A directional sound-emitting screen, a display device and a manufacturing process of a directional sound-emitting screen

By using the TGV process on the UTG substrate layer of the transparent screen directional speaker, and fixing it through adhesive colloids, the problem of difficulty in ensuring microstructure accuracy and difficult processing technology in the prior art is solved, and a high-precision, extremely narrow frame directional sound screen is realized.

CN119418616BActive Publication Date: 2025-05-06AUDFLY TECH SUZHOU CO LTD
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Patent Information

Application Number
CN202510014164.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-06
Publication Date
2025-05-06
Estimated Expiration
2045-01-06

AI Technical Summary

Technical Problem

The existing transparent screen directional speakers are difficult to ensure accuracy and difficult to process when etching microstructures in the UTG substrate layer.

Method used

The TGV process is used to process grooves and microstructures on the UTG substrate layer of the vibrating layer and the non-vibration layer respectively to form grooves. The microstructure is embedded in the grooves to form nested structures, and is fixed by adhesive colloids to improve the bonding stability.

Benefits of technology

It reduces the difficulty of microstructure processing, improves precision control, realizes a directional sound screen with extremely narrow frames, and improves the overall reliability and structural strength of the product.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention discloses a directional sound screen, a display device and a preparation process of the directional sound screen, wherein the preparation process of the directional sound screen comprises preparing a vibration layer, including etching a plurality of first grooves on a first UTG substrate layer by a TGV process; preparing a non-vibration layer, including integrally forming a microstructure on a second UTG substrate layer by a TGV process; laminating the frames of the vibration layer and the non-vibration layer, and after laminating, the microstructure is correspondingly embedded in the first groove. The present invention combines the microstructure with the nested structure of the groove by processing the microstructure through the TGV punching technology, thereby reducing the difficulty of its processing and achieving easy control of its processing accuracy.
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Description

Technical Field

[0001] The present invention relates to the technical field of directional sound generation from screens, and in particular to a directional sound generation screen, a display device and a preparation process of the directional sound generation screen. Background Art

[0002] Ultra-thin, narrow-frame, and even full-screen designs of display devices leave less and less space for sound-generating devices. Traditional sound-generating devices are large in size and have limited installation locations. It is difficult to find a suitable location and space in the new generation of display devices. Therefore, it is necessary to redesign the sound-generating device that can adapt to the needs of current display devices.

[0003] Some display device manufacturers have designed a way to use the screen to generate sound. As a surface audio technology, screen sound technology provides a new solution for the sound of multimedia audio-visual equipment. Currently, transparent screen directional speakers that combine display devices with ultrasonic transducers are being developed.

[0004] Existing transparent screen directional speakers generally include a vibration layer, a microstructure and a non-vibration layer. The vibration layer and the non-vibration layer are bonded to each other, and the microstructure is supported between the vibration layer and the non-vibration layer. At least one electrode layer is provided on the vibration layer and the non-vibration layer to be connected to an external driving circuit. The external circuit supplies power, applies a voltage signal to the non-vibration layer and the vibration layer, drives the vibration layer to vibrate up and down, and emits an ultrasonic signal. The ultrasonic signal is self-demodulated by the air to produce audible sound.

[0005] When the substrate layer of the vibration layer or the non-vibration layer is a UTG substrate layer, the existing microstructure is formed by directly etching the UTG (ultra-thin flexible glass) substrate layer of the vibration layer or the non-vibration layer, and the microstructure does not form a nested structure with the vibration layer or the non-vibration layer. Therefore, in this solution, since the UTG is relatively thin, the accuracy of the etched microstructure is difficult to guarantee, and the processing technology is relatively difficult. Therefore, how to ensure the processing accuracy of the microstructure while reducing the difficulty of its preparation process is a problem that needs to be solved. Summary of the invention

[0006] The purpose of the present invention is to provide a directional sound-emitting screen, a display device and a preparation process of the directional sound-emitting screen.

[0007] To achieve the above-mentioned purpose, on the one hand, the present invention proposes a directional sound screen, comprising: a vibration layer, wherein the vibration layer comprises a first UTG substrate layer, a first conductive layer and a first insulating layer, a surface of the first UTG substrate layer close to the non-vibration layer is etched by a TGV process to form a plurality of first grooves recessed in a direction away from the non-vibration layer, the first conductive layer is formed on the surface of the first UTG substrate layer close to the non-vibration layer and at least covers the area on the surface of the first UTG substrate layer except the first grooves, and the first insulating layer is formed on the surface of the first conductive layer close to the non-vibration layer and covers the first conductive layer;

[0008] A non-vibration layer, the non-vibration layer comprising a second UTG substrate layer, a plurality of microstructures, and a second conductive layer, the microstructures being integrally formed on the surface of the second UTG substrate layer close to the vibration layer by a TGV process, the microstructures being convex structures protruding toward the vibration layer and having a height greater than the depth of the first groove, the second conductive layer being formed on the surface of the second UTG substrate layer close to the vibration layer and covering at least the area on the surface of the second UTG substrate layer except for the microstructures;

[0009] The vibration layer fits the frame of the non-vibration layer, and the microstructure on the non-vibration layer is correspondingly embedded in the first groove on the vibration layer. An air gap required for the vibration layer to vibrate up and down is formed between the vibration layer and the non-vibration layer through the microstructure.

[0010] In a preferred embodiment, the vibration layer further includes a first edge trace, the first edge trace is directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the second groove is covered with the first conductive layer, and the second groove is filled with metal to form the first edge trace;

[0011] And / or, the non-vibration layer further includes a second edge routing, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with a second conductive layer, and the third groove is filled with metal to form the second edge routing;

[0012] Alternatively, the non-vibration layer also includes a second edge routing and an edge insulating layer, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, the third groove is filled with metal to form the second edge routing, and the edge insulating layer is formed on at least one edge of the surface of the second conductive layer close to the vibration layer and covers the second edge routing.

