Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and the preparation method comprises the following steps: providing a prefabricated device which comprises a cathode and a metal layer which are stacked; a zinc oxide layer is arranged on the side, away from the cathode, of the metal layer; and forming an anode to obtain the photoelectric device, wherein the material of the metal layer comprises one or two of gold and platinum. The invention aims to prolong the service life of the photoelectric device.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Photoelectric devices refer to devices made based on the photoelectric effect, including light-emitting devices, photocells, photoelectric tubes, etc. Photoelectric devices usually include an anode, a cathode, and a functional layer disposed between the anode and the cathode, and the functional layer may include an electron transport layer, etc.

[0003] Zinc oxide has a high electron mobility and is one of the commonly used materials for electron transport layers. However, there are a large number of defects on the surface of zinc oxide nanoparticle films, and they are prone to oxidizing the cathode during long-term aging, affecting the service life of the device. Summary of the invention

[0004] In view of this, the present application provides an optoelectronic device, a method for preparing the same, and a display device, aiming to extend the service life of the optoelectronic device.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides a method for preparing a photoelectric device, comprising the following steps:

[0007] Providing a prefabricated device, the prefabricated device comprising a stacked cathode and a metal layer;

[0008] A zinc oxide layer is provided on a side of the metal layer facing away from the cathode; and

[0009] Disposing an anode on the side of the zinc oxide layer away from the metal layer to obtain the photoelectric device;

[0010] Wherein, the material of the zinc oxide layer includes zinc oxide or doped zinc oxide;

[0011] The material of the metal layer includes gold and / or platinum.

[0012] Optionally, in some embodiments of the present application, the step of providing a zinc oxide layer on a side of the metal layer away from the cathode includes:

[0013] Providing zinc oxide precursor;

[0014] In an oxygen-containing atmosphere, the zinc oxide precursor is disposed on a side of the metal layer away from the cathode by chemical vapor deposition to form a thin film, and then the thin film is scanned with an electron beam to obtain a zinc oxide layer.

[0015] Optionally, in some embodiments of the present application, the zinc oxide precursor includes zinc powder; and / or,

[0016] The oxygen-containing atmosphere includes one or more of oxygen, ozone, and nitrogen dioxide; and / or,

[0017] In the oxygen-containing atmosphere, the air pressure is less than or equal to 1×10 -6 mbar.

[0018] Optionally, in some embodiments of the present application, the voltage of the electron beam is 400-500V; and / or,

[0019] The current of the electron beam is 1.4-1.8 mA.

[0020] Optionally, in some embodiments of the present application, after the step of disposing the zinc oxide layer on the side of the metal layer facing away from the cathode, it further includes:

[0021] Immerse the zinc oxide layer in a first solvent, take it out after standing still, and perform a first annealing treatment;

[0022] Wherein, the first solvent includes one or more of methanolamine, ethanolamine, 2-N-dibutylaminoethanol, and N,N-diethylethanolamine.

[0023] Optionally, in some embodiments of the present application, the standing time is 30-60 min; and / or,

[0024] The temperature of the first annealing treatment is 200-250 °C; and / or,

[0025] The time of the first annealing treatment is 15-20 min.

[0026] Optionally, in some embodiments of the present application, the thickness of the metal layer is less than or equal to 5 nm; and / or,

[0027] The doped zinc oxide includes a compound with the chemical formula Zn x M 1-x O, wherein M includes one or more of Al, Mg, Li, In, Ga, Cd, Cs, and Cu, and 0 < x < 1; and / or,

[0028] After the step of providing the prefabricated device and before the step of disposing the zinc oxide layer on the side of the metal layer facing away from the cathode, it further includes: bombarding the side of the metal layer facing away from the cathode with an Ar + ion beam, and then performing a second annealing treatment on the metal layer.

[0029] Optionally, in some embodiments of the present application, the step of performing a second annealing treatment on the metal layer includes: performing a first annealing on the metal layer at 800-1000K, the first annealing time is 5-10 minutes, and then performing a second annealing on the metal layer at 500-600K, the second annealing time is greater than or equal to 2 hours.

[0030] Optionally, in some embodiments of the present application, after the step of providing a zinc oxide layer on a side of the metal layer away from the cathode and before the step of forming an anode, the method further includes:

[0031] A functional layer is formed, wherein the functional layer includes at least one of a light-emitting layer and a hole functional layer, and the hole functional layer includes one or both of a hole transport layer and a hole injection layer.

