An ultrasonic imaging device and driving method, an ultrasonic imaging equipment

Abstract

This invention discloses an ultrasonic imaging device and its driving method, as well as an ultrasonic imaging apparatus. The ultrasonic imaging device includes a substrate, a driving circuit layer, and an ultrasonic transducer unit. The driving circuit layer is located on one side of the substrate. The ultrasonic transducer unit is located on the side of the driving circuit layer opposite to the substrate and is electrically connected to the driving circuit layer. The ultrasonic transducer unit includes a transmitting electrode, a piezoelectric layer, and a receiving electrode stacked together. The transmitting electrode includes multiple first annular patterns, any two of which are coaxially arranged, and adjacent first annular patterns are spaced apart. This can improve the focusing effect of ultrasonic waves and enhance the ultrasonic signal intensity.

Description

Technical Field

[0001] This invention relates to the field of ultrasound imaging technology, and in particular to an ultrasound imaging device and driving method, and an ultrasound imaging equipment. Background Technology

[0002] Ultrasonic imaging technology is a technique that uses ultrasound (sound waves with a frequency higher than 20kHz) to create images. It is widely used in many fields such as medical diagnosis, industrial inspection, and fingerprint recognition.

[0003] Currently, ultrasound imaging technology utilizes piezoelectric ultrasound imaging devices for the transmission and reception of ultrasonic waves. In traditional piezoelectric ultrasound imaging devices, the ultrasonic transducer unit is a stacked structure of a bottom electrode, a piezoelectric layer, and a top electrode. This results in relatively low intensity of ultrasonic wave transmission and reception, affecting image quality. Summary of the Invention

[0004] This invention provides an ultrasonic imaging device and driving method, and an ultrasonic imaging equipment, to improve the emission intensity of ultrasonic waves and improve imaging quality.

[0005] A first aspect of the present invention provides an ultrasound imaging device, comprising:

[0006] Substrate;

[0007] The driving circuit layer is located on one side of the substrate;

[0008] An ultrasonic transducer is located on the side of the drive circuit layer away from the substrate and is electrically connected to the drive circuit layer; the ultrasonic transducer includes a transmitting electrode, a piezoelectric layer and a receiving electrode stacked together.

[0009] The emitting electrode includes multiple first annular patterns, any two of which are coaxially arranged and adjacent first annular patterns are spaced apart.

[0010] In some embodiments, for the same transmitting electrode, multiple first annular patterns are each connected to a transmitting signal line, and the transmitting signal line is configured to provide transmitting signals to the multiple first annular patterns sequentially from the outside to the inside according to a timing sequence.

[0011] In some embodiments, for the same emitting electrode, the shape of the first annular pattern located in the innermost layer is set to a solid shape.

[0012] In some embodiments, the receiving electrode includes a plurality of second annular patterns, any two of the plurality of second annular patterns are coaxially arranged, and adjacent two second annular patterns are spaced apart.

[0013] The second annular pattern corresponds one-to-one with the first annular pattern, and the orthographic projection of the second annular pattern on the substrate at least partially overlaps with the orthographic projection of the corresponding first annular pattern on the substrate.

[0014] In some embodiments, the driving circuit layer includes a first thin-film transistor; the first thin-film transistor corresponds one-to-one with the receiving electrode;

[0015] For the same receiving electrode, multiple second ring patterns are electrically connected to the first thin-film transistor corresponding to that receiving electrode;

[0016] The second annular pattern is electrically connected to the source of the first thin-film transistor;

[0017] Alternatively, the second annular pattern is electrically connected to the gate of the first thin-film transistor.

[0018] In some embodiments, the receiving electrode is located between the piezoelectric layer and the driving circuit layer; the transmitting electrode is located on the side of the piezoelectric layer away from the driving circuit layer.

[0019] In some embodiments, the ultrasound imaging device further includes a first insulating layer; the first insulating layer is located between the receiving electrode and the piezoelectric layer;

[0020] The emitting electrode is in direct contact with the piezoelectric layer.

[0021] In some embodiments, the piezoelectric layer includes a plurality of third annular patterns, any two of the plurality of third annular patterns are coaxially arranged, and adjacent third annular patterns are spaced apart.

[0022] The third annular pattern corresponds one-to-one with the first annular pattern, and the orthographic projection of the third annular pattern on the substrate at least partially overlaps with the orthographic projection of the corresponding first annular pattern on the substrate.

