Display device

Abstract

The invention provides a display device. A display device according to an embodiment is defined with an active area including an emission area and a sensing area, and includes: an optical element layer including a light emitting element in the emission area and a photoelectric conversion element in the sensing area; a light blocking member disposed on the optical element layer and including a first opening disposed in a region corresponding to the emission region and a second opening disposed in a region corresponding to the sensing region; a color filter in the first opening and overlapping the light emitting element; and an optical filter in the second opening and overlapping the photoelectric conversion element, in which the optical filter is completely disposed in the second opening and has a thickness smaller than a thickness of the color filter.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority and all rights arising from Korean Patent Application No. 10-2023-0100447 filed in the Korean Intellectual Property Office on August 1, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to a display device. Background Art

[0004] As multimedia technology develops, the importance of display devices continues to increase. Therefore, various types of display devices such as liquid crystal display devices, organic light emitting display devices, etc. have been developed. Summary of the invention

[0005] Aspects of the present disclosure provide a display device including a photoelectric conversion element having improved reliability.

[0006] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0007] According to aspects of the present disclosure, a display device is provided, which defines an effective area including an emission area and a sensing area, and includes: an optical element layer, including a light emitting element located in the emission area and a photoelectric conversion element located in the sensing area; a light blocking member, which is arranged on the optical element layer and includes a first opening arranged in an area corresponding to the emission area and a second opening arranged in an area corresponding to the sensing area; a color filter, which is located in the first opening and overlaps with the light emitting element; and an optical filter, which is located in the second opening and overlaps with the photoelectric conversion element, wherein the optical filter is completely arranged in the second opening and has a thickness smaller than that of the color filter.

[0008] In an embodiment, the optical filter may include a metal thin film that transmits light corresponding to a wavelength band of light emitted from the emission region.

[0009] In an implementation, the metal thin film may have a thickness of 10 nm or less.

[0010] In an implementation, the metal thin film may include at least one metal selected from the group consisting of copper (Cu), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), vanadium (V), and aluminum (Al).

[0011] In an embodiment, the display device may also include a pixel including a light emitting element and emitting light of a first color in an emission area, the color filter may be a color filter of the first color that selectively transmits light of the first color, and the optical filter may include a color filter of the first color that selectively transmits light of the first color.

[0012] In an embodiment, the pixel may emit green light, and the color filter and the optical filter may be a green color filter.

[0013] In an embodiment, the active area may include a pixel column in which a pixel emitting light of the first color and another pixel are arranged, and the sensing area may be provided between an emission area of ​​the pixel and an emission area of ​​the another pixel.

[0014] In an embodiment, the color filter and the optical filter may be disposed on the same layer above the optical element layer.

[0015] In an embodiment, the display device may further include: a panel circuit layer disposed under the optical element layer and including a pixel transistor connected to the light emitting element and a sensor transistor connected to the photoelectric conversion element; and a substrate disposed under the panel circuit layer.

[0016] In an embodiment, the light emitting element and the photoelectric conversion element may be provided on the same layer over the substrate.

[0017] According to aspects of the present disclosure, a display device is provided, comprising: a first pixel including a light-emitting element located in a first emission region; an optical sensor including a photoelectric conversion element located in a sensing region arranged adjacent to the first emission region; a first color filter located in the first emission region and arranged on the light-emitting element; and an optical filter located in the sensing region and arranged on the photoelectric conversion element, wherein the optical filter completely covers a light receiving portion of the optical sensor arranged corresponding to the sensing region and has a thickness smaller than that of the first color filter.

[0018] In an embodiment, the optical filter may include a metal thin film that transmits light corresponding to a wavelength band of light emitted from the first emission region.

[0019] In an implementation, the metal thin film may have a thickness of 10 nm or less.

[0020] In an implementation, the metal thin film may include at least one metal selected from the group consisting of copper (Cu), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), vanadium (V), and aluminum (Al).

[0021] In an embodiment, the display device may further include: a second pixel including a light-emitting element located in a second emission region; a third pixel including a light-emitting element located in a third emission region; a second color filter located in the second emission region and disposed on the second pixel; and a third color filter located in the third emission region and disposed on the third pixel. The first pixel, the second pixel, and the third pixel may emit light of a first color, light of a second color, and light of a third color, respectively, and the first color filter, the second color filter, and the third color filter may be color filters that selectively transmit light of the first color, light of the second color, and light of the third color, respectively.

[0022] In an embodiment, the optical filter may include a fourth color filter that selectively transmits one of the first color light, the second color light, and the third color light and may have a thickness smaller than that of the first color filter, the second color filter, and the third color filter.

[0023] In an embodiment, the display device may further include: an optical element layer including a light emitting element and a photoelectric conversion element; an optical filter layer disposed on the optical element layer and including a first color filter and an optical filter; and a substrate disposed below the optical element layer. The first color filter and the optical filter may be disposed on the same layer above the surface of the substrate.

[0024] In an embodiment, the display device may further include: a light blocking member disposed in the optical filter layer and surrounding the first emission region and the sensing region in a plan view.

[0025] In an embodiment, the light blocking member may include a first opening disposed in a region corresponding to the first emission region and a second opening disposed in a region corresponding to the sensing region, the first color filter may be completely disposed in the first opening, and the optical filter may be completely disposed in the second opening.

[0026] In an implementation, the optical filter may have a thickness smaller than that of the light blocking member.

[0027] The display device according to the embodiment includes a photoelectric conversion element and an optical filter disposed on the photoelectric conversion element. The optical filter may be a thin film having a thickness smaller than that of a color filter disposed on a light emitting element located in an emission region, and may be, for example, a metal thin film or a color filter.

[0028] According to the embodiment, the degradation of the photoelectric conversion element can be reduced or mitigated while ensuring a sufficient amount of light received by the photoelectric conversion element. Therefore, the reliability of the photoelectric conversion element and the optical sensor including the same can be improved.

[0029] However, the effects according to the embodiments of the present disclosure are not limited to those exemplified above, and various other effects are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0031] Figure 1 is a plan view showing a display device according to an embodiment;

[0032] Figure 2 is a block diagram of a display device according to one embodiment;

[0033] Figure 3 is a cross-sectional view showing a schematic cross section of an active area of ​​a display device and a method for sensing a fingerprint of a finger according to an embodiment;

[0034] Figure 4 is a cross-sectional view showing a schematic cross section of an active area of ​​a display device and a method for sensing a fingerprint of a finger according to an embodiment;

[0035] Figure 5 is a circuit diagram of a pixel and an optical sensor according to one embodiment;

[0036] Figure 6 is a plan view showing an arrangement structure of pixels, optical sensors, color filters, and optical filters according to one embodiment;

[0037] Figure 7 is a plan view showing an arrangement structure of pixels, optical sensors, color filters, and optical filters according to one embodiment;

[0038] Figure 8 is a plan view showing a pixel, an optical sensor, and a light blocking member according to one embodiment;

[0039] Fig. 9 It is shown along Figure 6 and Figure 8 A cross-sectional view of an example of a cross section of the display device taken along line II';

[0040] Fig.10 It is shown along Figure 7 and Figure 8 A cross-sectional view of an example of a cross section of the display device taken along line II-II';

[0041] Fig.11 , Fig.12 and Fig.13 is a graph showing light transmittance or light absorption rate according to the material and thickness of the optical filter;

[0042] Fig.14 It is shown along Figure 6 and Figure 8 A cross-sectional view of an example of a cross section of the display device taken along line II'; and

[0043] Fig.15 It is shown along Figure 7 and Figure 8 A cross-sectional view of an example of a cross section of a display device taken along line II-II'. DETAILED DESCRIPTION

[0044] The inventive concept will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the inventive concept are shown. However, the inventive concept may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art.

[0045] It will also be understood that when an element or layer is referred to as being “on” another element or layer, it can be directly on the other element or layer, or intervening layers may also be present. Throughout the specification, the same reference numerals refer to the same components.

[0046] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0047] The features of each of the various embodiments of the present disclosure may be partially or completely combined with each other, and may be technically coordinated with each other in various ways, and the corresponding embodiments may be implemented independently of each other, or may be implemented together in association with each other.

[0048] Figure 1 is a plan view showing a display device 1 according to an embodiment.

[0049] exist Figure 1, a first direction DR1, a second direction DR2, and a third direction DR3 are shown. The first direction DR1 may be a direction parallel to one side of the display device 1 in a plan view, and may be, for example, a horizontal direction of the display device 1. The second direction DR2 may be a direction parallel to another side in contact with one side of the display device 1 in a plan view, and may be, for example, a vertical direction of the display device 1. The third direction DR3 may be a thickness direction (or height direction) of the display device 1. However, the directions mentioned in the following embodiments may refer to relative directions, and the embodiments are not limited thereto.

[0050] Furthermore, in an embodiment, the term “above” or “top surface” expressed with respect to the third direction DR3 may refer to the side where the display surface of the display panel 10 is located, and the term “below”, “bottom surface” or “rear surface” may refer to the side opposite to the display surface of the display panel 10. However, depending on the direction facing the display panel 10 or the display device 1 including the same, the defined directions may be changed to opposite directions, etc.

[0051] refer to Figure 1 , the display device 1 may be one of various electronic devices that provide a display surface on which an image is displayed. For example, the display device 1 may be one of various electronic devices including a mobile phone, a smart phone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook, an electronic book, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, an ultra-mobile PC (UMPC), a television, a game console, a wristwatch-type electronic device, a head-mounted display, a personal computer monitor, a laptop computer, a car dashboard, a digital camera, a video camera, an external billboard, an electric billboard, various medical devices, various inspection devices, various household appliances such as a refrigerator or a washing machine including a display area, an Internet of Things (IoT) device, etc. A typical example of the display device 1 to be described later may be a smart phone, a tablet PC, or a laptop computer, but the display device 1 according to the embodiment is not limited thereto.

[0052] The display device 1 may include a display panel 10 , a driving circuit 20 , a circuit board 30 , and a readout circuit 40 (eg, a readout IC).

[0053] The display panel 10 may include an active area AA and a non-active area NA. In one embodiment, the display panel 10 may be formed to be partially or completely flexible and may be transformed to be folded, bent, or curled in at least one portion. For example, the display panel 10 may be folded or bent in the non-active area NA so that a portion of the display panel 10 in the non-active area NA on which the drive circuit 20 and the like are mounted may be positioned on the opposite side of the display surface (e.g., the rear surface side of the display device 1).