[0032] In a second aspect, the present application also proposes a photoelectric device, comprising a stacked cathode, a metal layer, a zinc oxide layer and an anode, wherein the material of the metal layer comprises one or both of gold and platinum, the material of the zinc oxide layer comprises zinc oxide or doped zinc oxide, and the zinc oxide layer is a two-dimensional nanostructure.

[0033] Optionally, in some embodiments of the present application, the thickness of the metal layer is less than or equal to 5 nm; and / or,

[0034] The cathode and the anode are independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0035] Optionally, in some embodiments of the present application, the optoelectronic device further includes a light-emitting layer disposed between the zinc oxide layer and the anode, and the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, One or more of TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, thermally activated delayed material, polymer containing BN covalent bond, hybrid localized charge transfer excited state material, and exciplex luminescent material, the quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are selected from II-VI group compounds, IV-VI group compounds, III-V group compounds, respectively. and at least one of a I-III-VI group compound; the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS , CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of; and / or,

[0036] The photoelectric device further comprises a hole functional layer disposed between the zinc oxide layer and the anode, wherein the hole functional layer comprises one or two layers of a hole transport layer and a hole injection layer, and the material of the hole transport layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)- triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] ,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped W O3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; the material of the hole injection layer is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0037] In a third aspect, the present application further proposes a display device, comprising the optoelectronic device as described above, or the optoelectronic device manufactured by the manufacturing method described above.

[0038] In the present application, a metal layer is prepared on the cathode. By providing a zinc oxide layer on the metal layer, it helps to improve the electron mobility and conductivity of the zinc oxide layer, help to extend the life of the device and improve its electrical performance; in addition, the metal layer can protect the cathode and help to increase the life of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0040] Figure 1 It is a schematic flow chart of a method for preparing a photoelectric device proposed in one embodiment of the present application;

[0041] Figure 2 is a schematic structural diagram of an optoelectronic device proposed in one embodiment of the present application;

[0042] Figure 3 is an AFM image of the ZnO electron transport layer prepared in Example 8;

[0043] Figure 4 is an AFM image of the ZnO electron transport layer prepared in Comparative Example 1;

[0044] Figure 5 is an AFM image of the ZnO electron transport layer prepared in Comparative Example 2;

[0045] Reference numerals:

[0046] 100 - photoelectric device; 10 - cathode; 20 - metal layer; 30 - zinc oxide layer; 40 - light-emitting layer; 50 - hole transport layer; 60 - hole injection layer; 70 - anode. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0048] In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the specification of this application, the term "including" means "including but not limited to".

[0049] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0050] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0051] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0052] The present application embodiment provides an optoelectronic device 100, which may be an organic light emitting diode (OLED), a quantum dot light emitting diode (QLED), a solar cell, etc. Figure 2The photoelectric device 100 includes a stacked cathode 10, a metal layer 20, a zinc oxide layer 30 and an anode 70, wherein the material of the metal layer 20 includes one or both of gold and platinum, and the material of the zinc oxide layer 30 includes zinc oxide or doped zinc oxide, and its morphology is a two-dimensional nanostructure. Figure 3 As shown, the zinc oxide layer 30 is formed into a thin film with a two-dimensional nanostructure, and its microscopic morphology is a two-dimensional honeycomb similar to a graphene structure. The zinc oxide layer 30 has high electron mobility and conductivity, and fewer surface defects, which helps to extend the service life and luminescence performance of the device; in addition, the metal layer 20 is arranged between the zinc oxide layer 30 and the cathode 10, which is not easy to oxidize, and helps to prevent the oxygen in the zinc oxide layer 30 from reacting with the cathode 10 during the long-term aging stage, plays a role in protecting the cathode 10, and helps to improve the stability of the device and extend the life of the device.