[0013] In a preferred embodiment, when directly formed on the edge of the corresponding conductive layer, the height of the first edge line and the second edge line is less than or equal to 5um, and the width is less than 1mm; when filled in the groove, the height of the first edge line and the second edge line is greater than the depth of the corresponding groove, and the width of the part protruding from the groove is also greater than the width of the corresponding groove;

[0014] and / or, when filled in the groove, the height of the first edge line and the second edge line is greater than or equal to 5 um, and the width of the part thereof protruding from the groove is less than 1 mm;

[0015] And / or, the thickness of the edge insulation layer is less than or equal to 5 um, and the width is greater than the width of the second edge wiring;

[0016] And / or, the second groove and the third groove are also formed by etching through a TGV process.

[0017] In a preferred embodiment, the microstructure is also embedded and fixed in the first groove of the vibration layer by a viscous colloid; and / or the viscous colloid is arranged in the first groove, and / or the microstructure is embedded in the first groove and wrapped by the viscous colloid before the viscous colloid is cured, and the viscous colloid is cured after embedding.

[0018] In a preferred embodiment, the vibration layer further comprises a first hardened buffer layer and an optical film layer, wherein the first hardened buffer layer is formed on the upper end surface of the first UTG substrate layer away from the non-vibration layer, and the optical film layer is formed on the upper end surface of the first hardened buffer layer away from the non-vibration layer;

[0019] And / or, the non-vibration layer further includes a second hardened buffer layer, and the second hardened buffer layer is formed on a lower end surface of the second UTG substrate layer away from the vibration layer.

[0020] In a preferred embodiment, the thickness of the first hardened buffer layer is 15um~25um, and / or the thickness of the optical thin film layer is 1um~5um; and / or the thickness of the second hardened buffer layer is 2um~4um.

[0021] In a preferred embodiment, the thickness of the first UTG substrate layer is 50um~100um, and / or the depth of the first groove is 20um~70um, and the diameter is 20um~100um, and / or the thickness of the first conductive layer is less than 100nm, and the square resistance is 70Ω~100Ω, and / or the thickness of the first insulating layer is 6um~15um, and / or the thickness of the second UTG substrate layer is greater than 30um, and / or the height of the microstructure is 30um~100um, the diameter is 100um~200um, and the center distance between two adjacent microstructures is 3mm~3.2mm, and / or the thickness of the second conductive layer is less than 100nm, and the square resistance is 70Ω~100Ω, and / or the height of the air gap is 5um~15um.

[0022] On the other hand, the present invention provides a display device including the above-mentioned directional sound-emitting screen.

[0023] In another aspect, the present invention provides a process for preparing a directional sound screen, which comprises:

[0024] S1, preparing a vibration layer, said S1 comprising:

[0025] S11, etching a surface of the first UTG substrate layer close to the non-vibration layer by a TGV process to form a plurality of first grooves recessed in a direction away from the non-vibration layer;

[0026] S12, forming a first conductive layer on the surface of the first UTG substrate layer close to the non-vibration layer, wherein the first conductive layer at least covers the area on the surface of the first UTG substrate layer except the first groove;

[0027] S13, forming a first insulating layer covering the first conductive layer on a surface of the first conductive layer close to the non-vibration layer;

[0028] S2, preparing a non-vibration layer, said S2 comprising:

[0029] S21, forming a microstructure on a surface of the second UTG substrate layer close to the vibration layer by a TGV process, wherein the microstructure is a protruding structure protruding toward the vibration layer and having a height greater than a depth of the first groove;

[0030] S22, forming a second conductive layer on the surface of the second UTG substrate layer close to the vibration layer, wherein the second conductive layer at least covers the area on the surface of the second UTG substrate layer except the microstructure;

[0031] S3, bonding the frames of the vibration layer and the non-vibration layer together, after bonding, the microstructure on the non-vibration layer is correspondingly embedded in the first groove on the vibration layer, and an air gap required for the vibration layer to vibrate up and down is formed between the vibration layer and the non-vibration layer through the microstructure.

[0032] In a preferred embodiment, in S11, the edge of the first groove is further sharpened; and / or, in S12, the first conductive layer is formed by a magnetron sputtering process; and / or, between S12 and S13, a first hardened buffer layer is formed on the upper end surface of the first UTG substrate layer away from the non-vibration layer; and / or, the first hardened buffer layer is formed by magnetron sputtering and annealing of the first conductive layer; and / or, the first hardened buffer layer is integrally formed by a printing or coating process; and / or, between S12 and S13, an optical thin film layer is formed on the upper end surface of the first hardened buffer layer away from the non-vibration layer; and / or, in S1 2 and S13, it also includes forming a first edge routing on at least one edge of the surface of the first conductive layer close to the non-vibration layer; and / or, the first edge routing is directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the second groove is covered with the first conductive layer, and the second groove is filled with metal to form the first edge routing; and / or, the first insulating layer is formed by coating or exposure development or printing process; and / or, the second groove is also formed by etching by TGV process, and / or, the edge of the second groove is also sharpened.

[0033] In a preferred embodiment, S2 also includes: S23, forming a second hardened buffer layer on the lower end surface of the second UTG substrate layer away from the vibration layer; and / or, the second hardened buffer layer is formed by processing after magnetron sputtering and annealing of the second conductive layer; and / or, the second hardened buffer layer is integrally formed by a printing or coating process; and / or, between S22 and S23, it also includes forming a second edge routing on at least one edge of the surface of the second conductive layer close to the vibration layer; and / or, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge routing; and / or, the third groove is also formed by etching through a TGV process, and / or, the edge of the third groove is also sharpened; and / or, S2 also includes forming an edge insulation layer covering the second edge routing on at least one edge of the surface of the second conductive layer close to the vibration layer.

