Radiation detection panel, preparation method thereof and radiation detector

Abstract

The invention provides a radiation detection panel, a preparation method thereof and a radiation detector, and relates to the technical field of high-energy ray detection. The radiation detection panel comprises a detection substrate and a scintillator layer located on one side of the detection substrate. The scintillator layer is provided with scintillator units arranged in an array; the scintillator unit comprises at least two layers of stacked scintillator subunits; in any two adjacent layers of scintillator subunits, the conversion rate of the scintillator subunit close to one side of the detection substrate to the radiation is greater than the conversion rate of the scintillator subunit far away from one side of the detection substrate to the radiation; and the tolerance of the scintillator subunits close to one side of the detection substrate to the radiation rays is smaller than the tolerance of the scintillator subunits far away from one side of the detection substrate to the radiation rays. According to the radiation detection panel provided by the invention, a low-dose radiation source can be adopted, and high-resolution radiation imaging can be obtained.

Description

Technical Field

[0001] The present disclosure relates to the technical field of high-energy ray detection, and in particular to a radiation detection panel and a preparation method thereof, and a radiation detector. Background Art

[0002] At present, X-ray flat panel detectors (FPXD) are widely used in medical diagnosis, industrial non-destructive testing, public security and other fields. With the continuous advancement of science and technology and the improvement of people's health awareness, FPXD detectors are developing towards low radiation dose and high resolution imaging mode. However, the defects of scintillator materials in use limit their use in the medical field.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0004] The purpose of the present disclosure is to overcome the above-mentioned deficiencies of the prior art and to provide a radiation detection panel and a method for preparing the same, and a radiation detector, so as to improve the performance of the radiation detection panel by means of a scintillator layer having a composite scintillator.

[0005] According to one aspect of the present disclosure, there is provided a radiation detection panel, comprising a detection substrate, and a scintillator layer located on one side of the detection substrate;

[0006] The detection substrate has detection units arranged in an array; the scintillator layer has scintillator units arranged in an array, and the scintillator units are arranged corresponding to one or more detection units;

[0007] The scintillator unit comprises at least two stacked scintillator subunits;

[0008] In any two adjacent layers of scintillator subunits, the luminous efficiency of the scintillator subunit close to the detection substrate is greater than the luminous efficiency of the scintillator subunit far from the detection substrate, and the tolerance of the scintillator subunit close to the detection substrate is less than the tolerance of the scintillator subunit to radiation far from the detection substrate.

[0009] In an exemplary embodiment of the present disclosure, the scintillator unit at least includes a second scintillator subunit on a side close to the detection substrate and a first scintillator subunit on a side farthest from the detection substrate.

[0010] In an exemplary embodiment of the present disclosure, the scintillator layer further includes a reflective layer, the reflective layer having a back surface facing the detection substrate and a front surface facing away from the detection substrate;

[0011] The reflective layer is provided with a plurality of grooves corresponding to the scintillator units one by one, and the grooves are opened at the back surface;

[0012] The first scintillator subunit is located in the corresponding groove.

[0013] In an exemplary embodiment of the present disclosure, the aspect ratio of the groove is between 5 and 10.

[0014] In an exemplary embodiment of the present disclosure, at least a portion of the second scintillator subunit is located in the groove.

[0015] In an exemplary embodiment of the present disclosure, the second scintillator subunit includes a regular crystal layer close to the detection substrate and an irregular crystal layer away from the detection substrate;

[0016] The irregular crystal layer is at least partially located in the groove.

[0017] In an exemplary embodiment of the present disclosure, the second scintillator subunit includes a regular crystal layer close to the detection substrate and an irregular crystal layer away from the detection substrate;

[0018] The irregular crystal layer is located in the groove, and at least a portion of the regular crystal layer is located in the groove.

[0019] In an exemplary embodiment of the present disclosure, the orthographic projection of the first scintillator subunit on the detection substrate is located within the range of the orthographic projection of the regular crystal layer on the detection substrate.

[0020] In an exemplary embodiment of the present disclosure, the groove includes a first space and a second space, and the second space is located on a side of the first space close to the opening of the groove;

[0021] The first space of the groove is filled with the first scintillator sub-unit; the second space is filled with the second scintillator sub-unit;

[0022] The depth of the second space is between 100 and 200 microns.

[0023] In an exemplary embodiment of the present disclosure, a transparent protective layer is further included, and the transparent protective layer at least covers the scintillator layer.

[0024] In an exemplary embodiment of the present disclosure, the first scintillator subunit is a gadolinium oxysulfide subunit, and the second scintillator subunit is a cesium iodide subunit.

[0025] According to another aspect of the present disclosure, a radiation detector is provided, comprising the above-mentioned radiation detection panel.

[0026] According to another aspect of the present disclosure, there is provided a method for preparing a radiation detection panel, comprising preparing a scintillator layer located on one side of a detection substrate, the scintillator layer having scintillator units arranged in an array;

[0027] The preparation of the scintillator layer comprises:

[0028] At least two scintillator sublayers are formed in sequence on the substrate layer, and each scintillator sublayer contains scintillator subunits corresponding to each scintillator unit; wherein, in any two adjacent layers of scintillator subunits, the luminous efficiency of the scintillator subunits close to the detection substrate side is greater than the luminous efficiency of the scintillator subunits far from the detection substrate side, and the tolerance of the scintillator subunits close to the detection substrate side to radiation is less than the tolerance of the scintillator subunits far from the detection substrate side to radiation.

[0029] In an exemplary embodiment of the present disclosure, the substrate layer is a reflective layer; the reflective layer has a back surface facing the detection substrate and a front surface facing away from the detection substrate;

[0030] The preparation method further comprises:

[0031] A plurality of grooves are formed on the back side of the reflective layer, and the plurality of grooves correspond to the plurality of scintillator units one by one; the grooves open on the back side;

[0032] The step of sequentially forming at least two scintillator sub-layers on the substrate layer comprises:

[0033] forming a first scintillator sub-layer, wherein the first scintillator sub-layer comprises a first scintillator sub-unit of each scintillator unit, and the first scintillator sub-unit of each scintillator unit is located in a corresponding groove;

[0034] A second scintillator sub-layer is formed, the second scintillator sub-layer including second scintillator sub-units of the respective scintillator units.

