Image sensor comprising plurality of pixels and at least one lens

By introducing a 2×2 matrix arrangement of pixel groups and device isolation patterns into the pixel array of the image sensor, the problem of signal interference during the automatic focusing of the image sensor is solved, and higher image quality and automatic focusing performance are achieved.

CN119450251APending Publication Date: 2025-02-14SAMSUNG ELECTRONICS CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
CN202411031009.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-08-02
Filing Date
2024-07-30
Publication Date
2025-02-14

AI Technical Summary

Technical Problem

During the automatic focusing process, existing image sensors have deteriorated performance due to signal interference between photodiodes of adjacent pixels, which affects image quality.

Method used

An image sensor is designed to reduce signal interference by introducing pixel groups arranged in a 2×2 matrix into the pixel array and electrically isolating each pixel group using a device isolation pattern. The readout circuit is configured to output phase data and image data based on the phase signal and the color signal.

Benefits of technology

Signal interference between phase signals and color signals is significantly reduced, and the autofocus performance and image quality of the image sensor are improved.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119450251A_ABST
    Figure CN119450251A_ABST
Patent Text Reader

Abstract

An image sensor is provided. The image sensor includes: a first pixel group including a first pixel, a second pixel, a third pixel, and a fourth pixel; a second pixel group including a fifth pixel, a sixth pixel, a seventh pixel, and an eighth pixel, in which the second pixel group is disposed adjacent to the first pixel group in the first direction; a first lens corresponding to the first pixel and the second pixel; a second lens corresponding to the third pixel and the fourth pixel; a device isolation pattern electrically isolating the first pixel group from the second pixel group; and a readout circuit configured to: output phase data based on at least a portion of the phase signals received from the first pixel group; and outputting image data based on at least a portion of the color signals received from the second pixel group.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0101232 filed in the Korean Intellectual Property Office on August 2, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more example embodiments relate to an image sensor including a plurality of pixels and at least one lens. Background Art

[0004] The semiconductor-based sensor may be configured as an image sensor that generates an electrical signal based on received light, and may include a pixel array having a plurality of unit pixels and a circuit for driving the pixel array and generating an image. The plurality of unit pixels may include a photodiode that generates a charge in response to external light.

[0005] However, the performance of the image sensor may be degraded due to signal interference between photodiodes of adjacent pixels. Deep trench isolation (DTI) may be formed between multiple photodiodes to prevent crosstalk.

[0006] Autofocus (AF) has been actively used in the field of image sensors. Autofocus is a function of automatically adjusting a lens to focus on a subject based on a phase difference between signals received from at least two pixels.

[0007] Recently, DTI is not formed in the portion between unit pixels, so that signal interference may occur between the photodiode for autofocus and the adjacent diode. As a result, the performance of the autofocus of the image sensor may be reduced. In addition, the quality of the image generated by the image sensor may be reduced. Summary of the invention

[0008] One or more example embodiments provide an image sensor that significantly reduces signal interference between a phase signal received for auto-focusing and a color signal received for image generation.

[0009] According to one aspect of an example embodiment, an image sensor includes: a first pixel group, which includes a first pixel, a second pixel, a third pixel and a fourth pixel arranged in a 2×2 matrix; a second pixel group, which includes a fifth pixel, a sixth pixel, a seventh pixel and an eighth pixel arranged in a 2×2 matrix, wherein the second pixel group is set to be adjacent to the first pixel group in a first direction; a first lens, which corresponds to the first pixel and the second pixel; a second lens, which corresponds to the third pixel and the fourth pixel; a device isolation pattern, which electrically isolates the first pixel group from the second pixel group; and a readout circuit, which is configured to: output phase data based on at least a portion of a phase signal received from the first pixel group; and output image data based on at least a portion of a color signal received from the second pixel group.

[0010] According to one aspect of an example embodiment, an image sensor includes: a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group provided in a 2×2 matrix, each pixel group including pixels arranged in a 2×2 matrix; a fifth pixel group including pixels arranged in a 2×2 matrix and disposed adjacent to the fourth pixel group; and a readout circuit configured to: in a first mode, output phase data based on a first phase signal and a second phase signal obtained from at least a portion of pixel signals of the first pixel group; and in a second mode, output phase data based on a third phase signal obtained from at least a portion of pixel signals of the first pixel group and a fourth phase signal obtained from at least a portion of pixel signals of the fifth pixel group.

[0011] According to one aspect of an example embodiment, an image sensor includes: a first pixel group having a first pixel, a second pixel, a third pixel, and a fourth pixel arranged in a 2×2 matrix; a second pixel group having a fifth pixel, a sixth pixel, a seventh pixel, and an eighth pixel arranged in a 2×2 matrix, wherein the second pixel group is disposed adjacent to the first pixel group; a first lens corresponding to at least two pixels of the pixels of the first pixel group and the second pixel group; a device isolation pattern electrically separating the pixels of the first pixel group and the pixels of the second pixel group from each other; and a readout circuit electrically connected to a plurality of pixels. The device isolation pattern includes a plurality of portions electrically separating the first pixel, the second pixel, the third pixel, and the fourth pixel from each other. Each of the plurality of portions is spaced apart from the center of the first pixel group. The readout circuit is configured to: output phase data based on at least a portion of a phase signal corresponding to the first lens; and output image data based on a color signal received from a pixel of the plurality of pixels that is offset from the first lens. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other aspects, features and advantages will become more apparent from the following description of example embodiments with reference to the accompanying drawings.

[0013] Figure 1is a block diagram of an image sensor according to example embodiments.

[0014] Figure 2A is a diagram showing a method according to an example embodiment Figure 1 Schematic diagram of an example of a pixel array 110 .

[0015] Figure 2B According to an example embodiment Figure 2A A cross-sectional view of a portion of a pixel array taken along line AA'.

[0016] Figure 3 is a diagram showing a method according to an example embodiment Figure 2A 1 is a circuit diagram of an example of a first pixel group of a pixel array.

[0017] Figure 4A is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens and a second lens corresponding to pixels included in a first pixel group of a pixel array.

[0018] Figure 4B is a diagram showing a structure according to another exemplary embodiment Figure 2A Schematic diagram of a first lens and a second lens corresponding to pixels included in a first pixel group of a pixel array.

[0019] Figure 5 According to an example embodiment Figure 4B A portion of the pixel array along line BB'

[0020] Cut cross-section view.

[0021] Fig. 6A 2 is a diagram illustrating first to fourth lenses formed to correspond to pixels included in first and fifth pixel groups of a pixel array according to example embodiments.

[0022] Figure 6B 2 is a diagram illustrating first to fourth lenses formed to correspond to pixels included in first and fifth pixel groups of a pixel array according to example embodiments.

[0023] Fig. 7A is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens corresponding to pixels included in a first pixel group of a pixel array.

[0024] Figure 7B is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens corresponding to pixels included in a first pixel group of a pixel array.

[0025] Fig. 8Ais a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to two pixels included in different pixel groups of a pixel array.

[0026] Figure 8B is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to two pixels included in different pixel groups of a pixel array.

[0027] Fig.9A is a diagram showing a structure formed with Figure 2A FIG. 1 is a diagram illustrating a first lens and a second lens corresponding to two pixels included in different pixel groups of a pixel array.

[0028] Fig. 9B is a diagram showing a structure formed with Figure 2A FIG. 1 is a diagram illustrating a first lens and a second lens corresponding to two pixels included in different pixel groups of a pixel array.

[0029] Fig.10 is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram of a first lens corresponding to four pixels included in two different pixel groups of a pixel array.

[0030] Fig.11 is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to four pixels included in four different pixel groups of a pixel array. DETAILED DESCRIPTION

[0031] Hereinafter, example embodiments will be described with reference to the accompanying drawings. Throughout the specification, identical parts are represented by identical reference numerals, and repeated descriptions thereof are omitted. It should be understood that when an element or layer is referred to as "on another element or layer", "connected to another element or layer" or "coupled to another element or layer", it can be directly on another element or layer, directly connected to another element or layer or directly coupled to another element or layer, or there can be an intermediate element or layer. On the contrary, when an element is referred to as "directly on another element or layer", "directly connected to another element or layer" or "directly coupled to another element or layer", there is no intermediate element or layer. The embodiments described herein are example embodiments, and therefore, the present disclosure is not limited thereto, and the embodiments described herein can be realized in various other forms. Each example embodiment provided in the following description does not exclude association with one or more features of another example or another embodiment that is also provided herein or not provided herein but consistent with the present disclosure.

