OLED structure and manufacturing method thereof

Abstract

The invention discloses an OLED structure and a manufacturing method thereof. The manufacturing method comprises the following steps: 1) manufacturing an anode layer on a substrate; 2) manufacturing a pixel definition layer on the anode layer; 3) preparing an OLED film layer and other matched film layers; and (4) manufacturing the Lens, and shifting the positions of the Lens (lens layer) and the pixel definition layer according to the design and movement of the corresponding mask (mask) to obtain a graph of a relative position so as to improve the light-emitting brightness at a specific angle, meet the light-emitting requirements of different ray machine equipment and be beneficial to fully utilizing the emitted light. Various high-performance structures can be formed, manufacturing is convenient, simple and efficient, and compared with an existing technology, working procedures are reduced, and cost is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of OLED, and in particular relates to an OLED structure and a manufacturing method thereof. Background Art

[0002] In the process of implementing the present invention, the inventors found that the prior art has at least the following problems:

[0003] Compared with traditional AMOLED display technology, silicon-based OLED microdisplay uses single-crystal silicon chips as the substrate and uses mature CMOS technology to make its pixel size smaller and more integrated. It can be made into near-eye display products comparable to large-screen displays and has attracted widespread attention. Based on its technical advantages and broad market, silicon-based OLED microdisplay will set off a new wave of near-eye display in the military and consumer electronics fields, bringing users an unprecedented visual experience.

[0004] However, the traditional method of manufacturing OLED structures has the problems of complex processes and high costs.

[0005] CN108269942B-An OLED structure and a method for manufacturing the same, discloses an OLED structure and a method for manufacturing the same, the OLED structure comprising: a substrate; an anode electrode layer formed on the substrate, the anode electrode layer comprising a P-type carbon nanotube array; an organic electroluminescent unit formed on the anode electrode layer; a cathode electrode layer formed on the organic electroluminescent unit, the cathode electrode layer comprising an N-type carbon nanotube array; also fails to solve the above technical problems. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide an OLED structure and a manufacturing method thereof, which can form a high-performance structure and save steps and costs compared with traditional processes.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0008] An OLED structure has a series of pixel structures arranged side by side, wherein the pixel structure has:

[0009] Anode layer;

[0010] A pixel definition layer is formed on the anode layer; a first pixel definition layer and a second pixel definition layer are respectively provided on both sides of the anode layer;

[0011] An OLED is formed on the anode layer, the OLED being located between the first pixel definition layer and the second pixel definition layer;

[0012] A lens layer formed on the OLED;

[0013] The left edge of the first lens is equal to or greater than the right edge of the first pixel definition layer of the first pixel; the right edge of the second lens is less than or equal to the right edge of the first pixel definition layer of the second pixel.

[0014] An OLED structure has a series of pixel structures arranged side by side, wherein the pixel structure has:

[0015] Anode layer;

[0016] A pixel definition layer is formed on the anode layer; a first pixel definition layer and a second pixel definition layer are respectively provided on both sides of the anode layer;

[0017] An OLED is formed on the anode layer, the OLED being located between the first pixel definition layer and the second pixel definition layer;

[0018] A lens layer formed on the OLED;

[0019] The right edge of the second lens is equal to or smaller than the right edge of the second pixel definition layer of the second pixel; the left edge of the first lens is smaller than or equal to the left edge of the second pixel definition layer of the first pixel.

[0020] The above OLED structure and its manufacturing method include the following steps:

[0021] 1) Fabricating an anode layer on a substrate;

[0022] 2) making a pixel definition layer on the anode layer;

[0023] 3) Preparation of OLED film layers and other matching film layers;

[0024] 4) Make Lens (lens layer).

[0025] The above step 1) includes the following steps: 1-1) depositing an anode layer on a substrate; 1-2) spin coating a layer of PR glue (photoresist), followed by exposure, development, and etching to produce a patterned anode layer.

[0026] In the above step 1-1), the anode layer film material is one or a combination of Ti (titanium), Al (aluminum), and ITO (indium tin oxide).

[0027] The above step 2) includes the following steps: 2-1) depositing a pixel definition layer; 2-2) spin coating a layer of PR glue (photoresist glue), followed by exposure, development, and etching to produce a patterned pixel definition layer.

