A flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a preparation method thereof

Abstract

The application discloses a flexible perovskite solar cell containing an Al2O3 buried bottom interface treatment layer and a preparation method thereof, and belongs to the technical field of perovskite solar cells. 0.96 MA 0.04 Cs 0.04 An Al2O3 buried bottom interface treatment layer is arranged between a SnO2 electron transport layer and a FA 0.96 MA 0.04 Cs 0.04 PbI3 perovskite absorption layer, the introduction of the Al2O3 buried bottom interface treatment layer effectively inhibits the non-radiative recombination of carriers at the buried bottom interface. Meanwhile, a flat substrate surface is favorable for improving the crystallization quality of a perovskite thin film in the next step, eliminates the pores of the buried bottom interface, makes the perovskite absorption layer thin film grains uniform, and the excellent photoelectric performance and device efficiency will help to promote the further development of the flexible perovskite solar cell.

Description

Technical Field

[0001] This invention belongs to the field of flexible perovskite solar cell technology, specifically relating to a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its preparation method. Background Technology

[0002] In recent years, flexible perovskite solar cells have shown great promise in aerospace and flexible electronics fields due to their advantages such as high power-to-weight ratio, tunable bandgap, simple fabrication process, low cost, and portability. Thanks to the joint efforts of researchers, the photoelectric conversion efficiency of flexible perovskite solar cells has now exceeded 25%. Traditional flexible perovskite solar cells often use tin oxide as the electron transport layer. However, tin dangling bonds and oxygen vacancy defects on the surface of the tin oxide electron transport layer can trap charge carriers, thus affecting the quality of the buried interface of the flexible perovskite solar cell. This leads to increased non-radiative recombination of charge carriers, ultimately making it difficult to improve the device's photoelectric conversion efficiency.

[0003] To address the defects at the SnO2 electron transport layer / perovskite layer buried interface, the surface energy between the flexible substrate and the perovskite precursor solution differs significantly from that of traditional rigid glass substrates, resulting in an insufficient number of nucleation sites. Consequently, perovskite tends to crystallize unevenly on the flexible substrate, resulting in poor coverage of the perovskite film composed of irregularly shaped particles. This leads to low quality at the buried interface of the perovskite film, ultimately hindering the improvement of the device's photoelectric conversion efficiency. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its preparation method, so as to solve the problems of poor film quality of existing perovskite buried interface, serious non-radiative recombination loss of charge carriers, and difficulty in improving device performance.

[0005] To achieve the above objectives, the present invention employs the following technical solution:

[0006] A method for fabricating a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer, characterized by comprising the following steps:

[0007] Step 1: Clean the organic polymer substrate sequentially with cleaning agent and water, dry it, and then treat it with ultraviolet ozone to obtain the pretreated organic polymer substrate.

[0008] Step 2: Spin-coat SnO2 precursor solution onto an organic polymer substrate, and obtain SnO2 electron transport layer after heat treatment;

[0009] Step 3: Spin-coat the Al2O3 nanoparticle solution onto the SnO2 electron transport layer, and obtain the Al2O3 buried interface treatment layer after heat treatment;

[0010] Step 4: Spin-coat FA onto the Al2O3 buried interface treatment layer. 0.96 MA 0.04 Cs 0.04 PbI3 perovskite precursor solution, after heat treatment, to obtain perovskite absorber layer;

[0011] Step 5: Spin-coat PEAI perovskite passivation solution onto the perovskite absorber layer to obtain the PEAI perovskite passivation layer.

[0012] Step 6: Spin-coat Spiro-OMeTAD solution onto the PEAI passivation layer to obtain the Spiro-OMeTAD hole transport layer;

[0013] Step 7: Deposit metal electrodes on the Spiro-OMeTAD hole transport layer to complete the fabrication of the perovskite solar cell.

[0014] A further improvement of the present invention is that:

[0015] Preferably, in step 3, the Al2O3 nanoparticle solution is a mixed solution of Al2O3 nanoparticles dispersed in isopropanol, and the mixing volume ratio of Al2O3 nanoparticles to isopropanol is 1:(1-10).

[0016] Preferably, in step 3, the magnetic stirring speed is 200-1500 rpm, and the magnetic stirring time is 1-5 hours.

