Temperature compensation type surface acoustic wave resonator and filter

Abstract

The temperature compensation type surface acoustic wave resonator and filter provided by the application comprises a substrate, an interdigital transducer, a reflective grid area, a first load structure, a second load structure, a third load structure and a temperature compensation layer; the first load structure is arranged on the side of the long-finger electrode away from the substrate, and the orthographic projection of the first load structure on the substrate at least partially overlaps the orthographic projection of at least one long-finger electrode on the substrate; the second load structure is arranged on the side of the first load structure away from the long-finger electrode, and the orthographic projection of the second load structure on the substrate at least partially overlaps the orthographic projection of at least one first load structure on the substrate; and the third load structure is arranged on the side of the reflective grid area away from the substrate, and the orthographic projection of the third load structure on the substrate at least partially overlaps the orthographic projection of the reflective grid on the substrate. The application can increase the force of the long-finger electrode and the reflective grid on the substrate, change the propagation speed of the surface acoustic wave, thereby being capable of suppressing the transverse mode spurious wave and improving the Q value of the temperature compensation type surface acoustic wave resonator.

Description

Technical Field

[0001] The present application relates to the technical field of surface acoustic wave resonators, and in particular to a temperature-compensated surface acoustic wave resonator and filter. Background Art

[0002] A surface acoustic wave resonator (SAWR) is a resonant device that utilizes surface acoustic waves (SAW) propagating through a crystal. SAWRs utilize the unique structure and material properties of crystals to create resonance within the crystal. SAWRs are widely used in wireless communications, wireless sensors, electronic devices, and other fields.

[0003] A surface acoustic wave (SAW) filter is a filtering device that utilizes surface acoustic waves propagating through a crystal. By exploiting the unique structure and material properties of the crystal, SAW filters selectively filter surface acoustic waves of specific frequencies. SAW filters are widely used in wireless communications, wireless sensors, radar, electronic equipment, and other fields for tasks such as frequency-selective filtering, signal conditioning, and spectrum shaping.

[0004] In some cases, due to material properties or structural design, filters can generate other unwanted spurious modes, such as transverse modes, while generating the primary mode. The generation of transverse modes can reduce the Q value of the resonator and degrade the filter's insertion loss, thus affecting filter performance. Therefore, care must be taken to suppress the generation of transverse modes during filter design and manufacture to ensure stability and performance. Summary of the Invention

[0005] The present application provides a temperature-compensated surface acoustic wave resonator and filter to solve the problems of increased insertion loss, frequency response distortion, increased bandwidth and cross-coupling that may be caused by transverse parasitic mode noise.

[0006] In a first aspect, the present application provides a temperature-compensated surface acoustic wave resonator, comprising:

[0007] substrate;

[0008] an interdigital transducer disposed on a surface of one side of the substrate along the thickness direction, the interdigital transducer comprising a plurality of long finger electrodes, the long finger electrodes comprising a first long finger electrode and a second long finger electrode arranged crosswise along the second direction; the first long finger electrode and the second long finger electrode both extend along the second direction and are arranged along the first direction;

[0009] a reflective grating region, disposed on a surface of one side of the substrate along the thickness direction and in the same plane as the interdigital transducer; along the first direction, the reflective grating region is disposed on at least one side of the interdigital transducer; the reflective grating region includes a plurality of reflective gratings extending along the second direction;

[0010] at least one first load structure, disposed on a side of the long finger electrode away from the substrate in a thickness direction, wherein an orthographic projection of the first load structure on the substrate at least partially overlaps with an orthographic projection of at least one of the long finger electrodes on the substrate;

[0011] at least one second load structure, disposed on a side of the first load structure away from the long finger electrodes along the thickness direction, wherein an orthographic projection of the second load structure on the substrate at least partially overlaps with an orthographic projection of at least one first load structure on the substrate;

[0012] at least one third load structure, disposed on a side of the reflective grating away from the substrate in a thickness direction, wherein an orthographic projection of the third load structure on the substrate at least partially overlaps with an orthographic projection of the reflective grating on the substrate;

[0013] a temperature compensation layer, disposed on a side of the IDT away from the substrate in a thickness direction;

[0014] The first direction intersects the second direction.