[0034] In a preferred embodiment, S3 includes: filling the first groove of the vibration layer with an uncured viscous colloid; bonding the vibration layer and the non-vibration layer by a bonding machine, and the microstructure is correspondingly embedded in the first groove and wrapped by the viscous colloid, and then a DC bias voltage is applied between the vibration layer and the non-vibration layer to remove bubbles, and the viscous colloid is solidified during the process of applying the DC bias voltage to achieve bonding between the vibration layer and the non-vibration layer; and / or, the viscous colloid is formed by vacuum silk screen printing or 3D printing process; and / or, the DC bias voltage is greater than the DC bias voltage applied to the directional sound screen during operation, and is less than the total voltage applied to the directional sound screen.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] 1. The present invention adopts TGV punching technology on the ultra-thin glass UTG of the vibration layer and the non-vibration layer to respectively form grooves and microstructures, and the microstructure is embedded in the groove to form a stable structure. The microstructure is processed by TGV punching technology and combined with the nested structure of the groove on the vibration layer, and its height can be between 30um and 100um, which reduces its processing difficulty and realizes easy control of its processing accuracy, and the accuracy is easy to control between ±1um.

[0037] 2. The present invention preferably fills the edge wiring into the groove formed on the UTG. Compared with the existing direct processing on the UTG, it can further reduce the width of the existing edge wiring while improving the conductivity of the existing edge wiring, thereby realizing the extremely narrow frame of the directional sound screen, thereby meeting the market demand for extremely narrow frame products.

[0038] 3. The present invention fixes the microstructure and the groove by means of a sticky colloid, thereby increasing the lamination stability between the vibration layer and the non-vibration layer, so that the vibration layer will not separate from the microstructure during the vibration process, and the distortion can be reduced to less than 10%, thereby improving the overall reliability of the product.

[0039] 4. The present invention directly integrally forms the microstructure from UTG, and fills the groove that cooperates with the microstructure with a viscous colloid that can eliminate the light and shadow of the groove, thereby increasing the visibility of the entire microstructure and realizing visual inspection from the client side, which will form an integrated effect; in addition, since the diameter of the microstructure in this solution can be increased from the traditional 20um to 100um~200um, the structural strength is improved, which greatly enhances the reliability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a schematic diagram of the laminated structure of the directional sound-emitting screen of the present invention (before lamination);

[0041] Figure 2It is a schematic diagram of the laminated structure of the directional sound-emitting screen (after bonding) of the present invention;

[0042] Figure 3 It is a schematic structural diagram of forming a third groove on the second UTG substrate layer of the present invention;

[0043] Figure 4 It is a schematic diagram of the structure in which a second conductive layer is laid in the third groove of the present invention;

[0044] Figure 5 It is a schematic diagram of the structure of filling silver paste in the third groove of the present invention to form a second edge wiring and a covering edge insulating layer;

[0045] Figure 6 The figure is a schematic diagram of the process for preparing the directional sound-emitting screen of the present invention.

[0046] The accompanying drawings are marked as follows:

[0047] 1. Vibration layer, 11. First UTG substrate layer, 12. First conductive layer, 13. First edge routing, 14. First insulating layer, 15. First hardened buffer layer, 16. Optical film layer, 17. First groove, 18. Second groove, 2. Non-vibration layer, 21. Second UTG substrate layer, 22. Microstructure, 23. Second conductive layer, 24. Second edge routing, 25. Second hardened buffer layer, 26. Third groove, 27. Edge insulating layer, 3. Air gap. DETAILED DESCRIPTION

[0048] The specific embodiments of the present invention are described in detail below, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0049] Unless explicitly stated otherwise, throughout the specification and claims, the term “comprise” or variations such as “include” or “comprising”, etc., will be understood to include the stated elements or components but not to exclude other elements or components.

[0050] Combination Figure 1 and Figure 2 As shown, a directional sound-emitting screen disclosed by the present invention specifically includes a vibration layer 1 and a non-vibration layer 2. The frames of the vibration layer 1 and the non-vibration layer 2 are fitted together, and an air gap 3 required for the vibration layer 1 to vibrate up and down is formed between the vibration layer 1 and the non-vibration layer 2. When working, a voltage signal is applied to the non-vibration layer 2 and the vibration layer 1 to drive the vibration layer 1 to vibrate up and down to emit an ultrasonic signal, and the ultrasonic signal is self-demodulated by the air to produce audible sound.

[0051] Among them, the vibration layer 1 specifically includes a first UTG substrate layer 11, a first conductive layer 12, a first edge wiring 13, a first insulating layer 14, a first hardened buffer layer 15 and an optical film layer 16. The first UTG substrate layer 11 is specifically made of UTG (ultra-thin flexible glass) material, and its thickness can be 50um~100um. Preferably, a plurality of first grooves 17 recessed away from the non-vibration layer 2 are formed by etching through a TGV (through glass via) process on the surface of the first UTG substrate layer 11 close to the non-vibration layer 2. The first groove 17 is a non-through hole. When implemented, the depth of the first groove 17 is preferably 20um~70um, and the diameter is preferably 20um~100um. In addition, in order to prevent light and shadow and prevent uneven preparation of the subsequent first conductive layer 12, after TGV drilling, it is also preferred to sharpen the edge of the first groove 17.

[0052] The first conductive layer 12 is formed on the end surface of the first UTG substrate layer 11 close to the non-vibration layer 2 and at least covers the area on the surface of the first UTG substrate layer 11 except the first groove 17. In implementation, the thickness of the first conductive layer 12 is generally less than 100nm, and the square resistance is 70Ω~100Ω. During preparation, the first conductive layer 12 can be formed by plating indium tin oxide ITO using a magnetron sputtering process. Since the edge of the first groove 17 is sharpened, no uneven state will be formed when magnetron sputtering ITO.