[0054] The active area AA may include the display area. For example, the active area AA may completely overlap with the display area. Figure 3 or Figure 4 The pixels PX) may be arranged in the active area AA (or display area). For example, the active area AA may include a pixel area in which the pixels PX are arranged or arranged. Each pixel area may include an emission area. In one embodiment, the light emitting element (e.g., Figure 5 A light emitting element EL) can be arranged in each emission area.

[0055] The active area AA may also include a sensing area responsive to light. For example, the active area AA may also include a sensing area (e.g., a light sensing area) for sensing the amount or wavelength of incident light. In one embodiment, the sensing area may include a fingerprint sensing area for sensing a user's fingerprint using an optical sensor. For example, an optical sensor (e.g., Figure 3 The optical sensors PS of the embodiment of the present invention may be arranged in the active area AA. Each optical sensor PS may include a photoelectric conversion element (eg, Figure 5 The photoelectric conversion element PD can sense incident light and convert it into an electrical signal.

[0056] For example, the active area AA may include an optical sensor PS including a corresponding photoelectric conversion element PD. The optical sensor PS may output a sensing signal corresponding to incident light, and may sense a user input (eg, fingerprint input) provided in the active area AA using the sensing signal.

[0057] In one embodiment, the sensing area may overlap with the display area. For example, the sensing area may be a portion of the display area, or may be an area substantially the same as the display area. In this case, the sensing area may be a portion of the active area AA, or may be the entire active area AA.

[0058] The non-active area NA may include a non-display area and may be located around the active area AA. The non-active area NA may be located on at least one side of the active area AA and may partially or completely surround the active area AA. Signal lines, pads, and / or drive circuits 20 electrically connected to the pixels PX and / or optical sensors PS in the active area AA may be disposed in the non-active area NA.

[0059] The driving circuit 20 may be electrically connected to the pixels PX and the optical sensor PS in the active area AA to drive the pixels PX and the optical sensor PS. For example, the driving circuit 20 may generate a driving signal and / or a power voltage for driving the pixels PX and the optical sensor PS, and may output the driving signal and / or the power voltage to the pixels PX and the optical sensor PS. For example, the driving circuit 20 may include at least one of a gate driving circuit (or a portion of a gate driving circuit) including a scan driver and a source driving circuit (or a portion of a source driving circuit) including a data driver.

[0060] The driving circuit 20 may be formed as an integrated circuit (IC) and mounted on the display panel 10, or may be mounted on a circuit board 30 connected to the display panel 10. In one embodiment, the driving circuit 20 may be disposed outside the active area AA. In another embodiment, at least a portion of the driving circuit 20 (e.g., at least a portion of a scan driver) may be disposed inside the active area AA and may be formed together with the pixel PX.

[0061] The circuit board 30 may be connected or attached to one end of the display panel 10. For example, the circuit board 30 may be attached to one end of the display panel 10 using an anisotropic conductive film (ACF). Leads of the circuit board 30 may be electrically connected to a pad unit of the display panel 10. In one embodiment, the circuit board 30 may be a flexible film such as a flexible printed circuit board (FPCB) or a chip on film (COF).

[0062] The readout circuit 40 may be electrically connected to the optical sensor PS disposed in the active area AA. The readout circuit 40 may receive an electrical signal corresponding to a current flowing through the optical sensor PS. The readout circuit 40 may convert the electrical signal received from the optical sensor PS and transmit it to a processor connected to the readout circuit 40 (e.g., a processor disposed in a host device or the display device 1), or may perform a designated function based on the electrical signal.

[0063] In one embodiment, the readout circuit 40 may be formed as an integrated circuit (IC) and attached to the circuit board 30 by a chip on film (COF) method, but the embodiment is not limited thereto. For example, the readout circuit 40 may be attached to the display panel 10 in the non-active area NA by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.

[0064] Figure 2 is a block diagram of a display device 1 according to an embodiment.

[0065] Apart from Figure 1 In addition, reference Figure 2, the display device 1 may include a display panel 10, a driving circuit 20, a readout circuit 40 and a processor 50. Figure 2 An embodiment in which the processor 50 is provided in the display device 1 is disclosed, but the embodiment is not limited thereto. For example, the processor 50 may be provided in a host device connected to the display device 1 .

[0066] The display panel 10 may include pixels PX and optical sensors PS disposed in the active area AA, scan lines SL and power voltage lines VL connected (e.g., electrically connected) to the pixels PX and the optical sensors PS, data lines DL and emission control lines EML connected to the pixels PX, and readout lines ROL connected to the optical sensors PS.

[0067] Each pixel PX may be connected to at least one scan line SL, one data line DL, one emission control line EML, and at least one power voltage line VL.

[0068] Each optical sensor PS may be connected to at least one scan line SL, one readout line ROL, and at least one power voltage line VL. In one embodiment, the optical sensor PS may be disposed between pixels PX and may be formed together with the pixels PX inside the display panel 10. For example, the optical sensor PS may be formed or disposed between pixels PX located in the active area AA.

[0069] The scan lines SL may connect the pixels PX and the optical sensors PS to the scan driver 23. The scan lines SL may transmit or provide scan signals output from the scan driver 23 to the pixels PX and the optical sensors PS.

[0070] The data lines DL may connect the pixels PX to the data driver 22. The data lines DL may transmit or provide corresponding data signals output from the data driver 22 to the pixels PX.

[0071] The emission control line EML may connect the pixel PX to the emission control driver 25. The emission control line EML may transfer or provide an emission control signal output from the emission control driver 25 to the pixel PX.

[0072] The readout line ROL may connect the optical sensor PS to the readout circuit 40. The readout line ROL may transmit or provide an electrical signal (e.g., a sensing current or a sensing signal) generated according to the photocurrent output from the optical sensor PS to the readout circuit 40. Thus, the readout circuit 40 may sense a user input (e.g., a fingerprint input).

[0073] The power voltage line VL may connect the pixel PX and the optical sensor PS to the power supply unit 24. For example, the power voltage line VL may transmit or provide a first power voltage (eg, a first power voltage) generated or output from the power supply unit 24 to the pixel PX and the optical sensor PS. Figure 5 A first power voltage ELVDD), a second power voltage (eg, Figure 5 a second power voltage ELVSS) and / or other power voltages. Figure 2 It is shown that one power voltage line VL is provided in the display panel 10 , but power voltage lines VL corresponding to the type and / or number of power voltages required to drive the pixels PX and the optical sensors PS may be provided or formed in the display panel 10 .

[0074] The driving circuit 20 may include a data driver 22 for driving the pixels PX, a scan driver 23 for driving the pixels PX and the optical sensor PS, and a timing controller 21 for controlling the driving timing of the data driver 22 and the scan driver 23. In one embodiment, the driving circuit 20 may further include a power supply unit 24 for generating and / or transmitting a power voltage for driving the pixels PX and the optical sensor PS and / or an emission control driver 25 for driving the pixels PX.

[0075] The timing controller 21 may receive the image signal RGB and the control signal CTS from the processor 50. The timing controller 21 may output the image data DATA, the data control signal DCS, the scan control signal SCS, and the emission control driving signal ECS based on the image signal RGB and the control signal CTS. The image data DATA and the data control signal DCS may be provided to the data driver 22. The scan control signal SCS and the emission control driving signal ECS may be provided to the scan driver 23 and the emission control driver 25, respectively.

[0076] In one embodiment, the control signal CTS may include a first mode control signal MO1 and a second mode control signal MO2. When the first mode control signal MO1 is provided, the timing controller 21 may generate a first data control signal DCS1, and when the second mode control signal MO2 is provided, the timing controller 21 may generate a second data control signal DCS2.

[0077] The data driver 22 may generate a data signal corresponding to the image data DATA and may output the data signal to the data line DL. For example, the data driver 22 may convert the image data DATA into analog data voltages and may output them to the data line DL. The data signal may be provided to the pixel PX through the data line DL.

[0078] The scan driver 23 may generate a scan signal in response to the scan control signal SCS, and may output the scan signal to the scan line SL. The scan signal may be provided to the pixel PX and the optical sensor PS through the scan line SL.

[0079] The power supply unit 24 may generate at least one power voltage for driving the pixel PX and the optical sensor PS, and may output the at least one power voltage to at least one power voltage line VL. The at least one power voltage may be provided to the pixel PX and the optical sensor PS through the power voltage line VL.

[0080] The emission control driver 25 may generate an emission control signal in response to the emission control driving signal ECS, and may output the emission control signal to the emission control line EML. The emission control driver 25 may be formed or provided separately from the scan driver 23, or may be integrated into the scan driver 23.

[0081] The readout circuit 40 may be connected to the optical sensor PS through the readout line ROL, and may receive an electrical signal corresponding to the amount of light received by the optical sensor PS (e.g., a current flowing through the optical sensor PS). The readout circuit 40 may generate data corresponding to the amplitude of the electrical signal input from the optical sensor PS (e.g., digital sensing data), and may transmit them to the processor 50. In the case of sensing a user's fingerprint using the electrical signal from the optical sensor PS, the processor 50 may analyze the digital sensing data to determine whether the digital sensing data is the same as a pre-registered user's fingerprint. When the pre-registered fingerprint and the digital sensing data transmitted from the readout circuit 40 are the same, a preset function may be executed.

[0082] The processor 50 may provide the image signal RGB and the control signal CTS provided from the outside to the timing controller 21. The processor 50 may further include a graphics processing unit (hereinafter, referred to as a GPU) that provides graphics for the image signal RGB. The image signal RGB, which is an image source that has been subjected to graphics processing in the GPU, may be provided to the timing controller 21. The image signal RGB may have a specific frequency (e.g., a frequency of 120 Hz or 30 Hz).

[0083] The control signal CTS output from the processor 50 may include a first mode control signal MO1, a second mode control signal MO2, a clock signal, an enable signal, etc. The first mode control signal MO1 may include a display mode signal for displaying a normal image. The second mode control signal MO2 may include a sensing mode signal for sensing a user's fingerprint, etc. In one embodiment, the second mode control signal MO2 may be a signal that causes at least some pixels PX (e.g., green pixels) to emit light during a period of performing a sensing mode. Therefore, when the pixel PX is used as a light source, a user's fingerprint, etc. may be sensed.