[0032] Figure 1 is a block diagram of an image sensor according to example embodiments.

[0033] Reference Figure 1 , the image sensor 100 may include a pixel array 110 , a row driver 120 , an analog-to-digital converter (ADC) 130 , a readout circuit 140 , a timing controller 150 , and an image signal processor 160 .

[0034] According to example embodiments, the pixel array 110 may include a plurality of unit pixels 112. In addition, the pixel array 110 may include a plurality of pixel groups, each of the plurality of pixel groups including one of the plurality of unit pixels 112. For example, each of the plurality of pixel groups may include at least two unit pixels 112 sharing the same micro lens ML.

[0035] The pixel array 110 may receive pixel driving signals such as a reset signal RS, a transmission signal TS, and a selection signal SEL from the row driver 120. The pixel array 110 may operate under the control of the received pixel driving signals, and each of the plurality of unit pixels 112 may convert an optical signal into an analog signal. The analog signal generated by each of the unit pixels 112 may be provided to the analog-to-digital converter 130 through a plurality of column lines CLm. In this case, the analog signal generated by each of the unit pixels 112 may indicate image information and phase information.

[0036] In example embodiments, at least a portion of the plurality of unit pixels 112 may include a shared pixel structure in which a plurality of photodiodes PD share a single floating diffusion node FD. However, this is merely an example, and each of the plurality of unit pixels 112 may include a different floating diffusion node FD.

[0037] The row driver 120 may select a single row of the pixel array 110 under the control of the timing controller 150. The row driver 120 may generate a selection signal SEL to select a single row among a plurality of rows. In addition, the row driver 120 may enable a reset signal RS and a transmission signal TS for pixels corresponding to the selected row in a predetermined order.

[0038] The analog-to-digital converter 130 may receive a reset level signal and a sensing signal generated from each of a selected row of pixels. The reset level signal may be an analog signal corresponding to a reference voltage at a floating diffusion node, and the sensing signal may be an analog signal corresponding to a signal voltage at the floating diffusion node.

[0039] The analog-to-digital converter 130 may convert the reset level signal and the sensing signal into digital signals, and then may output the digital signals. For example, the analog-to-digital converter 130 may sample the reset level signal and the sensing signal in a correlated double sampling scheme, and then may convert the sampled signals into digital signals. To this end, a correlated double sampler (CDS) may also be provided before the analog-to-digital converter 130.

[0040] The readout circuit 140 may latch and output the column-based digital signal provided by the analog-to-digital converter 130. To this end, the readout circuit 140 may include an output buffer.

[0041] In addition, the readout circuit 140 may include an image data generator 141 and a phase data generator 142 .

[0042] According to example embodiments, the image data generator 141 may generate image data IDAT based on digital signals received from a plurality of pixels included in the pixel array 110 .

[0043] For example, the image data generator 141 may generate the image data IDAT by synthesizing digital signals received from a plurality of pixels included in the pixel array 110 .

[0044] For example, the image data generator 141 may receive a first digital signal corresponding to pixels arranged on the left side of a single pixel group and a second digital signal corresponding to pixels arranged on the right side of a single pixel group. The first digital signal and the second digital signal may each include image information and phase information.

[0045] The image data generator 141 may generate the image data IDAT by combining the first digital signal and the second digital signal. In this case, the phase information of the first digital signal DS1 and the phase information of the second digital signal DS2 may cancel each other.

[0046] According to example embodiments, the phase data generator 142 may receive digital signals corresponding to at least two pixels included in each of a plurality of pixel groups.

[0047] For example, the phase data generator 142 may receive a digital signal corresponding to at least two pixels sharing a microlens among pixels included in each of a plurality of pixel groups.

[0048] For example, the phase data generator 142 may receive a digital signal corresponding to a pixel located on the left side of at least two pixels of the pixel group, and may bin the received digital signal to extract the first phase information. In this case, the digital signal corresponding to the pixel located on the left side of the at least two pixels may be referred to as a "first phase signal".

[0049] In addition, the phase data generator 142 may receive a digital signal corresponding to a pixel disposed on the right side among at least two pixels of the pixel group, and may merge the received digital signals to extract the second phase information. In this case, the digital signal corresponding to the pixel disposed on the right side among the at least two pixels may be referred to as a "second phase signal".

[0050] The phase data generator 142 may generate the phase data PDAT based on the first phase information and the second phase information. For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal with the second phase signal.

[0051] The timing controller 150 may control at least a portion of the pixel array 110 , the row driver 120 , the analog-to-digital converter (ADC) 130 , and the readout circuit 140 .

[0052] For example, the timing controller 150 may provide control signals such as clock signals and timing control signals to operations of the pixel array 110 , the row driver 120 , the analog-to-digital converter (ADC) 130 , and the readout circuit 140 .

[0053] The timing controller 150 may include a logic control circuit, a phase-locked loop (PLL) circuit, a timing control circuit, and a communication interface circuit.

[0054] According to example embodiments, the image sensor 100 may include an image signal processor (ISP) 160 connected to the readout circuit 140. According to example embodiments, the image signal processor 160 may be implemented as a chip separate from the image sensor 100.

[0055] The image signal processor 160 may process the phase data PDAT and the image data IDAT provided from the readout circuit 140 .

[0056] For example, the image signal processor 160 may perform auto focusing (AF) based on the phase data PDAT received from the readout circuit 140 to measure focus on a subject.

[0057] In addition, the image signal processor 160 may generate an image for the object based on the image data IDAT received from the readout circuit 140 .

[0058] Figure 2A It is shown Figure 1 A diagram of an example of a pixel array 110, and Figure 2B yes Figure 2A A cross-sectional view of a portion of a pixel array taken along line AA'. Figure 3 It is shown Figure 2A 1 is a circuit diagram of an example of a first pixel group of a pixel array.

[0059] Refer to Figure 2A and Figure 2B , the pixel array 110 according to example embodiments may include a plurality of pixels PX1 to PX16 and a device isolation pattern 330 electrically separating the plurality of pixels. In this case, the plurality of pixels PX1 to PX16 may be understood as being Figure 1Corresponding to the unit pixel 112.

[0060] Reference Figure 2A , the pixel array 110 may include a first pixel group 311 , a second pixel group 312 , a third pixel group 313 , and a fourth pixel group 314 , each pixel group including pixels arranged in a 2×2 matrix.

[0061] For example, the pixel array 110 may include a first pixel group 311 including first to fourth pixels PX1 to PX4 arranged in a 2×2 matrix. In addition, the pixel array 110 may include a second pixel group 312 including fifth to eighth pixels PX5 to PX8 arranged in a 2×2 matrix. In addition, the pixel array 110 may include a third pixel group 313 including ninth to twelfth pixels PX9 to PX12 arranged in a 2×2 matrix. In addition, the pixel array 110 may include a fourth pixel group 314 including thirteenth to sixteenth pixels PX13 to PX16 arranged in a 2×2 matrix.

[0062] The first to fourth pixel groups 311 to 314 may be arranged in a 2×2 matrix to form the pixel array 110. Thus, for example, the pixel array 110 may include 16 pixels arranged in a 4×4 matrix, but example embodiments are not limited thereto.

[0063] Refer to Figure 1 and Figure 2A , the image sensor 100 according to the example embodiment may include a plurality of microlenses formed to correspond to at least one of the plurality of pixels PX1 to PX16. For example, the image sensor 100 may include a first microlens formed to correspond to the first pixel PX1 and the second pixel PX2 and a second microlens formed to correspond to the fifth pixel PX5. However, the configuration of the microlens formed to correspond to at least one pixel is not limited to the above example.

[0064] The pixel array 110 may include a device isolation pattern 330 that electrically separates a plurality of pixels.

[0065] For example, the device isolation pattern 330 may include a first isolation pattern 321 that electrically separates the first to fourth pixel groups 311 to 314 .

[0066] According to example embodiments, the device isolation pattern 330 may include a plurality of portions 331, 332, 333, and 334 extending from the first isolation pattern 321 to electrically separate a plurality of pixels. The device isolation pattern 330 may be formed between pixels included in the first pixel group 311 and may include the plurality of portions 331, 332, 333, and 334 to electrically separate the first to fourth pixels PX1 to PX4.

[0067] In this case, the plurality of portions 331, 332, 333, and 334 may include a first portion 331 extending from the first isolation pattern 321 along a second direction (eg, a positive y direction) between the first pixel PX1 and the second pixel PX2. The first pixel PX1 and the second pixel PX2 may be electrically separated from each other by the first portion 331.