[0035] In an exemplary embodiment of the present disclosure, the second scintillator subunit includes an irregular crystal layer and a regular crystal layer; the groove includes a first space and a second space, and the second space is located on a side of the first space close to the groove opening;

[0036] The forming of the first scintillator sublayer comprises:

[0037] forming a corresponding first scintillator subunit in the first space of each of the grooves;

[0038] Forming the second scintillator sublayer includes:

[0039] The second scintillator sub-layer covering the first scintillator sub-layer is formed so that the irregular crystal layer of the second scintillator sub-unit is at least partially located in the second space of the groove.

[0040] In an exemplary embodiment of the present disclosure, the second scintillator subunit includes an irregular crystal layer and a regular crystal layer; the groove includes a first space and a second space, and the second space is located on a side of the first space close to the groove opening;

[0041] The forming of the first scintillator sub-layer comprises:

[0042] forming a corresponding first scintillator subunit in the first space of each of the grooves;

[0043] Forming the second scintillator sublayer includes:

[0044] The second scintillator sublayer is formed to cover the first scintillator sublayer so that the irregular crystal layer of the second scintillator subunit is located in the second space of the groove and the regular crystal layer of the second scintillator subunit is at least partially located in the second space.

[0045] In an exemplary embodiment of the present disclosure, the preparation method further includes: forming a transparent protective layer that at least covers the scintillator layer.

[0046] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0048] Figure 1-1 This is a schematic cross-sectional view of a radiation detection panel in one embodiment of the present disclosure.

[0049] Figure 1-2 In one embodiment of the present disclosure, a top view of a detection substrate is shown.

[0050] Figure 2 This is a schematic cross-sectional view of a detection substrate in one embodiment of the present disclosure.

[0051] Figure 3 This is a top view of a scintillator layer in one embodiment of the present disclosure.

[0052] Figure 4It is a schematic cross-sectional diagram of a scintillator layer in one embodiment of the present disclosure.

[0053] Figure 5 This is a schematic diagram of a groove structure of a scintillator layer in one embodiment of the present disclosure.

[0054] Figure 6 It is a schematic cross-sectional diagram of a scintillator layer in one embodiment of the present disclosure.

[0055] Figure 7 This is a schematic cross-sectional view of a radiation detection panel in one embodiment of the present disclosure.

[0056] Figure 8 The figure is a schematic flow chart of a method for preparing a scintillator layer in one embodiment of the present disclosure.

[0057] The reference numerals are as follows:

[0058] 10. scintillator substrate; REL, reflective layer; 100. scintillator unit; SCU, scintillator subunit; SCU1, first scintillator subunit; SCU2, second scintillator subunit; RL, regular crystal layer; IRL, irregular crystal layer; IND, groove; IND1, first space; IND2, second space; 20. detection substrate; 200, detection unit; RP, back plate; AA, detection area; BB, peripheral area; TFT, thin film transistor; GT, gate layer; GI, gate insulating layer; SCL1, first semiconductor layer; ACT, active layer; SD, source and drain metal layer; CL1, first conductive layer; CL2, second conductive layer; SCL2, second semiconductor layer; IL1, first insulating layer; IL2, second insulating layer; PLN, planarization layer; TRL, transparent protective layer. DETAILED DESCRIPTION

[0059] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present disclosure will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0060] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may exist in addition to the listed elements / components / etc.; the terms "first", "second", etc. are used merely as labels and are not intended to limit the quantity of their objects.

[0061] The term "luminous efficiency of a scintillator subunit" means that the luminous efficiency of a scintillator refers to the ratio of the average energy of photons emitted by the scintillator after the scintillator absorbs the energy of high-energy radiation to the energy of the absorbed high-energy radiation. For the same high-energy radiation (such as X-rays), different scintillator materials have different luminous efficiencies. For example, if the energy of X-rays absorbed by the scintillator material is a and the average energy of the emitted visible light is b, then the luminous efficiency of the scintillator material is a / b.

[0062] The term "radiation tolerance" refers to the property of scintillator materials to maintain stable performance for a long time under irradiation with high-energy radiation.

[0063] The present disclosure provides a radiation detector, which can be used for detecting high-energy rays, especially X-rays. For example, it can be used in medical X-ray imaging detection equipment, or in industrial product quality inspection X-ray imaging equipment to detect whether the product is qualified.

[0064] In one example, the radiation detector includes a radiation detection panel; see Figure 1-1 The radiation detection panel includes a scintillator layer 10 and a detection substrate 20. The scintillator layer 10 includes scintillator units 100 arranged in an array. When used, X-rays (as a kind of radiation) pass through the detection target and are converted into visible light by the scintillator layer 10. The visible light is transmitted to the detection substrate 20. The detection substrate 20 converts the visible light signal into an electrical signal and processes the electrical signal to obtain the required image information.

[0065] In one embodiment of the present disclosure, Figure 1-2 As shown, the detection substrate 20 includes detection units 200 arranged in an array, and the detection units 200 are used to convert visible light signals into electrical signals. Figure 2 As shown, the detection substrate 20 includes a back plate RP, a photodiode and a thin film transistor TFT arranged on the back plate RP, and a planarization layer PLN covering the photodiode and the thin film transistor TFT. The thin film transistor TFT can be a top-gate thin film transistor, a bottom-gate thin film transistor or a double-gate thin film transistor, whichever can effectively control the transistor.

[0066] In one example, the thin film transistor TFT is a metal oxide thin film transistor, which can reduce leakage of the control circuit and improve the accuracy of the detection result.

[0067] Optionally, the detection unit 200 may include a photodiode and a control circuit, wherein the control circuit includes one or more thin film transistors TFT. The scintillator unit 100 may be arranged in a one-to-one correspondence with the photodiode, or one scintillator unit 100 may be arranged in a corresponding correspondence with a plurality of photodiodes, so that the visible light generated by the scintillator unit 100 may be irradiated to the corresponding photodiode. Furthermore, the visible light generated by the scintillator unit 100 is only irradiated to the corresponding photodiode and not to other photodiodes, so that the radiation detection panel has high resolution and high contrast.

