Display device with groove in blocking area

Abstract

A display device having a groove in a barrier area includes a substrate including a display area and a non-display area adjacent to the display area. The non-display area includes a blocking area. The organic layer is disposed on the substrate. The emission layer is disposed in the display area of the substrate. The auxiliary pattern is disposed in a blocking region of the non-display area of the substrate. The thin film encapsulation layer is disposed on the substrate and overlaps the emission layer and the blocking region. The organic layer has a recess penetrating an entire thickness of the organic layer in the barrier region. The auxiliary pattern overlaps the groove. The auxiliary pattern includes the same material as a gate electrode disposed in the display area of the substrate.

Description

[0001] This application is a divisional application of an application with an application date of January 23, 2019, application number 201910062651.6, and invention name “Display device with a groove in the blocking area”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the priority benefit of Korean Patent Application No. 10-2018-0009305 filed on January 25, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0004] Exemplary embodiments of the present invention relate to a display device, and more particularly, to a display device having a groove in a blocking region. Background Art

[0005] The display device may be infiltrated with moisture or oxygen, and when moisture or oxygen flows in from the outside, the emission layer may be damaged or the signal line may be oxidized. The display area may be encapsulated, which can reduce the infiltration of moisture or oxygen and extend the life of the display device.

[0006] When the display area is encapsulated by the encapsulation layer, moisture or oxygen may flow into the display device through an organic layer included in the display device. Summary of the invention

[0007] Exemplary embodiments of the present invention provide a display device that blocks moisture or oxygen from flowing into a display area surrounded by an encapsulation layer.

[0008] A display device according to an exemplary embodiment of the present invention includes a substrate including a display area and a non-display area adjacent to the display area. The non-display area includes a blocking area. An organic layer is disposed on the substrate. An emission layer is disposed in the display area of ​​the substrate. An auxiliary pattern is disposed in the blocking area of ​​the non-display area of ​​the substrate. A thin film encapsulation layer is disposed on the substrate and overlaps the emission layer and the blocking area. The organic layer has a groove that penetrates the entire thickness of the organic layer in the blocking area. The auxiliary pattern overlaps the groove. The auxiliary pattern includes the same material as a gate electrode disposed in the display area of ​​the substrate.

[0009] The encapsulation layer may include a first inorganic encapsulation layer and a second inorganic encapsulation layer. The organic encapsulation layer may be disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer. The organic encapsulation layer may substantially cover a portion of the display area and the non-display area. The blocking area may overlap with the organic encapsulation layer.

[0010] The display device may include a semiconductor layer disposed on a substrate. A first gate insulating layer may be disposed on the semiconductor layer. A gate electrode may be disposed on the first gate insulating layer. A second gate insulating layer may be disposed on the gate electrode. A storage electrode may be disposed on the second gate insulating layer. The first insulating layer may be disposed on the storage electrode. An input electrode and an output electrode may be disposed on the first insulating layer and may be connected to the semiconductor layer. The second insulating layer may be disposed on the input electrode and the output electrode. A data line and a driving voltage line may be disposed on the second insulating layer. The organic layer may include a first interlayer insulating layer disposed on the second insulating layer and a second interlayer insulating layer disposed on the first interlayer insulating layer.

[0011] The auxiliary pattern may include the same material as the gate electrode.

[0012] The auxiliary pattern may include a first layer and a second layer overlapping each other, and a second gate insulating layer is disposed between the first layer and the second layer. The first layer may include the same material as the gate electrode. The second layer may include the same material as the storage electrode.

[0013] The auxiliary pattern may be disposed on the first insulating layer. The auxiliary pattern may include the same material as the input electrode and the output electrode.

[0014] The auxiliary pattern may include a first layer and a second layer overlapping each other, and a second insulating layer is disposed between the first layer and the second layer. The first layer may include the same material as the input electrode and the output electrode. The second layer may include the same material as the data line and the driving voltage line.

[0015] The auxiliary pattern may include the same material as the data line and the driving voltage line.

[0016] The display device may include a common voltage transmission line disposed in the non-display area, and the blocking area may be disposed between the display area and the common voltage transmission line.

[0017] The display device may include a first spacer and a second spacer disposed in the non-display area. The first spacer may overlap the common voltage transmission line. The second spacer may be separated from the display area further than the first spacer.

[0018] A display device according to an exemplary embodiment of the present invention includes a substrate, the substrate including a display area and a non-display area adjacent to the display area. The non-display area includes a blocking area. An organic layer is disposed on the substrate. An emission layer is disposed in the display area of ​​the substrate. A thin film encapsulation layer is disposed on the substrate and overlaps the emission layer and the blocking area. A first thickness of the organic layer disposed on the display area is greater than a second thickness of the organic layer disposed in the blocking area. The organic layer has a groove that penetrates the entire thickness of the organic layer in the blocking area.

[0019] The display device may include an auxiliary pattern disposed in the blocking area of ​​the non-display area. The auxiliary pattern may overlap the groove. The auxiliary pattern may include the same material as the electrode layer disposed in the display area of ​​the substrate.

[0020] A display device according to an exemplary embodiment of the present invention includes a substrate including a display area and a non-display area adjacent to the display area. The non-display area includes a blocking area. An insulating layer is disposed on the substrate. An organic layer is disposed on the insulating layer in the display area and the non-display area. A common electrode is disposed on the organic layer. An inorganic encapsulation layer is disposed on the common electrode. The common electrode and the inorganic encapsulation layer define a groove in the organic layer in the blocking area. A portion of the bottom surface of the common electrode defining the groove is in direct contact with the insulating layer disposed on the substrate.

[0021] The auxiliary pattern may be disposed between the substrate and the insulating layer. The auxiliary pattern may overlap the groove along a direction orthogonal to an upper surface of the substrate.

[0022] The organic layer may include a first interlayer insulating layer and a second interlayer insulating layer disposed on the first interlayer insulating layer.

[0023] The organic encapsulation layer may be disposed on the inorganic encapsulation layer in the display area and the non-display area. The organic encapsulation layer may fill the groove.

[0024] According to an exemplary embodiment of the present invention, a display device can prevent moisture or oxygen from flowing into a display area surrounded by an encapsulation layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and other features of the present invention will become more apparent by describing in detail exemplary embodiments of the present invention with reference to the accompanying drawings, in which:

[0026] Figure 1 is a layout diagram of a display device according to an exemplary embodiment of the present invention.

[0027] Figure 2 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0028] Figure 3 yes Figure 2 Cross-sectional view of a portion of.

[0029] Figure 4 is a schematic diagram of exemplary pathways of water or oxygen.

[0030] Figure 5 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0031] Figure 6 yes Figure 5 Cross-sectional view of a portion of.

[0032] Figure 7 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0033] Figure 8 yes Figure 7 Cross-sectional view of a portion of.

[0034] Fig. 9 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0035] Fig.10 yes Fig. 9 Cross-sectional view of a portion of.

[0036] Fig.11 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0037] Fig.12 yes Fig.11 Cross-sectional view of a portion of.