[0068] In addition, the plurality of portions 331, 332, 333, and 334 may include a second portion 332 extending from the first isolation pattern 321 in a direction (eg, negative x direction) opposite to the first direction between the second pixel PX2 and the fourth pixel PX4. The second pixel PX2 and the fourth pixel PX4 may be electrically separated from each other by the second portion 332.

[0069] In addition, the plurality of portions 331, 332, 333, and 334 may include a third portion 333 extending from the first isolation pattern 321 in a direction (eg, negative y direction) opposite to the second direction between the third pixel PX3 and the fourth pixel PX4. The third pixel PX3 and the fourth pixel PX4 may be electrically separated from each other by the third portion 333.

[0070] Furthermore, the plurality of portions 331, 332, 333, and 334 may include a fourth portion 334 extending from the first isolation pattern 321 along the first direction (eg, positive x direction) between the third pixel PX3 and the first pixel PX1. The third pixel PX3 and the first pixel PX1 may be electrically separated from each other by the fourth portion 334.

[0071] According to example embodiments, each of the first portion 331 , the second portion 332 , the third portion 333 , and the fourth portion 334 may be formed to be spaced apart from the center C of the first pixel group 311 .

[0072] For example, each of the first portion 331 , the second portion 332 , the third portion 333 , and the fourth portion 334 may be formed to have one end connected to the first isolation pattern 321 and the other end spaced apart from the center C of the first pixel group 311 .

[0073] For example, each of the plurality of portions 331 , 332 , 333 , and 334 may be formed to be spaced apart from the first isolation pattern 321 and the center C of the first pixel group 311 .

[0074] In this case, the device isolation pattern 330 may be formed by, for example, a deep trench isolation (DTI) process, but example embodiments are not limited thereto. Alternatively, the device isolation pattern 330 may be formed by, for example, a shallow trench isolation (STI) process.

[0075] In addition, the device isolation pattern 330 may be formed of, for example, oxide and / or polysilicon.

[0076] The pixel array 110 may include floating diffusion nodes FD1 , FD2 , FD3 , and FD4 electrically connected to a plurality of pixels.

[0077] For example, the pixel array 110 may include first to fourth floating diffusion nodes FD1 to FD4 electrically connected to pixels included in each of the pixel groups 311 , 312 , 313 , and 314 .

[0078] For example, the pixel array 110 may include a first floating diffusion node FD1 electrically connected to the first pixel PX1 to the fourth pixel PX4 included in the first pixel group 311. In addition, the pixel array 110 may include a second floating diffusion node FD2 electrically connected to the fifth pixel PX5 to the eighth pixel PX8 included in the second pixel group 312. In addition, the pixel array 110 may include a third floating diffusion node FD3 electrically connected to the ninth pixel PX9 to the twelfth pixel PX12 included in the third pixel group 313. In addition, the pixel array 110 may include a fourth floating diffusion node FD4 electrically connected to the thirteenth pixel PX13 to the sixteenth pixel PX16 included in the fourth pixel group 314.

[0079] According to example embodiments, the first to fourth floating diffusion nodes FD1 to FD4 may be formed in positions corresponding to the center of each pixel group. For example, the first floating diffusion node FD1 may be formed in a position corresponding to the center C of the first pixel group 311. However, the position where the floating diffusion node is formed is not limited to the above example, and the floating diffusion node may be formed in various positions to be electrically connected to a plurality of pixels.

[0080] According to example embodiments, the first portion 331 , the second portion 332 , the third portion 333 , and the fourth portion 334 may be formed to be spaced apart from the first to fourth floating diffusion nodes FD1 to FD4 , respectively.

[0081] In addition, the device isolation pattern 330 may further include a plurality of portions formed to extend into the second pixel group 312 , the third pixel group 313 , and the fourth pixel group 314 , respectively, and to be isolated from the center of each of the pixel groups 312 , 313 , and 314 .

[0082] In this case, a plurality of portions extending toward the center of each of the pixel groups 312 , 313 , and 314 may also be formed to be spaced apart from the second to fourth floating diffusion nodes FD2 to FD4 , respectively.

[0083] Therefore, the pixel array 110 according to example embodiments may reduce an area for forming a floating diffusion node for each of a plurality of pixels. In addition, the pixel array 110 may reduce interconnections and structures for connecting a plurality of pixels and a floating diffusion node.

[0084] Reference Figure 2B , the pixel array 110 according to example embodiments may include a substrate 210, a color filter 230, a light transmitting layer 220, and an insulating layer 270. In this case, the substrate 210 may include photodiodes PD1 and PD4 corresponding to the plurality of pixels PX1 and PX4, respectively.

[0085] According to example embodiments, the color filter 230 and the light transmitting layer 220 may be sequentially disposed on the surface of the substrate 210. For example, the color filter 230 may be a green color filter in a region corresponding to the first pixel group 311, but example embodiments are not limited thereto.

[0086] The photodiodes PD1 and PD4 may obtain light that has passed through the microlens, the light transmission layer 220 , and the color filter 230 .

[0087] The insulating layer 270 may be disposed under the photodiodes PD1 and PD4 or the substrate 210. For example, the insulating layer 270 may include a plurality of elements 260 and an interconnection pattern 280 connected to the plurality of elements 260. The plurality of elements 260 and the interconnection pattern 280 included in the insulating layer 270 may operate to obtain pixel signals from the plurality of pixels PX1 and PX4.

[0088] According to example embodiments, the first photodiode PD1 corresponding to the first pixel PX1 and the fourth photodiode PD4 corresponding to the fourth pixel PX4 may share the first floating diffusion node FD1 .

[0089] Each of the plurality of elements 260 adjacent to the first floating diffusion node FD1 may be referred to as a transfer transistor. In this case, a gate of the transfer transistor may have a vertical structure in which at least a portion is buried in the substrate 210 .

[0090] The plurality of pixels PX1, PX2, PX3, and PX4 included in the first pixel group 311 may be electrically separated from the plurality of pixels PX5, PX6, PX7, and PX8 included in the second pixel group 312 by the first isolation pattern 321. The device isolation pattern 330 (or the first isolation pattern 321) may be separated to such an extent that charge overflow does not occur between adjacent photodiodes.

[0091] Refer to Figure 2A , Figure 2B and Figure 3According to example embodiments, the first pixel group 311 may include first to fourth pixels PX1 to PX4 that share the first floating diffusion node FD1. In this case, the first and third pixels PX1 and PX3 are disposed at the left side L of the center C, and the second and fourth pixels PX2 and PX4 are disposed at the right side R of the center C.

[0092] Charges generated by each of the first to fourth photodiodes PD1 to PD4 may be transferred to the first floating diffusion node FD1 through the first to fourth transfer transistors TX1 to TX4 .

[0093] In this case, charges generated by each of the first to fourth photodiodes PD1 to PD4 may be sequentially transferred to the first floating diffusion node FD1 by transfer signals TS1 , TS2 , TS3 , and TS4 transmitted from the timing controller 150 to the first to fourth transfer transistors TX1 to TX4 .

[0094] For example, charges generated by the first photodiode PD1 may be transferred to the first floating diffusion node FD1 according to the first transfer signal TS1 transmitted to the first transfer transistor TX1 .

[0095] In addition, the charges accumulated in the first floating diffusion node FD1 may be transferred to the drive transistor DX and then may be output as the output voltage Vout through the selection transistor SX.

[0096] The charges stored in the first floating diffusion node FD1 may be reset in response to a reset signal RS transmitted from the timing controller 150 to the reset transistor RX.

[0097] Charges generated by the second photodiode PD2 may be transferred to the first floating diffusion node FD1 according to a second transfer signal TS2 transmitted to the second transfer transistor TX2 .

[0098] Therefore, the image sensor 100 according to example embodiments may reduce the cost and area consumed in implementing a floating diffusion node for each unit pixel 112 .

[0099] Furthermore, the image sensor 100 according to example embodiments may improve the resolution of the image data IDAT generated by the readout circuit 140 .

[0100] Figure 4A is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens and a second lens corresponding to pixels included in a first pixel group of a pixel array. Figure 4B is a diagram showing a structure according to another exemplary embodiment Figure 2ASchematic diagram of a first lens and a second lens corresponding to pixels included in a first pixel group of a pixel array. Figure 5 yes Figure 4B A cross-sectional view of a portion of a pixel array taken along line BB'.