[0084] The processor 50 may provide the first mode control signal MO1 to the timing controller 21 so as to display an image on the display panel 10. The processor 50 may provide the second mode control signal MO2 to the timing controller 21 so as to sense a user's fingerprint, etc. The timing controller 21 may drive the pixels PX of the display panel 10 in response to the first mode control signal MO1. The timing controller 21 may drive the pixels PX of the display panel 10 and the optical sensor PS in response to the second mode control signal MO2.

[0085] Figure 3 2 is a cross-sectional view illustrating a schematic cross section of an active area AA of a display device 1 and a method for sensing a fingerprint of a finger F according to an embodiment. Figure 3 A method for sensing a fingerprint of a finger F located on the display device 1 in the active area AA is shown.

[0086] Apart from Figure 1 and Figure 2 In addition, reference Figure 3 The display device 1 may include a display panel 10 and a window WDL disposed on the display panel 10. The display panel 10 may include a substrate SUB, a display layer DPL disposed on the substrate SUB, and an encapsulation layer ENL and an optical filter layer OFL disposed on the display layer DPL.

[0087] The substrate SUB may be a base member for forming or arranging components of the display panel 10. The substrate SUB may include an active area AA and a non-active area NA. For example, an area corresponding to a portion of the substrate SUB may be defined as the active area AA, and an area corresponding to another portion of the substrate SUB may be defined as the non-active area NA.

[0088] The display layer DPL may include pixels PX and optical sensors PS disposed on a substrate SUB. The pixels PX and the optical sensors PS may be disposed and / or formed on the substrate SUB to be located in the active area AA.

[0089] For simplicity, Figure 3An embodiment is shown in which pixels PX and optical sensors PS are alternately arranged one by one along at least one direction (e.g., a first direction DR1 and / or a second direction DR2 intersecting a third direction DR3), but the arrangement structure, number and / or resolution of the pixels PX and the optical sensors PS may be variously changed depending on the embodiment.

[0090] In one embodiment, the pixel PX and the optical sensor PS may be formed simultaneously. For example, in each pixel PX, a pixel circuit (eg, Figure 5 The pixel circuit PXC) and the optical sensor circuit (eg, Figure 5 After the optical sensor circuit PSC of the pixel PX is formed on the substrate SUB, the light emitting element (eg, Figure 5 The light emitting element EL) and the photoelectric conversion element (for example, Figure 5 The photoelectric conversion element PD) (or at least a portion of the light emitting element EL and at least a portion of the photoelectric conversion element PD) can be simultaneously formed on the substrate SUB on which the pixel circuit PXC and the optical sensor circuit PSC are formed.

[0091] As in the embodiment, the display device 1 in which the optical sensor PS is provided together with the pixel PX or formed inside the display panel 10 can have a reduced thickness compared to the display device of the comparative example in which the separately provided optical sensor is provided or attached on one side of the display panel. In addition, the display device 1 according to the embodiment can increase the amount of light received by the optical sensor PS compared to the display device of the comparative example.

[0092] The encapsulation layer ENL may be disposed and / or formed on the display layer DPL to cover at least the pixels PX and the optical sensors PS. The encapsulation layer ENL may protect the pixels PX and the optical sensors PS.

[0093] The optical filter layer OFL may be located above the pixel PX and the optical sensor PS. For example, the optical filter layer OFL may be located on the encapsulation layer ENL. The optical filter layer OFL may include a light blocking member LS, a color filter CF, and an optical filter OF. In one embodiment, the optical filter layer OFL may further include a first overcoat layer OC1 covering the light blocking member LS, the color filter CF, and the optical filter OF.

[0094] The light blocking member LS may be disposed above the display layer DPL (e.g., above the encapsulation layer ENL covering the display layer DPL) to be located between the pixel PX and the optical sensor PS and / or at a boundary thereof. The light blocking member LS may include an opening that exposes at least a portion of the pixel PX (e.g., a light emitting unit or an emission region of each of the pixels PX). In addition, the light blocking member LS may include an opening that exposes at least a portion of the optical sensor PS (e.g., a light receiving portion or a light receiving region of each of the optical sensors PS).

[0095] The color filter CF may be disposed in the active area AA to overlap with the pixel PX. For example, the color filter CF corresponding to the color and / or wavelength band of light emitted from the pixel PX may be disposed above the pixel PX.

[0096] The optical filter OF may be disposed in the active area AA to overlap the optical sensor PS. For example, the optical filter OF may be disposed above the optical sensor PS. In one embodiment, the optical filter OF may be a thin film having a thickness smaller than that of the color filter CF disposed on the pixel PX. In one embodiment, the optical filter OF may be a thin film having a thickness smaller than that of the light blocking member LS. For example, each optical filter OF may have a reduced thickness to meet a target transmittance range of light for light sensing in each optical sensor PS.

[0097] Each of the optical filters OF, which is a filter for transmitting light (e.g., visible light) of some wavelength bands including light (e.g., green light) emitted from at least some of the pixels PX and blocking short-wavelength light of a specific wavelength band or shorter wavelength bands (e.g., short-wavelength external light including ultraviolet rays, etc. belonging to a wavelength band of 300nm or 350nm or less), may be a metal thin film or a color filter of a specific color. The optical filter OF has a thickness smaller than that of the color filter CF provided on the pixel PX, and thus may have a higher transmittance to visible light, etc. For example, as the thickness of the optical filter OF is reduced, the amount (or ratio) of reflected light required for fingerprint sensing, etc. absorbed by the optical filter OF may be reduced, and the amount of light received by the optical sensor PS may be increased.

[0098] The window WDL may be disposed over the display panel 10 to protect the display panel 10. For example, the window WDL may be disposed on a display surface of the display panel 10.

[0099] In the case where the user's finger F (e.g., a portion of the finger F including the fingerprint area) is in contact with (or close to) the top surface of the window WDL, light emitted from the pixel PX of the display panel 10 may be reflected from the ridge RID of the finger F and the valley VAL disposed between the ridge RID of the finger F. The portion corresponding to the ridge RID of the finger F may be in contact with the top surface of the window WDL, while the portion corresponding to the valley VAL of the finger F may not be in contact with the window WDL. Therefore, the top surface of the window WDL may be in contact with the air at the portion corresponding to the valley VAL of the finger F.

[0100] Since the refractive index of the finger F is different from that of the air, the amount of light reflected from the ridge RID and the amount of light reflected from the valley VAL may be different. Therefore, the shape of the fingerprint formed on the finger F may be obtained based on the difference in the amount of light received by the optical sensor PS with respect to the reflected light reflected from the finger F. For example, each optical sensor PS may output an electrical signal corresponding to the amount of light received, and the shape of the fingerprint formed on the finger F may be sensed or recognized using the electrical signal output from the optical sensor PS.

[0101] Figure 4 2 is a cross-sectional view illustrating a schematic cross section of an active area AA of a display device 1 and a method for sensing a fingerprint of a finger F according to an embodiment.

[0102] Apart from Figures 1 to 3 In addition, reference Figure 4 , the display device 1 may further include a touch sensor layer TSL. In one embodiment, the touch sensor layer TSL may be disposed and / or formed inside the display panel 10. For example, the touch sensor layer TSL may be disposed between the encapsulation layer ENL and the optical filter layer OFL, and may be formed directly on the encapsulation layer ENL. The position of the touch sensor layer TSL may vary according to the embodiment.

[0103] The touch sensor layer TSL may include a sensing pattern TSE for sensing a user's touch input (e.g., a touch electrode for generating an electrical signal according to the touch input) and a second overcoat layer OC2 covering the sensing pattern TSE. According to embodiments, the type, structure, and material of the sensing pattern TSE included in the touch sensor layer TSL may be variously changed.

[0104] The display device 1 may sense a user's touch input provided to a side of the display surface (eg, a top surface of the window WDL) using the touch sensor layer TSL. Figure 4 Other components of the display device 1 and the method for sensing the fingerprint of the finger F using the optical sensor PS according to the embodiment of the present invention are the same as those according to Figure 3 The display device 1 of the embodiments is substantially similar or identical to those of the display device 1 , and thus a detailed description thereof will be omitted.

[0105] Figure 5 is a circuit diagram of a pixel PX and an optical sensor PS according to one embodiment.

[0106] Figure 5 An embodiment is disclosed in which the scan line SL connected to each pixel PX includes a scan initialization line GIL, a scan control line GCL, a first scan line GWL, and a first_first scan line GWL_1. In one embodiment, the scan line SL may further include a reset control line RSTL connected to at least one optical sensor PS.

[0107] In one embodiment, the reset control line RSTL may be connected to one of the scan initialization line GIL, the scan control line GCL, and the first_first scan line GWL_1, or may be separated from the scan initialization line GIL, the scan control line GCL, and the first_first scan line GWL_1 and receive a separate reset signal. In one embodiment, the reset signal may be sequentially applied to the optical sensors PS in units of at least one row or block, or may be simultaneously applied to the optical sensors PS disposed in the active area AA. For example, the optical sensors PS may be reset sequentially or simultaneously.

[0108] In one embodiment, the optical sensor PS may be driven using at least one of the scan signals for driving the pixels PX. For example, the optical sensor PS may be driven using a first scan signal transmitted to the first scan line GWL.

[0109] Apart from Figures 1 to 4 In addition, reference Figure 5 , the pixel PX may include a light emitting element EL and a pixel circuit PXC (or a pixel driver) connected to the light emitting element EL.

[0110] The light emitting element EL may be connected between the second driving voltage line VSL to which the second power voltage ELVSS is applied and the pixel circuit PXC. The light emitting element EL as the light source of the pixel PX may emit light according to the driving current provided from the pixel circuit PXC. As the driving current increases, the light emitting element EL may emit light with high brightness.

[0111] In one embodiment, the light emitting element EL may be an organic light emitting diode, but is not limited thereto. For example, the light emitting element EL may be an inorganic light emitting element, a quantum dot light emitting element, or other types of light emitting elements.

[0112] The pixel circuit PXC can control the light emission timing and brightness of the light emitting element EL by controlling the driving current provided to the light emitting element EL. The pixel circuit PXC may include a driving transistor DT, a switching element, and a capacitor Cst. In one embodiment, the switching element may include a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, and a sixth transistor T6.

[0113] The driving transistor DT may include a gate electrode, a first electrode, and a second electrode. One of the first electrode and the second electrode may be a source electrode, and the other of the first electrode and the second electrode may be a drain electrode. The driving transistor DT may control a drain-source current (hereinafter, referred to as a "driving current") flowing between the first electrode and the second electrode according to a voltage of a data signal applied to the gate electrode.