[0038] Fig.13 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

[0039] Fig.14 yes Fig.13 Cross-sectional view of a portion of.

[0040] Fig.15 A method of manufacturing a display device according to an exemplary embodiment of the present invention is illustrated.

[0041] Fig.16 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0042] Fig.17 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0043] Fig.18 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0044] Fig.19 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0045] Fig. 20 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0046] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. In this regard, the exemplary embodiments may have different forms and should not be construed as being limited to the exemplary embodiments of the present invention described herein.

[0047] Example

[0048] Like reference numerals may refer to like elements throughout the specification and drawings.

[0049] The sizes of elements in the drawings may be exaggerated for clarity of description.

[0050] It will be understood that when an element such as a layer, film, region, or panel is referred to as being “on” another element, it can be directly on the other element or intervening elements may be present.

[0051] Throughout the specification, the phrase "on a plane" or "in a plan view" may refer to observing an object part from the top, and the phrase "on a section" or "a cross-sectional view" may refer to observing a section in which the object part is vertically cut from the side.

[0052] The following will refer to Figures 1 to 3 A display device according to an exemplary embodiment of the present invention is described in more detail. Figure 1 is a layout diagram of a display device according to an exemplary embodiment of the present invention. Figure 2 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention. Figure 3 yes Figure 2 Cross-sectional view of a portion of.

[0053] refer to Figure 1 , the display device 100 according to an exemplary embodiment of the present invention may include: a display area DA, which may be configured to display an image; and a non-display area NDA, which is disposed outside the display area DA. For example, the non-display area NDA may be adjacent to the display area DA. The non-display area NDA may be arranged at four sides of the display area DA in a plan view. Alternatively, the non-display area NDA may be arranged at less than four sides (e.g., at three sides) of the display area DA in a plan view. A blocking area VA may be disposed in the non-display area NDA. The blocking area VA may be configured to block the inflow of moisture or oxygen (e.g., into the display area DA). The common voltage transmission line 500 may transmit a common voltage in an area of ​​the non-display area NDA. The blocking area VA may surround the display area DA, and may be disposed between the display area DA and the common voltage transmission line 500. In an exemplary embodiment of the present invention, the common voltage transmission line 500 also surrounds the display area DA, however, the exemplary embodiments of the present invention are not limited thereto, and the common voltage transmission line 500 may be adjacent to a portion of the display area DA.

[0054] A driver transmitting a signal to the display area DA may be disposed in the non-display area NDA.

[0055] refer to Figure 2According to an exemplary embodiment of the present invention, the display device 100 may include a substrate 110. The substrate 110 may be flexible and may include at least one flexible material. The substrate 110 may include a plurality of insulating films overlapping each other (e.g., stacked on each other), and may further include a barrier film disposed between the overlapping insulating films.

[0056] The buffer layer 120 may be disposed on the substrate 110. The buffer layer 120 may have a single-layer structure including an insulating layer. The insulating layer may include silicon nitride (SiNx) or silicon oxide (SiOx). Alternatively, the insulating layer may have a multilayer structure including silicon nitride (SiNx) or silicon oxide (SiOx). The buffer layer 120 may prevent the infiltration of impurities or moisture. For example, the buffer layer 120 may prevent moisture or oxygen from infiltrating, such as preventing moisture or oxygen from infiltrating into an emission layer or a signal line of the display device 100.

[0057] The first semiconductor layer 135 and the second semiconductor layer 136 may be disposed on the buffer layer 120 in the display area DA.

[0058] The first semiconductor layer 135 and the second semiconductor layer 136 may each include polycrystalline silicon or an oxide semiconductor. As an example, the oxide semiconductor may include one of oxides based on titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), germanium (Ge), zinc (Zn), gallium (Ga), tin (Sn), and indium (In), or a composite oxide thereof.

[0059] The first semiconductor layer 135 may include a first channel region 1355, and a first source region 1356 and a first drain region 1357 disposed on opposite sides of the first channel region 1355. The second semiconductor layer 136 may include a second channel region 1365, and a second source region 1366 and a second drain region 1367 disposed on opposite sides of the second channel region 1365. The first channel region 1355 of the first semiconductor layer 135 and the second channel region 1365 of the second semiconductor layer 136 may be regions in which impurities are not doped, and the first source region 1356 and the first drain region 1357 of the first semiconductor layer 135 and the second source region 1366 and the second drain region 1367 of the second semiconductor layer 136 may be regions in which conductive impurities are doped.

[0060] The first gate insulating layer 140 may be disposed on the first semiconductor layer 135 and the second semiconductor layer 136 .

[0061] The first gate electrode 125 and the second gate electrode 126 may be disposed on the first gate insulating layer 140 of the display area DA, and the first auxiliary pattern 400 may be disposed on the first gate insulating layer 140 of the blocking area VA of the non-display area NDA. The first gate electrode 125 and the second gate electrode 126 may be referred to herein as a first gate line.

[0062] The first gate electrode 125 may overlap the first channel region 1355 (e.g., in a direction orthogonal to the upper surface of the substrate 110), and the second gate electrode 126 may overlap the second channel region 1365 (e.g., in a direction orthogonal to the upper surface of the substrate 110). The first auxiliary pattern 400 may include the same material as the first gate electrode 125 and the second gate electrode 126. This may be achieved by forming the first auxiliary pattern 400 and the first gate electrode 125 and the second gate electrode 126 substantially simultaneously (e.g., by using the same material).

[0063] A second gate insulating layer 142 may be disposed on the first and second gate electrodes 125 and 126 and the first auxiliary pattern 400 .

[0064] The first gate insulating layer 140 and the second gate insulating layer 142 may each have a single layer including silicon oxide (SiOx) or silicon nitride (SiNx), or alternatively, each of the first gate insulating layer 140 and the second gate insulating layer 142 may have a multilayer structure including silicon oxide (SiOx) or silicon nitride (SiNx).

[0065] A storage electrode 127 may be disposed on the second gate insulating layer 142. The storage electrode 127 may be referred to herein as a second gate line.

[0066] The first insulating layer 150 may be disposed on the storage electrode 127. The first insulating layer 150 may have a single layer structure including silicon oxide (SiOx) or silicon nitride (SiNx), or alternatively, a multi-layer structure including silicon oxide (SiOx) or silicon nitride (SiNx).

[0067] The first gate insulating layer 140, the second gate insulating layer 142 and the first insulating layer 150 have a first contact hole 56 overlapping with the first source region 1356 of the first semiconductor layer 135 (for example, along a direction orthogonal to the upper surface of the substrate 110), a second contact hole 57 overlapping with the first drain region 1357 of the first semiconductor layer 135 (for example, along a direction orthogonal to the upper surface of the substrate 110), a third contact hole 66 overlapping with the second source region 1366 of the second semiconductor layer 136 (for example, along a direction orthogonal to the upper surface of the substrate 110), and a fourth contact hole 67 overlapping with the second drain region 1367 of the second semiconductor layer 136 (for example, along a direction orthogonal to the upper surface of the substrate 110).