[0028] In the above step 2-1), the material of the pixel definition layer is one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride).

[0029] The above step 3) includes the following steps: 3-1) evaporating each film layer of the OLED device; 3-2) the planarization layer is formed by making a corresponding PR glue (photoresist glue), and then exposing and developing it to form a patterned graphic.

[0030] In the above step 3-1), if the OLED device structure is a single device structure that emits red light, green light or blue light, then there is no need to match the corresponding red filter, green filter, and blue filter; if the OLED device structure is a device structure that emits white light as a whole, then there is a need to match the corresponding red filter, green filter, and blue filter.

[0031] In the above step 4), a lens layer is produced, and then exposed and developed to form a patterned image.

[0032] In the above step 4), the positions of the lens layer and the pixel definition layer are shifted according to the design by moving the corresponding mask to obtain a relative position pattern.

[0033] One of the above technical solutions has the following advantages or beneficial effects: the positions of the lens layer and the pixel definition layer are designed, and the corresponding mask is moved for position offset, so as to obtain a relative position pattern, the purpose of which is to improve the brightness of the light output at a specific angle, thereby meeting the light output requirements of different optical equipment and facilitating full utilization of the emitted light. A variety of high-performance structures can be formed, the production is convenient, simple and efficient, and it saves processes and costs compared to the current process. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic structural diagram of the OLED structure provided in Embodiment 1 and Embodiment 2 of the present invention;

[0035] Figure 2 This is a schematic structural diagram of an OLED structure provided in Embodiment 3 of the present invention;

[0036] Figure 3 This is a schematic structural diagram of an OLED structure provided in Embodiment 4 of the present invention;

[0037] Figure 4 This is a schematic structural diagram of an OLED structure provided in Embodiment 5 of the present invention;

[0038] The marks in the above figures are: 1, anode layer, 2, pixel definition layer, 21, first pixel definition layer, 22, second pixel definition layer, 3, OLED, 4, lens (lens layer), 41, first lens, 42, second lens. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0040] Embodiment 1

[0041] See also Figure 1 , an OLED structure and a method for manufacturing the same, comprising the following steps:

[0042] 1) Making an anode layer 1 on a substrate; 2) Making a pixel definition layer 2 on the anode layer 1; 3) Preparing an OLED film layer and other matching film layers; 4) Making a Lens (lens layer) 4.

[0043] The above step 1) includes the following steps: 1-1) depositing an anode layer on a substrate; 1-2) spin coating a layer of PR glue (photoresist glue), and then exposing, developing, and etching to produce a patterned anode layer. In the above step 1-1), the anode layer material is one or more of Ti (titanium), Al (aluminum), and ITO (indium tin oxide) in combination, the purpose of which is to improve the reflectivity and surface roughness of the anode layer, which is conducive to the emission of light.

[0044] The above step 2) includes the following steps: 2-1) depositing a pixel definition layer 2; 2-2) spin coating a layer of PR glue (photoresist glue), and then exposing, developing, and etching to produce a patterned pixel definition layer 2. In the above step 2-1), the pixel definition layer material is one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride), in order to improve the insulation of the pixel definition layer 2 and reduce the crosstalk between the pixel light-emitting layers.

[0045] The above step 3) includes the following steps: 3-1) evaporation of each film layer of the OLED device; 3-2) the planarization layer is formed by making a corresponding PR glue (photoresist glue), and then exposing and developing to form a patterned graphic, the purpose is to form a specific opening shape to form a designated light-emitting area. In the above step 3-1), if the OLED device structure is a single device structure that emits red light, green light or blue light, then there is no need to match the corresponding red filter, green filter, and blue filter; if the OLED device structure is a device structure that emits white light as a whole, then it is necessary to match the corresponding red filter, green filter, and blue filter.

[0046] In the above step 4), a layer of Lens (lens layer) 4 film is made, and then exposed and developed to form a patterned graphic. In the above step 4), the position of Lens (lens layer) 4 and pixel definition layer 2 is shifted according to the design, and the corresponding mask is moved to obtain a relative position graphic, the purpose of which is to increase the brightness of the light output at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the emitted light.

[0047] A variety of high-performance structures can be formed, the production is convenient, simple and efficient, and it saves steps and costs compared to the current process.