[0053] The zinc oxide layer 30 has a first surface and a second surface arranged opposite to each other in the thickness direction of the device, and a side surface connecting the first surface and the second surface, and there are dangling bonds on the side surface, that is, surface defects. The dangling bonds are chemical bonds. Generally, the crystal suddenly terminates at the surface due to the lattice. Each atom in the outermost layer of the surface will have an unpaired electron, that is, there is an unsaturated bond. This bond is called a dangling bond. For example, there may be zinc ion dangling bonds on the side surface of the zinc oxide layer 30. The presence of the dangling bonds easily causes the adsorption of oxygen atoms, affects the stability of the device, and causes the device to age rapidly. In some embodiments, a ligand is connected to the side surface of the zinc oxide layer 30, and the raw materials of the ligand include one or more of methanolamine, ethanolamine, 2-N-dibutylaminoethanol, and N,N-diethylethanolamine. The ligand is coordinated with the dangling bonds on the side surface of the zinc oxide layer 30, which can play a role in passivating defects and improve the phenomenon of rapid aging of the device due to water and oxygen infiltration. In some embodiments, the thickness of the zinc oxide layer 30 is 10 to 20 nm.

[0054] In some embodiments, the doped zinc oxide refers to zinc oxide doped with a doping element, and its chemical formula is Zn x M 1-x O, wherein M is a doping element, including but not limited to one or more of Al, Mg, Li, In, Ga, Cd, Cs, and Cu, 0 <x<1。

[0055] In some embodiments, the thickness of the metal layer 20 is less than or equal to 5 nm; for example, it can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, a value between any two values ​​listed above, and a value less than 1 nm. In other embodiments, the thickness of the metal layer 20 is 3 to 5 nm. In this way, a single-layer dense and light-transmitting thin film can be formed, which is conducive to the formation of a two-dimensional zinc oxide film and ensures the luminescence performance of the device.

[0056] In some embodiments, the anode 70 may be a conventional anode 70 in the art. For example, it may be selected from, but not limited to, a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba. In some embodiments, the thickness of the anode 70 is 50-150 nm.

[0057] In some embodiments, the cathode 10 may be a conventional cathode 10 in the art. For example, it may be selected from, but not limited to, a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, and the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba. In some embodiments, the thickness of the cathode 10 is 13-15 nm.

[0058] In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 40 disposed between the anode 70 and the zinc oxide layer 30, and the light-emitting layer 40 may be an organic light-emitting layer or a quantum dot light-emitting layer. When the light-emitting layer 40 is an organic light-emitting layer, the optoelectronic device 100 may be an organic light-emitting device; when the light-emitting layer 40 is a quantum dot light-emitting layer, the optoelectronic device 100 may be a quantum dot light-emitting device. In some embodiments, the thickness of the light-emitting layer 40 is 30 to 50 nm.

[0059] The material of the organic light-emitting layer is a light-emitting material known in the art for the organic light-emitting layer of the optoelectronic device 100, for example, it can be selected from but not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, and exciplex light-emitting materials. One or more.

[0060] The material of the quantum dot light-emitting layer is a quantum dot light-emitting material known in the art for the quantum dot light-emitting layer of the optoelectronic device 100, for example, it can be selected from but not limited to at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds; the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, Zn O, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgT e. At least one of HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group The compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0061] As an example, the core-shell structured quantum dots may be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnSCdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0062] It should be noted that, for the material of the aforementioned single structure quantum dot, or the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0063] The perovskite semiconductor material may be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

[0064] In some embodiments, the optoelectronic device 100 further includes a hole functional layer disposed between the anode 70 and the zinc oxide layer 30. It should be noted that when the device further includes a light-emitting layer 40, the hole functional layer is disposed between the light-emitting layer 40 and the anode 70. The hole functional layer includes one or two layers of a hole transport layer 50 and a hole injection layer 60. When the device includes both a hole transport layer 50 and a hole injection layer 60, the hole injection layer 60 is disposed closer to the anode 70. The hole transport layer 50 can be prepared using a material having hole transport properties known in the art for use in optoelectronic devices 100.For example, the material of the hole transport layer 50 is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3- methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO At least one; the material of the hole injection layer 60 is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide. In some embodiments, the thickness of the hole injection layer 60 is 70 to 100 nm, and the thickness of the hole transport layer 50 is 20 to 70 nm.

[0065] It is understandable that the optoelectronic device 100 may also be provided with some conventional film layers used in optoelectronic devices 100 to help improve the performance of the optoelectronic device 100, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc.

[0066] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the actual requirements of the optoelectronic device 100 .

[0067] In addition, the present application also provides a method for preparing the optoelectronic device 100. Figure 1 , the preparation method comprises the following steps:

[0068] S10, providing a prefabricated device, wherein the prefabricated device includes a stacked cathode 10 and a metal layer 20;

[0069] S20, disposing a zinc oxide layer 30 on a side of the metal layer 20 away from the cathode 10; and

[0070] S30, disposing an anode 70 on a side of the zinc oxide layer 30 away from the metal layer 20 to obtain a photoelectric device 100;

[0071] The material of the zinc oxide layer 30 includes zinc oxide or doped zinc oxide, and the material of the metal layer 20 includes one or both of gold and platinum.