[0101] Reference Figure 4A and Figure 4B , the image sensors 100A and 100B according to example embodiments may include lenses formed to correspond to two adjacent pixels among a plurality of pixels included in the pixel array 110 .

[0102] For example, each of the image sensors 100A and 100B may include lenses formed to correspond to two adjacent pixels among a plurality of pixels included in the first pixel group 311 .

[0103] Reference Figure 4A , the image sensor 100A may include a first lens 411A and a second lens 412A formed to correspond to two pixels adjacent to each other in a first direction (eg, x direction) among pixels included in the first pixel group 311 .

[0104] For example, the image sensor 100A may include a first lens 411A formed to correspond to the first pixel PX1 and the second pixel PX2 of the first pixel group 311 and a second lens 412A formed to correspond to the third pixel PX3 and the fourth pixel PX4 of the first pixel group 311 .

[0105] Reference Figure 4B , the image sensor 100B may include a first lens 411B and a second lens 412B formed to correspond to two pixels adjacent to each other in a second direction (eg, y direction) among a plurality of pixels included in the first pixel group 311 .

[0106] For example, the image sensor 100B may include a first lens 411B formed to correspond to the first pixel PX1 and the third pixel PX3 of the first pixel group 311 and a second lens 412B formed to correspond to the second pixel PX2 and the fourth pixel PX4 of the first pixel group 311 .

[0107] The image sensors 100A and 100B may include a plurality of microlenses formed to correspond to each of the pixels except the first pixel PX1 to the fourth pixel PX4 among the plurality of pixels. For example, a corresponding microlens may be provided for each of the plurality of pixels except the first pixel PX1 to the fourth pixel PX4. For example, one microlens may be provided for the fifth pixel PX5, another microlens may be provided for the sixth pixel PX6, another microlens may be provided for the seventh pixel PX7, and yet another microlens may be provided for the eighth pixel PX8.

[0108] Refer to Figure 1 and Figure 4A , the readout circuit 140 according to example embodiments may obtain a phase signal through the first lens 411A, the second lens 412A, and the pixels included in the first pixel group 311 .

[0109] For example, the readout circuit 140 may obtain the first phase signal through the first lens 411A and the first pixel PX1 and / or the second pixel PX2. For example, the readout circuit 140 may obtain the first phase signal through the first lens 411A and the first pixel PX1.

[0110] In addition, the readout circuit 140 may obtain a second phase signal through the second lens 412A and the third pixel PX3 and / or the fourth pixel PX4. For example, the readout circuit 140 may obtain a second phase signal through the second lens 412A and the fourth pixel PX4.

[0111] Refer to Figure 1 and Figure 4B According to example embodiments, the readout circuit 140 may obtain a first phase signal through the first lens 411B and the first pixel PX1 and / or the third pixel PX3. In addition, the readout circuit 140 may obtain a second phase signal through the second lens 412B and the second pixel PX2 and / or the fourth pixel PX4.

[0112] For example, the readout circuit 140 may obtain a first phase signal through the first lens 411B and the third pixel PX3. In addition, the readout circuit 140 may obtain a second phase signal through the second lens 412B and the fourth pixel PX4.

[0113] Furthermore, the readout circuit 140 may output phase data PDAT based on the first phase signal and the second phase signal.

[0114] For example, the phase data generator 142 may compare the first phase signal and the second phase signal. The phase data generator 142 may generate phase data PDAT including a focal distance to the object based on the result of the comparison. In addition, the readout circuit 140 may output the generated phase data PDAT.

[0115] Referring to the above components, the readout circuit 140 can obtain a first phase signal through the first lenses 411A and 411B, and can obtain a second phase signal through the second lenses 412A and 412B. In this case, the first lenses 411A and 411B and the second lenses 412A and 412B can each be formed to correspond to two adjacent pixels among a plurality of pixels arranged in a 2×2 matrix.

[0116] Therefore, the image sensors 100A and 100B according to example embodiments may significantly reduce signal interference between phase signals generated by the first floating diffusion node FD1 within the first pixel group 311 .

[0117] The readout circuit 140 according to example embodiments may operate in a first mode or a second mode based on the intensity of light received through the pixel array 110 .

[0118] For example, when the intensity of light received through the pixel array 110 is greater than a predetermined reference value, the readout circuit 140 may operate in the first mode. When the intensity of light received through the pixel array 110 is less than a predetermined reference value, the readout circuit 140 may operate in the second mode.

[0119] For example, readout circuitry 140 may operate in a first mode in a high-light environment and in a second mode in a low-light environment.

[0120] In the first mode, the readout circuit 140 can receive first color signals respectively assigned to the pixels from the fifth pixel PX5 to the sixteenth pixel PX16 among the plurality of pixels PX1 to PX16. For example, the readout circuit 140 can obtain a red signal through the fifth pixel PX5 and a green signal through the thirteenth pixel PX13.

[0121] In addition, in the first mode, the readout circuit 140 may output the image data IDAT based on the first color signal through the image data generator 141. For example, the image data generator 141 may generate the image data IDAT by synthesizing the first color signals respectively received from the fifth pixel PX5 to the sixteenth pixel PX16. The readout circuit 140 may output the generated image data IDAT.

[0122] In the second mode, the readout circuit 1400 can obtain second color signals respectively assigned to the pixel groups from the second pixel group 312, the third pixel group 313, and the fourth pixel group 314. For example, the readout circuit 140 can obtain a red signal through the pixels included in the second pixel group 312, and can obtain a blue signal through the pixels included in the third pixel group 313.

[0123] In addition, in the second mode, the readout circuit 140 may output the image data IDAT based on the second color signal through the image data generator 141. For example, the image data generator 141 may generate the image data IDAT by synthesizing the second color signals respectively received from the second pixel group 312 to the fourth pixel group 314. The readout circuit 140 may output the generated image data IDAT.

[0124] Referring to the above components, the readout circuit 140 may receive color signals in different modes based on the intensity of light received through the pixel array 110. For example, the image sensors 100A and 100B may generate image data IDAT using color signals received in different modes according to changes in light environments.

[0125] Therefore, the image sensors 100A and 100B according to example embodiments may improve the image quality and / or resolution of the generated image data IDAT.

[0126] Refer to Figure 4B and Figure 5 , the photodiodes according to example embodiments may be electrically separated from each other by the device isolation pattern 330 .

[0127] However, Figure 5 At least a portion of the components shown in FIG. 2 (eg, the light transmission layer 220, the insulating layer 270, etc.) may be understood as being similar to Figure 2B The same reference numerals are used for the same or substantially the same components as those described above, and redundant descriptions are omitted.

[0128] For example, the first pixel PX1 and the second pixel PX2 included in the first pixel group 311 may be electrically separated from the fifth pixel PX5 and the sixth pixel PX6 included in the second pixel group 312 by the device isolation pattern 330 (or the first isolation pattern 321 ).

[0129] In this case, the first and second photodiodes PD1 and PD2 may correspond to the first and second pixels PX1 and PX2 , respectively, and the fifth and sixth photodiodes PD5 and PD6 may correspond to the fifth and sixth pixels PX5 and PX6 , respectively.

[0130] Therefore, the first photodiode PD1 and the second photodiode PD2 may be electrically separated from the fifth photodiode PD5 and the sixth photodiode PD6 by the device isolation pattern 330 (or the first isolation pattern 321 ).

[0131] The readout circuit 140 may receive the phase signal through at least a portion of the first lens 411B, the second lens 412B, the first photodiode PD1 , and the second photodiode PD2 .

[0132] In addition, the first microlens 511 may be disposed on the fifth pixel PX5, and the second microlens 512 may be disposed on the sixth pixel PX6. The readout circuit 140 may receive a color signal through at least a portion of the first microlens 511, the second microlens 512, the fifth photodiode PD5, and the sixth photodiode PD6.

[0133] In this case, signal interference between the phase signal and the color signal may be significantly reduced by the device isolation pattern 330 (or the first isolation pattern 321 ).

[0134] For example, signal interference between a phase signal received through the second lens 412B and the second photodiode PD2 and a color signal received through the first microlens 511 and the fifth photodiode PD5 may be reduced by the first isolation pattern 321 .

[0135] Referring to the above-described components, the image sensors 100A and 100B according to example embodiments may significantly reduce signal interference between a phase signal and a color signal received through the pixel array 110 .

[0136] Therefore, the image sensors 100A and 100B can improve the signal quality of the phase data PDAT and the image data IDAT.

