Electrically-driven chiral light emitting device

Abstract

The invention relates to the technical field of chiral light sources, and discloses an electrically-driven chiral light emitting device which comprises a light emitting unit and a polarization piece, the light emitting unit comprises an energy supply assembly and a light emitting layer, the light emitting layer releases photons to emit light after obtaining energy, and the energy supply assembly is driven by electric energy and provides energy for electrons in the light emitting layer; the light emitted by the light-emitting layer is polarized into chiral light by the polarization piece, and the light-emitting wavelength of the light-emitting layer is matched with the chiral peak of the polarization piece; the polarization piece has a strongest chiral area, and photons released by the light-emitting layer only escape from the strongest chiral area, so that the light-emitting device capable of emitting chiral light with a simple structure is obtained, and the problem that a chiral light source cannot be integrated and miniaturized due to limitation of a light-emitting principle and used materials is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of chiral light sources, and in particular to an electrically driven chiral light emitting device. Background Art

[0002] Chiral light sources, also called circularly polarized light sources, are widely used in many fields;

[0003] There are many disadvantages in the current methods of generating chiral light. For example, when generating chiral light through polarizers and wave plates, other devices need to be added to the optical path. Due to the size of these devices, the light source equipment that emits chiral light based on this principle is difficult to miniaturize and integrate.

[0004] Due to the requirements of the luminescence principle of this type of chiral light source, the corresponding position of the equipment needs to use complex electromagnetic simulation and algorithm optimization for super surface processing, but because the structural unit length of the super surface usually needs to reach the sub-wavelength level, any processing error will lead to a decline in the performance of the equipment, which makes the processing of the light source equipment difficult; at the same time, due to the interaction between metal electrons and light waves on the super surface of the metal structure of this type of equipment, this phenomenon will cause electromagnetic energy loss, thereby reducing the luminous power of this type of chiral light source; and from the perspective of the materials used in the light source device, the perovskite material used in this type of device is very sensitive to the working environment. When working in an environment similar to high temperature and humidity, the material itself will decompose and ions will migrate, resulting in a decline in device performance. Summary of the invention

[0005] The purpose of the present invention is to provide an electrically driven chiral light emitting device, which solves the problem that the chiral light source cannot be integrated and miniaturized due to the limitations of the light emitting principle and the materials used.

[0006] To achieve the above object, the technical solution of the present invention is as follows: an electrically driven chiral light emitting device, the light emitting device comprising:

[0007] A light-emitting unit, the light-emitting unit comprising a light-emitting layer and an energy supply component, the light-emitting layer releases photons to emit light after obtaining energy, and the energy supply component is driven by electrical energy and provides energy for electrons in the light-emitting layer;

[0008] A polarizer, wherein the polarizer is a chiral material, and the polarizer polarizes the light emitted by the light-emitting layer into chiral light, and the emission wavelength of the light-emitting layer matches the chiral peak of the polarizer;

[0009] The polarizer has a region with the strongest chirality, and the photons released by the light-emitting layer escape only from the region with the strongest chirality.

[0010] As an optional solution, the energy supply component includes a direction guiding layer, an electron moving layer and a power source;

[0011] The center line of the direction guiding layer, the center line of the electron moving layer, the center line of the light emitting layer and the center line of the region with the strongest chirality are the same straight line and the straight line is the guiding straight line;

[0012] The region with the strongest chirality, the directional guiding layer, the light-emitting layer and the electron moving layer are sequentially arranged along the direction of the guiding straight line, and there is an overlapping region among the directional guiding layer, the light-emitting layer and the electron moving layer along the direction of the guiding straight line;

[0013] The power source causes the electrons in the electron moving layer to flow toward the direction guiding layer;

[0014] Among the electrons in the electron moving layer, the electrons that are affected by the power supply voltage and flow to the direction guiding layer are energy-releasing electrons. When flowing to the direction guiding layer, the energy-releasing electrons enter the light-emitting layer. After flowing to the light-emitting layer, the energy-releasing electrons release energy. The photons that obtain energy in the light-emitting layer move along the flow direction of the energy-releasing electrons and escape from the area with the strongest chirality.