[0023] In some embodiments, the ultrasonic imaging device further includes a second insulating layer; the second insulating layer is located between the ultrasonic transducer unit and the drive circuit layer;

[0024] The second insulating layer has multiple cavities; the cavities correspond to the first annular pattern, and the orthographic projection of the cavity on the substrate is located within the orthographic projection of the corresponding first annular pattern on the substrate.

[0025] In some embodiments, for a single emitting electrode, the number of first annular patterns is greater than or equal to 3.

[0026] A second aspect of the present invention provides a driving method applied to an ultrasound imaging device according to any one of the above claims, the driving method comprising:

[0027] For the same transmitting electrode, transmitting signals are sequentially provided to multiple first annular patterns from the outside to the inside according to the timing sequence.

[0028] A third aspect of the present invention provides an ultrasound imaging device, comprising the ultrasound imaging device of any of the above claims.

[0029] The beneficial effects of this invention are as follows:

[0030] This invention provides an ultrasonic imaging device and driving method, as well as an ultrasonic imaging apparatus. The ultrasonic imaging device includes a substrate, a driving circuit layer, and an ultrasonic transducer unit. The driving circuit layer is located on one side of the substrate. The ultrasonic transducer unit is located on the side of the driving circuit layer opposite to the substrate and is electrically connected to the driving circuit layer. The ultrasonic transducer unit includes a transmitting electrode, a piezoelectric layer, and a receiving electrode stacked together. The transmitting electrode includes multiple first annular patterns, any two of which are coaxially arranged, and adjacent first annular patterns are spaced apart. By sequentially providing transmission signals to the first annular patterns from the outside in, the piezoelectric layer is driven to vibrate and emit ultrasonic waves sequentially from the outside in, thereby improving the focusing effect of the ultrasonic waves and enhancing the ultrasonic signal intensity. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is one of the schematic diagrams of the cross-sectional structure of the ultrasound imaging device provided in the embodiments of the present invention;

[0033] Figure 2 This is one of the top view schematic diagrams of the transmitting electrode structure provided in an embodiment of the present invention;

[0034] Figure 3 This is a second top view schematic diagram of the transmitting electrode structure provided in an embodiment of the present invention;

[0035] Figure 4 This is a second schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention;

[0036] Figure 5 This is the third top view schematic diagram of the transmitting electrode structure provided in the embodiment of the present invention;

[0037] Figure 6 This is a timing diagram of the transmission signal provided in an embodiment of the present invention;

[0038] Figure 7 This is the fourth top view schematic diagram of the transmitting electrode structure provided in the embodiment of the present invention;

[0039] Figure 8 This is the third schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiments of the present invention;

[0040] Figure 9This is the fourth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiments of the present invention;

[0041] Figure 10 Fifth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiments of the present invention;

[0042] Figure 11 One of the top view structural schematic diagrams of a single first annular pattern provided in an embodiment of the present invention;

[0043] Figure 12 This is a second top view of a single first annular pattern provided in an embodiment of the present invention. Detailed Implementation

[0044] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. However, the exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the figures denote the same or similar structures, and therefore repeated descriptions of them will be omitted. Terms describing position and direction in the present invention are illustrative based on the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of the present invention. The accompanying drawings of the present invention are for illustrative purposes only and do not represent actual proportions.

[0045] Ultrasonic imaging technology uses ultrasound (sound waves with a frequency higher than 20kHz) to create images and is widely used in many fields such as medical diagnosis, industrial inspection, and fingerprint recognition.

[0046] Currently, ultrasound imaging technology utilizes piezoelectric ultrasound imaging devices for the transmission and reception of ultrasonic waves. In traditional piezoelectric ultrasound imaging devices, the ultrasonic transducer unit is a stacked structure of a bottom electrode, a piezoelectric layer, and a top electrode. This results in relatively low intensity of ultrasonic wave transmission and reception, affecting image quality.

[0047] Figure 1 This is one of the schematic diagrams of the cross-sectional structure of the ultrasound imaging device provided in the embodiments of the present invention; Figure 2 This is one of the top view schematic diagrams of the transmitting electrode structure provided in an embodiment of the present invention.