[0017] Preferably, in step 3, the spin-coating speed of the Al2O3 nanoparticle solution is 1000-5000 rpm, and the spin-coating time is 10-30 s.

[0018] Preferably, in step 3, the heat treatment temperature is 90-120℃ and the heat treatment time is 5-30 minutes.

[0019] Preferably, in step 3, the heat-treated Al2O3 subsurface interface treatment layer is treated with ultraviolet ozone for 5–20 min.

[0020] Preferably, in step 4, FA 0.96 MA 0.04 Cs 0.04 The concentration of the PbI3 perovskite precursor solution was 1.2-1.7 M.

[0021] Preferably, in step 2, the spin coating speed of the SnO2 electron transport layer is 4000-6000 rpm, the spin coating time is 30-50 s, the heat treatment temperature is 100-150℃, and the heat treatment time is 30-90 min.

[0022] Preferably, in step 4, the spin coating speed of the perovskite precursor solution is 6000 rpm, the spin coating time is 5 s, the heat treatment temperature is 100-120℃, and the heat treatment time is 10-30 min.

[0023] A flexible perovskite solar cell containing an Al2O3 buried interface treatment layer, prepared by any of the above methods, comprises, from bottom to top, an organic polymer substrate, a SnO2 electron transport layer, an Al2O3 buried interface treatment layer, and a FA layer. 0.96 MA 0.04 Cs 0.04 The structure consists of a PbI3 perovskite absorber layer, a PEAI perovskite passivation layer, a Spiro-OMeTAD hole transport layer, and a metal electrode.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] This invention discloses a method for fabricating a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer. In this method, Al2O3 is mixed with H2O, and the diluted solution is coated onto a SnO2 electron transport layer. Since defects on the surface of the tin oxide electron transport layer can trap charge carriers and increase nonradiative recombination, the introduction of the Al2O3 buried interface treatment layer acts as a blocking layer. After deposition, the alumina dispersion first fills the vacancies on the tin oxide surface, making the tin oxide / alumina surface smoother. Secondly, the alumina layer, as a blocking layer, can also reduce the diffusion of the perovskite layer into the tin oxide layer, thus helping to improve device performance. The alumina layer, acting as a blocking layer, reduces the contact between the perovskite layer and the tin oxide electron transport layer, effectively suppressing nonradiative recombination of charge carriers at the buried interface. Meanwhile, the smooth buried surface facilitates the formation of more nucleation sites in the perovskite precursor solution during the subsequent perovskite thin film formation, improving crystallization quality, eliminating pores at the buried interface, and resulting in uniform perovskite absorber layer grains. This improved perovskite film morphology, increased perovskite grain size, reduced grain boundaries, reduced buried interface defects, increased carrier extraction efficiency, and reduced non-radiative recombination losses of carriers due to interface defects are all effective strategies for ultimately improving the device's photoelectric conversion efficiency and stability. The excellent photoelectric performance and device efficiency of this perovskite solar cell will contribute to the further development of flexible perovskite solar cells.

[0026] Furthermore, Al2O3 nanoparticles make the surface of the SnO2 electron transport layer smoother, enabling the perovskite layer to be deposited uniformly.

[0027] Furthermore, by limiting the spin coating speed and spin coating time, the thickness of the passivation layer formed by spin coating at the buried interface can meet the requirements.

[0028] This invention also discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer. This flexible perovskite solar cell effectively suppresses nonradiative recombination of charge carriers by reducing the contact between the perovskite layer and the tin oxide electron transport layer, ultimately achieving a maximum photoelectric conversion efficiency of 23.83%. Compared to the previous SnO2 electron transport layer, the flat substrate surface is beneficial to improving the crystallinity quality of the perovskite thin film. Its excellent photoelectric performance and device efficiency will help promote the further development of flexible perovskite solar cells. Attached Figure Description

[0029] Figure 1 The electron mobility diagrams are shown for the SnO2 electron transport layer (Target) and the reference SnO2 electron transport layer (Control) of Al2O3 nanoparticles prepared by the method described in this invention.

[0030] Figure 2 The conductivity diagrams show the SnO2 electron transport layer (Target) and the reference SnO2 electron transport layer (Control) of Al2O3 nanoparticles prepared by the method described in this invention.