[0072] In the present application, a metal layer 20 is prepared on the cathode 10. When the metal layer 20 is used as a substrate and a zinc oxide layer 30 is arranged thereon, a zinc oxide layer 30 with a two-dimensional structure can be prepared, thereby achieving effective regulation of the microscopic morphology of the two-dimensional structure zinc oxide film, helping to improve the electron mobility and conductivity of the zinc oxide layer 30, reducing its surface defects, helping to extend the life of the device, and improving its electrical properties; in addition, the metal layer 20 is not easily oxidized, and the oxygen in the zinc oxide layer 30 can be prevented from reacting with the cathode 10 during the long-term aging stage, thereby protecting the cathode 10, helping to improve the stability of the device, and extending the life of the device.

[0073] In some embodiments, step S20 may be implemented as follows:

[0074] S21, providing a zinc oxide precursor;

[0075] S22 , in an oxygen-containing atmosphere, deposit the zinc oxide precursor on the side of the metal layer 20 away from the cathode 10 by chemical vapor deposition to form a thin film, and then scan the thin film with an electron beam to obtain a zinc oxide layer 30 .

[0076] In some embodiments, the zinc oxide precursor includes zinc powder.

[0077] In some embodiments, the oxygen-containing atmosphere includes one or more of oxygen, ozone, and nitrogen dioxide; in other embodiments, the oxygen-containing atmosphere is nitrogen dioxide (NO 2 ), which helps to improve the stability of the zinc oxide layer 30 .

[0078] In some embodiments, the oxygen-containing atmosphere has a pressure less than or equal to 1×10 -6 mbar, within this range, it is helpful to accurately control the oxidation degree of zinc powder during the vapor deposition process to ensure its complete oxidation and form a dense graphene-like ZnO monolayer film.

[0079] In some embodiments, the voltage of the electron beam is 400-500 V; for example, it can be 400 V, 410 V, 420 V, 430 V, 450 V, 460 V, 480 V, 490 V, 500 V, and values ​​between any two of the above values.

[0080] In some embodiments, the current of the electron beam is 1.4-1.8 mA; for example, it can be 1.4 mA, 1.5 mA, 1.6 mA, 1.7 mA, 1.8 mA, and a value between any two of the above values.

[0081] In some embodiments, after step S20 and before step S30, it also includes: immersing the zinc oxide layer 30 in a first solvent, taking it out after standing, and performing a first annealing treatment; wherein the first solvent includes one or more of methanolamine, ethanolamine, 2-N-dibutylaminoethanol, and N,N-diethylethanolamine. By immersing the zinc oxide layer 30 in the first solvent, ligand modification of the dangling bonds on the side surface of the zinc oxide layer 30 can be achieved, which helps to further improve the stability of the device. In specific implementation, the semi-finished device made in step S20 can be immersed in the first solvent, or the zinc oxide layer 30 can be facing the first solvent, and then only the zinc oxide layer 30 is immersed in the first solvent. The immersion step can be carried out at 15 to 40°C.

[0082] In some embodiments, the standing time is 30 to 60 minutes; for example, it can be 30 minutes, 40 minutes, 50 minutes, 60 minutes, and values ​​between any two of the above values, which helps to ensure that the dangling bonds on the side surface are fully in contact with the solvent.

[0083] In some embodiments, the temperature of the first annealing treatment is 200-250°C; for example, it can be 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, and values ​​between any two of the above values. The time of the first annealing treatment is 15-20 minutes; for example, it can be 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes, 20 minutes, and values ​​between any two of the above values. In this way, it helps to ensure that the side surface dangling bonds are fully coordinated with the solvent molecules, and effectively achieve coordination modification.

[0084] In some embodiments, the thickness of the metal layer 20 is less than or equal to 5 nm; for example, it can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, a value between any two values ​​listed above, and a value less than 1 nm. In other embodiments, the thickness of the metal layer 20 is 3 to 5 nm. In this way, a single-layer dense and light-transmitting thin film can be formed, providing better substrate conditions for forming a two-dimensional zinc oxide film, and at the same time, helping to ensure the luminescence performance of the device.