[0068] The first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 may be formed on the first insulating layer 150 of the display area DA, and the common voltage transmission line 500 may be formed on the first insulating layer 150 of the non-display area NDA. The first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 may be referred to as a first data line.

[0069] The common voltage transmission line 500 may include the same material as the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87. This may be achieved by forming the common voltage transmission line 500, the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 substantially at the same time (e.g., by using the same material).

[0070] The first input electrode 76 may be connected to the first source region 1356 of the first semiconductor layer 135 through the first contact hole 56. The first output electrode 77 may be connected to the first drain region 1357 of the first semiconductor layer 135 through the second contact hole 57. The second input electrode 86 may be connected to the second source region 1366 of the second semiconductor layer 136 through the third contact hole 66. The second output electrode 87 may be connected to the second drain region 1367 of the second semiconductor layer 136 through the fourth contact hole 67. The first output electrode 77 is connected to the second gate electrode 126. For example, the first output electrode 77 may be directly connected to and / or electrically connected to the second gate electrode 126.

[0071] The second insulating layer 152 may be disposed on the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87. The second insulating layer 152 may have a single-layer structure including silicon oxide (SiOx) or silicon nitride (SiNx), or may have a multi-layer structure including silicon oxide (SiOx) or silicon nitride (SiNx).

[0072] The first interlayer insulating layer 160 may be disposed on the second insulating layer 152. The first interlayer insulating layer 160 may include an organic material. The second insulating layer 152 and the first interlayer insulating layer 160 may have a fifth contact hole 71 overlapping with the first input electrode 76 (e.g., in a direction orthogonal to the upper surface of the substrate 110), a sixth contact hole 72 overlapping with the second input electrode 86 (e.g., in a direction orthogonal to the upper surface of the substrate 110), and a seventh contact hole 73 overlapping with the second output electrode 87 (e.g., in a direction orthogonal to the upper surface of the substrate 110). The first insulating layer 150, the second insulating layer 152, and the first interlayer insulating layer 160 may have an eighth contact hole 74 overlapping with the storage electrode 127 (e.g., in a direction orthogonal to the upper surface of the substrate 110).

[0073] The data line 171, the driving voltage line 172, and the output member 173 may be disposed on the first interlayer insulating layer 160. The data line 171, the driving voltage line 172, and the output member 173 may each be referred to as a second data line.

[0074] The data line 171 may be connected to the first input electrode 76 through the fifth contact hole 71. The driving voltage line 172 may be connected to the second input electrode 86 through the sixth contact hole 72, and may be connected to the storage electrode 127 through the eighth contact hole 74. The output member 173 may be connected to the second output electrode 87 through the seventh contact hole 73.

[0075] The second interlayer insulating layer 180 may be disposed on the data line 171, the driving voltage line 172, and the output member 173. The second interlayer insulating layer 180 may include an organic material.

[0076] The second interlayer insulating layer 180 may have a ninth contact hole 81 overlapping the output member 173 (eg, in a direction orthogonal to the upper surface of the substrate 110 ).

[0077] The groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180. Each of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may include an organic layer disposed in the blocking area VA of the non-display area NDA. The blocking area VA may overlap with the thin film encapsulation layer 80 (e.g., in a direction orthogonal to the upper surface of the substrate 110). The thin film encapsulation layer 80 is described in more detail below. The groove 90 may overlap with the first auxiliary pattern 400 disposed in the blocking area VA.

[0078] According to an exemplary embodiment of the present invention, the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may both include an organic material and may be collectively referred to herein as an organic layer. For example, the first interlayer insulating layer 160 may include an organic material different from the organic material included in the second interlayer insulating layer 180. Alternatively, the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may include the same organic material as each other.

[0079] The groove 90 formed in the blocking area VA may surround the display area DA, and may block external moisture and air that may flow into the display area DA through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA. For example, the groove 90 may block moisture or oxygen from penetrating, for example, to an emission layer or a signal line of a display device.

[0080] The pixel electrode 710 may be disposed on the second interlayer insulating layer 180 disposed in the display area DA. The pixel electrode 710 may be connected to the output member 173 through a ninth contact hole 81 formed in the second interlayer insulating layer 180.

[0081] The pixel electrode 710 may be an anode of the organic light emitting element.

[0082] A first electrode member 501 in contact with (e.g., in direct contact with) the common voltage transmission line 500 may be disposed on the second interlayer insulating layer 180 disposed in the non-display area NDA. The first electrode member 501 may include the same material as the pixel electrode 710. This may be achieved by forming the first electrode member 501 and the pixel electrode 710 substantially simultaneously (e.g., by using the same material).

[0083] The pixel defining layer 190 may be disposed on the pixel electrode 710. The pixel defining layer 190 may have an opening 195 that overlaps the pixel electrode 710 (e.g., in a direction orthogonal to the upper surface of the substrate 110). The opening 195 of the pixel defining layer 190 may be disposed on the display area DA, and the pixel defining layer 190 may be mainly disposed on the display area. However, the pixel defining layer 190 may overlap at least a portion of the non-display area NDA (e.g., may overlap a portion of the blocking area VA). The pixel defining layer 190 may include a polyacrylate-based resin or a polyimide-based resin, and a silica-based inorganic material.

[0084] The organic emission layer 720 may be disposed in the opening 195 of the pixel defining layer 190 .

[0085] The organic emission layer 720 may include a plurality of layers, such as an emission layer and one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL). In the case where the organic emission layer 720 includes all of the above layers, the hole injection layer may be disposed on the pixel electrode 710 as an anode, and the hole transport layer, the emission layer, the electron transport layer, and the electron injection layer may be sequentially stacked thereon.

[0086] The common electrode 730 may be disposed on the pixel defining layer 190 and the organic emission layer 720. The common electrode 730 may be a cathode of the organic light emitting element. Therefore, the pixel electrode 710, the organic emission layer 720, and the common electrode 730 may be included in the organic light emitting element 70.

[0087] The organic light emitting diode display may have, for example, a top display type, a rear display type, and a double-sided display type according to a direction in which the organic light emitting element 70 emits light.

[0088] In the case of the top display type, the pixel electrode 710 may be a reflective layer, and the common electrode 730 may be a semi-transparent layer or a transparent layer. In the case of the bottom display type, the pixel electrode 710 may be a semi-transparent layer, and the common electrode 730 may be a reflective layer. In the case of the double-sided display type, the pixel electrode 710 and the common electrode 730 may be a transparent layer or a semi-transparent layer. The reflective layer and the semi-transparent layer may both contain one or more metals of magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr) and aluminum (Al), or alloys thereof. The light reflectivity of the reflective layer and the light transmittance of the semi-transparent layer may be determined by their thickness. As an example, the semi-transparent layer may have a thickness of 200nm or less. As the thickness decreases, the transmittance of light may increase, but if the thickness is relatively small, the resistance may increase. The transparent layer may contain materials such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide) or indium oxide.

[0089] The common electrode 730 may be formed on substantially the entire display area DA, and may extend to the non-display area NDA. The common electrode 730 may be in direct contact with the first electrode member 501.