[0015] Preferably, along the second direction, the first long finger electrode includes a first end portion close to the second long finger electrode and a second end portion away from the second long finger electrode;

[0016] An orthographic projection of at least a portion of the first load structure on the substrate overlaps with an orthographic projection of the first end portion on the substrate;

[0017] The second long finger electrode includes a third end portion close to a side of the first long finger electrode and a fourth end portion away from a side of the first long finger electrode;

[0018] At least a portion of an orthographic projection of the first load structure on the substrate overlaps with an orthographic projection of the third end on the substrate.

[0019] Preferably, the interdigital transducer further comprises a bus bar;

[0020] The bus bar includes a first bus bar and a second bus bar arranged opposite to each other along the first direction; the first bus bar and the second bus bar both extend along the second direction;

[0021] The second end of the first long finger electrode is connected to the first bus bar;

[0022] The fourth end portion of the second long finger electrode is connected to the second bus bar.

[0023] Preferably, at least a portion of the orthographic projection of the second load structure on the substrate completely overlaps with the orthographic projection of the first load structure on the substrate.

[0024] Preferably, the dimension of the first load structure along the second direction is a first dimension L, and the value range of the first dimension L is: 0.3λ≤L≤0.9λ, wherein λ is the wavelength of the surface acoustic wave.

[0025] Preferably, the dimension of the second load structure along the second direction is a second dimension N, and the second dimension N and the first dimension L satisfy the following relationship: L<N≤2L.

[0026] Preferably, a size of the first load structure along the first direction is equal to a size of the bus bar along the first direction.

[0027] Preferably, a dimension of the second load structure along the first direction is equal to a dimension of the bus bar along the first direction.

[0028] Preferably, a dimension of the third load structure along the second direction is a third dimension J, and the third dimension J and the first dimension L satisfy the following relationship: L<J≤1.5L.

[0029] Preferably, a dimension of the third load structure along the first direction is a fourth dimension M, and the fourth dimension M is equal to a dimension of the reflective grating region along the first direction.

[0030] Preferably, along the second direction, an edge of the second supporting structure on a side away from the center of the aperture is aligned with an edge of the first supporting structure on a side away from the center of the aperture.

[0031] Preferably, along the second direction, an edge of the third supporting structure on a side away from the center of the aperture is aligned with an edge of the first supporting structure on a side away from the center of the aperture.

[0032] Preferably, the first load structure, the second load structure and the third load structure are all arranged inside the temperature compensation layer along the thickness direction.

[0033] Preferably, at least a portion of the orthographic projection of the second load structure on the substrate overlaps with the orthographic projection of the reflective grating region on the substrate.

[0034] Preferably, along the first direction, an end portion of the second loading structure is aligned with a boundary of the reflective grating region away from the IDT.

[0035] In a second aspect, the present application also provides a temperature-compensated surface acoustic wave filter, comprising the temperature-compensated surface acoustic wave resonator according to any one of the first aspect.

[0036] The temperature-compensated surface acoustic wave resonator and filter provided by the present application comprises a substrate, an interdigital transducer, a reflector region, a first load structure, a second load structure, a third load structure, and a temperature compensation layer; the first load structure is arranged on a side of the long-finger electrode away from the substrate in the thickness direction, and a normal projection of the first load structure on the substrate at least partially overlaps with a normal projection of at least one long-finger electrode on the substrate; the second load structure is arranged on a side of the first load structure away from the long-finger electrode in the thickness direction, and a normal projection of the second load structure on the substrate at least partially overlaps with a normal projection of at least one first load structure on the substrate; and the third load structure is arranged on a side of the reflector region away from the substrate in the thickness direction, and a normal projection of the third load structure on the substrate at least partially overlaps with a normal projection of the reflector on the substrate. By arranging the first load structure and the second load structure, the present application can increase the force of the long-finger electrode on the substrate, and by arranging the third load structure, the present application can increase the force of the reflector on the substrate, thereby changing the propagation speed of the surface acoustic wave, so that the speed of the surface acoustic wave in the region where the first load structure, the second load structure, and the third load structure are arranged is less than the speed of the surface acoustic wave in the region where the first load structure, the second load structure, and the third load structure are not arranged, thereby suppressing the transverse mode spurious wave and improving the Q value of the temperature-compensated surface acoustic wave resonator. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the present application or the prior art, the following will briefly introduce the drawings needed in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0038] Figure 1 is a top view of the temperature-compensated surface acoustic wave resonator provided by Embodiment One of the present application;