[0068] In one example, if Figure 2 As shown, the detection substrate 20 includes a gate layer GT, a gate insulating layer GI, a first semiconductor layer SCL1, a source-drain metal layer SD, a first insulating layer IL1, a first conductive layer CL1, a second semiconductor layer SCL2, a second conductive layer CL2, a second insulating layer IL2 and a planarization layer PLN which are sequentially stacked on one side of the back plate RP. Among them, the gate layer GT, the gate insulating layer GI, the first semiconductor layer SCL1 and the source-drain metal layer SD form a thin film transistor TFT. Among them, the first semiconductor layer SCL1 forms an active layer ACT of the thin film transistor TFT, and the active layer ACT includes a source contact area, a conductive channel area and a drain contact area connected in sequence; the gate layer GT forms a gate of the thin film transistor TFT; the source-drain metal layer SD forms a source and a drain of the thin film transistor TFT, and the source and the drain are overlapped with the source contact area and the drain contact area respectively. The first insulating layer IL1 is used to protect the active layer ACT and the source and the drain of the thin film transistor TFT. The first conductive layer CL1, the second semiconductor layer SCL2, and the second conductive layer CL2 form a photodiode. Among them, the first conductive layer CL1 can form a first electrode and an electrode lead of a photodiode, and the electrode lead is used to electrically connect the drain of the thin film transistor TFT and the first electrode of the photodiode. The second conductive layer CL2 forms a second electrode of the photodiode, and the second electrode is used to load a bias voltage or a driving voltage to the photodiode. The second insulating layer IL2 is used to protect the thin film transistor TFT and the photodiode, and the flattening layer PLN is used to flatten the structure of the thin film transistor TFT and the photodiode, and to facilitate the alignment and connection of the detection substrate 20 with the scintillator layer 10. The scintillator layer 10 is used to convert the projected X-ray into visible light, and the photodiode converts the optical signal into an electrical signal after receiving the visible light; under the control of the control circuit corresponding to the photodiode, each electrical signal can be read directly or indirectly to determine the intensity of the visible light. For example, the photodiode forms a stored charge on the capacitor of the photodiode itself according to the intensity of the visible light, and the amount of stored charge of each photodiode is proportional to the intensity of the incident X-ray. Under the action of the control circuit formed by the thin film transistor TFT, the stored charge of each photodiode can be scanned and read out to obtain an electrical signal.

[0069] Optionally, a light shielding layer may be provided on the side of the first insulating layer IL1 away from the back plate RP, and the light shielding layer may be provided with a plurality of light shielding portions corresponding to the detection unit 200. The light shielding portions may block light from irradiating the conductive channel region of the thin film transistor. In this way, the light shielding portions may prevent light (natural light and visible light converted by the scintillator layer 10, etc.) from irradiating the conductive channel region and affecting the semiconductor properties of the conductive channel region, thereby avoiding the influence of light on the performance of the thin film transistor and improving the stability of the scintillator panel.

[0070] Understandably, Figure 2 The structure of the detection substrate 20 shown is only an example of the detection substrate 20. In other embodiments of the present disclosure, the detection substrate 20 may also adopt other structures.

[0071] In one example, if Figure 1-2 As shown, the detection substrate 20 has a detection area AA and a peripheral area BB arranged on at least one side of the detection area AA, and the peripheral area BB has a binding area; a pin is arranged in the binding area so as to be bound and connected with an external circuit. A detection unit 200 is arranged in the detection area AA, and the signal detected by the detection unit 200 can be transmitted to the peripheral area BB. The peripheral area BB is also provided with a bending area and a chip area (IC area), and a control chip is bound to the chip area. The control chip in the chip area can control each detection unit 200 in the detection area AA, and the signal generated by each detection unit 200 is transmitted to the external circuit through the pins in the binding area. The detection substrate 20 can be bent in the bending area so that the external circuit can be bent to the back of the detection substrate 20, reducing the frame of the radiation detection panel. Further, the backplane RP of the detection substrate 20 is a flexible substrate substrate, and the detection substrate 20 is a flexible substrate.

[0072] exist Figure 1-2 In the example, the electrical signal generated by the detection unit 200 can be transmitted to the analog-to-digital conversion unit and converted into a digital signal, which can be further processed by image processing to form a digital image of the X-ray.

[0073] exist Figure 1-2 In the example of FIG, the detection substrate 20 adopts COP (chip on Panel) technology. It is understandable that the detection substrate 20 may also adopt other technologies to reduce the frame, such as COF (chip on film) technology to reduce the frame.

[0074] In one embodiment of the present disclosure, Figure 3 As shown, the scintillator layer 10 includes scintillator units 100 arranged in an array, and the scintillator units 100 are arranged corresponding to the detection units 200 on the detection substrate 20. In one example, Figure 1-1 As shown, the scintillator unit 100 is arranged in one-to-one correspondence with the detection unit 200; the orthographic projection of the scintillator unit 100 on the back plate RP is located within the range of the orthographic projection of the detection unit 200 on the back plate RP; in particular, the orthographic projection of the scintillator unit 100 on the back plate RP is located within the orthographic projection of the photodiode on the back plate RP. In another example, one scintillator unit 100 can be arranged in correspondence with multiple detection units 200, so that the visible light signal output by one scintillator unit 100 can be processed by multiple detection units, thereby improving the resolution of the final imaging. Each of the scintillator units 100 includes a scintillator material layer, which can emit visible light after absorbing radiation (such as X-rays), and the intensity of the emitted visible light is proportional to the absorbed radiation. In this way, after the radiation passes through the detection target, it is irradiated to the scintillator layer 10; the scintillator material in each scintillator unit 100 can emit visible light of corresponding intensity according to the intensity of the irradiated radiation. The intensity of the visible light emitted by each scintillator unit 100 can be processed to form a digital image, and then used for related detection in the fields of medicine, industry, scientific research, etc.