[0090] The common electrode 730 may receive the common voltage transmitted to the common voltage transmission line 500 through the first electrode member 501 that is in direct contact with the common voltage transmission line 500 .

[0091] If a gate-on signal is applied to the first gate electrode 125 and a data signal is applied from the data line 171 to the first input electrode 76, the data signal may be transmitted to the first output electrode 77 and then may be applied to the second gate electrode 126. The driving voltage applied to the driving voltage line 172 may be applied to the second input electrode 86 and then may be applied to the second output electrode 87 through the second channel region 1365 of the second semiconductor layer 136. The voltage applied to the second output electrode 87 may be transmitted to the pixel electrode 710 through the output member 173, and the common voltage may be applied to the common electrode 730 through the common voltage transmission line 500. The pixel electrode 710 may be an anode of a hole injection electrode, and the common electrode 730 may be a cathode of an electron injection electrode. Holes and electrons from the pixel electrode 710 and the common electrode 730 may be injected into the organic emission layer 720, respectively. When the excitons including the injected holes and electrons change from an excited state to a ground state, light emission may be achieved.

[0092] The capacitor Cst may be connected between the second gate electrode 126 and the storage electrode 127. The capacitor Cst may provide charges and maintain a data signal applied to the second gate electrode 126.

[0093] The first spacer SP1 and the second spacer SP2 may be disposed in an outer portion of the non-display area NDA. The first spacer SP1 may overlap the common voltage transmission line 500 (e.g., in a direction orthogonal to the upper surface of the substrate 110), and the second spacer SP2 may be disposed farther from the display area DA than the first spacer SP1. For example, the second spacer SP2 may be disposed outside the first spacer SP1. For example, the first spacer SP1 may be relatively closer to the groove 90 than the second spacer SP2, and each of the first spacer SP1 and the second spacer SP2 may be positioned in the non-display area NDA in an area separated from the blocking area VA of the non-display area NDA.

[0094] The first spacer SP1 may include the same material as the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA. This may be obtained by forming the first spacer SP1, the first interlayer insulating layer 160, and the second interlayer insulating layer 180 substantially at the same time (e.g., by using the same material). The second spacer SP2 may include the same material as the first interlayer insulating layer 160, the second interlayer insulating layer 180, the pixel defining layer 190, and the additional insulating layer disposed in the display area DA. This may be obtained by forming the second spacer SP2, the first interlayer insulating layer 160, the second interlayer insulating layer 180, the pixel defining layer 190, and the additional insulating layer substantially at the same time (e.g., by using the same material).

[0095] The thin film encapsulation layer 80 may be disposed on the common electrode 730. The thin film encapsulation layer 80 may be formed by alternately stacking at least one inorganic layer and at least one organic layer, and a plurality of inorganic layers or a plurality of organic layers may be alternately and repeatedly stacked.

[0096] In an exemplary embodiment of the present invention, the thin film encapsulation layer 80 may include a first inorganic encapsulation layer 810a and a second inorganic encapsulation layer 810b. As an example, the thin film encapsulation layer 80 may include an organic encapsulation layer 820 disposed between the first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b. For example, the second inorganic encapsulation layer 810b may be formed on the upper surface and the side surface of the organic encapsulation layer 820. The first inorganic encapsulation layer 810a may be conformally formed on the side surface and the bottom surface of the groove 90. The first inorganic encapsulation layer 810a may be in direct contact with the common electrode 730 formed on the side surface and the bottom surface of the groove 90.

[0097] The first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b may be formed on substantially the entire surface of the substrate 110. The first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b may be disposed on the first spacer SP1 and the second spacer SP2, however, the organic encapsulation layer 820 may not be disposed outside the first spacer SP1 and the second spacer SP2 in the non-display area NDA. For example, the organic encapsulation layer 820 may be spaced apart from the first spacer SP1 and the second spacer SP2 along a direction parallel to the upper surface of the substrate 110. Therefore, the organic encapsulation layer 820 may not overlap with the first spacer SP1 or the second spacer SP2 (for example, along a direction orthogonal to the upper surface of the substrate 110).

[0098] When the organic encapsulation layer 820 is formed, the first spacer SP1 and the second spacer SP2 can be used as a barrier so that the organic material contained in the organic encapsulation layer 820 does not overflow, and because the organic material does not overflow to the outside of the first spacer SP1 and the second spacer SP2, the organic encapsulation layer 820 can be formed to be not set on the outer portion of the first spacer SP1 and the second spacer SP2.

[0099] The groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed at the blocking area VA of the non-display area NDA. For example, the groove 90 may completely penetrate each of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 formed in the blocking area VA may overlap the first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b of the thin film encapsulation layer 80 and the organic encapsulation layer 820 (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0100] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the barrier area VA overlapping the thin film encapsulation layer 80, external moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA. For example, the groove 90 can prevent moisture or oxygen from penetrating, such as preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0101] When the groove 90 overlaps the first auxiliary pattern 400 disposed at the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110), the depth of the groove 90 may be greater than the sum of the thicknesses of the first interlayer insulating layer 160 and the second interlayer insulating layer 180. In this way, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed at the blocking area VA is reduced, when the groove 90 is formed, the organic material may be prevented from remaining, and external moisture and air may be prevented from flowing through the organic material located in the groove 90.

[0102] refer to Figure 2 The structure of the pixel disposed at the display area DA of the display device is described as an example, and the pixel structure of the display device according to the exemplary embodiment of the present invention is not limited to the reference Figure 2 The signal line and the organic light emitting element may be formed in various configurations within the scope that can be modified or implemented by those skilled in the art. For example, referring to Figure 2 As a display device, a display device including two thin film transistors (TFTs) and one capacitor is described as an example, but the exemplary embodiments of the present invention are not limited thereto. For example, a display device according to an exemplary embodiment of the present invention is not limited to a specific number of thin film transistors, capacitors, or wires.

[0103] Reference below Figure 3 The blocking area VA is described in more detail.

[0104] refer to Figure 3 , the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA may overlap with the first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b of the thin film encapsulation layer 80 and the organic encapsulation layer 820 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 may overlap with the first auxiliary pattern 400 disposed at the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110). The first auxiliary pattern 400 may include the same material as the first gate electrode 125 and the second gate electrode 126 disposed in the display area DA. This may be obtained by forming the first auxiliary pattern 400, the first gate electrode 125 and the second gate electrode 126 substantially at the same time (e.g., by using the same material).

[0105] As an example, when the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA overlapping the thin film encapsulation layer 80, external moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA.

[0106] When the groove 90 overlaps the first auxiliary pattern 400 disposed at the blocking area VA, the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may be greater than the second thickness D2 of the groove 90 formed by the step of the first auxiliary pattern 400. For example, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is less than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, the organic material may be prevented from remaining, and external moisture and air may be prevented from flowing through the organic material remaining in the groove 90.