[0114] The first transistor T1 may include a gate electrode connected to the first scan line GWL, a first electrode connected to the data line DL, and a second electrode connected to the first electrode of the driving transistor DT. The first transistor T1 may be turned on by a first scan signal supplied to the first scan line GWL to connect the first electrode of the driving transistor DT to the data line DL. When the first transistor T1 is turned on, a voltage of a data signal supplied from the data line DL may be applied to the first electrode of the driving transistor DT.

[0115] The second transistor T2 may include a gate electrode connected to a scan control line GCL, a first electrode connected to a second electrode of the driving transistor DT, and a second electrode connected to a gate electrode (or a second node N2) of the driving transistor DT. The second transistor T2 may be turned on by a scan control signal provided to the scan control line GCL to connect the gate electrode of the driving transistor DT to the second electrode of the driving transistor DT. When the second transistor T2 is turned on, the driving transistor DT may be driven as a diode.

[0116] The third transistor T3 may include a gate electrode connected to the scan initialization line GIL, a first electrode connected to the gate electrode of the driving transistor DT, and a second electrode connected to the first initialization voltage line VIL1. The third transistor T3 may be turned on by a scan initialization signal provided from the scan initialization line GIL to connect the gate electrode of the driving transistor DT to the first initialization voltage line VIL1. When the third transistor T3 is turned on, the first initialization voltage VINT of the first initialization voltage line VIL1 may be applied to the gate electrode of the driving transistor DT.

[0117] The fourth transistor T4 may include a gate electrode connected to an emission control line EML, a first electrode connected to a first driving voltage line VDL, and a second electrode connected to a first electrode of the driving transistor DT. The fourth transistor T4 may be turned on by an emission control signal provided from the emission control line EML to connect the first electrode of the driving transistor DT to the first driving voltage line VDL to which the first power voltage ELVDD is applied. When the fourth transistor T4 is turned on, the first power voltage ELVDD may be applied to the first electrode of the driving transistor DT.

[0118] The fifth transistor T5 may include a gate electrode connected to the emission control line EML, a first electrode connected to the second electrode of the driving transistor DT, and a second electrode connected to the light emitting element EL. The fifth transistor T5 may be turned on by an emission control signal provided from the emission control line EML to connect the driving transistor DT to the light emitting element EL. When both the fourth transistor T4 and the fifth transistor T5 are turned on, a driving current having a magnitude corresponding to the voltage of the gate electrode of the driving transistor DT may flow through the light emitting element EL.

[0119] The sixth transistor T6 may include a gate electrode connected to the first_first scan line GWL_1, a first electrode connected to the anode electrode of the light emitting element EL, and a second electrode connected to the second initialization voltage line VIL2. The sixth transistor T6 may be turned on by the first_first scan signal provided from the first_first scan line GWL_1 to connect the anode electrode of the light emitting element EL to the second initialization voltage line VIL2. When the sixth transistor T6 is turned on, the second initialization voltage VAINT of the second initialization voltage line VIL2 may be applied to the anode electrode of the light emitting element EL.

[0120] The capacitor Cst may be connected between the gate electrode of the driving transistor DT and the first driving voltage line VDL. The capacitor Cst may store a voltage corresponding to a voltage of a data signal applied to the gate electrode of the driving transistor DT.

[0121] In one embodiment, the active layer of each of the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 and the driving transistor DT (e.g., a semiconductor pattern including a channel region) may be formed of one of polysilicon, amorphous silicon, and an oxide semiconductor. For example, the active layer of each of the driving transistor DT, the first transistor T1, and the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be made of polysilicon. The active layer of each of the second transistor T2 and the third transistor T3 may be formed of an oxide semiconductor. In this case, the driving transistor DT, the first transistor T1, and the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be formed of a P-type transistor (e.g., a P-type MOSFET), and the second transistor T2 and the third transistor T3 may be formed of an N-type transistor (e.g., an N-type MOSFET).

[0122] The optical sensor PS may include a photoelectric conversion element PD (or a light sensing element) and an optical sensor circuit PSC (or a sensor driver) for controlling a sensing current according to a photoelectric current of the photoelectric conversion element PD.

[0123] The photoelectric conversion element PD can be connected between the optical sensor circuit PSC and the second driving voltage line VSL. The photoelectric conversion element PD can convert external incident light into an electrical signal. In one embodiment, the photoelectric conversion element PD can be a photodiode including an anode electrode, a cathode electrode, and a photoelectric conversion layer arranged between the anode electrode and the cathode electrode. In one embodiment, the photoelectric conversion element PD can be an inorganic photodiode or a phototransistor formed of a PN type or PIN type inorganic material. Optionally, the photoelectric conversion element PD can also be an organic photodiode including an electron donating material that produces donor ions and an electron accepting material that produces acceptor ions.

[0124] When the photoelectric conversion element PD is exposed to external light, photocharges may be generated, and the generated photocharges may be accumulated in the anode electrode of the photoelectric conversion element PD. In this case, the voltage of the first node N1 electrically connected to the anode electrode of the photoelectric conversion element PD may increase. When the second initialization voltage line VIL2 and the readout line ROL are connected according to the conduction of the first sensor transistor LT1 and the third sensor transistor LT3, the sensing voltage may be transmitted to the third node N3 between the readout line ROL and the third sensor transistor LT3 in proportion to the voltage of the first node N1 in which the charge is accumulated.

[0125] The optical sensor circuit PSC may include a sensor transistor for controlling a sensing current generated by the photoelectric conversion element PD. For example, the optical sensor circuit PSC may include a first sensor transistor LT1, a second sensor transistor LT2, and a third sensor transistor LT3.

[0126] The first sensor transistor LT1 may include a gate electrode connected to the first node N1, a first electrode connected to the second initialization voltage line VIL2, and a second electrode connected to the first electrode of the third sensor transistor LT3. The first sensor transistor LT1 may be turned on by the voltage of the first node N1 to connect the second initialization voltage line VIL2 to the first electrode of the third sensor transistor LT3. The first sensor transistor LT1 may be a source follower amplifier that generates a source-drain current proportional to the amount of charge of the first node N1 input to its gate electrode. Figure 5 An embodiment in which the first electrode of the first sensor transistor LT1 is connected to the second initialization voltage line VIL2 is disclosed, but the embodiment is not limited thereto. For example, the first electrode of the first sensor transistor LT1 may be connected to the first driving voltage line VDL or the first initialization voltage line VIL1.

[0127] The second sensor transistor LT2 may include a gate electrode connected to a reset control line RSTL, a first electrode connected to a reset voltage line VRL, and a second electrode connected to the first node N1. The second sensor transistor LT2 may be turned on by a reset control signal supplied to the reset control line RSTL to connect the reset voltage line VRL to which a reset voltage Vrst is applied to the first node N1. When the second sensor transistor LT2 is turned on, a voltage of the first node N1 may be initialized by the reset voltage Vrst.

[0128] The third sensor transistor LT3 may include a gate electrode connected to the first scan line GWL, a first electrode connected to the second electrode of the first sensor transistor LT1, and a second electrode connected to the readout line ROL. The third sensor transistor LT3 may be turned on by a first scan signal provided to the first scan line GWL to connect the second electrode of the first sensor transistor LT1 and the readout line ROL. When the third sensor transistor LT3 is turned on, an electrical signal corresponding to the photoelectric current flowing through the optical sensor PS may be transmitted to the readout circuit 40 (e.g., a readout IC) through the readout line ROL.

[0129] In one embodiment, the active layer of each of the first sensor transistor LT1, the second sensor transistor LT2, and the third sensor transistor LT3 may be formed of one of polysilicon, amorphous silicon, and an oxide semiconductor. For example, the active layer of each of the first sensor transistor LT1 and the third sensor transistor LT3 may be made of polysilicon, and the active layer of the second sensor transistor LT2 may be made of an oxide semiconductor. In this case, the first sensor transistor LT1 and the third sensor transistor LT3 may be formed of a P-type transistor (e.g., a P-type MOSFET), and the second sensor transistor LT2 may be formed of an N-type transistor (e.g., an N-type MOSFET).

[0130] Figure 6 is a plan view showing an arrangement structure of a pixel PX, an optical sensor PS, a color filter CF, and an optical filter OF according to one embodiment. Figure 7 is a plan view showing an arrangement structure of a pixel PX, an optical sensor PS, a color filter CF, and an optical filter OF according to one embodiment. Figure 6 and Figure 7 Various embodiments are shown in relation to the color filter CF provided on the pixel PX. Figure 8 is a plan view showing a pixel PX, an optical sensor PS, and a light blocking member LS according to one embodiment. Figures 6 to 8 The pixel PX, the optical sensor PS, the color filter CF, the optical filter OF, and the light blocking member LS provided in a portion of the active area AA of the display device 1 are illustrated.

[0131] Apart from Figures 1 to 5 In addition, reference Figures 6 to 8 , the pixel PX may include a first color pixel (also referred to as a "first pixel") PX1 that emits light of a first color, a second color pixel (also referred to as a "second pixel") PX2 that emits light of a second color, and a third color pixel (also referred to as a "third pixel") PX3 that emits light of a third color. In one embodiment, the first color pixel PX1 may be a green pixel that emits green light, the second color pixel PX2 may be a red pixel that emits red light, and the third color pixel PX3 may be a blue pixel that emits blue light. However, the embodiment is not limited thereto, and the type and configuration of the pixel PX and the color of light emitted from each pixel PX may vary according to the embodiment.

[0132] In one embodiment, at least one first color pixel PX1, at least one second color pixel PX2, and at least one third color pixel PX3 disposed adjacent to each other in one unit pixel area UPXA may constitute one unit pixel. For example, two first color pixels PX1, one second color pixel PX2, and one third color pixel PX3 disposed in each unit pixel area UPXA may constitute one unit pixel. Each unit pixel may be defined as a minimum pixel PX for displaying white light. Various colors may be presented by adjusting the light emission ratio of the pixels PX included in each unit pixel.

[0133] In one embodiment, the first color pixel PX1 may be arranged in an odd pixel column, and the second color pixel PX2 and the third color pixel PX3 may be arranged in an even pixel column. The optical sensor PS may be provided in an even pixel column or an odd pixel column, and may be provided with a resolution that is the same as or different from the resolution of the pixel PX provided in each pixel column.