[0075] In the related art, the scintillator materials commonly used in the scintillator unit 100 include cesium iodide (CsI), sodium iodide (NAI), gadolinium oxysulfide (GSO) or lutetium yttrium silicate (LYSO), etc. The detector prepared with gadolinium oxysulfide as the scintillator material has fast imaging speed, low afterglow, stable performance, simple manufacturing process and low cost, but gadolinium oxysulfide has low luminescence efficiency and low light conversion rate for high-energy rays, which makes the corresponding detector have low luminescence intensity and resolution. In order to improve the luminescence intensity and resolution, it is necessary to increase the radiation dose, which increases the damage to the user or operator's body. The scintillator unit prepared with sodium iodide has high luminescence efficiency, good thermal stability and strong temperature adaptability, but sodium iodide is easily damaged by radiation, and the scintillation performance is reduced under long-term irradiation, which reduces the performance and service life of the radiation detector. Cesium iodide has a stronger ability to convert X-rays into visible light than gadolinium oxysulfide and has a high light conversion rate. At the same time, cesium iodide can also be processed into a crystal columnar structure, which can further improve the ability to capture X-rays and reduce the scattering of visible light converted from X-rays, so that the luminous intensity and resolution of the detector prepared using cesium iodide as the scintillator material are higher. However, the cost of cesium iodide scintillator material is relatively high, and it is easily destroyed by X-rays, and its stability is not as good as that of gadolinium oxysulfide. The scintillator unit prepared from yttrium lutetium silicate has good light output, short decay time, and basically no afterglow, but the cost of yttrium lutetium silicate material is high, and the growth of yttrium lutetium silicate crystals is slow, which further increases the cost. In this way, it is difficult for the above-mentioned scintillator materials to achieve high light output, low afterglow, and stable performance under high-energy ray irradiation while meeting the requirements of simple process and low cost when used alone.

[0076] To solve the above problems, Figure 1-1 , Figure 3 and Figure 4 As shown, in the radiation detection panel provided by the embodiment of the present disclosure, the scintillator layer 10 includes scintillator units 100 arranged in an array, and the scintillator unit 100 includes at least two layers of stacked scintillator subunits SCU. In any two adjacent layers of scintillator subunits SCU, the luminous efficiency of the scintillator subunit SCU close to the detection substrate 20 is greater than the luminous efficiency of the scintillator subunit SCU far from the detection substrate 20, and the tolerance of the scintillator subunit SCU close to the detection substrate 20 to radiation is less than the tolerance of the scintillator subunit SCU far from the detection substrate 20.

[0077] like Figure 1-1 As shown, after the radiation passes through the detection target, it can be irradiated on the scintillator layer 10 and pass through each stacked scintillator subunit SCU in sequence. The radiation passes in the order of the scintillator subunit SCU farthest from the detection substrate 20 to the scintillator subunit SCU closest to the detection substrate 20. During the transmission process, the scintillator material of each scintillator subunit SCU absorbs part of the radiation and converts the absorbed radiation into visible light. In this way, the radiation intensity received by the scintillator material gradually decreases from the scintillator subunit SCU farthest from the detection substrate 20 to the scintillator subunit SCU closest to the detection substrate 20.

[0078] In the radiation detection panel provided in the present embodiment, the farther the scintillator subunit SCU in the scintillator unit 100 is from the detection substrate 20, the better the tolerance of the corresponding scintillator material to radiation is, thereby preventing the scintillator material far away from the detection substrate 20 from being easily damaged after being irradiated, which affects the performance and service life of the radiation detection panel. At the same time, in order to avoid reducing the light conversion rate of radiation by only using scintillator materials with good radiation tolerance, the scintillator subunit SCU close to the detection substrate can use a material with high light conversion rate but low radiation tolerance. In this way, through the cooperation of multiple layers of scintillator subunits SCU, the stability of the radiation detection panel is improved, and the resolution is improved, low-dose radiation and high-resolution radiation imaging can be achieved, and the application scenarios of the radiation detection panel are expanded.

[0079] The disclosed embodiment also provides a method for preparing the above-mentioned radiation detection panel, the method comprising preparing a scintillator layer 10 located on one side of a detection substrate 20, the scintillator layer 10 having scintillator units 100 arranged in an array; the method comprising: sequentially forming at least two layers of scintillator sublayers on the substrate layer, each scintillator sublayer comprising scintillator subunits SCU corresponding to each scintillator unit 100. Among them, in any two adjacent layers of scintillator subunits SCU, the luminous efficiency (light conversion rate to radiation) of the scintillator subunit SCU close to the detection substrate 20 is greater than the luminous efficiency (light conversion rate to radiation) of the scintillator subunit SCU far from the detection substrate 20, and the tolerance of the scintillator subunit SCU close to the detection substrate 20 to radiation is less than the tolerance of the scintillator subunit SCU far from the detection substrate 20 to radiation.

[0080] In one embodiment of the present disclosure, the scintillator unit at least includes a second scintillator subunit SCU2 close to the detection substrate 20 and a first scintillator subunit SCU1 farthest from the detection substrate 20 .

[0081] In one example, the scintillator unit 100 includes a first scintillator subunit SCU1 and a second scintillator subunit SCU2. Exemplarily, the first scintillator subunit SCU1 is a gadolinium oxysulfide subunit, and the second scintillator subunit SCU2 is a cesium iodide subunit. The material of the gadolinium oxysulfide subunit contains gadolinium oxysulfide, for example, the gadolinium oxysulfide subunit is a gadolinium oxysulfide scintillator. The material of the cesium iodide subunit contains cesium iodide. For example, the cesium iodide subunit is a cesium iodide scintillator. Radiation is first irradiated to the gadolinium oxysulfide subunit, and the gadolinium oxysulfide subunit receives part of the radiation and converts the received radiation into visible light. The radiation intensity is reduced after passing through the gadolinium oxysulfide subunit, and the radiation with reduced intensity is transmitted to the cesium iodide subunit. In this way, the radiation is first reduced by the gadolinium oxysulfide subunit before irradiating the cesium iodide subunit, which reduces the radiation intensity irradiated to the cesium iodide subunit, thereby reducing the damage of the radiation to the cesium iodide subunit and improving the stability of the cesium iodide subunit. The cesium iodide scintillator has a high light conversion rate for radiation, and the cesium iodide subunit can more efficiently convert the transmitted radiation source into visible light, thereby improving the conversion efficiency of the scintillator unit 100 for radiation. In this way, on the one hand, the gadolinium oxysulfide subunit is arranged on the side away from the detection substrate 20, which can avoid the radiation source from directly acting on the cesium iodide subunit and improve the stability of the cesium iodide subunit. On the other hand, by arranging the cesium iodide subunit on the side of the gadolinium oxysulfide subunit close to the detection substrate 20, part of the radiation source can be converted by the cesium iodide scintillator, thereby improving the conversion efficiency of the radiation source and thus improving the visible light emission intensity of the scintillator layer 10.