[0048] In embodiments of the present invention, such as Figure 1As shown, the ultrasonic imaging device includes a substrate 100, a drive circuit layer 200, and an ultrasonic transducer unit 300. The substrate 100 is located at the bottom of the ultrasonic imaging device and mainly serves as a support and load-bearing element. The drive circuit layer 200 is located on one side of the substrate 100, and the ultrasonic transducer unit 300 is located on the side of the drive circuit layer 200 opposite to the substrate 100. The ultrasonic transducer unit 300 is electrically connected to the drive circuit layer 200. The drive circuit layer 200 is provided with drive lines, which are used to provide electrical signals to the ultrasonic transducer unit 300 during the ultrasonic wave emission phase, driving the ultrasonic transducer unit 300 to vibrate and emit ultrasonic waves, and / or to receive the electrical signals converted from the ultrasonic waves by the ultrasonic transducer unit 300 during the ultrasonic wave reception phase.

[0049] The ultrasonic transducer unit 300 includes a transmitting electrode 310, a piezoelectric layer 320, and a receiving electrode 330 stacked together. In specific implementations, the transmitting electrode 310 can be disposed between the piezoelectric layer 320 and the driving circuit layer 200, and the receiving electrode 330 can be disposed on the side of the piezoelectric layer 200 away from the driving circuit layer 200; alternatively, the receiving electrode 330 can be disposed between the piezoelectric layer 320 and the driving circuit layer 200, and the transmitting electrode 310 can be disposed on the side of the piezoelectric layer 200 away from the driving circuit layer 200. No limitation is made here. The transmitting electrode 310 and the receiving electrode 330 can be made of materials with excellent electrical conductivity, such as metals and their alloys. No limitation is made here. The piezoelectric layer 320 can be made of piezoelectric materials, such as polyvinylidene fluoride (PVDF) and other organic piezoelectric materials. No limitation is made here. During the ultrasonic wave emission phase, an electric field is applied to the piezoelectric layer 320 through the transmitting electrode 310 and the receiving electrode 330, causing the piezoelectric layer 320 to vibrate at high frequency under the inverse piezoelectric effect, thereby emitting ultrasonic waves. During the ultrasonic wave reception phase, the piezoelectric layer 320 can receive ultrasonic waves and convert them into electrical signals under the direct piezoelectric effect.

[0050] In this embodiment of the invention, combined with Figure 1 and Figure 2 As shown, where Figure 1 It can be regarded as Figure 2 In the cross-sectional view along section line AA, the emitting electrode 310 includes a plurality of first annular patterns 311. Any two of the plurality of first annular patterns 311 are coaxially arranged, and adjacent first annular patterns 311 are spaced apart.

[0051] By dividing the emitting electrode 310 into multiple spaced-apart first annular patterns 311, during the ultrasonic emission phase, an emission signal can be applied to any one of the first annular patterns 311 individually, thereby driving the piezoelectric layer 320 in the corresponding region of that first annular pattern 311 to vibrate. For example... Figure 2As shown, the emitting electrode 310 can be divided into three first annular patterns 311, namely the outermost first annular pattern 3111, the middle first annular pattern 3112, and the innermost first annular pattern 3113. During the ultrasonic wave emission phase, a transmission signal can first be applied to the outermost first annular pattern 3111 alone, thereby creating an electric field between the outermost first annular pattern 3111 and the receiving electrode 330, driving the piezoelectric layer 320 in the area covered by the outermost first annular pattern 3111 to vibrate and emit ultrasonic waves. Then, a transmission signal can be applied to the middle first annular pattern 3112 alone, thereby creating an electric field between the middle first annular pattern 3112 and the receiving electrode 330, driving the piezoelectric layer 320 in the area covered by the middle first annular pattern 3112 to vibrate and emit ultrasonic waves. Finally, a transmission signal can be applied to the innermost first annular pattern 3113 alone, thereby creating an electric field between the innermost first annular pattern 3113 and the receiving electrode 330, driving the piezoelectric layer 320 in the area covered by the innermost first annular pattern 3113 to vibrate and emit ultrasonic waves. By providing transmission signals to the first annular pattern 3112 sequentially from the outside in, driving the piezoelectric layer 320 to vibrate and emit ultrasonic waves sequentially from the outside in, the focusing effect of the ultrasonic waves can be improved, and the ultrasonic signal strength enhanced.