[0031] Figure 3 The images show scanning electron microscope (SEM) images of the upper surface of perovskite films on different substrates prepared by the method described in the examples of the present invention; wherein, (a) is a comparative example of perovskite films prepared directly on the SnO2 electron transport layer; and (b) is an example of perovskite films prepared directly on the SnO2 electron transport layer in Example 1.

[0032] Figure 4 These are X-ray diffraction (XRD) patterns of perovskite thin films on different substrates prepared by the method described in the examples of this invention.

[0033] Figure 5 The images show the X-ray diffraction peak intensities and full width at half maximum (FWHM) of perovskite thin films on different substrates prepared by the method described in the examples of this invention.

[0034] Figure 6 The images show scanning electron microscope (SEM) images of the buried interface of perovskite films on different substrates prepared by the method described in the examples of the present invention; wherein (a) is a comparative example of perovskite films prepared directly on the SnO2 electron transport layer; and (b) is an example of perovskite films prepared directly on the SnO2 electron transport layer in Example 1.

[0035] Figure 7 This is a comparison of steady-state fluorescence (PL) spectra of perovskite films on different substrates prepared by the method described in the examples of this invention.

[0036] Figure 8This is a comparison of time-resolved fluorescence (TRPL) spectra of perovskite thin films on different substrates prepared by the method described in this invention example. Detailed Implementation

[0037] The present invention will now be described in further detail with reference to the accompanying drawings:

[0038] To enable those skilled in the art to understand the features and effects of the present invention, the terms and expressions used in the specification and claims are explained and defined in general below. Unless otherwise specified, all technical and scientific terms used herein have the ordinary meaning understood by those skilled in the art regarding the present invention, and in case of conflict, the definitions in this specification shall prevail.

[0039] In this article, unless otherwise specified, “contains,” “includes,” “containing,” “has,” or similar terms cover the meanings of “composed of” and “mainly composed of,” for example, “A contains a” covers the meanings of “A contains a and others” and “A contains only a.”

[0040] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by the appended claims.

[0041] The following examples use instruments and equipment conventional in the art. Experimental methods in the following examples, unless otherwise specified, are generally performed under conventional conditions or as recommended by the manufacturer. All raw materials used in the following examples are conventional commercially available products with specifications conventional in the art. In this specification and the following examples, unless otherwise specified, "%" refers to weight percentage, "parts" refers to parts by weight, and "ratio" refers to weight proportion.

[0042] An embodiment of the present invention is a method for fabricating a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer, comprising the following steps:

[0043] Step 1, Clean the flexible organic polymer substrate: Wipe away surface impurities with lint-free paper, then use a cleaning agent for ultrasonic cleaning for 30 minutes, then use deionized water for ultrasonic cleaning twice for 30 minutes each time, blow dry with a nitrogen gun, and treat with ultraviolet ozone for 5-20 minutes before use. This is to remove residual organic matter on the surface of the flexible organic polymer substrate and increase the wettability of the flexible organic polymer substrate surface.

[0044] The organic polymer base is PET / ITO, and the cleaning agent is a common organic solvent such as ethanol or isopropanol.

[0045] Step 2, Prepare the SnO2 electron transport layer:

[0046] The flexible organic polymer substrate was treated with ultraviolet ozone for 5–20 minutes.

[0047] SnO2 is dissolved in water to obtain SnO2 precursor solution; the SnO2 precursor solution is spin-coated at 4000-6000 rpm for 30-50 s, placed on a hot stage at 100-150℃ for 30-90 minutes, and treated with ultraviolet ozone for 5-20 minutes to obtain SnO2 electron transport layer.

[0048] Step 3: Prepare the Al2O3 buried interface treatment layer;

[0049] First, Al2O3 nanoparticles were dispersed in isopropanol. The Al2O3 nanoparticle alcohol dispersion with a mass fraction of 20% was diluted at a volume ratio of Al2O3:IPA (isopropanol) = 1:(1-10) to form an Al2O3 nanoparticle alcohol dispersion with a mass fraction of 20%. The solution was stirred at room temperature with a magnetic stirring speed of 200-1500 rpm for 1-5 hours to obtain Al2O3 nanoparticle solutions of different concentrations. The exemplary Al2O3 nanoparticle solution concentrations were 1%, 2%, 5%, 10%, 15%, and 20%.

[0050] Preferably, the particle size of Al2O3 nanoparticles is around 100 nm.