[0082] In this way, by adopting gadolinium oxysulfide subunits and cesium iodide subunits to form a composite scintillator unit 100, the problems of low resolution and low sensitivity when only gadolinium oxysulfide is used as the scintillator material are solved, and the problems of high afterglow and low radiation resistance when only cesium iodide is used as the scintillator material are also solved, so that the scintillator unit 100 has the advantages of high light yield, high resolution, high quantum efficiency, high radiation resistance, low attenuation life and low afterglow.

[0083] In some other examples, the first scintillator subunit SCU1 and the second scintillator subunit SCU2 may also adopt a combination of other scintillator materials.

[0084] In some other embodiments of the present disclosure, other scintillator subunits may also be included, which are located on the side of the second scintillator subunit SCU2 away from the first scintillator subunit SCU1, for example, a third scintillator subunit SCU3 and a fourth scintillator subunit SCU4, etc., which are located between the second scintillator subunit SCU2 and the detection substrate.

[0085] In one embodiment of the present disclosure, Figure 4 As shown, the radiation detection panel further includes a reflective layer REL, and the reflective layer REL has a back side facing the detection substrate 20 and a front side facing away from the detection substrate 20. The back side of the reflective layer REL has a plurality of grooves IND corresponding to the plurality of scintillator units 100, and the grooves IND are opened at the back side; the first scintillator subunit SCU1 of the scintillator unit 100 is located in the corresponding groove IND. That is, the scintillator material corresponding to the first scintillator subunit SCU1 is filled into the corresponding groove to form a scintillator material layer.

[0086] Exemplarily, the first scintillator subunit SCU1 is a gadolinium oxysulfide subunit. The gadolinium oxysulfide in the gadolinium oxysulfide scintillator is a granular material; after converting the X-ray into visible light, the visible light will scatter in multiple directions, so that part of the formed visible light cannot be transmitted along the preset light-emitting direction, affecting the resolution of the final imaging. By setting a groove IND on the reflective layer REL and setting the gadolinium oxysulfide subunit in the groove IND, the emission range of the visible light is limited to a certain range through the groove IND, so that more visible light can be transmitted along the preset light-emitting direction, reducing the light dispersion generated by the visible light converted from the gadolinium oxysulfide scintillator, and improving the luminous intensity of the scintillator layer 10 and the resolution of the final imaging.

[0087] In this embodiment, the substrate layer is a reflective layer REL; the reflective layer REL has a back side facing the detection substrate 20 and a front side facing away from the detection substrate 20. The method for preparing the scintillator layer 10 also includes: providing a reflective layer REL, forming a plurality of grooves IND on the back side of the reflective layer REL, the plurality of grooves IND corresponding to the plurality of scintillator units 100 one by one; the grooves IND open at the back side. The sequentially forming at least two scintillator sublayers on the substrate layer includes: forming a first scintillator sublayer, the first scintillator sublayer including the first scintillator subunit SCU1 of each scintillator unit 100, the first scintillator subunit SCU1 of each scintillator unit 100 being located in the corresponding groove IND; forming a second scintillator sublayer, the second scintillator sublayer including the second scintillator subunit SCU2 of each scintillator unit.

[0088] Exemplarily, the first scintillator subunit SCU1 is a gadolinium oxysulfide subunit, and the second scintillator subunit SCU2 is a cesium iodide subunit. Forming the first scintillator sublayer includes: mixing gadolinium oxysulfide particles with an organic matrix to form a gadolinium oxysulfide precursor; filling the gadolinium oxysulfide precursor into the groove IND, and forming the gadolinium oxysulfide subunit after solidification. For example, the gadolinium oxysulfide precursor is filled into the groove IND by inkjet printing; the organic matrix in the gadolinium oxysulfide precursor is solidified to form the gadolinium oxysulfide subunit. Exemplarily, the gadolinium oxysulfide particles can be praseodymium-doped gadolinium oxysulfide; the organic matrix can be a resin.

[0089] In one embodiment of the present disclosure, the reflective layer REL is a non-transparent substrate capable of reflecting visible light. A groove IND is provided on the non-transparent reflective layer REL that reflects visible light. Part of the visible light generated by the first scintillator subunit SCU1 in the groove IND will be transmitted to the inner wall of the groove IND due to light scattering. The non-transparent reflective layer REL can prevent the visible light that has light scattering from passing through the reflective layer REL to affect the visible light intensity in the adjacent groove IND, thereby avoiding the crosstalk of visible light transmission between adjacent grooves IND and improving the accuracy of imaging. The reflective layer REL can reflect visible light, which can make the light emitted by the first scintillator subunit SCU1 be transmitted in the groove IND by means of reflection. On the one hand, the reduction in light intensity caused by the absorption of light by the reflective layer REL is reduced, and the loss of visible light generated by the first scintillator subunit SCU1 is reduced; on the other hand, the visible light is converged and emitted from the notch of the groove IND, so that the light generated by the first scintillator subunit SCU1 can be converged to the corresponding detection unit 200; this improves the light output intensity of the scintillator layer 10.

[0090] In an example, the reflective layer REL may be a metal substrate, for example, an aluminum plate, and the aluminum plate is a high-purity aluminum plate.

[0091] In another example, the reflective layer REL is an organic material, and reflective particles can be added to the organic material to prepare an organic reflective layer that has the property of reflecting visible light and is opaque. For example, the reflective layer REL can be formed by adding titanium dioxide to a melted resin and stirring evenly, and then curing. The resin can be, but is not limited to, polyethylene terephthalate (PET) or polyimide (PI). In this way, the reflective layer REL is an organic reflective layer dispersed with reflective particles. Furthermore, the reflective layer REL is a flexible reflective layer.

[0092] In another example, the reflective layer REL may include a main substrate and a coating material layer. The material of the main substrate may be a light-transmitting organic material. An array of grooves IND may be prepared on the main substrate by an etching method, and the opening of the groove IND is located on the back of the reflective layer REL. Then a coating material layer is formed on the bottom and sidewalls of the groove IND, for example, a metal layer is deposited. In this way, the metal layer deposited in the groove IND has high reflectivity and does not transmit visible light, thereby avoiding crosstalk between adjacent scintillator units 100 caused by visible light scattering. At the same time, the reflective layer REL can also have a certain degree of flexibility. Exemplarily, the organic material may be a resin material; and the coating material may be metal aluminum or metal silver.