[0039] Figure 2 is a top view of the temperature-compensated surface acoustic wave resonator provided by Embodiment Two of the present application;

[0040] Figure 3 is a top view of the temperature-compensated surface acoustic wave resonator provided by Embodiment Three of the present application;

[0041] Figure 4 is a sectional view of the temperature-compensated surface acoustic wave resonator provided by the present application. DETAILED DESCRIPTION

[0042] To make the objectives, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this application.

[0043] The terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, such that the embodiments described herein can be practiced in an order other than that shown or described herein.

[0044] First, as Figures 1 to 4 As shown, an embodiment of the present application provides a temperature-compensated surface acoustic wave resonator, comprising:

[0045] Substrate 1; the substrate 1 is a piezoelectric substrate, and the material used includes lithium niobate or lithium tantalate;

[0046] An interdigital transducer 2 is provided on one side surface of the substrate 1 along the thickness direction. The interdigital transducer 2 includes a plurality of long finger electrodes 21. The long finger electrodes 21 include a first long finger electrode 211 and a second long finger electrode 212 arranged crosswise along a second direction Y. The first long finger electrodes 211 and the second long finger electrodes 212 both extend along the second direction Y and are arranged along the first direction X. The material used for the long finger electrodes 21 includes any one of titanium, chromium, silver, copper, molybdenum, platinum, tungsten, and aluminum, and a combination thereof.

[0047] A reflection grating region 3 is provided on one side surface of the substrate 1 along the thickness direction and is coplanar with the IDT 2. The reflection grating region 3 is provided on at least one side of the IDT 2 along the first direction X. The reflection grating region 3 includes a plurality of reflection gratings 31 extending along the second direction Y. The reflection gratings can be used to reflect surface acoustic waves to prevent surface acoustic wave leakage. Adding the reflection gratings can enhance the selectivity of the filter, expand the bandwidth of the filter, reduce the size of the filter, and improve the stability of the filter.

[0048] At least one first load structure 4 is provided on a side of the long finger electrode 21 away from the substrate 1 in the thickness direction, and the orthographic projection of the first load structure 4 on the substrate 1 at least partially overlaps with the orthographic projection of at least one of the long finger electrodes 21 on the substrate 1; the material used for the first load structure 4 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum, and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of first load structures 4 is two;

[0049] At least one second load structure 5 is provided on a side of the first load structure 4 away from the long finger electrode 21 in the thickness direction, and the orthographic projection of the second load structure 5 on the substrate 1 at least partially overlaps with the orthographic projection of at least one first load structure 4 on the substrate 1; the material used for the second load structure 5 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum, and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of second load structures 5 is two;

[0050] At least one third load structure 6 is provided on a side of the reflective grating 31 away from the substrate 1 in the thickness direction, and the orthographic projection of the third load structure 6 on the substrate 1 at least partially overlaps with the orthographic projection of the reflective grating 31 on the substrate 1; the material of the third load structure 6 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum, and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of third load structures 6 is four;

[0051] A temperature compensation layer 7 is provided on a side of the IDT 2 away from the substrate 1 in the thickness direction. Exemplarily, the temperature compensation layer 7 is made of a dielectric material having a positive temperature coefficient, such as silicon dioxide or silicon nitride. The provision of the temperature compensation layer 7 can prevent temperature changes from affecting the resonant frequency of the temperature-compensated surface acoustic wave resonator, thereby improving the temperature stability and reliability of the resonator.

[0052] The first direction X and the second direction Y intersect.