[0137] In addition, the image sensor 100 can improve the performance of auto focus (AF) based on the phase data PDAT. In addition, the image sensors 100A and 100B can improve the quality of an image generated from the image data IDAT.

[0138] Fig. 6A 2 is a diagram illustrating first to fourth lenses formed to correspond to pixels included in first and fifth pixel groups of a pixel array according to example embodiments. Figure 6B 2 is a diagram illustrating first to fourth lenses formed to correspond to pixels included in first and fifth pixel groups of a pixel array according to example embodiments.

[0139] Refer to Fig. 6A and Figure 6B , the pixel array 110 according to example embodiments may include first to eighth pixel groups 311 to 318 , each pixel group including pixels arranged in a 2×2 matrix.

[0140] However, Fig. 6A and Figure 6B The first pixel group 311 to the fourth pixel group 314 shown in FIG. Figure 2A Therefore, the same reference numerals are used for the same or substantially the same components as those described above, and redundant descriptions are omitted.

[0141] In addition, each of the image sensors 100C and 100D may include four lenses formed to correspond to two adjacent pixels among a plurality of pixels included in the pixel array 110 , and individual lenses formed to correspond to individual pixels other than eight pixels corresponding to the four lenses.

[0142] For example, the image sensors 100C and 100D may include first lenses 611A and 611B and second lenses 612A and 612B, respectively formed to correspond to two adjacent pixels among the plurality of pixels included in the first pixel group 311. In addition, the image sensors 100C and 100D may include third lenses 613A and 613B and fourth lenses 614A and 614B, respectively formed to correspond to two pixels among the plurality of pixels included in the fifth pixel group 315.

[0143] Reference Fig. 6A , the image sensor 100C may include a first lens 611A and a second lens 612A formed to correspond to two pixels adjacent to each other in the first direction (e.g., the x direction) among the plurality of pixels included in the first pixel group 311. In addition, the image sensor 100C may include a third lens 613A and a fourth lens 614A formed to correspond to two pixels adjacent to each other in the first direction (e.g., the x direction) among the plurality of pixels included in the fifth pixel group 315.

[0144] According to example embodiments, the readout circuit 140 may obtain a first phase signal through the first lens 611A and the first pixel PX1 and / or the second pixel PX2 in the first mode. For example, in the first mode, the readout circuit 140 may obtain a first phase signal through the first lens 611A and the first pixel PX1.

[0145] In addition, in the first mode, the readout circuit 140 may obtain a second phase signal through the second lens 612A and the third pixel PX3 and / or the fourth pixel PX4. For example, in the first mode, the readout circuit 140 may obtain a second phase signal through the second lens 612A and the fourth pixel PX4.

[0146] Reference Figure 6B According to example embodiments, the image sensor 100D may include a first lens 611B and a second lens 612B formed to correspond to two pixels adjacent to each other in the second direction (e.g., the y direction) among the plurality of pixels included in the first pixel group 311. In addition, the image sensor 100D may include a third lens 613B and a fourth lens 614B formed to correspond to two pixels adjacent to each other in the second direction (e.g., the y direction) among the plurality of pixels included in the fifth pixel group 315.

[0147] In the first mode, the readout circuit 140 can obtain a first phase signal through the first lens 611B and the first pixel PX1 and / or the third pixel PX3. In addition, in the first mode, the readout circuit 140 can obtain a second phase signal through the second lens 612B and the second pixel PX2 and / or the fourth pixel PX4.

[0148] In addition, in the first mode, the readout circuit 140 can output phase data PDAT based on the first phase signal and the second phase signal. For example, the readout circuit 140 can use the phase data generator 142 to compare the first phase signal and the second phase signal in the first mode. The readout circuit 140 can output (or generate) the phase data PDAT including the focal length to the object based on the result of the comparison.

[0149] According to example embodiments, in the second mode, the readout circuit 140 may obtain the third phase signal through at least a portion of the pixels included in the first pixel group 311 .

[0150] For example, refer to Fig. 6A In the second mode, the readout circuit 140 can obtain a third phase signal through the first lens 611A, the first pixel PX1 and the second pixel PX2. Figure 6B In the second mode, the readout circuit 140 can obtain a third phase signal through the second lens 612B, the second pixel PX2 and the fourth pixel PX4.

[0151] In addition, in the second mode, the readout circuit 140 may obtain the fourth phase signal through at least a portion of the pixels included in the fifth pixel group 315 .

[0152] For example, refer to Fig. 6A In the second mode, the readout circuit 140 can obtain a fourth phase signal through the third lens 613A, the seventeenth pixel PX17 and the eighteenth pixel PX18. Figure 6B In the second mode, the readout circuit 140 can obtain a fourth phase signal through the fourth lens 614B, the eighteenth pixel PX18 and the twentieth pixel PX20.

[0153] In addition, in the second mode, the readout circuit 140 may output phase data PDAT based on the third phase signal and the fourth phase signal. For example, in the second mode, the readout circuit 140 may compare the third phase signal and the fourth phase signal using the phase data generator 142. The readout circuit 140 may output (or generate) phase data PDAT including the focal length to the object based on the result of the comparison.

[0154] Referring to the above configuration, when the intensity of light received by the pixel array 110 is less than a reference value, the readout circuit 140 may obtain third and fourth phase signals through lenses formed to correspond to a portion of pixels included in pixel groups spaced apart from each other.

[0155] In addition, the readout circuit 140 may output phase data PDAT based on the third phase signal and the fourth phase signal. The image sensors 100C and 100D (or the image signal processor 160) may perform auto focusing based on the phase data PDAT to measure a focal distance to a subject.

[0156] Therefore, even when the intensity of light received through the pixel array 110 is less than a reference value, the image sensors 100C and 100D according to example embodiments may improve the performance of auto focusing based on the phase data PDAT.

[0157] Fig. 7A is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens corresponding to pixels included in a first pixel group of a pixel array. Figure 7B is a diagram showing a structure formed with Figure 2A Schematic diagram of a first lens corresponding to pixels included in a first pixel group of a pixel array.

[0158] Refer to Fig. 7A and Figure 7B , the image sensors 100E and 100F according to example embodiments may include first lenses 711A and 711B formed to correspond to pixels included in the first pixel group 311 of the pixel array 110 , respectively.

[0159] For example, the image sensors 100E and 100F may include first lenses 711A and 711B formed to correspond to two adjacent pixels among the pixels included in the first pixel group 311 , respectively.

[0160] Reference Fig. 7A , the image sensor 100E according to example embodiments may include a first lens 711A formed to correspond to the third pixel PX3 and a fourth pixel PX4 adjacent to the third pixel PX3 in a first direction (eg, x direction).

[0161] Reference Figure 7B , the image sensor 100F according to example embodiments may include a first lens 711B formed to correspond to a first pixel PX1 in the first pixel group 311 and a third pixel PX3 adjacent to the first pixel PX1 in a second direction (eg, y direction).

[0162] According to example embodiments, the readout circuit 140 may obtain the first phase signal and the second phase signal from two pixels corresponding to the same lens.

[0163] For example, refer to Fig. 7A, the readout circuit 140 may obtain a first phase signal through the first lens 711A and the third pixel PX3 , and may obtain a second phase signal through the first lens 711A and the fourth pixel PX4 .

[0164] For example, refer to Figure 7B , the readout circuit 140 may obtain a first phase signal through the first lens 711B and the first pixel PX1 , and may obtain a second phase signal through the first lens 711B and the third pixel PX3 .

[0165] The readout circuit 140 may output phase data PDAT through the phase data generator 142 based on the first phase signal and the second phase signal.

[0166] For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal and the second phase signal. The readout circuit 140 may output the generated phase data PDAT. In this case, the phase data PDAT may include information related to the focus on the object.

[0167] The image signal processor 160 may perform auto focusing based on the phase data PDAT received from the readout circuit 140 .

[0168] In addition, the readout circuit 140 may obtain color signals from pixels other than the pixels corresponding to the first lenses 711A and 711B of the pixel array 110. For example, the readout circuit 140 may obtain color signals from pixels other than the third pixel PX3 and the fourth pixel PX4 of the pixel array 110. For example, the readout circuit 140 may obtain color signals from pixels other than the first pixel PX1 and the third pixel PX3 of the pixel array 110.

[0169] In addition, the readout circuit 140 may output image data IDAT through the image data generator 141 based on the color signal.

[0170] For example, the image data generator 141 may generate the image data IDAT by synthesizing the received color signals. The readout circuit 140 may output the generated image data IDAT.

