Hole transport layer precursor solution, hole transport layer, perovskite solar cell and photovoltaic module

Abstract

The embodiment of the invention provides a hole transport layer precursor solution, a hole transport layer, a perovskite solar cell and a photovoltaic module, and relates to the technical field of perovskite solar cells. The hole transport layer precursor solution comprises an SAM material, an ampholytic surfactant, an anionic surfactant and an organic solvent; the SAM material comprises one or more of monomolecular self-assembly materials containing phosphate groups. The anionic surfactant and the ampholytic surfactant are introduced into the precursor solution of the hole transport layer, so that the storage stability and the deposition stability of the precursor solution of the hole transport layer are improved, the uniformity of the prepared hole transport layer is improved, and the film forming quality of the hole transport layer is optimized; the preparation of the large-area perovskite solar cell is facilitated, and the open-circuit voltage, the filling factor and the photoelectric conversion efficiency of the prepared perovskite solar cell can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of perovskite solar cells, and in particular to a hole transport layer precursor solution, a hole transport layer, a perovskite solar cell and a photovoltaic module. Background Art

[0002] Perovskite materials originally referred to a mineral composed of inorganic calcium titanate (CaTiO3), and later used to refer to a family of compounds with an ABX3 structure. Perovskite materials can be used to prepare perovskite solar cells (PSCs). Perovskite solar cells have broad application prospects due to their low-temperature solution processability and excellent optoelectronic properties. Self-assembled monolayers (SAMs) have the advantages of easily adjustable perovskite energy level arrangement, minimized parasitic absorption, sufficient stability and easy processing, which are compatible with low-cost and scalable production. Self-assembled monolayers (SAMs) as hole selection layers (HSLs) can significantly reduce charge transport losses, thereby improving short-circuit current density (JSC) and open-circuit voltage (VOC) in perovskite solar cells and achieving high power conversion efficiency.

[0003] However, when a self-assembled monolayer (SAM) is used as a hole-selective layer (HSL), factors such as solvent volatilization and deposition rate will affect the uniformity of the self-assembled monolayer (SAM), which is not conducive to the preparation of large-area perovskite solar cells and significantly reduces the photoelectric conversion efficiency of perovskite solar cells.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the invention

[0005] The embodiments of the present application provide a hole transport layer precursor solution, a hole transport layer, a perovskite solar cell and a photovoltaic module that can optimize the film-forming quality of the hole transport layer, so as to solve or alleviate the technical problems raised above.

[0006] To achieve the above purpose, this application adopts the following technical solutions: A hole transport layer precursor solution, comprising: a SAM material, an amphoteric surfactant, an anionic surfactant, and an organic solvent; The SAM material includes: one or more single-molecule self-assembly materials containing phosphoric acid groups.

[0007] In some embodiments, the amphoteric surfactant includes one or more of dodecyl dimethyl betaine, lecithin, 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, sodium lauroyl aspartate, sodium lauroyl alanine, and sulfobetaine; And / or, the anionic surfactant includes one or more of sodium dodecyl sulfonate, sodium dodecylbenzene sulfonate, sodium sulfosuccinate monoester, sodium dioctyl sulfosuccinate, and sodium alkyl phosphate.

[0008] In some embodiments, the concentration ratio of the amphoteric surfactant to the anionic surfactant is 1:100 to 100:1.

[0009] In some embodiments, the concentration of the amphoteric surfactant is 0.01 to 1.00 mg / ml; The concentration of the anionic surfactant is 0.01-1.00 mg / ml.

[0010] In some embodiments, the concentration of the SAM material is 0.1-2.0 mg / ml.

[0011] In some embodiments, the SAM material includes: one or more of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid.

[0012] In some embodiments, the organic solvent includes one or more of ethanol, isopropanol, N-methylpyrrolidone, 2-mercaptoethanol, dimethyl sulfoxide, and diphenyl sulfoxide.

[0013] The embodiment of the present application further provides a hole transport layer, wherein the hole transport layer is formed by the hole transport layer precursor solution as described above.