[0085] In some embodiments, after step S10 and before step S20, the method further includes: using Ar + The ion flow bombards the side of the metal layer 20 away from the cathode 10, and then the metal layer 20 is subjected to a second annealing treatment. The surface treatment of the metal layer 20 is helpful to form a dense two-dimensional zinc oxide film.

[0086] In some embodiments, the step of performing a second annealing treatment on the metal layer 20 includes: performing a first annealing on the metal layer 20 at 800-1000K (Kelvin), the first annealing time is 5-10 minutes, and then performing a second annealing on the metal layer 20 at 500-600K (Kelvin), the second annealing time is greater than or equal to 2 hours.

[0087] It can be understood that when the optoelectronic device 100 further includes functional film layers such as the light-emitting layer 40 and the hole transport layer 50, after step S20 and before step S30, it also includes forming a functional layer, the functional layer includes at least one of the light-emitting layer 40 and the hole functional layer, and the hole functional layer includes one or two of the hole transport layer 50 and the hole injection layer 60. In specific implementation, one or more functional film layers can be prepared in sequence according to the film layer design sequence of the optoelectronic device 100.

[0088] In actual preparation, each film layer of the optoelectronic device 100, such as the light-emitting layer 40, the hole functional layer, the cathode 10 and the anode 70, can be prepared by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical plating and solution method, among which the physical plating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, and strip coating, etc.

[0089] In some embodiments, after step S30, the step of packaging the optoelectronic device 100 is further included. The packaging process can be performed by a common machine packaging or by manual packaging. Preferably, in the packaging process environment, the oxygen content and the water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device 100.

[0090] In a third aspect, the present application further proposes a display device, which may be a smart phone, a portable phone, a tablet computer, a personal digital assistant (PDA), a portable multimedia player (Portable Multimedia Player), a television, a game console, a watch-type electronic device, a head-mounted display, a display of a personal computer, a notebook computer, a car navigation system, a car dashboard, a digital camera, a portable camera, an external advertising board, an electro-optical board, a medical device, a detection device, a refrigerator, a washing machine, etc. The display device includes the optoelectronic device 100 as described above.

[0091] The technical scheme and technical effects of the present application are described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0092] Example 1

[0093] Preparation of inverted structure quantum dot light-emitting diode devices:

[0094] (1) Providing an ITO substrate coated with a 5 nm Au layer; Ar + The samples were magnetron sputtered for 10 mins, then annealed at 800 K for 10 mins and then annealed at 500 K for 2 hrs.

[0095] (2) Place the film obtained in step (1) on a 3×10 -7 In a NO2 atmosphere of mbar, Zn powder is used for vapor phase oxidation deposition to form a thin film, and then the thin film is scanned by an electron beam to control the formation of a single-layer graphene-like zinc oxide layer with a single layer thickness of about 10nm. The voltage is about 400V and the current is about 1.5mA;

[0096] (3) transferring the wafer obtained in step (1) to a nitrogen environment and immersing it in an ethanolamine solution for 60 minutes, taking it out, and annealing it at 220° C. for 20 minutes to obtain a ZnO electron transport layer;

[0097] (4) Spin-coat a 50 nm PbS@CdS quantum dot light-emitting layer on the electron transport layer and anneal at 120 °C for 15 mins;

[0098] (5) evaporating a 20 nm thick NPB hole transport layer on the quantum dot light-emitting layer;

[0099] (6) Vapor depositing a 80 nm MoO3 hole injection layer on the hole transport layer;

[0100] (7) Evaporating a 100 nm Al electrode on the hole injection layer;

[0101] (8) After packaging, an inverted structure quantum dot light emitting diode device is obtained.

[0102] Example 2

[0103] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, in step (1), the thickness of the Au layer on the ITO is 3 nm, and the other steps and parameters remain unchanged.

[0104] Example 3

[0105] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment, in step (1), the thickness of the Au layer on the ITO is 10 nm, and the other steps and parameters remain unchanged.

[0106] Example 4

[0107] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, in step (2), the pressure of the NO2 atmosphere is 1×10 -6 mbar, and the rest of the steps and parameters remain unchanged.

[0108] Example 5

[0109] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, in step (2), the pressure of the NO2 atmosphere is 1.5×10 -6 mbar, and the rest of the steps and parameters remain unchanged.