[0015] As an optional solution, the electron moving layer is in a pointed cone or strip shape;

[0016] When the electron moving layer is in a pointed cone shape, the cone head of the electron moving layer faces the region with the strongest chirality;

[0017] When the electron moving layer is in a strip shape, energy-releasing electrons exist in a portion of the electron moving layer that overlaps with the region with the strongest chirality along the guiding straight line direction.

[0018] As an optional solution, the direction guiding layer is a positive material layer, the electron moving layer is a negative material layer, and the light emitting layer is a light emitting material region;

[0019] An energy supply electric field is formed between the positive material layer and the negative material layer under the action of the power supply voltage, the positive material layer is the positive electrode, and the negative material layer is the negative electrode;

[0020] The coverage of the energy supply electric field coincides with the region with the strongest chirality;

[0021] The light-emitting material region and the region with the strongest chirality have an overlapping region.

[0022] As an optional solution, an insulating layer is further provided between the positive material layer and the negative material layer;

[0023] The insulating layer is located on the path of electrons in the negative material layer moving toward the positive material layer, and the thickness of the insulating layer is smaller than the tunneling distance of electrons in the negative material layer;

[0024] The electrons in the negatively charged material layer pass through the insulating layer through quantum tunneling and enter the light-emitting material region to release energy, and the light-emitting material region emits light.

[0025] As an optional solution, a plurality of first fixing members are provided between the negative material layer and the insulating layer;

[0026] One end of the first fixing member is fixedly connected to the negative material layer, and the other end of the first fixing member is fixedly connected to the insulating layer. At this time, the distance between the negative material layer and the insulating layer is smaller than the tunneling distance of electrons in the negative material layer.

[0027] As an optional solution, the direction guiding layer is a P-type region material layer, the electron moving layer is an N-type region material layer, and the light emitting layer is an N-type material light emitting region;

[0028] The P-type region material is connected to the negative electrode of the power supply, and the N-type region material is connected to the positive electrode of the power supply;

[0029] The upper end surface of the N-type material light-emitting area is in contact with the P-type area material layer, and the lower end surface of the N-type material light-emitting area is in contact with the N-type area material layer;

[0030] The P-type region material layer and the N-type region material layer enable the N-type material light-emitting region to emit light under the action of a power supply voltage.

[0031] As an optional solution, the bandgap width of the N-type region material layer is greater than the bandgap width of the N-type material light-emitting region.

[0032] As an optional solution, a second fixing member is provided between the N-type region material layer and the N-type material light-emitting region;

[0033] One end of the second fixing member is fixedly connected to the N-type region material layer, and the other end of the second fixing member is fixedly connected to the N-type material light emitting region.

[0034] As an optional solution, the structure of the polarizer is a mirror-asymmetric chiral structure.

[0035] An electrically driven chiral light emitting device of the present invention has the following beneficial effects compared with the prior art: the light emitting unit of the embodiment of the present invention includes a light emitting layer for emitting light and an energy supply component for providing energy for the light emitting layer to emit light; since the photons released by the light emitting layer escape only from the region with the strongest chirality, the polarizer can polarize the light emitted by the light emitting layer into chiral light, thereby reducing the equipment parts that make up the chiral light source, and solving the problem that the chiral light source cannot be integrated and miniaturized due to the limitations of the light emitting principle and the materials used. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1is a front view of an embodiment of the present invention in which the negative electric material layer is in a pointed cone shape;

[0037] Figure 2 is a front view of an embodiment of the present invention in which the negative electric material layer is in a strip shape;

[0038] Figure 3 is a top view of a case where the negative material layer of an embodiment of the present invention is in a strip shape;

[0039] Figure 4 is a front view of an embodiment of the present invention when the N-type region material layer is in a pointed cone shape;

[0040] Figure 5 is a front view of an embodiment of the present invention when the N-type region material layer is in a strip shape;

[0041] Figure 6 is a top view of an embodiment of the present invention when the N-type region material layer is in a strip shape;

[0042] Figure 7 is a schematic diagram of a polarizing element according to an embodiment of the present invention;

[0043] In the figure, 1, polarizing element; 101, the area with the strongest chirality; 2, energy supply component; 201, direction guiding layer; 2011a, positive material layer; 2011b, P-type region material layer; 202, electron moving layer; 2021a, negative material layer; 2021b, N-type region material layer; 2031a, first fixing element; 2031b, second fixing element; 2041a, insulating layer; 3, light-emitting layer; 301a, light-emitting material region; 301b, N-type material light-emitting region; 4, light-emitting unit. DETAILED DESCRIPTION

[0044] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0045] In the description of the present invention, it should be noted that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0046] In the description of the present invention, it should be understood that the terms "connected", "connected", "fixed" and the like used in the present invention should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or a welding connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] like Figures 1 to 6 As shown, a preferred embodiment of the present invention provides an electrically driven chiral light emitting device, which includes a light emitting unit 4 and a polarizer 1.