[0014] The embodiment of the present application also provides a perovskite solar cell, including: a regular structure perovskite solar cell or a reverse structure perovskite solar cell; The formal structure perovskite solar cell comprises: a conductive substrate, an electron transport layer, a perovskite light absorption layer, and a hole transport layer formed by the hole transport layer precursor solution as described above, which are stacked in sequence; The inverted structure perovskite solar cell comprises: a conductive substrate, a hole transport layer formed by the hole transport layer precursor solution as described above, a perovskite light absorption layer, and an electron transport layer which are stacked in sequence.

[0015] An embodiment of the present application also provides a photovoltaic cell assembly, including the above-mentioned perovskite solar cell.

[0016] The above technical solution adopted in the embodiment of the present application may have the following advantages: The introduction of anionic surfactants and amphoteric surfactants into the hole transport layer precursor solution is beneficial to improving the storage stability and deposition stability of the hole transport layer precursor solution, improving the uniformity of the prepared hole transport layer, optimizing the film-forming quality of the hole transport layer, facilitating the preparation of large-area perovskite solar cells, and being able to improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0018] Figure 1 It is a schematic diagram of the structure of a perovskite solar cell provided in an embodiment of the present application.

[0019] Description of reference numerals: 1. Conductive substrate; 2. Hole transport layer; 3. Perovskite light absorption layer; 4. Electron transport layer; 5. Hole blocking layer; 6. Metal electrode. DETAILED DESCRIPTION

[0020] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0021] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not mean that the present disclosure necessarily has the first element, component, region, layer or part.

[0022] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0023] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0024] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0025] The present application aims to provide a hole transport layer precursor solution, a hole transport layer, a perovskite solar cell and a photovoltaic module. The introduction of anionic surfactants and amphoteric surfactants into the hole transport layer precursor solution is beneficial to improving the storage stability and deposition stability of the hole transport layer precursor solution, improving the uniformity of the prepared hole transport layer, optimizing the film-forming quality of the hole transport layer, facilitating the preparation of large-area perovskite solar cells, and being able to improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cell.‌

[0026] Below, exemplary embodiments of the present application will be described in more detail with reference to the accompanying drawings. It should be noted that these exemplary embodiments can be implemented in many different forms and should not be construed as being limited to the embodiments described herein.

[0027] The embodiment of the present application provides a hole transport layer precursor solution, including: SAM material, amphoteric surfactant, anionic surfactant, and organic solvent; The SAM material includes: one or more single-molecule self-assembly materials containing phosphoric acid groups.

[0028] In an embodiment of the present application, the SAM material may include: one or more of MeO-2PACZ ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), 2PACZ ([2-(9H-carbazole-9-yl)ethyl]phosphonic acid), and Me-4PACZ ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid). When the hole transport layer is prepared using a hole transport layer precursor solution, the preparation method may include one or more of a slit coating method, a spin coating method, and a blade coating method. The thickness of the hole transport layer may be 1-100nm (for example, 1nm, 5nm, 10nm, 15nm, 20nm, 40nm, 60nm, 80nm, 100nm). Amphoteric surfactants are surfactants that contain both anionic hydrophilic groups and cationic hydrophilic groups in the same molecule. Anionic surfactants are surfactants that can generate hydrophobic anions in water. The organic solvent may include one or more of ethanol, isopropanol, N-methylpyrrolidone (NMP), 2-mercaptoethanol (2-ME), dimethyl sulfoxide (DMSO), and diphenyl sulfoxide (DPSO).

[0029] In the embodiments of the present application, anionic surfactants and amphoteric surfactants are introduced into the hole transport layer precursor solution, which is beneficial to improving the storage stability and deposition stability of the hole transport layer precursor solution, improving the uniformity of the prepared hole transport layer, optimizing the film formation quality of the hole transport layer, facilitating the preparation of large-area perovskite solar cells, and being able to improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0030] In some embodiments, the amphoteric surfactant includes one or more of dodecyl dimethyl betaine, lecithin, 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, sodium lauroyl aspartate, sodium lauroyl alanine, and sulfobetaine; And / or, the anionic surfactant includes one or more of sodium dodecyl sulfonate, sodium dodecylbenzene sulfonate, sodium sulfosuccinate monoester, sodium dioctyl sulfosuccinate, and sodium alkyl phosphate.