[0051] It should be noted that if the concentration of alumina is too low, a dense blocking layer may not be formed. However, if the concentration is too high, the arrangement of the alumina at the interface may not be so regular. It is worth noting, though, that the performance of both the thin film and the device is improved when alumina is used.

[0052] Al2O3 nanoparticle solutions of different concentrations were spin-coated onto the SnO2 electron transport layer at a spin speed of 1000–5000 rpm and a spin time of 10–30 s. The heat treatment process involved placing the SnO2 electron transport layer coated with Al2O3 nanoparticle solution on a hot stage and heating it at 90–120 °C for 5–30 min. After heating, the layer was subjected to ultraviolet ozone treatment for 5–20 min.

[0053] Step 4: Prepare the perovskite absorber layer;

[0054] Preparation of FA at 1.2-1.7 M 0.96 MA 0.04 Cs 0.04 PbI3 perovskite precursor solution, FA 0.96 MA 0.04 Cs 0.04The PbI3 precursor solution was stirred for 4 to 6 hours or more, and then filtered through a polytetrafluoroethylene filter membrane with a pore size of 0.45 μm to obtain a clear perovskite precursor solution for later use.

[0055] The perovskite precursor solution was uniformly coated on the surface of the Al2O3 buried interface treatment layer; it was obtained by spin coating at 6000 rpm for 50 s; 800-1200 μL of diethyl ether was added to the substrate surface during the 5th to 15th s of spin coating, and spin coating was continued for the remaining time; it was then placed on a hot stage at 100-120℃ for 10-30 minutes to obtain the perovskite absorption layer.

[0056] Step 5: The PEAI passivation solution for the perovskite layer is prepared by weighing 5 mg of PEAI and dissolving it in 1 mL of isopropanol and stirring for more than 4 hours. The perovskite passivation solution is then spin-coated onto the perovskite absorption layer at a speed of 3000-5000 rpm for 30-40 seconds to obtain the passivation layer.

[0057] Step 6: Preparation of Spiro-OMeTAD Hole Transport Layer. To prepare the hole transport layer solution, dissolve 0.90 g of Spiro-OMeTAD in 1 mL of chlorobenzene, add 22 μL of pre-prepared Li-TFSI solution (520 mg / mL) and 36 μL of tBP solution, stir at room temperature in the dark for 4-6 hours, and then filter through a 0.45 μm pore size polytetrafluoroethylene filter membrane to obtain the Spiro-OMeTAD solution. After annealing, cool the perovskite film to room temperature, and spin-coat the Spiro-OMeTAD solution onto the perovskite substrate at 5000 rpm for 30 seconds to obtain the hole transport layer. Store in a desiccator for 4-6 hours.

[0058] Step 6, Au electrode deposition: The oxidized film is transferred into the evaporation chamber, and a 60–120 nm thick Au electrode is deposited using thermal evaporation. The effective cell area of ​​the mask is 0.09 cm². 2 .

[0059] Step 7: Use a solar simulator under standard sunlight (AM 1.5G, 100mW / cm²). 2 ) Measure open circuit voltage (V) OC ), short-circuit current (J) SC The scanning range of the solar simulator, including parameters such as fill factor (FF) and photoelectric conversion efficiency (PCE), is 1.2-0V, with a delay time of 10-50ms and a scanning step width of 0.01-0.02V.

[0060] The perovskite solar cell device in this invention consists of, in sequence, a flexible organic polymer substrate, a SnO2 electron transport layer, an Al2O3 buried interface treatment layer, a perovskite absorption layer, a Spiro-OMeTAD, and an Au electrode.

[0061] This invention spin-coats Al2O3 nanoparticles onto the surface of a SnO2 electron transport layer, improving the electron mobility and conductivity of the SnO2 electron transport layer, effectively suppressing nonradiative recombination of charge carriers at the buried interface, and enhancing the carrier transport efficiency. Simultaneously, it improves the crystallinity of the perovskite film and reduces porosity at the buried interface.

[0062] The following description, in conjunction with specific embodiments, provides further details.

[0063] Comparative Example

[0064] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0065] Step 1, Fabrication of the electron transport layer:

[0066] First, SnO2 is diluted with ultrapure water at a volume ratio of SnO2:H2O = 1:2 to obtain SnO2 precursor solution.