[0048] The light-emitting unit 4 includes a light-emitting layer 3 and an energy supply component 2. The electrons in the light-emitting layer 3 emit light after obtaining energy. The light-emitting layer 3 is a strip-shaped light-emitting material. The electrons in the strip-shaped light-emitting material can emit light after obtaining external energy.

[0049] The energy supply component 2 is driven by electric energy and provides energy for the electrons in the light-emitting layer 3. After obtaining the energy, the light-emitting layer 3 releases photons to emit light. The energy supply component 2 is driven by electric energy and provides energy for the electrons in the light-emitting layer 3. The electrons at the energy supply end of the energy supply component 2 can be ejected into the light-emitting layer 3 under the action of electric energy and the ejected electrons release energy after entering the light-emitting layer 3.

[0050] The polarizer 1 polarizes the light emitted by the light-emitting layer 3 into chiral light. The polarizer 1 is a chiral material. The polarizer 1 is a chiral block or a chiral layer made of a chiral material. The chiral block or the chiral layer can polarize the light passing through it. The chiral peak of the polarizer 1 matches the light emitted by the light-emitting layer 3. The acquisition of the polarizer 1 includes chemical synthesis, micro-nano processing and other methods. The light emission wavelength of the light-emitting layer 3 matches the chiral peak of the polarizer 1. The light emitted by the light-emitting layer 3 can be completely polarized into chiral light by the polarizer 1.

[0051] The polarizer 1 has a region 101 with the strongest chirality, and the photons released by the light-emitting layer 3 escape only from the region 101 with the strongest chirality, and all light passing through the region 101 with the strongest chirality can be polarized into chiral light; the escape direction of the electrons at the energy supply end of the energy supply component 2 under the action of electric energy is parallel to the line segment connecting the center point of the light-emitting layer 3 and the center point of the polarizer 1, so the light-emitting layer 3 and the region 101 with the strongest chirality are both located on the escape path of the electrons at the energy supply end of the energy supply component 2.

[0052] The electrons at the energy supply end of the energy supply component 2 move to the light-emitting layer 3 after obtaining energy. After the electrons in the light-emitting layer 3 obtain the energy released by the electrons at the energy supply end of the energy supply component 2, the light-emitting layer 3 is in an excited state and releases photons. Since the momentum and energy of the photons are determined by the corresponding electrons that release energy, the photons in the light-emitting layer 3 maintain their original moving direction and escape from the region 101 with the strongest chirality.

[0053] Based on this, the electrons at the energy supply end of the energy supply component 2 escape outward under the action of electric energy. At this time, since the light-emitting layer 3 is located in the moving direction of the electrons at the energy supply end of the energy supply component 2, the electrons at the energy supply end of the energy supply component 2 move into the light-emitting layer 3 and release energy. The light-emitting layer 3 is converted into an excited state and releases photons. Since the momentum and energy of the photons are determined by the corresponding electrons that release energy, the photons in the light-emitting layer 3 will move according to the original moving direction of the electrons at the energy supply end of the energy supply component 2. At this time, since the region with the strongest chirality 101 is also located on the original escape path of the electrons at the energy supply end of the energy supply component 2, the photons emitted from the light-emitting layer 3 will also enter the region with the strongest chirality 101 of the polarizer 1 to complete the polarization of the light, thereby obtaining a chiral light-emitting device with a simple structure, which solves the problem that the chiral light source cannot be integrated and miniaturized due to the limitations of the light-emitting principle and the materials used.