[0048] Embodiment 2

[0049] An OLED structure has a series of pixel structures arranged side by side, wherein the pixel structure has: an anode layer 1; a pixel definition layer 2 formed on the anode layer 1; a first pixel definition layer 21 and a second pixel definition layer 22 are respectively provided on both sides of the anode layer 1; an OLED is formed on the anode layer 1, and the OLED is located between the first pixel definition layer 21 and the second pixel definition layer 22; a lens layer is formed on the OLED; the left edge of the first lens 41 is equal to or greater than the right edge of the first pixel definition layer 21 of the first pixel; the right edge of the second lens 42 is less than or equal to the right edge of the first pixel definition layer 21 of the second pixel, such as Figure 1 This design can gather the brightness on both sides to the center area, and the gathering angle can be adjusted to meet the needs of high brightness at a specific angle of the optical machine.

[0050] The process is as follows:

[0051] Step 1: Make an anode layer 1 on the substrate. The specific method is as follows:

[0052] 1-1: Use PVD equipment to physically vapor deposit the anode layer on the substrate. The anode layer material can be one or a combination of Ti (titanium), Al (aluminum), and ITO (indium tin oxide). The purpose is to improve the reflectivity and surface roughness of the anode layer, which is beneficial to the emission of light.

[0053] 1-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist), and then expose, develop, and etch to make a patterned anode layer film;

[0054] Step 2: Make pixel definition layer 2 on anode layer 1. The specific method is as follows:

[0055] 2-1: Use CVD equipment to chemically vapor deposit the pixel definition layer 2. The pixel definition layer material can be one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride). The purpose is to improve the insulation of the pixel definition layer 2 and reduce the crosstalk between pixel light-emitting layers.

[0056] 2-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist glue), and then expose, develop, and etch to make a patterned pixel definition layer 2, the purpose of which is to form a specific opening shape to form a designated light-emitting area.

[0057] Step 3: Prepare OLED film layer and other matching film layers such as planarization layer.

[0058] 3-1: Use evaporation packaging equipment to evaporate each film layer of the OLED device. It should be noted that the OLED device structure can be a single device structure that emits red light, green light, and blue light. In this case, there is no need to match the corresponding red filter, green filter, and blue filter; it can also be a device structure that emits white light as a whole. In this case, it needs to be matched with the corresponding red filter, green filter, and blue filter.

[0059] 3-2: The planarization layer and red / green / blue color filters are made by spin coating equipment to form a corresponding layer of PR glue (photoresist), which is then exposed and developed to form a patterned graphic. The purpose is to match the needs of the OLED light-emitting layer, so that full-color graphics can be formed.

[0060] Step 4: Then make Lens (lens layer) 4. The specific method is as follows:

[0061] A layer of Lens layer 4 film (lens layer) is made by spin coating equipment, and then exposed and developed to form a patterned graphic. The position of Lens layer 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask to obtain a relative position graphic. The purpose is to increase the brightness of light at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the emitted light.

[0062] A variety of high-performance structures can be formed, the production is convenient, simple and efficient, and it saves steps and costs compared to the current process.

[0063] Embodiment 3

[0064] An OLED structure has a series of pixel structures arranged side by side, the pixel structure having: an anode layer 1; a pixel definition layer 2, formed on the anode layer 1; a first pixel definition layer 21 and a second pixel definition layer 22 are respectively provided on both sides of the anode layer 1; an OLED, formed on the anode layer 1, the OLED is located between the first pixel definition layer 21 and the second pixel definition layer 22; a lens layer, formed on the OLED; the left edge of the first lens 41 is equal to or greater than the right edge of the first pixel definition layer 21 of the first pixel; the right edge of the second lens 42 is less than or equal to the right edge of the first pixel definition layer 21 of the second pixel. The lens layer 4 is not limited to a single layer, double layer or multiple layers, such as Figure 2 As shown; double or multiple layers can more finely adjust the maximum light output angle.

[0065] The process is as follows:

[0066] Step 1: Make an anode layer 1 on the substrate. The specific method is as follows:

[0067] 1-1: Use PVD equipment to physically vapor deposit the anode layer on the substrate. The anode layer material can be one or a combination of Ti (titanium), Al (aluminum), and ITO (indium tin oxide). The purpose is to improve the reflectivity and surface roughness of the anode layer, which is beneficial to the emission of light.