[0171] Therefore, the image sensors 100E and 100F according to example embodiments may perform auto focusing on the object based on the phase signal received through the pixel array 110. In addition, the image sensors 100E and 100F may generate an image with respect to the object.

[0172] As a result, the image sensors 100E and 100F can improve the performance of auto-focusing on an object. In addition, the image sensors 100E and 100F can improve the quality and / or resolution of the generated image.

[0173] Fig. 8A is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to two pixels included in different pixel groups of a pixel array. Figure 8B is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to two pixels included in different pixel groups of a pixel array.

[0174] Refer to Fig. 8A and Figure 8B , the image sensors 100G and 100H according to example embodiments may include first lenses 811A and 811B formed to correspond to two pixels included in different pixel groups of the pixel array 110 , respectively.

[0175] Reference Fig. 8A , the image sensor 100G according to example embodiments may include a first lens 811A formed to correspond to the fourth pixel PX4 of the first pixel group 311 and the seventh pixel PX7 of the second pixel group 312. For example, the fourth pixel PX4 and the seventh pixel PX7 may be disposed adjacent to each other in a first direction (eg, x direction).

[0176] Reference Figure 8B , the image sensor 100H according to example embodiments may include a first lens 811B formed to correspond to the seventh pixel PX7 of the second pixel group 312 and the thirteenth pixel PX13 of the fourth pixel group 314. For example, the seventh pixel PX7 and the thirteenth pixel PX13 may be disposed adjacent to each other in the second direction (eg, the y direction).

[0177] According to example embodiments, the readout circuit 140 may obtain the first phase signal and the second phase signal from two pixels corresponding to the same lens.

[0178] For example, refer to Fig. 8A , the readout circuit 140 may obtain a first phase signal through the first lens 811A and the fourth pixel PX4 , and may obtain a second phase signal through the first lens 811A and the seventh pixel PX7 .

[0179] For example, refer to Figure 8B , the readout circuit 140 may obtain a first phase signal through the first lens 811B and the seventh pixel PX7, and may obtain a second phase signal through the first lens 811B and the thirteenth pixel PX13.

[0180] The phase data generator 142 may generate phase data PDAT based on the first phase signal and the second phase signal.

[0181] For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal with the second phase signal. The readout circuit 140 may output the generated phase data PDAT. In this case, the phase data PDAT may include information related to the focus on the object.

[0182] The image signal processor 160 may perform auto focusing based on the phase data PDAT received from the readout circuit 140 .

[0183] Furthermore, the readout circuit 140 may obtain color signals from pixels of the pixel array 110 other than the pixels corresponding to the first lenses 811A and 811B.

[0184] For example, the readout circuit 140 may obtain color signals from pixels other than the fourth pixel PX4 and the seventh pixel PX7 of the pixel array 110. For example, the readout circuit 140 may obtain color signals from pixels other than the seventh pixel PX7 and the thirteenth pixel PX13 of the pixel array 110.

[0185] In addition, the readout circuit 140 may output image data IDAT through the image data generator 141 based on the color signal.

[0186] For example, the image data generator 141 may generate the image data IDAT by synthesizing the received color signals. The readout circuit 140 may output the generated image data IDAT.

[0187] Therefore, the image sensors 100G and 100H according to example embodiments may perform auto focusing on the object based on the phase signal received through the pixel array 110. In addition, the image sensors 100G and 100H may generate an image with respect to the object.

[0188] As a result, the image sensors 100G and 100H can improve the performance of auto-focusing on a subject. In addition, the image sensors 100G and 100H can improve the image quality and / or resolution of the generated image.

[0189] Fig.9A is a diagram showing a structure formed with Figure 2A FIG. 1 is a diagram illustrating a first lens and a second lens corresponding to two pixels included in different pixel groups of a pixel array. Fig. 9B is a diagram showing a structure formed with Figure 2A FIG. 1 is a diagram illustrating a first lens and a second lens corresponding to two pixels included in different pixel groups of a pixel array.

[0190] Refer to Fig.9A and Fig. 9B, image sensors 100I and 100J according to example embodiments may each include first lenses 911A and 911B and second lenses 912A and 912B formed to correspond to two pixels included in different pixel groups of the pixel array 110 .

[0191] Reference Fig.9A , an image sensor 100I according to example embodiments may include a first lens 911A and a second lens 912A each formed to correspond to two pixels adjacent to each other in a first direction (eg, x direction) in different pixel groups.

[0192] For example, the image sensor 100I may include a first lens 911A formed to correspond to the second pixel PX2 of the first pixel group 311 and the fifth pixel PX5 of the second pixel group 312. In addition, the image sensor 100I may include a second lens 912A formed to correspond to the fourth pixel PX4 of the first pixel group 311 and the seventh pixel PX7 of the second pixel group 312.

[0193] Reference Fig. 9B , an image sensor 100J according to example embodiments may include a first lens 911B and a second lens 912B formed to correspond to two pixels adjacent to each other in a second direction (eg, y direction) in different pixel groups.

[0194] For example, the image sensor 100J may include a first lens 911B formed to correspond to the seventh pixel PX7 of the second pixel group 312 and the thirteenth pixel PX13 of the fourth pixel group 314. In addition, the image sensor 100J may include a second lens 912B formed to correspond to the eighth pixel PX8 of the second pixel group 312 and the fourteenth pixel PX14 of the fourth pixel group 314.

[0195] According to example embodiments, the readout circuit 140 may obtain a first phase signal from at least a portion of two pixels corresponding to the first lenses 911A and 911B. In addition, the readout circuit 140 may obtain a second phase signal from at least a portion of two pixels corresponding to the second lenses 912A and 912B.

[0196] Reference Fig.9A , the readout circuit 140 may obtain a first phase signal through the first lens 911A and the second pixel PX2 and / or the fifth pixel PX5, and may obtain a second phase signal through the second lens 912A and the fourth pixel PX4 and / or the seventh pixel PX7. For example, the readout circuit 140 may obtain a first phase signal through the first lens 911A and the second pixel PX2, and may obtain a second phase signal through the second lens 912A and the seventh pixel PX7.

[0197] Reference Fig. 9B , the readout circuit 140 may obtain a first phase signal through the first lens 911B and the seventh pixel PX7 and / or the thirteenth pixel PX13, and may obtain a second phase signal through the second lens 912B and the eighth pixel PX8 and / or the fourteenth pixel PX14. For example, the readout circuit 140 may obtain a first phase signal through the first lens 911B and the seventh pixel PX7, and may obtain a second phase signal through the second lens 912B and the eighth pixel PX8.

[0198] The readout circuit 140 may output the phase data PDAT based on the first phase signal and the second phase signal through the phase data generator 142 .

[0199] For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal and the second phase signal. The readout circuit 140 may output the generated phase data PDAT. In this case, the phase data PDAT may include information related to the focal distance to the object.

[0200] The image signal processor 160 may perform auto focusing based on the phase data PDAT received from the readout circuit 140 .

[0201] Furthermore, the readout circuit 140 may obtain color signals from pixels of the pixel array 110 other than pixels corresponding to the first lenses 911A and 911B and the second lenses 912A and 912B.

[0202] For example, the readout circuit 140 may obtain color signals from pixels other than the second pixel PX2, the fourth pixel PX4, the fifth pixel PX5, and the seventh pixel PX7 of the pixel array 110. For example, the readout circuit 140 may obtain color signals from pixels other than the seventh pixel PX7, the eighth pixel PX8, the thirteenth pixel PX13, and the fourteenth pixel PX14 of the pixel array 110.

[0203] In addition, the readout circuit 140 may output image data IDAT through the image data generator 141 based on the color signal.

[0204] For example, the image data generator 141 may generate the image data IDAT by synthesizing the received color signals. The readout circuit 140 may output the generated image data IDAT.

[0205] Therefore, the image sensors 100I and 100J according to example embodiments may perform auto focusing on a subject based on a phase signal received through the pixel array 110. In addition, the image sensors 100I and 100J may generate an image of the subject.

[0206] As a result, the image sensors 100I and 100J can improve the performance of auto-focusing on an object. In addition, the image sensors 100I and 100J can improve the quality and / or resolution of the generated images.

[0207] Fig.10 is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram of a first lens corresponding to four pixels included in two different pixel groups of a pixel array.

[0208] Reference Fig.10 , the image sensor 100K according to example embodiments may include a first lens 1011 formed to correspond to four pixels included in two different pixel groups of the pixel array 110 .