[0054] Furthermore, if Figures 1 to 6 As shown, the energy supply component 2 includes a directional guiding layer 201, an electron moving layer 202 and a power source, and the center line of the directional guiding layer 201, the center line of the electron moving layer 202, the center line of the light emitting layer 3 and the center line of the strongest chirality region 101 are the same straight line and the straight line is the guiding straight line;

[0055] The polarizer 1, the directional guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 are arranged in sequence along the guiding straight line direction, and there is an overlapping area between the directional guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 along the guiding straight line direction. The overlapping area is the area 101 with the strongest chirality. At this time, the non-overlapping area between the directional guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 can be an irrelevant material used for installation or balancing the gravity of parts.

[0056] The power supply causes the electrons in the electron moving layer 202 to flow toward the directional guiding layer 201. Since the light-emitting layer 3 is located between the directional guiding layer 201 and the electron moving layer 202 and the power supply only supplies energy to the overlapping area, the electrons in the electron moving layer 202 under the action of the power supply voltage will enter the light-emitting layer 3.

[0057] Among the electrons in the electron moving layer 202, the electrons that are affected by the power supply voltage and flow toward the direction guiding layer 201 are energy-releasing electrons. When flowing toward the direction guiding layer 201, the energy-releasing electrons enter the light-emitting layer 3. After flowing to the light-emitting layer 3, the energy-releasing electrons release energy. The photons that obtain energy in the light-emitting layer 3 move along the flow direction of the energy-releasing electrons and escape from the region with the strongest chirality 101. The arrangement of the polarizer 1, the direction guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 enables the light-emitting device of the present application document to only supply energy to the corresponding region opposite to the region with the strongest chirality 101, thereby saving corresponding materials and structural space and increasing the light-emitting power of the light-emitting device under the same power supply.

[0058] Since the luminescence of the light-emitting layer 3 requires the energy-releasing electrons in the electron moving layer 202 to move into the light-emitting layer 3 and release energy, and the number of energy-releasing electrons that can enter the light-emitting layer 3 under different circumstances will be different due to the principle that makes them move or the difference in energy received by a single electron. Therefore, the shorter the path that the energy-releasing electrons need to move, the closer the number of electrons that can move into the light-emitting layer according to the corresponding principle is to the theoretical value, and the more stable the wavelength of light emitted by the light-emitting layer 3 is. Therefore, in order to ensure the stability of the emission wavelength of the chiral light source, the polarizer 1, the direction guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 can be arranged together to fit each other.

[0059] Furthermore, this embodiment is not shown in the accompanying drawings. When emitting light using the LED principle, the setting positions of the directional guiding layer and the electron moving layer can also be swapped, that is, the polarizer 1, the electron moving layer 202, the light-emitting layer 3 and the directional guiding layer 201 are arranged in sequence along the guiding straight line direction. At this time, the material arrangement order of the corresponding layers is the polarizer 1, the N-type region material layer, the P-type material light-emitting region and the P-type region material layer. When power is applied between the N-type region material layer and the P-type region material layer, the N-type region material layer, the P-type material light-emitting region and the P-type region material layer will form holes and electrons at the corresponding boundary positions, and the flow direction of the electrons at this time is from top to bottom.

[0060] The P-type material light-emitting area can still emit light due to the LED principle. The light emitted by the P-type material light-emitting area is converted into chiral light after being polarized by the polarizer 1.

[0061] Furthermore, if Figures 1 to 6 As shown, the electron moving layer 202 is in a pointed cone shape or a strip shape.

[0062] When the electron moving layer 202 is a pointed cone, the cone head of the electron moving layer 202 faces the polarizer 1. When the polarizer 1, the direction guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 are arranged in contact with each other, the electron moving layer 202 is in point contact with the light-emitting layer 3. Due to the tip effect, the electrons in the electron moving layer 202 can make as many photons of the light-emitting layer as possible escape from the region 101 with the strongest chirality while keeping the volume of the body small.

[0063] When the electron moving layer 202 is in a strip shape, energy-releasing electrons exist in the portion of the electron moving layer 202 that overlaps with the region 101 with the strongest chirality along the guiding straight line direction. When the polarizer 1, the direction guiding layer 201, the light-emitting layer 3 and the electron moving layer 202 are arranged in contact with each other, the electron moving layer 202 is in strip-shaped contact with the light-emitting layer 3. At this time, the energy supply area of ​​the power supply is concentrated on the portion of the electron moving layer 202 that overlaps with the region 101 with the strongest chirality along the guiding direction. Therefore, ordinary materials for installation or balancing gravity can be used at other positions of the electron moving layer 202.