[0031] In the embodiments of the present application, the types of anionic surfactants and amphoteric surfactants are optimized, which can further improve the storage stability and deposition stability of the hole transport layer precursor solution, improve the uniformity of the prepared hole transport layer, optimize the film-forming quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0032] In some embodiments, the concentration ratio of the amphoteric surfactant to the anionic surfactant is 1: 100 to 100: 1. Preferably, when the concentration ratio of the amphoteric surfactant to the anionic surfactant is 1: 2 to 1: 1, the storage stability and deposition stability of the hole transport layer precursor solution can be further improved, the uniformity of the prepared hole transport layer can be improved, and the film quality of the hole transport layer can be optimized.

[0033] In the embodiments of the present application, optimizing the ratio of anionic surfactants and amphoteric surfactants can further improve the storage stability and deposition stability of the hole transport layer precursor solution, improve the uniformity of the prepared hole transport layer, optimize the film-forming quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0034] In some embodiments, the concentration of the amphoteric surfactant is 0.01 to 1.00 mg / ml; The concentration of the anionic surfactant is 0.01-1.00 mg / ml.

[0035] In the embodiments of the present application, the concentrations of anionic surfactants and amphoteric surfactants are optimized, which can further improve the storage stability and deposition stability of the hole transport layer precursor solution, improve the uniformity of the prepared hole transport layer, optimize the film-forming quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0036] In some embodiments, the concentration of the SAM material is 0.1-2.0 mg / ml. Preferably, the concentration of the SAM material is 0.8-1.5 mg / ml, which can further improve the uniformity of the prepared hole transport layer, optimize the film quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0037] In the embodiments of the present application, the concentration of the SAM material is optimized, the uniformity of the prepared hole transport layer can be improved, the film quality of the hole transport layer can be optimized, and it is beneficial to the preparation of large-area perovskite solar cells, and the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells can be improved.

[0038] In some embodiments, the SAM material includes one or more of: MeO-2PACZ ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), 2PACZ ([2-(9H-carbazole-9-yl)ethyl]phosphonic acid), and Me-4PACZ ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid).

[0039] In the embodiments of the present application, the type of SAM material is optimized, the uniformity of the prepared hole transport layer can be improved, the film quality of the hole transport layer can be optimized, which is beneficial to the preparation of large-area perovskite solar cells and can improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0040] In some embodiments, the organic solvent includes one or more of ethanol, isopropanol, N-methylpyrrolidone, 2-mercaptoethanol, dimethyl sulfoxide, and diphenyl sulfoxide.

[0041] In the embodiments of the present application, optimizing the type of organic solvent can further improve the storage stability and deposition stability of the hole transport layer precursor solution, improve the uniformity of the prepared hole transport layer, optimize the film-forming quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0042] The embodiment of the present application further provides a hole transport layer, wherein the hole transport layer is formed by the hole transport layer precursor solution as described above.

[0043] In the embodiment of the present application, the hole transport layer also has the advantages possessed by the above hole transport layer precursor solution. The hole transport layer is formed by the above hole transport layer precursor solution, and the formed hole transport layer has high film uniformity and good film quality, which is conducive to the preparation of large-area perovskite solar cells and can improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0044] The embodiment of the present application also provides a perovskite solar cell, including: a regular structure perovskite solar cell or a reverse structure perovskite solar cell; The formal structure perovskite solar cell comprises: a conductive substrate, an electron transport layer, a perovskite light absorption layer, and a hole transport layer formed by the hole transport layer precursor solution as described above, which are stacked in sequence; The inverted structure perovskite solar cell comprises: a conductive substrate, a hole transport layer formed by the hole transport layer precursor solution as described above, a perovskite light absorption layer, and an electron transport layer which are stacked in sequence.