[0209] For example, the image sensor 100K may include the first lens 1011 formed to correspond to four pixels arranged in a 2×2 matrix in two different pixel groups.

[0210] For example, the image sensor 100K may include a first lens 1011 formed to correspond to the second pixel PX2, the fourth pixel PX4, the fifth pixel PX5, and the seventh pixel PX7. In this case, the second pixel PX2 and the fourth pixel PX4 may be included in the first pixel group 311. In addition, the fifth pixel PX5 and the seventh pixel PX7 may be included in the second pixel group 312.

[0211] According to example embodiments, the readout circuit 140 may obtain the first phase signal and the second phase signal from at least a portion of four pixels corresponding to the first lens 1011 .

[0212] For example, the readout circuit 140 may obtain a first phase signal through at least a portion of the second pixel PX2 and the fourth pixel PX4 , and may obtain a second phase signal through at least a portion of the fifth pixel PX5 and the seventh pixel PX7 .

[0213] For example, the readout circuit 140 may obtain a first phase signal through the second pixel PX2 in response to a first control signal (e.g., a timing control signal) received from the timing controller 150. In addition, the readout circuit 140 may obtain a second phase signal through the seventh pixel PX7 in response to a second control signal received from the timing controller 150 after the first control signal.

[0214] In addition, the readout circuit 140 may output phase data PDAT through the phase data generator 142 based on the first phase signal and the second phase signal.

[0215] For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal and the second phase signal. The readout circuit 140 may output the generated phase data PDAT. In this case, the phase data PDAT may include information related to the focal distance to the object.

[0216] The image signal processor 160 may perform auto focusing based on the phase data PDAT received from the readout circuit 140 .

[0217] In addition, the readout circuit 140 may obtain color signals from pixels of the pixel array 110 other than the pixels corresponding to the first lens 1011 .

[0218] For example, the readout circuit 140 may obtain color signals from pixels other than the second pixel PX2 , the fourth pixel PX4 , the fifth pixel PX5 , and the seventh pixel PX7 of the pixel array 110 .

[0219] In addition, the readout circuit 140 may output image data IDAT through the image data generator 141 based on the color signal.

[0220] For example, the image data generator 141 may generate the image data IDAT by synthesizing the received color signals. The readout circuit 140 may output the generated image data IDAT.

[0221] Therefore, the image sensor 100K according to example embodiments may perform auto focusing on the object based on the phase signal received through the pixel array 110. In addition, the image sensor 100K may generate an image of the object.

[0222] As a result, the image sensor 100K can improve the performance of auto-focusing on a subject. In addition, the image sensor 100K can improve the quality and / or resolution of a generated image.

[0223] Fig.11 is a diagram showing a structure formed with Figure 2A FIG. 4 is a diagram illustrating a first lens corresponding to four pixels included in four different pixel groups of a pixel array.

[0224] Reference Fig.11 , the image sensor 100L according to example embodiments may include a first lens 1111 formed to correspond to four pixels included in different pixel groups of the pixel array 110 .

[0225] For example, the image sensor 100L may include a first lens 1111 formed to correspond to four pixels arranged in a 2×2 matrix included in four different pixel groups.

[0226] For example, the image sensor 100L includes a first lens 1111 formed to correspond to a fourth pixel PX4, a seventh pixel PX7, a tenth pixel PX10, and a thirteenth pixel PX13. In this case, the fourth pixel PX4 may be included in the first pixel group 311. In addition, the seventh pixel PX7 may be included in the second pixel group 312. In addition, the tenth pixel PX10 may be included in the third pixel group 313. In addition, the thirteenth pixel PX13 may be included in the fourth pixel group 314.

[0227] According to example embodiments, the readout circuit 140 may obtain the first phase signal and the second phase signal from at least a portion of four pixels corresponding to the first lens 1111 .

[0228] For example, the readout circuit 140 may obtain a first phase signal through at least a portion of the fourth pixel PX4 and the tenth pixel PX10 , and may obtain a second phase signal through at least a portion of the seventh pixel PX7 and the thirteenth pixel PX13 .

[0229] For example, the readout circuit 140 may obtain a first phase signal through the fourth pixel PX4 in response to a first control signal (e.g., a timing control signal) received from the timing controller 150. In addition, the readout circuit 140 may obtain a second phase signal through the thirteenth pixel PX13 in response to a second control signal received from the timing controller 150 after the first control signal.

[0230] In addition, the readout circuit 140 may output phase data PDAT through the phase data generator 142 based on the first phase signal and the second phase signal.

[0231] For example, the phase data generator 142 may generate the phase data PDAT by comparing the first phase signal and the second phase signal. The readout circuit 140 may output the generated phase data PDAT. In this case, the phase data PDAT may include information related to the focal distance to the object.

[0232] The image signal processor 160 may perform auto focusing based on the phase data PDAT received from the readout circuit 140 .

[0233] In addition, the readout circuit 140 may obtain color signals from pixels of the pixel array 110 excluding the pixels corresponding to the first lens 1111 .

[0234] For example, the readout circuit 140 may obtain color signals from pixels other than the fourth pixel PX4 , the seventh pixel PX7 , the tenth pixel PX10 , and the thirteenth pixel PX13 of the pixel array 110 .

[0235] In addition, the readout circuit 140 may output image data IDAT based on the color signal through the image data generator 141 .

[0236] For example, the image data generator 141 may generate the image data IDAT by synthesizing the received color signals. The readout circuit 140 may output the generated image data IDAT.

[0237] Therefore, the image sensor 100L according to example embodiments may perform auto focusing on the object based on the phase signal received through the pixel array 110. In addition, the image sensor 100L may generate an image of the object.

[0238] As a result, the image sensor 100L can improve the performance of auto-focusing on the object. In addition, the image sensor 100L can improve the quality and / or resolution of the generated image.

[0239] As described above, the image sensor 100 according to example embodiments may significantly reduce signal interference between a phase signal and a color signal received from the pixel array 110 .

[0240] In addition, the image sensor 100 according to example embodiments may significantly reduce signal interference between phase signals obtained through different lenses within a specific pixel group.

[0241] In addition, the image sensor 100 according to example embodiments may significantly reduce signal interference between a phase signal and a color signal to improve signal qualities of the phase signal and the color signal.

[0242] In addition, the image sensor 100 according to example embodiments may improve the performance of auto focusing using phase data generated based on the phase signal.

[0243] In addition, the image sensor 100 according to example embodiments may improve the quality of a color signal to improve the quality and / or resolution of an image generated by the image sensor 100 .

[0244] As described above, according to example embodiments, the signal quality of a phase signal and a color signal received through a pixel array may be improved.

[0245] In some example embodiments, according to example embodiments, Figure 1Each of the components represented by the blocks shown in the figure can be implemented as various numbers of hardware, software and / or firmware structures for performing the above-mentioned corresponding functions. For example, at least one of these components may include various hardware components, including digital circuits, programmable or non-programmable logic devices or arrays, application-specific integrated circuits (ASICs), transistors, capacitors, logic gates, or other circuits (such as memories, processors, logic circuits, lookup tables, etc.) using direct circuit structures, which can perform corresponding functions by the control of one or more microprocessors or other control devices. In addition, at least one of these components may include a part of a module, a program or a code, which contains one or more executable instructions for performing a specified logical function and being set up by one or more microprocessors or other control devices. In addition, at least one of these components may also include a processor (such as a central processing unit (CPU), a microprocessor, etc. that performs the corresponding functions) or may be implemented by a processor (such as a central processing unit (CPU), a microprocessor, etc. that performs the corresponding functions). The functional aspects of the example embodiments may be implemented in an algorithm executed on one or more processors. In addition, the components, elements, modules or units or processing steps represented by the blocks may be used in any number of related technologies for electronic configuration, signal processing and / or control, data processing, etc.

[0246] While aspects of example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the inventive concept as defined by the appended claims.

Claims

1. An image sensor, comprising: a first pixel group including first pixels, second pixels, third pixels, and fourth pixels arranged in a 2×2 matrix; a second pixel group including fifth, sixth, seventh and eighth pixels arranged in a 2×2 matrix, wherein the second pixel group is disposed adjacent to the first pixel group in a first direction; a first lens corresponding to the first pixel and the second pixel; a second lens corresponding to the third pixel and the fourth pixel; a device isolation pattern that electrically isolates the first pixel group from the second pixel group; and The readout circuit is configured as: outputting phase data based on at least a portion of the phase signal received from the first pixel group; and Image data is output based on at least a portion of the color signal received from the second pixel group.