[0110] Example 6

[0111] The scheme of this embodiment is basically the same as that of embodiment 1, except that, in this embodiment, step (3) is omitted, and the light-emitting layer is directly spin-coated on the electron transport layer that has not been modified by the ligand, and the other steps and parameters remain unchanged.

[0112] Example 7

[0113] The solution of this embodiment is basically the same as that of Embodiment 1, with the only difference being that, in this embodiment, the Au layer on the ITO is replaced by a Pt layer.

[0114] Example 8

[0115] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, in step (1), the step of "arizing the Au-plated layer in air at 25°C" is omitted. + The Au layer is magnetron sputtered for 10 mins, then annealed at 800 K for 10 mins, and then annealed at 500 K for 2 hrs”; step (2) ZnO is deposited directly on the Au layer.

[0116] Comparative Example 1

[0117] The scheme of this comparative example is basically the same as that of Example 1, except that in this comparative example, in step (1), the Au layer is changed to an Al layer, and the other steps and parameters remain unchanged.

[0118] Comparative Example 2

[0119] The scheme of this comparative example is basically the same as that of Example 1, except that in this comparative example, in step (2), a non-gas phase oxidation deposition method is adopted to deposit a zero-dimensional commercial zinc oxide solution on the Au layer by spin coating. Accordingly, step (2) is changed to:

[0120] A ZnO ethanol solution was spin-coated on the surface of the Au layer after surface treatment, and annealed at 200° C. for 30 mins to form a ZnO electron transport layer with a thickness of 10 nm. The other steps and parameters remained unchanged.

[0121] Experimental example

[0122] (i) The ZnO electron transport layers prepared in Example 8, Comparative Example 1 and Comparative Example 2 were observed using an atomic force microscope. The results are as follows: Figures 3 to 5 shown.

[0123] As can be seen from the figure, Figure 3 The film is a two-dimensional nanostructure with lamellar and honeycomb shapes. Figure 4 The film appears as a film with an extremely uneven surface. Figure 5 The film is a nanoparticle film formed by stacking nanoparticles. Obviously, by using the Au layer as the substrate and adopting electron beam-assisted vapor phase oxidation deposition to form the film, the microscopic morphology of the film can be controlled to form a dense, flat, graphene-like two-dimensional nanofilm.

[0124] (ii) The devices prepared in the above device embodiments and device comparative examples were tested.

[0125] Life test refers to the time taken for the device brightness to decay to a certain percentage of the maximum brightness under 2mA constant current drive. The time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life is the measured life. In order to shorten the life test cycle, the device life test is usually carried out at high brightness by accelerating device aging, and the life at low brightness is obtained by fitting the decay fitting formula. For example, the life at 1000nits is recorded as T95 1000nits, and the calculation formula is:

[0126]

[0127] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally it is 1000nits, A is the acceleration factor, which is 1.7.

[0128] The detection method of external quantum efficiency EQE is: the ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, the unit is %, which is an important parameter to measure the quality of electrophotoelectric devices. It can be obtained by measuring with EQE optical testing instruments. Among them, the voltage when the brightness of the device reaches 1nite is the turn-on voltage. The specific calculation formula is as follows:

[0129]

[0130] Among them, η e is the light output coupling efficiency, η γ is the ratio of the number of recombined carriers to the number of injected carriers, x is the ratio of the number of excitons that generate photons to the total number of excitons, K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0131] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0132] The current efficiency (CE) was measured by a Keithley 2400 high-precision digital source meter.

[0133] Table 1

[0134]

[0135] It can be seen from the above table that Examples 1 to 8 have lower CE change rates and brightness change rates than Comparative Example 2, and Example 1 has higher CE than Comparative Example 2; indicating that, compared with the traditional solution method for preparing the ZnO layer, the method of depositing the ZnO layer using the Au layer as a substrate is helpful to improve the stability of the device and extend its service life. The reason may be that the film prepared by the traditional solution method is a nanoparticle film, which does not have the high transmission characteristics and stability of the two-dimensional film, and the surface is very easy to adsorb water and oxygen, so the stability and conductive characteristics are significantly compromised compared with the examples;

[0136] Compared with Comparative Example 1, Example 1 has lower CE change rate and brightness change rate, but the initial CE is relatively low. This may be because the Al layer is used as a deposition substrate, and the ZnO film formed has poor flatness, and the Al layer is also oxidized during the oxidation of Zn by high-pressure NO2, resulting in the formation of an energy level gradient, which enhances the initial electrical properties of the device, but greatly affects the stability.