[0093] In one embodiment of the present disclosure, the reflective layer REL may be etched by plasma etching technology to form the recess IND. Of course, depending on the material of the reflective layer REL, other feasible methods may also be used to form the recess IND.

[0094] In one embodiment of the present disclosure, the orthographic projection of the groove IND on the reflective layer REL may be a square, a circle, a regular polygon, etc. Of course, the groove IND may also be set to other shapes as required.

[0095] In one embodiment of the present disclosure, the aspect ratio of the groove IND is between 5 and 10. It is understood that the larger the aspect ratio of the groove IND is, the better the constraint on the emission direction of the visible light is, so that the visible light can be transmitted along a preset direction, thereby improving the resolution of the scintillator panel. Figure 5As shown, the reflective layer REL has an array of grooves IND, and the depth dimension of the groove IND is Z, where Z is the distance from the groove opening to the deepest part of the groove bottom. The width dimension of the groove IND is X, Z:X=(5-10):1. Within this range, while ensuring the emission direction of visible light in the groove IND, it is possible to avoid the increase in thickness of the reflective layer REL and the increase in processing difficulty caused by the excessive depth of the groove IND. It can be understood that the increase in the overall thickness of the scintillator panel is not conducive to the miniaturization / lightness of the radiation detection equipment.

[0096] In one example, the orthographic projection of the groove IND on the back plate RP is a rectangle, and the width X of the groove IND is the size of the long side. In another example, the orthographic projection of the groove IND on the back plate RP is a circle, and the width X of the groove IND is the diameter of the circle. In other examples, the orthographic projection of the groove IND on the back plate RP is a regular polygon, and the width X of the groove IND is the diameter of the circle where each vertex of the regular polygon is located.

[0097] In one embodiment of the present disclosure, the second scintillator subunit SCU2 is at least partially located in the groove IND. In other words, the first scintillator subunit SCU1 does not fill up the groove IND, so that there is a certain distance between the top surface of the first scintillator subunit SCU1 and the notch of the groove IND, which can reduce the light dispersion of the visible light converted and generated by the first scintillator subunit SCU1. Since the first scintillator subunit SCU1 does not fill up the groove IND, the part of the groove IND that is not filled by the first scintillator subunit SCU1 is filled by the second scintillator subunit SCU2, so that the second scintillator subunit SCU2 is partially located in the groove IND. It can be understood that if the first scintillator subunit SCU1 is filled to the opening of the groove IND, the visible light formed by the scintillator material at the opening end of the groove IND will be emitted in all directions to form scattered light, thereby interfering with the adjacent detection unit 200.

[0098] In one embodiment of the present disclosure, see Figure 4 The second scintillator subunit SCU2 includes a regular crystal layer RL close to the detection substrate and an irregular crystal layer IRL far from the detection substrate; the irregular crystal layer IRL is at least partially located in the groove IND.

[0099] In one example, the second scintillator subunit SCU2 is a cesium iodide subunit. When the cesium iodide subunit is prepared by vacuum thermal evaporation or electron beam evaporation, the initial stage of evaporation is cesium iodide broken crystals, and the irregular crystal layer IRL formed by the cesium iodide broken crystals, and then the columnar regular crystal layer RL begins to form. The extension direction of the cesium iodide crystal column in the regular crystal layer RL is the visible light emission direction of the scintillator layer 10. In this embodiment, at least part of the irregular crystal layer IRL of cesium iodide is filled in the groove IND, which can limit the visible light converted from the cesium iodide broken crystals to the groove IND, avoid the visible light from being scattered and interfering with the adjacent detection unit 200, and increase the intensity of the visible light transmitted along the emission direction.

[0100] In another example, the irregular crystal layer IRL is located in the groove IND, and at least part of the regular crystal layer is located in the groove IND. That is to say, the irregular crystal layer IRL of the second scintillator subunit SCU2 is completely located in the groove IND, and part of the regular crystal layer is also located in the groove IND. In this way, the visible light converted by the first scintillator subunit SCU1 and the irregular crystal layer IRL can be confined to the groove IND. At the same time, more visible light is transmitted along the regular crystal located in the groove IND, further improving the intensity of the visible light along the exit direction.

[0101] Exemplarily, the orthographic projection of the first scintillator subunit SCU1 on the detection substrate 20 is located within the range of the orthographic projection of the regular crystal layer RL on the detection substrate 20. It can be understood that the first scintillator subunit SCU1 is located in the groove IND, and a portion of the regular crystal layer RL is located in the groove IND, and a portion is located on the surface of the reflective layer close to the detection substrate. Exemplarily, the orthographic projection of the irregular crystal layer on the detection substrate can coincide with the orthographic projection of the regular crystal layer on the detection substrate. The irregular crystal layer and the regular crystal layer are different forms of the second scintillator subunit SCU2 at different growth stages.

[0102] In one embodiment of the present disclosure, the groove IND includes a first space IND1 and a second space IND2, and the second space IND2 is located on a side of the first space IND1 close to the opening of the groove IND. The first space IND1 of the groove IND is filled with the first scintillator subunit SCU1; the second space IND2 is filled with at least part of the irregular crystal layer. In this way, the visible light converted by the irregular crystal layer IRL of the second scintillator subunit SCU2 is confined in the groove, thereby avoiding the scattering loss of the visible light.

[0103] In this embodiment, the method for preparing the radiation detection panel is as follows: forming the first scintillator sublayer includes forming a corresponding first scintillator subunit SCU1 in the first space IND1 of each of the grooves IND. Forming the second scintillator sublayer includes forming the second scintillator sublayer covering the first scintillator sublayer, so that the irregular crystal layer of the second scintillator subunit SCU2 is at least partially located in the second space of the groove IND. In this way, the first scintillator subunit SCU1 is formed in the first space, and the irregular crystal layer IRL is formed in the second space.

[0104] In another embodiment of the present disclosure, the irregular crystal layer IRL of the second scintillator subunit SCU2 is located in the groove IND, and at least part of the regular crystal layer is located in the groove IND. That is to say, the scintillator parts (the irregular crystal layers IRL of the first scintillator subunit SCU1 and the second scintillator subunit SCU2) that are prone to light scattering are confined in the groove, and the visible light is emitted in the emission direction through the action of the groove IND, thereby avoiding the loss of visible light due to scattering.