[0053] The first edge trace 13 is formed on at least one edge of the surface of the first conductive layer 12 close to the non-vibration layer 2. During implementation, the first edge trace 13 can be directly formed on the edge of the first conductive layer 12, such as by printing metal wires or silk-screening to print silver paste. In this implementation, the height of the first edge trace 13 is generally required to be less than or equal to 5um, such as between 1um and 5um. The thicker the thickness, the greater the step difference, and the UTG material is prone to breakage. In order to meet the requirements of a narrow frame, its width is generally less than 1mm.

[0054] Alternatively, preferably, a second groove 18 is first formed on at least one edge of the surface of the first UTG substrate layer 11 close to the non-vibration layer 2 by TGV punching technology, and the second groove 18 is covered with the first conductive layer 12, and the first edge trace 13 is formed by filling the second groove 18 with metal (such as silver paste). When filled in the second groove 18, the height of the first edge trace 13 is greater than the depth of the second groove 18, and the width of the part above the groove is also greater than the width of the corresponding groove. In implementation, the height of the first edge trace 13 is greater than or equal to 5um, and the height of the part above the second groove 18 is less than or equal to 5um, and the width is less than 1mm. Compared with the first embodiment, in this embodiment, the edge trace is filled into the UTG substrate layer, so the height of the first edge trace 13 can be greater than or equal to 5um, but generally less than or equal to 30um, and the height above the groove part is less than or equal to 5um, and the width is less than 1mm, that is, its total thickness is increased compared with the first embodiment (such as from 5um to 30um), thereby greatly increasing its conductive area, thereby improving the conductivity of the existing edge trace and further reducing its width, realizing the extremely narrow frame of the directional sound screen, thereby meeting the market demand for extremely narrow frame products. In addition, the depth of the second groove 18 is designed according to the formula R=ρL / S, where R represents resistance, ρ represents resistivity, L is length, and S is cross-sectional area. That is to say, the present invention adopts the caulking process to increase the total thickness of the first edge trace 13, which is equivalent to increasing its cross-sectional area S. If S is increased from 5um to 30um, and other parameters remain unchanged, the resistance R will become 1 / 6 of the original resistance. In addition, it can be known from this formula that the height of the first edge trace 13 is not limited to being greater than or equal to 5um as defined here, and can also be less than 5um. Its height varies according to different filling materials and different length parameters, and the resistance of the first edge trace 13 is preferably less than 6Ω.

[0055] In addition, since a general display screen has three narrow sides and one wide side, when making the first edge routing 13, the wide side can be directly formed on the first UTG substrate layer 11 using a traditional printing or mask sputtering process, and the other three sides are formed using the above-mentioned filling method, which makes it easy to form a narrow frame.

[0056] The first insulating layer 14 is formed on the surface of the first conductive layer 12 close to the non-vibration layer 2 and covers the first conductive layer 12. When implemented, its thickness is preferably 6um~15um. When implemented, since the first insulating layer 14 is a key functional layer, it has extremely high requirements for material performance parameters, and the withstand voltage needs to be above 40kv / mm, and there are few microbubbles and impurities, which can reduce breakdown. At present, it is preferred to coat, expose and develop, or print to make VCD vacuum drying and defoaming, and then solidify to form. In addition, since the first insulating layer 14 is a key material, it plays a dielectric role in the parallel plate capacitor. Since the dielectric material is prone to sound polarization in the electric field, polarization will weaken the electric field, so that the amplitude of the vibration layer is weakened, and the sound pressure of the product decreases. In addition, since the product as a whole works under high voltage, such as a DC bias voltage of 300~400V, and an AC voltage of 150~250V, the material also needs to withstand high voltage, and the dielectric strength must be higher than 40KV / mm. In one implementation case, the material selection Tg (temperature resistance) temperature is higher than 200°, the molecular chain is relatively symmetrical, and the impurity-free material can ensure that the product does not produce sound polarization under 300V DC bias voltage + 200V AC voltage. High Tg materials have relatively stable molecular chains and high structural strength, and are not easy to cause deflection, thereby causing polarization. In another embodiment, the material selection body resistance and surface resistance are both 10 to the 9th to 11th power, and the thickness is preferably 8~12um. It can withstand 300V DC bias voltage + 200V AC voltage without sound polarization of the product, while maintaining a 1kHz sound pressure of more than 70db.

[0057] The first hardened buffer layer 15 is formed on the upper end surface of the first UTG substrate layer 11 away from the non-vibration layer 2. When implemented, its thickness is generally set to 15um~25um. Preferably, there is no optical bonding glue between the first hardened buffer layer 15 and the first UTG substrate layer 11 of the present invention, and the first hardened buffer layer 15 of the present invention is a layer of material, which is integrally formed. After curing, the surface layer of the first hardened buffer layer 15 has hardening properties, and the surface hardness can reach at least 750g 2H, and can reach up to 750g 7H. In other alternative embodiments, the first hardened buffer layer 15 can also be made of traditional OCA sheets with hardened layer Hardcoating TPU (thermoplastic polyurethane rubber) or PET (polyethylene terephthalate) or CPI (transparent polyimide film) and other materials. In addition, in order to reduce the stress unevenness caused by magnetron sputtering ITO, it is preferred to first perform magnetron sputtering and annealing of ITO, and then make the first hardened buffer layer 15.

[0058] The optical film layer 16 is formed on the upper end surface of the first hardened buffer layer 15 away from the non-vibration layer 2. When implemented, the optical film layer 16 is specifically an anti-glare (AG) / anti-reflection (AR) anti-fingerprint (AF) layer, and its thickness is related to the process, such as being set to 1um~5um, generally around 1um. According to customer needs, if there is a folding requirement, the lower the thickness of the optical film layer 16, the better the folding performance.