[0134] In one embodiment, the optical sensor PS may be disposed in an odd-numbered pixel column in which the first color pixel PX1 is disposed. For example, the optical sensor PS may be disposed in each odd-numbered pixel column in which the first color pixel PX1 is disposed. In one embodiment, the sensing area SA of each of the optical sensors PS may be disposed adjacent to at least one first emission area EA1, and each optical sensor PS may generate a sensing signal using light emitted from the first emission area EA1. For example, each optical sensor PS may be disposed between the first emission areas EA1 of at least two first color pixels PX1 arranged in the pixel column in which the optical sensor PS is located, and may operate using light emitted from adjacent first color pixels PX1 as a light source. The shape, arrangement structure, resolution, etc. of the pixel PX and the optical sensor PS are not limited to Figures 6 to 8 The embodiments shown in FIG. 1 and may be variously changed depending on the embodiments.

[0135] Each of the pixels PX may include a corresponding emission area EA (or a light emitting unit including a corresponding light emitting element EL). For example, the first color pixel PX1 may include a first emission area EA1 that emits a first light of a first color (e.g., green light having a peak wavelength in the range of 510nm to 550nm), and the second color pixel PX2 may include a second emission area EA2 that emits a second light of a second color (e.g., red light having a peak wavelength in the range of 610nm to 650nm). The third color pixel PX3 may include a third emission area EA3 that emits a third light of a third color (e.g., blue light having a peak wavelength in the range of 440nm to 480nm).

[0136] For simplicity, Figures 6 to 8 , the position of the corresponding pixel PX is displayed relative to the emission area EA of each pixel PX, but the pixel PX may have an area larger than the area of ​​the emission area EA. For example, the pixel area where each pixel PX is set or formed may include a pixel circuit area forming a pixel circuit PXC of the corresponding pixel PX and an emission area EA forming a light-emitting element EL of the corresponding pixel PX. In one embodiment, according to the luminous efficiency or white balance of the first color pixel PX1, the second color pixel PX2, and / or the third color pixel PX3, the first color pixel PX1, the second color pixel PX2, and / or the third color pixel PX3 may include an emission area EA having different sizes (e.g., different areas), but the embodiment is not limited thereto.

[0137] The color filter CF may be disposed in the emission area EA of the pixel PX (or the light-emitting unit including the corresponding light-emitting element EL) and its surrounding area. For example, a first color filter CF1 (e.g., a color filter of the first color) for selectively transmitting light of the first color may be disposed in the first emission area EA1 of the first color pixel PX1, and a second color filter CF2 (e.g., a color filter of the second color) for selectively transmitting light of the second color may be disposed in the second emission area EA2 of the second color pixel PX2. A third color filter CF3 (e.g., a color filter of the third color) for selectively transmitting light of the third color may be disposed in the third emission area EA3 of the third color pixel PX3. In one embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be a green filter, a red filter, and a blue filter, respectively.

[0138] The color filter CF may be completely disposed in the emission area EA to cover at least the emission area EA. For example, the color filter CF may be disposed over the pixel PX or provided to completely cover the emission area EA of the pixel PX.

[0139] In one embodiment, if Figure 6 As shown in , the color filter CF may be formed to be wide enough to contact the adjacent color filter CF in the first direction DR1 and / or the second direction DR2, or to be very close to the adjacent color filter CF. Figure 7 As shown in , the color filters CF may have a smaller area and may be spaced apart from each other by a greater distance. For example, adjacent color filters CF may be spaced apart from each other by a distance corresponding to the width of the top surface of the light blocking member LS interposed therebetween.

[0140] The optical sensor PS may be disposed in an area for sensing light. For example, when it is desired to use the optical sensor PS in the active area AA to sense a fingerprint or the like, the optical sensor PS may be disposed in the active area AA together with the pixel PX. For example, the optical sensor PS may be disposed between the pixels PX. The optical sensor PS may be disposed uniformly or non-uniformly across the active area AA, or may be disposed only in a portion of the active area AA. In one embodiment, the optical sensor PS may be disposed between the first color pixels PX1 in each pixel column in which the first color pixels PX1 are disposed. However, the embodiment is not limited thereto, and the arrangement structure, position, number and / or resolution of the optical sensor PS may be variously changed according to the embodiment.

[0141] The optical sensor PS may include a sensing area SA. The photoelectric conversion element PD may be provided in the sensing area SA of each of the optical sensors PS.

[0142] Each of the sensing areas SA may include a light receiving portion provided with an optical filter OF. For example, an optical filter OF capable of transmitting light of a wavelength band corresponding to light of a first color emitted from the first color pixel PX1, light of a second color emitted from the second color pixel PX2, and / or light of a third color emitted from the third color pixel PX3 may be provided in the light receiving portion (or light receiving part) of each of the sensing areas SA. For example, an optical filter OF capable of transmitting visible light including light of a first color, light of a second color, and light of a third color, or an optical filter OF capable of selectively transmitting any one of light of a first color, light of a second color, and light of a third color may be provided in each of the sensing areas SA.

[0143] In one embodiment, the light receiving portion of the optical sensor PS may be a region corresponding to the sensing area SA of the optical sensor PS. For example, the light receiving portion of the optical sensor PS as a region of the photoelectric conversion element PD exposed by the second opening OPN2 of the light blocking member LS may be a region substantially the same as the sensing area SA, or may be a region including the sensing area SA. Each of the optical sensors PS may output a sensing signal according to the amount of light received by the light receiving portion (e.g., the amount of light incident on each photoelectric conversion element PD).

[0144] In one embodiment, the optical filter OF may be disposed on the light receiving portion of each of the optical sensors PS. For example, in the sensing area SA (or the sensing unit including the photoelectric conversion element PD) of each of the optical sensors PS, the optical filter OF may be disposed on each of the optical sensors PS. In one embodiment, each of the optical filters OF may completely cover the light receiving portion of the optical sensor PS in each sensing area SA. In one embodiment, the optical filter OF may have an area larger than that of each sensing area SA, and may be spaced apart from the color filters CF disposed adjacent to each other with the light blocking member LS interposed therebetween.

[0145] In one embodiment, each optical filter OF may be a metal film or a color filter capable of transmitting at least a first color of light (e.g., a color filter similar to the first color filter CF1 for selectively transmitting light of the first color, which is a first color filter having a thickness smaller than that of the first color filter CF1), and each optical sensor PS may operate using light emitted from at least one adjacent first color pixel PX1 as a light source.

[0146] In one embodiment, the optical sensors PS may constitute a fingerprint sensor disposed in the active area AA. For example, each of the optical sensors PS may be a sensing pixel of a fingerprint sensor.

[0147] The light blocking member LS may be disposed in the active area AA and may be located in a non-emission area and / or a non-sensing area corresponding to the periphery and / or edge of the pixel PX and the optical sensor PS. The light blocking member LS may include an opening exposing the emission area EA of the pixel PX and the sensing area SA of the optical sensor PS, and may surround the emission area EA and the sensing area SA. For example, the light blocking member LS may include a first opening OPN1 corresponding to the emission area EA and a second opening OPN2 corresponding to the sensing area SA, and may surround the emission area EA and the sensing area SA.

[0148] The first opening OPN1 may expose at least a portion of the light emitting element EL disposed in the emission area EA. The second opening OPN2 may expose at least a portion of the photoelectric conversion element PD disposed in the sensing area SA.

[0149] In one embodiment, each of the second openings OPN2 may define a light receiving portion of each of the optical sensors PS. For example, light may be incident on the optical sensors PS through the second openings OPN2.

[0150] Fig. 9 It is shown along Figure 6 and Figure 82 is a cross-sectional view of an example of a cross section of the display device 1 taken along line II′. Fig.10 It is shown along Figure 7 and Figure 8 1 is a cross-sectional view of an example of a cross section of the display device 1 taken along line II-II'. For example, Fig. 9 and Fig.10 A cross section according to different embodiments regarding an optical filter layer OFL disposed in an active area AA of the display device 1 is shown.

[0151] Apart from Figures 1 to 8 In addition, reference Fig. 9 and Fig.10 The substrate SUB as a base member (or base layer) of the display panel 10 may be rigid or flexible. In one embodiment, the substrate SUB may be one of a glass substrate, a quartz substrate, a glass ceramic substrate, a film substrate including a polymer organic material, and a plastic substrate, but is not limited thereto.

[0152] The active area AA and the non-active area NA may be defined on the substrate SUB. The pixels PX and the optical sensors PS may be located in the active area AA on the substrate SUB. For example, the active area AA may include each pixel area including each emission area EA and each optical sensor area including each sensing area SA.

[0153] The panel circuit layer PCL (e.g., pixel circuit layer or thin film transistor layer) may be disposed on the substrate SUB. The panel circuit layer PCL may include a barrier layer 110 (or buffer layer) and circuit elements and / or signal lines disposed on the barrier layer 110. For example, the panel circuit layer PCL may include a first thin film transistor TFT1 (also referred to as a "pixel transistor") provided to each pixel PX and a second thin film transistor TFT2 (also referred to as a "sensor transistor") provided to each optical sensor PS. For example, the first thin film transistor TFT1 may be Figure 5 The driving transistor DT or one of the first to sixth transistors T1 to T6, and the second thin film transistor TFT2 may be Figure 5 The panel circuit layer PCL may further include other circuit elements (e.g., other transistors and capacitor Cst) included in each pixel circuit PXC, other circuit elements (e.g., other sensor transistors) included in each optical sensor circuit PSC, and signal lines connected to the pixel PX and the optical sensor PS.

[0154] The barrier layer 110 may be disposed on the substrate SUB. The barrier layer 110 may include an inorganic insulating material including silicon nitride, silicon oxide, silicon oxynitride, etc., or other insulating materials.

[0155] An active layer (or semiconductor pattern) of each of the thin film transistors TFT may be disposed on the barrier layer 110. The active layer may include polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, oxide semiconductor, or other semiconductor materials.

[0156] The active layer of the first thin film transistor TFT1 may include a first channel region A1 and a first source region S1 and a first drain region D1 doped with impurities and having conductivity. The first channel region A1 may overlap with the first gate electrode G1 in a third direction DR3 that is a thickness direction of the substrate SUB. The first source region S1 and the first drain region D1 may not overlap with the first gate electrode G1.