[0105] In this embodiment, the method for preparing the radiation detection panel is as follows: the forming of the first scintillator sublayer includes forming a corresponding first scintillator subunit SCU1 in the first space IND1 of each of the grooves IND. The forming of the second scintillator sublayer includes forming the second scintillator sublayer covering the first scintillator sublayer, so that the irregular crystal layer IRL of the second scintillator subunit SCU2 is located in the second space IND2 of the groove IND, and the regular crystal layer RL of the second scintillator subunit is at least partially located in the second space IND2. In this way, the first scintillator subunit SCU1 is formed in the first space, and the irregular crystal layer IRL and a part of the regular crystal layer RL are formed in the second space.

[0106] Exemplarily, the first scintillator subunit SCU1 is a gadolinium oxysulfide subunit, and the second scintillator subunit SCU2 is a cesium iodide subunit. The irregular crystal layer IRL of the cesium iodide subunit completely fills the second space IND2 of the groove IND, and the regular crystal layer RL of the cesium iodide subunit can be partially filled in the groove IND, or can be completely located outside the groove IND. It can be understood that the visible light formed by the gadolinium oxysulfide subunit and the visible light formed by the irregular crystal layer IRL of the cesium iodide subunit can be transmitted along the regular crystal layer RL, and the regular crystal layer RL of the cesium iodide subunit can reduce the scattering of visible light and achieve efficient transmission of visible light. In this way, the visible light generated by the irregular crystal layer IRL of the cesium iodide subunit is confined in the groove IND and transmitted along the exit direction; at the same time, the visible light emitted from the groove IND can be effectively transmitted along the regular crystal layer RL of the cesium iodide subunit, further avoiding the loss of visible light.

[0107] In one example, the depth of the second space IND2 is between 100 and 200 micrometers. Thus, within this depth range, the irregular crystal layer IRL of the second scintillator subunit SCU2 can be completely located in the groove IND, so that visible light can be transmitted along the emission direction, thereby improving the resolution of the light intensity of the scintillator panel.

[0108] In one embodiment of the present disclosure, see Figure 6 and Figure 7 , a transparent protective layer TRL is provided on the side of the scintillator layer 10 away from the reflective layer REL, and the transparent protective layer TRL at least completely covers the scintillator layer 10. The orthographic projection of each scintillator unit 100 on the reflective layer REL is within the orthographic projection range of the transparent protective layer TRL on the reflective layer REL. That is, the transparent protective layer TRL at least completely covers the scintillator material of the scintillator unit. For example, Figure 6 As shown, the side surface of the reflective layer REL or the front surface of the reflective layer REL may also be covered by the transparent protection layer TRL.

[0109] Optionally, the thickness of the transparent protection layer TRL may be 1-50 μm.

[0110] Optionally, the visible light transmittance of the transparent protective layer TRL is greater than 90% to reduce the loss during the transmission of visible light. Exemplarily, the material of the transparent protective layer TRL is an organic material, such as parylene or polyurea.

[0111] In one embodiment of the present disclosure, the method for preparing the scintillator layer 10 further includes: forming a transparent protective layer TRL that at least covers the scintillator layer 10. Exemplarily, parylene or polyurea can be used to form a waterproof film on the side of the second scintillator subunit SCU2 away from the reflective layer REL by spraying, etc., as the transparent protective layer TRL to protect the scintillator unit 100. In addition to having a water-blocking effect, the transparent protective layer TRL also has a certain buffering effect on temperature cycles, which can greatly improve the temperature shock reliability of the scintillator panel.

[0112] In one embodiment of the present disclosure, taking the preparation of two layers of scintillator subunits SCU as an example, see Figure 8 In the above-mentioned radiation detection panel, the preparation method of the scintillator layer 10 comprises the following steps:

[0113] S100, providing a reflective layer REL; the reflective layer REL has a back surface facing the detection substrate 20 and a front surface facing away from the detection substrate 20. A plurality of grooves IND arranged in an array are formed on the back surface of the reflective layer REL.

[0114] S200 , forming a first scintillator sub-layer: forming each first scintillator sub-unit SCU1 in each groove IND, the first scintillator sub-layer including each first scintillator sub-unit SCU1 .

[0115] S300, forming a second scintillator sublayer: forming a second scintillator subunit SCU2 covering the first scintillator sublayer on a side of the first scintillator sublayer close to the detection substrate 20, wherein the second scintillator sublayer includes the second scintillator subunit SCU2. Thus, a scintillator unit 100 corresponding to the groove IND is obtained through steps S200 and S300.

[0116] S400 , forming a transparent protection layer TRL at least covering the second scintillator sublayer on a side of the second scintillator sublayer close to the detection substrate 20 .

[0117] In one example, the first scintillator subunit SCU1 is a gadolinium oxysulfide subunit. In step S200, forming the first scintillator sublayer is forming a gadolinium oxysulfide layer. It includes: mixing gadolinium oxysulfide particles with an organic matrix to form a gadolinium oxysulfide precursor to prepare a gadolinium oxysulfide layer. In this way, the gadolinium oxysulfide layer includes an organic matrix and gadolinium oxysulfide particles dispersed in the organic matrix. Exemplarily, the gadolinium oxysulfide can be doped gadolinium oxysulfide, for example, praseodymium-doped gadolinium oxysulfide.

[0118] For example, praseodymium-doped gadolinium oxysulfide (GOS:Pr 3+ ) powder is mixed with resin to obtain a gadolinium oxysulfide precursor; the gadolinium oxysulfide precursor is then used to form a gadolinium oxysulfide precursor layer by inkjet printing, and the gadolinium oxysulfide precursor layer is cured to form a gadolinium oxysulfide layer.

[0119] In one example, the second scintillator subunit SCU2 is a cesium iodide subunit. In step S300, forming the second scintillator sublayer is forming a cesium iodide layer; the cesium iodide layer includes an irregular crystal layer IRL and a regular crystal layer RL. Exemplarily, an irregular crystal layer IRL and a regular crystal layer RL can be formed on the side of the gadolinium oxysulfide layer close to the detection substrate, and at least part of the irregular crystal layer IRL is located in the groove IND. In another example, an irregular crystal layer IRL and a regular crystal layer RL can also be formed on the side of the gadolinium oxysulfide layer close to the detection substrate, the irregular crystal layer IRL is completely located in the groove IND, and at least part of the regular crystal layer RL is located in the groove IND.