[0067] The organic polymer flexible substrate was treated with ultraviolet ozone for 12 minutes. The SnO2 precursor solution was spin-coated onto the organic polymer flexible substrate at 5000 rpm for 40 seconds. The substrate was then placed on a hot plate at 100°C for 40 minutes to obtain the SnO2 electron transport layer.

[0068] Step 2, Prepare the perovskite absorber layer

[0069] Preparation of the perovskite absorber layer: 70 μl of 1.4 M FA was transferred... 0.96 MA 0.04 Cs 0.04 The PbI3 perovskite precursor solution was uniformly coated onto the Al2O3 buried substrate passivation layer; at the 10th second of spin coating, 1000 μL of the antisolvent diethyl ether was added to the perovskite surface, followed by the preparation of FA. 0.96 MA 0.04 Cs 0.04 The PbI3 perovskite film was annealed by placing it on a hot plate at 120°C for 30 minutes.

[0070] Step 3, Prepare the hole transport layer

[0071] To prepare the hole transport layer, 0.90 g of Spiro-OMeTAD was dissolved in 1 mL of chlorobenzene, and 22 μL of a pre-prepared Li-TFSI solution (520 mg / mL) and 36 μL of tBP solution were added. The mixture was stirred at room temperature in the dark for 6 h, and then filtered through a 0.45 μm PTFE membrane to obtain the Spiro-OMeTAD solution. The annealed perovskite film was cooled to room temperature, and the Spiro-OMeTAD solution was spin-coated onto the perovskite substrate at 5000 rpm for 30 s to obtain the hole transport layer. The layer was then dried and stored in the dark for 6 h.

[0072] Step 4, Au electrode deposition: The oxidized film is transferred into the evaporation chamber, and an 80nm thick Au electrode is deposited using thermal evaporation. The effective area of ​​the cell on the mask is 0.09cm². 2 .

[0073] Example 1

[0074] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0075] Step 1, Fabrication of the electron transport layer:

[0076] First, SnO2 is diluted with ultrapure water at a volume ratio of SnO2:H2O = 1:2 to obtain SnO2 precursor solution.

[0077] The organic polymer flexible substrate was treated with ultraviolet ozone for 12 minutes. The SnO2 precursor solution was spin-coated onto the organic polymer flexible substrate at 5000 rpm for 40 seconds. The substrate was then placed on a hot plate at 100°C for 40 minutes to obtain the SnO2 electron transport layer.

[0078] Preparation of Al2O3 buried interface passivation layer:

[0079] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0080] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0081] Preparation of the perovskite absorber layer: 70 μl of 1.4 M FA was transferred... 0.96 MA 0.04 Cs 0.04The PbI3 perovskite precursor solution was uniformly coated onto the Al2O3 buried substrate passivation layer; at the 10th second of spin coating, 1000 μL of the antisolvent diethyl ether was added to the perovskite surface, followed by the preparation of FA. 0.96 MA 0.04 Cs 0.04 The PbI3 perovskite film was annealed by placing it on a hot plate at 120°C for 30 minutes.

[0082] To prepare the hole transport layer, 0.90 g of Spiro-OMeTAD was dissolved in 1 mL of chlorobenzene, and 22 μL of a pre-prepared Li-TFSI solution (520 mg / mL) and 36 μL of tBP solution were added. The mixture was stirred at room temperature in the dark for 6 h, and then filtered through a 0.45 μm PTFE membrane to obtain the Spiro-OMeTAD solution. The annealed perovskite film was cooled to room temperature, and the Spiro-OMeTAD solution was spin-coated onto the perovskite substrate at 5000 rpm for 30 s to obtain the hole transport layer. The layer was then dried and stored in the dark for 6 h.

[0083] Au electrode deposition: The oxidized thin film is transferred into the evaporation chamber, and an 80nm thick Au electrode is deposited using thermal evaporation. The effective area of ​​the cell on the mask is 0.09cm². 2 .

[0084] The characterization and analysis of a high-efficiency perovskite solar cell according to the present invention includes the following:

[0085] Figure 1 The image shows the electron mobility of the SnO2 electron transport layer (Target) treated with Al2O3 nanoparticles prepared by the method described in this invention, and the comparative SnO2 electron transport layer (Control). The electron mobility of the SnO2 electron transport layer is significantly improved after treatment with Al2O3 nanoparticles.