[0157] The active layer of the second thin film transistor TFT2 may include a second channel region A2 and a second source region S2 and a second drain region D2 doped with impurities and having conductivity. The second channel region A2 may overlap with the second gate electrode G2 in the third direction DR3 which is the thickness direction of the substrate SUB. The second source region S2 and the second drain region D2 may not overlap with the second gate electrode G2.

[0158] In one embodiment, the first thin film transistor TFT1 and the second thin film transistor TFT2 may be disposed on substantially the same layer over the substrate SUB. In addition, at least a portion of the first thin film transistor TFT1 and at least a portion of the second thin film transistor TFT2 may be simultaneously formed by the same process. Therefore, the thickness of the display device 1 including the pixel PX and the optical sensor PS may be reduced or minimized, and the manufacturing process of the display device 1 may become efficient and / or simplified.

[0159] The first insulating layer 120 (eg, a gate insulating layer) may be disposed on an active layer of the thin film transistor TFT. In one implementation, the first insulating layer 120 may include at least one inorganic insulating layer including an inorganic insulating material.

[0160] The gate electrode of each of the thin film transistors TFT may be disposed on the first insulating layer 120. For example, the first gate electrode G1 of the first thin film transistor TFT1 and the second gate electrode G2 of the second thin film transistor TFT2 may be disposed on the first insulating layer 120. In one embodiment, the gate electrode may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. The gate electrode may also include other conductive materials. In one embodiment, Figure 5 A first electrode of the capacitor Cst and / or at least one signal line may be further disposed on the first insulating layer 120 .

[0161] The second insulating layer 130 (eg, the first interlayer insulating layer) may be disposed on the gate electrode of the thin film transistor TFT. In one embodiment, the second insulating layer 130 may include at least one inorganic insulating layer including an inorganic insulating material. In one embodiment, Figure 5 A second electrode of the capacitor Cst and / or at least one signal line may be disposed on the second insulating layer 130 .

[0162] The third insulating layer 140 (e.g., a second interlayer insulating layer) may be disposed on the second insulating layer 130, the second electrode of the capacitor Cst, and / or at least one signal line. In one embodiment, the third insulating layer 140 may include at least one inorganic insulating layer including an inorganic insulating material. In another embodiment, the second electrode of the capacitor Cst may be disposed on the same layer as the first anode connection electrodes ANE11 and ANE21, and the third insulating layer 140 may be omitted.

[0163] The first anode connection electrodes ANE11 and ANE21 (or the first bridge pattern) may be disposed on the third insulating layer 140. The first anode connection electrodes ANE11 and ANE21 may be connected to the drain regions D1 and D2 of the corresponding thin film transistors TFT through corresponding contact holes formed through the first insulating layer 120, the second insulating layer 130, and the third insulating layer 140. Fig. 9 and Fig.10 An embodiment in which the first anode connection electrodes ANE11 and ANE21 are connected to the first drain region D1 and the second drain region D2, respectively, is shown, but the embodiment is not limited thereto. For example, each of the first anode connection electrodes ANE11 and ANE21 may be connected to one of the first source region S1 and the first drain region D1 or one of the second source region S2 and the second drain region D2, depending on the conductivity type (e.g., N-type or P-type) of the first thin film transistor TFT1 and the second thin film transistor TFT2. In one embodiment, the first anode connection electrodes ANE11 and ANE21 may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0164] A fourth insulating layer 151 (e.g., a first planarization layer) may be disposed on the first anode connection electrodes ANE11 and ANE21. In one embodiment, the fourth insulating layer 151 may include at least one organic insulating layer including acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, or other organic insulating materials. The fourth insulating layer 151 may planarize a stepped portion formed by the thin film transistor TFT.

[0165] The second anode connection electrodes ANE12 and ANE22 (or the second bridge pattern) may be disposed on the fourth insulating layer 151. The second anode connection electrodes ANE12 and ANE22 may be connected to the first anode connection electrodes ANE11 and ANE21, respectively, through contact holes formed through the fourth insulating layer 151. In one embodiment, the second anode connection electrodes ANE12 and ANE22 may include the same material as the first anode connection electrodes ANE11 and ANE21.

[0166] A fifth insulating layer 153 (eg, a second planarization layer) may be disposed on the second anode connection electrodes ANE12 and ANE22 . In one implementation, the fifth insulating layer 153 may include the same material as the fourth insulating layer 151 .

[0167] In one embodiment, the second anode connection electrodes ANE12 and ANE22 and / or the fifth insulating layer 153 may be omitted. For example, the first anode connection electrodes ANE11 and ANE21 may be directly connected to the light emitting element EL and the photoelectric conversion element PD.

[0168] The optical element layer OEL may be disposed on the fifth insulating layer 153. The optical element layer OEL may include a light emitting element EL of each of the pixels PX, a photoelectric conversion element PD of each of the optical sensors PS, and a bank 160. Each light emitting element EL may be located in each emission area EA (e.g., the emission area EA of the corresponding pixel PX), and each photoelectric conversion element PD may be located in each sensing area SA (e.g., the sensing area SA of the corresponding optical sensor PS). The bank 160 may define or separate each emission area EA and each sensing area SA.

[0169] Each light emitting element EL may include a pixel electrode 171 (e.g., an anode electrode), a light emitting layer 173, and a common electrode 180 (e.g., a cathode electrode). Each photoelectric conversion element PD may include a first electrode 175 (e.g., an anode electrode), a photoelectric conversion layer 177, and a common electrode 180. In one embodiment, the light emitting element EL and the photoelectric conversion element PD may share a common electrode 180.

[0170] The pixel electrode 171 of the light emitting element EL may be disposed on the fifth insulating layer 153. The pixel electrode 171 may be provided for each pixel PX. For example, the pixel electrode 171 of the light emitting element EL may be disposed in the emission area EA of the pixel PX. The pixel electrode 171 may be connected to the second anode connection electrode ANE12 through a contact hole formed through the fifth insulating layer 153.

[0171] In one embodiment, the pixel electrode 171 of the light emitting element EL may have a single-layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may have a structure including, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ) and multilayer structures of ITO / Mg, ITO / MgF, ITO / Ag and ITO / Ag / ITO of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au) or nickel (Ni).

[0172] In addition, the first electrode 175 of the photoelectric conversion element PD may be disposed on the fifth insulating layer 153. The first electrode 175 may be provided for each optical sensor PS. For example, the first electrode 175 of the photoelectric conversion element PD may be disposed in the sensing area SA of the optical sensor PS. The first electrode 175 may be connected to the second anode connection electrode ANE22 of the corresponding optical sensor PS through a contact hole formed through the fifth insulating layer 153.

[0173] In one embodiment, the first electrode 175 of the photoelectric conversion element PD may have a single-layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO. However, the embodiment is not limited thereto, and the material and / or structure of the first electrode 175 of the photoelectric conversion element PD may vary according to the embodiment.

[0174] The bank 160 may be disposed on the pixel electrode 171 and the first electrode 175. The bank 160 may be formed in a region overlapping the pixel electrode 171, for example, on an upper portion of an edge of the pixel electrode 171, and may include an opening exposing a portion of the pixel electrode 171. A region where the exposed pixel electrode 171 and the light emitting layer 173 overlap (or a region including the same) may be defined as an emission area EA of each pixel PX.

[0175] In addition, the bank 160 may be formed in a region overlapping with the first electrode 175, for example, formed on an upper portion of an edge of the first electrode 175, and may include an opening exposing the first electrode 175. The opening exposing the first electrode 175 may provide a space in which the photoelectric conversion layer 177 of each optical sensor PS is formed. The region where the exposed first electrode 175 and the photoelectric conversion layer 177 overlap (or a region including the same) may be defined as a sensing region SA (or light sensing region) of each optical sensor PS. For example, the bank 160 may be disposed around the emission region EA and the sensing region SA to surround each of the emission region EA and the sensing region SA.

[0176] In one embodiment, the bank 160 may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, polyphenylene sulfide resin, and benzocyclobutene (BCB). Alternatively, the bank 160 may include an inorganic material such as silicon nitride. The material of the bank 160 may vary according to the embodiment.

[0177] The light emitting layer 173 may be disposed on the pixel electrode 171 of the light emitting element EL exposed by the opening of the bank 160. The light emitting layer 173 may include a polymer material or a low molecular material. The light emitted from the light emitting layer 173 may contribute to image display. In one embodiment, a light emitting layer 173 may be provided for each pixel PX, and the light emitting layer 173 of each pixel PX may emit visible light of a color corresponding to the corresponding pixel PX. In another embodiment, the light emitting layer 173 may be a common layer shared by pixels PX of different colors, and a wavelength conversion layer corresponding to the color (or wavelength band) of light to be emitted from each of the pixels PX may be disposed in the emission area EA of at least some of the pixels PX.

[0178] In the case where the light emitting layer 173 is formed of an organic material, a hole injection layer and / or a hole transport layer may be disposed under each light emitting layer 173, and an electron injection layer and / or an electron transport layer may be stacked on each light emitting layer 173. They may be a single layer or multiple layers formed of an organic material.

[0179] The photoelectric conversion layer 177 may be disposed on the first electrode 175 of the photoelectric conversion element PD exposed by the opening of the bank 160. The photoelectric conversion layer 177 may generate photocharges corresponding to (e.g., proportional to) the incident light. The charges generated and accumulated in the photoelectric conversion layer 177 may be converted into an electrical signal required for photosensing (e.g., fingerprint sensing).

[0180] The photoelectric conversion layer 177 may include an electron donating material and an electron accepting material. The electron donating material may generate donor ions in response to light, and the electron accepting material may generate acceptor ions in response to light.

[0181] In one embodiment, when the photoelectric conversion layer 177 is formed of an organic material, the electron-donating material may include a compound such as subphthalocyanine (SubPc) or dibutyl phosphate (DBP), but is not limited thereto. The electron-accepting material may include a compound such as fullerene, a fullerene derivative, or diimide, but is not limited thereto. In another embodiment, when the photoelectric conversion layer 177 is formed of an inorganic material, the photoelectric conversion element PD may be a PN type or PIN type phototransistor.

[0182] In the case where the photoelectric conversion layer 177 is formed of an organic material, a hole injection layer and / or a hole transport layer may be disposed under each photoelectric conversion layer 177, and an electron injection layer and / or an electron transport layer may be disposed over each photoelectric conversion layer 177. They may be a single layer or multiple layers formed of an organic material.