[0045] In an embodiment of the present application, the conductive substrate may be any one of ITO (indium tin oxide) transparent conductive glass, FTO (fluorine-doped tin oxide) transparent conductive glass and IZO (indium zinc oxide) transparent conductive glass; the material of the electron transport layer may include but is not limited to one or more of TiO2, SnO2, ZnO, and the thickness of the electron transport layer may be 20-500nm (for example, 20nm, 40nm, 60nm, 80nm, 100nm, 200nm, 300nm, 400nm, 500nm); the perovskite material in the perovskite light absorption layer is an ABX3 structure; A is a monovalent cation; B is a divalent cation; and X is a monovalent anion. More specifically, A includes but is not limited to a mixture of one or more monovalent cations selected from cesium (Cs), rubidium (Rb), methylamine (CH3NH3), and methylamidine (CH2(NH2)2); B includes but is not limited to a mixture of one or more divalent cations selected from lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); X includes but is not limited to a mixture of one or more monovalent anions selected from iodine (I), bromine (Br), chlorine (Cl), fluorine (F), and thiocyanate ion (SCN). The thickness of the perovskite light absorbing layer may be 300-800 nm (e.g., 300 nm, 500 nm, 800 nm).

[0046] In the embodiment of the present application, the advantages possessed by the above hole transport layer precursor solution are also possessed by the perovskite solar cell. The hole transport layer is formed by the above hole transport layer precursor solution, and the formed hole transport layer has high film uniformity and good film quality, which is conducive to the preparation of large-area perovskite solar cells and can improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cell.

[0047] The following specific examples further illustrate the present application, but should not be construed as limiting the present application. Without departing from the spirit and substance of the present application, modifications or replacements made to the methods, steps or conditions of the present application are within the scope of the present application.

[0048] Example 1 A perovskite solar cell, such as Figure 1 As shown, it includes: a conductive substrate 1, a hole transport layer 2, a perovskite light absorbing layer 3, an electron transport layer 4, a hole blocking layer 5, and a metal electrode 6 which are stacked in sequence.

[0049] The specific preparation process of perovskite solar cells is as follows: Step 100: Pretreatment of the conductive substrate 1: Using ITO (indium tin oxide transparent conductive glass) glass as the conductive substrate 1, placing the conductive substrate 1 in an ultrasonic cleaning instrument, and ultrasonically cleaning the conductive substrate 1 with deionized water, isopropyl alcohol, and ethanol in sequence, with each cleaning step lasting 30 minutes, and using a nitrogen (N2) air gun to blow dry the conductive substrate 1 to obtain a cleaned conductive substrate 1; Step 101: dissolving 1.0 mg of 2PACz, 0.05 mg of dodecyl dimethyl betaine and 0.05 mg of sodium dodecyl sulfate in 1 mL of ethanol, and shaking thoroughly to dissolve, to obtain a hole transport layer precursor solution; Step 102: Deposit 30 nm of NiO on the cleaned conductive substrate 1 by plasma deposition. x layer; by scraping, the hole transport layer precursor solution is applied to the NiO x layer, annealed at 100℃ for 5min to form a SAM layer with a thickness of 5nm, and then stacked NiO x layer and SAM layer constitute the hole transport layer 2 (NiO x layer + SAM layer); Step 103: 1 mol of Cs 0.15 FA 0.85 PbI3 powder was dissolved in 25 ml of a mixed solvent with a volume ratio of DMF:DMSO=4:1, and stirred at room temperature until it was completely dissolved to obtain a perovskite precursor solution; the perovskite precursor solution was spin-coated on the hole transport layer 2 by a doctor blade coating method, and annealed at 100°C for 15 minutes to form a perovskite light absorption layer 3 with a thickness of 500 nm; Step 104: Vacuum evaporate a 40 nm thick C film on the perovskite light absorbing layer 3 at a rate of 0.5 Å / s. 60 (fullerene) layer as electron transport layer 4; Step 105: vacuum evaporating a BCP (Bathocuproine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) layer with a thickness of 8 nm on the electron transport layer 4 at a rate of 0.5 Å / s as the hole blocking layer 5; Step 106 : vacuum-evaporating a 100 nm thick copper electrode on the hole blocking layer 5 as the metal electrode 6 .