[0086] Figure 2 The diagram shows the conductivity of the SnO2 electron transport layer (Target) treated with Al2O3 nanoparticles prepared by the method described in this invention, and the comparative SnO2 electron transport layer (Control). The conductivity of the SnO2 electron transport layer is significantly improved after treatment with Al2O3 nanoparticles.

[0087] Figure 3 The images show scanning electron microscope (SEM) images of the upper surface of perovskite films on different substrates (comparative examples and Example 1) prepared by the method described in this invention. The grain size in the optimized perovskite film is significantly increased.

[0088] Figure 4The images show X-ray diffraction (XRD) patterns of perovskite films prepared on different substrates using the method described in this invention. The optimized perovskite film shows a significant enhancement in peak intensity.

[0089] Figure 5 The images show the X-ray diffraction peak intensities and full width at half maximum (FWHM) of perovskite films prepared by the method described in this invention. The enhanced peaks and reduced FWHM of the perovskite films indicate that the perovskite films spin-coated on the Al2O3 nanoparticle-treated layer have better crystallinity.

[0090] Figure 6 The images shown are scanning electron microscope (SEM) images of the buried interface of perovskite films on different substrates prepared by the method described in the examples of the present invention, representing the reduction of pores at the buried interface of perovskite films spin-coated on Al2O3 nanoparticle-treated layers.

[0091] Figure 7 The images show a comparison of steady-state fluorescence (PL) spectra of perovskite films prepared on different substrates using the method described in this invention. The fluorescence intensity of the perovskite film spin-coated on the Al2O3 nanoparticle-treated layer is significantly lower than that of the reference perovskite film, indicating that the electron transport layer effectively extracts the photogenerated carriers and reduces the nonradiative recombination of the carriers.

[0092] Figure 8 This is a comparison of time-resolved fluorescence (TRPL) spectra of perovskite thin films prepared on different substrates using the method described in this invention. The optimized perovskite thin film shows a significant reduction in the lifetime of photogenerated carriers, compared to... Figure 7 The corresponding PL data indicates a decrease in nonradiative recombination of charge carriers.

[0093] Example 2

[0094] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0095] Preparation of Al2O3 buried interface passivation layer:

[0096] Al₂O₃ nanoparticles were dispersed in isopropanol at a volume ratio of 1:1, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0097] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0098] The other steps are the same as in Example 1.

[0099] Example 3

[0100] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0101] Preparation of Al2O3 buried interface passivation layer:

[0102] Al₂O₃ nanoparticles were dispersed in isopropanol at a volume ratio of 1:2. The solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0103] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0104] The other steps are the same as in Example 1.

[0105] Example 4

[0106] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0107] Preparation of Al2O3 buried interface passivation layer:

[0108] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:6, and the solution was stirred at room temperature for 1 hour using a magnetic stirring speed of 1000 rpm.

[0109] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0110] The other steps are the same as in Example 1.

[0111] Example 5

[0112] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0113] Preparation of Al2O3 buried interface passivation layer:

[0114] Al₂O₃ nanoparticles were dispersed in isopropanol at a volume ratio of 1:8, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0115] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0116] The other steps are the same as in Example 1.

[0117] Example 6

[0118] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0119] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:9, and the solution was stirred at room temperature for 1 hour using a magnetic stirring speed of 1000 rpm.

[0120] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0121] The other steps are the same as in Example 1.

[0122] Example 7

[0123] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0124] Preparation of Al2O3 buried interface passivation layer;

[0125] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0126] The Al2O3 precursor solution was kept at 1000 rpm for 30 s, placed on a hot stage at 120 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0127] The other steps are the same as in Example 1.

[0128] Example 8

[0129] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0130] Preparation of Al2O3 buried interface passivation layer;

[0131] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0132] The Al2O3 precursor solution was kept at 2000 rpm for 30 s, placed on a hot stage at 120 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0133] The other steps are the same as in Example 1.

[0134] Example 9

[0135] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0136] Preparation of Al2O3 buried interface passivation layer;

[0137] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0138] The Al2O3 precursor solution was kept at 4000 rpm for 30 s, placed on a hot stage at 120 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0139] The other steps are the same as in Example 1.

