion of voltage division in the circuit including the thin film transistor. There is no need to increase the input power of the display panel 1000 to ensure the normal light emission of the micro-light emitting diode 100, thereby reducing the power consumption of the display panel 1000.

[0136] The above is a detailed description of the specific implementation of the present application. The above implementation disclosed in the present application is only the preferred implementation of the present application. For ordinary technicians in this field, many modifications and improvements can be made without departing from the concept of the present application. These modifications and improvements all fall within the scope of protection defined by the claims of the present application.

Claims

1. A display panel comprising a substrate and a micro light emitting diode arranged on one side of the substrate, characterized in that: The micro light emitting diode comprises: At least two light-emitting units are disposed on one side of the substrate, the at least two light-emitting units are stacked along the thickness direction of the substrate, and the light-emitting colors of the at least two light-emitting units of the same micro-LED are the same; and A connecting structure, disposed between two adjacent light-emitting units and electrically connecting the two adjacent light-emitting units; The connection structure includes a first transparent conductive layer and a bonding layer which are stacked, wherein the first transparent conductive layer is electrically connected to an adjacent light emitting unit, the bonding layer is electrically connected to another adjacent light emitting unit, and the bonding layer is electrically connected to the first transparent conductive layer.

2. The display panel according to claim 1, wherein: The connection structure further includes a second transparent conductive layer, which is disposed on a side of the bonding layer away from the first transparent conductive layer, the second transparent conductive layer is electrically connected to the bonding layer, and the second transparent conductive layer is electrically connected to another adjacent light-emitting unit; The light-emitting unit comprises a first light-emitting unit and a second light-emitting unit, wherein the first light-emitting unit, the connection structure and the second light-emitting unit are sequentially stacked on the substrate; The first light emitting unit includes an N-type semiconductor layer, and the N-type semiconductor layer is in direct contact with the second transparent conductive layer; The second light emitting unit includes a P-type semiconductor layer, and the P-type semiconductor layer is in direct contact with the first transparent conductive layer.

3. The display panel according to claim 2, wherein: The micro light emitting diode further includes a first electrode and a second electrode; The first light-emitting unit includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer stacked in sequence, and the second semiconductor layer is an N-type semiconductor layer; The second light-emitting unit comprises a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer stacked in sequence, and the third semiconductor layer is a P-type semiconductor layer; The first electrode is disposed on a side of the first semiconductor layer close to the substrate and is electrically connected to the first semiconductor layer; The second electrode is disposed on a side of the fourth semiconductor layer close to the third semiconductor layer and is electrically connected to the fourth semiconductor layer; An orthographic projection of the first semiconductor layer on the substrate at least partially overlaps with an orthographic projection of the second semiconductor layer on the substrate.

4. The display panel according to claim 3, wherein: The orthographic projection of the third semiconductor layer on the substrate is located within the range of the orthographic projection of the first semiconductor layer on the substrate.

5. The display panel according to claim 3, wherein: An orthographic projection of the first light emitting layer on the substrate at least partially overlaps with an orthographic projection of the first semiconductor layer on the substrate.

6. The display panel according to claim 3, wherein: The orthographic projection of the second light-emitting layer on the substrate is located within the range of the orthographic projection of the first light-emitting layer on the substrate.

7. The display panel according to claim 3, wherein: The micro-light-emitting diode also includes a third transparent conductive layer, which is arranged on a side of the first semiconductor layer away from the first light-emitting layer, and the first electrode is arranged on a side of the third transparent conductive layer away from the first semiconductor layer, and the third transparent conductive layer electrically connects the first electrode and the first semiconductor layer.

8. The display panel according to claim 7, wherein: The orthographic projection of the first semiconductor layer on the substrate is located within the range of the orthographic projection of the third transparent conductive layer on the substrate.

9. The display panel according to claim 7, wherein: The micro light emitting diode further includes a first reflective layer, which is disposed on a side of the third transparent conductive layer away from the first semiconductor layer and is disposed on the same layer as the first electrode; The area of ​​the orthographic projection of the first electrode on the substrate is smaller than the area of ​​the orthographic projection of the first reflective layer on the substrate.

10. The display panel according to claim 3, wherein: The connection structure further includes a second reflective layer, which is located between the first transparent conductive layer and the second transparent conductive layer and is disposed in the same layer as the bonding layer.

11. The display panel according to claim 10, wherein: A ratio of an area of ​​an orthographic projection of the second reflective layer on the substrate to an area of ​​an orthographic projection of the bonding layer on the substrate is less than or equal to 1.

12. The display panel according to any one of claims 1 to 11, characterized in that: The display panel further comprises a pixel defining layer, wherein the pixel defining layer is disposed on the substrate and a plurality of openings are disposed on the pixel defining layer; The micro-LED is arranged in the opening, the angle between the sidewall of the opening formed by the pixel defining layer and the substrate is in the range of 30 to 60 degrees, and the reflectivity of the material of the pixel defining layer is greater than 60%.

13. The display panel according to claim 12, wherein: The micro LEDs include a blue micro LED and a green micro LED, and the blue micro LED and the green micro LED are arranged in the opening; The display panel further includes a quantum dot conversion material, which is filled in the opening partially provided with the blue light micro-LED and is configured to absorb blue light and excite red light.

14. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 13.

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