[0050] Example 2 The perovskite solar cell of Example 2 was prepared by referring to the preparation method of Example 1, except that step 101 of Example 2 was as follows: 1.5 mg of MeO-2PACz, 0.03 mg of lecithin and 0.05 mg of sodium dodecylbenzene sulfonate were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution; Step 102 of Example 2 is: coating the hole transport layer precursor solution onto the cleaned conductive substrate 1 by slit coating, annealing at 100° C. for 5 min, and forming a SAM layer with a thickness of 10 nm as the hole transport layer 2 (SAM layer).

[0051] Example 3 The perovskite solar cell of Example 3 was prepared by referring to the preparation method of Example 1, except that, in step 101 of Example 3, 0.8 mg of Me-4PACz, 0.01 mg of sulfobetaine and 0.02 mg of sodium sulfosuccinate were dissolved in 1 mL of isopropanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution. Step 102 of Example 3 is: applying the hole transport layer precursor solution onto the cleaned conductive substrate 1 by scraping, annealing at 100° C. for 5 min, and forming a SAM layer with a thickness of 7 nm as the hole transport layer 2 (SAM layer).

[0052] Example 4 The perovskite solar cell of Example 4 was prepared by referring to the preparation method of Example 1, except that step 101 of Example 4 was as follows: 1.0 mg of 2PACz, 0.01 mg of dodecyl dimethyl betaine and 1.0 mg of sodium dodecyl sulfate were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution.

[0053] Example 5 The perovskite solar cell of Example 5 was prepared by referring to the preparation method of Example 1, except that step 101 of Example 5 was as follows: 1.0 mg of 2PACz, 1.0 mg of dodecyl dimethyl betaine and 0.01 mg of sodium dodecyl sulfate were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution.

[0054] Example 6 The perovskite solar cell of Example 6 was prepared by referring to the preparation method of Example 1, except that step 101 of Example 6 was as follows: 0.1 mg of 2PACz, 0.05 mg of dodecyl dimethyl betaine and 0.05 mg of sodium dodecyl sulfate were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution.

[0055] Example 7 The perovskite solar cell of Example 7 was prepared by referring to the preparation method of Example 1, except that step 101 of Example 7 was as follows: 2.0 mg of 2PACz, 0.05 mg of dodecyl dimethyl betaine and 0.05 mg of sodium dodecyl sulfate were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution.

[0056] Comparative Example 1 The perovskite solar cell of Comparative Example 1 was prepared by referring to the preparation method of Example 1, except that step 101 of Comparative Example 1 was as follows: 1.0 mg of 2PACz was dissolved in 1 mL of ethanol, and the solution was fully shaken to obtain a hole transport layer precursor solution.

[0057] Comparative Example 2 The perovskite solar cell of Comparative Example 2 was prepared by referring to the preparation method of Example 1, except that step 101 of Comparative Example 2 was: dissolving 1.0 mg of 2PACz and 0.05 mg of sodium dodecyl sulfate in 1 mL of ethanol, and shaking the mixture to dissolve the mixture, to obtain a hole transport layer precursor solution.

[0058] Comparative Example 3 The perovskite solar cell of Comparative Example 3 was prepared by referring to the preparation method of Example 1, except that step 101 of Comparative Example 3 was as follows: 1.0 mg of 2PACz and 0.05 mg of dodecyl dimethyl betaine were dissolved in 1 mL of ethanol, and the mixture was fully shaken to dissolve, thereby obtaining a hole transport layer precursor solution.

[0059] The following is a performance test of the perovskite solar cells provided in Examples 1-7 and Comparative Examples 1-3 of the present application. The test results are shown in Table 1.