[0107] A display device according to an exemplary embodiment of the present invention may include a substrate 110 including a display area DA and a non-display area NDA adjacent to the display area DA. The non-display area NDA may include a blocking area VA. An insulating layer (e.g., at least one of the insulating layers 140, 142, 150, and 152) may be disposed on the substrate 110. An organic layer (e.g., at least one of the first interlayer insulating layer 160 and the second interlayer insulating layer 180) may be disposed on the insulating layer in the display area DA and the non-display area NDA. A common electrode 730 may be disposed on the organic layer. An inorganic encapsulation layer (e.g., a first inorganic encapsulation layer 810a) may be disposed on the common electrode 730. The common electrode 730 and the first inorganic encapsulation layer 810a may define a groove 90 in the organic layer in the blocking area VA. A portion of the bottom surface of the common electrode 730 defining the groove 90 may be in direct contact with an insulating layer (e.g., with the second insulating layer 152) disposed on the substrate 110. An auxiliary pattern (e.g., a first auxiliary pattern 400) may be disposed between the substrate 110 and the insulating layer. The first auxiliary pattern 400 may overlap the groove 90 in a direction orthogonal to the upper surface of the substrate 110. The organic layer may include a first interlayer insulating layer 160 and a second interlayer insulating layer 180 disposed on the first interlayer insulating layer 160.

[0108] According to an exemplary embodiment of the present invention, an organic encapsulation layer 820 may be disposed on the first inorganic encapsulation layer 810a in the display area DA and the non-display area NDA. The organic encapsulation layer 820 may fill the groove 90. For example, the organic encapsulation layer 820 may be conformally formed on the common electrode 730 in the blocking area VA.

[0109] The following will refer to Figure 4 An example in which the organic material remains in the groove 91 is described in more detail. Figure 4 is a schematic diagram of exemplary pathways of water or oxygen.

[0110] refer to Figure 4, when the groove 91 is formed so as not to overlap with the auxiliary pattern and not to directly contact the insulating layer below the groove 91, the organic layer may remain in the groove 91, and moisture or oxygen P flowing in from the outside may move through the remaining organic layer (e.g., may pass under the groove 91). For example, the organic material remaining in the groove 91 may be a moving path of moisture or oxygen P flowing in from the outside.

[0111] However, in a display device according to an exemplary embodiment of the present invention, when the groove 90 formed in the blocking area VA is formed to overlap with the first auxiliary pattern 400 (e.g., along a direction orthogonal to the upper surface of the substrate 110), the depth of the groove 90 can be shallow while still blocking the penetration of moisture or oxygen. Therefore, compared with a groove (e.g., groove 91) having a relatively deep depth when the groove is formed by exposure, the possibility of organic material residue (e.g., below the groove 90) can be reduced. As an example, reducing the distance between the insulating layer (e.g., the second insulating layer 152) below the groove 90 and the bottom horizontal plane of the groove 90 can prevent moisture or oxygen from flowing through the space below the groove 90. For example, the bottommost horizontal plane of the groove 90 can be in direct contact with the insulating layer (e.g., the second insulating layer 152) below the groove 90. Therefore, the groove 90 can prevent moisture or oxygen from penetrating, such as preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0112] The following will refer to Figure 5 and Figure 6 A display device according to an exemplary embodiment of the present invention is described in more detail. Figure 5 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. Figure 6 yes Figure 5 Cross-sectional view of a portion of.

[0113] Reference below Figure 5 and Figure 6 The display device described is similar to the above reference Figure 2 and Figure 3 Therefore, the display device described above Figure 2 and Figure 3 The same or substantially the same components may be referred to below for repeated descriptions. Figure 5 and Figure 6 Omit.

[0114] refer to Figure 5 and Figure 6, a display device according to an exemplary embodiment of the present invention may include a second auxiliary pattern 401 disposed in the blocking area VA. The second auxiliary pattern 401 may include a first layer 401a disposed between the first gate insulating layer 140 and the second gate insulating layer 142, and a second layer 401b overlapping the first layer 401a (e.g., along a direction orthogonal to the upper surface of the substrate 110) and disposed between the second gate insulating layer 142 and the first insulating layer 150. The first layer 401a may have a width wider than that of the second layer 401b in a direction parallel to the upper surface of the substrate 110.

[0115] The first layer 401a of the second auxiliary pattern 401 may be formed substantially simultaneously with the first and second gate electrodes 125 and 126 of the display area DA and may include the same material as the first and second gate electrodes 125 and 126 of the display area DA. The second layer 401b of the second auxiliary pattern 401 may be formed substantially simultaneously with the storage electrode 127 of the display area DA and may include the same material as the storage electrode 127 of the display area DA.

[0116] refer to Figure 6 The groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA may overlap with the first inorganic encapsulation layer 810a, the second inorganic encapsulation layer 810b, and the organic encapsulation layer 820 of the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 may overlap with the second auxiliary pattern 401 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0117] The groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA overlapping the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110), and thus, external moisture and air may be prevented from flowing through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA into the display area DA covered by the thin film encapsulation layer 80. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, from penetrating into an emission layer or a signal line of a display device.

[0118] The groove 90 may overlap with the second auxiliary pattern 401 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110). Since the second auxiliary pattern 401 includes the first layer 401a and the second layer 401b overlapping each other, the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may be greater than the second thickness D2 of the groove 90 formed by the step of the first layer 401a and the second layer 401b. Therefore, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is less than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, the organic material may be prevented from remaining, and the external moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture and oxygen may not flow through the space formed below the groove 90.

[0119] The following will refer to Figure 7 and Figure 8 A display device according to an exemplary embodiment of the present invention is described in more detail. Figure 7 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. Figure 8 yes Figure 7 Cross-sectional view of a portion of.

[0120] Reference below Figure 7 and Figure 8 The display device described is similar to the above reference Figure 2 and Figure 3 Therefore, the display device described above Figure 2 and Figure 3 The same or substantially the same components may be referred to below. Figure 7 and Figure 8 Omit.

[0121] refer to Figure 7 and Figure 8 , the display device according to an exemplary embodiment of the present invention may include a third auxiliary pattern 402 disposed in the blocking area VA. The third auxiliary pattern 402 may be disposed between the first insulating layer 150 and the second insulating layer 152. The third auxiliary pattern 402 may be formed substantially simultaneously with the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 in the display area DA, and may include the same material as the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 in the display area DA.

[0122] refer to Figure 8The groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA may overlap the first inorganic encapsulation layer 810a and the second inorganic encapsulation layer 810b and the organic encapsulation layer 820 of the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 may overlap the third auxiliary pattern 402 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0123] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the barrier area VA overlapping the thin film encapsulation layer 80, external moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA. Therefore, the groove 90 can prevent moisture or oxygen from penetrating, for example, from penetrating into the emission layer or the signal line of the display device.

[0124] The groove 90 may overlap with the third auxiliary pattern 402 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110). The first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may be greater than the second thickness D2 of the groove 90 formed by the step of the third auxiliary pattern 402. Therefore, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is formed to be less than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, the organic material may be prevented from remaining, and external moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed below the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0125] The following will refer to Fig. 9 and Fig.10 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig. 9 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. Fig.10 yes Fig. 9 Cross-sectional view of a portion of.