[0140] Example 10

[0141] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0142] Preparation of Al2O3 buried interface passivation layer;

[0143] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0144] The Al2O3 precursor solution was kept at 5000 rpm for 30 s, placed on a hot stage at 120℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0145] The other steps are the same as in Example 1.

[0146] Example 11

[0147] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0148] Preparation of Al2O3 buried interface passivation layer;

[0149] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0150] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 90 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0151] The other steps are the same as in Example 1.

[0152] Example 12

[0153] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0154] Preparation of Al2O3 buried interface passivation layer;

[0155] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0156] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 100 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0157] The other steps are the same as in Example 1.

[0158] Example 13

[0159] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0160] Preparation of Al2O3 buried interface passivation layer;

[0161] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0162] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 110 ℃ for 30 minutes, and treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0163] The other steps are the same as in Example 1.

[0164] Example 14

[0165] The present invention discloses a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer and a method for preparing the same, comprising the following preparation steps:

[0166] Preparation of Al2O3 buried interface passivation layer;

[0167] Al2O3 nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour using a magnetic stirrer at 1000 rpm.

[0168] The Al2O3 precursor solution was kept at 3000 rpm for 30 s, placed on a hot stage at 120 ℃ for 10 minutes, and then treated with ultraviolet ozone for 10 minutes to obtain the Al2O3 buried interface passivation layer.

[0169] The other steps are the same as in Example 1.

[0170] Example 15

[0171] In this embodiment, the concentration of the perovskite precursor solution is 1.5M, and the remaining steps and parameters are the same as in Example 1.

[0172] Example 16

[0173] In this embodiment, the concentration of the perovskite precursor solution is 1.2M, and the remaining steps and parameters are the same as in Example 1.

[0174] Example 17

[0175] In this example, the concentration of the perovskite precursor solution was 1.7M, and the remaining steps and parameters were the same as in Example 1.

[0176] Example 18

[0177] In this embodiment, the amount of ether added is 800 μL, and the remaining steps and parameters are the same as in Example 1.

[0178] Example 19

[0179] In this embodiment, the amount of ether added is 1200 μL, and the remaining steps and parameters are the same as in Example 1.

[0180] Example 20

[0181] In this embodiment, the amount of ether added is 1000 μL, and the remaining steps and parameters are the same as in Example 1.

[0182] Example 21

[0183] In this embodiment, after adding diethyl ether to the perovskite absorber layer, it was placed on a hot table at 100°C for 30 minutes. The remaining steps and parameters were the same as in Example 1.

[0184] Example 22

[0185] In this embodiment, after adding diethyl ether to the perovskite absorber layer, it was placed on a hot plate at 110°C for 10 minutes. The remaining steps and parameters were the same as in Example 1.

[0186] Example 23

[0187] In this embodiment, after adding diethyl ether to the perovskite absorber layer, it was placed on a hot plate at 120°C for 20 minutes. The remaining steps and parameters were the same as in Example 1.

[0188] Example 24

[0189] In this embodiment, the spin coating speed of the SnO2 precursor liquid is 4000 rpm and the spin coating time is 50 s. The remaining steps and parameters are the same as in Example 1.

[0190] Example 25

[0191] In this embodiment, the spin coating speed of the SnO2 precursor liquid is 6000 rpm and the spin coating time is 30 s. The remaining steps and parameters are the same as in Example 1.

[0192] Step 26

[0193] In this embodiment, the heat treatment temperature after spin coating of SnO2 precursor liquid is 100℃ and the heat treatment time is 90min. The remaining steps and parameters are the same as in Example 1.

[0194] Example 27

[0195] In this embodiment, the heat treatment temperature after spin coating of SnO2 precursor liquid is 150℃ and the heat treatment time is 30min. The remaining steps and parameters are the same as in Example 1.

[0196] Example 28

[0197] In this embodiment, the heat treatment temperature of the perovskite absorber layer is 100°C and the heat treatment time is 30 minutes. The remaining steps and parameters are the same as in Embodiment 1.

[0198] Example 29

[0199] In this embodiment, the heat treatment temperature of the perovskite absorber layer is 110°C and the heat treatment time is 10 minutes. The remaining steps and parameters are the same as in Embodiment 1.

[0200] Example 30

[0201] In this embodiment, when the Al2O3 nanoparticle alcohol dispersion was mixed and diluted with water, the magnetic stirring speed was 200 rpm and the stirring time was 5 h. The remaining steps and parameters were the same as in Example 1.