[0053] In the present application, by providing the first load structure 4 and the second load structure 5, the force exerted by the long finger electrode 21 on the substrate 1 can be increased. By providing the third load structure 6, the force exerted by the reflective grating 31 on the substrate 1 can be increased, thereby changing the propagation speed of the surface acoustic wave, so that the sound speed of the surface acoustic wave in the area where the first load structure 4, the second load structure 5, and the third load structure 6 are provided is lower than the sound speed of the area where the first load structure 4, the second load structure 5, and the third load structure 6 are not provided, thereby suppressing the transverse mode noise and improving the Q value of the temperature-compensated surface acoustic wave resonator.

[0054] Preferably, along the second direction Y, the first long finger electrode 211 includes a first end proximal to the second long finger electrode 212 and a second end distal to the second long finger electrode 212; at least a portion of the orthographic projection of the first load structure 4 on the substrate 1 overlaps with the orthographic projection of the first end on the substrate 1; the second long finger electrode 212 includes a third end proximal to the first long finger electrode 211 and a fourth end distal to the first long finger electrode 211; and at least a portion of the orthographic projection of the first load structure 4 on the substrate 1 overlaps with the orthographic projection of the third end on the substrate 1. By providing the first load structure 4, the propagation velocity of surface acoustic waves can be changed, such that the velocity of surface acoustic waves in the area where the first load structure 4 is provided is less than the velocity of surface acoustic waves in the area where the first load structure 4 is provided. This can suppress transverse mode noise, reduce surface acoustic wave leakage and energy loss, and improve the Q value of the temperature-compensated surface acoustic wave resonator.

[0055] Preferably, the IDT 2 further includes bus bars 22; the bus bars 22 include a first bus bar 221 and a second bus bar 222 arranged opposite each other along the first direction X; the first bus bar 221 and the second bus bar 222 both extend along the second direction Y; the second ends of the first long finger electrodes 211 are connected to the first bus bar 221; and the fourth ends of the second long finger electrodes 212 are connected to the second bus bar 222. The bus bars 22 are capable of receiving AC signals. When an AC signal of a certain frequency is applied to the bus bars 22, a surface acoustic wave can be generated in the temperature-compensated surface acoustic wave resonator.

[0056] Preferably, at least a portion of the orthographic projection of the second load structure 5 on the substrate 1 completely overlaps with the orthographic projection of the first load structure 4 on the substrate 1. The provision of the second load structure 5 can further alter the propagation velocity of surface acoustic waves, such that the velocity of surface acoustic waves in an area where both the second load structure 5 and the first load structure 4 are provided is lower than the velocity of surface acoustic waves in an area where only the first load structure 4 is provided but not the second load structure 5. This, in turn, can suppress transverse mode clutter, reduce surface acoustic wave leakage and energy loss, and improve the Q value of the temperature-compensated surface acoustic wave resonator.

[0057] Preferably, the first load structure 4 has a first dimension L along the second direction Y. The first dimension L is within the range of 0.3λ≤L≤0.9λ, where λ is the wavelength of the surface acoustic wave. This design increases the design freedom of the surface acoustic wave resonator and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0058] Preferably, the second load structure 5 has a second dimension N along the second direction Y, and the second dimension N satisfies the following relationship with the first dimension L: L < N ≤ 2L. This design increases the design freedom of the surface acoustic wave resonator and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0059] Preferably, the dimension of the first load structure 4 along the first direction X is equal to the dimension of the bus bar 22 along the first direction X. This simplifies the configuration, facilitates design and maintenance, and further enhances the suppression of transverse mode noise by the temperature-compensated surface acoustic wave resonator.