[0183] In one embodiment, the sensing area SA may be an area that receives light having the same wavelength as the wavelength of light generated from the emission area EA of the adjacent pixel PX while using the light as a light source. For example, the sensing area SA may receive light having the same wavelength as the wavelength of light (e.g., green light) generated from the first emission area EA1 of at least one adjacent first color pixel PX1 while using the light as a light source.

[0184] The common electrode 180 may be disposed on the light emitting layer 173, the photoelectric conversion layer 177, and the bank 160. In one embodiment, the common electrode 180 may be disposed across the pixel PX and the optical sensor PS to cover the light emitting layer 173, the photoelectric conversion layer 177, and the bank 160. In one embodiment, the common electrode 180 may include a conductive material having a low work function, for example, Li, Ca, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF, Ba, or a compound thereof (for example, LiF / Ca or LiF / Al) or a mixture thereof (for example, a mixture of Ag and Mg, etc.). Alternatively, the common electrode 180 may include a transparent metal oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or the like.

[0185] In one embodiment, the light emitting element EL and the photoelectric conversion element PD may be substantially disposed on the same layer above the substrate SUB. For example, the light emitting element EL and the photoelectric conversion element PD may be disposed on an insulating layer (e.g., a fifth insulating layer 153) disposed on the uppermost portion of the panel circuit layer PCL. In addition, at least a portion of the light emitting element EL and at least a portion of the photoelectric conversion element PD may be formed simultaneously by the same process. Therefore, the thickness of the display device 1 including the pixel PX and the optical sensor PS may be reduced or minimized, and the manufacturing process of the display device 1 may become efficient and / or simplified.

[0186] The encapsulation layer ENL may be disposed on the optical element layer OEL. In one embodiment, the encapsulation layer ENL may include at least one inorganic layer and one organic layer to protect each of the light emitting layer 173 and the photoelectric conversion layer 177 from the penetration of oxygen or moisture or foreign matter such as dust. For example, the encapsulation layer ENL may have a structure in which a first inorganic layer 191, an organic layer 193, and a second inorganic layer 195 are stacked in sequence. In one embodiment, the first inorganic layer 191 and the second inorganic layer 195 may include silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, aluminum oxide, or other inorganic materials. In one embodiment, the organic layer 193 may include acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, or other organic materials.

[0187] The optical filter layer OFL may be disposed on the encapsulation layer ENL. The optical filter layer OFL may include a light blocking member LS, a color filter CF, an optical filter OF, and a first overcoat layer OC1.

[0188] The light blocking member LS may be disposed on the encapsulation layer ENL protecting the optical element layer OEL. The light blocking member LS may be disposed between the emission area EA and / or the sensing area SA in the active area AA and may surround the emission area EA and the sensing area SA.

[0189] The light blocking member LS may include a first opening OPN1 disposed in an area corresponding to the emission area EA of the pixel PX and a second opening OPN2 disposed in an area corresponding to the sensing area SA of the optical sensor PS. Each first opening OPN1 may be located in an area corresponding to each emission area EA. Each second opening OPN2 may be located in an area corresponding to each sensing area SA. The second opening OPN2 of the light blocking member LS may correspond to a light receiving portion of the photoelectric conversion element PD corresponding thereto. For example, each second opening OPN2 may correspond to a light receiving portion of the photoelectric conversion element PD.

[0190] although Fig. 9 and Fig.10An embodiment is shown in which the first opening OPN1 and the second opening OPN2 of the light blocking member LS have a width and / or area substantially the same as that of the opening of the bank 160 and are disposed in a region corresponding to the opening of the bank 160, but the embodiment is not limited thereto. For example, the size (e.g., area) and / or shape of the first opening OPN1 and / or the second opening OPN2 of the light blocking member LS may be changed in consideration of the light emission characteristics or viewing angle of the pixel PX, the light receiving rate of the optical sensor PS, etc. For example, each of the first opening OPN1 and the second opening OPN2 in the light blocking member LS may have a greater width and length than the opening in the bank 160 corresponding to the emission area EA and / or the sensing area SA.

[0191] The light blocking member LS may be formed of a material capable of absorbing and / or blocking light. For example, the light blocking member LS may be formed of a photosensitive resin including an organic black pigment or an inorganic black pigment such as carbon black.

[0192] In one embodiment, instead of arranging a separate light blocking member LS, at least two color filters CF adjacent to each other may overlap to replace the light blocking member LS. For example, among the first color filter CF1, the second color filter CF2, and the third color filter CF3, at least two color filters CF may be arranged at Fig. 9 and Fig.10 The light blocking member LS is disposed at a position to block transmission of light.

[0193] The color filter CF may include a first color filter CF1 for selectively transmitting light of a first color, a second color filter CF2 for selectively transmitting light of a second color, and a third color filter CF3 for selectively transmitting light of a third color. Each color filter CF may be completely disposed in the first opening OPN1 of the light blocking member LS corresponding to each emission area EA, and each emission area EA may be controlled to emit light of a specific color.

[0194] The first color filter CF1 may be positioned in the first emission area EA1 to be disposed on the light emitting element EL of the first color pixel PX1. For example, the first color filter CF1 may be located in the first opening OPN1 of the light blocking member LS (e.g., the first opening OPN1 of the first group corresponding to the first color pixel PX1). Each first color filter CF1 may overlap the light emitting element EL corresponding thereto.

[0195] The second color filter CF2 may be positioned in the second emission area EA2 to be disposed on the light emitting element EL of the second color pixel PX2. For example, the second color filter CF2 may be located in the first opening OPN1 of the light blocking member LS (e.g., the first opening OPN1 of the second group corresponding to the second color pixel PX2). Each second color filter CF2 may overlap the light emitting element EL corresponding thereto.

[0196] The third color filter CF3 may be positioned in the third emission area EA3 to be disposed on the light emitting element EL of the third color pixel PX3. For example, the third color filter CF3 may be located in the first opening OPN1 of the light blocking member LS (e.g., the first opening OPN1 of the third group corresponding to the third color pixel PX3). Each third color filter CF3 may overlap the light emitting element EL corresponding thereto.

[0197] In one embodiment, the light blocking member LS may be formed to have a height lower than that of the color filters CF, and a portion of each of the color filters CF may be disposed on a portion of the light blocking member LS. Fig. 9 As shown in FIG. 8 , an edge of the first color filter CF1 may be disposed on the light blocking member LS.

[0198] In one embodiment, the light blocking member LS may be formed to have a height higher than that of the color filters CF, and each of the color filters CF may be completely surrounded by the light blocking member LS. Fig.10 As shown in , the first color filter CF1 may be located in the first opening OPN1 of the light blocking member LS and may be surrounded by the light blocking member LS. In one embodiment, after the area where each color filter CF and each optical filter OF are to be formed is separated by forming the light blocking member LS, the color filter CF may be formed by an inkjet printing method or the like.

[0199] The optical filter OF may be positioned in the sensing area SA to be disposed on the photoelectric conversion element PD of the optical sensor PS. For example, the optical filter OF may be located in the second opening OPN2 of the light blocking member LS. Each optical filter OF may overlap with the photoelectric conversion element PD corresponding thereto. In one embodiment, the optical filter OF may be formed to have substantially the same material, structure and / or thickness, but the present disclosure is not limited thereto.

[0200] In one embodiment, the optical filter OF may be disposed on substantially the same layer as the color filter CF above the optical element layer OEL. For example, the color filter CF and the optical filter OF may be located on the encapsulation layer ENL and may be disposed substantially on the same layer. Therefore, even when the optical filter OF is disposed or formed separately from the color filter CF, an increase in the thickness of the display device 1 may be prevented or minimized.

[0201] In one embodiment, the optical filter OF may selectively transmit light of a specific wavelength band and / or color. For example, each optical filter OF may include or may be a metal thin film MTF that transmits light corresponding to a wavelength band of light emitted from at least one emission area EA. For example, the optical filter OF may include a metal thin film MTF that transmits light (e.g., visible light) of some wavelength bands including light emitted from at least one light emitting element EL located in the first emission area EA1, the second emission area EA2, and / or the third emission area EA3. Therefore, a sensing signal may be output from the optical sensor PS using light emitted from at least one emission area EA. For example, each optical filter OF may include a metal thin film MTF that transmits light of a first color emitted from at least the first emission area EA1, and may cause at least one first color pixel PX1 to emit light while performing a sensing mode, and use it as a light source for the optical sensor PS.

[0202] In one embodiment, each optical filter OF may include or may be a metal thin film MTF that absorbs and / or blocks light of a short wavelength lower than a specific wavelength band. For example, the metal thin film MTF may transmit light (e.g., visible light) of some wavelength bands including light emitted from the light emitting element EL, and may absorb and / or block short wavelength light of a short wavelength lower than a specific wavelength band (e.g., short wavelength external light belonging to a wavelength band of 300 nm or less or a wavelength band of 350 nm or less).

[0203] In one embodiment, the optical filter OF may be a thin film having a thickness smaller than that of the color filter CF disposed on the light emitting element EL. For example, the optical filter OF may include a metal film MTF having a thickness of 10 nm or less. In one embodiment, the metal film MTF may include at least one metal selected from copper (Cu), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), vanadium (V) and aluminum (Al), an alloy thereof, or other metals. The material and thickness of the optical filter OF may be appropriately set in consideration of the transmittance (or light absorptivity) of the material and thickness of the metal film MTF constituting the optical filter OF. For example, the metal film MTF may have a material and thickness selected according to the wavelength band of light to be transmitted or blocked using the metal film MTF and the transmittance (or absorptivity) for the target wavelength band of light. In one embodiment, the metal film MTF may be formed by a deposition (e.g., thermal deposition) process, but the method for forming the metal film MTF is not limited thereto.

[0204] In one embodiment, each optical filter OF can be completely disposed in each second opening OPN2. For example, each optical filter OF can be completely disposed on the light receiving portion of the photoelectric conversion element PD corresponding to each sensing area SA to completely cover the light receiving portion. Therefore, the degradation of the photoelectric conversion element PD due to external light (e.g., sunlight) can be effectively reduced, mitigated and / or improved.

[0205] In one embodiment, each optical filter OF may have a thickness smaller than that of the color filter CF provided in each emission area EA. Therefore, the amount (or proportion) of light absorbed by the optical filter OF in incident light (e.g., light belonging to the visible light wavelength band) for fingerprint sensing, etc. is reduced or minimized, which makes it possible to sufficiently ensure the amount of light received by the photoelectric conversion element PD. Therefore, the sensitivity of the optical sensor PS can be increased.