[0064] The shape of the electron moving layer 202 here can also be other shapes that can form micro-area contact with the strongest chirality region 101 of the polarizer 1, such as the corner position of a common cone or face; the electron moving layer 202 that forms micro-area contact with the strongest chirality region 101 of the polarizer 1 can utilize the pointed cone effect to move the energy-releasing electrons in the electron moving layer 202 to the strongest chirality region 101 as much as possible, thereby ensuring the luminous effect of the chiral light source by changing the shape of the electron moving layer 202.

[0065] Furthermore, if Figures 1 to 3 As shown, the direction guiding layer 201 is a positive material layer 2011a, the electron moving layer 202 is a negative material layer 2021a, and the light emitting layer 3 is a light emitting material area 301a. The light emitting material area 301a emits light when it obtains energy and is in an excited state.

[0066] An energy supply electric field is formed between the positive material layer 2011a and the negative material layer 2021a under the action of the power supply voltage, the positive material layer 2011a is the positive electrode, the negative material layer 2021a is the negative electrode, the metal activity of the constituent materials of the positive material layer 2011a is less than the metal activity of the constituent materials of the negative material layer 2021a, the positive material layer 2011a is located between the polarizer 1 and the luminescent material area 301a as the positive electrode of the power supply, and the negative material layer 2021a is located on the side of the luminescent material area 301a away from the positive material layer 2011a as the negative electrode of the power supply, and there is no overlapping point in the moving paths of the electrons of the positive material layer 2011a and the negative material layer 2021a when they move to the area 101 with the strongest chirality.

[0067] At this time, the light-emitting material of the light-emitting material area 301 a includes TMDC and other typical layered light-emitting materials.

[0068] The coverage range of the energy supply electric field coincides with the region with the strongest chirality 101. The energy supply electric field is the electric field generated between the two electrodes after the power supply is applied to the positive material layer 2011a and the negative material layer 2021a. The electric field lines of the energy supply electric field point from the positive material layer 2011a to the negative material layer 2021a. The energy supply electric field can be a uniform electric field to obtain a light-emitting device with stable illumination. The energy supply electric field can also be a non-uniform electric field, which controls the electric field strength at different positions so that the light at some positions is brighter than that at other positions.

[0069] Furthermore, if Figures 1 to 3 As shown, the principle of electroluminescence is used here to enable the chiral light source to emit light of sufficient brightness.

[0070] An insulating layer 2041 is also arranged between the positive material layer 2011a and the negative material layer 2021a; the insulating layer 2041 is located on the path where the electrons in the negative material layer 2021a move toward the positive material layer 2011a; since the quantum tunneling phenomenon only occurs at the quantum scale, the thickness of the insulating layer 2041 can only be at the nanometer level; the thickness of the insulating layer 2041 is less than the tunneling distance of the electrons in the negative material layer 2021a, and the thickness of the insulating layer 2041 is less than 5 nanometers.

[0071] At this time, in order to ensure the light-emitting effect of the light-emitting material region 301 a , the thickness of the light-emitting material region 301 a should be less than 10 nanometers.

[0072] The electrons in the negatively charged material layer 2021a move toward the positive electrode of the power source, that is, the positively charged material layer 2011a, under the action of the electric field. During the movement, since the insulating layer 2041 is located on the moving path of the electrons in the negatively charged material layer 2021a, the electrons will be hindered from moving by the insulating layer 2041 at the classical mechanics level. However, since the thickness of the insulating layer 2041 is at the nanometer level, the insulating layer 2041 acts as a potential barrier. The electrons moving from the negatively charged material layer 2021a to the positively charged material layer 2011a can tunnel after obtaining the energy given to them by the electric field and release energy after the tunneling is completed. The energy is absorbed by the light-emitting material area 301a, so that the light-emitting material area 301a is in an excited state and emits light, thereby solving the light-emitting problem of the light-emitting device while using materials and device structures that are as simple as possible.