[0059] The non-vibration layer 2 specifically includes a second UTG substrate layer 21, a plurality of microstructures 22, a second conductive layer 23, a second edge routing 24, and a second hardened buffer layer 25. When implemented, the second UTG substrate layer 21 is also made of UTG material, the thickness of which is generally more than 30um, as is the first UTG substrate layer 11. Preferably, the groove body (the groove body is a non-through-hole groove body) on the surface of the second UTG substrate layer 21 close to the vibration layer 1 except for the microstructure 22 area is etched away by the TGV (through-glass via) process, and the part outside the groove body forms a plurality of microstructures 22, that is, the microstructure 22 is integrally formed on the second UTG substrate layer 21 by the TGV process, that is, the microstructure 22 is also made of ultra-thin flexible glass material, and its refractive index is consistent with the refractive index of the UTG substrate layer of the vibration layer 1 and the non-vibration layer 2, and an integrated effect will be formed from the visual inspection of the client. Due to the increase in the overall visibility of the microstructure 22, the diameter of the microstructure 22 can be increased from the traditional 20um to 100um~200um, the structural strength is improved, the pressure on the structural support surface is reduced, and the reliability is greatly enhanced. During implementation, the height of the microstructure 22 is 30um~100um, the diameter is 100um~200um, and the center distance between two adjacent microstructures 22 is 3mm~3.2mm.

[0060] In addition, combined Figure 3~Figure 5 As shown, in order to fill and form the second edge trace 24, the second UTG substrate layer 21 is further etched by the TGV process on at least one edge of the surface close to the vibration layer 1 to form a third groove 26. Similarly, it is preferred to sharpen the edge of the third groove 26 to prevent the light and shadow from being visible due to the right-angle corner.

[0061] The second conductive layer 23 is formed on the end face of the second UTG substrate layer 21 close to the vibration layer 1 and at least covers the area on the surface of the second UTG substrate layer 21 except the microstructure 22. In specific implementation, the thickness of the second conductive layer 23 is generally less than 100nm, and the square resistance is 70Ω~100Ω, similar to the first conductive layer 12. And during preparation, the second conductive layer 23 can also be formed by plating indium tin oxide ITO using a magnetron sputtering process. In addition, in order to prevent ITO magnetron sputtering on the top and sides of the microstructure 22, when magnetron sputtering is required, MARSK is performed, and ITO magnetron sputtering is performed locally. Since the corners of the third groove 26 are sharpened and etched or micro-grinded, the ITO is continuous inside and outside the third groove 26, which can fully ensure that the overlap area between the second edge wiring 24 and the ITO is maximized, thereby reducing the overall load resistance of the device, reducing the load power of the device, and ensuring maximum efficiency.

[0062] The second edge wiring 24 is formed on at least one edge of the surface of the second conductive layer 23 close to the vibration layer 1, corresponding to the first edge wiring 13. In implementation, the second edge wiring 24 can be directly formed on the edge of the second conductive layer 23. Or preferably, the third groove 26 covered with the second conductive layer 23 is filled with metal (such as silver paste) to form the second edge wiring 24. The structure and processing technology of the second edge wiring 24 can refer to the description of the first edge wiring 13, which will not be described here.

[0063] In addition, pre-selectedly, an edge insulating layer 27 covering the second edge wiring 24 is also provided on at least one edge of the surface of the second conductive layer 23 close to the vibration layer 1. In implementation, the thickness of the edge insulating layer 27 is less than or equal to 5um, and the width is slightly larger than the width of the second edge wiring 24, so as to completely cover the second edge wiring 24. Of course, an edge insulating layer 27 may also be added on the second edge wiring 24, or, like the vibration layer 1, the second conductive layer 23 may also be covered with an insulating layer on the entire surface (not shown in the figure), and the present invention does not limit this, as long as the conductive layer of the vibration layer 1 and the conductive layer of the non-vibration layer 2 can be reliably insulated and isolated.

[0064] The second hardened buffer layer 25 is formed on the lower end surface of the second UTG substrate layer 21 away from the vibration layer 1, mainly for protection. When implemented, its thickness is generally set to 2um~4um. The structure and processing technology of the second hardened buffer layer 25 can refer to the description of the first hardened buffer layer 15 above, which will not be described here.

[0065] The frame of the vibration layer 1 and the non-vibration layer 2 fit together, and the microstructure 22 on the non-vibration layer 2 is correspondingly embedded in the groove on the vibration layer 1, that is, the microstructure 22 on the non-vibration layer 2 and the first groove 17 on the vibration layer 1 are nested, and the microstructure 22 is partially nested in the first groove 17 to form a stable structure, so that the vibration layer 1 will not be separated from the microstructure 22 during the vibration process, and the distortion can be reduced to less than 10%, and it is stable. In addition, since the height of the microstructure 22 is greater than the depth of the first groove 17, an air gap 3 required for the vibration layer 1 to vibrate up and down can be formed between the vibration layer 1 and the non-vibration layer 2 through the microstructure 22, and the height of the air gap 3 is the difference between the height of the microstructure 22 and the depth of the first groove 17 and the thickness of the second conductive layer 23. In addition, more preferably, the microstructure 22 is also embedded and fixed in the first groove 17 of the vibration layer 1 through a viscous colloid, further increasing the nesting stability of the microstructure 22 and the first groove 17. During implementation, before the first groove 17 of the vibration layer 1 is nested with the microstructure 22 of the non-vibration layer 2, a viscous colloid with a certain height and not fully cured is screen-printed in the first groove 17 by vacuum screen printing. After the first groove 17 of the vibration layer 1 and the microstructure 22 are nested and bonded, the photocured viscous colloid makes the microstructure 22 firmly nested in the first groove 17 of the vibration layer 1. The present invention wraps the microstructure 22 with a viscous colloid in an annular wall type. Compared with the traditional bonding method: a 3D printing bonding layer is placed on the top of the microstructure 22 and the bonding area is small, the annular wall type viscous colloid here has a large bonding area, which can improve the overall reliability of the product.