[0206] The first outer coating OC1 may be a capping layer for protecting the color filter CF and the optical filter OF, and may include an inorganic layer. For example, the first outer coating OC1 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, or the like.

[0207] The window WDL may be disposed on the optical filter layer OFL. The window WDL may be formed of, for example, a glass substrate, a plastic substrate, or a protective film, and the material thereof is not limited thereto.

[0208] Figures 11 to 13 is a graph showing light transmittance or light absorption rate according to the material and thickness of the optical filter OF. For example, Figures 11 to 13The light transmittance or light absorption rate according to the material and / or thickness of the metal thin film MTF in an embodiment where the optical filter OF is a metal thin film MTF is shown.

[0209] Apart from Figures 1 to 10 In addition, reference Fig.11 , a metal film MTF made of copper (Cu) with a thickness of 6 nm, a metal film MTF made of gold (Au) with a thickness of 2 nm, and a metal film MTF made of silver (Ag) with a thickness of 2 nm can show different transmittances for incident light, and can have different peak wavelengths with the highest transmittances. Therefore, considering the wavelength band (or peak wavelength) and / or type (e.g., green light, red light, and / or blue light) of the incident light to be transmitted through the metal film MTF and incident on the photoelectric conversion element PD and the wavelength band of the light to be blocked (e.g., a wavelength band of 350 nm or less (e.g., approximately 300 nm)), the metal film MTF can be manufactured to have a material and thickness that meet the target transmittance of the light to be incident and the target absorptivity (or blocking rate) of the light to be blocked.

[0210] For example, when it is desired to generate a sensing signal in the optical sensor PS using light of a first color (e.g., green light) having a peak wavelength in the range of 510nm to 550nm, the optical filter OF may be formed by a metal thin film MTF manufactured using gold (Au) to have a thickness of 2nm. When it is desired to generate a sensing signal in the optical sensor PS using light of a second color (e.g., red light) having a peak wavelength in the range of 610nm to 650nm, the optical filter OF may be formed by a metal thin film MTF manufactured using copper (Cu) to have a thickness of 6nm. When it is desired to generate a sensing signal in the optical sensor PS using light of a third color (e.g., blue light) having a peak wavelength in the range of 440nm to 480nm, the optical filter OF may be formed by a metal thin film MTF manufactured using silver (Ag) to have a thickness of 2nm.

[0211] Apart from Figures 1 to 11 In addition, reference Fig.12 Even if the metal film MTF is made of the same material, the metal film MTF may show different light absorption characteristics according to its thickness. For example, a metal film MTF made of gold (Au) with a thickness of 0.5nm, 1nm, 2nm, and 4nm may show different light absorption rates (or light blocking rates corresponding thereto).

[0212] Therefore, when selecting the material of the metal film MTF, the thickness of the metal film MTF can be appropriately adjusted or selected in consideration of the wavelength band (or peak wavelength) and / or type of light to be transmitted through the metal film MTF and incident on the photoelectric conversion element PD and the wavelength band of light to be blocked. In one embodiment, the material and thickness of the metal film MTF can be selected in consideration of the transmittance and / or absorptivity for each wavelength band within a thickness range of 10 nm or less. For example, in the case of forming the metal film MTF using gold (Au), in order to prevent or minimize the loss of incident light to be used to generate a sensing signal, the metal film MTF can be formed to have a thickness of 2 nm or less, so that the light absorptivity in a wavelength band of 350 nm or more (e.g., a visible light wavelength band) can be reduced or minimized.

[0213] Apart from Figures 1 to 12 In addition, reference Fig.13 Even when the metal thin film MTF is formed to have the same thickness, the metal thin film MTF may show different light absorption characteristics according to its material. For example, a metal thin film MTF made of aluminum (Al) with a thickness of 5 nm and a metal thin film MTF made of tin (Sn) with a thickness of 5 nm may show different light absorption rates (or light blocking rates corresponding thereto).

[0214] Therefore, when selecting the thickness of the metal thin film MTF, taking into account the wavelength band (or peak wavelength) and / or type of light to be transmitted through the metal thin film MTF and incident on the photoelectric conversion element PD and the wavelength band of light to be blocked, an appropriate material can be selected among the materials that can be used for the metal thin film MTF. For example, in the case of forming a metal thin film MTF having a thickness of approximately 5 nm, in order to prevent or minimize the loss of incident light to be used to generate a sensing signal, aluminum (Al) can be used instead of tin (Sn) to form the metal thin film MTF.

[0215] As described above, the transmittance and absorptance of the metal thin film MTF may vary depending on the material and thickness of the metal thin film MTF. In addition, the wavelength band (or peak wavelength) of light transmitted through the metal thin film MTF and the wavelength band (or peak wavelength) of light absorbed and / or blocked by the metal thin film MTF may vary depending on the material and thickness of the metal thin film MTF. Therefore, the metal thin film MTF may have a material and thickness selected to satisfy the wavelength band of light to be transmitted by the metal thin film MTF and its target transmittance and the wavelength band of light to be absorbed and / or blocked by the metal thin film MTF and its target absorptance (or blocking rate).

[0216] Fig.14 It is shown along Figure 6 and Figure 82 is a cross-sectional view of an example of a cross section of the display device 1 taken along line II′. Fig.15 It is shown along Figure 7 and Figure 8 1 is a cross-sectional view of an example of a cross section of the display device 1 taken along line II-II'. For example, Fig.14 and Fig.15 The optical filter layer OFL provided in the active area AA of the display device 1 is shown. Fig. 9 and Fig.10 A cross section of a modified embodiment of an embodiment.

[0217] Apart from Figures 1 to 10 In addition, reference Fig.14 and Fig.15 , the optical filter OF disposed in each sensing area SA may include a color filter material of a specific color. For example, each optical filter OF may include a color filter (hereinafter, referred to as "fourth color filter CF4") for selectively transmitting light of a specific color or a wavelength band corresponding thereto, or may be a fourth color filter CF4.

[0218] In one embodiment, the fourth color filter CF4 may be a color filter of the same type and / or color as at least one of the color filters CF disposed in the emission area EA. For example, when it is desired to generate a sensing signal using light of a first color (e.g., green light) emitted from the first emission area EA1 of the first color pixel PX1, the fourth color filter CF4 may be a first color filter CF1 (e.g., a green filter) for selectively transmitting light of the first color. In one embodiment, the fourth color filter CF4 may be formed simultaneously with at least one of the color filters CF disposed in the emission area EA (e.g., the first color filter CF1).

[0219] In one embodiment, the fourth color filter CF4 may have a thickness smaller than that of the color filters CF (e.g., the first color filter CF1, the second color filter CF2, and the third color filter CF3) disposed in each of the emission areas EA. Thus, light of a specific wavelength band (e.g., a wavelength band of 300 nm or less or a wavelength band of 350 nm or less) may be effectively absorbed and / or blocked while reducing or minimizing the loss of incident light to be used to generate a sensing signal.

[0220] In one embodiment, the fourth color filter CF4 may be completely disposed on the light receiving portion of the photoelectric conversion element PD. For example, the fourth color filter CF4 may be completely disposed in the second opening OPN2. Therefore, the degradation of the photoelectric conversion element PD caused by external light or the like may be effectively reduced, mitigated and / or improved.

[0221] As described above, the display device 1 according to the embodiment includes the photoelectric conversion element PD and the optical filter OF provided on the photoelectric conversion element PD. The optical filter OF, which is used to transmit light (e.g., visible light) of some wavelength bands including the light emitted from the light emitting element EL and absorb and / or block short-wavelength light of a specific wavelength band or less (e.g., short-wavelength external light belonging to a wavelength band of 300 nm or less or 350 nm or less), may be, for example, a metal thin film or a color filter. The optical filter OF may be a thin film having a thickness smaller than that of the color filter CF provided on the light emitting element EL, and thus may have a higher light transmittance with respect to visible light.

[0222] According to an embodiment, while ensuring a sufficient amount of light received by the photoelectric conversion element PD, degradation of the photoelectric conversion element PD due to external light, etc. can be reduced, mitigated and / or improved. Therefore, the reliability of the photoelectric conversion element PD and the optical sensor PS including the same can be improved.

[0223] At the end of the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the embodiments without departing substantially from the principles of the inventive concept. Therefore, the embodiments of the inventive concept disclosed are intended only for general and descriptive purposes and not for limiting purposes.

Claims

1. A display device, defining an active area including an emission area and a sensing area, and comprising: an optical element layer, comprising a light emitting element located in the emission region and a photoelectric conversion element located in the sensing region; a light blocking member disposed on the optical element layer and including a first opening disposed in a region corresponding to the emission region and a second opening disposed in a region corresponding to the sensing region; a color filter located in the first opening and overlapping the light emitting element; as well as an optical filter located in the second opening and overlapping the photoelectric conversion element, The optical filter is completely disposed in the second opening and has a thickness smaller than that of the color filter.

2. The display device according to claim 1, wherein: The optical filter includes a metal thin film that transmits light corresponding to a wavelength band of light emitted from the emission region.

3. The display device according to claim 2, wherein: The metal thin film has a thickness of 10 nm or less.

4. The display device according to claim 2, wherein: The metal thin film includes at least one metal selected from the group consisting of copper, gold, silver, nickel, titanium, vanadium, and aluminum.

5. The display device according to claim 1, further comprising a pixel including the light emitting element and emitting light of the first color in the emission area, in, The color filter is a color filter of the first color that selectively transmits the light of the first color, and Wherein, the optical filter includes a color filter of the first color that selectively transmits the light of the first color.

6. The display device according to claim 5, wherein: The pixel emits green light, and Wherein, the color filter and the optical filter are green color filters.

7. The display device according to claim 5, wherein: The active area includes a pixel column in which the pixel emitting the light of the first color and another pixel are arranged, and The sensing area is arranged between the emission area of ​​the pixel and the emission area of ​​the other pixel.

8. The display device according to claim 1, wherein: The color filter and the optical filter are disposed on the same layer above the optical element layer.

9. The display device according to claim 1, further comprising: a panel circuit layer, disposed below the optical element layer and comprising a pixel transistor connected to the light emitting element and a sensor transistor connected to the photoelectric conversion element; as well as The substrate is arranged below the panel circuit layer.

10. The display device according to claim 9, wherein: The light emitting element and the photoelectric conversion element are provided on the same layer over the substrate.

Images