[0120] Optionally, the cesium iodide layer may be prepared by vacuum thermal evaporation or electron beam evaporation.

[0121] Optionally, the cesium iodide in the cesium iodide layer may be doped cesium iodide, for example, including but not limited to thallium-doped cesium iodide (CsI:Tl), sodium-doped cesium iodide (CsI:Na) or other doped columnar cesium iodide crystals.

[0122] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

Claims

1. A radiation detection panel, characterized in that: It includes a detection substrate, and a scintillator layer located on one side of the detection substrate; The detection substrate has detection units arranged in an array; the scintillator layer has scintillator units arranged in an array, and the scintillator units are arranged corresponding to one or more detection units; The scintillator unit comprises at least two stacked scintillator subunits; In any two adjacent layers of scintillator subunits, the luminous efficiency of the scintillator subunit close to the detection substrate is greater than the luminous efficiency of the scintillator subunit far from the detection substrate, and the tolerance of the scintillator subunit close to the detection substrate is less than the tolerance of the scintillator subunit to radiation far from the detection substrate.

2. The radiation detection panel according to claim 1, characterized in that: The scintillator unit at least includes a second scintillator subunit close to the detection substrate and a first scintillator subunit farthest from the detection substrate.

3. The radiation detection panel according to claim 2, characterized in that: Also includes a reflective layer, the reflective layer having a back surface facing the detection substrate and a front surface facing away from the detection substrate; The reflective layer is provided with a plurality of grooves corresponding to the scintillator units one by one, and the grooves are opened at the back surface; The first scintillator subunit is located in the corresponding groove.

4. The radiation detection panel according to claim 3, characterized in that: The depth-to-width ratio of the groove is between 5 and 10.

5. The radiation detection panel according to claim 3, characterized in that: At least a portion of the second scintillator subunit is located within the groove.

6. The radiation detection panel according to claim 3, characterized in that: The second scintillator subunit includes a regular crystal layer close to the detection substrate and an irregular crystal layer away from the detection substrate; The irregular crystal layer is at least partially located in the groove.

7. The radiation detection panel according to claim 3, characterized in that: The second scintillator subunit includes a regular crystal layer close to the detection substrate and an irregular crystal layer away from the detection substrate; The irregular crystal layer is located in the groove, and at least a portion of the regular crystal layer is located in the groove.

8. The radiation detection panel according to claim 6 or 7, characterized in that: The orthographic projection of the first scintillator subunit on the detection substrate is located within the range of the orthographic projection of the regular crystal layer on the detection substrate.

9. The radiation detection panel according to claim 3, characterized in that: The groove comprises a first space and a second space, wherein the second space is located on a side of the first space close to the opening of the groove; The first space of the groove is filled with the first scintillator sub-unit; the second space is filled with the second scintillator sub-unit; The depth of the second space is between 100 and 200 microns.

10. The radiation detection panel according to claim 1, characterized in that: It also includes a transparent protective layer, which at least covers the scintillator layer.

11. The radiation detection panel according to claim 2, characterized in that: The first scintillator subunit is a gadolinium oxysulfide subunit, and the second scintillator subunit is a cesium iodide subunit.

12. A radiation detector, characterized in that: A radiation detection panel comprising any one of claims 1-11.

13. A method for preparing a radiation detection panel, characterized in that: The method comprises preparing a scintillator layer located on one side of a detection substrate, wherein the scintillator layer has scintillator units arranged in an array; The preparation of the scintillator layer comprises: At least two scintillator sublayers are formed in sequence on the substrate layer, and each scintillator sublayer contains scintillator subunits corresponding to each scintillator unit; wherein, in any two adjacent layers of scintillator subunits, the luminous efficiency of the scintillator subunits close to the detection substrate side is greater than the luminous efficiency of the scintillator subunits far from the detection substrate side, and the tolerance of the scintillator subunits close to the detection substrate side to radiation is less than the tolerance of the scintillator subunits far from the detection substrate side to radiation.

14. The method for preparing a radiation detection panel according to claim 13, characterized in that: The substrate layer is a reflective layer; the reflective layer has a back surface facing the detection substrate and a front surface facing away from the detection substrate; The preparation method further comprises: A plurality of grooves are formed on the back side of the reflective layer, and the plurality of grooves correspond to the plurality of scintillator units one by one; the grooves open on the back side; The step of sequentially forming at least two scintillator sub-layers on the substrate layer comprises: forming a first scintillator sub-layer, wherein the first scintillator sub-layer comprises a first scintillator sub-unit of each scintillator unit, and the first scintillator sub-unit of each scintillator unit is located in a corresponding groove; A second scintillator sub-layer is formed, the second scintillator sub-layer including second scintillator sub-units of the respective scintillator units.

15. The method for preparing a radiation detection panel according to claim 14, characterized in that: The second scintillator subunit includes an irregular crystal layer and a regular crystal layer; the groove includes a first space and a second space, and the second space is located on a side of the first space close to the groove opening; The forming of the first scintillator sub-layer comprises: forming a corresponding first scintillator subunit in the first space of each of the grooves; Forming the second scintillator sublayer includes: The second scintillator sub-layer covering the first scintillator sub-layer is formed so that the irregular crystal layer of the second scintillator sub-unit is at least partially located in the second space of the groove.

16. The method for preparing a radiation detection panel according to claim 14, characterized in that: The second scintillator subunit includes an irregular crystal layer and a regular crystal layer; the groove includes a first space and a second space, and the second space is located on a side of the first space close to the groove opening; The forming of the first scintillator sub-layer comprises: forming a corresponding first scintillator subunit in the first space of each of the grooves; Forming the second scintillator sublayer includes: The second scintillator sublayer is formed to cover the first scintillator sublayer so that the irregular crystal layer of the second scintillator subunit is located in the second space of the groove and the regular crystal layer of the second scintillator subunit is at least partially located in the second space.

17. The method for preparing a radiation detection panel according to any one of claims 13 to 16, characterized in that: The preparation method further comprises: A transparent protective layer is formed to cover at least the scintillator layer.

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