[0052] In embodiments of the present invention, such as Figure 2 As shown, the first annular pattern 311 can be configured as a circular ring shape, thereby improving the focusing effect of the ultrasound. In some embodiments, the first annular pattern 311 can also be configured as other annular shapes. Figure 3 This is a second top-view schematic diagram of the transmitting electrode structure provided in an embodiment of the present invention. Figure 3 As shown, for example, the first annular pattern 311 can also be set as a square ring, a rhombus ring or an elliptical ring or other annular shapes, which are not limited here.

[0053] In this embodiment of the invention, the ultrasonic imaging device may include at least one ultrasonic transducer unit 300. Figure 4 This is a second schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention. Figure 4 As shown, the ultrasound imaging device may include multiple ultrasound transducer units 300. The multiple ultrasound transducer units 300 may be arranged in an array, which is not limited here. It should be noted that in the accompanying drawings of this embodiment, the structure of the ultrasound imaging device is illustrated using one ultrasound transducer unit 300 as an example.

[0054] Figure 5 This is the third top view schematic diagram of the transmitting electrode structure provided in the embodiment of the present invention; Figure 6 The timing diagram of the transmission signal provided in the embodiment of the present invention.

[0055] In embodiments of the present invention, such as Figure 5As shown, for the same transmitting electrode, multiple first annular patterns 311 are each connected to a transmitting signal line L. The transmitting signal line L is configured to sequentially provide transmitting signals to the multiple first annular patterns 3111 from the outside in according to a timing sequence. For example, as... Figure 5 As shown, the outermost first annular pattern 3111 is connected to the first transmission signal line L1, the middle first annular pattern 3112 is connected to the second transmission signal line L2, and the innermost first annular pattern 3113 is connected to the third transmission signal line L3. During the ultrasonic wave transmission phase, as... Figure 6 As shown, at times t0 to t1, a transmission signal is provided to the outermost first annular pattern 3111 through the first transmission signal line L1; at times t1 to t2, a transmission signal is provided to the middle layer first annular pattern 3112 through the second transmission signal line L2; and at times t2 to t3, a transmission signal is provided to the outermost first annular pattern 3113 through the third transmission signal line L3.

[0056] Figure 7 The fourth schematic diagram of the top view of the transmitting electrode provided in the embodiment of the present invention.

[0057] In some embodiments, for the same emitting electrode, the shape of the innermost first annular pattern is set to a solid shape. For example, such as Figure 7 As shown, the innermost first annular pattern 3113 can be set to a solid shape, for example, the innermost first annular pattern 3113 can be set to a solid circle or other shapes, which is not limited here.

[0058] Figure 8 This is the third schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiments of the present invention; Figure 9 The fourth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiment of the present invention.

[0059] In some embodiments, such as Figure 8 and Figure 9As shown, the receiving electrode 330 includes a plurality of second annular patterns 331. Any two of the plurality of second annular patterns 331 are coaxially arranged, and adjacent second annular patterns 331 are spaced apart. Each second annular pattern 331 corresponds one-to-one with a first annular pattern 311, and the orthographic projection of the second annular pattern 331 onto the substrate 100 at least partially overlaps with the orthographic projection of the corresponding first annular pattern 311 onto the substrate 100. By dividing the receiving electrode 330 into a plurality of second annular patterns 331 corresponding to the first annular pattern 311, the isolation between adjacent second annular patterns 331 is increased, the mutual influence between adjacent second annular patterns 331 during the vibration of the piezoelectric layer 320 is reduced, and the ultrasonic focusing effect is further improved. In specific implementations, the orthographic projection of the second annular pattern 331 onto the substrate 100 can be set to completely overlap with the orthographic projection of the corresponding first annular pattern 311 onto the substrate 100; this is not limited here.

[0060] In embodiments of the present invention, such as Figure 1 , Figure 8 and Figure 9 As shown, the driving circuit layer 200 includes a first thin-film transistor T1. Each first thin-film transistor T1 corresponds to a receiving electrode 330, and the receiving electrode 330 is electrically connected to its corresponding first thin-film transistor T1. In a specific implementation, the driving circuit layer 200 includes a signal reading circuit. The first thin-film transistor T1 can be the input module of the signal reading circuit. The signal reading circuit is electrically connected to the receiving electrode 330 of the ultrasonic transducer unit through the first thin-film transistor T1, thereby reading the electrical signal converted from ultrasonic waves during the ultrasonic wave reception stage. In a specific implementation, such as... Figure 8 and Figure 9 As shown, for the same receiving electrode 330, multiple second annular patterns 331 are electrically connected to the first thin-film transistor T1 corresponding to the receiving electrode 330.