[0066] In a specific embodiment, the thickness of the first UTG substrate layer 11 of the vibration layer 1 is 50, the depth of the first groove 17 is 20um, the thickness of the first insulating layer 14 is 10um, the thickness of the first hardened buffer layer 15 is 25um, the thickness of the optical film layer 16 is 1um, the thickness of the second UTG substrate layer 21 is 30um, the height of the microstructure 22 is 39um, the thickness of the first conductive layer 12 and the second conductive layer 23 are both 50nm~70nm, the square resistance is both 70Ω~100Ω, the center distance between two adjacent microstructures 22 is 3mm~3.2mm, and the thickness of the second hardened buffer layer 25 is 4um. Under the action of 300V DC bias voltage + 200V AC voltage, its 1kHz sound pressure can reach 72db~75db, and the product area is 12~16 inches.

[0067] During implementation, the TGV process can be implemented in a variety of ways, such as the relatively mature laser induced etching method, which is not simply based on liquid etching, and its accuracy can reach ±1um. The existing microstructure etching completely relies on controlling the concentration of liquid, immersion time, etc. to control the etching depth, and the accuracy can be up to ±10um. Therefore, compared with the traditional etching process, the microstructure of the present invention is processed by TGV punching technology, which reduces its processing difficulty and realizes easy control of its processing accuracy.

[0068] The present invention also discloses a display device (not shown), including the above-mentioned directional sound-emitting screen. The directional sound-emitting screen can be combined with a display screen to realize directional sound emission of the screen. When combined, it can be directly pasted on the display surface of the display screen or integrated into the interior of the display screen. The present invention does not impose any restrictions on this.

[0069] Combination Figure 6 As shown, the present invention also discloses a preparation process of a directional sound-emitting screen, which mainly includes the following steps:

[0070] S1, preparing a vibration layer 1, said S1 comprising:

[0071] S11 , a plurality of first grooves 17 recessed in a direction away from the non-vibration layer are formed on a surface of the first UTG substrate layer 11 close to the non-vibration layer 2 by etching using a TGV process.

[0072] Preferably, in this step, the edge of the first groove 17 is also sharpened.

[0073] S12, forming a first conductive layer 12 on the surface of the first UTG substrate layer 11 close to the non-vibration layer 2, wherein the first conductive layer 12 at least covers the area on the surface of the first UTG substrate layer 11 except the first groove 17.

[0074] Preferably, in this step, the first conductive layer 12 is formed by a magnetron sputtering process.

[0075] S13 , forming a first insulating layer 14 covering the first conductive layer 12 on the surface of the first conductive layer 12 close to the non-vibration layer 2 .

[0076] Between S12 and S13, a first hardened buffer layer 15 is formed on the upper end surface of the first UTG substrate layer 11 away from the non-vibration layer 2. Preferably, the first hardened buffer layer 15 is formed by magnetron sputtering and annealing of the first conductive layer 12. In addition, an optical film layer 16 is formed on the upper end surface of the first hardened buffer layer 15 away from the non-vibration layer 2. And a first edge trace 13 is formed on at least one edge of the surface of the first conductive layer 12 close to the non-vibration layer 2.

[0077] Among them, the structure and preparation process of the first UTG substrate layer 11, the first conductive layer 12, the first edge wiring 13, the first insulating layer 14, the first hardened buffer layer 15 and the optical film layer 16 in the vibration layer 1 can refer to the description in the above-mentioned directional sound screen, and will not be repeated here.

[0078] S2, preparing a non-vibration layer 2, said S2 comprising:

[0079] S21 , a microstructure 22 is integrally formed on the surface of the second UTG substrate layer 21 close to the vibration layer 1 by a TGV process. The microstructure 22 is a protruding structure protruding toward the vibration layer 1 and its height is greater than the depth of the first groove 17 .

[0080] S22 , forming a second conductive layer 23 on the surface of the second UTG substrate layer 21 close to the vibration layer 1 , wherein the second conductive layer 23 at least covers the area on the surface of the second UTG substrate layer 21 except the microstructure 22 .

[0081] In addition, the S2 may also include: S23, forming a second hardened buffer layer 25 on the lower end surface of the second UTG substrate layer 21 away from the vibration layer 1. During implementation, the second hardened buffer layer 25 can be integrally formed through a printing or coating process, and preferably, the second hardened buffer layer 25 is formed after magnetron sputtering and annealing of the second conductive layer 23.

[0082] In addition, between S22 and S23 , a second edge wiring 24 is formed on at least one edge of the surface of the second conductive layer 23 close to the vibration layer 1 .

[0083] Among them, the structures and preparation processes of the second UTG substrate layer 21 of the non-vibration layer 2, multiple microstructures 22, the second conductive layer 23, the second edge wiring 24 and the second hardened buffer layer 25 can refer to the description in the above-mentioned directional sound screen and will not be repeated here.

[0084] S3, fit the frames of the vibration layer 1 and the non-vibration layer 2 together, after which the microstructure 22 on the non-vibration layer 2 is correspondingly embedded in the first groove 17 on the vibration layer 1, and an air gap 3 required for the vibration layer 1 to vibrate up and down is formed between the vibration layer 1 and the non-vibration layer 2 through the microstructure 22.