[0202] Example 31

[0203] In this embodiment, when the Al2O3 nanoparticle alcohol dispersion was mixed and diluted with water, the magnetic stirring speed was 1500 rpm and the stirring time was 1 h. The remaining steps and parameters were the same as in Example 1.

[0204] Example 32

[0205] In this embodiment, the ultraviolet ozone treatment time of the Al2O3 buried interface treatment layer is 5 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0206] Example 33

[0207] In this embodiment, the ultraviolet ozone treatment time of the Al2O3 buried interface treatment layer is 20 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0208] Comparative Example 1

[0209] This embodiment describes a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer and its fabrication method, which includes the following fabrication steps:

[0210] The device does not have an Al2O3 buried interface treatment layer.

[0211] The other steps are the same as in Example 1.

[0212] The above-mentioned embodiments were tested, and Table 1 was obtained. Table 1 is a comparison chart of the photoelectric conversion efficiency of flexible perovskite solar cells with different concentrations of Al2O3 buried interface passivation layer and process prepared by the method described in the present invention. When the ratio of Al2O3 to H2O is 1:4, the device obtains the best photoelectric conversion efficiency of 23.83%.

[0213] Table 1 Photoelectric conversion efficiency of the examples

[0214]

[0215]

[0216] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for fabricating a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer, characterized in that, Includes the following steps: Step 1: Clean the organic polymer substrate sequentially with cleaning agent and water, dry it, and then treat it with ultraviolet ozone to obtain the pretreated organic polymer substrate. Step 2: Spin-coat SnO2 precursor solution onto an organic polymer substrate, and obtain SnO2 electron transport layer after heat treatment; Step 3: Spin-coat the Al2O3 nanoparticle solution onto the SnO2 electron transport layer, and obtain the Al2O3 buried interface treatment layer after heat treatment; Step 4: Spin-coat FA onto the Al2O3 buried interface treatment layer. 0.96 MA 0.04 Cs 0.04 PbI3 perovskite precursor solution, after heat treatment, to obtain perovskite absorber layer; Step 5: Spin-coat PEAI perovskite passivation solution onto the perovskite absorber layer to obtain the PEAI perovskite passivation layer. Step 6: Spin-coat Spiro-OMeTAD solution onto the PEAI passivation layer to obtain the Spiro-OMeTAD hole transport layer; Step 7: Deposit metal electrodes on the Spiro-OMeTAD hole transport layer to complete the fabrication of the perovskite solar cell.

2. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 3, the Al2O3 nanoparticle solution is a mixed solution of Al2O3 nanoparticles dispersed in isopropanol, and the mixing volume ratio of Al2O3 nanoparticles to isopropanol is 1:(1-10).

3. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 3, the magnetic stirring speed is 200-1500 rpm, and the magnetic stirring time is 1-5 hours.

4. The method for preparing a flexible perovskite solar cell containing an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 3, the spin coating speed of the Al2O3 nanoparticle solution is 1000-5000 rpm, and the spin coating time is 10-30 s.

5. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 3, the heat treatment temperature is 90-120℃ and the heat treatment time is 5-30 minutes.

6. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 3, the heat-treated Al2O3 subsurface interface treatment layer is treated with ultraviolet ozone for 5–20 min.

7. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 4, FA 0.96 MA 0.04 Cs 0.04 The concentration of the PbI3 perovskite precursor solution was 1.2-1.7 M.

8. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 2, the spin coating speed of the SnO2 electron transport layer is 4000-6000 rpm, the spin coating time is 30-50 s, the heat treatment temperature is 100-150℃, and the heat treatment time is 30-90 min.

9. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that, In step 4, the spin coating speed of the perovskite precursor solution is 6000 rpm and the spin coating time is 5 s; the heat treatment temperature is 100-120℃ and the heat treatment time is 10-30 min.

10. A flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer, prepared by any one of claims 1-9, characterized in that, It includes, from bottom to top, an organic polymer substrate, a SnO2 electron transport layer, an Al2O3 buried interface treatment layer, and a FA layer. 0.96 MA 0.04 Cs 0.04 The structure consists of a PbI3 perovskite absorber layer, a PEAI perovskite passivation layer, a Spiro-OMeTAD hole transport layer, and a metal electrode.

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