[0126] Reference below Fig. 9 and Fig.10 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3) The same or substantially the same repeated description of the components can be referred to below Fig. 9 and Fig.10 Omit.

[0127] The display device according to an exemplary embodiment of the present invention may include a fourth auxiliary pattern 403 disposed in the blocking area VA. The fourth auxiliary pattern 403 may include a first layer 403a disposed between the first insulating layer 150 and the second insulating layer 152, and a second layer 403b overlapping the first layer 403a and disposed on the second insulating layer 152 (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0128] The first layer 403a of the fourth auxiliary pattern 403 may be formed substantially simultaneously with the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 of the display area DA, and may have the same material as the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 of the display area DA. The second layer 403b of the fourth auxiliary pattern 403 may be formed substantially simultaneously with the data line 171, the driving voltage line 172, and the output member 173 of the display area DA, and may have the same material as the data line 171, the driving voltage line 172, and the output member 173 of the display area DA.

[0129] refer to Fig.10 The groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA may overlap the first inorganic encapsulation layer 810a, the second inorganic encapsulation layer 810b, and the organic encapsulation layer 820 of the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 may overlap the fourth auxiliary pattern 403 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0130] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, external moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0131] The groove 90 may overlap with the fourth auxiliary pattern 403 disposed in the blocking area VA. Since the fourth auxiliary pattern 403 includes the first layer 403a and the second layer 403b overlapping each other, the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may be greater than the second thickness D2 of the groove 90 formed by the step of the first layer 403a and the second layer 403b of the fourth auxiliary pattern 403. Therefore, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is formed to be smaller than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, the organic material may be prevented from remaining, and the external moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture and oxygen may not flow through the space below the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or the signal line of the display device.

[0132] The following will refer to Fig.11 and Fig.12 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.11 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. Fig.12 yes Fig.11 Cross-sectional view of a portion of.

[0133] Reference below Fig.11 and Fig.12 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.11 and Fig.12 Omit.

[0134] refer to Fig.11 and Fig.12 , the display device according to an exemplary embodiment of the present invention may include a fifth auxiliary pattern 404 disposed in the blocking area VA. The fifth auxiliary pattern 404 may be disposed on the second insulating layer 152. The fifth auxiliary pattern 404 may be formed substantially simultaneously with the data line 171, the driving voltage line 172, and the output member 173 of the display area DA, and may include the same material as the data line 171, the driving voltage line 172, and the output member 173 of the display area DA.

[0135] refer to Fig.12The groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA may overlap the first inorganic encapsulation layer 810a, the second inorganic encapsulation layer 810b, and the organic encapsulation layer 820 of the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110). The groove 90 may overlap the fifth auxiliary pattern 404 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110).

[0136] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, external moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0137] The groove 90 may overlap with the fifth auxiliary pattern 404 disposed in the blocking area VA (e.g., along a direction orthogonal to the upper surface of the substrate 110). The first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 may be greater than the second thickness D2 of the groove 90 formed by the step of the fifth auxiliary pattern 404. Therefore, since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is formed to be less than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed below the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0138] The following will refer to Fig.13 and Fig.14 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.13 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. Fig.14 yes Fig.13 Cross-sectional view of a portion of.

[0139] Reference below Fig.13 and Fig.14 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.13 and Fig.14 Omit.

[0140] In the display device according to an exemplary embodiment of the present invention, the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be smaller than the thickness of the first interlayer insulating layer 160 in the area immediately adjacent to the blocking area VA. For example, the fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be smaller than the third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA except the display area DA and the blocking area VA.

[0141] As an example, since the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA is formed to be reduced, the second thickness D2 of the groove 90 formed in the blocking area VA can be formed to be less than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA.

[0142] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA overlapping the thin film encapsulation layer 80 (e.g., along a direction orthogonal to the upper surface of the substrate 110), moisture and air may be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the non-display area NDA. Since the height of the groove 90 formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA is formed to be smaller than the thickness of the first interlayer insulating layer 160 and the second interlayer insulating layer 180, when the groove 90 is formed, an organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into an emission layer or a signal line of a display device.

[0143] In an exemplary embodiment of the present invention, only the thickness of the first interlayer insulation layer 160 is smaller in the blocking area VA, however, the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be smaller in the blocking area VA.

[0144] The following will refer to Fig.15 A method of distinguishing the thickness of the interlayer insulating layer is described in more detail. Fig.15 A method of manufacturing a display device according to an exemplary embodiment of the present invention is illustrated.

[0145] refer to Fig.15, the exposure mask 50 may have a transparent region A, a semi-transparent region B, and a photoresist region C. The photosensitive layer 60 may be deposited on the substrate 110 and may be exposed by using the exposure mask 50 having the transparent region A, the semi-transparent region B, and the photoresist region C.

[0146] Light may be applied to the photosensitive layer 60 disposed in the transparent region A, light may not be applied to the photosensitive layer 60 disposed in the light blocking region C, and light may be partially applied to the photosensitive layer 60 disposed in the semi-transparent region B.

[0147] When photosensitive layer 60 has negative photosensitivity, as photosensitive layer 60 exposed through exposure mask 50 is developed, photosensitive layer 60 disposed in transparent region A may be substantially completely removed, photosensitive layer 60 disposed in semi-transparent region B may be only partially removed to reduce the thickness of photosensitive layer 60, and photosensitive layer 60 disposed in photoblocking region C may be substantially maintained without thickness change. When photosensitive layer 60 has positive photosensitivity, as photosensitive layer 60 exposed through exposure mask 50 is developed, photosensitive layer 60 disposed in transparent region A may be substantially maintained without thickness change, photosensitive layer 60 disposed in semi-transparent region B may be only partially removed to reduce the thickness of photosensitive layer 60, and photosensitive layer 60 disposed in photoblocking region C may be substantially completely removed. For example, the area where the photosensitive layer 60 is substantially completely removed may correspond to the area where the contact holes 71, 72, 73 and 74 of the first interlayer insulating layer 160 are formed, the area where the photosensitive layer 60 is partially removed to reduce the thickness of the photosensitive layer 60 may correspond to the first interlayer insulating layer 160 disposed in the blocking area VA and having the fourth thickness D4, and the area where the photosensitive layer 60 is substantially maintained without a change in thickness may correspond to the area where the first interlayer insulating layer 160 having the third thickness D3 without the contact holes 71, 72, 73 and 74 is disposed.

[0148] Therefore, since a photosensitive film pattern including three areas having different thicknesses is formed by using a half-tone mask, the first interlayer insulating layer 160 can be etched by using the photosensitive film pattern, and then the height of the photosensitive film pattern can be reduced, and the first interlayer insulating layer 160 can be etched, contact holes 71, 72, 73 and 74 can be formed in the first interlayer insulating layer 160, and substantially simultaneously, the first interlayer insulating layer 160 having a fourth thickness D4 less than the third thickness D3 can be formed by reducing the height of the first interlayer insulating layer 160 set in the blocking area VA.