[0060] Preferably, the size of the second load structure 5 along the first direction X is equal to the size of the busbar 22 along the first direction X. This simplifies the arrangement, making it easier to design and maintain, and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0061] Preferably, the dimension of the third load structure 6 along the second direction Y is a third dimension J, and the third dimension J satisfies the following relationship with the first dimension L: L < J ≤ 1.5L. This design not only increases the design freedom of the surface acoustic wave resonator, but also further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0062] Preferably, the dimension of the third load structure 6 along the first direction X is a fourth dimension M, and the fourth dimension M is equal to the dimension of the reflective grating region 3 along the first direction X. This simplifies the configuration, facilitates design and maintenance, and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0063] The values ​​of the first dimension L, the second dimension N, the third dimension J, and the fourth dimension M are different, and the sound velocity differences in different regions are different. The optimal values ​​of the above dimensions can be obtained by an optimal parameter optimization algorithm, so that the sound velocity differences in different regions are all matched to the optimal values, thereby enhancing the suppression effect of the temperature-compensated surface acoustic wave resonator on transverse mode clutter. Exemplarily, the optimal parameter optimization algorithm can adopt the Newton method, which is an optimization algorithm based on second-order derivatives and can be used for parameter optimization control. It continuously adjusts the parameters by calculating the second-order derivative of the objective function so that the objective function converges to the minimum value; or adopt the quasi-Newton method, which is an optimization algorithm based on the quasi-Newton matrix and can be used for parameter optimization control. It continuously adjusts the parameters by calculating the quasi-Newton matrix so that the objective function converges to the minimum value.

[0064] Preferably, along the second direction Y, the edge of the second load structure 5 on the side away from the aperture center is aligned with the edge of the first load structure 4 on the side away from the aperture center. This simplifies the arrangement, facilitating design and maintenance, and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0065] Preferably, along the second direction Y, the edge of the third load structure 6 on the side away from the aperture center is aligned with the edge of the first load structure 4 on the side away from the aperture center. This simplifies the arrangement, facilitating design and maintenance, and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0066] Preferably, the first load structure 4, the second load structure 5 and the third load structure 6 are all arranged inside the temperature compensation layer 7 along the thickness direction. Such a design can further enhance the suppression effect of the temperature compensated surface acoustic wave resonator on transverse mode noise.

[0067] Preferably, at least a portion of the orthographic projection of the second load structure 5 on the substrate 1 overlaps with the orthographic projection of the reflective grating region 3 on the substrate 1. Such a design can further enhance the suppression effect of the temperature-compensated surface acoustic wave resonator on transverse mode noise. Figure 2 As shown, in the second embodiment, the orthographic projection of the second load structure 5 on the substrate 1 overlaps with a portion of the orthographic projection of the reflective grating region 3 on the substrate 1. Figure 3 As shown, in the third embodiment, the orthographic projection of the second load structure 5 on the substrate 1 overlaps with the entire orthographic projection of the reflective grating region 3 on the substrate 1 .

[0068] Preferably, along the first direction X, the end of the second load structure 5 is aligned with the boundary of the reflective grating region 3 away from the interdigital transducer 2. This simplifies the arrangement, making it easy to design and maintain, and further enhances the temperature-compensated surface acoustic wave resonator's ability to suppress transverse mode noise.

[0069] In a second aspect, based on the same inventive concept, an embodiment of the present application further provides a temperature-compensated surface acoustic wave filter, comprising the temperature-compensated surface acoustic wave resonator described in any embodiment of the first aspect.

[0070] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A temperature-compensated surface acoustic wave resonator, characterized in that: include: substrate (1); An interdigital transducer (2) is provided on a side surface of the substrate (1) along the thickness direction, the interdigital transducer (2) comprising a plurality of long finger electrodes (21), the long finger electrodes (21) comprising a first long finger electrode (211) and a second long finger electrode (212) arranged crosswise along a second direction (Y); the first long finger electrode (211) and the second long finger electrode (212) both extend along the second direction (Y) and are arranged along the first direction (X); A reflection grating region (3) is provided on a surface of one side of the substrate (1) along the thickness direction and is in the same plane as the interdigital transducer (2); along the first direction (X), the reflection grating region (3) is provided on at least one side of the interdigital transducer (2); the reflection grating region (3) includes a plurality of reflection gratings (31) extending along the second direction (Y); At least one first load structure (4) is arranged on a side of the long finger electrode (21) away from the substrate (1) in the thickness direction, and an orthographic projection of the first load structure (4) on the substrate (1) at least partially overlaps with an orthographic projection of at least one of the long finger electrodes (21) on the substrate (1); at least one second load structure (5) disposed on a side of the first load structure (4) away from the long finger electrode (21) in the thickness direction, and an orthographic projection of the second load structure (5) on the substrate (1) at least partially overlaps with an orthographic projection of at least one first load structure (4) on the substrate (1); At least one third load structure (6) is arranged on a side of the reflective grating (31) away from the substrate (1) in the thickness direction, and the orthographic projection of the third load structure (6) on the substrate (1) at least partially overlaps with the orthographic projection of the reflective grating (31) on the substrate (1); a temperature compensation layer (7), arranged on a side of the interdigital transducer (2) away from the substrate (1) in a thickness direction; The first direction (X) intersects the second direction (Y).

2. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein Along the second direction (Y), the first long finger electrode (211) comprises a first end portion close to the second long finger electrode (212) and a second end portion away from the second long finger electrode (212); The orthographic projection of at least part of the first load structure (4) on the substrate (1) overlaps with the orthographic projection of the first end portion on the substrate (1); The second long finger electrode (212) comprises a third end portion close to a side of the first long finger electrode (211) and a fourth end portion away from a side of the first long finger electrode (211); The orthographic projection of at least part of the first load structure (4) on the substrate (1) overlaps with the orthographic projection of the third end on the substrate (1).

3. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein The interdigital transducer (2) further includes a bus bar (22); The bus bar (22) comprises a first bus bar (221) and a second bus bar (222) arranged opposite to each other along the first direction (X); the first bus bar (221) and the second bus bar (222) both extend along the second direction (Y); The second end of the first long finger electrode (211) is connected to the first bus bar (221); The fourth end of the second long finger electrode (212) is connected to the second bus bar (222).

4. The temperature-compensated surface acoustic wave resonator according to claim 2, wherein: At least a portion of the orthographic projection of the second load structure (5) on the substrate (1) completely overlaps with the orthographic projection of the first load structure (4) on the substrate (1).

5. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein The dimension of the first load structure (4) along the second direction (Y) is a first dimension L, and the value range of the first dimension L is: 0.3λ≤L≤0.9λ, wherein λ is the wavelength of the surface acoustic wave.

6. The temperature-compensated surface acoustic wave resonator according to claim 5, wherein: The dimension of the second load structure (5) along the second direction (Y) is a second dimension N, and the second dimension N and the first dimension L satisfy the following relationship: L<N≤2L.

7. The temperature-compensated surface acoustic wave resonator according to claim 3, wherein: The size of the first load structure (4) along the first direction (X) is equal to the size of the bus bar (22) along the first direction (X).

8. The temperature-compensated surface acoustic wave resonator according to claim 3, wherein: The size of the second load structure (5) along the first direction (X) is equal to the size of the bus bar (22) along the first direction (X).

9. The temperature-compensated surface acoustic wave resonator according to claim 6, wherein: The dimension of the third load structure (6) along the second direction (Y) is a third dimension J, and the third dimension J and the first dimension L satisfy the following relationship: L<J≤1.5L.

10. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein The dimension of the third load structure (6) along the first direction (X) is a fourth dimension M, and the fourth dimension M is equal to the dimension of the reflective grating area (3) along the first direction (X).

11. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein Along the second direction (Y), the edge of the second supporting structure (5) on the side away from the center of the aperture is aligned with the edge of the first supporting structure (4) on the side away from the center of the aperture.

12. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein Along the second direction (Y), the edge of the third supporting structure (6) away from the center of the aperture is aligned with the edge of the first supporting structure (4) away from the center of the aperture.

13. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein The first load structure (4), the second load structure (5) and the third load structure (6) are all arranged inside the temperature compensation layer (7) along the thickness direction.

14. The temperature-compensated surface acoustic wave resonator according to claim 1, wherein At least a portion of the orthographic projection of the second load structure (5) on the substrate (1) overlaps with the orthographic projection of the reflective grating region (3) on the substrate (1).

15. The temperature-compensated surface acoustic wave resonator according to claim 14, wherein: Along the first direction (X), the end of the second load structure (5) is aligned with a boundary of the reflection grating region (3) away from the interdigital transducer (2).

16. A temperature-compensated surface acoustic wave filter, characterized in that: The temperature-compensated surface acoustic wave resonator comprises the temperature-compensated surface acoustic wave resonator according to any one of claims 1 to 15.

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