[0085] Specifically, the S3 includes: filling the first groove 17 of the vibration layer 1 with an uncured viscous colloid (such as a Prime adhesive layer, not shown); aligning the vibration layer 1 and the non-vibration layer 2 by a bonding machine (not shown), and the microstructure 22 is correspondingly embedded in the first groove 17 and wrapped by the viscous colloid, and then applying a DC bias voltage between the vibration layer 1 and the non-vibration layer 2 to remove bubbles, and curing the viscous colloid during the DC bias voltage application (such as UV curing), so that the viscous colloid and the microstructure 22 are fully bonded and cured, and then the frame is filled with colloid and sealed to achieve bonding between the vibration layer 1 and the non-vibration layer 2, and finally the voltage is removed to form. During implementation, the viscous colloid can be formed by vacuum silk screen printing or 3D printing process; and / or, the above-mentioned DC bias voltage is greater than the DC bias voltage applied to the directional sound screen during operation, and is less than the sum of the voltages applied to the directional sound screen. For example, if the starting voltage is 300V DC bias voltage plus 200V AC voltage, the debubbling voltage can be set to 300V to 400V DC voltage. The advantage is that it ensures that the gas sealed between the vibration layer 1 and the non-vibration layer 2 will not cause internal bubbling due to the difference in internal and external pressures.

[0086] The advantages of the present invention are as follows: 1. The present invention uses TGV punching technology to form grooves and microstructures on the ultra-thin glass UTG of the vibration layer and the non-vibration layer respectively, and the microstructure is embedded in the groove to form a stable structure. The microstructure is processed by TGV punching technology and combined with the nested structure of the groove on the vibration layer, and its height can be between 30um and 100um, which reduces its processing difficulty and realizes easy control of its processing accuracy, and the easy control accuracy is between ±1um. 2. The present invention preferably fills the edge routing into the groove formed on the UTG. Compared with the existing direct processing on the UTG, while improving the conductive performance of the existing edge routing, it can also further reduce its width, realizing the extremely narrow frame of the directional sound screen, thereby meeting the market demand for extremely narrow frame products. 3. The present invention fixes the microstructure and the groove by a viscous colloid, which increases the lamination stability between the vibration layer and the non-vibration layer, so that the vibration layer will not be separated from the microstructure during the vibration process, and the distortion can be reduced to less than 10%, thereby improving the overall reliability of the product. 4. The present invention directly integrally forms the microstructure from UTG, and fills the groove that cooperates with the microstructure with a viscous colloid that can eliminate the light and shadow of the groove, thereby increasing the visibility of the entire microstructure and realizing visual inspection from the client side, which will form an integrated effect; in addition, since the diameter of the microstructure in this solution can be increased from the traditional 20um to 100um~200um, the structural strength is improved, which greatly enhances the reliability of the product.

[0087] The foregoing description of specific exemplary embodiments of the present invention is for the purpose of illustration and demonstration. These descriptions are not intended to limit the present invention to the precise form disclosed, and it is clear that many changes and variations can be made based on the above teachings. The purpose of selecting and describing the exemplary embodiments is to explain the specific principles of the present invention and its practical application, so that those skilled in the art can realize and utilize various different exemplary embodiments of the present invention and various different selections and changes. The scope of the present invention is intended to be limited by the claims and their equivalents.

Claims

1. A directional sound screen, characterized in that: include: A vibration layer, wherein the vibration layer comprises a first UTG substrate layer, a first conductive layer and a first insulating layer, a surface of the first UTG substrate layer close to the non-vibration layer is etched by a TGV process to form a plurality of first grooves recessed in a direction away from the non-vibration layer, the first conductive layer is formed on the surface of the first UTG substrate layer close to the non-vibration layer and covers the area on the surface of the first UTG substrate layer except the first grooves, and the first insulating layer is formed on the surface of the first conductive layer close to the non-vibration layer and covers the first conductive layer; A non-vibration layer, the non-vibration layer comprising a second UTG substrate layer, a plurality of microstructures and a second conductive layer, the microstructures being integrally formed on a surface of the second UTG substrate layer close to the vibration layer by a TGV process, the microstructures being convex structures protruding toward the vibration layer and having a height greater than a depth of the first groove, the second conductive layer being formed on a surface of the second UTG substrate layer close to the vibration layer and covering an area on the surface of the second UTG substrate layer except for the microstructures; The vibration layer fits the frame of the non-vibration layer, and the microstructure on the non-vibration layer is correspondingly embedded in the first groove on the vibration layer. An air gap required for the vibration layer to vibrate up and down is formed between the vibration layer and the non-vibration layer through the microstructure.

2. A directional sound screen as claimed in claim 1, characterized in that: The vibration layer further includes a first edge trace, the first edge trace is directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the second groove is covered with the first conductive layer, and the second groove is filled with metal to form the first edge trace; And / or, the non-vibration layer further includes a second edge routing, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with a second conductive layer, and the third groove is filled with metal to form the second edge routing; Alternatively, the non-vibration layer also includes a second edge routing and an edge insulating layer, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, the third groove is filled with metal to form the second edge routing, and the edge insulating layer is formed on at least one edge of the surface of the second conductive layer close to the vibration layer and covers the second edge routing.

3. A directional sound screen as claimed in claim 2, characterized in that: When directly formed on the edge of the corresponding conductive layer, the height of the first edge line and the second edge line is less than or equal to 5um, and the width is less than 1mm; when filled in the groove, the height of the first edge line and the second edge line are both greater than the depth of the corresponding groove, and the width of the part above the groove is also greater than the width of the corresponding groove; and / or, when filled in the groove, the height of the first edge line and the second edge line is greater than or equal to 5 um, and the width of the part thereof protruding from the groove is less than 1 mm; And / or, the thickness of the edge insulation layer is less than or equal to 5 um, and the width is greater than the width of the second edge wiring; And / or, the second groove and the third groove are also formed by etching through a TGV process.

4. A directional sound screen as claimed in claim 1, characterized in that: The microstructure is also embedded and fixed in the first groove of the vibration layer by a viscous colloid; and / or the viscous colloid is arranged in the first groove, and / or the microstructure is embedded in the first groove and wrapped by the viscous colloid before the viscous colloid is cured, and the viscous colloid is cured after embedding.