[0068] 1-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist), and then expose, develop, and etch to make a patterned anode layer film.

[0069] Step 2: Make pixel definition layer 2 on anode layer 1. The specific method is as follows:

[0070] 2-1: Use CVD equipment to chemically vapor deposit the pixel definition layer 2. The material of the pixel definition layer 2 can be one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride). The purpose is to improve the insulation of the pixel definition layer 2 and reduce the crosstalk between the pixel light-emitting layers.

[0071] 2-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist glue), and then expose, develop, and etch to make a patterned pixel definition layer 2, the purpose of which is to form a specific opening shape and form a designated light-emitting area.

[0072] Step 3: Prepare OLED film layer and other matching film layers such as planarization layer.

[0073] 3-1: Use evaporation packaging equipment to evaporate each film layer of the OLED device. It should be noted that the OLED device structure can be a single device structure that emits red light, green light, and blue light. In this case, there is no need to match the corresponding red filter, green filter, and blue filter; it can also be a device structure that emits white light as a whole. In this case, it needs to be matched with the corresponding red filter, green filter, and blue filter.

[0074] 3-2: The planarization layer and red / green / blue color filters are made by spin coating equipment to form a corresponding layer of PR glue (photoresist), which is then exposed and developed to form a patterned graphic. The purpose is to match the needs of the OLED light-emitting layer, so that full-color graphics can be formed.

[0075] Step 4: Then make Lens (lens layer) 4. The specific method is as follows:

[0076] 4-1: Use a spin coating device to make a layer of Lens (lens layer) 4 film, and then expose and develop it to form a patterned graphic. The position of Lens (lens layer) 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask (mask plate) to obtain a relative position graphic. The purpose is to increase the brightness of light at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the emitted light.

[0077] 4-2: Use a spin coating device to make the second layer of Lens (lens layer) 4 film, and then expose and develop it to form a patterned graphic. The position of Lens (lens layer) 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask (mask plate) to obtain a relative position graphic. The purpose is to further refine and improve the light output brightness at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the light emitted at a specific angle.

[0078] A variety of high-performance structures can be formed, the production is convenient, simple and efficient, and it saves steps and costs compared to the current process.

[0079] Embodiment 4

[0080] An OLED structure has a series of pixel structures arranged side by side, wherein the pixel structure comprises: an anode layer 1; a pixel definition layer 2 formed on the anode layer 1; a first pixel definition layer 21 and a second pixel definition layer 22 are respectively provided on both sides of the anode layer 1; an OLED is formed on the anode layer 1, and the OLED is located between the first pixel definition layer 21 and the second pixel definition layer 22; a lens layer is formed on the OLED; the right edge of the second lens 42 is equal to or smaller than the right edge of the second pixel definition layer 22 of the second pixel; the left edge of the first lens 41 is smaller than or equal to the left edge of the second pixel definition layer 22 of the first pixel, such as Figure 3 shown.

[0081] The process is as follows:

[0082] Step 1: Make an anode layer 1 on the substrate. The specific method is as follows:

[0083] 1-1: Use PVD equipment to physically vapor deposit the anode layer on the substrate. The anode layer material can be one or a combination of Ti (titanium), Al (aluminum), and ITO (indium tin oxide). The purpose is to improve the reflectivity and surface roughness of the anode layer, which is beneficial to the emission of light.

[0084] 1-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist), and then expose, develop, and etch to make a patterned anode layer film.

[0085] Step 2: Make pixel definition layer 2 on anode layer 1. The specific method is as follows:

[0086] 2-1: Use CVD equipment to chemically vapor deposit the pixel definition layer 2. The material of the pixel definition layer 2 can be one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride). The purpose is to improve the insulation of the pixel definition layer 2 and reduce the crosstalk between the pixel light-emitting layers.

[0087] 2-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist glue), and then expose, develop, and etch to make a patterned pixel definition layer 2, the purpose of which is to form a specific opening shape and form a designated light-emitting area.

[0088] Step 3: Prepare OLED film layer and other matching film layers such as planarization layer.