[0061] In some embodiments, such as Figure 8 As shown, the second annular pattern 331 is electrically connected to the source S of the first thin-film transistor T1, thereby forming a passive (PPS) signal readout circuit. In the passive signal readout circuit, the gate G of the first thin-film transistor T1 is controlled by a separate scan signal line. When the first thin-film transistor T1 is turned on, the signal readout circuit can directly read the electrical signal input by the receiving electrode 330.

[0062] In some embodiments, such as Figure 9As shown, the second annular pattern 331 is electrically connected to the gate G of the first thin-film transistor T1, thereby forming an active signal readout (APS) circuit. In the active signal readout circuit, the electrical signal input to the receiving electrode 330 serves as the switching signal of the first thin-film transistor T1. Thus, the switching state of the first thin-film transistor T1 and the magnitude of the signal transmitted by the first thin-film transistor T1 can be controlled by the electrical signal input to the receiving electrode 330, thereby amplifying the signal.

[0063] In some embodiments, such as Figure 8 and Figure 9 As shown, the receiving electrode 330 is located between the piezoelectric layer 320 and the driving circuit layer 200, and the transmitting electrode 310 is located on the side of the piezoelectric layer 320 away from the driving circuit layer 200. Placing the receiving electrode 330 close to the driving circuit layer 200 facilitates the connection between the receiving electrode 330 and the first thin-film transistor T1 during the fabrication process.

[0064] In some embodiments, such as Figure 8 and Figure 9 As shown, the ultrasonic imaging device also includes a first insulating layer 400. The first insulating layer 400 is located between the receiving electrode 330 and the piezoelectric layer 320. By adjusting the thickness of the first insulating layer 400, the working performance of the ultrasonic transducer can be improved. The first insulating layer 400 can be made of dielectric materials such as silicon oxide, silicon nitride, and silicon oxynitride, and is not limited here. The transmitting electrode 310 can be directly contacted with the piezoelectric layer 320, and is not limited here.

[0065] In some embodiments, such as Figure 8 and Figure 9 As shown, the piezoelectric layer 320 includes a plurality of third annular patterns 321. Any two of the plurality of third annular patterns 321 are coaxially arranged, and adjacent third annular patterns 321 are spaced apart. Each third annular pattern 321 corresponds one-to-one with a first annular pattern 311, and the orthographic projection of the third annular pattern 321 onto the substrate 100 at least partially overlaps with the orthographic projection of the corresponding first annular pattern 311 onto the substrate 100. By dividing the piezoelectric layer 320 into a plurality of third annular patterns 321 corresponding to the first annular pattern 311, the isolation between adjacent third annular patterns 321 is increased, the influence of the vibration of a third annular pattern 321 on adjacent third annular patterns 321 is reduced, and the ultrasonic focusing effect is further improved. In specific implementations, the orthographic projection of the third annular pattern 321 onto the substrate 100 can be set to completely overlap with the orthographic projection of the corresponding first annular pattern 311 onto the substrate 100; this is not limited here.

[0066] Figure 10 Fifth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in the embodiments of the present invention; Figure 11One of the top view structural schematic diagrams of a single first annular pattern provided in an embodiment of the present invention; Figure 12 This is a second top view of a single first annular pattern provided in an embodiment of the present invention.

[0067] In some embodiments, such as Figure 10 As shown, the ultrasonic imaging device also includes a second insulating layer 500. The second insulating layer 500 is located between the ultrasonic transducer unit and the drive circuit layer 100. Specifically, the second insulating layer 500 is located between the receiving electrode 330 and the substrate 100. The second insulating layer 500 has multiple cavities C. The cavities C correspond to the first annular pattern 311, and the orthographic projection of the cavity C on the substrate 100 lies within the orthographic projection of the corresponding first annular pattern 311 on the substrate 100. By setting the cavities C, the vibration intensity of the ultrasonic transducer unit can be further improved, thereby improving the emission intensity and receiving performance of the ultrasonic transducer. In specific implementations, the second insulating layer 500 can be made of organic materials such as resin. Organic materials usually have a certain degree of elasticity, which is beneficial for enhancing vibration performance.