[0060] Table 1 Performance test results of perovskite solar cells of Examples 1-7 and Comparative Examples 1-3

[0061] Referring to the battery performance test results of Examples 1-7 and Comparative Examples 1-3, it can be seen that the introduction of anionic surfactants and amphoteric surfactants into the hole transport layer precursor solution is beneficial to improving the storage stability and deposition stability of the hole transport layer precursor solution, improving the uniformity of the prepared hole transport layer, optimizing the film formation quality of the hole transport layer, facilitating the preparation of large-area perovskite solar cells, and being able to improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells. ‌‌

[0062] Referring to the battery performance test results of Examples 1-3 and Examples 4-5, it can be seen that optimizing the ratio of anionic surfactants and amphoteric surfactants can further improve the storage stability and deposition stability of the hole transport layer precursor solution, improve the uniformity of the prepared hole transport layer, optimize the film formation quality of the hole transport layer, and be beneficial to the preparation of large-area perovskite solar cells, and can improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0063] Referring to the battery performance test results of Examples 1-3 and Examples 6-7, it can be seen that optimizing the concentration of the SAM material can improve the uniformity of the prepared hole transport layer, optimize the film-forming quality of the hole transport layer, facilitate the preparation of large-area perovskite solar cells, and improve the open circuit voltage, fill factor and photoelectric conversion efficiency of the prepared perovskite solar cells.

[0064] The embodiment of the present application can provide a photovoltaic cell assembly, which includes the above-mentioned perovskite solar cell. The photovoltaic cell assembly also has the advantages possessed by the above-mentioned perovskite solar cell.

[0065] It should be noted that the terms "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0066] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0067] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0068] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0069] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A hole transport layer precursor solution, characterized in that: include: SAM materials, amphoteric surfactants, anionic surfactants, organic solvents; The SAM material includes: one or more single-molecule self-assembly materials containing phosphoric acid groups.

2. The hole transport layer precursor solution according to claim 1, characterized in that: The amphoteric surfactant includes one or more of dodecyl dimethyl betaine, lecithin, 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, sodium lauroyl aspartate, sodium lauroyl alanine, and sulfobetaine; And / or, the anionic surfactant includes one or more of sodium dodecyl sulfonate, sodium dodecylbenzene sulfonate, sodium sulfosuccinate monoester, sodium dioctyl sulfosuccinate, and sodium alkyl phosphate.

3. The hole transport layer precursor solution according to claim 1, characterized in that: The concentration ratio of the amphoteric surfactant to the anionic surfactant is 1:100 to 100:

1.

4. The hole transport layer precursor solution according to claim 3, characterized in that: The concentration of the amphoteric surfactant is 0.01-1.00 mg / ml; The concentration of the anionic surfactant is 0.01-1.00 mg / ml.

5. The hole transport layer precursor solution according to claim 1, characterized in that: The concentration of the SAM material is 0.1-2.0 mg / ml.

6. The hole transport layer precursor solution according to claim 1, characterized in that: The SAM material includes one or more of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid.

7. The hole transport layer precursor solution according to claim 1, characterized in that: The organic solvent includes one or more of ethanol, isopropanol, N-methylpyrrolidone, 2-mercaptoethanol, dimethyl sulfoxide, and diphenyl sulfoxide.

8. A hole transport layer, characterized in that: The hole transport layer is formed from the hole transport layer precursor solution according to any one of claims 1 to 7.

9. A perovskite solar cell, characterized in that: include: Formal structure perovskite solar cells or inverted structure perovskite solar cells; The formal structure perovskite solar cell comprises: a conductive substrate, an electron transport layer, a perovskite light absorption layer, and a hole transport layer formed by the hole transport layer precursor solution according to any one of claims 1 to 7, which are stacked in sequence; The inverted structure perovskite solar cell comprises: a conductive substrate stacked in sequence, a hole transport layer formed by the hole transport layer precursor solution according to any one of claims 1 to 7, a perovskite light absorption layer, and an electron transport layer.

10. A photovoltaic cell assembly, characterized in that: Comprising the perovskite solar cell as claimed in claim 9.

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