[0089] 3-1: Use evaporation packaging equipment to evaporate each film layer of the OLED device. It should be noted that the OLED device structure can be a single device structure that emits red light, green light, and blue light. In this case, there is no need to match the corresponding red filter, green filter, and blue filter; it can also be a device structure that emits white light as a whole. In this case, it needs to be matched with the corresponding red filter, green filter, and blue filter.

[0090] 3-2: The planarization layer and red / green / blue color filters are made by spin coating equipment to form a corresponding layer of PR glue (photoresist), which is then exposed and developed to form a patterned graphic. The purpose is to match the needs of the OLED light-emitting layer, so that full-color graphics can be formed.

[0091] Step 4: Then make Lens (lens layer) 4. The specific method is as follows:

[0092] 4-1: Use a spin coating device to make a layer of Lens (lens layer) 4 film, and then expose and develop it to form a patterned graphic. The position of Lens (lens layer) 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask (mask plate) to obtain a relative position graphic. The purpose is to increase the brightness of light at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the emitted light.

[0093] A variety of high-performance structures can be formed, the production is convenient, simple and efficient, and it saves steps and costs compared to the current process.

[0094] Embodiment 5

[0095] An OLED structure has a series of pixel structures arranged side by side, and the pixel structure has: an anode layer 1; a pixel definition layer 2, formed on the anode layer 1; a first pixel definition layer 21 and a second pixel definition layer 22 are respectively provided on both sides of the anode layer 1; an OLED, formed on the anode layer 1, and the OLED is located between the first pixel definition layer 21 and the second pixel definition layer 22; a lens layer, formed on the OLED; the right boundary of the second lens 42 is equal to or less than the right boundary of the second pixel definition layer 22 of the second pixel; the left boundary of the first lens 41 is less than or equal to the left boundary of the second pixel definition layer 22 of the first pixel. The Lens (lens layer) 4 is not limited to a single layer, double layers or multiple layers; double layers or multiple layers can more finely adjust the maximum light output angle. Figure 4 shown.

[0096] The process is as follows:

[0097] Step 1: Make an anode layer 1 on the substrate. The specific method is as follows:

[0098] 1-1: Use PVD equipment to physically vapor deposit the anode layer on the substrate. The anode layer material can be one or a combination of Ti (titanium), Al (aluminum), and ITO (indium tin oxide). The purpose is to improve the reflectivity and surface roughness of the anode layer, which is beneficial to the emission of light.

[0099] 1-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist), and then expose, develop, and etch to make a patterned anode layer film.

[0100] Step 2: Make pixel definition layer 2 on anode layer 1. The specific method is as follows:

[0101] 2-1: Use CVD equipment to chemically vapor deposit the pixel definition layer 2. The material of the pixel definition layer 2 can be one or a combination of SiO (silicon oxide), SiN (silicon nitride), and SiON (silicon oxynitride). The purpose is to improve the insulation of the pixel definition layer 2 and reduce the crosstalk between the pixel light-emitting layers.

[0102] 2-2: Use glue coating equipment to spin-coat a layer of PR glue (photoresist glue), and then expose, develop, and etch to make a patterned pixel definition layer 2, the purpose of which is to form a specific opening shape and form a designated light-emitting area.

[0103] Step 3: Prepare OLED film layer and other matching film layers such as planarization layer.

[0104] 3-1: Use evaporation packaging equipment to evaporate each film layer of the OLED device. It should be noted that the OLED device structure can be a single device structure that emits red light, green light, and blue light. In this case, there is no need to match the corresponding red filter, green filter, and blue filter; it can also be a device structure that emits white light as a whole. In this case, it needs to be matched with the corresponding red filter, green filter, and blue filter.

[0105] 3-2: The planarization layer and red / green / blue color filters are made by spin coating equipment to form a corresponding layer of PR glue (photoresist), which is then exposed and developed to form a patterned graphic. The purpose is to match the needs of the OLED light-emitting layer, so that full-color graphics can be formed.

[0106] Step 4: Then make Lens (lens layer) 4. The specific method is as follows:

[0107] 4-1: Use a spin coating device to make a layer of Lens (lens layer) 4 film, and then expose and develop it to form a patterned graphic. The position of Lens (lens layer) 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask (mask plate) to obtain a relative position graphic. The purpose is to increase the brightness of light at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the emitted light.