[0073] Furthermore, this embodiment is not shown in the accompanying drawings. The directional guiding layer 201 and the electron moving layer 202 are both metal material layers. The metal material layer located in the directional guiding layer 201 is the first metal material layer, and the metal material layer located in the electron moving layer 202 is the second metal material layer. An insulating material layer and a light-emitting layer 3 with a thickness of nanometers are arranged between the two metal material layers. The first metal material layer, the light-emitting layer 3, the insulating layer and the second metal material layer; when the power supply applies voltage to the two metal material layers, the electrons in the second metal material layer move toward the first metal material layer under the action of the voltage, and a part of the electrons in the second metal material layer that move toward the first metal material layer will undergo quantum tunneling after reaching the insulating material layer. Therefore, part of the electrons in the second metal material layer can penetrate the insulating layer and enter the light-emitting layer to emit light, thereby solving the luminescence problem of the chiral light source.

[0074] Furthermore, if Figures 1 to 3 As shown, a plurality of first fixing members 2031a are arranged between the negative material layer 2021a and the insulating layer 2041 , one end of the first fixing member 2031a is fixedly connected to the negative material layer 2021a , and the other end of the first fixing member 2031a is fixedly connected to the insulating layer 2041 .

[0075] There is no restriction on the number of the first fixing members 2031a, as long as the number of the first fixing members 2031a is sufficient to fix the negative material layer 2021a.

[0076] One ends of several of the first fixing members 2031a are respectively fixedly connected to the parts of the negative material layer 2021a excluding its cone point for connection and fixing, and the other ends of several of the first fixing members 2031a are fixedly connected to the insulating layer 2041. The length of the first fixing members 2031a matches the vertical length of the negative material layer 2021a. After the two ends of the first fixing members 2031a are fixed, the height difference between the cone head of the negative material layer 2021a and the insulating layer 2041 will not exceed 5 nanometers. The first fixing members 2031a ensure that the position of the negative material layer 2021a is fixed when it is in a pointed cone shape, avoiding changes in the structure due to external factors, thereby enabling the light-emitting device to adapt to various working conditions.

[0077] Furthermore, if Figure 3 As shown, when the negative-charge material layer 2021a is in a strip shape, the insulating layer 2041 is directly placed and fixed on the negative-charge material layer 2021a.

[0078] Furthermore, if Figures 4 to 6As shown, the diode light-emitting principle is used here to make the light-emitting unit 4 emit light, the direction guiding layer 201 is a P-type region material layer 2011b, the electron moving layer 202 is an N-type region material layer 2021b, the light-emitting layer 3 is an N-type material light-emitting region 301b, the P-type region material layer 2011b is a P-type semiconductor in the diode, and the N-type region material layer 2021b is an N-type semiconductor in the diode.

[0079] The P-type region material layer 2011b is connected to the negative electrode of the power source, and the N-type region material layer 2021b is connected to the positive electrode of the power source.

[0080] The upper end surface of the N-type material light-emitting area 301b is in contact with the P-type area material layer 2011b, and the lower end surface of the N-type material light-emitting area 301b is in contact with the N-type area material layer 2021b. Under the action of the power supply voltage, the P-type area material layer 2011b, the N-type area material layer 2021b and the N-type material light-emitting area 301b in contact with each other will form holes and electrons at the corresponding intersection positions, so that the N-type material light-emitting area 301b emits composite light, thereby utilizing the diode principle to solve the light-emitting problem of the light-emitting device while using materials and device structures as simple as possible.

[0081] Furthermore, if Figures 4 to 6 As shown, the bandgap width of the N-type region material layer 2021b is greater than the bandgap width of the N-type material light-emitting region 301b. The bandgap width difference between the N-type region material layer 2021b and the N-type material light-emitting region 301b ensures that the light emitted by the N-type material light-emitting region 301b can pass through the N-type region material layer 2021b without being absorbed by the N-type region material layer 2021b, thereby ensuring the normal operation of the device when emitting light using the diode principle.

[0082] Furthermore, if Figures 4 to 6 As shown, a plurality of second fixing members 2031b are arranged between the N-type region material layer 2021b and the N-type material light-emitting region 301b, one end of the second fixing member 2031b is fixedly connected to the N-type region material layer 2021b, and the other end of the second fixing member 2031b is fixedly connected to the N-type material light-emitting region 301b.