[0149] Alternatively, the organic material layer forming the first interlayer insulating layer 160 itself may have photosensitivity.

[0150] refer to Fig.15, the semi-transparent area B of the exposure mask 50 may have a slit, however, the semi-transparent area B of the exposure mask 50 may also have a relatively small thickness.

[0151] Reference below Fig.16 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.16 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0152] Reference below Fig.16 The display device described is similar to the display device above (for example, reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.16 Omit.

[0153] refer to Fig.16 , the display device according to an exemplary embodiment of the present invention may include a first auxiliary pattern 400 disposed in the blocking area VA, and a fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be less than a third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA other than the display area DA and the blocking area VA. A groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA, and the groove 90 may overlap with the first auxiliary pattern 400 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110). The first auxiliary pattern 400 may be formed substantially simultaneously with the first gate electrode 125 and the second gate electrode 126 disposed in the display area DA, and may include the same material as the first gate electrode 125 and the second gate electrode 126 disposed in the display area DA.

[0154] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0155] When the groove 90 may overlap with the first auxiliary pattern 400 disposed in the blocking area VA and the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be reduced, the second thickness D2 of the groove 90 formed in the blocking area VA may be less than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA, and thus when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent the penetration of moisture or oxygen, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0156] In an exemplary embodiment of the present invention, the thickness of the first interlayer insulation layer 160 may be smaller in the blocking area VA, however the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be reduced in the blocking area VA.

[0157] Reference below Fig.17 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.17 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0158] Reference below Fig.17 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.17 Omit.

[0159] The display device according to an exemplary embodiment of the present invention may include a second auxiliary pattern 401 disposed in the blocking area VA, and a fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be less than a third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA except the display area DA and the blocking area VA. A groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA, and the groove 90 may overlap with the second auxiliary pattern 401 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110).

[0160] The second auxiliary pattern 401 may include a first layer 401 a disposed between the first gate insulating layer 140 and the second gate insulating layer 142 , and a second layer 401 b overlapping the first layer 401 a and disposed between the second gate insulating layer 142 and the first insulating layer 150 .

[0161] The first layer 401a of the second auxiliary pattern 401 may be formed substantially simultaneously with the first gate electrode 125 and the second gate electrode 126 of the display area DA, and may include the same material as the first gate electrode 125 and the second gate electrode 126 of the display area DA, and the second layer 401b of the second auxiliary pattern 401 may be formed substantially simultaneously with the storage electrode 127 of the display area DA, and may include the same material as the storage electrode 127 of the display area DA.

[0162] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0163] The groove 90 may overlap with the second auxiliary pattern 401 disposed in the blocking area VA, and the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be reduced, and the second thickness D2 of the groove 90 formed in the blocking area VA may be formed to be smaller than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA, so that when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0164] In an exemplary embodiment of the present invention, the thickness of the first interlayer insulation layer 160 may be relatively small in the blocking area VA, however the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be reduced in the blocking area VA.

[0165] The following will refer to Fig.18 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.18 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0166] Reference below Fig.18The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.18 Omit.

[0167] refer to Fig.18 , the display device according to an exemplary embodiment of the present invention may include a third auxiliary pattern 402 disposed in the blocking area VA, and a fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be less than a third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA except the display area DA and the blocking area VA. A groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA, and the groove 90 may overlap with the third auxiliary pattern 402 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110).

[0168] The third auxiliary pattern 402 may be disposed between the first insulating layer 150 and the second insulating layer 152. The third auxiliary pattern 402 may be formed substantially simultaneously with the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 of the display area DA and may include the same material as the first input electrode 76, the first output electrode 77, the second input electrode 86, and the second output electrode 87 of the display area DA.

[0169] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0170] The groove 90 may overlap with the third auxiliary pattern 402 disposed in the blocking area VA, and the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be reduced, and the second thickness D2 of the groove 90 formed in the blocking area VA may be less than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA, so when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0171] In an exemplary embodiment of the present invention, the thickness of the first interlayer insulation layer 160 may be relatively small in the blocking area VA, however the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be reduced in the blocking area VA.

[0172] The following will refer to Fig.19 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig.19 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0173] Reference below Fig.19 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig.19 Omit.

[0174] The display device according to an exemplary embodiment of the present invention may include a fourth auxiliary pattern 403 disposed in the blocking area VA, and a fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be less than a third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA except the display area DA and the blocking area VA. A groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA, and the groove 90 may overlap with the fourth auxiliary pattern 403 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110).

[0175] The fourth auxiliary pattern 403 may include a first layer 403 a disposed between the first insulating layer 150 and the second insulating layer 152 , and a second layer 403 b overlapping the first layer 403 a and disposed on the second insulating layer 152 .

[0176] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0177] The groove 90 may overlap with the fourth auxiliary pattern 403 disposed in the blocking area VA, and the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be reduced, and the second thickness D2 of the groove 90 formed in the blocking area VA may be less than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA, so when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0178] In an exemplary embodiment of the present invention, the thickness of the first interlayer insulation layer 160 may be relatively small in the blocking area VA, however the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be reduced in the blocking area VA.

[0179] The following will refer to Fig. 20 A display device according to an exemplary embodiment of the present invention is described in more detail. Fig. 20 is a cross-sectional view of a portion of a display device according to an exemplary embodiment of the present invention.

[0180] Reference below Fig. 20 The display device described is similar to the display device described above (e.g., reference Figure 2 and Figure 3 ). Therefore, in contrast to the above (e.g., reference Figure 2 and Figure 3 ) The same or substantially the same repeated description of the components can be referred to below Fig. 20 Omit.

[0181] refer to Fig. 20 , the display device according to an exemplary embodiment of the present invention may include a fifth auxiliary pattern 404 disposed in the blocking area VA, and a fourth thickness D4 of the first interlayer insulating layer 160 disposed in the blocking area VA may be less than a third thickness D3 of the first interlayer insulating layer 160 disposed in the non-display area NDA except the display area DA and the blocking area VA. A groove 90 may be formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the blocking area VA, and the groove 90 may overlap with the fifth auxiliary pattern 404 disposed in the blocking area VA (e.g., in a direction orthogonal to the upper surface of the substrate 110).

[0182] The fifth auxiliary pattern 404 may be disposed on the second insulating layer 152. The fifth auxiliary pattern 404 may be formed substantially simultaneously with the data line 171, the driving voltage line 172, and the output member 173 of the display area DA and may include the same layers as the data line 171, the driving voltage line 172, and the output member 173 of the display area DA.

[0183] When the groove 90 is formed in the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the blocking area VA overlapping with the thin film encapsulation layer 80, moisture and air can be prevented from flowing into the display area DA covered by the thin film encapsulation layer 80 through the first interlayer insulating layer 160 and the second interlayer insulating layer 180 set in the non-display area NDA.