[0108] 4-2: Use a spin coating device to make the second layer of Lens (lens layer) 4 film, and then expose and develop it to form a patterned graphic. The position of Lens (lens layer) 4 and pixel definition layer 2 can be shifted according to the design by moving the corresponding mask (mask plate) to obtain a relative position graphic. The purpose is to further refine and improve the light output brightness at a specific angle, thereby meeting the light output requirements of different optical equipment and making full use of the light emitted at a specific angle.

[0109] By adopting the above scheme, a high-performance structure can be formed, and compared with the current process, steps and costs are saved.

[0110] In the description of the present invention, it is necessary to understand that the terms "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inside", "front", "center", "both ends" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0111] In the present invention, unless otherwise clearly stipulated and limited, the terms such as "installation", "setting", "connection", "fixation" and "screw-on" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in the present invention according to the specific circumstances.

[0112] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An OLED structure, characterized in that: A series of pixel structures are arranged side by side, wherein the pixel structure has: Anode layer; A pixel definition layer is formed on the anode layer; a first pixel definition layer and a second pixel definition layer are respectively provided on both sides of the anode layer; An OLED is formed on the anode layer, the OLED being located between the first pixel definition layer and the second pixel definition layer; A lens layer formed on the OLED; A left boundary of the first lens is equal to or greater than a right boundary of the first pixel definition layer of the first pixel; A right boundary of the second lens is less than or equal to a right boundary of the first pixel definition layer of the second pixel.

2. An OLED structure, characterized in that: A series of pixel structures are arranged side by side, wherein the pixel structure has: Anode layer; A pixel definition layer is formed on the anode layer; a first pixel definition layer and a second pixel definition layer are respectively provided on both sides of the anode layer; An OLED is formed on the anode layer, the OLED being located between the first pixel definition layer and the second pixel definition layer; A lens layer formed on the OLED; The right edge of the second lens is equal to or smaller than the right edge of the second pixel definition layer of the second pixel; the left edge of the first lens is smaller than or equal to the left edge of the second pixel definition layer of the first pixel.

3. A method for manufacturing an OLED structure as claimed in claim 1 or 2, characterized in that: The steps include: 1) Fabricating an anode layer on a substrate; 2) making a pixel definition layer on the anode layer; 3) Preparation of OLED film layers and other matching film layers; 4) Making a lens layer.

4. The method for manufacturing an OLED structure according to claim 3, wherein: The above step 1) comprises the following steps: 1-1) depositing an anode layer film on a substrate; 1-2) spin coating a layer of PR glue, followed by exposure, development, and etching to produce a patterned anode layer film.

5. The method for manufacturing an OLED structure according to claim 4, characterized in that: In the above step 1-1), the anode layer film material is one or a combination of Ti, Al, and ITO.

6. The method for manufacturing an OLED structure according to claim 5, characterized in that: The above step 2) comprises the following steps: 2-1) depositing a pixel definition layer; 2-2) spin coating a layer of PR glue, followed by exposure, development, and etching to produce a patterned pixel definition layer.

7. The method for manufacturing an OLED structure according to claim 6, wherein: In the above step 2-1), the material of the pixel definition layer is one or a combination of silicon oxide, silicon nitride, and silicon oxynitride.

8. The method for manufacturing an OLED structure according to claim 7, wherein: The above step 3) includes the following steps: 3-1) evaporating each film layer of the OLED device; 3-2) the planarization layer is formed by making a corresponding PR glue layer, and then exposing and developing it to form a patterned graphic.

9. The method for manufacturing an OLED structure according to claim 8, characterized in that: In the above step 3-1), if the OLED device structure is a single device structure that emits red light, green light or blue light, then there is no need to match the corresponding red filter, green filter, and blue filter; if the OLED device structure is a device structure that emits white light as a whole, then there is a need to match the corresponding red filter, green filter, and blue filter.

10. The method for manufacturing an OLED structure according to claim 9, characterized in that: In the above step 4), a lens layer film is produced, and then exposed and developed to form a patterned graphic; the positions of the lens layer and the pixel definition layer are shifted according to the design by moving the corresponding mask to obtain a relative position graphic.

Images