2. The image sensor according to claim 1, wherein: The device isolation pattern includes a plurality of portions electrically separating the first pixel, the second pixel, the third pixel, and the fourth pixel from each other, and Wherein, each of the plurality of portions is spaced apart from a center of the first pixel group.

3. The image sensor according to claim 1, wherein: The readout circuit is further configured to: obtaining a first phase signal based on at least a portion of a first pixel signal received from the first pixel and a second pixel signal received from the second pixel; obtaining a second phase signal based on at least a portion of a third pixel signal received from the third pixel and a fourth pixel signal received from the fourth pixel; as well as The phase data is obtained based on the first phase signal and the second phase signal.

4. The image sensor according to claim 3, further comprising: a third pixel group including a ninth pixel, a tenth pixel, an eleventh pixel, and a twelfth pixel arranged in a 2×2 matrix, wherein the third pixel group is disposed adjacent to the first pixel group in a second direction intersecting the first direction; and a fourth pixel group including a thirteenth pixel, a fourteenth pixel, a fifteenth pixel, and a sixteenth pixel arranged in a 2×2 matrix, wherein the fourth pixel group is disposed adjacent to the second pixel group in the second direction, The readout circuit is further configured to: receive color signals from pixels included in the second pixel group and the fourth pixel group, and output the image data based on the color signals.

5. The image sensor according to claim 4, wherein: The readout circuit is further configured to: selectively operating in a first mode or a second mode based on an intensity of light received by a plurality of pixels, and In the first mode: receiving first color signals respectively assigned to the fifth pixel, the sixth pixel, the seventh pixel, the eighth pixel, the ninth pixel, the tenth pixel, the eleventh pixel, the twelfth pixel, the thirteenth pixel, the fourteenth pixel, the fifteenth pixel, and the sixteenth pixel; and The image data is obtained based on the first color signal.

6. The image sensor according to claim 5, wherein: The readout circuit is further configured to: In the second mode: obtaining second color signals respectively assigned to the second pixel group, the third pixel group, and the fourth pixel group; and The image data is obtained based on the second color signal.

7. The image sensor according to claim 5, further comprising: a fifth pixel group including a seventeenth pixel, an eighteenth pixel, a nineteenth pixel, and a twentieth pixel arranged in a 2×2 matrix, wherein the fifth pixel group is disposed adjacent to the second pixel group in the first direction; a third lens corresponding to the seventeenth pixel and the eighteenth pixel; and A fourth lens corresponds to the nineteenth pixel and the twentieth pixel.

8. The image sensor according to claim 7, wherein: The readout circuit is further configured to: In the second mode: obtaining a third phase signal based on at least a portion of the first pixel signal, the second pixel signal, the third pixel signal, and the fourth pixel signal; obtaining a fourth phase signal based on at least a portion of a seventeenth pixel signal received from the seventeenth pixel, an eighteenth pixel signal received from the eighteenth pixel, a nineteenth pixel signal received from the nineteenth pixel, and a twentieth pixel signal received from the twentieth pixel; and The phase data is obtained based on the third phase signal and the fourth phase signal.

9. The image sensor according to claim 2, wherein: The multiple parts include: a first portion extending between the first pixel and the second pixel in a second direction intersecting the first direction; a second portion extending in the first direction between the second pixel and the fourth pixel; a third portion extending in the second direction between the third pixel and the fourth pixel; and a fourth portion extending in the first direction between the first pixel and the third pixel, and The image sensor further includes a floating diffusion node electrically connected to the first pixel to the fourth pixel.

10. The image sensor according to claim 9, wherein: The floating diffusion node is disposed in a position corresponding to a center of the first pixel group, and Wherein, the first pixel, the second pixel, the third pixel and the fourth pixel are electrically connected to the floating diffusion node.

11. An image sensor, comprising: a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group arranged in a 2×2 matrix, each of which includes pixels arranged in a 2×2 matrix; a fifth pixel group including pixels arranged in a 2×2 matrix and disposed adjacent to the fourth pixel group; as well as The readout circuit is configured as: outputting phase data based on a first phase signal and a second phase signal obtained from at least a portion of pixel signals of the first pixel group in a first mode; as well as In the second mode, phase data is output based on a third phase signal obtained from at least a portion of the pixel signals of the first pixel group and a fourth phase signal obtained from at least a portion of the pixel signals of the fifth pixel group.

12. The image sensor according to claim 11, further comprising: a device isolation pattern that electrically separates the first pixel group, the second pixel group, the third pixel group, the fourth pixel group, and the fifth pixel group from each other, wherein the device isolation pattern comprises a plurality of portions, the plurality of portions electrically separating a first pixel, a second pixel, a third pixel, and a fourth pixel of the first pixel group, and Wherein, each of the plurality of portions is spaced apart from a center of the first pixel group.

13. The image sensor according to claim 12, wherein: The readout circuit is further configured to: In the first mode, receiving first color signals corresponding to pixels of the second pixel group, pixels of the third pixel group, and pixels of the fourth pixel group, respectively, and outputting image data; as well as In the second mode, second color signals corresponding to the second pixel group, the third pixel group, and the fourth pixel group, respectively, are received, and image data is output.

14. The image sensor according to claim 12, further comprising: a first lens corresponding to the first pixel and the second pixel; as well as a second lens corresponding to the third pixel and the fourth pixel, Wherein, the readout circuit is further configured as: In the first mode: obtaining the first phase signal based on at least a portion of a first pixel signal received from the first pixel and a second pixel signal received from the second pixel; as well as The second phase signal is obtained based on at least a portion of a third pixel signal received from the third pixel and a fourth pixel signal received from the fourth pixel.

15. The image sensor according to claim 14, further comprising: a third lens and a fourth lens, each of which corresponds to two pixels of the fifth pixel group, Wherein, the readout circuit is further configured as: In the second mode: obtaining the third phase signal from a pixel signal corresponding to the first lens or the second lens and at least a portion of the first pixel signal, the second pixel signal, the third pixel signal, and the fourth pixel signal; and The fourth phase signal is obtained from at least a portion of pixel signals corresponding to the third lens or the fourth lens and pixel signals obtained from pixels included in the fifth pixel group.

16. The image sensor according to claim 11, further comprising: an image signal processor electrically connected to the readout circuit, Wherein the image signal processor is configured to determine focus based on the phase data received from the readout circuit.

17. The image sensor of claim 12, wherein the plurality of portions comprises: a first portion extending between the first pixel and the second pixel in a second direction intersecting the first direction; a second portion extending in the first direction between the second pixel and the fourth pixel; a third portion extending in the second direction between the third pixel and the fourth pixel; as well as a fourth portion extending in the first direction between the first pixel and the third pixel, and The image sensor further includes a floating diffusion node electrically connected to the first pixel, the second pixel, the third pixel, and the fourth pixel.

18. The image sensor according to claim 17, wherein: The first portion, the second portion, the third portion, and the fourth portion are spaced apart from the floating diffusion node, wherein the floating diffusion node is located in a position corresponding to the center of the first pixel group, and Wherein, the first pixel, the second pixel, the third pixel and the fourth pixel are electrically connected to the floating diffusion node.

19. An image sensor, comprising: a first pixel group including first pixels, second pixels, third pixels, and fourth pixels arranged in a 2×2 matrix; a second pixel group including fifth, sixth, seventh and eighth pixels arranged in a 2×2 matrix, wherein the second pixel group is disposed adjacent to the first pixel group; a first lens corresponding to at least two pixels among the pixels of the first pixel group and the second pixel group; a device isolation pattern that electrically separates pixels of the first pixel group and pixels of the second pixel group from each other; and a readout circuit electrically connected to the plurality of pixels, wherein the device isolation pattern includes a plurality of portions that electrically separate the first pixel, the second pixel, the third pixel, and the fourth pixel from each other, wherein each of the plurality of portions is spaced apart from a center of the first pixel group, and Wherein, the readout circuit is configured as: outputting phase data based on at least a portion of the phase signal corresponding to the first lens; and Image data is output based on color signals received from pixels offset from the first lens among the plurality of pixels.

20. The image sensor according to claim 19, wherein: The first lens corresponds to the first pixel and the second pixel, and The readout circuit is further configured to output the phase data based on a first phase signal obtained by the first pixel and a second phase signal obtained by the second pixel.

Citation Information

Patent Citations

  • Methods of preparing 2D or 3D structures and 2D or 3D structures made by the same

    KR1020230101232A