[0184] The groove 90 may overlap with the fifth auxiliary pattern 404 disposed in the blocking area VA, and the thickness of the first interlayer insulating layer 160 disposed in the blocking area VA may be reduced, and the second thickness D2 of the groove 90 formed in the blocking area VA may be less than the first thickness D1 of the first interlayer insulating layer 160 and the second interlayer insulating layer 180 disposed in the display area DA, so when the groove 90 is formed, the organic material may be prevented from remaining, and moisture and air may be prevented from flowing through the organic material remaining in the groove 90. For example, moisture or oxygen may not flow through the space formed under the groove 90. Therefore, the groove 90 may prevent moisture or oxygen from penetrating, for example, preventing moisture or oxygen from penetrating into the emission layer or signal line of the display device.

[0185] In an exemplary embodiment of the present invention, the thickness of the first interlayer insulation layer 160 may be relatively small in the blocking area VA, however the exemplary embodiment of the present invention is not limited thereto, and the thickness of at least one of the first interlayer insulation layer 160 and the second interlayer insulation layer 180 may be reduced in the blocking area VA.

[0186] While the present invention has been shown and described with reference to exemplary embodiments thereof, it will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims

1. A display device, comprising: a substrate, the substrate comprising a display area and a non-display area adjacent to the display area, wherein the non-display area comprises a blocking area; an organic layer disposed on the substrate; an emission layer disposed in the display region of the substrate; and a thin film encapsulation layer disposed on the substrate and overlapping the emission layer and the blocking region, wherein a first thickness of the organic layer disposed on the display area is greater than a second thickness of the organic layer disposed in the blocking area, The organic layer has a groove penetrating the entire thickness of the organic layer in the blocking region, wherein the step is arranged adjacent to both sides of the groove in the non-display area, wherein the height of the groove is smaller than the height of the portions of the organic layer adjacent to both sides of the groove, wherein the organic layer comprises a first organic layer and a second organic layer overlapping each other, The first organic layer has different thicknesses near the groove, and The second organic layers have the same thickness.

2. The display device according to claim 1, wherein: The thin film encapsulation layer includes a first inorganic encapsulation layer and a second inorganic encapsulation layer overlapping each other, and an organic encapsulation layer disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, The organic encapsulation layer substantially covers the display area and a portion of the non-display area, and The blocking region overlaps the organic encapsulation layer.

3. The display device according to claim 2, further comprising: an auxiliary pattern disposed in the blocking region of the non-display area, The auxiliary pattern overlaps the groove.

4. The display device according to claim 3, further comprising: A semiconductor layer disposed on the substrate; a first gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode; a storage electrode disposed on the second gate insulating layer; a first insulating layer disposed on the storage electrode; An input electrode and an output electrode disposed on the first insulating layer and connected to the semiconductor layer; a second insulating layer disposed on the input electrode and the output electrode; and A data line and a driving voltage line are disposed on the second insulating layer.

5. The display device according to claim 4, wherein: The auxiliary pattern includes the same material as the gate electrode.

6. The display device according to claim 4, wherein: The auxiliary pattern includes a first layer and a second layer overlapping each other, and the second gate insulating layer is disposed between the first layer and the second layer, The first layer comprises the same material as the gate electrode, and The second layer includes the same material as the storage electrode.

7. The display device according to claim 4, wherein: The auxiliary pattern is disposed on the first insulating layer, and The auxiliary pattern includes the same material as the input electrode and the output electrode.

8. The display device according to claim 4, wherein: The auxiliary pattern includes a first layer and a second layer overlapping each other, and the second insulating layer is disposed between the first layer and the second layer, The first layer comprises the same material as the input electrode and the output electrode, and The second layer includes the same material as the data line and the driving voltage line.

9. The display device according to claim 4, wherein: The auxiliary pattern includes the same material as the data line and the driving voltage line.

10. The display device according to claim 1, further comprising: A common voltage transmission line is provided in the non-display area, and The blocking area is disposed between the display area and the common voltage transmission line.

11. The display device according to claim 10, further comprising: A first spacer and a second spacer are disposed in the non-display area, The first spacer overlaps the common voltage transmission line, and The second spacer is separated further from the display area than the first spacer.

12. The display device according to claim 1, further comprising: a common electrode connected to the emitting layer; and The thin film encapsulation layer comprises a first inorganic encapsulation layer, The common electrode and the first inorganic encapsulation layer are continuously disposed in the groove.

13. A display device, comprising: a substrate, the substrate comprising a display area and a non-display area adjacent to the display area, wherein the non-display area comprises a blocking area; an organic layer disposed on the substrate; an emission layer disposed in the display region of the substrate; and a thin film encapsulation layer disposed on the substrate and overlapping the emission layer and the blocking region, wherein the organic layer has a groove penetrating the entire thickness of the organic layer in the barrier region, wherein the organic layer comprises a first organic layer and a second organic layer overlapping each other, and The thickness of the first organic layer near the groove is smaller than the thickness of the first organic layer in other regions.

14. The display device according to claim 13, wherein: The lower surface of the first organic layer is disposed on the same plane near the groove.

15. The display device according to claim 13, wherein: An upper surface of the first organic layer includes a step near the groove.

16. The display device according to claim 13, wherein: A lower surface of the second organic layer includes a step near the groove.

17. The display device according to claim 16, wherein: An upper surface of the second organic layer includes a step near the groove.

18. The display device according to claim 13, further comprising: an auxiliary pattern disposed in the blocking region of the non-display area, The auxiliary pattern overlaps the groove.

19. The display device according to claim 18, further comprising: A semiconductor layer disposed on the substrate; a first gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode; a storage electrode disposed on the second gate insulating layer; a first insulating layer disposed on the storage electrode; An input electrode and an output electrode disposed on the first insulating layer and connected to the semiconductor layer; a second insulating layer disposed on the input electrode and the output electrode; and A data line and a driving voltage line are disposed on the second insulating layer.

20. The display device according to claim 19, wherein The auxiliary pattern includes the same material as the gate electrode.

21. The display device according to claim 20, wherein: The auxiliary pattern includes a first layer and a second layer overlapping each other, and the second gate insulating layer is disposed between the first layer and the second layer, The first layer comprises the same material as the gate electrode, and The second layer includes the same material as the storage electrode.

22. The display device according to claim 20, wherein: The auxiliary pattern is disposed on the first insulating layer, and The auxiliary pattern includes the same material as the input electrode and the output electrode.

23. The display device according to claim 20, wherein: The auxiliary pattern includes a first layer and a second layer overlapping each other, and the second insulating layer is disposed between the first layer and the second layer, The first layer comprises the same material as the input electrode and the output electrode, and The second layer includes the same material as the data line and the driving voltage line.

24. The display device according to claim 20, wherein: The auxiliary pattern includes the same material as the data line and the driving voltage line.

25. The display device according to claim 13, further comprising: A common voltage transmission line is provided in the non-display area, and The blocking area is disposed between the display area and the common voltage transmission line.

26. The display device according to claim 25, further comprising: A first spacer and a second spacer are disposed in the non-display area, The first spacer overlaps the common voltage transmission line, and The second spacer is separated further from the display area than the first spacer.

Images