[0137] The optoelectronic devices, preparation methods and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: The following steps are involved: Providing a prefabricated device, the prefabricated device comprising a stacked cathode and a metal layer; A zinc oxide layer is provided on a side of the metal layer facing away from the cathode; and Disposing an anode on the side of the zinc oxide layer away from the metal layer to obtain the photoelectric device; Wherein, the material of the zinc oxide layer includes zinc oxide or doped zinc oxide; The material of the metal layer includes gold and / or platinum.

2. The preparation method according to claim 1, characterized in that: The step of providing a zinc oxide layer on a side of the metal layer away from the cathode comprises: Providing zinc oxide precursor; In an oxygen-containing atmosphere, the zinc oxide precursor is disposed on a side of the metal layer away from the cathode by chemical vapor deposition to form a thin film, and then the thin film is scanned with an electron beam to obtain a zinc oxide layer.

3. The preparation method according to claim 2, characterized in that: The zinc oxide precursor comprises zinc powder; and / or, The oxygen-containing atmosphere includes one or more of oxygen, ozone, and nitrogen dioxide; and / or, The oxygen-containing atmosphere has a pressure less than or equal to 1×10 -6 mbar; and / or, The voltage of the electron beam is 400-500V; and / or, The current of the electron beam is 1.4-1.8 mA.

4. The preparation method according to claim 1, characterized in that: After the step of providing a zinc oxide layer on a side of the metal layer away from the cathode, the method further comprises: The zinc oxide layer is immersed in a first solvent, allowed to stand for a while before being taken out and subjected to a first annealing treatment; Wherein, the first solvent includes one or more of methanolamine, ethanolamine, 2-N-dibutylaminoethanol, and N,N-diethylethanolamine.

5. The preparation method according to claim 4, characterized in that: The standing time is 30 to 60 minutes; and / or, The temperature of the first annealing treatment is 200-250° C.; and / or, The first annealing treatment takes 15 to 20 minutes.

6. The preparation method according to claim 1, characterized in that: The thickness of the metal layer is less than or equal to 5 nm; and / or, The doped zinc oxide includes a compound with the chemical formula Zn x M 1-x O, where M includes one or more of Al, Mg, Li, In, Ga, Cd, Cs, Cu, and 0 < x < 1; and / or, After the step of providing the prefabricated device, and before the step of providing the zinc oxide layer on the side of the metal layer away from the cathode, the method further includes: + The ion flow bombards the side of the metal layer facing away from the cathode, and then the metal layer is subjected to a second annealing treatment.

7. The preparation method according to claim 6, characterized in that: The step of performing a second annealing treatment on the metal layer includes: performing a first annealing on the metal layer at 800-1000K, the first annealing time is 5-10 minutes, and then performing a second annealing on the metal layer at 500-600K, the second annealing time is greater than or equal to 2 hours.

8. A photoelectric device, characterized in that: It comprises a stacked cathode, a metal layer, a zinc oxide layer and an anode, wherein the material of the metal layer comprises one or both of gold and platinum, the material of the zinc oxide layer comprises zinc oxide or doped zinc oxide, and the zinc oxide layer is a two-dimensional nanostructure.

9. The optoelectronic device according to claim 8, characterized in that: The thickness of the metal layer is less than or equal to 5 nm; and / or, The cathode and the anode are independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode; the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide; the composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS; the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba; and / or, The photoelectric device also includes a light-emitting layer disposed between the zinc oxide layer and the anode, wherein the material of the light-emitting layer includes one or more organic light-emitting materials and quantum dot light-emitting materials, wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBR b fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, thermally activated delayed material, polymer containing BN covalent bond, hybrid localized charge transfer excited state material, exciplex luminescent material or more, the quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are selected from II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-V At least one of the Group I compounds; the Group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZ At least one of nSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2 + 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of; and / or, The photoelectric device further comprises a hole functional layer disposed between the zinc oxide layer and the anode, wherein the hole functional layer comprises one or two layers of a hole transport layer and a hole injection layer, and the material of the hole transport layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)- triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] ,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped W O3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; the material of the hole injection layer is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

10. A display device, characterized in that: The invention comprises the optoelectronic device as claimed in claim 8 or 9, or the optoelectronic device prepared by the preparation method according to any one of claims 1 to 7.

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