5. A directional sound screen as claimed in claim 1, characterized in that: The vibration layer further includes a first hardened buffer layer and an optical film layer, wherein the first hardened buffer layer is formed on the upper end surface of the first UTG substrate layer away from the non-vibration layer, and the optical film layer is formed on the upper end surface of the first hardened buffer layer away from the non-vibration layer; And / or, the non-vibration layer further includes a second hardened buffer layer, and the second hardened buffer layer is formed on a lower end surface of the second UTG substrate layer away from the vibration layer.

6. A directional sound screen as claimed in claim 5, characterized in that: The thickness of the first hardened buffer layer is 15um-25um, and / or the thickness of the optical thin film layer is 1um-5um; and / or the thickness of the second hardened buffer layer is 2um-4um.

7. A directional sound screen as claimed in claim 2, characterized in that: The thickness of the first UTG substrate layer is 50um~100um, and / or the depth of the first groove is 20um~70um, and the diameter is 20um~100um, and / or the thickness of the first conductive layer is less than 100nm, and the square resistance is 70Ω~100Ω, and / or the thickness of the first insulating layer is 6um~15um, and / or the thickness of the second UTG substrate layer is more than 30um, and / or the height of the microstructure is 30um~100um, the diameter is 100um~200um, and the center distance between two adjacent microstructures is 3mm~3.2mm, and / or the thickness of the second conductive layer is less than 100nm, the square resistance is 70Ω~100Ω, and / or the height of the air gap is 5um~15um.

8. A display device, characterized in that: The display device comprises the directional sound screen as described in any one of claims 1 to 7 above.

9. A process for preparing a directional sound screen, characterized in that: The process comprises: S1, preparing a vibration layer, said S1 comprising: S11, etching a surface of the first UTG substrate layer close to the non-vibration layer by a TGV process to form a plurality of first grooves recessed in a direction away from the non-vibration layer; S12, forming a first conductive layer on the surface of the first UTG substrate layer close to the non-vibration layer, wherein the first conductive layer covers the area on the surface of the first UTG substrate layer except the first groove; S13, forming a first insulating layer covering the first conductive layer on a surface of the first conductive layer close to the non-vibration layer; S2, preparing a non-vibration layer, said S2 comprising: S21, forming a microstructure on a surface of the second UTG substrate layer close to the vibration layer by a TGV process, wherein the microstructure is a protruding structure protruding toward the vibration layer and having a height greater than a depth of the first groove; S22, forming a second conductive layer on the surface of the second UTG substrate layer close to the vibration layer, wherein the second conductive layer covers the area on the surface of the second UTG substrate layer except for the microstructure; S3, bonding the frames of the vibration layer and the non-vibration layer together, after bonding, the microstructure on the non-vibration layer is correspondingly embedded in the first groove on the vibration layer, and an air gap required for the vibration layer to vibrate up and down is formed between the vibration layer and the non-vibration layer through the microstructure.

10. The process for preparing a directional sound screen according to claim 9, characterized in that: In S11, the edge of the first groove is also sharpened; and / or, in S12, the first conductive layer is formed by a magnetron sputtering process; and / or, between S12 and S13, a first hardened buffer layer is formed on the upper end surface of the first UTG substrate layer away from the non-vibration layer; and / or, the first hardened buffer layer is formed by magnetron sputtering and annealing of the first conductive layer; and / or, the first hardened buffer layer is integrally formed by a printing or coating process; and / or, between S12 and S13, an optical film layer is formed on the upper end surface of the first hardened buffer layer away from the non-vibration layer; and / or, between S12 and S13 The present invention also includes forming a first edge routing on at least one edge of the surface of the first conductive layer close to the non-vibration layer; and / or, the first edge routing is directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the second groove is covered with the first conductive layer, and the second groove is filled with metal to form the first edge routing; and / or, the first insulating layer is formed by coating or exposure development or printing process; and / or, the second groove is also formed by etching by TGV process, and / or, the edge of the second groove is also sharpened.

11. The process for preparing a directional sound screen according to claim 9, characterized in that: The S2 also includes: S23, forming a second hardened buffer layer on the lower end surface of the second UTG substrate layer away from the vibration layer; and / or, the second hardened buffer layer is formed by processing after the second conductive layer is magnetron sputtered and annealed; and / or, the second hardened buffer layer is integrally formed by a printing or coating process; and / or, between S22 and S23, it also includes forming a second edge routing on at least one edge of the surface of the second conductive layer close to the vibration layer; and / or, the second edge routing is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge routing; and / or, the third groove is also formed by etching through a TGV process, and / or, the edge of the third groove is also sharpened; and / or, S2 also includes forming an edge insulation layer covering the second edge routing on at least one edge of the surface of the second conductive layer close to the vibration layer.

12. The process for preparing a directional sound screen according to claim 9, characterized in that: The S3 includes: filling the first groove of the vibration layer with an uncured viscous colloid; bonding the vibration layer and the non-vibration layer in a phase-aligned manner by a bonding machine, and the microstructure is correspondingly embedded in the first groove and wrapped by the viscous colloid, and then a DC bias voltage is applied between the vibration layer and the non-vibration layer to remove bubbles, and the viscous colloid is solidified during the process of applying the DC bias voltage to achieve bonding between the vibration layer and the non-vibration layer; and / or, the viscous colloid is formed by vacuum silk screen printing or 3D printing technology; and / or, the DC bias voltage is greater than the DC bias voltage applied to the directional sound screen during operation, and is less than the total voltage applied to the directional sound screen.

Citation Information

Patent Citations

  • Low-polarization directional sound production screen and preparation process thereof

    CN118678282A