[0068] In some embodiments, such as Figure 11 As shown, the shape of the orthographic projection of the cavity C onto the substrate 100 can be set to be annular. In a specific implementation, an annular cavity C can be set below a first annular pattern 311.

[0069] In some embodiments, such as Figure 12 As shown, the orthogonal projection of cavity C onto substrate 100 can be configured as a fan-shaped ring, where one of the fan-shaped rings can be considered part of a ring. In specific implementations, multiple fan-shaped cavities C can be correspondingly arranged below a first annular pattern 311, with the multiple fan-shaped cavities C evenly distributed along the circumferential direction. No further limitations are imposed here.

[0070] In some embodiments, for a single transmitting electrode 310, the number of first annular patterns 311 can be greater than or equal to 3, for example, 3, 4, 5, 6, etc., without limitation. In some embodiments, for a single transmitting electrode 310, the number of first annular patterns 311 can also be controlled to be less than or equal to a set number, for example, less than or equal to 8, or less than or equal to 10, thereby reducing manufacturing difficulty and ensuring that the ultrasonic transducer has sufficient vibration intensity. In specific implementations, the number of first annular patterns 311 for a single transmitting electrode 310 can be set according to actual conditions, without limitation.

[0071] In some embodiments, such as Figure 10 As shown, the driving circuit layer 200 may specifically include the following film layer structures:

[0072] The buffer layer 201 is located between the substrate 100 and the ultrasonic transducer unit. In specific implementations, the buffer layer 201 can be configured as a structure consisting of multiple buffer layers and multiple barrier layers stacked together, which is not limited here.

[0073] Semiconductor layer 202 is located on the side of buffer layer 201 facing away from substrate 100. Semiconductor layer 202 includes the active layer of the first thin-film transistor. Semiconductor layer 202 may include at least one of semiconductor materials such as oxide semiconductor and low-temperature polysilicon (LTPS) semiconductor, thereby forming an oxide-thin film transistor (Oxide-TFT) and / or a low-temperature polysilicon-thin film transistor (LTPS-TFT), which is not limited herein.

[0074] The gate insulating layer 203 is located on the side of the semiconductor layer 202 facing away from the substrate 100. The gate insulating layer (GI) is made of insulating material and serves to provide insulation, control the threshold voltage, and reduce leakage current.

[0075] A gate metal layer 204 is located on the side of the gate insulating layer 203 facing away from the substrate 100. The gate metal layer 204 includes the gate of the first thin-film transistor.

[0076] The interlayer dielectric layer 205 is located on the side of the gate metal layer 204 facing away from the substrate 100. The interlayer dielectric layer (ILD) can serve functions such as insulation, planarization, and reduction of parasitic capacitance.

[0077] The first source / drain metal layer 206 is located on the side of the interlayer dielectric layer 205 facing away from the substrate 100. The first source / drain metal layer 206 includes the source and drain of the first thin-film transistor.

[0078] Planarization layer 207 is located on the side of the first source / drain metal layer 206 that faces away from the substrate 100. Planarization layer 207 can perform functions such as planarization.

[0079] The second source / drain metal layer 208 is located on the side of the planarization layer 207 facing away from the substrate 100. The ultrasonic transducer unit can be electrically connected to the first thin-film transistor through the second source / drain metal layer 208. The second source / drain metal layer 208 can also be used to set the traces of other signal lines, which will not be described in detail here.

[0080] The third insulating layer 209 is located on the side of the second source / drain metal layer 208 that faces away from the planarization layer 207. The third insulating layer 209 may be made of the same or similar material as the first insulating layer 400, and there is no limitation on this.

[0081] In specific implementations, in addition to the above-mentioned film layers, the driving circuit layer 200 may also include other film layers. Alternatively, the driving circuit layer 200 may reduce one or more of the above film layers, which is not limited here.

[0082] In some embodiments, such as Figure 10 As shown, the ultrasonic imaging device also includes an impedance matching layer 600. The impedance matching layer 600 is located on the side of the ultrasonic transducer unit facing away from the substrate 100. The impedance matching layer 600 is used to reduce reflection between the ultrasonic imaging device and the surface of the object to be detected, thereby improving signal transmission efficiency and transducer performance. The material of the impedance matching layer 600 can be selected according to the material of the object to be detected, and is not limited here.

[0083] In practice, the ultrasound imaging device may also include other structures necessary to achieve specific functions. The components of the ultrasound imaging device can be adjusted according to actual needs, which will not be elaborated here.