[0083] The number of the second fixing members 2031 b is not limited here, as long as it is sufficient to fix the N-type region material layer 2021 b.

[0084] The length of the second fixing member 2031b matches the vertical length of the N-type region material layer 2021b. After the two ends of the second fixing member 2031b are fixed, the cone head of the N-type region material layer 2021b is attached to the N-type material light-emitting region 301b. The second fixing member 2031b ensures that the position of the N-type region material layer 2021b is fixed when it is in a pointed cone shape, avoiding changes in the structure due to external factors, thereby enabling the light-emitting device to adapt to various working conditions.

[0085] When the direction guiding layer 201 is the P-type region material layer 2011b, the electron moving layer 202 is the N-type region material layer 2021b, and the light-emitting layer 3 is the N-type material light-emitting region 301b, after the light-emitting device is powered on, the power supply applies a voltage between the P-type region material layer 2011b and the N-type region material layer 2021b, so that the P-type region material layer 2011b, the N-type region material layer 2021b and the N-type material light-emitting region 301b that are attached to each other under the action of the power supply voltage will form holes and electrons at the corresponding intersection positions, thereby allowing the N-type material light-emitting region 301b to compositely emit light, and the light emitted by the N-type material light-emitting region 301b becomes chiral light after being polarized by the polarizer 1, thereby completing the chiral light emission.

[0086] Furthermore, if Figure 7 As shown, the structure of the polarizer 1 is a mirror-asymmetric chiral structure.

[0087] The working process of the present invention is as follows: first, the power supply of the light-emitting device is powered on, and the power supply applies a voltage between the positive material layer 2011a and the negative material layer 2021a, so that an energy supply electric field is formed between the positive material layer 2011a and the negative material layer 2021a. Subsequently, the electrons in the negative material layer 2021a move from the negative material layer 2021a to the positive material layer 2011a under the action of the electric field. Since an insulating layer 2041 is provided on the moving path of the electrons in the negative material layer 2021a and the thickness of the insulating layer 2041 is less than that of the negative material layer 2021a, the electrons in the negative material layer 2021a move from the negative material layer 2021a to the positive material layer 2011a. The tunneling distance of the electrons in the negative material layer 2021a is determined, and thus the electrons in the negative material layer 2021a tunnel when reaching the insulating layer 2041 and pass through the insulating layer 2041. Then, the electrons in the negative material layer 2021a enter the light-emitting layer 3. Since the electrons after tunneling quickly release energy, the electrons in the negative material layer 2021a release energy in the light-emitting layer 3, so that the light-emitting layer 3 is in an excited state and emits photons to the strongest chirality region 101 of the polarizer 1. The polarizer 1 then polarizes the light passing through its structure into chiral light, thereby completing the irradiation of chiral light.

[0088] In summary, the light-emitting device controls the position matching of the light-emitting area of ​​the light-emitting unit 4 with the position of the strongest chirality area 101 of the polarizer 1, so that all the photons emitted by the light-emitting layer 3 enter the strongest chirality area 101, thereby increasing the light-emitting power of the light-emitting device under the same power supply. In addition, the positive material layer 2011a, negative material layer 2021a, light-emitting layer 3, N-type region material layer 2021b and other materials used in the light-emitting device are all common materials in the field, and do not require special process treatment. The acquisition method is simple, which reduces the processing difficulty of the equipment, thereby solving the problem that the chiral light source cannot be integrated and miniaturized due to the limitations of the light-emitting principle and the materials used.

[0089] It should be understood that the terms "first", "second", etc. are used in the present invention to describe various information, but such information should not be limited to these terms, and these terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the "first" information may also be referred to as the "second" information, and similarly, the "second" information may also be referred to as the "first" information. In addition, the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0090] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. An electrically driven chiral light emitting device, characterized in that: The light emitting device comprises: A light-emitting unit, the light-emitting unit comprising a light-emitting layer and an energy supply component, the light-emitting layer releases photons to emit light after obtaining energy, and the energy supply component is driven by electrical energy and provides energy for electrons in the light-emitting layer; A polarizer, wherein the polarizer is a chiral material, and the polarizer polarizes the light emitted by the light-emitting layer into chiral light, and the emission wavelength of the light-emitting layer matches the chiral peak of the polarizer; The polarizer has a region with the strongest chirality, and the photons released by the light-emitting layer escape only from the region with the strongest chirality.