[0084] The present invention also provides a driving method applied to the ultrasound imaging device provided in any of the foregoing embodiments. The method includes: for the same transmitting electrode, sequentially providing transmitting signals to multiple first annular patterns from the outside in according to a timing sequence. For specific implementation details, please refer to the specific descriptions of the relevant parts in the foregoing ultrasound imaging device embodiments; these will not be repeated here.

[0085] The present invention also provides an ultrasound imaging device, including the ultrasound imaging device provided in any of the foregoing embodiments. Specifically, the ultrasound imaging device may be a medical diagnostic device, an industrial testing device, a fingerprint recognition device, etc., and is not limited thereto. In specific implementation, the ultrasound imaging device provided in the embodiments of the present invention has the same or similar technical effects as the ultrasound imaging device provided in any of the foregoing embodiments, and will not be described in detail here.

[0086] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0087] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. An ultrasonic imaging device, characterized by The ultrasonic imaging device comprises: a substrate; a driving circuit layer located on one side of the substrate; an ultrasonic transducing unit located on the side of the driving circuit layer away from the substrate and electrically connected with the driving circuit layer; the ultrasonic transducing unit comprises a transmitting electrode, a piezoelectric layer and a receiving electrode arranged in a stack; a second insulating layer located between the ultrasonic transducing unit and the driving circuit layer; wherein the transmitting electrode comprises a plurality of first annular patterns, any two of the plurality of first annular patterns are coaxially arranged, and adjacent two of the first annular patterns are arranged at intervals, for the same transmitting electrode, the plurality of first annular patterns are respectively connected to a transmitting signal line, and the transmitting signal line is configured to sequentially provide the plurality of first annular patterns with transmitting signals from outside to inside in time sequence; the piezoelectric layer comprises a plurality of third annular patterns, any two of the plurality of third annular patterns are coaxially arranged, and adjacent two of the third annular patterns are arranged at intervals; the third annular patterns correspond to the first annular patterns one by one, the orthographic projection of the third annular pattern on the substrate at least partially overlaps the orthographic projection of the corresponding first annular pattern on the substrate; the second insulating layer is provided with a plurality of cavities; the cavities correspond to the first annular patterns, and the orthographic projection of the cavity on the substrate is located within the orthographic projection of the corresponding first annular pattern on the substrate.

2. The ultrasonic imaging device of claim 1, wherein, For the same transmitting electrode, the shape of the first annular pattern located in the innermost layer is arranged as a solid shape.

3. The ultrasonic imaging device of claim 1, wherein, The receiving electrode comprises a plurality of second annular patterns, any two of the plurality of second annular patterns are coaxially arranged, and adjacent two of the second annular patterns are arranged at intervals; the second annular patterns correspond to the first annular patterns one by one, and the orthographic projection of the second annular pattern on the substrate at least partially overlaps the orthographic projection of the corresponding first annular pattern on the substrate.

4. The ultrasonic imaging device of claim 3, wherein, The driving circuit layer comprises a first thin film transistor; the first thin film transistor corresponds to the receiving electrode one by one; for the same receiving electrode, the plurality of second annular patterns are electrically connected to the first thin film transistor corresponding to the receiving electrode; the second annular pattern is electrically connected to the source electrode of the first thin film transistor; or, the second annular pattern is electrically connected to the gate electrode of the first thin film transistor.

5. The ultrasonic imaging device of claim 4, wherein, The receiving electrode is located between the piezoelectric layer and the driving circuit layer; the transmitting electrode is located on the side of the piezoelectric layer away from the driving circuit layer.

6. The ultrasonic imaging device of claim 5, wherein, The ultrasonic imaging device further comprises a first insulating layer; the first insulating layer is located between the receiving electrode and the piezoelectric layer; the transmitting electrode is in direct contact with the piezoelectric layer.

7. An ultrasonic imaging device according to any one of claims 1 to 6, characterized in that, For one transmitting electrode, the number of first annular patterns is greater than or equal to 3.

8. A driving method applied to the ultrasonic imaging device according to any one of claims 1 to 7, characterized in that, For the same transmitting electrode, sequentially provide the plurality of first annular patterns with transmitting signals from outside to inside in time sequence. The ultrasonic imaging device comprises:

9. An ultrasound imaging device, characterized by any one of claims 1-7. any one of claims 1-7.

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