2. The electrically driven chiral light emitting device according to claim 1, characterized in that: The energy supply component includes a direction guiding layer, an electron moving layer and a power source; The center line of the direction guiding layer, the center line of the electron moving layer, the center line of the light emitting layer and the center line of the region with the strongest chirality are the same straight line and the straight line is the guiding straight line; The region with the strongest chirality, the directional guiding layer, the light-emitting layer and the electron moving layer are sequentially arranged along the direction of the guiding straight line, and there is an overlapping region among the directional guiding layer, the light-emitting layer and the electron moving layer along the direction of the guiding straight line; The power source causes the electrons in the electron moving layer to flow toward the direction guiding layer; Among the electrons in the electron moving layer, the electrons that are affected by the power supply voltage and flow to the direction guiding layer are energy-releasing electrons. When flowing to the direction guiding layer, the energy-releasing electrons enter the light-emitting layer. After flowing to the light-emitting layer, the energy-releasing electrons release energy. The photons that obtain energy in the light-emitting layer move along the flow direction of the energy-releasing electrons and escape from the area with the strongest chirality.

3. The electrically driven chiral light emitting device according to claim 2, characterized in that: The electron moving layer is in a pointed cone or strip shape; When the electron moving layer is in a pointed cone shape, the cone head of the electron moving layer faces the region with the strongest chirality; When the electron moving layer is in a strip shape, energy-releasing electrons exist in a portion of the electron moving layer that overlaps with the region with the strongest chirality along the guiding straight line direction.

4. The electrically driven chiral light emitting device according to claim 3, characterized in that: The direction guiding layer is a positive material layer, the electron moving layer is a negative material layer, and the light emitting layer is a light emitting material area; An energy supply electric field is formed between the positive material layer and the negative material layer under the action of the power supply voltage, the positive material layer is the positive electrode, and the negative material layer is the negative electrode; The coverage of the energy supply electric field coincides with the region with the strongest chirality; The light-emitting material region and the region with the strongest chirality have an overlapping region.

5. The electrically driven chiral light emitting device according to claim 4, characterized in that: An insulating layer is also provided between the positive material layer and the negative material layer; The insulating layer is located on the path of electrons in the negative material layer moving toward the positive material layer, and the thickness of the insulating layer is smaller than the tunneling distance of electrons in the negative material layer; The electrons in the negatively charged material layer pass through the insulating layer through quantum tunneling and enter the light-emitting material region to release energy, and the light-emitting material region emits light.

6. The electrically driven chiral light emitting device according to claim 5, characterized in that: A plurality of first fixing members are arranged between the negative material layer and the insulating layer; One end of the first fixing member is fixedly connected to the negative material layer, and the other end of the first fixing member is fixedly connected to the insulating layer. At this time, the distance between the negative material layer and the insulating layer is smaller than the tunneling distance of electrons in the negative material layer.

7. The electrically driven chiral light emitting device according to claim 3, characterized in that: The direction guiding layer is a P-type region material layer, the electron moving layer is an N-type region material layer, and the light emitting layer is an N-type material light emitting region; The P-type region material is connected to the negative electrode of the power supply, and the N-type region material is connected to the positive electrode of the power supply; The upper end surface of the N-type material light-emitting area is in contact with the P-type area material layer, and the lower end surface of the N-type material light-emitting area is in contact with the N-type area material layer; The P-type region material layer and the N-type region material layer enable the N-type material light-emitting region to emit light under the action of a power supply voltage.

8. The electrically driven chiral light emitting device according to claim 7, characterized in that: The bandgap width of the N-type region material layer is greater than the bandgap width of the N-type material light emitting region.

9. The electrically driven chiral light emitting device according to claim 7, characterized in that: A second fixing member is provided between the N-type region material layer and the N-type material light-emitting region; One end of the second fixing member is fixedly connected to the N-type region material layer, and the other end of the second fixing member is fixedly connected to the N-type material light emitting region.

10. The electrically driven chiral light emitting device according to claim 1, characterized in that: The structure of the polarizer is a mirror-asymmetric chiral structure.

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